A laser-induced periodic structure enhanced photodetector and a preparation method thereof

Abstract

Embodiments of the present application relate to the technical field of photoelectric detection, and particularly relate to a laser-induced periodic structure enhanced photoelectric detector and a preparation method thereof. The photoelectric detector comprises, from bottom to top, a substrate layer, a grating template layer, a bottom metal layer, a semiconductor layer and a surface metal layer. Injected light is injected into the surface metal layer, surface plasmon resonance is excited due to the nano-grating structure of the surface metal layer, and the absorption efficiency of the injected light is improved. There is a corrugated nano-grating structure between the bottom metal layer, the semiconductor layer and the surface metal layer. The bottom metal layer, the semiconductor layer and the surface metal layer form a Fabry-Perot cavity structure. After the injected light enters the cavity, a standing wave is formed in the cavity, interacts with the material, and produces a cavity resonance enhancement effect. By adjusting the period of the grating structure of the grating template layer and the thickness of the semiconductor layer, multi-wavelength selection of the photoelectric detector can be realized. The photoelectric detector is simple to prepare, can be flexibly controlled, and is suitable for mass production.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of photoelectric detection, and particularly relate to a laser-induced periodic structure enhanced photoelectric detector and a preparation method thereof. BACKGROUND

[0002] As an important device capable of converting optical signals into electrical signals, photoelectric detectors are widely used in the fields of optical communication, sensing detection, infrared guidance, etc. In order to meet the diversified photoelectric detection needs, various diversified photoelectric detector structures are widely studied. Among them, the Schottky photoelectric detector has the advantages of simple structure and fast response speed, and has become an important research direction in the field of optoelectronics. However, due to the internal photoemission effect, the Schottky detector is usually limited in key performance indicators such as quantum efficiency, cutoff wavelength and dark current. Especially for infrared light signals, as the energy of infrared photons decreases, the blocking effect of the Schottky barrier on the photoemission of hot carriers becomes obvious, which greatly reduces the detection ability of the Schottky photoelectric detector.

[0003] By designing and optimizing the surface or internal structure of the photoelectric detector, such as microcavity, waveguide, metal nanoantenna, surface plasmon polariton and light trapping structure to enhance light absorption, the performance of the Schottky photoelectric detector can be improved. This functional special structure is usually realized by using conventional nanofabrication techniques such as photolithography, electron beam exposure, nanoimprinting, etc. However, these conventional nanofabrication techniques still have certain limitations for the manufacture and application of photoelectric detectors. Although photolithography and electron beam exposure techniques can accurately realize complex structures with small area, the manufacturing efficiency is extremely low and the cost is too high, which is not suitable for industrialized mass production of photoelectric detectors. Although nanoimprinting can prepare nanostructures by template transfer, thereby realizing batch preparation, due to the direct pressure involved in the process, the imprinting template is inevitably worn out, and at the same time, the design structure fidelity may be reduced, or even the substrate material and structure may be damaged. In addition, the fixed template used in nanoimprinting also lacks flexibility and scalability. SUMMARY

[0004] Therefore, embodiments of the present application propose a laser-induced periodic structure enhanced photoelectric detector and a preparation method thereof, which can solve the technical problems of low quantum efficiency and complex preparation process of thermal electron photoelectric detectors, and can realize flexible regulation and control of the absorption characteristics of the photoelectric detector, and is simple to prepare and suitable for large-scale batch production.

[0005] In order to achieve the above-mentioned purpose, the application provides a laser-induced periodic structure enhanced photodetector, which comprises a substrate layer (1) from bottom to top, a grating template layer (2), a bottom metal layer (3), a semiconductor layer (4) and a surface metal layer (5); due to the structural transmission of the grating template layer (2), the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) deposited above the grating template layer (2) also have nano-grating structures; injection light is injected into the surface metal layer (5), and surface plasmon resonance is excited due to the nano-grating structure of the surface metal layer (5), so as to enhance the local electric field and further improve the absorption efficiency of the injection light; meanwhile, the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) have a corrugated nano-grating structure, which is used to improve the efficiency of hot electron injection; the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) form a metal-semiconductor-metal structure and form a Fabry-Perot cavity structure; after the injection light enters the Fabry-Perot cavity structure, a standing wave is formed in the cavity, interacts with the material, produces a cavity resonance enhancement effect, and thus improves the generation rate of photo-generated carriers; by adjusting the period of the grating structure of the grating template layer (2) and the thickness of the semiconductor layer (4), the multi-wavelength selection of the photodetector can be realized.

