Gallium oxide crystal microdefect detection method and system based on image processing

Abstract

The invention relates to the technical field of defect detection, in particular to a gallium oxide crystal microdefect detection method and system based on image processing, and the method comprises the steps: obtaining a solid-liquid interface three-dimensional image in a crystal furnace in a gallium oxide crystal growth process, and obtaining a solid-liquid interface infrared image at the same time; determining a solid-liquid interface form coefficient and a solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; determining the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image; and determining a microdefect generation index of the gallium oxide crystal according to the solid-liquid interface form coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and performing microdefect generation early warning when the microdefect generation index is greater than a preset microdefect generation threshold. By analyzing the microdefect generation condition of the gallium oxide crystal, the timeliness and reliability of microdefect detection of the gallium oxide crystal are improved.

Description

Technical Field

[0001] The present application relates to the field of defect detection technology, and in particular to a method and system for detecting microscopic defects of gallium oxide crystals based on image processing. Background Art

[0002] Gallium oxide ( ) As an ultra-wide bandgap semiconductor material, it can be used to make high-power power electronic devices, radio frequency devices, day-blind ultraviolet photodetector devices and high-brightness LEDs due to its excellent properties such as wide bandgap, low energy loss, fast response speed and low single crystal preparation cost. It has broad application prospects in rail transit, photovoltaic power generation, smart grid, new energy vehicles, medical imaging, environmental and biochemical testing and other fields.

[0003] Gallium oxide crystals are structures with regular geometric shapes formed by a large number of microscopic material units arranged in an orderly manner according to certain rules. Their microscopic defects usually refer to incomplete areas where the arrangement of atoms in the internal structure of gallium oxide crystals deviates from the ideal structure and areas where the integrity of the crystal structure is destroyed. According to the size and shape of the incomplete areas of the crystal internal structure, crystal microscopic defects are usually divided into three types: point defects, line defects and surface defects. Among them, point defects refer to lattice defects involving an atomic size range, including vacancies, interstitial atoms and impurity atoms; line defects are also called dislocations, and periodic destruction inside the lattice occurs on a line. The dislocated atoms are no longer arranged in an orderly manner near the line, but slip between rows and columns, resulting in plastic deformation of the crystal; surface defects are also called grain boundaries, which refer to the boundaries where the crystal arrangement direction suddenly changes, mainly including grain boundaries, twin boundaries, phase boundaries and stacking faults.

[0004] The existence, quantity and distribution of microscopic defects in gallium oxide crystals have a great influence on the thermal conductivity, resistance, optical and mechanical properties of gallium oxide crystals. At the same time, they seriously affect the performance indicators of gallium oxide crystals such as strength, plasticity and tensile strength. The existing methods for detecting microscopic defects in gallium oxide crystals usually use high-resolution microscopic imaging equipment such as optical microscopes, scanning electron microscopes, transmission electron microscopes and atomic force microscopes to detect microscopic defects in crystals after the crystal growth is completed. The relationship between the solid-liquid interface morphology and stability during the growth of gallium oxide crystals and the crystal thermal stress distribution and the generation of crystal microscopic defects is ignored. The morphology and stability of the solid-liquid interface determine the atomic stacking mode during the crystal growth process. Uneven distribution of thermal stress will cause microscopic defects such as cracks and dislocations inside the crystal, affecting the optical and electronic properties of gallium oxide crystals. Summary of the invention

[0005] In order to overcome the defects and shortcomings of the prior art, the present application provides a method and system for detecting microscopic defects of gallium oxide crystals based on image processing, which comprehensively analyzes the microscopic defect generation conditions of gallium oxide crystals through the solid-liquid interface morphology, stability and crystal thermal stress distribution during the growth of gallium oxide crystals, thereby improving the timeliness and reliability of microscopic defect detection of gallium oxide crystals.

[0006] In order to achieve the above objectives, this application adopts the following technical solutions: In a first aspect, the present application provides a method for detecting microscopic defects of gallium oxide crystals based on image processing, comprising the following steps: Acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; Determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The thermal stress distribution coefficient of the gallium oxide crystal is determined by analyzing the infrared image of the solid-liquid interface; The micro defect generation index of the gallium oxide crystal is determined by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and a micro defect generation warning is performed when the micro defect generation index is greater than a preset micro defect generation threshold.

