Multi-layer film growth control system and method in epitaxial equipment

Abstract

The invention relates to the technical field of epitaxial control, in particular to a multi-layer thin film growth control system and method in epitaxial equipment, and the system comprises a monitoring module, a threshold storage module, a processing module, a temperature control module and a gas control module. Growth data are obtained by detecting a plurality of detection points on epitaxial equipment, then the growth data are judged and processed based on threshold data, and if a threshold value is exceeded, a control instruction is generated according to the threshold data to control a temperature control module and a gas control module, so that growth control over multiple layers of thin films in the epitaxial equipment is achieved. Therefore, the problem that the yield of the epitaxial wafer is reduced due to the fact that a worker controls the reaction chamber through human experience when the epitaxial wafer is produced is solved.

Description

Technical Field

[0001] The present invention relates to the field of epitaxial control technology, and in particular to a multilayer thin film growth control system and method in an epitaxial device. Background Art

[0002] As the third generation wide bandgap semiconductor material, silicon carbide has advantages over traditional silicon materials such as high bandgap width, high breakdown electric field, high thermal conductivity and high electron saturation drift rate, which makes it have great potential in the fields of high power, high voltage, high temperature and high frequency, and has wide applications in new energy, rail transportation and power grid. The silicon carbide epitaxial layer is the bridge between the silicon carbide substrate and the silicon carbide device. Improving the consistency of the silicon carbide epitaxial layer is of great significance to increasing the device qualification rate.

[0003] However, in the process of producing epitaxial wafers using epitaxial growth equipment, the staff sets the temperature of the reaction chamber based on human experience to control the wavelength of the epitaxial wafers produced by the entire reaction chamber, resulting in poor accuracy of the wavelength of the epitaxial wafers produced by the reaction chamber, reducing the yield of the epitaxial wafers and causing a waste of manpower costs. Summary of the invention

[0004] The purpose of the present invention is to provide a multilayer thin film growth control system and method in an epitaxial device, aiming to solve the problem of reduced epitaxial wafer yield caused by workers controlling the reaction chamber through human experience during the production of epitaxial wafers.

[0005] To achieve the above-mentioned object, in a first aspect, the present invention provides a multilayer thin film growth control system in an epitaxial device, comprising a monitoring module, a threshold storage module, a processing module, a temperature control module and a gas control module, wherein the monitoring module, the threshold storage module, the temperature control module and the gas control module are respectively connected to the processing module;

[0006] The monitoring module is used to detect the growth data of the epitaxial device;

[0007] The threshold storage module is used to store threshold data of multi-layer thin film growth;

[0008] The processing module controls the temperature control module and the gas control module based on the threshold data and the growth data;

[0009] The temperature control module is used to control the temperature of the epitaxial device;

[0010] The gas control module is used to control the gas concentration and gas flow of the epitaxial equipment.

[0011] Wherein, the monitoring module comprises a test point setting unit, a detection unit and a data transmission unit, and the test point setting unit, the detection unit and the data transmission unit are connected in sequence;

[0012] The test point setting unit is used to set test points on the epitaxial device;

[0013] The detection unit is used to perform growth data detection on the test point;

[0014] The data transmission unit is used to transmit the growth data to the processing module.

[0015] Wherein, the threshold storage module comprises an input unit, a numbering unit and a storage unit, and the input unit, the numbering unit and the storage unit are connected in sequence;

[0016] The input unit is used to input threshold data;

[0017] The numbering unit is used to number the threshold data;

[0018] The storage unit is used to store the numbered threshold data.

[0019] Wherein, the processing module includes a query unit, a comparison unit, a generation unit and an execution unit, and the query unit, the comparison unit, the generation unit and the execution unit are connected in sequence;

[0020] The query unit is used to query the corresponding threshold data in the storage unit;

[0021] The comparison unit compares the detection data based on the corresponding threshold data to obtain difference data;

[0022] The generating unit generates a control instruction based on the difference data;

[0023] The execution unit controls the temperature control module and the gas flow control module based on the control instruction.

[0024] Wherein, the temperature control module includes a temperature increasing unit, a temperature decreasing unit and a constant temperature unit;

[0025] The temperature raising unit is used to control the temperature raising of the epitaxial device;

[0026] The temperature reduction unit is used to control the temperature of the epitaxial device to decrease;

[0027] The constant temperature unit is used to control the temperature of the epitaxial equipment.

