Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes an encapsulation material that at least partially encapsulates a semiconductor component of the semiconductor device. The semiconductor device further includes a lead protruding from the encapsulation material and extending along a longitudinal axis, the lead including a twisted section along which the lead is twisted about the longitudinal axis. The twisted section of the lead is encapsulated in the encapsulation material, or the twisted section of the lead is located outside the encapsulation material and can provide an increased gap distance between the remaining barrier strip portion of the lead and an adjacent lead.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. In addition, the present disclosure relates to a method for manufacturing a semiconductor device. Background Art

[0002] Conventional semiconductor packages may conform to predefined specifications regarding their size, number of leads, and / or lead dimensions. The predefined specifications may limit the electrical and isolation performance of the device, particularly in terms of creepage and clearance distances between the leads of the device. Manufacturers and developers of semiconductor devices are constantly striving to improve their products. In particular, it may be desirable to provide semiconductor devices with improved electrical and isolation performance. It may also be desirable to provide suitable methods for manufacturing such semiconductor devices. Summary of the invention

[0003] One aspect of the present disclosure relates to a semiconductor device. The semiconductor device includes an encapsulation material that at least partially encapsulates a semiconductor component of the semiconductor device. The semiconductor device also includes a lead that protrudes from the encapsulation material and extends along a longitudinal axis, the lead including a torsion section, and the lead twists around the longitudinal axis along the torsion section. The torsion section of the lead is encapsulated in the encapsulation material, or the torsion section of the lead is located outside the encapsulation material and is capable of providing an increased gap distance between a remaining dambar portion of the lead and an adjacent lead.

[0004] Another aspect of the present disclosure relates to a semiconductor device. The semiconductor device includes an encapsulation material that at least partially encapsulates a semiconductor component of the semiconductor device. The semiconductor device also includes a first lead protruding from the encapsulation material. A portion of the first lead located outside the encapsulation material has a thickness measured in a direction perpendicular to a major surface of the encapsulation material and a width measured in a direction parallel to the major surface of the encapsulation material. The thickness of the portion of the first lead is greater than the width of the portion of the first lead.

[0005] Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device. The method includes an operation of providing a lead extending along a longitudinal axis. The method also includes an operation of twisting a segment of the lead about the longitudinal axis, thereby providing a twisted segment of the lead. The method also includes an operation of at least partially encapsulating a semiconductor component of the semiconductor device in an encapsulation material, wherein the lead at least partially protrudes from the encapsulation material. The twisted segment of the lead is encapsulated in the encapsulation material, or the twisted segment of the lead is located outside the encapsulation material and is capable of providing an increased gap distance between a remaining dam portion of the lead and an adjacent lead.

[0006] Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device. The method includes an operation of at least partially encapsulating a lead and a semiconductor component of the semiconductor device in an encapsulation material. The portion of the lead located outside the encapsulation material has a thickness measured in a direction perpendicular to a major surface of the encapsulation material and a width measured in a direction parallel to the major surface of the encapsulation material. The thickness of the portion of the lead is greater than the width of the portion of the lead. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The accompanying drawings are included to provide a further understanding of the various aspects. The accompanying drawings illustrate the various aspects and, together with the description, serve to explain the principles of the various aspects. Other aspects and many of the expected advantages of the various aspects will be readily appreciated as they become better understood by reference to the detailed description below. The elements of the drawings are not necessarily drawn to scale relative to each other. Like reference numerals may represent corresponding similar parts.

[0008] Figure 1A and Figure 1B A top view and a side view of a semiconductor device 100 according to the present disclosure are schematically shown.

[0009] Figure 2A and Figure 2B A top view and a side view of a semiconductor device 200 are schematically shown.

[0010] Figure 3 A perspective view of a lead having a twisted section that may be included in a semiconductor device according to the present disclosure is schematically shown.

[0011] Figure 4A and Figure 4B A side view of a semiconductor device 400 according to the present disclosure is schematically shown.

[0012] Figure 5A and Figure 5B A side view of a semiconductor device 500 is schematically shown.

[0013] Fig. 6A and Figure 6B A top view and a side view of a semiconductor device 600 are schematically shown.

[0014] Fig. 7A and Figure 7B A top view and a side view of a semiconductor device 700 according to the present disclosure are schematically shown.

[0015] Fig. 8A and Figure 8B A top view and a side view of a semiconductor device 800 according to the present disclosure are schematically shown.

[0016] Fig.9A and Fig. 9B A top view and a side view of a semiconductor device 900 according to the present disclosure are schematically shown.

[0017] FIG. 10A to FIG. 10C A method for manufacturing a semiconductor device 1000 and mounting it on a printed circuit board is schematically shown.

[0018] Fig.11 A side view of a molding tool that may be used in a method for manufacturing a semiconductor device according to the present disclosure is schematically shown.

[0019] Fig.12 A semiconductor device 1200 according to the present disclosure is schematically shown mounted on a printed circuit board.

[0020] Fig.13 A semiconductor device 1300 according to the present disclosure is schematically shown mounted on a printed circuit board.

[0021] Fig.14 A flow chart of a method for manufacturing a semiconductor device according to the present disclosure is shown.

[0022] Fig.15 A flow chart of a method for manufacturing a semiconductor device according to the present disclosure is shown. DETAILED DESCRIPTION

[0023] In the following detailed description, reference is made to the accompanying drawings in which specific aspects of the disclosure may be practiced are illustrated by way of illustration. In this regard, directional terms such as "top," "bottom," "front," "rear," and the like may be used with reference to the orientation of the drawings being described. Because components of the described devices may be positioned in a number of different orientations, the directional terms may be used for illustrative purposes and are in no way limiting. Other aspects may be utilized and structural or logical changes may be made without departing from the concepts of the present disclosure. Therefore, the following detailed description should not be considered limiting, and the concepts of the present disclosure are defined by the appended claims.

