Radio frequency signal source and power adjusting method thereof
By adopting the dual -half -bridge circuit module and power adjustment module in the radio frequency signal source, the power of the radio frequency signal is adjusted, and the problem of high requirements for the regulation of DC power voltage in the existing technology has been solved. Power adjustment.
Patent Information
- Application Number
- CN202411340013.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2025-01-21
AI Technical Summary
Due to the high requirements for the voltage regulation range of adjustable DC power supply, existing RF signal sources are difficult to match off ready-made shelf products, resulting in high system complexity, high cost and complex production and testing steps, which is not conducive to the production and promotion of RF signal sources.
A dual half-bridge circuit module is used to adjust the DC voltage signal into a pulse width modulation signal, and by adjusting the phase of the two bridge arms, the power of the RF signal output by the RF resonant cavity is adjusted, thereby reducing the voltage adjustment range requirements of the DC power supply.
It achieves finely adjustable power of the RF signal source, reduces the requirements for DC power supply, can match existing shelf products, greatly reduces production and testing costs, and simplifies the system structure.
Smart Images
Figure CN119341550A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of radio frequency communication technology, and in particular to a radio frequency signal source and a power regulation method thereof. Background Art
[0002] RF signal source is an instrument specially used to generate RF signal, with output frequency up to 40GHz, maximum output power of +26dBm, and high purity phase noise as low as -135dBc / Hz. RF signal source is often used to calibrate spectrum analyzers, modulation analyzers, power meters, frequency meters, RF millivolt meters, high-frequency digital oscilloscopes and many other RF radio measurement instruments.
[0003] With the booming development of radio frequency medical treatment, radio frequency signal source technology is also facing some bottlenecks. For example, in order to achieve fine adjustment of output power, most existing radio frequency signal sources adopt a multi-level topology solution. The most common one is the three-level solution of "power factor correction + adjustable DC power supply + radio frequency power amplifier". The output power can be finely adjusted by adjusting the voltage of the adjustable DC power supply to meet the needs of actual medical equipment.
[0004] The above-mentioned existing RF signal source adopts a three-level solution to adjust the output power. The whole system is highly complex and costly, and the production and testing steps are relatively complicated, which is not conducive to the production and promotion of the RF signal source.
[0005] In addition, the RF signal source needs to be adjusted within a fairly large power range, so the voltage adjustment range of the adjustable DC power supply must be very wide, which is generally difficult to match with off-the-shelf products. On the one hand, this increases the difficulty of implementing the RF signal source, and on the other hand, it also increases the production and testing costs of the RF signal source. Summary of the invention
[0006] The embodiment of the present application provides a radio frequency signal source to solve the technical problem in the prior art that the radio frequency signal source has high requirements for the DC power supply, requires the voltage adjustment range of the adjustable DC power supply to be very wide, and is difficult to match with ready-made shelf products.
[0007] The present application provides a radio frequency signal source, including:
[0008] A DC power supply, used for providing a DC voltage signal;
[0009] A dual half-bridge circuit module, comprising two half-bridges connected in parallel, wherein the half-bridges are used to adjust the DC voltage signal into a pulse width modulation signal of a set waveform;
[0010] A radio frequency resonant cavity, used for frequency selection and enhancement of the pulse width modulation signal to generate a radio frequency signal of a specific frequency;
[0011] The power adjustment module is connected to the dual half-bridge circuit module and is used to adjust the phases of the two bridge arms, thereby adjusting the width of the pulse width modulation signal, thereby adjusting the power of the radio frequency signal output by the radio frequency resonant cavity.
[0012] Preferably, the dual half-bridge circuit module includes two parallel half-bridge circuits composed of four switching tubes, the input ends of the two half-bridge circuits are respectively connected to the positive and negative poles of the DC power supply included in the dual half-bridge circuit module, and the output ends of the two half-bridge circuits are respectively connected to the positive and negative pole input ends of the RF resonant cavity.
[0013] Furthermore, the switch tube is a MOS tube.
[0014] Furthermore, the dual half-bridge circuit module includes a first MOS tube, a second MOS tube, a third MOS tube and a fourth MOS tube;
[0015] The source of the first MOS tube is connected to the drain of the second MOS tube to form a first half-bridge circuit; the source of the third MOS tube is connected to the drain of the fourth MOS tube to form a second half-bridge circuit;
[0016] The drain of the first MOS tube and the drain of the third MOS tube are both connected to the positive electrode of the direct current power supply DC, and the source of the second MOS tube and the source of the fourth MOS tube are both connected to the negative electrode of the direct current power supply DC;
[0017] The source of the first MOS tube and the drain of the fourth MOS tube are respectively connected to the positive and negative input terminals of the radio frequency resonant cavity;
[0018] The gate of the first MOS tube, the gate of the second MOS tube, the gate of the third MOS tube, and the gate of the fourth MOS tube are all connected to the power regulation module.
