Ultraviolet sensor based on semiconductor packaging and packaging method and structure

Abstract

The invention relates to the technical field of ultraviolet sensors, in particular to an ultraviolet sensor based on semiconductor packaging, a packaging method and a packaging structure, the ultraviolet sensor based on semiconductor packaging and the packaging structure are mainly included by adopting the structure provided by the invention, and the ultraviolet sensor based on semiconductor packaging further comprises a packaging unit, each packaging unit comprises a positive electrode and a ceramic plate arranged at the bottom of the positive electrode, a metal plate is arranged below the positive electrode and the ceramic plate, a substrate is arranged below the metal plate, and micro welding wires used for being connected to external access leads are arranged at the four corners of the substrate respectively. Through the above structure, good support is provided for the two electrodes, so that the electrodes do not jump or bend due to temperature change and can bear higher vibration, and in addition, through the structure arranged in the scheme, the electrode gap can be manufactured more accurately.

Description

Technical Field

[0001] The present invention relates to the technical field of ultraviolet sensors, and in particular to an ultraviolet sensor based on semiconductor packaging and a packaging method and structure. Background Art

[0002] UV sensors are devices that can detect ultraviolet radiation and are widely used in environmental monitoring, medical treatment, agriculture and other fields. Ultraviolet rays are divided into three types: UVA, UVB and UVC. UV sensors usually rely on principles such as photoelectric effect, fluorescence effect or thermal effect to detect ultraviolet radiation. At present, common UV sensors on the market include photodiodes, photocells and photomultiplier tubes. These sensors can not only monitor the intensity of ultraviolet rays in real time, but also conduct more in-depth analysis through data processing technology.

[0003] The traditional method of manufacturing photoelectric type UV sensors requires high quartz tube operation skills. Quartz tubes are fragile and the production process is labor-intensive. Manufacturers need to make several UV sensors and then classify each sensor into different attenuation. It is difficult to make the gap distance of the electrodes consistent. It is difficult to minimize the UV sensor design due to quartz tube manufacturing. It cannot withstand high vibration. Summary of the invention

[0004] The object of the present invention is to provide an ultraviolet sensor based on semiconductor packaging and a packaging method and structure to solve the above-mentioned problems in the prior art.

[0005] The embodiments of the present invention are implemented by the following technical solutions:

[0006] A semiconductor package-based ultraviolet sensor comprises a grid electrode and a flat electrode, wherein the grid electrode and the flat electrode are connected via an insulating block, and the insulating block is used to create a gap between the grid electrode and the flat electrode;

[0007] A packaging shell is arranged outside the grid electrode and the flat electrode, and the packaging shell is used to be filled with an inert gas to fill the gap between the grid electrode and the flat electrode;

[0008] It also includes an electric power supply device, which is respectively connected to the grid electrode and an electric measuring device, and the electric measuring device is connected to the flat electrode.

[0009] In a second aspect, the present invention provides a semiconductor-based ultraviolet sensor packaging structure, including the above-mentioned semiconductor-based ultraviolet sensor, and also including a packaging unit, the packaging unit including a positive electrode and a ceramic plate arranged at the bottom of the positive electrode, a metal plate is arranged below the ceramic plate, a substrate is arranged below the metal plate, a first wire and a second wire are arranged on the substrate, the first wire is connected to the positive electrode, and the second wire is connected to the metal plate.

[0010] Preferably, a packaging shell is disposed above the base, and the packaging shell is disposed around the metal plate.

[0011] Preferably, a cover plate is further provided above the packaging shell.

[0012] Preferably, it further comprises a packaging and arranging module, wherein the packaging and arranging module comprises a carrying plate, and a plurality of packaging units are arranged on the carrying plate.

[0013] Preferably, the positive electrode is a metal grid structure.

[0014] Preferably, the ceramic plate is a hollow structure.

[0015] Preferably, the cover plate is made of transparent material.

[0016] In a third aspect, the present invention further provides a method for packaging an ultraviolet sensor based on semiconductor packaging, comprising the above-mentioned ultraviolet sensor packaging structure based on semiconductor packaging, and further comprising:

[0017] The positive electrode is used as a grid electrode of the UV sensor, the metal plate is used as a flat electrode of the UV sensor, and the ceramic plate is used as an insulating block between the grid electrode and the flat electrode;

[0018] Placing the core circuit of the UV sensor on the ceramic plate, and integrating molten metal contacts and leads on the core circuit;

[0019] Connect the positive electrode to one wire and the metal plate to another wire to form a surface mounted integrated chip UV sensor;

[0020] Place the UV sensor in the packaging shell, and place the packaging shell with the UV sensor in it into a pressure-controlled gas chamber, and seal the packaging shell with a cover plate.

