Three-dimensional touch integrated sensing array, equipment and preparation method of three-dimensional touch integrated sensing array

Abstract

The invention relates to a three-dimensional touch integrated sensing array, equipment and a preparation method thereof, electrode patterns of a plurality of photoelectric sensing units are prepared on the same plane and are arranged according to a certain pattern rule to form the sensing array, and the three-dimensional touch integrated sensing array comprises a substrate, a plurality of photoelectric sensing units and a plurality of photoelectric sensing units, the metal cathode is arranged on the substrate; the amorphous silicon photosensitive layer is arranged on the metal cathode layer; the amorphous silicon photosensitive layer is provided with a transparent anode; the protective layer covers the metal cathode, the amorphous silicon photosensitive layer and the transparent anode and is provided with a plurality of through holes; and the metal electrode interconnection layer is arranged on the protective layer. The sensing array provided by the invention can integrate multiple functions of a mouse, a keyboard and a touchpad, increases the diversity of non-touch sensing functions, and has obvious advantages in the aspects of virus protection, fingerprint privacy protection, improvement of the integration of touch equipment, improvement of the service life, improvement of the response speed and the like.

Description

Technical Field

[0001] The present invention relates to the technical field of sensor devices, and in particular to a three-dimensional touch integrated sensor array, equipment and a preparation method thereof. Background Art

[0002] As a medium for issuing commands through direct contact, mice, keyboards, touchpads, etc. are widely used in the fields of laptops, flat-panel displays, monitors, etc. However, existing touch peripheral devices can only issue commands when in contact, and have obvious defects in touch function diversity, integration, virus protection, and fingerprint privacy protection. In addition, these touch devices implement commands by applying mechanical force, and long-term pressing will affect the life and response speed of the device. Summary of the invention

[0003] In order to solve the defects of the prior art, the purpose of the present invention is to provide a three-dimensional touch integrated sensor array, equipment and preparation method thereof. The sensor array integrates the multiple functions of a mouse, keyboard and touchpad into one, improves the integration, and can issue gesture commands without contact, realizes near-field spatial interaction, increases the diversity of non-touch sensing functions, and has obvious advantages in virus protection, fingerprint privacy protection, and improving the life and response speed of touch devices.

[0004] In order to achieve the above objectives, the present invention provides a three-dimensional touch integrated sensor array, comprising:

[0005] A substrate, on which a plurality of photoelectric sensing units are arranged;

[0006] Each of the photoelectric sensing units comprises:

[0007] A metal cathode is disposed on the substrate;

[0008] An amorphous silicon photosensitive layer is arranged on the metal cathode layer; the amorphous silicon photosensitive layer has a transparent anode;

[0009] A protective layer, covering the metal cathode, the amorphous silicon photosensitive layer and the transparent anode, and having a plurality of through holes;

[0010] The metal electrode interconnection layer is arranged on the protective layer and is used to connect the pins of the metal cathode and the transparent anode.

[0011] Furthermore, the through holes correspond to at least partial areas of the metal cathode and the transparent anode respectively.

[0012] Furthermore, the metal electrode interconnection layer is arranged close to the through hole and is used for connecting the pins of the metal cathode and the transparent anode.

[0013] Furthermore, there are a plurality of the metal cathodes, the amorphous silicon photosensitive layers and the transparent anodes, which are arranged on the same substrate in a predetermined pattern.

[0014] On the other hand, the present invention further provides a three-dimensional touch integrated sensing device, including: a sensing device, the sensing device including:

[0015] The three-dimensional touch integrated sensor array as described above;

[0016] A light mask is arranged above the protective layer of the three-dimensional touch integrated sensor array, the top of the light mask is provided with an array of small holes, and the rest of the area is opaque;

[0017] The lens array is arranged on the pinhole array to form a sealed space between the light mask and the two ends of the protective layer; the lens array and the pinhole array have the same period and equal spacing.

[0018] Furthermore, the sensing device also includes a sealing layer arranged outside the lens array, and the focal length of each lens in the lens array is equal to the height of the sealing layer.

[0019] Furthermore, it also includes:

[0020] a reading circuit, an input end of which is electrically connected to the sensing device;

[0021] an analog-to-digital converter, whose input terminal is connected to the output terminal of the reading circuit;

[0022] A neural network recognition module, whose input end is connected to the output end of the analog-to-digital conversion circuit;

[0023] An output module is connected to the output end of the neural network recognition module.

