Semiconductor circuit module and manufacturing method thereof

Abstract

The application belongs to the technical field of semiconductor and relates to a semiconductor circuit module and a manufacturing method thereof. The semiconductor circuit module comprises a metal substrate, a plurality of circuit components arranged at preset positions of the metal substrate, a binding metal wire for realizing electrical connection between the plurality of circuit components, a packaging body, an electric control board, a limiting metal base fixedly connected with the electric control board, an ejection frame fixedly connected with the electric control board, and a plurality of limiting pins, one end of each of which is fixedly connected with the metal substrate, and the other end of each of which penetrates through the plastic sealing structure and is fixedly connected with the limiting metal base, the limiting pins being used for electrically connecting the electric control board with the metal substrate, and the ejection frame being used for ejecting the limiting pins from the limiting metal base. Compared with the prior art, the application reduces the development cost of the semiconductor circuit, solves the problem of insulation layer delamination, and improves the reliability of the semiconductor circuit.

Description

TECHNICAL FIELD

[0001] The present application is suitable for the field of semiconductor technology, and in particular relates to a semiconductor circuit module and a manufacturing method thereof. BACKGROUND

[0002] The semiconductor circuit, namely, a module intelligent power system (MIPS), not only integrates power switching devices and driving circuits together, but also internally contains fault detection circuits for overvoltage, overcurrent and overheating, and can send detection signals to a CPU or a DSP for interrupt processing. The MIPS is composed of high-speed low-power chips, optimized gate-level driving circuits and fast protection circuits. Even if a load accident or improper use occurs, the MIPS itself can not be damaged. The MIPS generally uses IGBT as a power switching element, and internally contains an integrated structure of a current sensor and a driving circuit.

[0003] The existing MIPS module intelligent power system IC driving control circuit, MIPS sampling amplification circuit and PFC current protection circuit and other low-voltage control circuits and high-voltage semiconductor circuit modules are arranged on the same board to form an inverter circuit. At the same time, the existing MIPS module intelligent power system only integrates a single MIPS module, and the integration of multiple MIPS module intelligent power systems has not been realized. In the face of market miniaturization and low-cost competition, higher requirements are put forward for the high integration and high heat dissipation technology of the MIPS module intelligent power system.

[0004] Therefore, there is an urgent need for a new semiconductor circuit module and a manufacturing method thereof to solve the above problems. SUMMARY

[0005] The present application provides a semiconductor circuit module and a manufacturing method thereof, which aims to solve the problem of delamination of the insulating layer in the existing semiconductor circuit, improve the reliability of the semiconductor circuit, and according to different pin schemes inside the semiconductor circuit, the product design flexibility is improved, and the development cost is reduced.

[0006] In a first aspect, the present application provides a semiconductor circuit module, which comprises:

[0007] A metal substrate;

[0008] A plurality of circuit components, the plurality of circuit components being arranged at predetermined positions of the metal substrate;

[0009] A binding metal wire for realizing electrical connection between the plurality of circuit components;

[0010] An encapsulation body encapsulates the metal substrate, the plurality of circuit components and the bonding metal wires into a plastic encapsulation structure.

[0011] An electric control board is fixedly connected with the plastic encapsulation structure.

[0012] A limiting metal base is fixedly connected with the electric control board.

[0013] An ejection frame is fixedly connected with the electric control board.

[0014] A plurality of limiting pins have one end fixedly connected with the metal substrate and the other end fixedly connected with the limiting metal base through the plastic encapsulation structure, and the limiting pins are used to electrically connect the electric control board with the metal substrate, and the ejection frame is used to eject the limiting pins from the limiting metal base.

[0015] Preferably, the limiting pin comprises a pin welding part fixed to the metal substrate, two extension parts respectively fixed to opposite ends of the pin welding part and having elasticity, and two limiting parts formed by bending the two extension parts towards one end of the pin welding part close to the pin welding part, and the limiting parts are fixedly connected with the limiting metal base through the plastic encapsulation structure.

[0016] Preferably, the ejection frame comprises a left support and a right support respectively fixed to the electric control board and a reset spring connecting the left support and the right support.

