A super lens wafer, a super lens wafer manufacturing process and manufacturing equipment

Abstract

The present invention discloses a metalens wafer, a metalens wafer manufacturing process, and a manufacturing device thereof, which are used in the field of optical imaging equipment technology. The metalens wafer of the present invention includes a carrier substrate and a metalens wafer connected and fixed to the carrier substrate. The manufacturing process of the present invention includes the following steps: using reactive ions to etch preset exposed positions of the metalens wafer to form grooves in a target oxide layer of the metalens wafer, wherein the grooves penetrate the target oxide layer along a preset direction; cutting along the grooves toward the carrier substrate until the carrier substrate is cut through. Since the target oxide layer is divided by etching, the problems of edge collapse and in-plane cracks caused by mechanical cutting of the target oxide layer can be effectively avoided, thereby effectively improving the product yield of the metalens wafer.

Description

Technical Field

[0001] This invention relates to the field of optical imaging equipment technology, and in particular to a super lens wafer, a super lens wafer manufacturing process, and manufacturing equipment. Background Technology

[0002] The optical lens systems used in existing optical imaging systems are generally traditional lens groups. These lenses mainly use high-refractive-index media materials, such as glass and quartz. Due to the inherent phase accumulation modulation mechanism and material properties of the medium, traditional lenses are relatively large in size and weight. Furthermore, spherical aberration exists due to the manufacturing process, requiring lens groups to eliminate it. This makes it difficult to further reduce the size of the lens group. In contrast, metasurface-based superlenses can locally change the amplitude, phase, and polarization characteristics of the incident beam through subwavelength microstructure arrays arranged on a two-dimensional plane, avoiding the spherical aberration produced by traditional lenses. They have advantages such as small size and light weight. Since the fabrication process of superlenses is compatible with CMOS technology, silicon is generally used to fabricate the subwavelength structure array, with silicon dioxide as the substrate material.

[0003] After the superlens wafer is fabricated, the metasurface is usually transferred to the carrier glass by adhesive bonding. Subsequently, it is mechanically cut into superlenses of a predetermined size. However, due to the brittleness of the oxide layer material of the superlens wafer, such as the silicon oxide layer, edge chipping and in-plane cracks are prone to occur during mechanical cutting, which seriously reduces the product yield. Summary of the Invention

[0004] This invention provides a super lens wafer, a super lens wafer manufacturing process, and manufacturing equipment, aiming to solve the problems of edge chipping and in-plane cracks caused by the high brittleness of the oxide layer in the super lens wafer process.

[0005] The first aspect of this invention provides a superlens wafer manufacturing process, the superlens wafer comprising a carrier substrate and a superlens wafer connected and fixed to the carrier substrate, characterized by comprising the following steps:

[0006] The preset exposure position of the superlens wafer is etched using reactive ions to form a groove on the target oxide layer of the superlens wafer, wherein the groove penetrates the target oxide layer along a preset direction;

[0007] Cut along the groove toward the bearing substrate until the bearing substrate is cut through.

[0008] In some embodiments of the first aspect, the target oxide layer is a silicon oxide layer; the step of etching a predetermined exposed position on the superlens wafer using reactive ions to form a trench on the target oxide layer of the superlens wafer specifically includes:

[0009] The preset exposure positions of the superlens wafer are etched using fluorocarbon ions to form grooves on the silicon oxide layer of the superlens wafer.

[0010] In some embodiments of the first aspect, the superlens wafer includes a target oxide layer and a substrate layer stacked together; the support substrate is connected and fixed to the target oxide layer, and the substrate layer and the support substrate are respectively located on opposite sides of the target oxide layer.

[0011] In some embodiments of the first aspect, before etching the preset exposure position of the superlens wafer using reactive ions, the superlens wafer is first fixed to the carrier substrate with bonding adhesive.

[0012] In some embodiments of the first aspect, the step of etching a predetermined exposed location on the superlens wafer using reactive ions to form a trench on the target oxide layer of the superlens wafer specifically includes:

[0013] The preset exposure position is formed on the substrate layer, and the preset exposure position of the substrate layer is etched so that the groove extends from the substrate layer to the target oxide layer.

[0014] In some embodiments of the first aspect, the step further includes forming the predetermined exposure location on the substrate layer before the following steps are performed:

[0015] The substrate layer is thinned.

