Slow-wave structure unit, slow-wave structure circuit, slow-wave structure array, traveling wave tube, slow-wave structure array formation method and use method

Abstract

The present invention discloses a slow-wave structure unit, a slow-wave structure circuit, a slow-wave structure array, a traveling wave tube, a slow-wave structure array formation method and a use method, comprising an outer conductor and an inner conductor; the outer conductor comprises an inner cavity, an opening provided in two opposite side walls, and a first through hole, the opening and the through hole are connected to the inner cavity; the inner conductor comprises a first structure portion arranged along a first direction, and a second structure portion and a third structure portion formed by extending the first structure portion along a second direction, the second structure portion and the third structure portion are respectively penetrated into the corresponding opening; the inner conductor and the outer conductor are not in contact; a first channel for electromagnetic waves to pass through is included between the inner conductor and the outer conductor; the inner conductor is provided with a second through hole corresponding to the first through hole, the first through hole, the second through hole and the inner cavity between the first through hole and the second through hole form a second channel for electron beams to pass through, and the electromagnetic wave and the electron beam interact with each other at the intersection of the first channel and the second channel.

Description

Technical Field

[0001] The present invention relates to the field of microwave vacuum electronic technology, and more specifically, to a slow-wave structure unit, a slow-wave structure circuit, a slow-wave structure array, a traveling wave tube, a slow-wave structure array formation method and a use method. Background Art

[0002] The traveling wave tube is an important microwave amplifier, which is widely used in electronic systems such as radar, communication, and electronic warfare. Its basic working principle is: the electron gun cathode emits an electron beam, and when interacting with electromagnetic waves, the electron beam converts part of the electron energy into electromagnetic wave energy and outputs a signal, thereby achieving signal amplification. The slow wave structure is the core component of the traveling wave tube, which directly determines the quality of its performance.

[0003] With the rapid development of modern communication technology, the demand for traveling wave tube arraying and miniaturization is increasing. Arraying technology plays a vital role in multiple-input multiple-output (MIMO) systems, and miniaturization can not only reduce the size and weight of devices, but also improve system integration and flexibility, which is especially important in high-density integrated applications. However, the existing slow-wave structure faces significant technical bottlenecks in arraying and miniaturization, which limits the improvement of traveling wave tube performance and its wide application.

[0004] Specifically, the existing slow-wave structures face the following key problems in the process of array miniaturization:

[0005] (1) Limitations of single-channel design

[0006] The existing slow-wave structure is mainly optimized for a single channel, lacking overall consideration of the multi-channel array layout. In the array design, how to efficiently realize the spatial layout of electromagnetic waves and electron beams between multiple channels and ensure the stability and consistency of the performance of each channel is a problem that has not yet been fully solved.

[0007] (2) Over-reliance on magnetic focusing systems

[0008] Many traditional slow-wave structures rely on magnetic focusing systems to control the electron beam, which increases the complexity and manufacturing cost of the system. In array design, over-reliance on magnetic focusing not only makes it difficult to achieve high-density integration of the structure, but also limits the flexibility and compactness of multi-channel array design.

[0009] (3) Manufacturing complexity and scale issues

[0010] Although the existing slow-wave structure performs well in single-channel performance, there is a lack of effective simplified design and large-scale production solutions in the process of arraying and miniaturization. The complex geometry and precision manufacturing process of the existing structure make it face high costs and technical difficulties in large-scale production, thus limiting its commercial application. Summary of the invention

[0011] In view of the above problems, one object of the present invention is to provide a slow-wave structural unit.

[0012] An object of the present invention is to provide a slow-wave structure circuit comprising the above-mentioned slow-wave structure unit.

[0013] An object of the present invention is to provide a slow-wave structure array comprising the above-mentioned slow-wave structure line.

[0014] An object of the present invention is to provide a traveling wave tube including the above-mentioned slow-wave structure array, which can realize the miniaturization of the slow-wave structure array and simplify the layout design between electron injection channels, thereby ensuring that the traveling wave tube works stably in multiple channels.

[0015] An object of the present invention is to provide a method for constructing a slow-wave structure array.

[0016] An object of the present invention is to provide a method for using a slow-wave structure array.

[0017] In order to achieve the above object, the present invention adopts the following technical solutions:

[0018] According to one aspect of the present invention, there is provided a slow-wave structural unit, comprising:

[0019] Outer conductor and inner conductor;

[0020] The outer conductor is a rectangular parallelepiped structure, including an inner cavity for accommodating the inner conductor, openings opened on two opposite side walls of the outer conductor, and a first through hole penetrating the opposite side walls, wherein the opening and the through hole are both connected to the inner cavity;

[0021] The inner conductor comprises a first structure portion arranged along a first direction, and a second structure portion and a third structure portion formed by extending the first structure portion to both sides along a second direction, wherein the second structure portion and the third structure portion are respectively arranged in corresponding openings of the outer conductor;

[0022] The inner conductor and the outer conductor are not in contact with each other, and a first channel for electromagnetic waves to pass through is formed therebetween;

[0023] The inner conductor is provided with a second through hole corresponding to the first through hole, and the first through hole, the second through hole and a part of the inner cavity between the first through hole and the second through hole form a second channel for the electron beam to pass through, and the electromagnetic wave and the electron beam interact with each other at the intersection of the first channel and the second channel.

