Integrated semiconductor laser based on beam angle control and preparation method thereof

Abstract

The present invention relates to the field of semiconductor laser technology, and in particular to an integrated semiconductor laser based on beam angle control and a preparation method thereof, wherein the integrated semiconductor laser comprises an edge emitting laser array, wherein the light output ends of each edge emitting laser form a space, wherein a beam angle control structure is prepared in the space, wherein the beam angle control structure comprises a deformable material layer and a reflective film prepared on the surface of the deformable material layer, and by controlling the deformation amount of the deformable material layer, the reflection angle of the reflective film to the output laser of each edge emitting laser is adjusted. The present invention prepares a beam angle control structure and an edge emitting laser array that outputs a multi-wavelength beam based on the same substrate, and while realizing two-dimensional integration of the edge emitting laser, uses the beam angle control structure to change the propagation direction of the multi-wavelength beam and control the angle of the multi-wavelength beam, thereby achieving the purpose of taking into account both the adjustable direction of the two-dimensional integrated beam and the high-power single-mode multi-wavelength output.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor lasers, and in particular relates to an integrated semiconductor laser based on beam angle control and a preparation method thereof. Background Art

[0002] With the development of the information society, long-distance communications, industrial laser cutting, laser radar, laser rangefinder, optical scanner, face recognition, car automatic driving and even medical technology have put forward new requirements for the characteristics of semiconductor lasers such as light output direction, wavelength requirements, packaging complexity, beam quality, and integration. In general, the application field of laser output angle control is very wide, covering optical communication, optical processing, optical measurement, biomedicine and other fields. Due to the large divergence angle of the beam output by the traditional edge-emitting laser, the coupling efficiency is low, and it is difficult to integrate multiple edge-emitting lasers and their related functions into a two-dimensional microstructure or chip, making the development of multi-wavelength single-chip output integration a technical difficulty. Although the traditional vertical cavity surface emitting laser is easier to achieve two-dimensional integration, it is not suitable for high-power applications. How to balance the easy two-dimensional integration of beam direction control and high-power single-mode multi-wavelength output has become a research hotspot at home and abroad. Summary of the invention

[0003] In view of this, the present invention aims to provide an integrated semiconductor laser based on beam angle control and a preparation method thereof, so as to solve the technical problem that existing color photovoltaic cells are difficult to achieve wide color gamut and large range wavelength control.

[0004] To achieve the above object, the technical solution created by the present invention is implemented as follows:

[0005] An integrated semiconductor laser based on beam angle control comprises an edge emitting laser array. The light output ends of the edge emitting lasers form a space in which a beam angle control structure is prepared. The beam angle control structure comprises a deformable material layer and a reflective film prepared on the surface of the deformable material layer. By controlling the deformation amount of the deformable material layer, the reflection angle of the reflective film to the output laser of each edge emitting laser is adjusted.

[0006] Furthermore, the deformable material layer is a truncated cone structure or a prism structure.

[0007] Furthermore, the deformation material layer adopts a thermosensitive material or an electrosensitive material.

[0008] Furthermore, the thermosensitive material is polyurethane or polyvinyl alcohol, and the electrosensitive material is polyvinyl alcohol, sodium polyacrylate or polyamide.

[0009] Furthermore, the edge emitting laser array is arranged in at least one layer. When the edge emitting laser array is arranged in two layers or more, the edge emitting lasers in each layer share a substrate, and an insulating layer is prepared between the upper and lower layers of edge emitting lasers.

[0010] Furthermore, each edge emitting laser is an edge emitting single-mode laser and has a different output wavelength.

[0011] Furthermore, an N-type electrode for each edge-emitting laser in this layer is prepared on the lower surface of each substrate layer, and an N-type confinement layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type confinement layer and a P-type electrode for each edge-emitting laser in this layer are prepared in sequence on the upper surface of each substrate layer.

[0012] Furthermore, when the edge emitting laser array is arranged in one layer, a beam focusing structure is prepared on the top surface of the deformable material layer; when the edge emitting laser array is arranged in two layers or more, a beam focusing structure is prepared on the top surface of the deformable material layer located on the top layer.

