A path selection switch, 90-degree terahertz phase shifter and phased array radar

Abstract

This invention discloses a path selection switch, a 90-degree terahertz phase shifter, and a phased array radar, belonging to the fields of communication and radar technology. The path selection switch includes multiple transmission lines, the input ends of which are connected to form a common node, and the output ends of each transmission line are sequentially connected to a transistor and an impedance converter. The substrate of the transistor is grounded through a first resistor, and the control terminal of the transistor is connected to a second resistor. Based on this path selection switch, the 90-degree terahertz phase shifter reduces the variation of parasitic parameters under different phase shift states, reduces the deteriorating effect of parasitic parameter variations on phase shift accuracy, and improves the phase shift accuracy of the terahertz phase shifter. This overcomes the technical bottleneck of high-precision terahertz phase shifters being sensitive to parasitic parameters. At the same time, the 90-degree terahertz phase shifter has the advantages of low insertion loss and wide flatness, and both insertion loss and phase shift accuracy performance are improved.

Description

Technical Field

[0001] This invention relates to the fields of communication and radar technology, specifically to a path selection switch, a 90-degree terahertz phase shifter, and a phased array radar. Background Technology

[0002] Traditional terahertz phase shifters are mainly divided into two architectures: switch-line phase shifters based on PIN (PIN represents the structure type of transistor, P-type semiconductor, intrinsic semiconductor, and N-type semiconductor) Schottky diodes and switch-line phase shifters based on MEMS (Micro-Electro-Mechanical Systems) technology. Terahertz phase shifters play an important role in communication and radar electronic systems. However, the above two types of switch-line phase shifters have problems such as large structural size, large insertion loss, and low integration, which are not conducive to the miniaturization design of communication equipment.

[0003] Furthermore, terahertz phase shifters are core components of radar systems, and their phase shifting accuracy restricts the performance of the radar system. The insertion loss of terahertz phase shifters limits the sensitivity and detection range of the radar system, and the phase shifting accuracy of terahertz phase shifters directly determines key performance indicators such as beam pointing error and sidelobe suppression ratio of the radar system. The phase shifting accuracy of terahertz phase shifters is mainly limited by the parasitic parameters of active devices. When the phase shifting state switches, the parasitic parameters of transistor devices also change, causing the phase shift value to deviate from the ideal phase shift value and deteriorating the phase shifting accuracy. Summary of the Invention

[0004] To address the problems existing in the prior art, the present invention provides a path selection switch, a 90-degree terahertz phase shifter, and a phased array radar. The 90-degree terahertz phase shifter can reduce the changes in parasitic parameters under different phase shift states and improve the phase shifting accuracy of the terahertz phase shifter.

[0005] This invention is achieved through the following technical solution:

[0006] In a first aspect, this application provides a path selection switch, including multiple transmission lines, the input ends of the multiple transmission lines are connected to form a common node, and the output ends of each transmission line are connected to a transistor and an impedance converter;

[0007] The substrate of the transistor is grounded through a first resistor, and the control terminal of the transistor is connected to a second resistor;

[0008] When the control terminal of the transistor is low, the corresponding transmission line is turned on to transmit radio frequency signals.

[0009] Preferably, the transistor is a CMOS transistor, BJT, FET, IGBT, PNP transistor, PIN transistor, or NPN transistor.

[0010] Preferably, the gate of the transistor is the control terminal, the gate is connected to a second resistor, the source is grounded, the substrate is grounded through a first resistor, the drain is connected to the selection node of the transmission line, and the impedance converter is connected to the drain.

[0011] Preferably, the transmission line is wired using a reciprocating folding method.

[0012] Preferably, the transmission line is a coplanar waveguide transmission line, a microstrip line, or a stripline.

[0013] Secondly, this application provides a 90-degree terahertz phase shifter.

[0014] It includes a first-stage phase module and a second-stage phase module connected in series;

[0015] The first-level phase module includes two identical first-path selection switches, which are connected by multiple transmission lines.

[0016] The secondary phase module includes two identical second path selection switches, which are connected by multiple transmission lines.

[0017] The first path selection switch and the second path selection switch are the path selection switches, and the phase selection path of the first path selection switch is smaller than the phase selection path of the second path selection switch.

[0018] Preferably, the two path selection switches in the primary phase module and / or the secondary phase module are connected by a coplanar waveguide transmission line.