[0024] In addition, an optional solution is that the end surface of one side of the second structural part facing the corresponding opening is flush with the outer wall surface of the side wall where the opening is located;

[0025] One end surface of the third structure portion facing the corresponding opening is flush with the outer wall surface of the side wall where the opening is located.

[0026] In addition, an optional solution is that the inner conductor is a cross structure, and the second structure portion and the third structure portion are correspondingly located in the middle of the first structure portion and are located at two opposite sides of the first structure portion along the first direction.

[0027] In addition, an optional solution is that the outer conductor is provided with a third through hole penetrating the opposite side wall, and the first through hole and the third through hole are arranged along the first direction and symmetrically arranged with the center line of the two openings as the symmetry axis;

[0028] The inner conductor is provided with a fourth through hole corresponding to the third through hole, and the third through hole, the fourth through hole and a portion of the inner cavity between the third through hole and the fourth through hole form a third channel for the electron beam to pass through, and the electromagnetic wave and the electron beam interact with each other at the intersection of the first channel and the third channel.

[0029] In addition, an optional solution is that there is a gap between the edges of the second structure part and the third structure part and the inner wall surface of the corresponding opening, and the gap is the inlet and outlet of the first channel;

[0030] The first channel includes a first branch channel and a second branch channel, the first branch channel is a partial inner cavity located between the inner conductor and the outer conductor on a side of the inner conductor close to the top wall of the outer conductor, and the second branch channel is a partial inner cavity located between the inner conductor and the outer conductor on a side of the inner conductor close to the bottom wall of the outer conductor;

[0031] The electromagnetic wave enters the first branch channel from the gap between the upper end surface of the second structure part and the opening corresponding to the second structure part, interacts with the electron beam in the second channel located above the opening, and leaves the first branch channel from the gap between the upper end surface of the third structure part and the opening corresponding to the third structure part;

[0032] The electromagnetic wave enters the second branch channel from the gap between the lower end surface of the second structure part and the opening corresponding to the second structure part, interacts with the electron beam in the third channel located below the opening, and leaves the second branch channel from the gap between the lower end surface of the third structure part and the opening corresponding to the third structure part.

[0033] According to one aspect of the present invention, there is provided a slow-wave structure circuit, comprising a plurality of slow-wave structure units, wherein the plurality of slow-wave structure units are sequentially arranged along a second direction.

[0034] According to one aspect of the present invention, there is provided a slow-wave structure array, comprising a plurality of slow-wave structure lines, and a connecting component for connecting the plurality of slow-wave structure lines, wherein each slow-wave structure line is arranged along a first direction and / or a third direction, and the third direction is perpendicular to the first direction and the second direction.

[0035] According to one aspect of the present invention, a traveling wave tube is provided, comprising an electron gun, a concentrated attenuator, an energy coupler, a collector, and a slow-wave structure array.

[0036] According to one aspect of the present invention, a method for forming a slow-wave structure array is provided, the method comprising: extending the slow-wave structure line by m periods along a first direction and / or by n periods along a third direction according to the design, to complete the formation of the slow-wave structure array;

[0037] Wherein, the third direction is perpendicular to the first direction and the second direction.

[0038] According to one aspect of the present invention, a method for using a slow-wave structure is provided, the method comprising: applying a first voltage U to the outer conductor of each slow-wave structure line 1 , connect the inner conductors of each slow-wave structure line in parallel and apply a second voltage U 2 , where U 1 ≠U 2 .

[0039] The beneficial effects of the present invention are as follows:

[0040] In response to the problems existing in the prior art, the present invention provides a slow-wave structure unit, a slow-wave structure circuit, a slow-wave structure array, a traveling wave tube, a slow-wave structure array construction method and a use method, which effectively solves multiple key problems in the existing traveling wave tube technology through innovative design.

[0041] The present invention realizes effective focusing of electron beams through the design of a new slow-wave structural unit, completely getting rid of the dependence on the magnetic focusing system. This innovation not only simplifies the structural design and reduces the manufacturing difficulty, but also effectively reduces the production cost, thus providing a practical technical solution for the miniaturization, arraying and integration of traveling wave tubes.

[0042] The slow-wave structure array of the present invention can ensure the consistency of injection wave synchronization in the channel and improve the output power through power synthesis technology. The array can achieve efficient and stable power amplification in multiple channels, fully meeting the application requirements of miniaturization and arraying.

[0043] By rationally optimizing the positional relationship within and between each electron beam channel, the present invention significantly reduces mutual interference between electron beams and effectively avoids transmission deviation of electron beams, thereby enabling multiple electron beams to work stably in parallel. In addition, the array design can stably transmit large currents at low voltages, greatly reducing current capture.