[0021] The technical solution of the embodiment of the present invention has at least the following advantages and beneficial effects:

[0022] The structure provided by the present invention mainly includes a UV sensor and packaging structure based on semiconductor packaging, and also includes a packaging unit, the packaging unit includes a positive electrode and a ceramic plate arranged at the bottom of the positive electrode, a metal plate is arranged below the positive electrode and the ceramic plate, a substrate is arranged below the metal plate, and micro-welding wires for connecting to external access leads are respectively arranged at the four corners of the substrate. Through the above structure, the two electrodes are well supported, so that the electrodes will not jump or bend due to temperature changes, and can withstand higher vibrations. In addition, the structure set by this solution can make the electrode gap more accurately. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0024] Figure 1 It is a schematic diagram of the structure of the ultraviolet sensor of the present invention;

[0025] Figure 2 It is a schematic diagram of the packaging structure of the present invention;

[0026] Figure 3 It is a schematic diagram of the packaging shell of the present invention.

[0027] Icon: 1-grid electrode, 2-flat electrode, 3-insulating block, 4-packaging shell, 5-electric power supply device, 6-electric measuring device, 7-positive electrode, 8-ceramic plate, 9-first wire, 10-metal plate, 11-substrate, 12-second wire, 13-cover plate. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0029] Please refer to Figure 1-Figure 3 A semiconductor package-based ultraviolet sensor includes a grid electrode 1 and a flat electrode 2, wherein the grid electrode 1 and the flat electrode 2 are connected via an insulating block 3, and the insulating block 3 is used to create a gap between the grid electrode 1 and the flat electrode 2.

[0030] The grid electrode 1 is a hollow structure, wherein the grid structure allows light to pass through, the grid electrode 1 can be used as the positive electrode 7 of the ultraviolet sensor, and the flat electrode 2 can be used as the negative electrode of the ultraviolet sensor. The insulating block 3 is made of insulating material to form a gap distance, so that there is a gap between the grid electrode and the flat electrode 2.

[0031] A packaging shell 4 is disposed outside the grid electrode 1 and the flat electrode 2, and the packaging shell 4 is used to be filled with an inert gas to fill the gap between the grid electrode 1 and the flat electrode 2;

[0032] It also includes an electric power supply device 5 , which is respectively connected to the grid electrode 1 and an electric measuring device 6 , and the electric measuring device 6 is connected to the flat electrode 2 .

[0033] The power supply device 5 can apply a positive voltage to the grid electrode 1 and a negative voltage to the flat electrode 2. The flat electrode 2 can be made of pure nickel. The electrical measuring device 6 is used to determine whether the ultraviolet sensor is active.

[0034] When the ultraviolet sensor provided by the present invention is working, when voltage is applied to the electrode pair formed by the grid electrode 1 and the flat electrode 2, an electric field is generated, and the electric field strength is =Volt / G (unit is volt / meter). The smaller the gap, the higher the electric field strength generated.

[0035] Subjecting the gas to high electric field strengths causes the gas to bulge. By adjusting the voltage and gap distance, the gas can be brought into a pre-ionized state (electric field strength before ionization). When UV light strikes the flat electrode 2, a small amount of electrons are emitted due to the photoelectric effect. These small electron emissions trigger an avalanche effect of current (gas ionization).

[0036] The structure provided by the present invention mainly includes a UV sensor and packaging structure based on semiconductor packaging, and also includes a packaging unit, the packaging unit includes a positive electrode 7 and a ceramic plate 8 arranged at the bottom of the positive electrode 7, a metal plate 10 is arranged below the positive electrode 7 and the ceramic plate 8, a substrate 11 is arranged below the metal plate 10, and micro-welding wires for connecting to external access leads are respectively arranged at the four corners of the substrate 11. Through the above structure, the two electrodes are well supported, so that the electrodes will not jump or bend due to temperature changes, and can withstand higher vibrations. In addition, the structure set by this solution can make the electrode gap more accurately.

[0037] In the second aspect, the present invention also provides a semiconductor-based ultraviolet sensor packaging structure, including the above-mentioned semiconductor-based ultraviolet sensor, and also including a packaging unit, the packaging unit including a positive electrode 7 and a ceramic plate 8 arranged at the bottom of the positive electrode 7, a metal plate 10 is arranged below the ceramic plate 8, a substrate 11 is arranged below the metal plate 10, a first wire 9 and a second wire 12 are arranged on the substrate 11, the first wire 9 is connected to the positive electrode 7, and the second wire 12 is connected to the metal plate 10.

[0038] The positive electrode 7 is a metal grid structure, which is equivalent to the grid electrode 1 in the above-mentioned ultraviolet sensor, and the metal plate 10 is made of pure nickel, which is equivalent to the flat electrode 2 in the above-mentioned ultraviolet sensor and is the negative electrode.

[0039] The ceramic plate 8 is a hollow structure and acts as an insulating block 3 to create a gap and fill the gap in precision required to control the necessary electric field strength. A gas that uses a smaller voltage to achieve current avalanche can be selected.

[0040] At the same time, using thin hollow ceramic as the gap, it can prevent the gap distance from moving and provide good support for the two electrodes so that the electrodes will not jump or bend due to temperature changes.

[0041] The first wire 9 and the second wire 12 both function to connect the positive electrode 7 and the metal plate 10 to the outside.