[0019] Preferably, the radio frequency signal is input from the first phase module, and after phase shifting, it is output through the second phase module;

[0020] During transmission, radio frequency signals are transmitted along the transmission line corresponding to a low level at the transistor control terminal.

[0021] Preferably, the first path selection switch is a single-pole three-throw switch, and the second path selection switch is a single-pole four-throw switch.

[0022] Thirdly, this application provides a terahertz phased array radar, including the aforementioned 90-degree terahertz phase shifter.

[0023] Compared with the prior art, the present invention has the following beneficial technical effects:

[0024] The path selection switch provided in this application employs parallel transmission line resonant technology. A transistor and an impedance transformer are connected at the output end of the transmission line to reduce insertion loss in the on state of the radio frequency signal. Secondly, adding a resistor between the substrate and ground of the transistor, as well as adding a resistor at the control terminal of the transistor, can improve the isolation performance of the path selection switch and further reduce insertion loss. In addition, setting an impedance transformer at the output end of the transmission line improves the isolation of the transistor in the off state and reduces the insertion loss of the path selection switch.

[0025] This application provides a 90-degree terahertz phase shifter that uses different path selection switches in the two phase modules to reduce the variation of parasitic parameters under different phase shift states, reduce the deteriorating effect of parasitic parameter variations on phase shift accuracy, and improve the phase shift accuracy of the terahertz phase shifter. This breaks through the technical bottleneck of high-precision terahertz phase shifters being sensitive to parasitic parameters. At the same time, it has the advantages of low insertion loss and wide flatness, thus improving both insertion loss and phase shift accuracy performance. Attached Figure Description

[0026] Figure 1 This is a structural diagram of the 90-degree terahertz phase shifter of the present invention;

[0027] Figure 2 This is a structural diagram of the single-pole three-throw switch of the present invention;

[0028] Figure 3 This is a structural diagram of the single-pole four-throw switch of the present invention;

[0029] Figure 4 This is a schematic diagram illustrating the working principle of the 90-degree terahertz phase shifter of this invention.

[0030] Figure 5 This is a graph showing the relative phase shift value and the mean square error of the phase shift in the 90-degree terahertz phase shifter of the present invention.

[0031] Figure 6 This is a diagram showing the insertion loss and insertion loss mean square error of the 90-degree terahertz phase shifter of the present invention. Detailed Implementation

[0032] The present invention will now be described in further detail with reference to the accompanying drawings. These descriptions are intended to explain the invention and not to limit it.

[0033] A path selection switch includes multiple transmission lines, the input ends of the multiple transmission lines are connected to form a common node, and the output ends of each transmission line are sequentially connected to a transistor and an impedance converter.

[0034] The substrate of the transistor is grounded through a first resistor, and the control terminal of the transistor is connected to a second resistor. When the control terminal of the transistor is at a low level, the corresponding transmission line is turned on to transmit radio frequency signals.

[0035] This path selection switch uses the common node as the RF signal input and the selection node of each transmission line as the RF signal output. The path selection switch adopts parallel transmission line resonance technology, which treats the transmission line as an inductor. The inductor and the transistor resonate in a high-impedance state, which allows the RF signal to pass through more effectively in the conducting state, thereby reducing insertion loss. The reduction of insertion loss means that the energy loss of the RF signal during transmission is reduced, thus improving the efficiency and quality of RF signal transmission.

[0036] Meanwhile, as a switching element, the transistor's operating state (on or off) is determined by the control signal. Adding a first resistor between the transistor's substrate and ground, and a second resistor at the transistor's control terminal, serves multiple purposes. On one hand, it helps stabilize the transistor's operating state, preventing malfunctions caused by parasitic effects and noise interference; on the other hand, the resistors suppress the transmission of radio frequency (RF) signals to the control terminal, further optimizing the RF signal transmission performance during switching state transitions. Especially in the transistor's off state, the resonant circuit exhibits a high-impedance state, ensuring the transmission of the RF signal to the output terminal, thereby reducing RF signal attenuation.

[0037] Furthermore, installing an impedance transformer at the selection node of the transmission line is another crucial component. The primary function of the impedance transformer is to match the impedance of the transistor selection node to the impedance level required by subsequent circuitry, thereby reducing RF signal reflections and insertion losses caused by impedance mismatch. This impedance matching design not only improves the isolation of the transistor in the off state but also ensures efficient transmission of RF signals in the on state. By precisely adjusting the parameters of the impedance transformer, the overall performance of the path selection switch can be further optimized to meet the requirements of specific application scenarios.