[0024] Figure 1A and Figure 1BThe semiconductor device 100 may include a die pad 2, leads (or pins) 4A and 4B, a semiconductor component 6, and an encapsulation material 8 that at least partially encapsulates one or more of these components. Each of the leads 4A and 4B may protrude from the encapsulation material 8 and may extend along a longitudinal axis. In the example shown, the longitudinal axis (and therefore the leads 4A and 4B) may extend along the y-direction. Each of the leads 4A and 4B may include a torsional segment 10A and 10B, respectively, along which the corresponding lead may be twisted around the corresponding longitudinal axis. In the example shown, the torsional segments 10A and 10B may be arranged in the encapsulation material 8. It should be noted that the device components covered by the encapsulation material 8 may not be visible in practice, but are shown for illustrative purposes. Figure 1A Shown in.

[0025] The die pad 2 and the leads 4A, 4B can be part of a lead frame. In the non-limiting example shown, one die pad 2 and two leads 4A, 4B are shown. In other examples, the number of die pads and leads can be different and can depend in particular on the specific type and function of the semiconductor device 100. The die pad 2 and the leads 4A, 4B can be made of metal and / or metal alloy, in particular at least one of copper, copper alloy, nickel, iron nickel, etc. The lead 4A can be mechanically connected to the die pad 2. In this regard, the lead 4A and the die pad 2 can be made of a single metal piece. Alternatively, the lead 4A can be connected to the die pad 2 via a fusion connection. For example, the lead 4A can correspond to a power lead that can be connected to a power electrode of a semiconductor component 6.

[0026] Each of the leads 4A and 4B may include one or more remaining dam portions 12A and 12B, which may be derived from dams that have been used and cut during the manufacturing process of the semiconductor device 100. FIG. 10A to FIG. 10C An exemplary use of a barrier strip in the manufacture of a semiconductor device is shown and described. Figure 2A Another view of the bar portions 12A and 12B from a different perspective or angle can be seen in FIG.

[0027] In the example shown, both leads 4A and 4B can be twisted about a longitudinal axis extending in the y direction. In other examples, only one of leads 4A and 4B can include a twisted section. For illustration purposes, Figure 3 A perspective view of a twisted section 10 of a lead 4 is shown, wherein Figure 1A and Figure 1B Leads 4A and 4B can be twisted in a similar manner. Figure 1A and Figure 1BIn the example shown, leads 4A and 4B may be twisted about the longitudinal axis by an angle of approximately ninety degrees.

[0028] Figure 1A The gap distance d between the leads 4A and 4B is shown. CLR . Gap distance d CLR can be defined as the shortest distance through the air between two conductive elements. In the example shown, the gap distance d CLR It may be substantially constant along the entire length of leads 4A and 4B that are outside of encapsulation material 8 . Figure 1A Also shown is the creepage distance d between the leads 4A and 4B along the surface of the encapsulation material 8. CRP . Creepage distance d CRP It can be defined as the shortest distance between two conductive parts along the surface of a (solid) insulating material.

[0029] In the example shown, the semiconductor device 100 may include a single semiconductor component 6. In other examples, the semiconductor device 100 may include two or even more semiconductor components. The semiconductor component 6 may include or may correspond to a semiconductor chip. Throughout this specification, the terms "chip", "semiconductor chip", "bare die", and "semiconductor bare die" may be used interchangeably. The semiconductor chip may be made of an elemental semiconductor material (e.g., Si) or a wide bandgap semiconductor material or a compound semiconductor material (e.g., SiC, GaN, SiGe, GaAs). The semiconductor chip may be of any type and may include an integrated circuit with active electronic components and / or passive electronic components. The integrated circuit may be designed as a logic integrated circuit, an analog integrated circuit, a mixed signal integrated circuit, a power integrated circuit, a memory circuit, an integrated passive device, etc.

[0030] In particular, the semiconductor chip may correspond to a power semiconductor component and may therefore be referred to as a power semiconductor chip. In this document, the term "power semiconductor chip" may refer to a semiconductor chip that provides at least one of a high voltage blocking capability or a high current carrying capability. The power semiconductor chip may be configured for high currents having a maximum current value of several amperes, for example 10A, or a maximum current value of up to or exceeding 100A. Similarly, the voltage associated with such a current value may have a value of a few volts to tens or hundreds of volts.

[0031] In a specific non-limiting example, the semiconductor component 6 can be a power transistor (e.g., a power MOSFET) including a gate electrode, a source electrode, and a drain electrode. The drain electrode can be, for example, arranged on a surface of the semiconductor component 6 facing the die pad 2. The drain electrode can be electrically coupled to the die pad 2 and the lead 4A connected to the die pad 2. The gate electrode and the source electrode can be, for example, arranged on a surface of the semiconductor component 6 facing away from the die pad 2. For example, the gate electrode and the source electrode can be connected to the lead 4B and another lead (not shown) respectively by means of an electrical connection element. All three electrodes of the power transistor can be touched from the outside of the encapsulation material 8 via the leads.

[0032] The semiconductor device 100 may include an electrical connection element configured to provide an electrical connection between the semiconductor component 6 and one or both of the leads 4A and 4B. In the example shown, for simplicity, the electrical connection element is not shown. The electrical connection element is not limited to a specific type. For example, the electrical connection element may include or may correspond to at least one of a wire, a clip, a band, etc.

[0033] The encapsulation material 8 may include or be made of at least one of epoxy, filled epoxy, glass fiber filled epoxy, imide, thermoplastic, thermosetting polymer, polymer blend, laminate, etc. The components of the semiconductor device 100 may be encapsulated with the encapsulation material 8 using various techniques, such as at least one of compression molding, injection molding, powder molding, liquid molding, mapping molding, lamination, etc. In the example shown, the encapsulation material 8 may form a body or encapsulant having two opposing main surfaces 14 and a plurality of side surfaces 16 extending between the two main surfaces 14. Due to this packaging, the semiconductor device 100 may also be referred to as a semiconductor package. The leads 4A and 4B may at least partially protrude from the encapsulation material 8 so that the encapsulated semiconductor component 6 can be energized from the outside of the encapsulation material 8.

