Semiconductor device, method of fabricating the same, and semiconductor apparatus

Abstract

Embodiments of the present disclosure relate to a semiconductor device, a preparation method thereof and a semiconductor device. The preparation method comprises: placing a substrate on a carrier table of a deposition chamber to form an initial material layer on a surface of the substrate; the carrier table is provided with a plurality of adsorption holes, the carrier table is used for carrying and transmitting heat to the substrate, the initial material layer comprises an abnormal region, and a projection of the adsorption hole on the substrate is located in the abnormal region; confirming parameter information corresponding to the initial material layer of the abnormal region, the parameter information being used for characterizing a thickness of the initial material layer; and adjusting a first grinding parameter of chemical mechanical grinding on the initial material layer of the abnormal region according to the parameter information. Defects caused by the film thickness of the initial material layer of the abnormal region are avoided, and the product yield of the semiconductor device is improved.

Description

TECHNICAL FIELD

[0001] The embodiment of the present disclosure relates to the technical field of semiconductor technology, in particular to a semiconductor device, a preparation method thereof and a semiconductor equipment. BACKGROUND

[0002] The shallow trench isolation high aspect ratio process (STI HARP) is mainly applied to the filling of the STI trench, including: a first step of forming a silicon dioxide film layer on a substrate with a trench, the silicon dioxide film layer filling the trench and extending to a silicon nitride layer of an active region; a second step of removing the excess silicon dioxide film layer on the surface of the substrate by chemical mechanical grinding, and retaining the silicon dioxide film layer in the trench as a shallow trench isolation structure to realize the insulation of the device.

[0003] When the local thickness of the silicon dioxide film layer is uneven, there will be silicon dioxide residues on the silicon nitride film layer after chemical mechanical grinding, which affects the removal of the subsequent silicon nitride film layer, forms silicon nitride residues, and reduces the product yield. How to avoid the residues of silicon dioxide has become a problem that needs to be solved urgently. SUMMARY

[0004] The embodiment of the present disclosure provides a semiconductor device, a preparation method thereof and a semiconductor equipment, which can reduce the influence of film thickness difference on product yield.

[0005] A preparation method of a semiconductor device, comprising:

[0006] placing a substrate on a bearing table of a deposition chamber, and forming an initial material layer on the surface of the substrate; the bearing table is provided with a plurality of adsorption holes, and the bearing table is used for bearing and transmitting heat to the substrate;

[0007] forming an initial material layer on the surface of the substrate, the initial material layer comprising an abnormal region, and the normal projection of the adsorption hole on the substrate is located in the abnormal region;

[0008] confirming parameter information corresponding to the initial material layer of the abnormal region, the parameter information being used for characterizing the thickness of the initial material layer;

[0009] adjusting a first grinding parameter of chemical mechanical grinding of the initial material layer of the abnormal region according to the parameter information.

[0010] In one of the embodiments, the initial material layer comprises a first test region surrounding the center of the substrate, and the abnormal region is located in the first test region. The confirming of the parameter information corresponding to the initial material layer of the abnormal region comprises:

[0011] a plurality of first measurement points are selected in the first test area; a distance between the first measurement points and the center of the circle is equal to a preset value, the plurality of first measurement points are uniformly arranged along a circumferential direction of the first test area, and the preset value is a distance between a center point of a normal projection of the adsorption hole on the substrate and the center of the circle;

[0012] a first intermediate thickness of the initial material layer corresponding to each first measurement point is measured;

[0013] a first thickness of the initial material layer is obtained according to the first intermediate thickness corresponding to each first measurement point, and the first thickness is taken as the parameter information.

[0014] In one of the embodiments, a distance between a normal projection of at least one of the first measurement points on the carrier table and an adjacent adsorption hole is less than or equal to a preset distance, and the preset distance is a maximum distance between the normal projection of the adsorption hole on the substrate and an edge of the abnormal area.

[0015] In one of the embodiments, the initial material layer further includes a plurality of second test areas surrounding the center of the circle, and the first test area is adjacent to at least one of the second test areas; and the method further includes:

[0016] a second thickness of the initial material layer of each second test area is confirmed;

[0017] a second grinding parameter for chemical mechanical grinding of the initial material layer of each second test area is adjusted according to the second thickness of each second test area;

[0018] In the above method, the plurality of second test areas are arranged along a radius of the substrate, and a number of second measurement points corresponding to a second test area close to the center of the circle is less than a number of second measurement points corresponding to a second test area far from the center of the circle.

[0019] In one of the embodiments, the step of confirming the parameter information corresponding to the initial material layer of the abnormal area includes:

[0020] In the step of depositing to form the initial material layer, a first pressure of a vacuum pipeline connected with the adsorption hole is measured, and the first pressure is taken as the parameter information.

[0021] In one of the embodiments, the method further includes:

[0022] a pressure of a vacuum pipeline connected with the adsorption hole is adjusted according to the parameter information.

[0023] A semiconductor device includes:

[0024] A deposition chamber, wherein a plurality of supporting tables are arranged in the deposition chamber, a plurality of adsorption holes are arranged on the supporting tables, the supporting tables are used for supporting and transferring heat to a substrate, the deposition chamber is used for forming an initial material layer, the initial material layer comprises an abnormal area, and a projection of the adsorption hole on the substrate is located in the abnormal area;

[0025] A vacuum pipeline corresponding to the supporting table and communicating with the adsorption hole arranged in the corresponding supporting table;

[0026] A first vacuum pump corresponding to the deposition chamber and being connected to the vacuum pipeline corresponding to each supporting table in the deposition chamber, and used for extracting gas in the vacuum pipeline;

[0027] A control device used for generating a first control signal according to parameter information corresponding to the initial material layer of the abnormal area of a preset substrate, and the first control signal is used for controlling a speed of the first vacuum pump for extracting gas in the vacuum pipeline corresponding to a preset supporting table, so as to adjust the pressure thereof;

[0028] In a process of forming the initial material layer, the preset substrate is located on the preset supporting table, and the parameter information is used for representing a thickness of the initial material layer.

[0029] In one of the embodiments, the semiconductor device further comprises:

[0030] An adjusting valve corresponding to the vacuum pipeline and used for adjusting an aperture of gas flow in the corresponding vacuum pipeline according to the first control signal;

[0031] The size of the adjusting valve is the same as the aperture of the corresponding vacuum pipeline.

[0032] In one of the embodiments, the semiconductor device further comprises: a chamber vacuum pipeline communicating with the deposition chamber;

[0033] The first vacuum pump is further connected to the chamber vacuum pipeline, and the gas in the deposition chamber is extracted when the chamber vacuum pipeline communicates with the first vacuum pump; or the semiconductor device further comprises: a second vacuum pump connected to the chamber vacuum pipeline, and the gas in the deposition chamber is extracted when the chamber vacuum pipeline communicates with the second vacuum pump.

[0034] In one of the embodiments, the semiconductor device further comprises:

[0035] A testing device corresponding to the deposition chamber and used for detecting pressures in the vacuum pipelines corresponding to the plurality of supporting tables in the deposition chamber, and generating a plurality of pressure detection signals;

[0036] The plurality of pressure detection signals correspond to the plurality of supporting tables respectively, and the control device is further configured to generate the first control signal according to a pressure detection signal corresponding to a preset supporting table.

