Correction method and device for through hole graph layout and computer readable storage medium

Abstract

The invention relates to a correction method and device for a through hole graph layout and a computer readable storage medium, and the method comprises the steps: obtaining an original through hole graph layout which comprises at least one through hole graph, and each through hole graph comprises at least one to-be-corrected edge; obtaining feature information of a to-be-corrected edge of the through hole graph, and calculating a correction direction and an initial correction amount of the to-be-corrected edge; generating an initial correction through hole graph layout based on the correction direction and the initial correction amount of the to-be-corrected edge; and re-correcting the initial corrected through hole pattern layout, and outputting the corrected through hole pattern layout after a preset condition is met through loop iterative calculation of multiple optical proximity corrections. According to the method provided by the invention, the correction direction and the initial correction amount of each edge of the through hole graph are pre-judged based on the graph distribution condition around the through hole graph, and the loop iterative calculation of multiple optical proximity correction is carried out by taking the initial correction amount as the initial value, so that the operation time of the optical proximity correction is greatly saved, and the correction efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method and device for correcting a through-hole pattern layout, and a computer-readable storage medium. Background Art

[0002] In the photolithography process, the pattern on the mask is projected onto the photoresist through the exposure system. However, when the pattern in the photolithography mask area is close to the exposure wavelength, the imperfection of the optical system and the diffraction effect will cause the pattern on the photoresist to be inconsistent with the pattern on the mask. This phenomenon is called the optical proximity effect (OPE). In order to correct the optical proximity effect, it is necessary to perform optical proximity correction (OPC) on the pattern on the mask.

[0003] In the existing model-based optical proximity algorithm, each edge of the graph is first cut into different line segments according to certain rules, and then an evaluation point for calculating the edge placement error (EPE) is placed in each line segment. Each line segment is moved cyclically so that the sum of the squares of the edge placement error EPE of each parity point of the graph converges to a certain threshold or the number of cycles reaches the set upper limit, then the correction cycle ends. In the correction cycle, the initial value of each line segment is usually zero, so it often takes many cycles to converge, and even fails to converge.

[0004] In the optical proximity correction method of the through-hole layer, usually the four sides of the through-hole pattern correspond to four evaluation points. By cyclically moving the four sides of the through-hole pattern, the square sum of the edge placement error EPE of the four evaluation points converges to a certain threshold or the number of cycles reaches the set upper limit, and then the correction cycle ends. However, since the influence of other through-hole patterns around the through-hole pattern needs to be considered during the optical proximity correction of the through-hole pattern, the number of convergence cycles will be greatly increased, and the calculation time of the optical proximity correction will be increased, which will lead to the problem of low correction efficiency of the optical proximity correction.

[0005] Among the existing optical proximity correction methods for through-hole layers, there are methods that preset initial correction parameters for each side of the through-hole layer (including correction direction and correction value), but the preset initial correction parameters for each side of the through-hole layer need to be based on the simulation results of the lithography model or obtained from actual measurement data; there are also methods that only judge the spacing between simple through-hole layer graphics, which is easy to get wrong judgment results when the through-hole graphic layout is very complicated, which in turn increases the correction cycle and the calculation time. Summary of the invention

[0006] The embodiments of the present application provide a method, device and computer-readable storage medium for correcting a through-hole pattern layout, so as to improve the correction efficiency of optical proximity correction of a through-hole pattern on a mask.

[0007] The embodiment of the present application provides a method for correcting a through hole pattern layout, comprising:

[0008] Acquire an original through-hole pattern layout, wherein the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one edge to be corrected;

[0009] Acquire characteristic information of the side to be corrected of the through-hole pattern, and calculate the correction direction and initial correction amount of the side to be corrected, wherein the characteristic information includes the length of the side to be corrected, and / or the spacing between the side to be corrected and an adjacent pattern, and / or the projection length of the side to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the side to be corrected along a target direction, and the target direction is perpendicular to the length direction of the side to be corrected;

[0010] Based on the correction direction and initial correction amount of the edge to be corrected, generating an initial corrected through-hole pattern layout;

[0011] The initial corrected through hole pattern layout is corrected again, and after multiple optical proximity correction cyclic iterative calculations, a corrected through hole pattern layout is outputted after satisfying preset conditions.

[0012] Furthermore, the acquiring of feature information of the to-be-corrected edge of the through-hole pattern and the calculation of the correction direction and initial correction amount of the to-be-corrected edge include:

[0013] Acquire the feature information of each edge to be corrected, and calculate the correction influence factor of each edge to be corrected;

[0014] Determining a correction direction of each of the edges to be corrected according to the correction influence factor of each of the edges to be corrected;

[0015] Based on the feature information, an initial correction amount of the edge to be corrected is calculated.

[0016] Furthermore, the correction influence factor α of the edge to be corrected is calculated as follows:

[0017]

[0018] Among them, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, Sn is the spacing between the edge to be corrected and the nth adjacent graphic, and W is the length of the edge to be corrected.

[0019] Furthermore, the through hole pattern is a square hole, the cross section is a square or a rectangle, and the four sides of the square or rectangle are the four sides to be corrected;

[0020] Determining the correction direction of each edge to be corrected according to the correction influence factor of each edge to be corrected includes:

[0021] Determine, from the four edges to be corrected, a first edge to be corrected having the smallest correction influence factor, a second edge to be corrected parallel to the first edge to be corrected, a third edge to be corrected, and a fourth edge to be corrected, wherein the fourth edge to be corrected is parallel to the third edge to be corrected, and the correction influence factor of the third edge to be corrected is greater than or equal to the correction influence factor of the fourth edge to be corrected;

[0022] The correction directions of the first to-be-corrected edge and the second to-be-corrected edge are determined to be first preset correction directions, and the correction directions of the third to-be-corrected edge and the fourth to-be-corrected edge are determined to be second preset correction directions.

[0023] Further, the calculating the initial correction amount of the edge to be corrected based on the feature information includes:

[0024] Determining an initial correction amount of the first edge to be corrected according to the characteristic information of the first edge to be corrected, and the initial correction amount of the second edge to be corrected is equal to the initial correction amount of the first edge to be corrected;

[0025] An initial correction amount of the third side to be corrected is determined according to the characteristic information of the third side to be corrected, and the initial correction amount of the fourth side to be corrected is equal to the initial correction amount of the third side to be corrected.

[0026] Further, the calculating the initial correction amount of the edge to be corrected based on the feature information includes:

[0027] Determining a maximum allowable correction amount and a target correction amount of the edge to be corrected according to the characteristic information;

[0028] The minimum value between the maximum allowable correction amount and the target correction amount is determined as the initial correction amount of the edge to be corrected.

[0029] Furthermore, the initial correction amount β of the edge to be corrected is calculated as follows:

[0030]

[0031] Among them, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, W is the length of the edge to be corrected, and K is a constant related to the process conditions.

[0032] Furthermore, the method for obtaining the constant K related to the process conditions includes:

[0033] Obtaining a historical original through hole pattern layout and a historical revised through hole pattern layout;

[0034] Extracting characteristic information of at least one historical through-hole pattern in the historical original through-hole pattern layout, and calculating a historical correction amount of the historical through-hole pattern;

[0035] According to the characteristic information and the historical correction amount of each of the historical through-hole patterns, a constant value related to the process conditions corresponding to each of the historical through-hole patterns is calculated, and the constant K related to the process conditions is the average value of all the constant values ​​related to the process conditions.

