Semiconductor light emitting device

Abstract

A semiconductor light emitting device 10 includes: a substrate 20 including a substrate front surface 21; an edge light-emitting element 30 mounted on the substrate front surface 21, the edge light-emitting element 30 including a first element end surface 33 facing a first direction intersecting a thickness direction perpendicular to the substrate front surface 21 and a second element end surface 34 facing a direction opposite to the first element end surface 33, the edge light-emitting element 30 is configured such that light is emitted from the first element end face 33 and the second element end face 34; a light receiving base (70) provided on the substrate front surface (21) and including a mounting surface (71) facing the second element end surface (34); and a light-receiving element (40) mounted on the mounting surface (71) and including a light-receiving part (43) provided on the light-receiving element front surface (41) and facing the second element end surface (34).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor light emitting device. Background Art

[0002] Conventionally, there is known a semiconductor light emitting device including a light emitting diode as a light source.

[0003] [Prior art literature]

[0004] [Patent Document]

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-41866 Summary of the invention

[0006] When LED elements are used, it is difficult to cope with the increase in the output of the light source. Therefore, for example, an edge-emitting laser element may be used instead of an LED element to cope with a higher output. In addition, semiconductor light-emitting devices increasingly adopt the following configuration: a light-receiving element that receives a portion of the light emitted from the LED element is installed, and the intensity of the light emitted from the LED element is controlled based on the amount of light received by the light-receiving element. When a laser element is used instead of an LED element for such a semiconductor light-emitting device, since the directional angle of the laser element is narrower than that of the LED element, it is difficult for the light-receiving element to receive a portion of the laser light emitted from the laser element.

[0007] According to one embodiment of the present disclosure, a semiconductor light-emitting device is provided, comprising: a substrate, including a front side of the substrate; an edge light-emitting element, mounted on the front side of the substrate, the edge light-emitting element comprising a first element end face facing a first direction intersecting a thickness direction perpendicular to the front side of the substrate and a second element end face facing a direction opposite to the first element end face, the edge light-emitting element being configured so as to emit light from the first element end face and the second element end face; a light receiving base, disposed on the front side of the substrate and comprising a mounting surface facing the second element end face; and a light receiving element, mounted on the mounting surface and comprising a light receiving portion disposed on the front side of the light receiving element and facing the second element end face. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure.

[0009] Figure 1 is a schematic plan view of a semiconductor light emitting device according to a first embodiment.

[0010] Figure 2 is along Figure 1 Schematic cross-sectional view of a semiconductor light emitting device taken along line 2-2 in FIG.

[0011] Figure 3 yes Figure 1A schematic rear view of the semiconductor light emitting device shown.

[0012] Figure 4 is along Figure 2 Schematic cross-sectional view of a semiconductor light emitting device taken along line 4-4 in FIG.

[0013] Figure 5 is a schematic plan view of a semiconductor light emitting device according to a second embodiment.

[0014] Figure 6 is along Figure 5 Schematic cross-sectional view of the semiconductor light emitting device taken along line 6-6 in FIG.

[0015] Figure 7 is a schematic plan view of a semiconductor light emitting device according to a third embodiment.

[0016] Figure 8 is along Figure 7 Schematic cross-sectional view of the semiconductor light emitting device taken along line 8-8 in FIG.

[0017] Fig. 9 yes Figure 7 A schematic rear view of the semiconductor light emitting device shown.

[0018] Fig.10 is along Figure 7 Schematic cross-sectional view of a semiconductor light emitting device taken along line 10-10 in FIG.

[0019] Fig.11 is a schematic plan view of a semiconductor light emitting device according to a fourth embodiment.

[0020] Fig.12 is along Fig.11 Schematic cross-sectional view of a semiconductor light emitting device taken along line 12-12 in FIG.

[0021] Fig.13 is a schematic plan view of a semiconductor light emitting device according to a fifth embodiment.

[0022] Fig.14 is along Fig.13 Schematic cross-sectional view of the semiconductor light emitting device taken along line 14-14 in FIG.

[0023] Fig.15 yes Fig.13 A schematic rear view of the semiconductor light emitting device shown.

[0024] Fig.16 is a schematic plan view of a semiconductor light emitting device according to a sixth embodiment.

[0025] Fig.17 is along Fig.16Schematic cross-sectional view of the semiconductor light emitting device taken along line 17-17 in FIG.

[0026] Fig.18 is a schematic cross-sectional view of a semiconductor light emitting device according to a seventh embodiment.

[0027] Fig.19 is along Fig.18 Schematic cross-sectional view of the semiconductor light emitting device taken along line 19-19 in FIG.

[0028] Fig. 20 is a schematic cross-sectional view of a semiconductor light emitting device according to an eighth embodiment.

[0029] Fig.21 is along Fig. 20 Schematic cross-sectional view of the semiconductor light emitting device taken along line 21-21 in FIG.

[0030] Fig. 22 is a schematic cross-sectional view of a semiconductor light emitting device according to a ninth embodiment.

[0031] Fig.23 is along Fig. 22 Schematic cross-sectional view of the semiconductor light emitting device taken along line 23-23 in FIG.

[0032] Fig.24 is a schematic cross-sectional view of a semiconductor light emitting device according to a modification.

[0033] Fig.25 is a schematic cross-sectional view of a semiconductor light emitting device according to a modification.

[0034] Fig.26 is a schematic plan view of a semiconductor light emitting device according to a modification.

[0035] Fig. 27 is along Fig.26 Schematic cross-sectional view of the semiconductor light emitting device taken along line 27-27 in FIG.

[0036] Fig.28 is a schematic plan view of a semiconductor light emitting device according to a modification.

[0037] Fig.29 is along Fig.28 Schematic cross-sectional view of the semiconductor light emitting device taken along line 29-29 in FIG.

[0038] Fig.30 is a schematic plan view of a semiconductor light emitting device according to a modification.

[0039] Fig.31 is along Fig.30 Schematic cross-sectional view of the semiconductor light emitting device taken along line 31-31 in FIG.

[0040] Fig.32 is a schematic plan view of a semiconductor light emitting device according to a modification.

[0041] Fig.33 is along Fig.32 Schematic cross-sectional view of the semiconductor light emitting device taken along line 33-33 in FIG.

[0042] Fig.34 is a schematic cross-sectional view of a semiconductor light emitting device according to a modification.

[0043] Fig.35 is a schematic cross-sectional view of a semiconductor light emitting device according to a modification.

[0044] Fig.36 is a schematic plan view of a semiconductor light emitting device according to a tenth embodiment.

[0045] Fig.37 is along Fig.36 Schematic cross-sectional view of the semiconductor light emitting device taken along line 37-37 in FIG.

[0046] Fig.38 yes Fig.36 A schematic rear view of the semiconductor light emitting device shown.

[0047] Fig.39 is a schematic plan view of a semiconductor light emitting device according to an eleventh embodiment.

[0048] Fig.40 is along Fig.39 Schematic cross-sectional view of a semiconductor light emitting device taken along line 40-40 in FIG.

[0049] Fig.41 yes Fig.39 A schematic rear view of the semiconductor light emitting device shown. DETAILED DESCRIPTION

[0050] Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other cases, well-known methods, procedures, systems, and components are not described in detail in order to avoid unnecessarily obscuring aspects of the various embodiments.

[0051] Hereinafter, some embodiments of the semiconductor light emitting device of the present disclosure will be described with reference to the accompanying drawings. For simplicity and clarity of description, the components shown in the accompanying drawings are not necessarily drawn at a constant scale. In addition, for ease of understanding, hatching may be omitted in the cross-sectional views. The accompanying drawings are only used to illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0052] The following detailed description includes devices, systems, and methods that embody exemplary embodiments of the present disclosure. The detailed description is exemplary in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0053] (First embodiment)

[0054] Reference Figures 1 to 4 A semiconductor light emitting device 10 according to a first embodiment is described. Figure 1 is a schematic plan view of a semiconductor light emitting device 10 according to the first embodiment. Figure 2 is along Figure 1 Schematic cross-sectional view of the semiconductor light emitting device 10 taken along line 2-2 in FIG. Figure 3 yes Figure 1 A schematic rear view of a semiconductor light emitting device 10 is shown. Figure 4 is along Figure 2 4-4 in FIG. 1 . The term "plan view" used in the present disclosure refers to, for example, a plan view taken along Figure 1 The object is viewed in the Z direction of the mutually orthogonal XYZ axes shown.

[0055] (Schematic Structure of Semiconductor Light Emitting Device)

[0056] like Figure 1 and Figure 2 As shown, the semiconductor light emitting device 10 includes a substrate 20, an edge light emitting element 30 disposed on the substrate 20, and a light receiving element 40 disposed on the substrate 20. The semiconductor light emitting device 10 includes a light receiving sub-mount 70 on which the light receiving element 40 is mounted. The semiconductor light emitting device 10 may include a light emitting sub-mount 60 on which the edge light emitting element 30 is mounted. In addition, the semiconductor light emitting device 10 may include a cover member 80 that accommodates at least a portion of the edge light emitting element 30 and at least a portion of the light receiving element 40.

[0057] (Substrate)

[0058] The substrate 20 is a member that supports the edge light emitting element 30 and the light receiving element 40. The substrate 20 is formed in a rectangular flat plate shape in which the Z direction is a thickness direction thereof.

[0059] The substrate 20 is formed in a rectangular shape, and its length in the Y direction is shorter than its length in the X direction when viewed from above. The substrate 20 includes a substrate front face 21, a substrate back face 22 opposite to the substrate front face 21 in the Z direction, and a first substrate side face 23 to a fourth substrate side face 26 connecting the substrate front face 21 and the substrate back face 22. The first substrate side face 23 and the second substrate side face 24 constitute two end faces of the substrate 20 in the X direction, and the third substrate side face 25 and the fourth substrate side face 26 constitute two end faces of the substrate 20 in the Y direction. The shape of the substrate 20 when viewed from above can be arbitrarily changed.

[0060] The substrate 20 is formed of, for example, an insulating material. The substrate 20 may be formed of, for example, a resin material including epoxy resin. The resin material may contain fillers such as glass or ceramics. In addition, the substrate 20 may be formed of, for example, a material including ceramics. Examples of materials including ceramics include aluminum nitride (AlN) and aluminum oxide (Al2O3). The substrate 20 formed of a material including ceramics has high heat dissipation performance and can suppress the temperature of the semiconductor light emitting device 10 from becoming too high.

[0061] (Front electrode and back electrode)

[0062] like Figure 1 , 2 As shown in FIGS. 4 and 5 , the semiconductor light emitting device 10 includes first to fourth front electrodes 51S to 54S disposed above the substrate front surface 21. The first to fourth front electrodes 51S to 54S are formed of a material appropriately selected from, for example, one or more of Ti (titanium), TiN (titanium nitride), Au (gold), Ag (silver), Cu (copper), Al (aluminum), and W (tungsten).

[0063] like Figure 1 As shown, when viewed from above, the first front electrode 51S is arranged closer to the first substrate side 23 than the center of the substrate front surface 21 in the X direction. In addition, the first front electrode 51S is arranged closer to the third substrate side 25 than the center of the substrate front surface 21 in the Y direction. In one example, the first front electrode 51S is formed in a rectangular shape, and its length along the Y direction is longer than its length along the X direction when viewed from above. The setting position and shape of the first front electrode 51S on the substrate front surface 21 can be arbitrarily changed.

[0064] The second front electrode 52S is spaced apart from the first front electrode 51S. When viewed from above, the second front electrode 52S is spaced apart from the first front electrode 51S in the Y direction. When viewed from above, the second front electrode 52S is arranged closer to the first substrate side 23 than the center of the substrate front 21 in the X direction. In addition, the second front electrode 52S is arranged closer to the fourth substrate side 26 than the center of the substrate front 21 in the Y direction. It can be said that the second front electrode 52S is arranged between the first front electrode 51S and the fourth substrate side 26. In one example, the second front electrode 52S is formed in a rectangular shape, and its length along the Y direction is shorter than its length along the X direction when viewed from above. The setting position and shape of the second front electrode 52S on the substrate front 21 can be arbitrarily changed.

[0065] The third front electrode 53S is spaced apart from the first front electrode 51S. When viewed from above, the third front electrode 53S is spaced apart from the first front electrode 51S in the X direction. When viewed from above, the third front electrode 53S is arranged closer to the second substrate side 24 than the center of the substrate front 21 in the X direction. In addition, the third front electrode 53S is arranged closer to the third substrate side 25 than the center of the substrate front 21 in the Y direction. In one example, the third front electrode 53S is formed in a rectangular shape, and its length in the Y direction is shorter than its length in the X direction when viewed from above. The setting position and shape of the third front electrode 53S on the substrate front 21 can be arbitrarily changed.

[0066] The fourth front electrode 54S is spaced apart from the third front electrode 53S. When viewed from above, the fourth front electrode 54S is spaced apart from the third front electrode 53S in the Y direction. When viewed from above, the fourth front electrode 54S is arranged closer to the second substrate side 24 than the center of the substrate front 21 in the X direction. In addition, the fourth front electrode 54S is arranged closer to the fourth substrate side 26 than the center of the substrate front 21 in the Y direction. It can be said that the fourth front electrode 54S is arranged between the third front electrode 53S and the fourth substrate side 26. In one example, the fourth front electrode 54S is formed in a rectangular shape, and its length in the Y direction is shorter than its length in the X direction when viewed from above. The setting position and shape of the fourth front electrode 54S on the substrate front 21 can be arbitrarily changed.

[0067] like Figures 2 to 4 As shown, the semiconductor light emitting device 10 includes first to fourth back electrodes 51R to 54R provided on the substrate back surface 22. The first to fourth back electrodes 51R to 54R are formed of a material appropriately selected from one or more of Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0068] like Figure 3As shown, in a plan view, the first back electrode 51R is disposed closer to the first substrate side 23 than the center of the substrate back surface 22 in the X direction. In addition, the first back electrode 51R is disposed closer to the third substrate side 25 than the center of the substrate back surface 22 in the Y direction. In one example, the first back electrode 51R is formed in a rectangular shape, and its length in the Y direction is longer than its length in the X direction in a plan view. In one example, the first back electrode 51R is formed to have a Figure 1 The first front electrode 51S shown has the same size as the first front electrode 51S. The arrangement position and shape of the first rear electrode 51R on the rear surface 22 of the substrate can be arbitrarily changed.

[0069] The second back electrode 52R is spaced apart from the first back electrode 51R. When viewed from above, the second back electrode 52R is spaced apart from the first back electrode 51R in the Y direction. When viewed from above, the second back electrode 52R is disposed closer to the first substrate side 23 than the center of the substrate back surface 22 in the X direction. In addition, the second back electrode 52R is disposed closer to the fourth substrate side 26 than the center of the substrate back surface 22 in the Y direction. In one example, the second back electrode 52R is formed in a rectangular shape, and its length in the Y direction is shorter than its length in the X direction when viewed from above. In one example, the second back electrode 52R is formed to have a shape similar to Figure 1 The second front electrode 52S shown has the same size as the second front electrode 52S. The arrangement position and shape of the second back electrode 52R on the back surface 22 of the substrate can be arbitrarily changed.

[0070] The third back electrode 53R is spaced apart from the first back electrode 51R. When viewed from above, the third back electrode 53R is spaced apart from the first back electrode 51R in the X direction. When viewed from above, the third back electrode 53R is disposed closer to the second substrate side 24 than the center of the substrate back surface 22 in the X direction. In addition, the third back electrode 53R is disposed closer to the third substrate side 25 than the center of the substrate back surface 22 in the Y direction. In one example, the third back electrode 53R is formed in a rectangular shape, and its length in the Y direction is shorter than its length in the X direction when viewed from above. In one example, the third back electrode 53R is formed to have a shape similar to Figure 1 The third front electrode 53S shown has the same size as the third front electrode 53S. The arrangement position and shape of the third rear electrode 53R on the rear surface 22 of the substrate can be arbitrarily changed.

[0071] The fourth back electrode 54R is spaced apart from the third back electrode 53R. When viewed from above, the fourth back electrode 54R is spaced apart from the third back electrode 53R in the Y direction. When viewed from above, the fourth back electrode 54R is disposed closer to the second substrate side 24 than the center of the substrate back surface 22 in the X direction. In addition, the fourth back electrode 54R is disposed closer to the fourth substrate side 26 than the center of the substrate back surface 22 in the Y direction. In one example, the fourth back electrode 54R is formed in a rectangular shape, and its length in the Y direction is shorter than its length in the X direction when viewed from above. In one example, the fourth back electrode 54R is formed to have a shape similar to Figure 1 The fourth front electrode 54S shown has the same size as the fourth front electrode 54S. The arrangement position and shape of the fourth rear electrode 54R on the rear surface 22 of the substrate can be arbitrarily changed.