[0034] The lead 4B may include a portion located outside the encapsulation material 8 and disposed between the twist section 10B and the end section 18B of the lead 4B. Figure 1B As can be seen from the side view of , the portion of lead 4B can have a thickness "t" measured in a direction perpendicular to the main surface 14 of the encapsulation material 8 (i.e., in the z direction in the example shown). In addition, the outer portion of lead 4B can have a width "w" measured in a direction parallel to the main surface 14 of the encapsulation material 8 (i.e., in the x direction in the example shown). The thickness t can be greater than the width w. The same applies to the adjacent lead 4A, which can be formed similarly to lead 4B. It should be noted that the shown cross-sections of leads 4A and 4B can be, for example, along Figure 1A The diagram is taken along the line AA shown in FIG.

[0035] Figure 2A and Figure 2B The semiconductor device 200 may be at least partially similar to Figure 1A and Figure 1B A semiconductor device 100. Figure 1A and Figure 1B In contrast, neither lead 4A nor 4B includes a twisted section. Therefore, the thickness t of lead 4B is always smaller than the width w of lead 4B, and the thickness t of an adjacent lead 4A is always smaller than the width w of an adjacent lead 4A. Figure 2A It can be seen from the top view that the gap distance d between the leads 4A and 4B CLR The lead wires 4A and 4B may extend between the inner remaining dam portions 12A and 12B. The cross-section of the lead wires 4A and 4B may be along the following lines: Figure 2A The line BB shown is taken.

[0036] Comparison between semiconductor devices 100 and 200 shows that for semiconductor device 100, the gap distance d between leads 4A and 4B is CLR In other words, the gap distance d when the leads 4A and 4B are twisted (or include twisted sections 10A and 10B) is CLR The gap distance d can be greater than that when the leads 4A and 4B are not twisted. CLR Note that the gap distance d between the leads 4A and 4B in the semiconductor device 100 is CLR The remaining dam portions 12A and 12B may be independent of the leads 4A and 4B. Comparison between the two examples further shows that for the semiconductor device 100, the creepage distance d between the leads 4A and 4B along the surface of the encapsulation material 8 is CRP In other words, the creepage distance d when the leads 4A and 4B are twisted is CRP The creepage distance d can be compared with the case where the leads 4A and 4B are not twisted. CRP big.

[0037] It should be noted that Figure 1A and Figure 1B In the example shown, both leads 4A and 4B may include twisted sections. In other examples, the gap distance d between leads 4A and 4B may be increased by twisting only one of the leads 4A and 4B. CLR and creepage distance d CRP It should also be noted that Figure 1A and Figure 1B In the example shown, the leads 4A and 4B may be twisted at an angle of approximately ninety degrees, which may increase the gap distance d between the leads 4A and 4B. CLR and creepage distance d CRPIn other examples, the twist angle can be selected to be less than or greater than ninety degrees, and can take essentially any value as long as the gap distance d CLR and / or creepage distance d CRP and Figure 2A and Figure 2B Compared to that, it is increased.

[0038] It should also be noted that Figure 1A and Figure 1B In the example shown, the torsion sections 10A and 10B may be encapsulated in the encapsulation material 8. In other examples, the torsion sections 10A and 10B may be arranged outside the encapsulation material 8. In this case, the creepage distance d between the leads 4A, 4B is CRP Can be similar to Figure 2A and Figure 2B However, the twisted lead segments 10A and 10B arranged outside the encapsulation material 8 can still provide an increased gap distance d between the leads 4A and 4B. CLR .

[0039] The pitch between leads 4A and 4B may be defined as the distance d between the center of lead 4A and the center of lead 4B. pitch .from Figure 1B and Figure 2B It can be seen from the side view of the semiconductor device 100 that the pitch d between the leads 4A and 4B pitch The pitch d between the leads 4A and 4B in the semiconductor device 200 may be similar to pitch In other words, the pitch d between the leads 4A and 4B is pitch It does not necessarily depend on whether the lead wires 4A, 4B are twisted.

[0040] exist Figure 1A and Figure 1B In the semiconductor device 100 of the embodiment of the present invention, the twisted sections 10A and 10B of the leads 4A and 4B can be configured to provide an interlock between the encapsulation material 8 and the leads 4A and 4B. Figure 2A and Figure 2B Such an interlocking feature (or a molded locking feature) may achieve a stronger and more stable mechanical connection between the encapsulating material 8 and the leads 4A, 4B compared to the example of FIG.

[0041] Figure 4A and Figure 4B The semiconductor device 400 may include some or all of the features of the previously described semiconductor devices. The semiconductor device 400 may include a die pad 2, leads 4A and 4B, a semiconductor component 6, and an encapsulation material 8 that at least partially encapsulates these components. The components covered by the encapsulation material 8 may not be visible in practice, but are shown for illustration purposes. Figure 4A . In the example shown, the semiconductor device 400 may also include one or more electrical connection elements 20 (e.g., connecting wires, clips, straps, etc.) for providing an electrical connection between the semiconductor component 6 and one or more of the leads 4A and 4B. In addition, the die pad 2 (or a lead frame including the die pad 2) may optionally include a hole (or threaded hole) 22. The semiconductor device 400 may be attached to another component (e.g., a heat sink) by means of a screw extending through the threaded hole 22.

[0042] Each of the leads 4A and 4B can protrude from the encapsulating material 8 and can extend along a longitudinal axis. In the example shown, the longitudinal axis (and therefore the leads 4A and 4B) can extend along the y-direction. The portion of the lead 4B located outside the encapsulating material 8 can have a thickness "t" measured in a direction perpendicular to the major surface 14 of the encapsulating material 8 (i.e., measured in the z-direction in the example shown). Figure 4A As can be seen from the side view of FIG. 4 , the thickness t of the lead 4B may be substantially similar to the thickness of the die pad 2 in the example shown.

