A reconfigurable metasurface reflective array based on MOS switch chip control and its implementation method

Abstract

The present invention discloses a reconfigurable metasurface reflective array based on MOS switch chip control and an implementation method thereof. The metasurface reflective array of the present invention includes a feed horn and a reconfigurable metasurface reflective array; the reconfigurable metasurface reflective array includes a plurality of periodically arranged metasurface reflective array units; the metasurface reflective array unit includes a top metal structure layer, a first dielectric substrate, a metal ground, a metal power supply layer, a second dielectric substrate and a bottom metal feed layer in sequence; the top metal structure is loaded with a MOS switch chip. The present invention controls the on-off of the MOS switch chip to realize two states of 0° and 180° phase of the metasurface reflective array unit, and controls the state of each metasurface reflective array unit in the reflective array through FPGA, so that beam scanning can be performed at ±45°. Compared with the reflective array using a PIN tube as a tuning element, the design of a complex feed network is avoided, and the advantages of fast beam scanning speed and low power consumption are achieved.

Description

Technical Field

[0001] The present invention belongs to the technical field of wireless communications, and in particular relates to a reconfigurable metasurface reflective array based on MOS switch chip control and a method for realizing the same. Background Art

[0002] The advancement of wireless communication technology has put forward higher requirements on the performance of communication hardware. In this context, metasurfaces, as an innovative structure that can regulate the propagation state of electromagnetic waves, have received widespread attention and research. In the exploration of metasurface beam steering technology, reconfigurable metasurfaces have emerged, which can change according to different application requirements. By integrating lumped elements in each metasurface reflective array unit, these units can be adjusted and programmed in real time. Programmable reflective and transmissive metasurfaces are two representative types of programmable metasurfaces. Reflective metasurfaces usually have lower losses and simpler design advantages than transmissive metasurfaces. In specific design and application practices, 1-bit reflective programmable metasurfaces have been widely used in many fields such as beam scanning, generating vortex electromagnetic waves with orbital angular momentum, and reducing radar cross section (RCS).

[0003] However, the control elements in the current reconfigurable metasurface generally use foreign commercial PIN current drive devices, which have the disadvantages of high power consumption, low speed, and complex feeding network. In order to overcome the above problems, reconfigurable reflective arrays with low power consumption and fast beam scanning speed have become a research hotspot in recent years. The present invention realizes a reflective programmable metasurface based on a high-performance MOS switch chip developed based on a low-cost silicon-based process. Since the switching time of the MOS switch chip is in the nanosecond level, the reconfigurable metasurface reflective array designed based on the MOS switch chip can achieve fast beam scanning. Compared with the metasurface reflective array using PIN tubes as control elements, the use of MOS switch chips for control can avoid complex feeding network design and achieve zero power consumption. Summary of the invention

[0004] The purpose of the present invention is to provide a reconfigurable metasurface reflective array based on MOS switch chip control and its implementation method to solve the above-mentioned problems.

[0005] In order to achieve the above object, the present invention adopts the following technical solution:

[0006] In a first aspect, the present invention provides a reconfigurable metasurface reflective array based on MOS switch chip control, comprising a feed horn and a reconfigurable metasurface reflective array; the reconfigurable metasurface reflective array comprises a plurality of periodically arranged metasurface reflective array units.

[0007] The metasurface reflective array unit comprises, from top to bottom, a top metal structure layer, a first dielectric substrate layer, a metal ground layer, a metal power supply layer, a second dielectric substrate layer and a bottom metal feed layer.

[0008] The top metal structure includes a first radiation patch, a second radiation patch, a third radiation patch, and a fourth radiation patch.

[0009] A notch is dug inside the first radiation patch; the second radiation patch, the third radiation patch, and the fourth radiation patch are located inside the notch; and the third radiation patch and the fourth radiation patch are located on both sides of the second radiation patch.

[0010] The notch of the first radiation patch and a group of parallel sides of the second radiation patch are each provided with at least one connecting metal patch; the connecting metal patch is loaded with a MOS switch chip.

[0011] Preferably, the first radiation patch is hexagonal, and the notch is hexagonal; the side of the first radiation patch is arranged parallel to the side of the notch.

[0012] Preferably, the second radiation patch is rectangular.

[0013] Preferably, the third radiation patch and the fourth radiation patch have the same structure, more preferably a C-shaped structure, with an opening facing the second radiation patch.

