Radio frequency switch chip and radio frequency front end module
By designing protection modules and circuits in the RF switch chip, the problem of electrostatic discharge damage to the chip was solved, and the effective release of electrostatic signals and stable power supply were achieved, thereby improving the chip's reliability and leakage protection capability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- RADROCK (SHENZHEN) SEMICONDUCTOR LTD
- Filing Date
- 2024-08-30
- Publication Date
- 2026-06-23
AI Technical Summary
Radio frequency switch chips are susceptible to damage from electrostatic discharge, which can lead to damage to circuits and electronic components and affect normal operation.
An RF switch chip was designed, which includes a protection module and a protection circuit. The protection circuit includes first and second protection branches, capacitors and resistors, which can release positive and negative pulse signals to ground when electrostatic signals occur, preventing electrostatic signals from leaking into the circuit, and stabilize power supply through clamping circuit and decoupling circuit.
This effectively avoids damage to the components and circuits in the RF switch chip caused by electrostatic signals, improves the chip's reliability, prevents leakage, and ensures normal operation.
Smart Images
Figure CN119363083B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency switch chip and a radio frequency front-end module. Background Technology
[0002] Radio frequency (RF) switch chips play a crucial role in RF front-end modules, and their performance, including insertion loss, return loss, isolation, harmonic suppression, and power capacity, significantly impacts the RF front-end module. In related technologies, RF switch chips are susceptible to electrostatic discharge (ESD) damage, which can harm the circuitry and electronic components within the RF switch chip, thereby affecting its normal operation. Therefore, protecting the circuitry and electronic components of RF switch chips from ESD damage is a pressing technical problem that needs to be solved. Summary of the Invention
[0003] This application proposes an RF switch chip and an RF front-end module.
[0004] In a first aspect, embodiments of this application provide a radio frequency switch chip, including: a protection module, the protection module including an input port and an output port, wherein when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to the switching circuit in the radio frequency switch chip; the protection module includes a protection circuit, the first end of the protection circuit being connected to the input port, and the second end of the protection circuit being grounded, wherein when the protection module is in a non-working state, the protection circuit is configured to release the electrostatic signal of the input port to ground.
[0005] The protection circuit includes a first protection branch, the first end of which is connected to the input port, the second end of which is grounded, the on-state voltage of which is greater than the voltage of the first signal, and the first protection branch is configured to release the positive pulse signal in the electrostatic signal to ground.
[0006] The protection circuit also includes a second protection branch. The first end of the second protection branch is connected to the input port, and the second end of the second protection branch is grounded. The second protection branch is configured to release the negative pulse signal in the electrostatic signal to ground.
[0007] The first protection branch includes M first diodes connected in series. The anode of the first diode at the beginning of the M first diodes is connected to the input port, and the cathode of the last diode at the end of the M first diodes is grounded. M is a positive integer. The second protection branch includes N second diodes connected in series. The cathode of the first diode at the beginning of the N second diodes is connected to the input port, and the anode of the last diode at the end of the N second diodes is grounded. N is a positive integer less than M.
[0008] The protection circuit also includes a first capacitor and a first resistor; the first end of the first resistor is connected to the input port, the second end of the first resistor is connected to the first end of the first capacitor, the second end of the first capacitor is grounded, and the common terminal of the first resistor and the first capacitor is connected to the output port.
[0009] The protection module also includes a clamping circuit. The first end of the clamping circuit is connected to the power supply terminal, and the second end of the clamping circuit and the second end of the protection circuit are grounded together.
[0010] When the protection module is in a non-operating state, the grounding terminal of the protection circuit is left floating, the power supply terminal is grounded, and the protection circuit is configured to transmit the electrostatic signal through the clamping circuit to the power supply terminal, and the power supply terminal releases the electrostatic signal.
[0011] When the protection module is in operation, the power supply terminal supplies power to the protection circuit through the clamping circuit.
[0012] The clamping circuit includes a second resistor, a second capacitor, an inverter, and an NMOS transistor. The first terminal of the second capacitor is grounded, and the second terminal of the second capacitor is connected to the first terminal of the second resistor. The second terminal of the second resistor is connected to the power supply terminal and the drain of the NMOS transistor. The common terminal of the second capacitor and the second resistor is connected to the input terminal of the inverter. The output terminal of the inverter is connected to the gate of the NMOS transistor. The source of the NMOS transistor is grounded.
[0013] The protection module also includes a first decoupling circuit. One end of the first decoupling circuit is connected to the power supply terminal, and the other end of the first decoupling circuit is grounded. The first decoupling circuit is located between the clamping circuit and the protection circuit and is positioned close to the clamping circuit.
[0014] The protection module also includes a second decoupling circuit and a third decoupling circuit; one end of the second decoupling circuit is connected to the input port, and the other end of the second decoupling circuit is grounded; the second decoupling capacitor is located between the clamping circuit and the protection circuit and is close to the protection circuit; one end of the third decoupling circuit is connected to the power supply terminal, and the other end of the third decoupling circuit is grounded; the third decoupling circuit is located on the side of the protection circuit away from the clamping circuit.
[0015] The first decoupling circuit includes at least one first MOS capacitor, the gate of each first MOS capacitor is connected to the power supply terminal, and the source and drain of each first MOS capacitor are connected and then grounded; or / and the second decoupling circuit includes at least one set of second MOS capacitor units, each set of second MOS capacitor units includes a second MOS capacitor and a third MOS capacitor, the gate of the second MOS capacitor is grounded, the source and drain of the second MOS capacitor are connected and then connected to the gate of the third MOS capacitor, the gate of the third MOS capacitor is connected to the input port, and the source and drain of the third MOS capacitor are connected and then grounded; or / and the third decoupling circuit includes at least one set of third MOS capacitor units, each set of third MOS capacitor units includes a fourth MOS capacitor and a fifth MOS capacitor, the gate of the fourth MOS capacitor is grounded, the source and drain of the fourth MOS capacitor are connected and then grounded, the gate of the fifth MOS capacitor is connected to the power supply terminal, and the source and drain of the fifth MOS capacitor are connected and then grounded.