[0016] In some embodiments of the first aspect, the superlens wafer and the carrier substrate are fixed with bonding adhesive only after the step of etching the preset exposure position of the superlens wafer using reactive ions.

[0017] In some embodiments of the first aspect, the step of etching a predetermined exposed location on the superlens wafer using reactive ions to form a trench on the target oxide layer of the superlens wafer specifically includes:

[0018] The preset exposure position is formed on the target oxide layer, and the preset exposure position of the target oxide layer is etched to form the groove on the target oxide layer.

[0019] In some embodiments of the first aspect, the method further includes the following steps after the slot is formed and the superlens wafer and the carrier substrate are bonded together, and before cutting the carrier substrate along the slot:

[0020] Remove the base layer.

[0021] In some embodiments of the first aspect, the method for forming the preset exposure location specifically includes:

[0022] A photoresist layer is formed by coating the surface of the superlens wafer, and the photoresist layer is subjected to photolithography to expose the surface of the superlens wafer to form the preset exposure position.

[0023] A second aspect of the present invention provides a super-lens wafer manufacturing apparatus, which applies the super-lens wafer manufacturing process described in the first aspect, comprising:

[0024] A bonding mechanism is used to bond and fix the superlens wafer to the carrier substrate;

[0025] An etching mechanism is used to etch a preset exposure position on the superlens wafer using reactive ions to form a groove on the target oxide layer of the superlens wafer.

[0026] A cutting mechanism is used to cut the bearing substrate along the slot until the bearing substrate is cut through;

[0027] A computer terminal is used to acquire material information of the super lens wafer and control the etching parameters of the etching mechanism and the working parameters of the cutting mechanism according to the material information, so as to process the super lens wafer.

[0028] A third aspect of the present invention provides a super lens wafer, fabricated by the super lens wafer manufacturing process described in the first aspect, comprising: the super lens wafer and the carrier substrate;

[0029] The superlens wafer includes a silicon oxide thin film made using a thermal oxidation process and an outermost silicon oxide layer made using a plasma-enhanced chemical vapor deposition process. The outermost silicon oxide layer made using the plasma-enhanced chemical vapor deposition process is bonded and fixed to the carrier substrate by bonding adhesive.

[0030] As can be seen from the above technical solutions, the present invention has the following advantages:

[0031] In a first aspect, embodiments of the present invention provide a super lens wafer manufacturing process. By using reactive ions to etch a preset exposure position on the super lens wafer, a groove is formed on the target oxide layer of the super lens wafer. The groove penetrates the upper and lower surfaces of the target oxide layer. Then, the substrate is cut along the groove until it penetrates the substrate, thus completing the cutting of the entire super lens wafer. Since the target oxide layer is divided by etching, the problems of edge chipping and in-plane cracks that occur when mechanically cutting the target oxide layer can be effectively avoided, thereby effectively improving the product yield of the super lens wafer.

[0032] In a second aspect, embodiments of the present invention provide a super lens wafer manufacturing apparatus. Because it is equipped with a computer terminal, the computer terminal can identify the material information of the super lens wafer, determine the etching parameters and dicing parameters based on the material information, and then control the bonding mechanism, etching mechanism and dicing mechanism to execute the above-mentioned super lens wafer manufacturing process. It can adapt to different super lens wafer materials, realize the etching and dicing of the target oxide layer, and avoid edge chipping and in-plane cracking problems caused by mechanical cutting of the target oxide layer.

[0033] In a third aspect, embodiments of the present invention provide a super lens wafer manufactured by performing a super lens wafer manufacturing process using the aforementioned equipment. The super lens wafer does not exhibit edge chipping or in-plane cracking issues on the target oxide layer, resulting in better performance. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the process steps for manufacturing a super lens wafer according to Embodiment 1 of the present invention;

[0036] Figure 2 This is a schematic diagram of a super lens wafer manufacturing process provided in Embodiment 1 of the present invention;

[0037] Figure 3 This is a schematic diagram of the process steps for manufacturing a super lens wafer according to Embodiment 2 of the present invention;

[0038] Figure 4 This is a schematic diagram of a super lens wafer manufacturing process provided in Embodiment 2 of the present invention;

[0039] Figure 5 This is a schematic diagram of a super lens wafer structure provided in Embodiment 1 of the present invention.