[0007] Optionally, the specific steps of determining the solid-liquid interface morphology coefficient include: Acquire the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface, take the bottom plane of the crystal furnace as the xOy plane, and construct a spatial rectangular coordinate system with the height of the solid-liquid interface as the z-axis, and map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system, wherein the preset three-dimensional image of the solid-liquid interface is acquired by CGSim crystal growth simulation software, which can simulate the solid-liquid interface of the crystal growth process by combining the finite volume method and the finite element method, and use the optimal three-dimensional image of the solid-liquid interface obtained by simulation as the preset three-dimensional image of the solid-liquid interface; The solid-liquid interface morphology coefficient is calculated by the solid-liquid interface three-dimensional image and the preset solid-liquid interface three-dimensional image. The solid-liquid interface morphology coefficient calculation formula is: ; In the formula Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at represents the number of pixels on the x-axis of the three-dimensional image of the solid-liquid interface, Represents the number of pixels on the y-axis of the three-dimensional image of the solid-liquid interface, Represents the solid-liquid interface morphology coefficient.

[0008] Optionally, the specific steps of determining the solid-liquid interface stability coefficient include: Acquiring a three-dimensional image of the solid-liquid interface; The solid-liquid interface stability coefficient is calculated by the solid-liquid interface three-dimensional image, and the solid-liquid interface stability coefficient calculation formula is: ; In the formula Indicates The solid-liquid interface variation coefficient at each monitoring time point is represents the number of monitoring time points, represents the maximum value of the solid-liquid interface variation coefficient, Represents the solid-liquid interface stability coefficient.

[0009] Optionally, the calculation formula of the solid-liquid interface variation coefficient is: ; In the formula Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane of the spatial rectangular coordinate system, Indicates The coefficient of change of the solid-liquid interface at each monitoring time point.

[0010] Optionally, the specific steps of determining the thermal stress distribution coefficient include: Acquiring an infrared image of the solid-liquid interface; The center point of the solid-liquid interface Construct a circle with a radius of The concentric circles with a radius calculated through the solid-liquid interface infrared image are The mean circumferential temperature of the concentric circles is calculated by the formula: ; In the formula The radius is The pixels on the circumference of the concentric circles The temperature value at The radius is The number of pixels on the circumference of the concentric circles, The radius is The mean circumferential temperature of the concentric circles; The circumferential temperature gradient is calculated by the circumferential temperature mean value, and the circumferential temperature gradient calculation formula is: ; In the formula The radius is The mean circumferential temperature of the concentric circles is The radius is The mean circumferential temperature of the concentric circles is The radius is Circumferential temperature gradient of concentric circles; The circumferential thermal stress is calculated by the circumferential temperature gradient, and the circumferential thermal stress calculation formula is: ; In the formula represents the elastic modulus of gallium oxide crystal, represents the linear thermal expansion coefficient of gallium oxide crystal, represents the Poisson's ratio of the gallium oxide crystal, The radius is The circumferential temperature gradient of the concentric circles, The radius is Circumferential thermal stress of concentric circles, where the elastic modulus, linear thermal expansion coefficient and Poisson's ratio of gallium oxide crystal are obtained through the material property database; The thermal stress distribution coefficient is calculated by the circumferential thermal stress, and the thermal stress distribution coefficient calculation formula is: ; In the formula The radius is The circumferential thermal stress of the concentric circles, represents the number of concentric circles, Represents the thermal stress distribution coefficient.

[0011] Optionally, the specific steps of determining the micro defect generation index of the gallium oxide crystal include: Obtaining the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient; The micro defect generation index is calculated by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient. The micro defect generation index calculation formula is: ; In the formula represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, Represents the micro defect generation index.

