Micro LED micro display chip and manufacturing method thereof

Abstract

The present application provides a Micro LED micro display chip and a manufacturing method thereof. The Micro LED micro display chip includes: a driving panel; a plurality of LED units arranged on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, and a recessed area being formed between the LED tables and the corresponding grid holes; a heat insulation layer being arranged on the fence structure, the heat insulation layer having a plurality of heat insulation units, each of the heat insulation units being filled in the corresponding recessed area; a wavelength conversion layer including a plurality of wavelength conversion units, each of the wavelength conversion units being embedded in the corresponding heat insulation unit, and each of the wavelength conversion units being spaced apart from the corresponding LED unit. The present application helps to delay the aging of the wavelength conversion layer and improve the life of the LED chip.

Description

Technical Field

[0001] The present application relates to the field of LED display technology, and more specifically, to a Micro LED micro display chip and a manufacturing method thereof. Background Art

[0002] With the emergence of Micro LED display technology, miniaturization and high resolution of display devices such as augmented reality (AR) display devices, virtual reality (VR) display devices, near-eye display (NED) and head-up display (HUD) devices have become possible.

[0003] However, during the operation of the Micro LED micro display chip, the heat generated by the LED will cause the wavelength conversion material to age faster, resulting in a shorter lifespan of the Micro LED micro display chip. Summary of the Invention

[0004] This application provides a Micro LED micro display chip and a method for manufacturing the same. The following describes various aspects of this application.

[0005] In a first aspect, a Micro LED micro display chip is provided, comprising: a driving panel; a plurality of LED units arranged on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each of the LED units being capable of being driven individually by the driving panel; a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, and a recessed area being formed between the LED tables and the corresponding grid holes; a heat insulation layer being arranged on the fence structure, the heat insulation layer having a plurality of heat insulation units, each of the heat insulation units being filled in the corresponding recessed area; a wavelength conversion layer comprising a plurality of wavelength conversion units, each of the wavelength conversion units being embedded in the corresponding heat insulation unit, and each of the wavelength conversion units being spaced apart from the corresponding LED unit.

[0006] In some possible implementations, the thermal insulation unit includes a second thermal insulation unit, and the Micro LED micro display chip further includes: a transmissive reflective layer, the LED unit is arranged on a first side of the transmissive reflective layer, the second thermal insulation unit is arranged on the opposite side of the first side of the transmissive reflective layer, each of the wavelength conversion units is embedded in the corresponding second thermal insulation unit, and the transmissive reflective layer transmits the light emitted by the LED unit and reflects other colors of light.

[0007] In some possible implementations, the heat insulation unit further includes a first heat insulation unit, and the first heat insulation unit is disposed on a first side of the transmissive reflective layer.

[0008] In some possible implementations, the thermal insulation unit further includes a third thermal insulation unit, which is disposed on a side opposite to the first side of the transflective layer and located between the transflective layer and the second thermal insulation unit.

[0009] In some possible implementations, the fence structure includes a first-layer fence structure, a second-layer fence structure, and a third-layer fence structure, the third-layer fence structure is located between the first-layer fence structure and the second-layer fence structure, the first thermal insulation unit is arranged in the grid holes formed by the first-layer fence structure, the second thermal insulation unit is arranged in the grid holes formed by the second-layer fence structure, and the third thermal insulation unit is arranged in the grid holes formed by the third-layer fence structure.

[0010] In some possible implementations, the Micro LED micro display chip further includes: a reflective layer, at least disposed on a sidewall of the grid hole, the reflective layer capable of heat conduction, and the wavelength conversion layer is spaced apart from the reflective layer.

[0011] In some possible implementations, the thermal conductivity of the light-reflecting layer is greater than the thermal conductivity of the heat-insulating layer.

[0012] In some possible implementations, the wavelength conversion unit includes a first wavelength conversion unit, which is embedded in the corresponding heat insulation unit. The LED unit emits a first color light, and the first wavelength conversion unit converts the first color light into a second color light.

[0013] In some possible implementations, the wavelength conversion unit further includes a second wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a third color light.

[0014] In some possible implementations, the wavelength conversion unit further includes a third wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a fourth color light.

[0015] In a second aspect, a method for manufacturing a Micro LED micro display chip is provided, comprising: providing a driving panel; forming a plurality of LED units on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; forming a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, and a recessed area being formed between the LED tables and the corresponding grid holes; forming a heat insulation layer on the fence structure, the heat insulation layer having a plurality of heat insulation units, each of the heat insulation units being filled in the corresponding recessed area; forming a wavelength conversion layer, the wavelength conversion layer comprising a plurality of wavelength conversion units, each of the wavelength conversion units being embedded in the corresponding heat insulation unit, and each of the wavelength conversion units being spaced apart from the corresponding LED unit.

[0016] In some possible implementations, the forming of the fence structure having a plurality of grid holes includes: forming a first layer of fence structure having a plurality of first grid holes, the plurality of first grid holes being respectively arranged around the plurality of LED tables, and a first recessed area being formed between the LED tables and the corresponding first grid holes; the method further includes: forming a transmissive reflective layer on the first layer of fence structure, the transmissive reflective layer transmitting light emitted by the LED unit and reflecting light of other colors; forming a second layer of fence structure having a plurality of second grid holes on the transmissive reflective layer; forming a second heat insulation layer on the second layer of fence structure, the second heat insulation layer having a plurality of second heat insulation units, each of the second heat insulation units being filled in the corresponding second grid hole; the forming of the wavelength conversion layer includes: forming the wavelength conversion layer in the second heat insulation layer, each of the wavelength conversion units being embedded in the corresponding second heat insulation unit.

[0017] In some possible implementations, forming a thermal insulation layer on the fence structure includes: forming a first thermal insulation layer on the first-layer fence structure, the first thermal insulation layer having a plurality of first thermal insulation units, and each of the first thermal insulation units is filled in the corresponding first recessed area.

[0018] In some possible implementations, the forming of the second thermal insulation layer on the second-layer fence structure includes: forming a first sub-thermal insulation layer on the second-layer fence structure, the first sub-thermal insulation layer filling the second grid holes, and the top surface of the first sub-thermal insulation layer is lower than the top surface of the second-layer fence structure; forming a plurality of second recessed areas on the first sub-thermal insulation layer, each of the second recessed areas being located in a corresponding second grid hole; the forming of the wavelength conversion layer includes: forming the wavelength conversion layer on the first sub-thermal insulation layer, each of the wavelength conversion units filling the corresponding second recessed areas; forming a second sub-thermal insulation layer on the first sub-thermal insulation layer, the second sub-thermal insulation layer covering the wavelength conversion layer, and the top surface of the second sub-thermal insulation layer being flush with the top surface of the second-layer fence structure; wherein the first sub-thermal insulation layer and the second sub-thermal insulation layer form the second thermal insulation layer.