[0016] The RF switch chip also includes a level conversion circuit. The first terminal of the level conversion circuit is connected to the power supply terminal, the second terminal of the level conversion circuit is grounded, the third terminal of the level conversion circuit is connected to the output port, and the fourth terminal of the level conversion circuit is connected to the drive circuit in the RF switch chip. The level conversion circuit is configured to convert the level of the second signal into a level suitable for input to the decoding drive circuit in the RF switch chip.
[0017] The RF switch chip also includes an oscillation circuit. The first terminal of the oscillation circuit is connected to the power supply terminal, the second terminal of the oscillation circuit is grounded, the third terminal of the oscillation circuit is configured to receive an enable signal, and the fourth terminal of the oscillation circuit is configured to output a clock signal. The oscillation circuit is configured to convert DC signals into AC signals.
[0018] The RF switch chip also includes a charge pump. The first end of the charge pump is connected to the power supply terminal, the second end of the charge pump is grounded, the third end of the charge pump is configured to receive a clock signal, and the fourth end of the charge pump is connected to the negative pressure detection circuit in the RF switch chip. The charge pump is configured to generate negative pressure.
[0019] The RF switch chip also includes a negative pressure detection circuit. The first terminal of the negative pressure detection circuit is connected to the power supply terminal, the second terminal of the negative pressure detection circuit is grounded, the third terminal of the negative pressure detection circuit is configured to receive an enable signal, the fourth terminal of the negative pressure detection circuit is connected to the charge pump in the RF switch chip, and the fifth terminal of the negative pressure detection circuit is connected to the decoding drive circuit in the RF switch chip. The negative pressure detection circuit is configured to prevent negative pressure lockup.
[0020] The RF switch chip also includes a decoding drive circuit. The first terminal of the decoding drive circuit is connected to the power supply terminal, the second terminal of the decoding drive circuit is grounded, the third terminal of the decoding drive circuit is connected to the level conversion circuit in the RF switch chip, the fourth terminal of the decoding drive circuit is connected to the negative voltage detection circuit in the RF switch chip, the fifth terminal of the decoding drive circuit is connected to the charge pump in the RF switch chip, and the sixth terminal of the decoding drive circuit is connected to the switching circuit in the RF switch chip. The decoding drive circuit is configured to drive the switching circuit in the RF switch chip.
[0021] Secondly, embodiments of this application provide a radio frequency switch chip, including: a protection module, the protection module including an input port and an output port, wherein when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to the switching circuit in the radio frequency switch chip; the protection module includes a protection circuit, a first terminal of the protection circuit being connected to the input port, a second terminal of the protection circuit being grounded, and the protection circuit including a first protection branch and a second protection branch connected in parallel; the first protection branch includes M first diodes connected in series, the anode of the first diode of the M first diodes being connected to the input port, and the cathode of the last diode of the M first diodes being grounded, where M is a positive integer, and the forward voltage of the first protection branch is greater than the voltage of the first signal; the second protection branch includes N second diodes connected in series, the cathode of the first diode of the N second diodes being connected to the input port, and the anode of the last diode of the N second diodes being grounded, where N is a positive integer less than M.
[0022] When the protection module is in a non-operating state, the first protection branch is configured to release the positive pulse signal in the electrostatic signal of the input port to ground, and the second protection branch is configured to release the negative pulse signal in the electrostatic signal of the input port to ground.
[0023] Thirdly, embodiments of this application provide a radio frequency front-end module, including the radio frequency switch chip as described in the first or second aspect.
[0024] Compared to the RF switch chips provided by related technologies, the RF switch chip provided in this application embodiment has a protection circuit in the protection module. There is no direct connection between the input port of the protection circuit and the power supply. When the protection module is in an inactive state, if there is an electrostatic signal at the input port of the protection module, the electrostatic signal can be released to ground through the protection circuit. When in an active state, there is no need to consider the order of power-on of the input port and the power supply. There is no low-impedance path between the input port of the protection circuit and the power supply. Therefore, no leakage will occur between the input port of the protection circuit and the power supply. Even if the input port of the protection circuit is powered on before the power supply, no leakage will occur. This not only avoids damage to the components and circuits in the RF switch chip caused by electrostatic signals, but also avoids leakage between the input port of the protection circuit and the power supply, thereby improving the reliability of the RF switch chip. Attached Figure Description
[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0026] Figure 1 This is a circuit structure diagram of a radio frequency switch chip provided in one embodiment of this application.
[0027] Figure 2 This is a circuit diagram of a protection module provided in another embodiment of this application.
[0028] Figure 3 This is a circuit diagram of a protection module provided in another embodiment of this application.
[0029] Figure 4 This is a circuit structure diagram of a radio frequency switch chip provided in another embodiment of this application.
[0030] Figure 5 This is a schematic diagram of a level conversion circuit provided in one embodiment of this application.
[0031] Figure 6 This is a schematic diagram of an oscillation circuit provided in one embodiment of this application.
[0032] Figure 7 This is a schematic diagram of a charge pump provided in one embodiment of this application.
[0033] Figure 8 This is a schematic diagram of a negative pressure detection circuit provided in one embodiment of this application.
[0034] Figure 9This is a schematic diagram of a decoding driver circuit provided in one embodiment of this application.
[0035] Figure 10 This is a circuit structure diagram of a radio frequency switch chip provided in another embodiment of this application.
[0036] Figure 11 This is a schematic diagram of a radio frequency front-end module provided in one embodiment of this application. Detailed Implementation
[0037] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0038] To enable those skilled in the art to better understand the solutions of this application, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0039] Please refer to Figure 1 This diagram illustrates the circuit structure of an RF switch chip 100 according to one embodiment of this application. The RF switch chip 100 is used in an RF front-end module, and its main function is to realize functions such as switching, selecting, distributing, and protecting RF signals.
