Photoresist removal method and system

Abstract

The application belongs to the technical field of semiconductor, and particularly relates to a photoresist removing method and system. The removing method can comprise the following steps: providing a first deionized solution with a target concentration of carbon dioxide; immersing a wafer with a photoresist on a first surface in the first deionized solution under a first temperature and a first pressure condition for a target time length; and in response to the end of the target time length, flushing the wafer with a second deionized solution to obtain a target wafer with the photoresist removed. The scheme can effectively remove the photoresist by using conventional chemical reagents, thereby reducing the difficulty of waste water treatment.

Description

Technical Field

[0001] This disclosure belongs to the field of semiconductor technology, and specifically relates to a method and system for removing photoresist. Background Technology

[0002] In the manufacturing process of semiconductor devices, photolithography is usually used to create patterns. This involves coating a wafer with photoresist, then shining ultraviolet light through a photomask onto the wafer. After processes such as development, etching, and photoresist removal, the pattern on the photomask can be transferred onto the wafer.

[0003] Currently, a mixture of sulfuric acid and hydrogen peroxide is commonly used to remove photoresist. The mixture of sulfuric acid and hydrogen peroxide generates heat, causing the cleaning solution temperature to rise. The high-temperature cleaning solution is then sprayed onto the photoresist surface of the wafer substrate, where it erodes and dissolves the photoresist. Finally, the wafer is rinsed with deionized water to remove the cleaning solution, thus achieving photoresist removal. This photoresist removal method uses hazardous chemical reagents. Summary of the Invention

[0004] This application provides a method and system for removing photoresist, which solves the problem that existing photoresist removal methods use hazardous chemical reagents. This application can effectively remove photoresist using conventional chemical reagents, thereby reducing the difficulty of wastewater treatment.

[0005] In a first aspect, this application provides a photoresist removal method, the removal method comprising: providing a first deionized solution having a target concentration of carbon dioxide; immersing a wafer with photoresist on its first surface in the first deionized solution for a target time under a first temperature and a first pressure condition; and rinsing the wafer with a second deionized solution in response to the end of the target time to obtain a target wafer with the photoresist removed.

[0006] Optionally, before immersing the wafer with photoresist on its first surface in the deionized solution for a target time under first temperature and first pressure conditions, the method further includes irradiating the first surface of the wafer with ultraviolet light.

[0007] Optionally, a first deionized solution with a target concentration of carbon dioxide is provided, comprising: introducing carbon dioxide gas into deionized water through a gas path for mixing to obtain mixed deionized water with a target concentration of carbon dioxide; heating and pressurizing the mixed deionized water to obtain the first deionized solution under a second temperature and a second pressure condition.

[0008] Optionally, under the conditions of a first temperature and a first pressure, immersing a wafer with photoresist on its first surface in the first deionized solution for a target duration includes: placing the second surface of the wafer on a heating seat of an immersion apparatus; wherein the second surface is disposed opposite to the first surface; when the immersion apparatus is pressurized to a first pressure and the heating seat is heated to the first temperature, spraying the first deionized solution onto the second surface of the wafer until the wafer is completely immersed in the first deionized solution; and immersing the wafer in the first deionized solution for the target duration.

[0009] Optionally, the wavelength of the ultraviolet light includes 175–250 nm; or / and the target duration includes 2–60 minutes.

[0010] Optionally, the target concentration includes 0.5% to 2%.

[0011] Optionally, the first temperature includes 100°C to 250°C and / or the first pressure includes 400 psi to 950 psi; or / and the second temperature includes 100°C to 250°C and / or the second pressure includes 400 psi to 950 psi.

[0012] Secondly, this application provides a photoresist removal system, which may include: a solution generation device for providing a first deionized solution having a target concentration of carbon dioxide; an immersion device connected to the solution generation device for immersing a wafer with photoresist on its first surface in the first deionized solution for a target time under a first temperature and a first pressure condition; and further for rinsing the wafer with a second deionized solution in response to the end of the target time to obtain a target wafer with the photoresist removed.

