Dual-linear-polarization independently-controlled low-profile reflective array antenna with gain filtering characteristic

Abstract

The invention discloses a dual-linear polarization independent control low-profile reflective array antenna with a gain filtering characteristic. The antenna comprises a plane reflection array formed by a plurality of reflection units, and a horn antenna. The reflection unit comprises a magnetoelectric dipole loaded with a split ring resonator, an x polarization feed part and a y polarization feed part, each feed part comprises an independent feed arm and an open-circuit metal microstrip line patch, and the feed arm and the open-circuit metal microstrip line patch are connected through a metalized via hole; energy received by the magnetoelectric dipole in a working band can be coupled to the feed arm, transmitted to the open-circuit metal microstrip line patch from the feed arm through the metalized via hole, and reflected on the open-circuit metal microstrip line patch, so that the reflection phase can be changed by adjusting the length of the open-circuit metal microstrip line patch. A radiation zero point is introduced at a low frequency by utilizing the characteristics of the magnetoelectric dipole, and a radiation zero point is introduced at a high frequency by utilizing the half-wavelength resonance characteristics of the split ring resonator, so that the filtering characteristic is realized.

Description

Technical Field

[0001] The invention belongs to the technical field of microwaves and antennas, and relates to a low-profile reflective array antenna with dual-polarization independent control and gain filtering characteristics. Background Art

[0002] In the 5G era, there are requirements for the miniaturization of communication systems. In traditional RF communication systems, filters and antennas are two indispensable parts. However, in the traditional design process, the designs of antennas and filters are often independent of each other. After the antenna and filter are designed, they are cascaded to achieve the corresponding functions. However, these two parts need to occupy a certain volume in the RF communication system, and additional losses will be introduced through cascading. In order to solve this problem, a design method that integrates antennas and filters is proposed, namely, filtering antennas. The filtering characteristics are integrated into the antenna, which can greatly reduce the volume of the system while reducing losses.

[0003] However, most of the existing filtering antennas work in the form of single antennas. In the 5G era, a large amount of data needs to be transmitted over long distances. Long-distance transmission requires the antenna to provide higher gain, but it is difficult for a single antenna structure to achieve higher gain. Therefore, some work introduces filtering characteristics into phased array antennas. Although introducing filtering performance into phased array antennas can achieve higher gain, phased array antennas require complex feeding structures, and the feeding structure will introduce additional losses. Reflectarray antennas use a spatial feeding structure. Introducing filtering functions into reflectarray antennas can avoid complex feeding structures and the loss problems caused by complex feeding structures, while achieving higher gain and meeting the needs of long-distance data transmission.

[0004] However, the reflectarray antennas that have currently introduced filtering functions only work in single-polarization mode. Compared with single-polarization antennas, reflectarray antennas with independent dual-polarization have stronger data transmission capabilities and can better meet the needs of the 5G era. Therefore, how to introduce filtering functions into reflectarray antennas that can achieve independent control of dual-polarization is a key issue. Summary of the invention

[0005] The object of the present invention is to provide a low-profile reflective array antenna with dual-polarization independent control and gain filtering characteristics in view of the above-mentioned deficiencies in the prior art.

[0006] The technical solution of the present invention to solve the above technical problems is: A low-profile reflective array antenna with dual-polarization independent control and gain filtering characteristics, the main body of which includes: A planar reflective array as a reflective surface; A horn antenna as a feed source, which is located directly above the planar reflection array and can rotate around a central axis; the central axis is perpendicular to the planar reflection array; The x-polarization working state and the y-polarization working state of the antenna are realized by rotating the horn antenna 0° and 90° relative to the planar reflection array.

[0007] The planar reflection array includes a plurality of periodically distributed reflection units, each of which is, from top to bottom, a first metal layer, a first dielectric layer, a first adhesive layer, a second metal layer, a second dielectric layer, a third metal layer, a third adhesive layer, a third dielectric layer and a fourth metal layer.

[0008] The second metal layer includes four metal open ring patches, a first strip metal patch, a second strip metal patch and a third strip metal patch; wherein the four metal open ring patches are arranged in a centrally symmetrical manner, and there are gaps between adjacent metal open ring patches; the first strip metal patch is located in the gap of the four top metal open ring patches parallel to the width direction of the first dielectric layer, the second strip metal patch and the third strip metal patch are located in the gap of the four top metal open ring patches parallel to the length direction of the first dielectric layer, and are respectively located on both sides of the first strip metal patch, and are both at a distance from the first strip metal patch.

[0009] Two ends of the first metal layer are connected to the second strip metal patch and the third strip metal patch of the second metal layer through two first metalized vias; the first metalized vias penetrate the first dielectric layer and the first adhesive layer.

[0010] The four metal open ring patches are respectively connected to the third metal layer through four second metallized vias penetrating the second dielectric layer.

[0011] A magneto-electric dipole is formed by four metal open ring patches, a second metalized via hole, and a third metal layer.

