Capacitor structure and semiconductor structure

Abstract

The embodiments of the present application relate to the field of semiconductor technology, and provide a capacitor structure and a semiconductor structure, wherein the capacitor structure comprises: a capacitor element composed of a positive electrode structure and a negative electrode structure, wherein the positive electrode structure comprises a current injection portion and a positive charge storage portion, and the negative electrode structure comprises a current output portion and a negative charge storage portion, and the positive charge storage portion and at least part of the negative charge storage portion are directly opposite; both the positive electrode structure and the negative electrode structure are conductive layers, and the currents generated in the positive charge storage portion and the negative charge storage portion flow in opposite directions, and the current injection portion and the current output portion are located on the same side along any current flow direction; and / or, at least part of the capacitor element is composed of active devices, and the currents generated in the gates of two adjacent active devices flow in opposite directions, and two adjacent current injection portions or two current output portions are located on opposite sides along any current flow direction, which is at least beneficial to reducing the intensity of the magnetic field radiated outward by the capacitor structure itself, so as to reduce interference with surrounding devices.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a capacitor structure and a semiconductor structure. Background Art

[0002] In the field of chip design, on-chip inductors and on-chip capacitors often play a pivotal role. However, the disadvantage of on-chip inductors is that they occupy a large amount of chip area and increase costs. This trend will become more significant with the further development of process nodes, because the size of passive devices has not decreased significantly with the reduction of process geometry compared to active devices. On-chip capacitors are widely used in analog circuits and mixed-signal integrated circuits. On-chip capacitors are usually composed of metal sheets that are electrically isolated from each other. In integrated circuits, metal-oxide-metal (MOM) on-chip capacitors have been widely used due to their large capacity advantages.

[0003] As technology nodes advance and process geometry decreases, the spacing between on-chip capacitors and other circuit systems in integrated circuits, such as on-chip inductors, also decreases. However, based on the high-frequency current changes in the on-chip capacitors, the magnetic field generated by the on-chip capacitors themselves will be superimposed, affecting other circuit systems in the integrated circuit that are close to the on-chip capacitors. Summary of the invention

[0004] The present application provides a capacitor structure and a semiconductor structure, which are at least beneficial to reducing the intensity of the magnetic field radiated outward by the capacitor structure itself, so as to reduce interference with surrounding devices.

[0005] On one hand, the present application provides a capacitor structure, comprising: at least one positive electrode structure, the positive electrode structure comprising a current injection portion and at least one positive charge storage portion electrically connected to the current injection portion; at least one negative electrode structure, the negative electrode structure comprising a current output portion and at least one negative charge storage portion electrically connected to the current output portion, the positive electrode structure and the negative electrode structure constitute a capacitor element, and in the same capacitor element, the positive charge storage portion and at least part of the negative charge storage portion are directly opposite; wherein, in the same capacitor element, the positive electrode structure and the negative electrode structure are both conductive layers, and during the charging or discharging process of the capacitor element, the current generated in the positive charge storage portion and the negative charge storage portion flows in opposite directions, and along any current flow direction, the current injection portion and the current output portion are located on the same side; and / or, at least part of the capacitor element is composed of active devices, and during the charging or discharging process of two adjacent active devices, the current generated in the gates of the two adjacent active devices flows in opposite directions, and along any current flow direction, the two adjacent current injection portions or the two adjacent current output portions are located on opposite sides.

[0006] According to the capacitor structure provided in the present application, the capacitor structure also includes: an insulating structure, located between any of the positive electrode structures and any of the negative electrode structures, the insulating structure including an isolation layer and a dielectric layer; a substrate, the substrate including a plurality of graphic layers stacked along a first direction, each of the graphic layers including the isolation layer and the conductive layer stacked along the first direction; the positive charge storage part and the negative charge storage part are composed of the conductive layer of the same layer, the positive charge storage part is a first metal strip extending along a second direction, the negative charge storage part is a second metal strip extending along the second direction, and the dielectric layer is located between the first metal strip and the second metal strip.

[0007] According to the capacitor structure provided in the present application, the conductive layer constituting the first metal strip and the second metal strip is a second conductive layer, the first metal strip and the second metal strip are alternately arranged along a third direction, there is a second metal strip between adjacent first metal strips, and there is a first metal strip between adjacent second metal strips, and the third direction intersects with the second direction; a current injection part is electrically connected to multiple first metal strips, and a current output part is electrically connected to multiple second metal strips; the capacitor structure also includes: a first conductive layer and a third conductive layer, respectively located on opposite sides of the second conductive layer along the first direction, one of the current injection part and the current output part is composed of the first conductive layer, and the other is composed of the third conductive layer.

[0008] According to the capacitor structure provided in the present application, the positive electrode structure and the negative electrode structure are alternately arranged along a third direction, and the third direction intersects with the second direction; at least two of the first metal strips are stacked along the first direction, and a current injection portion is electrically connected to at least two of the first metal strips stacked along the first direction; at least two of the second metal strips are stacked along the first direction, and a current output portion is electrically connected to at least two of the second metal strips stacked along the first direction.

[0009] According to the capacitor structure provided in the present application, the capacitor structure also includes: an insulating structure, located between any of the positive electrode structures and any of the negative electrode structures, the insulating structure including an isolation layer and a dielectric layer; a substrate, the substrate including a plurality of graphic layers stacked along a first direction, each of the graphic layers including the isolation layer and the conductive layer stacked along the first direction; the positive charge storage part and the negative charge storage part are respectively composed of different layers of the conductive layers, the positive charge storage part is a first metal strip extending along a second direction, and the negative charge storage part is a second metal strip extending along the second direction.

[0010] According to the capacitor structure provided in the present application, at least two of the first metal strips are arranged at intervals along the third direction, and the dielectric layer is located between the first metal strips adjacent to each other along the third direction, and the current injection portion is electrically connected to at least two of the first metal strips arranged at intervals along the third direction; at least two of the second metal strips are arranged at intervals along the third direction, and the dielectric layer is located between the second metal strips adjacent to each other along the third direction, and the current output portion is electrically connected to at least two of the second metal strips arranged at intervals along the third direction.

[0011] According to the capacitor structure provided in the present application, the first metal strips and the second metal strips are alternately arranged along the first direction; at least two of the first metal strips are arranged at intervals along the third direction, and the current injection portion is electrically connected not only to the at least two first metal strips arranged at intervals along the third direction, but also to the at least two first metal strips arranged along the first direction; at least two of the second metal strips are arranged at intervals along the third direction, and the current output portion is electrically connected not only to the at least two second metal strips arranged at intervals along the third direction, but also to the at least two second metal strips arranged along the first direction; the dielectric layer is located between the first metal strips adjacent to each other along the third direction, and between the second metal strips adjacent to each other along the third direction.

[0012] According to the capacitor structure provided in the present application, the current injection part includes a current injection plate and a plurality of first connection parts, one end of the first connection part is electrically in contact with the current injection plate, and the other end is electrically in contact with one of the first metal strips, the first connection parts correspond one-to-one with the first metal strips, and some of the first connection parts are bent metal segments; the current output part includes a current output plate and a plurality of second connection parts, one end of the second connection part is electrically in contact with the current output plate, and the other end is electrically in contact with one of the second metal strips, the second connection parts correspond one-to-one with the second metal strips, and some of the second connection parts are bent metal segments; the current injection plate and the current output plate are adjacent along the third direction or adjacent along the first direction.

[0013] According to the capacitor structure provided in the present application, in the capacitor element composed of the active device, the active device is a MOS tube, one of the positive electrode structure and the negative electrode structure includes a gate of the MOS tube, and the other of the positive electrode structure and the negative electrode structure includes a source, a drain and a base of the MOS tube.

[0014] According to the capacitor structure provided in the present application, a plurality of the capacitor elements are arranged at intervals along a preset direction, and among two adjacent capacitor elements, the positive electrode structure in one is adjacent to the positive electrode structure in the other along the preset direction, or the negative electrode structure in one is adjacent to the negative electrode structure in the other along the preset direction.

[0015] On the other hand, the present application provides a semiconductor structure, comprising: a substrate having an inductor structure surrounding area; an inductor structure located on the inductor structure surrounding area; and a capacitor structure according to any of the above items, the capacitor structure being located between the substrate and the inductor structure.

[0016] The technical solution provided by this application has at least the following advantages:

[0017] On the one hand, in the same capacitor element, it is designed that along the flow direction of any current, the current injection part and the current output part are located on the same side, so that the flow direction of the current generated in the positive charge storage part and the negative charge storage part facing at least part of the region is opposite, which is conducive to the induced magnetic field generated by the positive charge storage part and the negative charge storage part to cancel each other to a large extent, thereby facilitating a significant reduction in the magnetic field intensity radiated outward by the capacitor element itself, so as to significantly reduce the electromagnetic interference caused by the capacitor element to other electrical devices close to it. On the other hand, it is designed that at least part of the capacitor element is composed of active devices, and the gate of the active device can be used as the positive electrode structure or negative electrode structure of the capacitor element. Based on this, two adjacent active devices constitute a capacitor group, and in the same capacitor group, it is designed that along the flow direction of any current, two adjacent current injection parts or two adjacent current output parts are located on opposite sides, so that the flow direction of the current generated in the two adjacent gates is opposite, which is conducive to the induced magnetic field generated by the two adjacent gates to a large extent Can cancel each other, thereby facilitating a significant reduction in the magnetic field intensity radiated outward by the capacitor group itself, so as to significantly reduce the electromagnetic interference caused by the capacitor group to other electrical devices close to it.