[0019] In some possible implementations, before forming a second-layer fence structure having a plurality of second grid holes on the transmissive reflective layer, the method further includes: forming a third thermal insulation layer on the transmissive reflective layer, wherein the third thermal insulation layer is located between the transmissive reflective layer and the second thermal insulation layer; forming a plurality of annular grooves on the third thermal insulation layer, wherein each annular groove passes through the third thermal insulation layer and the transmissive reflective layer, and each annular groove is arranged around the first grid holes; and forming a third-layer fence structure on the first-layer fence structure, wherein the third-layer fence structure is filled in each annular groove, and the third-layer fence structure is located between the first-layer fence structure and the second-layer fence structure.

[0020] In some possible implementations, after forming a third fence structure on the first fence structure, the method further includes: forming the second fence structure on the third fence structure; and forming the second insulation layer on the third insulation layer.

[0021] In some possible implementations, before forming the thermal insulation layer on the fence structure, the method further includes: forming a reflective layer on the fence structure, the reflective layer being arranged at least on the side walls of the grid holes, the reflective layer being capable of heat conduction, and the wavelength conversion layer being spaced apart from the reflective layer; wherein the thermal conductivity of the reflective layer is greater than the thermal conductivity of the thermal insulation layer.

[0022] The embodiment of the present application provides a Micro LED micro display chip, comprising: a driving panel; a plurality of LED units arranged on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each LED unit being capable of being driven individually by the driving panel; a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, with recessed areas formed between the LED tables and the corresponding grid holes; a heat insulation layer arranged on the fence structure, the heat insulation layer having a plurality of heat insulation units, each heat insulation unit being filled in a corresponding recessed area; a wavelength conversion layer comprising a plurality of wavelength conversion units, each wavelength conversion unit being embedded in a corresponding heat insulation unit, and each wavelength conversion unit being spaced apart from the corresponding LED unit. This solution embeds the wavelength conversion unit in the corresponding heat insulation unit, so that each wavelength conversion unit is spaced apart from the corresponding LED unit, thereby helping to reduce or limit the heat generated by the LED unit from being transferred to the corresponding wavelength conversion unit, thereby helping to delay the aging of the wavelength conversion layer and improve the life of the Micro LED micro display chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip provided by related technology.

[0024] Figure 2 yes Figure 1 Cross-sectional view of the Micro LED micro display chip along the AA cutting line.

[0025] Figure 3 This is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip provided in an embodiment of the present application.

[0026] Figure 4 yes Figure 3 Cross-sectional view of the Micro LED micro display chip along the CC cutting line.

[0027] Figure 5 This is a schematic diagram of the cross-sectional structure of another Micro LED micro display chip provided in an embodiment of the present application.

[0028] Figure 6 This is a schematic diagram of the cross-sectional structure of another Micro LED micro display chip provided in an embodiment of the present application.

[0029] Figure 7 This is a flow chart of the method for manufacturing a Micro LED micro display chip provided in an embodiment of the present application.

[0030] Figure 8 yes Figure 7 A schematic flow chart of a possible implementation of the preparation method.

[0031] Figure 9a-9c yes Figure 3 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages.

[0032] Figure 10a-10f yes Figure 5 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages.

[0033] Figure 11a-Figure 11f yes Figure 6 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments.

[0035] It should be noted that in the description of this application, the terms "on...", "over...", "above...", and "over..." should be interpreted in the broadest sense, meaning that the description containing these terms is interpreted as "the component can be set on another component in direct contact, or there can be an intermediate component or layer between the components."

[0036] Furthermore, for ease of description, this application may also use spatially relative terms such as "below," "beneath," "under," "on," "above," "above," "lower," "upper," and the like to describe the relationship of one element or component to another element or component illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90° or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0037] As used herein, the term "layer" refers to a portion of a material comprising an area having a certain thickness. A layer may extend over the entire underlying or superstructure, or may extend over a localized area of ​​the underlying or superstructure. Furthermore, a layer may be a region of a continuous structure, either homogeneous or heterogeneous, whose thickness is less than that of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a tapered surface.

[0038] In recent years, Micro-LED has attracted widespread attention due to its low power consumption, fast response, long lifespan, and high light efficiency. Micro-LED display technology is a self-luminous display technology that integrates arrayed micron-sized LED units (also known as LED units) on an active addressing drive panel to achieve individual control and lighting to output display images.

[0039] Micro LED display has many advantages such as self-luminescence, high efficiency, low power consumption, high integration, and high stability. It is also small in size, highly flexible, and easy to disassemble and merge. It can be applied to any existing display application from small to large size.

[0040] Micro LEDs, also known as micro-light-emitting diodes, range in size from 0.1 to 10 microns. The emergence of Micro LED display technology has made it possible to miniaturize and achieve higher resolution in display devices such as augmented reality (AR), virtual reality (VR), near-eye displays (NED), and head-up displays (HUD).

[0041] In related technologies, a Micro LED micro display chip generally includes a driving panel, a plurality of LED units, and a fence structure with a plurality of grid holes. The plurality of LED units are arranged on one side surface of the driving panel, the fence structure is arranged on the side surface of the driving panel facing the LED units, and the plurality of grid holes correspond to each other to accommodate the plurality of LED units. Figure 1 Provide explanation.

[0042] Figure 1 This is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip. Figure 2 yes Figure 1 The cross-sectional view of the Micro LED micro display chip along the AA section line. Figure 1 As shown, the Micro LED micro display chip 100 may include a driving panel 110, a plurality of LED units 120 and a fence structure 130 having a plurality of grid holes.

[0043] The drive panel 110 may be a display substrate including a complementary metal-oxide-semiconductor (CMOS) silicon substrate or a thin film transistor (TFT) glass substrate. For example, the drive panel 110 may include a first substrate, a plurality of drive circuits (not shown in the drawings) located on a side surface of the first substrate, and a plurality of cathodes 112. The plurality of drive circuits are electrically connected to the plurality of cathodes 112 in a one-to-one correspondence, and each drive circuit includes a CMOS device or a TFT device, for example.

[0044] The plurality of LED units 120 are spaced apart from each other and are disposed on one side surface of the driving panel 110. The plurality of LED units 120 may be distributed in an array.