[0013] Optionally, the solution generating device includes: a mixing device for mixing carbon dioxide gas and deionized water to generate mixed deionized water with a target concentration of carbon dioxide; and a pressurizing and heating device for pressurizing and heating the mixed deionized water output by the mixing device to generate the first deionized solution under a second temperature and a second pressure.

[0014] Optionally, the immersion apparatus includes: a pressurizing device for pressurizing the atmospheric pressure inside the immersion apparatus to a first pressure value; a heating seat for supporting the wafer and heating the wafer to a first temperature; and a solution nozzle disposed on the heating seat, interconnected with the pressurizing heating device, for spraying a first deionized solution output by the pressurizing heating device onto a second surface of the wafer.

[0015] The technical solution provided in this application has at least the following beneficial effects:

[0016] By immersing a wafer with photoresist on its first surface in a first deionized solution containing a target concentration of carbon dioxide for a target duration under first temperature and first pressure conditions, carbon dioxide can penetrate into the photoresist, causing it to expand. The expanded photoresist generates film stress, leading to photoresist cracking. Finally, the reagents and impurities adhering to the wafer surface are removed using a second deionized solution, thus achieving photoresist removal. In this removal method, both the first deionized solution containing the target concentration of carbon dioxide and the second deionized solution used for cleaning are conventional chemical reagents, which reduces the difficulty of wastewater treatment compared to the hazardous chemical reagents used in existing technologies. Furthermore, the first temperature and first pressure conditions can accelerate the carbon dioxide penetration rate, thereby improving the photoresist removal efficiency. Attached Figure Description

[0017] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0018] Figure 1 The diagram shown is a schematic flowchart of a photoresist removal method provided in an embodiment of this application.

[0019] Figure 2 The diagram shown is a schematic diagram of a photoresist removal system provided in an embodiment of this application.

[0020] Figure 3 The diagram shown is a flowchart of another photoresist removal method provided in an embodiment of this application.

[0021] Figure 4 As shown Figure 1 A flowchart of step S102.

[0022] Explanation of reference numerals in the attached figures:

[0023] 10. Solution generation equipment; 11. Mixing device; 12. Pressurized heating device;

[0024] 20. Soaking equipment; 21. Pressurization device; 22. Heating base; 23. Solution nozzle; 24. Ultraviolet lamp;

[0025] 30. Solution recovery device;

[0026] 100. Wafer. Detailed Implementation

[0027] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0028] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0029] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present application, and should not be construed as limiting the present application.

[0030] In a first aspect, this application provides a method for removing photoresist, specifically including the following embodiments:

[0031] Example 1

[0032] Figure 1 The diagram shown is a schematic flowchart of a photoresist removal method provided in an embodiment of this application; as follows: Figure 1 As shown, the removal method specifically includes the following steps:

[0033] Step S101: Provide a first deionized solution with a target concentration of carbon dioxide;

[0034] In this embodiment, providing a first deionized solution with a target concentration of carbon dioxide specifically includes the following steps: introducing carbon dioxide gas into deionized water through a gas path for mixing to obtain mixed deionized water with a target concentration of carbon dioxide; heating and pressurizing the mixed deionized water to obtain the first deionized solution under a second temperature and a second pressure condition.

[0035] It should be noted that the process for preparing the first deionized solution containing the target concentration of carbon dioxide is as follows: Figure 2 As shown:

[0036] First, carbon dioxide gas from the carbon dioxide storage tank is introduced into the mixing device through a gas path. Simultaneously, deionized water from the deionized water storage tank is introduced into the mixing device through a pipeline to mix with a certain proportion of carbon dioxide, thereby ensuring that the mixed deionized water in the mixing device has a target concentration of carbon dioxide. A water flow meter is installed between the pipeline of the mixing device and the deionized water storage tank, and an air flow meter is installed between the gas path of the mixing device and the carbon dioxide storage tank. Under the joint monitoring of the water flow meter and the air flow meter, the concentration of carbon dioxide dissolved in the deionized water in the mixing device can be controlled. The specific control method can refer to the existing technology, which will not be elaborated here.

[0037] In this embodiment, the concentration of carbon dioxide in the first deionized solution affects the dissolution rate of the photoresist. The target concentration includes 0.5% to 2%, such as 0.5%, 0.75%, 1%, 1.5%, and 2%, and its specific value can be adjusted according to the thickness of the photoresist.