[0013] Furthermore, the light beam converging structure is a microlens.

[0014] Furthermore, when the edge emitting laser array is arranged in one layer, the deformable material layer is deposited on the substrate, and the side and top surfaces of the deformable material layer are evaporated to form a reflective film; when the edge emitting laser array is arranged in two layers or more, the deformable material layers of each layer are superimposed and deposited on the substrate located in the bottom layer, and the reflective film is evaporated on the side and top surface of the deformable material layer located in the top layer, and the reflective film is evaporated on the side surfaces of the deformable material layers located in the remaining layers.

[0015] A method for preparing an integrated semiconductor laser based on beam angle control, for preparing the above-mentioned integrated semiconductor laser based on beam angle control, comprises the following steps:

[0016] S1: preparing an edge emitting laser array on a substrate, wherein the light emitting ends of each edge emitting laser form a space;

[0017] S2: depositing a deformable material in a space surrounded by the edge emitting laser array on the substrate to form a deformable material layer;

[0018] S3: vapor-depositing a metal material on the surface of the deformable material layer to form a reflective film, wherein the reflective film and the deformable material layer constitute a beam angle control structure.

[0019] Furthermore, when the edge emitting laser array is a stack of two or more layers, the edge emitting lasers and beam angle control structures of each layer are prepared sequentially from bottom to top, and an insulating medium is deposited between the upper and lower layers of edge emitting lasers to form an insulating layer.

[0020] Furthermore, when preparing each layer of the beam angle control structure from bottom to top, the dielectric material is filled in the gap between each edge-emitting laser and the beam angle control structure of each layer to form a filling layer flush with the beam angle control structure, and the beam angle control structure located on the upper layer is prepared on the filling layer located on the lower layer.

[0021] Furthermore, a reflective film is evaporated on the side surface and the top surface of the deformable material layer located in the top layer, and a reflective film is evaporated on the side surface of the deformable material layers located in the remaining layers.

[0022] Furthermore, when the edge emitting laser array has one layer, photoresist is spin-coated on the surface of the filling layer, the photoresist is etched to form a cylindrical photoresist, the cylindrical photoresist is heated to a molten state, so that the cylindrical photoresist melts into a spherical dome shape, and a high-reflectivity dielectric film is deposited on the surface of the spherical dome-shaped photoresist to form a microlens; when the edge emitting laser array has two or more layers, a microlens is prepared on the surface of the filling layer located at the top layer.

[0023] Compared with the prior art, the invention can achieve the following beneficial effects:

[0024] (1) The present invention prepares a beam angle control structure and an edge-emitting laser array that outputs multi-wavelength beams based on the same substrate. While realizing two-dimensional integration of the edge-emitting lasers, the beam angle control structure is used to change the propagation direction of the multi-wavelength beams and control the angle of the multi-wavelength beams, thereby achieving the purpose of taking into account two-dimensional integration, controllable beam direction and high-power single-mode multi-wavelength output.

[0025] (2) The microlens prepared above the beam angle control structure and the reflective film in the horizontal direction form a plano-concave cavity, which can affect the output characteristics of the laser and improve the overall performance of the laser.

[0026] (3) Multi-layered edge-emitting lasers can increase output power and achieve high-power output. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments and descriptions of the present invention are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:

[0028] Figure 1 is a top view of the integrated semiconductor laser based on beam angle control according to the first embodiment of the invention;

[0029] Figure 2 is a side view of the integrated semiconductor laser based on beam angle control according to the first embodiment of the invention;

[0030] Figure 3 is a top view of an integrated semiconductor laser based on beam angle control according to Example 2 of the present invention;

[0031] Figure 4 is a side view of an integrated semiconductor laser based on beam angle control according to the second embodiment of the present invention;

[0032] Figure 5 is a side view of an integrated semiconductor laser based on beam angle control according to Example 3 of the present invention;

[0033] Figure 6 It is a side view of an integrated semiconductor laser based on beam angle control as described in Example 4 of the present invention.