[0014] Preferably, the third radiation patch and the fourth radiation patch are arranged axially symmetrically with respect to the second radiation patch.

[0015] Preferably, the third radiation patch and the fourth radiation patch are located on both sides of the side of the second radiation patch where the connecting metal patch is located.

[0016] Preferably, a connecting metal patch is provided on a side of the notch of the first radiation patch, and at least one connecting metal patch is provided on a side of the second radiation patch.

[0017] Preferably, the second radiation patch is connected to the metal ground through a first blind hole; and the third radiation patch is connected to the metal power supply layer through a second blind hole.

[0018] Preferably, the fourth radiation patch is connected to the bottom metal feed layer through a through hole, so as to control the on and off of the MOS switch chip.

[0019] Preferably, the metasurface reflective array unit controls the on and off of the MOS switch chip to achieve a phase difference of 180° in two states of the 1-bit metasurface reflective array unit.

[0020] Preferably, the reconfigurable metasurface reflective array is composed of 12×12 metasurface reflective array units to achieve corresponding beam scanning, and the maximum beam scanning range is [-45°, +45°].

[0021] Preferably, the feed horn is located directly above the reconfigurable metasurface reflective array, and an air layer exists between the feed horn and the reconfigurable metasurface reflective array. Preferably, the wide mouth of the feed horn faces the reconfigurable metasurface reflective array.

[0022] More preferably, the feed horn is 10 working wavelengths away from the reflective array.

[0023] Preferably, the first dielectric substrate and the second dielectric substrate are made of high-frequency circuit board materials.

[0024] In a second aspect, the present invention provides a control method for a reconfigurable metasurface reflective array, comprising:

[0025] Since the electromagnetic waves radiated by the feed horn are spherical waves, when different metasurface reflective array units receive electromagnetic waves, due to the differences in propagation paths, the electromagnetic waves received by each metasurface reflective array unit have different spatial phase delays.

[0026] By controlling the on and off of the MOS switch chip in each metasurface reflective array unit, the phase compensation of each metasurface reflective array unit is completed. Specifically:

[0027] The core device of the MOS switch chip is a three-port voltage-controlled MOSFET, which includes a silicon substrate, a gate, a source, a drain and an insulating layer therebetween; its working principle is to change the conductive channel state between the source and the drain by controlling the voltage of the gate, thereby realizing the switching function of the circuit.

[0028] When a high-level voltage is applied to the gate of the MOS switch chip, the electric field in the insulating layer below the gate attracts electrons in the silicon substrate, thereby forming a conductive channel on the semiconductor surface below the gate; this conductive channel allows current to flow from the source to the drain, so that the MOS switch chip is in a conducting state; at this time, the first radiation patch and the second radiation patch are connected through the MOS switch chip, and the first radiation patch is connected to the metal ground;

[0029] When a low-level voltage is applied to the gate of the MOS switch chip, the electrons and holes in the silicon substrate are evenly distributed, and there is no conductive channel. At this time, the MOS switch chip is in a cut-off state, and no current flows between the source and the drain, and it is in a turned-off state; at this time, the first radiation patch is separated from the second radiation patch;

[0030] Preferably, the phase difference of the metasurface reflective array unit in two states is achieved by controlling the on and off of the MOS switch chip to meet 180°.

[0031] The beneficial effects of the present invention include at least the following:

[0032] 1) The present invention uses a MOS switch chip as a tuning element, which has three ports, the gate as a control port, the source and drain as RF ports, and the RF and control ports are separated. This feature makes it unnecessary to use fan-shaped branches for AC and DC isolation in the metasurface reflector array design, as when using a two-port PIN tube, thereby effectively avoiding the complex feed network design. The simplified feed network not only reduces the design difficulty and cost, but also improves the overall stability and reliability of the system.

[0033] 2) When the MOS switch chip used in the present invention works in the cut-off region, there is almost no current when it is turned on, which makes the metasurface reflective array work with close to zero power consumption. In modern wireless communication systems, low power consumption is a crucial indicator, especially for energy-constrained devices or large-scale deployed arrays. This feature of the present invention can significantly reduce energy consumption, extend the working time of the device, reduce heat dissipation problems, and further improve the long-term stability of the system.

[0034] 3) The switching time of the MOS switch chip used in the present invention is in the nanosecond level, and the reconfigurable metasurface reflector array designed based on this can achieve fast beam scanning. In high-speed communication scenarios, the fast beam scanning capability can track moving targets more timely, adapt to dynamically changing communication environments, improve the response speed and efficiency of the communication system, and enhance the adaptability and flexibility of the system.