[0040] In this embodiment, the radio frequency switch chip 100 includes a protection module 10, which is configured to control the switching state of the switching circuit in the radio frequency switch chip 100 and to realize communication and data exchange with other modules.
[0041] The protection module 10 includes an input port 110 and an output port 120. Input port 110 is the enable port in the RF switch chip 100, used to control the on / off state of the switching circuits in the RF switch chip 100. The number of input ports 110 can be determined based on the number of switching circuits included in the switch chip 100. For example, if the switching circuits in the RF switch chip 100 include three switching branches, the protection module 10 includes two input ports 110, namely PA_C0 and PA_C1. When the input signal to input port 110 is 01, 10, or 11, it indicates that the first, second, and third switching branches in the RF switch chip 100 are turned on, respectively. When the input signal to input port 110 is 00, it indicates that all switching branches included in the switching circuits of the RF switch chip 100 are turned off. Output port 120 is used to output the signal processed by the protection module 10. In some embodiments, the number of output ports 120 is equal to the number of input ports 110. The signal input from input port 110 is processed and then output from output port 120 to the switching circuit to control the switching circuit's on and off states. As an example, output port 120 outputs a first control signal to control the switching circuit's on state and a second control signal to control the switching circuit's off state.
[0042] Specifically, in this embodiment, when the protection module 10 is in operation, the input port 110 is configured to receive a first signal, and the output port 120 is configured to output a second signal to the switching circuit in the RF switch chip 10. In practical applications, the first signal input to the input port 110 and the second signal output to the output port 120 are essentially the same signal.
[0043] The protection module 10 includes a protection circuit 130. A first terminal 1310 of the protection circuit 130 is connected to the input port 110, and a second terminal 1320 is grounded. When the protection module 10 is in a non-operating state, the protection circuit 130 is configured to release the electrostatic discharge (ESD) signal from the input port 110 to ground. When the protection module 10 is in a non-operating state, the power supply terminal in the RF switch chip 100 is not powered on. When an ESD signal exists at the input port 110, the protection circuit 130 can release the ESD signal to ground. Furthermore, when in the operating state, the power-on sequence of the input port and the power supply is not considered. There is no low-impedance path between the input port of the protection circuit and the power supply, therefore, no leakage current occurs between the input port of the protection circuit and the power supply. Even if the input port of the protection circuit is powered on before the power supply, no leakage current will occur. This not only prevents ESD signals from damaging the components and circuits in the RF switch chip but also prevents leakage current between the input port of the protection circuit and the power supply, thereby improving the reliability of the RF switch chip.
[0044] The RF switch chip 100 provided in this application embodiment has a protection module 10 with a protection circuit 130. The protection circuit 130 is connected between the input port 110 and the output port 120 of the protection module 10. When the protection module 10 is in the working state, the power-on sequence of the input port and the power supply does not need to be considered. There is no low-impedance path between the input port of the protection circuit and the power supply. Therefore, when the protection module 10 is in the working state, there will be no leakage between the input port of the protection circuit and the power supply. When the protection module 10 is in the non-working state, if there is an electrostatic signal at the input port 110, the protection circuit 130 can release the electrostatic signal to ground, so as to avoid damage to the components and circuits in the RF switch chip by the electrostatic signal.
[0045] The following is combined Figure 2 The circuit structure of protection circuit 130 is described below.
[0046] In some embodiments, the protection circuit 130 includes a first protection branch 1310. A first terminal of the first protection branch 1310 is connected to the input port 110, and a second terminal of the first protection branch 1310 is grounded. The forward voltage of the first protection branch 1310 is greater than the voltage of the first signal. Thus, when the protection module 10 is in operation, the first signal will not be released to ground via the first protection branch 1310, ensuring the normal operation of the protection module 10.
[0047] The first protection branch 1310 is configured to release the positive pulse signal in the electrostatic discharge (ESD) signal to ground. When the protection module 10 is in a non-operating state, an ESD signal may exist at the input port 110. When the ESD signal accumulates to a certain level, the positive pulse signal it includes exceeds the conduction voltage of the first protection branch 1310. At this time, the first protection branch 1310 is turned on, and the positive pulse signal in the ESD signal is released to ground through the first protection branch 1310, thereby preventing the positive pulse signal in the ESD signal from damaging the components and circuits in the RF switch chip.
[0048] Optionally, the first protection branch 1310 includes M first diodes 1311 connected in series. The anode of the first diode in the M first diodes 1311 is connected to the input port 110, and the cathode of the last diode in the M first diodes 1311 is grounded. M is a positive integer.
[0049] The number of M can be determined based on the voltage of the first signal and the forward voltage of the first diode 1311. Specifically, the voltage of the first signal should be less than the product of the forward voltage of the first diode 1311 and M. For example, if the voltage of the first signal is 1.8V and the forward voltage of the first diode 1311 is 0.7V, then M is greater than or equal to 3. Specifically, in this embodiment, M equals 3, that is, the first protection branch 1310 includes three first diodes 1311 connected in series.
[0050] In some embodiments, the protection circuit 130 further includes a second protection branch 1320. A first end of the second protection branch 1320 is connected to the input port 110, and a second end of the second protection branch 1320 is grounded. The second protection branch 1320 is configured to release the negative pulse signal in the electrostatic discharge (ESD) signal to ground. When the protection module 10 is in a non-operating state, an ESD signal may exist at the input port 110. When the ESD signal accumulates to a certain level, the negative pulse signal it includes exceeds the conduction voltage of the second protection branch 1320. At this time, the second protection branch 1320 is turned on, and the negative pulse signal in the ESD signal is released to ground via the second protection branch 1320, thereby preventing the positive pulse signal in the ESD signal from damaging the components and circuits in the RF switch chip.
[0051] Optionally, the second protection branch 1320 includes N second diodes 1321 connected in series. The cathode of the first second diode of the N second diodes 1321 is connected to the input port 110, and the anode of the last second diode of the N second diodes 1321 is grounded. N is a positive integer less than M. When M is 3, the value of N can be 1 or 2. Specifically, in this embodiment, the second protection branch 1320 includes one second diode 1321.