[0036] The embodiment of the present application also provides a correction device for through-hole pattern layout, comprising:

[0037] An acquisition module is used to acquire an original through-hole pattern layout, wherein the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one side to be corrected; and is also used to acquire characteristic information of the side to be corrected of the through-hole pattern, wherein the characteristic information includes the length of the side to be corrected, and / or the spacing between the side to be corrected and an adjacent pattern, and / or the projection length of the side to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the side to be corrected along a target direction, and the target direction is perpendicular to the length direction of the side to be corrected;

[0038] A calculation module, used for calculating the correction direction and initial correction amount of the edge to be corrected according to the feature information of the edge to be corrected of the through-hole pattern transmitted by the acquisition module;

[0039] A generating module, configured to generate an initial corrected through-hole pattern layout based on the correction direction and initial correction amount of the edge to be corrected transmitted by the calculating module;

[0040] The correction module is used to re-correct the initial corrected through-hole pattern layout transmitted by the generation module, and output the corrected through-hole pattern layout after satisfying preset conditions through multiple optical proximity correction cyclic iterative calculations.

[0041] The embodiment of the present application further provides a computer-readable storage medium, which stores a computer program, and the computer program is suitable for being loaded by a processor to execute the above-mentioned method for correcting the through-hole pattern layout.

[0042] The correction method for the through-hole pattern layout provided in the present application first determines the initial correction amount and correction direction corresponding to each side to be corrected according to the characteristic information of each side to be corrected of the through-hole pattern, without the need to predict through an optical model, and then performs multiple cyclic iterative calculations of optical proximity correction with the initial correction amount as the initial value until convergence, so that the cyclic iterative calculation of the optical proximity correction does not start from the initial value of zero, thereby reducing the number of iterations and calculation time of the optical proximity correction, so as to improve the correction efficiency of the optical proximity correction, and can improve the problem of non-convergence. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0044] Figure 1 It is a schematic flow chart of a method for correcting a through-hole pattern layout provided in an embodiment of the present application;

[0045] Figure 2 is a schematic structural diagram of an original through-hole pattern layout provided in an embodiment of the present application;

[0046] Figure 3 is another schematic flow chart of a method for correcting a through hole pattern layout provided in an embodiment of the present application;

[0047] Figure 4 It is a schematic diagram of the structure of the historical original through-hole pattern layout provided in the embodiment of the present application;

[0048] Figure 5 It is a schematic diagram of the operation of performing the first movement of each to-be-corrected edge of the through-hole pattern provided in an embodiment of the present application;

[0049] Figure 6 A schematic diagram of the structure of a correction device for a through hole pattern layout provided in an embodiment of the present application. DETAILED DESCRIPTION

[0050] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0051] In the following description, the specific embodiments of the present application will be described with reference to the steps and symbols performed by one or more computers, unless otherwise specified. Therefore, these steps and operations will be mentioned several times as being performed by a computer, and the computer execution referred to herein includes the operation of a computer processing unit by an electronic signal representing data in a structured form. This operation converts the data or maintains it at a location in the memory system of the computer, which can be reconfigured or otherwise change the operation of the computer in a manner familiar to testers in the field. The data structure maintained by the data is a physical location in the memory, which has specific characteristics defined by the data format. However, the principles of the present application are described in the above text, which does not represent a limitation, and testers in the field will understand that the various steps and operations described below can also be implemented in hardware.

[0052] The terms "module" or "unit" used herein may be considered as software objects executed on the computing system. The different components, modules, engines and services described herein may be considered as implementation objects on the computing system. The devices and methods described herein are preferably implemented in software, but may also be implemented in hardware, all within the scope of protection of this application.

[0053] In the following description of the present application, reference is made to “some embodiments”, which describe a subset of all possible embodiments, but it can be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0054] In the following description of the present application, the terms "first\second\third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described here can be implemented in an order other than that illustrated or described here.

[0055] In addition, the directional terms mentioned in this application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present application, rather than to limit the present application. In each of the drawings, units with similar structures are represented by the same figure numbers. For clarity, the various parts in the drawings are not drawn to scale. In addition, certain well-known parts may not be shown in the drawings.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0057] The embodiment of the present application provides a method for correcting a through-hole pattern layout, first determining the initial correction amount and correction direction corresponding to each side to be corrected according to the characteristic information of each side to be corrected of the through-hole pattern, and then performing multiple optical proximity correction cyclic iterative calculations with the initial correction amount as the initial value until convergence. Compared with the related optical proximity correction method, in which the movement amount of each side of the through-hole pattern in the first cycle (i.e., the initial correction amount) is usually zero, the related optical proximity correction method often requires many cycles to converge, and even may not converge. The embodiment of the present application can not only reduce the number of convergence cycles and calculation time of the optical proximity correction to improve the correction efficiency of the optical proximity correction, but also improve the problem of conventional optical proximity correction methods not being able to converge when correcting through-hole patterns. Compared with the related method of presetting the initial correction parameters of each edge of the through-hole layer (including the correction direction and the correction amount value), the initial correction parameters of each edge of the through-hole layer need to be based on the simulation results of the lithography model or obtained from the actual measurement data, while the method of the embodiment of the present application, the initial correction amount and correction direction corresponding to each edge to be corrected of the through-hole pattern do not need to be predicted by the optical model; and the method of the embodiment of the present application can also be applied when the through-hole pattern layout is very complex, and the convergence accuracy is relatively high.

[0058] The following is a detailed description with reference to specific embodiments. It should be noted that the serial numbers of the following embodiments are not intended to limit the preferred order of the embodiments.

[0059] See also Figure 1 , Figure 1 It is a flow chart of a method for correcting a through-hole pattern layout provided in an embodiment of the present application. The method can be executed by a correction device for a through-hole pattern layout, and can be applied to a scenario where an optical proximity correction is performed on an original through-hole pattern layout (i.e., a through-hole pattern layout that needs to correct an optical proximity effect). Based on the characteristic information of each edge of the through-hole pattern in the original through-hole pattern layout (e.g., the length of the edge, and / or the spacing between the edge and its adjacent pattern, and / or the projection length of the edge on its adjacent pattern, etc.), the correction direction and initial correction amount of each edge of the through-hole pattern are calculated, and based on the correction direction and initial correction amount of each edge of the through-hole pattern, multiple optical proximity correction loops and iterative calculations are performed until convergence to obtain a corrected through-hole pattern layout (i.e., a through-hole pattern layout after correcting the optical proximity effect). The corrected through-hole pattern layout can be used to make a corresponding mask, and the through-hole pattern in the corrected through-hole pattern layout is consistent with the through-hole pattern on the corresponding mask. The specific process of the method can be as follows:

[0060] S101. Obtain an original through-hole pattern layout, wherein the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one edge to be corrected.

[0061] In this embodiment, the number of through-hole patterns included in the above-mentioned original through-hole pattern layout can be multiple. Specifically, the multiple through-hole patterns can have the same shape, for example, they can all be square holes (i.e., rectangular holes or square holes). Further, the multiple through-hole patterns can also have the same or substantially the same size, that is, the multiple through-hole patterns can be exactly the same, or can be substantially the same.

[0062] Specifically, in the embodiment in which the through hole pattern in the above original through hole pattern layout is a square hole, one through hole pattern may have four sides to be corrected, and each side to be corrected may be a side of the square hole.

[0063] And, for ease of understanding, the following Figure 2 The original through hole pattern layout 20 shown in FIG. Figure 2 As shown, the original through hole pattern layout 20 includes three through hole patterns (ie, through hole pattern 21, through hole pattern 22 and through hole pattern 23), wherein the through hole pattern 21, the through hole pattern 22 and the through hole pattern 23 respectively have four edges to be corrected.

[0064] S102. Obtain characteristic information of the edge to be corrected of the through-hole pattern, calculate the correction direction and initial correction amount of the edge to be corrected, the characteristic information includes the length of the edge to be corrected, and / or the spacing between the edge to be corrected and an adjacent pattern, and / or the projection length of the edge to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the edge to be corrected along a target direction, and the target direction is perpendicular to the length direction of the edge to be corrected.