[0018] Moreover, whether it is a capacitor element formed when both the positive electrode structure and the negative electrode structure are conductive layers, or a capacitor element formed by active devices, the induced magnetic fields generated by each component in the capacitor structure formed by the capacitor element can largely offset each other, which is beneficial to reducing the magnetic field intensity radiated outward by the capacitor structure itself, and is beneficial to reducing the electromagnetic interference caused by the capacitor structure to other electrical devices close to it. Therefore, there is no need to equip the capacitor structure with a shielding layer to reduce the electromagnetic interference caused to other electrical devices, which is beneficial to reducing the layout space required to be occupied by the capacitor structure. In actual applications, the capacitor structure can be directly arranged around other electrical devices, such as the inductor structure, to improve the space utilization around other electrical devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise specified, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present application or the technical solutions in the traditional technology, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 is a side view of an interdigital capacitor;

[0021] Figure 2 A schematic diagram of a first partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application;

[0022] Figure 3 A schematic diagram of a second partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application;

[0023] Figure 4 A schematic diagram of a third partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application;

[0024] Figure 5 A schematic diagram of a fourth partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application;

[0025] Figure 6 for Figure 5 A schematic diagram of a partial cross-sectional structure of the capacitor structure shown;

[0026] Figure 7 A fifth partial three-dimensional structural schematic diagram of a capacitor structure provided in an embodiment of the present application;

[0027] Figure 8 for Figure 7 A schematic diagram of a partial cross-sectional structure of the capacitor structure shown;

[0028] Fig. 9 A sixth partial three-dimensional structural schematic diagram of a capacitor structure provided in an embodiment of the present application;

[0029] Fig.10 for Fig. 9 A schematic diagram of a partial cross-sectional structure of the capacitor structure shown;

[0030] Fig.11 A seventh partial three-dimensional structural schematic diagram of a capacitor structure provided in an embodiment of the present application;

[0031] Fig.12 for Fig.11A schematic diagram of a partial cross-sectional structure of the capacitor structure shown;

[0032] Fig.13 for Fig.11 Another partial cross-sectional structural schematic diagram of the capacitor structure shown;

[0033] Fig.14 A schematic diagram of a partial three-dimensional structure of a semiconductor structure provided by another embodiment of the present application;

[0034] Fig.15 for Fig.14 A schematic diagram of a local cross-sectional structure of a semiconductor structure shown. DETAILED DESCRIPTION

[0035] As known from the background technology, it is at least beneficial to reduce the intensity of the magnetic field radiated outward by the capacitor structure itself, so as to reduce the interference to the surrounding devices.

[0036] The analysis found that the reference Figure 1 , the finger capacitor includes a positive electrode and a negative electrode that are relatively arranged, the positive electrode includes a positive plate 10 and a plurality of positive electrode fingers 20 connected to the positive plate 10, the negative electrode includes a negative plate 30 and a plurality of negative electrode fingers 40 connected to the negative plate 30, there is a negative electrode finger 40 between adjacent positive electrode fingers 20, and there is a positive electrode finger 20 between adjacent negative electrode fingers 40. Among them, when the finger capacitor is in the charging process, the direction of flow I1 of the current generated in the positive electrode finger 20 and the direction of flow I2 of the current generated in the negative electrode finger 40 are consistent. Similarly, when the finger capacitor is in the discharging process, the direction of flow of the current generated in the positive electrode finger 20 and the negative electrode finger 40 is also consistent. Therefore, in the charging and discharging process of the finger capacitor, the induced magnetic field generated by the positive electrode finger 20 and the negative electrode finger 40 is superimposed and strengthened. Moreover, when the interdigital capacitor is placed under the inductor without any special shielding treatment, the magnetic field generated by the interdigital capacitor and the magnetic field generated by the inductor interact with each other, which may also cause performance loss of the inductor, such as reduction of the quality factor.

[0037] In addition, when using active area devices as capacitors, in order to isolate the mutual influence between the capacitor and the inductor, the bottom metal interconnection line is used as a shield between the active area capacitor and the inductor. In order to reduce the mutual influence between the capacitor and the inductor, the level of metal that realizes the shielding function will be reduced as much as possible, such as using the M1 or M2 metal layer close to the substrate, and only using active area devices as capacitors. In order for the inductor to have a good quality factor, the highest layer of metal is usually used, resulting in a considerable degree of waste of other metal layers between the metal layer that realizes the shielding function and the top metal layer, so the effective utilization rate below the inductor area is still not high.

[0038] The present application provides a capacitor structure and a semiconductor structure. In the capacitor structure, on the one hand, in the same capacitor element, it is designed that the current injection part and the current output part are located on the same side along the flow direction of any current, so that the current generated in the positive charge storage part and the negative charge storage part facing at least part of the area flows in the opposite direction, which is conducive to the induced magnetic field generated by the positive charge storage part and the negative charge storage part to a large extent offset each other; on the other hand, it is designed that at least part of the capacitor element is composed of active devices, and it is designed that along the flow direction of any current, two adjacent current injection parts or two adjacent current output parts are located on opposite sides, so that the current generated in the two adjacent grids flows in the opposite direction, which is conducive to the induced magnetic field generated by the two adjacent grids to a large extent offset each other. Moreover, whether it is a capacitor element formed when the positive electrode structure and the negative electrode structure are both conductive layers, or a capacitor element formed by active devices, the induced magnetic fields generated by each component in the capacitor structure formed by the capacitor element can offset each other to a large extent, which is conducive to reducing the magnetic field intensity radiated outward by the capacitor structure itself, and is conducive to reducing the electromagnetic interference caused by the capacitor structure to other electrical devices close to it.

[0039] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0042] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0043] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0044] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0045] In the accompanying drawings corresponding to the embodiments of the present application, the thickness and area of ​​the layer are exaggerated for better understanding and ease of description. When describing a component (such as a layer, film, region or substrate) on another component or on the surface of another component, the component can be "directly" located on the surface of the other component, or a third component can exist between the two components. On the contrary, when describing a component on the surface of another component or when another component is formed or provided on the surface of a component, it means that there is no third component between the two components. In addition, when describing a component as "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.

[0046] In the description of the embodiments of the present application, when a component "includes" another component, unless otherwise specified, other components are not excluded, and other components may be further included. In addition, when a component such as a layer, film, region, or plate is referred to as "on / located on" another component, it can be "directly on" the other component (i.e., located on the surface of the other component without other components between the two), or another component may exist in between. In addition, when a component such as a layer, film, region, or plate is "directly located on" another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it means that no other components are located in between.

[0047] The terms used in the description of the various embodiments described herein are only used to describe specific embodiments and are not intended to be limiting. As used in the description of the various embodiments described and in the appended claims, "the components" are also intended to include plural forms unless the context clearly indicates otherwise. Among them, components include components such as layers, films, regions, or plates.

[0048] The following will be described in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present application, many technical details are provided in order to enable the reader to better understand the embodiments of the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the embodiments of the present application can be implemented.

[0049] An embodiment of the present application provides a capacitor structure, which will be described in detail below with reference to the accompanying drawings.

[0050] refer to Figure 2 , Figure 3 or Figure 4 The capacitor structure 100 includes: at least one positive electrode structure 101, the positive electrode structure 101 includes a current injection part 111 and at least one positive charge storage part 121 electrically connected to the current injection part 111; at least one negative electrode structure 102, the negative electrode structure 102 includes a current output part 112 and at least one negative charge storage part 122 electrically connected to the current output part 112, a positive electrode structure 101 and a negative electrode structure 102 constitute a capacitor element 110, in the same capacitor element 110, the positive charge storage part 121 and at least part of the negative charge storage part 122 are opposite.

[0051] It should be noted that Figure 2 A schematic diagram of a first partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application; Figure 3 A schematic diagram of a second partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application; Figure 4 A schematic diagram of a third partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application. Figure 2 This is only an example in which both the positive electrode structure 101 and the negative electrode structure 102 in the same capacitor element 110 are conductive layers. The fact that both the positive electrode structure 101 and the negative electrode structure 102 in the same capacitor element 110 are conductive layers will be described in detail later in conjunction with more drawings. Figure 3 and Figure 4 Each of these is an example in which the capacitive element 110 is constituted by the active device 103 . Figure 2 A current injection portion 111 and a positive charge storage portion 121 in a positive electrode structure 101 are divided by a dotted line, and a current output portion 112 and a negative charge storage portion 122 in a negative electrode structure 102 are divided by a dotted line; Figure 3 The current injection portion 111 and the positive charge storage portion 121 in the positive electrode structure 101 are divided by dotted lines; Figure 4 The current output portion 112 and the negative charge storage portion 122 in the negative electrode structure 102 are divided by dotted lines.