[0037] In one of the embodiments, the testing device comprises:

[0038] A plurality of first testing modules are arranged in the plurality of vacuum pipelines corresponding to the plurality of supporting tables respectively, and the first testing modules are configured to measure the pressure of the corresponding vacuum pipelines.

[0039] In one of the embodiments, the semiconductor device further comprises:

[0040] A gas pipeline is configured to introduce gas into each of the vacuum pipelines corresponding to the deposition chamber to increase the pressure of the vacuum pipelines.

[0041] In one of the embodiments, the deposition chamber is provided with a plurality of supporting tables, and a plurality of substrates are arranged in the plurality of supporting tables respectively, and the control device is further configured to generate a second control signal according to parameter information of the initial material layer of the abnormal area on the surface of the plurality of substrates;

[0042] The second control signal is configured to control the speed of the first vacuum pump in extracting gas from the vacuum pipelines corresponding to the plurality of supporting tables, so that the pressures of the vacuum pipelines corresponding to different supporting tables are the same.

[0043] A semiconductor device is manufactured by using the above-mentioned semiconductor device manufacturing method or the above-mentioned semiconductor device.

[0044] In the above-mentioned semiconductor device manufacturing method, the first polishing parameter for chemical mechanical polishing of the initial material layer of the abnormal area is adjusted according to the parameter information representing the thickness of the initial material layer of the abnormal area, so that the defects caused by the film thickness of the initial material layer of the abnormal area are avoided, and the product yield of the semiconductor device is improved.

[0045] In the above-mentioned semiconductor device, the control device generates a first control signal according to the parameter information representing the thickness of the initial material layer of the abnormal area on the surface of the preset substrate, controls the speed of the first vacuum pump in extracting gas from the vacuum pipeline corresponding to the preset supporting table, adjusts the pressure of the vacuum pipeline corresponding to the preset supporting table on which the preset substrate is arranged during the process of forming the initial material layer, avoids the film thickness abnormality of the initial material layer of the abnormal area on the surface of the preset substrate corresponding to the preset supporting table, improves the utilization rate of the semiconductor device, and reduces the maintenance cost of the semiconductor device. BRIEF DESCRIPTION OF DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or related art description. Obviously, the drawings in the following description only some of the embodiments of the present disclosure, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0047] Figure 1 Flowchart of the preparation method of the semiconductor device in some embodiments;

[0048] Figure 2A Top view of the substrate after forming the initial material layer in some embodiments;

[0049] Figure 2B Cross-sectional view of the substrate after forming the initial material layer in some embodiments;

[0050] Figure 3 Relationship between the pressure of the vacuum pipeline and the thickness difference in some embodiments;

[0051] Figure 4 Structure diagram of the semiconductor device in some embodiments;

[0052] Figure 5 Structure diagram of the semiconductor device in some embodiments;

[0053] Figure 6 Structure diagram of the semiconductor device in some embodiments.

[0054] Element number explanation:

[0055] Substrate 100, 406; abnormal region 102; initial material layer 103; first test region 104; second test region 106, 1061, 1062, 1063; bearing table 200, 402; adsorption hole 201, 404; first measurement point 202; second measurement point 204, 2041, 2042, 2043; deposition chamber 302; vacuum pipeline 304; control device 306; first vacuum pump 308; first communication control valve 310; vacuum valve 312; chamber vacuum pipeline 314; isolation valve 316; second communication control valve 318; adjusting valve 320; test device 322; second vacuum pump 324; gas pipeline 326; first test module 408; second test module 410. DETAILED DESCRIPTION

[0056] For the purpose of understanding the present embodiments, the present embodiments will be described with respect to the accompanying drawings. The preferred embodiments of the present embodiments are shown in the drawings. However, the present embodiments can be realized in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the present embodiments to those skilled in the art.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present embodiments belong. The terminology used in the description of the present embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present embodiments. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0058] In the description of the present embodiments, it is to be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", and the like are based on the method or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present embodiments and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present embodiments.

[0059] It can be understood that the terms "first", "second", and the like used in the present disclosure can be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. For example, without departing from the scope of the present disclosure, a first vacuum pump can be referred to as a second vacuum pump, and similarly, a second vacuum pump can be referred to as a first vacuum pump. Both the first vacuum pump and the second vacuum pump are vacuum pumps, but they are not the same vacuum pump.

[0060] In addition, the terms "first", "second", are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "a plurality of" is at least two, such as two, three, and the like, unless otherwise explicitly and specifically limited. In the description of the present disclosure, the meaning of "several" is at least one, such as one, two, and the like, unless otherwise explicitly and specifically limited.

[0061] Figure 1 A flowchart of a method for manufacturing a semiconductor device in some embodiments, Figure 2A A top view schematic diagram of a substrate after forming an initial material layer in some embodiments, Figure 2B A cross-sectional view schematic diagram of a substrate after forming an initial material layer in some embodiments, such asFigure 1 、 Figure 2A 、 Figure 2B To solve the above problems, in the embodiment, a preparation method of a semiconductor device is provided, comprising:

[0062] S102, placing the substrate on a carrier table in a deposition chamber.

[0063] Specifically, a substrate 100 for forming a semiconductor device is provided. The constituent material of the substrate 100 includes one of undoped monocrystalline silicon, monocrystalline silicon doped with impurities, silicon-on-insulator (SOI), silicon-on-insulating stack (SSOI), silicon-on-insulating stack germanosilicon (S-SiGeOI), germanosilicon-on-insulator (SiGeOI), germanium-on-insulator (GeOI), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), or any combination thereof. Then, the substrate 100 is placed on a carrier table 200 in a deposition chamber, the deposition chamber is a reaction chamber for forming an initial material layer, the reaction for forming the initial material layer is a thermal reaction, and the temperature has a greater impact on the thickness of the initial material layer; the carrier table 200 is provided with a plurality of adsorption holes 201, and the carrier table 200 is used to carry the substrate 100 and transmit heat from the carrier table 200 to the substrate 100 to heat the substrate 100. After the substrate 100 is placed on the carrier table 200, the opening of the adsorption hole 201 close to the substrate 100 is covered by the substrate 100, and the vacuum pump adsorbs the substrate 100 on the carrier table 200 or releases the substrate 100 from the carrier table 200 by controlling the pressure in the vacuum pipeline connected with the adsorption hole 201.

[0064] S104, forming an initial material layer on the surface of the substrate.

[0065] The initial material layer 103 is formed on the surface of the substrate 100, and in the process of forming the initial material layer 103, the substrate 100 is adsorbed on the carrier table 200 until the deposition of the initial material layer 103 is completed; before the substrate 100 with the initial material layer 103 formed on the surface is taken out of the deposition chamber, the pressure in the adsorption hole 201 and the vacuum pipeline needs to be released to release the substrate 100 from the carrier table 200. The initial material layer 103 includes an abnormal zone 102, the abnormal zone 102 is a region where the thickness of the initial material layer 103 is increased due to the adsorption hole 201, and the orthogonal projection of the adsorption hole 201 on the substrate 100 is located in the abnormal zone 102. When the initial material layer 103 is removed by a subsequent chemical mechanical process with the same grinding parameters, the abnormal zone 102 will have residual initial material layer.

