Gallium nitride-based semiconductor laser element

Abstract

The invention discloses a gallium nitride-based semiconductor laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a quantum spin transport layer is arranged between the active layer and the lower waveguide layer. The quantum spin transport layer forms a low-dimensional topological structure with multiple topological surface states coexisting, a Dirac surface state is formed, long-distance spin transport under multi-topological protection is constructed, topological energy bands and spin transport of the active layer and the waveguide layer are cooperatively regulated, the spin current-charge current conversion efficiency is improved, and the quantum spin transport layer has a wide application prospect. The uniformity of carrier injection into the active layer is improved, the quantum recombination efficiency of the active layer is improved, and the slope efficiency and the optical power of the laser are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Lasers are generated by stimulated radiation of carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level; 2) The current density of the laser is as high as KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes spontaneously radiate incoherent light from high energy levels to low energy levels without external effects, while lasers radiate stimulated transitions. The energy of induced photons should be equal to the difference in energy levels of electron transitions, generating photons and induced photons that are completely coherent light; 4) Different principles: light-emitting diodes produce radiation recombination and luminescence under the action of external voltage when electron holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met before they can be lased. The carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor lasers have the following problems: quantum well polarization electric field increases hole injection barrier, holes overflow active layer, etc., hole injection is uneven and inefficient, resulting in serious asymmetric mismatch between electrons and holes in quantum wells, electron leakage and carrier delocalization, more difficult hole transport in quantum wells, uneven carrier injection, uneven gain, and at the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency. The laser valence band step difference increases, holes are more difficult to transport in quantum wells, carrier injection is uneven, and gain is uneven. Summary of the invention

[0005] The present invention proposes a gallium nitride-based semiconductor laser element, which enables a quantum spin transport layer to form a low-dimensional topological structure in which multiple topological surface states coexist, forms a Dirac surface state, constructs long-distance spin transport under multiple topological protection, and coordinately regulates the topological energy bands and spin transport of the active layer and the waveguide layer, thereby improving the spin flow-charge flow conversion efficiency, improving the uniformity of carrier injection into the active layer, improving the quantum recombination efficiency of the active layer, and improving the slope efficiency and optical power of the laser.

[0006] The present invention provides a gallium nitride-based semiconductor laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein a quantum spin transport layer is arranged between the active layer and the lower waveguide layer; the quantum spin transport layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, MnBi2Te4, VS2, VS, CsMnF3, and CsMnCl3.

[0007] Preferably, the electron mobility distribution of the quantum spin transport layer has the function y=A+B*sinx / e x Curve distribution; the electron mobility of the quantum spin transport layer ≤ the electron mobility of the lower waveguide layer ≤ the electron mobility of the active layer.

[0008] Preferably, the electron effective mass distribution of the quantum spin transport layer has a function y=C+D*x 2 sinx first quadrant curve distribution; the electron effective mass of the active layer ≤ the electron effective mass of the lower waveguide layer ≤ the electron effective mass of the quantum spin transport layer.

[0009] Preferably, the bandgap width distribution of the quantum spin transport layer has a function y=E+F*e x sinx curve distribution; the bandgap width of the active layer ≤ the bandgap width of the lower waveguide layer ≤ the bandgap width of the quantum spin transport layer.

[0010] Preferably, the dielectric constant distribution of the quantum spin transport layer has the function y=G+H*x 2 +J*sinx curve distribution; the dielectric constant of the quantum spin transport layer ≤ the dielectric constant of the lower waveguide layer ≤ the dielectric constant of the active layer.

[0011] Preferably, the In element concentration distribution of the quantum spin transport layer has a function y=K+L*x 2 +M*sinx curve distribution; the In element concentration of the quantum spin transport layer ≤ the In element concentration of the lower waveguide layer ≤ the In element concentration of the active layer.

[0012] Preferably, the In / H element ratio distribution of the quantum spin transport layer has a function y=N+P*x 2 +Q*sinx curve distribution; the In / H element ratio of the quantum spin transport layer ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer;

[0013] The In / C element ratio distribution of the quantum spin transport layer has a function y=R+S*x 2 +T*sinx curve distribution; the In / C element ratio of the quantum spin transport layer ≤ the In / C element ratio of the lower waveguide layer ≤ the In / C element ratio of the active layer;

[0014] The In / O element ratio distribution of the quantum spin transport layer has a function y=U+V*x 2 +W*sinx curve distribution; the In / O element ratio of the quantum spin transport layer ≤ the In / O element ratio of the lower waveguide layer ≤ the In / O element ratio of the active layer.

[0015] Preferably, the electron mobility distribution, electron effective mass distribution, bandgap width distribution, and dielectric constant distribution of the quantum spin transport layer have the following relationship: C≤E≤G≤A; the In element concentration distribution, In / H element ratio distribution, In / C element ratio distribution, and In / O element ratio distribution of the quantum spin transport layer have the following relationship: N≤U≤R≤K.