[0052] In some embodiments, the protection circuit 130 further includes a first capacitor 1330 and a first resistor 1340. The first capacitor 1330 is configured to perform decoupling. The first resistor 1330 is configured to prevent electrostatic discharge (ESD) charge leakage into the switching circuit of the RF switch chip 100. A first terminal of the first resistor 1340 is connected to the input port 110, a second terminal of the first resistor 1340 is connected to the first terminal of the first capacitor 1330, the second terminal of the first capacitor 1330 is grounded, and the common terminal of the first resistor 1340 and the first capacitor 1330 is connected to the output port 120.
[0053] In summary, the protection circuit 130 included in the protection module 10 of the RF switch chip 100 provided in this application embodiment includes a first protection branch 1310 and a second protection branch 1320. The first protection branch 1310 can release the positive pulse signal in the electrostatic discharge (ESD) signal to ground, and the second protection branch 1320 can release the negative pulse signal in the ESD signal to ground, thereby preventing the ESD signal from leaking into other circuits of the RF switch chip 100 and preventing damage to the components and circuits in the RF switch chip, thus achieving protection for the components and circuits in the RF switch chip. Furthermore, the forward voltage of the first protection branch 1310 is greater than the voltage of the first signal. Therefore, when the protection module 10 is in operation, the first signal will not be released to ground through the first protection branch 1310, thereby ensuring the normal operation of the protection module 10. In addition, the protection circuit 130 also includes a first capacitor 1330, which can achieve decoupling. Furthermore, the protection circuit 130 also includes a first resistor 1340, which can prevent ESD charge leakage into the switching circuit of the RF switch chip 100.
[0054] Please refer to Figure 3 The protection module 10 also includes a clamping circuit 140, which is used to adjust the voltage output of the power supply terminal 20 to ensure the safe and stable operation of the RF switch chip 100.
[0055] The first terminal of the clamping circuit 140 is connected to the power supply terminal 20, and the second terminal of the clamping circuit 140 is grounded together with the second terminal 1320 of the protection circuit 130. When the protection module 10 is in a non-operating state, the ground terminal of the protection circuit 130 is left floating, and the power supply terminal 20 is grounded. The protection circuit 130 is configured to transmit an electrostatic signal to the power supply terminal 20 through the clamping circuit 140, and the power supply terminal 20 releases the electrostatic signal. The clamping circuit 140 can adjust the voltage of the electrostatic signal, which can prevent the power supply terminal 20 from being damaged by excessive voltage.
[0056] When the protection module 10 is in operation, the power supply terminal 20 supplies power to the protection circuit 130 through the clamping circuit 140. The clamping circuit 140 can adjust the output voltage of the power supply terminal 20, thereby achieving a stable power supply to the protection circuit 130.
[0057] Optionally, the clamping circuit 140 includes a second resistor 1410, a second capacitor 1420, an inverter 1430, and an NMOS transistor 1440. The first terminal of the second capacitor 1420 is grounded, and the second terminal of the second capacitor 1420 is connected to the first terminal of the second resistor 1410. The second terminal of the second resistor 1420 is connected to the power supply terminal 20 and the drain of the NMOS transistor 1440. The common terminal of the second capacitor 1420 and the second resistor 1410 is connected to the input terminal of the inverter 1430. The output terminal of the inverter 1430 is connected to the gate of the NMOS transistor 1440. The source of the NMOS transistor 1440 is grounded. Due to the transient characteristics of the capacitor, when an electrostatic signal is applied to the clamping circuit 140, the voltage across the second capacitor 1420 cannot change abruptly. Therefore, during the charging process of the second capacitor 1420, the clamping circuit 140 releases a large amount of electrostatic charge to ground.
[0058] In summary, the RF switch chip 100 provided in this application embodiment includes a protection module 10 with a clamping circuit 140. The second terminal of the clamping circuit 140 and the second terminal 1320 of the protection circuit 130 are grounded together. When the protection module 10 is in a non-working state, the ground terminal of the protection circuit 130 is floating, and the power supply terminal 20 is grounded. At this time, the protection circuit 130 can transmit the electrostatic signal to the power supply terminal 20 through the clamping circuit 140, so that the power supply terminal 20 releases the electrostatic signal. During this process, the clamping circuit 140 can adjust the voltage of the electrostatic signal to prevent the voltage of the electrostatic signal from being too large and damaging the power supply terminal 20. In addition, when the protection module 10 is working, the clamping circuit 140 can adjust the output voltage of the power supply terminal 20, thereby achieving a stable power supply to the protection circuit 130.
[0059] Please refer to this again. Figure 3 The protection module 20 also includes a first decoupling circuit 150. One end of the first decoupling circuit 150 is connected to the power supply terminal 20, and the other end of the first decoupling circuit 150 is grounded. The first decoupling circuit 150 is located between the clamping circuit 140 and the protection circuit 130 and is positioned close to the clamping circuit 140. In this way, the first decoupling circuit 150 can remove high-frequency noise and fluctuations on the power line near the clamping circuit 140.
[0060] Optionally, the first decoupling circuit 150 includes at least one first MOS capacitor 1510. The gate of each first MOS capacitor 1510 is connected to the power supply terminal 20, and the source and drain of each first MOS capacitor 1550 are connected and then grounded. The number of first MOS capacitors can be determined based on the high-frequency noise on the power line near the clamping circuit 140. Specifically, in this embodiment, the first decoupling circuit 150 includes three first MOS capacitors 1510. The first MOS capacitors 1510 can absorb and release charge, thereby removing high-frequency noise on the power line near the clamping circuit 140, thereby stabilizing the voltage on the power line near the clamping circuit 140.
[0061] Please refer to this again. Figure 3 The protection module 20 also includes a second decoupling circuit 160 and a third decoupling circuit 170.