[0072] like Figures 1 to 3 As shown, the semiconductor light emitting device 10 includes first through holes 51V to fourth through holes 54V disposed in the substrate 20. Figure 1 and Figure 3 , the first through holes 51V to the fourth through holes 54V are indicated by dotted lines. The first through holes 51V to the fourth through holes 54V may be formed of a material appropriately selected from one or more of Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0073] The first through hole 51V to the fourth through hole 54V penetrate the substrate 20 in the Z direction. The first through hole 51V electrically connects the first front electrode 51S and the first back electrode 51R. The second through hole 52V electrically connects the second front electrode 52S and the second back electrode 52R. The third through hole 53V electrically connects the third front electrode 53S and the third back electrode 53R. The fourth through hole 54V electrically connects the fourth front electrode 54S and the fourth back electrode 54R. The number of the first through hole 51V to the fourth through hole 54V can be changed as needed.

[0074] (Luminous base)

[0075] like Figure 1 and Figure 2 As shown, the light emitting base 60 is formed in a rectangular flat plate shape, and its thickness direction is the Z direction. The light emitting base 60 is formed of, for example, a conductive material. As the conductive material, for example, Cu, Al, etc. are used. In one example, the light emitting base 60 is formed of Cu.

[0076] The light emitting base 60 includes a base front face 61 and a base back face 62 facing opposite sides. The base front face 61 faces the same side as the substrate front face 21 of the substrate 20, and the base back face 62 faces the same side as the substrate back face 22 of the substrate 20.

[0077] The light emitting base 60 is electrically connected to the third front electrode 53S through a conductive adhesive material 91. The conductive adhesive material 91 is in contact with the base back surface 62. When viewed from above, the size of the light emitting base 60 along the X direction is smaller than the size of the third front electrode 53S along the X direction, and the size of the light emitting base 60 along the Y direction is smaller than the size of the third front electrode 53S along the Y direction. The conductive adhesive material 91 can be, for example, solder paste, silver paste, gold paste, copper paste, etc.

[0078] (Edge light element)

[0079] The edge light element 30 is spaced apart from the light receiving element 40 in the X direction. In one example, the edge light element 30 is disposed at a position overlapping the light receiving element 40 when viewed from the X direction. The edge light element 30 is disposed closer to the second substrate side surface 24 than the light receiving element 40.

[0080] The edge light emitting element 30 is a laser diode that emits a laser beam of a predetermined wavelength band, and is used as a light source of the semiconductor light emitting device 10. As the edge light emitting element 30, for example, an edge emitting laser (EEL: Edge Emitting Laser) is used. The wavelength band of the laser beam may be a visible light band, or may be a long wavelength band having a wavelength longer than visible light (for example, ultraviolet rays, etc.).

[0081] The edge light-emitting element 30 is formed in a rectangular shape. In one example, the edge light-emitting element 30 is formed in a rectangular shape, and when viewed from above, its length along the Y direction is shorter than its length along the X direction. The shape of the edge light-emitting element 30 when viewed from above can be changed arbitrarily. In one example, when viewed from above, the edge light-emitting element 30 can have a square shape. As used in this specification, the term "rectangular shape" includes a shape in which corners and ridges are chamfered, a shape in which corners and ridges are rounded, and a shape in which a recess is formed in part or all of the corners and ridges. In addition, an irregular shape can be formed on part or all of each face. In addition, in the case of a "rectangular shape", the faces facing opposite sides to each other do not necessarily have to be completely parallel and can be slightly tilted.

[0082] like Figure 1 and Figure 2As shown, the edge light-emitting element 30 includes a light-emitting element front face 31 and a light-emitting element back face 32 facing opposite sides to each other in the Z direction, a first element end face 33 and a second element end face 34 facing opposite sides to each other in the X direction, and element side faces 35 and 36 facing opposite sides to each other in the Y direction. The first element end face 33 and the second element end face 34 constituting the two end faces in the X direction are composed of flat surfaces orthogonal to the light-emitting element front face 31 (light-emitting element back face 32). The first element end face 33 and the second element end face 34 face opposite sides. The semiconductor light-emitting device 10 is configured to emit a first laser beam L1 from the first element end face 33 in the X direction, which is an example of a first direction (X direction) intersecting the Z direction when viewed from above. In addition, the semiconductor light-emitting device 10 is configured to emit a second laser beam L2 from the second element end face 34 in a direction opposite to the emission direction of the first laser beam L1.

[0083] The edge light emitting element 30 includes a first light emitting electrode 37 formed on the front surface 31 of the light emitting element and a second light emitting electrode 38 formed on the back surface 32 of the light emitting element. Figure 1 As shown, in a plan view, the first light emitting electrode 37 is formed approximately at the center of the front surface 31 of the light emitting element in the Y direction. The shape of the first light emitting electrode 37 in a plan view is a rectangle, wherein the length along the Y direction is shorter than the length along the X direction. Figure 2 As shown, for example, the second light emitting electrode 38 is formed to have the same length in the X direction as the light emitting element back surface 32. In one example, the first light emitting electrode 37 may form an anode, and the second light emitting electrode 38 may form a cathode. The first light emitting electrode 37 and the second light emitting electrode 38 may have a stacked structure of a plurality of conductive films.

[0084] The edge light emitting element 30 includes a semiconductor stack structure composed of a plurality of semiconductor layers including a light emitting layer. The light emitting layer is composed of, for example, one or more active layers. The light emitting layer extends in the X direction. The edge light emitting element 30 is configured to emit a laser beam generated from the light emitting layer by power supplied by the first light emitting electrode 37 and the second light emitting electrode 38 from the first element end face 33 and the second element end face 34. It can be said that the first element end face 33 and the second element end face 34 include emission areas 33A and 34A from which the laser beam is emitted. Figure 2 , the emission regions 33A and 34A of the first element end face 33 and the second element end face 34 are clearly shown. In one example, the emission regions 33A and 34A are located closer to the light emitting element front face 31 than the center in the thickness direction.

[0085] The edge light emitting element 30 is disposed on the light emitting base 60. The edge light emitting element 30 is bonded to the light emitting base 60 by a conductive bonding material 91. In one example, the edge light emitting element 30 is disposed so that the second light emitting electrode 38 faces the base front surface 61 of the light emitting base 60. The second light emitting electrode 38 of the edge light emitting element 30 is electrically connected to the light emitting base 60 by the conductive bonding material 91. The conductive bonding material 91 is in contact with the base front surface 61.

[0086] like Figure 1 As shown, the edge light-emitting element 30 is electrically connected to the fourth front electrode 54S. The first light-emitting electrode 37 of the edge light-emitting element 30 is electrically connected to the fourth front electrode 54S through a wire W1. The wire W1 corresponds to a "second wire". In one example, the first light-emitting electrode 37 may be electrically connected to the fourth front electrode 54S through a plurality of wires W1. In one example, a first end of the wire W1 is electrically connected to the first light-emitting electrode 37, and a second end of the wire W1 is electrically connected to the fourth front electrode 54S. The first end of the wire W1 may be electrically connected to the fourth front electrode 54S, and the second end of the wire may be electrically connected to the first light-emitting electrode 37. The wire W1 is, for example, a bonding wire formed by a wire bonding device, and is formed of a conductive material such as Au, Al, Cu, or the like.

[0087] (Light receiving base)

[0088] The semiconductor light emitting device 10 includes a light receiving base 70 disposed on the substrate front surface 21 of the substrate 20. In one example, the light receiving base 70 is disposed on the first front surface electrode 51S.

[0089] In one example, the light receiving base 70 is formed in a rectangular flat plate shape. When viewed from the Y direction, the light receiving base 70 is formed in a rectangular shape. In one example, when viewed from the Y direction, the light receiving base 70 is formed in a parallelogram shape.

[0090] The light receiving base 70 includes a mounting surface 71 and a mounting back surface 72 facing opposite sides to each other in the thickness direction of the light receiving base 70, a mounting surface 73 and an upper surface 74 facing opposite sides to each other in the Z direction, and side surfaces 75 and 76 facing opposite sides to each other in the Y direction. In one example, the mounting surface 71, the mounting back surface 72, the mounting surface 73, and the upper surface 74 are formed in a rectangular shape, and the side surfaces 75 and 76 are formed in a parallelogram shape. The light receiving base 70 is arranged so that the mounting surface 73 faces the substrate front surface 21 of the substrate 20.

[0091] like Figure 1As shown, the light receiving base 70 is arranged to cross the first front electrode 51S and the second front electrode 52S. The light receiving base 70 is arranged so that the mounting surface 71 faces the second element end surface 34 of the edge light emitting element 30. In one example, the light receiving base 70 is bonded to the first front electrode 51S and the second front electrode 52S by using an adhesive 92. In one example, the adhesive 92 may include an insulating resin material such as an epoxy resin.

[0092] like Figure 1 , Figure 2 and Figure 4 As shown, a first mounting electrode 77 and a second mounting electrode 78 are formed on the mounting surface 71. In one example, when viewed from a direction perpendicular to the mounting surface 71, the first mounting electrode 77 and the second mounting electrode 78 are formed in a rectangular shape. In one example, the first mounting electrode 77 and the second mounting electrode 78 are formed on the mounting surface 71 in a manner extending from an end portion on the mounting surface 73 side toward an end portion on the upper surface 74 side. The first mounting electrode 77 and the second mounting electrode 78 can be formed of a material containing one or more substances appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0093] The first mounting electrode 77 is electrically connected to the first front surface electrode 51S through the conductive adhesive material 93. The second mounting electrode 78 is electrically connected to the second front surface electrode 52S through the conductive adhesive material 93. The conductive adhesive material 93 may be, for example, a Pb-free solder such as a Sn (tin)-Ag-Cu based solder.

[0094] When viewed from the Y direction, the mounting surface 71 of the light receiving base 70 may extend in a direction intersecting the substrate front surface 21. An angle A1 of the mounting surface 71 relative to the substrate front surface 21 may be determined by an angle between the mounting surface 71 of the light receiving base 70 and a mounting surface 73 facing the substrate front surface 21. The angle A1 between the mounting surface 71 and the mounting surface 73 may be referred to as an inclination angle A1 of the mounting surface 71. The inclination angle A1 may be greater than or equal to 60 degrees and less than or equal to 90 degrees.

[0095] The light receiving base 70 of the first embodiment is formed so that in the X direction, as the mounting surface 71 extends away from the substrate front surface 21, it extends away from the second element end surface 34. The tilt angle A1 of the light receiving base 70 of the first embodiment may be 60 degrees or more and less than 90 degrees.

[0096] (Light receiving element)

[0097] like Figure 1 , Figure 2 and Figure 4 As shown, the light receiving element 40 is mounted on the light receiving base 70. The light receiving element 40 is mounted on the mounting surface 71 of the light receiving base 70.

[0098] like Figure 1 and Figure 2 As shown, the light receiving element 40 is formed in a rectangular flat plate shape. The light receiving element 40 includes a light receiving element front surface 41 and a light receiving element back surface 42 facing opposite sides to each other in the thickness direction thereof.

[0099] The light receiving element 40 is, for example, a photodiode (PD). The light receiving element 40 includes a light receiving portion 43. The light receiving portion 43 is formed on the light receiving element front surface 41. The formation range of the light receiving portion 43 is, for example, defined by a p-type well region formed in an n-type semiconductor substrate provided at the light receiving element 40. The light receiving element 40 also includes a first light receiving electrode 44 and a second light receiving electrode 45. Figure 1 and Figure 2 As shown, the first light receiving electrode 44 is formed on the front surface 41 of the light receiving element. In addition, the second light receiving electrode 45 is formed on the back surface 42 of the light receiving element. The first light receiving electrode 44 constitutes one of the anode and the cathode of the photodiode, and the second light receiving electrode 45 constitutes the other of the anode and the cathode of the photodiode. In the first embodiment, the first light receiving electrode 44 constitutes the anode, and the second light receiving electrode 45 constitutes the cathode. The light receiving element 40 is configured so that, depending on the amount of light irradiated onto the light receiving portion 43, current flows from the first light receiving electrode 44 of the light receiving element 40 to the second light receiving electrode 45.

[0100] The light receiving element 40 is bonded to the first mounting electrode 77 provided on the mounting surface 71 of the light receiving base 70. The light receiving element 40 is provided so that the second light receiving electrode 45 faces the first mounting electrode 77. The second light receiving electrode 45 is electrically connected to the first mounting electrode 77 through the conductive bonding material 91.

[0101] The first light receiving electrode 44 of the light receiving element 40 is electrically connected to the second mounting electrode 78 through the wire W2. The wire W2 corresponds to the "first wire". In one example, the first end of the wire W2 is electrically connected to the first light receiving electrode 44, and the second end of the wire W2 is electrically connected to the second mounting electrode 78. The second end of the wire W2 can be electrically connected to the first light receiving electrode 44, and the first end of the wire W2 can be electrically connected to the second mounting electrode 78. The wire W2 is, for example, a bonding wire formed by a wire bonding device, and is formed of a conductive material such as Au, Al, Cu, etc.

[0102] The light receiving portion 43 of the light receiving element 40 mounted on the light receiving base 70 faces the same direction as the mounting surface 71 of the light receiving base 70. The mounting surface 71 faces the second element end surface 34 of the edge light emitting element 30. Therefore, the light receiving portion 43 of the light receiving element 40 faces the second element end surface 34 of the edge light emitting element 30. The mounting surface 71 of the light receiving base 70 is formed to extend away from the second element end surface 34 in the Z direction as it extends away from the substrate front surface 21. Therefore, it can be said that the light receiving element 40 is arranged so that in the Z direction, as the light receiving element front surface 41 extends away from the substrate front surface 21, it extends away from the second element end surface 34.

[0103] The light receiving base 70 is arranged so that the light receiving element front face 41 of the light receiving element 40 mounted on the light receiving base 70 is spaced apart from the second element end face 34 of the edge light emitting element 30 in the X direction. The distance D1 between the second element end face 34 of the edge light emitting element 30 and the light receiving element front face 41 of the light receiving element 40 is preferably 0.5 mm or more and 2.6 mm or less. The distance D1 may be the distance in the X direction between a position on the light receiving element front face 41 of the light receiving element 40 that is located at the same position as the emission region 34A of the second element end face 34 in the Z direction and the second element end face 34 of the edge light emitting element 30.

[0104] (Cover member)

[0105] like Figure 1 , Figure 2 and Figure 4 As shown, the semiconductor light emitting device 10 includes a cover member 80. The cover member 80 accommodates at least a portion of the edge light emitting element 30 and at least a portion of the light receiving element 40. Figure 2 The illustrated cover member 80 accommodates the entire edge light emitting element 30 and the entire light receiving element 40 .

[0106] The cover member 80 is provided on the substrate 20. The cover member is mounted on the substrate front surface 21 of the substrate 20 by, for example, an adhesive. The semiconductor light emitting device 10 includes a sealed space 88 formed between the inner surface of the cover member and the substrate front surface 21 of the substrate 20. It can be said that the edge light emitting element 30 and the light receiving element 40 are provided in the sealed space 88.

[0107] The cover member 80 is formed in a box shape that opens toward the substrate 20. The cover member 80 includes a main body 81. The main body 81 includes an opening 82 through which a laser beam emitted from the first element end face 33 of the edge light emitting element 30 passes. The main body 81 includes side walls 83 and 84 extending along the third substrate side 25 and the fourth substrate side 26 of the substrate 20, a side wall 85 extending along the first substrate side 23 of the substrate 20, and an upper wall 86 covering the edge light emitting element 30 and the light receiving element 40 in the Z direction. The side walls 83, 84, and 85 are formed in a flat plate shape in a manner extending along the substrate sides 25, 26, and 23. The upper wall 86 is formed in a flat plate shape orthogonal to the Z direction.

[0108] The cover member 80 may include a window member 87 closing the opening 82 of the body 81. The window member 87 is formed to extend along the substrate side surface 24 of the substrate 20. The window member 87 is formed in a flat plate shape extending along the substrate side surface 24.

[0109] The body 81 may be formed of a material that is transparent to the laser beam emitted from the edge light emitting element 30. The body 81 may be formed of a glass material or a resin material such as silicone resin, epoxy resin, acrylic resin, etc. The body 81 may be formed of a material that blocks the laser beam emitted from the edge light emitting element 30. The body 81 may be formed of a metal material or a material containing ceramics.

