Method of manufacturing magnetic memory device

Abstract

According to a method of manufacturing a magnetic memory device, various types of magnetic memory devices can be manufactured at low cost by manufacturing a plurality of magnetic modules using a layering phenomenon of pattern segments and stacking the plurality of magnetic modules to complete a stacked memory device.

Description

Technical Field

[0001] The inventive concept relates to a method of manufacturing a magnetic memory device, and more particularly, to a method of manufacturing a magnetic memory device including a race track. Background Art

[0002] In order to meet the demand for miniaturization, multi-function and high performance of electronic products, people are developing large-capacity storage devices. In order to provide large capacity, a racetrack including multiple magnetic domains and storing information by moving the magnetic domain walls between the magnetic domains has been proposed. Similarly, people are developing magnetic domain wall shift register type storage devices including such racetracks. Various methods are being proposed to manufacture high-integration magnetic storage devices at low cost. Summary of the invention

[0003] The inventive concept provides a method of manufacturing a magnetic memory device, whereby various types of magnetic memory devices can be manufactured at low cost by manufacturing a plurality of magnetic modules using a delamination phenomenon of pattern segments and stacking the plurality of magnetic modules to complete a stacked memory device.

[0004] Problems to be solved by the present inventive concept are not limited to the above-mentioned problems, and other unmentioned problems will be clearly understood by those of ordinary skill in the art from the following description.

[0005] According to one aspect of the present invention, a method for manufacturing a magnetic memory device is provided, the method comprising: forming a first pattern segment on an upper surface of a base substrate; forming a first film stack on the upper surface of the base substrate and the first pattern segment, the first film stack comprising at least one magnetic layer; forming a first stack segment by layering the first pattern segment and a portion of the first film stack overlapping the first pattern segment; disposing the first stack segment on the upper surface of the stack substrate; patterning the first stack segment to form a first magnetic module constituting a first part of the magnetic memory device; forming a second magnetic module constituting a second part of the magnetic memory device by forming a second pattern segment, forming a second film stack comprising at least one magnetic layer on the second pattern segment, forming a second stack segment by layering the second pattern segment and a portion of the second film stack overlapping the second pattern segment, and patterning the second stack segment; and coupling the second magnetic module to the first magnetic module.

[0006] According to another aspect of the inventive concept, there is provided a method for manufacturing a magnetic memory device, the method comprising: forming each of a first magnetic module, a second magnetic module, and a third magnetic module constituting the magnetic memory device; picking up the first magnetic module by setting an adhesive stamp on the first magnetic module; attaching the second magnetic module below the first magnetic module attached to the adhesive stamp; attaching the third magnetic module below the second magnetic module and opposite to the first magnetic module attached to the adhesive stamp; and separating the adhesive stamp from the first magnetic module. Each of the first magnetic module, the second magnetic module, and the third magnetic module includes a corresponding pattern segment in which a two-dimensional sheet containing hexagonal boron nitride is stacked in a plurality of layers.

[0007] According to another aspect of the inventive concept, there is provided a method for manufacturing a magnetic memory device, the method comprising: forming each of a first magnetic module, a second magnetic module, and a third magnetic module constituting the magnetic memory device; picking up the first magnetic module by setting an adhesive stamp on the first magnetic module, attaching the first magnetic module to an upper surface of a stacked substrate, and separating the adhesive stamp from the first magnetic module; picking up the second magnetic module by setting the adhesive stamp on the second magnetic module, attaching the second magnetic module to the first magnetic module, and separating the adhesive stamp from the second magnetic module; picking up the third magnetic module by setting the adhesive stamp on the third magnetic module, attaching the third magnetic module to the second magnetic module, and separating the adhesive stamp from the third magnetic module. Each of the first magnetic module, the second magnetic module, and the third magnetic module includes a corresponding pattern segment in which a two-dimensional sheet containing hexagonal boron nitride is stacked in a plurality of layers. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0009] Figure 1 is a flow chart illustrating a method for manufacturing a magnetic memory device according to an embodiment;

[0010] Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 and Fig.10 is a perspective view illustrating a method for manufacturing a magnetic memory device according to an embodiment in process order;

[0011] Fig.11 is a flow chart illustrating a method for manufacturing a magnetic memory device according to another embodiment;

[0012] Fig. 12A , Fig. 12B , Fig. 12C , Fig.12D , Fig.12E and Fig.12F is a perspective view illustrating a method for manufacturing a magnetic memory device according to another embodiment in process order;

[0013] Fig.13 is a flow chart illustrating a method for manufacturing a magnetic memory device according to another embodiment;

[0014] Fig.14A , Fig. 14B , Fig. 14C , Fig.14D , Fig.14E , Fig.14F and Figure 14G is a perspective view illustrating a method for manufacturing a magnetic memory device according to another embodiment in process order; and

[0015] Fig.15 is a perspective view illustrating a stack structure of a magnetic memory device according to an embodiment. DETAILED DESCRIPTION

[0016] In the following, embodiments will be described in detail with reference to the accompanying drawings. The terms "comprises", "comprising", "including" and / or "comprising" when used herein specify the presence of stated elements, but do not exclude the presence of additional elements. The term "and / or" includes any and all combinations of one or more of the associated enumerated items. Components or layers described with reference to "overlapping" in a particular direction may at least partially obstruct each other when viewed along a line extending in a particular direction or in a plane perpendicular to a particular direction.