[0024] On the other hand, the present invention also provides a method for preparing the above-mentioned three-dimensional touch integrated sensor array, comprising the following steps:

[0025] A layer of metal cathode is deposited on the substrate, and the metal cathode is subjected to a photolithography process and an etching process to form two metal cathode patterns;

[0026] Growing an amorphous silicon photosensitive layer on each of the two metal cathode patterns, and then growing a transparent anode on the amorphous silicon photosensitive layer, and sequentially forming a transparent anode pattern and an amorphous silicon photosensitive device pattern through photolithography and etching processes;

[0027] Growing a protective layer, the protective layer covers the transparent anode pattern, the metal cathode pattern and the amorphous silicon photosensitive device pattern, and through holes corresponding to the transparent anode pattern and the metal cathode pattern are formed on the protective layer through photolithography and dry etching processes;

[0028] A metal electrode interconnection layer is deposited on the protective layer, and a metal electrode interconnection layer pattern is formed through photolithography and etching processes. The metal electrode interconnection layer is used to connect the pins of the metal cathode and the anode.

[0029] Furthermore, it also includes: a light-proof mask is arranged at both ends and above the protective layer, and a plurality of small holes are opened on the top of the mask, a lens is attached to each of the small holes, and a sealed space is formed between the lens, the mask and both ends of the protective layer.

[0030] Furthermore, the exposure band used in the photolithography process is one of ultraviolet light, visible light, electron beam, and ion beam;

[0031] The etching process is a dry etching process, a wet etching process, or a mixed process of dry and wet etching, wherein:

[0032] The dry etching process is carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, or nitrogen, or in any combination of multiple gases therein;

[0033] The wet etching process uses a single substance solution of ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, or aqua regia, or a mixed solution of any two or three thereof.

[0034] The three-dimensional touch integrated sensor array provided by the present invention has the following beneficial effects compared with the prior art:

[0035] By preparing electrode patterns of multiple photoelectric sensing units on the same plane and arranging them according to certain graphic rules to form a three-dimensional touch integrated sensing array, each photoelectric sensing unit includes: a substrate; a metal cathode, arranged on the substrate; an amorphous silicon photosensitive layer, arranged on the metal cathode layer; the amorphous silicon photosensitive layer has a transparent anode; a protective layer, covering the metal cathode, the amorphous silicon photosensitive layer and the transparent anode, and having multiple through holes; a metal electrode interconnection layer, arranged on the protective layer. It can integrate the functions of a mouse, keyboard and touchpad into one, increase the diversity of non-touch sensing functions, and help improve the integration, service life and response speed of touch devices.

[0036] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0038] Figure 1 A schematic diagram of a three-dimensional touch integrated sensor array structure according to an embodiment of the present invention;

[0039] Figure 2 is a schematic structural diagram of a sensor device according to this embodiment;

[0040] Figure 3 is a schematic diagram of a sensing device before sealing according to an embodiment of the present invention;

[0041] Figure 4 is a schematic diagram of a sensing device after sealing according to an embodiment of the present invention;

[0042] Figure 5 A three-dimensional touch integrated sensing device according to an embodiment of the present invention;

[0043] Figure 6 Schematic diagram of a gesture hovering movement operation sensing device according to an embodiment of the present invention;

[0044] Figure 7 It is a flow chart of a method for preparing a three-dimensional touch integrated sensor array and a sensor device according to an embodiment of the present invention;

[0045] Figure 8 A schematic diagram of forming a metal cathode pattern on a substrate according to an embodiment of the present invention;

[0046] Fig. 9 A schematic diagram of forming a transparent anode pattern and an amorphous silicon photosensitive device pattern on a metal cathode pattern according to an embodiment of the present invention;

[0047] Fig.10 A schematic diagram of growing a protective layer and a protective layer through hole on a transparent anode according to an embodiment of the present invention;

[0048] Fig.11 A schematic diagram of forming a metal electrode interconnection layer pattern on a protective layer according to an embodiment of the present invention;

[0049] Fig.12 is a schematic diagram of a mask according to an embodiment of the present invention. DETAILED DESCRIPTION

[0050] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0051] Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as being limited to the embodiments described herein, which are instead provided for a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are only for exemplary purposes and are not intended to limit the scope of protection of the present invention.

[0052] The term "including" and its variations used herein are open inclusions, i.e., "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description.