[0012] It should be noted here that the solid-liquid interface morphology weight, solid-liquid interface stability weight, thermal stress distribution weight and preset micro-defect generation threshold are obtained as follows: 5000 sets of solid-liquid interface three-dimensional images and solid-liquid interface infrared images are collected to distinguish whether micro-defects are generated during the growth of gallium oxide crystals, and the solid-liquid interface three-dimensional images and solid-liquid interface infrared images are substituted into the micro-defect generation index calculation formula for calculation, and the calculated micro-defect generation index and the distinction result are simultaneously imported into the fitting software, and the optimal solid-liquid interface morphology weight, solid-liquid interface stability weight, thermal stress distribution weight and preset micro-defect generation threshold that meet the distinction accuracy of the distinction result are output.

[0013] In a second aspect, the present application provides a gallium oxide crystal micro defect detection system based on image processing, comprising: An image acquisition module is used to acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; A first analysis module is used to determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The second analysis module is used to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image; The micro defect generation warning module is used to determine the micro defect generation index of the gallium oxide crystal by using the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and to issue a micro defect generation warning when the micro defect generation index is greater than a preset micro defect generation threshold.

[0014] In a third aspect, an embodiment of the present application provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the method for detecting microscopic defects of gallium oxide crystals based on image processing as described in any embodiment of the first aspect can be implemented.

[0015] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, can implement the gallium oxide crystal micro-defect detection method based on image processing as described in any embodiment of the first aspect.

[0016] Compared with the prior art, this application has the following advantages and beneficial effects: The present application quantifies the solid-liquid interface morphology and stability of gallium oxide crystals through the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient, confirms the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image, and then determines the micro defect generation index of the gallium oxide crystal through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, thereby improving the timeliness and reliability of the micro defect detection of the gallium oxide crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 A schematic diagram of a process for detecting microscopic defects of gallium oxide crystals based on image processing provided in an embodiment of the present application; Figure 2 A schematic diagram of a process for determining the thermal stress distribution coefficient in the gallium oxide crystal micro-defect detection method based on image processing provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of a gallium oxide crystal micro defect detection system based on image processing provided in an embodiment of the present application; Figure 4 A schematic diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0019] The technical solution of the present application is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solution of the present application, rather than limitations on the technical solution of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0020] Example 1 like Figure 1 As shown, an embodiment of the present application provides a method for detecting microscopic defects of gallium oxide crystals based on image processing, the method comprising: S101: Acquire a three-dimensional image of the solid-liquid interface in a crystal furnace during the growth of a gallium oxide crystal, and simultaneously acquire an infrared image of the solid-liquid interface.