[0045] The fence structure 130 is located on a surface of the driver panel 110 facing the LED units 120. The fence structure 130 has a plurality of grid holes 131. The number of grid holes 131 can be arranged in a one-to-one correspondence with the number of LED units 120. The plurality of grid holes 131 can be arranged around the plurality of LED tables, so that a recessed area is formed between the LED tables and the corresponding grid holes 131. The recessed area can be bowl-shaped or trumpet-shaped.

[0046] At least one sidewall of the fence structure 130 is provided with a reflective layer 132. The reflective layer 132 reflects light and conducts heat. The reflective layer 132 is made of a heat-conducting material, such as aluminum or other metal reflective material.

[0047] The Micro LED microdisplay chip 100 may further include a bonding layer 140. The P-type semiconductor layer of the LED unit 120 is adhered or bonded to the surface of the driving panel 110 via the bonding layer 140. This bonding constitutes a common anode for the LED units 120. Based on this, the driving panel 110 can apply an anode voltage to the multiple LED units 120 via the bonding layer 140, and apply a cathode voltage to each of the multiple LED units 120 via the multiple cathodes 112, thereby driving the multiple LED units 120 to emit light individually.

[0048] The Micro LED micro display chip 100 may further include a passivation layer 150 . The material of the passivation layer 150 may include an inorganic material or an organic material.

[0049] The Micro LED microdisplay chip 100 further includes an electrode layer 160, which is located on a surface of the passivation layer 150 facing away from the driving panel 110. The electrode layer 160 may include a plurality of first electrodes 161. The plurality of first electrodes 161 are disposed between the plurality of LED units 120 and the plurality of cathodes 112 in a one-to-one correspondence.

[0050] The Micro LED micro display chip 100 further includes a wavelength conversion layer 170 , which is filled in the grid holes 131 .

[0051] In some examples, the wavelength conversion layer 170 includes three wavelength conversion units, which are correspondingly filled in the grid holes 131. The three wavelength conversion units can convert the first color light emitted by the LED unit 120 into a second color light, a third color light, and a fourth color light, respectively. For example, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, a full-color display of the MicroLED micro-display chip 100 can be achieved. It should be understood that if the first color light is blue light, then the corresponding grid holes emitting blue light do not need to be filled with wavelength conversion units.

[0052] During long-term display operation of the Micro LED display chip 100, the LED unit 120 generates heat. The heat generated by the LED unit 120 accelerates the aging of the wavelength conversion layer 170, thereby shortening the life of the Micro LED display chip.

[0053] Therefore, it is necessary to design a technical solution for a Micro LED micro display chip that delays the aging of the wavelength conversion layer. The following is a detailed introduction to the Micro LED micro display chip in the embodiment of the present application with reference to the accompanying drawings.

[0054] Figure 3 This is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip provided in an embodiment of the present application. Figure 4 yes Figure 3 The cross-sectional view of the Micro LED micro display chip along the CC section line. The following takes the common anode structure as an example, combined with Figure 3 The Micro LED micro display chip of the embodiment of the present application is described in detail. Figure 3 As shown, the Micro LED micro display chip 300 may include: a driving panel 310, a plurality of LED units 320, a fence structure 330, a heat insulation layer 370 and a wavelength conversion layer 380.

[0055] The drive panel 310 may be a display substrate including a CMOS silicon substrate or a TFT glass substrate. For example, the drive panel 310 may include a first substrate, a plurality of drive circuits (not shown in the drawings) located on a surface of one side of the first substrate, and a plurality of contacts 312, which may be cathode contacts. The plurality of drive circuits are electrically connected to the plurality of cathode contacts 312 in a one-to-one correspondence, and each drive circuit includes a CMOS device or a TFT device, for example.

[0056] The plurality of LED units 320 are spaced apart from each other and disposed on one side of the driving panel 310. Typically, the plurality of LED units 320 may be distributed in an array.

[0057] The fence structure 330 is located on the side of the driver panel 310 facing the LED units 320, that is, on the same side of the driver panel 310 as the LED units 320. The fence structure 330 includes a plurality of grid holes 331, and the number of grid holes 331 can be arranged in a one-to-one correspondence with the number of LED units 320. The plurality of grid holes 331 can be arranged around the plurality of LED tables, so that a recessed area is formed between the LED table and the corresponding grid holes 331. The recessed area can be bowl-shaped or trumpet-shaped.

[0058] The fence structure 330 can prevent light crosstalk between the plurality of LED units 320. For example, the material of the fence structure 330 can be a light-absorbing material such as black photoresist, color photoresist, resin, etc.

[0059] In some implementations, the Micro LED microdisplay chip 300 may include a reflective layer 332 . The reflective layer 332 covers at least the sidewalls of the fence structure 330 . The thermal conductivity of the reflective layer 332 may be, for example, 1 W / (m·K). The reflective layer 332 may be made of a metal material such as aluminum. The reflective layer 332 can conduct heat to the driver panel 310 to quickly dissipate the heat.

[0060] The reflective layer 332 reflects light and conducts heat. The reflective layer 332 is typically angled relative to the light emission direction of the LED unit 320. By providing the reflective layer 332 on the sidewalls of the fence structure 330, the reflective layer 332 can be used to reflect more of the light emitted by the LED unit 320 toward the light emission direction of the LED unit 320, thereby improving the light extraction efficiency and brightness of the Micro LED microdisplay chip 300.

[0061] The heat insulating layer 370 is disposed on the fence structure 330 , and the heat insulating layer 370 has a plurality of heat insulating units, each of which is filled in a corresponding recessed area. In other words, the heat insulating layer 370 is filled in the grid holes 331 .

[0062] In some implementations, the thermal conductivity of the light-reflecting layer 332 is greater than the thermal conductivity of the thermal insulation layer 370. The thermal conductivity of the thermal insulation layer 370 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K).

[0063] The insulation layer 370 is made of a heat-insulating material. For example, the insulation layer 370 can be made of any one or a combination of the following materials: methyl methacrylate (MMA), polymethyl methacrylate (PMMA), epoxy resin, styrene, and polyurethane. It is understood that the insulation layer 370 is made of a transparent material with good light transmittance.

[0064] The wavelength conversion layer 380 is embedded within the thermal insulation layer 370 and spaced apart from the LED units 320. Specifically, the wavelength conversion layer 380 includes multiple wavelength conversion units, each embedded within a corresponding thermal insulation unit and spaced apart from a corresponding LED unit 320. The spacing between the wavelength conversion layer 380 and the reflective layer 332 effectively prevents heat from being transferred from the reflective layer 332 or the LED units 320 to the wavelength conversion layer 380, thereby extending the lifespan of the Micro LED microdisplay chip 300.

