Plasma processing apparatus

Abstract

The invention provides a plasma processing apparatus which can confirm the state of an antenna and the surrounding of the antenna even if an inner side cover is arranged. A plasma processing apparatus (1) is provided with: a housing (2) provided with a first opening (2b); a vacuum cover (4) that is detachably attached to the first opening (2b) and blocks the first opening (2b); a dielectric radome (5) supported inside the first opening (2b); an antenna (8), which is disposed in an antenna housing space (AK) surrounded by at least the vacuum cover (4) and the antenna cover (5), and which generates inductively coupled plasma; a viewing port (4b) which is provided in the vacuum cover (4) and has light transmittance; and an optical sensor (14) that receives light that has passed through the inside of the antenna housing space (AK) of the viewing port (4b).

Description

Technical Field

[0001] The invention relates to a plasma processing device. Background Art

[0002] There is known a plasma processing apparatus that generates inductively coupled plasma in a vacuum container using an antenna disposed in the vacuum container. Depending on the type of the plasma processing apparatus, the plasma processing apparatus performs a predetermined plasma processing on a substrate to be processed using the generated plasma.

[0003] For example, the plasma processing apparatus described in Patent Document 1 includes an antenna placement unit that places a high-frequency antenna inside a cavity provided in an upper wall of a vacuum container, and a partition plate provided to cover the entire inner surface side of the upper wall.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2012 / 033191 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, in the conventional plasma processing apparatus as described above, there is a problem that the state of the antenna and its surroundings cannot be confirmed during the operation of the plasma processing.

[0009] The present disclosure is made in view of the above-mentioned problems, and an object of the present disclosure is to provide a plasma processing apparatus that can check the state of an antenna and its surroundings even when an inner cover is provided.

[0010] Means of solving problems

[0011] In order to solve the above-mentioned problems, a plasma processing device according to one aspect of the present disclosure includes a processing chamber, wherein the plasma processing device includes: a shell having an opening portion connecting the processing chamber with an external environment; an outer cover installed on the opening portion in a detachable manner and closing the opening portion; an inner cover supported inside the opening portion and having dielectric properties; an antenna disposed in an enclosed space formed by at least the outer cover and the inner cover, and used to generate inductively coupled plasma; a light transmitting portion disposed on the outer cover and having light transmittance; and a light receiving element receiving light in the enclosed space that has passed through the light transmitting portion.

[0012] Effects of the Invention

[0013] According to an embodiment of the present disclosure, a plasma processing apparatus can be provided that can check the state of an antenna and its surroundings even when an inner cover is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] [ Figure 1 ] is a diagram illustrating the structure of the plasma processing device of embodiment 1 of the present disclosure.

[0015] [ Figure 2 ]yes Figure 1 Sectional view along line II-II.

[0016] [ Figure 3 ] is a waveform diagram illustrating an operation example of the plasma processing device.

[0017] [ Figure 4 ] is a diagram illustrating the structure of the plasma processing device of embodiment 2 of the present disclosure.

[0018] [ Figure 5 ]yes Figure 4 VV line profile.

[0019] [ Figure 6 ] is a diagram illustrating the specific wiring of the antenna in the plasma processing device of variant example 1.

[0020] [ Figure 7 ] is a diagram illustrating the specific wiring of the antenna in the plasma processing device of variant example 2.

[0021] [ Figure 8 ] is a diagram illustrating the specific wiring of the antenna in the plasma processing device of variant example 3. DETAILED DESCRIPTION

[0022] [Implementation method 1]

[0023] Below, use Figure 1 and Figure 2 Embodiment 1 of the present disclosure will be described in detail. Figure 1 This is a diagram for explaining the structure of the plasma processing apparatus 1 according to the first embodiment of the present disclosure. Figure 2 yes Figure 1 Sectional view along line II-II.

[0024] Furthermore, in the following description, a plasma processing device 1 is used as an example for explanation. The plasma processing device 1 performs a film forming process as a predetermined plasma process. The film forming process forms a predetermined film on the surface of a processed substrate H1 as a processed object by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma.

[0025] However, the present disclosure can be applied to a plasma processing device 1 that performs, for example, a film forming process of forming a predetermined film on a substrate H1 to be processed by a sputtering method as a predetermined plasma processing. In addition, the present disclosure can be applied to a plasma processing device 1 that performs a surface processing process of performing a predetermined processing on the surface of the substrate H1 to be processed by using plasma, such as an etching process or an ashing process as a predetermined plasma processing. Furthermore, in a plasma processing device 1 that performs a sputtering method, a target material is, for example, disposed inside a plasma generation region HA described later.