[0053] It should be noted that the concepts of “first”, “second”, etc. may be mentioned in the present invention only to distinguish different devices, components or parts, and are not used to limit the order or interdependence of the functions performed by these devices, components or parts.

[0054] It should be noted that the modifications of "one" and "plurality" mentioned in the present invention are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more". "Plurality" should be understood as two or more.

[0055] It should be noted that the three-dimensional touch integrated sensing array in exemplary embodiments 1 and 2 is a panel-level three-dimensional touch sensing unit, which can be composed of a photoelectric sensing unit, and the photoelectric sensing unit includes an amorphous silicon pin diode or an amorphous silicon phototransistor. Exemplary embodiment 3 is described when the photoelectric sensing unit is an amorphous silicon pin diode.

[0056] Example 1

[0057] In an embodiment of the present invention, a three-dimensional touch integrated sensor array is provided, which is a sensor array formed by preparing electrode patterns of multiple photoelectric sensor units on the same plane and arranging them according to a certain pattern rule. Each photoelectric sensor unit includes: a substrate; a metal cathode arranged on the substrate; an amorphous silicon photosensitive layer arranged on the metal cathode layer; the amorphous silicon photosensitive layer has a transparent anode; a protective layer covering the metal cathode, the amorphous silicon photosensitive layer and the transparent anode, and having a plurality of through holes; and a metal electrode interconnection layer arranged on the protective layer.

[0058] Figure 1 The schematic diagram of the structure of the three-dimensional touch integrated sensor array according to the embodiment of the present invention is as follows. Figure 1 The three-dimensional touch integrated sensor array of the present invention is described in detail. Figure 1 As shown, the three-dimensional touch integrated sensing array includes: a substrate 101, a plurality of metal cathodes 102, amorphous silicon photosensitive layers 103 and transparent anodes 104, a protective layer 105, and a metal electrode interconnection layer 106 arranged in sequence on the substrate 101. The protective layer 105 can cover the metal cathode 102, the amorphous silicon photosensitive layer 103 and the transparent anode 104 to provide protection, and through holes 107 are respectively opened in the areas corresponding to the metal cathode 102 and the transparent anode 104 on the protective layer 105 to facilitate subsequent interlayer interconnection. The metal electrode interconnection layer 106 is arranged on the protective layer 105 and is arranged close to the through holes 107, and is used for the pins of the metal cathode 102 and the transparent anode 104 to facilitate the connection of the peripheral circuit, thereby forming a photoelectric sensing array.

[0059] In this embodiment, the through holes 107 correspond to at least a portion of the metal cathode 102 and the transparent anode 104 .

[0060] In this embodiment, the metal cathode 102 can be a single metal layer of molybdenum, copper, aluminum, titanium, niobium, or nickel, or an alloy layer of molybdenum-titanium, molybdenum-niobium, or molybdenum-nickel, or a stacked layer composed of any multiple single metals or alloys thereof.

[0061] In this embodiment, the amorphous silicon photosensitive layer 103 can be one of intrinsic hydrogenated amorphous silicon, phosphorus-doped hydrogenated amorphous silicon, boron-doped hydrogenated amorphous silicon, fluorine-doped amorphous silicon, or a stack of any two or three thereof.

[0062] In this embodiment, the transparent anode 104 can be a stack of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

[0063] In this embodiment, the protection layer 105 may be a single layer formed by one of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, and zirconium oxide, or a stacked layer consisting of any two or three of them.

[0064] In this embodiment, the metal electrode interconnection layer 106 can be a single metal layer of molybdenum, copper, aluminum, titanium, niobium, or nickel, or an alloy layer of molybdenum-titanium, molybdenum-niobium, or molybdenum-nickel, or a stacked layer composed of any multiple single metals or alloys thereof.

[0065] The three-dimensional touch integrated sensor array of this embodiment can integrate the functions of a mouse, keyboard and touchpad into one by means of photoelectric sensing, thereby increasing the diversity of non-touch sensing functions and helping to improve the integration, service life and response speed of touch devices.

[0066] Example 2

[0067] In an embodiment of the present invention, a three-dimensional touch integrated sensing device is also provided. Based on the three-dimensional touch integrated sensing array described in Example 1, an opaque light mask is sealed on the sensing array, and the light mask has a small hole array above the sensing array, and a layer of lens array is correspondingly arranged on the small hole array.