[0066] The adsorption of the vacuum pump to the substrate 100 through the adsorption holes 201 will affect the heat conduction from the carrier table 200 to the part of the substrate 100 covering the adsorption holes 201, and the adsorption strength of the adsorbed substrate 100 decreases with the increase of the pressure of the vacuum pipeline, and the decrease of the adsorption strength makes the heat conduction from the carrier table 200 to the part of the substrate 100 covering the adsorption holes 201 (the area of the substrate 100 where the orthographic projection of the adsorption hole 201 is located) worse, and further affects the thickness of the initial material layer 103 of the abnormal area 102, so that the thickness of the initial material layer 103 of the abnormal area 102 is greater than that of the initial material layer 103 of the area outside the abnormal area 102. Therefore, the pressure of the vacuum pipeline can reflect the thickness of the initial material layer 103 of the abnormal area 102.

[0067] S106, confirming the parameter information corresponding to the initial material layer of the abnormal area.

[0068] The parameter information corresponding to the initial material layer 103 of the abnormal area 102 is confirmed, and the parameter information is used to characterize the thickness of the initial material layer 103 of the abnormal area 102, that is, the parameter information includes parameters related to the thickness of the initial material layer 103. As an example, the parameter information includes pressure information of the vacuum pipeline and thickness information of the initial material layer 103 of the abnormal area 102.

[0069] S108, adjusting the first grinding parameter of the chemical mechanical grinding of the initial material layer of the abnormal area according to the parameter information.

[0070] According to the parameter information corresponding to the initial material layer 103 of the abnormal area 102, the first grinding parameter of the chemical mechanical grinding of the initial material layer 103 of the abnormal area 102 is adjusted, and the first grinding parameter is the process parameter of the chemical mechanical grinding of the initial material layer 103. After the initial material layer 103 on the surface of the substrate 100 is chemically and mechanically ground, residual defects appear at the position corresponding to the abnormal area 102.

[0071] It can be understood that during the chemical mechanical grinding of the initial material layer 103, adjusting the pressure parameter in the grinding parameter corresponding to the initial material layer 103 of the abnormal area 102 can adjust the speed of grinding the initial material layer 103 of the abnormal area 102. Within a certain range, increasing the pressure parameter can increase the speed of grinding the initial material layer 103, and decreasing the pressure parameter can decrease the speed of grinding the initial material layer 103. The change of the speed of grinding the initial material layer 103 with the pressure parameter in the grinding parameter is related to the product, and can be adjusted according to different products.

[0072] The method for manufacturing the semiconductor device adjusts the first polishing parameter for chemical mechanical polishing of the initial material layer 103 of the abnormal area 102 according to the parameter information representing the thickness of the initial material layer 103 of the abnormal area 102, thereby avoiding defects caused by the film thickness of the initial material layer 103 of the abnormal area 102 and improving the product yield of the semiconductor device.

[0073] As shown in Figure 2A , Figure 2B , the initial material layer 103 includes a first test area 104 around the center of the substrate 100, and the abnormal area 102 is located in the first test area 104. In an example, the carrier table 200 is provided with two oppositely arranged adsorption holes 201, and the initial material layer 103 includes two oppositely arranged abnormal areas 102. When the initial material layer 103 is polished by using the same polishing parameter, the abnormal area 102 has a different thickness of the remaining initial material layer 103 from other areas. Further, the first test area 104 fully surrounds the center of the substrate 100.

[0074] As shown in Figure 2A , Figure 2B , in one embodiment, the parameter information is the first thickness of the initial material layer 103 of the abnormal area 102. The confirmation of the parameter information corresponding to the initial material layer 103 of the abnormal area 102 includes steps S202-S206.

[0075] S202, a plurality of first measurement points 202 are selected in the first test area 104.

[0076] S204, the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202 is measured.

[0077] S206, the first thickness T0 of the initial material layer 103 is obtained according to the first intermediate thickness T0x of each first measurement point 202.

[0078] The steps S202-S206 specifically include: first, selecting a plurality of first measurement points 202 in the first test area 104, the distance between the first measurement points 202 and the center of the circle is equal to a preset value, the preset value is the distance between the center point of the normal projection of the adsorption hole 201 on the substrate 100 and the center of the circle, and the preset distance and the preset value are both 21 mm for example; second, measuring the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202, and the measurement position of the measurement point in the online test of the product is different due to the different chip sizes of the semiconductor device. The distance between the first measurement point 202 and the center of the circle is equal to the distance between the center point of the normal projection of the adsorption hole 201 on the substrate 100 and the center of the circle, and therefore, the thickness of the initial material layer 103 of the first measurement point 202 can reflect the thickness of the initial material layer 103 of the abnormal area 102; and third, obtaining the first thickness T0 of the initial material layer 103 according to the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202.

[0079] It can be understood that the more the number of the first measurement points 202 selected in the first test area 104, the more the film thickness abnormality of the initial material layer 103 can be measured in time, the smaller the deviation between the first thickness T0 obtained according to the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202 and the thickness of the initial material layer 103 of the abnormal area 102, and the higher the product yield of the semiconductor device. The number of the first measurement points 202 is greater than or equal to 12 for example.

[0080] According to the parameter information, the first grinding parameter for chemical mechanical grinding of the initial material layer 103 of the abnormal area 102 is adjusted, including: adjusting the first grinding parameter for chemical mechanical grinding of the initial material layer 103 of the abnormal area 102 according to the first thickness of the initial material layer 103 of the abnormal area 102.

[0081] In some embodiments, the step of obtaining the first thickness T0 of the initial material layer 103 according to the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202 includes: obtaining the average value of the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202 as the first thickness T0 of the initial material layer 103.

[0082] In some embodiments, the step of obtaining the first thickness T0 of the initial material layer 103 according to the first intermediate thickness T0x of the initial material layer corresponding to each first measurement point 202 includes: obtaining the maximum value of the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202 as the first thickness T0 of the initial material layer 103.

[0083] In one embodiment, there is at least one first measuring point 202 whose distance between its orthographic projection on the supporting platform 200 and the adjacent adsorption hole 201 is less than or equal to a preset distance, and the preset distance is the maximum distance between the center point of the orthographic projection of the adsorption hole 201 on the substrate 100 and the edge of the abnormal area 102.

[0084] like Figure 2A 、 Figure 2B As shown, in one embodiment, multiple first measurement points 202 are evenly arranged along the circumference of the first test area 104, that is, the first measurement points 202 are set on a preset circle with a distance from the center of the circle equal to a preset value, and the distances between adjacent first measurement points 202 on the circumference of the preset circle are the same, which simplifies the difficulty of selecting the first measurement points 202.

[0085] In one embodiment, multiple first measurement points 202 are randomly arranged along the circumferential direction of the first test area 104, that is, the first measurement points 202 are set on a preset circle with a distance from the center of the circle equal to a preset value, and the distances between adjacent first measurement points 202 on the circumference of the preset circle are randomly set. This setting can avoid the problem that the thickness of the initial material layer at the first measurement point 202 cannot reflect the abnormal film thickness of the initial material layer.