[0038] Then, the mixed deionized water with the target concentration of carbon dioxide in the mixing device is input into the pressurized heating device to pressurize and heat the mixed deionized water, so that the mixed solution reaches a high temperature and high pressure state with a second temperature and a second pressure. The second temperature and the second pressure affect the dissolution rate of the photoresist by the first deionized solution. The second temperature includes 100℃ to 250℃, and the second pressure includes 400psi to 950psi. For example, the second temperature is 100℃, 150℃, 175℃, 200℃ and 250℃, and the second pressure is 400psi, 500psi, 600psi, 650psi, 700psi, 850psi and 900psi, etc. The specific values ​​of temperature and pressure are adjusted according to the thickness of the photoresist.

[0039] Step S102: Under the conditions of first temperature and first pressure, immerse the wafer with photoresist on the first surface in the first deionized solution for a target time.

[0040] It should be noted that in this embodiment, the first temperature and the second temperature have the same range, that is, the first temperature range is 100℃ to 250℃, such as 100℃, 150℃, 175℃, 200℃ and 250℃; similarly, the first pressure and the second pressure in this embodiment also have the same range, that is, the first pressure range is 400psi to 950psi, such as 400psi, 500psi, 600psi, 650psi, 700psi, 850psi and 900psi.

[0041] In this embodiment, the first temperature is preferably 200°C, and the first pressure is preferably 850 psi (5861 kPa). This temperature and pressure create high-temperature and high-pressure conditions. Under these conditions, carbon dioxide in the deionized water can penetrate into the photoresist, causing it to expand. The expanded photoresist generates thin-film stress, leading to photoresist cracking. To completely remove the photoresist, the wafer can be immersed in the solution for 2 to 60 minutes, such as 2 minutes, 10 minutes, 15 minutes, 25 minutes, 30 minutes, 45 minutes, and 60 minutes. The immersion time affects the amount of photoresist residue and can be adjusted in real time according to the thickness of the photoresist.

[0042] Step S103: In response to the end of the target duration, the wafer is rinsed with a second deionized solution to obtain a target wafer with the photoresist removed.

[0043] It should be noted that after the wafer is immersed in the first deionized solution under high temperature and high pressure conditions for a period of time, the first deionized solution used to immerse the wafer is either recycled or the wafer is removed from the first deionized solution before the wafer is cleaned with the second deionized solution to remove the reagents and impurities adhering to the wafer surface, thereby obtaining a target wafer with completely removed photoresist. The second deionized solution can be the same as or different from the first deionized solution. The second deionized solution, which is different from the first deionized solution, can be ordinary deionized water with a cleaning effect, which reduces the cost compared to the first deionized solution.

[0044] The technical solution provided in this embodiment has at least the following beneficial effects:

[0045] By immersing a wafer with photoresist on its first surface in a first deionized solution containing a target concentration of carbon dioxide for a target duration under first temperature and first pressure conditions, carbon dioxide can penetrate into the photoresist, causing it to expand. The expanded photoresist generates film stress, leading to photoresist cracking. Finally, the photoresist is removed by using a second deionized solution to remove reagents and impurities adhering to the wafer surface. In this removal method, the first deionized solution containing the target concentration of carbon dioxide and the second deionized solution used for cleaning can effectively remove the photoresist. Furthermore, under the first temperature and first pressure conditions, the penetration rate of carbon dioxide can be accelerated, thereby improving the photoresist removal efficiency.

[0046] Therefore, the photoresist removal method provided in this embodiment can effectively remove photoresist using conventional chemical reagents.

[0047] Example 2

[0048] Figure 3The diagram shown is a schematic flowchart of another photoresist removal method provided in an embodiment of this application; as follows: Figure 3 As shown, the removal method specifically includes the following steps:

[0049] Step S201: Provide a first deionized solution with a target concentration of carbon dioxide;

[0050] Step S202: Irradiate the first surface of the wafer with ultraviolet light;

[0051] Step S203: Under the conditions of first temperature and first pressure, immerse the wafer with photoresist on the first surface in the first deionized solution for a target time.