[0065] Among them, for each edge to be corrected, the adjacent graphics of the edge to be corrected refer to: in the original through-hole pattern layout, along the direction perpendicular to the edge to be corrected (i.e., the target direction), the graphics adjacent to the through-hole graphics to which the edge to be corrected belongs; and the adjacent graphics of the edge to be corrected can specifically be: other through-hole graphics in the original through-hole pattern layout except the through-hole graphics to which the edge to be corrected belongs.

[0066] Specifically, for each edge to be corrected, when the edge to be corrected has adjacent graphics, the number of adjacent graphics of the edge to be corrected may be one or more, and, when the number of adjacent graphics of the edge to be corrected is multiple, the spacing between the edge to be corrected and the adjacent graphics may include the spacing between the edge to be corrected and each of its adjacent graphics, the projection length of the edge to be corrected on the adjacent graphics may include the projection length of the edge to be corrected on each of its adjacent graphics, and the projection length of the edge to be corrected on each of its adjacent graphics may refer to: the length of the positive projection of the edge to be corrected on the edge of each of its adjacent graphics parallel to it.

[0067] In some embodiments, Figure 3 As shown, the above S102 may include:

[0068] S1021. Obtain feature information of each edge to be corrected, and calculate a correction impact factor of each edge to be corrected.

[0069] Specifically, for each to-be-corrected edge of the through-hole pattern in the original through-hole pattern layout, the smaller the correction influence factor of the to-be-corrected edge is, the smaller the influence of the adjacent pattern on the to-be-corrected edge is.

[0070] Moreover, the inventors of the present application have discovered during long-term research and development that, for each side to be corrected of the through-hole pattern in the original through-hole pattern layout, the longer the length of the side to be corrected, the smaller the influence of the adjacent pattern on the side to be corrected; the larger the spacing between the side to be corrected and the adjacent pattern, the smaller the influence of the adjacent pattern on the side to be corrected; and the longer the projection length of the side to be corrected on the adjacent pattern, the greater the influence of the adjacent pattern on the side to be corrected.

[0071] Therefore, in a specific implementation, for each side to be corrected of the through-hole pattern in the original through-hole pattern layout, the characteristic information of the side to be corrected may include the length of the side to be corrected, the spacing between the side to be corrected and the adjacent pattern, and the projection length of the side to be corrected on the adjacent pattern. In addition, the correction impact factor of each side to be corrected may be calculated based on the length of each side to be corrected, the spacing between each side to be corrected and the adjacent pattern, and the projection length of each side to be corrected on the adjacent pattern.

[0072] In some specific embodiments, for each to-be-corrected edge of the through-hole pattern in the original through-hole pattern layout, the correction impact factor of the to-be-corrected edge can be calculated according to calculation formula 1, where calculation formula 1 is as follows:

[0073]

[0074] Among them, α is the correction influence factor of the edge to be corrected, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected (i.e., adjacent graphics), Ln is the projection length of the edge to be corrected on the nth adjacent graphics, Sn is the spacing between the edge to be corrected and the nth adjacent graphics, and W is the length of the edge to be corrected.

[0075] And, for ease of understanding, the following Figure 2 The original through hole pattern layout 20 shown in FIG. Figure 2As shown, the original through-hole pattern layout 20 includes three through-hole patterns (i.e., through-hole pattern 21, through-hole pattern 22, and through-hole pattern 23), wherein through-hole pattern 21 and through-hole pattern 22 are patterns adjacent to the side 231 to be corrected of the through-hole pattern 23. Accordingly, the correction influence factor of the side 231 to be corrected can be expressed as: Among them, L1 is the projection length of the edge 231 to be corrected on the through-hole pattern 21, L2 is the projection length of the edge 231 to be corrected on the through-hole pattern 22, S1 is the spacing between the edge 231 to be corrected and the through-hole pattern 21, S2 is the spacing between the edge 231 to be corrected and the through-hole pattern 22, and W is the length of the edge 231 to be corrected.

[0076] S1022. Determine the correction direction of each edge to be corrected according to the correction influence factor of each edge to be corrected.

[0077] Specifically, for each to-be-corrected edge of the through-hole pattern in the original through-hole pattern layout, the correction direction of the to-be-corrected edge can be perpendicular to the length direction of the corrected edge, and can be a direction from the inside of the through-hole pattern to which the to-be-corrected edge belongs to pointing to the outside of the through-hole pattern to which the to-be-corrected edge belongs, or can be a direction from the outside of the through-hole pattern to which the to-be-corrected edge belongs to pointing to the inside of the through-hole pattern to which the to-be-corrected edge belongs.

[0078] In this embodiment, the through hole pattern in the original through hole pattern layout may be a square hole, and its cross section may be a square or a rectangle (i.e., a rectangle), and the four sides of the square or rectangle may be four sides to be corrected. In addition, the above S1022 may include:

[0079] S1-1. Determine the first edge to be corrected with the smallest correction influence factor from the four edges to be corrected, the second edge to be corrected parallel to the first edge to be corrected, and the third and fourth edges to be corrected, wherein the fourth edge to be corrected is parallel to the third edge to be corrected, and the correction influence factor of the third edge to be corrected is greater than or equal to the correction influence factor of the fourth edge to be corrected.

[0080] Among them, the number of the first edges to be corrected is one. Moreover, when there are multiple (i.e., two or more) edges to be corrected with the smallest correction impact factor among the four edges to be corrected of the through-hole pattern, one edge to be corrected with the smallest correction impact factor can be randomly or according to a preset rule selected from the multiple edges to be corrected with the smallest correction impact factor as the first edge to be corrected.

[0081] S1-2. Determine that the correction directions of the first side to be corrected and the second side to be corrected are the first preset correction directions, and the correction directions of the third side to be corrected and the fourth side to be corrected are the second preset correction directions.

[0082] The first preset correction direction may be a direction perpendicular to the edge to be corrected and pointing from the inside of the through-hole pattern to which the edge to be corrected belongs to to the outside of the through-hole pattern to which the edge to be corrected belongs. The second preset correction direction may be a direction perpendicular to the edge to be corrected and pointing from the outside of the through-hole pattern to which the edge to be corrected belongs to to the inside of the through-hole pattern to which the edge to be corrected belongs.

[0083] Specifically, the first edge to be corrected and the third edge to be corrected are two adjacent edges to be corrected of the through hole pattern. The correction direction of the first edge to be corrected and the second edge to be corrected can be determined as the first preset correction direction, and the correction direction of the third edge to be corrected and the fourth edge to be corrected can be determined as the second preset correction direction, thereby obtaining the correction directions of all edges to be corrected of the through hole pattern.

[0084] S1023. Calculate the initial correction amount of the edge to be corrected based on the feature information.

[0085] Specifically, the inventors of the present application discovered during long-term research and development that, in order to correct the optical proximity effect, the longer the edge to be corrected is, the greater the correction amount required, and the longer the projection length of the edge to be corrected on the adjacent figure is, the smaller the correction amount required.

[0086] Therefore, in a specific implementation, the characteristic information of the side to be corrected may at least include the length of the side to be corrected and the projection length of the side to be corrected on the adjacent graph. Furthermore, the initial correction amount of the side to be corrected may be calculated based on the length of the side to be corrected and the projection length of the side to be corrected on the adjacent graph.

[0087] In some specific embodiments, the initial correction amount of the edge to be corrected can be calculated according to calculation formula 2, where calculation formula 2 can be as follows:

[0088]

[0089] Wherein, β initial is the initial correction amount of the edge to be corrected, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, W is the length of the edge to be corrected, K is a constant related to the process conditions, and the specific value of K can be determined according to the actual process conditions of the lithography process of the semiconductor production line.

