Pipeline heating device, thermal atomic deposition gas supply system and thermal atomic deposition gas supply equipment

Abstract

The invention belongs to the technical field of thermal atomic deposition, and discloses a pipeline heating device and a thermal atomic deposition gas supply system and equipment.The pipeline heating device comprises first heaters and second heaters, the first heaters are arranged in all temperature zones of a linear section of a pipeline, and the second heaters are arranged in all temperature zones of the linear section of the pipeline; the first heater is configured to uniformly heat the pipeline in the temperature zone corresponding to the first heater, the temperature zone arranged at the corner section of the pipeline is provided with a second heater, and the second heater is configured to heat the corner section of the pipeline. The second heater is matched with the first heater, so that cold-point-free heating of the pipeline communicated between the liquid source and the distribution gas path can be realized, and meanwhile, the temperature of the pipeline communicated between the liquid source and the distribution gas path can be uniformly increased from one side close to the liquid source to one side close to the distribution gas path; therefore, the reaction gas can be stably conveyed to the distribution gas path.

Description

Technical Field

[0001] The invention relates to the technical field of thermal atomic deposition, and in particular to a pipeline heating device, a thermal atomic deposition gas supply system and equipment. Background Art

[0002] Atomic deposition is a technique in which two or more gaseous precursors are alternately introduced into a reaction chamber and chemically adsorbed and reacted on a deposition substrate to form a deposited film.

[0003] At present, the gas supply system of thermal atomic deposition equipment generally transports precursors into the reaction chamber by means of a carrier gas carrying a reaction solution. Specifically, the gas supply system is generally divided into two parts. One part is responsible for ventilating a liquid source containing a reaction solution, and the other part is responsible for evenly distributing the reaction gas flowing out of the liquid source into different reaction chambers. The reaction gas is the carrier gas carrying the reaction solution.

[0004] Based on the above, the gas source and the liquid source, as well as the liquid source and the reaction chamber are connected through a gas path, and a control element for controlling the flow rate and the opening and closing of the gas path is arranged on the gas path, and the gas path between the liquid source and the reaction chamber also includes a distribution gas path to evenly distribute the reaction gas flowing out of the liquid source to different reaction chambers. In order to send the reaction gas flowing out of the liquid source into the distribution gas path, a heating device is generally arranged on the gas path between the liquid source and the distribution gas path in the prior art. The conventional heating device is generally a silicone heating sleeve, which is arranged on the outer periphery of the pipeline forming the gas path, and a plurality of heating coils are arranged on the silicone heating sleeve, and the plurality of heating coils are arranged at intervals along the extension direction of the pipeline, so that the temperature of the pipeline is gradually increased from the side close to the liquid source to the side close to the distribution gas path, thereby ensuring sufficient gas pressure on the gas path.

[0005] However, due to the spacing between two adjacent heating rings, the pipeline cannot be heated evenly, that is, the pipeline temperature cannot rise evenly from the side close to the liquid source to the side close to the distribution gas path, which in turn causes the reaction gas to be unable to be stably delivered to the distribution gas path. In addition, the silicone heating sleeve cannot be arranged at the corner of the pipeline, resulting in the corner of the pipeline being unable to be heated, that is, cold spots will appear on the pipeline, which further causes the reaction gas to be unable to be stably delivered to the distribution gas path.

[0006] Therefore, the above problems need to be solved urgently. Summary of the invention

[0007] The purpose of the present invention is to provide a pipeline heating device, a thermal atomic deposition gas supply system and equipment to solve the problem that the temperature of the pipeline between the liquid source and the distribution gas path cannot be uniformly increased from the side close to the liquid source to the side close to the distribution gas path, and the corners of the pipeline cannot be heated, that is, cold spots will appear on the pipeline, resulting in the problem that the reaction gas cannot be stably transported to the distribution gas path.

[0008] To achieve this object, the present invention adopts the following technical solutions:

[0009] In one aspect, the present invention provides a pipeline heating device, wherein the pipeline heating device is provided with a plurality of temperature zones, wherein the plurality of temperature zones are continuously arranged along the extension direction of the pipeline, and the pipeline heating device comprises:

[0010] a first heater, wherein all the temperature zones disposed in the straight section of the pipeline are provided with the first heater, and the first heater is configured to uniformly heat the pipeline in the corresponding temperature zone; and

[0011] A second heater is provided in the temperature zone of the corner section of the pipeline, and the second heater is configured to uniformly heat the corner section of the pipeline.

[0012] Another aspect of the present invention further provides a thermal atomic deposition gas supply system, comprising:

[0013] A gas circuit on-off control area, wherein the gas circuit on-off control area is provided with a first gas circuit, one end of the first gas circuit is connected to a gas source, and the first gas circuit is provided with a first valve, and the first valve can control the on-off of the first gas circuit;

[0014] A flow control area, wherein the flow control area and the gas path on-off control area are arranged at intervals in the vertical direction, a second gas path and a control unit are arranged in the flow control area, two ends of the second gas path are respectively connected to the liquid source and the first gas path, the second gas path is provided with the control unit, and the control unit can control the supply amount of the carrier gas supplied from the second gas path to the liquid source;

[0015] A gas circuit pipe laying area is located between the gas circuit on-off control area and the flow control area, and is located on one side of the gas circuit on-off area and the flow control area. A third gas circuit is arranged in the gas circuit pipe laying area, and the third gas circuit is connected between the first gas circuit and the second gas circuit.

[0016] a distribution gas path placement area, wherein the distribution gas path placement area is provided with a distribution gas path, the distribution gas path is connected to the liquid source, and can evenly transport the reaction gas flowing out of the liquid source to different reaction chambers, and the gas path connected between the distribution gas path and the liquid source is provided with the pipeline heating device as described above; and

[0017] The liquid source placement area, the gas circuit on-off control area, the flow control area, the gas circuit piping area and the distribution gas circuit placement area together form the liquid source placement area, and the liquid source is placed in the liquid source placement area.