[0068] refer to Figure 5 The three-dimensional touch integrated sensing device includes: a sensing device 1, a reading circuit 2, an analog-to-digital converter 3, a neural network recognition module 4, and an output module 5 electrically connected in sequence, wherein the sensing device 1 includes the three-dimensional touch integrated sensing array described in the above embodiment.

[0069] Figure 2 is a schematic diagram of the structure of the sensor device according to this embodiment, as shown in Figure 2 As shown, a light mask 201 is arranged above the protective layer 105, and a plurality of small holes 202 are opened on the top of the light mask 201 to form a small hole array corresponding to the sensor array, and the rest of the light mask 201 is a light-shielding area. A lens 203 is attached to each small hole 202 to form a lens array with the same period and equal spacing as the small hole array.

[0070] Figure 3 This is a schematic diagram of a sensing device before sealing according to an embodiment of the present invention. Figure 4 Schematic diagram of the sensing device after sealing according to an embodiment of the present invention, as shown in Figure 4 As shown, the lens array and the pinhole array are of the same period and equal spacing, and the focal length of each lens 203 is equal to the height of the sealing layer 204 .

[0071] In this embodiment, the material of the lens 203 can be glass, quartz, germanium, zinc selenide, silicon, calcium fluoride or polymethyl methacrylate.

[0072] In this embodiment, the sensor device 1 is used to sense the signal of external light intensity, and track the position and characteristics of the suspended gesture through the change of the light intensity signal. Among them, the sensor device 1 can realize the conventional keyboard input function, mouse movement and confirmation function, touchpad movement and confirmation function by identifying gesture characteristics, thereby integrating the basic functions of keyboard, mouse and touchpad. Among them, the sensor device 1 can track the characteristics of suspended gestures, thereby realizing three-dimensional touch.

[0073] like Figure 5 As shown, the sensing device 1 is electrically connected to the reading circuit 2 (ROIC), and the gesture input is detected by the sensing device 1 through the photosensitive response. The photosensitive signal detected by the sensing device 1 is read by the reading circuit 2 and converted into a digital signal by the analog-to-digital converter 3 (ADC), and then recognized by the neural network recognition module 3 (RNN or CNN) in the IC (integrated circuit) chip, and finally converted into an instruction and outputted by the output module 4.

[0074] Figure 6 Schematic diagram of a gesture mid-air movement operation sensing device according to an embodiment of the present invention. Figure 6 As shown, the sensor device 1 itself can not only play the role of typing on a traditional keyboard, but also replace the touchpad and mouse of a traditional keyboard. When the gesture moves, the photoelectric response signal of the sensor device 1 will change. The subsequent neural network recognition module 3 recognizes the change and converts it into a corresponding change in the movement of the mouse icon, that is, the mouse icon can automatically follow the gesture to replace the touchpad and mouse, thereby replacing the functions of the touchpad, mouse, etc. to control the movement of the mouse pointer. At the same time, the functions of the left and right buttons and the middle pulley of the touchpad, mouse can also be realized in a similar way, which will not be repeated here.

[0075] The sensing device provided in the embodiment of the present invention adopts the three-dimensional touch integrated sensing array of embodiment 1 to realize the three-dimensional touch sensing function of the mouse, keyboard and touchpad, etc. The electronic display device using this sensing device, such as a laptop computer, a tablet, etc., effectively improves the peripheral integration of the existing electronic display device, realizes the three-dimensional control function, and has the advantages of high integration, three-dimensional touch, high richness of control functions, good virus protection, good fingerprint privacy protection, and long equipment service life. Therefore, it plays an important role in the fields of virus protection, fingerprint privacy protection, and improving the life and response speed of touch devices.

[0076] Example 3

[0077] In an embodiment of the present invention, a method for preparing a three-dimensional touch integrated sensor array and a device is also provided, comprising:

[0078] A layer of metal cathode is deposited on the substrate, and the metal cathode is subjected to a photolithography process and an etching process to form two metal cathode patterns;

[0079] Growing an amorphous silicon photosensitive layer on each of the two metal cathode patterns, and then growing a transparent anode on the amorphous silicon photosensitive layer, and sequentially forming a transparent anode pattern and an amorphous silicon photosensitive device pattern through photolithography and etching processes;

[0080] Growing a protective layer, the protective layer covers the transparent anode pattern, the metal cathode pattern and the amorphous silicon photosensitive device pattern, and through holes corresponding to the transparent anode pattern and the metal cathode pattern are formed on the protective layer through photolithography and dry etching processes;

[0081] Depositing a metal electrode interconnection layer on the protective layer, and forming a metal electrode interconnection layer pattern through photolithography and etching processes, wherein the metal electrode interconnection layer is used to connect the pins of the metal cathode and the anode;

[0082] An opaque light shield is arranged at both ends and above the protective layer, and a plurality of small holes are opened on the top of the light shield, each of which is attached with a lens, and a sealed space is formed between the lens, the light shield and both ends of the protective layer.