[0038] This path selection switch achieves low insertion loss and high isolation by employing parallel transmission line resonance technology, adding resistors to the transistor substrate and control terminal, and setting an impedance transformer at the selection node, thus enabling precise control and efficient transmission of RF signals.

[0039] The transmission line is a coplanar waveguide transmission line, microstrip line, or stripline, preferably a coplanar waveguide transmission line. The coplanar waveguide transmission line has a signal trace and a return path conductor. The radio frequency signal trace is located in the center and surrounded by two adjacent external ground planes. This structure makes the coplanar waveguide transmission line have low dispersion and good electromagnetic compatibility at high frequencies, and is suitable for high-speed digital circuits and radio frequency integrated circuits.

[0040] The transmission line is laid out in a reciprocating folding manner to reduce the area of ​​the path selection switch. When applied to communication equipment, this is beneficial for the miniaturization of the communication equipment; for example, the transmission line is arranged in a folded serpentine pattern.

[0041] The transistor is a CMOS (Complementary Metal-Oxide-Semiconductor) transistor, a BJT (Bipolar Junction Transistor), a FET (Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), a PNP transistor, a PIN transistor, or an NPN transistor, preferably a CMOS transistor.

[0042] A PNP transistor consists of three distinct semiconductor regions, and its structure is designated PNP, meaning two P-type semiconductor regions sandwiching one N-type semiconductor region. These three regions are respectively called the emitter (the first P-type region), the base (N-type region), and the collector (the second P-type region).

[0043] In NPN transistors, "NPN" represents the transistor's structural type, namely N-type semiconductor-P-type semiconductor-N-type semiconductor, with the middle layer being P-type semiconductor and the two sides being N-type semiconductor.

[0044] The gate of the CMOS transistor is the control terminal. The gate is connected to a second resistor. The source is grounded. The substrate is grounded through a first resistor. The drain is connected to the selection node of the transmission line. The impedance converter is connected to the drain.

[0045] The path selection switch is a single-pole multi-throw switch, such as a single-pole three-throw switch SP3T, a single-pole four-throw switch SP4T, a single-pole five-throw switch, a single-pole six-throw switch, etc.

[0046] When the path selection switch is working, the control terminal of the transistor controls the conduction state of the path selection switch according to the control signal. When the control terminal of the transistor is low, the corresponding transmission line is turned on, and the other transmission lines are turned off. The radio frequency signal is transmitted and output through the turned transmission line.

[0047] Correspondingly, see Figure 1 This application also provides a 90-degree terahertz phase shifter using the above-mentioned path selection switch, including a first-stage phase module and a second-stage phase module connected in series;

[0048] The first-level phase module includes two identical first-path selection switches, which are connected by multiple transmission lines.

[0049] The secondary phase module includes two identical second path selection switches, which are connected by multiple transmission lines.

[0050] The phase selection path of the first path selection switch is smaller than the phase selection path of the second path selection switch.

[0051] The number of transmission line segments between two path selection switches in the same phase module is matched with the number of selection nodes of the path selection switch. For example, if the number of selection nodes of the path selection switch in the same phase module is N, then the two path selection switches are connected by N transmission line segments.

[0052] The two first-path selection switches are first-path selection switch A and first-path selection switch B, and the two second-path selection switches are second-path selection switch A and second-path selection switch B. The connection method of the first-level phase module and the second-level phase module is described below.

[0053] The common node of the first path selection switch A is used as the RF input port P. IN Multiple selection nodes of the first path selection switch A are connected to multiple selection nodes of the first path selection switch B via multiple transmission lines. The common node of the first path selection switch B is connected to the common node of the second path selection switch A. Multiple selection nodes of the second path selection switch A are connected to multiple selection nodes of the second path selection switch B via multiple transmission lines. The common node of the second path selection switch B serves as the RF signal output port P. OUT .

[0054] The transmission line between the two path selection switches is a coplanar waveguide transmission line, microstrip line, or stripline, preferably a coplanar waveguide transmission line. The transmission line is laid out in a reciprocating folding manner, and the transmission line is arranged in a folded serpentine pattern to reduce the area of ​​the 90-degree terahertz phase shifter, which is beneficial to the miniaturization of the 90-degree terahertz phase shifter.

[0055] Example 1

[0056] A 90-degree terahertz phase shifter includes a first-stage phase module and a second-stage phase module connected in series.