[0018] Preferably, the flow control area is provided with at least two second gas paths, the control unit is connected in series on the second gas path, and all the second gas paths are arranged in parallel;

[0019] The flow control area is also provided with a fifth gas circuit, which includes a first passage and a second passage, the control unit is connected between the first passage and the second passage, the first passage is connected to the third gas circuit, the second passage includes a first branch, a second branch and a third branch, one end of the first branch and the second branch are both connected to the control unit, a second valve is provided on the first branch, the second valve can control the on and off of the first branch, the other end of the first branch forms a first interface, the other end of the second branch is connected to the distribution gas circuit through a sixth gas circuit, a third valve is provided on the second branch, the third valve can control the on and off of the second branch, one end of the third branch is connected to the second branch, and the connection between the third branch and the second branch is located between the connection between the second branch and the control unit and the third valve, a fourth valve is provided on the third branch, the fourth valve can control the on and off of the third branch, the other end of the third branch forms a second interface, and the liquid source can be connected between the first interface and the second interface.

[0020] Preferably, the second passage also includes a fourth branch, both ends of the fourth branch are connected to the first branch and the third branch respectively, the connection point between the fourth branch and the first branch is located between the second valve and the first interface, the connection point between the fourth branch and the third branch is located between the fourth valve and the second interface, and a fifth valve is provided on the fourth branch, and the fifth valve can control the on and off of the fourth branch.

[0021] Preferably, the thermal atomic deposition gas supply system further comprises a gas distribution device, the liquid source connected to the second gas path is connected to the distribution gas path via a seventh gas path, and the gas distribution device can connect the seventh gas path and the second gas path.

[0022] Preferably, the portion of the seventh gas path located downstream of the gas distribution device is provided with the pipeline heating device, and the pipeline heating device can heat the portion of the seventh gas path located downstream of the gas distribution device, and the portion of the seventh gas path located downstream of the gas distribution device is provided with a plurality of temperature zones, and the plurality of temperature zones are continuously arranged along the extension direction of the seventh gas path;

[0023] Of the two adjacent temperature zones, the temperature of the temperature zone close to the distribution gas path is greater than the temperature of the temperature zone far from the distribution gas path.

[0024] Preferably, the control unit comprises a mass flow meter and a sixth valve, the mass flow meter and the sixth valve are connected in series to the second gas path, and the sixth valve can control the on-off of the second gas path.

[0025] Preferably, the gas source can supply gas to at least two of the liquid sources through at least two of the second gas circuits, the second gas circuit includes a third passage and a fourth passage, the third passage is connected to the first gas circuit, the control unit is arranged on the third passage, the fourth passage includes a fifth branch and a sixth branch, one end of the fifth branch and the sixth branch are both connected to the third passage, the other end of the fifth branch is connected to the gas distribution device, the other end of the sixth branch is connected to the liquid source, and a seventh valve is arranged on the sixth branch, and the seventh valve can control the opening and closing of the sixth branch.

[0026] Preferably, all of the second gas paths are located between at least two of the seventh gas paths.

[0027] On the other hand, the present invention also provides a thermal atomic deposition device, including a modular gas system, a reaction chamber and the thermal atomic deposition gas supply system as described above, wherein the reaction chamber has at least two reaction chambers, the distribution gas path is connected to the reaction chambers in the reaction chamber through the modular gas system, the modular gas system is arranged in the reaction chamber at a position adjacent to the reaction chamber, and the thermal atomic deposition gas supply system is used to uniformly introduce reaction gas into different reaction chambers.

[0028] Beneficial effects of the present invention: In the present invention, the pipeline connected between the liquid source and the reaction chamber is heated by the first heater and the second heater, wherein the first heater is arranged on the straight section of the pipeline, and the straight section of the pipeline is continuously arranged with a plurality of first heaters along its extension direction, thereby forming a plurality of temperature zones on the straight section of the pipeline. Since the first heater can uniformly heat the pipeline in the corresponding temperature zone, the pipeline heating device in the present invention can achieve a uniform increase in the temperature of the straight section of the pipeline from the side close to the liquid source to the side close to the distribution gas path. The second heater is arranged on the corner section of the pipeline. On the one hand, the second heater cooperates with the first heater to achieve cold spot-free heating of the pipeline connected between the liquid source and the distribution gas path. On the other hand, the second heater can heat the corner section of the pipeline, thereby achieving a uniform increase in the temperature of the pipeline connected between the liquid source and the distribution gas path from the side close to the liquid source to the side close to the distribution gas path, thereby ensuring that the reaction gas can be stably transported to the distribution gas path.

[0029] A pipeline heating device is provided on the gas path connecting the distribution gas path and the liquid source in the thermal atomic deposition gas supply system, thereby realizing cold-spot-free heating of the pipeline connecting the liquid source and the distribution gas path, and at the same time realizing that the temperature of the pipeline connecting the liquid source and the distribution gas path is uniformly increased from the side close to the liquid source to the side close to the distribution gas path, thereby ensuring that the reaction gas can be stably transported to the distribution gas path. The thermal atomic deposition gas supply system is divided into multiple modules according to function, and the multiple modules jointly realize the supply of reaction gas. The thermal atomic deposition gas supply system arranges the multiple modules in partitions, so as to simplify the gas path, so that the pipeline connected between the liquid source and the distribution gas path placement area can be arranged to extend in the vertical direction, that is, the pipeline between the liquid source and the distribution gas path placement area has no corners, and the corners only exist at the intersection of the pipeline arranged in the distribution gas path placement area and connected to the distribution gas path and the pipeline connected between the liquid source and the distribution gas path placement area. Reducing the number of corners can further ensure that the pipeline connected between the liquid source and the distribution gas path is heated without cold spots, thereby further ensuring that the reaction gas can be stably transported to the distribution gas path.