[0034] Description of reference numerals:

[0035] Embodiment 1: edge emitting laser 1a, substrate 11a, N-type confinement layer 12a, N-type waveguide layer 13a, active layer 14a, P-type waveguide layer 15a, P-type confinement layer 16a, P-type electrode 17a, N-type electrode 18a, beam angle control structure 2a, deformation material layer 21a, reflective film 22a;

[0036] Embodiment 2: edge emitting laser 1b, beam angle control structure 2b, deformable material layer 21b, reflective film 22b, beam converging structure 3b, filling layer 23b;

[0037] Example 3: Insulating layer 1c. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0039] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0040] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0041] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0042] The present invention will be described in detail below with reference to the drawings and in combination with embodiments.

[0043] Example 1

[0044] like Figure 1 and Figure 2As shown, the present invention creates an integrated semiconductor laser based on beam angle control in embodiment 1, including an edge emitting laser array composed of multiple edge emitting lasers 1a, each edge emitting laser 1a is arranged in a layer and the light emitting end surrounds a space, and a beam angle control structure 2a is prepared in the space, and the beam angle control structure includes a deformable material layer 21a and a reflective film 22a prepared on the surface of the deformable material layer 21a, the deformable material of the deformable material layer 21a can be a thermosensitive material sensitive to temperature such as polyurethane and polyvinyl alcohol, and the physical form can be changed under temperature changes, the deformable material of the deformable material layer 21a can also be an electrosensitive material sensitive to current such as polyvinyl alcohol, sodium polyacrylate, polyamide, etc., and the physical form can be changed under current changes, when the applied temperature or the injected current changes, the deformable material layer 21a is deformed, and the deformation amount of the deformable material layer 21a is controlled by adjusting the temperature or current, thereby adjusting the inclination angle of the reflective film 22a, and then adjusting the reflection angle of the reflective film 22a to the laser output by each edge emitting laser 1a.

[0045] Each edge-emitting laser 1a is an edge-emitting single-mode laser and the output wavelengths of each edge-emitting laser 1a are the same or different. When different wavelengths are output, the angle control of multi-wavelength lasers can be achieved. The present invention can prepare edge-emitting single-mode lasers of different wavelengths by designing material systems and parameters, including but not limited to GaAs, GaN, InP and other material systems. Of course, the present invention can also use edge-emitting lasers that output corresponding mode lasers according to actual application requirements.

[0046] Each edge emitting laser 1a shares a substrate 11a. An N-type confinement layer 12a, an N-type waveguide layer 13a, an active layer 14a, a P-type waveguide layer 15a, a P-type confinement layer 16a, and a P-type electrode 17a of each edge emitting laser 1a are prepared in sequence on the upper surface of the substrate 11a. An N-type electrode 18a of each edge emitting laser 1a is prepared on the lower surface of the substrate 11a.

[0047] When preparing the epitaxial structure of the laser on the substrate 11a, the position of the beam angle control structure 2a is reserved in advance. After completing the preparation of each edge-emitting laser 1a, a deformable material is deposited at the reserved position on the substrate 11a to form a deformable material layer 21a. The deformable material layer 21a is then etched into a truncated cone structure or a prism structure through an etching process, so that the side of the deformable material layer 21a is an inclined surface, and a metal material is evaporated on the side of the deformable material layer 21a to form a reflective film 22a, or a metal material is evaporated on the side and top of the deformable material layer 21a to form a reflective film 22a. The reflective film 22a can change the original light emitting direction of the edge-emitting laser 1a, so that the laser is emitted in a vertical direction of approximately 90°.

[0048] When the deformable material of the deformable material layer 21a is a thermosensitive material, a semiconductor cooler (Thermoelectric Cooler) can be set below the edge emitting laser array, and the substrate 11a is placed on the hot end of the semiconductor cooler. The temperature of the deformable material layer 21a is adjusted by controlling the heat released by the hot end of the semiconductor cooler.

[0049] Embodiment 1 of the present invention also provides a method for preparing an integrated semiconductor laser based on beam angle control, comprising the following steps:

[0050] S1: Prepare an edge emitting laser array on a substrate, wherein the light emitting ends of each edge emitting laser form a space.