[0043] Furthermore, the portion of the lead 4B located outside the encapsulation material 8 may have a width "w" measured along a direction parallel to the major surface 14 of the encapsulation material 8 (ie, measured along the x-direction in the example shown). Figure 4B As can be seen from the side view of the outer portion, the thickness t of the outer portion can be greater than its width w. The same applies to the adjacent lead 4A, which can be similar to the lead 4B. In a specific but non-limiting example, the thickness t can have a value of about 1.2 mm and the width w can have a value of about 0.6 mm. It should be noted that the leads 4A and 4B of the semiconductor device 400 may not necessarily include, for example, a combination of Figure 1A and Figure 1B In other words, the outer portion of leads 4A and 4B may be untwisted and may, for example, have the same geometry along their entire length.

[0044] Figure 5A and Figure 5B The semiconductor device 500 may be at least partially similar to Figure 4A and Figure 4B A semiconductor device 400. Figure 4A and Figure 4B Compared to the example, Figure 5A and Figure 5BLeads 4A and 4B can be rotated (but not twisted) about the y-axis by an angle of about ninety degrees. Therefore, the thickness t of lead 4B measured along the z-direction is always less than the width w of lead 4B measured along the x-direction. The same applies to lead 4A, which can be similar to lead 4B. In a specific but non-limiting example, the thickness t can have a value of about 0.6 mm and the width w can have a value of about 1.2 mm.

[0045] Figure 4B and Figure 5B A comparison between the side views of FIG. 4 and FIG. 4B shows that for the semiconductor device 400 , the gap distance d between the leads 4A and 4B is CLR In addition, for the semiconductor device 400, the creepage distance d between the leads 4A and 4B along the surface of the encapsulation material 8 is CRP Can be bigger. Figure 4A and Figure 4B In the example, the gap distance d CLR and creepage distance d CRP The added value is not provided by the twisted sections of leads 4A and 4B (e.g., as combined Figure 1A and Figure 1B ), but may instead be based on the fact that the thickness t of the leads 4A and 4B is greater than the width w of the leads 4A and 4B. Note that Figure 4A and Figure 4B as well as Figure 5A and Figure 5B The pitch d between leads 4A and 4B is pitch Can be similar.

[0046] Fig. 6A and Figure 6B The semiconductor device 600 may be at least partially similar to the previously described semiconductor devices. In particular, the semiconductor device 600 may be similar to Figure 2A and Figure 2B A semiconductor device 200. Figure 2A and Figure 2B In contrast, the semiconductor device 600 may include two additional leads 4C and 4D. For simplicity, device components encapsulated in the encapsulation material 8 are not shown.

[0047] In one example, lead 4A may be a power lead electrically connected to a drain electrode of a power transistor chip embedded in encapsulation material 8. In addition, other leads 4B to 4D may include a gate lead electrically connected to a gate electrode of the power transistor chip and a source lead electrically connected to a source electrode of the power transistor chip. Figure 6B It can be seen from the side view that the thickness of the lead 4A measured along the z direction is smaller than the width of the lead 4A measured along the x direction.

[0048] The dimensions of the leads 4A to 4D and the encapsulation material 8 may depend on the specific type and function of the semiconductor device 600. A specific but non-limiting example may be based on the following dimensions. The encapsulation body may have dimensions of approximately (x, y, z)≈(16.0, 21.0, 5.0) mm. The thickness of the die pad 2 in the z direction (in the case of a double-gauge lead frame) may have a value greater than 2.0 mm. Each of the leads 4B to 4D may have a width of approximately 1.2 mm in the x direction. The pitch between the leads 4B to 4D may have a value of approximately 2.54 mm. The thickness of the lead 4A in the z direction may have a value of approximately 0.6 mm. The section of the lead 4A located outside the encapsulation material 8 may have a length of approximately 20 mm measured in the y direction. The maximum width of the power (e.g., drain) lead 4A measured in the x direction may be determined by the creepage distance d between the leads 4A and 4B. CRP and gap distance d CLR In one specific but non-limiting case, the width of the lead 4A measured along the x-direction may be limited to a value of approximately 2 mm.

[0049] Fig. 7A and Figure 7B The semiconductor device 700 may include some or all of the features of the previously described semiconductor devices. For example, the semiconductor device 700 may be at least partially similar to Fig. 6A and Figure 6B A semiconductor device 600. Fig. 6A and Figure 6B In comparison, the thickness of the lead 4A measured along the z direction may be greater than the width of the lead 4A measured along the x direction. Fig. 6A and Figure 6B Compared with the example of CRP and gap distance d CLR The value of can therefore be increased.

[0050] In one example, Fig. 7A and Figure 7B The creepage distance d in the example CRP and gap distance d CLR Increased value can be provided by twisting lead 4A, such as in combination with Figure 1A and Figure 1B In the example shown, the torsion section of the lead 4A may be encapsulated in the encapsulation material 8 and may therefore not be visible. In another example, the creepage distance d CRP and gap distance d CLR The increased value can be provided by increasing the thickness of the lead 4A and reducing the width of the lead 4A, such as in combination with Figure 4A and Figure 4B described. Fig. 6A and Figure 6B Compared to the example, Fig. 7A and Figure 7B The lead 4A can be rotated (but not twisted) by an angle of about ninety degrees. Figure 6B and Figure 7B It can be seen from the side view of that the lead 4A of the two examples can have similar cross-sectional areas in the xz plane. That is, Fig. 6A and Figure 6B as well as Fig. 7A and Figure 7B Lead 4A can be configured to carry currents of similar magnitude. Fig. 7A and Figure 7B In the example of FIG. 5 , the thickness of the lead 4A in the z direction may be greater than the thicknesses of the other leads 4B to 4D.