[0017] Preferably, the limiting metal base comprises a plurality of metal clamping grooves, and the limiting parts are fixedly embedded in the metal clamping grooves.

[0018] Preferably, the plurality of limiting pins are respectively fixed to opposite ends of the metal substrate.

[0019] Preferably, the metal substrate further comprises an insulating layer, a copper foil layer and a protective layer, the insulating layer is attached to one side of the metal substrate, the copper foil layer is laminated to the side of the insulating layer away from the metal substrate, and the protective layer is attached to the side of the copper foil layer away from the insulating layer.

[0020] Preferably, the circuit wiring layer is made by etching the copper foil layer.

[0021] Preferably, the circuit components comprise a patch capacitor, a patch resistor and a component, and the patch capacitor, the patch resistor and the component are respectively attached to the metal substrate.

[0022] In a second aspect, the application further provides a manufacturing method of the semiconductor circuit module as described in the above embodiments, and the manufacturing method comprises the following steps:

[0023] S1, placing a metal substrate on a special carrier;

[0024] S2, through the reserved component mounting position of the copper foil layer of the metal substrate, a semiconductor inverter circuit chip is attached to the component mounting position by brushing tin paste or dotting silver glue through an automatic die bonding device;

[0025] S3, a high-voltage power device is attached to a surface silver-plated copper heat sink through a soft solder die bonder to form a component semi-finished product;

[0026] S4, the component semi-finished product is attached to the component mounting position through an automatic patch SMT device for resistance reduction and capacity component;

[0027] S5, the pins are placed on the corresponding welding position of the metal substrate through a mechanical hand or manually, and the metal substrate including the special carrier is passed through a reflow furnace, and all the circuit components are welded to the corresponding mounting position;

[0028] S6, the welding quality of the circuit components is detected through visual inspection AOI equipment, and the flux and aluminum scraps remaining on the metal substrate are removed through spraying and ultrasonic;

[0029] S7, the circuit components and the circuit wiring layer are electrically connected through the binding metal wires;

[0030] S8, the metal substrate circuit is molded in a special mold through a packaging device, and then marked through laser marking;

[0031] S9, post-curing stress relief treatment is performed through a high-temperature oven, and electrical parameter testing is performed to form a final qualified product.

[0032] Compared with the prior art, the metal substrate welding limiting pin is connected with the electric control board through the limiting pin, the limiting pin can solve the problem of insulation layer delamination at the pin welding position caused by stress generated during plastic packaging due to pin welding tolerance; the limiting pin structure can effectively avoid the influence of human body static electricity on the internal chip; the limiting pin structure does not need to cut the ribs for forming, which reduces the equipment procurement cost and improves the production efficiency; the limiting pin structure proposed in the application has a self-locking function, which ensures the connection reliability; the metal substrate and the electric control board do not need to be welded through wave soldering, which solves the welding defect problem and improves the product reliability; the application scenario of frequently replacing semiconductor circuits in the research and development, testing and failure analysis stages can be facilitated, the efficiency is improved, the damage of the electric control board is reduced, and the product reliability is improved. BRIEF DESCRIPTION OF DRAWINGS

[0033] The application will be described in detail below with reference to the drawings. The above and other aspects of the present application will become more apparent and more readily appreciated by referring to the following detailed description, taken in conjunction with the accompanying drawings, in which:

[0034] Figure 1 is a structural schematic diagram of an electric control board of a semiconductor circuit module provided by an embodiment of the present application;

[0035] Figure 2 is a structural schematic diagram of a plastic package structure provided by an embodiment of the present application;

[0036] Figure 3 is a structural schematic diagram of a limiting pin provided by an embodiment of the present application;

[0037] Figure 4 is a structural schematic diagram of a semiconductor circuit module provided by an embodiment of the present application;

[0038] Figure 5 is a flow chart of a preparation method of a semiconductor circuit module provided by an embodiment of the present application. DETAILED DESCRIPTION

[0039] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.

[0040] Please refer to Figures 1-4 , in a first aspect, the present application provides a semiconductor circuit module, the semiconductor circuit module comprises: a metal substrate 1, a plurality of circuit components, a binding metal wire 12, a package body 11, an electric control board 15, a limiting metal base 13, an ejection frame 16, and a plurality of limiting pins 10.