[0040] Figure label:

[0041] 1. Superlens wafer; 10. Support substrate; 11. Superlens wafer; 110. Target oxide layer; 1100. Outermost silicon oxide layer; 1101. Silicon oxide thin film; 111. Substrate layer; 112. Bonding adhesive layer; 113. Photoresist layer; 114. Patterned groove; 115. Groove. Detailed Implementation

[0042] This invention provides a super lens wafer 1, a super lens wafer process and manufacturing equipment, aiming to solve the problems of edge chipping and in-plane cracks caused by the high brittleness of the oxide layer in the super lens wafer 11 process.

[0043] To make the objectives, features, and advantages of this invention more apparent and understandable, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0044] See also Figures 1 to 5 One embodiment of the present invention provides a manufacturing process for a super lens wafer, wherein the super lens wafer 1 includes a carrier substrate 10 and a super lens wafer 11 connected and fixed on the carrier substrate 10, and the manufacturing process includes the following steps:

[0045] The preset exposure position of the superlens wafer 11 is etched by reactive ions to form a groove 115 on the target oxide layer 110 of the superlens wafer 11, wherein the groove 115 penetrates the target oxide layer 110 along a preset direction.

[0046] Cut along the slot 115 toward the bearing substrate 10 until the bearing substrate 10 is cut through.

[0047] In this embodiment, reactive ions are used to etch the preset exposure positions of the superlens wafer 11 to form a groove 115 on the target oxide layer 110 of the superlens wafer 11. Since the target oxide layer 110 is selectively divided by etching, the chipping and in-plane cracking problems that occur when mechanically cutting the target oxide layer 110 can be effectively avoided. Subsequently, the support substrate 10 is cut along the groove 115 until it is cut through the support substrate 10, thus completing the cutting of the entire superlens wafer 1. Therefore, the solution provided in this embodiment can effectively reduce the chipping and in-plane cracking problems of the target oxide layer 110 of the superlens wafer 11 during the cutting process, and effectively improve the product yield of the superlens wafer 1.

[0048] The preset exposure position of the lens wafer 11 can be formed by forming an exposure pattern on the super lens wafer 11 using a photoresist process, and the exposed position of the super lens wafer 11 is the preset exposure position.

[0049] In addition, the preset direction of the groove 115 can be the up and down direction, or other required groove directions. As long as the direction of penetrating the target oxide layer 110 is met, those skilled in the art can make the selection.

[0050] Based on the above examples, the technical solution provided in this embodiment includes at least two steps: first, the brittle target oxide layer 110 of the super lens wafer 11 is processed by etching, and then the support substrate 10 is cut along the groove 115 using a suitable cutting method until the support substrate 10 is cut through. This avoids the problem of easy edge chipping and in-plane cracks in the entire super lens wafer 1 during mechanical cutting due to the brittleness of the target oxide layer 110, and effectively improves the product yield of the super lens wafer 1.

[0051] Example 1

[0052] See Figures 1 to 2 In Embodiment 1 of the present invention, when manufacturing the super-lens wafer 1 using the above-described super-lens wafer process, the specific steps include:

[0053] S1 provides super lens wafer 1, such as Figure 2 (a) to Figure 2 As shown in (c), the super lens wafer 1 includes a carrier substrate 10 and a super lens wafer 11, and the super lens wafer 11 is connected and fixed to the carrier substrate 10.

[0054] like Figure 2 As shown in (a), the superlens wafer 11 includes a target oxide layer 110 and a substrate layer 111 stacked together. The target oxide layer 110 is a silicon oxide layer or a titanium oxide layer, and the substrate layer 111 is a silicon substrate layer. The carrier substrate 10 is a carrier glass. The carrier substrate 10 is connected and fixed to the target oxide layer 110. After fixing, the carrier substrate 10 and the substrate layer 111 are located on both sides of the target oxide layer 110 to form an integral stack for subsequent etching and cutting. Then, the fixed stack is fixed on the worktable and subsequent process steps are performed.