[0028] Wherein, the gas control module includes a concentration control unit and a flow control unit;

[0029] The concentration control unit is used to control the gas concentration of the epitaxial device;

[0030] The flow control unit is used to control the gas flow of the epitaxial equipment.

[0031] In a second aspect, a multilayer thin film growth control method in an epitaxial device is used in the multilayer thin film growth control system in the epitaxial device described in the first aspect, comprising the following steps:

[0032] The monitoring module detects the growth data of the epitaxial equipment;

[0033] The processing module controls the temperature control module and the gas control module based on the threshold data and the growth data;

[0034] The temperature control module and the gas control module control the growth of multi-layer thin films of the epitaxial device.

[0035] The present invention discloses a multilayer thin film growth control system in an epitaxial device, comprising a monitoring module, a threshold storage module, a processing module, a temperature control module and a gas control module, wherein the monitoring module, the threshold storage module, the temperature control module and the gas control module are connected to the processing module respectively; the monitoring module detects growth data of the epitaxial device; the threshold storage module stores threshold data of the growth of the multilayer thin film; the processing module controls the temperature control module and the gas control module based on the threshold data and the growth data; the temperature control module controls the temperature of the epitaxial device; the gas control module controls the gas concentration and gas flow of the epitaxial device, and when controlling the growth of the multilayer thin film in the epitaxial device, the growth data is obtained by detecting multiple detection points on the epitaxial device, and then the growth data is judged and processed based on the threshold data, and if the threshold value is exceeded, a control instruction is generated according to the threshold data to control the temperature control module and the gas control module, so as to realize the growth control of the multilayer thin film in the epitaxial device, thereby solving the problem that the yield of the epitaxial wafer is reduced due to the control of the reaction chamber by the staff through human experience when producing the epitaxial wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0037] Figure 1It is a schematic diagram of a multilayer thin film growth control system in an epitaxial device provided by the present invention.

[0038] Figure 2 is a schematic diagram of the monitoring module.

[0039] Figure 3 is a schematic diagram of a threshold storage module.

[0040] Figure 4 is a schematic diagram of the processing module.

[0041] Figure 5 is a schematic diagram of the temperature control module.

[0042] Figure 6 is a schematic diagram of the gas control module.

[0043] Figure 7 is a schematic diagram of an execution unit.

[0044] Figure 8 It is a flow chart of a multilayer thin film growth control method in an epitaxial device provided by the present invention.

[0045] 1-monitoring module, 2-threshold storage module, 3-processing module, 4-temperature control module, 5-gas control module, 11-test point setting unit, 12-detection unit, 13-data transmission unit, 21-input unit, 22-numbering unit, 23-storage unit, 31-query unit, 32-comparison unit, 33-generation unit, 34-execution unit, 41-heating unit, 42-cooling unit, 43-constant temperature unit, 51-concentration control unit, 52-flow control unit, 341-instruction analysis subunit, 342-first operation subunit, 343-second operation subunit. DETAILED DESCRIPTION

[0046] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0047] See also Figures 1 to 7 In a first aspect, the present invention provides a multilayer thin film growth control system in an epitaxial device, comprising a monitoring module 1, a threshold storage module 2, a processing module 3, a temperature control module 4 and a gas control module 5, wherein the monitoring module 1, the threshold storage module 2, the temperature control module 4 and the gas control module 5 are respectively connected to the processing module 3;

[0048] The monitoring module 1 is used to detect the growth data of the epitaxial device;

[0049] The threshold storage module 2 is used to store the threshold data of the multilayer thin film growth;

[0050] The processing module 3 controls the temperature control module 4 and the gas control module 5 based on the threshold data and the growth data;

[0051] The temperature control module 4 is used to control the temperature of the epitaxial device;

[0052] The gas control module 5 is used to control the gas concentration and gas flow of the epitaxial equipment.

[0053] In this embodiment, the monitoring module 1 detects the growth data of the epitaxial device; the threshold storage module 2 stores the threshold data of the growth of the multilayer thin film; the processing module 3 controls the temperature control module 4 and the gas control module 5 based on the threshold data and the growth data; the temperature control module 4 controls the temperature of the epitaxial device; the gas control module 5 controls the gas concentration and gas flow of the epitaxial device. When controlling the growth of the multilayer thin film in the epitaxial device, the growth data is obtained by detecting multiple detection points on the epitaxial device, and then the growth data is judged and processed based on the threshold data. If the threshold is exceeded, a control instruction is generated according to the threshold data to control the temperature control module 4 and the gas control module 5, so as to realize the control of the growth of the multilayer thin film in the epitaxial device, thereby solving the problem of reduced epitaxial wafer yield caused by the staff controlling the reaction chamber through human experience during the production of epitaxial wafers.