[0052] In step S204, in response to the end of the target duration, the wafer is rinsed with a second deionized solution to obtain a target wafer with the photoresist removed.

[0053] Steps S201, S203, and S204 in this embodiment are entirely identical in principle to steps S101, S102, and S103 in the first embodiment described above, and will not be repeated here. The difference between this embodiment and the first embodiment is that, under the first temperature and first pressure conditions, before immersing the wafer with photoresist on its first surface in the deionized solution for the target time, the first surface of the wafer needs to be irradiated with ultraviolet light (i.e., step S202). Step S202 will be explained in detail below:

[0054] In the fabrication of semiconductor devices, there is an ion implantation process, which involves coating a patterned photoresist on the first surface of a wafer and then implanting ions into the first surface of the wafer. The ions are also implanted into the outer surface of the photoresist at the same time, causing the photoresist to cross-link and form a carbonized top layer. This carbonized top layer increases the difficulty of removing the photoresist.

[0055] It should be noted that during ion implantation, carbonization only occurs on the top and sidewalls of the photoresist, and amorphous carbon does not form in the middle layer of the photoresist.

[0056] In order to quickly and effectively remove the carbonized photoresist on the top layer, this embodiment uses ultraviolet light to irradiate the carbonized photoresist top layer, which will cause the carbonized shell to crack, thereby making the subsequent high-temperature and high-pressure water containing a specific concentration of CO2 to dissolve the photoresist more efficient.

[0057] In this embodiment, the wavelength of the ultraviolet light is preferably 175–250 nm, such as 175 nm, 200 nm, or 250 nm, and the ultraviolet light power density is 200 mW / cm². 2 The radiation dose is 10–30 J / cm². 2 For example, 10J / cm2 20J / cm 2 25J / cm 2 and 30J / cm 2 Among these, the duration of ultraviolet (UV) irradiation is negatively correlated with the UV radiation dose; that is, the higher the radiation dose, the shorter the irradiation duration, and the lower the radiation dose, the longer the irradiation duration. It can be adjusted according to the actual irradiation conditions.

[0058] Example 3

[0059] Figure 4 As shown Figure 1 A flowchart of step S102 is shown below; Figure 4 As shown, under the conditions of a first temperature and a first pressure, immersing a wafer with photoresist on its first surface in the first deionized solution for a target duration specifically includes the following steps:

[0060] Step S1021: Place the second surface of the wafer on the heating seat of an immersion apparatus.

[0061] The second surface is disposed opposite to the first surface;

[0062] Step S1022: When the immersion device is pressurized to the first pressure and the heating seat is heated to the first temperature, the first deionized solution is sprayed onto the second surface of the wafer until the wafer is completely immersed in the first deionized solution.

[0063] Step S1023: Immerse the wafer in the first deionized solution for the target time.

[0064] A schematic diagram of the soaking device in this embodiment is shown below. Figure 2 As shown, the immersion device 20 includes: a pressurizing device 21 for pressurizing the atmospheric pressure inside the immersion device to a first pressure value, a heating seat 22 for carrying the wafer and heating the wafer to a first temperature, and a solution nozzle 23 disposed on the heating seat; wherein the solution nozzle 23 is interconnected with the pressurizing heating device 12 and is used to spray the first deionized solution output by the pressurizing heating device 12 onto the second surface of the wafer.

[0065] It should be noted that the wafer in this application has a first surface and a second surface arranged opposite to each other. The first surface is coated with a patterned photoresist of a certain thickness and has a polysilicon gate structure, etc. The second surface of the wafer to be dephotoresisted is placed on the heating seat of the immersion equipment. The heating seat has temperature monitoring and control functions and can heat the surface temperature of the wafer to a preset first temperature condition. At the same time, the pressurization device in the immersion equipment also adjusts the atmospheric pressure in the chamber until the first pressure condition is reached.