[0055] Specifically, the superlens wafer 11 is connected to the carrier substrate 10 by bonding, that is, the carrier substrate 10 and the target oxide layer 110 are connected and fixed by vacuum adhesive bonding technology. During the connection and fixing process, as follows... Figure 2As shown in (b), a bonding adhesive / laminated bonding adhesive dry film is first coated on the target oxide layer 110 of the superlens wafer 11. Then, the carrier substrate 10 is aligned and placed on the target oxide layer 110 of the superlens wafer 11. A vacuum is then drawn, and the wafer is hot-pressed in a vacuum environment to promote the flow and bonding of the adhesive, thereby achieving bonding and fixation between the superlens wafer 11 and the carrier substrate 10. The fixed superlens wafer 11 and carrier substrate 10 are as follows: Figure 2 As shown in (c).

[0056] It should be understood that the bonding adhesive layer 112 used is made of a high light transmittance material, which needs to meet the requirement of light transmittance > 99.6%.

[0057] In order to avoid the influence of surface contaminants on the cutting and separation process of the super lens wafer 1, the surface of the super lens wafer 11 needs to be cleaned before step S1. After the super lens wafer 11 is cleaned and connected to the substrate 10, the separation position can be avoided due to contaminants, and the cracks caused by surface contaminants can be avoided, thereby improving the yield of the super lens wafer 1.

[0058] It should be noted that the specific cleaning methods include, but are not limited to, cleaning with cleaning fluid or cleaning with gas, and those skilled in the art can choose according to actual needs.

[0059] S2, using reactive ions to etch the preset exposure position of the superlens wafer 11, selectively forming a groove 115 on the target oxide layer 110 of the superlens wafer 11, wherein the groove 115 penetrates the target oxide layer from top to bottom, that is, the groove 115 divides the target oxide layer 110 into multiple isolated units.

[0060] For specific implementation, please refer to Figure 2 (d) to Figure 2 (h) Step S2 specifically includes the following steps:

[0061] S20, such as Figure 2 (e) A preset exposure position is formed on the substrate 111. Specifically, a photoresist layer 113 is formed by coating a photoresist layer on the surface of the substrate 111. Then, a patterned groove 114 is made on the photoresist layer 113 using a photolithography process. The patterned groove 114 exposes the surface of the substrate 111. The exposed position is the preset exposure position of the substrate 111. During subsequent etching, the etching material can etch the exposed preset exposure position.

[0062] To reduce the problem of subsequent internal stress not being released in a timely manner, before forming the preset exposure position on the substrate 111 in step S20, the following steps are also included: Figure 2(d) Flip the entire stack so that the base layer 111 is on top and the supporting base 10 is below. Then, the base layer 111 is thinned. The thinned base layer 111 can avoid stress and reduce the problem that the internal stress cannot be released in time. At the same time, it can save etching material.

[0063] Specifically, the substrate 111 is thinned to 10~50μm. The specific thinning methods include, but are not limited to, mechanical grinding or chemical dissolution. Any thinning method that can reduce the substrate 111 to 10~50μm can be selected by those skilled in the art according to actual needs.

[0064] S21, as Figure 2 (f) and Figure 2 As shown in (g), reactive ions are used to etch the preset exposure positions of the superlens wafer 11. That is, the reactive ions react at the exposed preset exposure positions to achieve the etching of the trench 115. The trench 115 will sequentially penetrate the substrate layer 111 and the target oxide layer 110. The process can be found in [reference]. Figure 2 (f) to Figure 2 (g) to extend the groove 115 from the substrate 111 to the target oxide layer 110.

[0065] In one specific embodiment, the target oxide layer 110 is a silicon oxide layer. More specifically, the silicon oxide layer includes a silicon oxide thin film 1101 made using a thermal oxidation process and an outermost silicon oxide layer 1100 made using a plasma-enhanced chemical vapor deposition process. The silicon oxide layers made using the thermal oxidation process and the PECVD process are very brittle, and direct mechanical cutting is prone to edge chipping and in-plane cracking. To solve this problem, fluorocarbon ions are used to etch the preset exposure positions of the superlens wafer 11. During the plasma etching process, the fluorocarbon ions can be ionized to generate active fluorine atoms. These fluorine atoms can react with the silicon oxide layer to generate gaseous silicon fluoride (SiF4) and other products, thereby achieving etching so that the outermost silicon oxide layer 1100 and the silicon oxide thin film 1101 of the superlens wafer 11 form a groove, that is, a groove 115 is formed in the silicon oxide layer, thereby dividing the silicon oxide layer into isolated units.