[0110] The window member 87 may be formed of a material that is transparent to the laser beam emitted from the edge light emitting element 30. The body 81 may be formed of a glass material or a resin material such as a silicone resin, an epoxy resin, an acrylic resin, etc. The window member 87 may be omitted. By omitting the window member 87, a lens or the like for converging the first laser beam L1 emitted from the first element end face 33 may be provided close to the first element end face 33.

[0111] (operate)

[0112] The operation of the semiconductor light emitting device 10 of the first embodiment is described. The light output of the edge light emitting element 30 changes depending on the temperature, etc. In one example, the light output of the edge light emitting element 30 decreases as the temperature of the edge light emitting element 30 increases. A system using a laser beam is required to have a constant light output.

[0113] The output of the first laser beam L1 emitted from the first element end face 33 of the edge light emitting element 30 is correlated with the output of the second laser beam L2 emitted from the second element end face 34. The ratio of the light output of the first laser beam L1 to the light output of the second laser beam L2 can be set to, for example, 9:1. Therefore, in the semiconductor light emitting device 10, the second laser beam L2 emitted from the second element end face 34 of the edge light emitting element 30 is received by the light receiving element 40, and the so-called APC (automatic power control) drive is performed, in which the drive current of the edge light emitting element 30 is controlled to keep the output current of the light receiving element 40 constant, that is, to keep the laser beam L2 constant. Therefore, the first laser beam L1 with a constant output can be obtained. It is also possible to grasp the output of the first laser beam L1 from the output signal of the light receiving element 40, and then control the drive current of the edge light emitting element 30 so that the output of the first laser beam L1 has a predetermined value.

[0114] The light receiving element 40 is mounted on a light receiving base 70 including a mounting surface 71 facing the second element end surface 34 of the edge light emitting element 30. Therefore, the light receiving element front surface 41 including the light receiving portion 43 of the light receiving element 40 faces the second element end surface 34 of the edge light emitting element 30. Therefore, the light receiving element 40 can directly receive the second laser beam L2 from the second element end surface 34 of the edge light emitting element 30. Therefore, in the semiconductor light emitting device 10 in which the edge light emitting element 30 and the light receiving element 40 are provided on the substrate front surface 21 of the substrate 20, the second laser beam L2 from the edge light emitting element 30 can be easily received by the light receiving portion 43 of the light receiving element 40.

[0115] The first laser beam L1 and the second laser beam L2 emitted from the edge light-emitting element 30 diffuse from the emission areas 33A and 34A. The light intensity of the first laser beam L1 decreases from the auxiliary straight line (the optical axis of the first laser beam L1) perpendicular to the first element end face 33 through the emission area 33A toward the periphery. In one example, at a position with an angle of 30 degrees relative to the optical axis, the amount of light becomes less than 1 / 10. The light intensity of the second laser beam L2 has the same distribution as the light intensity of the first laser beam. On the other hand, the distance D1 from the second element end face 34 of the edge light-emitting element 30 to the front face 41 of the light receiving element 40 is preferably greater than 0.5 mm and less than 2.6 mm. By setting such a distance D1, the second laser beam L2 of the edge light-emitting element 30 can be efficiently received without increasing the size of the light receiving element 40.

[0116] When the light receiving element 40 becomes larger, the height of the cover member 80 that accommodates the edge light emitting element 30 and the light receiving element 40 increases. In other words, the size of the light receiving element 40 affects the size of the semiconductor light emitting device 10 in the Z direction. Therefore, by arranging the light receiving element 40 at the distance D1 as described above, the size increase of the semiconductor light emitting device 10 can be suppressed.

[0117] The mounting surface 71 of the light receiving base 70 is formed to extend away from the second element end surface 34 in the Z direction as it extends away from the substrate front surface 21. The angle A1 of the mounting surface 71 relative to the substrate front surface 21 can also be determined by the angle A1 between the mounting surface 71 of the light receiving base 70 and the mounting surface 73 facing the substrate front surface 21. The angle A1 between the mounting surface 71 and the mounting surface 73 can be called the inclination angle A1 of the mounting surface 71. The inclination angle A1 can be greater than 60 degrees and less than 90 degrees.

[0118] The semiconductor light emitting device 10 includes a first back electrode 51R to a fourth back electrode 54R on the substrate back surface 22 of the substrate 20. The first back electrode 51R and the second back electrode 52R are electrically connected to the light receiving element 40. The third back electrode 53R and the fourth back electrode 54R are electrically connected to the edge light emitting element 30. Therefore, the semiconductor light emitting device 10 is mounted so that the substrate back surface 22 faces the substrate front surface, on which a drive circuit of the edge light emitting element 30 is formed, for example. In this way, the semiconductor light emitting device 10 is configured as a surface mount package structure.

[0119] The semiconductor light emitting device 10 includes an edge light emitting element 30 configured to emit a first laser beam L1 and a second laser beam L2, and a light receiving element 40 configured to receive the second laser beam L2 emitted from a second element end face 34 of the edge light emitting element 30. In one example, the output signal (output current) of the light receiving element 40 can be used for so-called APC driving. In addition, the output signal (output current) of the light receiving element 40 can be used to check the operation of the edge light emitting element 30.

[0120] The semiconductor light emitting device 10 may use a so-called APC drive, which controls the current supplied to the edge light emitting element 30 so that the light output of the first laser beam L1 and the second laser beam L2 of the edge light emitting element 30 is kept constant. More specifically, a controller disposed outside the semiconductor light emitting device 10 and configured to control the current supplied to the edge light emitting element 30 receives a signal corresponding to the second laser beam L2 of the edge light emitting element 30 received by the light receiving element 40. In one example, the signal of the light receiving element 40 is output to the controller via the third back electrode 53R. The controller receives the signal from the light receiving element 40 by being electrically connected to the third back electrode 53R. Then, the controller controls the current supplied to the edge light emitting element 30 according to the difference between the received signal and the output set value (i.e., the preset light output). In one example, the controller controls the current supplied to the edge light emitting element 30 so that the level of the received signal matches the output set value.

[0121] (Effect)

[0122] According to the semiconductor light emitting device 10 of the first embodiment, the following effects are obtained.

[0123] (1-1) The semiconductor light emitting device 10 includes: a substrate 20, including a substrate front side 21; an edge light emitting element 30, mounted on the substrate front side 21, the edge light emitting element 30 including a first element end face 33 facing in an X direction intersecting with a Z direction relative to the substrate front side 21 and a second element end face 34 facing in a direction opposite to the first element end face 33, the first element end face 33 and the second element end face 34 being configured to emit light; a light receiving base 70, disposed on the substrate front side 21 and including a mounting surface 71 facing the second element end face 34; and a light receiving element 40, mounted on the mounting surface 71 and including a light receiving portion 43 disposed on the light receiving element front side 41 in a manner facing the second element end face 34.

[0124] The light receiving element 40 of the semiconductor light emitting device 10 is mounted on a light receiving base 70 including a mounting surface 71 facing the second element end surface 34 of the edge light emitting element 30. Therefore, the light receiving element front surface 41 including the light receiving portion 43 of the light receiving element 40 faces the second element end surface 34 of the edge light emitting element 30. Therefore, the light receiving element 40 can directly receive the second laser beam L2 from the second element end surface 34 of the edge light emitting element 30. Therefore, in the semiconductor light emitting device 10 in which the edge light emitting element 30 and the light receiving element 40 are provided on the substrate front surface 21 of the substrate 20, the second laser beam L2 from the edge light emitting element 30 can be easily received by the light receiving portion 43 of the light receiving element 40.

[0125] (1-2) The light receiving base 70 includes a first mounting electrode 77 and a second mounting electrode 78. The light receiving element 40 is electrically connected to the first mounting electrode 77. The first light receiving electrode 44 of the light receiving element 40 is electrically connected to the second mounting electrode 78 through a wire W2. By mounting the light receiving element 40 on the light receiving base 70 in this manner, the light receiving base 70 and the light receiving element 40 can be easily mounted on the substrate 20.

[0126] (1-3) The mounting surface 71 of the light receiving base 70 is formed to extend away from the second element end surface 34 in the Z direction as the mounting surface 71 extends away from the substrate front surface 21. The angle A1 of the mounting surface 71 relative to the substrate front surface 21 can be determined by the angle A1 between the mounting surface 71 of the light receiving base 70 and the mounting surface 73 facing the substrate front surface 21. The angle A1 between the mounting surface 71 and the mounting surface 73 can be called the inclination angle A1 of the mounting surface 71. The inclination angle A1 can be greater than 60 degrees and less than 90 degrees. With this configuration, the light receiving element 40 can efficiently receive the second laser beam L2 from the edge light emitting element 30.

[0127] (1-4) The semiconductor light emitting device 10 includes the first front electrode 51S provided on the substrate front surface 21 of the substrate 20, and the light receiving base 70 is provided on the first front electrode 51S. With this configuration, the first mounting electrode 77 of the light receiving base 70 can be easily connected to the first front electrode 51S.

[0128] (1-5) The semiconductor light emitting device 10 includes a first front electrode 51S provided on the substrate front surface 21 of the substrate 20, and a second front electrode 52S provided to be spaced apart from the first front electrode 51S in the Y direction. The light receiving base 70 is provided to straddle the first front electrode 51S and the second front electrode 52S. With this configuration, the first mounting electrode 77 and the second mounting electrode 78 of the light receiving base 70 can be easily connected to the first front electrode 51S and the second front electrode 52S.

[0129] (1-6) The semiconductor light emitting device 10 includes a first front electrode 51S formed on the substrate front surface 21 of the substrate 20, and the light receiving base 70 is provided on the first front electrode 51S. With this configuration, the position of the light receiving base 70 can be easily changed. Therefore, the distance D1 between the light receiving element 40 mounted on the light receiving base 70 and the edge light emitting element 30 can be easily changed.

[0130] (1-7) The distance D1 from the second element end face 34 of the edge light emitting element 30 to the light receiving element front face 41 of the light receiving element 40 is preferably 0.5 mm or more and 2.6 mm or less. By setting such a distance D1, the second laser beam L2 of the edge light emitting element 30 can be efficiently received without increasing the size of the light receiving element 40.

[0131] (1-8) When the light receiving element 40 becomes larger, the height of the cover member 80 that accommodates the edge light emitting element 30 and the light receiving element 40 increases. In other words, the size of the light receiving element 40 affects the size of the semiconductor light emitting device 10 in the Z direction. The distance D1 from the second element end surface 34 of the edge light emitting element 30 to the light receiving element front surface 41 of the light receiving element 40 is preferably 0.5 mm or more and 2.6 mm or less. By arranging the light receiving element 40 at such a distance D1, the size increase of the semiconductor light emitting device 10 can be suppressed.

[0132] (1-9) The semiconductor light emitting device 10 includes a first back electrode 51R to a fourth back electrode 54R on the substrate back surface 22 of the substrate 20. The first back electrode 51R and the second back electrode 52R are electrically connected to the light receiving element 40. The third back electrode 53R and the fourth back electrode 54R are electrically connected to the edge light emitting element 30. Therefore, the semiconductor light emitting device 10 is installed so that the substrate back surface 22 faces the front side of the circuit board on which the drive circuit of the edge light emitting element 30 is formed, for example. In this way, the semiconductor light emitting device 10 is configured as a surface mount package structure. Therefore, the semiconductor light emitting device 10 can be easily installed.

[0133] (1-10) The light receiving base 70 includes the mounting back surface 72 facing the side opposite to the mounting surface 71 on which the light receiving element 40 is mounted. By placing the mounting back surface 72 on a workbench, the light receiving element 40 can be easily mounted on the mounting surface 71.

[0134] (Second embodiment)

[0135] Reference Figure 5 and 6 A semiconductor light emitting device 10A according to a second embodiment is described. The semiconductor light emitting device 10A of the second embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shape of a light receiving base 170. The points different from the semiconductor light emitting device 10 of the first embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0136] Figure 5 is a schematic plan view of a semiconductor light emitting device 10A according to a second embodiment. Figure 6 is along Figure 5 Schematic cross-sectional view of the semiconductor light emitting device 10A taken along line 6-6 in FIG. Figure 5 and Figure 6 As shown, the semiconductor light emitting device 10A includes a light receiving base 170 disposed on the substrate front surface 21 of the substrate 20. In one example, the light receiving base 170 is placed on the first front electrode 51S. In one example, the light receiving base 170 is disposed across the first front electrode 51S and the second front electrode 52S.

[0137] When viewed from the Y direction, the light receiving base 170 is formed in a triangular shape. The light receiving base 170 includes a mounting surface 73 facing the substrate front surface 21, a mounting surface 71 facing the second element end surface 34 of the edge light emitting element 30, a mounting back surface 72 facing the side opposite to the mounting surface 71, and side surfaces 75 and 76 facing opposite sides to each other in the Y direction. In one example, the mounting surface 71, the mounting back surface 72, and the mounting surface 73 are formed in a rectangular shape, and the side surfaces 75 and 76 are formed in a triangular shape. In one example, the side surfaces 75 and 76 are formed in a right triangle with one side of the mounting surface 71 as the hypotenuse.

[0138] (Effect)

[0139] According to the semiconductor light emitting device 10A of the second embodiment, the following effects are obtained.

[0140] (2-1) The same effects as the effects (1-1) to (1-9) of the semiconductor light emitting device 10 of the first embodiment are obtained.

[0141] (2-2) The light receiving base 170 is formed in a triangular shape when viewed from the Y direction. Therefore, the light receiving base 170 can be placed closer to the side wall 85 of the cover member 80.

[0142] (2-3) The side wall 85 of the cover member 80 can be brought close to the first front electrode 51S and the second front electrode 52S on which the light receiving base 170 is mounted. Therefore, the size of the semiconductor light emitting device 10A in the X direction can be reduced.

[0143] (Third Embodiment)

[0144] Reference Figures 7 to 10 A semiconductor light emitting device 10B according to a third embodiment is described. The semiconductor light emitting device 10B of the third embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shape of a light receiving base 270. The points different from the semiconductor light emitting device 10 of the first embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0145] Figure 7 is a schematic plan view of a semiconductor light emitting device 10B according to the third embodiment. Figure 8 is along Figure 7 Schematic cross-sectional view of the semiconductor light emitting device 10B taken along line 8 - 8 in FIG. Fig. 9 yes Figure 7 Schematic rear view of semiconductor light emitting device 10B is shown. Fig.10 is along Figure 7 Schematic cross-sectional view of a semiconductor light emitting device 10B taken along line 10 - 10 in FIG.

[0146] like Figure 7 As shown, the semiconductor light emitting device 10B includes a light receiving base 270 disposed on the substrate front surface 21 of the substrate 20. In one example, the light receiving base 270 is placed on the first front electrode 51S. In one example, the light receiving base 270 is disposed across the first front electrode 51S and the second front electrode 52S.

[0147] In one example, the light receiving base 270 is formed in a rectangular flat plate shape. When viewed from the Y direction, the light receiving base 270 is formed in a rectangular shape. In one example, when viewed from the Y direction, the light receiving base 270 is formed in a rectangular shape.

[0148] The light receiving base 270 includes a mounting surface 71 and a mounting back surface 72 facing opposite sides to each other in the thickness direction of the light receiving base 270, a mounting surface 73 and an upper surface 74 facing opposite sides to each other in the Z direction, and side surfaces 75 and 76 facing opposite sides to each other in the Y direction. In one example, the mounting surface 71, the mounting back surface 72, the mounting surface 73, the upper surface 74, and the side surfaces 75 and 76 are formed in a rectangular shape. The light receiving base 270 is formed in a rectangular parallelepiped shape. The light receiving base 270 is arranged so that the mounting surface 73 faces the substrate front surface 21 of the substrate 20.

[0149] The light receiving base 270 of the third embodiment is formed so that the mounting surface 71 is orthogonal to the substrate front surface 21. That is, in the light receiving base 270, the angle between the mounting surface 73 and the mounting surface 71 is 90 degrees.

[0150] According to the semiconductor light emitting device 10B of the third embodiment, the following effects are obtained.

[0151] (3-1) The same effects as those of the semiconductor light emitting device 10 of the first embodiment are obtained.

[0152] (3-2) The light receiving base 270 is formed in a rectangular shape when viewed from the Y direction. Therefore, the light receiving base 270 can be placed close to the side wall 85 of the cover member 80.

[0153] (3-3) The side wall 85 of the cover member 80 can be brought close to the first front electrode 51S and the second front electrode 52S on which the light receiving base 270 is mounted. Therefore, the size of the semiconductor light emitting device 10B in the X direction can be reduced.