[0021] S102: determining a solid-liquid interface morphology coefficient and a solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; Generally, the solid-liquid interface morphology of gallium oxide crystals includes convex melt, flat, concave melt, convex melt with edge groove, slightly convex melt, and slightly concave melt. Among them, the convex melt is conducive to the growth of gallium oxide crystals and is not easy to produce twins. When twins are generated, outward twins are also likely to be generated, which has little effect on the main crystal direction of the crystal. However, excessive convexity to the melt can easily lead to uneven radial stress and even internal stress accumulation, resulting in a large proliferation of dislocations. There are fewer dislocations in a flat solid-liquid interface. It is generally believed that the flatter the solid-liquid interface, the smaller the stress on the crystal and the fewer defects in the grown crystal. However, for the growth of large-diameter gallium oxide crystals, the flatter the solid-liquid interface, the easier it is for the interface state to become unstable, resulting in internal The crystal diameter of the concave melt is not easy to maintain, and it is easy to produce voids and holes. The twins produced are easy to deviate to the inside of the crystal, interfering with the main crystal direction; the edge of the gallium oxide crystal with an edge groove convex to the melt is easy to produce twins, affecting the overall quality of the crystal; the solid-liquid interface of the slightly convex melt and the slightly concave melt can reduce the generation of defects such as dislocations when a large-diameter crystal grows, and can also enable the crystal to have sufficient growth power. At the same time, it maintains the stability of the crystal diameter and reduces the crystal stress. Usually, the solid-liquid interface of the slightly convex melt should be maintained during equal diameter growth, and the solid-liquid interface of the slightly concave melt should be maintained in the final stage. The specific steps for determining the solid-liquid interface morphology coefficient include: Acquire the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface, take the bottom plane of the crystal furnace as the xOy plane, and construct a spatial rectangular coordinate system with the height of the solid-liquid interface as the z-axis, and map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system, wherein the preset three-dimensional image of the solid-liquid interface is acquired by CGSim crystal growth simulation software, which can simulate the solid-liquid interface of the crystal growth process by combining the finite volume method and the finite element method, and use the optimal three-dimensional image of the solid-liquid interface obtained by simulation as the preset three-dimensional image of the solid-liquid interface; The solid-liquid interface morphology coefficient is calculated by the solid-liquid interface three-dimensional image and the preset solid-liquid interface three-dimensional image. The solid-liquid interface morphology coefficient calculation formula is: ; In the formula Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at represents the number of pixels on the x-axis of the three-dimensional image of the solid-liquid interface, Represents the number of pixels on the y-axis of the three-dimensional image of the solid-liquid interface, represents the solid-liquid interface morphology coefficient; The stability of the solid-liquid interface is crucial to the growth of gallium oxide crystals. A stable solid-liquid interface can ensure uniform atomic stacking during the growth of gallium oxide crystals, reduce the generation of defects caused by interface fluctuations and melt convection, and thus improve the structural integrity, optical properties and electrical properties of gallium oxide crystals. A highly stable solid-liquid interface helps produce high-quality gallium oxide crystals, reduce dislocation density, and enhance the application value of crystals. The specific steps to determine the solid-liquid interface stability coefficient include: Acquiring a three-dimensional image of the solid-liquid interface; The solid-liquid interface stability coefficient is calculated by the solid-liquid interface three-dimensional image, and the solid-liquid interface stability coefficient calculation formula is: ; In the formula Indicates The solid-liquid interface variation coefficient at each monitoring time point is represents the number of monitoring time points, represents the maximum value of the solid-liquid interface variation coefficient, represents the solid-liquid interface stability coefficient; By comparing the height differences of each pixel in the three-dimensional image of the solid-liquid interface at adjacent monitoring time points, the degree of change of the solid-liquid interface morphology over time is quantified. Specifically, by comparing the height values ​​of each pixel at adjacent monitoring time points and then normalizing by the number of pixels, the solid-liquid interface variation coefficient is finally obtained. The larger the solid-liquid interface variation coefficient, the more significant the change in the solid-liquid interface morphology. The smaller the solid-liquid interface variation coefficient, the more stable the solid-liquid interface morphology. The calculation formula of the solid-liquid interface variation coefficient is: ; In the formula Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane of the spatial rectangular coordinate system, Indicates The coefficient of change of the solid-liquid interface at each monitoring time point.

[0022] S103: determining the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface; By analyzing the infrared image of the solid-liquid interface, concentric circles of different radii are constructed in turn and the mean circumferential temperature of each concentric circle is calculated. Then, the circumferential temperature gradient under different radii is calculated, and the corresponding thermal stress is calculated using the circumferential temperature gradient. Finally, the circumferential thermal stress on all concentric circles is analyzed to determine its distribution uniformity. The larger the thermal stress distribution coefficient, the more uneven the distribution of thermal stress, which is more likely to cause stress concentration inside the crystal, leading to the generation of microscopic defects such as dislocations and cracks, such as Figure 2 As shown, the specific steps for determining the thermal stress distribution coefficient include: Acquiring an infrared image of the solid-liquid interface; The center point of the solid-liquid interface Construct a circle with a radius of The concentric circles with a radius calculated through the solid-liquid interface infrared image are The mean circumferential temperature of the concentric circles is calculated by the formula: ; In the formula The radius is The pixels on the circumference of the concentric circles The temperature value at The radius is The number of pixels on the circumference of the concentric circles, The radius is The mean circumferential temperature of the concentric circles; The circumferential temperature gradient is calculated by the circumferential temperature mean value, and the circumferential temperature gradient calculation formula is: ; In the formula The radius is The mean circumferential temperature of the concentric circles is The radius is The mean circumferential temperature of the concentric circles is The radius is Circumferential temperature gradient of concentric circles; The circumferential thermal stress is calculated by the circumferential temperature gradient, and the circumferential thermal stress calculation formula is: ; In the formula represents the elastic modulus of gallium oxide crystal, represents the linear thermal expansion coefficient of gallium oxide crystal, represents the Poisson's ratio of the gallium oxide crystal, The radius is The circumferential temperature gradient of the concentric circles, The radius is Circumferential thermal stress of concentric circles, where the elastic modulus, linear thermal expansion coefficient and Poisson's ratio of gallium oxide crystal are obtained through the material property database; The thermal stress distribution coefficient is calculated by the circumferential thermal stress, and the thermal stress distribution coefficient calculation formula is: ; In the formula The radius is The circumferential thermal stress of the concentric circles, represents the number of concentric circles, Represents the thermal stress distribution coefficient.