[0026] <Structure of plasma processing apparatus 1>

[0027] like Figure 1 As shown in FIG. 1 , the plasma processing apparatus 1 of the first embodiment includes a housing 2, a flange 3, a vacuum cover 4, an antenna cover 5, and a stage 6. In addition, the plasma processing apparatus 1 includes an antenna 8, an optical sensor 14, and a control device 15. In addition, in the plasma processing apparatus 1, as shown in FIG. Figure 2 As shown, a plurality of antennas 8, for example, four antennas 8 are provided, and a vacuum cover 4, an antenna cover 5, and an optical sensor 14 are provided for each antenna 8. Furthermore, in the plasma processing apparatus 1, the substrate H1 to be processed is transported between the stage 6 and a known load lock chamber by a transport mechanism (not shown).

[0028] The substrate H1 to be processed may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display or an organic electroluminescence (EL) panel display. In addition, the substrate H1 to be processed may be a semiconductor substrate for various purposes. The plasma processing device 1 forms a predetermined film such as a barrier (moisture-proof) film on the substrate H1 to be processed by the predetermined plasma processing.

[0029] <Case 2>

[0030] The housing 2 includes a housing body 2a, the housing body 2a is used to form a processing chamber for performing the prescribed plasma processing on the substrate H1 to be processed, and a first opening 2b for connecting the processing chamber with the external environment is provided at the upper portion of the housing body 2a. In the plasma processing device 1 of the present embodiment, the housing 2 has a box-shaped housing body 2a with an upper opening, and a flange 3 having a plurality of openings is airtightly mounted on the upper surface side of the housing body 2a. In the plasma processing device 1, when the flange 3 is mounted on the housing body 2a, the opening of the flange 3 can be said to be the first opening 2b for connecting the processing chamber with the external environment.

[0031] <Flange 3>

[0032] like Figure 2 As shown, the flange 3 includes, for example, a rectangular frame having two first sides 3a facing each other, and two second sides 3b (3b) that are orthogonal to the first sides 3a and facing each other. Figure 1 ). In addition, the flange 3 includes, for example, a third side portion 3c, a fourth side portion 3d, and a fifth side portion 3e provided on the inner side of the frame body from one of the second side portions 3b to the other second side portion 3b. That is, both ends of the third side portions 3c, the fourth side portion 3d, and the fifth side portion 3e are formed continuously with the second side portion 3b. The third side portion 3c, the fourth side portion 3d, and the fifth side portion 3e may be formed between the two first side portions 3a to be parallel to the first side portion 3a.

[0033] In addition, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a protrusion protruding toward the first opening 2b (details will be described later). Furthermore, in the following description, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e are collectively referred to as the side 3h.

[0034] <Vacuum cover 4>

[0035] In addition, in the plasma processing apparatus 1, the vacuum cover 4 that blocks the first opening 2b is configured to be installed on the first opening 2b in a detachable manner. That is, the vacuum cover 4 is airtightly installed on the flange 3 in a manner of blocking the first opening 2b, and is reversibly installed to be detachable from the flange 3. Here, the flange 3 may have a protrusion, and the protrusion is formed to gradually reduce the opening area of ​​the first opening 2b in a direction from the external environment toward the processing chamber. For example, the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a first support portion protruding in the first opening 2b in a manner of locking the peripheral portion of the vacuum cover 4. The first support portion may be a part of the protrusion.

[0036] In addition, the vacuum cover 4 is an example of an outer cover, and is supported by the upper surface of the second side portion 3b and the upper surface of the first support portion in the first side portion 3a, the third side portion 3c, the fourth side portion 3d, and the fifth side portion 3e. In addition, the vacuum cover 4 includes, for example, a flat cover body 4a and a viewing port 4b provided on the cover body 4a. The cover body 4a is made of metal, for example. In addition, the viewing port 4b is made of, for example, a transparent synthetic resin material or a transparent glass material, and constitutes a light-transmitting portion having light transmittance.

[0037] <Radome 5>

[0038] In addition, in the plasma processing apparatus 1, the antenna cover 5 is supported inside the first opening 2b in a manner that is detachable relative to the flange 3. Specifically, Figure 1 and Figure 2 As shown, the antenna cover 5 includes, for example, an antenna housing portion 5a having a U-shaped cross section. In addition, the antenna cover 5 includes a cover support portion 5b and a cover opening portion 5c. The cover support portion 5b is a flange portion formed continuously from both ends of the antenna housing portion 5a having a U-shaped cross section and formed in a manner extending outward from the ends of the antenna housing portion 5a. That is, the cover support portion 5b has an outward flange shape.

[0039] Here, for example, the side portion 3h of the flange 3 may have a second support portion protruding inside the first opening 2b so as to lock the peripheral portion of the antenna cover 5. The second support portion is a part of the protruding portion, and protrudes further toward the inside of the first opening 2b than the first support portion (the protruding length is larger). When the antenna cover 5 is supported inside the first opening 2b, the cover support portion 5b is supported by (the second support portion of) the side portion 3h of the flange 3. In addition, the antenna cover 5 has a cover opening 5c ​​formed by being surrounded by the antenna accommodating portion 5a.

