Directly bonded copper substrate, insulated gate bipolar transistor package module and fabrication process

Abstract

The embodiment of the present application provides a directly bonded copper substrate, an insulated gate bipolar transistor packaging module and a preparation process, the directly bonded copper substrate can comprise: a first copper cladding layer; a ceramic layer, one side of which is connected with one side of the first copper cladding layer, the ceramic layer is added with a toughening substance; and a second copper cladding layer, one side of which is connected with the other side of the ceramic layer. The ceramic layer is toughened by adding the toughening substance to the ceramic layer, so that the problem that the insulated gate bipolar transistor packaging module is invalid due to the cracking of the ceramic layer is avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chips, in particular to a directly bonded copper substrate, an insulated gate bipolar transistor packaging module, a preparation process of the directly bonded copper substrate and a preparation process of the insulated gate bipolar transistor packaging module. BACKGROUND

[0002] At present, IGBT (Insulated Gate Bipolar Transistor) packaging modules are widely used in distributed power generation systems, and the long-term reliability of the insulated gate bipolar transistor packaging module is very important.

[0003] If the insulated gate bipolar transistor packaging module fails, it may affect the safe operation of the power system, thereby affecting the daily work and life of the user end. Considering the industrial application scenario, the insulated gate bipolar transistor packaging module may be subjected to electrical, thermal stress impact and occasional factors for a long time, thereby causing its aging or transient failure; the internal factor causing failure may be because the internal ceramic layer cracks. SUMMARY

[0004] In view of the above problems, a directly bonded copper substrate, an insulated gate bipolar transistor packaging module, a preparation process of the directly bonded copper substrate and a preparation process of the insulated gate bipolar transistor packaging module are provided to overcome the above problems or at least partially solve the above problems, comprising:

[0005] A directly bonded copper substrate, the directly bonded copper substrate comprises:

[0006] A first copper cladding layer;

[0007] A ceramic layer connected to one side of the first copper cladding layer, the ceramic layer is added with a toughening substance;

[0008] A second copper cladding layer connected to the other side of the ceramic layer.

[0009] Optionally, the toughening substance is any one of the following:

[0010] Zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, whiskers, nano-alumina particles.

[0011] Optionally, the other side of the ceramic layer is provided with a chamfer.

[0012] Optionally, the second copper cladding layer is composed of copper and nickel.

[0013] The embodiment of the present application also provides a preparation process of the direct bonding copper substrate, characterized in that the preparation process comprises the following steps:

[0014] Preparation of the ceramic layer, wherein the ceramic layer is added with a toughening substance;

[0015] Printing of the conductive copper paste on the upper and lower surfaces of the ceramic layer, and sintering to obtain the direct bonding copper substrate.

[0016] Optionally, the toughening substance is any one of the following:

[0017] Zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, whiskers, nano-alumina particles.

[0018] Optionally, the preparation of the ceramic layer comprises:

[0019] Preparation of the ceramic layer by using a target mold, wherein the edge of the target mold is chamfered.

[0020] Optionally, the printing of the conductive copper paste on the upper and lower surfaces of the ceramic layer, and sintering to obtain the direct bonding copper substrate, comprises:

[0021] Printing of the conductive copper paste on the upper and lower surfaces of the ceramic layer, and first sintering to obtain a double-sided copper-clad ceramic layer;

[0022] Coating of a nickel layer on the upper surface of the double-sided copper-clad ceramic layer, and second sintering to obtain the direct bonding copper substrate.

[0023] Optionally, the temperature range of the first sintering is 1300-1400 DEG C.

[0024] Optionally, the temperature of the second sintering is higher than the melting point of copper and lower than the melting point of nickel.

[0025] The embodiment of the present application also provides an insulated gate bipolar transistor packaging module, characterized in that the module comprises:

[0026] A base copper plate;

[0027] A wire copper frame;

[0028] The direct bonding copper substrate as described above, wherein the first copper-clad layer is connected with the base copper plate through a first solder layer, and the second copper-clad layer is connected with the wire copper frame through a second solder layer;

[0029] A chip connected with the wire copper frame through a third solder layer.

[0030] The embodiment of the present application also provides a preparation process of the insulated gate bipolar transistor packaging module, characterized in that the preparation process comprises the following steps:

[0031] welding the first copper-coated layer of the directly bonded copper substrate with the substrate copper plate;

[0032] welding the second copper-coated layer of the directly bonded copper substrate with the wire copper frame;

[0033] welding the chip with the wire copper frame to obtain the insulated gate bipolar transistor packaging module.

[0034] The embodiment of the present application has the following advantages:

[0035] In the embodiment of the present application, the directly bonded copper substrate can include: a first copper-coated layer; a ceramic layer connected with one side of the first copper-coated layer, the ceramic layer being added with toughening substances; and a second copper-coated layer connected with the other side of the ceramic layer. The ceramic layer is toughened by adding the toughening substances to the ceramic layer, so that the problem that the insulated gate bipolar transistor packaging module is disabled due to the cracking of the ceramic layer is avoided. BRIEF DESCRIPTION OF DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the present application, the following will briefly introduce the drawings needed to be used in the description of the present application. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0037] Figure 1 is a structure schematic diagram of a directly bonded copper substrate according to an embodiment of the present application;

[0038] Figure 2 is a structure schematic diagram of an insulated gate bipolar transistor packaging module according to an embodiment of the present application;

[0039] Figure 3 is a schematic diagram of preparing a directly bonded copper substrate according to an embodiment of the present application;

[0040] Figure 4 is a step flow chart of a preparation process of a directly bonded copper substrate according to an embodiment of the present application;

[0041] Figure 5 is a step flow chart of a preparation process of an insulated gate bipolar transistor packaging module according to an embodiment of the present application.