[0030] A pipeline heating device is provided on the seventh gas path in the thermal atomic deposition equipment for conveying reaction gas to the distribution gas path, thereby realizing cold-spot-free heating of the pipeline connecting the liquid source and the distribution gas path, and at the same time realizing that the temperature of the pipeline connecting the liquid source and the distribution gas path is uniformly increased from the side close to the liquid source to the side close to the distribution gas path, thereby ensuring that the reaction gas can be stably conveyed to the distribution gas path. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic structural diagram of a pipeline heating device in an embodiment of the present invention;

[0032] Figure 2 is a schematic structural diagram of a thermal atomic deposition gas supply system in a second embodiment of the present invention;

[0033] Figure 3 is a gas circuit schematic diagram of the seventh gas circuit and the distribution gas circuit in the second embodiment of the present invention;

[0034] Figure 4 Schematic diagram of the gas circuit of the second gas circuit, the control unit, the seventh gas circuit and the gas distribution device in the second embodiment of the present invention;

[0035] Figure 5 It is a schematic diagram of the positions of the second gas path, the seventh gas path and the gas distribution device in the second embodiment of the present invention.

[0036] In the figure:

[0037] 110, first heater; 111, heating wire; 112, silicone protective cover;

[0038] 120. A second heater;

[0039] 210, gas circuit on-off control area; 211, gas source; 212, first gas circuit;

[0040] 220, flow control area; 221, second gas path; 2211, third path; 2212, fourth path; 22121, fifth branch; 22122, sixth branch; 22123, seventh valve; 222, control unit;

[0041] 230. Gas pipe layout area;

[0042] 240, distribution gas path placement area; 241, seventh branch; 242, eighth valve;

[0043] 250, liquid source placement area; 251, liquid source; 252, seventh gas path; 253, ninth valve;

[0044] 260. Gas distribution device; 261. Tenth valve; 262. Eleventh valve. DETAILED DESCRIPTION

[0045] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0046] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0048] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operate in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0049] Embodiment 1

[0050] This embodiment provides a pipeline heating device, which is provided with a plurality of temperature zones, which are arranged continuously along the extension direction of the pipeline. In two adjacent temperature zones, the temperature of the temperature zone arranged near the downstream of the pipeline is greater than the temperature of the temperature zone arranged near the upstream of the pipeline. Figure 1 The pipeline heating device includes a first heater 110 and a second heater 120. All temperature zones arranged in the straight section of the pipeline are provided with the first heater 110, and the first heater 110 is configured to uniformly heat the pipeline in the corresponding temperature zone. The temperature zone arranged in the corner section of the pipeline is provided with the second heater 120, and the second heater 120 is configured to heat the corner section of the pipeline.

[0051] In this embodiment, the pipeline connected between the liquid source 251 and the distribution gas path is heated by the first heater 110 and the second heater 120, wherein the first heater 110 is arranged on the straight section of the pipeline, and the straight section of the pipeline is continuously arranged with a plurality of first heaters 110 along its extension direction, thereby forming a plurality of temperature zones on the straight section of the pipeline. Since the first heater 110 can uniformly heat the pipeline in the corresponding temperature zone, the pipeline heating device in this embodiment can achieve a uniform increase in the temperature of the straight section of the pipeline from the side close to the liquid source 251 to the side close to the distribution gas path. The second heater 120 is arranged on the corner section of the pipeline. On the one hand, the second heater 120 cooperates with the first heater 110 to achieve cold spot-free heating of the pipeline connected between the liquid source 251 and the distribution gas path. On the other hand, the second heater 120 can heat the corner section of the pipeline, thereby achieving a uniform increase in the temperature of the pipeline connected between the liquid source 251 and the distribution gas path from the side close to the liquid source 251 to the side close to the distribution gas path, thereby ensuring that the reaction gas can be stably transported to the distribution gas path.

[0052] like Figure 1 As shown, the first heater 110 and the second heater 120 both include a heating wire 111 spirally wound around the outer circumference of the pipe along the extension direction of the pipe and a silicone insulation sleeve wrapped around the outer circumference of the heating wire 111. The heating wire 111 can evenly heat the pipe, while the silicone insulation sleeve can prevent heat from being lost to the air.

[0053] Of course, in other optional embodiments, the heating wire 111 can also be wound around the outer circumference of the pipe in any other shape such as a U-shape, and this is not specifically limited in the present embodiment.

[0054] In addition, the second heater 120 may be a heating wire, a heating rod, or a customized block heater, etc., which is not specifically limited in this embodiment.

[0055] Embodiment 2

[0056] See also Figures 2 to 5The present embodiment provides a thermal atomic deposition gas supply system, which includes a gas on-off control area 210, a flow control area 220, a gas pipe layout area 230, a distribution gas path placement area 240 and a liquid source placement area 250, wherein the flow control area 220 and the gas on-off control area 210 are arranged at intervals in the vertical direction, the gas pipe layout area 230 is located between the gas on-off control area 210 and the flow control area 220, and is located on one side of the gas on-off area and the flow control area 220, and the distribution gas path placement area 240 is located on the other side of the flow control area 220, the gas on-off control area 210, the flow control area 220, the gas pipe layout area 230 and the distribution gas path placement area 240 together form a liquid source placement area 250, and the liquid source 251 is placed in the liquid source placement area 250.