[0086] In one embodiment, the initial material layer further includes a plurality of second test areas 106 surrounding the center of the circle, and the first test area 104 is adjacent to at least one of the second test areas 106; Figure 2A As shown, illustratively, the second test area 106 includes a second test area 1061, a second test area 1062 and a second test area 1063, and the first test area 104 is adjacent to the second test area 1061 and the second test area 1062, respectively. For example, the second test area 1061, the first test area 104, the second test area 1062 and the second test area 1163 are concentric circles or rings with radii from small to large.

[0087] In one embodiment, the method for preparing a semiconductor device further includes steps S302 - S304 .

[0088] S302 , confirming the second thickness T1x of the initial material layer in each of the second test areas 106 .

[0089] like Figure 2A 、 Figure 2BAs shown, specifically, N1 second measurement points 2041 are selected in the second test area 1061, N2 second measurement points 2042 are selected in the second test area 1062, and N3 second measurement points 2043 are selected in the third test area 1063, where N1, N2 and N3 are integers greater than or equal to 1; the second thickness T11 of the initial material layer in the second test area 1061 is obtained according to the second thickness of the initial material layer corresponding to the N1 second measurement points 2041; the second thickness T12 of the initial material layer in the second test area 1062 is obtained according to the second thickness of the initial material layer corresponding to the N2 second measurement points 2042; and the second thickness T13 of the initial material layer in the third test area 1063 is obtained according to the second thickness of the initial material layer corresponding to the N3 second measurement points 2043.

[0090] In one embodiment, the plurality of second test areas 106 are arranged along the radius of the substrate, and the number of second measurement points 204 corresponding to the second test areas 106 close to the center is less than the number of second measurement points 204 corresponding to the second test areas 106 far from the center. By this arrangement, the accuracy and testing rate of measuring the second thickness of the initial material layer corresponding to each second test area 106 can be improved.

[0091] As shown in the examples, Figure 2A , Figure 2B As shown, the second test area 1061, the second test area 1062 and the second test area 1063 are arranged along the radius of the substrate from the center to the direction away from the center, the number N1 of second measurement points 2041 is less than the number N2 of second measurement points 2042, and is less than the number N3 of second measurement points 2043, and the number N2 of second measurement points 2042 is less than the number N3 of second measurement points 2043.

[0092] Further, the substrate has a size of a circle with a diameter of 300 mm (for example, a 12-inch wafer), the N1 second measurement points 2041 in the second test area 1061 are on a circle with a distance of less than 50 mm from the center, the N2 second measurement points 2042 in the second test area 1062 are on a circle with a distance of 97 mm from the center, and the N3 second measurement points 2043 in the third test area 1063 are on a circle with a distance of 147 mm from the center.

[0093] S304, adjusting the second polishing parameters for the chemical mechanical polishing of the initial material layer in each second test area according to the second thickness T1x of each second test area.

[0094] The second polishing parameter C11 for the initial material layer of the second test area 1061 is adjusted according to the second thickness T11 of the initial material layer of the second test area 1061; the second polishing parameter C12 for the initial material layer of the second test area 1062 is adjusted according to the second thickness T12 of the initial material layer of the second test area 1062; and the second polishing parameter C13 for the initial material layer of the second test area 1063 is adjusted according to the second thickness T13 of the initial material layer of the second test area 1063.

[0095] In some embodiments, the second polishing parameter for the initial material layer of the second test area 106 is determined according to the second thickness T1x of the initial material layer of the second test area 106 and the first thickness T0 of the initial material layer of the abnormal area 102.

[0096] For example, the thickness difference between the second thickness T1x and the first thickness T0 is ΔT=T0-T1x, the first thickness T0 is greater than or equal to the second thickness T1x, and the pressure parameter Y11 for the chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is used when the ΔT corresponding to the second thickness T1x is between 0 angstrom and 100 angstrom; the pressure parameter Y12 for the chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is used when the ΔT corresponding to the second thickness T1x is between 100 angstrom and 200 angstrom; the pressure parameter Y13 for the chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is used when the ΔT corresponding to the second thickness T1x is between 200 angstrom and 250 angstrom; the pressure parameter Y14 for the chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is used when the ΔT corresponding to the second thickness T1x is between 250 angstrom and 300 angstrom; the pressure parameter Y15 for the chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is used when the ΔT corresponding to the second thickness T1x is between 300 angstrom and 400 angstrom; the greater the thickness difference ΔT, the greater the thickness of the initial material layer to be polished, the greater the pressure parameter of the chemical mechanical polishing, the faster the polishing speed of the initial material layer, and the smaller the difference between the second thickness T1x and the first thickness T0, thereby reducing the influence of the film thickness deviation of the abnormal area 102 on the performance of the semiconductor device. Therefore, Y15 is greater than or equal to Y14, Y14 is greater than or equal to Y13, Y13 is greater than or equal to Y12, and Y12 is greater than or equal to Y11.

[0097] In one embodiment, the parameter information is the first pressure of the vacuum pipeline connected to the adsorption hole, and the step of confirming the parameter information corresponding to the initial material layer of the abnormal area includes: measuring the first pressure of the vacuum pipeline connected to the adsorption hole during the step of depositing the initial material layer.

[0098] Specifically, the step of depositing to form the initial material layer refers to a process in which the thickness of the initial material layer on the substrate increases with the increase of the process time. After the initial material layer is formed on the surface of the substrate, when the film thickness of the initial material layer in the area corresponding to the adsorption hole (abnormal area 102) on the surface of the substrate appears abnormal, the conventional method is to replace the carrier table or clean the vacuum pipeline. Replacing the carrier table has high cost, the probability of improving the film thickness abnormality by cleaning the vacuum pipeline is uncontrollable, and the process of cleaning the vacuum pipeline needs to be stopped, which reduces the overall utilization rate of the machine. When the pressure in the vacuum pipeline is relatively large, the adsorption force of the substrate on the carrier table through the vacuum pipeline and the adsorption hole is small, and the heat conduction between the carrier table and the substrate is poor. The film thickness of the initial material layer formed on the surface of the substrate in the area corresponding to the adsorption hole (abnormal area 102) is much larger than that of the initial material layer in other positions. Therefore, the first pressure of the vacuum pipeline in communication with the adsorption hole can be used to represent the thickness of the initial material layer 103 in the abnormal area 102.

[0099] Figure 3 For the relationship between the pressure of the vacuum pipeline and the thickness difference in some embodiments, the thickness difference is the difference between the thickness of the initial material layer 103 in the abnormal area 102 and the thickness of the initial material layer 103 in the second test area 106, as shown in Figure 3 For example, when the material of the initial material layer is silicon dioxide, the thickness difference is 200 angstroms when the pressure of the vacuum pipeline is 6.2 Torr; the thickness difference is 70 angstroms when the pressure of the vacuum pipeline is 5.9 Torr; the thickness difference is 60 angstroms when the pressure of the vacuum pipeline is 5.5 Torr; and the thickness difference is 50 angstroms when the pressure of the vacuum pipeline is 4.9 Torr. Therefore, the pressure of the vacuum pipeline has a greater correlation with the thickness of the initial material layer 103 in the abnormal area 102 corresponding to the projection position of the adsorption hole on the substrate. The thickness of the initial material layer 103 corresponding to the abnormal area 102 can be represented by the pressure of the vacuum pipeline.