[0052] In addition, in the same capacitor element 110, the positive charge storage portion 121 and at least part of the negative charge storage portion 122 are facing each other, which means that the positive charge storage portion 121 and the negative charge storage portion 122 both extend along the second direction Y, and with the plane parallel to the second direction Y as the projection plane, the positive projection of the positive charge storage portion 121 and the positive projection of the negative charge storage portion 122 overlap or coincide, for example, the positive projection of one of the positive charge storage portion 121 and the negative charge storage portion 122 can be located in the positive projection of the other. In other words, the positive charge storage portion 121 and the negative charge storage portion 122 can be regarded as two plates of the capacitor element 110, with the plane parallel to the second direction Y as the projection plane, the positive projection of the positive charge storage portion 121 and the positive projection of the negative charge storage portion 122 overlap, then the two plates in the capacitor element 110 are partially facing each other, and the positive projection of the positive charge storage portion 121 and the positive projection of the negative charge storage portion 122 coincide, then the two plates in the capacitor element 110 are completely facing each other.

[0053] The current injection portion 111 in the positive electrode structure 101 refers to the operating area when a voltage is applied to the positive electrode structure 101, for example, a voltage is applied to the positive electrode structure 101 through a current injection point, so that a current is generated in the positive charge storage portion 121, wherein the current injection point is selected from the current injection portion 111. Similarly, the current output portion 112 in the negative electrode structure 102 refers to the operating area when a voltage is applied to the negative electrode structure 102, for example, a voltage is applied to the negative electrode structure 102 through a current output point, so that a current is generated in the negative charge storage portion 122, wherein the current output point is selected from the current output portion 112. In other words, the current injection portion 111 and the current output portion 112 are both artificially set areas for the convenience of clarifying where to apply voltage to the positive electrode structure 101 and the negative electrode structure 102, and the size of the area can be set according to actual needs. The capacitor element 110 includes at least the following two situations:

[0054] In some cases, reference Figure 2 In the same capacitor element 110, the positive electrode structure 101 and the negative electrode structure 102 are both conductive layers. During the charging or discharging process of the capacitor element 110, the currents generated in the positive charge storage part 121 and the negative charge storage part 122 flow in opposite directions, and along any current flow direction, the current injection part 111 and the current output part 112 are located on the same side.

[0055] Continue to refer Figure 2In the same capacitor element 110, the current generated in the positive charge storage unit 121 flows in a first direction Y1, and the current generated in the negative charge storage unit 122 flows in a second direction Y2. The first direction Y1 and the second direction Y2 are opposite. It is worth noting that in the same capacitor element 110, along any current flow direction, that is, along the first flow direction Y1 or the second flow direction Y2, the current injection part 111 and the current output part 112 are both located on the same side, thereby ensuring that the current flow directions generated in the positive charge storage part 121 and the negative charge storage part 122 facing at least a partial area are opposite, that is, the first flow direction Y1 and the second flow direction Y2 are opposite, so that the magnetic field directions of the induced magnetic fields generated by the positive charge storage part 121 and the negative charge storage part 122 are opposite, then the induced magnetic fields generated by the positive charge storage part 121 and the negative charge storage part 122 can largely offset each other, so that the induced magnetic field strength generated by the capacitor element 110 as a whole is much lower than the induced magnetic field strength generated by the positive charge storage part 121 and the negative charge storage part 122, thereby greatly reducing the magnetic field strength radiated outward by the capacitor element 110 itself, so as to greatly reduce the electromagnetic interference caused by the capacitor element 110 to other electrical devices close to it.

[0056] It is worth noting that in the same capacitor element 110, the higher the degree of alignment between the positive charge storage part 121 and the negative charge storage part 122, that is, taking the plane parallel to the second direction Y as the projection plane, the larger the overlapping area of ​​the positive charge storage part 121 and the negative charge storage part 122, the greater the degree of mutual cancellation of the induced magnetic fields generated by the positive charge storage part 121 and the negative charge storage part 122, and the more conducive to reducing the magnetic field intensity radiated outward by the capacitor element 110 itself, thereby helping to reduce the electromagnetic interference caused by the capacitor element 110 to other electrical devices close to it.

[0057] In other cases, reference Figure 3 or Figure 4 , at least part of the capacitor element 110 is composed of an active device 103, and during the charging or discharging process of two adjacent active devices 103, the currents generated in the gates 113 of the two adjacent active devices 103 flow in opposite directions; and along the flow direction of any current, reference Figure 3 , two adjacent current injection portions 111 are located on opposite sides, or, with reference to Figure 4 , two adjacent current output parts 112 are located on two opposite sides.

[0058] It should be noted that in the embodiment where the capacitor element 110 is composed of active devices 103, the gate 113 of a single active device 103 can be regarded as one plate of the capacitor element 110, and other conductive structures in the active device 103 can be regarded as another plate of the capacitor element 110. In practical applications, the potentials on the gates 113 of all active devices 103 are the same. In other words, in two adjacent active devices 103, the reference Figure 3 , two adjacent gates 113 are used as the positive electrode structure 101, or, reference Figure 4 , two adjacent gates 113 both serve as the negative electrode structure 102 .

[0059] Based on this premise, along the direction of any current flow, refer to Figure 3 , design two adjacent current injection parts 111 to be located on opposite sides, or, refer to Figure 4 , designing two adjacent current output parts 112 to be located on opposite sides, that is, placed adjacently and inversely, is conducive to canceling the total magnetic effect of the active device 103, so that the active device 103 can be placed in the area corresponding to the capacitor structure, and magnetic cancellation is achieved at the same time. Moreover, the magnetic effect of the active device 103 is limited by its physical position and structure. It is generally located in an area close to the substrate and is relatively far away from other conductive devices, such as inductors. Based on this, the magnetic field intensity radiated outward by the active device 103 itself is very low at other conductive devices, such as inductors. Continue to refer to Figure 3 or Figure 4 , it is designed that at least part of the capacitor element 110 is composed of an active device 103, and the gate 113 of the active device 103 can be used as the positive electrode structure 101 or the negative electrode structure 102 of the capacitor element 110. During the charging and discharging process of the active device 103 as the capacitor element 110, a current will be generated in the positive charge storage part 121 or the negative charge storage part 122 of the gate 113. In other words, two adjacent active devices 103 constitute a capacitor group 153. In the same capacitor group 153, the gate 113 of one active device 103 is used as the first gate 113a, and the gate 113 of the other active device 103 is used as the second gate 113b. The current generated in the first gate 113a flows in the third direction Y3, and the current generated in the second gate 113b flows in the fourth direction Y4. In some examples, reference Figure 3 , the first gate 113a and the second gate 113b can both be the positive electrode structure 101, then the first gate 113a and the second gate 113b both include a current injection portion 111 and a positive charge storage portion 121; in other examples, refer to Figure 4 , the first gate 113 a and the second gate 113 b can both be the negative electrode structure 102 , and the first gate 113 a and the second gate 113 b both include a current output portion 112 and a negative charge storage portion 122 .

[0060] Based on this, in the same capacitor group 153, along any current flow direction, that is, along the third flow direction Y3 or the fourth flow direction Y4, two adjacent current injection parts 111 or two adjacent current output parts 112 are designed to be located on opposite sides. Based on the fact that in the same capacitor group 153, the first gate 113a and the second gate 113b are adjacent, most of the areas of two adjacent positive charge storage parts 121 or two adjacent negative charge storage parts 122 are facing each other. In this way, the directions of the currents generated in the first gate 113a and the second gate 113b are opposite, that is, the third direction Y3 and the fourth direction Y4 are opposite, so that the magnetic field directions of the induced magnetic fields generated in the first gate 113a and the second gate 113b are opposite. The induced magnetic fields generated by the first gate 113a and the second gate 113b can largely offset each other, so that the induced magnetic field strength generated by the first gate 113a and the second gate 113b as a whole is much lower than the induced magnetic field strength generated by the first gate 113a and the second gate 113b, thereby greatly reducing the magnetic field strength radiated outward by the capacitor group 153 itself, thereby greatly reducing the electromagnetic interference caused by the capacitor group 153 to other electrical devices close to it.

[0061] It should be noted that, in the same capacitor group 153, the majority of the areas of two adjacent positive charge storage units 121 are facing each other, which means that the two adjacent positive charge storage units 121 extend along the second direction Y, and the plane parallel to the second direction Y is used as the projection plane, and the orthographic projections of the two adjacent positive charge storage units 121 have a majority overlap, for example, the orthographic projection of the positive charge storage unit 121 in the first gate 113a is located in the orthographic projection of the second gate 113b, and the orthographic projection of the positive charge storage unit 121 in the second gate 113b is located in the orthographic projection of the first gate 113a. The situation that the majority of the areas of two adjacent negative charge storage units 122 are facing each other is similar to the situation that the majority of the areas of two adjacent positive charge storage units 121 are facing each other, and will not be repeated here.

[0062] Based on the above two situations, it can be known that whether it is the capacitor element 110 formed when the positive electrode structure 101 and the negative electrode structure 102 are both conductive layers, or the capacitor element 110 formed by the active device 103, the induced magnetic fields generated by each component in the capacitor structure 100 formed by the capacitor element 110 can largely offset each other, which is beneficial to reducing the magnetic field intensity radiated outward by the capacitor structure itself, and is beneficial to reducing the electromagnetic interference caused by the capacitor structure 100 to other electrical devices close to it. Therefore, there is no need to equip the capacitor structure 100 with a shielding layer to reduce the electromagnetic interference caused to other electrical devices, which is beneficial to reducing the layout space required to be occupied by the capacitor structure 100, and in actual applications, the capacitor structure 100 can be directly arranged under other electrical devices, such as the inductor structure, to improve the space utilization under other electrical devices.