[0066] In other embodiments, the target oxide layer 110 is a titanium oxide layer. Fluorocarbon ions are used to etch the preset exposure positions of the superlens wafer 11. During the plasma etching process, the fluorocarbon ions can be ionized to generate volatile titanium fluorides, such as TiF4, thereby achieving etching so that the titanium oxide layer of the superlens wafer 11 forms a groove 115, thereby dividing the titanium oxide layer into isolated units.

[0067] It should be noted that the specific types of gases containing fluorinated carbon ions include: carbon tetrafluoride (CF4), octafluoropropane (CH3CH2CH2F8), trifluoromethane (CHF3), etc., among which CF4 and CHF3 are commonly used. CF4 has a high etching rate but poor selectivity for polycrystalline silicon, while CHF3 has a higher polymer production rate. Fluorinated carbon ions in the non-plasma state have high chemical stability, and their chemical bonds are stronger than those of SiF, so they will not react with silicon or silicon oxides. Generally, the higher the proportion of carbon atoms in the fluorinated carbon ion gas, the more polymers are formed, resulting in a high etching selectivity, but also a lower etching rate. Therefore, in some etching systems, the fluorine atom ratio is changed by adding silicon sources (silicon tetrafluoride) to increase fluorine atoms.

[0068] S22, as Figure 2 As shown in (g), the remaining photoresist layer 113 is removed using a wet process, that is, the chip is immersed in a specific chemical liquid to soften and remove the photoresist, and finally the photoresist is peeled off from the wafer surface. The types of chemical liquids include, but are not limited to, acetone, cyclopentanone and positive resist remover. The specific type and amount can be selected according to the type, thickness and actual application requirements of the photoresist.

[0069] As can be seen from the embodiments of step S2 above, the target oxide layer 110 in one embodiment is a silicon oxide layer, and the target oxide layer 110 in another embodiment is a titanium oxide layer. Both are common target oxide layers 110 in superlens wafers 11. After adopting this method, the target oxide layer 110 can be divided into multiple layers by etching, avoiding the situation that the target oxide layer 110 is brittle and prone to chipping and internal cracks when mechanically cut.

[0070] S3, as Figure 2 (i) Cut along the slot 115 toward the bearing substrate 10 until the bearing substrate 10 is cut through to obtain multiple super lenses of preset size. After step S3, the structure except the target oxide layer 110 can be cut and separated. The target oxide layer 110, which is prone to edge chipping and in-plane cracking, is avoided during the mechanical cutting process.

[0071] It should be noted that mechanical cutting methods include, but are not limited to, blade cutting or laser cutting. When using blade cutting, a soft blade is needed to cut the remaining bonding adhesive and glass. The size of the soft blade is determined by the etching opening and the cutting offset. When using laser cutting, laser cutting includes stealth cutting or laser ablation. The appropriate laser spot size needs to be selected according to the etching opening, and the appropriate laser pulse and laser parameters need to be selected according to the thickness of the bonding adhesive and glass.

[0072] To improve the stability and effectiveness of the cutting, the following steps are included before cutting: removing the base layer 111, such as... Figure 2 (h) Since the superlens wafer 11 includes the target oxide layer 110 and the substrate layer 111, the substrate layer 111 has been initially thinned during the etching process. Then, the entire substrate layer 111 is removed to expose the superlens wafer 11 and the support substrate 10. Since the superlens wafer 11 has been etched and separated, subsequent cutting only requires cutting the support substrate 10 separately, avoiding the simultaneous cutting of multiple materials with different hardness. This can effectively prevent the occurrence of edge chipping and cracks, improve the stability and effect of cutting, thereby improving the quality of the product and greatly increasing the yield of the product.

[0073] It should be noted that the methods for removing the substrate 111 include, but are not limited to, mechanical methods such as grinding, or chemical dissolution and thinning. Those skilled in the art can choose according to their actual needs.