[0057] Specifically, the gas circuit on-off control area 210 is provided with a first gas circuit 212, one end of the first gas circuit 212 is connected to the gas source 211, and the first gas circuit 212 is provided with a first valve, and the first valve can control the on-off of the first gas circuit 212, the flow control area 220 and the gas circuit on-off control area 210 are arranged in a vertical direction, and the flow control area 220 is provided with a second gas circuit 221 and a control unit 222, and the two ends of the second gas circuit 221 are respectively connected to the liquid source 251 and the first gas circuit 212, and the second gas circuit 221 is provided with a control unit 222, the control unit 222 can control the supply amount of the carrier gas supplied from the second gas circuit 221 to the liquid source 251, the gas circuit piping area 230 is located between the gas circuit on-off control area 210 and the flow control area 220, and is located on one side of the gas circuit on-off area and the flow control area 220, a third gas circuit is arranged in the gas circuit piping area 230, and the third gas circuit is connected between the first gas circuit 212 and the second gas circuit 221, that is, the carrier gas flowing out of the gas source 211 flows through the first gas circuit 212, the third gas circuit and the second gas circuit 221 in sequence until the liquid source 251.

[0058] The distribution gas path placement area 240 is provided with a distribution gas path, which is connected to the liquid source 251 and can evenly transport the reaction gas flowing out of the liquid source 251 to different reaction chambers. The gas path on-off control area 210, the flow control area 220, the gas path pipe layout area 230 and the distribution gas path placement area 240 together form the liquid source placement area 250, and the liquid source 251 is placed in the liquid source placement area 250.

[0059] In this embodiment, a pipeline heating device as described in Example 1 is provided on the gas path connecting the distribution gas path and the liquid source 251, so that cold-spot-free heating of the pipeline connecting the liquid source 251 and the distribution gas path can be achieved, and at the same time, the temperature of the pipeline connecting the liquid source 251 and the distribution gas path can be uniformly increased from the side close to the liquid source 251 to the side close to the distribution gas path, thereby ensuring that the reaction gas can be stably transported to the distribution gas path.

[0060] Based on the above, the thermal atomic deposition gas supply system in this embodiment is divided into multiple modules according to function, and multiple modules jointly realize the supply of reaction gas, and the thermal atomic deposition gas supply system arranges multiple modules in partitions, so as to simplify the gas path, so that the pipeline connected between the liquid source 251 and the distribution gas path placement area 240 can be arranged to extend in the vertical direction, that is, the pipeline between the liquid source 251 and the distribution gas path placement area 240 has no corners, and the corners only exist at the intersection of the pipeline arranged in the distribution gas path placement area 240 and connected to the distribution gas path and the pipeline connected between the liquid source 251 and the distribution gas path placement area 240. Reducing the number of corners can further ensure that the pipeline connected between the liquid source 251 and the distribution gas path is heated without cold spots, thereby further ensuring that the reaction gas can be stably transported to the distribution gas path.

[0061] In addition, in the prior art, since two or more gaseous precursors need to be introduced alternately into the reaction chamber, the gas supply system needs to be provided with at least two liquid sources, and all liquid sources need to be connected to the gas source and the reaction chamber with a gas path, resulting in a large number of gas path pipelines in the gas supply system of the thermal atomic deposition equipment. The gas path and various control elements on the gas path of the gas supply system of the thermal atomic deposition equipment in the prior art are arranged in a messy manner. If the liquid source is placed in the column space formed by the gas path and the arrangement area of ​​each control element, the placement area of ​​the liquid source is limited, resulting in high difficulty in placing the liquid source. In order to reduce the difficulty in placing the liquid source, it is necessary to place the liquid source outside the column space formed by the gas path and the arrangement area of ​​each control element. For this purpose, it is necessary to plan a separate placement area for the liquid source outside the column space formed by the gas path and the arrangement area of ​​each control element, resulting in a large space occupied by the gas supply system of the thermal atomic deposition equipment.

[0062] The thermal atomic deposition gas supply system in the present embodiment arranges the multiple modules in partitions, thereby saving placement space for the liquid source 251 between the multiple modules to the greatest extent. That is, the thermal atomic deposition gas supply system in the present embodiment adopts a partitioned arrangement, so there is no need to plan a separate placement area for the liquid source 251 outside the columnar space formed by the gas path and the arrangement areas of the various control elements, so as to reduce the space occupied by the thermal atomic deposition gas supply system. At the same time, the placement space of the liquid source 251 is large, thereby reducing the difficulty of placing the liquid source 251 in the columnar space formed by the gas path and the arrangement areas of the various control elements.

[0063] Specifically, a relatively large liquid source placement area 250 can be saved between the gas circuit on-off control area 210, the flow control area 220, the gas circuit piping area 230 and the distribution gas circuit placement area 240. Based on the above-mentioned contents, the gas circuits and the various control elements on the gas circuits of the gas supply system of the thermal atomic deposition equipment in the prior art are arranged in a messy manner. If the liquid source is placed in the columnar space formed by the arrangement areas of the gas circuits and the various control elements, the placement area of ​​the liquid source is limited, resulting in high difficulty in placing the liquid source and a small number of liquid sources to be placed. In order to reduce the difficulty in placing the liquid source and increase the The number of liquid sources to be placed requires that the liquid sources be placed outside the columnar space formed by the gas circuit and the arrangement areas of the various control elements. To this end, it is necessary to plan a separate placement area for the liquid source outside the columnar space formed by the gas circuit and the arrangement areas of the various control elements, resulting in a large space occupied by the gas supply system of the thermal atomic deposition equipment. In this embodiment, two or more liquid sources 251 connected to the second gas circuit 221 and the distribution gas circuit can be placed in the liquid source placement area 250, thereby alternately delivering two or more gas-phase precursors to the reaction chamber.