[0083] Figure 7 is a flow chart of a method for preparing a three-dimensional touch integrated sensor array and a sensor device according to an embodiment of the present invention. Figure 8-12 This is a schematic diagram of the main process structure in the process of preparing the above-mentioned three-dimensional touch integrated sensor array and sensor device according to an embodiment of the present invention. Figures 7 to 12 The preparation method of the present invention is described in further detail.

[0084] In step 301, a metal cathode 102 is deposited on a substrate 101. The metal cathode 102 is subjected to a photolithography process and an etching process to form a metal cathode pattern. Figure 8 shown.

[0085] In this embodiment, the metal cathode 102 can be a single metal of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, molybdenum-nickel alloy, or a stack of any of the above metals or alloys. The exposure band used in the photolithography process of the metal cathode 102 is any one of ultraviolet light, visible light, electron beam, and ion beam. The etching process of the metal cathode 102 can be a dry etching process or a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in any combination of the above gases; the wet etching process can be carried out with ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, and a mixed solution of any two or three of the above.

[0086] In this embodiment, a buffer layer 108 is disposed on the substrate 101. Figure 8 As shown, the metal cathode 102 is located on at least a portion of the buffer layer 107 .

[0087] In step 302, an amorphous silicon photosensitive layer 103 is grown on the metal cathode pattern, and then a transparent anode 104 of the amorphous silicon photosensitive device is grown, and a photolithography process and an etching process are performed to first form a transparent anode pattern and then form an amorphous silicon photosensitive device pattern. Fig. 9 shown.

[0088] In this embodiment, the amorphous silicon photosensitive layer 103 can be a single layer formed by intrinsic hydrogenated amorphous silicon, phosphorus-doped hydrogenated amorphous silicon, boron-doped hydrogenated amorphous silicon, fluorine-doped amorphous silicon, or a stacked layer composed of any two or three of the above. The transparent anode 104 can be a stacked layer composed of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

[0089] In this embodiment, the exposure band used in the photolithography process described in step 302 can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the wet etching process can be carried out with ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, oxalic acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia solution, and a mixed solution of any two or three of the above.

[0090] In step 303, a protective layer 105 is grown on the transparent anode 104, and a protective layer through hole 108 is formed by photolithography and dry etching. The protective layer 105 is used to protect the above-mentioned amorphous silicon photosensitive device, and the through hole 108 is used for interlayer interconnection, such as Fig.10 shown.

[0091] In this embodiment, the protective layer 105 is a single layer formed of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, or zirconium oxide, or a stacked layer formed by a combination of any two or three of them. The photolithography process described in step 303 uses an exposure band of any one of ultraviolet light, visible light, electron beam, and ion beam; the dry etching process is performed in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or a combination of any of the above gases.

[0092] In step 304, a metal electrode interconnection layer 106 is deposited on the protective layer 105, and a metal electrode interconnection layer pattern is formed by photolithography and etching. The metal electrode interconnection layer 106 is used to connect the pins of the metal cathode 102 and the transparent anode 104 to facilitate the connection of the peripheral circuit. The metal electrode interconnection layer 106 is formed as follows after the photolithography and etching processes. Fig.11 The metal electrode interconnect layer pattern is shown.

[0093] In this embodiment, the metal electrode interconnection layer 106 can be a single metal layer of molybdenum, copper, aluminum, titanium, niobium, or nickel, or an alloy layer of molybdenum-titanium, molybdenum-niobium, or molybdenum-nickel, or a stack of any combination of single metals or alloys thereof. The exposure band used in the photolithography process described in step 304 can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the etching solution used in the wet etching process includes any one of ammonia, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, and aqua regia, or 2 to 3 of them.

[0094] In step 305, a light-proof mask 201 is sealed, a plurality of small holes 202 are opened on the top of the mask 201, and a lens 203 is attached to each small hole 202. Fig.12 As shown, the light mask 201 has a plurality of small holes 202 only above the photoelectric sensor to form a small hole array, and the rest of the area is a light shielding area. A lens array is applied corresponding to the small hole array. The lens array has the same period and equal spacing as the small hole array, and the focal length of each lens is the same as the external sealing layer (reference Figure 5 ) are of equal height.