[0017] Figure 1 is a flowchart illustrating a method of manufacturing a magnetic memory device according to an embodiment.

[0018] refer to Figure 1 , the magnetic memory device manufacturing method S10 may include a process sequence of a first operation S110 to a seventh operation S170. The terms "first", "second", etc. may be used herein only to distinguish one component, layer, direction, operation, etc. from another component, layer, direction, operation, etc.

[0019] Some embodiments may be implemented differently than shown and described in the examples herein. For example, a particular process order may be performed differently than the order described or the order illustrated in the flowchart. For example, two processes described or illustrated in succession may be performed substantially simultaneously, or two processes described or illustrated in succession may be performed in an order opposite to that described or illustrated.

[0020] The magnetic memory device manufacturing method S10 according to the present invention may include: a first operation S110 of forming a pattern segment on the upper surface of a base substrate; a second operation S120 of forming a film stack covering the entirety of the upper surface of the base substrate and the pattern segment and including at least one magnetic layer; a third operation S130 of forming a stack segment by layering the pattern segment and the film stack (or a portion thereof) overlapping the pattern segment; a fourth operation S140 of arranging the stack segment on the upper surface of the stack substrate; a fifth operation S150 of forming a first magnetic module constituting a portion (e.g., a first portion) of a magnetic memory device by patterning the stack segment; a sixth operation S160 of forming a second magnetic module constituting another portion (e.g., a second portion) of the magnetic memory device by repeating the first operation S110 to the fifth operation S150 in the same or similar manner; and a seventh operation S170 of coupling the second magnetic module to the first magnetic module.

[0021] Will be referenced below Figures 2 to 10 Technical features of each of the first to seventh operations S110 to S170 are described in detail.

[0022] Figures 2 to 10 is a perspective view illustrating a method for manufacturing a magnetic memory device according to an embodiment in process order.

[0023] refer to Figure 2 , a plurality of pattern segments 110 may be formed on an upper surface of the base substrate 100 .

[0024] In some embodiments, the base substrate 100 may be a wafer including silicon (Si) (eg, crystalline silicon, polycrystalline silicon, or amorphous silicon). In some embodiments, the base substrate 100 may be a wafer including, for example, glass, silicon, or aluminum oxide.

[0025] The plurality of pattern segments 110 may be arranged to be spaced apart from each other on the upper surface of the base substrate 100. In some embodiments, the plurality of pattern segments 110 may have a structure in which two-dimensional sheets containing hexagonal boron nitride (h-BN) are stacked in a plurality of layers. That is, the pattern segment 110 may have a stacked structure including a plurality of layers of a two-dimensional sheet containing h-BN.

[0026] In particular, boron nitride can be a composition including boron (B) and nitrogen (N) in equal proportions, and can have hexagonal, cubic and wurtzite crystal forms. Here, hexagonal boron nitride (h-BN) can be a material with high thermal conductivity, excellent chemical stability, thermal shock resistance and excellent mechanical strength. Hexagonal boron nitride (h-BN) can have a single-layer material structure including boron (B) atoms and nitrogen (N) atoms in a hexagonal lattice structure, i.e., a two-dimensional sheet structure. In this regard, hexagonal boron nitride (h-BN) can be similar to graphene including carbon (C) atoms in a hexagonal lattice structure. As described below, the magnetic memory device manufacturing method conceived by the present invention can be described and implemented by using the layered characteristics of hexagonal boron nitride (h-BN).

[0027] In the plurality of pattern segments 110, the two-dimensional sheet structure in which the hexagonal lattice structure is repeated may mean that boron (B) atoms and nitrogen (N) atoms are covalently bonded to form a honeycomb structure. In some embodiments, in the plurality of pattern segments 110, the stacked structure of hexagonal boron nitride (h-BN) may include a structure in which an upper hexagonal lattice structure and a lower hexagonal lattice structure are alternately arranged. In some embodiments, in the plurality of pattern segments 110, the stacked structure of hexagonal boron nitride (h-BN) may include a structure in which an upper hexagonal lattice structure and a lower hexagonal lattice structure overlap each other.

[0028] refer to Figure 3 , a film stack 120S may be formed that covers all and a plurality of pattern segments 110 up to the upper surface of the base substrate 100 and includes at least one magnetic layer. The term "covering" as may be used herein may not require completely covering the described element or layer, but may refer to partially covering the described element or layer, for example.

[0029] The film stack 120S may include, for example, first, second, and third film layers 121L, 122L, and 123L sequentially stacked over the base substrate 100. Here, at least one of the first, second, and third film layers 121L, 122L, and 123L may include a magnetic layer having a magnetic element.

[0030] In some embodiments, in the first film layer 121L, the film stack 120S may be formed as a current layer, the second film layer 122L may be formed as a magnetic layer, and the third film layer 123L may be formed as a wiring layer.