[0064] Based on the above, the gas circuit on-off control area 210, the flow control area 220 and the liquid source placement area 250 are arranged along the carrier gas delivery path, while the liquid source placement area 250 and the distribution gas circuit are arranged along the reaction gas delivery path, so that the gas circuit can be arranged in an orderly manner, simplifying the complexity of the gas circuit arrangement, thereby further saving placement space for the liquid source 251.

[0065] Preferably, if Figure 4 and Figure 5 As shown, the flow control area 220 is provided with at least two second gas paths 221 , and the second gas paths 221 are connected in series with control units 222 , and all second gas paths 221 are arranged in parallel, thereby reducing the layout space of a single control unit 222 and a second gas path 221 in the flow control area 220 .

[0066] The flow control area 220 is also provided with a fifth gas circuit, which includes a first passage and a second passage. A control unit 222 is connected between the first passage and the second passage. The first passage is connected to the third gas circuit. The second passage includes a first branch, a second branch and a third branch. One end of the first branch and the second branch are both connected to the control unit 222. A second valve is provided on the first branch, and the second valve can control the on-off of the first branch. The other end of the first branch forms a first interface. The other end of the second branch is connected to the distribution gas circuit through the sixth gas circuit. A third valve is provided on the second branch, and the third valve can control the on-off of the second branch. One end of the third branch is connected to the second branch, and the connection between the third branch and the second branch is located between the connection between the second branch and the control unit 222 and the third valve. A fourth valve is provided on the third branch, and the fourth valve can control the on-off of the third branch. The other end of the third branch forms a second interface. The liquid source 251 can be connected between the first interface and the second interface.

[0067] Based on the above, atomic deposition to form a deposited film is achieved through the chemical reaction of two or more gas-phase precursors. In this embodiment, a relatively large space for a liquid source placement area 250 can be saved between the gas path on-off control area 210, the flow control area 220, the gas path pipe layout area 230 and the distribution gas path placement area 240. Therefore, a plurality of liquid sources 251 can be placed in the liquid source placement area 250. In addition to the liquid source 251 connected to the second gas path 221, other liquid sources 251 can also be placed in the liquid source placement area 250. Among them, the liquid source 251 connected to the second gas path 221 can alternately transport two or more gas-phase precursors required for forming a deposited film into the reaction chamber, and the liquid source 251 connected between the first interface and the second interface can transport the gas-phase precursor required for forming another deposited film into the reaction chamber, so that the reaction chamber can be compatible with atomic deposition through different chemical reactions, thereby compatible with the formation of different deposited films. That is, the reaction chamber supplied with gas by the thermal atomic deposition gas supply system in this embodiment can carry out different types of chemical reactions, thereby obtaining different products.

[0068] It should be noted that the other end of the first branch may be provided with a first interface or more than two first interfaces may be provided in parallel, and the other end of the third branch may be provided with a second interface or more than two second interfaces may be provided in parallel, so that one or more liquid sources 251 are connected to the second passage, and the liquid source 251 connected to the second passage can alternately transport different reaction gases into the reaction chamber with the liquid source 251 connected to the second gas path 221 to carry out other chemical reactions. Of course, different reaction gases can also be alternately transported into the reaction chamber only by connecting more than two liquid sources 251 to the second passage to carry out other chemical reactions, and this is not specifically limited in the present embodiment.

[0069] Since the layout space of the single control unit 222 and the second gas circuit 221 in the flow control area 220 is relatively low, the flow control area 220 can meet the installation requirements of the fifth gas circuit and the additional control unit 222 mentioned above, so that an additional liquid source 251 can be placed in the liquid source placement area 250 as needed to produce different products.

[0070] It should be noted that the flow control area 220 in this embodiment is provided with a first mounting plate, and the second valve, the third valve, the fourth valve and all the control units 222 mentioned above are all mounted on the first mounting plate.

[0071] Correspondingly, the gas path on-off control area 210 is provided with a second mounting plate, and the first valve is mounted on the second mounting plate.

[0072] Furthermore, the control unit 222 includes a mass flow meter and a sixth valve. The mass flow meter and the sixth valve arranged on the second gas path 221 are connected in series to the second gas path 221. The sixth valve can control the on-off of the second gas path 221. In this embodiment, the mass flow meter is used to control the flow rate of the carrier gas transported along the second gas path 221, so that the supply amount of the carrier gas supplied to the liquid source 251 can be controlled to meet the supply demand of the reaction gas.

[0073] Based on the above, the distribution gas path is used to uniformly transport the reaction gas flowing out of the liquid source 251 to different reaction chambers, such as Figure 3 As shown, the distribution gas path includes a plurality of seventh branches 241, and the reaction gas flowing out of the liquid source 251 can flow to the plurality of seventh branches 241. Since two or more reaction gases need to be quickly switched and transported into the reaction chamber, the reaction gas flowing out of the liquid source 251 needs to be able to quickly and equally flow to the plurality of seventh branches 241 in a short time. For this purpose, the seventh branch 241 in this embodiment is provided with an eighth valve 242, which is used to control the on and off of the seventh branch 241. In the embodiment, the flow coefficients of the eighth valves 242 on all the seventh branches 241 are the same, the liquid source 251 connected to the second gas circuit 221 is connected to the distribution gas circuit via the seventh gas circuit 252, and a ninth valve 253 is provided on the seventh gas circuit 252. The ninth valve 253 is used to control the on-off of the seventh gas circuit 252, and the flow coefficient of the ninth valve 253 provided on the seventh gas circuit 252 is greater than or equal to the sum of the flow coefficients of the eighth valves 242 on all the seventh branches 241 connected to the seventh gas circuit 252.