[0035] 4) By controlling the on-off of the MOS switch chip, the metasurface reflective array unit can achieve a phase difference of 180° in two states. Combined with the reasonably designed metasurface reflective array unit structure and the precise phase compensation method, the reconfigurable metasurface reflective array can achieve precise beam scanning, and the maximum beam scanning range reaches [-45°, +45°]. At the same time, the main lobe gain of the beam is high (all greater than 17dBi, the maximum main lobe gain is 19.3dBi) and the main lobe gain is more than 10dBi greater than the side lobe gain, with good beam directivity, effectively reducing side lobe interference, and improving communication quality and efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is a schematic structural diagram of the metasurface reflective array unit of the present invention.

[0037] Figure 2 for Figure 1 Top view of the .

[0038] Figure 3 for Figure 1 Bottom view of .

[0039] Figure 4 This is the layout of the MOS switch chip.

[0040] Figure 5 This is the curve of the reflection amplitude changing with frequency when the MOS switch chip is turned on and off.

[0041] Figure 6 This is the curve of the reflection phase of the metasurface reflectarray unit changing with frequency when the MOS switch chip is on and off.

[0042] Figure 7 It is a schematic diagram of the structure of the reconfigurable metasurface reflective array of the present invention.

[0043] Figure 8 The aperture phase distribution diagram of the reconfigurable metasurface reflector array at different radiation angles, where (a) is 0°, (b) is 15°, (c) is 30°, and (d) is 45°.

[0044] Fig. 9 The far-field patterns of the reconfigurable metasurface reflective array of the present invention are simulated at different scanning angles.

[0045] Markings in the figure: 1. Top metal structure layer; 11. First radiation patch; 12. Second radiation patch; 13. Third radiation patch; 14. Fourth radiation patch; 15. Connecting metal patch; 151. First small patch; 152. Second small patch; 153. Third small patch; 154. Fourth small patch; 2. First dielectric substrate; 3. Metal ground; 4. Metal power supply layer; 5. Second dielectric substrate; 6. Bottom metal feed layer; 7. First blind hole; 8. Second blind hole; 9. Through hole. DETAILED DESCRIPTION

[0046] In order to further explain the technical solution disclosed in the present invention, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.

[0047] In the field of reconfigurable metasurface reflective arrays, traditional designs mostly use PIN diodes as tuning elements. Taking the more common MADP-000907-14020 PIN diode as an example, its working principle relies on the control of DC bias voltage to achieve state switching. However, this design method has exposed many serious defects in practical applications.

[0048] First, from the perspective of the feed network, the metasurface reflector array unit using PIN diodes needs to construct a complex feed network structure. This is because in order to achieve effective isolation of RF signals, an additional bias line with a fan-shaped choke structure must be designed. Its essence is to connect the diode to the ground through an inductor to prevent the RF signal from interfering with the bias circuit. This complex feed network design not only increases the physical complexity of the system, but also increases the manufacturing cost to a certain extent, and poses higher challenges to the overall stability and reliability of the system.

[0049] Secondly, in terms of power consumption, when performing beam scanning operations, since all PIN diodes are in parallel in the circuit, the current flowing through each diode is accumulated together. In larger-scale reconfigurable metasurface arrays, this current accumulation effect leads to a significant increase in the overall power consumption of the system, making it difficult to meet the strict requirements of modern communication systems for low power consumption. This not only increases energy consumption, but may also cause a series of related problems such as heat dissipation, which in turn affects the long-term stability and performance of the system.

[0050] In order to solve the above problems, Figure 7 As shown, this embodiment provides a reconfigurable metasurface reflective array based on MOS switch chip control, which is composed of a feed horn and a reconfigurable metasurface reflective array, and there is an air layer between the feed horn and the reconfigurable metasurface reflective array. The wide mouth of the feed horn faces the reconfigurable metasurface reflective array. This layout method helps to optimize the transmission and reception effects of electromagnetic waves.

[0051] The reconfigurable metasurface reflective array is composed of metasurface reflective array units distributed in a 12×12 matrix. This specific number and arrangement of units have been carefully designed to achieve accurate and effective beam scanning functions. Its maximum beam scanning range is [-45°, +45°], and it has broad application potential in actual communication scenarios.