[0031] In particular, the first film layer 121L may have a current layer for generating a spin-orbit moment (SOT) by a current flowing in the first film layer 121L. In some embodiments, the first film layer 121L may include a material capable of generating a spin Hall effect or a Rashba effect by a current flowing in the first film layer 121L. Similarly, the first film layer 121L may include a heavy metal having an atomic number of 30 or greater. For example, the first film layer 121L may include iridium (Ir), ruthenium (Ru), tantalum (Ta), platinum (Pt), palladium (Pd), bismuth (Bi), titanium (Ti), or tungsten (W); however, the inventive concept is not limited thereto.

[0032] Likewise, the second film layer 122L may include a magnetic track layer. For example, the second film layer 122L may include at least one of cobalt (Co), iron (Fe), and nickel (Ni); however, the inventive concept is not limited thereto. The second film layer 122L may include magnetic domains (not shown) and magnetic domain walls (not shown) located between the magnetic domains. In the second film layer 122L, a magnetic domain may be a region where a magnetic moment is aligned in a specific direction. Likewise, in the second film layer 122L, a magnetic domain wall may be a region where a direction of a magnetic moment changes between magnetic domains. In the second film layer 122L, magnetic domains and magnetic domain walls may be arranged alternately.

[0033] Likewise, the third film layer 123L may include a read line layer and / or a write line layer. The third film layer 123L may include, for example, copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), palladium (Pd), platinum (Pt), molybdenum (Mo), metal silicide, or any combination thereof; however, the inventive concept is not limited thereto.

[0034] Here, each of the first film layer 121L, the second film layer 122L, and the third film layer 123L may be formed by using a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, or an atomic layer deposition (ALD) process.

[0035] refer to Figure 4 , the stack segment F1 may be formed by layering the pattern segment 110 and the film stack 120S of the portion overlapping the pattern segment 110 .

[0036] By using the adhesive stamp SP over the portion of the film stack 120S overlapping the pattern segment 110 among the plurality of pattern segments 110, some layers of the film stack 120S may be removed by delaminating some layers of the two-dimensional sheet including hexagonal boron nitride (h-BN) constituting the pattern segment 110. That is, the adhesive stamp SP may adhere to the portion of the film stack 120S overlapping the pattern segment 110, and lifting of the adhesive stamp SP may delaminate the portion of the film stack 120S and the pattern segment 110.

[0037] In more detail, the pattern segment 110 may include multiple layers of two-dimensional sheets, which may be coupled to each other by Van der Waals forces between the two-dimensional sheets. Because the bonding force of the bonding stamp SP is greater than the Van der Waals force, some layers of the two-dimensional sheet may be layered with other layers. In this way, the two-dimensional shape of the stacking segment F1 picked up by the bonding stamp SP may be similar to the two-dimensional shape of the pattern segment 110.

[0038] refer to Figure 5 , the stack segment F1 attached to the bonding stamp SP may be moved and arranged on the upper surface of the stack substrate 101 .

[0039] In some embodiments, the stacking substrate 101 may be a wafer including silicon (Si) (e.g., crystalline silicon, polycrystalline silicon, or amorphous silicon). In some embodiments, the stacking substrate 101 may be a wafer including, for example, glass, silicon, or aluminum oxide. Also, a marking pattern 102 indicating a position where the stacking segment F1 will be arranged may be marked on the upper surface of the stacking substrate 101.

[0040] The marking pattern 102 may have various shapes such as a dot pattern, a circular pattern, or a cross pattern, and adjacent marking patterns 102 may be arranged to be spaced apart from each other at equal intervals. In some embodiments, the marking pattern 102 may protrude from the upper surface of the stacked substrate 101. In some embodiments, the marking pattern 102 may be printed on the upper surface of the stacked substrate 101.

[0041] refer to Figure 6 After positioning the stacking segment F1 at a desired area (eg, corresponding to one or more marking patterns 102) on the upper surface of the stacking substrate 101, the bonding stamp SP (see Figure 5 ) may be separated from the stack segment F1, thereby transferring the stack segment F1 to the upper surface of the stack substrate 101, and a mask pattern MP may be formed on the stack segment F1.

[0042] First, the bonding stamp SP (see Figure 5 ) is separated from the stacking segment F1, and the adhesive residue that may exist above the stacking segment F1 can be removed. The process of removing the adhesive residue can be performed by a cleaning process and / or an annealing process. In some embodiments, a dichloromethane solution can be used in the cleaning process; however, the inventive concept is not limited thereto. The cleaning process and / or the annealing process can be performed in an environment that has minimal impact on the material constituting the stacking segment F1.

[0043] Next, a mask pattern MP may be formed over the cleaned stack segment F1 by using a photolithography process. The mask pattern MP may be a photoresist pattern or a hard mask pattern. Since the process of forming the mask pattern MP is clear to those skilled in the art, its redundant description will be omitted for simplicity.

[0044] refer to Figure 7 , can be achieved by using the mask pattern MP (see Figure 6 ) as an etching mask to etch the film stack 120S (see Figure 6 ) to form a first magnetic module M1.