[0090] And, for ease of understanding, the following Figure 2 The original through hole pattern layout 20 shown in FIG. Figure 2 As shown, the original through-hole pattern layout 20 includes three through-hole patterns (i.e., through-hole pattern 21, through-hole pattern 22, and through-hole pattern 23), wherein through-hole pattern 21 and through-hole pattern 22 are patterns adjacent to the side 231 to be corrected of the through-hole pattern 23. Accordingly, the initial correction amount of the side 231 to be corrected can be expressed as: Wherein, L1 is the projection length of the edge 231 to be corrected on the through-hole pattern 21, L2 is the projection length of the edge 231 to be corrected on the through-hole pattern 22, W is the length of the edge 231 to be corrected, and K is a constant related to the process conditions.

[0091] In some other specific embodiments, the above S1023 may include:

[0092] S2-1. Based on the feature information, calculate the maximum allowable correction amount and target correction amount of the edge to be corrected.

[0093] Specifically, the above S2-1 may include:

[0094] S2-1-1. Calculate the maximum allowable correction amount of the side to be corrected based on the length of the side to be corrected.

[0095] Specifically, the inventors of the present application have discovered during long-term research and development that the longer the edge to be corrected is, the greater the maximum correction amount allowed can be.

[0096] Therefore, in specific implementation, the maximum allowable correction amount of the edge to be corrected can be calculated according to the following formula:

[0097] βmax=a*W;

[0098] Among them, βmax is the maximum allowable correction amount of the edge to be corrected, W is the length of the edge to be corrected, and a is a numerical parameter. a is greater than zero and less than 1, for example, it can be 0.2. The specific value of a is known to those skilled in the art and will not be repeated here.

[0099] S2-1-2. Determine the target correction amount of the side to be corrected based on the length of the side to be corrected and the projection length of the side to be corrected on the adjacent figure.

[0100] Specifically, the target correction amount of the edge to be corrected can be calculated according to the following formula:

[0101]

[0102] Among them, βx is the target correction amount of the edge to be corrected, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, W is the length of the edge to be corrected, K is a constant related to the process conditions, and the specific value of K can be determined according to the actual process conditions of the lithography process of the semiconductor production line.

[0103] S2-2. Determine the minimum value between the maximum allowable correction amount and the target correction amount as the initial correction amount of the side to be corrected.

[0104] Specifically, the initial correction amount of the edge to be corrected can be calculated according to calculation formula 3, where calculation formula 3 is as follows:

[0105]

[0106] Wherein, βinitial is the initial correction amount of the edge to be corrected, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, W is the length of the edge to be corrected, K is a constant related to the process conditions, and the specific value of K can be determined according to the actual process conditions of the lithography process of the semiconductor production line, 0.2*W (that is, βmax) is the maximum allowable correction amount of the edge to be corrected, (That is, βx) is the target correction amount for the edge to be corrected.

[0107] And, for ease of understanding, the following Figure 2 The original through hole pattern layout 20 shown in FIG. Figure 2 As shown, the original through-hole pattern layout 20 includes three through-hole patterns (i.e., through-hole pattern 21, through-hole pattern 22, and through-hole pattern 23), wherein through-hole pattern 21 and through-hole pattern 22 are patterns adjacent to the side 231 to be corrected of the through-hole pattern 23. Accordingly, the initial correction amount of the side 231 to be corrected can be expressed as: Among them, L1 is the projection length of the edge 231 to be corrected on the through-hole pattern 21, L2 is the projection length of the edge 231 to be corrected on the through-hole pattern 22, W is the length of the edge 231 to be corrected, K is a constant related to the process conditions, and the specific value of K can be determined according to the actual process conditions of the lithography process of the semiconductor production line.

[0108] Furthermore, it should be noted that, compared with the solution of calculating the initial correction amount of the edge to be corrected by using the above calculation formula 2, the solution of calculating the initial correction amount of the edge to be corrected by using the above calculation formula 3 in this embodiment takes into account the situation that the initial correction amount of the edge to be corrected cannot be greater than the maximum allowable correction amount of the edge to be corrected, thereby ensuring the rationality of the initial correction amount, so as to further reduce the number of convergence cycles and calculation time of the optical proximity correction, and improve the correction efficiency of the optical proximity correction.

[0109] Specifically, in the above embodiment where the above S1022 includes the above S1-1 and the above S1-2, the above S1023 may include:

[0110] S3-1. Determine an initial correction amount of the first side to be corrected according to the characteristic information of the first side to be corrected, and the initial correction amount of the second side to be corrected is equal to the initial correction amount of the first side to be corrected.

[0111] S3-2. Determine an initial correction amount of the third side to be corrected according to the characteristic information of the third side to be corrected, and the initial correction amount of the fourth side to be corrected is equal to the initial correction amount of the third side to be corrected.

[0112] The initial correction amount of the first side to be corrected and the initial correction amount of the third side to be corrected can be calculated according to the above calculation formula 2 or the above calculation formula 3.

[0113] Moreover, in a specific implementation, the first side to be corrected and the third side to be corrected are two adjacent sides to be corrected of the through-hole pattern, and the initial correction amounts of the first side to be corrected and the third side to be corrected can be calculated respectively according to preset calculation formulas (for example, the above calculation formula 2 or the above calculation formula 3), and the initial correction amount of the second side to be corrected is set equal to the initial correction amount of the first side to be corrected, and the initial correction amount of the fourth side to be corrected is set equal to the initial correction amount of the third side to be corrected, so as to obtain the initial correction amounts of all sides to be corrected of the through-hole pattern.

[0114] Furthermore, it should be noted that the constant K related to the process conditions involved in the calculation formula (e.g., the above calculation formula 2 or the above calculation formula 3) for calculating the initial correction amount in this embodiment may be a constant related to the actual process conditions of the photolithography process of the semiconductor production line. The photolithography process may include an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light is irradiated onto a substrate (e.g., a wafer or a silicon wafer) coated with a photoresist through a light-transmitting area in the mask, and the photoresist undergoes a chemical reaction under the irradiation of light; in the development step, a photolithography pattern is formed by utilizing the different degrees of solubility of the photosensitive and non-photosensitive photoresists in the developer, so as to realize the transfer of the mask pattern to the photoresist; in the etching step, the substrate is etched based on the photolithography pattern formed by the photoresist layer, and the mask pattern is further transferred to the substrate.

[0115] In some embodiments, in order to obtain the constant K related to the process conditions, the method for correcting the through hole pattern layout may further include:

[0116] Step A: Obtain a historical original through hole pattern layout and a historical revised through hole pattern layout.

[0117] The historical modified via pattern layout may be obtained by correcting the optical proximity effect of the historical original via pattern layout.

[0118] Specifically, the method for correcting the optical proximity effect of the historical original through-hole pattern layout may include a model-based optical proximity correction method.

[0119] In some examples, the model-based optical proximity correction method may include: first, the edges of the design graphics are identified through the correction software of the optical proximity effect, so that each edge can move freely, and then the correction software calculates the exposed graphics and compares the exposed graphics with the design graphics to obtain the difference between the exposed graphics and the design graphics (i.e., the edge placement error EPE). The edge placement error is an indicator used to measure the quality of the correction. The smaller the edge placement error, the more similar the exposed graphics are to the design graphics. The correction software moves the edge position of the design graphics at runtime and calculates the corresponding edge placement error. This process is repeated until the calculated edge placement error EPE reaches an acceptable value.

