The invention relates to a polysilicon ingot casting method with low defect and high output and a thermal field structure thereof. The thermal field structure comprises a thermal insulation cover system, a crucible system, split resistance heaters, a support part and a cooling device, wherein the three heaters are independently and separably controlled to lower energy consumption to the maximum degree and bring convenience for regulating a crystal growth interface, thereby obtaining an evener crystal growth interface, improving crystal quality and solving the later-stage cooling problem of the crystal growth because of the increase of the height of the ingot casting. A support block with the unique design and a cooling device are combined to realize the purpose of local cooling, so that the local position on the bottom of a crucible generates cold spots at the early stage of the crystal growth; nucleation is carried out firstly to reduce nucleation spots, and lateral temperature gradient is obtained to provide the necessary condition for the lateral growth of the crystal nucleus; crystalline grains are enlarged to reduce a crystal boundary to the large extent; and microdefects, such as dislocation and the like, are lowered.