[0063] It is worth emphasizing that the capacitor structure provided in an embodiment of the present application is applied to the field of chip design. In other words, the capacitor structure provided in an embodiment of the present application can be used as a local electrical component in a chip, for example, an on-chip capacitor, to reduce the layout space required to be occupied by the on-chip capacitor, and in actual applications, the on-chip capacitor can be directly arranged under other electrical devices in the chip, such as an on-chip inductor, to improve the space utilization under other electrical devices in the chip.

[0064] It should be noted that the capacitor structure 100 provided in an embodiment of the present application may include a plurality of capacitor elements 110 , and the types of different capacitor elements 110 may be the same or different.

[0065] In some examples, reference Figure 2 The positive electrode structure 101 and the negative electrode structure 102 in any capacitor element 110 are both conductive layers. In any capacitor element 110, along the first flow direction Y1 or the second flow direction Y2, the current injection portion 111 and the current output portion 112 are located on the same side.

[0066] In other examples, reference Figure 3 or Figure 4 Any capacitor element 110 is composed of an active device 103, and two adjacent active devices 103 form a capacitor group 153. In any capacitor group 153, along the third flow direction Y3 or the fourth flow direction Y4, two adjacent current injection parts 111 or two adjacent current output parts 112 are located on opposite sides.

[0067] In some other examples, in combination with reference Figure 2 , Figure 3 and Figure 4 , the positive electrode structure 101 and the negative electrode structure 102 in a part of the capacitor elements 110 are both conductive layers. In the part of the capacitor elements 110, along the first flow direction Y1 or the second flow direction Y2, the current injection part 111 and the current output part 112 are located on the same side, and the other number of capacitor elements 110 are composed of active devices 103, and two adjacent active devices 103 constitute a capacitor group 153. In any capacitor group 153, along the third flow direction Y3 or the fourth flow direction Y4, two adjacent current injection parts 111 or two adjacent current output parts 112 are located on opposite sides. It is worth noting that the magnetic effect of the active device 103 is limited by its physical position and structure. It is generally located in an area close to the substrate and is relatively far away from other conductive devices, such as inductors. Based on this, Figure 2 The capacitor element 110 shown is called a metal capacitor. Figure 3 and Figure 4 The capacitor element 110 shown is called an active capacitor and is used in conjunction with Figure 2 The metal capacitors and Figure 3 or Figure 4 The active capacitor shown is conducive to the metal capacitor acting as a shielding layer between other conductive devices, such as an inductor and the active capacitor, isolating the magnetic leakage of the active device 103, and is generally more friendly to other conductive devices, such as inductors. The following will be described in detail with reference to the accompanying drawings that the positive electrode structure 101 and the negative electrode structure 102 in the same capacitor element 110 are both conductive layers.

[0068] In some embodiments, in conjunction with reference Figure 2 , Figures 5 to 8 The capacitor structure 100 may further include: an insulating structure 104, located between any positive electrode structure 101 and any negative electrode structure 102, the insulating structure 104 including an isolation layer 114 and a dielectric layer 124; a substrate 105, the substrate 105 including a plurality of graphic layers 106 stacked along a first direction X, each graphic layer 106 including an isolation layer 114 and a conductive layer 116 stacked along the first direction X; a positive charge storage portion 121 and a negative charge storage portion 122 are composed of the same conductive layer 116, the positive charge storage portion 121 is a first metal strip 131 extending along a second direction Y, the negative charge storage portion 122 is a second metal strip 132 extending along the second direction Y, and the dielectric layer 124 is located between the first metal strip 131 and the second metal strip 132.

[0069] It should be noted that the isolation layer 114 is used to achieve physical isolation between adjacent conductive layers 116 along the first direction X. A dielectric layer 124 may be provided in the layer where each conductive layer 116 is located. Each conductive layer 116 may be divided into at least two mutually insulated metal segments, for example, a first metal strip 131 and a second metal strip 132 formed by the same conductive layer 116. The dielectric layer 124 is used to achieve electrical insulation between the first metal strip 131 and the second metal strip 132. In practical applications, in addition to the first metal strip and the second metal strip, the same conductive layer may also include metal segments that realize other functions. It is worth emphasizing that the current injection part 111, the first metal strip 131, the current output part 112 and the second metal strip 132 can all be regarded as sub-components of the conductive layer 116 that realize different electrical functions.

[0070] In some examples, reference Figures 5 to 8, both the positive electrode structure 101 and the negative electrode structure 102 can be a comb-like structure. In other words, the positive electrode structure 101 includes a current injection portion 111 and at least two first metal strips 131 electrically connected to the current injection portion 111, the current injection portion 111 can be regarded as a comb handle of the comb-like structure, and a first metal strip 131 can be regarded as a comb tooth of the comb-like structure; the negative electrode structure 102 includes a current output portion 112 and at least two second metal strips 132 electrically connected to the current output portion 112, the current output portion 112 can be regarded as a comb handle of the comb-like structure, and a second metal strip 132 can be regarded as a comb tooth of the comb-like structure. In this way, it is beneficial to increase the facing area between the positive electrode structure 101 and the negative electrode structure 102 without increasing the layout area of ​​the capacitor element 110, so as to improve the capacitance value of the capacitor element 110.

[0071] In other examples, reference Figure 2 The positive electrode structure 101 includes a current injection portion 111 and a first metal strip 131 electrically connected to the current injection portion 111, for example, the positive electrode structure 101 is a long plate-like structure; the negative electrode structure 102 includes a current output portion 112 and a second metal strip 132 electrically connected to the current output portion 112, for example, the negative electrode structure 102 is a long plate-like structure.

[0072] The following will describe in detail the situation in which a conductive layer 116 includes both the first metal strip 131 and the second metal strip 132 in the same capacitor element 110 in conjunction with the accompanying drawings.

[0073] In some cases, in conjunction with reference Figure 5 and Figure 6 , the conductive layer 116 constituting the first metal strips 131 and the second metal strips 132 is the second conductive layer M2, the first metal strips 131 and the second metal strips 132 are alternately arranged along the third direction Z, there is a second metal strip 132 between adjacent first metal strips 131, and there is a first metal strip 131 between adjacent second metal strips 132, and the third direction Z intersects with the second direction Y; a current injection portion 111 is electrically connected to the plurality of first metal strips 131, and a current output portion 112 is electrically connected to the plurality of second metal strips 132; the capacitor structure 100 may further include: a first conductive layer M1 and a third conductive layer M3, respectively located on opposite sides of the second conductive layer M2 along the first direction X, one of the current injection portion 111 and the current output portion 112 is composed of the first conductive layer M1, and the other is composed of the third conductive layer M3.

[0074] It should be noted that Figure 5 A schematic diagram of a fourth partial three-dimensional structure of a capacitor structure provided in an embodiment of the present application; Figure 6 for Figure 5 A schematic diagram of a partial cross-sectional structure of the capacitor structure shown; Figure 5 and Figure 6Taking the current injection part 111 being located in the first conductive layer M1 and the current output part 112 being located in the third conductive layer M3 as an example, in actual applications, the current injection part may be located in the first conductive layer and the current output part may be located in the third conductive layer.

[0075] In addition, the intersection of the third direction Z and the second direction Y includes but is not limited to the third direction Z being orthogonal to the second direction Y. In one example, the angle between the third direction Z and the second direction Y may be 90°; in another example, the angle between the third direction Z and the second direction Y may be greater than or less than 90°. Moreover, the first direction X, the second direction Y, and the third direction Z may intersect with each other, and in one example, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other.

[0076] It is worth noting that the first metal strips 131 in the second conductive layer M2 are all electrically connected to the current injection part 111, and the second metal strips 132 in the second conductive layer M2 are all electrically connected to the current output part 112. In practical applications, the first metal strips in the second conductive layer can be electrically connected to the current output part, and the second metal strips in the second conductive layer can be electrically connected to the current injection part. In this way, the positive charge storage part 121 and the negative charge storage part 122 in the same capacitor element 110 are alternately arranged along the third direction Z to form a capacitor element 110 of an interdigital capacitor, which is conducive to improving the capacitance value of the capacitor element 110. Moreover, the current injection portion 111 and the current output portion 112 are respectively located on two opposite sides of the second conductive layer M2 along the first direction X, and along the flow direction of any current, the current injection portion 111 and the current output portion 112 are located on the same side, so that the flow directions of the currents in any adjacent first metal strips 131 and second metal strips 132 along the third direction Z are opposite, and the induced magnetic fields generated by any adjacent first metal strips 131 and second metal strips 132 along the third direction Z can offset each other, which is beneficial to reducing the magnetic field strength radiated outward by the capacitor element itself, so as to greatly reduce the electromagnetic interference caused by the capacitor element 110 to other electrical devices close to it.