[0065] In some examples, the wavelength conversion layer 380 includes three wavelength conversion units, which are correspondingly filled in the grid holes 331. The three wavelength conversion units can convert the first color light emitted by the LED unit 320 into a second color light, a third color light, and a fourth color light, respectively. For example, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, a full-color display of the MicroLED micro-display chip 300 can be achieved. It should be understood that if the first color light is blue light, then the grid holes 331 that emit blue light do not need to be filled with wavelength conversion units.

[0066] In some implementations, the wavelength conversion layer 380 may include a plurality of first wavelength conversion units, a plurality of second wavelength conversion units, and a plurality of third wavelength conversion units. The first wavelength conversion unit is embedded in the corresponding heat-insulating unit. The LED unit 320 emits a first color light, and the first wavelength conversion unit converts the first color light into a second color light. The second wavelength conversion unit is embedded in the corresponding heat-insulating unit. The second wavelength conversion unit converts the first color light into a third color light. The third wavelength conversion unit is embedded in the corresponding heat-insulating unit. The third wavelength conversion unit converts the first color light into a fourth color light.

[0067] In some implementations, the Micro LED micro display chip 300 may further include a bonding layer 340 , a passivation layer 350 , and an electrode layer 360 .

[0068] In a common anode configuration, the anode pins (contacts) of all LED units 320 are connected together and connected to the positive power supply. Each cathode contact 312 is provided in the driving panel 310, and each cathode contact 312 can be electrically connected to the corresponding LED unit 320 through a semiconductor material layer (e.g., a semiconductor material layer doped with N or P ions). For example, the P-type semiconductor layer of the LED unit 320 is attached or bonded to the driving panel 310 through a continuous bonding layer 340, that is, the bonding can constitute a common anode of the LED unit 320. Based on this, the driving panel 310 can apply an anode voltage to the multiple LED units 320 through the bonding layer 340, and apply a cathode voltage to the multiple LED units 320 individually through the multiple cathode contacts 312, thereby driving the multiple LED units 320 to emit light individually.

[0069] The material of the passivation layer 350 may include an inorganic material or an organic material. For example, the material of the passivation layer 350 may include any one or a combination of silicon dioxide (SiO2), aluminum oxide (Al2O3), zirconium dioxide (ZrO2), silicon nitride (Si3N4), and hafnium oxide (HfO2). The material of the passivation layer 350 may also include any one or a combination of black photoresist, color photoresist, and polyimide.

[0070] The electrode layer 360 is located on a side of the passivation layer 350 away from the driving panel 310 , and may include a plurality of first electrodes 361 . The plurality of first electrodes 361 are disposed between the plurality of LED units 320 and the plurality of cathode contacts 312 in a one-to-one correspondence.

[0071] From the above content, it can be seen that this solution embeds the wavelength conversion unit in the corresponding heat insulation unit so that each wavelength conversion unit is spaced apart from the corresponding LED unit 320, thereby helping to reduce or limit the heat generated by the LED unit 320 from being conducted to the corresponding wavelength conversion unit, thereby helping to delay the aging of the wavelength conversion layer 380 and improving the service life of the Micro LED micro display chip.

[0072] Figure 5 yes Figure 3 A cross-sectional structural diagram of another possible implementation of a Micro LED micro display chip. Figure 5As shown, the Micro LED microdisplay chip 300 may further include a transflective layer 390. The thermal insulation layer 370 may include a first thermal insulation layer 372 and a second thermal insulation layer 374. The second thermal insulation layer 374 may include a second thermal insulation unit. The LED unit 320 is disposed on a first side of the transflective layer 390, and the second thermal insulation unit is disposed on a side opposite to the first side of the transflective layer 390. Each wavelength conversion unit in the wavelength conversion layer 380 is embedded in a corresponding second thermal insulation unit. The transflective layer 390 transmits light emitted by the LED unit 320 and reflects light of other colors.

[0073] It should be understood that the transflective layer 390 is located between the first insulation layer 372 and the second insulation layer 374. That is, a first side of the transflective layer 390 is the first insulation layer 372 and the plurality of LED units 320, and the second insulation layer 374 is located opposite the first side of the transflective layer 390.

[0074] The first insulation layer 372 includes a plurality of first insulation units, and the second insulation layer 374 includes a plurality of second insulation units. Each first insulation unit covers the LED unit 320, and each wavelength conversion unit in the wavelength conversion layer 380 is embedded in the corresponding second insulation unit.

[0075] The transflective layer 390 may be a distributed Bragg reflector (DBR) layer made of inorganic materials. The DBR is composed of inorganic materials with high and low refractive indices, and can reflect light upward, increase brightness, and provide heat insulation.

[0076] The DBR (Deep Reflector) utilizes thin films of varying refractive indices stacked in a periodic pattern. When light passes through these films, the light reflected from each layer constructively interferes due to shifts in phase angle. These light then combine to produce intensely reflected light, increasing brightness. Because inorganic materials have poor thermal conductivity, the DBR transflective layer 390 provides thermal insulation.

[0077] exist Figure 5 In the embodiment, a fence structure 330 (also referred to as the first fence structure 330) and a second fence structure 338 are provided on the upper and lower sides of the transflective layer 390. A reflective layer 332 (also referred to as the first reflective layer 332) is provided on at least the sidewalls of the fence structure 330, and a second reflective layer 394 is provided on at least the sidewalls of the second fence structure 338. Heat generated by the LED unit 320 can be conducted through the reflective layer 332 on the lower side of the transflective layer 390 to the drive panel 310 for dissipation. The second thermal insulation layer 374 and the second reflective layer 394 on the upper side of the transflective layer 390 can dissipate heat, and the grid materials of the fence structure 330 and the second fence structure 338 can also provide thermal insulation.

[0078] Figure 6 yes Figure 3 A cross-sectional structural diagram of another possible implementation of a Micro LED micro display chip. Figure 6 As shown, the thermal insulation unit further includes a third thermal insulation unit, which is disposed on the opposite side of the first side of the transflective layer 390 and between the transflective layer 390 and the second thermal insulation unit. That is, along the light emission direction of the LED unit 320, the thermal insulation layer 370 further includes a third thermal insulation layer 376, which includes multiple third thermal insulation units. The first thermal insulation layer 372 covers the outside of the LED unit 320, the third thermal insulation layer 376 is located between the transflective layer 390 and the second thermal insulation layer 374, the second thermal insulation layer 374 is disposed on the third thermal insulation layer 376, and the wavelength conversion layer 380 is embedded in the second thermal insulation layer 374.