[0045] This can be accomplished by using a mask pattern MP (see Figure 6 ) as an etching mask to sequentially etch the third film layer 123L (see Figure 6 ), the second film layer 122L (see Figure 6 ) and the first film layer 121L (see Figure 6 ) to form a first magnetic module M1 in which the magnetic structure 120 is arranged above the pattern segment 110.

[0046] The first magnetic module M1 may include a current layer segment 121, a magnetic layer segment 122, and a wiring layer segment 123 located above the pattern segment 110. The current layer segment 121, the magnetic layer segment 122, and the wiring layer segment 123 are illustrated as having the same shape; however, the inventive concept is not limited thereto.

[0047] For example, by using the mask pattern MP (see Figure 6 ) is used as an etching mask to first etch the third film layer 123L (see Figure 6 ), in the second film layer 122L (see Figure 6 ) is formed on the mask pattern MP (see Figure 6 ) and then using the second mask pattern as an etching mask to etch the second film layer 122L (see Figure 6 ), the current layer segment 121, the magnetic layer segment 122 and the wiring layer segment 123 can be manufactured to have different shapes.

[0048] By using this method, it is possible to complete the magnetic storage device 10 (see Fig.10 ) of a part (eg, a first part) of the first magnetic module M1.

[0049] refer to Figure 8 , by repeatedly forming the first magnetic module M1 in the same or similar manner (see Figure 7 ) manufacturing process, a magnetic memory device 10 (see Fig.10). The stacked substrate 101 may be the same as or different from the stacked substrate 101 on which the first magnetic module M1 is disposed.

[0050] The second magnetic module M2 may include a tunnel barrier segment 131 and a read sensor segment 132 located above (eg, stacked above) the pattern segment 110. The tunnel barrier segment 131 and the read sensor segment 132 are illustrated as having the same shape; however, the inventive concept is not limited thereto.

[0051] In particular, the tunnel barrier segment 131 may include an oxide of a non-magnetic material or a nitride of a non-magnetic material. For example, the tunnel barrier segment 131 may include at least one of MgO, TiO, AlO, MgAlO, TiN, VN, and BN; however, the inventive concept is not limited thereto. In an embodiment, the tunnel barrier segment 131 may be part of a magnetic tunnel junction (MTJ) structure and may constitute a tunnel barrier layer.

[0052] Likewise, the read sensor segment 132 may include a ferromagnetic material. For example, the read sensor segment 132 may include an alloy or a multilayer thin film of a magnetic material (CoFeB, Fe, Co, etc.) and a non-magnetic material (Pt, Ir, Ru, Ta, W, Mo, Hf, etc.); however, the inventive concept is not limited thereto. In an embodiment, the read sensor segment 132 may be part of the MTJ structure and may constitute a fixed layer.

[0053] refer to Fig. 9 , by using the adhesive stamp SP, the second magnetic module M2 can be picked up and coupled to the first magnetic module M1.

[0054] The upper surface of the first magnetic module M1 and the lower surface of the second magnetic module M2 may be attached to each other when in contact with each other. The attachment of the first magnetic module M1 and the second magnetic module M2 to each other may depend on the coupling force of the pattern segment 110 located below the second magnetic module M2.

[0055] refer to Fig.10 , by making the bonding stamp SP (see Fig. 9 ) is separated from the magnetic memory device 10 and adhesive residue that may exist on the second magnetic module M2 is removed to complete the magnetic memory device 10.

[0056] In particular, the process of removing the adhesive residue may be performed by a cleaning process and / or an annealing process. In some embodiments, a dichloromethane solution may be used in the cleaning process; however, the inventive concept is not limited thereto. The cleaning process and / or the annealing process may be performed in an environment that has minimal impact on the material constituting the magnetic memory device 10.

[0057] Although not shown, depending on the function and configuration of the magnetic memory device 10 , a third magnetic module (not shown) may be manufactured and coupled to the second magnetic module M2 .

[0058] As pointed out above, in order to meet the demand for miniaturization, multi-function and high performance of electronic products, large-capacity memory devices are being developed. In order to provide large capacity, a racetrack including a plurality of magnetic domains and storing information by the movement of a magnetic domain wall between the magnetic domains has been proposed. Also, a magnetic domain wall shift register type memory device including such a racetrack is being developed. Various methods are being proposed to manufacture highly integrated magnetic memory devices at low cost.

[0059] According to the method for manufacturing the magnetic memory device 10 according to the inventive concept, a plurality of magnetic modules M1 and M2 may be manufactured by using a delamination phenomenon of hexagonal boron nitride (h-BN) constituting the pattern segment 110 , and a stacked memory device may be completed by stacking the plurality of magnetic modules M1 and M2 .

[0060] Therefore, according to the manufacturing method for the magnetic memory device 10 according to the inventive concept, various types of magnetic memory devices 10 may be manufactured at low cost by modularizing each component constituting the magnetic memory device 10 .

[0061] Fig.11 is a flowchart illustrating a method of manufacturing a magnetic memory device according to another embodiment.

[0062] refer to Fig.11 , the magnetic memory device manufacturing method S20 may include a process sequence of a first operation S210 to a fifth operation S250 .