[0023] S104: determining a micro defect generation index of the gallium oxide crystal by using the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and performing a micro defect generation warning when the micro defect generation index is greater than a preset micro defect generation threshold; The solid-liquid interface morphology coefficient, solid-liquid interface stability coefficient and thermal stress distribution coefficient together constitute the core indicators of the micro-defect generation index, which respectively reflect the ideal degree of interface morphology, interface stability and uniformity of thermal stress distribution during crystal growth. Specifically, the morphology coefficient clarifies the influence of the geometric morphology of the interface on defect generation, the stability coefficient reflects the influence of interface fluctuations on the crystal structure, and the thermal stress distribution coefficient measures the risk of micro-defects caused by internal stress concentration. The specific steps to determine the micro-defect generation index of gallium oxide crystals include: Obtaining the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient; The micro defect generation index is calculated by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient. The micro defect generation index calculation formula is: ; In the formula represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, Represents the micro defect generation index.

[0024] Example 2 like Figure 3 FIG. 1 is a schematic diagram of a structure of a gallium oxide crystal micro defect detection system based on image processing provided in an embodiment of the present application. The gallium oxide crystal micro defect detection system based on image processing includes: An image acquisition module 301 is used to acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; A first analysis module 302 is used to determine a solid-liquid interface morphology coefficient and a solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The second analysis module 303 is used to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image; The micro defect generation warning module 304 is used to determine the micro defect generation index of the gallium oxide crystal by using the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and to issue a micro defect generation warning when the micro defect generation index is greater than a preset micro defect generation threshold.

[0025] Specifically, the first analysis module 302 is used to determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image. The specific steps of determining the solid-liquid interface morphology coefficient include: Acquire the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface, take the bottom plane of the crystal furnace as the xOy plane, and construct a spatial rectangular coordinate system with the height of the solid-liquid interface as the z-axis, and map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system, wherein the preset three-dimensional image of the solid-liquid interface is acquired by CGSim crystal growth simulation software, which can simulate the solid-liquid interface of the crystal growth process by combining the finite volume method and the finite element method, and use the optimal three-dimensional image of the solid-liquid interface obtained by simulation as the preset three-dimensional image of the solid-liquid interface; The solid-liquid interface morphology coefficient is calculated by the solid-liquid interface three-dimensional image and the preset solid-liquid interface three-dimensional image. The solid-liquid interface morphology coefficient calculation formula is: ; In the formula Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at represents the number of pixels on the x-axis of the three-dimensional image of the solid-liquid interface, Represents the number of pixels on the y-axis of the three-dimensional image of the solid-liquid interface, represents the solid-liquid interface morphology coefficient; The specific steps for determining the solid-liquid interface stability coefficient include: Acquiring a three-dimensional image of the solid-liquid interface; The solid-liquid interface stability coefficient is calculated by the solid-liquid interface three-dimensional image, and the solid-liquid interface stability coefficient calculation formula is: ; In the formula Indicates The solid-liquid interface variation coefficient at each monitoring time point is represents the number of monitoring time points, represents the maximum value of the solid-liquid interface variation coefficient, represents the solid-liquid interface stability coefficient; The calculation formula of the solid-liquid interface variation coefficient is: ; In the formula Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane of the spatial rectangular coordinate system, Indicates The coefficient of change of the solid-liquid interface at each monitoring time point.