[0079] The first side of the transflective layer 390 is surrounded by the first thermal insulation layer 372 and the plurality of LED units 320. Opposite the first side of the transflective layer 390 is the second thermal insulation layer 374. The transflective layer 390 may be a DBR layer made of an inorganic material. A DBR is composed of inorganic materials with different high and low refractive indices, and it can reflect light upward, increase brightness, and provide thermal insulation.

[0080] Continue to see Figure 6 The Micro LED microdisplay chip also includes a third-layer fence structure 337, with a third light-reflecting layer 396 disposed at least on the sidewalls of the third-layer fence structure 337. The third-layer fence structure 337 is located between the fence structure 330 (also referred to as the first-layer fence structure 330) and the second-layer fence structure 338. The first thermal insulation unit is disposed within the grid holes formed by the fence structure 330, the second thermal insulation unit is disposed within the grid holes formed by the second-layer fence structure 338, and the third thermal insulation unit is disposed within the grid holes formed by the third-layer fence structure 337. In other words, the first thermal insulation layer 372 is filled in the grid holes formed by the fence structure 330, the second thermal insulation layer 374 is filled in the grid holes formed by the second-layer fence structure 338, and the third thermal insulation layer 376 is filled in the grid holes formed by the third-layer fence structure 337.

[0081] In some implementations, the fence structure 330, the second-layer fence structure 338, and the third-layer fence structure 337 are interconnected, and the grid holes have a good light-crosstalk-proofing effect. The reflective layer 332, the second reflective layer 394, and the third reflective layer 396 on the upper and lower sides of the transmissive reflective layer 390 are also interconnected. The heat generated by the LED unit 320 can be dissipated through the reflective layer 332 on the lower side of the transmissive reflective layer 390 to the drive panel 310. Some of the heat can also be dissipated through the heat-conducting upper surfaces of the second reflective layer 394 and the third reflective layer 396 on the upper side of the transmissive reflective layer 390. The surface of the second thermal insulation layer 374 on the upper side of the transmissive reflective layer 390 can dissipate heat. The grid material of the fence structure 330 has good thermal insulation properties and can provide a heat-insulating effect. It should be understood that the third thermal insulation layer 376 includes multiple annular grooves, each of which penetrates the third thermal insulation layer 376 and the transmissive reflective layer 390, and each annular groove is arranged around the first grid hole; the third layer fence structure 337 is filled in each annular groove, so that the fence structures on the upper and lower sides of the transmissive reflective layer 390 are connected.

[0082] Combined with the above Figures 1 to 6 The device embodiment of the present application is described in detail. Figures 7 to 10f The method embodiment of the present application will be described in detail. It should be understood that the description of the method embodiment corresponds to the description of the device embodiment, and therefore, for parts not described in detail, reference can be made to the previous device embodiment.

[0083] Figure 7 Schematic diagram of the process of manufacturing a Micro LED micro display chip according to an embodiment of the present application. Figure 7 As shown, the method may mainly include steps S710 to S750, which are described in detail below.

[0084] It should be pointed out that the size of the serial numbers of each step in the embodiment of the present application does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention.

[0085] In step S710 , a driving panel is provided.

[0086] The driving panel 310 may be a display substrate including a CMOS silicon substrate or a TFT glass substrate. The plurality of LED units 320 may be distributed in an array.

[0087] In step S720 , a plurality of LED units are formed on the driving panel. The plurality of LED units have a plurality of LED mesas corresponding to each other. Each LED unit can be driven independently by the driving panel.

[0088] In step S730 , a fence structure having a plurality of grid holes is formed. The plurality of grid holes are respectively arranged around a plurality of LED mesas, and recessed areas are formed between the LED mesas and the corresponding grid holes.

[0089] In step S740 , a heat insulation layer is formed on the fence structure, wherein the heat insulation layer has a plurality of heat insulation units, and each heat insulation unit is filled in a corresponding recessed area.

[0090] In step S750 , a wavelength conversion layer is formed. The wavelength conversion layer includes a plurality of wavelength conversion units. Each wavelength conversion unit is embedded in a corresponding heat insulation unit, and each wavelength conversion unit is spaced apart from a corresponding LED unit.

[0091] In some implementations, the outer wall of the fence structure may be coated to form a reflective layer. The reflective layer is made of a heat-conducting material and can conduct heat to the drive panel.

[0092] In some implementations, embedding the wavelength conversion layer in the thermal insulation layer may include: etching a filling hole to be filled with the wavelength conversion layer in the thermal insulation layer, the filling hole being spaced apart from the LED unit and the reflective layer; and filling the wavelength conversion layer in the filling hole.

[0093] In the embodiments of the present application, a heat-insulating layer is provided within the grid holes of the fence structure. The heat-insulating layer is made of a heat-insulating material. The wavelength conversion layer, embedded within the heat-insulating layer, is spaced apart from the LED units. Heat generated by the LED units is preferentially conducted away through the driver panel, thereby reducing or limiting the heat generated by the LED units from being conducted to the wavelength conversion layer. This embodiment of the present application helps to delay the aging of the wavelength conversion layer and extend the life of the LED chips.

[0094] The following takes the common anode structure as an example and combines some possible implementation methods of the embodiments of the present application to further illustrate the method for manufacturing the Micro LED micro display chip according to the embodiment of the present application.

[0095] Figure 8 yes Figure 7 A schematic flow chart of a possible implementation of the preparation method. Figure 9a-9c Too Figure 3 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. Figure 3 The Micro LED micro display chip is a single-layer heat-insulating coating type. Figure 8 The preparation process method may include steps S810 to S840, which are described in detail below.

[0096] In step S810, a grid network is manufactured based on the fence structure and the light-emitting layer, and a plurality of grid holes are filled with a heat-insulating material.

[0097] like Figure 9a As shown, a plurality of spaced-apart LED units 320 are disposed on one side of a driver panel 310. A fence structure 330 is formed on the side of the driver panel 310 facing the LED units 320. The outer wall of the fence structure 330 is coated to form a reflective layer 332. The fence structure 330 and the reflective layer 332 define a plurality of grid holes 331, so that the plurality of LED units 320 are correspondingly accommodated in the plurality of grid holes 331. The reflective layer is made of a thermally conductive material, which can conduct heat from the reflective layer to the driver panel.

[0098] The space in the grid holes 331 outside the LED unit is covered with a heat insulating layer 370. The heat insulating layer 370 may have a thermal conductivity of, for example, 0.12 W / (m·K) or 0.05 W / (m·K).