[0052] like Figure 1 As shown, the metasurface reflective array unit comprises, from top to bottom, a top metal structure layer 1, a first dielectric substrate 2, a metal ground 3, a metal power supply layer 4, a second dielectric substrate 5 and a bottom metal feed layer 6.

[0053] like Figure 2 As shown, the top metal structure 1 faces the wide mouth of the feed horn, and includes a first radiation patch 11, a second radiation patch 12, a third radiation patch 13, and a fourth radiation patch 14;

[0054] For example, the first radiation patch 11 is hexagonal, with a hexagonal notch inside, and its side is arranged parallel to the side of the notch. This unique geometric shape design helps to optimize the radiation and scattering characteristics of electromagnetic waves. The second radiation patch 12 is rectangular and is located inside the notch of the first radiation patch 11. It works together with the first radiation patch 11 to regulate the phase of the electromagnetic wave. The third radiation patch 13 and the fourth radiation patch 14 have the same structure, both of which are C-shaped structures with openings facing the second radiation patch 12. The two are axially symmetrically distributed about the second radiation patch 12 and are also located inside the notch of the first radiation patch 11. They play an important auxiliary role in the electromagnetic wave regulation process.

[0055] At least one connecting metal patch 15 is respectively provided on both sides of the notch of the first radiation patch 11 and a group of parallel edges of the second radiation patch 12;

[0056] For example, a connecting metal patch 15 is provided on the side of the notch of the first radiation patch 11, which is recorded as a first small patch 151, and three connecting metal patches 15 are provided on the side of the second radiation patch 12, which are recorded as a second small patch 152, a third small patch 153, and a fourth small patch 154 from one side to the other end, and there is a gap between the second small patch 152, the third small patch 153, and the fourth small patch 154; the connecting metal patch 15 is loaded with a MOS switch chip;

[0057] In one implementation manner, the heights of the second small patch 152 , the third small patch 153 , and the fourth small patch 154 are smaller than the distances between the third radiation patch 13 , the fourth radiation patch 14 and the second radiation patch 12 .

[0058] In one implementation manner, the first small patch 151 , the second small patch 152 , the third small patch 153 , and the fourth small patch 154 are located between the third radiation patch 13 and the fourth radiation patch 14 .

[0059] For example, the third radiation patch 13 and the fourth radiation patch 14 are located on both sides of the side of the second radiation patch 12 where the connecting metal patch 15 is located;

[0060] The second radiation patch 12 is connected to the metal ground 3 through the first blind hole 7 to achieve electrical connection. This connection method provides a stable grounding path for the transmission and regulation of electromagnetic waves inside the metasurface reflective array unit. The third radiation patch 13 is connected to the metal power supply layer 4 through the second blind hole 8, thereby ensuring that a stable power supply can be provided to the relevant components when needed. The fourth radiation patch 14 is connected to the bottom metal feed layer 6 through the through hole 9. The key role of this connection is to realize the on-off control of the MOS switch chip, thereby accurately regulating the working state of the metasurface reflective array unit.

[0061] Specifically, the MOS switch chip is connected between the first radiation patch 11 and the second radiation patch 12. The first small patch 151 on the first radiation patch 11 and the three second small patches 152, the third small patch 153, and the fourth small patch 154 on the second radiation patch 12 are used to bond the top metal structure to the MOS switch chip through gold wires. The first small patch 151 and the third small patch 153 are respectively connected to the drain and the source of the MOS switch chip. In addition, the second small patch 152 and the fourth small patch 154 are both bonded to the GND end of the MOS switch chip, so that the GND end of the MOS switch chip is connected to the metal ground 3 of the metasurface reflection array unit; the third radiation patch 13 is connected to the VDD end of the MOS switch chip, so that the VDD end of the MOS switch chip is connected to the metal power supply layer 4 of the metasurface reflection array unit; the fourth radiation patch 14 is connected to the VG end, i.e., the gate, of the MOS switch chip, and the MOS switch chip is turned on and off by controlling the voltage at the VG end.