[0016] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0017] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0018] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0019] Compared with the prior art, the gallium nitride-based semiconductor laser element provided by the embodiment of the present invention has the following beneficial effects:

[0020] The quantum spin transport layer forms a low-dimensional topological structure with multiple topological surface states coexisting, forming Dirac surface states, constructing long-distance spin transport under multiple topological protection, and synergistically regulating the topological energy bands and spin transport of the active layer and the waveguide layer, improving the spin flow-charge flow conversion efficiency, improving the uniformity of carrier injection into the active layer, improving the quantum recombination efficiency of the active layer, and improving the slope efficiency and optical power of the laser;

[0021] The active layer and the waveguide layer form a huge spin momentum splitting, generate a spin triplet supercurrent, increase the carrier transport channel, enhance the injection of spin polarized holes into the active layer, regulate the polarization electric field of the active layer, increase the electron and hole transport in the active layer, improve the overlap probability of the electron-hole wave function in the active layer and the uniformity of the electron-hole distribution, accelerate the stimulated radiation of the laser element, reduce the excitation threshold of the laser element, enhance the limitation factor, and improve the lasing power and slope efficiency of the laser element;

[0022] Further enhance the topological energy band and spin transport regulation of the active layer and waveguide layer, reduce the valence band order of the laser, enhance the hole transport of the active layer, accelerate the population inversion of the active layer, increase the peak gain, enhance the stimulated radiation of the laser, and reduce the excitation threshold of the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic structural diagram of a gallium nitride-based semiconductor laser element according to an embodiment of the present invention;

[0024] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a gallium nitride-based semiconductor laser element according to an embodiment of the present invention;

[0025] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: quantum spin transport layer. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] In order to solve the above problems, a gallium nitride-based semiconductor laser element provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0028] Reference Figure 1-2The present invention provides a gallium nitride-based semiconductor laser element, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A quantum spin transport layer 106 is provided between the active layer 103 and the lower waveguide layer 102; the quantum spin transport layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs , AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, MnBi2Te4, VS2, VS, CsMnF3, CsMnCl3, any one or any combination.

[0029] The electron mobility distribution of the quantum spin transport layer 106 has the function y=A+B*sinx / e x Curve distribution; the electron mobility of the quantum spin transport layer 106 ≤ the electron mobility of the lower waveguide layer 102 ≤ the electron mobility of the active layer 103 .

[0030] The electron effective mass distribution of the quantum spin transport layer 106 has the function y=C+D*x 2 sinx first quadrant curve distribution; the electron effective mass of the active layer 103 ≤ the electron effective mass of the lower waveguide layer 102 ≤ the electron effective mass of the quantum spin transport layer 106 .

[0031] The bandgap width distribution of the quantum spin transport layer 106 has a function y=E+F*e x sinx curve distribution; the bandgap width of the active layer 103 ≤ the bandgap width of the lower waveguide layer 102 ≤ the bandgap width of the quantum spin transport layer 106 .

[0032] The dielectric constant distribution of the quantum spin transport layer 106 has the function y=G+H*x 2 +J*sinx curve distribution; the dielectric constant of the quantum spin transport layer 106 ≤ the dielectric constant of the lower waveguide layer 102 ≤ the dielectric constant of the active layer 103 .

[0033] In summary; the quantum spin transport layer 106 forms a low-dimensional topological structure in which multiple topological surface states coexist, forms Dirac surface states, constructs long-distance spin transport under multiple topological protection, and coordinately regulates the topological energy bands and spin transport of the active layer 103 and the waveguide layer, thereby improving the spin current-charge current conversion efficiency, improving the uniformity of carrier injection into the active layer, improving the quantum recombination efficiency of the active layer 103, and improving the slope efficiency and optical power of the laser.

[0034] The In element concentration distribution of the quantum spin transport layer 106 has a function y=K+L*x 2 +M*sinx curve distribution; the In element concentration of the quantum spin transport layer 106 ≤ the In element concentration of the lower waveguide layer 102 ≤ the In element concentration of the active layer 103 .

[0035] The In / H element ratio distribution of the quantum spin transport layer 106 has a function y=N+P*x 2 +Q*sinx curve distribution; the In / H element ratio of the quantum spin transport layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 ≤ the In / H element ratio of the active layer 103;

[0036] The In / C element ratio distribution of the quantum spin transport layer 106 has a function y=R+S*x 2 +T*sinx curve distribution; the In / C element ratio of the quantum spin transport layer 106 ≤ the In / C element ratio of the lower waveguide layer 102 ≤ the In / C element ratio of the active layer 103;

[0037] The In / O element ratio distribution of the quantum spin transport layer 106 has a function y=U+V*x 2 +W*sinx curve distribution; the In / O element ratio of the quantum spin transport layer 106 ≤ the In / O element ratio of the lower waveguide layer 102 ≤ the In / O element ratio of the active layer 103 .