[0074] It can be understood that, for the liquid source 251 connected between the first interface and the second interface, the flow coefficient of the third valve is greater than or equal to the sum of the flow coefficients of the eighth valves 242 on all the seventh branches 241 connected to the sixth gas path.

[0075] After the reaction generates a deposited film, that is, after the atomic deposition is completed, the seventh gas path 252 needs to be purged to prevent the reaction residue in the seventh gas path 252 from reacting with the tube wall of the seventh gas path 252 and generating particles, thereby avoiding affecting the reaction gas introduced into the reaction chamber when atomic deposition is performed on other products, and thus avoiding affecting the quality of the deposited films formed on other products subsequently. For this purpose, Figure 5 As shown, in this embodiment, the thermal atomic deposition gas supply system also includes a gas distribution device 260. The liquid source 251 connected to the second gas path 221 is connected to the distribution gas path through the seventh gas path 252. The gas distribution device 260 can connect the seventh gas path 252 and the second gas path 221 to purge the seventh gas path 252 with the carrier gas after the atomic deposition is completed. The purged gas flows to the reaction chamber and is discharged from the reaction chamber.

[0076] Specifically, Figure 4 As shown, the gas distribution device 260 in this embodiment includes a tenth valve 261, which is connected in parallel between the second gas circuit 221 and the seventh gas circuit 252. The second gas circuit 221 is provided with a seventh valve 22123, which is arranged between the position of the second gas circuit 221 connecting the tenth valve 261 and the liquid source 251, and the ninth valve 253 is arranged between the position of the seventh gas circuit 252 connecting the tenth valve 261 and the liquid source 251. When the atomic deposition is completed, the seventh valve 22123 is closed, the ninth valve 253 is closed, the tenth valve 261 is opened, and the gas source 211 continues to ventilate the second gas circuit 221 to purge the seventh gas circuit 252. The purged gas flows to the reaction chamber and is discharged from the reaction chamber.

[0077] Furthermore, if Figure 4As shown, the gas source 211 can supply gas to at least two liquid sources 251 through at least two second gas paths 221 respectively, the second gas path 221 includes a third path 2211 and a fourth path 2212, the third path 2211 is communicated with the first gas path 212, the control unit 222 is arranged on the third path 2211, the fourth path 2212 includes a fifth branch 22121 and a sixth branch 22122, one end of the fifth branch 22121 and the sixth branch 22122 are both communicated with the third path 2211, the other end of the fifth branch 22121 is communicated with the gas distribution device 260, the gas distribution device 260 also includes an eleventh valve 262, the eleventh valve 262 is arranged on the fifth branch 22121, the other end of the sixth branch 22122 is communicated with the liquid source 251, the sixth branch 2212 2 is provided with a seventh valve 22123, and the seventh valve 22123 can control the opening and closing of the sixth branch 22122. In this embodiment, for the liquid sources 251 connected to the second gas path 221, when one of the liquid sources 251 delivers the reaction gas to the reaction chamber, the ninth valve 253 on the seventh gas path 252 connected to the liquid source 251 is opened, and at the same time, the seventh valve 22123 on the second gas path 221 connected to the liquid source 251 is opened, and the eleventh valve 262 is closed, and the ninth valve 253 on the seventh gas path 252 connected to the other liquid sources 251 is closed, and at the same time, the seventh valve 22123 on the second gas path 221 connected to the liquid source 251 is closed, and the eleventh valve 262 is opened, so as to exhaust the carrier gas on the second gas path 221 connected to the liquid source 251.

[0078] Based on the above, in this embodiment, two or more reaction gases are alternately delivered to the reaction chamber through valve control. Compared with the on-off control of the mass flow meter to alternately deliver two or more reaction gases to the reaction chamber, the valve has a high response speed, which solves the inherent deficiency of the mass flow meter in response speed. For high reaction frequency reactions, the mass flow meter can remain open without closing. Based on the above, in this embodiment, two or more reaction gases need to be quickly switched and delivered to the reaction chamber through valves, so that the process action required by the recipe can be responded to at the fastest speed.

[0079] Furthermore, if Figure 5 As shown, all the second gas paths 221 are located between at least two seventh gas paths 252 , thereby simplifying the arrangement paths of the second gas paths 221 and the seventh gas paths 252 , thereby further saving placement space for the liquid source 251 .

[0080] For the liquid source 251 connected between the first interface and the second interface, the fifth gas path and the sixth gas path connected to the liquid source 251 also need to be emptied and purged. For this reason, the second path in this embodiment also includes a fourth branch, and the two ends of the fourth branch are respectively connected to the first branch and the third branch. The connection between the fourth branch and the first branch is located between the second valve and the first interface, and the connection between the fourth branch and the third branch is located between the fourth valve and the second interface. A fifth valve is arranged on the fourth branch, and the fifth valve can control the on and off of the fourth branch. The gas path between the liquid source 251 and the first interface also passes through the gas distribution device 260, so that when the liquid source 251 connected to the first interface does not transport the reaction gas to the reaction chamber, the carrier gas on the fifth gas path connected to the liquid source 251 is emptied. At the same time, when the atomic deposition is completed, the fourth branch can connect the first branch and the third branch, so that the fifth gas path and the sixth gas path are purged by the carrier gas after the atomic deposition is completed.

[0081] Based on the above, the sixth valve for controlling the overall on-off of the second gas circuit 221 and the seventh gas circuit 252 is arranged in the flow control area 220. At the same time, the ninth valve 253 in this embodiment is arranged close to the liquid source 251, thereby ensuring that no control element is set on the seventh gas circuit 252 between the ninth valve 253 and the distribution gas circuit placement area 240, thereby ensuring that the seventh gas circuit 252 is located between the ninth valve 253 and the distribution gas circuit placement area 240 and extends in the vertical direction, thereby simplifying the layout path of the seventh gas circuit 252, thereby being able to further save placement space for the liquid source 251.