[0062] like Figure 4 As shown, the MOS switch chip is designed based on the SMIC 55nm CMOS process. The core device is a three-port voltage-controlled MOSFET, which is mainly composed of a silicon substrate, a gate, a source, a drain and an insulating layer between them (usually using silicon dioxide as an insulating material). This structural design makes the MOS switch chip have unique electrical properties. The VG terminal is connected to the gate of the MOSFET. By applying different voltage signals to the VG terminal, the on-off state of the MOS switch chip can be accurately controlled. When a high level is applied to the VG terminal (for example, 1.2V in this embodiment), the electric field in the insulating layer under the gate will attract electrons in the silicon substrate, thereby forming a conductive channel on the semiconductor surface under the gate. The conductive channel allows current to flow from the source to the drain. At this time, the MOS switch chip is in the on state; when a low level (such as 0V) is applied to the VG terminal, the electrons and holes in the silicon substrate are evenly distributed, there is no conductive channel, no current flows between the source and the drain, and the MOS switch chip is in the off state. The S and D terminals are connected to the source and drain of the MOSFET respectively for transmitting RF signals; the VDD terminal supplies power to the MOS switch chip to ensure its normal operation; the GND terminal is the ground PAD of the MOS switch chip, providing a stable ground reference potential for the entire chip.

[0063] Specifically, the first layer of dielectric substrate 2 is made of Taconic TLX-8 material, which has a dielectric constant of 2.55 and a thickness of 0.51mm. The selection of this material is based on its good electrical performance in high-frequency circuits, which can effectively reduce the loss of electromagnetic waves during transmission and provide a stable support foundation for the top metal structure. The second layer of dielectric substrate 5 is made of FR4 material, with a dielectric constant of 4.3 and a thickness of 0.4mm. FR4 material is widely used in multi-layer circuit board design because of its low cost and certain electrical performance advantages. Here, it works with the first layer of dielectric substrate to jointly optimize the overall performance of the metasurface reflection array unit. The metal ground 3 and the metal power supply layer 4 are pressed together with two layers of semi-cured sheets. The semi-cured sheets are made of Rogers RO4450F sheets with a dielectric constant of 3.7 and a thickness of 0.2mm. The selection of this semi-cured sheet material helps to control the thickness and electrical performance of the entire structure while ensuring the stability of the electrical connection between the metal layers, ensuring that the transmission and interaction of electromagnetic waves between the layers can be carried out efficiently.

[0064] like Figure 3 As shown, the bottom metal feeding layer 6 is a square patch with a side length of 3 mm, which is connected to an external FPGA controller and is used to control the on and off of the MOS switch chip. This design not only provides a reliable control signal transmission path for the MOS switch chip, but also, compared with the traditional metasurface reflective array unit that uses a PIN tube as a tuning element, there is no need to design a fan-shaped choke structure, which simplifies the design of the feeding network and improves the overall reliability and maintainability of the system.

[0065] In summary, the reconfigurable metasurface reflective array realizes beam scanning by controlling the state of each metasurface reflective array unit in the reflective array through FPGA. The metasurface reflective array unit realizes that the phase difference of 1bit metasurface reflective array unit in two states meets 180° by controlling the on and off of MOS switch chip. The use of MOS switch chip as a tuning element has the following advantages: its switching time is less than 1ns, which can realize fast beam scanning; there is no need to design a fan-shaped choke structure separately, avoiding a complex feeding network; MOS switch chip is driven by low voltage, and the on-current is less than 10uA, which is close to zero power consumption.

[0066] This embodiment also provides a control method for the above-mentioned reconfigurable metasurface reflective array, including:

[0067] When a high-level voltage (e.g., 1.2V) is applied to the gate of the MOS switch chip, the electric field in the insulating layer below the gate attracts electrons in the silicon substrate, thereby forming a conductive channel on the semiconductor surface below the gate; this conductive channel allows current to flow from the source to the drain, so that the MOS switch chip is in a conducting state; at this time, the first radiation patch 11 and the second radiation patch 12 are conducted through the MOS switch chip, and the first radiation patch 11 is connected to the metal ground 3;

[0068] When a low-level voltage (e.g., 0V) is applied to the gate of the MOS switch chip, the electrons and holes in the silicon substrate are evenly distributed, and there is no conductive channel. At this time, the MOS switch chip is in a cut-off state, and no current flows between the source and the drain, and it is in a turned-off state; at this time, the first radiation patch 11 is separated from the second radiation patch 12;

[0069] By controlling the voltage switching on the gate of the MOS switch chip, the phase difference of the metasurface reflective array unit can be 180° at a frequency of 12.48GHz, and the reflection amplitude is greater than -2.9dB, meeting the requirements of 1-bit phase control. This phase control effect is achieved based on the synergy between the components inside the metasurface reflective array unit and the propagation characteristics of electromagnetic waves in it.