[0154] (Fourth embodiment)

[0155] Reference Fig.11 and 12 A semiconductor light emitting device 10C according to a fourth embodiment is described. The semiconductor light emitting device 10C of the fourth embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shapes of the first front electrode 151S and the second front electrode 152S and the setting position of the light receiving base 70. The points different from the semiconductor light emitting device 10 of the first embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0156] Fig.11 is a schematic plan view of a semiconductor light emitting device 10C according to a fourth embodiment. Fig.12 is along Fig.11 Schematic cross-sectional view of the semiconductor light emitting device 10C taken along line 12-12 in FIG. Fig.11 and Fig.12 As shown, the semiconductor light emitting device 10C includes a light receiving base 70 disposed on the substrate front side 21 of the substrate 20. The light receiving base 70 of the fourth embodiment is disposed on the first front electrode 151S. The light receiving base 70 is disposed so that the mounting surface 73 faces the substrate front side 21 of the substrate 20. The light receiving base 70 is directly bonded to the substrate front side 21 of the substrate 20 by an adhesive 92. It can be said that the light receiving base 70 is disposed at a position that does not overlap with the first front side electrode 151S. That is, in the semiconductor light emitting device 10C of the fourth embodiment, the first front side electrode 151S is not interposed between the substrate 20 and the light receiving base 70.

[0157] The first front electrode 151S is disposed between the light receiving base 70 and the third front electrode 53S. The first front electrode 151S is formed in a rectangular shape, wherein its length in the Y direction is longer than its length in the X direction. The first front electrode 151S is arranged to overlap a portion of the first back electrode 51R disposed on the substrate back surface 22 of the substrate 20. The first back electrode 51R may be formed to have the same size as the first front electrode 151S when viewed from above.

[0158] The second front electrode 152S is spaced apart from the first front electrode 151S in the Y direction. It can be said that the second front electrode 152S is disposed between the light receiving base 70 and the fourth front electrode 54S. The second front electrode 152S is formed in a rectangular shape, wherein its length in the Y direction is longer than its length in the X direction. The second front electrode 152S is disposed to overlap a portion of the second back electrode 52R disposed on the substrate back surface 22 of the substrate 20. When viewed from above, the second back electrode 52R may be formed to have the same size as the second front electrode 152S.

[0159] The first mounting electrode 77 provided on the mounting surface 71 of the light receiving base 70 is electrically connected to the first front electrode 151S through the conductive adhesive 93. The second mounting electrode 78 provided on the mounting surface 71 of the light receiving base 70 is electrically connected to the second front electrode 152S through the conductive adhesive 93.

[0160] (Effect)

[0161] According to the semiconductor light emitting device 10C of the fourth embodiment, the following effects are obtained.

[0162] (4-1) The same effects as (1-1) to (1-3) and (1-7) to (1-10) in the semiconductor light emitting device 10 of the first embodiment are obtained.

[0163] (Fifth Embodiment)

[0164] Reference Figures 13 to 15 A semiconductor light emitting device 10D according to a fifth embodiment is described. The semiconductor light emitting device 10D of the fifth embodiment is different from the semiconductor light emitting device 10B of the third embodiment in that it includes a front common electrode 250S and a back common electrode 250R. The points different from the semiconductor light emitting device 10B of the third embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0165] Fig.13 is a schematic plan view of a semiconductor light emitting device 10D according to a fifth embodiment. Fig.14 is along Fig.13 Schematic cross-sectional view of a semiconductor light emitting device 10D taken along line 14 - 14 in FIG. Fig.15 yes Fig.13 Schematic rear view of a semiconductor light emitting device 10D is shown.

[0166] like Fig.13 and Fig.15As shown, the semiconductor light emitting device 10D includes a front common electrode 250S disposed on the substrate front surface 21 of the substrate 20 and a back common electrode 250R disposed on the substrate back surface 22 of the substrate 20. The front common electrode 250S is formed on the substrate front surface 21 in a manner extending in the X direction. The front common electrode 250S is disposed close to the third substrate side surface 25. The front common electrode 250S includes a first front electrode 51S and a third front electrode 53S. The back common electrode 250R is formed on the substrate back surface 22 in a manner extending in the X direction. The back common electrode 250R is disposed close to the third substrate side surface 25. The back common electrode 250R includes a first back electrode 51R and a third back electrode 53R.

[0167] The front common electrode 250S or the back common electrode 250R may be configured as a separate electrode. In one example, the semiconductor light emitting device 10D may include a front common electrode 250S, a first back electrode 51R, and a third back electrode 53R. In addition, the semiconductor light emitting device 10D may include a first front electrode 51S, a third front electrode 53S, and a back common electrode 250R. The common electrodes may be a second front electrode 52S and a fourth front electrode 54S, and a second back electrode 52R and a fourth back electrode 54R.

[0168] (Effect)

[0169] According to the semiconductor light emitting device 10D of the fifth embodiment, the following effects are obtained.

[0170] (5-1) The same effects as those of the semiconductor light emitting device 10B of the third embodiment are obtained.

[0171] (Sixth Embodiment)

[0172] Reference Fig.16 and 17 A semiconductor light emitting device 10E according to a sixth embodiment is described. The semiconductor light emitting device 10E of the sixth embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shapes of the substrate 120 and the light receiving base 370. The points different from the semiconductor light emitting device 10 of the first embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0173] Fig.16 is a schematic plan view of a semiconductor light emitting device 10E according to a sixth embodiment. Fig.17 is along Fig.16 Schematic cross-sectional view of the semiconductor light emitting device 10E taken along line 17-17 in FIG. Fig.16 and Fig.17As shown, the semiconductor light emitting device 10E includes a light receiving base 370 disposed on the substrate front surface 21 of the substrate 120. The light receiving base 370 of the sixth embodiment is formed integrally with the substrate 120. The light receiving base 370 and the substrate 120 are configured as an integral object connected to each other. It can be said that the substrate 120 of the sixth embodiment includes the light receiving base 370. In one example, the light receiving base 370 and the substrate 120 can be formed of a material containing ceramics or a resin material such as epoxy resin.

[0174] The semiconductor light emitting device 10E includes a first internal wiring 371 and a second internal wiring 372 provided inside the light receiving base 370 and the substrate 120. The first internal wiring 371 electrically connects the first mounting electrode 77 provided on the mounting surface 71 of the light receiving base 370 and the first back electrode 51R provided on the substrate back surface 22 of the substrate 120. The second internal wiring 372 electrically connects the second mounting electrode 78 provided on the mounting surface 71 of the light receiving base 370 and the second back electrode 52R provided on the substrate back surface 22 of the substrate 120.

[0175] (Effect)

[0176] According to the semiconductor light emitting device 10E of the sixth embodiment, the following effects are obtained.

[0177] (6-1) The same effects as (1-1) to (1-3) and (1-7) to (1-10) in the semiconductor light emitting device 10 of the first embodiment are obtained.

[0178] (6-2) The light receiving base 370 and the substrate 120 are configured as an integral body connected to each other. Therefore, it is possible to suppress the peeling of the light receiving base 370. In addition, it is possible to suppress the positional deviation of the edge light emitting element 30 provided on the substrate front surface 21 of the substrate 120 and the angle change of the mounting surface 71.

[0179] (6-3) The first mounting electrode 77 of the light receiving base 370 is electrically connected to the first back electrode 51R through the first internal wiring 371. The second mounting electrode 78 of the light receiving base 370 is electrically connected to the second back electrode 52R through the second internal wiring 372. Therefore, there is no need Figure 2 The adhesive 92 and the conductive adhesive material 93 are shown. In addition, the occurrence of connection failure due to deterioration of the adhesive 92 or the conductive adhesive material 93 can be suppressed.

[0180] (Seventh Embodiment)

[0181] Reference Fig.18 and 19The semiconductor light emitting device 10F of the seventh embodiment is described. The semiconductor light emitting device 10F of the seventh embodiment is different from the semiconductor light emitting device 10B of the third embodiment in the configuration of the light receiving base 470. The points different from the semiconductor light emitting device 10B of the third embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0182] Fig.18 is a schematic cross-sectional view of a semiconductor light emitting device 10F according to a seventh embodiment. Fig.19 is along Fig.18 Schematic cross-sectional view of the semiconductor light emitting device 10F taken along line 19-19 in FIG. Fig.18 and Fig.19 As shown, the semiconductor light emitting device 10F includes a light receiving base 470 disposed on the substrate front surface 21 of the substrate 20. In one example, the light receiving base 470 is placed on the first front electrode 51S. In one example, the light receiving base 470 is disposed across the first front electrode 51S and the second front electrode 52S.

[0183] The light receiving base 470 includes a first mounting electrode 471 and a second mounting electrode 472 provided on the mounting surface 73. The first mounting electrode 471 and the second mounting electrode 472 are spaced apart from each other in the Y direction. The first mounting electrode 471 is electrically connected to the first mounting electrode 77 of the mounting surface 71. The second mounting electrode 472 is electrically connected to the second mounting electrode 78 of the mounting surface 71.

[0184] The first mounting electrode 471 is electrically connected to the first front electrode 51S through the conductive adhesive material 94. The second mounting electrode 472 is electrically connected to the second front electrode 52S through the conductive adhesive material 94. The conductive adhesive material 94 may be formed of the same material as the conductive adhesive material 91, or may be formed of a different material.

[0185] (Effect)

[0186] According to the semiconductor light emitting device 10F of the seventh embodiment, the following effects are obtained.

[0187] (7-1) The same effects as those of the semiconductor light emitting device 10B of the third embodiment are obtained.

[0188] (7-2) By mounting the light receiving base 470 on the first front electrode 51S and the second front electrode 52S, the first mounting electrode 77 and the second mounting electrode 78 can be electrically connected to the first front electrode 51S and the second front electrode 52S. Therefore, the time and effort required to install the light receiving base 470 can be reduced.

[0189] (Eighth Embodiment)

[0190] Reference Fig. 20 and 21 A semiconductor light emitting device 10G according to an eighth embodiment is described. The semiconductor light emitting device 10G of the eighth embodiment is different from the semiconductor light emitting device 10B of the third embodiment in the shapes of the light receiving element 140 and the light receiving base 570. The points different from the semiconductor light emitting device 10B of the third embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0191] Fig. 20 is a schematic cross-sectional view of a semiconductor light emitting device 10G according to an eighth embodiment. Fig.21 is along Fig. 20 Schematic cross-sectional view of the semiconductor light emitting device 10G taken along line 21-21 in FIG. Fig. 20 and Fig.21 As shown, the semiconductor light emitting device 10G includes a light receiving base 570 disposed on the substrate front surface 21 of the substrate 20, and a light receiving element 140 mounted on the light receiving base 570. In one example, the light receiving base 570 is placed on the first front electrode 51S. In one example, the light receiving base 570 is arranged to cross the first front electrode 51S and the second front electrode 52S. In one example, the light receiving base 570 is bonded to the first front electrode 51S and the second front electrode 52S using an adhesive 92.

[0192] The light receiving element 140 is mounted on the mounting surface 71 of the light receiving base 570. The light receiving element 140 includes a first light receiving electrode 141 and a second light receiving electrode 142. The first light receiving electrode 141 and the second light receiving electrode 142 are arranged on the back surface 42 of the light receiving element. The light receiving element 140 is arranged so that the first light receiving electrode 141 and the second light receiving electrode 142 face the light receiving base 570. In addition, the light receiving element 140 is arranged so that the first light receiving electrode 141 and the second light receiving electrode 142 are aligned in the Y direction.

[0193] The light receiving base 570 includes a first mounting electrode 571 and a second mounting electrode 572. Fig.21 As shown, the first mounting electrode 571 is disposed on the mounting surface 71 close to the side surface 75. The second mounting electrode 572 is disposed adjacent to the first mounting electrode 571 in the Y direction. Fig. 20 As shown, the second mounting electrode 572 is formed on the mounting surface 71 so as to extend to a position overlapping with the second front electrode 52S.

[0194] The first light receiving electrode 141 of the light receiving element 140 is electrically connected to the first mounting electrode 571 of the light receiving base 570 via the conductive adhesive 93. The second light receiving electrode 142 of the light receiving element 140 is electrically connected to the second mounting electrode 572 of the light receiving base 570 via the conductive adhesive 93.

[0195] (Effect)

[0196] According to the semiconductor light emitting device 10G of the eighth embodiment, the following effects are obtained.

[0197] (8-1) The same effects as those of the semiconductor light emitting device 10B of the third embodiment are obtained.

[0198] (8-2) The light receiving element 140 includes a first light receiving electrode 141 and a second light receiving electrode 142 provided on the light receiving element back surface 42. The first light receiving electrode 141 and the second light receiving electrode 142 are electrically connected to the first mounting electrode 571 and the second mounting electrode 572 of the light receiving base 570 through the conductive adhesive material 93. The light receiving element 140 can be easily mounted on the light receiving base 570.

[0199] (Ninth Embodiment)

[0200] Reference Fig. 22 and 23 A semiconductor light emitting device 10H according to a ninth embodiment is described. The semiconductor light emitting device 10H of the ninth embodiment is different from the semiconductor light emitting device 10B of the third embodiment in that the light emitting base 60 is not used. The points different from the semiconductor light emitting device 10B of the third embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0201] Fig. 22 is a schematic cross-sectional view of a semiconductor light emitting device 10H according to a ninth embodiment. Fig.23 is along Fig. 22 Schematic cross-sectional view of the semiconductor light emitting device 10H taken along line 23-23 in FIG. Fig. 22 and Fig.23 As shown, the edge light emitting element 30 of the semiconductor light emitting device 10H is disposed on the third front electrode 53S. The second light emitting electrode 38 disposed on the light emitting element back surface 32 of the edge light emitting element 30 faces the third front electrode 53S. The second light emitting electrode 38 is electrically connected to the third front electrode 53S through a conductive adhesive material 91. The conductive adhesive material 91 is in contact with the second light emitting electrode 38 and the third front electrode 53S.

[0202] like Fig.23As shown, the light receiving element 40 can be disposed closer to the mounting surface 73 of the light receiving base 270 on the mounting surface 71. Therefore, the reception amount of the second laser beam L2 emitted from the second element end surface 34 of the edge light emitting element 30 can be increased.

[0203] (Effect)

[0204] According to the semiconductor light emitting device 10H of the ninth embodiment, the following effects are obtained.

[0205] (9-1) The same effects as those of the semiconductor light emitting device 10B of the third embodiment are obtained.

[0206] (Variation Example)

[0207] For example, the above embodiment can be modified as follows. As long as no technical contradiction occurs, the above embodiment and each modification to be described below can be combined with each other. In the following modifications, the same parts as those of the above embodiment are represented by the same reference numerals, and their detailed description is omitted.

[0208] Fig.24 is a cross-sectional view of a semiconductor light emitting device 10I according to a modification, and corresponds to Figure 2 FIG. 1 is a cross-sectional view of a semiconductor light emitting device 10 according to a first embodiment.

[0209] The semiconductor light emitting device 10I of the modification includes a cover member 180. The cover member 180 includes a main body 81 and a window member 87. The window member 87 is an integral body formed integrally with the main body 81. The cover member 180 can accommodate the edge light emitting element 30, the light receiving element 40, and the like.

[0210] Fig.25 is a cross-sectional view of a semiconductor light emitting device 10J according to a modification, and corresponds to Figure 4 FIG. 1 is a cross-sectional view of a semiconductor light emitting device 10 according to a first embodiment.

[0211] The semiconductor light emitting device 10J of the modified example includes a first light receiving base 671 and a second light receiving base 672. The first light receiving base 671 is disposed on the first front electrode 51S. The first light receiving base 671 includes a first mounting electrode 77, and the light receiving element 40 is mounted thereon. The second light receiving base 672 is disposed on the second front electrode 52S. The second light receiving base 672 includes a second mounting electrode 78. The wire W2 connected to the first light receiving electrode 44 of the light receiving element 40 is connected to the second mounting electrode 78 of the second light receiving base 672.

[0212] Fig.26 is a schematic plan view of a semiconductor light emitting device 10K according to a modification. Fig. 27 is along Fig.26Schematic cross-sectional view of the semiconductor light emitting device 10K taken along line 27 - 27 in FIG.

[0213] The semiconductor light emitting device 10K of the modification includes a sealing member 280 that seals the edge light emitting element 30 and the light receiving element 40. The sealing member 280 may seal at least a portion of the light receiving element 40 and at least a portion of the edge light emitting element 30.