[0042] Explanation of the drawing:

[0043] 1, direct bonding copper substrate, 2, first copper clad layer, 3, ceramic layer, 4, second copper clad layer, 5, base copper plate, 6, lead copper frame, 7, chip, 8, first solder layer, 9, second solder layer, 10, conductive copper paste, 11, copper layer, 12, nickel layer, 13, insulated gate bipolar transistor packaging module. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below in combination with the drawings and specific embodiments. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0045] In order to avoid the failure of the insulated gate bipolar transistor packaging module due to the cracking of the ceramic layer, the embodiment of the present application proposes a new direct bonding copper substrate; in the embodiment of the present application, the ceramic layer can be added with toughening material to toughen the ceramic layer, thereby avoiding the problem of failure of the insulated gate bipolar transistor packaging module due to the cracking of the ceramic layer.

[0046] Specifically, reference can be made to Figure 1 , Figure 2 and Figure 3 , Figure 1 a structure schematic diagram of a direct bonding copper substrate according to an embodiment of the present application is shown, Figure 2 a structure schematic diagram of an insulated gate bipolar transistor packaging module according to an embodiment of the present application is shown, Figure 3 a schematic diagram of preparing a direct bonding copper substrate according to an embodiment of the present application is shown.

[0047] As shown in Figure 1 , the direct bonding copper substrate 1 can include:

[0048] a first copper clad layer 2;

[0049] a ceramic layer 3, one side of which is connected to one side of the first copper clad layer 2, and the ceramic layer 3 is added with a toughening material;

[0050] a second copper clad layer 4, one side of which is connected to the other side of the ceramic layer 3.

[0051] In the embodiment of the present application, the direct bonding copper substrate 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3; wherein the first copper clad layer 2 can be used to connect with the base copper plate 5 for heat dissipation, the second copper clad layer 4 can be used to connect with the lead copper frame 6, and the lead copper frame 6 can be used to connect with the chip 7.

[0052] In practical applications, one side of the first copper clad layer 2 can be connected with the base copper plate 5 by soldering through the first soldering tin layer 8; the other side of the first copper clad layer 2 can be connected with one side of the ceramic layer 3, specifically, the conductive copper paste 10 can be printed on one side of the ceramic layer 3, and then sintering is performed, so that the first copper clad layer 2 and the ceramic layer 3 are connected.

[0053] The other side of the ceramic layer 3 can be connected with one side of the second copper clad layer 4; specifically, the conductive copper paste 10 can be printed on the other side of the ceramic layer 3, and then sintering is performed, so that the second copper clad layer 4 and the ceramic layer 3 are connected.

[0054] In some possible embodiments, in order to avoid the failure of the insulated gate bipolar transistor packaging module due to the cracking of the ceramic layer 3, a toughening substance can be added to the ceramic layer 3 to toughen the ceramic layer 3, so as to avoid the problem that the insulated gate bipolar transistor packaging module fails due to the cracking of the ceramic layer 3.

[0055] In an embodiment of the present application, the toughening substance is any one of the following:

[0056] Zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, whiskers, nano-aluminum oxide particles.

[0057] For example, the direct bonding copper base 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3. Wherein, the zirconium dioxide can be added to the aluminum oxide, and then the ceramic layer 3 is obtained through the powder sintering process (the temperature can be controlled at 1050-1150 ℃). The addition amount of the zirconium dioxide can be in the range of (0, 20%). The toughening mechanism is that when the metastable tetragonal phase ZrO2 ceramic is subjected to external stress, the tetragonal phase ZrO2 particles in it will transform into the isomeric monoclinic ZrO2 phase, and at the same time, 3%-5% volume expansion is generated, the strain is absorbed and the cracks are filled, so as to improve the fracture toughness of the material. At the same time, the volume expansion caused by the phase change generates a compressive stress on the crack, hinders the expansion of the crack, and reduces the stress intensity factor at the crack tip, thereby improving the crack expansion resistance.

[0058] For example, the direct bonding copper base 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3. Wherein, the nitride ceramic particles, such as silicon nitride (Si3N4) or titanium nitride (TiN), can also be added to the aluminum oxide, and then the ceramic layer 3 is obtained through the powder sintering process. The addition of the nitride particles can improve the toughness of the ceramic layer 3 through various mechanisms, including crack deflection, crack bridging and micro-crack toughening. These mechanisms can hinder the expansion of the crack, thereby improving the fracture toughness of the material.

[0059] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this example, ceramic particles of titanium nitride (TiN) or zirconium nitride (ZrN) can be added to the aluminum oxide, and the ceramic layer 3 can be formed by a powder sintering process. The addition of the nitride particles can improve the toughness of the ceramic layer 3 through a variety of mechanisms, including crack deflection, crack bridging, and microcrack toughening. Crack deflection: The nitride particles can change the path of a crack, causing it to deflect, thereby increasing the resistance to crack propagation. Crack bridging: During crack propagation, the nitride particles can form bridges across the crack surface, impeding further crack propagation. Microcrack toughening: Stress concentrations around the nitride particles can cause the formation of microcracks, which can absorb energy, thereby improving the toughness of the material.

[0060] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this example, ceramic particles of silicon carbide (SiC) or titanium carbide (TiC) can be added to the aluminum oxide, and the ceramic layer 3 can be formed by a powder sintering process. The addition of the carbide particles can improve the toughness of the ceramic layer 3 through a variety of mechanisms, including crack deflection, crack bridging, and microcrack toughening. Crack deflection: The carbide particles can change the path of a crack, causing it to deflect, thereby increasing the resistance to crack propagation. Crack bridging: During crack propagation, the carbide particles can form bridges across the crack surface, impeding further crack propagation. Microcrack toughening: Stress concentrations around the carbide particles can cause the formation of microcracks, which can absorb energy, thereby improving the toughness of the material.

[0061] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this example, ceramic particles of titanium carbide (TiC) or tungsten carbide (WC) can be added to the aluminum oxide, and the ceramic layer 3 can be formed by a powder sintering process. The addition of the carbide particles can improve the toughness of the ceramic layer 3 through a variety of mechanisms, including crack deflection, crack bridging, and microcrack toughening. Crack deflection: The carbide particles can change the path of a crack, causing it to deflect, thereby increasing the resistance to crack propagation. Crack bridging: During crack propagation, the carbide particles can form bridges across the crack surface, impeding further crack propagation. Microcrack toughening: Stress concentrations around the carbide particles can cause the formation of microcracks, which can absorb energy, thereby improving the toughness of the material.