[0062] One end of the second decoupling circuit 160 is connected to the input port 110, and the other end of the second decoupling circuit 160 is grounded. The second decoupling circuit 160 is located between the clamping circuit 140 and the protection circuit 130 and is positioned close to the protection circuit 130. In this way, the second decoupling circuit 160 can remove high-frequency noise and fluctuations on the power line near the protection circuit 130.
[0063] Optionally, the second decoupling circuit 160 includes at least one set of second MOS capacitor units 1610. Each set of second MOS capacitor units 1610 includes a second MOS capacitor 1611 and a third MOS capacitor 1612. The gate of the second MOS capacitor 1611 is grounded. The source and drain of the second MOS capacitor 1612 are connected and then connected to the gate of the third MOS capacitor 1612. The gate of the third MOS capacitor 1612 is connected to the input port, and the source and drain of the third MOS capacitor 1612 are connected and then grounded. The number of second MOS capacitor units 1610 can be determined according to the high-frequency noise on the power line near the protection circuit 130. Specifically, in this embodiment, the second decoupling circuit 160 includes three sets of second MOS capacitor units 1610. The second MOS capacitor units 1610 can absorb and release charge, thereby removing high-frequency noise on the power line near the protection circuit 130, thereby stabilizing the voltage on the power line near the protection circuit 130.
[0064] One end of the third decoupling circuit 170 is connected to the power supply terminal 20, and the other end of the third decoupling circuit 170 is grounded. The third decoupling circuit 170 is located on the side of the protection circuit 130 away from the clamping circuit 140. In this way, the third decoupling circuit 170 can remove high-frequency noise and fluctuations on the power line on the side of the protection circuit 130 away from the clamping circuit 140.
[0065] Optionally, the third decoupling circuit 170 includes at least one set of third MOS capacitor units 1710. Each set of third MOS capacitor units 1710 includes a fourth MOS capacitor 1711 and a fifth MOS capacitor 1712. The gate of the fourth MOS capacitor 1711 is grounded, and the source and drain of the fourth MOS capacitor 1711 are connected and then grounded. The gate of the fifth MOS capacitor 1712 is connected to the power supply terminal 20, and the source and drain of the fifth MOS capacitor 1712 are connected and then grounded. The number of third MOS capacitor units 1710 can be determined according to the high-frequency noise on the power line of the protection circuit 130 away from the clamping circuit 140. Specifically, in this embodiment, the third decoupling circuit 170 includes three sets of third MOS capacitor units 1710. The third MOS capacitor units 1710 can absorb and release charge, thereby removing high-frequency noise on the power line of the protection circuit 130 away from the clamping circuit 140, thereby stabilizing the voltage on the power line of the protection circuit 130 away from the clamping circuit 140.
[0066] In summary, the RF switch chip 100 provided in this application embodiment is further provided with a first decoupling circuit 150, a second decoupling circuit 160 and a third decoupling circuit 170 in the protection module 10, which can remove high-frequency noise and fluctuations on the power lines of the RF switch chip 100.
[0067] Please refer to Figure 4 This illustrates a circuit structure diagram of another radio frequency switch chip 100 provided in an embodiment of this application. Figure 4 In this embodiment, the radio frequency switch chip 100 includes a protection module 10, a power supply terminal 20, a level conversion circuit 30, an oscillation circuit 40, a charge pump 50, a negative voltage detection circuit 60, a decoding drive circuit 70, and a switch circuit 80.
[0068] The protection module 10 is connected to the power supply terminal 20. The protection module 10 includes an input port 110, an output port 120, and a protection circuit 130. The level conversion circuit 30 is connected to the output port 120, the power supply terminal 20, and the decoding drive module 70, respectively. The oscillation circuit 40 is connected to the power supply terminal 20. The charge pump 50 is connected to the power supply terminal 20, the negative pressure detection circuit 60, and the decoding drive circuit 70, respectively. The negative pressure detection circuit 60 is connected to the power supply terminal 20, the charge pump 50, and the decoding drive circuit 70, respectively. The decoding drive circuit 70 is connected to the power supply terminal 20, the level conversion circuit 30, the charge pump 50, the negative pressure detection circuit 60, and the switching circuit 80, respectively. The specific connection methods between the above circuits will be discussed in conjunction with... Figures 5-9 The examples are described below.
[0069] The level conversion circuit 30 is configured to convert the level of the second signal to a level suitable for input to the decoding drive circuit in the RF switch chip 100. For example, the level conversion circuit 30 can convert a 1.8V voltage to a 2.6V voltage.
[0070] Please refer to Figure 5 The first terminal 310 of the level conversion circuit 30 is connected to the power supply terminal 20. The first terminal 310 is the VDD pin, which supplies power to the level conversion circuit 30 through its connection to the power supply terminal 20. The second terminal 320 of the level conversion circuit 30 is grounded. The second terminal 320 is the GND pin, used to connect the internal ground of the level conversion circuit 30 to the ground of an external circuit. The third terminal 330 of the level conversion circuit 30 is connected to the output port 120. The third terminal 330 is an input pin, used to receive the second signal output from the output port 120. The fourth terminal 340 of the level conversion circuit 30 is connected to the decoding driver circuit 70 in the RF switch chip 100. The fourth terminal 340 is an output pin, used to output the level-converted second signal. The level conversion circuit 30 may also include other pins, which are not limited in this embodiment.
[0071] The oscillation circuit 40 is configured to convert a DC signal into a clock signal. In the RF switch chip 100, the oscillation circuit 40 can generate a stable frequency and a specific waveform. The oscillation circuit 40 can be a cross-coupled oscillator or a three-point oscillator.