[0040] In addition, the antenna cover 5 is made of a dielectric material such as alumina, and constitutes an inner cover having dielectric properties. In addition, in the antenna cover 5, the antenna housing portion 5a is formed in a manner consistent with the shape of the antenna 8 held, and is configured to cover the outer peripheral surface of the antenna 8 in correspondence with the outer peripheral surface. In addition, in the antenna cover 5, the cover support portion 5b is supported on the edge portion 3h of the flange 3 in a detachable manner. Furthermore, in the antenna cover 5, the cover opening portion 5c is provided in a manner opening on the vacuum cover 4 side. The cover opening portion 5c is an example of a second opening portion constituting a part of the antenna housing space AK described later.

[0041] Furthermore, an opaque light-proof material having a large haze value is used for the antenna cover 5. Thus, in the first embodiment, the possibility that the optical sensor 14 receives light from the plasma generation area HA described later is greatly reduced.

[0042] In addition, an antenna housing space AK surrounded by at least a vacuum cover 4 and an antenna cover 5 is formed in the housing 2. The antenna housing space AK is an example of an enclosed space, and an antenna 8 for generating inductively coupled plasma is housed. However, in the antenna housing space AK, the size of the space is set to a size that cannot sustain the plasma generated by the antenna 8, and thus functions as a plasma non-generating area.

[0043] <Antenna 8>

[0044] The antenna 8 is cylindrical, for example, and is made of a metal material such as copper. One end and the other end of the antenna 8 are electrically insulated from the vacuum cover 4 via the antenna insulating portion 13A and the antenna insulating portion 13B, respectively, and are pulled out of the housing 2 in an airtight manner.

[0045] In addition, the antenna 8 is provided with a cooler 12, and the antenna 8 is cooled to a predetermined temperature by a cooling medium, such as cooling water, that circulates through the cooler 12. Specifically, the cooler 12 includes: a cooler body 12a, which includes a driving unit such as a pump (not shown) for circulating cooling water; and a pipe 12b, which is airtightly connected to the cooler body 12a. In addition, the pipe 12b is also arranged in the internal space of the antenna 8, and is configured to use the internal space of the antenna 8 as a circulation path for cooling water. That is, in the antenna 8, as shown in FIG. Figure 1 As indicated by arrows R1 and R2 , the antenna 8 is cooled by causing cooling water to flow through the internal space of the antenna 8 .

[0046] In addition, an impedance adjusting unit 10 and an impedance adjusting unit 11 are electrically connected to one end and the other end of the antenna 8, respectively. The impedance adjusting unit 10 includes a matching circuit (not shown), and one end of the antenna 8 is connected to the power supply 9 via the matching circuit. In addition, the impedance adjusting unit 11 includes a variable capacitor, and the other end of the antenna 8 is electrically grounded via the variable capacitor.

[0047] The power supply 9 supplies, for example, 13.56 MHz high-frequency power to one end of the antenna 8 via the impedance adjustment unit 10. In the plasma processing apparatus 1, the control unit 15a of the control device 15 controls so that the high-frequency power is efficiently supplied to the antenna 8 by changing the capacitance of the variable capacitor of the impedance adjustment unit 11. In the first embodiment, the power supply 9, the impedance adjustment unit 10, and the impedance adjustment unit 11 are provided for each antenna 8, and the control unit 15a can control the generation of plasma generated in each antenna 8 by controlling the power supply 9 for each antenna 8.

[0048] In addition, in the housing 2, by installing the antenna cover 5 inside the first opening 2b, the internal space of the housing 2 is delimited and a plasma generation area HA is formed inside the housing body 2a. A carrier 6 and a substrate H1 to be processed supported by the carrier 6 are arranged inside the plasma generation area HA, and the plasma generation area HA substantially constitutes the processing chamber. In other words, in the housing 2, the plasma generation area HA is separated from the plasma non-generation area by the antenna cover 5.

[0049] Furthermore, in the housing 2, the flange 3 and the vacuum cover 4 are respectively airtightly mounted to the housing body 2a and the flange 3, thereby forming a vacuum container including the processing chamber. Figure 1 As shown, in the housing 2, the vacuum pump PO is connected to the housing body 2a, and the control unit 15a controls the vacuum pump PO, whereby the interior of the plasma generation area HA becomes a predetermined vacuum degree at least during the plasma treatment. Figure 1 As shown, the housing 2 and the carrier 6 are electrically grounded respectively.

[0050] Furthermore, a pressure gauge (not shown) for detecting the pressure (vacuum degree) inside the plasma generation area HA is provided in the housing 2 , and the control unit 15 a controls the vacuum degree inside the plasma generation area HA using the detection result of the pressure gauge.

[0051] In addition, a temperature sensor (not shown) for detecting the temperature of the stage 6 is provided in the housing 2, and the detection result of the temperature sensor is output to the control unit 15a. Then, the control unit 15a controls the stage 6 to a predetermined set temperature during the plasma processing by performing feedback control using the input detection result of the temperature sensor.