[0062] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this case, the ceramic layer 3 can be obtained by adding a toughening fiber, such as a carbon fiber or an aramid fiber (e.g., Kevlar), to alumina and then performing a powder sintering process. The addition of the toughening fiber can improve the toughness of the ceramic layer 3 in a variety of ways, including crack bridging, in which the toughening fiber forms a bridge over a crack surface during crack propagation to impede further crack propagation; energy absorption, in which the toughening fiber absorbs a large amount of energy before breaking to improve the toughness of the material; and stress dispersion, in which the toughening fiber disperses and transmits stress to reduce local stress concentration and improve the crack resistance of the material.

[0063] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this case, the ceramic layer 3 can be obtained by adding a whisker, such as a silicon carbide (SiC) whisker or a zirconium oxide (ZrO2) whisker, to alumina and then performing a powder sintering process. The addition of the whisker can improve the toughness of the ceramic layer 3 in a variety of ways, including crack deflection, in which the whisker changes the propagation path of a crack to increase the resistance to crack propagation; crack bridging, in which the whisker forms a bridge over a crack surface during crack propagation to impede further crack propagation; energy absorption, in which the whisker absorbs a large amount of energy before breaking to improve the toughness of the material; and stress dispersion, in which the whisker disperses and transmits stress to reduce local stress concentration and improve the crack resistance of the material.

[0064] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this case, the ceramic layer 3 can be obtained by adding a nano-alumina particle to alumina and then performing a powder sintering process. The addition of the nano-alumina particle can improve the performance of the ceramic layer 3 in a variety of ways, including grain refinement, in which the nano-particle acts as a grain growth inhibitor to reduce the grain size during sintering and thereby improve the strength and toughness of the material; stress dispersion, in which the nano-particle disperses and transmits stress to reduce local stress concentration and thereby improve the crack resistance of the material; and energy absorption, in which the high specific surface area of the nano-particle increases the defects and interfaces within the material, which absorb energy during crack propagation to improve the toughness of the material.

[0065] In an embodiment of the present application, as shown in FIG. 1, the ceramic layer 3 can include a first ceramic layer 31 and a second ceramic layer 32. The first ceramic layer 31 can be formed of a ceramic material having a first coefficient of thermal expansion, and the second ceramic layer 32 can be formed of a ceramic material having a second coefficient of thermal expansion. The first coefficient of thermal expansion can be greater than the second coefficient of thermal expansion. Figure 1 For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. In this case, the ceramic layer 3 can be obtained by adding a toughening fiber, such as a carbon fiber or an aramid fiber (e.g., Kevlar), to alumina and then performing a powder sintering process. The addition of the toughening fiber can improve the toughness of the ceramic layer 3 in a variety of ways, including crack bridging, in which the toughening fiber forms a bridge over a crack surface during crack propagation to impede further crack propagation; energy absorption, in which the toughening fiber absorbs a large amount of energy before breaking to improve the toughness of the material; and stress dispersion, in which the toughening fiber disperses and transmits stress to reduce local stress concentration and improve the crack resistance of the material.

[0066] In some possible embodiments, the ceramic layer 3 can be prepared by a target mold, so that the other side of the ceramic layer 3 is chamfered; thus, the contact area between the ceramic layer 3 and the second copper clad layer 4 is increased, the problem of edge bonding is improved, and the cracking caused by thermal stress failure is further improved.

[0067] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0068] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0069] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0070] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0071] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0072] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0073] Specifically, the edge of the target mold can be provided with a chamfer; when the ceramic layer 3 is prepared, alumina and toughening substances can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into the target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0074] For example, the direct bonding copper substrate 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3. In this case, the ceramic layer 3 can be obtained by mixing alumina and whiskers to obtain a pre-prepared powder, then injecting the pre-prepared powder into a target mold for pressure casting and molding, and then sintering.

[0075] For example, the direct bonding copper substrate 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3. In this case, the ceramic layer 3 can be obtained by mixing alumina and nano-alumina particles to obtain a pre-prepared powder, then injecting the pre-prepared powder into a target mold for pressure casting and molding, and then sintering.

[0076] In an embodiment of the present application, the second copper clad layer 4 is composed of copper and nickel.

[0077] In some possible embodiments, the second copper clad layer 4 can be composed of copper and nickel; in particular, the second copper clad layer 4 can be an alloy of copper and nickel; by forming an alloy phase with high elasticity and high temperature resistance, the elasticity and hardness of the metal layer (i.e. the second copper clad layer 4) can be increased compared to a pure copper layer.

[0078] In particular, as shown in FIG. 1, the direct bonding copper substrate 1 can include the first copper clad layer 2, the ceramic layer 3 and the second copper clad layer 4. Figure 3 In particular, as shown in FIG. 1, the direct bonding copper substrate 1 can include the first copper clad layer 2, the ceramic layer 3 and the second copper clad layer 4.

[0079] For example, the direct bonding copper substrate 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3. In this case, the first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and zirconia to obtain a pre-prepared powder, then injecting the pre-prepared powder into a target mold for pressure casting and molding, and then sintering.

[0080] For example, the direct bonding copper substrate 1 can include the first copper clad layer 2, the second copper clad layer 4 and the ceramic layer 3. In this case, the first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and nitride ceramic particles to obtain a pre-prepared powder, then injecting the pre-prepared powder into a target mold for pressure casting and molding, and then sintering.

[0081] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. The first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and nitride ceramic particles to obtain a pre-made powder, which is then injected into a target mold for pressure casting and sintering.

[0082] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. The first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and carbide ceramic particles to obtain a pre-made powder, which is then injected into a target mold for pressure casting and sintering.

[0083] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. The first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and carbide ceramic particles to obtain a pre-made powder, which is then injected into a target mold for pressure casting and sintering.

[0084] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. The first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and carbide ceramic particles to obtain a pre-made powder, which is then injected into a target mold for pressure casting and sintering.