[0214] like Fig. 27 As shown, the sealing member 280 is disposed on the substrate 20. The sealing member 280 is formed of a material through which the first laser beam L1 and the second laser beam L2 of the edge light emitting element 30 can pass. The sealing member 280 can be formed of, for example, a material containing at least one selected from the group of silicone resin, epoxy resin, and acrylic resin. In one example, the sealing member 280 is formed of silicone resin. In the semiconductor light emitting device 10K of the modified example, the sealing member 280 seals the entire light receiving element 40 and the entire edge light emitting element 30.

[0215] Sealing member 280 is formed into a generally rectangular flat plate shape, wherein the Z direction is the thickness direction. Sealing member 280 includes a sealing front 281 facing the same side as substrate front 21 and a first sealing side 282 to a fourth sealing side 285 intersecting with the sealing front 281. Sealing front 281 is a flat surface orthogonal to the thickness direction (Z direction) of substrate 20. For example, the first sealing side 282 to the fourth sealing side 285 are orthogonal to the sealing front 281. The first sealing side 282 and the second sealing side 283 constitute two end faces of sealing member 280 in the X direction, and the third sealing side 284 and the fourth sealing side 285 constitute two end faces of sealing member 280 in the Y direction. The first sealing side 282 faces the same side as the first substrate side 23, and the second sealing side 283 faces the same side as the second substrate side 24. The third sealing side 284 faces the same side as the third substrate side 25, and the fourth sealing side 285 faces the same side as the fourth substrate side 26. In one example, the first sealing side 282 and the first substrate side 23 are formed to be flush with each other. The second sealing side 283 and the second substrate side 24 are formed to be flush with each other. The third sealing side 284 and the third substrate side 25 are formed to be flush with each other. The fourth sealing side 285 and the fourth substrate side 26 are formed to be flush with each other.

[0216] The second sealing side surface 283 of the sealing member 280 faces the X direction, which is the same direction as the first element end surface 33 of the edge light emitting element 30. The first laser beam L1 of the edge light emitting element 30 is transmitted through the sealing member 280 and is emitted to the outside from the second sealing side surface 283. In the semiconductor light emitting device 10K of the modified example, the edge light emitting element 30 and the light receiving element 40 are sealed by the sealing member 280. Therefore, it is possible to suppress foreign matter such as moisture and dust from adhering to the edge light emitting element 30 and the light receiving element 40.

[0217] Fig.28 is a schematic plan view of a semiconductor light emitting device 10L according to a modification. Fig.29 is along Fig.28 Schematic cross-sectional view of the semiconductor light emitting device 10L taken along line 29 - 29 in FIG.

[0218] In the semiconductor light emitting device 10L of the modified example, the sealing member 280 is formed so as to expose the first element end surface 33 of the edge light emitting element 30 .

[0219] The second sealing side surface 283 of the sealing member 280 is located between the first element end surface 33 and the second element end surface 34 of the edge light emitting element 30 in the X direction. Thus, the first element end surface 33 of the edge light emitting element 30 is exposed from the sealing member 280. On the other hand, the second element end surface 34 of the edge light emitting element 30 is sealed with the sealing member 280. The light receiving element 40 is sealed with the sealing member 280.

[0220] In the semiconductor light emitting device 10L of the modification, the first element end face 33 of the edge light emitting element 30 is exposed from the sealing member 280. Therefore, an optical system (eg, a lens) for converging the first laser beam L1 emitted from the first element end face 33 can be provided close to the first element end face 33.

[0221] Fig.30 is a schematic plan view of a semiconductor light emitting device 10M according to a modification. Fig.31 is along Fig.30 Schematic cross-sectional view of the semiconductor light emitting device 10M taken along line 31 - 31 in FIG.

[0222] The semiconductor light emitting device 10M of the modification includes a sealing member 380. The sealing member 380 includes a cover member 381 and a sealing resin 382. The cover member 381 and the sealing resin 382 are Figure 1 and Figure 2 The illustrated body 81 is similarly configured. The region surrounded by the cover member 381 and the substrate 20 is filled with a sealing resin 382. The sealing resin 382 may be formed of, for example, a material containing at least one selected from the group of a silicone resin, an epoxy resin, and an acrylic resin.

[0223] Fig.32 is a schematic plan view of a semiconductor light emitting device 10N according to a modification. Fig.33 is along Fig.32 Schematic cross-sectional view of the semiconductor light emitting device 10N taken along line 33 - 33 in FIG.

[0224] The semiconductor light emitting device 10N of the modified example includes a sealing member 480. The sealing member 480 includes a main body 481 and a sealing resin 482. The main body 481 is disposed on the substrate front surface 21 and is formed to surround the edge light emitting element 30, the light receiving element 40, and the light receiving base 70. The main body 481 is formed in a frame shape that is open toward the opposite side of the substrate 20 in the Z direction. In one example, the main body 481 is formed in a frame shape along the substrate side surfaces 23 to 26 of the substrate 20. The main body 481 can be formed of a material that is transparent to the first laser beam L1 emitted from the edge light emitting element 30. The main body 481 can be formed of a glass material or a resin material such as a silicone resin, an epoxy resin, or an acrylic resin.

[0225] The sealing resin 482 is filled in the body 481. The sealing resin 482 seals the edge light emitting element 30 and the light receiving element 40. The sealing resin 482 can be formed of, for example, a material containing at least one selected from the group of silicone resin, epoxy resin, and acrylic resin. The resin upper surface of the sealing resin 482 can be flush with the upper end surface of the body 481. In addition, the resin upper surface of the sealing resin 482 can be recessed toward the substrate 20.

[0226] Fig.34 is a schematic cross-sectional view of a semiconductor light emitting device 100 according to a modification.

[0227] The semiconductor light emitting device 10O of the modified example includes a sealing member 280 and a light shielding layer 191 disposed on the sealing front side 281 of the sealing member 280. The light shielding layer 191 is formed to cover a portion of the sealing front side 281. When viewed from above, the light shielding layer 191 can be formed to cover the light receiving portion 43 of the light receiving element 40. The light shielding layer 191 can also be formed to cover the end of the edge light emitting element 30 including the second element end face 34. The light shielding layer 191 can be formed of, for example, a resin material having light shielding properties. For example, black epoxy resin is used as a resin material having light shielding properties. The light shielding layer 191 can be formed of, for example, a metal film. The light shielding layer 191 can be formed of an anti-reflection coating (AR coating). The shape of the light shielding layer 191 can be arbitrarily changed. The light shielding layer 191 suppresses light from outside the semiconductor light emitting device 10O from entering the light receiving portion 43 of the light receiving element 40.

[0228] Fig.35 is a schematic cross-sectional view of a semiconductor light emitting device 10P according to a modification.

[0229] The sealing member 280 of the semiconductor light emitting device 10P of the modified example includes a diffusion material 192. The diffusion material 192 diffuses the light within the sealing member 280 by reflecting (scattering) the light at the interface between the resin in the sealing member 280 and the diffusion material 192. The material of the diffusion material 192 is not particularly limited, and can be, for example, silicon dioxide or other glass materials. In one example, spherical silica fillers are used as the diffusion material 192. The particle size of the diffusion material 192 is not particularly limited, and, for example, a particle size that is sufficiently small relative to the wavelength of the first laser beam L1 and the second laser beam L2 emitted from the edge light emitting element 30 is selected so that scattering mainly occurs.

[0230] The diffusion material 192 is dispersed in the sealing member 280 as fine particles. The diffusion material 192 is mixed with the sealing member 280 at a predetermined mixing ratio. In one example, the diffusion material 192 is uniformly distributed in the sealing member 280. The mixing ratio of the diffusion material 192 and the resin of the sealing member 280 is not particularly limited, and can be greater than 0% and less than 100%. The larger the mixing ratio of the diffusion material 192, the easier it is for the light receiving element 40 to receive scattered light. This makes it possible to widen the pointing angle of the first laser beam L1 of the edge light-emitting element 30. In addition, by limiting the upper limit of the mixing ratio of the diffusion material 192 to a predetermined value, the output and radiation intensity of the laser beam (first laser beam) of the semiconductor light-emitting device 10P can be suppressed from being greatly reduced. In one example, a material whose thermal expansion coefficient is less than the thermal expansion coefficient of the resin of the sealing member 280 is selected as the diffusion material 192.

[0231] (Tenth embodiment)

[0232] Reference Figure 36 to Figure 38 A semiconductor light emitting device 10Q according to a tenth embodiment is described.

[0233] Fig.36 is a schematic plan view of a semiconductor light emitting device 10Q according to a tenth embodiment. Fig.37 is along Fig.36 Schematic cross-sectional view of the semiconductor light emitting device 10Q taken along line 37 - 37 in FIG. Fig.38 yes Fig.36 Schematic rear view of a semiconductor light emitting device 10Q is shown.

[0234] (Schematic Structure of Semiconductor Light Emitting Device)

[0235] like Figure 36 to Figure 38As shown, the semiconductor light emitting device 10Q includes a substrate 220, an edge light emitting element 230 disposed on the substrate 220, and a light receiving element 240 disposed on the substrate 220. The semiconductor light emitting device 10Q includes a light receiving base 770 on which the light receiving element 240 is mounted. The semiconductor light emitting device 10Q may include a light emitting base 260 on which the edge light emitting element 230 is mounted. In addition, the semiconductor light emitting device 10Q may include a cover member 580 that accommodates at least a portion of the edge light emitting element 230 and at least a portion of the light receiving element 240.

[0236] (Substrate)

[0237] The substrate 220 is a member that supports the edge light emitting element 230 and the light receiving element 240. The substrate 220 is formed in a rectangular flat plate shape in which the Z direction is a thickness direction.

[0238] The substrate 220 is formed in a rectangular shape, wherein its length in the Y direction is longer than its length in the X direction when viewed from above. The substrate 220 includes a substrate front face 221, a substrate back face 222 opposite to the substrate front face 221 in the Z direction, and first to fourth substrate side faces 223 to 226 connecting the substrate front face 221 and the substrate back face 222. The first substrate side face 223 and the second substrate side face 224 constitute two end faces of the substrate 220 in the X direction, and the third substrate side face 225 and the fourth substrate side face 226 constitute two end faces of the substrate 220 in the Y direction. The shape of the substrate 220 when viewed from above can be arbitrarily changed.

[0239] The substrate 220 is formed of, for example, an insulating material. The substrate 220 may be formed of, for example, a resin material including epoxy resin. The resin material may contain fillers such as glass, ceramic, etc. In addition, the substrate 220 may be formed of, for example, a material including ceramics. Examples of materials including ceramics include aluminum nitride, aluminum oxide, etc. The substrate 220 formed of a material including ceramics has high heat dissipation performance and can suppress the temperature of the semiconductor light emitting device 10Q from becoming too high.

[0240] (Front electrode and back electrode)

[0241] like Fig.36 and Fig.37 As shown, the semiconductor light emitting device 10Q includes front electrodes 251S to 254S provided on the substrate front surface 221. The front electrodes 251S to 254S are formed of a material containing one or more components appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0242] like Fig.36As shown, when viewed from above, the first front electrode 251S is disposed closer to the first substrate side 223 than the center of the substrate front surface 221 in the X direction. In addition, the first front electrode 251S is disposed at the center of the substrate front surface 221 in the Y direction. In one example, the first front electrode 251S is formed in a rectangular shape, wherein its length in the Y direction is longer than its length in the X direction when viewed from above. The arrangement position and shape of the first front electrode 251S on the substrate front surface 221 can be arbitrarily changed.

[0243] The second front electrode 252S is spaced apart from the first front electrode 251S. When viewed from above, the second front electrode 252S is spaced apart from the first front electrode 251S in the Y direction. When viewed from above, the second front electrode 252S is arranged closer to the first substrate side 223 than the center of the substrate front 221 in the X direction. In addition, the second front electrode 252S is arranged closer to the fourth substrate side 226 than the center of the substrate front 221 in the Y direction. It can be said that the second front electrode 252S is arranged between the first front electrode 251S and the fourth substrate side 226. In one example, the second front electrode 252S is formed in a rectangular shape, wherein, when viewed from above, its length in the Y direction is shorter than its length in the X direction. The setting position and shape of the second front electrode 252S on the substrate front 221 can be arbitrarily changed.

[0244] The third front electrode 253S is spaced apart from the first front electrode 251S. When viewed from above, the third front electrode 253S is spaced apart from the first front electrode 251S in the X direction. When viewed from above, the third front electrode 253S is arranged closer to the second substrate side 224 than the center of the substrate front 221 in the X direction. In addition, the third front electrode 253S is arranged at the center of the substrate front 221 in the Y direction. In one example, the third front electrode 253S is formed in a rectangular shape, wherein, when viewed from above, its length in the Y direction is longer than its length in the X direction. The setting position and shape of the third front electrode 253S on the substrate front 221 can be arbitrarily changed.

[0245] The semiconductor light emitting device 10Q includes a plurality of fourth front electrodes 254S. In one example, the semiconductor light emitting device 10Q includes eight fourth front electrodes 254S. The number of the fourth front electrodes 254S may vary depending on the configuration of the edge light emitting element 230 .

[0246] In order to distinguish the plurality of fourth front electrodes 254S, they are referred to as first to eighth auxiliary electrodes 551 to 558. It can be said that the plurality of fourth front electrodes 254S includes the first to eighth auxiliary electrodes 551 to 558.

[0247] The first to eighth auxiliary electrodes 551 to 558 are spaced apart from the third front electrode 253S. The first to eighth auxiliary electrodes 551 to 558 are disposed to surround the third front electrode 253S in a plan view.

[0248] The first auxiliary electrode 551 is spaced apart from the third front electrode 253S in the Y direction. The first auxiliary electrode 551 is disposed closer to the third substrate side surface 225 in the Y direction of the substrate front surface 221. It can be said that the first auxiliary electrode 551 is disposed between the third front electrode 253S and the third substrate side surface 225.

[0249] The second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 are spaced apart from the third front electrode 253S in the X direction. The second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 are disposed between the third front electrode 253S and the first front electrode 251S. The light receiving base 770 is disposed on the first front electrode 251S, and the edge light emitting element 230 is disposed on the third front electrode 253S. It can be said that the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 are disposed between the light receiving base 770 and the edge light emitting element 230 when viewed from above. The second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 correspond to "a plurality of intermediate electrodes".

[0250] The eighth auxiliary electrode 558 is spaced apart from the third front electrode 253S in the Y direction. The eighth auxiliary electrode 558 is disposed closer to the fourth substrate side surface 226 in the Y direction of the substrate front surface 221. It can be said that the eighth auxiliary electrode 558 is disposed between the third front electrode 253S and the fourth substrate side surface 226.

[0251] In one example, the first to eighth auxiliary electrodes 551 to 558 are formed in a rectangular shape, wherein, in a top view, their lengths along the Y direction are shorter than their lengths along the X direction. The positions and shapes of the first to eighth auxiliary electrodes 551 to 558 on the substrate front surface 221 may be arbitrarily changed.

[0252] like Fig.37 and Fig.38 As shown, the semiconductor light emitting device 10Q includes back electrodes 251R to 254R provided on the substrate back surface 222. The back electrodes 251R to 254R are formed of a material containing one or more components appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0253] like Fig.38As shown, when viewed from above, the first back electrode 251R is disposed closer to the first substrate side 223 than the center of the substrate back surface 222 in the X direction. In addition, the first back electrode 251R is disposed at the center of the substrate back surface 222 in the Y direction. In one example, the first back electrode 251R is formed in a rectangular shape, wherein, when viewed from above, its length in the Y direction is longer than its length in the X direction. In one example, the first back electrode 251R is formed to have a Fig.36 The first front electrode 251S shown has the same size as the first front electrode 251S. The arrangement position and shape of the first rear electrode 251R on the rear surface 222 of the substrate can be arbitrarily changed.

[0254] The second back electrode 252R is spaced apart from the first back electrode 251R. When viewed from above, the second back electrode 252R is spaced apart from the first back electrode 251R in the Y direction. When viewed from above, the second back electrode 252R is disposed closer to the first substrate side 223 than the center of the substrate back surface 222 in the X direction. In addition, the second back electrode 252R is disposed closer to the fourth substrate side 226 than the center of the substrate back surface 222 in the Y direction. It can be said that the second back electrode 252R is disposed between the first back electrode 251R and the fourth substrate side 226. In one example, the second back electrode 252R is formed in a rectangular shape, wherein, when viewed from above, its length in the Y direction is shorter than its length in the X direction. In one example, the second back electrode 252R is formed to have a Fig.36 The second front electrode 252S shown has the same size as the second front electrode 252S. The location and shape of the second back electrode 252R on the back surface 222 of the substrate can be changed arbitrarily.