[0054] Further, the monitoring module 1 includes a test point setting unit 11, a detection unit 12 and a data transmission unit 13, and the test point setting unit 11, the detection unit 12 and the data transmission unit 13 are connected in sequence;

[0055] The test point setting unit 11 is used to set test points on the epitaxial device;

[0056] The detection unit 12 is used to perform growth data detection on the test point;

[0057] The data transmission unit 13 is used to transmit the growth data to the processing module 3 .

[0058] In this embodiment, the test point setting unit 11 sets test points on the epitaxial device, the detection unit 12 performs growth data detection on the test points, and the data transmission unit 13 transmits the growth data to the processing module 3 for subsequent processing.

[0059] Further, the threshold storage module 2 includes an input unit 21, a numbering unit 22 and a storage unit 23, and the input unit 21, the numbering unit 22 and the storage unit 23 are connected in sequence;

[0060] The input unit 21 is used to input threshold data;

[0061] The numbering unit 22 is used to number the threshold data;

[0062] The storage unit 23 is used to store the numbered threshold data.

[0063] In this embodiment, the administrator inputs the threshold data through the input unit 21 , the numbering unit 22 numbers the threshold data, and the storage unit 23 stores the numbered threshold data.

[0064] Further, the processing module 3 includes a query unit 31, a comparison unit 32, a generation unit 33 and an execution unit 34, and the query unit 31, the comparison unit 32, the generation unit 33 and the execution unit 34 are connected in sequence;

[0065] The query unit 31 is used to query the corresponding threshold data in the storage unit 23;

[0066] The comparison unit 32 compares the detection data based on the corresponding threshold data to obtain difference data;

[0067] The generating unit 33 generates a control instruction based on the difference data;

[0068] The execution unit 34 controls the temperature control module 4 and the gas flow control module based on the control instruction.

[0069] In this embodiment, the query unit 31 queries the corresponding threshold data in the storage unit 23 according to production requirements, the comparison unit 32 compares the detection data based on the corresponding threshold data to obtain difference data, the generation unit 33 generates a control instruction based on the difference data, and the execution unit 34 controls the temperature control module 4 and the gas flow control module based on the control instruction. The execution unit 34 includes an instruction analysis subunit 341, a first operation subunit 342 and a second operation subunit 343. The instruction analysis subunit 341 is used to read the temperature adjustment data and the gas adjustment data in the control instruction. The first operation subunit 342 controls the temperature control module 4 based on the temperature adjustment data, and the second operation subunit 343 controls the gas control module 5 based on the gas adjustment data.

[0070] Furthermore, the temperature control module 4 includes a temperature increasing unit 41, a temperature decreasing unit 42 and a constant temperature unit 43;

[0071] The temperature raising unit 41 is used to control the temperature raising of the epitaxial device;

[0072] The cooling unit 42 is used to control the temperature of the epitaxial device to decrease;

[0073] The constant temperature unit 43 is used to control the temperature of the epitaxial device.

[0074] In this embodiment, the temperature increasing unit 41 , the temperature decreasing unit 42 and the constant temperature unit 43 are used to control the temperature increase, temperature decrease and constant temperature of the epitaxial device respectively.

[0075] Furthermore, the gas control module 5 includes a concentration control unit 51 and a flow control unit 52;

[0076] The concentration control unit 51 is used to control the gas concentration of the epitaxial device;

[0077] The flow control unit 52 is used to control the gas flow of the epitaxial device.

[0078] In this embodiment, the concentration control unit 51 and the flow control unit 52 are used to control the gas concentration and gas flow of the epitaxial device respectively.

[0079] See also Figure 8 In a second aspect, a multilayer thin film growth control method in an epitaxial device is used in the multilayer thin film growth control system in the epitaxial device described in the first aspect, comprising the following steps:

[0080] S1 monitoring module 1 performs growth data detection on epitaxial equipment;

[0081] Specifically, the test point setting unit 11 sets a test point on the epitaxial device, the detection unit 12 performs growth data detection on the test point, and the data transmission unit 13 transmits the growth data to the processing module 3 for subsequent processing.