[0044] Compared with traditional technologies, the slow-wave structure array of the present invention has obvious advantages in manufacturing feasibility. By simplifying the channel layout, the dependence on complex manufacturing processes is reduced, thereby greatly reducing production costs and technical difficulties. This makes the invention show broad prospects in commercial applications, especially in the fields of communications, radar and electronic warfare. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The specific implementation modes of the present invention are further described in detail below in conjunction with the accompanying drawings.

[0046] Figure 1 A side cross-sectional view showing a slow-wave structural unit provided by an embodiment of the present invention when it is a single electron injection channel.

[0047] Figure 2 A schematic structural diagram of a slow-wave structural unit provided in an embodiment of the present invention is shown.

[0048] Figure 3 A side cross-sectional view of an outer conductor provided by an embodiment of the present invention is shown.

[0049] Figure 4 A schematic structural diagram of an inner conductor provided by an embodiment of the present invention is shown.

[0050] Figure 5 A side cross-sectional view showing a slow-wave structural unit provided by an embodiment of the present invention when the slow-wave structural unit is a dual electron injection channel.

[0051] Figure 6 A front cross-sectional view showing a slow-wave structural unit provided by an embodiment of the present invention as a dual electron injection channel.

[0052] Figure 7 A schematic structural diagram of a slow-wave structure array provided in an embodiment of the present invention is shown.

[0053] Figure 8 A schematic structural diagram of a coaxial radial line slow-wave structure circuit in the prior art is shown.

[0054] Fig. 9 Shows the electric field distribution diagram of the coaxial radial line slow-wave structure circuit.

[0055] Fig.10 The electric field distribution diagram of two adjacent coaxial radial line slow-wave structure lines is shown.

[0056] Fig.11 The electric field distribution diagram of the slow-wave structure circuit provided by the embodiment of the present invention is shown.

[0057] Fig.12 The electric field distribution diagram when the slow-wave structure lines provided by the embodiment of the present invention are arranged adjacent to each other is shown.

[0058] Fig.13 A cross-sectional diagram showing electron beam transmission in a coaxial radial line slow-wave structure.

[0059] Fig.14 A cross-sectional diagram showing electron beam transmission in two adjacent coaxial radial line slow-wave structure lines.

[0060] Fig.15 A cross-sectional view showing electron beam transmission in a slow-wave structure circuit provided by an embodiment of the present invention.

[0061] Fig.16 A cross-sectional view showing electron beam transmission in two slow-wave structure circuits provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0062] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0063] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] In the present invention, unless otherwise clearly stipulated and limited, a first feature being “on” or “under” a second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but being in contact through another feature between them.

[0065] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operate in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0066] In view of the defects of the prior art, the present invention provides a slow-wave structural unit. Figure 1-6 As shown, the slow-wave structural unit includes an outer conductor 1 and an inner conductor 2, and both the outer conductor 1 and the inner conductor 2 are metal conductors.

[0067] The outer conductor 1 is a rectangular parallelepiped structure, including an inner cavity 13 accommodating the inner conductor, openings 11 opened on two opposite side walls of the outer conductor 1, and a first through hole 12 penetrating the two side walls with the openings 11. The openings 11 and the first through holes 12 are both connected to the inner cavity.

[0068] The inner conductor 2 includes a first structure portion 21 extending along a first direction, and a second structure portion 22 and a third structure portion 23 formed by the first structure portion 21 extending to both sides along a second direction. The second structure portion 22 and the third structure portion 23 are respectively arranged in the openings 11 close to them. It can be understood that the first direction in this embodiment is Figure 2 The Z-axis direction in the second direction is Figure 2 The X-axis direction.

[0069] The edges of the inner conductor 2 and the outer conductor 1 are not in contact, which is equivalent to the inner conductor 2 being suspended in the inner cavity 13. The inner conductor 2 and the outer conductor 1 are insulated, and there is a potential difference between the two, which can form an electric field. The electric field varies due to the shape and relative distance of the inner conductor 2 and the outer conductor 1.

[0070] The inner cavity portion between the inner conductor 2 and the outer conductor 1 is a first channel 31 for electromagnetic waves to pass through.

[0071] The inner conductor 2 is provided with a second through hole 24 corresponding to the first through hole 12. The first through hole 12, the second through hole 24 and the part of the inner cavity between the first through hole 12 and the second through hole 24 form a second channel 32 for the electron beam to pass through. The electron beam is subjected to the electric field force formed by the inner conductor 2 and the outer conductor 1 to maintain one or more thin and high-speed electron streams in the second channel 32. The propagation speed of the electromagnetic wave is reduced by the shape of the first channel 31. The electron beam is accelerated or decelerated by the electric field force to a speed close to the phase speed of the electromagnetic wave. The two are at the intersection of the first channel 31 and the second channel 32 (i.e. Figure 5 The four positions C, D, E, and F in the figure interact with each other, exchange energy, and achieve signal amplification.