[0120] In some specific examples, the model-based optical proximity correction method may specifically include: first, cutting each edge of the design figure into different line segments according to certain rules, and then placing evaluation points for calculating edge placement errors in each line segment, and cyclically moving each line segment so that the sum of the squares of the edge placement errors (EPE) of each evaluation point of the design figure converges to a certain threshold or the number of cycles reaches a set upper limit, then the correction cycle ends.

[0121] Furthermore, it should be noted that in order to ensure that the obtained historical original through-hole pattern layout and the historical revised through-hole pattern layout can more accurately reflect the actual process conditions of the lithography process of the semiconductor production line, the above-mentioned historical revised through-hole pattern layout should satisfy: the actual process conditions of the lithography process of the semiconductor production line to which it is applicable are consistent with the actual process conditions of the lithography process of the semiconductor production line to which the revised through-hole pattern layout corresponding to the original through-hole pattern layout is applicable.

[0122] Step B: extracting feature information of at least one historical through-hole pattern in the historical original through-hole pattern layout, and calculating the historical correction amount of the historical through-hole pattern.

[0123] In this embodiment, the number of the above-mentioned historical original through hole pattern layouts may be one or more, and the number of the above-mentioned historical revised through hole pattern layouts is equal to the number of the above-mentioned historical original through hole pattern layouts. In addition, the historical original through hole pattern layouts and the historical revised through hole pattern layouts may correspond one to one, and each historical revised through hole pattern layout may be obtained by correcting the optical proximity effect of the corresponding historical original through hole pattern layout.

[0124] Specifically, for each historical original through-hole pattern layout, the historical original through-hole pattern layout may include at least one through-hole pattern, and each through-hole pattern in the historical original through-hole pattern layout may include at least one edge to be corrected; accordingly, the historical corrected through-hole pattern layout corresponding to the historical original through-hole pattern layout may include at least one corrected through-hole pattern, and each corrected through-hole pattern may include at least one corrected edge; and the through-hole pattern in the historical original through-hole pattern layout may correspond one-to-one with the corrected through-hole pattern in the corresponding historical corrected through-hole pattern layout, and the edge to be corrected of the through-hole pattern in the historical original through-hole pattern layout may correspond one-to-one with the corrected edge of the corrected through-hole pattern in the corresponding historical corrected through-hole pattern layout.

[0125] Furthermore, it should be noted that, in order to distinguish the through-hole pattern in the above-mentioned original through-hole pattern layout from the through-hole pattern in the above-mentioned historical original through-hole pattern layout, the through-hole pattern in the above-mentioned historical original through-hole pattern layout is referred to as the historical through-hole pattern, the to-be-corrected edge of the through-hole pattern in the above-mentioned historical original through-hole pattern layout is the historical to-be-corrected edge, and the corrected through-hole pattern is obtained by correcting the optical proximity effect of the corresponding historical through-hole pattern, and the corrected edge is obtained by correcting the optical proximity effect of the corresponding historical to-be-corrected edge.

[0126] Taking the historical through hole pattern as a square hole as an example, the cross-section of the historical through hole pattern can be a square or a rectangle (i.e., a rectangle), and the four sides of the square or rectangle can be four historical sides to be corrected, that is, the above historical through hole pattern has four historical sides to be corrected.

[0127] Specifically, the characteristic information of the historical through-hole pattern may include characteristic information of at least one historical edge to be corrected of the historical through-hole pattern.

[0128] Furthermore, for each historical edge to be corrected of the historical through-hole graphic, the characteristic information of the historical edge to be corrected may include the length of the historical edge to be corrected, and / or the spacing between the historical edge to be corrected and the historical adjacent graphic, and / or the projection length of the historical edge to be corrected on the historical adjacent graphic, wherein the historical adjacent graphic is a graphic in the historical original through-hole graphic layout that is adjacent to the historical edge to be corrected along the historical target direction, and the historical target direction is perpendicular to the length direction of the historical edge to be corrected.

[0129] Furthermore, during specific implementation, the method for obtaining the characteristic information of the historical to-be-corrected edges of the historical through-hole graphics in the above-mentioned historical original through-hole graphics layout, that is, the specific implementation method for extracting the characteristic information of at least one historical through-hole graphics in the historical original through-hole graphics layout, can refer to the specific implementation method for obtaining the characteristic information of the to-be-corrected edges of the through-hole graphics in the above-mentioned original through-hole graphics layout, and it is only necessary to replace the original through-hole graphics layout in the specific implementation method for obtaining the characteristic information of the to-be-corrected edges of the through-hole graphics in the above-mentioned original through-hole graphics layout with the historical original through-hole graphics layout, replace the through-hole graphics with the historical through-hole graphics, replace the to-be-corrected edges with the historical to-be-corrected edges, replace the adjacent graphics with the historical adjacent graphics, and replace the target direction with the historical target direction, so as to obtain the specific implementation method for extracting the characteristic information of at least one historical through-hole graphics in the historical original through-hole graphics layout, so it will not be repeated here.

[0130] Specifically, the historical correction amount of the historical through-hole pattern may include the historical correction amount of at least one historical side to be corrected of the historical through-hole pattern.

[0131] Furthermore, for each historical edge to be corrected of the historical through-hole pattern in the historical original through-hole pattern layout, a method for obtaining the historical correction amount of the historical edge to be corrected may include: obtaining the position coordinates of the historical edge to be corrected in the historical original through-hole pattern layout, and the position coordinates of the corrected edge corresponding to the historical edge to be corrected in the corresponding historical corrected through-hole pattern layout, calculating the movement amount between the two, and using the movement amount as the historical correction amount of the historical edge to be corrected.

[0132] The historical original through-hole pattern layout and its corresponding historical revised through-hole pattern layout may have independent coordinate systems, and the coordinate systems of the two may be constructed in the same way. For example, for a rectangular historical original through-hole pattern layout and its corresponding historical revised through-hole pattern layout, the coordinate system of the corresponding image may be constructed by taking the upper right corner of the corresponding rectangle as the origin coordinate, the horizontal line where the upper boundary is located as the X-axis, and the vertical line where the right boundary is located as the Y-axis.

[0133] Step C: Calculate the constant value related to the process conditions corresponding to each historical through-hole pattern according to the characteristic information and historical correction amount of each historical through-hole pattern, and the constant K related to the process conditions is the average value of all constant values ​​related to the process conditions.

[0134] The constant value associated with the process conditions corresponding to each historical through-hole pattern may include the constant values ​​associated with the process conditions corresponding to all historical edges to be corrected of the historical through-hole pattern.

[0135] Specifically, for each historical through-hole graphic, the constant value related to the process conditions corresponding to each historical edge to be corrected of the historical through-hole graphic can be calculated based on the characteristic information and historical correction amount of each historical edge to be corrected of the historical through-hole graphic, so as to obtain the constant value related to the process conditions corresponding to the historical through-hole graphic.

[0136] Furthermore, the constant K related to the process conditions may be an average value of the constant values ​​related to the process conditions corresponding to all historical edges to be corrected of all historical through-hole patterns.

[0137] Specifically, in the above embodiment in which the initial correction amount of the edge to be corrected is calculated according to the above calculation formula 2, for each historical through-hole pattern, the constant value related to the process conditions corresponding to each historical edge to be corrected of the historical through-hole pattern can be calculated according to calculation formula 4, wherein calculation formula 4 can be as follows:

[0138]

[0139] Among them, β1' is the historical correction amount of the historical edge to be corrected, m is the number of graphics adjacent to the historical edge to be corrected in the length direction perpendicular to the historical edge to be corrected, Lm is the projection length of the historical edge to be corrected on the mth adjacent graphic, W' is the length of the historical edge to be corrected, and K' is the constant value related to the process conditions corresponding to the historical edge to be corrected.