[0051] Fig. 8A and Figure 8B The semiconductor device 800 may include some or all of the features of the previously described semiconductor devices. In particular, the semiconductor device 800 may be similar to Fig. 7A and Figure 7B A semiconductor device 700. Fig. 7A and Figure 7B In comparison, the thickness of the lead 4A in the z direction can be increased, while the width of the lead 4A in the x direction can be substantially similar. Fig. 7A and Figure 7B as well as Fig. 8A and Figure 8B The creepage distance d between leads 4A and 4B is CRP and gap distance d CLR The values ​​of can be similar. Figure 7B and Figure 8B It can be seen from the side view that Figure 8B In the example of FIG. 4A, the cross-sectional area of ​​the lead 4A can be larger. That is, Fig. 8A and Figure 8B The lead 4A can be configured to be Fig. 7A and Figure 7B The lead 4A carries higher current.

[0052] Fig.9A and Fig. 9B The semiconductor device 900 may include some or all of the features of the previously described semiconductor devices. In particular, the semiconductor device 900 may be similar to Fig. 7A and Figure 7B A semiconductor device 700. Fig. 7A and Figure 7BIn comparison, the width of the lead 4A in the x-direction and the thickness of the lead 4A in the z-direction may both be increased. In the example shown, the width of the lead 4A may have increased in the left direction. Fig. 7A and Figure 7B as well as Fig.9A and Fig. 9B Creepage distance d between leads 4A and 4B CRP and gap distance d CLR The values ​​of can be similar. Figure 7B and Fig. 9B From the side view, we can see that Fig. 9B The cross-sectional area of ​​the lead 4A in the Figure 7B The cross-sectional area of ​​the lead 4A in FIG. Fig. 9B The lead 4A can be configured to be Figure 7B The lead 4A carries higher current.

[0053] FIG. 10A to FIG. 10C A method for manufacturing a semiconductor device and mounting it on a printed circuit board is schematically shown. Fig. 10A In the embodiment, a semiconductor device 1000 may be provided, which may be at least partially similar to Figure 2A and Figure 2B For simplicity, not all previously performed steps for manufacturing the semiconductor device 200 are described. Fig. 10A Method operation of the device (e.g., a molding operation).

[0054] Fig. 10A The semiconductor device 1000 may still include the dam bar 24 that may have been used in a previous manufacturing operation. The dam bar can be used in the lead frame design to facilitate the molding or encapsulation operation and further provide support for the leads of the lead frame. During the encapsulation operation, the dam bar can be configured to act as a clamping surface for the edge of the molding tool and act as a barrier to prevent the molding material from leaking or spilling from the molding tool onto the leads. After the encapsulation operation, the dam bar can be removed so that the leads can be physically and / or electrically individualized according to their respective functions.

[0055] exist Fig. 10B In the embodiment of the present invention, the dam bar 24 may be at least partially removed, for example, using a punching tool (or a cutting tool). When punching the dam bar 24, the punching tool may not necessarily punch into the leads 4A and 4B. Therefore, after punching (or cutting) the dam bar 24, remaining dam bar portions 12A and 12B may remain.

[0056] exist Fig. 10C, the semiconductor device 1000 can be mounted on the upper surface of the printed circuit board 26. In this regard, the leads 4A and 4B can be inserted into the through holes of the printed circuit board 26, wherein electrical connections between the leads 4A, 4B and the electronic structures (e.g., conductor lines) of the printed circuit board 26 can be provided. The semiconductor device 1000 can be referred to as a through-hole semiconductor device (or a through-hole semiconductor package). The leads 4A and 4B arranged in the through holes can be fixed on the bottom surface of the printed circuit board 26 by means of the solder material 28.

[0057] from Fig. 10C As can be seen in FIG. 1 , when the semiconductor device 1000 is mounted on the printed circuit board 26 , the remaining dam portions 12A and 12B can define a distance d between the encapsulation material 8 and the printed circuit board 26 . l And a distance d2 between encapsulation material 8 and end sections 18A, 18B of leads 4A, 4B.

[0058] Fig.11 A side view of a molding tool that can be used in a method for manufacturing a semiconductor device according to the present disclosure is schematically shown. The molding tool 30 may include a bottom portion 30A and an upper portion 30B. The upper surface of the bottom portion 30A may be flat, while the bottom surface of the upper portion 30B may include grooves in which the leads 4A and 4B may be placed during a molding operation, during which an encapsulation 8 of the semiconductor device may be formed.

[0059] As previously combined Figures 10A to 10C As described, the dam can provide a gripping surface for the edge of the molding tool and / or the upper portion 30B. In this case, the bottom surface of the upper portion 30B can be flat. In contrast, if the dam is not used, the upper portion 30B of the molding tool may require grooves to receive the leads 4A and 4B during the molding operation, such as Fig.11 Therefore, when molding a device without a stop bar, you can use Fig.11 Molding tools.

[0060] Fig.12 The semiconductor device 1200 may include some or all of the features of the previously described semiconductor devices. Figures 10A to 10C In the example of , semiconductor device 1200 may correspond to a through-hole semiconductor package. In this regard, it should be noted that the concepts described herein are not limited to a particular device or package type. In other examples, semiconductor devices according to the present disclosure may correspond to other device types, such as surface mount devices (SMDs). Figures 10A to 10C In contrast, the leads 4A and 4B may not include the remaining dam portion, so that the distance d land d2 can be reduced. In this regard, the total length of leads 4A and 4B measured along the y direction can also be reduced, which can achieve enhanced electrical performance. In particular, dynamic and / or static losses can be reduced due to the reduction in lead inductance and / or resistance. Distance d l The reduction of d1 can reduce the inductance between the semiconductor device 1200 and the printed circuit board 26. This is because the electrical path of d1 may be shortened. A longer electrical path for AC current may result in a larger inductance. The closer the semiconductor device 1200 is to the printed circuit board 26, the better the electrical performance due to the reduced inductance. This can be achieved by not including the remaining dam portion of the leads 4A and 4B.