[0006] In order to achieve the above-mentioned purpose, the application further provides a preparation method of a laser-induced periodic structure enhanced photodetector, which comprises the following steps: cleaning a substrate as a substrate layer (1), and preparing a template precursor layer (6) on the substrate layer (1); using a pulsed laser to scan and irradiate the grating template precursor layer (6) to produce a laser-induced surface periodic structure and form a grating template layer (2); preparing a metal material on the grating template layer (2) to form a bottom metal layer (3); preparing a semiconductor material on the bottom metal layer (3) to form a semiconductor layer (4); and preparing a metal material on the semiconductor layer (4) to form a surface metal layer (5), thereby completing the preparation of the photodetector.

[0007] In order to achieve the above-mentioned purpose, the application further provides a preparation device of a laser-induced periodic structure enhanced photodetector, which comprises: a substrate cleaning module for cleaning a substrate as a substrate layer; a template precursor layer preparation module for preparing a template precursor layer on the substrate layer; a grating template layer preparation module for using a pulsed laser to scan and irradiate the grating template precursor layer to produce a laser-induced surface periodic structure and form a grating template layer; a bottom metal layer preparation module for preparing a metal material on the grating template layer to form a bottom metal layer; a semiconductor layer preparation module for preparing a semiconductor material on the bottom metal layer to form a semiconductor layer; and a surface metal layer preparation module for preparing a metal material on the semiconductor layer to form a surface metal layer, thereby completing the preparation of the photodetector.

[0008] In order to achieve the above object, the application further provides a computer readable storage medium storing a computer program, which, when executed by a processor, can realize the preparation method of the laser-induced periodic structure enhanced photodetector.

[0009] The laser-induced periodic structure enhanced photodetector and the preparation method thereof have the following advantages. The bottom metal layer, the semiconductor layer and the surface metal layer deposited above the grating template layer also have the nano-grating structure due to the structural transmission of the grating template layer. The bottom metal layer, the semiconductor layer and the surface metal layer form a metal-semiconductor-metal structure, which not only forms a Fabry-Perot cavity to realize resonance absorption enhancement, but also fully utilizes the laser-induced periodic surface grating as an enhancement structure to excite surface plasmon resonance, thereby enhancing the interaction strength of light and matter. The wrinkle-shaped nano-grating structure increases the absorption area of the photodetector surface to the injected light and the interaction area of light and matter, thereby effectively enhancing the absorption efficiency, the thermoelectron generation rate and the transition rate of the injected light, and greatly improving the detection efficiency of the photodetector. In the process of preparing the photodetector, the periodic surface enhancement structure is generated by the non-contact self-organization method of the pulsed laser, can be prepared on various material substrates, has high structure quality, strong robustness, high efficiency, low cost, simple method, is suitable for large-scale batch production, and can realize flexible regulation of the characteristics of the surface periodic structure and the absorption spectrum wavelength bandwidth of the photodetector by changing the pulsed laser parameters, thereby greatly enhancing the universality of the photodetector.

[0010] Optionally, the material of the substrate layer (1) is silicon, glass or aluminum oxide, the precursor of the grating template layer (2) is amorphous silicon, the material of the bottom metal layer (3) and the surface metal layer (5) is gold or silver, and the material of the semiconductor layer (4) is titanium dioxide.

[0011] Optionally, the thickness of the precursor of the grating template layer (2) is 50nm to 300nm, the thickness of the bottom metal layer (3) is 100nm, the thickness of the semiconductor layer (4) is 100nm to 200nm, and the thickness of the surface metal layer (5) is 10nm to 30nm.

[0012] Optionally, the preparation method of the template precursor layer (6), the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) is physical vapor deposition, atomic layer deposition or electron beam evaporation.

[0013] Optionally, the pulsed laser is a femtosecond pulsed laser, a picosecond pulsed laser or a nanosecond pulsed laser.