[0057] The first-level phase module includes two single-pole, three-throw (SP3T) switches, each with three phase selection paths. The selection nodes of the two SP3T switches are connected by three coplanar waveguide transmission lines. The second-level phase module includes two single-pole, four-throw (SP4T) switches, each with four phase selection paths. The selection nodes of the two SP4T switches are connected by four coplanar waveguide transmission lines.

[0058] The common node of one SP3T single-pole triple-throw switch is connected to the common node of one SP4T single-pole quadruple-throw switch, and the common node of another SP3T single-pole triple-throw switch serves as the RF signal input terminal P. 31 The common node of another single-pole four-throw switch SP4T serves as the RF signal output terminal P. 41 .

[0059] See Figure 2 The SP3T single-pole three-throw switch has its first phase selection path's selection node connected sequentially to a CMOS transistor M5 and an impedance transformer. The output of the impedance transformer serves as the RF signal output terminal P. 32 The selection node of the second phase selection path is connected sequentially to the CMOS transistor M6 and the impedance transformer. The output terminal of the impedance transformer serves as the RF signal output terminal P. 33 The selection node of the third phase selection path is connected sequentially to the CMOS transistor M7 and the impedance transformer. The output of the impedance transformer serves as the RF signal output terminal P. 34 .

[0060] The gate connection resistor R of the CMOS transistor M5 12 The substrate is grounded through resistor R9; the gate of the CMOS transistor M6 is connected to resistor R. 13 The substrate is connected to resistor R 10 Grounded; the gate connection resistor R of the CMOS transistor M7 11 The substrate is connected to resistor R 14 Grounding.

[0061] See Figure 3 The SP4T single-pole four-throw switch has its first phase selection path's selection node connected sequentially to a CMOS transistor M1 and an impedance transformer. The output of the impedance transformer serves as the RF signal output terminal P. 42 The selection node of the second phase selection path is connected sequentially to the CMOS transistor M2 and the impedance transformer. The output terminal of the impedance transformer serves as the RF signal output terminal P. 43 The selection node of the third phase selection path is connected in sequence to the CMOS transistor M3 and the impedance transformer. The output terminal of the impedance transformer serves as the RF signal output terminal P. 44 The selection node of the fourth phase selection path is connected in sequence to the CMOS transistor M4 and the impedance transformer. The output terminal of the impedance transformer serves as the RF signal output terminal P. 45 .

[0062] The gate of the CMOS transistor M1 is connected to resistor R5, and the substrate is grounded through resistor R1; the gate of the CMOS transistor M2 is connected to resistor R6, and the substrate is grounded through resistor R2; the gate of the CMOS transistor M3 is connected to resistor R7, and the substrate is grounded through resistor R3; the gate of the CMOS transistor M4 is connected to resistor R8, and the substrate is grounded through resistor R4.

[0063] When the aforementioned 90-degree terahertz phase shifter is operating, the transmission path of the radio frequency signal is as follows:

[0064] The control terminal of CMOS transistor M5 in a single-pole three-throw switch is V5, the control terminal of CMOS transistor M6 is V6, and the control terminal of CMOS transistor M7 is V7.

[0065] When control terminal V5 is low and control terminals V6 and V7 are high, the RF signal originates from the RF signal input terminal P. 31 Input and transmission to the radio frequency signal output terminal P 32 ;

[0066] When control terminal V6 is low and control terminals V5 and V7 are high, the RF signal originates from the RF signal input terminal P. 31 Input and transmission to the radio frequency signal output terminal P 33 ;

[0067] When control terminal V7 is low and control terminals V5 and V6 are high, the RF signal originates from the RF signal input terminal P. 31 Input and transmission to the radio frequency signal output terminal P 34 .

[0068] The control terminal of the CMOS transistor M1 in the single-pole four-throw switch is V1, the control terminal of the CMOS transistor M2 is V2, the control terminal of the CMOS transistor M3 is V3, and the control terminal of the CMOS transistor M4 is V4.

[0069] When control terminal V1 is low, and control terminals V2, V3, and V4 are high, the RF signal originates from the RF signal input terminal P. 41 Input and transmission to the radio frequency signal output terminal P 42 ;

[0070] When control terminal V2 is low, and control terminals V1, V3, and V4 are high, the RF signal originates from the RF signal input terminal P. 41 Input and transmission to the radio frequency signal output terminal P 43 ;

[0071] When control terminal V3 is low, and control terminals V1, V2, and V4 are high, the RF signal originates from the RF signal input terminal P. 41Input and transmission to the radio frequency signal output terminal P 44 .