[0026] Specifically, the second analysis module 303 is used to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image. The specific steps of determining the thermal stress distribution coefficient include: Acquiring an infrared image of the solid-liquid interface; The center point of the solid-liquid interface Construct a circle with a radius of The concentric circles with a radius calculated through the solid-liquid interface infrared image are The mean circumferential temperature of the concentric circles is calculated by the formula: ; In the formula The radius is The pixels on the circumference of the concentric circles The temperature value at The radius is The number of pixels on the circumference of the concentric circles, The radius is The mean circumferential temperature of the concentric circles; The circumferential temperature gradient is calculated by the circumferential temperature mean value, and the circumferential temperature gradient calculation formula is: ; In the formula The radius is The mean circumferential temperature of the concentric circles is The radius is The mean circumferential temperature of the concentric circles is The radius is Circumferential temperature gradient of concentric circles; The circumferential thermal stress is calculated by the circumferential temperature gradient, and the circumferential thermal stress calculation formula is: ; In the formula represents the elastic modulus of gallium oxide crystal, represents the linear thermal expansion coefficient of gallium oxide crystal, represents the Poisson's ratio of the gallium oxide crystal, The radius is The circumferential temperature gradient of the concentric circles, The radius is Circumferential thermal stress of concentric circles, where the elastic modulus, linear thermal expansion coefficient and Poisson's ratio of gallium oxide crystal are obtained through the material property database; The thermal stress distribution coefficient is calculated by the circumferential thermal stress, and the thermal stress distribution coefficient calculation formula is: ; In the formula The radius is The circumferential thermal stress of the concentric circles, represents the number of concentric circles, Represents the thermal stress distribution coefficient.

[0027] Specifically, the micro defect generation warning module 304 is used to determine the micro defect generation index of the gallium oxide crystal by using the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient. When the micro defect generation index is greater than a preset micro defect generation threshold, a micro defect generation warning is performed. The specific steps of determining the micro defect generation index of the gallium oxide crystal include: Obtaining the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient; The micro defect generation index is calculated by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient. The micro defect generation index calculation formula is: ; In the formula represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, Represents the micro defect generation index.

[0028] The above-mentioned parameters in the gallium oxide crystal micro defect detection system based on image processing and the steps for each unit module to implement the corresponding functions provided in the embodiment of the present application can refer to the parameters and steps in the embodiment of the gallium oxide crystal micro defect detection method based on image processing above, and will not be repeated here.

[0029] like Figure 4 As shown, an embodiment of the present application provides an electronic device 400, which includes: a memory 401, a processor 402, and a computer program stored in the memory 401 and executable on the processor 402, wherein the processor 402 reads the program from the memory 401 through a bus 403 and executes the program to implement a method of any embodiment of the above-mentioned method for detecting microscopic defects of gallium oxide crystals based on image processing.

[0030] Processor 402 can process digital signals and can include various computing structures, such as a complex instruction set computer structure, a reduced instruction set computer structure, or a structure that implements a combination of multiple instruction sets.

[0031] The memory 401 can be used to store instructions executed by the processor 402 or data related to the execution of instructions. These instructions and / or data may include codes for implementing some functions or all functions of one or more modules described in the embodiments of the present application. The processor 402 of the embodiment of the present disclosure can be used to execute instructions in the memory 401 to implement the method shown above. The memory 401 includes a dynamic random access memory, a static random access memory, a flash memory, an optical storage device, or other memories known to those skilled in the art.

[0032] The embodiment of the present application provides a computer-readable storage medium on which an erasable computer program is stored; when the computer program is executed on a computer device, the computer device executes the above-mentioned gallium oxide crystal micro-defect detection method based on image processing.

[0033] For example, the computer readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc (CD-ROM), a magnetic tape, a floppy disk, an optical data storage device, etc.

Claims

1. A method for detecting microscopic defects of gallium oxide crystals based on image processing, characterized in that: The steps include: Acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; Determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The thermal stress distribution coefficient of the gallium oxide crystal is determined by analyzing the infrared image of the solid-liquid interface; The micro defect generation index of the gallium oxide crystal is determined by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and a micro defect generation warning is performed when the micro defect generation index is greater than a preset micro defect generation threshold.