[0255] The third back electrode 253R is spaced apart from the first back electrode 251R. When viewed from above, the third back electrode 253R is spaced apart from the first back electrode 251R in the X direction. When viewed from above, the third back electrode 253R is disposed closer to the second substrate side 224 than the center of the substrate back surface 222 in the X direction. In addition, the third back electrode 253R is disposed at the center of the substrate back surface 222 in the Y direction. In one example, the third back electrode 253R is formed in a rectangular shape, wherein, when viewed from above, its length in the Y direction is longer than its length in the X direction. In one example, the third back electrode 253R is formed to have a Fig.36 The third front electrode 253S shown has the same size as the third front electrode 253S. The location and shape of the third rear electrode 253R on the rear surface 222 of the substrate can be changed arbitrarily.

[0256] The semiconductor light emitting device 10Q includes a plurality of fourth back electrodes 254R. In one example, the semiconductor light emitting device 10Q includes eight fourth back electrodes 254R. The number of the fourth back electrodes 254R may be set to correspond to the number of the fourth front electrodes 254S.

[0257] The first to eighth auxiliary electrodes 561 to 568 are used to distinguish the plurality of fourth back electrodes 254R. In other words, the plurality of fourth back electrodes 254R include the first to eighth auxiliary electrodes 561 to 568.

[0258] The first auxiliary electrode 561 is spaced apart from the third back electrode 253R in the Y direction. The first auxiliary electrode 561 is disposed closer to the third substrate side 225 in the Y direction of the substrate front surface 221. It can be said that the first auxiliary electrode 561 is disposed between the third back electrode 253R and the third substrate side 225.

[0259] The second to seventh auxiliary electrodes 562 to 567 are spaced apart from the third back electrode 253R in the X direction. The second to seventh auxiliary electrodes 562 to 567 are disposed between the third back electrode 253R and the first back electrode 251R.

[0260] The eighth auxiliary electrode 568 is spaced apart from the third back electrode 253R in the Y direction. The eighth auxiliary electrode 568 is disposed closer to the fourth substrate side surface 226 in the Y direction of the substrate front surface 221. It can be said that the eighth auxiliary electrode 568 is disposed between the third back electrode 253R and the fourth substrate side surface 226.

[0261] In one example, the first to eighth auxiliary electrodes 561 to 568 are formed in a rectangular shape, wherein, in a top view, their lengths along the Y direction are shorter than their lengths along the X direction. The positions and shapes of the first to eighth auxiliary electrodes 561 to 568 on the substrate back surface 222 may be arbitrarily changed.

[0262] like Figures 36 to 38 As shown, the semiconductor light emitting device 10Q includes through holes 251V to 254V provided in the substrate 220. Fig.36 and Fig.38 , the vias 251V to 254V are indicated by dotted lines. The vias 251V to 254V may be formed of a material containing one or more components appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0263] The through holes 251V to 254V penetrate the substrate 220 in the Z direction. The first through hole 251V electrically connects the first front electrode 251S and the first back electrode 251R. The second through hole 252V electrically connects the second front electrode 252S and the second back electrode 252R. The third through hole 253V electrically connects the third front electrode 253S and the third back electrode 253R. The fourth through hole 254V electrically connects the fourth front electrode 254S and the fourth back electrode 254R. The number of each of the through holes 251V to 254V can be changed as needed.

[0264] (Luminous base)

[0265] like Fig.36 and Fig.37 As shown, the light emitting base 260 is formed in a rectangular flat plate shape, wherein the Z direction is the thickness direction. The light emitting base 260 is formed of, for example, a conductive material. As the conductive material, for example, Cu, Al, etc. are used. In one example, the light emitting base 260 is formed of Cu.

[0266] The light emitting base 260 includes a base front face 261 and a base back face 262 facing opposite sides. The base front face 261 faces the same side as the substrate front face 221 of the substrate 220, and the base back face 262 faces the same side as the substrate back face 222 of the substrate 220.

[0267] The light emitting base 260 is electrically connected to the third front electrode 253S through the conductive adhesive material 91. The conductive adhesive material 91 is in contact with the base back surface 262. When viewed from above, the size of the light emitting base 260 in the X direction is smaller than the size of the third front electrode 253S in the X direction, and the size of the light emitting base 260 in the Y direction is smaller than the size of the third front electrode 253S in the Y direction.

[0268] (Edge light element)

[0269] The edge light element 230 is spaced apart from the light receiving element 240 in the X direction. In one example, the edge light element 230 is disposed at a position overlapping the light receiving element 240 when viewed from the X direction. The edge light element 230 is disposed closer to the second substrate side surface 224 than the light receiving element 240.

[0270] The edge light emitting element 230 is a laser diode that emits a laser beam in a predetermined wavelength band, and is used as a light source of the semiconductor light emitting device 10Q. For example, an edge light emitting type laser is used as the edge light emitting element 230. The wavelength band of the laser beam may be a visible light band, or may be a long wavelength band (e.g., ultraviolet rays) having a wavelength longer than visible light.

[0271] The edge light emitting element 230 is formed in a rectangular parallelepiped shape. In one example, the edge light emitting element 230 is formed in a rectangular shape, wherein its length in the Y direction is longer than its length in the X direction when viewed from above. The shape of the edge light emitting element 230 when viewed from above can be arbitrarily changed.

[0272] like Fig.36 and Fig.37 As shown, the edge light-emitting element 230 includes a light-emitting element front face 231 and a light-emitting element back face 232 facing opposite sides to each other in the Z direction, a first element end face 233 and a second element end face 234 facing opposite sides to each other in the X direction, and element side faces 235 and 236 facing opposite sides to each other in the Y direction. The first element end face 233 and the second element end face 234 constituting the two end faces in the X direction are composed of flat surfaces orthogonal to the light-emitting element front face 231 (light-emitting element back face 232). The first element end face 233 and the second element end face 234 face opposite sides to each other. The semiconductor light-emitting device 10Q is configured to emit a first laser beam L1 from the first element end face 233 in the X direction, and the X direction is an example of a first direction (X direction) intersecting the Z direction in a plan view. In addition, the semiconductor light-emitting device 10Q is configured to emit a second laser beam L2 from the second element end face 234 in a direction opposite to the emission direction of the first laser beam L1.

[0273] like Fig.36 As shown, the edge light-emitting element 230 includes eight first light-emitting electrodes 2371 to 2378 formed on the front side 231 of the light-emitting element and one second light-emitting electrode 238 formed on the back side 232 of the light-emitting element. The edge light-emitting element 230 includes emission regions 233A and 234A for each of the first light-emitting electrodes 2371 to 2378. When viewed from above, the plurality of first light-emitting electrodes 2371 to 2378 are spaced apart in the Y direction. The plurality of emission regions 233A and 234A are arranged along the Y direction. The edge light-emitting element 230 is configured to emit laser beams from the plurality of emission regions 233A and 234A. In one example, the first light-emitting electrodes 2371 to 2378 may form an anode, and the second light-emitting electrode 238 may form a cathode. The first light-emitting electrodes 2371 to 2378 and the second light-emitting electrode 238 may be composed of a stacked structure of a plurality of conductive films.

[0274] The edge light-emitting element 230 includes a semiconductor stack structure composed of a plurality of semiconductor layers including a light-emitting layer. The light-emitting layer is composed of, for example, one or more active layers. The light-emitting layer extends in the X direction. The edge light-emitting element 230 is configured to emit a laser beam generated from the light-emitting layer by power supplied by the first light-emitting electrodes 2371 to 2378 and the second light-emitting electrode 238 from the first element end face 233 and the second element end face 234. It can be said that the first element end face 233 and the second element end face 234 include emission areas 233A and 234A from which the laser beam is emitted. Fig.36 , the emission regions 233A and 234A of the first element end face 233 and the second element end face are clearly shown. In one example, the emission regions 233A and 234A are located closer to the light emitting element front face 231 than the center in the thickness direction.

[0275] The edge light emitting element 230 is disposed on the light emitting base 260. The edge light emitting element 230 is bonded to the light emitting base 260 by a conductive bonding material 91. In one example, the edge light emitting element 230 is disposed so that the second light emitting electrode 238 faces the base front surface 261 of the light emitting base 260. The second light emitting electrode 238 of the edge light emitting element 230 is electrically connected to the light emitting base 260 by the conductive bonding material 91. The conductive bonding material 91 is in contact with the base front surface 261.

[0276] like Fig.36 As shown, the edge light emitting element 230 is electrically connected to the first auxiliary electrode 551 to the eighth auxiliary electrode 558. The first light emitting electrodes 2371 to 2378 of the edge light emitting element 230 are electrically connected to the first auxiliary electrode 551 to the eighth auxiliary electrode 558 through a plurality of wires W1. The wires W1 are bonding wires formed by, for example, a wire bonding device, and are formed of a conductive material such as Au, Al, Cu, etc.

[0277] (Light receiving base)

[0278] The semiconductor light emitting device 10Q includes a light receiving base 770 disposed on the substrate front surface 221 of the substrate 220. In one example, the light receiving base 770 is disposed on the first front surface electrode 251S.

[0279] In one example, the light receiving base 770 is formed in a rectangular flat plate shape. When viewed from the Y direction, the light receiving base 770 is formed in a rectangular shape. In one example, when viewed from the Y direction, the light receiving base 770 is formed in a parallelogram shape.

[0280] The light receiving base 770 includes a mounting surface 771 and a mounting back surface 772 facing opposite sides to each other in the thickness direction of the light receiving base 770, a mounting surface 773 and an upper surface 774 facing opposite sides to each other in the Z direction, and side surfaces 775 and 776 facing opposite sides to each other in the Y direction. In one example, the mounting surface 771, the mounting back surface 772, the mounting surface 773, and the upper surface 774 are formed in a rectangular shape, and the side surfaces 775 and 776 are formed in a parallelogram shape. The light receiving base 770 is arranged so that the mounting surface 773 faces the substrate front surface 221 of the substrate 220.

[0281] like Fig.36 As shown, the light receiving base 770 is arranged to cross the first front electrode 251S and the second front electrode 252S. The light receiving base 770 is arranged so that the mounting surface 771 faces the second element end surface 234 of the edge light emitting element 230. The light receiving base 770 is bonded to the first front electrode 251S and the second front electrode 252S using an adhesive 92. In one example, the adhesive 92 may include an insulating resin material such as an epoxy resin.

[0282] like Fig.36 and Fig.37 As shown, a first carrying electrode 777 and a second carrying electrode 778 are formed on the carrying surface 771. In one example, when viewed from a direction perpendicular to the carrying surface 771, the first carrying electrode 777 and the second carrying electrode 778 are formed in a rectangular shape. In one example, the first carrying electrode 777 and the second carrying electrode 778 are formed on the carrying surface 771 in a manner extending from an end portion on the carrying surface 773 side toward an end portion on the upper surface 774 side. The first carrying electrode 777 and the second carrying electrode 778 can be formed of a material containing one or more components appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0283] The first mounting electrode 777 is electrically connected to the first front electrode 251S via the conductive adhesive material 93. The second mounting electrode 778 is electrically connected to the second front electrode 252S via the conductive adhesive material 93.

[0284] When viewed from the Y direction, the mounting surface 771 of the light receiving base 770 may extend in a direction intersecting the substrate front surface 221. The angle of the mounting surface 771 relative to the substrate front surface 221 may be determined by the angle between the mounting surface 771 of the light receiving base 770 and the mounting surface 773 facing the substrate front surface 221. The angle between the mounting surface 771 and the mounting surface 773 may be referred to as an inclination angle of the mounting surface 771. The inclination angle may be greater than 60 degrees and less than 90 degrees.

[0285] The light receiving base 770 of the tenth embodiment is formed so as to extend away from the second element end surface 234 as the mounting surface 771 extends away from the substrate front surface 221 in the X direction. The tilt angle of the light receiving base 770 of the tenth embodiment may be equal to or greater than 60 degrees and less than 90 degrees.

[0286] (Light receiving element)

[0287] like Fig.36 and Fig.37 As shown, the light receiving element 240 is mounted on the light receiving base 770. The light receiving element 240 is mounted on the mounting surface 771 of the light receiving base 770.

[0288] The light receiving element 240 is formed in a rectangular flat plate shape. The light receiving element 240 includes a light receiving element front surface 241 and a light receiving element back surface 242 facing opposite sides to each other in the thickness direction. The light receiving element 240 is configured to receive a plurality of second laser beams L2 emitted from a plurality of emission regions 234A of the edge light emitting element 230.

[0289] The light receiving element 240 is, for example, a photodiode. The light receiving element 240 includes a light receiving portion 243. The light receiving portion 243 is formed at the front side 241 of the light receiving element. The formation range of the light receiving portion 243 is defined, for example, by a p-type well region formed in an n-type semiconductor substrate provided at the light receiving element 240. The light receiving element 240 also includes a first light receiving electrode 244 and a second light receiving electrode 245. The first light receiving electrode 244 is formed on the front side 241 of the light receiving element. In addition, the second light receiving electrode 245 is formed on the back side 242 of the light receiving element. The first light receiving electrode 244 constitutes one of the anode and the cathode of the photodiode, and the second light receiving electrode 245 constitutes the other of the anode and the cathode of the photodiode. In the first embodiment, the first light receiving electrode 244 constitutes the anode, and the second light receiving electrode 245 constitutes the cathode. The light receiving element 240 is configured such that a current flows from the first light receiving electrode 244 to the second light receiving electrode 245 of the light receiving element 240 depending on the amount of light irradiated onto the light receiving portion 243 .

[0290] The light receiving element 240 is bonded to the first mounting electrode 777 provided on the mounting surface 771 of the light receiving base 770. The light receiving element 240 is provided so that the second light receiving electrode 245 faces the first mounting electrode 777. The second light receiving electrode 245 is electrically connected to the first mounting electrode 777 through the conductive bonding material 91.

[0291] The first light receiving electrode 244 of the light receiving element 240 is electrically connected to the second mounting electrode 778 through a wire W2. In one example, a first end of the wire W2 is electrically connected to the first light receiving electrode 244, and a second end of the wire W2 is electrically connected to the second mounting electrode 778. The second end of the wire W2 may be electrically connected to the first light receiving electrode 244, and the first end of the wire W2 may be electrically connected to the second mounting electrode 778. The wire W2 is a bonding wire formed by, for example, a wire bonding device, and is formed of, for example, a conductive material such as Au, Al, Cu, or the like.

[0292] The light receiving portion 243 of the light receiving element 240 mounted on the light receiving base 770 faces the same direction as the mounting surface 771 of the light receiving base 770. The mounting surface 771 faces the second element end surface 234 of the edge light emitting element 230. Therefore, the light receiving portion 243 of the light receiving element 240 faces the second element end surface 234 of the edge light emitting element 230. The mounting surface 771 of the light receiving base 770 is formed to extend away from the second element end surface 234 in the Z direction as it extends away from the substrate front surface 221. Therefore, it can be said that the light receiving element 240 is arranged so as to extend away from the second element end surface 234 in the Z direction as the light receiving element front surface 241 extends away from the substrate front surface 221.

[0293] The light receiving base 770 is arranged so that the light receiving element front face 241 of the light receiving element 240 mounted on the light receiving base 770 is spaced apart from the second element end face 234 of the edge light emitting element 230 in the X direction. The distance D1 between the second element end face 234 of the edge light emitting element 230 and the light receiving element front face 241 of the light receiving element 240 is preferably not less than 0.5 mm and not more than 2.6 mm. The distance D1 is the distance in the X direction between a position on the light receiving element front face 241 of the light receiving element 240 that is located at the same position as the emission region 234A of the second element end face 234 in the Z direction and the second element end face 234 of the edge light emitting element 230.

[0294] (Cover member)

[0295] like Fig.36 , Fig.37 and Fig.38 As shown, the semiconductor light emitting device 10Q includes a cover member 580. The cover member 580 accommodates at least a portion of the edge light emitting element 230 and at least a portion of the light receiving element 240. Fig.37 The illustrated cover member 580 accommodates the entire edge light emitting element 230 and the entire light receiving element 240 .

[0296] The cover member 580 is disposed on the substrate 220. The cover member 580 is attached to the substrate front surface 221 of the substrate 220 by, for example, an adhesive. The semiconductor light emitting device 10Q includes a sealed space 588 formed between the inner surface of the cover member 580 and the substrate front surface 221 of the substrate 220. It can be said that the edge light emitting element 230 and the light receiving element 240 are disposed in the sealed space 588.