[0012] The third metal layer has a first hole and a second hole formed therein.

[0013] The first strip-shaped metal patch is connected to the fourth metal layer through a fourth metallized via; the fourth metallized via passes through the second dielectric layer, the second hole of the third metal layer, the third adhesive layer, and the third dielectric layer; the size of the second hole is larger than the diameter of the fourth metallized via, so that the fourth metallized via is not in contact with the third metal layer.

[0014] The second strip metal patch is connected to the fourth metal layer through a fifth metallized via; the fifth metallized via passes through the second dielectric layer, the first hole of the third metal layer, the third adhesive layer, and the third dielectric layer; the size of the first hole is larger than the diameter of the fifth metallized via, so that the fifth metallized via does not contact the third metal layer.

[0015] The fourth metal layer includes a first open metal microstrip line patch and a second open metal microstrip line patch.

[0016] The first metal layer, the second strip metal patch and the third strip metal patch are connected through the first metallized via hole to form the y-polarized feeding arm of the magnetoelectric dipole, the first strip metal patch is the x-polarized feeding arm of the magnetoelectric dipole, the x-polarized feeding arm is connected to the first open-circuit metal microstrip line patch through the fifth metallized via hole, the y-polarized feeding arm is connected to the second open-circuit metal microstrip line patch through the fourth metallized via hole, the reflection phase of the x-polarization is adjusted by adjusting the length of the first open-circuit metal microstrip line patch, and the reflection phase of the y-polarization is adjusted by adjusting the length of the second open-circuit metal microstrip line patch, thereby realizing independent control of dual-line polarization.

[0017] Preferably, the first metal layer is a rectangular metal patch, the length and width of which are much smaller than those of the first dielectric layer.

[0018] Preferably, the first strip-shaped metal patch, the second strip-shaped metal patch and the third strip-shaped metal patch are not in contact with the four metal open ring patches.

[0019] Preferably, the openings of the metal open ring patches are all arranged to face outwards.

[0020] Preferably, the first open-circuit metal microstrip line patch includes a first metal microstrip line, a second metal microstrip line, and a third metal microstrip line; the first metal microstrip line mainly adjusts the reflection phase by adjusting the length, the second metal microstrip line is connected to the first metal microstrip line and also plays a role of impedance matching, and the third metal microstrip line is used to connect to the fifth metalized via.

[0021] Preferably, each top-layer metal open ring patch adopts a square open ring, the opening of the square open ring is located at the top corner, and the opening of the square open ring is bent inward, and a rectangular metal patch is provided in the inner space of the square open ring opposite to the opening; two adjacent sides of the rectangular metal patch are connected to the square open ring, and the other two adjacent sides face the inner space of the square open ring.

[0022] Preferably, the open ring openings of the four top-layer metal open ring patches are respectively located at four diagonal positions of the first dielectric layer, and are spaced apart from the edges of the first dielectric layer and the second dielectric layer.

[0023] Preferably, there is a gap between the planar reflection array and the horn antenna.

[0024] Preferably, the wide mouth of the horn antenna faces the planar reflection array.

[0025] Preferably, the shape of the planar reflective array is quasi-circular; and the shape of the reflective unit is square.

[0026] Preferably, the first open-circuit metal microstrip line patches of all the reflective units in the planar reflective array are completely the same, or different, or not completely the same.

[0027] Preferably, the second open-circuit metal microstrip line patches of all the reflective units in the planar reflective array are completely the same, or different, or not completely the same.

[0028] The present invention proposes a dual-polarization independently controlled low-profile reflectarray antenna with gain filtering characteristics. The proposed reflectarray antenna is based on a magnetoelectric dipole antenna loaded with a split ring resonator. The cross-sectional thickness corresponds to the center frequency of the antenna operation of 0.072λ. The x-polarization and y-polarization beams point to the ±25° direction respectively. In the x working state, the maximum gain of 21.77dBi can be achieved, and the corresponding aperture efficiency is 35.1%, the 3dB gain bandwidth is 19.3%, and the selectivity is 0.5. In the y working state, the maximum gain of 21.93dBi can be achieved, and the corresponding aperture efficiency is 36.4%, the 3dB gain bandwidth is 18.5%, and the selectivity is 0.52. The present invention can introduce filtering performance into the dual-polarization independently controllable reflectarray antenna, and better meet the requirements for the volume of radio frequency communications and the amount of data transmitted in the 5G era. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solution of the present invention, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 It is a side view of the reflective unit structure of the dual-polarization independently controlled low-profile reflective array antenna with gain filtering characteristics of the present invention.

[0031] Figure 2 It is an exploded diagram of the reflective unit structure of the dual-polarization independently controlled low-profile reflective array antenna with gain filtering characteristics of the present invention.

[0032] Figure 3 It is a schematic structural diagram of the first dielectric layer and the first metal layer in the reflection unit of the dual-linear polarization independently controlled low-profile reflection array antenna with gain filtering characteristics of the present invention.