[0077] It should be noted that the conductive layer 116 of the first metal strip 131 and the second metal strip 132 is composed of the second conductive layer M2, and it can be regarded that the first metal strip 131 and the second metal strip 132 are both located in the second conductive layer M2; one of the current injection part 111 and the current output part 112 is composed of the first conductive layer M1, and the other is composed of the third conductive layer M3, and it can be regarded that one of the current injection part 111 and the current output part 112 is located in the first conductive layer M1, and the other is located in the third conductive layer M3. In practical applications, at least one of the first conductive layer, the second conductive layer, and the third conductive layer may also have a metal segment for realizing other functions.

[0078] To facilitate the description of the positional relationship between the current injection portion 111 and the current output portion 112 and the first metal strip 131 and the second metal strip 132, Figure 5 The first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 may be three adjacent conductive layers 116 arranged in sequence along the third direction Z, that is, there is only one isolation layer 114 between adjacent conductive layers 116. In practical applications, the first conductive layer, the second conductive layer and the third conductive layer may be three conductive layers arranged along the third direction, and in addition to the isolation layer, there may be other conductive layers between adjacent conductive layers. Specifically, Figure 5 In the figure, a current injection part 111 is electrically connected to four first metal strips 131, and a current output part 112 is electrically connected to four second metal strips 132. In practical applications, there is no limitation on the number of first metal strips electrically connected to a current injection part and the number of second metal strips electrically connected to a current output part. For example, both can be 3, 5, 6 or 8. Moreover, in the same capacitor element, the number of first metal strips and the number of second metal strips can be the same, or the difference is 1.

[0079] In some examples, continue to combine reference Figure 5 and Figure 6 , the capacitor structure may also include: a plurality of first conductive pillars 118, located between the current injection part 111 and the plurality of first metal strips 131, for realizing electrical connection between the current injection part 111 and the plurality of first metal strips 131, and the first conductive pillars 118 may correspond one-to-one to the first metal strips 131; a plurality of second conductive pillars 128, located between the current output part 112 and the plurality of second metal strips 132, for realizing electrical connection between the current output part 112 and the plurality of second metal strips 132, and the second conductive pillars 128 may correspond one-to-one to the second metal strips 132. It is worth noting that the first conductive pillars 118 penetrate the isolation layer 114 between the first conductive layer M1 and the second conductive layer M2, and the second conductive pillars 128 penetrate the isolation layer 114 between the second conductive layer M2 and the third conductive layer M3. In order to facilitate the positional relationship between the current injection part 111, the first metal strip 131, the current output part 112 and the second metal strip 132, Figure 5 The first conductive pillar 118 and the second conductive pillar 128 are indicated by thick solid lines.

[0080] It should be noted that in practical applications, the capacitor structure may include multiple Figure 5As shown in the capacitor element 110, multiple capacitor elements 110 can be arranged at intervals along the first direction X, the second direction Y and / or the third direction Z. In some application scenarios, the current injection portion of one of the two capacitor elements adjacent to each other along the first direction and the current output portion of the other can be located in the same conductive layer, or the two current injection portions or the two current output portions of the two capacitor elements adjacent to each other along the first direction can be located in the same conductive layer, which is beneficial to reducing the layout space required for the capacitor structure.

[0081] In other cases, combined with reference Figure 7 and Figure 8 The positive electrode structure 101 and the negative electrode structure 102 are alternately arranged along a third direction Z, and the third direction Z intersects with the second direction Y; at least two first metal strips 131 are stacked along the first direction X, and a current injection portion 111 is electrically connected to the at least two first metal strips 131 stacked along the first direction X; at least two second metal strips 132 are stacked along the first direction X, and a current output portion 112 is electrically connected to the at least two second metal strips 132 stacked along the first direction X.

[0082] In other words, the positive electrode structure 101 and the negative electrode structure 102, both of which are comb-shaped structures, are alternately arranged along the third direction Z, and a positive electrode structure 101 and a negative electrode structure 102 adjacent to each other along the third direction Z can constitute a capacitor element 110. It is worth noting that at least two first metal strips 131 electrically connected to the same current injection portion 111 are stacked along the first direction X, and at least two second metal strips 132 electrically connected to the same current output portion 112 are stacked along the first direction X. In the same capacitor element 110, the multiple first metal strips 131 included in the positive electrode structure 101 can be respectively located in different layers of the conductive layer 116, and the multiple second metal strips 132 included in the negative electrode structure 102 can also be respectively located in different layers of the conductive layer 116. Moreover, in order to increase the facing area of ​​the positive electrode structure 101 and the negative electrode structure 102, the conductive layers occupied by the positive electrode structure 101 and the negative electrode structure 102 can be the same.

[0083] On this basis, along the flow direction of any current, the current injection part 111 and the current output part 112 are located on the same side. For the first metal strip 131 and the second metal strip 132 located in any conductive layer 116, the flow directions of the currents in any adjacent first metal strip 131 and second metal strip 132 along the third direction Z are opposite. Then, the induced magnetic fields generated by any adjacent first metal strip 131 and second metal strip 132 along the third direction Z can offset each other, which is beneficial to reduce the electromagnetic interference caused by the capacitor element 110 to other electrical devices close to it.

[0084] It should be noted that, first, Figure 7 and Figure 8 A current injection portion 111 is electrically connected to two first metal strips 131, and Figure 7 In the example, a current output portion 112 is electrically connected to two second metal strips 132. In practical applications, there is no limitation on the number of first metal strips electrically connected to the current injection portion and the number of second metal strips electrically connected to the current output portion. For example, both can be 3, 4, 5, 6 or 8. Moreover, in the same capacitor element, the number of first metal strips and the number of second metal strips can be the same. Second, Figure 7 In the example, four capacitor elements 110 are arranged along the third direction Z. In practical applications, multiple capacitor elements 110 are arranged along the third direction Z. Figure 7 The capacitor elements 110 shown may be arranged along the first direction X, the second direction Y and / or the third direction Z at intervals.

[0085] In some cases, continue to refer to Figure 7 and Figure 8 , a single current injection unit 111 may include at least two current injection blocks 111a arranged at intervals along the first direction X, and at least one first connecting column 111b, the first connecting column 111b is used to electrically connect two current injection blocks 111a adjacent to each other along the first direction X. It is worth noting that in the same positive electrode structure 101, the current injection block 111a corresponds to the positive charge storage unit 121 one by one. In other words, one current injection block 111a and one positive charge storage unit 121 are located in the same conductive layer. It is worth noting that the first connecting column 111b passes through the isolation layer 114 between the two positive charge storage units 121 adjacent to each other along the first direction X.

[0086] Similarly, a single current output unit 112 may include at least two current output blocks 112a arranged at intervals along the first direction X, and at least one second connecting column 112b, and the second connecting column 112b is used to electrically connect two current output blocks 112a adjacent to each other along the first direction X. It is worth noting that in the same negative electrode structure 102, the current output block 112a corresponds to the negative charge storage unit 122 one by one. In other words, one current output block 112a and one negative charge storage unit 122 are located in the same conductive layer. It is worth noting that the second connecting column 112b penetrates the isolation layer 114 between the two negative charge storage units 122 adjacent to each other along the first direction X.

[0087] It should be noted that in order to improve Figure 7 Clarity of the structure shown, Figure 7 The first connecting column 111b and the second connecting column 112b are indicated by thick solid lines, and Figure 7In the figure, the first connecting column 111b is drawn at the edge of the current injection block 111a, and the second connecting column 112b is drawn at the edge of the current output block 112a. In practical applications, there is no restriction on where the first connecting column 111b is electrically connected to the current injection block 111a, and where the second connecting column 112b is electrically connected to the current output block 112a. It is only necessary that the first connecting column 111b is electrically connected to two adjacent current injection blocks 111a along the first direction X, and the second connecting column 112b is electrically connected to two adjacent current output blocks 112a along the first direction X. In other embodiments, in combination with reference Figure 2 , Figures 9 to 13 The capacitor structure 100 may further include: an insulating structure 104, located between any positive electrode structure 101 and any negative electrode structure 102, the insulating structure 104 includes an isolation layer 114 and a dielectric layer 124; a substrate 105, the substrate 105 includes a plurality of graphic layers 106 stacked along a first direction X, each graphic layer 106 includes an isolation layer 114 and a conductive layer 116 stacked along the first direction X; a positive charge storage portion 121 and a negative charge storage portion 122 are respectively composed of different layers of conductive layers 116, the positive charge storage portion 121 is a first metal strip 131 extending along a second direction Y, and the negative charge storage portion 122 is a second metal strip 132 extending along the second direction Y.

[0088] It should be noted that the isolation layer 114 is the same as the above embodiment and will not be described in detail here. Each conductive layer 116 can be divided into at least two mutually insulated metal segments. For example, the same conductive layer 116 can constitute a plurality of first metal strips 131 or a plurality of second metal strips 132. The dielectric layer 124 is used to achieve electrical insulation between the plurality of first metal strips 131 located in the same conductive layer 116, or to achieve electrical insulation between the plurality of second metal strips 132 located in the same conductive layer 116. In practical applications, in addition to the plurality of first metal strips or the plurality of second metal strips, the same conductive layer may also include metal segments that achieve other functions.