[0072] In one embodiment, the end surface of the second structure portion 22 facing the corresponding opening 11 is flush with the outer wall surface of the side wall where the opening 11 is located. The end surface of the third structure portion 23 facing the corresponding opening 11 is flush with the outer wall surface of the side wall where the opening 11 is located.

[0073] In a specific embodiment, the slow wave structural unit is a double electron injection channel structure, such as Figure 4 As shown, the inner conductor 2 is a cross structure, the second structure portion 22 and the third structure portion 23 are correspondingly located in the middle of the first structure portion 21, and the two are located at two opposite sides of the first structure portion 21 along the first direction, and are symmetrically arranged.

[0074] In this embodiment, Figure 3 as well as Figure 5 As shown, the outer conductor 1 is further provided with a third through hole 14 penetrating two opposite side walls with the opening 11. The first through hole 12 and the third through hole 14 are arranged along the first direction and symmetrically arranged with the center line of the two openings 11 as the symmetry axis.

[0075] Correspondingly, the inner conductor 2 is provided with a fourth through hole 25 corresponding to the third through hole 14. The third through hole 14, the fourth through hole 25 and a portion of the inner cavity between the third through hole 14 and the fourth through hole 25 form a third channel 33 for the electron beam to pass through. The electromagnetic wave and the electron beam interact with each other at the intersection of the first channel 31 and the third channel 33, thereby forming a slow-wave structure with dual electron beam channels.

[0076] In another embodiment, the slow-wave structure is a single electron channel structure, such as Figure 1 As shown, the inner conductor is in a convex structure, the second structure portion 22 and the third structure portion 23 are located at the bottom of the first structure portion 21, and the two are located at two opposite sides of the first structure portion 21 along the first direction and are symmetrically arranged.

[0077] In this embodiment, the outer conductor 1 is provided with a first through hole 12, and the first through hole 12 is located above the opening 11. Correspondingly, the inner conductor 2 is provided with a second through hole 24, and the second through hole 24 is provided in the first structural portion 21, and is provided corresponding to the first through hole 12. The first through hole 12, the second through hole 24, and a part of the inner cavity between the first through hole 12 and the second through hole 24 form a second channel 32 for the electron beam to pass through.

[0078] In a specific embodiment, there is a gap between the edges of the second structure portion 22 and the third structure portion 23 and the inner wall surfaces of the corresponding opening 11. The gap not only avoids contact between the inner conductor 2 and the outer conductor 1 and ensures the insulation state between the inner conductor 2 and the outer conductor 1, but also serves as the entrance and exit of the first channel 31 for electromagnetic waves to enter and leave the first channel 31.

[0079] Specifically, when the slow-wave structural unit is a dual electron injection channel structure, the first channel 31 includes a first branch channel 311 and a second branch channel 312. The first branch channel 311 is a partial inner cavity located between the inner conductor 2 and the outer conductor 1 on the side of the inner conductor 2 close to the top wall of the outer conductor 1. The electromagnetic wave enters the first branch channel 311 from the gap between the upper end surface of the second structural portion 22 and the opening 11A corresponding to the second structural portion 22, and interacts with the electron beam in the second channel 32 located above the opening 11 at C and D, and leaves the first branch channel 311 from the gap between the upper end surface of the third structural portion 23 and the opening 11B corresponding to the third structural portion 23.

[0080] The second branch channel 312 is a partial inner cavity located between the inner conductor 2 and the outer conductor 1 on the side of the bottom wall of the inner conductor 2 close to the outer conductor 1. The electromagnetic wave enters the second branch channel 312 from the gap between the lower end surface of the second structure part 22 and the opening 11A corresponding to the second structure part 22, and interacts with the electron beam in the third channel 33 located below the opening 11 at E and F, and leaves the second branch channel 312 from the gap between the lower end surface of the third structure part 23 and the opening 11B corresponding to the third structure part 23.

[0081] When the slow-wave structure is a single electron injection channel structure, only one first channel 31 is provided for electromagnetic waves to pass through. The electromagnetic wave enters the first branch channel 311 from the gap between the upper end surface of the second structural portion 22 and the opening 11A corresponding to the second structural portion 22, and interacts with the electron beam in the second channel 32 located above the opening 11 at C and D, and leaves the first channel 31 from the gap between the upper end surface of the third structural portion 23 and the opening 11B corresponding to the third structural portion 23.

[0082] In a specific embodiment, the inner conductor 2 is fixed to the inner cavity by the support block 4, so that the inner conductor 2 is suspended in the inner cavity and the insulation between the inner conductor 2 and the outer conductor 1 is ensured. The support block 4 is made of insulating material, preferably ceramic. Figure 6 As shown, the support block 4 can be fixed to the two surfaces of the inner conductor 2 parallel to the XZ plane, connecting the inner conductor 2 and the inner wall surface of the outer conductor 1. Figure 1 As shown, when the slow-wave structural unit is a single electron injection channel structure, the support block 4 is also arranged between the bottom of the inner conductor 2 and the bottom wall of the opening 11 to support the inner conductor 2 and prevent the inner conductor 2 from contacting the outer conductor 1 .