[0019] Preferably, the power regulation module regulates the power of the radio frequency signal output by the radio frequency resonant cavity by regulating the phase of the driving signal provided to the gates of the four MOS tubes.
[0020] Preferably, the DC power supply is a DC power supply without a voltage regulation function.
[0021] The embodiment of the present application also provides a power regulation method for the above-mentioned RF signal source, which adjusts the phase shift angles of the first MOS tube and the third MOS tube through the power regulation module, so that the dual half-bridge circuit module outputs pulse width modulation signals with different pulse widths, thereby realizing the power regulation of the RF signal output by the RF resonant cavity.
[0022] Preferably, the driving waveforms of the first MOS transistor and the second MOS transistor are complementary, and the driving waveforms of the third MOS transistor and the fourth MOS transistor are complementary.
[0023] Preferably, the adjustment range of the phase shift angles of the first MOS tube and the third MOS tube is 0-180°.
[0024] Preferably, the larger the phase shift angles of the first MOS transistor and the third MOS transistor are, the wider the pulse width of the pulse width modulation signal is, and the greater the power of the radio frequency signal output by the radio frequency resonant cavity is.
[0025] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
[0026] 1. The RF signal source provided by this application uses a dual half-bridge circuit module to adjust the DC voltage signal to a pulse width modulation signal of a set waveform, and adjusts the power of the RF signal output by the RF resonant cavity by adjusting the phase of the two bridge arms. Therefore, the DC power supply does not have a voltage regulation function, so the requirements for the DC power supply are greatly reduced, and it can be matched to existing shelf products, greatly reducing the production and testing costs of the RF signal source.
[0027] 2. The RF signal source provided by the present application has a simple overall structure and convenient power adjustment operation, which makes it possible to widely promote the RF signal source in many fields. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0029] Figure 1 This is a structural block diagram of the radio frequency signal source provided in an embodiment of the present application;
[0030] Figure 2 A circuit schematic diagram of a radio frequency signal source provided in an embodiment of the present application;
[0031] Figure 3 Schematic diagram of phase shift adjustment of four MOS tubes in an embodiment of the present application.
[0032] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION
[0033] The embodiment of the present application provides a radio frequency signal source to solve the technical problem in the prior art that the radio frequency signal source has high requirements for the DC power supply, requires the voltage adjustment range of the adjustable DC power supply to be very wide, and is difficult to match with ready-made shelf products.
[0034] In order to better understand the above technical solution, exemplary embodiments will be described in detail here, and examples thereof are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are only examples of devices consistent with some aspects of the present application as detailed in the attached claims.
[0035] Figure 1 This is a structural block diagram of a radio frequency signal source provided in an embodiment of the present application, wherein the radio frequency signal source comprises:
[0036] A DC power supply, used for providing a DC voltage signal;
[0037] A dual half-bridge circuit module, comprising two half-bridges connected in parallel, wherein the half-bridges are used to adjust the DC voltage signal into a pulse width modulation signal of a set waveform;
[0038] A radio frequency resonant cavity, used for frequency selection and enhancement of the pulse width modulation signal to generate a radio frequency signal of a specific frequency;
[0039] The power adjustment module is connected to the dual half-bridge circuit module and is used to adjust the phases of the two bridge arms, thereby adjusting the width of the pulse width modulation signal, thereby adjusting the power of the radio frequency signal output by the radio frequency resonant cavity.
[0040] Among them, the DC power supply can be purchased from existing very mature shelf products. It can be a DC power supply without voltage regulation function, such as 24V DC power supply, 48V DC power supply; it can also be a DC power supply with a smaller voltage regulation range.
[0041] Because the RF signal source provided in the embodiment of the present application adjusts the phase of the two bridge arms of the dual half-bridge circuit module through the power adjustment module, and then adjusts the width of the pulse width modulation signal, that is, adjusts the energy of the pulse width modulation signal injected into the RF resonant cavity, thereby realizing the power adjustment of the RF signal output by the RF resonant cavity. Therefore, the DC power supply does not have the voltage adjustment function, so the requirements for the DC power supply are greatly reduced, and it can be matched with existing shelf products, greatly reducing the production and testing costs of the RF signal source.
[0042] Figure 2 The circuit schematic diagram of the radio frequency signal source provided in the embodiment of the present application is as follows: Figure 2 As shown, the dual half-bridge circuit module includes two parallel half-bridge circuits composed of four switching tubes Q1~Q4, the input ends of the two half-bridge circuits are respectively connected to the positive and negative poles of the DC power supply DC, and the output ends of the two half-bridge circuits are respectively connected to the positive and negative input ends of the RF resonant cavity.
[0043] In a preferred embodiment, the switch tube is a MOS tube.