[0033] Figure 4 Figure (a) is a schematic diagram of the structure of the second dielectric layer, the second metal layer and the third metal layer in the reflection unit of the dual-polarization independently controlled low-profile reflection array antenna with gain filtering characteristics of the present invention.

[0034] Figure 4 Figure (b) is Figure 4 Dimension marking diagram corresponding to Figure (a).

[0035] Figure 5 It is a schematic diagram of the structure of the third metal layer in the reflection unit of the low-profile reflection array antenna with dual-linear polarization independent control and gain filtering characteristics of the present invention.

[0036] Figure 6 Figure (a) is a schematic diagram of the structure of the third dielectric layer and the fourth metal layer in the reflection unit of the low-profile reflection array antenna with independent control of dual linear polarization and gain filtering characteristics of the present invention.

[0037] Figure 6 Figure (b) is Figure 6 Dimension marking diagram corresponding to Figure (a).

[0038] Figure 7 Figure (a) is a reflection amplitude and reflection phase curve of eight x-polarized 3-bit units proposed by the dual-polarized independently controlled low-profile reflection array antenna with gain filtering characteristics of the present invention under the incidence of x-polarized electromagnetic waves.

[0039] Figure 7 Figure (b) is a graph of reflection amplitude and reflection phase of eight y-polarized 3-bit units proposed by the dual-polarized independently controlled low-profile reflective array antenna with gain filtering characteristics of the present invention under the incidence of y-polarized electromagnetic waves.

[0040] Figure 8 Figure (a) is a graph of the reflection amplitude and reflection phase of a unit with an x-polarization reflection phase of -90° proposed by the dual-polarization independently controlled low-profile reflection array antenna with gain filtering characteristics of the present invention under the incidence of x-polarized electromagnetic waves when the y-polarization reflection phase is -90°, 0° and 90° respectively.

[0041] Figure 8 Figure (b) is a graph of the reflection amplitude and reflection phase of a unit with a y-polarization reflection phase of -90° proposed by the dual-polarization independently controlled low-profile reflection array antenna with gain filtering characteristics of the present invention under the incidence of y-polarization electromagnetic waves when the x-polarization reflection phase is -90°, 0° and 90° respectively.

[0042] Fig. 9 Figure (a) is a schematic diagram of the overall array of the low-profile reflective array antenna with dual-polarization independent control and gain filtering characteristics of the present invention, with the feed horn rotated 0°.

[0043] Fig. 9 Figure (b) is a schematic diagram of the overall array of the low-profile reflective array antenna with dual-polarization independent control and gain filtering characteristics of the present invention, with the feed horn rotated 90 degrees.

[0044] Fig.10 Schematic diagram of the structure of the horn antenna used in the present invention; (a) is a bottom view, (b) is a side view, and (c) is a front view.

[0045] Fig.11 Figure (a) is the E-plane normalized radiation pattern of the low-profile reflectarray antenna with independent control of dual-linear polarization and gain filtering characteristics of the present invention under the x-polarization working state at 9.5GHz.

[0046] Fig.11 Figure (b) is the H-plane normalized radiation pattern of the low-profile reflectarray antenna with independent control of dual-linear polarization and gain filtering characteristics of the present invention under the x-polarization working state at 9.5GHz.

[0047] Fig.12 Figure (a) is the E-plane normalized radiation pattern of the low-profile reflectarray antenna with independent control of dual linear polarization and gain filtering characteristics of the present invention in the y-polarization working state at 9.5GHz.

[0048] Fig.12 Figure (b) is the H-plane normalized radiation pattern of the low-profile reflectarray antenna with independent control of dual-linear polarization and gain filtering characteristics of the present invention under the y-polarization working state at 9.5GHz.

[0049] Fig.13This is a diagram of the simulated gain and aperture efficiency results of the dual-polarization independently controlled low-profile reflective array antenna with gain filtering characteristics under different polarization working states of the present invention. Markings in the figure: 1, first metal layer; 101, rectangular metal patch; 2, second metal layer; 21, metal open ring patch; 211, square open ring; 212, rectangular metal patch; 22, first strip metal patch; 23, second strip metal patch; 24, third strip metal patch; 3, third metal layer; 31, first digging hole; 32, second digging hole; 4, fourth metal layer; 41, first open metal microstrip line patch; 411, first metal microstrip line patch; 412, second metal microstrip line; 413, a third metal microstrip line; 42, a second open metal microstrip line patch; 421, a fourth metal microstrip line; 422, a fifth metal microstrip line; 423, a sixth metal microstrip line; 5, a first dielectric layer; 51, a first metallized via; 6, a second dielectric layer; 61, a second metallized via; 7, a third dielectric layer; 8, a first adhesive layer; 9, a second adhesive layer; 10, a fourth metallized via; 11, a fifth metallized via; 12, a planar reflective array; 13, a horn antenna; 1301, a first metal sheet; 1302, a second metal sheet; 1303, a first metal column; 1304, a second metal column; 1305, a third metal column; 1306, a fourth metal column; 1307, a fifth metal column; 1308, a sixth metal column; 1309, a first metal surface; 1310, a second metal surface. DETAILED DESCRIPTION

[0050] The present invention is further analyzed below in conjunction with specific embodiments, but the specific examples here are only used to explain this application and are not limited to the specific examples presented here.