[0052] In addition, the housing 2 includes a processing gas supply unit (not shown) corresponding to the predetermined plasma processing, and the plasma processing is performed under the processing gas atmosphere. The processing gas supply unit introduces a processing gas including a film-forming gas for the film into the plasma generation area HA (processing chamber) of the housing 2. The processing gas is, for example, argon, hydrogen, nitrogen, silane, or oxygen.

[0053] <Optical sensor 14>

[0054] The optical sensor 14 is formed using a light receiving element such as a solid-state imaging element such as a photodiode, a phototransistor, or a CCD sensor, etc. The optical sensor 14 is mounted on the vacuum cover 4 via a jig (not shown) so as to be on the viewing port 4b.

[0055] In addition, in this embodiment 1, if Figure 1 As shown, the view port 4b and the optical sensor 14 are disposed at a position facing the central portion of the linear portion of the antenna 8. The optical sensor 14 receives light generated from the central portion and the surrounding portion of the antenna 8 in the antenna accommodation space AK via the view port 4b, and outputs an output value indicating the received detection result to the control device 15.

[0056] <Control device 15>

[0057] The control device 15 includes a control unit 15a and a light emission spectrometer 15b. The control unit 15a is a functional block that includes, for example, a central processing unit (CPU), a random access memory (RAM), a read only memory (ROM), etc., and controls various parts of the plasma processing device 1 according to information processing. Specifically, the control unit 15a uses, for example, the detection result of the optical sensor 14 to perform a predetermined control process on the plasma processing of the substrate H1 to be processed in the plasma generation area HA.

[0058] Specifically, the control unit 15a is configured to set a predetermined threshold value for the output value of the optical sensor 14 for each optical sensor 14, that is, for each antenna 8. The control unit 15a can execute a predetermined control process using the threshold value as described in detail below.

[0059] The light emission spectrometer 15b performs a predetermined spectroscopic analysis process on the detection result of the optical sensor 14, and outputs the spectroscopic analysis result to the control unit 15a. Thus, in the control unit 15a, when plasma is generated in the antenna housing space AK, the elements and the concentrations of the elements contained in the plasma can be detected based on the spectroscopic analysis result. Furthermore, in the control unit 15a, the cause of the plasma generation can be easily grasped based on the detection result. In addition, even if an abnormal discharge occurs in the antenna housing space AK, the control unit 15a can detect the elements and the concentrations of the elements contained in the light of the abnormal discharge based on the spectroscopic analysis result.

[0060] <Action Example>

[0061] Also used Figure 3 An operation example of the plasma processing apparatus 1 according to the first embodiment will be described in detail. Figure 3 This is a waveform diagram for explaining an operation example of the plasma processing apparatus 1. In the following description, the control process of the power supply 9 using a threshold value in the control unit 15a is mainly described.

[0062] The control unit 15a controls the power supply 9 by comparing the output value of the optical sensor 14 with a threshold value. Figure 3As shown in the curve 50 of FIG. 1 , the control unit 15a detects the luminous intensity of the light generated from the antenna accommodation space AK represented by the output value of the optical sensor 14. When the control unit 15a detects that the output value of the optical sensor 14 reaches or exceeds the threshold value at time T1, the control unit 15a stops the power supply 9. Figure 3 As shown by the middle straight line 70, the ON state is switched to the OFF state at time T1. As a result, the supply of power to the antenna 8 is stopped, and the generation of plasma by the antenna 8 is also stopped.

[0063] Furthermore, when the control unit 15 a detects that the output value of any one of the plurality of optical sensors 14 is equal to or greater than a threshold value, the control unit 15 a stops all the power supplies 9 .

[0064] Furthermore, in the case where the control process of the power supply 9 in the control unit 15a is not executed, Figure 3 As shown by the dotted line 80, after the time T1 has passed, the power supply 9 is not stopped but remains in the ON state. Figure 3 As shown by the middle dotted line 60 , the luminous intensity of the light generated from the antenna housing space AK also rises to the upper limit value after the time T1 has passed.

[0065] The plasma processing device 1 of the present embodiment 1 constructed as described above includes: a housing 2 provided with a first opening 2b; and a vacuum cover 4 detachably mounted on the first opening 2b and closing the first opening 2b. In addition, the plasma processing device 1 includes: an antenna cover 5 supported inside the first opening 2b and having dielectric properties; and an antenna 8 disposed in an antenna accommodation space AK formed by at least the vacuum cover 4 and the antenna cover 5, for generating inductively coupled plasma. In addition, the plasma processing device 1 includes: a view port 4b provided in the vacuum cover 4 and having light transmittance; and an optical sensor 14 that receives light in the antenna accommodation space AK that has passed through the view port 4b.

[0066] With the above structure, in the plasma processing apparatus 1 of the present embodiment 1, the antenna 8 and the surrounding conditions can be confirmed even when the antenna cover 5 is provided. Specifically, in the present embodiment 1, when an abnormal discharge or plasma is generated in the antenna housing space AK, the control device 15 can detect the generation of the abnormal discharge or plasma using the detection result of the optical sensor 14.