[0066] When the atmospheric pressure inside the immersion equipment is equal to the atmospheric pressure of the pressurized heating device, and the temperature of the wafer surface is also equal to the temperature of the pressurized heating device, the first deionized solution in the pressurized heating device is sprayed onto the second surface of the wafer through the solution nozzle until the wafer is completely immersed in the solution, at which point the spraying stops. Controlling the spraying flow rate of the first deionized solution through the solution nozzle can reduce the impact of the solution on the wafer pattern. Furthermore, the spraying of the solution is only controlled when the atmospheric pressure inside the immersion equipment and the temperature of the wafer surface are the same as the temperature and pressure conditions of the pressurized heating device. This allows the carbon dioxide in the solution to quickly penetrate into the photoresist, thereby increasing the expansion rate of the photoresist and achieving the goal of improving the photoresist removal efficiency.

[0067] Finally, immersing the wafer in the first deionized solution for the target time allows the carbon dioxide in the solution to fully penetrate the photoresist, improving the photoresist removal effect. The target time includes 2 to 60 minutes, such as 2 minutes, 10 minutes, 15 minutes, 25 minutes, 30 minutes, 45 minutes, and 60 minutes, with 30 minutes being the preferred setting. The specific immersion time is adjusted in real time according to the thickness of the photoresist.

[0068] Secondly, this application provides a photoresist removal system, specifically including the following embodiments:

[0069] Example 4

[0070] Figure 2 The diagram shown is a structural schematic of a photoresist removal system provided in an embodiment of this application; as shown Figure 2 As shown, the removal system includes:

[0071] Solution generating device 10 is used to provide a first deionized solution with a target concentration of carbon dioxide;

[0072] The immersion device 20, connected to the solution generating device 10, is used to immerse a wafer 100 with photoresist on its first surface in the first deionized solution for a target time under a first temperature and a first pressure condition; and is also used to rinse the wafer 100 with a second deionized solution in response to the end of the target time to obtain a target wafer with the photoresist removed.

[0073] Optionally, the solution generating device 10 includes:

[0074] The mixing device 11 is used to mix carbon dioxide gas and deionized water to generate mixed deionized water with a target concentration of carbon dioxide.

[0075] The pressurized heating device 12 is used to pressurize and heat the mixed deionized water output by the mixing device 11 to generate the first deionized solution under the second temperature and second pressure conditions.

[0076] Optionally, the soaking device 20 includes:

[0077] The pressurization device 21 is used to increase the atmospheric pressure inside the soaking equipment to a first pressure value;

[0078] Heating seat 22 is used to hold the wafer 100 and heat the wafer 100 to a first temperature;

[0079] A solution nozzle 23 disposed on the heating base 22 is interconnected with the pressurized heating device 12 and is used to spray the first deionized solution output by the pressurized heating device 12 onto the second surface of the wafer 100.

[0080] In one embodiment of this application, the immersion apparatus 20 further includes an ultraviolet lamp 24 disposed above the heating seat 22 for irradiating the first surface of the wafer 100 placed on the heating seat 22 with ultraviolet light.

[0081] In another embodiment of this application, the immersion device 20 further includes a cleaning nozzle (not shown in the figure) disposed above the heating base 22 for rinsing the wafer 100 placed on the heating base 22; wherein, during the rinsing process, the heating base has a lifting function, raising the wafer to completely remove it from the first deionized solution, and then using the cleaning nozzle to rinse the wafer to remove residues and the first deionized solution from the outer surface of the wafer, and the cleaning solution sprayed in the cleaning nozzle is a second deionized solution, i.e., deionized water.

[0082] In another embodiment of this application, the removal system further includes a solution recovery device 30, which is interconnected with the heating seat 22. After the wafer has been immersed in the first deionized solution for a target time, or after the wafer has been rinsed, the solution recovery device 30 is used to recover the solution in the heating seat 22. The solution recovery device 30 can recover the solution by suction or by opening the gate of the heating seat 22.