[0014] Optionally, when the template precursor layer (6) is prepared on the substrate layer (1), silicon is plated on the substrate layer (1) as the template precursor layer (6) by using high vacuum magnetron sputtering thin film deposition technology; when the bottom metal layer (3) is prepared on the grating template layer (2), gold is deposited by using high vacuum magnetron sputtering thin film deposition technology to form the bottom metal layer (3); when the semiconductor layer (4) is prepared on the bottom metal layer (3), titanium dioxide is deposited by using high vacuum magnetron sputtering thin film deposition technology as the semiconductor layer (4); when the surface metal layer (5) is prepared on the semiconductor layer (4), gold is deposited by using high vacuum magnetron sputtering thin film deposition technology as the surface metal layer (5).

[0015] Optionally, after the preparation of the photodetector is completed, electrodes are led out from the bottom metal layer (3) and the surface metal layer (5) respectively, the surface metal layer (5) is irradiated by the injected light, and the performance of the photodetector is tested. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technical solutions, the drawings needed to be used in the embodiments of the present application or the related technical solutions will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0017] Figure 1 is a structure schematic diagram of a laser-induced periodic structure enhanced photodetector provided in an embodiment of the present application;

[0018] Figure 2 is a flow chart of a preparation method of a laser-induced periodic structure enhanced photodetector provided in another embodiment of the present application;

[0019] Figure 3 is a forming schematic diagram of a photodetector in a preparation process provided in another embodiment of the present application;

[0020] Figure 4 is a reflection spectrum schematic diagram of a laser-induced periodic structure enhanced photodetector provided in an embodiment of the present application;

[0021] Figure 5 is a reflection spectrum schematic diagram of another laser-induced periodic structure enhanced photodetector provided in an embodiment of the present application;

[0022] Figure 6 is a structure schematic diagram of a preparation device of a laser-induced periodic structure enhanced photodetector provided in another embodiment of the present application. DETAILED DESCRIPTION

[0023] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below with reference to the drawings. In the various embodiments of the present application, many technical details are presented in order to make the present application better understood. However, the technical solutions claimed by the present application can be implemented even without these technical details and various changes and modifications based on the various embodiments below. The division of the various embodiments below is only for the convenience of description, and should not constitute any limitation on the specific implementation of the present application. The various embodiments can be combined and referenced to each other without contradiction.

[0024] One embodiment of the present application proposes a laser-induced periodic structure enhanced photodetector. The implementation details of the laser-induced periodic structure enhanced photodetector proposed in the embodiment will be described in detail below. The following content only provides implementation details for the convenience of understanding, and is not essential for implementing the present solution.

[0025] The specific structure of the laser-induced periodic structure enhanced photodetector proposed in the embodiment is shown in FIG. 1, which includes a substrate layer 1 from bottom to top, a grating template layer 2, a bottom metal layer 3, a semiconductor layer 4 and a surface metal layer 5. Figure 1

[0026] Due to the structural transmission of the grating template layer 2, the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5 deposited above the grating template layer 2 also have nanometer grating structures. That is, the nanometer grating structure of the grating template layer 2 is transmitted from bottom to top to the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5,

[0027] The injected light is injected into the surface metal layer 5, and the surface plasmon resonance is excited due to the nanometer grating structure of the surface metal layer 5, thereby enhancing the local electric field and further improving the absorption efficiency of the injected light. At the same time, the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5 have a corrugated nanometer grating structure to improve the efficiency of hot electron injection, thereby improving the quantum efficiency and detection rate of the photodetector.

[0028] The bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5 form a metal-semiconductor-metal structure, and at the same time form a Fabry-Perot cavity structure. After the injected light is injected into the Fabry-Perot cavity structure, a standing wave is formed in the cavity, thereby interacting with the material to produce a cavity resonance enhancement effect, thereby improving the generation rate of photo-generated carriers and further improving the quantum efficiency and detection rate of the photodetector.

[0029] ​In addition, by adjusting the period of the grating structure of the grating template layer 2 and the thickness of the semiconductor layer 4 (i.e. adjusting the cavity length of the Fabry-Perot cavity), the multi-wavelength selection of the photoelectric detector can be realized.