[0297] The cover member 580 is formed into a box shape that opens toward the substrate 220. The cover member 580 includes a main body 581. The main body 581 includes an opening 582, through which the laser beam emitted from the first element end face 233 of the edge light emitting element 230 passes. The main body 581 includes side walls 583 and 584 extending along the substrate side faces 225, 226 of the substrate 220, a side wall 585 extending along the substrate side face 223 of the substrate 220, and an upper wall 586 covering the edge light emitting element 230 and the light receiving element 240 in the Z direction. The side walls 583, 584, and 585 are formed into a flat plate shape extending along the substrate side faces 225, 226, and 223. The upper wall 586 is formed into a flat plate shape orthogonal to the Z direction.

[0298] The cover member 580 may include a window member 587 that closes the opening 582 of the body 581. The window member 587 is formed to extend along the substrate side 224 of the substrate 220. The window member 587 is formed in a flat plate shape extending along the substrate side 224. The window member 587 is formed integrally with the body 581. The window member 587 and the body 581 may be an integral object.

[0299] The body 581 may be formed of a material that is transparent to the laser beam emitted from the edge light emitting element 230. The body 581 may be formed of a glass material or a resin material such as silicone resin, epoxy resin, acrylic resin, etc. The body 581 may be formed of a material that blocks the laser beam emitted from the edge light emitting element 230. The body 581 may be formed of a metal material or a material including ceramics.

[0300] (Effect)

[0301] According to the semiconductor light emitting device 10Q of the tenth embodiment, the following effects are obtained.

[0302] (10-1) The same effects as those of the semiconductor light emitting device 10 of the first embodiment are obtained.

[0303] (10-2) The edge light emitting element 230 includes the plurality of emission regions 233A. Therefore, the laser output of the semiconductor light emitting device 10Q can be increased.

[0304] (Eleventh Embodiment)

[0305] Reference Figure 39 to Figure 41A semiconductor light emitting device 10R according to an eleventh embodiment is described. The semiconductor light emitting device 10R of the eleventh embodiment is different from the semiconductor light emitting device 10Q of the tenth embodiment in the arrangement of the front electrode. The points different from the semiconductor light emitting device 10Q of the tenth embodiment are described in detail below. In addition, the same components as those of the semiconductor light emitting device 10Q of the tenth embodiment are denoted by the same reference numerals, and their detailed description is omitted.

[0306] Fig.39 is a schematic plan view of a semiconductor light emitting device 10R according to an eleventh embodiment. Fig.40 is along Fig.39 Schematic cross-sectional view of the semiconductor light emitting device 10R taken along line 40 - 40 in FIG. Fig.41 yes Fig.39 Schematic rear view of a semiconductor light emitting device 10R is shown.

[0307] like Figure 39 to Figure 41 As shown, the semiconductor light emitting device 10R includes the first auxiliary electrode 551 to the eighth auxiliary electrode 558, which are a plurality of fourth front electrodes 254S. The second auxiliary electrode 552 to the seventh auxiliary electrode 557 are arranged on the opposite side of the edge light emitting element 230 relative to the first front electrode 251S. The second auxiliary electrode 552 to the seventh auxiliary electrode 557 are arranged closer to the first substrate side 223 than the light receiving base 770 and the light receiving element 240. It can be said that the second auxiliary electrode 552 to the seventh auxiliary electrode 557 are arranged so that when viewed from above, the light receiving base 770 and the light receiving element 240 are sandwiched between the second auxiliary electrode 552 to the seventh auxiliary electrode 557 and the edge light emitting element 230. The second auxiliary electrode 552 to the seventh auxiliary electrode 557 correspond to the "plurality of end electrodes".

[0308] like Fig.39 and Fig.40 As shown, the wire W1 electrically connecting the first light emitting electrodes 2372 to 2377 and the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 of the edge light emitting element 230 is arranged to pass through the opposite side of the substrate 220 relative to the light receiving base 770 and the light receiving element 240. The wire W1 electrically connecting the first light emitting electrodes 2372 to 2377 and the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 is arranged to pass between the light receiving element 240 and the light receiving base 770 and the cover member 580, specifically, between the light receiving element 240 and the light receiving base 770 and the upper wall 586 of the cover member 580.

[0309] (operate)

[0310] When the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 are provided between the edge light emitting element 230 and the light receiving element 240, as in the semiconductor light emitting device 10Q of the tenth embodiment, the amount of light incident on the light receiving element 240 may be reduced or fluctuated depending on the state of the wire W1 connected to the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557. On the other hand, in the semiconductor light emitting device 10R of the eleventh embodiment, the wire W1 electrically connecting the first light emitting electrodes 2372 to 2377 of the edge light emitting element 230 and the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 is provided to pass through the opposite side of the substrate 220 relative to the light receiving base 770 and the light receiving element 240. Therefore, the amount of light incident on the light receiving element 240 can be stabilized.

[0311] (Effect)

[0312] According to the semiconductor light emitting device 10R of the eleventh embodiment, the following effects are obtained.

[0313] (11-1) The same effects as those of the semiconductor light emitting device 10Q of the tenth embodiment are obtained.

[0314] (11-2) In the semiconductor light emitting device 10R of the eleventh embodiment, the wire W2 electrically connecting the first light emitting electrodes 2372 to 2377 and the second auxiliary electrodes 552 to the seventh auxiliary electrodes 557 of the edge light emitting element 230 is provided to pass through the opposite side of the substrate 220 in the Z direction with respect to the light receiving base 770 and the light receiving element 240. Therefore, the amount of light incident on the light receiving element 240 can be stabilized.

[0315] (Variation Example)

[0316] For example, the above embodiment can be modified as follows. As long as no technical contradiction occurs, the above embodiment and each modification described below can be combined with each other. In addition, in the following modifications, the parts common to the above embodiment are represented by the same reference numerals as the above embodiment, and their description is omitted.

[0317] - In the tenth and eleventh embodiments, the number of emission areas included in one edge light emitting element can be changed as required.

[0318] - Unlike the tenth and eleventh embodiments, a semiconductor light emitting device including a plurality of edge light emitting elements may be provided. For example, the semiconductor light emitting device may be configured by including a plurality of edge light emitting elements 30 shown in the first embodiment. The number of edge light emitting elements may be any number equal to or greater than two. The number of light emitting portions included in the edge light emitting element may be any number equal to or greater than two. For example, four edge light emitting elements including two light emitting portions may be mounted.

[0319] -The composition of the substrate 20 can be changed as needed. The substrate 20 can be formed of a metal material such as Cu, Al, etc. In this case, insulating layers are formed on the front and back sides of a flat frame (e.g., a metal core) formed of Cu, Al, etc., respectively. A plurality of front electrodes are formed on the insulating layer (substrate front side 21) formed on the front side of the frame. A plurality of back electrodes are formed on the insulating layer (substrate back side 22) formed on the back side of the frame. A plurality of through wirings (through holes) electrically connecting the plurality of back electrodes and the plurality of front electrodes, respectively, penetrate the frame in the thickness direction (Z direction) of the frame. In this case, an insulating layer is formed on the inner surface of the through hole formed in the frame. For example, the through wiring is formed to fill the space formed in the insulating layer. The same can be applied to the substrate 220 and components related to the substrate 220.

[0320] -In the above embodiment, the configuration of the substrate 20, the first front electrode 51S to the fourth front electrode 54S, the first back electrode 51R to the fourth back electrode 54R, and the first through hole 51V to the fourth through hole 54V can be arbitrarily changed. In one example, instead of a plurality of front electrodes, a plurality of back electrodes, and a plurality of through holes, the semiconductor light emitting device may include a frame in which the front electrode, the back electrode, and the through hole are integrated, and a substrate formed of an insulating material and configured as a supporting frame. In this case, a plurality of frames are provided to correspond to a plurality of front electrodes (a plurality of back electrodes). The substrate is formed of, for example, epoxy resin (such as an insulating material). A plurality of frames are arranged to pass through the substrate in the Z direction. Therefore, a plurality of frames exposed from the front side of the substrate constitute a plurality of front electrodes, and a plurality of frames exposed from the back side of the substrate constitute a plurality of back electrodes.

[0321] As used herein, terms such as "first", "second", and "third" are used only to distinguish objects and are not intended to rank the objects. As used herein, the expression "at least one" means "one or more" desired options. As an example, if the number of options is two, the expression "at least one" used herein means "only one option" or "both of the two options". As another example, if there are three or more options, the expression "at least one" used herein means "only one option" or "any combination of two or more options".

[0322] As used herein, the term "above" includes "on" and "above", unless the context clearly dictates otherwise. Thus, the phrase "a first layer is formed above a second layer" means that in a certain embodiment, the first layer is directly disposed on and in contact with the second layer, but in another embodiment, the first layer is disposed above the second layer without contacting the second layer. That is, the term "above" does not exclude a structure in which another layer is formed between the first layer and the second layer.

[0323] The Z-axis direction used in this article is not necessarily the vertical direction, nor is it necessarily completely consistent with the vertical direction. Figure 1 In the structure shown in FIG. 1 , the “up” and “down” in the Z-axis direction described herein are not limited to the “up” and “down” in the vertical direction. For example, the X-axis direction may be the vertical direction, or the Y-axis direction may be the vertical direction.

[0324] (Note)

[0325] The following describes the technical ideas that can be understood from the present disclosure. Not for the purpose of limitation, but to help understanding, the reference numerals of the corresponding components used in the embodiments are attached to the components described in the supplementary notes. The reference numerals are indicated by way of example to help understanding, and the components described in each supplementary note should not be limited to the components indicated by the reference numerals.

[0326] (Note 1)

[0327] A semiconductor light emitting device, comprising:

[0328] A substrate (20), comprising a substrate front surface (21);

[0329] an edge light-emitting element (30) mounted on the front surface (21) of the substrate, the edge light-emitting element (30) comprising a first element end surface facing a first direction intersecting a thickness direction perpendicular to the front surface (21) of the substrate and a second element end surface facing a direction opposite to the first element end surface, the edge light-emitting element (30) being configured to emit light from the first element end surface and the second element end surface;

[0330] a light receiving base (70) disposed on the front surface (21) of the substrate and comprising a mounting surface facing the end surface of the second element; and

[0331] A light receiving element (40) is mounted on the mounting surface and includes a light receiving portion arranged on the front surface of the light receiving element and facing the second element end surface.

[0332] (Note 2)

[0333] The semiconductor light emitting device according to Supplementary Note 1, wherein the light receiving base (70) has insulating properties.

[0334] (Note 3)

[0335] The semiconductor light emitting device according to Supplementary Note 1 or 2, wherein the light receiving base (70) is formed so that the mounting surface is perpendicular to the substrate front surface (21).

[0336] (Note 4)

[0337] A semiconductor light emitting device according to Note 1 or 2, wherein the light receiving base (70) is formed so that as the mounting surface extends away from the substrate front surface (21) in the thickness direction, the mounting surface extends away from the second element end surface.

[0338] (Note 5)

[0339] A semiconductor light emitting device according to Supplement 4, wherein an angle of the mounting surface relative to the front surface (21) of the substrate is greater than 60 degrees and less than 90 degrees.

[0340] (Note 6)

[0341] The semiconductor light emitting device according to any one of Notes 1 to 5, wherein the substrate (20) includes a substrate back surface facing the side opposite to the substrate front surface (21),

[0342] The semiconductor light emitting device further comprises a first back electrode and a second back electrode disposed on the back surface of the substrate, and

[0343] Wherein, the light receiving element (40) is electrically connected between the first back electrode and the second back electrode.

[0344] (Note 7)

[0345] A semiconductor light-emitting device according to Note 6, wherein the light receiving element (40) includes a first light receiving electrode arranged on the front side of the light receiving element (40), a back side of the light receiving element (40) facing the side opposite to the front side of the light receiving element (40), and a second light receiving electrode arranged on the back side of the light receiving element (40).

[0346] (Note 8)

[0347] A semiconductor light-emitting device according to Note 6, wherein the light receiving element (40) includes a back side of the light receiving element (40) facing the side opposite to the front side of the light receiving element (40), and a first light receiving electrode and a second light receiving electrode arranged on the back side of the light receiving element (40).

[0348] (Note 9)

[0349] A semiconductor light-emitting device according to Note 7 or 8, wherein the light receiving base (70) includes a first mounting electrode arranged on the mounting surface and electrically connected to the first light receiving electrode, and a second mounting electrode arranged on the mounting surface and electrically connected to the second light receiving electrode.

[0350] (Note 10)

[0351] The semiconductor light emitting device according to Supplementary Note 9 further comprises:

[0352] A first front electrode, disposed on the front surface (21) of the substrate and electrically connected to the first back electrode; and

[0353] a second front electrode, arranged on the front side (21) of the substrate and electrically connected to the second back side electrode,

[0354] wherein the first mounting electrode is electrically connected to the first front electrode, and

[0355] Wherein, the second mounting electrode is electrically connected to the second front electrode.

[0356] (Note 11)

[0357] The semiconductor light emitting device according to Supplementary Note 10, wherein the light receiving base (70) is arranged to straddle the first front electrode and the second front electrode.

[0358] (Note 12)

[0359] A semiconductor light emitting device according to Supplementary Note 10, wherein the light receiving base (70) is arranged on the front surface (21) of the substrate in a manner not to overlap with the first front surface electrode and the second front surface electrode when viewed from the thickness direction.

[0360] (Note 13)

[0361] The semiconductor light emitting device according to any one of Supplementary Notes 10 to 12, further comprising:

[0362] The first wire is configured to electrically connect the first light receiving electrode and the second mounting electrode.

[0363] (Note 14)

[0364] A semiconductor light emitting device according to Supplementary Note 9, wherein the light receiving base (70) is formed integrally with the substrate (20).

[0365] (Note 15)

[0366] The semiconductor light emitting device according to Supplementary Note 14 further comprises:

[0367] a first internal wiring and a second internal wiring, the first internal wiring and the second internal wiring being arranged inside the light receiving base (70) and the substrate (20),

[0368] wherein the first internal wiring is configured to electrically connect the first mounting electrode and the first back electrode, and

[0369] The second internal wiring is configured to electrically connect the second mounting electrode and the second back surface electrode.

[0370] (Note 16)

[0371] The semiconductor light emitting device according to Supplementary Note 14 or 15, wherein the light receiving base (70) and the substrate (20) are formed of ceramics.

[0372] (Note 17)

[0373] The semiconductor light emitting device according to any one of supplementary notes 1 to 16, further comprising:

[0374] A third front electrode is arranged on the front side (21) of the substrate; and

[0375] a fourth front electrode, arranged on the front surface (21) of the substrate and spaced apart from the third front electrode,

[0376] Wherein, the edge light emitting element (30) is electrically connected to the third front electrode.

[0377] (Note 18)

[0378] The semiconductor light emitting device according to Supplementary Note 17, wherein the substrate (20) includes a substrate back surface facing the side opposite to the substrate front surface (21), and further includes:

[0379] A third back electrode disposed on the back surface of the substrate and electrically connected to the third front electrode; and

[0380] A fourth back electrode is disposed on the back side of the substrate and is electrically connected to the fourth front electrode.

[0381] (Note 19)

[0382] The semiconductor light emitting device according to Supplement 17 or 18, wherein the edge light emitting element (30) comprises:

[0383] A front side of the light emitting element facing the same direction as the front side (21) of the substrate;

[0384] a back side of the light emitting element, facing a direction opposite to the front side of the light emitting element;

[0385] A first light emitting electrode formed on the front surface of the light emitting element; and

[0386] A second light-emitting electrode is formed on the back side of the light-emitting element.

[0387] Wherein, the second light emitting electrode is electrically connected to the third front electrode.

[0388] (Note 20)

[0389] The semiconductor light emitting device according to Supplementary Note 19 further comprises:

[0390] The second wire is configured to electrically connect the first light emitting electrode and the fourth front electrode.

[0391] (Note 21)

[0392] The semiconductor light emitting device according to Supplement 19 or 20, further comprising:

[0393] A light-emitting base is arranged on the third front electrode,

[0394] Wherein, the edge light-emitting element (30) is arranged on the light-emitting base.

[0395] (Note 22)

[0396] A semiconductor light emitting device according to Note 21, wherein the light receiving element (40) is arranged so that the emission area of ​​the second element end face of the edge light emitting element (30) is located between the two ends of the light receiving portion in the thickness direction.

[0397] (Note 23)

[0398] The semiconductor light emitting device according to Supplement 21 or 22, wherein the light emitting base is formed of a conductive material, and

[0399] Wherein, the second light emitting electrode is electrically connected to the third front electrode through the light emitting base.