[0082] Based on the above, the liquid source 251 communicated with the second gas path 221 is communicated with the distribution gas path through the seventh gas path 252 . Based on the above, in order to enable the reaction gas flowing out of the liquid source 251 to flow to the distribution gas path and thus flow into the reaction chamber, it is necessary to heat the position of the seventh gas path 252 between the ninth valve 253 and the distribution gas path, thereby increasing the pressure of the reaction gas flowing along the seventh gas path 252. To this end, in this embodiment, a pipeline heating device as described in the first embodiment is provided at a position on the pipeline corresponding to the position of the seventh gas path 252 located downstream of the gas distribution device 260. The pipeline heating device can heat the position on the pipeline corresponding to the position of the seventh gas path 252 located downstream of the gas distribution device 260. A plurality of temperature zones are provided at the position of the seventh gas path 252 located downstream of the gas distribution device 260. The plurality of temperature zones are continuously arranged along the extension direction of the seventh gas path 252. Among two adjacent temperature zones, the temperature of the temperature zone close to the distribution gas path is greater than the temperature of the temperature zone far from the distribution gas path, thereby pressurizing the reaction gas flowing along the seventh gas path 252 step by step, thereby ensuring that the reaction gas flowing out of the liquid source 251 can flow to the distribution gas path.

[0083] It can be understood that since the seventh gas circuit 252 in this embodiment is located between the ninth valve 253 and the distribution gas circuit placement area 240 and extends in the vertical direction, it is convenient to arrange a pipeline heating device at a position on the pipeline corresponding to the position of the seventh gas circuit 252 between the ninth valve 253 and the distribution gas circuit placement area 240. At the same time, in this embodiment, a second heater 120 is separately arranged at the corner of the pipeline corresponding to the part of the seventh gas circuit 252 located in the distribution gas circuit placement area 240, thereby ensuring that all positions of the seventh gas circuit 252 between the ninth valve 253 and the distribution gas circuit are heated without cold spots.

[0084] It should be noted that in the seventh gas circuit 252 of this embodiment, each temperature zone between the ninth valve 253 and the distribution gas circuit is provided with two temperature sensors, one of which is used to detect whether the temperature of the temperature zone meets the requirements, and the other temperature sensor can work together with the temperature sensor used to detect whether the temperature of the temperature zone meets the requirements to detect the heating efficiency of the temperature zone, thereby ensuring that the temperature of each temperature zone is stable and controllable.

[0085] Furthermore, the present embodiment also provides a thermal atomic deposition device, which includes a modular gas system, a reaction chamber and a thermal atomic deposition gas supply system as described above, wherein the reaction chamber has at least two reaction chambers, and the distribution gas path is connected to the reaction chambers in the reaction chamber through the modular gas system, and the modular gas system is arranged in the reaction chamber adjacent to the reaction chamber.

[0086] Based on the above, the distribution gas path is connected to the reaction chamber through the modular gas system. Specifically, the modular gas system supplies gas to the two reaction chambers respectively through branch pipes. The thermal atomic deposition gas supply system is used to evenly introduce the reaction gas into at least two reaction chambers. Since the thermal atomic deposition gas supply system occupies a small space, the thermal atomic deposition equipment also occupies a small space.

[0087] After switching from one liquid source 251 to another liquid source 251 for delivering the reaction gas to the reaction chamber, the reaction gas remaining in the sixth gas path or the seventh gas path 252 connected to the liquid source 251 originally delivering the reaction gas to the reaction chamber can flow to the modular gas system. In this embodiment, the modular gas system is arranged close to the reaction chamber, thereby shortening the length of the gas path between the modular gas system and the reaction chamber. In addition, the position of the branch pipe is located between the two reaction chambers, thereby shortening the path for the reaction gas to enter the reaction chamber, so as to reduce the time consumed by the reaction gas in the sixth gas path or the seventh gas path 252 connected to the other liquid source 251 to flow into the reaction chamber when switching from one liquid source 251 to another liquid source 251 for delivering the reaction gas to the reaction chamber, thereby further realizing the fastest response to the process action required by the recipe, and at the same time, it is possible to quickly extract the gas used to purge the seventh gas path 252, so as to avoid the purge gas remaining in the seventh gas path 252, the distribution gas path and the modular gas system for a long time.

[0088] Based on the above, the seventh gas path 252 in the thermal atomic deposition equipment for conveying reaction gas to the distribution gas path is provided with a pipeline heating device as described in Example 1, thereby enabling cold-spot-free heating of the pipeline connecting the liquid source 251 and the distribution gas path, and at the same time enabling the temperature of the pipeline connecting the liquid source 251 and the distribution gas path to be uniformly increased from the side close to the liquid source 251 to the side close to the distribution gas path, thereby ensuring that the reaction gas can be stably conveyed to the distribution gas path.

[0089] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A pipe heating device, characterized in that: The pipeline heating device is provided with a plurality of temperature zones, and the plurality of temperature zones are continuously arranged along the extension direction of the pipeline. The pipeline heating device comprises: a first heater (110), wherein all the temperature zones arranged in the straight section of the pipeline are provided with the first heater (110), and the first heater (110) is configured to uniformly heat the pipeline in the corresponding temperature zone; and A second heater (120) is provided in the temperature zone of the corner section of the pipeline. The second heater (120) is configured to heat the corner section of the pipeline.