[0083] In one embodiment, the width d of the second structure portion 22 and the third structure portion 23 in the first direction is 1 Equal to the width d of the first structure portion 21 in the first direction 2The distances a between the edges of the second structure portion 22 and the third structure portion 23 and the inner wall surfaces of the corresponding openings 11 are equal.

[0084] Another embodiment of the present invention provides a slow-wave structure circuit, which includes a plurality of slow-wave structure units 100 provided in the above-mentioned embodiments. Specifically, a plurality of slow-wave structure units 100 are arranged in sequence along the X direction (the direction in which the electron beam travels) to form a slow-wave structure circuit. Specifically, in the slow-wave structure circuit, the outer conductor of each slow-wave structure unit 100 can be a whole, and similarly, the inner conductor can also be a whole, that is, the inner conductor of the slow-wave structure circuit includes a plurality of first structure parts arranged along the direction in which the electron beam travels, and a second structure part and a third structure part located at both ends, and the two ends of the inner conductor are fixed in the outer conductor by support blocks 4 to avoid the effect of the beam-wave interaction being affected by too many support blocks 4.

[0085] Another embodiment of the present invention provides a slow-wave structure array, such as Figure 7 As shown, the slow-wave structure array includes a plurality of slow-wave structure circuits, and a connecting component (not shown) for connecting the plurality of slow-wave structure circuits. The individual slow-wave structure circuits are arranged along a first direction and / or a third direction according to requirements to form a slow-wave structure array. Specifically, the slow-wave structure circuit is a dual electron beam channel structure, and the outer conductors 1 of the plurality of slow-wave structure units 100 in the same slow-wave structure circuit are a whole, and at the same time, the inner conductor 2 of the slow-wave structure unit 100 in the slow-wave structure circuit is also a whole, and the voltages applied to the outer conductor 1 and the inner conductor 2 are different, and there is a potential difference between the two, so as to form an electric field between the outer conductor 1 and the inner conductor 2 to focus the electron beam.

[0086] In a preferred example, the slow-wave structure line constitutes a 3*4 slow-wave structure array, and the slow-wave structure array is simulated based on the three-dimensional electrical simulation software CST Particle Studio. The inner conductor voltage is 4kV, the outer conductor grounding voltage is 0kV, the electron injection voltage is 14kV, the electron injection current is 50mA, and the total current of each electron injection channel of the slow-wave structure array is as high as 600mA. The simulation results show that without applying an external magnetic field to focus, the electron beam can achieve non-interception transmission. This shows that the slow-wave structure array provided in the embodiment of the present invention forms a multi-electron injection channel slow-wave structure array through the arraying of the slow-wave structure line, which can meet the low-voltage and high-current transmission requirements.

[0087] Another embodiment of the present invention provides a traveling wave tube, which includes an electron gun, a concentrated attenuator, an energy coupler, a collector, and the slow-wave structure array provided in the above embodiment.

[0088] In another embodiment of the present invention, a method for constructing a slow-wave structure array is provided, the method comprising: expanding the slow-wave structure unit 100 by m periods along the first direction and / or by n periods along the third direction according to the design, to complete the construction of the slow-wave structure array. The values ​​of m and n may be equal or unequal, and the present invention does not impose any limitation on this. For the slow-wave structure array, each slow-wave structure line shares the same outer conductor, and the slow-wave structure units within each slow-wave structure line share an inner conductor. It can be regarded that the slow-wave structure array includes an outer conductor located on the outside, and a plurality of inner conductors corresponding to each slow-wave structure line.

[0089] Another embodiment of the present invention provides a method for using a slow-wave structure array, the method comprising: applying a first voltage U to an outer conductor of the slow-wave structure array 1 , connect the inner conductors of the corresponding slow-wave structure lines in parallel, and apply a second voltage U 2 , where U 1 ≠U 2 Alternatively, in another embodiment, a voltage U may be applied to the inner conductor of each slow-wave structure line. 21 , U 22 , U 23 ...U 2n , where U 1 Not equal to U 21 , U 22 , U 23 ...U 2n .

[0090] The common slow-wave structure circuit is generally a coaxial radial line slow-wave structure circuit as shown in 8. This type of slow-wave structure circuit includes multiple electron injection channels, such as Figure 8 The slow-wave structure circuit shown in FIG. has eight electron injection channels. The electric field distribution of the slow-wave structure circuit is shown in FIG. Fig. 9 As shown by Fig. 9 It can be seen that the electric field intensity distribution of the eight electron injection channels shows obvious unevenness, which is specifically manifested as follows: the two electron injection channels 51 and 52 located at the upper and lower positions are located in the strong field area, the two electron injection channels 53 and 54 located at the left and right positions are located in the weak field area, and the remaining four electron injection channels are between the strong field area and the weak field area. This asymmetric electric field distribution leads to different injection wave interaction effects in each channel, resulting in large differences in injection wave synchronization in each channel, making the overall multi-injection synchronization very difficult, thereby affecting the efficiency of power synthesis. In particular, when multiple electron injection channels act together, it is difficult to achieve ideal power superposition, thereby reducing the overall efficiency.