[0074] As can be seen from the above embodiment 1, the super lens wafer process proposed in embodiment 1 first connects and fixes the super lens wafer 11 to the carrier substrate 10, and then etches the preset exposed position of the super lens wafer 11 to form a groove 115 on the silicon oxide layer of the super lens wafer 11. Then, it cuts along the groove 115 towards the carrier substrate 10 until it cuts through the carrier substrate 10. In this invention, when cutting the silicon oxide layer, the etching method is used instead of the cutting method, which avoids the problem of edge chipping and in-plane cracks that are easy to occur during mechanical cutting due to the high brittleness of silicon oxide.

[0075] In other embodiments, the super lens wafer process proposed in this invention can also be used for dicing the target oxide layer 110 of other structures. The target oxide layer 110 can be a titanium oxide layer. Grooves 115 are formed on the titanium oxide layer by etching, and then it is diced. This can also realize a super lens wafer. Correspondingly, it avoids the problem of edge chipping and in-plane cracks caused by the high brittleness of titanium oxide during mechanical dicing.

[0076] Based on the above-mentioned super lens wafer process, the present invention also proposes a super lens wafer apparatus for fabricating super lens wafer 1.

[0077] This invention provides a super lens wafer device, comprising:

[0078] A bonding mechanism is used to bond and fix the superlens wafer 11 to the carrier substrate 10;

[0079] An etching mechanism is used to etch a preset exposure position on the superlens wafer 11 so as to form a groove 115 on the target oxide layer 110 of the superlens wafer 11.

[0080] A cutting mechanism is used to cut the bearing substrate 10 along the slot 115 until the bearing substrate 10 is cut through.

[0081] A computer terminal is used to acquire material information of the super lens wafer 1 and control the etching parameters of the etching mechanism and the working parameters of the cutting mechanism according to the material information in order to process the super lens wafer.

[0082] The aforementioned bonding, etching, and dicing mechanisms are all controlled by a computer terminal. The computer terminal can determine the corresponding bonding path, etching parameters, and dicing parameters based on the different materials. Then, based on the material information, the computer terminal determines the type and parameters of dicing and controls the bonding, etching, and dicing mechanisms to execute the above process steps, thereby realizing the intelligentization and automation of the super lens wafer process.

[0083] When faced with different super lens wafers, the computer terminal first determines the type of the target oxide layer 110, such as whether it is a silicon oxide layer or a titanium oxide layer, and determines the materials and parameters required for etching; then the computer terminal determines the type of the carrier substrate, the parameters of mechanical cutting, as well as the bonding path and bonding size parameters. Subsequently, the computer terminal controls the bonding mechanism, etching mechanism and cutting mechanism to execute the above process steps in sequence to complete the cutting of different super lens wafers.

[0084] Based on the above-described super lens wafer process and manufacturing equipment, the present invention also proposes a super lens wafer 1, which is prepared by the above-described super lens wafer process.

[0085] Please refer to Figure 5 The present invention provides a super lens wafer 1, comprising: a super lens wafer 11 and a support substrate 10;

[0086] The superlens wafer includes a silicon oxide thin film 1101 made using a thermal oxidation process, and an outermost silicon oxide layer 1100 made using a plasma-enhanced chemical vapor deposition process. The outermost silicon oxide layer 1100 made using the plasma-enhanced chemical vapor deposition process is bonded and fixed to the carrier substrate 10 by bonding adhesive.

[0087] After being fabricated using the above-mentioned super lens wafer process, the cut surface of the super lens wafer 1 is neat, and in particular, there are no chipping or in-plane cracks on the target oxide layer 110 (silicon oxide layer or titanium oxide layer), resulting in better performance.

[0088] Example 2

[0089] See Figures 3 and 4In Embodiment 2 of the present invention, the super lens wafer 1 is manufactured using the above-described super lens wafer process. Its basic principle is basically the same as that of Embodiment 1. Both involve first etching a through groove 115 on the target oxide layer 110, and then cutting along the groove 115 toward the support substrate 10 until the support substrate 10 is cut through. The difference is that the order in which the support substrate 10 and the super lens wafer 11 are connected and fixed is different. In Embodiment 1, the support substrate 10 and the super lens wafer 11 are fixed first and then etched and cut. In Embodiment 2, the etching is performed first, then the support substrate 10 and the super lens wafer 11 are fixed, and finally the etching is performed.