[0067] In addition, in the plasma processing apparatus 1 of the first embodiment, the control unit 15a performs a predetermined control process on the plasma processing of the power source 9 and the substrate H1 to be processed in the plasma generation area HA using the detection result of the optical sensor 14. Thus, in the first embodiment, the control unit 15a can properly operate the plasma processing apparatus 1 based on the detection result of the optical sensor 14. In addition, in the first embodiment, the control unit 15a can make the antenna 8 operate more properly, and can reliably suppress the generation of abnormal discharge or plasma in the antenna housing space AK, thereby more reliably suppressing the generation of damage to the antenna 8.

[0068] Furthermore, in the plasma processing apparatus 1 of the first embodiment, as Figure 3 As shown in the example, when the control unit 15a detects that the output value of the optical sensor 14 is greater than a predetermined threshold value, the power supply 9 is stopped. In this way, in the first embodiment, the control unit 15a can more appropriately control the power supply 9, and can more reliably suppress the generation of abnormal discharge or plasma in the antenna accommodation space AK, so that the plasma processing device 1 can operate more appropriately.

[0069] In addition, in the plasma processing apparatus 1 of the first embodiment, the control unit 15a stops all the power supplies 9 when detecting that the output value of any one of the plurality of optical sensors 14 is greater than a threshold value. Thus, in the first embodiment, even when a plurality of antennas 8 are provided, the control unit 15a can more reliably suppress the generation of abnormal discharge or plasma in each of the plurality of antenna accommodating spaces AK, thereby enabling the plasma processing apparatus 1 to reliably perform more appropriate operations.

[0070] In addition, in the plasma processing apparatus 1 of the present embodiment 1, the flange 3 for detachably supporting the antenna cover 5 is provided on the first opening portion 2b side of the housing 2. Thus, in the present embodiment 1, the antenna cover 5 can be easily provided on the housing 2. Furthermore, in the present embodiment 1, the vacuum cover 4, the antenna cover 5, the antenna 8, etc. can be easily removed from the housing 2, so that the plasma processing apparatus 1 with excellent maintainability can be easily configured.

[0071] Furthermore, in the above description, a case is described in which a threshold is set for the control device 15, and the control unit 15a performs control using the threshold and the output value of the optical sensor 14, but the present disclosure is not limited to this. For example, a display unit for displaying information may be provided in the control device 15, and the detection result of the optical sensor 14 may be displayed on the display unit, so that the user can judge whether abnormal discharge or plasma is generated in the antenna housing space AK without setting a threshold.

[0072] However, it is preferable to set the threshold value for the control device 15 as in the first embodiment in order to control the plasma processing device 1 with high precision. Specifically, the optical sensor 14 may sometimes receive light (stray light) from the external environment. In addition, when fine damage such as cracks occurs in the antenna cover 5, the optical sensor 14 may sometimes receive stray light from the plasma generation area HA. ​​In view of such stray light, by appropriately setting the threshold value, the control unit 15a can eliminate the influence of such stray light as much as possible, thereby controlling the plasma processing device 1 with further good precision.

[0073] In addition, in the plasma processing apparatus 1 of the present embodiment 1, the antenna cover 5 separates the plasma generating area HA from the plasma non-generating area (antenna housing space AK). Thus, in the present embodiment 1, even if the antenna 8 is damaged due to the generation of abnormal discharge or plasma, and contaminants such as particles are generated in the antenna housing space AK, the antenna cover 5 can greatly suppress the intrusion of the contaminants into the plasma generating area HA side, thereby minimizing the possibility of quality degradation of the substrate H1 to be processed due to the contaminants.

[0074] In the first embodiment, since the vacuum cover 4 and the antenna cover 5 are provided for each antenna 8, installation work, replacement work, and maintenance work can be performed for each antenna 8. As a result, in the first embodiment, a plasma processing apparatus 1 with excellent operability and easy handling can be simply configured.

[0075] In addition, in the present embodiment 1, unlike the above-mentioned previous example using screw fastening, the antenna cover 5 can be installed inside the housing 2 without being screwed or the like. As a result, in the present embodiment 1, even when the inside of the plasma generation area HA (processing chamber) is placed in a vacuum environment with a predetermined vacuum degree, unlike the above-mentioned previous example, the possibility of cracking or deformation in the antenna cover 5 starting from the screwed portion can be greatly reduced.

[0076] [Implementation method 2]

[0077] use Figure 4 and Figure 5 Implementation Example 2 of the present disclosure will be described in detail. Figure 4 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a second embodiment of the present disclosure. Figure 5 yes Figure 4 For convenience of description, the same reference numerals are given to components having the same functions as those described in the first embodiment, and their description will not be repeated.