[0091] The slow-wave structure array provided in the embodiment of the present invention is composed of multiple slow-wave structure lines arrayed together to achieve the effect of multiple electron injection channels to meet the multi-channel requirements of the application scenario. In the slow-wave structure array, each slow-wave structure line works independently and has little influence on each other. The slow-wave structure line provided in this embodiment is a dual electron injection channel structure, and its electric field distribution is as follows: Fig.11 As shown in the figure, the electric field distribution of two adjacent slow-wave structure lines in the slow-wave structure array is as follows: Fig.12 As shown. Fig.11 It can be seen that the electric field distribution of the slow-wave structure circuit provided by the embodiment of the present invention is more uniform and regular, and the electric field distribution at the two electron injection channels (the second channel 32 and the third channel 33) is almost completely consistent, and the two electron injection channels are both located in the strong field area of ​​the electromagnetic field. This design ensures that during the injection wave interaction process, the electric field amplitude and phase in the two electron injection channels are consistent, thereby ensuring the consistent injection wave interaction effect in each electron injection channel, ensuring good synchronization and power synthesis effect. By comparison Fig.10 and Fig.12 It can be seen that each slow-wave structure circuit works independently and has little influence on each other's electric field distribution. Each electron injection channel of the slow-wave structure array is in a strong field area. Compared with the existing multi-electron injection slow-wave structure, the slow-wave structure circuits in the slow-wave structure array provided in this embodiment can work independently without affecting each other, and the electron injection channels of each slow-wave structure circuit can work synergistically to achieve the effect of multiple electron injection channels, thereby optimizing the power synthesis effect of the slow-wave structure array and improving the overall performance of the slow-wave structure.

[0092] In the existing coaxial radial line slow-wave structure circuit, the repulsive force between the electron beams in each channel is very large, which may interfere with the focusing effect of the electron beam, causing the transmission path of the electron beam to shift; it may also destroy the original symmetry of the electron beam energy distribution and affect the performance of the device. In order to solve this problem and ensure the stability of the electron beam, it is necessary to introduce complex electric or magnetic field control, but this will not only increase the complexity of the slow-wave structure design, but also put forward higher requirements for the stability of the slow-wave structure, especially under high current density, which may make it difficult for the system to maintain long-term stable operation.

[0093] In order to ensure the stability of the electron beam, it is concluded through comparative analysis that the problem of large repulsive force between electron beams in each channel is caused by the close distance between each electron beam channel, which enhances the space charge effect and electrostatic repulsion. The slow-wave structure circuits provided by the present invention are all dual electron beam channels, and the electron beams can be transmitted independently without interfering with each other. The distance between the two electron beam channels of the slow-wave structure circuit is far, and the coupling effect is weak, which can reduce the mutual interference between the electron beams and avoid phase mismatch during high-frequency operation. The electron beam channels of the slow-wave structure array formed by the arraying of multiple slow-wave structure circuits are arranged regularly, the coupling effect is low, and the repulsive force between the electron beams in each channel is small, which can avoid the problem of electron beam transmission deviation. In addition, the slow-wave structure circuit can also maintain a good working state under continuous wave conditions, simplifying the difficulty of the electric field focusing and regulating the electron beam, and reducing the difficulty of slow-wave structure design and engineering implementation.

[0094] Fig.13 A cross-sectional diagram showing electron beam transmission in a coaxial radial line slow-wave structure. Fig.14 A cross-sectional diagram showing electron beam transmission when two coaxial radial line slow-wave structure lines are arranged side by side. Fig.15 A cross-sectional view showing electron beam transmission in a slow-wave structure circuit provided in an embodiment of the present invention is shown. Fig.16 The cross-sectional view of the electron beam transmission of the slow-wave structure circuit provided by this embodiment is shown. Fig.13 and Fig.15 It can be seen that the transmission of the electron beam in the slow-wave structure circuit provided by the embodiment of the present invention has no deviation, and the electron beam energy distribution in the channel is uniform. The transmission of the electron beam in each electron beam channel in the coaxial radial line slow-wave structure circuit is offset, and the electron beam energy distribution is uneven. Fig.14 and Fig.16 It can be seen that when the coaxial radial line slow-wave structure lines are arranged in an array, the electron beams are difficult to synchronize, the electron beams influence each other, and the electron beam transmission deviation is large. The slow-wave structure array provided in this embodiment has little mutual influence between the slow-wave structure lines, and the multiple electron beam channels of the slow-wave structure array are formed by the array arrangement of multiple slow-wave structure lines. The distance between each electron beam channel is far, and the repulsive force between the electron beams in each channel is small, which can avoid the problem of electron beam transmission deviation.