[0051] A low-profile reflective array antenna with dual linear polarization independent control and gain filtering characteristics, such as Fig. 9 Figure (a) Fig. 9The main part shown in Figure (b) includes: a plane reflection array 12 and a horn antenna 13; wherein, by rotating the horn antenna 13 120° and 90° relative to the plane reflection array, the x-polarization working state and the y-polarization working state of the antenna are realized. The plane reflection array 12 is quasi-circular in shape and, as a reflection surface, includes a plurality of periodically seamlessly distributed reflection units, each of which is square in shape. When the reflection unit is subjected to x-polarization and y-polarization incident waves, different reflection phases can be generated, thereby forming the beam direction required by the different polarization incident waves. The reflection unit includes a magnetoelectric dipole loaded with a split ring resonator, an x-polarized feeding part and a y-polarized feeding part. Each feeding part includes an independent feeding arm and an independent open-circuit metal microstrip line patch. The feeding arm and the open-circuit metal microstrip line patch are connected through a metallized via. The energy received by the magnetoelectric dipole in the working band can be effectively coupled to the feeding arm, and can be transmitted from the feeding arm through the metallized via to the open-circuit metal microstrip line patch, and reflected at the open-circuit metal microstrip line patch. Therefore, the reflection phase can be changed by adjusting the length of the open-circuit metal microstrip line patch. At low frequencies, the characteristics of magneto-electric dipoles are used to introduce radiation zeros. At high frequencies, the half-wavelength resonance characteristics of the split ring resonator are used to introduce radiation zeros to achieve filtering characteristics. Two polarization-independent 3-bit units are designed by reasonably selecting the lengths of the two open-circuit metal microstrip line patches on the bottom layer. The two polarization-independent 3-bit units are arranged to form a dual-polarization independently controllable reflectarray antenna to achieve different reflected beams for the x-polarized incident wave and the y-protected incident wave, thereby realizing a dual-polarization independently controllable low-profile reflectarray antenna with gain filtering characteristics.

[0052] The horn antenna 13 is used as a feed source, which is located directly above the plane reflection array 12 and can rotate around the central axis; the central axis is perpendicular to the plane reflection array 12; there is a gap between the horn antenna 13 and the plane reflection array 12, and its wide mouth faces the plane reflection array 12; Fig.10 Figure (a) Fig.10 Figure (b) Fig.10As shown in Figure (c), the horn antenna 13 is a broadband horn antenna, including a horn structure channel, a first metal sheet 1301, a second metal sheet 1302, a first metal surface 1309, a second metal surface 1310, and six metal pillars (i.e., a first metal pillar 1303, a second metal pillar 1304, a third metal pillar 1305, a fourth metal pillar 1306, a fifth metal pillar 1307, and a sixth metal pillar 1308); the narrow mouth of the horn structure channel is a closed mouth, and the wide mouth is an open end; the wide mouth of the horn structure channel faces the planar reflection array 12; the first metal surface 1309 and the wide mouth of the horn structure channel are respectively provided on two symmetrical sides. The second metal surface 1310; the wide mouth end of the speaker structure channel is also provided with a first metal sheet 1301 and a second metal sheet 1302 symmetrical around the central axis; the first metal sheet 1301 and the second metal sheet 1302 are located between the first metal surface 1309 and the second metal surface 1310, and one side of each is connected to the first metal surface 1309 and the second metal surface 1310 respectively; there is a gap between the first metal sheet 1301 and the second metal sheet 1302; three equally spaced metal columns are respectively arranged on the other two symmetrical sides of the wide mouth of the speaker structure channel, and the two ends of the metal columns are connected to the side of the first metal surface 1309 and the second metal surface 1310.

[0053] The wide aperture plane of the horn antenna 13 is parallel to the aperture plane of the planar reflection array 12 and the distance is 172 mm. When the long side of the wide aperture plane of the feed horn antenna 5 is parallel to the y-axis, that is, the rotation angle of the horn antenna is 0°, then the dual-linear polarization independently controlled low-profile reflection array antenna with gain filtering characteristics works in the x-polarization state; when the long side of the aperture plane of the feed horn antenna 5 is parallel to the x-axis, that is, the rotation angle of the horn antenna is 90°, then the single-layer broadband reflection array antenna with independent dual-linear polarization control works in the y-polarization state, that is, the working state of the dual-linear polarization independently controlled low-profile reflection array antenna with gain filtering characteristics is switched by rotating the feed horn antenna around the z-axis to generate independently controllable x-polarization and y-polarization reflection beams.