[0089] In some examples, Figures 9 to 13 Both the positive electrode structure 101 and the negative electrode structure 102 may be comb-shaped structures, which is beneficial for increasing the facing area between the positive electrode structure 101 and the negative electrode structure 102 without increasing the layout area of ​​the capacitor element 110, so as to improve the capacitance value of the capacitor element 110.

[0090] In other examples, reference Figure 2The positive electrode structure 101 includes a current injection portion 111 and a first metal strip 131 electrically connected to the current injection portion 111, for example, the positive electrode structure 101 is a plate-shaped structure; the negative electrode structure 102 includes a current output portion 112 and a second metal strip 132 electrically connected to the current output portion 112, for example, the negative electrode structure 102 is a plate-shaped structure.

[0091] The following will describe in detail the situation in which the first metal strip 131 and the second metal strip 132 in the same capacitor element 110 are located in different conductive layers 116 , respectively, with reference to the accompanying drawings.

[0092] In some cases, in conjunction with reference Fig. 9 and Fig.10 At least two first metal strips 131 are arranged at intervals along a third direction Z, and the dielectric layer 124 is located between the first metal strips 131 adjacent to each other along the third direction Z, and a current injection portion 111 is electrically connected to the at least two first metal strips 131 arranged at intervals along the third direction Z; at least two second metal strips 132 are arranged at intervals along the third direction Z, and the dielectric layer 124 is located between the second metal strips 132 adjacent to each other along the third direction Z, and a current output portion 112 is electrically connected to the at least two second metal strips 132 arranged at intervals along the third direction Z.

[0093] in, Fig. 9 A sixth partial three-dimensional structural schematic diagram of a capacitor structure provided in an embodiment of the present application; Fig.10 for Fig. 9 A schematic diagram of a partial cross-sectional structure of the capacitor structure shown.

[0094] It should be noted that the current injection portion 111 is electrically connected to at least two first metal strips 131 arranged at intervals along the third direction Z, including at least the following two examples: In some examples, reference Fig. 9 , a current injection portion 111 is electrically connected to at least two first metal strips 131 arranged at intervals along the third direction Z. In other words, the current injection portion 111 and the first metal strips 131 electrically connected thereto are located in the same conductive layer 116; in other examples, the current injection portion is electrically connected to at least two first metal strips arranged at intervals along the third direction through conductive pillars. In other words, the current injection portion and the first metal strips electrically connected thereto are located in different conductive layers. Similarly, a current output portion 112 is electrically connected to at least two second metal strips 132 arranged at intervals along the third direction Z, which also includes at least two examples of electrical contact connection or electrical connection through conductive pillars.

[0095] On this basis, along the first flow direction Y1 (reference Figure 2 ) or the second flow direction Y2 (reference Figure 2), the current injection portion 111 and the current output portion 112 are both located on the same side, so that the currents in the first metal strip 131 and the second metal strip 132 adjacent to each other along the first direction X flow in opposite directions. Then, the induced magnetic fields generated by the first metal strip 131 and the second metal strip 132 adjacent to each other along the first direction X can offset each other, which is beneficial to reducing the electromagnetic interference caused by the capacitor element 110 to other electrical devices adjacent to it.

[0096] It should be noted that Fig. 9 In the example, a current injection portion 111 is electrically connected to four first metal strips 131 arranged at intervals along the third direction Z, and a current output portion 112 is electrically connected to four second metal strips 132 arranged at intervals along the third direction Z. In practical applications, there is no limitation on the number of first metal strips electrically connected to a current injection portion and the number of second metal strips electrically connected to a current output portion. For example, both can be 3, 5, 6 or 8, etc. Moreover, in the same capacitor element, the number of first metal strips and the number of second metal strips can be the same. In addition, in practical applications, the capacitor structure can include multiple Fig. 9 As shown in the capacitor element 110 , a plurality of capacitor elements 110 may be arranged in a spaced relationship along the first direction X, the second direction Y and / or the third direction Z.

[0097] In other cases, combined with reference Figures 11 to 13 , the first metal strips 131 and the second metal strips 132 are alternately arranged along the first direction X; at least two first metal strips 131 are arranged at intervals along the third direction Z, a current injection portion 111 is not only electrically connected to the at least two first metal strips 131 arranged at intervals along the third direction Z, but also electrically connected to the at least two first metal strips 131 arranged along the first direction X; at least two second metal strips 132 are arranged at intervals along the third direction Z, a current output portion 112 is not only electrically connected to the at least two second metal strips 132 arranged at intervals along the third direction Z, but also electrically connected to the at least two second metal strips 132 arranged along the first direction X; the dielectric layer 124 is located between the adjacent first metal strips 131 along the third direction Z, and between the adjacent second metal strips 132 along the third direction Z.

[0098] in, Fig.11 A seventh partial three-dimensional structural schematic diagram of a capacitor structure provided in an embodiment of the present application; Fig.12 for Fig.11 A schematic diagram of a partial cross-sectional structure of the capacitor structure shown; Fig.13 for Fig.11 Another partial cross-sectional structural schematic diagram of the capacitor structure shown.

[0099] It is worth noting that a current injection portion 111 is not only electrically connected to the first metal strip 131 located in the same conductive layer 116, but also electrically connected to the first metal strip 131 located in a different conductive layer 116. When the layout area of ​​the current injection portion 111 perpendicular to the first direction X is constant, it is beneficial to further increase the number of first metal strips 131 that can be electrically connected to the current injection portion 111. Moreover, a current output portion 112 is not only electrically connected to the second metal strip 132 located in the same conductive layer 116, but also electrically connected to the second metal strip 132 located in a different conductive layer 116. When the layout area of ​​the current output portion 112 perpendicular to the first direction X is constant, it is beneficial to further increase the number of second metal strips 132 that can be electrically connected to the current output portion 112. On this basis, it is beneficial to increase the facing area between a single current injection portion 111 and a single current output portion 112, so as to further improve the capacitance value of a single capacitor element 110.

[0100] On this basis, along the first flow direction Y1 (reference Figure 2 ) or the second flow direction Y2 (reference Figure 2 ), the current injection portion 111 and the current output portion 112 are both located on the same side, so that the currents in the first metal strips 131 and the second metal strips 132 adjacent to each other along the first direction X flow in opposite directions. Then, the induced magnetic fields generated by any adjacent first metal strips 131 and second metal strips 132 along the first direction X can offset each other, which is beneficial to reducing the electromagnetic interference caused by the capacitor element 110 to other electrical devices close to it.

[0101] It should be noted that Fig.11 In the example, in the same capacitor element 110, the number of first metal strips 131 arranged at intervals along the third direction Z is 4, and the number of second metal strips 132 arranged at intervals along the third direction Z is 4. In actual applications, there is no limitation on the number of first metal strips arranged at intervals along the third direction in the same capacitor element, and the number of second metal strips arranged at intervals along the third direction in the same capacitor element. For example, both can be 3, 5, 6 or 8, etc. Moreover, in the same capacitor element, the number of first metal strips and the number of second metal strips arranged at intervals along the third direction can be the same.

[0102] also, Fig.11In the example, in the same capacitor element 110, the number of the first metal strips 131 arranged at intervals along the first direction X is 2, and the number of the second metal strips 132 arranged at intervals along the first direction X is 2. In actual applications, there is no limitation on the number of the first metal strips arranged at intervals along the first direction in the same capacitor element, and the number of the second metal strips arranged at intervals along the first direction in the same capacitor element. For example, both can be 3, 5, 6 or 8, etc. Moreover, in the same capacitor element, the number of the first metal strips and the number of the second metal strips arranged at intervals along the first direction can also be the same.

[0103] The following describes in detail that the current injection unit 111 is electrically connected to the first metal strip 131 located in the same conductive layer 116 and a different conductive layer 116 , and the current output unit 112 is electrically connected to the second metal strip 132 located in the same conductive layer 116 and a different conductive layer 116 .

[0104] In some examples, continue to refer to Figures 11 to 13 The current injection portion 111 includes a current injection plate 141 and a plurality of first connection portions 151. One end of the first connection portion 151 is in electrical contact with the current injection plate 141, and the other end is in electrical contact with a first metal strip 131. The first connection portion 151 corresponds to the first metal strip 131 one by one, and some of the first connection portions 151 are bent metal segments. The current output portion 112 includes a current output plate 142 and a plurality of second connection portions 152. One end of the second connection portion 152 is in electrical contact with the current output plate 142, and the other end is in electrical contact with a second metal strip 132. The second connection portion 152 corresponds to the second metal strip 132 one by one, and some of the second connection portions 152 are bent metal segments. In addition, in order to facilitate the positional relationship between the current injection plate 141, the first connection portion 151, the first metal strip 131, the current output plate 142, the second connection portion 152, and the second metal strip 132, Fig.11 The first connection portion 151 and the second connection portion 152 are indicated by thick solid lines.

[0105] In some examples, reference Fig.11 , the current injection plate 141 and the current output plate 142 are adjacent to each other along the third direction Z; in other examples, the current injection plate and the current output plate can also be adjacent to each other along the first direction. Figure 2 ) or the second flow direction Y2 (reference Figure 2 ), the current injection portion 111 and the current output portion 112 are both located on the same side.