[0082] S2 The processing module 3 controls the temperature control module 4 and the gas control module 5 based on the threshold data and the growth data;

[0083] Specifically, the query unit 31 queries the corresponding threshold data in the storage unit 23 according to production requirements, the comparison unit 32 compares the detection data based on the corresponding threshold data to obtain difference data, the generation unit 33 generates a control instruction based on the difference data, and the execution unit 34 controls the temperature control module 4 and the gas flow control module based on the control instruction.

[0084] S3 The temperature control module 4 and the gas control module 5 control the growth of the multilayer thin film of the epitaxial device.

[0085] Specifically, the temperature increasing unit 41, the temperature decreasing unit 42 and the constant temperature unit 43 are respectively used to control the temperature increase, temperature decrease and constant temperature of the epitaxial equipment, and the concentration control unit 51 and the flow control unit 52 are respectively used to control the gas concentration and gas flow of the epitaxial equipment.

[0086] What is disclosed above is only a preferred embodiment of a multilayer thin film growth control system and method in an epitaxial device of the present invention. Of course, this cannot be used to limit the scope of rights of the present invention. Ordinary technicians in this field can understand that all or part of the processes of the above embodiments and equivalent changes made in accordance with the claims of the present invention still fall within the scope of the invention.

Claims

1. A multilayer thin film growth control system in an epitaxial device, characterized in that: It includes a monitoring module, a threshold storage module, a processing module, a temperature control module and a gas control module, wherein the monitoring module, the threshold storage module, the temperature control module and the gas control module are respectively connected to the processing module; The monitoring module is used to detect the growth data of the epitaxial device; The threshold storage module is used to store threshold data of multi-layer thin film growth; The processing module controls the temperature control module and the gas control module based on the threshold data and the growth data; The temperature control module is used to control the temperature of the epitaxial device; The gas control module is used to control the gas concentration and gas flow of the epitaxial equipment.

2. The multilayer thin film growth control system in the epitaxial device according to claim 1, characterized in that: The monitoring module comprises a test point setting unit, a detection unit and a data transmission unit, wherein the test point setting unit, the detection unit and the data transmission unit are connected in sequence; The test point setting unit is used to set test points on the epitaxial device; The detection unit is used to perform growth data detection on the test point; The data transmission unit is used to transmit the growth data to the processing module.

3. The multilayer thin film growth control system in the epitaxial device according to claim 2, characterized in that: The threshold storage module comprises an input unit, a numbering unit and a storage unit, wherein the input unit, the numbering unit and the storage unit are connected in sequence; The input unit is used to input threshold data; The numbering unit is used to number the threshold data; The storage unit is used to store the numbered threshold data.

4. The multilayer thin film growth control system in the epitaxial device according to claim 3, characterized in that: The processing module includes a query unit, a comparison unit, a generation unit and an execution unit, and the query unit, the comparison unit, the generation unit and the execution unit are connected in sequence; The query unit is used to query the corresponding threshold data in the storage unit; The comparison unit compares the detection data based on the corresponding threshold data to obtain difference data; The generating unit generates a control instruction based on the difference data; The execution unit controls the temperature control module and the gas flow control module based on the control instruction.

5. The multilayer thin film growth control system in the epitaxial device according to claim 4, characterized in that: The temperature control module includes a temperature increasing unit, a temperature decreasing unit and a constant temperature unit; The temperature raising unit is used to control the temperature raising of the epitaxial device; The temperature reduction unit is used to control the temperature of the epitaxial device to decrease; The constant temperature unit is used to control the temperature of the epitaxial equipment.

6. The multilayer thin film growth control system in the epitaxial device according to claim 5, characterized in that: The gas control module includes a concentration control unit and a flow control unit; The concentration control unit is used to control the gas concentration of the epitaxial device; The flow control unit is used to control the gas flow of the epitaxial equipment.

7. A multilayer thin film growth control method in an epitaxial device, used in the multilayer thin film growth control system in the epitaxial device according to any one of claims 1 to 6, characterized in that: The following steps are involved: The monitoring module detects the growth data of the epitaxial equipment; The processing module controls the temperature control module and the gas control module based on the threshold data and the growth data; The temperature control module and the gas control module control the growth of multi-layer thin films of the epitaxial device.

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