[0061] Fig.13 The semiconductor device 1300 may be similar to Fig.12 A semiconductor device 1200. Fig.12 In contrast, leads 4A and 4B may be twisted or rotated through an angle of approximately ninety degrees about a longitudinal axis extending in the y-direction. Fig.12 , the semiconductor device 1300 may be capable of providing a reduced distance d l and a through-hole semiconductor package of d2. Fig.12 and Fig.13 A comparison between the examples of 2A and 2B shows that the distance between the encapsulation body 8 and the printed circuit board 26 can be reduced regardless of whether the leads 4A and 4B are rotated (or twisted).

[0062] Fig.14 and Fig.15 A flow chart of a method for manufacturing a semiconductor device according to the present disclosure is shown. Fig.14 and Fig.15 The method is provided to qualitatively illustrate various aspects of the present disclosure. The method may include other aspects. For example, the method may be extended by any aspect described herein in combination with other examples. In particular, the method may be used to manufacture the previously described semiconductor device according to the present disclosure.

[0063] Fig.14 A first method for manufacturing a semiconductor device is shown. At 32, a lead extending along a longitudinal axis can be provided. At 34, a segment of the lead can be twisted about the longitudinal axis to provide a twisted segment of the lead. At 36, a semiconductor component of the semiconductor device can be at least partially encapsulated in an encapsulation material, wherein the lead at least partially protrudes from the encapsulation material. The twisted segment of the lead can be encapsulated in the encapsulation material, or the twisted segment of the lead can be located outside the encapsulation material and can provide an increased gap distance between a remaining dam portion of the lead and an adjacent lead.

[0064] The operation of twisting the segments of the lead can be based on any suitable technology. In one example, the segments of the twisted lead can be based on an embossing technique, in particular a three-dimensional embossing technique. In other examples, the twisted lead can be based on folding, forging, etc. If the twisted segments are embedded in the encapsulation material, the twisting of the lead may have been performed before the molding operation. If the twisted segments are arranged outside the encapsulation material, the twisting of the lead can be performed before or after the molding operation. Here, twisting the lead can preferably be performed before the molding operation. In other examples, the twisted lead may have been arranged in a pre-molded lead frame before the encapsulation process. In this case, the pre-molded lead frame can be embedded in the encapsulation material.

[0065] Fig.15 A second method for manufacturing a semiconductor device is shown. At 38, the leads and semiconductor components of the semiconductor device may be at least partially encapsulated in an encapsulation material. The portion of the lead located outside the encapsulation material may have a thickness measured in a direction perpendicular to the main surface of the encapsulation material and a width measured in a direction parallel to the main surface of the encapsulation material. The thickness of the portion of the lead may be greater than the width of the portion of the lead.

[0066] The semiconductor device and the manufacturing method thereof according to the present disclosure can provide the following technical effects and can be superior to conventional devices in various aspects.

[0067] The semiconductor device according to the present disclosure can provide an increased creepage distance and an increased clearance distance between adjacent leads, which can result in higher isolation performance between the leads. In this regard, the clearance distance may not necessarily depend on the remaining bar portion of the lead or the associated bar cutting accuracy.

[0068] The semiconductor device according to the present disclosure may have a package size, package footprint, and lead pitch similar to those of conventional semiconductor devices. Therefore, it may not be necessary to change the design of a customer board on which the semiconductor device may be mounted.

[0069] Compared to conventional semiconductor devices, semiconductor devices according to the present disclosure can provide twisted leads with reduced widths. Due to such reduced widths of the leads, package designs with increased lead counts can be considered.

[0070] A semiconductor device according to the present disclosure may include a twisted lead segment disposed within an encapsulation material. The twisted segment may provide an interlock between the encapsulation material and the corresponding lead. This interlocking feature may achieve a stronger mechanical connection between the encapsulation material and the lead.

[0071] Example

[0072] In the following, a semiconductor device according to the present disclosure and a method for manufacturing such a semiconductor device are described by means of examples.

[0073] Example 1 is a semiconductor device, comprising: an encapsulation material that at least partially encapsulates a semiconductor component of the semiconductor device; and a lead that protrudes from the encapsulation material and extends along a longitudinal axis, the lead comprising a torsion section, the lead twisted around the longitudinal axis along the torsion section, wherein: the torsion section of the lead is encapsulated in the encapsulation material, or the torsion section of the lead is located outside the encapsulation material and is capable of providing an increased gap distance between the remaining barrier portion of the lead and an adjacent lead.

[0074] Example 2 is the semiconductor device according to Example 1, wherein, in a case where the lead is twisted, a gap distance between the lead and an adjacent lead is larger than in a case where the lead is not twisted.

[0075] Example 3 is a semiconductor device according to Example 1 or 2, wherein, when the lead is twisted, a creepage distance between the lead and an adjacent lead along the surface of the encapsulation material is greater than when the lead is not twisted.

[0076] Example 4 is a semiconductor device according to any of the preceding examples, wherein a pitch between the lead and an adjacent lead when the lead is twisted is similar or identical to a pitch when the lead is not twisted.

[0077] Example 5 is a semiconductor device according to any of the preceding examples, wherein the lead is twisted about the longitudinal axis by an angle of approximately ninety degrees.

[0078] Example 6 is a semiconductor device according to any of the preceding examples, wherein the twisted section of the lead is configured to provide an interlock between the encapsulation material and the lead when the twisted section of the lead is encapsulated in the encapsulation material.

[0079] Example 7 is a semiconductor device according to any of the preceding examples, wherein a gap distance between the lead and an adjacent lead is independent of a remaining dam portion of the lead.

[0080] Example 8 is a semiconductor device according to any one of the preceding examples, wherein: a portion of the lead located outside the encapsulation material and arranged between the torsional section and the end of the lead has a thickness measured in a direction perpendicular to the main surface of the encapsulation material and a width measured in a direction parallel to the main surface of the encapsulation material, and the thickness of the portion of the lead is greater than the width of the portion of the lead.