[0106] In some examples, continue to refer to Figures 11 to 13, a single current injection plate 141 may include at least four current injection sub-plates 141a arranged at intervals along the first direction X, and at least three third connecting pillars 141b, and the third connecting pillars 141b are used to electrically connect two current injection sub-plates 141a adjacent to each other along the first direction X. It is worth noting that in the same positive electrode structure 101, one current injection sub-plate 141a and at least two positive charge storage units 121 are located in the same conductive layer. It is worth noting that the third connecting pillar 141b penetrates the isolation layer 114 between two positive charge storage units 121 adjacent to each other along the first direction X.

[0107] Similarly, a single current output plate 142 may include at least four current output sub-plates 142a arranged at intervals along the first direction X, and at least three fourth connecting pillars 142b, and the fourth connecting pillars 142b are used to electrically connect two current output sub-plates 142a adjacent to each other along the first direction X. It is worth noting that in the same negative electrode structure 102, one current output sub-plate 142a and at least two negative charge storage units 122 are located in the same conductive layer. It is worth noting that the fourth connecting pillar 142b penetrates the isolation layer 114 between two negative charge storage units 122 adjacent to each other along the first direction X.

[0108] It should be noted that in order to improve Fig.11 Clarity of the structure shown, Fig.11 The third connecting column 141b and the fourth connecting column 142b are indicated by thick solid lines, and Figure 7 In the figure, the third connecting column 141b is drawn at the edge of the current injection sub-plate 141a, and the third connecting column 141b is drawn at the edge of the current output sub-plate 142a. In practical applications, there is no restriction on where the third connecting column 141b is electrically contacted with the current injection sub-plate 141a, and where the third connecting column 141b is electrically contacted with the current output sub-plate 142a. It is only necessary that the third connecting column 141b is used to electrically connect two adjacent current injection sub-plates 141a along the first direction X, and the fourth connecting column 142b is used to electrically connect two adjacent current output sub-plates 142a along the first direction X.

[0109] In addition, in order to clearly distinguish the current injection portion 111, the positive charge storage portion 121 (ie, the first metal strip 131), the current output portion 112, and the negative charge storage portion 122 (ie, the second metal strip 132), Figures 5 to 10 The current injection portion 111, the first metal strip 131, the current output portion 112 and the second metal strip 132 are drawn using different filling methods, and, Figure 7 and Fig. 9 In both, the current injection part 111 and the current output part 112 are drawn in perspective; Figures 11 to 13The current injection plate 141, the first metal strip 131, the current output plate 142 and the second metal strip 132 are drawn using different filling methods, and, Fig.11 The current injection sub-board 141a and the current output sub-board 142a are drawn in a perspective manner.

[0110] The following will describe in detail the capacitor element 110 composed of the active device 103 with reference to the accompanying drawings.

[0111] In some embodiments, reference Figure 3 or Figure 4 In the capacitor element 110 composed of the active device 103, the active device 103 is a MOS (Metal-Oxide-Semiconductor) tube, one of the positive electrode structure 101 and the negative electrode structure 102 includes a gate 113 of the MOS tube, and the other of the positive electrode structure 101 and the negative electrode structure 102 includes a source 123, a drain 133 and a substrate 105 of the MOS tube. In some cases, the substrate 105 can also be called the base of the MOS tube. Among them, MOS is the abbreviation of MOSFET, and MOSFET is short for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

[0112] It is worth noting that in the integrated circuit, using the MOS tube as the capacitor element 110 is conducive to fully utilizing the substrate resources. Figure 2 , Figures 5 to 13 When the capacitor element 110 shown is a metal capacitor, the substrate 105 directly facing the metal capacitor along the first direction X is not fully utilized. In this case, an active device 103, such as a MOS transistor, is added to the substrate 105 directly facing the metal capacitor along the first direction X as the capacitor element 110, which is beneficial to improving the capacitance value per unit area of ​​this area. Figure 3 , the active device 103 is an NMOS tube, then the first gate 113a and the second gate 113b can both be the positive electrode structure 101; in other cases, refer to Figure 4 , the active device 103 is a PMOS tube, then the first gate 113 a and the second gate 113 b can both be the negative electrode structure 102 .

[0113] In some cases, the source 123 , the drain 133 and the substrate 105 of the MOS transistor are all grounded.

[0114] It is worth noting that in the embodiment where the capacitor element 110 is composed of MOS transistors, the gate 113 of a single MOS transistor can be regarded as one plate of the capacitor element 110, and the source 123, the drain 133 and the substrate 105 as a whole constitute another plate. In practical applications, the potentials on the gates 113 of all MOS transistors are the same, and they are all used as the positive electrode structure 101 or the negative electrode structure 102. Based on this premise, along the flow direction of any current, reference Figure 3 , design two adjacent current injection parts 111 to be located on opposite sides, or, refer to Figure 4 The two adjacent current output parts 112 are designed to be located on opposite sides, that is, placed adjacently and inversely, which is conducive to offsetting the total magnetic effect of the active device 103, so that the MOS tube can be placed in the area corresponding to the capacitor structure and achieve magnetic offset at the same time.

[0115] In addition, on the one hand, the magnetic effect of the active device 103 is limited by its physical position and structure. It is generally located in a region close to the substrate 105 and relatively far away from other conductive devices, such as an inductor. Based on this, the magnetic field intensity radiated outward by the active device 103 itself to other conductive devices, such as an inductor, is very low. On the other hand, Figure 2 The capacitor element 110, i.e., the metal capacitor, can be designed between the active device 103 and other conductive devices, such as an inductor, to further shield the magnetic field of the active device 103. The combination of these two aspects can further improve the overall benefits of the capacitor structure, for example, the unit capacitance of the capacitor structure is further improved, and the magnetic field radiation of the capacitor structure is further reduced.

[0116] In some embodiments, reference Figure 2 , Figures 5 to 13 A single capacitor element 110, multiple capacitor elements 110 can be arranged at intervals along a preset direction, and among two adjacent capacitor elements 110, the positive electrode structure 101 in one is adjacent to the positive electrode structure 101 in the other along the preset direction, or the negative electrode structure 102 in one is adjacent to the negative electrode structure 102 in the other along the preset direction.

[0117] It is worth noting that the preset direction can be any one of the first direction X, the second direction Y or the third direction Z. In other words, for multiple Figure 2 , Figures 5 to 13In the arrangement of the capacitor elements 110 shown, the multiple capacitor elements 110 can be arranged at intervals along the first direction X, can be arranged at intervals along the second direction Y, and can be arranged at intervals along the third direction Z. On this basis, it can be designed that in two capacitor elements 110 adjacent to each other along a preset direction, the two positive electrode structures 101 are arranged adjacent to each other, or the two negative electrode structures 102 are arranged adjacent to each other. To summarize, on the one hand, in the same capacitor element 110, it is designed that along the flow direction of any current, the current injection part 111 and the current output part 112 are located on the same side, so that the currents generated in the positive charge storage part 121 and the negative charge storage part 122 that are directly opposite to each other in at least a partial area flow in opposite directions, which is beneficial for the induced magnetic fields generated by the positive charge storage part 121 and the negative charge storage part 122 to largely offset each other; on the other hand, it is designed that at least part of the capacitor element 110 is composed of active devices 103, and it is designed that along the flow direction of any current, two adjacent current injection parts 111 or two adjacent current output parts 112 are located on opposite sides, so that the currents generated in two adjacent gates 113 flow in opposite directions, which is beneficial for the induced magnetic fields generated by the two adjacent gates 113 to largely offset each other. Moreover, whether it is the capacitor element 110 formed when the positive electrode structure 101 and the negative electrode structure 102 are both conductive layers 116, or the capacitor element 110 formed by the active device 103, the induced magnetic fields generated by each component in the capacitor structure 100 formed by the capacitor element 110 can offset each other to a large extent, which is beneficial to reducing the magnetic field intensity radiated outward by the capacitor structure itself, and is beneficial to reducing the electromagnetic interference caused by the capacitor structure 100 to other electrical devices close to it.

[0118] Another embodiment of the present application further provides a semiconductor structure, including the capacitor structure provided in the above embodiment. The semiconductor structure provided in another embodiment of the present application will be described in detail below in conjunction with the accompanying drawings. It should be noted that the parts that are the same or corresponding to the above embodiment will not be repeated here.

[0119] Combined with reference Fig.14 and Fig.15 , a semiconductor structure includes: a substrate 105, on which an inductor structure surrounding area 115 is provided; an inductor structure 107, located on the inductor structure surrounding area 115; and the capacitor structure 100 provided in the above-mentioned embodiment, wherein the capacitor structure 100 is located between the substrate 105 and the inductor structure 107.

[0120] in, Fig.14 A schematic diagram of a partial three-dimensional structure of a semiconductor structure provided by another embodiment of the present application; Fig.15 for Fig.14 A schematic diagram of a local cross-sectional structure of a semiconductor structure shown.