[0054] like Figure 1-Figure 2 As shown, each reflection unit comprises, from top to bottom, a first metal layer 1, a first dielectric layer 5, a first adhesive layer 8, a second metal layer 2, a second dielectric layer 6, a third metal layer 3, a third adhesive layer, a third dielectric layer 7 and a fourth metal layer 4.

[0055] like Figure 3 As shown, the first metal layer 1 adopts a rectangular metal patch 101, whose length and width are much smaller than those of the first dielectric layer 5; the half length of the rectangular metal patch 101 is l9, and the width is W7.

[0056] like Figure 4As shown in Figure (a), the second metal layer 2 includes four metal open ring patches 21, a first strip metal patch 22, a second strip metal patch 23 and a third strip metal patch 24; wherein the four metal open ring patches 21 are centrally symmetrically distributed in a 2×2 matrix, and there are gaps between adjacent metal open ring patches 21; the first strip metal patch 22 is located in the gap of the four top metal open ring patches 21 parallel to the width direction of the first dielectric layer 5, the second strip metal patch 23 and the third strip metal patch 24 are located in the gap of the four top metal open ring patches 21 parallel to the length direction of the first dielectric layer 5, and are respectively located on both sides of the first strip metal patch 22, and are both at a distance from the first strip metal patch 22.

[0057] The first strip-shaped metal patch 22 , the second strip-shaped metal patch 23 and the third strip-shaped metal patch 24 are not in contact with the four metal open ring patches 21 .

[0058] Each top metal open ring patch 21 adopts a square open ring 211, the openings of the square open ring 211 are all set to face outward, and the openings are located at the top corners, and the openings of the square open ring 211 are bent inwards. A rectangular metal patch 212 is provided in the inner space of the square open ring 211 at a position opposite to the opening; two adjacent sides of the rectangular metal patch 212 are connected to the square open ring 211, and the other two adjacent sides face the inner space of the square open ring 211.

[0059] The open ring openings of the four top-layer metal open ring patches 21 are respectively located at four diagonal positions of the first dielectric layer 5 , and are spaced apart from the edges of the first dielectric layer 5 and the second dielectric layer 6 .

[0060] The two ends of the first metal layer 1 are connected to the second strip metal patch 23 and the third strip metal patch 24 of the second metal layer 2 through two first metalized vias 51; the first metalized via 51 passes through the first dielectric layer 5 and the first adhesive layer 8; the distance from the first metalized via 51 to the short side of the rectangular metal patch 101 is d2, and the diameter of the first metalized via 51 is r1.

[0061] The four metal open ring patches 21 are connected to the third metal layer 3 through four second metallized vias 61 penetrating the second dielectric layer 6 , respectively.

[0062] like Figure 4 As shown in Figure (b), the length of the longest side of the metal open ring patch 21 is 3 , with a width of w 2 , the length of the second longest side is 4 , with a width of w 2 , the short side length is 5 , with a width of w 3 , there is a piece of width w near the center of the unit 1 The rectangular metal patch 212 is connected to the second metallized via 61. The distance between the second metallized via 61 and the edge of the square opening ring 211 is d1, and the distance between the second metallized via 61 and the center of the unit is d. The longer y-axis (width) length of the first strip metal patch 22 is 2 , the shorter y-axis (width) length is 1 , width is w4, the length of the second strip metal patch 23 is l10, the width is w4, the length of the third strip metal patch 24 is l11, the width is w4, and the distance between the first metallized via 51 and the short side of the first strip metal patch 22 and the third strip metal patch 24 close to the center of the unit is d4.

[0063] like Figure 5 The third metal layer 3 is a grounded metal surface, and a first hole 31 and a second hole 32 are formed in the third metal layer 3 .

[0064] The first strip metal patch 22 is connected to the fourth metal layer 4 through the fourth metalized via 10; the fourth metalized via 10 passes through the second dielectric layer 6, the second hole 32 of the third metal layer 3, the third adhesive layer, and the third dielectric layer 7; the size of the second hole 32 is larger than the diameter of the fourth metalized via 10, so that the fourth metalized via 10 is not in contact with the third metal layer 3.

[0065] The second strip metal patch 23 is connected to the fourth metal layer 4 through the fifth metalized via 11; the fifth metalized via 11 passes through the second dielectric layer 6, the first hole 31 of the third metal layer 3, the third adhesive layer, and the third dielectric layer 7; the size of the first hole 31 is larger than the diameter of the fifth metalized via 11, so that the fifth metalized via 11 does not contact the third metal layer 3.

[0066] like Figure 6 As shown in FIG. 5( a ), the fourth metal layer 4 includes a first open metal microstrip line patch 41 and a second open metal microstrip line patch 42 .