[0099] In step S820, a second recessed area 371 to be filled with the wavelength conversion layer is etched in the heat insulation layer 370. The second recessed area 371 is spaced apart from the LED unit 320 and the reflective layer 332. Figure 9b shown.

[0100] In step S830, the wavelength conversion layer 380 is filled in the second recessed area 371. Figure 9c shown.

[0101] Since the wavelength conversion layer 380 is spaced apart from the LED unit 320 and the reflective layer 332 , the heat generated by the LED unit will be preferentially conducted to the driving panel through the reflective layer 332 with good thermal conductivity and then dissipated.

[0102] In step S840, the wavelength conversion layer 380 in the plurality of grid holes 331 is covered with a heat insulating material to flatten the surface of the display chip. Figure 3 shown.

[0103] In some examples, the wavelength conversion layer 380 includes three wavelength conversion units, which are correspondingly filled in the grid holes 331. The three wavelength conversion units can convert the first color light emitted by the LED unit 320 into a second color light, a third color light, and a fourth color light, respectively. For example, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, a full-color display of the MicroLED micro-display chip 300 can be achieved. It should be understood that if the first color light is blue light, then the grid holes 331 that emit blue light do not need to be filled with wavelength conversion units.

[0104] In this embodiment, a heat-insulating layer is provided within the grid holes of the fence structure. The heat-insulating layer is made of a heat-insulating material. The wavelength conversion layer, embedded within the heat-insulating layer, is spaced apart from the LED units. Heat generated by the LED units is preferentially conducted through the reflective layer, which has good thermal conductivity, to the driver panel for dissipation. This embodiment reduces the amount of heat generated by the LED units that is transferred to the wavelength conversion layer, helping to slow down the aging of the wavelength conversion layer and extend the life of the LED chips.

[0105] In some implementations, along the light-emitting direction of the LED units, the multiple grid holes can be divided into a plurality of first grid holes and a corresponding plurality of second grid holes, and the thermal insulation layer can be divided into a first thermal insulation layer and a second thermal insulation layer, with the multiple LED units correspondingly accommodated within the plurality of first grid holes. In other words, the Micro LED microdisplay chip can have a double-layer thermal insulation coating.

[0106] Figure 10a-10f yes Figure 5 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. Figure 5 The Micro LED micro display chip is a double-layer thermal insulation coating type. Figure 5 The method for preparing the Micro LED micro display chip may include steps S1010 to S1070, which are described in detail below.

[0107] In step S1010 , a grid network is manufactured based on the fence structure 330 and the reflective layer 332 , and a first material (ie, a heat-insulating material) is filled into a plurality of first grid holes 334 to obtain a first heat-insulating layer 372 .

[0108] like Figure 10a As shown, a plurality of spaced-apart LED units 320 are disposed on one side of the driver panel 310. A first barrier structure is formed on the side of the driver panel 310 facing the LED units 320. The outer wall of the first barrier structure is coated to form a reflective layer 332. The first barrier structure and the reflective layer 332 define a plurality of first grid holes 334. The plurality of first grid holes 334 are disposed around the plurality of LED tables, forming first recessed areas between the LED tables and the corresponding first grid holes 334. The reflective layer 332 is made of a thermally conductive material, enabling heat to be transferred to the driver panel 310.

[0109] The plurality of first grid holes 334 are filled with a thermal insulation material to form a first thermal insulation layer 372. The thermal conductivity of the first thermal insulation layer 372 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K). For example, the material of the first thermal insulation layer 372 may be any one or a combination of the following materials: methyl methacrylate (MMA), polymethyl methacrylate (PMMA), epoxy resin, styrene, and polyurethane.

[0110] In step S1020, a transflective layer 390 is disposed above the plurality of first grid holes 334 and the first heat insulation layer 372, as shown in FIG. Figure 10b The transflective layer 390 transmits the light emitted by the LED unit 320 and reflects light of other colors.

[0111] Transflective layer 390 is a DBR layer made of inorganic materials. Composed of inorganic materials with varying degrees of refractive index, DBR layer 390 reflects light upward, increasing brightness. Inorganic materials offer excellent thermal insulation, and transflective layer 390 further provides excellent insulation for materials above and below.

[0112] In step S1030, a second layer of fence structure 338 having a plurality of second grid holes 336 is formed on the transmissive reflective layer 390, and a second light reflecting layer 394 is provided at least on the sidewall of the second layer of fence structure 338. The plurality of second grid holes 336 correspond to the plurality of first grid holes 334 one by one, as shown in FIG. Figure 10c shown.

[0113] In step S1040, the plurality of second grid holes 336 are filled with insulation material to obtain a first sub-insulation layer (i.e., the initial insulation layer 374). The first sub-insulation layer is filled in the second grid holes 336, and the top surface of the first sub-insulation layer is lower than the top surface of the second layer of the fence structure. Figure 10d shown.

[0114] In step S1050, a second recessed area 371 to be filled with the wavelength conversion layer is etched in the first sub-insulation layer. The second recessed area 371 is spaced apart from the LED unit 320 and the reflective layer 332. Each second recessed area 371 is located in a corresponding second grid hole 336. Figure 10e shown.

[0115] In step S1060, the second recessed area 371 is filled with a wavelength conversion layer 380, as shown in FIG. Figure 10f shown.

[0116] Since the wavelength conversion layer 380 is spaced apart from the LED unit 320 and the reflective layer 332 , the heat generated by the LED unit will be preferentially conducted to the driving panel through the reflective layer with good thermal conductivity and then dissipated.

[0117] In step S1070, a second sub-insulation layer is formed on the first sub-insulation layer. The second sub-insulation layer covers the wavelength conversion layer 380. The top surface of the second sub-insulation layer is flush with the top surface of the second fence structure. The first sub-insulation layer and the second sub-insulation layer form a second insulation layer 374, thereby flattening the surface of the Micro LED micro display chip. Figure 5 shown.