[0400] (Note 24)

[0401] The semiconductor light emitting device according to Supplementary Note 21 or 22, wherein the light emitting base includes a base formed of an insulating material, and a through wiring formed of a conductive material and configured to penetrate the base, and

[0402] Wherein, the second light emitting electrode is electrically connected to the third front electrode through a through wiring.

[0403] (Note 25)

[0404] A semiconductor light-emitting device according to any one of Notes 19 to 24, wherein the edge light-emitting element (30) includes a plurality of emission regions on the end face of the second element and a plurality of the first light-emitting electrodes arranged on the front face of the light-emitting element.

[0405] (Note 26)

[0406] A semiconductor light emitting device according to any one of supplementary notes 19 to 24, wherein the edge light emitting element (30) comprises an emission region on the second element end face,

[0407] The semiconductor light emitting device further comprises a plurality of edge light emitting elements (30), and

[0408] Wherein, the edge light emitting element (30) is arranged in a second direction intersecting the first direction when viewed from the thickness direction.

[0409] (Note 27)

[0410] The semiconductor light emitting device according to Supplement 25 or 26, wherein a plurality of the fourth front electrodes are arranged on the front surface (21) of the substrate, and

[0411] The semiconductor light emitting device further includes a plurality of wires, and the plurality of wires are configured to electrically connect the plurality of first light emitting electrodes and the plurality of fourth front electrodes.

[0412] (Note 28)

[0413] A semiconductor light-emitting device according to Note 27, wherein the fourth front electrode includes a plurality of intermediate electrodes, and when viewed from the thickness direction, the plurality of intermediate electrodes are arranged between the edge light-emitting element (30) and the light receiving base (70).

[0414] (Note 29)

[0415] The semiconductor light emitting device according to Supplementary Note 27, wherein the fourth front electrode includes a plurality of end electrodes, and when viewed from the thickness direction, the plurality of end electrodes are arranged to sandwich the light receiving base (70) and the light receiving element (40) between the end electrodes and the edge light emitting element (30), and

[0416] The wires electrically connecting the plurality of end electrodes and the first light emitting electrode are arranged to pass through the side opposite to the substrate (20) relative to the light receiving element (40) in the thickness direction.

[0417] (Note 30)

[0418] A semiconductor light emitting device according to Supplementary Note 28 or 29, wherein the light receiving element (40) is configured to receive light emitted from the second element end faces of the plurality of edge light emitting elements (30).

[0419] (Note 31)

[0420] The semiconductor light emitting device according to Supplementary Note 28 or 29, further comprising:

[0421] The plurality of light receiving elements (40) are configured to receive light emitted from the plurality of edge light emitting elements (30).

[0422] (Note 32)

[0423] A semiconductor light emitting device according to any one of Supplementary Notes 1 to 31, wherein the edge light emitting element (30) is configured so that the output of light emitted from the second element end face is smaller than the output of light emitted from the first element end face.

[0424] (Note 33)

[0425] The semiconductor light emitting device according to any one of supplementary notes 1 to 32, further comprising:

[0426] A cover member is provided on the substrate front surface (21) and is configured to accommodate the edge light emitting element (30) and the light receiving element (40).

[0427] (Note 34)

[0428] A semiconductor light emitting device according to Note 33, wherein the cover member includes a main body configured to accommodate the edge light emitting element (30) and the light receiving element (40), and includes an opening through which the laser beam emitted from the end surface of the first element passes.

[0429] (Note 35)

[0430] The semiconductor light emitting device according to Supplementary Note 34, wherein the cover member includes a window member configured to close the opening, and

[0431] Wherein, the window member is formed of a material transparent to the laser beam.

[0432] (Note 36)

[0433] The semiconductor light emitting device according to Supplement 34 or 35, wherein the main body is formed of a material having a light-shielding property.

[0434] (Note 37)

[0435] The semiconductor light emitting device according to Supplement 34 or 35, wherein the main body is formed of a light-transmitting material.

[0436] (Note 38)

[0437] The semiconductor light emitting device according to any one of supplementary notes 1 to 32, further comprising:

[0438] A sealing member is configured to seal at least a portion of the edge light emitting element (30) and the light receiving element (40).

[0439] (Note 39)

[0440] The semiconductor light emitting device according to Supplementary Note 38, wherein the first element end face is exposed from the sealing member.

[0441] (Note 40)

[0442] The semiconductor light emitting device according to Supplementary Note 38 or 39, wherein the sealing member is formed of a material that blocks light in a wavelength range including visible light, and

[0443] The edge light emitting element (30) is configured to emit light within a wavelength range that is transmitted through the sealing member.

[0444] (Note 41)

[0445] The semiconductor light emitting device according to any one of Supplementary Notes 38 to 40, wherein the sealing member includes a sealing surface facing the same side as the substrate front surface (21), and

[0446] Wherein, when viewed from the thickness direction, a light shielding layer is provided between the second element end face on the sealing surface and the front face of the light receiving element (40).

[0447] (Note 42)

[0448] The semiconductor light emitting device according to any one of Supplementary Notes 38 to 41, further comprising:

[0449] A plurality of diffusing materials are disposed in the sealing member and are configured to diffuse the laser beam emitted by the edge light emitting element (30).

[0450] (Note 43)

[0451] A semiconductor light-emitting device according to Note 38, wherein the sealing member includes a frame-shaped body arranged on the front side (21) of the substrate and configured to surround the edge light-emitting element (30) and the light-receiving element (40), and a sealing resin accommodated in the body and configured to seal the edge light-emitting element (30) and the light-receiving element (40).

[0452] (Note 44)

[0453] A semiconductor light emitting device according to any one of Notes 1 to 43, wherein the distance in the first direction between the second element end face and the front face of the light receiving element (40) is greater than or equal to 0.5 mm and less than or equal to 2.6 mm.

[0454] (Note 45)

[0455] A semiconductor light emitting device according to any one of Supplementary Notes 1 to 44, wherein the light receiving base (70) is formed in a triangular shape when viewed from a second direction intersecting the thickness direction and the first direction.

[0456] (Note 46)

[0457] A semiconductor light emitting device according to any one of Supplementary Notes 1 to 44, wherein the light receiving base (70) is formed in a square shape when viewed from a second direction intersecting the thickness direction and the first direction.

[0458] (Note 47)

[0459] A semiconductor light emitting device according to any one of Supplementary Notes 1 to 44, wherein the light receiving base (70) is formed in a rectangular shape when viewed from a second direction intersecting the thickness direction and the first direction.

[0460] The above description is exemplary only. Those skilled in the art will recognize that, in addition to the combinations and substitutions listed to describe the technology of the present disclosure, more possible combinations and substitutions may be adopted. The present disclosure is intended to cover all alternatives, variations and modifications that fall within the scope of the present disclosure (including claims).

[0461] Although certain embodiments have been described, these embodiments are presented by way of example only and are not intended to limit the scope of the present disclosure. In fact, the embodiments described herein may be embodied in a variety of other forms. In addition, various omissions, substitutions, and changes may be made to the embodiments described herein without departing from the spirit of the present disclosure. The attached claims and their equivalents are intended to cover such forms or modifications that will fall within the scope and spirit of the present disclosure.

[0462] 10, 10A-10R: Semiconductor light-emitting device

[0463] 20: Substrate

[0464] 21: Front side of substrate

[0465] 22: Back side of substrate

[0466] 23-26: Sides of the first to fourth substrates

[0467] 30: Edge lighting element

[0468] 31: Front of the light emitting element

[0469] 32: Back side of light emitting element

[0470] 33: End face of first element

[0471] 33A: Launch area

[0472] 34: Second component end face

[0473] 34A: Launch area

[0474] 37: First light-emitting electrode

[0475] 38: Second light-emitting electrode

[0476] 40: Light receiving element

[0477] 41: Front of light receiving element

[0478] 42: Back side of light receiving element

[0479] 43: Light receiving unit

[0480] 44: First light receiving electrode

[0481] 45: Second light receiving electrode

[0482] 51S~54S: First to fourth front electrodes

[0483] 51R to 54R: First to fourth back electrodes

[0484] 51V to 54V: 1st to 4th vias

[0485] 60: Luminous base

[0486] 61: Front of the base

[0487] 62: Back of the base

[0488] 70: Light receiving base

[0489] 71: Mounting surface

[0490] 72: Mounted on the back

[0491] 73: Mounting surface

[0492] 74: Upper surface

[0493] 75: Side

[0494] 76: Side

[0495] 77: First electrode

[0496] 78: Second carrying electrode

[0497] 80: Cover member

[0498] 81: Main body

[0499] 82: Opening

[0500] 83-85: Sidewall

[0501] 86: Up the wall

[0502] 87: Window widget

[0503] 88: Sealed Space

[0504] 91: Conductive adhesive

[0505] 92: Adhesive

[0506] 93, 94: Conductive adhesive

[0507] 120: Substrate

[0508] 140: Light receiving element

[0509] 141: first light receiving electrode

[0510] 142: Second light receiving electrode

[0511] 151S: First front electrode

[0512] 152S: Second front electrode

[0513] 170: Light receiving base

[0514] 180: Cover member

[0515] 191: Light shielding layer

[0516] 192: Diffusion material

[0517] 220: Substrate

[0518] 221: Front side of substrate

[0519] 222: Back side of substrate

[0520] 223-226: Sides of the first to fourth substrates

[0521] 230: Edge lighting element

[0522] 231: Front of light emitting element

[0523] 232: Back side of light emitting element

[0524] 233: End face of first element

[0525] 234: Second component end face

[0526] 235, 236: Component side

[0527] 2371-2378: First light-emitting electrode

[0528] 238: Second light-emitting electrode

[0529] 240: Light receiving element

[0530] 241: Front side of light receiving element

[0531] 242: Back side of light receiving element

[0532] 243: Light receiving unit

[0533] 244: first light receiving electrode

[0534] 245: Second light receiving electrode

[0535] 250R: Back common electrode

[0536] 250S: Positive common electrode

[0537] 251S~254S: 1st to 4th front electrodes

[0538] 251R to 254R: 1st to 4th back electrodes

[0539] 251V to 254V: 1st to 4th vias

[0540] 260: Luminous base

[0541] 261: Front of the base

[0542] 262: Back of the base

[0543] 270: Light receiving base

[0544] 280: Sealing member

[0545] 281: Seal front

[0546] 282-285: 1st to 4th sealing sides

[0547] 370: Light receiving base

[0548] 371: First internal wiring

[0549] 372: Second internal wiring

[0550] 380: Sealing member

[0551] 381: Cover member

[0552] 382: Sealing resin

[0553] 470: Light receiving base

[0554] 471: First electrode

[0555] 472: Second carrying electrode

[0556] 480: Sealing member

[0557] 481: Main body

[0558] 482: Sealing resin

[0559] 551 to 558: first to eighth auxiliary electrodes

[0560] 561 to 568: first to eighth auxiliary electrodes

[0561] 570: Light receiving base

[0562] 571: First electrode

[0563] 572: Second carrying electrode

[0564] 580: Cover member

[0565] 581: Main body

[0566] 582: Opening

[0567] 583-585: Sidewall

[0568] 586: Up the wall

[0569] 587: Window widget

[0570] 588: Sealed Space

[0571] 671: First light receiving base

[0572] 672: Second light receiving base

[0573] 770: Light receiving base

[0574] 771: Mounting surface

[0575] 772: Mounted on the back

[0576] 773: Mounting surface

[0577] 774: Upper surface

[0578] 775,776: Side

[0579] 777: First electrode

[0580] 778: Second carrying electrode

[0581] 2371-2378: First light-emitting electrode

[0582] D1: Distance

[0583] L1: First laser beam

[0584] L2: Second laser beam

[0585] W1, W2: Wire

Claims

1. A semiconductor light emitting device, comprising: A substrate, including a front side of the substrate; an edge light emitting element mounted on the front surface of the substrate, the edge light emitting element comprising a first element end surface facing a first direction intersecting a thickness direction perpendicular to the front surface of the substrate and a second element end surface facing a direction opposite to the first element end surface, the edge light emitting element being configured so as to emit light from the first element end surface and the second element end surface; a light receiving base, disposed on the front surface of the substrate and comprising a mounting surface facing the end surface of the second element; and The light receiving element is mounted on the mounting surface and includes a light receiving portion which is arranged on the front surface of the light receiving element and faces the second element end surface.

2. The semiconductor light emitting device according to claim 1, wherein: The light receiving base has insulating properties.

3. The semiconductor light emitting device according to claim 1, wherein: The light receiving base is formed so that the mounting surface is perpendicular to the substrate front surface.

4. The semiconductor light emitting device according to claim 1, wherein: The light receiving base is formed such that the mounting surface extends away from the second element end surface as the mounting surface extends away from the substrate front surface in the thickness direction.

5. The semiconductor light emitting device according to claim 4, wherein: The angle of the mounting surface relative to the front surface of the substrate is greater than or equal to 60 degrees and less than 90 degrees.

6. The semiconductor light emitting device according to claim 1, wherein: The substrate includes a substrate back surface facing a side opposite to the substrate front surface, The semiconductor light emitting device further comprises a first back electrode and a second back electrode disposed on the back surface of the substrate, and Wherein, the light receiving element is electrically connected between the first back electrode and the second back electrode.

7. The semiconductor light emitting device according to claim 6, wherein: The light receiving element includes a first light receiving electrode provided on the light receiving element front surface, a light receiving element rear surface facing a side opposite to the light receiving element front surface, and a second light receiving electrode provided on the light receiving element rear surface.

8. The semiconductor light emitting device according to claim 6, wherein: The light receiving element includes a light receiving element rear surface facing a side opposite to the light receiving element front surface, and a first light receiving electrode and a second light receiving electrode provided on the light receiving element rear surface.

9. The semiconductor light emitting device according to claim 7, wherein: The light receiving base includes a first mounting electrode provided on the mounting surface and electrically connected to the first light receiving electrode, and a second mounting electrode provided on the mounting surface and electrically connected to the second light receiving electrode.

10. The semiconductor light emitting device according to claim 9, further comprising: a first front electrode, disposed on the front surface of the substrate and electrically connected to the first back electrode; and A second front electrode is disposed on the front surface of the substrate and is electrically connected to the second back electrode, wherein the first mounting electrode is electrically connected to the first front electrode, and Wherein, the second mounting electrode is electrically connected to the second front electrode.

11. The semiconductor light emitting device according to claim 10, wherein: The light receiving base is disposed across the first front electrode and the second front electrode.

12. The semiconductor light emitting device according to claim 10, wherein: The light receiving base is disposed on the substrate front surface in such a manner as not to overlap with the first front electrode and the second front electrode when viewed from the thickness direction.

13. The semiconductor light emitting device according to claim 10, further comprising: The first wire is configured to electrically connect the first light receiving electrode and the second mounting electrode.

14. The semiconductor light emitting device according to claim 9, wherein: The light receiving base is formed integrally with the substrate.

15. The semiconductor light emitting device according to claim 14, further comprising: A first internal wiring and a second internal wiring are provided inside the light receiving base and the substrate, wherein the first internal wiring is configured to electrically connect the first mounting electrode and the first back electrode, and The second internal wiring is configured to electrically connect the second mounting electrode and the second back surface electrode.

16. The semiconductor light emitting device according to claim 1, further comprising: A third front electrode is arranged on the front surface of the substrate; and a fourth front electrode, disposed on the front surface of the substrate and spaced apart from the third front electrode, Wherein, the edge light emitting element is electrically connected to the third front electrode.

17. The semiconductor light emitting device according to claim 16, wherein: The substrate includes a substrate back surface facing a side opposite to the substrate front surface, and the semiconductor light emitting device further includes: A third back electrode disposed on the back surface of the substrate and electrically connected to the third front electrode; and A fourth back electrode is disposed on the back side of the substrate and is electrically connected to the fourth front electrode.

18. The semiconductor light emitting device according to claim 16, wherein: The edge light emitting element comprises: A front side of the light emitting element faces the same direction as the front side of the substrate; a back side of the light emitting element, facing a direction opposite to the front side of the light emitting element; A first light emitting electrode formed on the front surface of the light emitting element; and A second light-emitting electrode is formed on the back side of the light-emitting element. Wherein, the second light emitting electrode is electrically connected to the third front electrode.

19. The semiconductor light emitting device according to claim 18, further comprising: The second wire is configured to electrically connect the first light emitting electrode and the fourth front electrode.

20. The semiconductor light emitting device according to claim 18, further comprising: A light-emitting base is arranged on the third front electrode, Wherein, the edge light-emitting element is arranged on the light-emitting base.

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