[0063] When a certain embodiment can be implemented differently, a specific process order can be performed differently from the order described or the order illustrated in the flowchart. For example, two processes described or illustrated successively can be performed substantially simultaneously, or two processes described or illustrated successively can be performed in an order opposite to the order described or illustrated.

[0064] The magnetic memory device manufacturing method S20 conceived according to the present invention may include: a first operation S210 of forming each of the first to third magnetic modules constituting the magnetic memory device; a second operation S220 of picking up the first magnetic module by using an adhesive stamp; a third operation S230 of attaching the second magnetic module below the first magnetic module attached to the adhesive stamp; a fourth operation S240 of attaching the third magnetic module below the second magnetic module and opposite to the first magnetic module attached to the adhesive stamp; and a fifth operation S250 of separating the adhesive stamp from the first magnetic module.

[0065] Will be referenced below FIG. 12A to FIG. 12F Technical features of each of the first to fifth operations S210 to S250 are described in detail.

[0066] FIG. 12A to FIG. 12F is a perspective view illustrating a method for manufacturing a magnetic memory device according to another embodiment in process order.

[0067] refer to Fig. 12A , the first magnetic module M1 may be picked up from the stacked substrate 101 by using the adhesive stamp SP.

[0068] Prior to this, the magnetic memory device 20 (see Fig.12E ) of the first magnetic module M1 and the second magnetic module M2 (see Fig. 12B ) and the third magnetic module M3 (see Fig. 12C ) in each of the above. Because by repeating the same or similar reference Figures 2 to 7 The method described above is used to form the first to third magnetic modules M1 , M2 , and M3 , so for the sake of brevity, redundant descriptions thereof will be omitted.

[0069] The first magnetic module M1 may be a magnetic memory device 20 (see Fig.12E That is, the uppermost component can be picked up first by using the bonding stamp SP.

[0070] refer to Fig. 12B , the second magnetic module M2 may be attached below the first magnetic module M1 attached to the adhesive stamp SP.

[0071] First, the first magnetic module M1 attached to the bonding stamp SP may be moved onto the second magnetic module M2 disposed over the stack substrate 101 (which may be the same substrate as or different from that of the first magnetic module M1 ).

[0072] Next, the lower surface of the first magnetic module M1 and the upper surface of the second magnetic module M2 may be attached to each other when in contact with each other. The attachment of the first magnetic module M1 and the second magnetic module M2 to each other may depend on the coupling force of the pattern segment located below the first magnetic module M1.

[0073] refer to Fig. 12C , the third magnetic module M3 may be attached below the first magnetic module M1 and the second magnetic module M2 attached to the adhesive stamp SP.

[0074] First, the first and second magnetic modules M1 and M2 attached to the bonding stamp SP may be moved onto a third magnetic module M3 disposed over a stacked substrate 101 (which may be the same or different substrate as that of the second magnetic module M2 and / or the first magnetic module M1 ).

[0075] Next, the lower surface of the second magnetic module M2 and the upper surface of the third magnetic module M3 may be attached to each other when in contact with each other. The attachment of the second magnetic module M2 and the third magnetic module M3 to each other may depend on the coupling force of the pattern segment located below the second magnetic module M2.

[0076] refer to Fig.12D , the bonding stamp SP may transfer the first to third magnetic modules M1 , M2 , and M3 to desired positions on the stack substrate 101 , and then the bonding stamp SP may be separated from the first magnetic module M1 .

[0077] Because each of the first to third magnetic modules M1, M2, and M3 can be more strongly coupled to each other by the coupling force of the pattern segment located therebelow, only the bonding stamp SP can be completely separated from the first to third magnetic modules M1, M2, and M3 without separating the first to third magnetic modules M1, M2, and M3. That is, the coupling force between the corresponding magnetic modules M1, M2, and / or M3 can be greater than the bonding strength between the bonding stamp SP and one of the corresponding magnetic modules M1, M2, or M3 attached thereto.

[0078] refer to Fig.12E , by making the bonding stamp SP (see Fig.12D ) is separated from the magnetic memory device 20 and adhesive residue that may exist on the first magnetic module M1 is removed to complete the magnetic memory device 20 .

[0079] In particular, the process of removing the adhesive residue can be performed by a cleaning process and / or an annealing process. In some embodiments, a dichloromethane solution can be used in the cleaning process; however, the inventive concept is not limited thereto. The cleaning process and / or the annealing process can be performed in an environment that has minimal impact on the material constituting the magnetic memory device 20.

[0080] Therefore, the magnetic memory device 20 may be formed by stacking the first to third magnetic modules M1, M2 and M3 from top to bottom, that is, by sequentially stacking the magnetic modules M1, M2 and M3. Finally, the magnetic memory device 20 may be completed by separating the magnetic memory device 20 from the stacking substrate 101.

[0081] Will be referenced below Fig.12F The first to third magnetic modules M1 , M2 , and M3 constituting the magnetic memory device 20 are described in detail.

[0082] As described above, since the magnetic memory device 20 is formed by sequentially stacking the first to third magnetic modules M1, M2, and M3 from top to bottom, as the modules are closer to the bonding stamp SP (see FIG. Fig.12D ), the module should be designed to have a stronger coupling force with the module below it.