[0078] The main difference between this embodiment 2 and the embodiment 1 is that a straight portion 8a of the antenna 8 and three optical sensors 14A, 14B and 14C are provided, and the three optical sensors 14A, 14B and 14C respectively receive light emitted from a first bent portion 8b and a second bent portion 8c which are respectively continuously provided at one end and the other end of the straight portion 8a.

[0079] like Figure 4 and Figure 5 As shown, in the plasma processing apparatus 1 of the second embodiment, a portion of each of the four antennas 8 includes a linear straight portion 8a, and a first bent portion 8b and a second bent portion 8c which are respectively provided continuously at one end and the other end of the linear portion 8a. In addition, in the vacuum cover 4, a viewing port 4b, a viewing port 4c, and a viewing port 4d are provided corresponding to the central portion of the linear portion 8a, the first bent portion 8b, and the second bent portion 8c, respectively.

[0080] In the plasma processing apparatus 1 of the second embodiment, the optical sensor 14A, the optical sensor 14B, and the optical sensor 14C are mounted on the viewing port 4b, the viewing port 4c, and the viewing port 4d, respectively. The optical sensor 14A, the optical sensor 14B, and the optical sensor 14C receive light from the central portion, the first bent portion 8b, and the second bent portion 8c, respectively, at the linear portion 8a.

[0081] Specifically, the optical sensor 14A receives light from the center of the linear portion 8a of the antenna 8 and its surroundings. In addition, the optical sensor 14B receives light from one end of the antenna 8 and the first bent portion 8b where the linear portion 8a is bent toward the vacuum cover 4 and its surroundings. In addition, the optical sensor 14C receives light from the other end of the antenna 8 and the second bent portion 8c where the linear portion 8a is bent toward the vacuum cover 4 and its surroundings.

[0082] Furthermore, the plasma processing apparatus 1 of the second embodiment further includes a support platform 16 that supports the antenna cover 5 in a detachable manner. In addition, in the plasma processing apparatus 1 of the second embodiment, the antenna cover 5 can be detached from the support platform 16 through the first opening 2b and taken out to the outside of the housing 2. Thus, in the second embodiment, the antenna 8 and the vacuum cover 4 can be detached from the housing 2 together with the antenna cover 5. As a result, in the second embodiment, the maintainability of the plasma processing apparatus 1 can be further improved.

[0083] With the above configuration, the plasma processing apparatus 1 of the second embodiment achieves the same effects as those of the first embodiment.

[0084] In addition, in the plasma processing apparatus 1 of the second embodiment, the optical sensor 14B and the optical sensor 14C receive light emitted from the first bent portion 8b and the second bent portion 8c, respectively, so the optical sensor 14B and the optical sensor 14C can receive light from the edge where the electric field is easily concentrated in the antenna 8. Therefore, in the second embodiment, the antenna 8 and the surrounding state can be confirmed more reliably. As a result, in the second embodiment, the generation of abnormal discharge or the generation of plasma in the antenna housing space AK can be detected more reliably, so that the plasma processing apparatus 1 can reliably perform more appropriate operations.

[0085] Furthermore, in the above description, the case where three optical sensors 14A, 14B, and 14C are provided to receive light generated from the central portion of the straight portion 8a, the first bent portion 8b, and the second bent portion 8c of the antenna 8, respectively, is described. However, the present disclosure is not limited to this, and the optical sensor 14 only needs to receive light emitted from at least one of the central portion of the straight portion 8a, the first bent portion 8b, and the second bent portion 8c.

[0086] In addition, in the third embodiment, the support height of the antenna cover 5 can be partially adjusted with respect to the support table 16, and the antenna 8 can be mounted on the vacuum cover 4 in accordance with the adjusted support table 16. Thus, in the third embodiment, the height of the antenna 8 relative to the antenna cover 5 and the substrate H1 to be processed and the inclination in the long side direction can be easily adjusted. As a result, in the third embodiment, a plasma processing apparatus 1 capable of performing high-precision plasma processing can be easily configured.

[0087] [Variant 1]

[0088] use Figure 6 Modification 1 of the present disclosure will be described in detail. Figure 6 This is a diagram for explaining specific wiring of antennas 81 to 84 in plasma processing apparatus 1 of Modification 1. For convenience of description, members having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and their description will not be repeated.

[0089] The main difference between this modification example 1 and the above-described embodiment 1 is that two power supplies 9A and 9B are used to operate four antennas 81 , 82 , 83 , and 84 .

[0090] like Figure 6As shown, in the plasma processing apparatus 1 of this modification example 1, one end of each of the two antennas 81 and 82 is connected in parallel to the power supply 9A via the impedance adjustment section 10A. The other ends of the antenna 81 and the antenna 82 are connected to the impedance adjustment section 11A and the impedance adjustment section 11B, respectively. One end of each of the two antennas 83 and 84 is connected in parallel to the power supply 9B via the impedance adjustment section 10B. The other ends of the antenna 83 and the antenna 84 are connected to the impedance adjustment section 11C and the impedance adjustment section 11D, respectively. Moreover, in the plasma processing apparatus 1 of this modification example 1, the control section 15a controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment section 11A to the impedance adjustment section 11D, high-frequency power is efficiently supplied to the antennas 81 to 84.