[0085] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. The first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and carbide ceramic particles to obtain a pre-made powder, which is then injected into a target mold for pressure casting and sintering.

[0086] For example, the direct bonded copper substrate 1 can include a first copper clad layer 2, a second copper clad layer 4, and a ceramic layer 3. The first copper clad layer 2 can be composed of copper, the second copper clad layer 4 can be composed of copper and nickel, and the ceramic layer 3 can be obtained by mixing alumina and carbide ceramic particles to obtain a pre-made powder, which is then injected into a target mold for pressure casting and sintering.

[0087] In the embodiment of the present application, the directly bonded copper substrate 1 can comprise: a first copper clad layer 2; a ceramic layer 3 connected with one side of the first copper clad layer 2, the ceramic layer 3 being added with toughening substances; and a second copper clad layer 4 connected with the other side of the ceramic layer 3. The ceramic layer 3 is toughened by adding the toughening substances to the ceramic layer 3, thereby avoiding the problem that the insulated gate bipolar transistor packaging module is failed due to the cracking of the ceramic layer 3.

[0088] For the directly bonded copper substrate 1 described above, the embodiment of the present application further provides a preparation process of the directly bonded copper substrate 1. Specifically, the preparation process of the directly bonded copper substrate 1 can refer to Figure 4 , Figure 4 A step flow chart of the preparation process of the directly bonded copper substrate 1 is shown in the embodiment of the present application.

[0089] As shown in Figure 4 , the preparation process of the directly bonded copper substrate can comprise:

[0090] Step 401: preparing a ceramic layer, the ceramic layer being added with toughening substances.

[0091] Step 402: printing conductive copper paste on the upper and lower surfaces of the ceramic layer and performing sintering to obtain the directly bonded copper substrate.

[0092] In some feasible embodiments, the ceramic layer 3 can be prepared first. Specifically, in order to avoid the problem that the insulated gate bipolar transistor packaging module is failed due to the cracking of the ceramic layer 3, the ceramic layer 3 can be toughened by adding the toughening substances to the ceramic layer 3, thereby avoiding the problem that the insulated gate bipolar transistor packaging module is failed due to the cracking of the ceramic layer 3.

[0093] Then, the conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3, and sintering is performed to obtain the directly bonded copper substrate 1.

[0094] In an embodiment of the present application, the toughening substances are any of the following:

[0095] Zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, whiskers, and nano-alumina particles.

[0096] For example, zirconium dioxide can be added to alumina, and then a powder sintering process is performed to obtain the ceramic layer 3. Then, the conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3, and sintering is performed to obtain the directly bonded copper substrate 1.

[0097] Exemplarily, nitride ceramic particles, such as silicon nitride (Si3N4) or titanium nitride (TiN), can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0098] Exemplarily, nitride metal particles, such as titanium nitride (TiN) or zirconium nitride (ZrN), can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0099] Exemplarily, carbide ceramic particles, such as silicon carbide (SiC) or titanium carbide (TiC), can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0100] Exemplarily, carbide metal particles, such as titanium carbide (TiC) or tungsten carbide (WC), can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0101] Exemplarily, ductile fibers, such as carbon fibers or aramid fibers (such as Kevlar), can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0102] Exemplarily, whiskers, such as silicon carbide (SiC) whiskers or zirconium oxide (ZrO2) whiskers, can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0103] Exemplarily, nano-alumina particles can be added into alumina, and then ceramic layer 3 can be obtained by powder sintering process. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3, and sintering can be performed to obtain direct bonding copper substrate 1.

[0104] In an embodiment of the present application, the preparation process of ceramic layer 3 can be realized by the following steps:

[0105] The ceramic layer 3 is prepared using a target mold, and the edge of the target mold has a chamfer.

[0106] In some feasible embodiments, a special target mold can also be used to prepare the ceramic layer 3; specifically, toughening material and alumina can be injected into the special target mold to prepare the ceramic layer 3. The edges of the target mold can be chamfered, so that the other side of the prepared ceramic layer 3 is chamfered, thereby increasing the contact area between the ceramic layer 3 and the second copper clad layer 4, improving edge bonding, and thus improving cracking caused by thermal stress failure.

[0107] For example, alumina and zirconium dioxide can be mixed to obtain a pre-formed powder; then the pre-formed powder is injected into a target mold for die casting and sintering to obtain a ceramic layer 3. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3 and sintered to obtain a directly bonded copper substrate 1.

[0108] For example, alumina and nitride ceramic particles can be mixed to obtain a pre-formed powder; then the pre-formed powder is injected into a target mold for die casting and sintering to obtain ceramic layer 3. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3 and sintered to obtain direct-bonded copper substrate 1.

[0109] For example, alumina and nitride metal particles can be mixed to obtain a pre-formed powder; then the pre-formed powder is injected into a target mold for die casting and sintering to obtain a ceramic layer 3. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3 and sintered to obtain a directly bonded copper substrate 1.

[0110] For example, alumina and carbide ceramic particles can be mixed to obtain a pre-formed powder; then the pre-formed powder is injected into a target mold for die casting and sintering to obtain ceramic layer 3. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of ceramic layer 3 and sintered to obtain direct-bonded copper substrate 1.

[0111] For example, alumina and carbide metal particles can be mixed to obtain a pre-formed powder; then the pre-formed powder is injected into a target mold for die casting and sintering to obtain a ceramic layer 3. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3 and sintered to obtain a directly bonded copper substrate 1.

[0112] For example, alumina and tough fibers can be mixed to obtain a pre-formed powder; then the pre-formed powder is injected into a target mold for die casting and sintering to obtain a ceramic layer 3. Then, conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3 and sintered to obtain a directly bonded copper substrate 1.

[0113] In an example, the alumina and the whisker can be mixed to obtain a pre-prepared powder; the pre-prepared powder can be injected into a target mold for pressure casting and molding, and sintered to obtain the ceramic layer 3. Then, the conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3, and sintered to obtain the direct bonding copper substrate 1.