[0041] The plurality of circuit components are arranged at the preset positions of the metal substrate 1.

[0042] The binding metal wire 12 is used to realize the electrical connection between the plurality of circuit components, and the binding metal wire 12 is one or more of gold, aluminum, copper and the like.

[0043] The package body 11 encapsulates the metal substrate 1, the plurality of circuit components and the binding metal wire 12 into a plastic package structure 14. Specifically, the package body 11 is a powdery molding compound formed by mixing epoxy resin as a base resin, high-performance phenolic resin as a curing agent, silica powder as a filler, and various additives, and is extruded into a mold cavity by a heat transfer molding method to embed a semiconductor chip therein, and is simultaneously cross-linked and cured to form a device with a certain external structure.

[0044] The electric control board 15 is fixedly connected with the plastic sealing structure 14; specifically, the electric control board 15 is the control center of the whole semiconductor circuit module, the plastic sealing structure 14 not only integrates the power switching device and the driving circuit together, but also internally contains the fault detection circuit of overvoltage, overcurrent and overheat, and can send the detection signal to the CPU or DSP for interrupt processing.

[0045] The limiting metal base 13 is fixedly connected with the electric control board 15;

[0046] The ejection frame 16 is fixedly connected with the electric control board 15;

[0047] One end of the limiting pin 10 is fixedly connected with the metal substrate 1, the other end of the limiting pin 10 penetrates through the plastic sealing structure 14 and is fixedly connected with the limiting metal base 13, the limiting pin 10 is used for electrically connecting the electric control board 15 with the metal substrate 1, and the ejection frame 16 is used for ejecting the limiting pin 10 from the limiting metal base 13. The material of the limiting pin 10 adopts C194(-1 / 2H) (chemical composition: Cu(≧97.0) Fe: 2.4 P: 0.03 Zn: 0.12) or KFC(-1 / 2H) (chemical composition: Cu(≧99.6) Fe: 0.1 (0.05-0.15) P: 0.03 (0.025-0.04)), a 0.5mm copper plate material is formed into a required shape through stamping and bending processes, and then the surface is plated with nickel with a thickness of 0.1-0.5um and then plated with tin with a thickness of 2-5um.

[0048] In the embodiment of the application, the limiting pin 10 comprises a pin welding part 001 fixed to the metal substrate 1, two extension parts 002 fixed to opposite ends of the pin welding part 001 respectively and having elasticity, and two limiting parts 003 formed by bending the two extension parts 002 towards one end of the pin welding part 001, the limiting parts 003 penetrate through the plastic sealing structure 14 and are fixedly connected with the limiting metal base 13. Specifically, the welding capacity of the limiting pin 10 and the metal substrate 1 can be effectively improved through the pin welding part 001.

[0049] In the embodiment of the application, the ejection frame 16 comprises a left support 005 and a right support 004 fixed to the electric control board 15 respectively, and a reset spring 006 connecting the left support 005 and the right support 004. By pressing the left support 005 and the right support 004, the limiting parts 003 of the limiting pin 10 can be ejected from the metal clamping groove 007, so that the separation between the plastic sealing structure 14 and the electric control board 15 is realized; the reset spring 006 resets the left and right supports 004 after being pressed.

[0050] In the embodiment of the present application, the limiting metal base 13 comprises a plurality of metal clamping grooves 007, and the limiting part 003 is embedded and fixed in the metal clamping groove 007.

[0051] Specifically, the plastic package structure 14 (i.e. semiconductor circuit) is installed and fixed through the limiting metal base 13, and direct contact between the metal substrate 1 and the electric control board 15 is prevented, so that condensed water on the electric control board 15 does not penetrate into the internal circuit on the metal substrate 1. Since the limiting pin 10 is integrally formed by bending and has high strength, and two limiting parts 003 are designed, one limiting part 003 is in contact with the inner wall of the metal clamping groove 007 to realize electrical connection between the limiting pin 10 and the metal clamping groove 007, and the other limiting part 003 is connected with the limiting hole reserved in the metal clamping groove 007 to realize installation and fixation of the limiting pin 10 and the metal clamping groove 007.