[0042] In an exemplary embodiment of the present invention, a packaging shell 4 is disposed above the base 11 , and the packaging shell 4 is disposed around the metal plate 10 .

[0043] In addition, a cover plate 13 is disposed above the packaging shell 4 , and the cover plate 13 is made of a transparent material.

[0044] An exemplary embodiment of the present invention further includes a packaging column module, wherein the packaging column module includes a carrier plate, and a plurality of packaging units are arranged on the carrier plate.

[0045] In a third aspect, the present invention further provides a method for packaging an ultraviolet sensor based on semiconductor packaging, comprising the above-mentioned ultraviolet sensor packaging structure based on semiconductor packaging, and further comprising:

[0046] The positive electrode 7 is used as the grid electrode 1 of the ultraviolet sensor, the metal plate 10 is used as the flat electrode 2 of the ultraviolet sensor, and the ceramic plate 8 is used as the insulating block 3 between the grid electrode 1 and the flat electrode 2;

[0047] The core circuit of the ultraviolet sensor is placed on the ceramic plate 8, and the core circuit is integrated with molten metal contacts and leads;

[0048] Connect the positive electrode 7 to a wire, and connect the metal plate 10 to another wire to form a surface mounted integrated chip UV sensor;

[0049] The ultraviolet sensor is placed in the packaging shell 4 , and the packaging shell 4 with the ultraviolet sensor placed therein is placed as a whole in a gas chamber with pressure control, and the packaging shell 4 is sealed with a cover plate 13 .

[0050] The UV radiation will pass through the quartz window with very little loss. The quartz window will be glued to the edge of the package shell. By design, the appropriate pressure and type of gas mixture can be selected to match the designed voltage breakdown, allowing the photocurrent avalanche effect of our UV sensor.

[0051] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A UV sensor based on semiconductor packaging, characterized in that: It comprises a grid electrode (1) and a flat electrode (2), wherein the grid electrode (1) and the flat electrode (2) are connected via an insulating block (3), and the insulating block (3) is used to generate a gap between the grid electrode (1) and the flat electrode (2); A packaging shell (4) is arranged outside the grid electrode (1) and the flat electrode (2), and the packaging shell (4) is used to be filled with an inert gas to fill the gap between the grid electrode (1) and the flat electrode (2); It also comprises an electric power supply device (5), wherein the electric power supply device (5) is respectively connected to the grid electrode (1) and an electric measuring device (6), and the electric measuring device (6) is connected to the flat electrode (2).

2. A UV sensor packaging structure based on semiconductor packaging, characterized in that: A semiconductor package-based ultraviolet sensor according to claim 1, further comprising a packaging unit, wherein the packaging unit comprises a positive electrode (7) and a ceramic plate (8) arranged at the bottom of the positive electrode (7), a metal plate (10) is arranged below the ceramic plate (8), a substrate (11) is arranged below the metal plate (10), a first wire (9) and a second wire (12) are arranged on the substrate (11), the first wire (9) is connected to the positive electrode (7), and the second wire (12) is connected to the metal plate (10).

3. The ultraviolet sensor packaging structure based on semiconductor packaging according to claim 2, characterized in that: A packaging shell (4) is arranged above the base (11), and the packaging shell (4) is arranged around the metal plate (10).

4. The ultraviolet sensor packaging structure based on semiconductor packaging according to claim 3 is characterized in that: A cover plate (13) is also provided above the packaging shell (4).

5. The ultraviolet sensor packaging structure based on semiconductor packaging according to claim 3, characterized in that: It also includes a packaging and arranging module, which includes a carrying plate on which a plurality of packaging units are arranged.

6. The ultraviolet sensor packaging structure based on semiconductor packaging according to claim 3, characterized in that: The positive electrode (7) is a metal grid structure.

7. The ultraviolet sensor packaging structure based on semiconductor packaging according to claim 3, characterized in that: The ceramic plate (8) is a hollow structure.

8. The ultraviolet sensor packaging structure based on semiconductor packaging according to claim 4, characterized in that: The cover plate (13) is made of transparent material.

9. A method for packaging an ultraviolet sensor based on semiconductor packaging, characterized in that: A semiconductor package-based ultraviolet sensor packaging structure according to any one of claims 2 to 8, further comprising: The positive electrode (7) is used as a grid electrode (1) of the ultraviolet sensor, the metal plate (10) is used as a flat electrode (2) of the ultraviolet sensor, and the ceramic plate (8) is used as an insulating block (3) between the grid electrode (1) and the flat electrode (2); Placing the core circuit of the ultraviolet sensor on the ceramic plate (8), and integrating molten metal contacts and leads on the core circuit; Connecting the positive electrode (7) to a wire and connecting the metal plate (10) to another wire to form a surface mounted integrated chip UV sensor; The ultraviolet sensor is placed in a packaging shell (4), and the packaging shell (4) containing the ultraviolet sensor is placed as a whole in a gas chamber with pressure control, and the packaging shell (4) is sealed with a cover plate (13).

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