[0140] Moreover, it can be seen from the above calculation formula 4 that when the characteristic information of each historical edge to be corrected (i.e., W' and L1', L2', ..., Lm') and the historical correction amount (i.e., β1') are known, the above calculation formula 4 can be used to calculate the constant value K' related to the process conditions corresponding to each historical edge to be corrected.

[0141] Specifically, in the above embodiment in which the initial correction amount of the edge to be corrected is calculated according to the above calculation formula 3, for each historical through-hole pattern, the constant value related to the process conditions corresponding to each historical edge to be corrected of the historical through-hole pattern can be calculated according to calculation formula 5, wherein calculation formula 5 can be as follows:

[0142]

[0143] Among them, β2' is the historical correction amount of the historical edge to be corrected, m is the number of graphics adjacent to the historical edge to be corrected in the length direction perpendicular to the historical edge to be corrected, Lm is the projection length of the historical edge to be corrected on the mth adjacent graphic, W' is the length of the historical edge to be corrected, and K' is the constant value related to the process conditions corresponding to the historical edge to be corrected.

[0144] Furthermore, it can be seen from the above calculation formula 5 that when the characteristic information (i.e., W' and L1', L2', ..., Lm') and the historical correction amount (i.e., β') of each historical edge to be corrected are known, and the historical correction amount of each historical edge to be corrected is not equal to the maximum allowable correction amount of each historical edge to be corrected, the above calculation formula 5 can be used to calculate the constant value K' related to the process conditions corresponding to each historical edge to be corrected.

[0145] And, for ease of understanding, the following Figure 4 The historical original through hole pattern layout 30 shown in FIG. Figure 4 As shown, the historical original through-hole pattern layout 30 includes three historical through-hole patterns (i.e., historical through-hole pattern 31, historical through-hole pattern 32, and historical through-hole pattern 33), wherein the historical through-hole pattern 31 and the historical through-hole pattern 32 are patterns adjacent to the side to be corrected 331 of the historical through-hole pattern 33. Accordingly, when the historical correction amount (i.e., β1' or β2') of the historical side to be corrected 331 is 5, the length (i.e., W') is 100nm, and the projection lengths on the two adjacent patterns (i.e., L1' and L2') are 20nm and 30nm respectively, based on the above calculation formula 4 or the above calculation formula 5, it can be calculated that K' is equal to 2.5.

[0146] S103. Generate an initial corrected through-hole pattern layout based on the correction direction and initial correction amount of the edge to be corrected.

[0147] Specifically, after obtaining the correction direction and initial correction amount of all the to-be-corrected edges of each through-hole pattern in the above-mentioned original through-hole pattern layout, each to-be-corrected edge of each through-hole pattern in the above-mentioned original through-hole pattern layout can be moved for the first time, and in the first movement process of each to-be-corrected edge, the movement direction of each to-be-corrected edge is its correction direction, and the movement amount of each to-be-corrected edge is its initial correction amount, thereby realizing the cyclic iteration of the first optical proximity correction of each through-hole pattern in the above-mentioned original through-hole pattern layout, and obtaining the initial corrected through-hole pattern layout.

[0148] And, for ease of understanding, the following Figure 5 The through hole pattern efgh in the original through hole pattern layout shown in FIG. Figure 5As shown, the through-hole pattern efgh has four edges to be corrected (i.e., edge ef, edge fg, edge gh, and edge he). Among them, the correction direction of edge he is the same as that of edge fg, both of which are the first preset correction direction A1 (i.e., the direction from the inside of the through-hole pattern efgh to the outside of the through-hole pattern efgh); the correction direction of edge ef is the same as that of edge gh, both of which are the second preset correction direction A2 (i.e., the direction from the outside of the through-hole pattern efgh to the inside of the through-hole pattern efgh). Moreover, the initial correction amount of edge he is the same as the initial correction amount of edge fg, both of which are d1; the initial correction amount of edge ef is the same as the initial correction amount of edge gh, both of which are d2. Accordingly, after the first movement of each edge of the through-hole pattern efgh, a through-hole pattern e'f'g'h' (i.e., a through-hole pattern e'f'g'h' after the first cyclic iteration of the optical proximity correction) can be generated.

[0149] S104. The initial corrected through-hole pattern layout is corrected again, and after multiple optical proximity correction iterative calculations are performed to meet preset conditions, the corrected through-hole pattern layout is output.

[0150] Specifically, the above S104 may include:

[0151] S1041. Calculate edge placement error based on the initial corrected through-hole pattern layout.

[0152] S1042. When the edge placement error meets a preset condition, the initial corrected via pattern layout is used as the corrected via pattern layout.

[0153] S1043. When the edge placement error does not meet the preset condition, each side to be corrected of each through-hole pattern in the above-mentioned original through-hole pattern layout is moved for the next time according to the edge placement error to update the initial corrected through-hole pattern layout, and then return to execute the above-mentioned S1041.

[0154] Among them, the edge placement error is an indicator used to measure the quality of correction. The smaller the edge placement error, the more similar the exposed graphic is to the design graphic. In some examples, the above-mentioned preset conditions may include: the edge placement error is within a preset threshold range, wherein the preset threshold range may be determined by the actual required correction accuracy. In other examples, the above-mentioned preset conditions may include: the sum of the squares of the edge placement errors is less than a preset threshold, wherein the preset threshold may be determined by the actual required correction accuracy.

[0155] Furthermore, each movement of each to-be-corrected edge of each through-hole pattern in the original through-hole pattern layout corresponds to a cyclic iteration of the optical proximity correction.

[0156] Specifically, after each to-be-corrected edge of each through-hole pattern in the above-mentioned original through-hole pattern layout is moved at least once (i.e., k-th optical proximity correction loop iteration is performed), and before each to-be-corrected edge of each through-hole pattern in the above-mentioned original through-hole pattern layout is moved for the next time (i.e., (k+1)-th optical proximity correction loop iteration is performed), if the calculated edge placement error satisfies the above-mentioned preset condition, it means that the result of the k-th optical proximity correction loop iteration can meet the correction accuracy requirement, so that the optical proximity correction loop iteration can be stopped, and the result of the k-th optical proximity correction loop iteration can be output as a corrected through-hole pattern layout.

[0157] Further, after performing k-th optical proximity correction iterations and before performing the (k+1)-th optical proximity correction iterations, if the calculated edge placement error does not meet the above preset conditions, it means that the result of the k-th optical proximity correction iterations is significantly different from the exposed pattern. Therefore, it is necessary to increase the number of optical proximity correction iterations (for example, perform the (k+1)-th optical proximity correction iterations) to update the result of the k-th optical proximity correction iteration (i.e., the initial corrected via pattern layout) to improve the accuracy of correcting the original via pattern layout by the optical proximity correction method.

[0158] It is understandable that the above S1041 and S1042 can constitute a loop, and each time the loop is repeated, the number of loop iterations of the corresponding optical proximity correction will increase once, and once the calculated edge placement error can meet the requirement (that is, the above preset condition is satisfied), the loop will stop. In some embodiments, an upper limit value of the number of loop iterations of the optical proximity correction can also be preset, so that when the number of loop iterations of the optical proximity correction reaches the upper limit value, even if the calculated edge placement error still cannot meet the requirement, the loop can be stopped (that is, the loop will be forced to stop when the number of loop iterations of the optical proximity correction reaches the upper limit value).