2. A thermal atomic deposition gas supply system, characterized in that: include: A gas path on-off control area (210), wherein the gas path on-off control area (210) is provided with a first gas path (212), one end of the first gas path (212) is connected to a gas source (211), and the first gas path (212) is provided with a first valve, and the first valve can control the on-off of the first gas path (212); A flow control area (220), wherein the flow control area (220) and the gas path on-off control area (210) are arranged at intervals in the vertical direction, a second gas path (221) and a control unit (222) are arranged in the flow control area (220), two ends of the second gas path (221) are respectively connected to the liquid source (251) and the first gas path (212), the second gas path (221) is provided with the control unit (222), and the control unit (222) can control the supply amount of the carrier gas supplied from the second gas path (221) to the liquid source (251); an air path pipe arrangement area (230), located between the air path on-off control area (210) and the flow control area (220), and located on one side of the air path on-off area and the flow control area (220); a third air path is arranged in the air path pipe arrangement area (230), and the third air path is connected between the first air path (212) and the second air path (221); a distribution gas path placement area (240), wherein the distribution gas path placement area (240) is provided with a distribution gas path, the distribution gas path is connected to the liquid source (251), and can evenly transport the reaction gas flowing out of the liquid source (251) to different reaction chambers, and the pipeline heating device according to claim 1 is provided on the gas path connected between the distribution gas path and the liquid source (251); and The liquid source placement area (250), the gas circuit on-off control area (210), the flow control area (220), the gas circuit pipe layout area (230) and the distribution gas circuit placement area (240) together form the liquid source placement area (250), and the liquid source (251) is placed in the liquid source placement area (250).

3. The thermal atomic deposition gas supply system according to claim 2, characterized in that: The flow control area (220) is provided with at least two second gas paths (221), the control unit (222) is connected in series to the second gas path (221), and all the second gas paths (221) are arranged in parallel; The flow control area (220) is further provided with a fifth gas circuit, the fifth gas circuit comprising a first passage and a second passage, the first passage and the second passage being connected with the control unit (222), the first passage being connected with the third gas circuit, the second passage comprising a first branch, a second branch and a third branch, one end of the first branch and the second branch being both connected with the control unit (222), a second valve being provided on the first branch, the second valve being capable of controlling the on-off of the first branch, the other end of the first branch forming a first interface, the other end of the second branch being connected with the distribution gas circuit via a sixth gas circuit, a third valve being provided on the second branch, the third valve being capable of controlling the on-off of the second branch, one end of the third branch being connected with the second branch, and a connection point between the third branch and the second branch being located between a connection point between the second branch and the control unit (222) and the third valve, a fourth valve being provided on the third branch, the fourth valve being capable of controlling the on-off of the third branch, the other end of the third branch forming a second interface, the first interface and the second interface being capable of connecting with the liquid source (251).

4. The thermal atomic deposition gas supply system according to claim 3, characterized in that: The second passage also includes a fourth branch, and both ends of the fourth branch are connected to the first branch and the third branch respectively. The connection point between the fourth branch and the first branch is located between the second valve and the first interface, and the connection point between the fourth branch and the third branch is located between the fourth valve and the second interface. A fifth valve is provided on the fourth branch, and the fifth valve can control the on and off of the fourth branch.

5. The thermal atomic deposition gas supply system according to claim 2, characterized in that: The thermal atomic deposition gas supply system also includes a gas distribution device (260), and the liquid source (251) connected to the second gas path (221) is connected to the distribution gas path through a seventh gas path (252), and the gas distribution device (260) can connect the seventh gas path (252) and the second gas path (221).

6. The thermal atomic deposition gas supply system according to claim 5, characterized in that: The pipeline heating device is provided at a portion of the seventh gas path (252) located downstream of the gas distribution device (260), and the pipeline heating device is capable of heating the portion of the seventh gas path (252) located downstream of the gas distribution device (260). The portion of the seventh gas path (252) located downstream of the gas distribution device (260) is provided with a plurality of temperature zones, and the plurality of temperature zones are continuously arranged along the extension direction of the seventh gas path (252); Of the two adjacent temperature zones, the temperature of the temperature zone close to the distribution gas path is greater than the temperature of the temperature zone far from the distribution gas path.

7. The thermal atomic deposition gas supply system according to claim 5, characterized in that: The control unit (222) comprises a mass flow meter and a sixth valve, wherein the mass flow meter and the sixth valve are connected in series to the second gas path (221), and the sixth valve is capable of controlling the on-off of the second gas path (221).

8. The thermal atomic deposition gas supply system according to claim 7, characterized in that: The gas source (211) can supply gas to at least two of the liquid sources (251) respectively through at least two of the second gas paths (221); the second gas path (221) comprises a third path (2211) and a fourth path (2212); the third path (2211) is connected to the first gas path (212); the control unit (222) is arranged on the third path (2211); the fourth path (2212) comprises a fifth branch path (22121) and a sixth branch path (22122). One end of the fifth branch (22121) and the sixth branch (22122) are both connected to the third passage (2211), the other end of the fifth branch (22121) is connected to the gas distribution device (260), the other end of the sixth branch (22122) is connected to the liquid source (251), and a seventh valve (22123) is provided on the sixth branch (22122), and the seventh valve (22123) can control the opening and closing of the sixth branch (22122).

9. The thermal atomic deposition gas supply system according to claim 8, characterized in that: All of the second gas paths (221) are located between at least two of the seventh gas paths (252).

10. A thermal atomic deposition apparatus, characterized in that: It comprises a modular gas system, a reaction chamber and a thermal atomic deposition gas supply system as described in any one of claims 2 to 9, wherein the reaction chamber has at least two reaction chambers, the distribution gas path is connected to the reaction chambers in the reaction chamber through the modular gas system, the modular gas system is arranged in the reaction chamber at a position adjacent to the reaction chamber, and the thermal atomic deposition gas supply system is used to uniformly introduce reaction gas into different reaction chambers.

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