[0095] In the prior art, the coaxial radial line slow-wave structure circuit uses multiple electron injection channels to work in parallel, aiming to improve the total power and current density. It is generally used in scenarios such as high-power radar and electronic countermeasures, and can provide high-power output, but it also has some obvious limitations. For example, multiple electron injection channels are angularly distributed, with complex layout, high difficulty in production, and high cost; and because multiple electron injection channels work in parallel, the power consumption is high; in addition, the slow-wave structure circuit design usually focuses on high-power output, and requires water cooling and other heat dissipation conditions to deal with heat dissipation problems, which is difficult to adapt to the needs of miniaturized or compact equipment.

[0096] Compared with the existing coaxial radial line slow-wave structure circuit, the slow-wave structure circuit provided by the embodiment of the present invention is more focused on the requirements of process simplification and miniaturization design. Specifically, through modular layout, each slow-wave structure circuit is arrayed and combined as needed to obtain a slow-wave structure array, which can be flexibly combined and expanded. Each slow-wave structure circuit can be configured according to different power and frequency requirements to meet a variety of application scenarios.

[0097] The existing coaxial radial line slow-wave structure circuit has multiple electron injection channels, and multiple electron injections are difficult to synchronize, the synthesized waveform is difficult to use, and the electron injections affect each other, making it difficult to meet the use requirements. The slow-wave structure array provided by the embodiment of the present invention achieves the effect of multiple electron injection channels through array design of slow-wave structure circuits. Each slow-wave structure circuit works independently, which can reduce the mutual influence between each electron injection, improve the total power and current density of the slow-wave structure array, meet the needs of high-power and miniaturized applications, and improve the reliability of the slow-wave structure array.

[0098] The outer conductor is designed as a rectangular structure. Through planar design, it is not only easy to array, but also simplifies the layout of the electron injection channel, reduces the manufacturing difficulty and cost, and is suitable for mass production. In addition, it can also optimize the slow-wave structure array layout and reduce the array volume. It is particularly suitable for space-constrained applications (such as mobile communication systems, miniature radars, etc.), is easier to integrate, and improves the feasibility of miniaturized applications.

[0099] From the perspective of the difficulty of processing, the existing coaxial radial line slow-wave structure circuit needs to accurately center each electron injection channel and maintain the concentricity of the conductor, which has extremely high requirements on the manufacturing process, increases the complexity and cost of processing, and is not suitable for mass production. The slow-wave structure circuit provided by the embodiment of the present invention adopts an outer conductor with a rectangular structure, supports an array layout, and a dual electron channel design facilitates the centering of the electron injection channel. Compared with the coaxial radial line slow-wave structure circuit, the manufacturing process is simpler and convenient for large-scale manufacturing.

[0100] The slow-wave structure circuit provided in the embodiment of the present invention is a dual electron injection channel, with only two electron injection heat sources and two radio frequency channels, and the overall heat concentration is low. In addition, the slow-wave structure circuit adopts an all-metal design, the metal material has a high thermal conductivity, and the outer conductor is a rectangular structure, which can quickly diffuse heat, has high heat transfer efficiency, a large heat dissipation area, and can effectively disperse heat. The setting of the positions of the two electron injection channels can help reduce the accumulation of local heat, so that the overall heat dissipation pressure is lower, and the outer surface of the slow-wave structure circuit is flat, with good heat dissipation, which can ensure the long-term stable operation of the slow-wave structure circuit.

[0101] However, in the coaxial radial line slow-wave structure circuit in the prior art, due to the presence of multiple electron beam channels, the interaction between each electron beam and the slow-wave field will generate a large amount of heat. The number of heat sources is large and the distribution is dense, and the heat concentration is high. Although the heat can also be diffused to the outer shell through the outer conductor, since multiple heat sources are distributed in the radial direction of the coaxial line, the heat between adjacent heat sources will be superimposed on each other, causing local overheating. The generated heat needs to be radially conducted from the center conductor to the outer shell. The heat dissipation capacity of the center conductor is limited by geometric constraints, and the heat transfer efficiency is low. Therefore, the prior art generally introduces a water cooling system or a forced convection heat dissipation system to dissipate heat, but this will increase the complexity of device design and also put forward higher requirements on the reliability of the heat dissipation system.

[0102] The slow-wave structure unit, slow-wave structure line, slow-wave structure array, traveling wave tube, slow-wave structure formation method and use method provided by the embodiments of the present invention, by designing a new type of slow-wave structure unit, enable itself to realize focusing of the electron beam, without the need for an external magnetic focusing system, fundamentally avoiding the use of the magnetic focusing system, simplifying the slow-wave structure array architecture method, and facilitating the miniaturization and array integration of the traveling wave tube. The structural design of the outer conductor and the inner conductor enables the slow-wave structure to realize low-voltage and high-current transmission, can realize effective focusing of the electron beam, and reduce the intercepted current. The slow-wave structure array formed by the arraying of the slow-wave structure line can realize the effect of multiple electron beam channels, meet the requirements of array and miniaturization design, and at the same time avoid mutual interference between electron beams, avoid electron beam transmission deviation, ensure the synchronization and power synthesis effect in each channel, and improve the working stability of the slow-wave structure array.