[0100] At this time, according to the parameter information, the first grinding parameter for chemical mechanical grinding of the initial material layer in the abnormal area is adjusted, including: according to the first pressure of the vacuum pipeline, the first grinding parameter for chemical mechanical grinding of the initial material layer in the abnormal area is adjusted.

[0101] For example, in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 4.0 Torr-5.0 Torr, the pressure parameter Y21 is used for the chemical mechanical polishing of the abnormal area 102; in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 5.0 Torr-5.5 Torr, the pressure parameter Y22 is used for the chemical mechanical polishing of the abnormal area 102; in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 5.5 Torr-6.0 Torr, the pressure parameter Y23 is used for the chemical mechanical polishing of the abnormal area 102; in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 6.0 Torr-6.5 Torr, the pressure parameter Y24 is used for the chemical mechanical polishing of the abnormal area 102; the greater the first pressure of the vacuum pipeline, the worse the heat conduction, the more obvious the abnormality of the thickness of the initial material layer of the abnormal area 102 compared with the second test area 106, and the greater the speed of the chemical mechanical polishing of the initial material layer of the abnormal area 102. The speed of the chemical mechanical polishing increases with the increase of the pressure parameter, and therefore, in order to achieve the purpose of defect improvement, Y24≥Y23≥Y22≥Y21.

[0102] In one of the embodiments, the method for manufacturing the semiconductor device further comprises: adjusting the pressure of the vacuum pipeline communicated with the adsorption hole according to the parameter information. By adjusting the pressure of the vacuum pipeline, the thickness of the initial material layer of the abnormal area formed by the subsequent deposition chamber can be adjusted, so that the thickness of the initial material layer of the abnormal area is not too large after the initial material layer is formed by the subsequent deposition chamber, thereby obtaining a substrate with an initial material layer having good film thickness uniformity, reducing the frequency of adjusting the first polishing parameter of the chemical mechanical polishing of the initial material layer of the abnormal area, and simplifying the process steps.

[0103] In some embodiments, the adjustment of the first polishing parameter of the chemical mechanical polishing of the initial material layer of the abnormal area and the pressure of the vacuum pipeline according to the parameter information is realized by Advanced Process Control (APC), so that the generation of defects can be timely and effectively avoided.

[0104] It should be understood that, although Figure 1 The steps in the flowchart of FIG. 1 are not necessarily performed in the order indicated by the arrows. Unless specifically stated, the order of execution of the steps is not strictly limited, and the steps can be executed in other orders. Moreover, Figure 1At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0105] Figure 4 is a schematic structural diagram of a semiconductor device in some embodiments, such as Figure 4 As shown, in this embodiment, a semiconductor device is provided, including a deposition chamber 302, a vacuum line 304, a control device 306 and a first vacuum pump 308; a plurality of carriers 402 are provided in the deposition chamber 302, and a plurality of adsorption holes 404 are provided on the carrier 402. The carrier 402 is used to carry and transfer heat to a substrate 406 located on the carrier 402. The deposition chamber 302 is used to form an initial material layer, and the initial material layer includes an abnormal area. The orthographic projection of the adsorption holes 404 on the substrate is located in the abnormal area; the vacuum line 304 is provided corresponding to the carrier 402 and is connected to the adsorption holes 404 opened in the carrier 402. 04 is connected; a first vacuum pump 308 is arranged corresponding to the deposition chamber 302, and is respectively connected to the vacuum pipeline 304 corresponding to each of the supporting platforms 402 in the deposition chamber 302, and is used to extract the gas of the vacuum pipeline 304 connected thereto; the control device 306 is used to generate a first control signal according to the parameter information corresponding to the initial material layer of the abnormal area of ​​the preset substrate, and the first control signal is used to control the speed of the first vacuum pump 308 in extracting the gas from the vacuum pipeline 304 corresponding to the preset supporting platform to adjust its pressure; wherein, the preset substrate is located on the preset supporting platform during the process of forming the initial material layer, and the parameter information is used to characterize the thickness of the initial material layer.

[0106] For example, Figure 4 As shown, two carriers 402 are provided in the deposition chamber 302. After the substrate 406 is placed on the carrier 402, the substrate 406 is adsorbed on the carrier 402 by changing the pressure of the vacuum line 304 corresponding to the carrier 402 where the substrate 406 is located. The deposition chamber 302 is used to form an initial material layer. In the process step of forming the initial material layer, a preset substrate is adsorbed on a preset carrier in the deposition chamber 302. The preset carrier transfers heat to the preset substrate located on the preset carrier, and the initial material layer is formed on the preset substrate through the deposition chamber 302.

[0107] The preset substrate is located on the preset carrier table. By changing the pressure of the vacuum pipeline 304 corresponding to the preset carrier table, the preset substrate is adsorbed on the preset carrier table. The pressure of the vacuum pipeline 304 will affect the projection area of the adsorption hole 404 on the preset substrate, and the thickness of the initial material layer formed in the area with a certain distance between the projection area and the preset substrate surface. These areas are collectively referred to as abnormal areas. Then, the initial material layer is formed on the surface of the preset substrate, and the initial material layer includes abnormal areas. The projection of the adsorption hole 404 in the preset carrier table on the preset substrate is located in the abnormal area.

[0108] By controlling the speed of the first vacuum pump 308 to extract the gas in the vacuum pipeline 304 connected thereto, the pressure in the vacuum pipeline 304 connected to the first vacuum pump 308 can be adjusted to achieve uniformity adjustment of the initial material layer. Increasing the pressure in the vacuum pipeline 304 can increase the thickness of the initial material layer in the abnormal area, and reducing the pressure in the vacuum pipeline 304 can reduce the thickness of the initial material layer in the abnormal area.

[0109] It can be understood that in the case where the vacuum pipeline 304 is connected to the first vacuum pump 308, the pressure of the vacuum pipeline 304 decreases with the increase of the speed of the first vacuum pump 308 to extract the gas in the vacuum pipeline 304 (the suction force of the first vacuum pump 308 to extract the gas in the vacuum pipeline 304).

[0110] The control device 306 generates a first control signal for adjusting the pressure of the vacuum pipeline 304 corresponding to the preset carrier table according to the parameter information corresponding to the initial material layer in the abnormal area of the preset substrate, so as to improve the thickness of the initial material layer in the adsorption area. Without replacing the carrier table or cleaning the vacuum pipeline, the uniformity of the thickness of the initial material layer formed on the preset substrate located on the preset substrate is improved, and the residue of the initial material layer after chemical mechanical polishing of the initial material layer on the preset substrate is avoided.

[0111] In the above semiconductor equipment, the control device 306 generates a first control signal according to the parameter information representing the thickness of the initial material layer in the abnormal area of the preset substrate surface, and controls the speed of the first vacuum pump to extract the gas in the vacuum pipeline corresponding to the preset carrier table, so as to adjust the pressure of the vacuum pipeline 304 corresponding to the preset carrier table on which the preset substrate is located during the process of forming the initial material layer. The film thickness of the initial material layer in the abnormal area of the preset substrate surface corresponding to the preset carrier table is avoided, the utilization rate of the semiconductor equipment is improved, the maintenance cost of the semiconductor equipment is reduced, and the yield of the semiconductor device prepared by using the semiconductor equipment is improved.