[0118] In an embodiment of the present application, a transmissive reflective layer is formed on the first fence structure, the transmissive reflective layer transmitting light emitted by the LED unit and reflecting light of other colors; a second fence structure having a plurality of second grid holes is formed on the transmissive reflective layer; a second thermal insulation layer is formed on the second fence structure, the second thermal insulation layer having a plurality of second thermal insulation units, each second thermal insulation unit being filled within a corresponding second grid hole; and a wavelength conversion layer is formed, including: forming a wavelength conversion layer within the second thermal insulation layer, with each wavelength conversion unit being embedded within a corresponding second thermal insulation unit. Since the thermal insulation layer is disposed within the grid holes formed by the fence structure, the thermal insulation layer is composed of a thermal insulation material and is divided into a first thermal insulation layer below the DBR transmissive reflective layer and a second thermal insulation layer above the DBR transmissive reflective layer. The wavelength conversion layer embedded within the second thermal insulation layer is spaced apart from the LED unit. Heat generated by the LED unit is preferentially conducted to the driver panel through the reflective layer with good thermal conductivity and then dissipated. The DBR transmissive reflective layer further insulates the heat from the LED unit. The embodiments of the present application can reduce the heat generated by the LED unit and transferred to the wavelength conversion layer, thereby helping to delay the aging of the wavelength conversion layer and increase the life of the LED chip.

[0119] Figure 11a-Figure 11f yes Figure 6 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. Figure 6 The Micro LED micro display chip is a three-layer heat-insulating coating type. Along the light-emitting direction of the LED unit, the multiple grid holes can be divided into multiple first grid holes, and corresponding multiple second grid holes and multiple third grid holes. The heat insulation layer is divided into a first heat insulation layer, a second heat insulation layer and a third heat insulation layer, and the multiple LED units are correspondingly accommodated in the multiple first grid holes. The third layer of the fence structure is located between the first layer of the fence structure and the second layer of the fence structure. The first heat insulation layer is arranged in the first grid hole formed by the first layer of the fence structure, the second heat insulation layer is arranged in the second grid hole formed by the second layer of the fence structure, and the third heat insulation layer is arranged in the third grid hole formed by the third layer of the fence structure. Figure 6 The method for preparing the Micro LED micro display chip may include steps S1210 to S1270, which are described in detail below.

[0120] In step S1210, a grid network is manufactured based on the fence structure and the reflective layer, and a plurality of first grid holes are filled with a heat insulating material to obtain a first heat insulating layer.

[0121] like Figure 10aAs shown, a plurality of spaced-apart LED units 320 are disposed on one side of the driver panel 310. A first barrier structure is formed on the side of the driver panel 310 facing the LED units 320. The outer wall of the first barrier structure is coated to form a reflective layer 332. The first barrier structure and the reflective layer 332 define a plurality of first grid holes 334. The plurality of first grid holes 334 are disposed around the plurality of LED tables, forming first recessed areas between the LED tables and the corresponding first grid holes 334. The reflective layer 332 is made of a thermally conductive material, enabling heat to be transferred to the driver panel 310.

[0122] The plurality of first grid holes 334 are filled with a thermal insulation material to form a first thermal insulation layer 372. The thermal conductivity of the first thermal insulation layer 372 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K). For example, the material of the first thermal insulation layer 372 may be any one or a combination of the following materials: methyl methacrylate (MMA), polymethyl methacrylate (PMMA), epoxy resin, styrene, and polyurethane.

[0123] In step S1220, a transflective layer 390 is disposed above the plurality of first grid holes 334 and the first heat insulation layer 372, as shown in FIG. Figure 10b The transflective layer 390 transmits the light emitted by the LED unit 320 and reflects light of other colors.

[0124] Transflective layer 390 is a DBR layer made of inorganic materials. Composed of inorganic materials with varying degrees of refractive index, DBR layer 390 reflects light upward, increasing brightness. Inorganic materials offer excellent thermal insulation, and transflective layer 390 further provides excellent insulation for materials above and below.

[0125] In step S1230, a heat insulating material is coated on the transmissive reflective layer 390 to obtain a third heat insulating layer 376, as shown in FIG. Figure 11a shown.

[0126] In step S1240, the third heat-insulating layer 376 and the transmissive reflective layer 390 are etched to obtain a plurality of annular grooves 392. Each annular groove 392 penetrates the third heat-insulating layer 376 and the transmissive reflective layer 390, and each annular groove 392 is arranged around the first grid hole 334. Figure 11b shown.

[0127] In step S1250, a reflective material is disposed on the sidewall of the annular groove 392 to form a third reflective layer 396. The third reflective layer 396 is heat-conductive and connected to the reflective layer 332. It should be noted that in this embodiment, the reflective layer 332 may also be referred to as the first reflective layer 332.

[0128] For example, Figure 11c As shown, metal sputtering can be performed on the sidewalls of the annular groove 392 , so that the metal covers the sidewalls of the annular groove 392 and is connected to the underlying metal reflective layer 332 for heat conduction.

[0129] After forming the third light reflecting layer 396, the annular groove 392 is filled with a fence structure material to form a third fence structure 337. The third fence structure 337 has a plurality of third grid holes 335. The plurality of third grid holes 335 correspond to the plurality of first grid holes 334 one by one. Figure 11d shown.

[0130] A second layer of fence structure 338 is formed on the third layer of fence structure 337. Next, a second light reflecting layer 394 is formed on at least the sidewall of the second layer of fence structure 338. The second light reflecting layer 394 and the third light reflecting layer 396 are connected to the light reflecting layer 332 for heat conduction. The second layer of fence structure 338 has a plurality of second grid holes 336. The plurality of second grid holes 336 and the plurality of third grid holes 335 correspond one-to-one with the plurality of first grid holes 334. Figure 11e shown.

[0131] In step S1260, a wavelength conversion layer 380 is formed on the second fence structure 338. For example, a wavelength conversion material layer is patterned in the plurality of second grid holes 336 to form the wavelength conversion layer 380. The wavelength conversion layer 380 is spaced apart from the reflective layer (such as the second reflective layer 394, the third reflective layer 396 and the reflective layer 332). Figure 11f shown.

[0132] Typically, the wavelength conversion layer can be patterned in a size ratio of 1% to 99%. Since the wavelength conversion layer 380 is spaced apart from the LED unit 320 and the reflective layer, the heat generated by the LED unit 320 will be preferentially conducted to the drive panel 310 through the reflective layer 332 with good thermal conductivity and then dissipated.

[0133] In step S1270, a second heat-insulating layer 374 is formed on the wavelength conversion layer 380. The second heat-insulating layer 374 fills the plurality of second grid holes 336 and wraps the wavelength conversion layer 380. The top surface of the second heat-insulating layer 374 is flush with the top surface of the second fence structure 338, so that the surface of the display chip is flattened, and the manufacturing is completed. Figure 6 shown.