[0030] In one example, the material of the substrate layer 1 is silicon, glass (silicon dioxide) or aluminum oxide (sapphire), the precursor of the grating template layer 2 is amorphous silicon, the material of the bottom metal layer 3 and the surface metal layer 5 is gold or silver, and the material of the semiconductor layer 4 is titanium dioxide.

[0031] In one example, the thickness of the precursor of the grating template layer 2 is 50-300 nm, the thickness of the bottom metal layer 3 is 100 nm, the thickness of the semiconductor layer 4 is 100-200 nm, and the thickness of the surface metal layer 5 is 10-30 nm.

[0032] In this embodiment, due to the structural transfer of the grating template layer, the bottom metal layer, the semiconductor layer and the surface metal layer deposited above the grating template layer also have nanometer grating structures, and the bottom metal layer, the semiconductor layer and the surface metal layer form a metal-semiconductor-metal structure, which not only forms a Fabry-Perot cavity to realize resonance absorption enhancement, but also uses the periodic surface grating induced by laser as an enhancement structure to excite surface plasmon resonance and enhance the interaction strength of light and matter. The corrugated nanometer grating structure increases the absorption area of the photoelectric detector surface to the injected light and the interaction area of light and matter, effectively enhances the absorption efficiency, thermoelectron generation rate and transition rate of the injected light, and greatly improves the detection rate of the photoelectric detector.

[0033] Correspondingly, another embodiment of the present application provides a preparation method of a photoelectric detector with laser-induced periodic structure enhancement. The following will specifically describe the implementation details of the preparation method of the photoelectric detector with laser-induced periodic structure enhancement provided in this embodiment. The following implementation details are provided for the convenience of understanding and are not necessary for implementing this solution.

[0034] The specific process of the preparation method of the photoelectric detector with laser-induced periodic structure enhancement provided in this embodiment is shown in Figure 2 As shown in Figure 3 The preparation method comprises the following steps.

[0035] S1, cleaning a substrate as a substrate layer and preparing a template precursor layer on the substrate layer.

[0036] In a specific implementation, first, the substrate is cleaned as the substrate layer 1, and then silicon is plated on the substrate layer 1 as the template precursor layer 6 by using a high-vacuum magnetron sputtering thin film deposition technology.

[0037] S2, using a pulsed laser to scan and irradiate the grating template precursor layer to generate a laser-induced surface periodic structure, thereby forming a grating template layer.

[0038] In a specific implementation, the template precursor layer 6 is the precursor of the grating template layer 2. To form the grating template layer 2, a pulsed laser is used to scan and irradiate the grating template precursor layer 6 to generate a laser-induced surface periodic structure, thereby forming the grating template layer 2.

[0039] In one example, the pulsed laser used can be a femtosecond pulsed laser, a picosecond pulsed laser, or a nanosecond pulsed laser, etc.

[0040] S3, preparing a metal material on the grating template layer to form a bottom metal layer.

[0041] In a specific implementation, after the grating template layer 2 is prepared, gold is deposited on the grating template layer 2 using high-vacuum magnetron sputtering thin film deposition technology, thereby forming the bottom metal layer 3.

[0042] S4, preparing a semiconductor material on the bottom metal layer to form a semiconductor layer.

[0043] In a specific implementation, after the bottom metal layer 3 is prepared, titanium dioxide is deposited on the bottom metal layer 3 using high-vacuum magnetron sputtering thin film deposition technology, thereby forming the semiconductor layer 4.

[0044] S5, preparing a metal material on the semiconductor layer to form a surface metal layer, thereby completing the preparation of the photodetector.

[0045] In a specific implementation, after the semiconductor layer 4 is prepared, gold is deposited on the semiconductor layer 4 using high-vacuum magnetron sputtering thin film deposition technology, thereby forming the surface metal layer 5, and completing the preparation of the photodetector.

[0046] In one example, the preparation methods of the template precursor layer 6, the bottom metal layer 3, the semiconductor layer 4, and the surface metal layer 5 can be physical vapor deposition, atomic layer deposition, or electron beam evaporation.