[0072] Please refer to Figure 6 The first terminal 410 of the oscillation circuit 40 is connected to the power supply terminal 20. Specifically, in this embodiment, the first terminal 410 of the oscillation circuit 40 is a VDD pin, which supplies power to the oscillation circuit 40 by connecting to the power supply terminal 20. The second terminal 420 of the oscillation circuit 40 is grounded. Specifically, in this embodiment, the second terminal 420 of the oscillation circuit 40 is a GND pin, used to connect the internal ground of the oscillation circuit 40 to the ground of the external circuit. The third terminal 430 of the oscillation circuit 40 is connected to the module in the RF switch chip 100 used to send an enable signal, and is used to receive the enable signal. Specifically, in this embodiment, the third terminal 430 of the oscillation circuit 40 is an enable (EN) pin, which is used to control the oscillation circuit 40 to turn on or off. Specifically, when the enable pin receives a specific level signal (e.g., a high level), the oscillation circuit 40 starts working; when the enable pin receives other level signals (e.g., a low level), the oscillation circuit 40 turns off. The fourth terminal 440 of the oscillation circuit 40 is connected to the charge pump 50 in the RF switch chip 100 and is used to output a clock signal to the charge pump 50. Specifically, in this embodiment, the fourth terminal 440 of the oscillation circuit 40 is the CLK_EM pin.
[0073] The charge pump 50 is configured to generate a negative pressure signal. This negative pressure signal is input to the decoding drive circuit 70, which then drives the corresponding switching circuit 80 to turn off based on the signal. Please refer to [reference needed]. Figure 7 The first terminal 510 of the charge pump 50 is connected to the power supply terminal 20. Specifically, in this embodiment, the first terminal 510 of the charge pump 50 is the VDD pin, which is connected to the power supply terminal 20 to supply power to the charge pump 50. The second terminal 520 of the charge pump 50 is grounded. Specifically, in this embodiment, the second terminal 520 of the charge pump 50 is the GND pin, used to connect the internal ground of the charge pump 50 to the ground of the external circuit. The third terminal 530 of the charge pump 50 is connected to the oscillation circuit 40 in the RF switch chip 100, used to receive the clock signal output by the oscillation circuit 40. Specifically, in this embodiment, the third terminal 530 of the charge pump 50 is the CLK_IN pin. The fourth terminal 540 of the charge pump 50 is connected to the negative voltage detection circuit 60 in the RF switch chip 100. Specifically, in this embodiment, the fourth terminal 540 of the charge pump 50 is the VNEG pin, which is used to output negative voltage.
[0074] In some embodiments, the RF switch chip 100 further includes a third capacitor (not shown in the figure), one end of which is grounded and the other end is connected to the fourth terminal 540 of the charge pump 50.
[0075] The negative pressure detection circuit 60 is configured to prevent negative pressure lockup. Please refer to [reference needed]. Figure 8The first terminal 610 of the negative pressure detection circuit 60 is connected to the power supply terminal 20. Specifically, in this embodiment, the first terminal 610 of the negative pressure detection circuit 60 is the VDD pin, which is connected to the power supply terminal 20 to supply power to the negative pressure detection circuit 60. The second terminal 620 of the negative pressure detection circuit 60 is grounded. Specifically, in this embodiment, the second terminal 620 of the negative pressure detection circuit 60 is the GND pin, used to connect the internal ground line of the negative pressure detection circuit 60 to the ground line of the external circuit. The third terminal 630 of the negative pressure detection circuit 60 is connected to the module in the RF switch chip 100 used to send the enable signal, and is used to receive the enable signal. Specifically, in this embodiment, the third terminal 630 of the negative pressure detection circuit 60 is the EN pin, which is used to control the opening or closing of the negative pressure detection circuit 60. Specifically, when the EN pin receives a specific level signal (such as a high level), the negative pressure detection circuit 60 starts to work; when the EN pin receives other level signals (such as a low level), the negative pressure detection circuit 60 is closed. In this embodiment, the oscillation circuit 40 and the negative voltage detection circuit 60 receive the same enable signal. The fourth terminal 640 of the negative voltage detection circuit 60 is connected to the charge pump 50 in the RF switch chip 100. Specifically, in this embodiment, the fourth terminal 640 of the negative voltage detection circuit 60 is the VNEG pin, used to receive the negative voltage signal output by the charge pump 50. The fifth terminal 650 of the negative voltage detection circuit 60 is connected to the decoding drive circuit in the RF switch chip 100. Specifically, in this embodiment, the fifth terminal 650 of the negative voltage detection circuit 60 is the VTL pin, used to output a voltage signal to the decoding drive circuit 70.
[0076] The decoding drive circuit 70 is configured to drive the switching circuit 80 in the RF switch chip 100. Specifically, when the driving voltage received by the decoding drive circuit 70 is a positive voltage signal, it is used to drive the corresponding switching circuit 80 to turn on; when the driving voltage received by the decoding drive circuit 70 is a negative voltage signal, it is used to drive the corresponding switching circuit 80 to turn off.
[0077] Please refer to Figure 9The first terminal 710 of the decoding drive circuit 70 is connected to the power supply terminal 20. Specifically, in this embodiment, the first terminal 710 of the decoding drive circuit 70 is a VDD pin, which is connected to the power supply terminal 20 to supply power to the decoding drive circuit 70. The second terminal 720 of the decoding drive circuit 70 is grounded. Specifically, in this embodiment, the second terminal 620 of the negative voltage detection circuit 60 is a GND pin, used to connect the internal ground line of the decoding drive circuit 70 to the ground line of the external circuit. The third terminal 730 of the decoding drive circuit 70 is connected to the level conversion circuit 30 in the RF switch chip 100. Optionally, the third terminal 730 of the decoding drive circuit 70 includes multiple input pins, and different input pins are used to receive the drive voltage of different switching branches output by the voltage conversion circuit 30. Specifically, in this embodiment, the third terminal 730 of the decoding drive circuit 70 includes three input pins: V1, V2, and V3. Pin V1 receives the drive voltage of the first switching branch, pin V2 receives the drive voltage of the first switching branch, and pin V3 receives the drive voltage of the first switching branch. The fourth terminal 740 of the decoding drive circuit 70 is connected to the negative voltage detection circuit 60 in the RF switch chip 100. Specifically, in this embodiment, the fourth terminal 740 of the decoding drive circuit 70 is the VL pin, used to receive the voltage signal output by the negative voltage detection circuit 60. The fifth terminal 750 of the decoding drive circuit 70 is connected to the charge pump 50 in the RF switch chip 100. Specifically, in this embodiment, the fifth terminal 750 of the decoding drive circuit 70 is the VNEG voltage, used to receive the negative voltage signal output by the charge pump 50. The sixth terminal 760 of the decoding drive circuit 70 is connected to the switching circuit 80 in the RF switch chip 100, used to output a drive signal to the switching circuit 80. Specifically, in this embodiment, the sixth terminal 760 of the decoding driver circuit 70 includes 16 pins, namely VG_SE_RF1 pin, VG_SE_RF2 pin, ..., VG_SE_RF8 pin, VG_SH_RF1 pin, VG_SH_RF2 pin, ..., VG_SH_RF8 pin.