[0044] The specific circuit structure is as follows:
[0045] The source of the first MOS transistor Q1 is connected to the drain of the second MOS transistor Q2 to form a first half-bridge circuit; the source of the third MOS transistor Q3 is connected to the drain of the fourth MOS transistor Q4 to form a second half-bridge circuit.
[0046] The drain of the first MOS tube Q1 and the drain of the third MOS tube Q3 are both connected to the positive electrode of the direct current power supply DC, and the source of the second MOS tube Q2 and the source of the fourth MOS tube Q4 are both connected to the negative electrode of the direct current power supply DC.
[0047] The source of the first MOS transistor Q1 and the drain of the fourth MOS transistor Q4 are connected to the positive and negative input terminals of the radio frequency resonant cavity respectively.
[0048] The gate of the first MOS transistor Q1 , the gate of the second MOS transistor Q2 , the gate of the third MOS transistor Q3 , and the gate of the fourth MOS transistor Q4 are all connected to the power regulation module.
[0049] In the first half-bridge circuit, the driving waveforms of the first MOS transistor Q1 and the second MOS transistor Q2 are complementary, and are close to a 50% duty cycle.
[0050] In the second half-bridge circuit, the driving waveforms of the third MOS transistor Q3 and the fourth MOS transistor Q4 are complementary, and are close to a 50% duty cycle.
[0051] The driving signals of the first half-bridge circuit and the second half-bridge circuit can be set to phase shift, and the purpose of the phase shift is to adjust the voltage waveform between the two bridge arms.
[0052] The power regulating module may be a single chip microcomputer, a microprocessor, a control chip, etc. The power regulating module is used to regulate the phase of the driving signal provided to the gates of the four MOS tubes.
[0053] The power adjustment method of the RF signal source provided in the above embodiment is as follows:
[0054] The phase of the driving signal provided to the gates of the four MOS tubes is adjusted by the power adjustment module, the driving waveforms of the first MOS tube Q1 and the second MOS tube Q2 are complementary, and the driving waveforms of the third MOS tube Q3 and the fourth MOS tube Q4 are complementary. By adjusting the phase shift angle of the first MOS tube Q1 and the third MOS tube Q3, the voltage waveform between the two bridge arms is adjusted, and pulse width modulation signals with different pulse widths are output, so as to achieve the adjustment of the power of the radio frequency signal output by the radio frequency resonant cavity.
[0055] The larger the phase shift angle of the first MOS transistor Q1 and the third MOS transistor Q3, the wider the pulse width of the pulse width modulation signal injected into the RF resonant cavity, and thus the greater the energy, the greater the power of the RF signal output by the RF resonant cavity. Conversely, the smaller the phase shift, the smaller the power.
[0056] Figure 3 Schematic diagram of phase shift adjustment of four MOS tubes in the embodiment of the present application. Figure 3 As shown, the driving waveforms of the first MOS tube Q1 and the second MOS tube Q2 are complementary, and the driving waveforms of the third MOS tube Q3 and the fourth MOS tube Q4 are complementary, Td is the dead time to ensure that the bridge arm is not directly connected. Tphi is the phase shift time of the first MOS tube Q1 and the third MOS tube Q3, which can be changed between 0 and half a cycle, that is, the adjustment range of the phase shift angle of the first MOS tube Q1 and the third MOS tube Q3 is 0 to 180°.
[0057] Combination Figure 2 and Figure 3 Only when the first MOS tube Q1 and the fourth MOS tube Q4 are turned on at the same time (the third MOS tube Q3 and the second MOS tube Q2 are not turned on at this time), or the third MOS tube Q3 and the second MOS tube Q2 are turned on at the same time (the first MOS tube Q1 and the fourth MOS tube Q4 are not turned on at this time), there will be a voltage difference between the two bridge arms.
[0058] Therefore, the width of the pulse width modulation signal injected into the RF resonant cavity is proportional to the phase shift angle of the first MOS transistor Q1 and the third MOS transistor Q3. The larger the phase shift angle, the greater the power of the RF signal output by the RF resonant cavity. Conversely, the smaller the phase shift angle, the smaller the power.
[0059] If the phase shift angle of the first MOS tube Q1 and the third MOS tube Q3 is 0 degrees, the pulse width modulation signal injected into the RF resonant cavity is 0, and the power of the RF signal output by the RF resonant cavity is 0; if the phase shift angle of the first MOS tube Q1 and the third MOS tube Q3 is 180 degrees, the pulse width of the pulse width modulation signal injected into the RF resonant cavity is the widest, and the power of the RF signal output by the RF resonant cavity is the largest.
[0060] In this way, by adjusting the phase shift angles of the first MOS transistor Q1 and the third MOS transistor Q3, the power of the radio frequency signal output by the radio frequency resonant cavity can be finely adjusted.