[0051] The space enclosed by each edge-emitting laser is the location reserved for preparing the beam angle control structure. For example, multiple layers of AlGaAs with different components are grown on a GaAs substrate by metal organic chemical vapor deposition (MOCVD) to form an N-type confinement layer and an N-type waveguide layer, and then a quantum well active layer is grown on the N-type waveguide layer, and multiple layers of AlGaAs with different components are grown on the quantum well active layer to form a P-type waveguide layer and a P-type confinement layer. Ti / Pt / Au metal is evaporated on the P-type confinement layer to form a P-type electrode, and finally the GaAs substrate is thinned and polished, and Ni / AuGe / Pt / Au metal materials are deposited to form an N-type electrode. Compared with pure gold electrodes, the P-type electrode and the N-type electrode use mixed metal electrodes, which have the following advantages:

[0052] 1) Improved conductivity: In some cases, the conductivity of mixed metals can be better than that of a single metal, especially in composite materials, which can provide better electron conduction paths.

[0053] 2) Reduced cost: By using a combination of low-cost or rare metals, mixed metal electrodes can reduce the need for the use of precious metals while maintaining good performance, thereby reducing overall manufacturing costs.

[0054] 3) Improved stability: Mixed metal electrodes exhibit better corrosion resistance and stability in many applications, especially in extreme environments (such as high temperature, high pH, ​​etc.).

[0055] 4) Tuning performance: By combining different metals, the performance of the electrode can be precisely tuned to meet the needs of specific applications, such as optimizing reaction selectivity or current density.

[0056] S2: Depositing a deformable material in the space enclosed by the edge emitting laser array on the substrate to form a deformable material layer.

[0057] A plurality of layers of deformable material are deposited at the reserved positions on the substrate to form a deformable material layer, and then the deformable material layer is etched into a truncated cone structure or a prism structure through an etching process, so that the side surface of the deformable material layer 21a is an inclined surface.

[0058] S3: vapor-depositing a metal material on the surface of the deformable material layer to form a reflective film, wherein the reflective film and the deformable material layer constitute a beam angle control structure.

[0059] A metal material is evaporated on the side of the deformed material layer of the truncated cone structure or the prism structure to form a reflective film, or a metal material is evaporated on the side and the top of the deformed material layer of the truncated cone structure or the prism structure to form a reflective film.

[0060] The present invention integrates edge-emitting lasers of different structures by controlling the thickness, composition and structure of the growing material in a partitioned growth manner to achieve multifunctional output. In addition, each edge-emitting laser has an independent electrode and can be powered separately. Each edge-emitting laser can work independently, and the number of edge-emitting lasers can be increased or decreased according to the actual application requirements of the light beam, ultimately achieving the purpose of outputting light beams of different wavelengths and the same mode, outputting light beams of different wavelengths and different modes, and outputting light beams of different directions.

[0061] Example 2

[0062] like Figure 3 and Figure 4 As shown, the difference between the integrated semiconductor laser based on beam angle control provided by Example 2 of the present invention and Example 1 is that a beam converging structure 3b is additionally provided above the beam angle control structure 2b, and the beam converging structure 3b uses a structure such as a microlens to converge the beam. For Example 2, a reflective film 22b must be prepared on the side and top surface of the deformable material layer 21b, and a plano-concave cavity is formed between the reflective film 22b prepared on the top surface of the deformable material layer 21b and the microlens. The plano-concave cavity has the following main functions:

[0063] 1) Optical resonance: The plano-concave cavity can form a good optical resonant cavity and promote the generation of lasers. When the photons in the excitation medium are reflected in the cavity and experience gain, the light intensity in the cavity is enhanced, thus forming a stable laser output.

[0064] 2) Mode selection: A plano-concave cavity can support a variety of laser modes, but a specific mode is usually selected to optimize the output characteristics. The curvature radius design of the concave mirror affects the mode distribution of the cavity, so different mode selections can be achieved by changing the geometry of the mirror.

[0065] 3) Beam deflection and focusing: The curvature of the concave mirror allows the light beam in the cavity to converge after reflection, thereby achieving the focusing and divergence control of the light beam. This has an important impact on the quality and propagation characteristics of the laser beam.

[0066] 4) Mirror coating effect: The two mirrors in the plano-concave cavity are usually coated with reflective coatings, which are used for the optimal gain of the gain medium and the coupling of the laser output, respectively, which can effectively improve the utilization rate of the light in the cavity.