[0114] In an example, the alumina and the nano-alumina particles can be mixed to obtain a pre-prepared powder; the pre-prepared powder can be injected into a target mold for pressure casting and molding, and sintered to obtain the ceramic layer 3. Then, the conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3, and sintered to obtain the direct bonding copper substrate 1.

[0115] In an embodiment of the present application, the preparation process of the direct bonding copper substrate 1, in which the conductive copper paste 10 is printed on the upper and lower surfaces of the ceramic layer 3 and sintered, can be implemented through the following sub-steps:

[0116] In sub-step 11, the conductive copper paste 10 is printed on the upper and lower surfaces of the ceramic layer 3, and sintered for the first time to obtain a double-sided copper-clad ceramic layer.

[0117] In sub-step 12, a nickel layer 12 is coated on the upper surface of the double-sided copper-clad ceramic layer, and sintered for the second time to obtain the direct bonding copper substrate 1.

[0118] In some possible embodiments, the alumina and the zirconia can be mixed to obtain a pre-prepared powder; the pre-prepared powder can be injected into a target mold for pressure casting and molding, and sintered to obtain the ceramic layer 3. Then, the conductive copper paste 10 can be printed on the upper and lower surfaces of the obtained ceramic layer 3; next, the ceramic layer 3 with the printed conductive copper paste 10 is sintered for the first time to obtain a double-sided copper-clad ceramic layer. The temperature of the first sintering can be controlled within a range of 1300-1400°C. After the first sintering is completed, a nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer (i.e., the surface close to the copper frame 6 of the wire); then, the double-sided copper-clad ceramic layer with the coated nickel layer 12 is sintered for the second time to obtain the direct bonding copper substrate 1. The temperature of the second sintering can be controlled within a range higher than the melting point of copper and lower than the melting point of nickel. The melting point of nickel is higher than that of copper, the melting point of nickel is about 1453°C, and the melting point of copper is about 1083°C. The copper-nickel alloy phase (i.e., the second copper-clad layer 4) with high elasticity and heat resistance can be formed through high-temperature calcination. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0119] Alternatively, alumina and nitride ceramic particles can be mixed to obtain a preformed powder; the preformed powder is then injected into a target mold to be pressure-cast and molded, and sintered to obtain the ceramic layer 3. Then, the upper and lower surfaces of the obtained ceramic layer 3 are printed with the conductive copper paste 10; next, the ceramic layer 3 printed with the conductive copper paste 10 is subjected to first sintering to obtain a double-sided copper-clad ceramic layer. After the first sintering is completed, a nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer coated with the nickel layer 12 is subjected to second sintering to obtain the direct bonding copper substrate 1. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0120] Alternatively, alumina and nitride ceramic particles can be mixed to obtain a preformed powder; the preformed powder is then injected into a target mold to be pressure-cast and molded, and sintered to obtain the ceramic layer 3. Then, the upper and lower surfaces of the obtained ceramic layer 3 are printed with the conductive copper paste 10; next, the ceramic layer 3 printed with the conductive copper paste 10 is subjected to first sintering to obtain a double-sided copper-clad ceramic layer. After the first sintering is completed, a nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer coated with the nickel layer 12 is subjected to second sintering to obtain the direct bonding copper substrate 1. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0121] Alternatively, alumina and nitride ceramic particles can be mixed to obtain a preformed powder; the preformed powder is then injected into a target mold to be pressure-cast and molded, and sintered to obtain the ceramic layer 3. Then, the upper and lower surfaces of the obtained ceramic layer 3 are printed with the conductive copper paste 10; next, the ceramic layer 3 printed with the conductive copper paste 10 is subjected to first sintering to obtain a double-sided copper-clad ceramic layer. After the first sintering is completed, a nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer coated with the nickel layer 12 is subjected to second sintering to obtain the direct bonding copper substrate 1. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0122] Alternatively, the alumina and the carbide metal particles can be mixed to obtain a preformed powder; the preformed powder is then injected into a target mold to be pressure-cast and molded, and sintered to obtain the ceramic layer 3. Then, the conductive copper paste 10 is printed on the upper and lower surfaces of the obtained ceramic layer 3; next, the ceramic layer 3 with the printed conductive copper paste 10 is subjected to first sintering to obtain a double-sided copper-clad ceramic layer. After the first sintering is completed, the nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer with the coated nickel layer 12 is subjected to second sintering to obtain the direct bonding copper substrate 1. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0123] Alternatively, the alumina and the carbide metal particles can be mixed to obtain a preformed powder; the preformed powder is then injected into a target mold to be pressure-cast and molded, and sintered to obtain the ceramic layer 3. Then, the conductive copper paste 10 is printed on the upper and lower surfaces of the obtained ceramic layer 3; next, the ceramic layer 3 with the printed conductive copper paste 10 is subjected to first sintering to obtain a double-sided copper-clad ceramic layer. After the first sintering is completed, the nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer with the coated nickel layer 12 is subjected to second sintering to obtain the direct bonding copper substrate 1. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0124] Alternatively, the alumina and the carbide metal particles can be mixed to obtain a preformed powder; the preformed powder is then injected into a target mold to be pressure-cast and molded, and sintered to obtain the ceramic layer 3. Then, the conductive copper paste 10 is printed on the upper and lower surfaces of the obtained ceramic layer 3; next, the ceramic layer 3 with the printed conductive copper paste 10 is subjected to first sintering to obtain a double-sided copper-clad ceramic layer. After the first sintering is completed, the nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer with the coated nickel layer 12 is subjected to second sintering to obtain the direct bonding copper substrate 1. After the direct bonding copper substrate 1 is obtained, the direct bonding copper substrate 1 can be used to prepare an insulated gate bipolar transistor packaging module.