[0067] The first open-circuit metal microstrip line patch 41 includes a first metal microstrip line 411, a second metal microstrip line 412, and a third metal microstrip line 413; the first metal microstrip line 411 is mainly used to adjust the reflection phase by adjusting the length, the second metal microstrip line 412 is connected to the first metal microstrip line 411 and also plays a role in impedance matching, and the third metal microstrip line 413 is used to connect to the fifth metalized via 11.

[0068] The second open-circuit metal microstrip line patch 42 includes a fourth metal microstrip line 421, a fifth metal microstrip line 422, and a sixth metal microstrip line 423; the fourth metal microstrip line 421 is mainly used to adjust the reflection phase by adjusting the length, the fifth metal microstrip line 422 is connected to the fourth metal microstrip line 421 and also plays a role in impedance matching, and the sixth metal microstrip line 423 is used to connect to the fourth metallized via 10.

[0069] Figure 6 As shown in FIG. (b), the distance between the fourth metallized via 10 and the fifth metallized via 11 and the short side of the fifth rectangular metal patch 412 and the fifth metal microstrip line 422 is l12, and the width of the fifth rectangular metal patch 412 and the fifth metal microstrip line 422 is w5 and the length is l6. The sixth rectangular metal patch 413 and the sixth metal microstrip line 423 are w6 wide and l7 long. The first metal microstrip line patch 411 is composed of eight metal patches of different lengths, with lengths of l120, l121, l122, l123, l124, l125, l126 and l127 respectively. The second metal microstrip line patch 421 is composed of eight metal patches of different lengths, with lengths of l20, l21, l22, l23, l24, l25, l26 and l27 respectively. The width of the first metal microstrip line patch 411 and the second metal microstrip line patch 421 are both l9.

[0070] The metal open ring patch 21 is connected to the third metal surface 3 through the second metallized via 61 penetrating the second dielectric layer 6 to form a magneto-electric dipole. The second rectangular metal patch 22, as a feeding arm in the x-polarization direction of the magneto-electric dipole, is connected to the second open metal microstrip line patch 42 through the fourth metallized via 10 penetrating the second metal layer 2, the second dielectric layer 6, the second hole 32, the second adhesive layer 9 and the third dielectric layer 7. The reflection phase of the x-polarization is adjusted separately by adjusting the length of the second metal microstrip line patch 421. The first rectangular metal patch 101, the third rectangular metal patch 23 and the fourth rectangular metal patch 24 are connected as the feeding arm of the magnetoelectric dipole y polarization direction through the first metallized via 51 penetrating the first dielectric layer 5 and the first adhesive layer 8, and are connected to the first open metal microstrip line patch 41 through the fifth metallized via 11 penetrating the second metal layer 2, the second dielectric layer 6, the first circular hole 31, the second adhesive layer 9 and the third dielectric layer 7. The reflection phase of y polarization is adjusted separately by adjusting the length of the first metal microstrip line patch 411. The reflection phase of x polarization is adjusted by adjusting the length of the first open metal microstrip line patch 41, and the reflection phase of y polarization is adjusted by adjusting the length of the second open metal microstrip line patch 42, so as to realize independent control of dual-line polarization.

[0071] The spacing between the centers of adjacent reflection units is p; p may be 6.5 mm.

[0072] The first open-circuit metal microstrip line patches 41 of all the reflective units in the planar reflective array 12 are completely the same, or different, or not completely the same.

[0073] The second open-circuit metal microstrip line patches 42 of all the reflective units in the planar reflective array 12 are completely the same, or different, or not completely the same.

[0074] The dielectric substrate used in the first dielectric layer 1 is of Rogers 4313B, with a relative dielectric constant of 3.66, a loss tangent of 0.0037, and a thickness h1 of 0.254 mm.

[0075] The model of the dielectric substrate used in the second dielectric layer 2 is Rogers 4313B, with a relative dielectric constant of 3.66, a loss tangent of 0.0037, and a thickness h2 of 1.524 mm.

[0076] The model of the dielectric substrate used in the third dielectric layer 3 is Rogers 4313B, with a relative dielectric constant of 3.66, a loss tangent of 0.0037, and a thickness h3 of 0.138 mm.

[0077] The dielectric substrates used in the first adhesive layer 8 and the second adhesive layer 9 are of Rogers 4413F, with a relative dielectric constant of 3.7, a loss tangent of 0.004, and a thickness of 0.1 mm.

[0078] The first metal layer 1 , the second metal layer 2 , the third metal layer 3 and the fourth metal layer 4 are made of copper with a thickness of 0.036 mm.

[0079] To sum up, it is preferred to select d=1.4, d1=0.9, d2=0.3, d3=0.3, d4=0.3, h1=0.254,h2=1.524, h3=0.138, l1=1.3, l2=2.2, l3=2.5, l4=2.3, l5=1.2, l6=1, l7=2.6, l8=0.1, l9=1.05, l10=1.1, l11=1.4, l12=0.3, p=6.5, r1=0.4, r2=0.8, w1=1.2, w2=0.5, w3=0.3, w4=0.6, w5=0.9,w6=0.7, w7=0.6 to constitute the reflection unit. The planar transmission array 13 has a diameter of 221 mm and includes 912 reflection units.