[0091] With the above configuration, the plasma processing apparatus 1 according to the first modification can achieve the same effects as those of the plasma processing apparatus 1 according to the first embodiment.

[0092] [Variant 2]

[0093] use Figure 7 Modification 2 of the present disclosure will be described in detail. Figure 7 This is a diagram for explaining specific wiring of antennas 81 to 84 in plasma processing apparatus 1 according to Modification 2. For convenience of description, members having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and description thereof will not be repeated.

[0094] The main difference between this modification example 2 and the above-described embodiment 1 is that four antennas 81 , 82 , 83 , and 84 are operated using two power supplies 9A and 9B and impedance adjusters 11E and 11D.

[0095] like Figure 7 As shown, in the plasma processing apparatus 1 of the present modification example 2, one end of the antenna 81 is connected to the power supply 9A via the impedance adjustment section 10A. One end of the antenna 82 is connected to the other end of the antenna 81 via the impedance adjustment section 11E. The other end of the antenna 82 is grounded. One end of the antenna 83 is connected to the power supply 9B via the impedance adjustment section 10B. One end of the antenna 84 is connected to the other end of the antenna 83 via the impedance adjustment section 11F. The other end of the antenna 84 is grounded. Moreover, in the plasma processing apparatus 1 of the present modification example 2, the control section 15a controls in such a manner that high-frequency power is efficiently supplied to the antennas 81 to 84 by changing the capacitance of each variable capacitor of the impedance adjustment section 11E and the impedance adjustment section 11F.

[0096] With the above configuration, the plasma processing apparatus 1 according to the second modification can achieve the same effects as those of the plasma processing apparatus 1 according to the first embodiment.

[0097] [Variant 3]

[0098] use Figure 8 Modification 3 of the present disclosure will be described in detail. Figure 8 This is a diagram for explaining specific wiring of antennas 81 to 84 in plasma processing apparatus 1 according to Modification 3. For convenience of description, members having the same functions as those described in Embodiment 1 are denoted by the same reference numerals, and description thereof will not be repeated.

[0099] The main difference between the third modification and the first embodiment is that the four antennas 81 , 82 , 83 , and 84 are operated using the power supply 9 , the impedance adjuster 11G, the impedance adjuster 11H, and the like.

[0100] like Figure 8 As shown, in the plasma processing apparatus 1 of the present modification example 3, one end of the antenna 81 is connected to the power supply 9 via the impedance adjustment unit 10. One end of the antenna 82 is connected to the other end of the antenna 81 via the impedance adjustment unit 11G. The other end of the antenna 82 is grounded. One end of the antenna 83 is connected to the impedance adjustment unit 10. One end of the antenna 84 is connected to the other end of the antenna 83 via the impedance adjustment unit 11H. The other end of the antenna 84 is grounded. Moreover, in the plasma processing apparatus 1 of the present modification example 3, the control unit 15a controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment unit 11G and the impedance adjustment unit 11H, high-frequency power is efficiently supplied to the antennas 81 to 84.

[0101] With the above configuration, the plasma processing apparatus 1 according to the third modification can achieve the same effects as those of the plasma processing apparatus 1 according to the first embodiment.

[0102] 〔Summarize〕

[0103] In order to solve the above-mentioned problems, a first form of plasma processing device disclosed herein includes a processing chamber, wherein the plasma processing device includes: a shell having an opening portion connecting the processing chamber with an external environment; an outer cover installed on the opening portion in a detachable manner and closing the opening portion; an inner cover supported inside the opening portion and having dielectric properties; an antenna arranged in an enclosed space formed by at least the outer cover and the inner cover, and used to generate inductively coupled plasma; a light transmitting portion, which is arranged on the outer cover and has light transmittance; and a light receiving element, which receives light in the enclosed space that has passed through the light transmitting portion.

[0104] With the above configuration, it is possible to provide a plasma processing apparatus that can check the state of the antenna and its surroundings even when an inner cover is provided.

[0105] A second aspect of the present disclosure is the plasma processing apparatus of the first aspect, wherein a flange for detachably supporting the inner cover may be provided on the opening side of the housing.

[0106] With this structure, the inner cover can be easily installed on the housing.

[0107] The third form of the present disclosure is a plasma processing device such as the first form or the second form, wherein: a portion of the antenna includes a straight line portion, and a first bending portion and a second bending portion continuously arranged at one end and the other end of the straight line portion, respectively, and the light receiving element receives light emitted from at least one of the central portion of the straight line portion, the first bending portion and the second bending portion.

[0108] With the above structure, the status of the antenna and its surroundings can be confirmed more reliably.

[0109] The fourth form of the present disclosure, such as the plasma processing apparatus of any one of the first to third forms, may further include a control unit that uses the detection result of the light receiving element to perform a prescribed control process on the plasma processing of the object to be processed in the processing chamber.