[0052] In the embodiment of the present application, a plurality of limiting pins 10 are respectively fixed at opposite ends of the metal substrate 1.

[0053] In the embodiment of the present application, the metal substrate 1 further comprises an insulating layer 02 and a protective layer 04, the insulating layer 02 is attached to one side of the metal base material 01, the copper foil layer 03 is laminated on the side of the insulating layer 02 away from the metal base material 01, and the protective layer 04 is attached to the side of the copper foil layer 03 away from the insulating layer 02. Specifically, the metal base material 01 serves as a carrier for the entire internal circuit of the semiconductor circuit and plays a role in heat dissipation for the entire semiconductor circuit; the insulating layer 02 prevents internal circuit short circuit and leakage caused by power supply of the circuit wiring layer and the metal base material 01; the copper foil layer 03 forms the required circuit by etching the copper foil layer 03 to make the circuit wiring layer; the protective layer 04, also known as the green oil layer, prevents tin from being applied to places where it should not be applied, increases the voltage resistance between lines, prevents short circuit caused by oxidation or pollution of the lines, and protects the lines.

[0054] In the embodiment of the present application, the circuit wiring layer is made by etching the copper foil layer 03.

[0055] In an embodiment of the present invention, the circuit components include chip capacitor 06, chip resistor 05, and component 07, which are respectively attached to the metal substrate 1. Specifically, chip resistor 05 is connected to the gate of the IGBT chip in the semiconductor circuit to limit the switching speed of the IGBT by limiting the current; chip capacitor 06 performs filtering, coupling, and bootstrapping functions in the semiconductor circuit; component 07 constitutes the chip required for the functional circuit within the semiconductor circuit; semi-finished component 08 is formed by attaching high-voltage power components with high heat dissipation requirements to a small heat sink 09 to form semi-finished component 08; the circuit components also include heat sink 09, which uses a copper surface silver plating process to achieve better adhesion between surface component 07 and heat sink 09, thereby improving heat dissipation capacity.

[0056] Compared with the prior art, the present invention connects the metal substrate to the electronic control board through the limit pins by welding the limit pins. The limit pins can solve the problem of delamination of the insulation layer at the pin welding point caused by the stress generated by the pin welding tolerance during plastic sealing; this limit pin structure can effectively avoid the influence of human static electricity on the internal chip; this limit pin structure does not require the pin to be cut and formed, which reduces the equipment procurement cost and improves production efficiency; the present invention proposes a limit pin structure with a self-locking function to ensure connection reliability; there is no need for wave soldering between the metal substrate and the electronic control board, which solves the problem of welding defects and improves product reliability; it can facilitate application scenarios where semiconductor circuits need to be frequently replaced in the research and development, testing and failure analysis stages, improves efficiency, reduces damage to the electronic control board, and improves product reliability.

[0057] Second, please refer to Figure 5 The present invention further provides a method for manufacturing a semiconductor circuit module as described in the above embodiment, the manufacturing method comprising the following steps:

[0058] S1. Place the metal substrate on a special carrier;

[0059] S2. Mounting the semiconductor inverter circuit chip on the component mounting position reserved on the copper foil layer of the metal substrate by applying solder paste or dispensing silver glue through an automatic die bonding device;

[0060] S3. Using a soft solder die bonder, the high-voltage power device is mounted on a silver-plated copper heat sink to form a semi-finished component.

[0061] S4, using automatic SMT equipment to reduce resistance and capacity, and mount the semi-finished components on the component installation position;

[0062] S5. Place the pins on the corresponding soldering positions of the metal substrate by a robot or manually, pass the metal substrate and the special carrier together through a reflow furnace, and solder all the circuit components to the corresponding mounting positions;

[0063] S6. Inspect the welding quality of the circuit components using a visual inspection AOI device, and remove the flux and aluminum chips remaining on the metal substrate using spraying and ultrasound;

[0064] S7, electrically connecting the circuit components and the circuit wiring layer through the binding metal wires;

[0065] S8. Plastic-encapsulating the metal substrate circuit in a specific mold using packaging equipment, and then marking it with a laser.