[0067] 5) Stability and tuning: The design of the flat-concave cavity can provide good locking mode and stability. The cavity length can be adjusted during the tuning process, thereby changing the wavelength of the laser output.

[0068] In summary, the plano-concave cavity designed in the present invention can affect the output characteristics of the laser and improve the overall performance of the laser.

[0069] The preparation process of the beam converging structure 3b is as follows:

[0070] The gaps between each edge-emitting laser 1b and the beam angle control structure 2b are filled with dielectric materials such as BCB and epoxy resin until they are flush with the upper surface of the beam angle control structure 2b, thereby forming a filling layer 23b. Photoresist is spin-coated on the surface of the filling layer 23b, and the photoresist is etched to form a cylindrical shape. The cylindrical photoresist is heated to a molten state so that the cylindrical photoresist is melted into a spherical dome shape, and a high-reflectivity dielectric film is deposited on the surface of the spherical dome-shaped photoresist to form a microlens.

[0071] Example 3

[0072] like Figure 5 As shown, the integrated semiconductor laser based on beam angle control provided by Example 3 of the present invention is different from that of Example 1 in that the edge emitting laser array is arranged into two or more layers, the edge emitting lasers in each layer share a substrate, and an insulating layer 1c is prepared between the upper and lower layers of edge emitting lasers.

[0073] Each layer of deformable material is deposited on the substrate at the bottom layer in sequence, and a reflective film is evaporated on the side and top surface of the deformable material layer at the top layer, and a reflective film is evaporated on the side of the deformable material layer at the remaining layers. The inclination angles of the side surfaces of each layer of the deformable material layer can be the same or different. And the film system of the reflective film of each layer corresponds to the output wavelength of the edge emitting laser of the layer.

[0074] When preparing the integrated semiconductor laser of Example 3, the bottom edge emitting laser is used as the first layer. The first layer of edge emitting laser is prepared first, and then an insulating material is deposited on the surface of the P-type electrode of the first layer of edge emitting laser to form an insulating layer 1c. Then, a second layer of edge emitting laser is generated on the insulating layer 1c until the preparation of the top edge emitting laser is completed.

[0075] When preparing a stacked edge-emitting laser, a position for a beam angle control structure is reserved in advance. After the preparation of all edge-emitting lasers is completed, a deformable material layer is first generated on the substrate of the first layer of edge-emitting lasers, and then the deformable material layer is etched, and then a reflective film is evaporated on the side of the etched deformable material layer to complete the preparation of the first layer of beam angle control structure, and then a dielectric material is filled into the etched gap until the gap is filled, and then a second layer of beam angle control structure is prepared above the first layer of beam angle control structure until the preparation of the top layer of beam angle control structure is completed. When preparing the top layer of beam angle control structure, a reflective film is evaporated on the top surface of the top layer of deformable material layer.

[0076] The stacked edge-emitting laser array can increase the output power and achieve high-power, multi-angle output.

[0077] Example 4

[0078] like Figure 6 As shown, the difference between the integrated semiconductor laser based on beam angle control provided in Example 4 and Example 3 is that a beam focusing structure is added on the basis of the stacked edge emitting laser array, and the beam focusing structure is prepared above the topmost beam angle control structure. The preparation process refers to Example 2.

[0079] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0080] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An integrated semiconductor laser based on beam angle control, characterized in that: It comprises an edge emitting laser array, wherein the light emitting ends of each edge emitting laser form a space, in which a beam angle control structure is prepared, and the beam angle control structure comprises a deformable material layer and a reflective film prepared on the surface of the deformable material layer, and the reflection angle of the reflective film to the output laser of each edge emitting laser is adjusted by controlling the deformation amount of the deformable material layer; when the edge emitting laser array is arranged in one layer, a beam converging structure is prepared on the top surface of the deformable material layer; when the edge emitting laser array is arranged in two layers or more, a beam converging structure is prepared on the top surface of the deformable material layer located at the top layer; the deformable material layer is a truncated cone structure or a prism structure, and a flat concave cavity is formed between the reflective film prepared on the top surface of the deformable material layer and the beam converging structure.