[0080] like Figure 7As shown in Figure (a), by optimizing the lengths of eight groups of fourth metal microstrip lines 421, eight x-polarization reflection phase difference units of 45° are realized at 9.5 GHz, and the reflection amplitude is above -1.5 dB in the frequency range of 8-11 GHz except for the 90° unit.

[0081] like Figure 7 As shown in Figure (b), by optimizing the lengths of eight groups of first metal microstrip line patches 411, eight units with a y-polarization reflection phase difference of 45° are realized at 9.5 GHz, and the reflection amplitude is above -1.5 dB within the frequency range of 8-11 GHz except for the 90° unit.

[0082] like Figure 8 As shown in Figure (a), when the incident electromagnetic wave is x-polarized, the reflection phase of x-polarization is fixed at -90°. When the reflection phase of y-polarization changes between -90°, 0° and 90°, the emission phase of x-polarization does not change. Figure 8 As shown in Figure (b), when the incident electromagnetic wave is y-polarized, the reflection phase of the y-polarization is fixed at -90°. When the reflection phase of the x-polarization changes between -90°, 0° and 90°, the emission phase of the y-polarization does not change. This indicates that the designed unit can produce different reflection phases for electromagnetic waves of different polarizations and can achieve independent controllable dual linear polarization.

[0083] This embodiment also provides a phase control method for the above-mentioned dual-polarization independently controlled low-profile reflective array antenna with gain filtering characteristics, including the following steps: Step 1: First, design a reflection unit that can generate independent phase responses to x-polarized incident waves and y-polarized incident waves. This reflection unit adopts a 3-bit design method, that is, eight units with a phase difference of 45°.

[0084] Step 2: Calculate the phase compensation required for the x-polarized incident wave and the y-polarized incident wave according to the directions in which the x-polarized wave and the y-polarized wave need to be generated and the distance from the horn antenna 13 to the planar reflection array 12 .

[0085] Step 3: According to the required phase compensation corresponding to the phase compensation that can be provided by the eight units, the unit that can provide the phase compensation closest to the calculated phase compensation is selected as the actual unit, and all the units are selected to form a reflection array surface.

[0086] Depend on Fig.11 Figure (a) and Fig.11As shown in Figure (b), when the dual-polarization independently controlled single-layer broadband reflectarray antenna works in the x-polarization state, the main beam direction of the E plane is 25°, which is consistent with expectations. The sidelobe level and cross polarization of the E plane are lower than -14dB and -29dB respectively. The sidelobe level and cross polarization of the H plane are lower than -18dB and -26dB respectively.

[0087] Depend on Fig.12 Figure (a) and Fig.12 As shown in Figure (b), when the dual-polarization independently controlled single-layer broadband reflectarray antenna works in the y-polarization state, the main beam direction of the E plane is 25°, which is consistent with expectations. The sidelobe level and cross-polarization of the E plane are lower than -15dB and -29dB respectively. The sidelobe level and cross-polarization of the H plane are lower than -18dB and -29dB respectively.

[0088] Depend on Fig.13 It can be seen that when this example is in the x-polarization working state, the maximum gain of 21.77dBi can be achieved, the corresponding aperture efficiency is 35.1%, the 3dB gain bandwidth is 19.3%, and the selectivity is 0.5. In the y-polarization working state, the maximum gain of 21.93dBi can be achieved, the corresponding aperture efficiency is 36.4%, the 3dB gain bandwidth is 18.5%, and the selectivity is 0.52.

[0089] In summary, the dual-linear polarization independently controlled low-profile reflective array antenna with gain filtering characteristics of the present invention produces a filtering characteristic by utilizing the characteristics of the ME dipole to generate a radiation zero point at a low frequency, and by forming a split ring resonator through an open ring to generate a radiation zero point at a high frequency, and independently adjusts the reflection phase of the x-polarization and y-polarization electromagnetic waves by adjusting the length of two independent metal microstrip lines, thereby achieving independent control of the dual-linear polarization.