[0090] Example 2 specifically includes the following steps:

[0091] S1, as Figure 4 (a) A superlens wafer 1 is provided, which includes a carrier substrate 10 and a superlens wafer 11. That is, in this embodiment, the carrier substrate 10 and the superlens wafer 11 are not yet connected and fixed, so only... Figure 4 (a) shows the superlens wafer 11.

[0092] S2, as Figure 4 (b) to Figure 4 As shown in (d), reactive ions are used to etch the preset exposure position of the superlens wafer 11 so that a groove 115 is formed on the target oxide layer 110 of the superlens wafer 11, wherein the groove 115 penetrates the upper surface and the lower surface of the target oxide layer 110.

[0093] Preferably, step S2 specifically includes the following steps:

[0094] S20, such as Figure 4 (b) A preset exposure position is formed on the target oxide layer 110. Specifically, a photoresist layer 113 is coated on the surface of the target oxide layer 110, and then a patterned groove 114 is made using a photolithography process. The patterned groove 114 exposes the surface of the target oxide layer 110. The exposed position is the preset exposure position of the target oxide layer 110. It can be seen that the difference between Embodiment 2 and Embodiment 1 is that the location where the preset exposure position is formed has changed from the substrate layer 111 in Embodiment 1 to the target oxide layer 110. At the same time, no additional thinning treatment of the oxide layer is required, and the number of processes is reduced.

[0095] S21, as Figure 4 (c) The preset exposure position of the superlens wafer 11 is etched by reactive ions. That is, the reactive ions react at the preset exposure position to achieve etching of the groove 115 until the groove 115 penetrates the target oxide layer 110. It can be seen that the groove 115 in Example 2 does not need to extend to the substrate layer 111, and less etching material is used.

[0096] S22, as Figure 4 (d) Remove the remaining photoresist using a wet process, i.e., immerse the chip in a specific chemical liquid to soften and remove the photoresist, and finally peel the photoresist off the wafer surface. The types of chemical liquids include, but are not limited to, acetone, cyclopentanone and positive photoresist remover. The specific type and amount can be selected according to the type and thickness of the photoresist and the actual application requirements.

[0097] S3, as Figure 4 (e) and Figure 4 (f) The superlens wafer 11 is connected and fixed to the carrier substrate 10. Specifically, the superlens wafer 11 and the carrier substrate 10 are fixed by bonding in the same way as in Embodiment 1, and will not be described in detail here.

[0098] S4, Figure 4 (h) Cut along the slot 115 toward the bearing substrate 10 until the bearing substrate 10 is cut through to obtain multiple super lenses of preset size. Specifically, the cutting method is the same as in Embodiment 1, and will not be described in detail here.

[0099] To improve the stability and effectiveness of the cutting, the following steps are included before cutting: removing the base layer 111, such as... Figure 4 (g) Specifically, the removal method and effect are the same as in Example 1, and will not be described in detail here.

[0100] As can be seen from the above Embodiment 2, the super lens wafer process proposed in Embodiment 2 uses reactive ions to first etch the preset exposure position of the super lens wafer 11 to form a groove 115 on the target oxide layer 110 of the super lens wafer 11. Then, the super lens wafer 11 is connected and fixed to the support substrate 10. Finally, it is cut along the groove 115 towards the support substrate 10 until it cuts through the support substrate 10. In this invention, when cutting the target oxide layer 110, the etching method is used instead of the cutting method, which avoids the problem of edge chipping and in-plane cracks that are easy to occur during mechanical cutting due to the high brittleness of the target oxide layer 110.

[0101] Therefore, the biggest difference between Embodiment 2 and Embodiment 1 is that the order of bonding and etching is different. Embodiment 1 involves bonding and etching first. Since each step of the super lens wafer 1 dicing is performed after bonding, the super lens wafer 1 has better integrity. Embodiment 2 involves etching first and then bonding and fixing. Since the super lens wafer 11 is processed first, any defective products can be removed, which is more flexible. Compared with Embodiment 1, it reduces the thinning process and etching materials, resulting in lower costs. At the same time, it eliminates the technical bias of bonding and fixing first and then dicing.