[0121] It should be noted that Fig.14 and Fig.15 In the example, the capacitor structure 100 is located on the inductor structure enclosed area 115. In other words, taking the plane perpendicular to the first direction X as the reference plane, the positive projection of the capacitor structure 100 on the reference plane is located on the inductor structure enclosed area 115. It is worth noting that in the capacitor structure 100, based on the same capacitor element 110, along the flow direction of any current, the current injection portion 111 and the current output portion 112 are located on the same side, or, along the flow direction of any current, the two current injection portions 111 or the two current output portions 112 in two adjacent active devices 103 are located on opposite sides, so that the induced magnetic fields generated by each component in the capacitor structure 100 can largely offset each other, which is beneficial to reduce the magnetic field intensity radiated outward by the capacitor structure itself, and is beneficial to reduce the electromagnetic interference caused by the capacitor structure 100 to the inductor structure 107 located directly above the capacitor structure 100, and reduce the eddy current generated by the capacitor structure 100 in the inductor structure 107, thereby improving the quality factor of the inductor structure 107.

[0122] Moreover, the capacitor structure 100 is arranged directly below the inductor structure 107. On the one hand, it is beneficial to shield the induced magnetic field generated by the inductor structure 107 from penetrating into the substrate 105 with the help of the capacitor structure 100. On the other hand, it is also beneficial to make full use of the layout space directly below the inductor structure 107 with the help of the capacitor structure 100, and further improve the integration of the semiconductor structure. In addition, designing the active device 103 as the capacitor element 110 in the vacant substrate 105 in the semiconductor structure is beneficial to further make full use of the layout space and active area resources located directly below the inductor structure 107. It is worth emphasizing that the semiconductor structure provided by another embodiment of the present application is applied to the field of chip design. In other words, the semiconductor structure provided by another embodiment of the present application can be used as a local electrical component in a chip, for example, the capacitor structure 100 is used as an on-chip capacitor and the inductor structure 107 is used as an on-chip inductor to improve the integration inside the chip.

[0123] In other cases, the capacitor structure may be only partially located on the area surrounded by the inductor structure. In other words, taking the plane perpendicular to the first direction as the reference plane, the orthographic projection of the capacitor structure on the reference plane only partially overlaps with the area surrounded by the inductor structure; or, the capacitor structure is located at the periphery of the area surrounded by the inductor structure. In other words, taking the plane perpendicular to the first direction as the reference plane, the orthographic projection of the capacitor structure on the reference plane does not overlap with the area surrounded by the inductor structure.

[0124] It is worth noting that in order to ensure the good working performance of the inductor structure, not only should devices that cause large magnetic interference to the inductor structure be avoided in the area surrounded by the inductor structure, but also devices that cause large magnetic interference to the inductor structure should be avoided in the peripheral area of ​​the area surrounded by the inductor structure to a certain extent. Based on the capacitor structure 100 provided in the aforementioned embodiment, the magnetic field intensity radiated outward by the capacitor structure 100 itself can be significantly reduced, thereby effectively reducing the electromagnetic interference caused by the capacitor structure 100 to the inductor structure 107 located around the capacitor structure 100. Therefore, the capacitor structure 100 provided in the aforementioned embodiment can be designed to be located on the area surrounded by the inductor structure, or it can be designed to be located only partially on the area surrounded by the inductor structure, or it can be designed to be located on the periphery of the area surrounded by the inductor structure. In some cases, refer to Fig.14 , the capacitor structure 100 may be located at the center of the inductor structure surrounding area 115 .

[0125] In some cases, the semiconductor structure may constitute an LC oscillating circuit or a filter, and the LC oscillating circuit or the filter includes a capacitor structure 100 and an inductor structure 107 .

[0126] It should be noted that Fig.14 The capacitor structure 100 shown in FIG. Figures 2 to 13 The capacitor structure 100 shown in any of the figures, Fig.15 Only Figure 6 The capacitor structure 100 shown is an example, which reflects the positional relationship between the inductor structure 107 and the capacitor structure 100 .

[0127] It can be understood by those skilled in the art that the above-mentioned embodiments are specific embodiments of the present application, and in practical applications, various changes can be made to them in form and detail without departing from the spirit and scope of the embodiments of the present application. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application, so the protection scope of the embodiments of the present application shall be based on the scope defined in the claims.

Claims

1. A capacitor structure, characterized in that: include: at least one positive electrode structure, the positive electrode structure comprising a current injection portion and at least one positive charge storage portion electrically connected to the current injection portion; At least one negative electrode structure, the negative electrode structure comprising a current output portion and at least one negative charge storage portion electrically connected to the current output portion, the positive electrode structure and the negative electrode structure forming a capacitor element, in the same capacitor element, the positive charge storage portion and at least part of the negative charge storage portion are facing each other; Wherein, in the same capacitor element, the positive electrode structure and the negative electrode structure are both conductive layers, and during the process of charging or discharging the capacitor element, the current generated in the positive charge storage part and the negative charge storage part flows in opposite directions, and along the flow direction of any current, the current injection part and the current output part are located on the same side; and / or, at least part of the capacitor element is composed of active devices, and during the process of charging or discharging two adjacent active devices, the current generated in the gates of the two adjacent active devices flows in opposite directions, and along the flow direction of any current, the two adjacent current injection parts or the two adjacent current output parts are located on opposite sides; An insulating structure, located between any of the positive electrode structures and any of the negative electrode structures, the insulating structure comprising an isolation layer and a dielectric layer; A substrate, the substrate comprising a plurality of graphic layers stacked along a first direction, each of the graphic layers comprising the isolation layer and the conductive layer stacked along the first direction; The positive charge storage unit and the negative charge storage unit are composed of the same conductive layer, or are respectively composed of different conductive layers. The positive charge storage unit is a first metal strip extending along the second direction, the negative charge storage unit is a second metal strip extending along the second direction, and the dielectric layer is located between the first metal strip and the second metal strip.

2. The capacitor structure according to claim 1, characterized in that: The conductive layer constituting the first metal strip and the second metal strip is a second conductive layer, the first metal strip and the second metal strip are alternately arranged along a third direction, there is one second metal strip between adjacent first metal strips, and there is one first metal strip between adjacent second metal strips, and the third direction intersects with the second direction; A current injection portion is electrically connected to the first metal strips, and a current output portion is electrically connected to the second metal strips; The capacitor structure also includes: a first conductive layer and a third conductive layer, which are respectively located on two opposite sides of the second conductive layer along the first direction, and one of the current injection part and the current output part is composed of the first conductive layer, and the other is composed of the third conductive layer.

3. The capacitor structure according to claim 1, characterized in that: The positive electrode structures and the negative electrode structures are alternately arranged along a third direction, and the third direction intersects with the second direction; At least two of the first metal strips are stacked along the first direction, and one of the current injection portions is electrically connected to the at least two of the first metal strips stacked along the first direction; At least two of the second metal strips are stacked along the first direction, and one of the current output portions is electrically connected to the at least two of the second metal strips stacked along the first direction.

4. The capacitor structure according to claim 1, characterized in that: At least two of the first metal strips are arranged at intervals along a third direction, and the dielectric layer is located between the first metal strips adjacent to each other along the third direction, and the current injection portion is electrically connected to at least two of the first metal strips arranged at intervals along the third direction; At least two of the second metal strips are arranged at intervals along the third direction, and the dielectric layer is located between adjacent second metal strips along the third direction. The current output portion is electrically connected to at least two of the second metal strips arranged at intervals along the third direction.

5. The capacitor structure according to claim 1, characterized in that: The first metal strips and the second metal strips are alternately arranged along the first direction; At least two of the first metal strips are arranged at intervals along a third direction, and the current injection portion is electrically connected not only to the at least two of the first metal strips arranged at intervals along the third direction, but also to the at least two of the first metal strips arranged along the first direction; At least two of the second metal strips are arranged at intervals along the third direction, and the current output portion is electrically connected not only to the at least two of the second metal strips arranged at intervals along the third direction, but also to the at least two of the second metal strips arranged along the first direction; The dielectric layer is located between the first metal strips adjacent to each other along the third direction, and is located between the second metal strips adjacent to each other along the third direction.

6. The capacitor structure according to claim 5, characterized in that: The current injection portion includes a current injection plate and a plurality of first connection portions, one end of the first connection portion is in electrical contact with the current injection plate, and the other end is in electrical contact with one of the first metal strips, the first connection portions correspond to the first metal strips one by one, and some of the first connection portions are bent metal segments; The current output part includes a current output plate and a plurality of second connection parts, one end of the second connection part is in electrical contact with the current output plate, and the other end is in electrical contact with a second metal strip, the second connection parts correspond to the second metal strips one by one, and some of the second connection parts are bent metal segments; The current injection plate and the current output plate are adjacent to each other along the third direction or adjacent to each other along the first direction.

7. The capacitor structure according to claim 1, characterized in that: In the capacitor element composed of the active device, the active device is a MOS tube, one of the positive electrode structure and the negative electrode structure includes a gate of the MOS tube, and the other of the positive electrode structure and the negative electrode structure includes a source, a drain and a substrate of the MOS tube.

8. The capacitor structure according to claim 1, characterized in that: The plurality of capacitor elements are arranged at intervals along a preset direction, and among two adjacent capacitor elements, the positive electrode structure in one is adjacent to the positive electrode structure in the other along the preset direction, or the negative electrode structure in one is adjacent to the negative electrode structure in the other along the preset direction.

9. A semiconductor structure, characterized in that: include: A substrate having an inductor structure surrounding area; An inductor structure, located on the area surrounded by the inductor structure; The capacitor structure according to any one of claims 1 to 8, wherein the capacitor structure is located between the substrate and the inductor structure.

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