[0125] For example, alumina and nano-alumina particles can be mixed to obtain a pre-formed powder; this pre-formed powder is then injected into a target mold for die casting and sintering to obtain ceramic layer 3. Conductive copper paste 10 is then printed on the upper and lower surfaces of the obtained ceramic layer 3; next, the ceramic layer 3 with the printed conductive copper paste 10 is sintered for the first time to obtain a double-sided copper-clad ceramic layer. After the first sintering, a nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer coated with the nickel layer 12 is sintered for the second time to obtain a direct-bonded copper substrate 1. After obtaining the direct-bonded copper substrate 1, it can be used to fabricate an insulated-gate bipolar transistor (IGBT) package module.

[0126] In this embodiment of the invention, an insulated gate bipolar transistor (IGBT) package module is also provided, which can be referred to... Figure 2 ; Figure 2 A schematic diagram of an insulated gate bipolar transistor (IGBT) package module according to an embodiment of the present invention is shown.

[0127] like Figure 2 As shown, the insulated gate bipolar transistor package module may include:

[0128] Base copper plate 5;

[0129] 6. Copper frame for conductors;

[0130] As shown in the above direct bonding copper substrate 1, the first copper cladding layer 2 is connected to the base copper plate 5 through the first solder layer 8, and the second copper cladding layer 4 is connected to the conductor copper frame 6 through the second solder layer 9.

[0131] Chip 7 is connected to the copper wire frame 6 via a third solder layer.

[0132] In this embodiment of the invention, the base copper plate 5 typically serves as the heat dissipation substrate for the insulated gate bipolar transistor (IGBT) package module. Its main function is to provide a good heat conduction path, rapidly transferring the heat generated by the chip 7 to the heat sink or external environment to maintain the device temperature within a safe operating range. The base copper plate 5 is usually made of high-purity copper material, and sometimes surface treatments such as silver plating are used to further improve its thermal conductivity.

[0133] The copper wire frame 6 serves as both an electrical connection and mechanical support in the insulated gate bipolar transistor (IGBT) package module. It connects the electrodes of the chip 7 to external circuitry, ensuring efficient current transfer and providing mechanical support to the chip 7, protecting it from external shocks and vibrations. The copper wire frame 6 is typically made of copper, due to its excellent electrical conductivity and mechanical strength. The frame design must consider factors such as current capacity, thermal expansion matching, and mechanical stability.

[0134] The chip 7 is mainly a chip of semiconductor such as IGBT, FRD (Fast Recovery Diode), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), etc.; it is a core component of the insulated gate bipolar transistor packaging module, which is a semiconductor device capable of realizing current control and switching. The chip 7 of IGBT combines the advantages of MOSFET and BJT (Bipolar Junction Transistor), has the characteristics of high input impedance and low on-voltage drop, and is suitable for high-voltage and large-current applications.

[0135] The chip 7 in the insulated gate bipolar transistor packaging module is usually made of silicon material, and its structure includes a gate, an emitter and a collector. The design and manufacturing process of the chip 7 have a decisive influence on its performance, including switching speed, conduction loss, voltage withstand capability and thermal stability, etc.

[0136] In the embodiment of the present application, the insulated gate bipolar transistor packaging module further comprises any one of the direct bonding copper substrates 1 mentioned in the above embodiments; the direct bonding copper substrate 1 can include a first copper cladding layer 2, a second copper cladding layer 4 and a ceramic layer 3.

[0137] The first copper cladding layer 2 of the direct bonding copper substrate 1 can be connected by welding the first solder layer 8 and the substrate copper plate 5; the second copper cladding layer 4 of the direct bonding copper substrate 1 can be connected by welding the second solder layer 9 and one side of the wire copper frame 6.

[0138] The chip 7 can be connected by welding the third solder layer and the other side of the wire copper frame 6.

[0139] In the embodiment of the present application, the ceramic layer 3 in the insulated gate bipolar transistor packaging module is added with a toughening material to toughen the ceramic layer 3, which can avoid the problem of failure of the insulated gate bipolar transistor packaging module due to cracking of the ceramic layer 3.

[0140] Specifically, the toughening material can be any one of the following:

[0141] Zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, tough fibers, whiskers, nano-alumina particles.

[0142] For example, zirconium dioxide can be added to alumina, and then a powder sintering process is used to obtain the ceramic layer 3.

[0143] Exemplarily, nitride ceramic particles, such as silicon nitride (Si3N4) or titanium nitride (TiN), can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0144] Exemplarily, nitride metal particles, such as titanium nitride (TiN) or zirconium nitride (ZrN), can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0145] Exemplarily, carbide ceramic particles, such as silicon carbide (SiC) or titanium carbide (TiC), can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0146] Exemplarily, carbide metal particles, such as titanium carbide (TiC) or tungsten carbide (WC), can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0147] Exemplarily, tough fibers, such as carbon fibers or aramid fibers (such as Kevlar), can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0148] Exemplarily, whiskers, such as silicon carbide (SiC) whiskers or zirconium oxide (ZrO2) whiskers, can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process. Exemplarily, nano-alumina particles can also be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0149] In some possible embodiments, the ceramic layer 3 of the directly bonded copper substrate 1 in the insulated gate bipolar transistor packaging module can be prepared through a target mold, so that the other side of the ceramic layer 3 of the directly bonded copper substrate 1 in the insulated gate bipolar transistor packaging module is chamfered; thereby increasing the contact area of the ceramic layer 3 and the second copper-clad layer 4 in the directly bonded copper substrate 1, improving the problem of edge bonding, and further improving the cracking caused by thermal stress failure.

[0150] Exemplarily, alumina and zirconium dioxide can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting and sintering, thereby obtaining the ceramic layer 3.

[0151] Exemplarily, alumina and nitride ceramic particles can also be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting and sintering, thereby obtaining the ceramic layer 3.

[0152] Exemplarily, alumina and nitride metal particles can also be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting and sintering, thereby obtaining the ceramic layer 3.