[0081] Example 9 is a semiconductor device according to any one of the preceding examples, wherein the semiconductor device further comprises: adjacent leads protruding from the encapsulation material and extending along another longitudinal axis, wherein the adjacent leads comprise another twisting section, and the adjacent leads are twisted around the other longitudinal axis along the other twisting section.

[0082] Example 10 is a semiconductor device according to any of the preceding examples, wherein the semiconductor device is a through-hole semiconductor package.

[0083] Example 11 is a semiconductor device, comprising: an encapsulation material that at least partially encapsulates a semiconductor component of the semiconductor device; and a first lead protruding from the encapsulation material, wherein a portion of the first lead located outside the encapsulation material has a thickness measured in a direction perpendicular to a main surface of the encapsulation material and a width measured in a direction parallel to the main surface of the encapsulation material, and wherein the thickness of the portion of the first lead is greater than the width of the portion of the first lead.

[0084] Example 12 is a semiconductor device according to Example 11, wherein: the first lead is a power lead mechanically connected to a die pad, and the first lead and the die pad are made of a single metal piece.

[0085] Example 13 is a semiconductor device according to Example 12, wherein the first lead and the die pad have the same thickness.

[0086] Example 14 is a semiconductor device according to any one of Examples 11 to 13, further comprising: a second lead adjacent to the first lead, wherein a thickness of the first lead is greater than a thickness of the second lead.

[0087] Example 15 is a semiconductor device according to any one of Examples 11 to 14, wherein a portion of the first lead located outside the encapsulation material has a same geometry along its entire length in the longitudinal direction.

[0088] Example 16 is a method for manufacturing a semiconductor device, the method comprising: providing a lead extending along a longitudinal axis; twisting a segment of the lead around the longitudinal axis to provide a twisted segment of the lead; and at least partially encapsulating a semiconductor component of the semiconductor device in an encapsulation material, wherein the lead at least partially protrudes from the encapsulation material, wherein: the twisted segment of the lead is encapsulated in the encapsulation material, or the twisted segment of the lead is located outside the encapsulation material and is capable of providing an increased gap distance between the remaining barrier portion of the lead and an adjacent lead.

[0089] Example 17 is the method of Example 16, wherein twisting the segments of the leads is based on a three-dimensional embossing technique.

[0090] Example 18 is a method for manufacturing a semiconductor device, the method comprising: at least partially encapsulating the leads and semiconductor components of the semiconductor device in an encapsulation material, wherein a portion of the lead located outside the encapsulation material has a thickness measured in a direction perpendicular to a main surface of the encapsulation material and a width measured in a direction parallel to the main surface of the encapsulation material, and wherein the thickness of the portion of the lead is greater than the width of the portion of the lead.

[0091] As used in this specification, the terms "connected", "coupled", "electrically connected" and / or "electrically coupled" may not necessarily mean that elements must be directly connected or coupled together. Intermediate elements may be provided between the elements that are "connected", "coupled", "electrically connected" or "electrically coupled".

[0092] In addition, the term "on" used in relation to, for example, a material layer formed on or located "on" a surface of an object may be used herein to mean that the material layer may be "directly" (e.g., formed, deposited, etc.) on the surface, e.g., in direct contact with the surface. The term "on" used in relation to, for example, a material layer formed on or located "on" a surface may also be used herein to mean that the material layer may be "indirectly" (e.g., formed, deposited, etc.) on the surface, with, for example, one or more additional layers disposed between the surface and the material layer.

[0093] Furthermore, to the extent the terms "having," "including," "containing," "with," or variations thereof are used in the detailed description or claims, these terms are intended to be inclusive in a manner similar to the term "comprising." That is, as used herein, the terms "having," "including," "containing," "with," "including," and the like are open-ended terms that indicate the presence of stated elements or features but do not preclude additional elements or features. The articles "a," "an," and "the" are intended to include the plural as well as the singular, unless the context clearly dictates otherwise.

[0094] In addition, the word "exemplary" is used herein to mean used as an example, instance or illustration. Any aspect or design described herein as "exemplary" is not necessarily to be construed as superior to other aspects or designs. On the contrary, the use of the word exemplary is intended to present concepts in a concrete way. As used in this application, the term "or" is intended to represent an inclusive "or" rather than an exclusive "or". That is, unless otherwise specified or clear from the context, "X adopts A or B" is intended to represent any natural inclusive arrangement. That is, if X adopts A; X adopts B; or X adopts both A and B, then "X adopts A or B" is satisfied in any of the aforementioned instances. In addition, unless otherwise specified or clear from the context that it is for a singular form, the articles "one" and "an" used in this application and the appended claims can generally be interpreted as meaning "one or more". In addition, at least one of A and B or the like generally refers to A or B or both A and B.

[0095] Devices and methods for making the devices are described herein. Comments made in connection with the described devices may also apply to the corresponding methods, and vice versa. For example, if specific components of a device are described, the corresponding methods for making the device may include operations for providing the components in a suitable manner, even if such operations are not explicitly described or shown in the drawings.

[0096] Although the present disclosure has been shown and described for one or more embodiments, other technical personnel in the art will think of equivalent changes and modifications based at least in part on the reading and understanding of this specification and the drawings. The present disclosure includes all such modifications and changes and is limited only by the concepts of the appended claims. In particular, with respect to the various functions performed by the above-mentioned components (e.g., elements, resources, etc.), unless otherwise specified, the terms used to describe these components are intended to correspond to any component that performs the specific functions of the components (e.g., functionally equivalent), even if the structure is not structurally equivalent to the disclosed structure that performs the functions in the exemplary embodiments shown herein of the present disclosure. In addition, although the specific features of the present disclosure may be disclosed only with respect to one of the multiple embodiments, such features may be combined with one or more other features of other embodiments, as may be desired and advantageous for any given or specific application.