[0066] S9. Post-curing stress relief treatment is carried out in a high-temperature oven, and electrical parameter testing is performed to form the final qualified product.

[0067] The present invention provides a method for manufacturing a semiconductor circuit module, which can prepare the semiconductor circuit module as described in the above embodiments, and the effects achieved are the same, which will not be described in detail here.

[0068] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0069] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only a preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, which are all within the protection of the present invention.

Claims

1. A semiconductor circuit module, characterized in that: The semiconductor circuit module includes: metal substrate; A plurality of circuit components, wherein the plurality of circuit components are arranged at preset positions on the metal substrate; Binding metal wires, the binding metal wires being used to achieve electrical connection between the plurality of circuit components; A package body, wherein the package body packages the metal substrate, the plurality of circuit components, and the binding metal wires into a plastic package structure; An electric control board, the electric control board is fixedly connected to the plastic packaging structure; A limiting metal base, the limiting metal base is fixedly connected to the electric control board; An ejector frame, the ejector frame being fixedly connected to the electric control board; A plurality of limiting pins, one end of each limiting pin being fixedly connected to the metal substrate, the other end of each limiting pin penetrating the plastic package structure and fixedly connected to the limiting metal base, the limiting pins being used to electrically connect the electronic control board to the metal substrate, and the ejection frame being used to eject the limiting pins from the limiting metal base; The limiting pin includes a pin welding portion fixed to the metal substrate, two elastic extension portions fixed to opposite ends of the pin welding portion, and two limiting portions formed by bending the two extension portions toward one end close to the pin welding portion. The limiting portions penetrate the plastic package structure and are fixedly connected to the limiting metal base. The ejection frame includes a left bracket and a right bracket respectively fixed to the electric control board and a return spring connecting the left bracket and the right bracket; The limiting metal base includes a plurality of metal positioning grooves, and the limiting portion is embedded and fixed in the metal positioning grooves.

2. The semiconductor circuit module according to claim 1, wherein The plurality of limiting pins are respectively fixed at two opposite ends of the metal substrate.

3. The semiconductor circuit module according to claim 1, wherein: The metal substrate also includes an insulating layer, a copper foil layer and a protective layer. The insulating layer is attached to one side of the metal substrate, the copper foil layer is pressed onto the side of the insulating layer away from the metal substrate, and the protective layer is attached to the side of the copper foil layer away from the insulating layer.

4. The semiconductor circuit module according to claim 3, wherein: A circuit wiring layer is formed by etching the copper foil layer.

5. The semiconductor circuit module according to claim 1, wherein: The circuit components include chip capacitors, chip resistors and components, and the chip capacitors, chip resistors and components are respectively mounted on the metal substrate.

6. A method for manufacturing a semiconductor circuit module, for manufacturing the semiconductor circuit module according to any one of claims 1 to 5, characterized in that: The manufacturing method comprises the following steps: S1. Place the metal substrate on a special carrier; S2. Mounting the semiconductor inverter circuit chip on the component mounting position reserved on the copper foil layer of the metal substrate by applying solder paste or dispensing silver glue through an automatic die bonding device; S3. Using a soft solder die bonder, the high-voltage power device is mounted on a silver-plated copper heat sink to form a semi-finished component. S4, using automatic SMT equipment to reduce resistance and capacity, and mount the semi-finished components on the component installation position; S5. Place the pins on the corresponding soldering positions of the metal substrate by a robot or manually, pass the metal substrate and the special carrier together through a reflow furnace, and solder all the circuit components to the corresponding mounting positions; S6. Inspect the welding quality of the circuit components using a visual inspection AOI device, and remove the flux and aluminum chips remaining on the metal substrate using spraying and ultrasound; S7, electrically connecting the circuit components and the circuit wiring layer through the binding metal wires; S8. Plastic-encapsulating the metal substrate circuit in a specific mold using packaging equipment, and then marking it with a laser. S9. Post-curing stress relief treatment is carried out in a high-temperature oven, and electrical parameter testing is performed to form the final qualified product.

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