[0083] Therefore, the areas of the pattern segments for providing coupling force in the first to third magnetic modules M1, M2, and M3 may be different from each other. For example, the first area (e.g., first surface area) of the first pattern segment 111 of the first magnetic module M1 may be greater than the second area (e.g., second surface area) of the second pattern segment 112 of the second magnetic module M2. Similarly, the second area of ​​the second pattern segment 112 of the second magnetic module M2 may be greater than the third area (e.g., third surface area) of the third pattern segment 113 of the third magnetic module M3.

[0084] By using the difference between the coupling forces according to the difference between the areas (eg, the corresponding surface areas) of the first to third pattern segments 111, 112, and 113, only the stamp SP (see Fig.12D ) can be completely separated from the first to third magnetic modules M1, M2 and M3 without separating the first to third magnetic modules M1, M2 and M3.

[0085] In the magnetic memory device 20 of the present embodiment, each of the second magnetic module M2 and the third magnetic module M3 may be configured to include a magnetic track layer having a plurality of magnetic domains, and the magnetic track layer of the second magnetic module M2 may constitute a free layer. Similarly, the first magnetic module M1 may be configured to include a read sensor configured to read information of the magnetic track layer of the second magnetic module M2. However, the configurations of the first to third magnetic modules M1, M2, and M3 are not limited thereto.

[0086] Fig.13 is a flowchart illustrating a method of manufacturing a magnetic memory device according to another embodiment.

[0087] refer to Fig.13 , the magnetic memory device manufacturing method S30 may include a process sequence of a first operation S310 to a seventh operation S370.

[0088] When a certain embodiment can be implemented differently, a specific process order can be performed differently from the order described or the order illustrated in the flowchart. For example, two processes described or illustrated successively can be performed substantially simultaneously, or two processes described or illustrated successively can be performed in an order opposite to the order described or illustrated.

[0089] The magnetic memory device manufacturing method S30 conceived according to the present invention may include: a first operation S310 of forming each of the first to third magnetic modules constituting the magnetic memory device; a second operation S320 of picking up the first magnetic module by an adhesive stamp and attaching the first magnetic module to the upper surface of the stacked substrate; a third operation S330 of separating the adhesive stamp from the first magnetic module; a fourth operation S340 of picking up the second magnetic module by the adhesive stamp and attaching the second magnetic module to the first magnetic module; a fifth operation S350 of separating the adhesive stamp from the second magnetic module; a sixth operation S360 of picking up the third magnetic module by the adhesive stamp and attaching the third magnetic module to the second magnetic module; and a seventh operation S370 of separating the adhesive stamp from the third magnetic module.

[0090] Will be referenced below FIG. 14A to FIG. 14G Technical features of each of the first to seventh operations S310 to S370 are described in detail.

[0091] FIG. 14A to FIG. 14G is a perspective view illustrating a method for manufacturing a magnetic memory device according to another embodiment in process order.

[0092] refer to Fig.14A , the second magnetic module M2 may be picked up from the stacked substrate 101 by using the adhesive stamp SP.

[0093] Prior to this, the magnetic memory device 30 (see Figure 14G ) of the first magnetic module M1 (see Fig.14D ), the second magnetic module M2 and the third magnetic module M3 (see Fig. 14B ) in each of the above. Because by repeating the same or similar reference Figures 2 to 7 The method described above is used to form the first to third magnetic modules M1 , M2 , and M3 , so for the sake of brevity, redundant descriptions thereof will be omitted.

[0094] refer to Fig. 14B , the second magnetic module M2 attached to the adhesive stamp SP may be attached to the third magnetic module M3.

[0095] First, the second magnetic module M2 attached to the bonding stamp SP may be moved onto the third magnetic module M3 disposed over the stacked substrate 101 .

[0096] Next, the upper surface of the third magnetic module M3 and the lower surface of the second magnetic module M2 may be attached to each other when in contact with each other. The attachment of the third magnetic module M3 and the second magnetic module M2 to each other may depend on the coupling force of the pattern segment located below the second magnetic module M2.

[0097] refer to Fig. 14C , the adhesive stamp SP may be separated from the second magnetic module M2 , and adhesive residue that may exist above the second magnetic module M2 may be removed.

[0098] In particular, the process of removing the adhesive residue may be performed by a cleaning process and / or an annealing process. In some embodiments, a dichloromethane solution may be used in the cleaning process; however, the inventive concept is not limited thereto. The cleaning process and / or the annealing process may be performed in an environment that has minimal impact on the materials constituting the third magnetic module M3 and the second magnetic module M2.

[0099] refer to Fig.14D , the first magnetic module M1 may be picked up from the stack substrate 101 (which may be the same as or different from the substrate of the second magnetic module M2 and / or the third magnetic module M3 ) by using the adhesive stamp SP.

[0100] The first magnetic module M1 may be an uppermost component of the magnetic memory device 30 (see Figure 14G ). That is, the uppermost component can be picked up last by using the bonding stamp SP.

[0101] refer to Fig.14E , the first magnetic module M1 attached to the adhesive stamp SP may be attached to the second magnetic module M2.

[0102] First, the first magnetic module M1 attached to the bonding stamp SP may be moved onto the second magnetic module M2 disposed above the stack substrate 101 .