[0072] When control terminal V4 is low, and control terminals V1, V2, and V3 are high, the RF signal originates from the RF signal input terminal P. 41 Input and transmission to the radio frequency signal output terminal P 45 .

[0073] Figure 4 The diagram below illustrates the working principle of a 90-degree terahertz phase shifter. The phase shifting method of the 90-degree terahertz phase shifter is explained below.

[0074] For ease of description, the selection node for each single-pole multi-throw switch is defined as follows:

[0075] The two single-pole three-throw switches of the first-stage phase module are SP3TA and SP3TB.

[0076] The three selection nodes of the SP3TA single-pole three-throw switch are nodes A1, A2, and A3.

[0077] The three selection nodes of the SP3TB single-pole three-throw switch are nodes B1, B2, and B3.

[0078] The two single-pole four-throw switches of the secondary phase module are SP4TA and SP4TB.

[0079] The four selection nodes of the single-pole four-throw switch SP4TA are nodes A4, A5, A6, and A7.

[0080] The four selection nodes of the SP4TB single-pole four-throw switch are nodes B4, B5, B6, and B7.

[0081] The phases of the first-level phase module include 28.125°, 16.875°, and 5.625°; the phases of the second-level phase module include 50.625°, 39.375°, 16.875°, and 5.625°. Phase shifting is achieved by controlling the conduction of nodes in the single-pole three-throw and single-pole four-throw switches. Table 1 shows the relationship between node states and corresponding phase shift values.

[0082] Table 1

[0083]

[0084] The 90-degree terahertz phase shifter of this application controls the phase shift state of the terahertz phase shifter through transistors, achieving a phase shift in steps of 5.625° within a 90° phase shift range. Due to the symmetry of the single-pole three-throw switch SP3T and the single-pole four-throw switch SP4T, the fluctuation of parasitic parameters of the terahertz phase shifter in different states is reduced, thereby effectively improving the phase shift accuracy of the terahertz phase shifter.

[0085] Simulation of the 90-degree terahertz phase shifter was performed. Figure 5 This is a graph showing the relative phase shift value and the mean square error of the phase shift for a 90-degree terahertz phase shifter. Figure 6 The diagram shows the insertion loss and mean square error of the insertion loss for a 90-degree terahertz phase shifter.

[0086] This 90-degree terahertz phase shifter can achieve 5-bit phase shifting within a 90° range in the 192.5-220 GHz frequency range, with a phase shift mean square error of less than 5.625, exhibiting high phase shift accuracy. Simultaneously, the insertion loss mean square error fluctuation is less than 0.5 dB in the 190-220 GHz frequency range. Simulation results demonstrate that the proposed 90-degree terahertz phase shifter reduces the deterioration of phase shift accuracy caused by parasitic parameter changes due to phase shift state variations, effectively improving phase shift accuracy in the Asia-Pacific Hertz band, while also possessing low insertion loss and wide flatness characteristics.

[0087] This 90-degree terahertz phase shifter has the following advantages:

[0088] 1. The 90-degree terahertz phase shifter uses a path selection switch, which employs parallel transmission line resonance technology to achieve resonance between transmission lines when the RF signal is on. This reduces insertion loss when the RF signal is on, thereby reducing the insertion loss of the entire terahertz phase shifter. This not only improves the efficiency of RF signal transmission but also ensures the performance stability of the terahertz phase shifter in the high-frequency terahertz band.

[0089] 2. The two path selection switches are connected by a coplanar waveguide transmission line, which is arranged in a folded manner. This arrangement not only retains the advantages of coplanar waveguide transmission lines—low loss and ease of integration at high frequencies—but also significantly reduces the space occupied by the transmission line through the folded design, thereby achieving miniaturization of the overall size of the terahertz phase shifter. This is undoubtedly a significant advantage for terahertz systems that require highly integrated and compact designs.

[0090] 3. A resistor is added between the transistor substrate of the path selection switch and ground to improve the isolation performance of the substrate, reduce the leakage and reflection of radio frequency signals in the substrate, thereby reducing the insertion loss of the path selection switch and improving the isolation of the switch, thus reducing the insertion loss of the entire terahertz phase shifter and improving the phase shifting accuracy.