[0095] Those skilled in the art can understand that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention is described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions recorded in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A three-dimensional touch integrated sensor array, characterized in that: include: A substrate, on which a plurality of photoelectric sensing units are arranged; Each of the photoelectric sensing units comprises: A metal cathode is arranged on the substrate; An amorphous silicon photosensitive layer is arranged on the metal cathode layer; the amorphous silicon photosensitive layer has a transparent anode; A protective layer, covering the metal cathode, the amorphous silicon photosensitive layer and the transparent anode, and having a plurality of through holes; The metal electrode interconnection layer is arranged on the protective layer and is used to connect the pins of the metal cathode and the transparent anode.

2. The three-dimensional touch integrated sensor array according to claim 1, characterized in that: The through holes correspond to at least partial areas of the metal cathode and the transparent anode respectively.

3. The three-dimensional touch integrated sensor array according to claim 1, characterized in that: The metal electrode interconnection layer is arranged close to the through hole and is used for connecting the pins of the metal cathode and the transparent anode.

4. The three-dimensional touch integrated sensor array according to claim 1, characterized in that: There are a plurality of the metal cathodes, the amorphous silicon photosensitive layers and the transparent anodes, which are arranged on the same substrate in a predetermined pattern.

5. A three-dimensional touch integrated sensing device, characterized in that: include: A sensor device, the sensor device comprising: The three-dimensional touch integrated sensor array according to any one of claims 1 to 4; A light mask is arranged above the protective layer of the three-dimensional touch integrated sensor array, wherein a small hole array corresponding to the sensor array is opened on the top of the light mask, and the rest of the area is opaque; The lens array is arranged on the pinhole array to form a sealed space between the light mask and the two ends of the protective layer; the lens array and the pinhole array have the same period and equal spacing.

6. The three-dimensional touch integrated sensing device according to claim 5, characterized in that: The sensing device further includes a sealing layer arranged outside the lens array, and the focal length of each lens in the lens array is equal to the height of the sealing layer.

7. The three-dimensional touch integrated sensing device according to claim 5, characterized in that: Also includes: a reading circuit, an input end of which is electrically connected to the sensing device; an analog-to-digital converter, whose input terminal is connected to the output terminal of the reading circuit; A neural network recognition module, whose input end is connected to the output end of the analog-to-digital conversion circuit; An output module is connected to the output end of the neural network recognition module.

8. A method for preparing the three-dimensional touch integrated sensor array according to any one of claims 1 to 4, characterized in that: The following steps are involved: Depositing a layer of metal cathode on the substrate, wherein the metal cathode is subjected to photolithography and etching processes to form two metal cathode patterns; Growing an amorphous silicon photosensitive layer on each of the two metal cathode patterns, and then growing a transparent anode on the amorphous silicon photosensitive layer, and sequentially forming a transparent anode pattern and an amorphous silicon photosensitive device pattern through photolithography and etching processes; Growing a protective layer, the protective layer covers the transparent anode pattern, the metal cathode pattern and the amorphous silicon photosensitive device pattern, and through holes corresponding to the transparent anode pattern and the metal cathode pattern are formed on the protective layer through photolithography and dry etching processes; A metal electrode interconnection layer is deposited on the protective layer, and a metal electrode interconnection layer pattern is formed through photolithography and etching processes. The metal electrode interconnection layer is used to connect the pins of the metal cathode and the anode.

9. The method for preparing the three-dimensional touch integrated sensor array according to claim 8, characterized in that: Also includes: An opaque light shield is arranged at both ends and above the protective layer, and a plurality of small holes are opened on the top of the light shield, each of which is attached with a lens, and a sealed space is formed between the lens, the light shield and both ends of the protective layer.

10. The method for preparing the three-dimensional touch integrated sensor array according to claim 8, characterized in that: The exposure band adopted in the photolithography process is one of ultraviolet light, visible light, electron beam and ion beam; The etching process is a dry etching process, a wet etching process, or a mixed process of dry and wet etching, wherein: The dry etching process is carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, or nitrogen, or in any combination of multiple gases therein; The wet etching process uses a single substance solution of ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, or aqua regia, or a mixed solution of any two or three thereof.

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