[0047] In one example, after the preparation of the photodetector is completed, electrodes are respectively led out from the bottom metal layer 3 and the surface metal layer 5, light is irradiated to the surface metal layer 5, the performance of the photodetector is tested, and the photodetector is shipped out if the performance test is passed, otherwise, the photodetector needs to be reworked or discarded.

[0048] In the process of preparing the photodetector, the periodic surface enhancement structure is generated by a non-contact self-organizing method of pulsed laser, can be prepared on various material substrates, has high structure quality, strong robustness, high efficiency, low cost, simple method, is suitable for large-scale batch production, and can realize flexible regulation of characteristics such as surface periodic structure and wavelength bandwidth of the absorption spectrum of the photodetector by changing the pulsed laser parameters, and greatly enhances the universality of the photodetector.

[0049] The step division of the above various methods is only for the purpose of clear description, and can be combined into one step or split into multiple steps in implementation, as long as the same logical relationship is included, and all are within the protection scope of the present application; adding insignificant modifications or introducing insignificant designs in the algorithm or process, but not changing the core design of the algorithm and process are within the protection scope of the present application.

[0050] In another embodiment, the process for preparing the photodetector is as follows: first, clean the substrate as a substrate layer, use high-vacuum magnetron sputtering thin film deposition technology to deposit 100 nm silicon on the substrate layer as a precursor layer; then use pulsed laser to scan and irradiate the grating template precursor layer, generate laser-induced surface periodic structure with an amplitude of 20 nm and a period of 800 nm as a grating template layer; then use high-vacuum magnetron sputtering thin film deposition technology to deposit 100 nm gold on the grating template layer to form a bottom metal layer; use high-vacuum magnetron sputtering thin film deposition technology to deposit 170 nm titanium dioxide on the bottom metal layer as a semiconductor layer; finally, use high-vacuum magnetron sputtering thin film deposition technology to deposit 20 nm gold on the semiconductor layer as a surface metal layer, to complete the preparation of the photodetector.

[0051] When testing, electrodes are respectively led out from the bottom metal layer and the surface metal layer, and the incident light is irradiated to the surface of the surface metal layer, Figure 4 is a schematic diagram of the reflectance spectrum of the photodetector prepared in this embodiment, from Figure 4 It can be seen from the above that the photodetector prepared in this embodiment has a reflectivity of about 0% for 875 nm near-infrared light, that is, the tunable perfect absorption photodetection of the wavelength of the detected light can be realized.

[0052] In another embodiment, the process for preparing the photodetector is as follows: first, a substrate is cleaned as a substrate layer, a 100 nm silicon is plated on the substrate layer as a precursor layer using a high vacuum magnetron sputtering thin film deposition technology; then a grating template precursor layer is irradiated using a pulsed laser scanning, a laser-induced surface periodic structure with an amplitude of 28 nm and a period of 875 nm is generated as a grating template layer; then a 100 nm gold is deposited on the grating template layer using a high vacuum magnetron sputtering thin film deposition technology to form a bottom metal layer; a 185 nm titanium dioxide is deposited on the bottom metal layer using a high vacuum magnetron sputtering thin film deposition technology as a semiconductor layer; finally, a 15 nm gold is deposited on the semiconductor layer using a high vacuum magnetron sputtering thin film deposition technology as a surface metal layer, and the preparation of the photodetector is completed.

[0053] When testing, electrodes are respectively led out from the bottom metal layer and the surface metal layer, and the incident light is irradiated to the surface of the surface metal layer, Figure 5 is a schematic diagram of the reflectance spectrum of the photodetector prepared in this embodiment, from Figure 5 It can be seen from that the reflectivity of the photodetector prepared in this embodiment to 950 nm near-infrared light is as low as about 0%, that is, the tunable perfect absorption photodetection to the detection light wavelength can be realized.

[0054] Correspondingly, another embodiment of the present application proposes a preparation device of a laser-induced periodic structure enhanced photodetector, and the implementation details of the preparation device of the laser-induced periodic structure enhanced photodetector proposed in this embodiment are specifically described as follows. The following contents are only implementation details provided for the convenience of understanding, and are not necessary for implementing this embodiment, Figure 6 is a specific structure schematic diagram of the preparation device of the laser-induced periodic structure enhanced photodetector proposed in this embodiment, which comprises a substrate cleaning module 601, a template precursor layer preparation module 602, a grating template layer preparation module 603, a bottom metal layer preparation module 604, a semiconductor layer preparation module 605 and a surface metal layer preparation module 606.