[0103] Next, the upper surface of the second magnetic module M2 and the lower surface of the first magnetic module M1 may be attached to each other when in contact with each other. The attachment of the second magnetic module M2 and the first magnetic module M1 to each other may depend on the coupling force of the pattern segment located below the first magnetic module M1.

[0104] refer to Fig.14F , the adhesive stamp SP can be separated from the first magnetic module M1.

[0105] Because each of the first to third magnetic modules M1, M2, and M3 can be more strongly coupled to each other by the coupling force of the pattern segment located therebelow, only the bonding stamp SP can be completely separated from the first to third magnetic modules M1, M2, and M3 without separating the first to third magnetic modules M1, M2, and M3. That is, the coupling force between the corresponding magnetic modules M1, M2, and / or M3 can be greater than the bonding strength between the bonding stamp SP and one of the corresponding magnetic modules M1, M2, or M3 attached thereto.

[0106] refer to Figure 14G, by making the bonding stamp SP (see Fig.14F ) is separated from the magnetic memory device 30 and adhesive residue that may exist on the first magnetic module M1 is removed to complete the magnetic memory device 30 .

[0107] In particular, the process of removing the adhesive residue may be performed by a cleaning process and / or an annealing process. In some embodiments, a dichloromethane solution may be used in the cleaning process; however, the inventive concept is not limited thereto. The cleaning process and / or the annealing process may be performed in an environment that has minimal impact on the material constituting the magnetic memory device 30.

[0108] Therefore, the magnetic memory device 30 may be formed by sequentially stacking the first to third magnetic modules M3 , M2 , and M1 from top to bottom. Finally, the magnetic memory device 30 may be completed by separating the magnetic memory device 30 from the stack substrate 101 .

[0109] Fig.15 is a perspective view illustrating a stack structure of a magnetic memory device according to an embodiment.

[0110] refer to Fig.15 , the magnetic memory device 40 may be formed by stacking a plurality of magnetic memory devices 10 .

[0111] In the magnetic memory device 40 of the present embodiment, each of the multiple magnetic memory devices 10 may include: a two-dimensional sheet; a magnetic track layer arranged above the two-dimensional sheet; a write line layer arranged at two or corresponding ends of the magnetic track layer; a read sensor arranged at the center or at the center of the magnetic domain of the magnetic track layer; and a read line layer arranged above the read sensor.

[0112] The two-dimensional sheet may include hexagonal boron nitride (h-BN), and the two-dimensional sheet may serve as a spacer between the magnetic track layer and the read sensor.

[0113] That is, in the magnetic storage device 40 of the present embodiment, each of the plurality of magnetic storage devices 10 may be used as a module, and the magnetic storage device 40 may have a structure in which a plurality of such modules are stacked. In some embodiments, as illustrated, the magnetic storage device 40 may include a plurality of magnetic storage devices 10 of the same shape in a stacked structure. In some embodiments, although not illustrated, the magnetic storage device 40 may include a plurality of magnetic storage devices 10 of different shapes in a stacked structure.

[0114] It should be understood that spatially relative terms such as "above", "over", "up", "below", "below", "lower", "side", etc., may be expressed relative to a reference system (e.g., a substrate) as shown in the drawings, unless otherwise indicated. It should be understood that such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the various figures. For example, if the device in the various figures were turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the term "below" can encompass both orientations of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be interpreted accordingly.

[0115] While the inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the scope of the appended claims.

Claims

1. A method for manufacturing a magnetic storage device, the method comprising: forming a first pattern segment on an upper surface of a base substrate; forming a first film stack on the upper surface of the base substrate and the first pattern segment, the first film stack comprising at least one magnetic layer; forming a first stack segment by layering the first pattern segment and a portion of the first film stack that overlaps the first pattern segment; disposing the first stacking segment on an upper surface of a stacking substrate; patterning the first stacked segment to form a first magnetic module constituting a first portion of the magnetic storage device; forming a second magnetic module constituting a second portion of the magnetic memory device by forming a second pattern segment, forming a second film stack including at least one magnetic layer on the second pattern segment, forming a second stack segment by layering the second pattern segment and a portion of the second film stack overlapping the second pattern segment, and patterning the second stack segment; as well as The second magnetic module is coupled to the first magnetic module.

2. The method according to claim 1, wherein: The first pattern segment includes a stacked structure including a plurality of layers of a two-dimensional sheet of hexagonal boron nitride.

3. The method according to claim 2, wherein: Forming the first stack segment includes using an adhesive stamp over the portion of the first film stack overlapping the first pattern segment to remove the portion of the first film stack by delaminating some of the layers of the two-dimensional sheet constituting the first pattern segment.

4. The method according to claim 1, wherein: The first magnetic module comprises: a magnetic track layer comprising a plurality of magnetic domains; and A write line layer is located at respective ends of the magnetic track layer.

5. The method according to claim 4, wherein: The second magnetic module comprises: a read sensor configured to read information of the magnetic track layer of the first magnetic module; and A read line layer is located above the read sensor.