Claims

1. A semiconductor device, comprising: An encapsulation material (8) at least partially encapsulating a semiconductor component (6) of the semiconductor device; as well as A lead (4) protruding from the encapsulation material (8) and extending along a longitudinal axis, the lead (4) comprising a twisting section (10), the lead (4) twisting around the longitudinal axis along the twisting section (10), wherein: The torsional section (10) of the lead (4) is encapsulated in the encapsulation material (8), and there is no further torsional section on the outer portion of the lead (4) protruding from the encapsulation material (8), so that the outer portion of the lead (4) extends along a plane different from the plane along which the innermost portion of the lead (4) extends, or The twisted section (10) of the lead (4) is located outside the encapsulation material (8) and is capable of providing an increased gap distance between the remaining stopper portion (12) of the lead (4) and an adjacent lead (4), wherein the twisted section (10) is located between the encapsulation material (8) and the remaining stopper portion (12).

2. The semiconductor device according to claim 1, wherein When the lead wire (4) is twisted, the gap distance between the lead wire (4) and an adjacent lead wire (4) is larger than when the lead wire (4) is not twisted.

3. The semiconductor device according to claim 1 or 2, wherein: When the lead (4) is twisted, the creepage distance between the lead (4) and an adjacent lead (4) along the surface of the encapsulation material (8) is greater than when the lead (4) is not twisted.

4. A semiconductor device according to any one of the preceding claims, wherein: When the lead wire (4) is twisted, the pitch between the lead wire (4) and an adjacent lead wire (4) is similar to or the same as the pitch when the lead wire (4) is not twisted.

5. A semiconductor device according to any one of the preceding claims, wherein: The lead (4) is twisted around the longitudinal axis at an angle of approximately ninety degrees.

6. A semiconductor device according to any one of the preceding claims, wherein: The torsion section (10) of the lead (4) is configured to provide an interlock between the encapsulation material (8) and the lead (4) when the torsion section (10) of the lead (4) is encapsulated in the encapsulation material (8).

7. A semiconductor device according to any one of the preceding claims, wherein: The gap distance between the lead (4) and an adjacent lead (4) is independent of the remaining barrier portion (12) of the lead (4).

8. A semiconductor device according to any one of the preceding claims, wherein: The portion of the lead (4) located outside the encapsulation material (8) and arranged between the torsion section (10) and the end (18) of the lead (4) has a thickness measured in a direction perpendicular to the main surface (14) of the encapsulation material (8) and a width measured in a direction parallel to the main surface (14) of the encapsulation material (8), and The thickness of the portion of the lead (4) is greater than the width of the portion of the lead (4).

9. A semiconductor device according to any one of the preceding claims, wherein: The semiconductor device further comprises: an adjacent lead (4) protruding from the encapsulation material (8) and extending along another longitudinal axis, The adjacent lead (4) comprises another twisting section (10), and the adjacent lead (4) is twisted around the other longitudinal axis along the other twisting section (10).

10. A semiconductor device according to any one of the preceding claims, wherein: The semiconductor device is a through-hole semiconductor package.

11. A semiconductor device comprising: An encapsulation material (8) at least partially encapsulating a semiconductor component (6) of the semiconductor device; as well as a first lead (4) protruding from the encapsulation material (8) and extending along the longitudinal axis, wherein the portion of the first lead (4) located outside the encapsulation material (8) has a thickness measured in a direction perpendicular to the main surface (14) of the encapsulation material (8) and a width measured in a direction parallel to the main surface (14) of the encapsulation material (8), wherein the thickness of the portion of the first lead (4) is greater than the width of the portion of the first lead (4), and The first lead (4) is not twisted along the longitudinal axis.

12. The semiconductor device according to claim 11, wherein: The first lead (4) is a power lead mechanically connected to the die pad (2), and The first lead (4) and the bare chip pad (2) are made of a single metal piece.

13. The semiconductor device according to claim 12, wherein: The first lead (4) and the bare chip pad (2) have the same thickness.

14. The semiconductor device according to any one of claims 11 to 13, wherein: The semiconductor device further comprises: A second lead (4) adjacent to the first lead (4), the thickness of the first lead (4) being greater than the thickness of the second lead (4).

15. The semiconductor device according to any one of claims 11 to 14, wherein: The portion of the first lead (4) located outside the encapsulation material (8) has the same geometry along its entire length in the longitudinal direction.

16. A method for manufacturing a semiconductor device, the method comprising: providing a lead (4) extending along the longitudinal axis; twisting a section of the lead about the longitudinal axis to provide a twisted section (10) of the lead (4); as well as The semiconductor component (6) of the semiconductor device is at least partially encapsulated in an encapsulation material (8), the lead (4) at least partially protruding from the encapsulation material (8), wherein: The torsional section (10) of the lead (4) is encapsulated in the encapsulation material (8), and there is no further torsional section on the outer portion of the lead (4) protruding from the encapsulation material (8), so that the outer portion of the lead (4) extends along a plane different from the plane along which the innermost portion of the lead (4) extends, or The twisted section (10) of the lead (4) is located outside the encapsulation material (8) and is capable of providing an increased gap distance between the remaining stopper portion (12) of the lead (4) and an adjacent lead (4), wherein the twisted section (10) is located between the encapsulation material (8) and the remaining stopper portion (12).

17. The method according to claim 16, wherein: Twisting the sections of the lead (4) is based on three-dimensional embossing technology.

18. A method for manufacturing a semiconductor device, the method comprising: The leads (4) and the semiconductor components (6) of the semiconductor device are at least partially encapsulated in an encapsulation material (8), wherein the portion of the lead (4) located outside the encapsulation material (8) has a thickness measured in a direction perpendicular to a main surface (14) of the encapsulation material (8) and a width measured in a direction parallel to the main surface (14) of the encapsulation material (8), and wherein the thickness of the portion of the lead (4) is greater than the width of the portion of the lead (4), and Therein, the lead wire (4) extends along a longitudinal axis and is not twisted along the longitudinal axis.

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