[0112] As Figure 4As shown, each vacuum line 304 corresponding to each carrier 402 in the deposition chamber 302 is connected to the vacuum main line through the vacuum main line and the first vacuum pump 308. The semiconductor device further comprises a first communication control valve 310 corresponding to each vacuum line 304, which is used to control the communication and disconnection of the vacuum line 304 corresponding thereto and the vacuum main line. For example, when the first communication control valve 310 corresponding to the vacuum line 304 is opened, the vacuum line 304 is in communication with the vacuum main line; when the first communication control valve 310 corresponding to the vacuum line 304 is closed, the vacuum line 304 is disconnected from the vacuum main line.

[0113] As shown in some embodiments, the semiconductor device further comprises a vacuum valve 312 corresponding to the vacuum main line, which is used to control the communication and disconnection of the vacuum main line and the first vacuum pump 308. For example, when the vacuum valve 312 is opened, the vacuum main line is in communication with the first vacuum pump 308, and the gas in the vacuum line 304 connected to the vacuum main line can be extracted by the first vacuum pump 308; when the vacuum valve 312 is closed, the vacuum main line is disconnected from the first vacuum pump 308, and the gas in the vacuum line 304 connected to the vacuum main line cannot be extracted by the first vacuum pump 308. Figure 4

[0114] For example, a preset substrate is placed on the surface of a preset carrier in a preset deposition chamber, a preset vacuum line corresponds to the preset carrier, a preset first communication control valve is arranged corresponding to the preset vacuum line, and the communication and disconnection of the vacuum main line corresponding to the preset deposition chamber and the first vacuum pump 308 are controlled by a preset vacuum valve; when the preset first communication control valve and the preset vacuum valve are opened, the preset vacuum line is in communication with the first vacuum pump 308, and the first vacuum pump 308 controls the pressure in the preset vacuum line by extracting the gas in the preset vacuum line to adsorb the preset substrate on the preset carrier.

[0115] As shown in some embodiments, the semiconductor device further comprises a chamber vacuum line 314 corresponding to the deposition chamber 302 and in communication with the deposition chamber 302, the pressure of the chamber vacuum line 314 is the same as the chamber pressure in the deposition chamber 302, and the first vacuum pump 308 is also connected to the chamber vacuum line 314. When the chamber vacuum line 314 (the deposition chamber 302) is in communication with the first vacuum pump 308, the gas in the deposition chamber 302 is extracted, thereby controlling the chamber pressure in the deposition chamber 302. When one first vacuum pump 308 is used to extract the gas in the vacuum line 304 and the deposition chamber 302, the number of vacuum pumps can be reduced, and the cost of the semiconductor device can be reduced. Figure 4

[0116] Figure 4 ​​​As shown, in some embodiments, the semiconductor device further includes an isolation valve 316, which is disposed corresponding to the chamber vacuum line 314 and is used to control the connection and isolation between the chamber vacuum line 314 and the first vacuum pump 308. For example, when the isolation valve 316 is open, the chamber vacuum line 314 is connected to the first vacuum pump 308, and the gas in the deposition chamber 302 is extracted by the first vacuum pump 308 to control the chamber pressure in the deposition chamber 302. When the isolation valve 316 is closed, the chamber vacuum line 314 is isolated from the first vacuum pump 308.

[0117] like Figure 4 As shown, in some embodiments, the semiconductor device further includes a second communication control valve 318 , which is provided corresponding to the vacuum main line and is used to control the communication and isolation between the vacuum main line and the chamber vacuum line 314 .

[0118] Illustratively, when the second connecting control valve 318 is opened, the vacuum main line is connected to the chamber vacuum line 314, and the pressure of the vacuum main line is the same as the chamber pressure in the deposition chamber 302. A preset substrate is placed on the supporting platform 402 corresponding to the vacuum line 304 connected to the vacuum main line. The pressure in the vacuum line 304 connected to the vacuum main line is the same as the chamber pressure in the deposition chamber 302, so that the front and back sides of the preset substrate are subjected to the same pressure, the pressure on the back side of the preset substrate is relieved, and the preset substrate on the preset supporting platform is released; when the second connecting control valve 318 is closed, the vacuum main line is isolated from the chamber vacuum line 314. At this time, the vacuum valve 312 can be opened to connect the vacuum main line to the first vacuum pump 308.

[0119] For example, the second communication control valve 318 and the vacuum valve 312 have opposite states, including open and closed.

[0120] Figure 5 is a schematic structural diagram of a semiconductor device in some embodiments, such as Figure 5As shown, in one embodiment, the semiconductor device further comprises a regulating valve 320, which is arranged corresponding to the vacuum pipeline 304, for adjusting the aperture of the gas flow in the corresponding vacuum pipeline 304 according to the first control signal; wherein the size of the regulating valve 320 is the same as the aperture of the corresponding vacuum pipeline 304, and the same here means that the size of the regulating valve 320 satisfies that the aperture of the gas flow in the corresponding vacuum pipeline 304 can be adjusted by the regulating valve 320. Exemplarily, the regulating valve 320 comprises a quarter-inch needle valve. By adjusting the aperture of the gas flow in the preset vacuum pipeline in the vacuum pipeline 304, the flux of the preset vacuum pipeline can be adjusted, and then the speed of the first vacuum pump 308 for extracting the gas in the preset vacuum pipeline is adjusted, so as to adjust the pressure of the preset vacuum pipeline, and to adjust the uniformity of the initial material layer on the substrate surface formed on the corresponding carrier table 402 of the preset vacuum pipeline.

[0121] It can be understood that after the flux of the vacuum pipeline 304 is increased, the gas in the vacuum pipeline 304 is more easily extracted, and in the case that the extraction speed of the first vacuum pump 308 is unchanged, the pressure of the vacuum pipeline 304 is reduced; after the flux of the vacuum pipeline 304 is reduced, the difficulty of extracting the gas in the vacuum pipeline 304 is increased, and in the case that the extraction speed of the first vacuum pump 308 is unchanged, the pressure of the vacuum pipeline 304 is increased. Exemplarily, reducing the pressure of the vacuum pipeline 304 makes the heat conduction better, and increases the uniformity of the initial material layer on the substrate surface formed on the corresponding carrier table 402 of the vacuum pipeline 304; increasing the pressure of the vacuum pipeline 304 makes the heat conduction worse, and reduces the uniformity of the initial material layer on the substrate surface formed on the corresponding carrier table 402 of the vacuum pipeline 304.

[0122] In some embodiments, different carrier tables 402 in the same deposition chamber 302 correspond to different regulating valves 320; in the case that the regulating valve 320 adjusts the aperture of the gas flow in the corresponding vacuum pipeline 304 according to the first control signal, the pressure in the vacuum pipeline 304 corresponding to other carrier tables 402 in the same deposition chamber 302 changes, so that the deviation between the pressures in the vacuum pipelines 304 corresponding to different carrier tables 402 in the same deposition chamber 302 is reduced, and the deviation between the film thicknesses of the initial material layers on different substrate surfaces formed on different carrier tables 402 in the same deposition chamber 302 is reduced, thereby reducing the film thickness difference between different substrates.