2. The gallium oxide crystal micro defect detection method based on image processing according to claim 1, characterized in that: The specific steps of determining the solid-liquid interface morphology coefficient include: Acquire the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface, construct a spatial rectangular coordinate system with the bottom plane of the crystal furnace as the xOy plane and the height of the solid-liquid interface as the z-axis, and map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system; The solid-liquid interface morphology coefficient is calculated by the solid-liquid interface three-dimensional image and the preset solid-liquid interface three-dimensional image. The solid-liquid interface morphology coefficient calculation formula is: ； In the formula Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at represents the number of pixels on the x-axis of the three-dimensional image of the solid-liquid interface, Represents the number of pixels on the y-axis of the three-dimensional image of the solid-liquid interface, Represents the solid-liquid interface morphology coefficient.

3. The method for detecting microscopic defects of gallium oxide crystals based on image processing according to claim 1, characterized in that: The specific steps of determining the solid-liquid interface stability coefficient include: Acquire the three-dimensional image of the solid-liquid interface, and map the three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system; The solid-liquid interface stability coefficient is calculated by the solid-liquid interface three-dimensional image, and the solid-liquid interface stability coefficient calculation formula is: ； In the formula Indicates The solid-liquid interface variation coefficient at each monitoring time point is represents the number of monitoring time points, represents the maximum value of the solid-liquid interface variation coefficient, Represents the solid-liquid interface stability coefficient.

4. The gallium oxide crystal micro defect detection method based on image processing according to claim 3 is characterized in that: The calculation formula of the solid-liquid interface variation coefficient is: ； In the formula Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane of the spatial rectangular coordinate system, Indicates The coefficient of change of the solid-liquid interface at each monitoring time point.

5. The gallium oxide crystal micro defect detection method based on image processing according to claim 1, characterized in that: The specific steps of determining the thermal stress distribution coefficient include: Acquiring an infrared image of the solid-liquid interface; The center point of the solid-liquid interface Construct a circle with a radius of The concentric circles, whose radius is calculated through the infrared image of the solid-liquid interface, are The mean circumferential temperature of the concentric circles; The circumferential temperature gradient is calculated by the circumferential temperature mean value, and the circumferential temperature gradient calculation formula is: ； In the formula The radius is The mean circumferential temperature of the concentric circles is The radius is The mean circumferential temperature of the concentric circles is The radius is Circumferential temperature gradient of concentric circles; The circumferential thermal stress is calculated by the circumferential temperature gradient, and the circumferential thermal stress calculation formula is: ； In the formula represents the elastic modulus of the crystal, represents the linear thermal expansion coefficient of the crystal, represents the Poisson's ratio of the crystal, The radius is The circumferential temperature gradient of the concentric circles, The radius is Circumferential thermal stress of concentric circles; The thermal stress distribution coefficient is calculated by the circumferential thermal stress, and the thermal stress distribution coefficient calculation formula is: ； In the formula The radius is The circumferential thermal stress of the concentric circles, represents the number of concentric circles, Represents the thermal stress distribution coefficient.

6. The method for detecting microscopic defects of gallium oxide crystals based on image processing according to claim 1, characterized in that: The specific steps of determining the micro defect generation index of the gallium oxide crystal include: Obtaining the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient; The micro defect generation index is calculated by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient. The micro defect generation index calculation formula is: ； In the formula represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, Represents the micro defect generation index.

7. A gallium oxide crystal micro defect detection system based on image processing, which is implemented based on the gallium oxide crystal micro defect detection method based on image processing according to any one of claims 1 to 6, characterized in that: The system comprises: An image acquisition module is used to acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; A first analysis module is used to determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The second analysis module is used to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image; The micro defect generation warning module is used to determine the micro defect generation index of the gallium oxide crystal by using the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and to issue a micro defect generation warning when the micro defect generation index is greater than a preset micro defect generation threshold.

8. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the gallium oxide crystal micro defect detection method based on image processing as described in any one of claims 1 to 6 by calling the computer program stored in the memory.

9. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are executed on a computer, the computer is caused to execute the gallium oxide crystal micro defect detection method based on image processing as described in any one of claims 1 to 6.

Images