[0078] Please refer to Figure 10 This application also provides an RF switch chip 100. The RF switch chip 100 includes a protection module 10. The protection module 10 includes an input port 110 and an output port 120. When the protection module 10 is in the working state, the input port 110 is configured to receive a first signal, and the output port 120 is configured to output a second signal to the switching circuit in the RF switch chip.
[0079] The protection module 10 includes a protection circuit 130. The first end of the protection circuit 130 is connected to the input port 110, and the second end of the protection circuit 130 is grounded. The protection circuit 130 includes a first protection branch 1310 and a second protection branch 1320 connected in parallel.
[0080] The first protection branch 1310 includes M first diodes 1311 connected in series. The anode of the first diode at the beginning of the M diodes 1311 is connected to the input port 110, and the cathode of the last diode at the end of the M diodes 1311 is grounded. M is a positive integer. The forward voltage of the first protection branch 1310 is greater than the voltage of the first signal. Optionally, when the protection module 10 is in a non-operating state, the first protection branch 1310 is configured to release the positive pulse signal in the electrostatic signal of the input port 110 to ground.
[0081] The second protection branch 1320 includes N second diodes 1321 connected in series. The cathodes of the first second diodes of the N second diodes 1321 are connected to the input port 110, and the anodes of the last second diodes of the N second diodes 1321 are grounded. N is a positive integer less than M. Optionally, when the protection module 10 is in a non-operating state, the second protection branch 1320 is configured to release the negative pulse signal in the electrostatic signal of the input port 110 to ground.
[0082] In summary, the RF switch chip 100 provided in this application embodiment includes a protection circuit 130 with a first protection branch 1310 and a second protection branch 1320. The first protection branch 1310 can release the positive pulse signal in the electrostatic discharge (ESD) signal to ground, and the second protection branch 1320 can release the negative pulse signal in the ESD signal to ground. This prevents the ESD signal from leaking into other circuits of the RF switch chip 100, thus preventing damage to the circuits and components in the RF switch chip 100 and protecting them. Furthermore, the forward voltage of the first protection branch 1310 is greater than the voltage of the first signal. Therefore, when the protection module 10 is in operation, the first signal will not be released to ground through the first protection branch 1310, ensuring the normal operation of the protection module 10.
[0083] Please refer to Figure 11 This illustration shows a radio frequency (RF) front-end module 200 provided in one embodiment of this application. The RF front-end module 200 is a module integrating two or more discrete components such as an RF switch chip 100, a low-noise amplifier, a filter, a duplexer, and a power amplifier. In this embodiment, the RF front-end module 200 may include, for example... Figure 1 , Figure 4 The RF switch chip 100 shown in any one of the embodiments may also include, for example: Figure 10 The radio frequency switch chip 100 shown is shown.
[0084] The RF front-end module 200 provided in this application embodiment includes an RF switch chip 100. The protection module 10 in the RF switch chip 100 is provided with a protection circuit 130. The protection circuit 130 is connected between the input port 110 and the output port 120 of the protection module 10. When it is in working state, the power-on sequence of the input port and the power supply does not need to be considered. There is no low-impedance path between the input port of the protection circuit and the power supply. Therefore, when the protection module 10 is in working state, there will be no leakage between the input port of the protection circuit and the power supply. In addition, when the protection module 10 is in working state and there is an electrostatic signal at the input port 110, the protection circuit 130 can release the electrostatic signal to ground to avoid damage to the components and circuits in the RF switch chip by the electrostatic signal.
[0085] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.
[0086] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0087] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0088] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0089] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
Claims
1. A radio frequency switch chip, characterized in that, include: Switching circuits and protection modules; The protection module includes an input port and an output port. When the protection module is in the working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to the switching circuit in the RF switch chip to control the switching state of the switching circuit. The input port is an enable port in the RF switch chip, used to control the conduction and shutdown of the switching circuit. There is no low-impedance path between the input port and the power supply terminal. The protection module includes a protection circuit. The first end of the protection circuit is connected to the input port, and the second end of the protection circuit is grounded. When the protection module is in a non-operating state, the protection circuit is configured to release the electrostatic signal of the input port to ground.
2. The radio frequency switch chip as described in claim 1, characterized in that, The protection circuit includes a first protection branch, a first end of which is connected to the input port, a second end of which is grounded, a forward voltage of which is greater than the voltage of the first signal, and the first protection branch is configured to release the positive pulse signal in the electrostatic signal to ground.
3. The radio frequency switch chip as described in claim 2, characterized in that, The protection circuit further includes a second protection branch, the first end of which is connected to the input port, and the second end of which is grounded. Place Narrative The second protection branch is configured to release the negative pulse signal in the electrostatic signal to ground.
4. The radio frequency switch chip as described in claim 3, characterized in that, The first protection branch includes M first diodes connected in series. The anode of the first diode at the beginning of the M first diodes is connected to the input port, and the cathode of the last diode at the end of the M first diodes is grounded. M is a positive integer. The second protection branch includes N second diodes connected in series. The cathode of the first second diode of the N second diodes is connected to the input port, and the anode of the last second diode of the N second diodes is grounded. N is a positive integer less than M.