[0055] The substrate cleaning module 601 is used to clean the substrate as a substrate layer.

[0056] The template precursor layer preparation module 602 is used to prepare a template precursor layer on the substrate layer.

[0057] The grating template layer preparation module 603 is used to irradiate the grating template precursor layer using a pulsed laser scanning to generate a laser-induced surface periodic structure to form a grating template layer.

[0058] The bottom metal layer preparation module 604 is used to prepare a metal material on the grating template layer to form a bottom metal layer.

[0059] The semiconductor layer preparation module 605 is configured to prepare a semiconductor material on the bottom metal layer to form a semiconductor layer.

[0060] The surface metal layer preparation module 606 is configured to prepare a metal material on the semiconductor layer to form a surface metal layer, and complete the preparation of the photodetector.

[0061] It is worth mentioning that each module involved in the embodiment is a logical module. In actual application, one logical unit can be one physical unit, or a part of one physical unit, or a combination of multiple physical units. In addition, in order to highlight the innovative part of the present application, units not closely related to solving the technical problems proposed in the present application are not introduced in the embodiment, but this does not mean that there are no other units in the embodiment.

[0062] It can be found that the embodiment is a system embodiment corresponding to the above-mentioned method embodiment, and the embodiment can be implemented in cooperation with the above-mentioned method embodiment. The related technical details and technical effects mentioned in the above embodiments are still effective in the embodiment. In order to reduce repetition, they will not be described here. Accordingly, the related technical details mentioned in the embodiment can also be applied to the above-mentioned embodiments.

[0063] Another embodiment of the present application provides a computer readable storage medium storing a computer program, wherein the computer program is executed by a processor to implement the preparation method of the laser-induced periodic structure enhanced photodetector in the above-mentioned method embodiments.

[0064] That is, those skilled in the art can understand that all or part of the steps of the above-mentioned embodiment methods can be completed by programs instructing related hardware. The programs are stored in a storage medium, and include a plurality of instructions for causing a device (which can be a single-chip microcomputer, a chip, etc.) or a processor to execute all or part of the steps of the method described in each embodiment of the present application. The foregoing storage medium includes a U disk, a mobile hard disk, a ROM (Read-Only Memory), a RAM (Random Access Memory), a magnetic disk or an optical disk, and various storage medium capable of storing program codes.

[0065] Those skilled in the art can understand that the above-mentioned embodiments are specific embodiments for implementing the present application, and in actual application, various changes can be made in form and details without departing from the spirit and scope of the present application.

Claims

1. A laser-induced periodic structure-enhanced photodetector, comprising: Comprise: From bottom to top, substrate layer (1), grating template layer (2), bottom surface metal layer (3), semiconductor layer (4) and surface metal layer (5); Due to the structural transmission of grating template layer (2), the bottom surface metal layer (3), semiconductor layer (4) and surface metal layer (5) deposited above the grating template layer (2) also have nano-grating structure; Injecting light into the surface metal layer (5), due to the nano-grating structure of the surface metal layer (5), the surface plasmon resonance is excited, thereby enhancing the local electric field, and further improving the absorption efficiency of the injected light, while the bottom surface metal layer (3), semiconductor layer (4) and surface metal layer (5) have a corrugated nano-grating structure to improve the efficiency of hot electron injection; The bottom surface metal layer (3), semiconductor layer (4) and surface metal layer (5) form a metal-semiconductor-metal structure and form a Fabry-Perot cavity structure. After the injected light enters the Fabry-Perot cavity structure, a standing wave is formed in the cavity, which interacts with the material to produce a cavity resonance enhancement effect, thereby improving the generation rate of photo-generated carriers; By adjusting the period of the grating structure of the grating template layer (2) and the thickness of the semiconductor layer (4), the multi-wavelength selection of the photodetector can be realized.