[0103] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not limitations on the implementation methods of the present invention. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is impossible to list all the implementation methods here. All obvious changes or modifications derived from the technical solution of the present invention are still within the protection scope of the present invention.

Claims

1. A slow-wave structural unit, characterized in that: include: Outer conductor and inner conductor; The outer conductor is a rectangular parallelepiped structure, including an inner cavity for accommodating the inner conductor, openings opened on two opposite side walls of the outer conductor, and a first through hole penetrating the opposite side walls, wherein the opening and the through hole are both connected to the inner cavity; The inner conductor comprises a first structure portion arranged along a first direction, and a second structure portion and a third structure portion formed by extending the first structure portion to both sides along a second direction, wherein the second structure portion and the third structure portion are respectively arranged in corresponding openings of the outer conductor; The inner conductor and the outer conductor are not in contact with each other, and a first channel for electromagnetic waves to pass through is formed therebetween; The inner conductor is provided with a second through hole corresponding to the first through hole, and the first through hole, the second through hole and a part of the inner cavity between the first through hole and the second through hole form a second channel for the electron beam to pass through, and the electromagnetic wave and the electron beam interact with each other at the intersection of the first channel and the second channel.

2. The slow-wave structural unit according to claim 1, characterized in that: The end surface of the second structural part facing the corresponding opening is flush with the outer wall surface of the side wall where the opening is located; One end surface of the third structure portion facing the corresponding opening is flush with the outer wall surface of the side wall where the opening is located.

3. The slow-wave structural unit according to claim 1, characterized in that: The inner conductor is a cross structure, and the second structure portion and the third structure portion are correspondingly located in the middle of the first structure portion and are located at two opposite sides of the first structure portion along the first direction.

4. The slow-wave structural unit according to claim 3, characterized in that: The outer conductor is provided with a third through hole penetrating the opposite side wall, the first through hole and the third through hole are arranged along the first direction and symmetrically arranged with the center line of the two openings as the symmetry axis; The inner conductor is provided with a fourth through hole corresponding to the third through hole, and the third through hole, the fourth through hole and a portion of the inner cavity between the third through hole and the fourth through hole form a third channel for the electron beam to pass through, and the electromagnetic wave and the electron beam interact with each other at the intersection of the first channel and the third channel.

5. The slow-wave structural unit according to claim 4, characterized in that: There is a gap between the edges of the second structure part and the third structure part and the inner wall surface of the corresponding opening, and the gap is the inlet and outlet of the first channel; The first channel includes a first branch channel and a second branch channel, the first branch channel is a partial inner cavity located between the inner conductor and the outer conductor on a side of the inner conductor close to the top wall of the outer conductor, and the second branch channel is a partial inner cavity located between the inner conductor and the outer conductor on a side of the inner conductor close to the bottom wall of the outer conductor; The electromagnetic wave enters the first branch channel from the gap between the upper end surface of the second structure part and the opening corresponding to the second structure part, interacts with the electron beam in the second channel located above the opening, and leaves the first branch channel from the gap between the upper end surface of the third structure part and the opening corresponding to the third structure part; The electromagnetic wave enters the second branch channel from the gap between the lower end surface of the second structure part and the opening corresponding to the second structure part, interacts with the electron beam in the third channel located below the opening, and leaves the second branch channel from the gap between the lower end surface of the third structure part and the opening corresponding to the third structure part.

6. A slow-wave structure line, characterized in that: It comprises a plurality of slow-wave structural units as described in any one of claims 1 to 5, wherein the plurality of slow-wave structural units are arranged in sequence along the second direction.

7. A slow-wave structure array, characterized in that: It comprises the slow-wave structure circuit as claimed in claim 6, wherein each slow-wave structure circuit is arranged along a first direction and / or a third direction, and the third direction is perpendicular to the first direction and the second direction.

8. A traveling wave tube, characterized in that: It comprises an electron gun, a concentrated attenuator, an energy coupler, a collector and the slow-wave structure array as claimed in claim 7.

9. A method for forming a slow-wave structure array, characterized in that: The method comprises: according to the design, extending the slow-wave structure line as claimed in claim 6 by m periods along the first direction and / or by n periods along the third direction to complete the formation of the slow-wave structure array; Wherein, the third direction is perpendicular to the first direction and the second direction.

10. A method for using the slow-wave structure array according to claim 7, characterized in that: The method comprises: applying a first voltage U1 to the outer conductors of each slow-wave structure line, connecting the inner conductors of each slow-wave structure line in parallel and applying a second voltage U2, wherein U1≠U2.

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