[0091] 4. The addition of a resistor to the gate of the transistor in the path selection switch effectively limits the path of the radio frequency signal coupled to the control circuit through the gate, reducing the leakage of the radio frequency signal to the control terminal. This not only improves the isolation performance of the path selection switch but also reduces the insertion loss of the path selection switch, further reducing the overall insertion loss of the terahertz phase shifter and improving the phase shifting accuracy.

[0092] 5. By adding an impedance transformer to the RF output port of the path selection switch, the transistor can provide better isolation when it is off, further reducing insertion loss and improving phase shift accuracy. This design not only improves the overall performance of the terahertz phase shifter, but also enhances its adaptability and reliability in complex application scenarios.

[0093] Example 2

[0094] This application also provides a terahertz phased array radar, including the 90-degree terahertz phase shifter of Embodiment 1.

[0095] Example 3

[0096] This application also provides a communication device, including the 90-degree terahertz phase shifter of Embodiment 1.

[0097] Example 4

[0098] This application also provides an electronic device, including the 90-degree terahertz phase shifter of Embodiment 1.

[0099] This electronic device is a terahertz imaging device. Terahertz waves can penetrate non-metallic materials such as clothing and plastic, thus terahertz imaging technology has great potential in the field of security inspection. As part of the imaging system, the terahertz phase shifter can optimize the phase characteristics of the signal, improve the resolution and clarity of the image, and thus more accurately identify contraband hidden in clothing or packages.

[0100] This electronic device is a biological detection device that uses terahertz spectroscopy to analyze the vibrational modes of biomolecules, enabling high-precision imaging of human tissues and tumor detection. The terahertz phase shifter plays a role in adjusting the signal phase during this process, improving the accuracy and reliability of the detection.

[0101] This electronic device is a terahertz spectral analysis system. The terahertz phase shifter, as part of the spectral analysis system, can optimize the phase characteristics of the signal and improve the accuracy and sensitivity of the spectral analysis.

[0102] This electronic device is an audio device. The terahertz phase shifter mainly functions to adjust the phase of the audio signal, thereby producing specific sound effects or improving audio quality.

[0103] The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A 90-degree terahertz phase shifter, characterized in that, It includes a first-stage phase module and a second-stage phase module connected in series; The first-level phase module includes two identical first-path selection switches, which are connected by multiple transmission lines. The two first-path selection switches of the first-stage phase module are a single-pole three-throw switch SP3TA and a single-pole three-throw switch SP3TB, and the phase shifts of the first-stage phase module are 28.125°, 16.875°, and 5.625°, respectively. The secondary phase module includes two identical second path selection switches, which are connected by multiple transmission lines. The two second-path selection switches of the secondary phase module are single-pole four-throw switch SP4TA and single-pole four-throw switch SP4TB, and the phase shifts of the secondary phase module are 50.625°, 39.375°, 16.875°, and 5.625°, respectively. The path selection switch includes multiple transmission lines, the input ends of which are connected to form a common node, and the output ends of each transmission line are connected to a transistor and an impedance transformer. The substrate of the transistor is grounded through a first resistor, and the control terminal of the transistor is connected to a second resistor; When the control terminal of the transistor is low, the corresponding transmission line is turned on to transmit radio frequency signals. The gate of the transistor is the control terminal, the gate is connected to the second resistor, the source is grounded, the substrate is grounded through the first resistor, the drain is connected to the selection node of the transmission line, and the impedance transformer is connected to the drain. The phase selection path of the first path selection switch is smaller than the phase selection path of the second path selection switch; The transmission line is laid out using a reciprocating folding method.

2. The 90-degree terahertz phase shifter of claim 1, wherein, The two path selection switches in the primary phase module and / or the secondary phase module are connected by a coplanar waveguide transmission line.

3. The 90-degree terahertz phase shifter of claim 1, wherein, The radio frequency signal is input from the first phase module, and after phase shifting, it is output through the second phase module. During transmission, radio frequency signals are transmitted along the transmission line corresponding to a low level at the transistor control terminal.

4. The 90-degree terahertz phase shifter of claim 1, wherein, The transistor is a CMOS transistor, BJT, FET, IGBT, PNP transistor, PIN transistor, or NPN transistor.

5. The 90-degree terahertz phase shifter of claim 1, wherein, The transmission line is a coplanar waveguide transmission line, a microstrip line, or a stripline.

6. A terahertz phased array radar, characterized by, Includes the 90-degree terahertz phase shifter as described in any one of claims 1-5.

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