2. A laser-induced periodic structure enhanced photodetector as claimed in claim 1, wherein, The material of the substrate layer (1) is silicon, glass or aluminum oxide, the precursor of the grating template layer (2) is amorphous silicon, the material of the bottom surface metal layer (3) and the surface metal layer (5) is gold or silver, and the material of the semiconductor layer (4) is titanium dioxide.

3. A laser-induced periodic structure enhanced photodetector as claimed in claim 2, wherein, The thickness of the precursor of the grating template layer (2) is 50-300 nm, the thickness of the bottom surface metal layer (3) is 100 nm, the thickness of the semiconductor layer (4) is 100-200 nm, and the thickness of the surface metal layer (5) is 10-30 nm.

4. A method for preparing a photodetector with laser-induced periodic structure enhancement, characterized in that: Comprise: Clean the substrate as the substrate layer (1), and prepare a template precursor layer (6) on the substrate layer (1); Use pulsed laser scanning to irradiate the grating template precursor layer (6) to produce laser-induced surface periodic structure to form the grating template layer (2); Prepare a metal material on the grating template layer (2) to form the bottom surface metal layer (3); Prepare a semiconductor material on the bottom surface metal layer (3) to form the semiconductor layer (4); Prepare a metal material on the semiconductor layer (4) to form the surface metal layer (5), and complete the preparation of the photodetector.

5. The method of claim 4, wherein the laser-induced periodic structure-enhanced photodetector is prepared by the steps of: forming a first electrode on a substrate; forming a second electrode on the substrate; and forming a laser-induced periodic structure between the first electrode and the second electrode. The preparation method of the template precursor layer (6), the bottom surface metal layer (3), the semiconductor layer (4) and the surface metal layer (5) is physical vapor deposition, atomic layer deposition or electron beam evaporation.

6. The method for preparing a laser-induced periodic structure enhanced photodetector according to claim 5, wherein: The pulsed laser is femtosecond pulsed laser, picosecond pulsed laser or nanosecond pulsed laser.

7. The method for preparing a photodetector with laser-induced periodic structure enhancement according to claim 6, wherein: When preparing the template precursor layer (6) on the substrate layer (1), specifically use high vacuum magnetron sputtering thin film deposition technology to deposit silicon on the substrate layer (1) as the template precursor layer (6); When preparing the bottom surface metal layer (3) on the grating template layer (2), specifically use high vacuum magnetron sputtering thin film deposition technology to deposit gold to form the bottom surface metal layer (3); When the semiconductor layer (4) is prepared on the bottom metal layer (3), specifically, titanium dioxide is deposited by using high vacuum magnetron sputtering thin film deposition technology as the semiconductor layer (4); When the surface metal layer (5) is prepared on the semiconductor layer (4), specifically, gold is deposited by using high vacuum magnetron sputtering thin film deposition technology as the surface metal layer (5).

8. A method of fabricating a laser-induced periodic structure-enhanced photodetector according to any one of claims 4 to 7, wherein, After the preparation of the photoelectric detector is completed, electrodes are led out from the bottom metal layer (3) and the surface metal layer (5) respectively, the photoelectric detector is tested in performance by irradiating the surface metal layer (5) with injected light.

9. An apparatus for fabricating a laser-induced periodic structure-enhanced photodetector, comprising: Comprise: A substrate cleaning module for cleaning a substrate as a substrate layer; A template precursor layer preparation module for preparing a template precursor layer on the substrate layer; A grating template layer preparation module for using a pulsed laser to scan and irradiate the grating template precursor layer to generate a laser-induced surface periodic structure and form a grating template layer; A bottom metal layer preparation module for preparing a metal material on the grating template layer to form a bottom metal layer; A semiconductor layer preparation module for preparing a semiconductor material on the bottom metal layer to form a semiconductor layer; A surface metal layer preparation module for preparing a metal material on the semiconductor layer to form a surface metal layer and complete the preparation of the photoelectric detector.

10. A computer readable storage medium storing a computer program, characterized in that, The computer program, when executed by a processor, can implement the preparation method of the laser-induced periodic structure enhanced photoelectric detector according to any one of claims 4 to 8. The computer program, when executed by a processor, can implement the preparation method of the laser-induced periodic structure enhanced photoelectric detector according to any one of claims 4 to 8.

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