[0110] With the above configuration, the control unit can appropriately operate the plasma processing apparatus based on the detection result of the light receiving element.

[0111] A fifth aspect of the present disclosure is the plasma processing apparatus of the fourth aspect, and further includes a power supply that supplies power to the antenna, and the control unit controls the power supply as the control process.

[0112] With the above configuration, the control unit can operate the antenna more appropriately, and can reliably suppress the generation of abnormal discharge or plasma in the surrounding space, thereby more reliably suppressing the generation of damage to the antenna.

[0113] A sixth aspect of the present disclosure is the plasma processing apparatus of the fourth aspect or the fifth aspect, wherein the control unit stops the power supply when detecting that the output value of the light receiving element is greater than a predetermined threshold value.

[0114] With the above configuration, the control unit can more appropriately control the power supply, and can more reliably suppress abnormal discharge or generation of plasma in the surrounding space, thereby allowing the plasma processing apparatus to operate more appropriately.

[0115] The seventh form of the present disclosure, such as the plasma processing device of the fifth form or the sixth form, may be: including a plurality of the light receiving elements respectively arranged on the plurality of the antennas, and the control unit stops the power supply when it detects that the output value of any one of the plurality of light receiving elements is above the threshold value.

[0116] With the above configuration, even when a plurality of antennas are provided, the control unit can more reliably suppress abnormal discharge or generation of plasma in each of the plurality of enclosed spaces, thereby enabling the plasma processing apparatus to reliably perform more appropriate operations.

[0117] The eighth form of the present disclosure is a plasma processing device such as any one of the first to seventh forms, and may include: a support table, which supports the inner cover in a detachable manner, and in the plasma processing device, the inner cover can be removed from the support table through the opening and taken out to the outside of the shell.

[0118] With the above structure, the antenna and the outer cover can be removed integrally from the housing and the inner cover, thereby further improving the maintainability of the plasma processing apparatus.

[0119] The present disclosure is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present disclosure.

[0120] Explanation of symbols

[0121] 1: Plasma treatment device

[0122] 2: Shell

[0123] 2b: First opening (opening)

[0124] 3: Flange

[0125] 4: Vacuum cover (outer cover)

[0126] 4b, 4c, 4d: Viewport (light transmission part)

[0127] 5: Radome (inner cover)

[0128] 8, 81, 82, 83, 84: Antenna

[0129] 8a: Straight line portion

[0130] 8b: First bending portion

[0131] 8c: Second bending portion

[0132] 9, 9A, 9B: Power supply

[0133] 14, 14A, 14B, 14C: Optical sensor (light receiving element)

[0134] 15a: Control Unit

[0135] 16: Support table

[0136] H1: substrate to be processed (object to be processed)

[0137] AK: Antenna accommodation space (enclosed space)

[0138] HA: Plasma generation area (processing chamber)

Claims

1. A plasma processing device, characterized in that: The plasma processing device comprises a processing chamber, and the plasma processing device comprises: A housing having an opening for connecting the processing chamber to an external environment; an outer cover detachably mounted on the opening and closing the opening; An inner cover, supported inside the opening and having dielectric properties; An antenna is disposed in a space surrounded by at least the outer cover and the inner cover, and is used to generate inductively coupled plasma; a light-transmitting portion, which is disposed on the outer cover and has light-transmitting properties; and The light receiving element receives the light in the surrounding space that has passed through the light transmitting portion.

2. The plasma processing device according to claim 1, characterized in that: A flange that detachably supports the inner cover is provided on the opening side of the housing.

3. The plasma processing device according to claim 1, characterized in that: The part of the antenna includes a linear portion, and a first bent portion and a second bent portion which are respectively continuously provided at one end and the other end of the linear portion. The light receiving element receives light emitted from at least one of the central portion of the linear portion, the first bent portion, and the second bent portion.

4. The plasma processing device according to any one of claims 1 to 3, characterized in that: Also includes a control unit, The control unit performs a predetermined control process on the plasma process of the object to be processed in the process chamber using the detection result of the light receiving element.

5. The plasma processing device according to claim 4, characterized in that: Also includes a power supply, the power supply supplies power to the antenna, The control unit performs control of the power supply as the control process.

6. The plasma processing device according to claim 5, characterized in that: The control unit stops the power supply when detecting that the output value of the light receiving element is equal to or greater than a predetermined threshold value.

7. The plasma processing device according to claim 6, characterized in that: comprising a plurality of light receiving elements respectively disposed on a plurality of the antennas, The control unit stops the power supply when detecting that the output value of any one of the plurality of light receiving elements is equal to or greater than the threshold value.

8. The plasma processing device according to claim 4, characterized in that: It also includes a support platform, which supports the inner cover in a detachable manner. In the plasma processing apparatus, the inner cover can be detached from the support table through the opening and taken out to the outside of the housing.

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