5. The radio frequency switch chip as described in claim 4, characterized in that, The protection circuit further includes a first capacitor and a first resistor; a first end of the first resistor is connected to the input port, a second end of the first resistor is connected to the first end of the first capacitor, a second end of the first capacitor is grounded, and the common terminal of the first resistor and the first capacitor is connected to the output port.
6. The radio frequency switch chip as described in claim 1, characterized in that, The protection module also includes a clamping circuit, the first end of which is connected to the power supply terminal, and the second end of which is grounded together with the second end of the protection circuit.
7. The radio frequency switch chip as described in claim 6, characterized in that, When the protection module is in a non-operating state, the ground terminal of the protection circuit is left floating, the power supply terminal is grounded, and the protection circuit is configured to transmit the electrostatic signal through the clamping circuit to the power supply terminal, and the power supply terminal releases the electrostatic signal.
8. The radio frequency switch chip as described in claim 6, characterized in that, When the protection module is in operation, the power supply terminal supplies power to the protection circuit through the clamping circuit.
9. The radio frequency switch chip as described in claim 6, characterized in that, The clamping circuit includes a second resistor, a second capacitor, an inverter, and an NMOS transistor; The first terminal of the second capacitor is grounded, and the second terminal of the second capacitor is connected to the first terminal of the second resistor; the second terminal of the second resistor is connected to the power supply terminal and the drain of the NMOS transistor; the common terminal of the second capacitor and the second resistor is connected to the input terminal of the inverter; the output terminal of the inverter is connected to the gate of the NMOS transistor; and the source of the NMOS transistor is grounded.
10. The radio frequency switch chip as described in claim 1, characterized in that, The protection module further includes a first decoupling circuit, one end of which is connected to the power supply terminal, and the other end of which is grounded. The first decoupling circuit is located between the clamping circuit and the protection circuit and is positioned close to the clamping circuit.
11. The radio frequency switch chip as described in claim 10, characterized in that, The protection module further includes a second decoupling circuit and a third decoupling circuit; one end of the second decoupling circuit is connected to the input port, and the other end of the second decoupling circuit is grounded; the second decoupling circuit is located between the clamping circuit and the protection circuit and is positioned close to the protection circuit. One end of the third decoupling circuit is connected to the power supply terminal, and the other end of the third decoupling circuit is grounded. The third decoupling circuit is located on the side of the protection circuit away from the clamping circuit.
12. The radio frequency switch chip as described in claim 11, characterized in that, The first decoupling circuit includes at least one first MOS capacitor, the gate of each first MOS capacitor is connected to the power supply terminal, and the source and drain of each first MOS capacitor are connected and then grounded. Or / and, the second decoupling circuit includes at least one set of second MOS capacitor units, each set of second MOS capacitor units includes a second MOS capacitor and a third MOS capacitor, the gate of the second MOS capacitor is grounded, the source and drain of the second MOS capacitor are connected and then connected to the gate of the third MOS capacitor, the gate of the third MOS capacitor is connected to the input port, and the source and drain of the third MOS capacitor are connected and then grounded. Or / and the third decoupling circuit includes at least one set of third MOS capacitor units, each set of third MOS capacitor units includes a fourth MOS capacitor and a fifth MOS capacitor, the gate of the fourth MOS capacitor is grounded, the source and drain of the fourth MOS capacitor are connected and then grounded, the gate of the fifth MOS capacitor is connected to the power supply terminal, and the source and drain of the fifth MOS capacitor are connected and then grounded.
13. The radio frequency switch chip as described in claim 1, characterized in that, The RF switch chip also includes a level conversion circuit. The first terminal of the level conversion circuit is connected to the power supply terminal, the second terminal of the level conversion circuit is grounded, the third terminal of the level conversion circuit is connected to the output port, and the fourth terminal of the level conversion circuit is connected to the drive circuit in the RF switch chip. The level conversion circuit is configured to convert the level of the second signal into a level suitable for input to the decoding drive circuit in the RF switch chip.
14. The radio frequency switch chip as described in claim 1, characterized in that, The radio frequency switch chip also includes an oscillation circuit. The first terminal of the oscillation circuit is connected to the power supply terminal, the second terminal of the oscillation circuit is grounded, the third terminal of the oscillation circuit is configured to receive an enable signal, and the fourth terminal of the oscillation circuit is configured to output a clock signal. The oscillation circuit is configured to convert a DC signal into an AC signal.
15. The radio frequency switch chip as described in claim 1, characterized in that, The RF switch chip also includes a charge pump, the first end of which is connected to the power supply terminal, the second end of which is grounded, the third end of which is configured to receive a clock signal, and the fourth end of which is connected to the negative pressure detection circuit in the RF switch chip; the charge pump is configured to generate negative pressure.
16. The radio frequency switch chip as described in claim 1, characterized in that, The RF switch chip also includes a negative pressure detection circuit. The first terminal of the negative pressure detection circuit is connected to the power supply terminal, the second terminal of the negative pressure detection circuit is grounded, the third terminal of the negative pressure detection circuit is configured to receive an enable signal, the fourth terminal of the negative pressure detection circuit is connected to the charge pump in the RF switch chip, and the fifth terminal of the negative pressure detection circuit is connected to the decoding drive circuit in the RF switch chip. The negative pressure detection circuit is configured to prevent negative pressure lockup.
17. The radio frequency switch chip as described in claim 1, characterized in that, The RF switch chip also includes a decoding drive circuit. The first terminal of the decoding drive circuit is connected to the power supply terminal, the second terminal of the decoding drive circuit is grounded, the third terminal of the decoding drive circuit is connected to the level conversion circuit in the RF switch chip, the fourth terminal of the decoding drive circuit is connected to the negative voltage detection circuit in the RF switch chip, the fifth terminal of the decoding drive circuit is connected to the charge pump in the RF switch chip, and the sixth terminal of the decoding drive circuit is connected to the switching circuit in the RF switch chip. The decoding driver circuit is configured to drive the switching circuit in the radio frequency switch chip.
18. A radio frequency front-end module, characterized in that, Includes the radio frequency switch chip as described in any one of claims 1-17.