[0159] In some specific embodiments, the calculation of the edge placement error based on the initial correction through-hole pattern layout may include: using an optical model and a photoresist photochemical reaction model to calculate the initial simulation pattern after exposure corresponding to each through-hole pattern in the initial correction through-hole pattern layout, and then comparing each through-hole pattern in the initial correction through-hole pattern layout with the corresponding initial simulation pattern after exposure, and the difference between each through-hole pattern in the initial correction through-hole pattern layout and the corresponding initial simulation pattern after exposure is the edge placement error. The edge placement error is an indicator used to measure the correction quality. The smaller the edge placement error, the closer the exposed pattern is to the through-hole pattern in the initial correction through-hole pattern layout.

[0160] Furthermore, it should be noted that, in the present embodiment, the correction direction of each edge of the through-hole pattern is pre-determined according to the distribution of patterns around the through-hole pattern, and the initial correction amount of each edge of the through-hole pattern is given, thereby achieving an initial movement amount and movement direction for each edge according to the characteristic information of each edge before the first cyclic iteration of the optical proximity correction, and the initial movement amount and movement direction depend on the length of each edge, the spacing between each edge and the adjacent pattern, and the projection length of each edge on the adjacent pattern, and do not need to be predicted by an optical model, thereby reducing the number of convergence cycles and the calculation time, effectively shortening the time of the optical proximity correction, and helping to avoid the situation where convergence cannot occur.

[0161] In some embodiments, after the above S104, that is, after obtaining the above-mentioned corrected through hole pattern layout, the correction method of the above-mentioned through hole pattern layout may further include: transferring the through hole pattern in the corrected through hole pattern layout to a mask plate to form a mask plate pattern.

[0162] Furthermore, after forming the above-mentioned mask pattern, the above-mentioned method for correcting the through-hole pattern layout may further include: transferring the mask pattern to a wafer to form a final pattern.

[0163] In some embodiments, after obtaining the above-mentioned corrected through-hole pattern layout, the correction method of the above-mentioned through-hole pattern layout may also include: reversely deriving more accurate constants related to process conditions based on the corrected through-hole pattern layout, and saving them for use when correcting the optical proximity effect of other original through-hole pattern layouts, so as to further improve the accuracy and effect of the correction.

[0164] Specifically, after obtaining the above-mentioned corrected through-hole pattern layout, the constant K related to the process conditions in the above-mentioned calculation formula (for example, calculation formula 2 and calculation formula 3) can be updated based on the actual correction amount (i.e., actual movement amount) of the to-be-corrected edge of the through-hole pattern in the above-mentioned original through-hole pattern layout and the characteristic information.

[0165] As can be seen from the above, the correction method for the through-hole pattern layout provided in the present embodiment first determines the initial correction amount and correction direction corresponding to each side to be corrected according to the characteristic information of each side to be corrected of the through-hole pattern, without the need to predict through the optical model, and then performs multiple cyclic iterative calculations of the optical proximity correction with the initial correction amount as the initial value until convergence, so that the cyclic iterative calculation of the optical proximity correction does not start from the initial value of zero, thereby being able to reduce the number of iterations and calculation time of the optical proximity correction, so as to improve the correction efficiency of the optical proximity correction, and to improve the problem of non-convergence.

[0166] Based on the method described in the above embodiment, this embodiment will be further described from the perspective of the correction device for the through hole pattern layout to implement the method described in the above embodiment. Figure 6 , Figure 6 The correction device for the through hole pattern layout provided by the embodiment of the present application is specifically described. Figure 6 , Figure 6 The correction device for the through-hole pattern layout provided by the embodiment of the present application is specifically described, and the correction device for the through-hole pattern layout includes: an acquisition module 401, a calculation module 402, a generation module 403 and a correction module 404, wherein the acquisition module 401 is connected in communication with the calculation module 402, the calculation module 402 is connected in communication with the generation module 403, and the generation module 403 is connected in communication with the correction module 404. Among them:

[0167] (1) Get module 401

[0168] The acquisition module 401 is used to acquire an original through-hole pattern layout, wherein the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one edge to be corrected; and is also used to acquire characteristic information of the edge to be corrected of the through-hole pattern, wherein the characteristic information includes the length of the edge to be corrected, and / or the spacing between the edge to be corrected and an adjacent pattern, and / or the projection length of the edge to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the edge to be corrected along a target direction, and the target direction is perpendicular to the length direction of the edge to be corrected.

[0169] (2) Calculation module 402

[0170] The calculation module 402 is used to calculate the correction direction and initial correction amount of the edge to be corrected based on the feature information of the edge to be corrected of the through-hole pattern transmitted by the acquisition module 401.

[0171] In some embodiments, the calculation module 402 includes:

[0172] A first calculation unit, configured to calculate a correction influence factor of each edge to be corrected based on the feature information of each edge to be corrected transmitted by the acquisition module 401;

[0173] A determination unit, used to determine a correction direction of each edge to be corrected according to a correction influence factor of each edge to be corrected;

[0174] The second calculation unit is used to calculate the initial correction amount of the edge to be corrected based on the feature information.

[0175] In some specific embodiments, the correction influence factor α of the edge to be corrected may be calculated as follows:

[0176]

[0177] Among them, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, Sn is the spacing between the edge to be corrected and the nth adjacent graphic, and W is the length of the edge to be corrected.

[0178] In some specific embodiments, the through hole pattern in the original through hole pattern layout may be a square hole with a square or rectangular cross section, and the four sides of the square or rectangle are the four sides to be corrected. In addition, the determination unit may be specifically used to:

[0179] Determine, from the four edges to be corrected, a first edge to be corrected with the smallest correction influence factor, a second edge to be corrected parallel to the first edge to be corrected, a third edge to be corrected, and a fourth edge to be corrected parallel to the third edge to be corrected, wherein the correction influence factor of the third edge to be corrected is greater than or equal to the correction influence factor of the fourth edge to be corrected;

[0180] The correction directions of the first side to be corrected and the second side to be corrected are determined to be the first preset correction directions, and the correction directions of the third side to be corrected and the fourth side to be corrected are determined to be the second preset correction directions.

[0181] Accordingly, the second calculation unit may be specifically used for:

[0182] Determine an initial correction amount of the first side to be corrected according to the characteristic information of the first side to be corrected, and the initial correction amount of the second side to be corrected is equal to the initial correction amount of the first side to be corrected;

[0183] An initial correction amount of the third side to be corrected is determined according to the characteristic information of the third side to be corrected, and the initial correction amount of the fourth side to be corrected is equal to the initial correction amount of the third side to be corrected.

[0184] In some specific embodiments, the second computing unit may be specifically used for:

[0185] According to the characteristic information, the maximum allowable correction amount and the target correction amount of the edge to be corrected are determined;

[0186] The minimum value between the maximum allowable correction amount and the target correction amount is determined as the initial correction amount of the edge to be corrected.

[0187] In some examples, the initial correction amount of the edge to be corrected can be calculated by the formula:

[0188]

[0189] Wherein, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphics, W is the length of the edge to be corrected, and K is a constant related to the process conditions.

[0190] In some embodiments, in order to obtain the constant K related to the process conditions, the acquisition module 401 may also be used to:

[0191] Obtain the historical original through-hole pattern layout and the historical revised through-hole pattern layout.

[0192] Furthermore, the calculation module 402 may also be used for:

[0193] Extract characteristic information of at least one historical through-hole pattern in the historical original through-hole pattern layout, and calculate the historical correction amount of the historical through-hole pattern;

[0194] According to the characteristic information and historical correction amount of each historical through-hole pattern, the constant value related to the process condition corresponding to each historical through-hole pattern is calculated, and the constant K related to the process condition is the average value of all constant values ​​related to the process condition.

[0195] (3) Generate module 403

[0196] The generating module 403 is used to generate an initial corrected through hole pattern layout based on the correction direction and initial correction amount of the edge to be corrected transmitted by the calculating module 402.