[0102] Both methods involve first forming a groove 115 on the target oxide layer 110 of the superlens wafer 11, and then cutting along the groove 115 towards the support substrate 10 until the support substrate 10 is cut through. Accordingly, both Embodiment 1 and Embodiment 2 can solve the problem of high brittleness of oxide layer material and the occurrence of edge chipping and in-plane cracks during mechanical cutting.

[0103] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A process for manufacturing a superlens wafer, the superlens wafer comprising a carrier substrate and a superlens wafer connected and fixed to the carrier substrate, characterized in that, The superlens wafer includes a target oxide layer and a substrate layer stacked together; the supporting substrate is connected and fixed to the target oxide layer, and the substrate layer and the supporting substrate are respectively located on two side surfaces of the target oxide layer; Includes the following steps: A predetermined exposure location is formed on the substrate layer or on the target oxide layer; The preset exposure position of the superlens wafer is etched using reactive ions to form a groove on the target oxide layer of the superlens wafer, wherein the groove penetrates the target oxide layer along a preset direction; Cut along the groove toward the bearing substrate until the bearing substrate is cut through.

2. The super-lens wafer manufacturing process according to claim 1, characterized in that, The target oxide layer is a silicon oxide layer; the step of etching a predetermined exposed position on the superlens wafer using reactive ions to form a groove on the target oxide layer of the superlens wafer specifically involves: The preset exposure positions of the superlens wafer are etched using fluorocarbon ions to form grooves on the silicon oxide layer of the superlens wafer.

3. The super-lens wafer manufacturing process according to claim 1, characterized in that, Before etching the preset exposure positions of the superlens wafer using reactive ions, the superlens wafer is first fixed to the carrier substrate with bonding adhesive.

4. The super-lens wafer manufacturing process according to claim 3, characterized in that, The step of etching predetermined exposed locations on the superlens wafer using reactive ions to form trenches on the target oxide layer of the superlens wafer specifically involves: The preset exposure location of the substrate is etched so that the groove extends from the substrate to the target oxide layer.

5. The super-lens wafer manufacturing process according to claim 4, characterized in that, Before forming the predetermined exposure location on the substrate layer, the following steps are also included: The substrate layer is thinned.

6. The super-lens wafer manufacturing process according to claim 1, characterized in that, After etching the preset exposure positions of the superlens wafer using reactive ions, the superlens wafer and the carrier substrate are fixed together with bonding adhesive.

7. The super-lens wafer manufacturing process according to claim 6, characterized in that, The step of etching a predetermined exposed location on the superlens wafer using reactive ions to form a trench on the target oxide layer of the superlens wafer specifically involves: The target oxide layer is etched at a predetermined exposure location to form the groove on the target oxide layer.

8. A super-lens wafer manufacturing process according to any one of claims 4 or 7, characterized in that, After the slot is formed and the superlens wafer and the carrier substrate are bonded and fixed, and before the carrier substrate is cut along the slot, the following steps are included: Remove the base layer.

9. The super-lens wafer manufacturing process according to claim 1, characterized in that, The method for forming the preset exposure location is as follows: A photoresist layer is formed by coating the surface of the superlens wafer, and the photoresist layer is subjected to photolithography to expose the surface of the superlens wafer to form the preset exposure position.

10. A super lens wafer manufacturing apparatus, characterized in that, The super lens wafer manufacturing process described in any one of claims 1 to 9 is applied, comprising: A bonding mechanism is used to bond and fix the superlens wafer to the carrier substrate; An etching mechanism is used to etch a preset exposure position on the superlens wafer using reactive ions to form a groove on the target oxide layer of the superlens wafer. A cutting mechanism is used to cut the bearing substrate along the slot until the bearing substrate is cut through; A computer terminal is used to acquire material information of the super lens wafer and control the etching parameters of the etching mechanism and the working parameters of the cutting mechanism according to the material information, so as to process the super lens wafer.

11. A super-lens wafer, characterized in that, The super lens wafer is fabricated using the super lens wafer manufacturing process according to any one of claims 1 to 9, comprising: a super lens wafer and a carrier substrate; The superlens wafer includes a silicon oxide thin film made using a thermal oxidation process and an outermost silicon oxide layer made using a plasma-enhanced chemical vapor deposition process. The outermost silicon oxide layer made using the plasma-enhanced chemical vapor deposition process is bonded and fixed to the carrier substrate by bonding adhesive.

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