[0134] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A Micro LED micro display chip, characterized in that: include: Driver panel; A plurality of LED units are arranged on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; A fence structure having a plurality of grid holes, wherein the plurality of grid holes are respectively arranged around the plurality of LED tables, and recessed areas are formed between the LED tables and the corresponding grid holes; a heat-insulating layer, disposed on the fence structure, the heat-insulating layer comprising a plurality of heat-insulating units, each of the heat-insulating units being filled in a corresponding recessed area; The wavelength conversion layer includes a plurality of wavelength conversion units, each of which is embedded in the corresponding heat insulation unit, and each of the wavelength conversion units is spaced apart from the corresponding LED unit; The heat insulation unit includes a second heat insulation unit, and the Micro LED micro display chip further includes: a transflective layer, wherein the LED unit is disposed on a first side of the transflective layer, the second heat insulation unit is disposed on a side opposite to the first side of the transflective layer, each wavelength conversion unit is embedded in a corresponding second heat insulation unit, and the transflective layer transmits light emitted by the LED unit and reflects light of other colors; The Micro LED micro display chip further includes: a reflective layer, at least provided on the sidewall of the grid hole, the reflective layer being capable of heat conduction, and the wavelength conversion layer being spaced apart from the reflective layer; The thermal conductivity of the light reflecting layer is greater than the thermal conductivity of the heat insulating layer.

2. The Micro LED micro display chip according to claim 1, characterized in that: The heat insulation unit further includes a first heat insulation unit, and the first heat insulation unit is arranged on a first side of the transmissive reflective layer.

3. The Micro LED micro display chip according to claim 2, characterized in that: The heat insulation unit further includes a third heat insulation unit. The third heat insulation unit is disposed on an opposite side of the first side of the transflective layer and is located between the transflective layer and the second heat insulation unit.

4. The Micro LED micro display chip according to claim 3, characterized in that: The fence structure includes a first-layer fence structure, a second-layer fence structure and a third-layer fence structure. The third-layer fence structure is located between the first-layer fence structure and the second-layer fence structure. The first thermal insulation unit is arranged in the grid holes formed by the first-layer fence structure, the second thermal insulation unit is arranged in the grid holes formed by the second-layer fence structure, and the third thermal insulation unit is arranged in the grid holes formed by the third-layer fence structure.

5. The Micro LED micro display chip according to claim 1, characterized in that: The wavelength conversion unit includes a first wavelength conversion unit, which is embedded in the corresponding heat insulation unit. The LED unit emits a first color light, and the first wavelength conversion unit converts the first color light into a second color light.

6. The Micro LED micro display chip according to claim 5, characterized in that: The wavelength conversion unit further includes a second wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a third color light.

7. The Micro LED micro display chip according to claim 6, characterized in that: The wavelength conversion unit further includes a third wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a fourth color light.

8. A method for manufacturing a Micro LED micro display chip, characterized in that: include: Providing a drive panel; A plurality of LED units are formed on the driving panel, each of the LED units having a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; forming a fence structure having a plurality of grid holes, wherein the plurality of grid holes are respectively arranged around the plurality of LED tables, and recessed areas are formed between the LED tables and the corresponding grid holes; forming a heat-insulating layer on the fence structure, wherein the heat-insulating layer has a plurality of heat-insulating units, and each of the heat-insulating units is filled in a corresponding recessed area; forming a wavelength conversion layer, wherein the wavelength conversion layer comprises a plurality of wavelength conversion units, each of the wavelength conversion units being embedded in a corresponding heat insulation unit, and each of the wavelength conversion units being spaced apart from a corresponding LED unit; The forming of the fence structure having a plurality of grid holes comprises: forming a first layer of fence structure having a plurality of first grid holes, wherein the plurality of first grid holes are respectively arranged around the plurality of LED tables, and first recessed areas are formed between the LED tables and the corresponding first grid holes; The method further comprises: forming a transflective layer on the first fence structure, wherein the transflective layer transmits the light emitted by the LED unit and reflects light of other colors; forming a second layer of fence structure having a plurality of second grid holes on the transflective layer; forming a second heat-insulating layer on the second fence structure, wherein the second heat-insulating layer has a plurality of second heat-insulating units, and each second heat-insulating unit is filled in a corresponding second grid hole; The forming of the wavelength conversion layer comprises: forming the wavelength conversion layer in the second heat-insulating layer, wherein each wavelength conversion unit is embedded in a corresponding second heat-insulating unit; Before forming the thermal insulation layer on the fence structure, the method further comprises: forming a reflective layer on the fence structure, the reflective layer being arranged at least on the sidewalls of the grid holes, the reflective layer being capable of heat conduction, and the wavelength conversion layer being spaced apart from the reflective layer; Wherein, the thermal conductivity of the reflective layer is greater than the thermal conductivity of the heat-insulating layer.

9. The method according to claim 8, characterized in that The step of forming a heat insulation layer on the fence structure comprises: A first thermal insulation layer is formed on the first fence structure. The first thermal insulation layer has a plurality of first thermal insulation units. Each of the first thermal insulation units is filled in a corresponding first recessed area.

10. The method according to claim 8, characterized in that The forming of the second heat insulation layer on the second fence structure comprises: forming a first sub-insulation layer on the second fence structure, wherein the first sub-insulation layer is filled in the second grid holes, and a top surface of the first sub-insulation layer is lower than a top surface of the second fence structure; forming a plurality of second recessed areas on the first sub-insulation layer, each of the second recessed areas being located within a corresponding second grid hole; The forming of the wavelength conversion layer comprises: forming the wavelength conversion layer on the first sub-insulation layer, wherein each wavelength conversion unit is filled in the corresponding second recessed area; forming a second sub-insulation layer on the first sub-insulation layer, wherein the second sub-insulation layer covers the wavelength conversion layer, and a top surface of the second sub-insulation layer is flush with a top surface of the second fence structure; The first sub-insulation layer and the second sub-insulation layer form the second insulation layer.

11. The method according to claim 8, characterized in that Before forming a second layer of fence structure having a plurality of second grid holes on the transflective layer, the method further includes: forming a third heat-insulating layer on the transflective layer, wherein the third heat-insulating layer is located between the transflective layer and the second heat-insulating layer; forming a plurality of annular grooves on the third thermal insulation layer, each of the annular grooves passing through the third thermal insulation layer and the transmissive reflective layer, and each of the annular grooves is arranged around the first grid hole; A third fence structure is formed on the first fence structure. The third fence structure is filled in each of the annular grooves. The third fence structure is located between the first fence structure and the second fence structure.

12. The method according to claim 11, characterized in that After forming a third layer of fence structure on the first layer of fence structure, the method further includes: forming the second-layer fence structure on the third-layer fence structure; The second heat insulation layer is formed on the third heat insulation layer.

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