6. The method according to claim 5, wherein: The magnetic track layer of the first magnetic module, the second pattern segment of the second magnetic module, and the read sensor of the second magnetic module respectively include a free layer, a tunnel barrier layer, and a fixed layer of a magnetic tunnel junction structure.

7. The method according to claim 1, wherein: Each of the base substrate and the stack substrate includes a respective wafer, and A marking pattern indicating a position where the first stack segment is to be arranged is marked on the upper surface of the stack substrate.

8. The method according to claim 1, further comprising: forming a third magnetic module constituting a third portion of the magnetic memory device by forming a third pattern segment, forming a third film stack including at least one magnetic layer on the third pattern segment, forming a third stack segment by layering the third pattern segment and a portion of the third film stack overlapping the third pattern segment, and patterning the third stack segment; and The third magnetic module is coupled to the second magnetic module.

9. The method according to claim 8, wherein: Each of the first magnetic module and the second magnetic module comprises: a magnetic track layer comprising a plurality of magnetic domains; and a write line layer located at respective ends of the magnetic track layer, and Wherein, the third magnetic module comprises: a read sensor configured to read information of the magnetic track layer of the second magnetic module; and A read line layer is located above the read sensor.

10. The method according to claim 9, wherein: The magnetic track layer of the second magnetic module, the pattern segment of the third magnetic module, and the read sensor of the third magnetic module respectively include a free layer, a tunnel barrier layer, and a fixed layer of a magnetic tunnel junction structure.

11. A method for manufacturing a magnetic storage device, the method comprising: forming each of a first magnetic module, a second magnetic module, and a third magnetic module constituting the magnetic memory device; picking up the first magnetic module by placing an adhesive stamp on the first magnetic module; attaching the second magnetic module below the first magnetic module attached to the adhesive stamp; attaching the third magnetic module below the second magnetic module and opposite the first magnetic module attached to the adhesive stamp; and The adhesive stamp is separated from the first magnetic module, the second magnetic module is attached below the first magnetic module and the third magnetic module is attached below the second magnetic module, Each of the first magnetic module, the second magnetic module and the third magnetic module includes a corresponding pattern segment, the corresponding pattern segment includes a stacked structure, and the stacked structure includes a plurality of layers of a two-dimensional sheet of hexagonal boron nitride.

12. The method according to claim 11, wherein: The first magnetic module, the second magnetic module, and the third magnetic module are sequentially stacked.

13. The method according to claim 12, wherein: A first surface area of ​​the corresponding pattern segment included in the first magnetic module is greater than a second surface area of ​​the corresponding pattern segment included in the second magnetic module, and Wherein, the second surface area of ​​the corresponding pattern segment included in the second magnetic module is greater than the third surface area of ​​the corresponding pattern segment included in the third magnetic module.

14. The method according to claim 11, wherein: Each of the first magnetic module, the second magnetic module, and the third magnetic module is formed by a layering process of the corresponding pattern segment and a patterning process of a corresponding film stack over the corresponding pattern segment.

15. The method according to claim 14, wherein: Each of the second magnetic module and the third magnetic module comprises: a magnetic track layer comprising a plurality of magnetic domains; and a write line layer located at respective ends of the magnetic track layer, and Wherein, the first magnetic module comprises: a read sensor configured to read information of the magnetic track layer of the second magnetic module; and A read line layer is located above the read sensor.

16. A method for manufacturing a magnetic memory device, the method comprising: forming each of a first magnetic module, a second magnetic module, and a third magnetic module constituting the magnetic memory device; Picking up the first magnetic module by placing an adhesive stamp on the first magnetic module, attaching the first magnetic module to an upper surface of a stacking substrate, and separating the adhesive stamp from the first magnetic module; Picking up the second magnetic module by placing the adhesive stamp on the second magnetic module, attaching the second magnetic module to the first magnetic module, and separating the adhesive stamp from the second magnetic module; picking up the third magnetic module by placing the adhesive stamp on the third magnetic module, attaching the third magnetic module to the second magnetic module, and separating the adhesive stamp from the third magnetic module, Each of the first magnetic module, the second magnetic module and the third magnetic module includes a corresponding pattern segment, the corresponding pattern segment includes a stacked structure, and the stacked structure includes a plurality of layers of a two-dimensional sheet of hexagonal boron nitride.

17. The method according to claim 16, wherein: The first magnetic module, the second magnetic module, and the third magnetic module are sequentially stacked.

18. The method according to claim 17, further comprising: After the adhesive stamp is separated from the first, second, and third magnetic modules, a cleaning process of removing adhesive residues of the adhesive stamp from the first, second, and third magnetic modules is performed.

19. The method according to claim 16, wherein: Each of the first magnetic module, the second magnetic module, and the third magnetic module is formed by a layering process of the corresponding pattern segment and a patterning process of a corresponding film stack over the corresponding pattern segment.

20. The method according to claim 19, wherein: Each of the first magnetic module and the second magnetic module comprises: a magnetic track layer comprising a plurality of magnetic domains; and a write line layer located at respective ends of the magnetic track layer, and Wherein, the third magnetic module comprises: a read sensor configured to read information of the magnetic track layer of the second magnetic module; and A read line layer is located above the read sensor.

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