[0061] The RF signal source provided in this embodiment uses a dual half-bridge circuit module to adjust the DC voltage signal to a pulse width modulation signal of a set waveform, and adjusts the power of the RF signal output by the RF resonant cavity by adjusting the phase of the two bridge arms, which can achieve fine power adjustment at low cost. There is no requirement for a DC power supply, and existing very mature shelf products can be purchased, which is easy to implement. The overall structure of the RF signal source is simple, and the power adjustment operation is convenient, which makes it possible to promote the RF signal source on a large scale in many fields.
[0062] It should be understood that although the terms "first", "second", etc. may be used herein to describe various units, these units should not be limited by these terms. These terms are used only to distinguish one unit from another. For example, a first unit may be referred to as a second unit, and similarly, a second unit may be referred to as a first unit without departing from the scope of the exemplary embodiments.
[0063] The above is only a preferred embodiment of the present application, and is not any formal or substantial limitation to the present application. It should be pointed out that ordinary technicians in this technical field can make several improvements and supplements without departing from the method of the present application, and these improvements and supplements should also be regarded as the protection scope of the present application. Any technician familiar with this profession can make some changes, modifications and evolutions of the technical content disclosed above without departing from the spirit and scope of the present application, which are equivalent embodiments of the present application; at the same time, any changes, modifications and evolutions of any equivalent changes made to the above embodiments based on the substantial technology of the present application are still within the scope of the technical solution of the present application.
Claims
1. A radio frequency signal source, characterized in that: include: A DC power supply, used for providing a DC voltage signal; A dual half-bridge circuit module, comprising two half-bridges connected in parallel, wherein the half-bridges are used to adjust the DC voltage signal into a pulse width modulation signal of a set waveform; A radio frequency resonant cavity, used for frequency selection and enhancement of the pulse width modulation signal to generate a radio frequency signal of a specific frequency; The power adjustment module is connected to the dual half-bridge circuit module and is used to adjust the phases of the two bridge arms, thereby adjusting the width of the pulse width modulation signal, thereby adjusting the power of the radio frequency signal output by the radio frequency resonant cavity.
2. The radio frequency signal source according to claim 1, characterized in that: The dual half-bridge circuit module includes two parallel half-bridge circuits composed of four switching tubes, the input ends of the two half-bridge circuits are respectively connected to the positive and negative poles of the DC power supply included in the dual half-bridge circuit module, and the output ends of the two half-bridge circuits are respectively connected to the positive and negative pole input ends of the RF resonant cavity.
3. The radio frequency signal source according to claim 2, characterized in that: The switch tube is a MOS tube.
4. The radio frequency signal source according to claim 3, characterized in that: The dual half-bridge circuit module includes a first MOS tube, a second MOS tube, a third MOS tube and a fourth MOS tube; The source of the first MOS tube is connected to the drain of the second MOS tube to form a first half-bridge circuit; the source of the third MOS tube is connected to the drain of the fourth MOS tube to form a second half-bridge circuit; The drain of the first MOS tube and the drain of the third MOS tube are both connected to the positive electrode of the direct current power supply DC, and the source of the second MOS tube and the source of the fourth MOS tube are both connected to the negative electrode of the direct current power supply DC; The source of the first MOS tube and the drain of the fourth MOS tube are respectively connected to the positive and negative input terminals of the radio frequency resonant cavity; The gate of the first MOS tube, the gate of the second MOS tube, the gate of the third MOS tube, and the gate of the fourth MOS tube are all connected to the power regulation module.
5. The radio frequency signal source according to claim 4, characterized in that: The power regulating module regulates the power of the radio frequency signal output by the radio frequency resonant cavity by regulating the phase of the driving signal provided to the gates of the four MOS tubes.
6. The radio frequency signal source according to claim 1, characterized in that: The DC power supply is a DC power supply without a voltage regulation function.
7. A method for adjusting the power of a radio frequency signal source according to claim 4 or 5, characterized in that: The power regulation module is used to adjust the phase shift angles of the first MOS tube and the third MOS tube, so that the dual half-bridge circuit module outputs pulse width modulation signals with different pulse widths, thereby adjusting the power of the radio frequency signal output by the radio frequency resonant cavity.
8. The method for adjusting the power of a radio frequency signal source according to claim 7, wherein: The driving waveforms of the first MOS transistor and the second MOS transistor are complementary, and the driving waveforms of the third MOS transistor and the fourth MOS transistor are complementary.
9. The method for adjusting the power of a radio frequency signal source according to claim 8, characterized in that: The adjustment range of the phase shift angles of the first MOS tube and the third MOS tube is 0 to 180 degrees.
10. The method for adjusting the power of a radio frequency signal source according to any one of claims 9, characterized in that: The larger the phase shift angles of the first MOS tube and the third MOS tube, the wider the pulse width of the pulse width modulation signal, and the greater the power of the radio frequency signal output by the radio frequency resonant cavity.