[0083] The technical solution provided in this embodiment has at least the following beneficial effects:

[0084] 1. A first deionized solution with a target concentration of carbon dioxide can be obtained through a solution generation device. In an immersion device under first temperature and first pressure conditions, a wafer with photoresist on its first surface is immersed in the first deionized solution containing the target concentration of carbon dioxide for a target duration. Under these conditions, carbon dioxide can penetrate into the photoresist, causing it to expand. The expanded photoresist generates thin-film stress, leading to photoresist cracking. Finally, a second deionized solution removes reagents and impurities adhering to the wafer surface, thus achieving photoresist removal. In this removal method, both the first deionized solution containing the target concentration of carbon dioxide and the second deionized solution used for cleaning are conventional chemical reagents, reducing the difficulty of wastewater treatment compared to the hazardous chemical reagents used in existing technologies. Furthermore, under the first temperature and first pressure conditions, the carbon dioxide penetration rate can be accelerated, thereby improving the photoresist removal efficiency.

[0085] 2. By irradiating the carbonized photoresist top layer with ultraviolet light in the immersion equipment, the carbonized outer shell will crack, thereby making the subsequent high-temperature and high-pressure water containing a certain concentration of CO2 to dissolve the photoresist more efficient.

[0086] Furthermore, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0087] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0088] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application. Therefore, any changes or modifications made in accordance with the claims and description of this application should fall within the scope of this patent application.

Claims

1. A photoresist removal method characterized by, The removing method comprises: providing a first deionized solution with a target concentration of carbon dioxide; comprising: introducing carbon dioxide gas into deionized water through a gas path for mixing to obtain mixed deionized water with a target concentration of carbon dioxide; heating and pressurizing the mixed deionized water to obtain the first deionized solution under a second temperature and a second pressure; wherein the target concentration comprises 0.5% to 2%, the second temperature comprises 100°C to 250°C, and the second pressure comprises 400psi to 950psi; immersing a wafer with photoresist on a first surface in the first deionized solution for a target duration under a first temperature and a first pressure; wherein the first temperature comprises 100°C to 250°C, and the first pressure comprises 400psi to 950psi; in response to the end of the target duration, using a second deionized solution to rinse the wafer to obtain a target wafer with photoresist removed.

2. The photoresist removal method according to claim 1, wherein Before immersing a wafer with photoresist on a first surface in the first deionized solution for a target duration under a first temperature and a first pressure, the method further comprises: irradiating the first surface of the wafer with ultraviolet light.

3. The photoresist removal method according to claim 1, wherein Immersing a wafer with photoresist on a first surface in the first deionized solution for a target duration under a first temperature and a first pressure comprises: placing a second surface of the wafer on a heating seat of an immersion device; wherein the second surface is oppositely arranged with the first surface; when the immersion device is pressurized to a first pressure and the heating seat is heated to the first temperature, spraying the first deionized solution on the second surface of the wafer until the wafer is completely immersed in the first deionized solution; immersing the wafer in the first deionized solution for a target duration.

4. The photoresist removing method of claim 2, wherein: the wavelength of the ultraviolet light comprises 175nm to 250nm; or / and, the target duration comprises 2 to 60 minutes.

5. A photoresist removal system, comprising: The removing system comprises: a solution generating device for providing a first deionized solution with a target concentration of carbon dioxide; an immersion device connected with the solution generating device, for immersing a wafer with photoresist on a first surface in the first deionized solution for a target duration under a first temperature and a first pressure; and for using a second deionized solution to rinse the wafer to obtain a target wafer with photoresist removed in response to the end of the target duration; wherein the first temperature comprises 100°C to 250°C, and the first pressure comprises 400psi to 950psi; wherein the solution generating device comprises: a mixing device for mixing carbon dioxide gas and deionized water to generate mixed deionized water with a target concentration of carbon dioxide; wherein the target concentration comprises 0.5% to 2%. A pressurized heating device is configured to pressurize and heat the mixed deionized water output from the mixing device to generate the first deionized solution under a second temperature and a second pressure; the second temperature comprises 100°C-250°C, and the second pressure comprises 400 psi-950 psi.

6. The photoresist removal system of claim 5, wherein, The soaking apparatus comprises: A pressurizing device is configured to pressurize the atmospheric pressure in the soaking apparatus to a first pressure value; A heating seat is configured to support the wafer and heat the wafer to a first temperature; A solution nozzle is disposed on the heating seat and is interconnected with the pressurized heating device, and is configured to spray the first deionized solution output from the pressurized heating device onto the second surface of the wafer.

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