[0153] Exemplarily, the alumina and carbide ceramic particles can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0154] Exemplarily, the alumina and carbide metal particles can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0155] Exemplarily, the alumina and tough fibers can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0156] Exemplarily, the alumina and whiskers can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0157] Exemplarily, the alumina and nano-alumina particles can be mixed to obtain a pre-prepared powder; then the pre-prepared powder is injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0158] In some possible embodiments, the second copper cladding layer 4 of the direct bonding copper substrate 1 in the insulated gate bipolar transistor packaging module can be composed of copper and nickel; specifically, the second copper cladding layer 4 can be an alloy of copper and nickel; by forming an alloy phase with high elasticity and high temperature resistance, the elasticity and hardness of the metal layer (i.e., the second copper cladding layer 4) can be increased compared with a pure copper layer.

[0159] The embodiment of the present application also provides a preparation process of the insulated gate bipolar transistor packaging module, which can be referred to Figure 5 ; Figure 5 A step flow chart of the preparation process of the insulated gate bipolar transistor packaging module is shown. As shown in Figure 5 the preparation process of the insulated gate bipolar transistor packaging module can include the following steps:

[0160] Step 501, the first copper cladding layer of the direct bonding copper substrate is welded with the substrate copper plate.

[0161] Step 502, the second copper cladding layer of the direct bonding copper substrate is welded with the wire copper frame.

[0162] Step 503, the chip is welded with the wire copper frame, so as to obtain the insulated gate bipolar transistor packaging module.

[0163] In the embodiment of the present application, a preparation process of the insulated gate bipolar transistor packaging module mentioned in the above embodiments is also provided.

[0164] Specifically, the first copper clad layer 2 of the direct bonding copper base 1 in any of the above embodiments can be first soldered and attached to the base copper plate 5 through the first soldering tin layer 8.

[0165] Then, the second copper clad layer 4 of the direct bonding copper base 1 in any of the above embodiments can be soldered and attached to the wire copper frame 6 through the second soldering tin layer 9.

[0166] Next, the chip 7 can be soldered and attached to the other side of the wire copper frame 6 through the third soldering tin layer.

[0167] In the embodiment of the application, the direct bonding copper base 1 can be prepared first when preparing the insulated gate bipolar transistor packaging module.

[0168] Specifically, in order to avoid the failure of the insulated gate bipolar transistor packaging module due to the cracking of the ceramic layer 3, a toughening material can be added to the ceramic layer 3 to toughen the ceramic layer 3, thereby avoiding the problem of failure of the insulated gate bipolar transistor packaging module due to the cracking of the ceramic layer 3.

[0169] In an embodiment of the application, the toughening material is any of the following:

[0170] Zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, whiskers, and nano-aluminum oxide particles.

[0171] For example, zirconium dioxide can be added to aluminum oxide, and then the ceramic layer 3 can be obtained through a powder sintering process.

[0172] For example, nitride ceramic particles such as silicon nitride (Si3N4) or titanium nitride (TiN) can be added to aluminum oxide, and then the ceramic layer 3 can be obtained through a powder sintering process.

[0173] For example, nitride metal particles such as titanium nitride (TiN) and zirconium nitride (ZrN) can be added to aluminum oxide, and then the ceramic layer 3 can be obtained through a powder sintering process.

[0174] For example, carbide ceramic particles such as silicon carbide (SiC) and titanium carbide (TiC) can be added to aluminum oxide, and then the ceramic layer 3 can be obtained through a powder sintering process.

[0175] For example, carbide metal particles such as titanium carbide (TiC) and tungsten carbide (WC) can be added to aluminum oxide, and then the ceramic layer 3 can be obtained through a powder sintering process.

[0176] Exemplarily, a toughening fiber such as a carbon fiber, an aramid fiber (such as Kevlar), or the like can be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0177] Exemplarily, a whisker such as a silicon carbide (SiC) whisker or a zirconium oxide (ZrO2) whisker can be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0178] Exemplarily, a nano-alumina particle can be added to the alumina, and then a ceramic layer 3 can be obtained through a powder sintering process.

[0179] In an embodiment of the present application, the preparation of the ceramic layer 3 comprises:

[0180] The ceramic layer 3 is prepared using a target mold, and the edge of the target mold is chamfered.

[0181] In some possible embodiments, a special target mold can also be used to prepare the ceramic layer 3; specifically, the toughening material and the alumina can be injected into the special target mold to prepare the ceramic layer 3. The edge of the target mold can be chamfered, so that the other side of the prepared ceramic layer 3 is chamfered, thereby increasing the contact area between the ceramic layer 3 and the second copper clad layer 4, improving the edge bonding problem, and thereby improving the cracking caused by thermal stress failure.

[0182] Exemplarily, the alumina and the zirconium dioxide can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for die casting and sintering, so as to obtain the ceramic layer 3.

[0183] Exemplarily, the alumina and the nitride ceramic particle can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for die casting and sintering, so as to obtain the ceramic layer 3.

[0184] Exemplarily, the alumina and the nitride metal particle can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for die casting and sintering, so as to obtain the ceramic layer 3.

[0185] Exemplarily, the alumina and the carbide ceramic particle can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for die casting and sintering, so as to obtain the ceramic layer 3.

[0186] Exemplarily, the alumina and the carbide metal particle can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for die casting and sintering, so as to obtain the ceramic layer 3.

[0187] Exemplarily, the alumina and the toughening fiber can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0188] Exemplarily, the alumina and the whisker can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0189] Exemplarily, the alumina and the nano-alumina particle can be mixed to obtain a pre-prepared powder; the pre-prepared powder is then injected into a target mold for pressure casting forming and sintering, so as to obtain the ceramic layer 3.

[0190] After the ceramic layer 3 is prepared, the conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3, and then the ceramic layer 3 with the printed conductive copper paste 10 is sintered, so as to obtain the direct bonding copper substrate 1.

[0191] In an embodiment of the present application, the conductive copper paste 10 is printed on the upper and lower surfaces of the ceramic layer 3 and sintered, so as to obtain the direct bonding copper substrate 1, which comprises:

[0192] The conductive copper paste 10 is printed on the upper and lower surfaces of the ceramic layer 3 and sintered for the first time, so as to obtain a double-sided copper-clad ceramic layer.

[0193] The nickel layer 12 is coated on the upper surface of the double-sided copper-clad ceramic layer and sintered for the second time, so as to obtain the direct bonding copper substrate 1.