[0038] In summary, a huge spin momentum splitting is formed between the active layer 103 and the lower waveguide layer 102, a spin triplet supercurrent is generated, the carrier transport channel is increased, the spin polarized hole injection into the active layer 103 is enhanced, the polarization electric field of the active layer 103 is regulated, the electron and hole transport of the active layer 103 is increased, the overlapping probability of the electron-hole wave function of the active layer 103 and the uniformity of the electron-hole distribution are improved, the stimulated radiation of the laser element is accelerated, the excitation threshold of the laser element is reduced, the limitation factor is enhanced, and the lasing power and slope efficiency of the laser element are improved.

[0039] The electron mobility distribution, electron effective mass distribution, bandgap width distribution, and dielectric constant distribution of the quantum spin transport layer 106 have the following relationship: C≤E≤G≤A; the In element concentration distribution, In / H element ratio distribution, In / C element ratio distribution, and In / O element ratio distribution of the quantum spin transport layer 106 have the following relationship: N≤U≤R≤K. The topological energy band and spin transport regulation of the active layer 103 and the lower waveguide layer 102 are further enhanced, the valence band order of the laser is reduced, the hole transport of the active layer 103 is enhanced, the particle number inversion of the active layer 103 is accelerated, the peak gain is increased, the stimulated radiation of the laser is enhanced, and the excitation threshold of the laser element is reduced.

[0040] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0041] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.39 74％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.73 -70％ Optical power(W) 5.2 12.7 144％ Limiting Factor 1.40％ 6.13％ 338％

[0042] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0043] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0044] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0045] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A gallium nitride-based semiconductor laser element, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A quantum spin transport layer (106) is provided between the active layer (103) and the lower waveguide layer (102); the quantum spin transport layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, MnBi2Te4, VS2, VS, CsMnF3, and CsMnCl3.

2. A gallium nitride-based semiconductor laser element according to claim 1, characterized in that: The electron mobility distribution of the quantum spin transport layer (106) has a function y=A+B*sinx / e x Curve distribution; the electron mobility of the quantum spin transport layer (106) ≤ the electron mobility of the lower waveguide layer (102) ≤ the electron mobility of the active layer (103).

3. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The electron effective mass distribution of the quantum spin transport layer (106) has the function y=C+D*x 2 The sinx first quadrant curve is distributed; the electron effective mass of the active layer (103) is ≤ the electron effective mass of the lower waveguide layer (102) ≤ the electron effective mass of the quantum spin transport layer (106).

4. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that: The bandgap width distribution of the quantum spin transport layer (106) has a function y=E+F*e x sinx curve distribution; the bandgap width of the active layer (103) is ≤ the bandgap width of the lower waveguide layer (102) ≤ the bandgap width of the quantum spin transport layer (106).

5. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The dielectric constant distribution of the quantum spin transport layer (106) has the function y=G+H*x 2 +J*sinx curve distribution; the dielectric constant of the quantum spin transport layer (106) ≤ the dielectric constant of the lower waveguide layer (102) ≤ the dielectric constant of the active layer (103).

6. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The In element concentration distribution of the quantum spin transport layer (106) has a function y=K+L*x 2 +M*sinx curve distribution; the In element concentration of the quantum spin transport layer (106) is ≤ the In element concentration of the lower waveguide layer (102) ≤ the In element concentration of the active layer (103).

7. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The In / H element ratio distribution of the quantum spin transport layer (106) has a function y=N+P*x 2 +Q*sinx curve distribution; the In / H element ratio of the quantum spin transport layer (106) ≤ the In / H element ratio of the lower waveguide layer (102) ≤ the In / H element ratio of the active layer (103); The In / C element ratio distribution of the quantum spin transport layer (106) has a function y=R+S*x 2 +T*sinx curve distribution; the In / C element ratio of the quantum spin transport layer (106) ≤ the In / C element ratio of the lower waveguide layer (102) ≤ the In / C element ratio of the active layer (103); The In / O element ratio distribution of the quantum spin transport layer (106) has a function y=U+V*x 2 +W*sinx curve distribution; the In / O element ratio of the quantum spin transport layer (106) ≤ the In / O element ratio of the lower waveguide layer (102) ≤ the In / O element ratio of the active layer (103).

8. A gallium nitride-based semiconductor laser element according to any one of claims 2 to 7, characterized in that: The electron mobility distribution, electron effective mass distribution, bandgap width distribution, and dielectric constant distribution of the quantum spin transport layer (106) have the following relationship: C≤E≤G≤A; the In element concentration distribution, In / H element ratio distribution, In / C element ratio distribution, and In / O element ratio distribution of the quantum spin transport layer (106) have the following relationship: N≤U≤R≤K.

9. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

10. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

11. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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