[0090] The above is a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A low-profile reflective array antenna with dual-polarization independent control and gain filtering characteristics, the main body of which includes: A planar reflective array (12) as a reflective surface; A horn antenna (13) as a feed source, which is located directly above the planar reflection array (12) and can rotate around a central axis; the central axis is perpendicular to the planar reflection array (12); The x-polarization working state and the y-polarization working state of the antenna are realized by rotating the horn antenna (13) 0° and 90° relative to the planar reflection array (12); The feature is that the planar reflection array (12) comprises a plurality of periodically distributed reflection units, each reflection unit being, from top to bottom, a first metal layer (1), a first dielectric layer (5), a first adhesive layer (8), a second metal layer (2), a second dielectric layer (6), a third metal layer (3), a third adhesive layer, a third dielectric layer (7) and a fourth metal layer (4); The second metal layer (2) comprises four metal open ring patches (21), a first strip metal patch (22), a second strip metal patch (23) and a third strip metal patch (24); wherein the four metal open ring patches (21) are arranged in a centrally symmetrical manner, and there is a gap between adjacent metal open ring patches (21); the first strip metal patch (22) is located in the gap of the four top metal open ring patches (21) parallel to the width direction of the first dielectric layer (5), and the second strip metal patch (23) and the third strip metal patch (24) are located in the gap of the four top metal open ring patches (21) parallel to the length direction of the first dielectric layer (5), and are respectively located on both sides of the first strip metal patch (22), and are both spaced apart from the first strip metal patch (22); The two ends of the first metal layer (1) are connected to the second strip-shaped metal patch (23) and the third strip-shaped metal patch (24) of the second metal layer (2) through two first metallized vias (51); the first metallized vias (51) penetrate the first dielectric layer (5) and the first adhesive layer (8); The four metal open ring patches (21) are respectively connected to the third metal layer (3) through four second metallized vias (61) penetrating the second dielectric layer (6); The third metal layer (3) is provided with a first hole (31) and a second hole (32); The first strip-shaped metal patch (22) is connected to the fourth metal layer (4) via a fourth metalized via hole (10); the fourth metalized via hole (10) penetrates the second dielectric layer (6), the second hole (32) of the third metal layer (3), the third adhesive layer, and the third dielectric layer (7), and the fourth metalized via hole (10) does not contact the third metal layer (3); The second strip-shaped metal patch (23) is connected to the fourth metal layer (4) via a fifth metalized via hole (11); the fifth metalized via hole (11) penetrates the second dielectric layer (6), the first hole (31) of the third metal layer (3), the third adhesive layer, and the third dielectric layer (7), and the fifth metalized via hole (11) does not contact the third metal layer (3); The fourth metal layer (4) comprises a first open-circuit metal microstrip line patch (41) and a second open-circuit metal microstrip line patch (42); A magnetoelectric dipole is formed by four metal open ring patches (21), a second metalized via hole (61), and a third metal layer (3); the first metal layer (1), the second strip metal patch (23), and the third strip metal patch (24) are connected through a first metalized via hole (51) to form a y-polarized feeding arm of the magnetoelectric dipole; the first strip metal patch (22) is an x-polarized feeding arm of the magnetoelectric dipole; the x-polarized feeding arm is connected to a first open-circuit metal microstrip line patch (41) through a fifth metalized via hole (11); and the y-polarized feeding arm is connected to a second open-circuit metal microstrip line patch (42) through a fourth metalized via hole (10).

2. The low-profile reflectarray antenna according to claim 1, characterized in that: The first metal layer (1) is a rectangular metal patch whose length and width are smaller than those of the first dielectric layer (5).

3. The low-profile reflectarray antenna according to claim 1, characterized in that: The first strip-shaped metal patch (22), the second strip-shaped metal patch (23) and the third strip-shaped metal patch (24) are not in contact with the four metal open ring patches (21).

4. The low-profile reflectarray antenna according to claim 1, characterized in that: The openings of the metal open ring patches (21) are all arranged to face outwards.

5. The low-profile reflectarray antenna according to claim 1, characterized in that: The reflection phase of the x-polarization is adjusted by adjusting the length of the first open-circuit metal microstrip line patch (41), and the reflection phase of the y-polarization is adjusted by adjusting the length of the second open-circuit metal microstrip line patch (42), thereby realizing independent control of dual-line polarization.

6. The low-profile reflectarray antenna according to claim 1, characterized in that: Each top metal open ring patch (21) adopts a square open ring (211), the opening of the square open ring (211) is located at a top corner position, and the opening of the square open ring (211) is bent inwards, and a rectangular metal patch (212) is provided in the inner space of the square open ring (211) at a position opposite to the opening; two adjacent sides of the rectangular metal patch (212) are connected to the square open ring (211), and the other two adjacent sides face the inner space of the square open ring (211).

7. The low-profile reflectarray antenna according to claim 1, characterized in that: The open ring openings of the four top metal open ring patches (21) are respectively located at four diagonal positions of the first dielectric layer (5), and are spaced apart from the edges of the first dielectric layer (5) and the second dielectric layer (6).

8. The low-profile reflectarray antenna according to claim 1, characterized in that: There is a gap between the planar reflection array (12) and the horn antenna (13).

9. The low-profile reflectarray antenna according to claim 1, characterized in that: The wide opening of the horn antenna (13) faces the planar reflection array (12).

10. The low-profile reflectarray antenna according to claim 1, characterized in that: The first open-circuit metal microstrip line patches (41) of all the reflection units in the planar reflection array (12) are completely identical, completely different, or not completely identical; The second open-circuit metal microstrip line patches (42) of all reflection units in the planar reflection array (12) are completely identical, completely different, or not completely identical.

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