2. The integrated semiconductor laser based on beam angle control according to claim 1, characterized in that: The deformation material layer adopts a thermosensitive material or an electrosensitive material.

3. The integrated semiconductor laser based on beam angle control according to claim 2, characterized in that: The heat-sensitive material is polyurethane or polyvinyl alcohol, and the electric-sensitive material is polyvinyl alcohol, sodium polyacrylate or polyamide.

4. The integrated semiconductor laser based on beam angle control according to claim 1, characterized in that: The edge emitting laser array is arranged in at least one layer. When the edge emitting laser array is arranged in two layers or more, the edge emitting lasers in each layer share a substrate, and an insulating layer is prepared between the upper and lower layers of edge emitting lasers.

5. The integrated semiconductor laser based on beam angle control according to claim 4, characterized in that: Each edge emitting laser is an edge emitting single mode laser and has a different output wavelength.

6. The integrated semiconductor laser based on beam angle control according to claim 4 or 5, characterized in that: An N-type electrode of each edge-emitting laser in this layer is prepared on the lower surface of each substrate layer, and an N-type confinement layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type confinement layer and a P-type electrode of each edge-emitting laser in this layer are prepared in sequence on the upper surface of each substrate layer.

7. The integrated semiconductor laser based on beam angle control according to claim 1, characterized in that: The light beam converging structure is a micro lens.

8. The integrated semiconductor laser based on beam angle control according to claim 1 or 7, characterized in that: When the edge emitting laser array is arranged in one layer, the deformable material layer is deposited on the substrate, and the side and top surfaces of the deformable material layer are evaporated to form a reflective film; when the edge emitting laser array is arranged in two layers or more, the deformable material layers of each layer are superimposed and deposited on the substrate located in the bottom layer, and the reflective film is evaporated on the side and top surface of the deformable material layer located in the top layer, and the reflective film is evaporated on the side surfaces of the deformable material layers located in the remaining layers.

9. A method for preparing an integrated semiconductor laser based on beam angle control, used for preparing the integrated semiconductor laser based on beam angle control according to any one of claims 1 to 8, characterized in that: The steps include: S1: preparing an edge emitting laser array on a substrate, wherein the light emitting ends of each edge emitting laser form a space; S2: depositing a deformable material in a space surrounded by the edge emitting laser array on the substrate to form a deformable material layer; S3: evaporating a metal material on the surface of the deformable material layer to form a reflective film, wherein the reflective film and the deformable material layer constitute a beam angle control structure; When the edge emitting laser array has one layer, dielectric material is filled in the gap between each edge emitting laser and the beam angle control structure to form a filling layer flush with the beam angle control structure, photoresist is spin-coated on the surface of the filling layer, the photoresist is etched to form a cylindrical photoresist, the cylindrical photoresist is heated to a molten state, so that the cylindrical photoresist melts into a spherical dome shape, and a high-reflectivity dielectric film is deposited on the surface of the spherical dome-shaped photoresist to form a microlens; when the edge emitting laser array has two or more layers of stacked layers, a microlens is prepared on the surface of the filling layer located at the top layer.

10. The method for preparing an integrated semiconductor laser based on beam angle control according to claim 9, characterized in that: When the edge emitting laser array is a stack of two or more layers, the edge emitting lasers and beam angle control structures of each layer are prepared sequentially from bottom to top, and an insulating medium is deposited between the upper and lower edge emitting lasers to form an insulating layer.

11. The method for preparing an integrated semiconductor laser based on beam angle control according to claim 10, characterized in that: When preparing each layer of the beam angle control structure from bottom to top, the dielectric material is filled in the gap between each edge-emitting laser and the beam angle control structure of each layer to form a filling layer flush with the beam angle control structure, and the beam angle control structure located on the upper layer is prepared on the filling layer located on the lower layer.

12. The method for preparing an integrated semiconductor laser based on beam angle control according to claim 11, characterized in that: A reflective film is evaporated on the side surface and the top surface of the deformable material layer located in the top layer, and a reflective film is evaporated on the side surface of the deformable material layers located in the remaining layers.

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