[0197] (4) Correction module 404

[0198] The correction module 404 is used to further correct the initial corrected via pattern layout transmitted by the generation module 403, and output the corrected via pattern layout after satisfying preset conditions through multiple optical proximity correction cyclic iterative calculations.

[0199] In specific implementation, the above units and modules can be implemented as independent entities, or can be arbitrarily combined to be implemented as the same or several entities. The specific implementation of the above units and modules can refer to the previous method embodiments, which will not be repeated here.

[0200] A person of ordinary skill in the art will appreciate that all or part of the steps in the various methods of the above embodiments may be completed by instructions, or by controlling related hardware through instructions. The instructions may be stored in a computer-readable storage medium and loaded and executed by a processor.

[0201] To this end, the embodiment of the present application further provides a computer-readable storage medium, which stores a computer program, and the computer program can be loaded by a processor to execute the steps in any method for correcting a through-hole pattern layout provided in the embodiment of the present application. For example, the computer program can execute the following steps:

[0202] Acquire an original through-hole pattern layout, the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one edge to be corrected;

[0203] Acquire characteristic information of the edge to be corrected of the through-hole pattern, calculate the correction direction and initial correction amount of the edge to be corrected, the characteristic information includes the length of the edge to be corrected, and / or the spacing between the edge to be corrected and an adjacent pattern, and / or the projection length of the edge to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the edge to be corrected along a target direction, and the target direction is perpendicular to the length direction of the edge to be corrected;

[0204] Generate an initial corrected through-hole pattern layout based on the correction direction and initial correction amount of the edge to be corrected;

[0205] The initial corrected through-hole pattern layout is corrected again, and after multiple optical proximity correction iterative calculations, the corrected through-hole pattern layout is output after satisfying preset conditions.

[0206] The specific implementation of the above operations can be found in the previous embodiments, which will not be described in detail here.

[0207] The computer-readable storage medium may include: a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0208] Since the computer program stored in the computer-readable storage medium can execute the steps in any method for correcting a through-hole pattern layout provided in the embodiments of the present application, the beneficial effects that can be achieved by any method for correcting a through-hole pattern layout provided in the embodiments of the present application can be achieved. For details, please refer to the previous embodiments and will not be repeated here.

[0209] The above is a detailed introduction to a method, device and computer-readable storage medium for correcting a through-hole pattern layout provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technicians in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for correcting a through hole pattern layout, characterized in that: include: Acquire an original through-hole pattern layout, wherein the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one edge to be corrected; Acquire characteristic information of the side to be corrected of the through-hole pattern, and calculate the correction direction and initial correction amount of the side to be corrected, wherein the characteristic information includes the length of the side to be corrected, and / or the spacing between the side to be corrected and an adjacent pattern, and / or the projection length of the side to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the side to be corrected along a target direction, and the target direction is perpendicular to the length direction of the side to be corrected; Based on the correction direction and initial correction amount of the edge to be corrected, generating an initial corrected through-hole pattern layout; The initial corrected through hole pattern layout is corrected again, and after multiple optical proximity correction cyclic iterative calculations, a corrected through hole pattern layout is outputted after satisfying preset conditions.

2. The method according to claim 1, characterized in that The step of acquiring feature information of the side to be corrected of the through-hole pattern and calculating a correction direction and an initial correction amount of the side to be corrected includes: Acquire the feature information of each edge to be corrected, and calculate the correction influence factor of each edge to be corrected; Determining a correction direction of each of the edges to be corrected according to the correction influence factor of each of the edges to be corrected; Based on the feature information, an initial correction amount of the edge to be corrected is calculated.

3. The method according to claim 2, characterized in that The correction influence factor α of the edge to be corrected is calculated as follows: Among them, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, Sn is the spacing between the edge to be corrected and the nth adjacent graphic, and W is the length of the edge to be corrected.

4. The method according to claim 2, characterized in that: The through hole pattern is a square hole, the cross section is a square or a rectangle, and the four sides of the square or rectangle are the four sides to be corrected; Determining the correction direction of each edge to be corrected according to the correction influence factor of each edge to be corrected includes: Determine, from the four edges to be corrected, a first edge to be corrected having the smallest correction influence factor, a second edge to be corrected parallel to the first edge to be corrected, a third edge to be corrected, and a fourth edge to be corrected, wherein the fourth edge to be corrected is parallel to the third edge to be corrected, and the correction influence factor of the third edge to be corrected is greater than or equal to the correction influence factor of the fourth edge to be corrected; The correction directions of the first to-be-corrected edge and the second to-be-corrected edge are determined to be first preset correction directions, and the correction directions of the third to-be-corrected edge and the fourth to-be-corrected edge are determined to be second preset correction directions.

5. The method according to claim 4, characterized in that The calculating, based on the feature information, an initial correction amount of the edge to be corrected includes: Determining an initial correction amount of the first edge to be corrected according to the characteristic information of the first edge to be corrected, and the initial correction amount of the second edge to be corrected is equal to the initial correction amount of the first edge to be corrected; An initial correction amount of the third side to be corrected is determined according to the characteristic information of the third side to be corrected, and the initial correction amount of the fourth side to be corrected is equal to the initial correction amount of the third side to be corrected.

6. The method according to claim 2, characterized in that The calculating, based on the feature information, an initial correction amount of the edge to be corrected includes: Determining a maximum allowable correction amount and a target correction amount of the edge to be corrected according to the characteristic information; The minimum value between the maximum allowable correction amount and the target correction amount is determined as the initial correction amount of the edge to be corrected.

7. The method according to claim 6, characterized in that The initial correction amount β of the edge to be corrected is calculated as follows: Among them, n is the number of graphics adjacent to the edge to be corrected in the length direction perpendicular to the edge to be corrected, Ln is the projection length of the edge to be corrected on the nth adjacent graphic, W is the length of the edge to be corrected, and K is a constant related to the process conditions.

8. The method according to claim 7, characterized in that The method for obtaining the constant K related to the process conditions includes: Obtaining a historical original through hole pattern layout and a historical revised through hole pattern layout; Extracting characteristic information of at least one historical through-hole pattern in the historical original through-hole pattern layout, and calculating a historical correction amount of the historical through-hole pattern; According to the characteristic information and the historical correction amount of each of the historical through-hole patterns, a constant value related to the process conditions corresponding to each of the historical through-hole patterns is calculated, and the constant K related to the process conditions is the average value of all the constant values ​​related to the process conditions.

9. A correction device for through-hole pattern layout, characterized in that: include: An acquisition module is used to acquire an original through-hole pattern layout, wherein the original through-hole pattern layout includes at least one through-hole pattern, and the through-hole pattern includes at least one side to be corrected; and is also used to acquire characteristic information of the side to be corrected of the through-hole pattern, wherein the characteristic information includes the length of the side to be corrected, and / or the spacing between the side to be corrected and an adjacent pattern, and / or the projection length of the side to be corrected on the adjacent pattern, wherein the adjacent pattern is a pattern in the original through-hole pattern layout that is adjacent to the side to be corrected along a target direction, and the target direction is perpendicular to the length direction of the side to be corrected; A calculation module, used for calculating the correction direction and initial correction amount of the edge to be corrected according to the feature information of the edge to be corrected of the through-hole pattern transmitted by the acquisition module; A generating module, configured to generate an initial corrected through-hole pattern layout based on the correction direction and initial correction amount of the edge to be corrected transmitted by the calculating module; The correction module is used to re-correct the initial corrected through-hole pattern layout transmitted by the generation module, and output the corrected through-hole pattern layout after satisfying preset conditions through multiple optical proximity correction cyclic iterative calculations.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and the computer program is suitable for being loaded by a processor to execute the method according to any one of claims 1 to 8.

Images