[0123] For example, assuming that a carrier A1 and a carrier A2 are provided in the deposition chamber 302, the vacuum line B1 is connected to the adsorption hole 404 in the carrier A1, and the vacuum line B2 is connected to the adsorption hole 404 in the carrier A2. When the sum of the pressures of the vacuum line B1 and the vacuum line B2 remains unchanged, the regulating valve 320 corresponding to the vacuum line B1 can be adjusted to adjust the pressure of the vacuum line B2. For example, when the pressure of the vacuum line B1 is increased, the pressure of the vacuum line B2 will decrease, thereby achieving the matching of the pressure of the vacuum line B1 and the pressure of the vacuum line B2, reducing the difference between the two, and reducing the thickness difference between the initial material layers formed on the surfaces of the substrates located on the carrier A1 and the carrier A2.

[0124] In one embodiment, a plurality of carriers 402 are provided in the deposition chamber 302, and a plurality of substrates are respectively provided corresponding to the plurality of carriers 402. The control device 306 is further used to generate a second control signal according to parameter information corresponding to the initial material layer of the abnormal area on the surface of the plurality of substrates; wherein the second control signal is used to control the first vacuum pump 308 to extract and adjust the speed of the gas in the vacuum pipeline 304 corresponding to the plurality of carriers 402, so that the pressure of the vacuum pipeline 304 corresponding to different carriers 402 is the same, thereby achieving pressure matching between the vacuum pipelines 304 corresponding to different carriers 402 in the same deposition chamber 302, and reducing the difference in film thickness of the initial material layer on the plurality of substrates respectively provided corresponding to the plurality of carriers 402 in the same deposition chamber 302.

[0125] The same pressure means that the difference between the pressures in the vacuum pipeline 304 corresponding to different carriers 402 in the same deposition chamber 302 is less than or equal to the pressure deviation. The pressure deviation refers to the maximum difference in the pressures in the vacuum pipeline 304 corresponding to the initial material layer when the defects caused by the film thickness deviation between the initial material layers of different film thicknesses are acceptable.

[0126] like Figure 5 As shown, in one embodiment, a plurality of carriers 402 are provided in the deposition chamber, and the semiconductor equipment further includes a testing device 322; the testing device 322 is provided corresponding to the deposition chamber 302, and is used to detect the pressure in the vacuum pipeline 304 corresponding to the plurality of carriers 402 in the deposition chamber 302, and generate a plurality of pressure detection signals; wherein the plurality of pressure detection signals correspond to the plurality of carriers 402 respectively, and the control device 306 is further used to generate the first control signal according to the pressure detection signal corresponding to the preset carrier; the pressure of the vacuum pipeline 304 is detected by the testing device 322, thereby improving the efficiency and accuracy of adjusting the pressure of the vacuum pipeline 304 corresponding to the preset carrier.

[0127] like Figure 5As shown in the figure, in some embodiments, the testing device 322 comprises a plurality of first testing modules 408, the plurality of first testing modules 408 and the plurality of carrier tables 402 correspondingly arranged, and the first testing modules 408 are used for measuring the pressure of the corresponding vacuum pipelines 304. The pressure of the vacuum pipeline 304 can be measured by the first testing module 408, the pressure of each vacuum pipeline 304 can be detected at the same time, and the efficiency of adjusting the pressure of the plurality of vacuum pipelines 304 corresponding to the plurality of preset carrier tables according to the first control signal is improved. For example, the first testing module 408 comprises a pressure detector.

[0128] As shown in the figure, Figure 5 In some embodiments, the testing device 322 further comprises a second testing module 410, the second testing module 410 is arranged corresponding to the vacuum main pipeline, the pressure of the vacuum main pipeline can be measured by the second testing module 410, the pressure of the plurality of vacuum pipelines 304 corresponding to the deposition chamber 302 and communicating with the vacuum main pipeline can be obtained by the second testing module 410, the further determination of the pressure is realized, and the influence of the abnormal first testing module 408 on the pressure measurement is eliminated. For example, the second testing module 410 comprises a pressure detector.

[0129] Figure 6 For the structural schematic diagram of the semiconductor equipment in some embodiments, as shown in the figure, Figure 6 In one of the embodiments, the semiconductor equipment further comprises a second vacuum pump 324, the second vacuum pump 324 is arranged corresponding to the deposition chamber 302 and interfaces with the chamber vacuum pipeline 314, and is used for extracting the gas in the deposition chamber 302 when the deposition chamber 302 communicates with the second vacuum pump 324. By separating the vacuum pump corresponding to the vacuum pipeline 304 and the deposition chamber 302, the dust in the deposition chamber 302 can be prevented from polluting the vacuum pipeline, the frequency of adjusting the pressure of the vacuum pipeline 304 is reduced, and the utilization rate of the semiconductor equipment is improved.

[0130] For example, the range of the first testing module 408 and the second testing module 410 is greater than 0 and less than or equal to a preset pressure; the preset pressure is the maximum pressure in the vacuum pipeline 304 when each vacuum pipeline 304 corresponding to the deposition chamber 302 communicates with the vacuum pump and the vacuum pump does not extract the gas in the vacuum pipeline 304. Further, when the vacuum pump extracts the air to make the vacuum pipeline 304 close to vacuum, the pressure in the vacuum pipeline 304 is 6 Torr, and the preset pressure is 600 Torr.

[0131] It will be appreciated that isolation valve 316 is provided in correspondence with chamber vacuum line 314 to control the connection and isolation between chamber vacuum line 314 and second vacuum pump 324. For example, when isolation valve 316 is open, chamber vacuum line 316 communicates with second vacuum pump 324, which pumps gas from deposition chamber 302 to control the chamber pressure within deposition chamber 302. When isolation valve 316 is closed, chamber vacuum line 316 is isolated from second vacuum pump 324. By providing different vacuum pumps to pump gas from vacuum line 304 and deposition chamber 302, pressure control of vacuum line 304 is facilitated, contamination of the interior of vacuum line 304 by contaminants within deposition chamber 302 is prevented, dust accumulation within vacuum line 304 is reduced, and the frequency of pressure adjustment of vacuum line 304 is reduced, thereby improving the utilization rate of semiconductor equipment.

[0132] like Figure 6 As shown, in one embodiment, the semiconductor device further includes a gas line 326 for supplying gas to each of the vacuum lines 304 corresponding to the deposition chamber 302 to increase the pressure of the vacuum line 304. The gas line 326 can increase the pressure of the vacuum line 304 so that the pressure of the vacuum line 304 is equal to the chamber pressure of the deposition chamber 302, thereby relieving the pressure on the back side of the substrate positioned on the carrier 402. The gas line 326 improves the balance efficiency between the pressure of the vacuum line 304 and the chamber pressure of the deposition chamber 302, shortening the process time and improving the utilization rate of the semiconductor device.

[0133] Furthermore, the gas line 326 is connected to the vacuum main line, and the gas enters the vacuum line 304 from the gas line through the vacuum main line. For example, the gas introduced into the gas line 326 includes nitrogen, which is cheap, stable in activity, and easy to obtain.