[0070] like Figure 5 and Figure 6 As shown in the figure, the simulation results show that when the MOS switch chip is in the on and off states, the phase difference of the metasurface reflective array unit can be 180° at a frequency of 12.48GHz, and the reflection amplitude is greater than -2.9dB, which meets the requirements of 1-bit phase control.

[0071] like Figure 7 As shown, a reconfigurable metasurface reflective array based on MOS switch chip control of the present invention is composed of 12×12 metasurface reflective array units, each unit is 12 mm in size (approximately 0.5λ); the feed horn is located at a distance of 10 working wavelengths from the metasurface reflective array; the bottom metal feeding layer 6 is connected to the FPGA through a pin header as a feeding network, and each metasurface reflective array unit in the reflective array is independently controlled by the FPGA, thereby realizing beam scanning.

[0072] Since the electromagnetic waves radiated by the feed horn are spherical waves, this results in different metasurface reflective array units receiving electromagnetic waves with different spatial phase delays due to differences in propagation paths. At the same time, the phase radiated by the feed horn is not constant, and there are certain phase differences. Therefore, in order to achieve plane wave radiation, the structure and arrangement of the metasurface reflective array unit must be cleverly designed to effectively compensate for the total phase delay of the electromagnetic waves radiated from the feed horn to each metasurface reflective array unit.

[0073] Assume that the main beam of the reflected wave points to ( , ), then the phase shift of each metasurface reflective array unit can be expressed as:

[0074] (1)

[0075] in is the coordinate of the i-th metasurface reflective array unit, is the propagation constant of electromagnetic waves in a vacuum.

[0076] Assume that the position from the phase center of the feed horn to the i-th metasurface reflector array unit is When the feed horn illuminates the reflection front of the reconfigurable metasurface reflection array, an initial phase shift will occur. , which can be expressed as:

[0077] (2)

[0078] Therefore, the compensation phase that each metasurface reflector unit needs to provide on the reflector is It can be expressed as:

[0079] (3)

[0080] Since a 1-bit metasurface reflective array unit has only two phase states, 0° and 180°, the phase needs to be quantified.

[0081] (4)

[0082] Each metasurface reflective array unit in the reconfigurable metasurface reflective array is quantified by formula (4), and the on-off of the MOS switch chip in each metasurface reflective array unit is controlled to achieve the required phase compensation, and finally achieve the effect of beamforming at different angles. Figure 8 Middle (a), Figure 8 Middle (b), Figure 8 (c) and Figure 8 As shown in (d), metasurface reflector arrays with different phase distributions can achieve different beam scanning, where the dark part is the 0° phase state and the light part is the 180° phase state.

[0083] Fig. 9 The far-field patterns of different scanning angles for the reconfigurable metasurface reflector array are simulated, showing the simulation results of beam scanning at 0°, 15°, 30°, and 45°. Fig. 9As shown in the figure, the main lobe gain of the beam is greater than 17dBi, the maximum main lobe gain is 19.3dBi, and the main lobe gain at different scanning angles is 10dBi greater than the side lobe gain, which means that the beam has good directivity, can effectively reduce sidelobe interference, and improve the transmission efficiency and reliability of the communication system. Due to the symmetry of beamforming, the metasurface reflector array designed in the present invention can perform beam scanning within the range of ±45°, and has good beam directivity, covering a wider angle range, further expanding its application scenarios in the field of wireless communications.

[0084] In summary, the reconfigurable metasurface reflector array based on MOS switch chip control proposed in the present invention has successfully overcome many problems existing in the prior art and achieved a number of significant advantages by carefully designing the metasurface reflector array unit structure. In terms of beam scanning range, it reaches ±45°, which can meet the beam pointing requirements in a variety of complex communication scenarios. In terms of cost, the MOS switch chip is developed using a low-cost silicon-based process, and the overall cost is effectively reduced by simplifying the feed network design and other methods, thereby improving the market competitiveness of the product. In terms of beam scanning speed, thanks to the nanosecond switching time of the MOS switch chip, fast beam scanning can be achieved to meet the requirements of high-speed communication systems. In terms of feed network design, there is no need for a complex fan-shaped choke structure, which greatly simplifies the design process and improves the stability and reliability of the system. In addition, the MOS switch chip is driven at low voltage and has a very small on-current (less than 10uA), achieving an operating state close to zero power consumption, which is of great significance for energy-constrained communication equipment and systems.