[0194] In some feasible embodiments, the conductive copper paste 10 can be printed on the upper and lower surfaces of the ceramic layer 3 first; then, the ceramic layer 3 with the printed conductive copper paste 10 is sintered for the first time, so as to obtain a double-sided copper-clad ceramic layer. The temperature of the first sintering can be controlled in the range of 1300-1400°C.

[0195] After the first sintering is completed, the nickel layer 12 can be coated on the upper surface of the double-sided copper-clad ceramic layer; then, the double-sided copper-clad ceramic layer with the coated nickel layer 12 is sintered for the second time, so as to obtain the direct bonding copper substrate 1. The temperature of the second sintering can be controlled in the range higher than the melting point of copper and lower than the melting point of nickel. The melting point of nickel is higher than that of copper, the melting point of nickel is about 1453°C, and the melting point of copper is about 1083°C. The copper-nickel alloy phase (i.e., the second copper-clad layer 4) with high elasticity and heat resistance can be formed by high-temperature calcination.

[0196] After the direct bonding copper substrate 1 is obtained, the first copper clad layer 2 of the direct bonding copper substrate 1 can be connected with the substrate copper plate 5 by soldering through the first soldering tin layer 8; the second copper clad layer 4 of the direct bonding copper substrate 1 can be connected with one side of the lead copper frame 6 by soldering through the second soldering tin layer 9; and the chip 7 can be connected with the other side of the lead copper frame 6 by soldering through the third soldering tin layer. Thus, the insulated gate bipolar transistor packaging module is obtained.

[0197] In actual application, when the chip 7 is soldered on the lead copper frame 6, the bonding wire can also be soldered with the lead copper frame 6; and then, the whole is plastic encapsulated.

[0198] Specifically, the whole insulated gate bipolar transistor packaging module can be plastic encapsulated by epoxy resin, the substrate copper plate 5 for heat dissipation can be exposed outside the device, and the pin end of the lead copper frame 6 can also be exposed outside the device; and the rest is located inside the plastic encapsulation body.

[0199] Then, post-curing, pin electroplating tin, and cutting rib forming and mold separation are performed.

[0200] Although the preferred embodiments of the present application have been described, those skilled in the art can make further changes and modifications to the embodiments once they know the basic inventive concept. Therefore, the appended claims are intended to cover all the changes and modifications falling within the scope of the embodiments of the present application.

[0201] Although the preferred embodiments of the present application have been described, those skilled in the art can make further changes and modifications to the embodiments once they know the basic inventive concept. Therefore, the appended claims are intended to cover all the changes and modifications falling within the scope of the embodiments of the present application.

[0202] Finally, it should be noted that, in this document, the terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "contain" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or terminal device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or terminal device. Without more limitation, the element defined by the statement "comprising a" does not exclude the presence of another identical element in the process, method, article or terminal device including the element.

[0203] The direct bonding copper substrate, the insulated gate bipolar transistor packaging module, the preparation process of the direct bonding copper substrate and the preparation process of the insulated gate bipolar transistor packaging module are described in detail above, the principles and implementation manners of the present application are described by using specific examples in the present application, the above example is only used to help understand the method of the present application and its core idea; at the same time, for the general technical personnel in the art, according to the idea of the present application, the specific implementation manner and application range will be changed, and the above description should not be understood as the limitation of the present application.

Claims

1. A directly bonded copper substrate, characterized by, The directly bonded copper substrate comprises: a first copper clad layer; a ceramic layer connected to one side of the first copper clad layer, the ceramic layer being added with a toughening substance; a second copper clad layer connected to the other side of the ceramic layer, the other side of the ceramic layer being provided with a chamfered corner for increasing the contact area of the ceramic layer and the second copper clad layer to improve edge bonding, the second copper clad layer being obtained by printing conductive copper paste on the other side of the ceramic layer, and then performing first sintering, and then coating a nickel layer on the upper surface of the obtained double-sided copper clad ceramic layer, and then performing second sintering, the first sintering temperature being 1300-1400 DEG C, the second sintering temperature being 1083-1453 DEG C, and the second copper clad layer being a copper-nickel alloy phase; the toughening substance being any one of the following: zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, and nano-alumina particles.

2. A process for the preparation of a directly bonded copper substrate, characterized in that, The preparation process comprises: preparing a ceramic layer using a target mold, the target mold having a chamfered corner at the edge, the ceramic layer being added with a toughening substance, and the chamfered corner being used to increase the contact area of the ceramic layer and the second copper clad layer to improve edge bonding, the second copper clad layer being a copper-nickel alloy phase; printing conductive copper paste on the upper and lower surfaces of the ceramic layer, and then performing first sintering to obtain a double-sided copper clad ceramic layer; coating a nickel layer on the upper surface of the double-sided copper clad ceramic layer, and then performing second sintering to obtain the directly bonded copper substrate, the first sintering temperature being 1300-1400 DEG C, and the second sintering temperature being 1083-1453 DEG C; the toughening substance being any one of the following: zirconium dioxide, nitride ceramic particles, nitride metal particles, carbide ceramic particles, carbide metal particles, toughening fibers, and nano-alumina particles.

3. The manufacturing process of claim 2, wherein, The second sintering temperature is higher than the melting point of copper and lower than the melting point of nickel.

4. An insulated gate bipolar transistor package module, characterized by The directly bonded copper substrate comprises: a substrate copper plate; a lead copper frame; the directly bonded copper substrate of claim 1, the first copper clad layer being connected to the substrate copper plate through a first solder layer, and the second copper clad layer being connected to the lead copper frame through a second solder layer; a chip connected to the lead copper frame through a third solder layer.

5. A process for fabricating an insulated gate bipolar transistor package module, characterized by The preparation process comprises: soldering the first copper clad layer of the directly bonded copper substrate of claim 1 to the substrate copper plate; soldering the second copper clad layer of the directly bonded copper substrate to the lead copper frame; soldering a chip to the lead copper frame to obtain the insulated gate bipolar transistor packaging module.

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