[0134] In some embodiments, a semiconductor device is provided, which is manufactured using the above-mentioned method for manufacturing a semiconductor device; or manufactured using the above-mentioned semiconductor equipment.

[0135] In some embodiments, an electronic device is provided, comprising the semiconductor device described above. The electronic device may include a smartphone, a computer, a tablet computer, an artificial intelligence device, a wearable device, or a smart mobile terminal. The embodiments of the present application do not impose any particular restrictions on the specific form of the electronic device described above.

[0136] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0137] The above-described embodiments only express several implementation manners of the present disclosure, the description is relatively specific and detailed, but it cannot be understood as a limitation on the scope of the patent. It should be noted that, for those skilled in the art, without departing from the concept of the present disclosure, several modifications and improvements can be made, which are within the protection scope of the present disclosure.

Claims

1. A method of manufacturing a semiconductor device, characterized by, The method comprises the following steps: placing a substrate on a supporting table of a deposition chamber, wherein a plurality of adsorption holes are formed in the supporting table, and the supporting table is used for supporting and transferring heat to the substrate; forming an initial material layer on a surface of the substrate, wherein the initial material layer comprises an abnormal area, and a normal projection of the adsorption hole on the substrate is located in the abnormal area; confirming parameter information corresponding to the initial material layer of the abnormal area, wherein the parameter information is used for characterizing a thickness of the initial material layer; adjusting a first polishing parameter of chemical mechanical polishing of the initial material layer of the abnormal area according to the parameter information; the initial material layer comprises a first test area surrounding a center of the substrate, and the abnormal area is located in the first test area, and the step of confirming the parameter information corresponding to the initial material layer of the abnormal area comprises: selecting a plurality of first measuring points in the first test area, wherein a distance between the first measuring point and the center is equal to a preset value, the plurality of first measuring points are uniformly arranged along a circumferential direction of the first test area, and the preset value is a distance between a center point of the normal projection of the adsorption hole on the substrate and the center; measuring a first intermediate thickness of the initial material layer corresponding to each first measuring point; obtaining a first thickness of the initial material layer of the abnormal area according to the first intermediate thickness corresponding to each first measuring point, and taking the first thickness as the parameter information.

2. The method of producing a semiconductor device according to claim 1, wherein A distance between a normal projection of at least one first measuring point on the supporting table and an adjacent adsorption hole is less than or equal to a preset distance, and the preset distance is a maximum distance between the normal projection of the adsorption hole on the substrate and an edge of the abnormal area.

3. The method of producing a semiconductor device according to claim 1, wherein The initial material layer further comprises a plurality of second test areas surrounding the center, and the first test area is adjacent to at least one second test area; and the method further comprises: confirming a second thickness of the initial material layer of each second test area; adjusting a second polishing parameter of chemical mechanical polishing of the initial material layer of each second test area according to the second thickness of each second test area; wherein the plurality of second test areas are arranged along a radius of the substrate, and a number of second measuring points corresponding to a second test area close to the center is less than a number of second measuring points corresponding to a second test area far from the center.

4. The method of producing a semiconductor device according to Claim 1, wherein The step of confirming the parameter information corresponding to the initial material layer of the abnormal area comprises: In the step of forming the initial material layer by deposition, a first pressure of a vacuum pipeline in communication with the adsorption hole is measured, and the first pressure is taken as the parameter information; the first pressure is greater than or equal to 4 Torr and less than or equal to 6.5 Torr.

5. The method of producing a semiconductor device according to any one of claims 1 to 4, wherein The method further comprises: adjusting a pressure of a vacuum pipeline in communication with the adsorption hole according to the parameter information.

6. A semiconductor device, characterized by comprising: The method comprises the following steps: A deposition chamber is provided with a plurality of supporting tables, and a plurality of adsorption holes are formed in the supporting tables, the supporting tables are used for supporting and transferring heat to a substrate, the deposition chamber is used for forming an initial material layer, the initial material layer includes an abnormal area, and a normal projection of the adsorption hole on the substrate is located in the abnormal area; A vacuum pipeline is arranged corresponding to the supporting table and is communicated with the adsorption hole formed in the corresponding supporting table; A first vacuum pump is arranged corresponding to the deposition chamber, is respectively connected with the vacuum pipeline corresponding to each supporting table in the deposition chamber, and is used for extracting the gas in the vacuum pipeline connected therewith; A control device is used for generating a first control signal according to parameter information corresponding to the initial material layer of the abnormal area of a preset substrate, and the first control signal is used for controlling the speed of the first vacuum pump for extracting the gas in the vacuum pipeline corresponding to the preset supporting table, so as to adjust the pressure of the vacuum pipeline; In the process of forming the initial material layer, the preset substrate is located on the preset supporting table, and the parameter information is used for representing the thickness of the initial material layer of the abnormal area.

7. The semiconductor device according to claim 6, wherein The semiconductor device further includes: An adjusting valve is arranged corresponding to the vacuum pipeline and is used for adjusting the aperture of the gas flow in the corresponding vacuum pipeline according to the first control signal; The size of the adjusting valve is the same as the aperture of the corresponding vacuum pipeline.

8. The semiconductor device of claim 6, wherein The semiconductor device further includes a chamber vacuum pipeline communicated with the deposition chamber; The first vacuum pump is also connected with the chamber vacuum pipeline, and the gas in the deposition chamber is extracted when the chamber vacuum pipeline is communicated with the first vacuum pump; or the semiconductor device further includes a second vacuum pump connected with the chamber vacuum pipeline, and the gas in the deposition chamber is extracted when the chamber vacuum pipeline is communicated with the second vacuum pump.

9. The semiconductor device of claim 6, wherein The deposition chamber is provided with a plurality of supporting tables, and the semiconductor device further includes: A testing device is arranged corresponding to the deposition chamber and is used for detecting the pressure in the vacuum pipeline corresponding to the plurality of supporting tables in the deposition chamber and generating a plurality of pressure detection signals; The plurality of pressure detection signals correspond to the plurality of supporting tables respectively, and the control device is further used for generating the first control signal according to the pressure detection signal corresponding to a preset supporting table.

10. The semiconductor device of claim 9, wherein, The testing device includes: A plurality of first testing modules are arranged corresponding to the vacuum pipelines corresponding to the plurality of supporting tables respectively, and the first testing module is used for measuring the pressure of the corresponding vacuum pipeline.

11. The semiconductor device of claim 6, wherein The semiconductor device further includes: A gas pipeline is used for introducing gas into each vacuum pipeline corresponding to the deposition chamber, so as to increase the pressure of the vacuum pipeline.

12. The semiconductor device of claim 6, wherein The deposition chamber is provided with a plurality of supporting tables, and a plurality of substrates are arranged corresponding to the plurality of supporting tables respectively, and the control device is further used for generating a second control signal according to parameter information corresponding to the initial material layer of the abnormal area on the surface of the plurality of substrates; The second control signal is used to control the speed of the first vacuum pump for extracting the gas in the vacuum pipeline corresponding to the plurality of carrying tables, so that the pressures of the vacuum pipelines corresponding to different carrying tables are the same.

13. A semiconductor device, characterized by comprising: The semiconductor device is prepared by the method of any one of claims 1-5; or the semiconductor device is prepared by the method of any one of claims 6-12.

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