[0085] The above content has shown the embodiments of the present invention in detail. However, it should be pointed out that the present invention is not limited to the specific details in these embodiments. Under the premise of following the technical concept of the present invention, the technical scheme of the present invention can be subjected to a variety of equivalent transformations, and all these equivalent transformations are also included in the protection scope of the present invention.

Claims

1. A reconfigurable metasurface reflective array based on MOS switch chip control, comprising a feed horn and a reconfigurable metasurface reflective array; the reconfigurable metasurface reflective array comprises a plurality of periodically arranged metasurface reflective array units; It is characterized in that The metasurface reflective array unit comprises, from top to bottom, a top metal structure layer (1), a first dielectric substrate layer (2), a metal ground (3), a metal power supply layer (4), a second dielectric substrate layer (5) and a bottom metal feed layer (6); The top metal structure layer (1) comprises a first radiation patch (11), a second radiation patch (12), a third radiation patch (13), and a fourth radiation patch (14); A notch is dug inside the first radiation patch (11); the second radiation patch (12), the third radiation patch (13), and the fourth radiation patch (14) are located inside the notch; the third radiation patch (13) and the fourth radiation patch (14) are located on both sides of the second radiation patch (12); The notch of the first radiation patch (11) and a group of parallel sides of the second radiation patch (12) are each provided with at least one connecting metal patch (15); the connecting metal patch (15) is loaded with a MOS switch chip; The first radiation patch (11) is hexagonal; the notch is hexagonal; the side edge of the first radiation patch (11) is arranged parallel to the side edge of the notch; The third radiation patch (13) and the fourth radiation patch (14) are arranged axially symmetrically with respect to the second radiation patch (12); The third radiation patch (13) and the fourth radiation patch (14) are C-shaped structures, and their openings face toward the second radiation patch (12).

2. According to claim 1, a reconfigurable metasurface reflective array based on MOS switch chip control is characterized in that: The third radiation patch (13) and the fourth radiation patch (14) are located on both sides of the side of the second radiation patch (12) where the connecting metal patch (15) is located.

3. According to claim 1, a reconfigurable metasurface reflector array based on MOS switch chip control is characterized in that: A connecting metal patch (15) is provided on the side edge of the notch of the first radiation patch (11), and at least one connecting metal patch (15) is provided on the side edge of the second radiation patch (12).

4. According to claim 1, a reconfigurable metasurface reflector array based on MOS switch chip control is characterized in that: The second radiation patch (12) is connected to the metal ground (3) via a first blind hole (7); the third radiation patch (13) is connected to the metal power supply layer (4) via a second blind hole (8); and the fourth radiation patch (14) is connected to the bottom metal feed layer (6) via a through hole (9), and is used to control the on and off of the MOS switch chip.

5. According to claim 1, a reconfigurable metasurface reflective array based on MOS switch chip control is characterized in that: The feed horn is located directly above the reconfigurable metasurface reflection array, and an air layer exists between the feed horn and the reconfigurable metasurface reflection array.

6. A control method for the reconfigurable metasurface reflective array according to any one of claims 1 to 5, characterized in that The method is: Since the electromagnetic waves radiated by the feed horn are spherical waves, when different metasurface reflective array units receive electromagnetic waves, due to the difference in propagation paths, the electromagnetic waves received by each metasurface reflective array unit have different spatial phase delays; By controlling the on and off of the MOS switch chip in each metasurface reflective array unit, the phase compensation of each metasurface reflective array unit is completed. Specifically: When a high-level voltage is applied to the gate of the MOS switch chip, a conductive channel is formed in the MOS switch chip, so that current flows from the source to the drain. At this time, the MOS switch chip is in a conducting state; therefore, the first radiation patch (11) and the second radiation patch (12) are conducted through the MOS switch chip, and the first radiation patch (11) is connected to the metal ground (3); When a low-level voltage is applied to the gate of the MOS switch chip, no conductive channel exists in the MOS switch chip. At this time, the MOS switch chip is in a cut-off state, and no current flows between the source and the drain; therefore, the first radiation patch (11) is separated from the second radiation patch (12).

7. The method according to claim 6, characterized in that: When the MOS switch chip is in the on and off state, the phase difference of the metasurface reflective array unit satisfies 180°.

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