Packaging structure and packaging device

Abstract

The embodiment of the invention provides a packaging structure and a packaging device, relates to the technical field of semiconductor packaging, and aims to solve the problem of non-uniform wiring thickness in a metal wiring layer in the prior art. The packaging structure comprises a substrate, an auxiliary electrode layer located on the substrate, a dielectric layer located on the auxiliary electrode layer, and a metal wiring layer located on the dielectric layer. Wherein the auxiliary electrode layer comprises an auxiliary electrode, the metal wiring layer comprises a metal wire, the metal wire comprises a seed metal layer and a growth metal layer, the seed metal layer is electrically connected with the auxiliary electrode through a via hole in the dielectric layer, and the growth metal layer is electrically connected with the seed metal layer. The auxiliary electrode is used for providing auxiliary cathode voltage for the seed metal layer in the growth process of the growth metal layer.

Description

Technical Field

[0001] The present application relates to the field of semiconductor packaging technology, and in particular to a packaging structure and a packaging device. Background Art

[0002] In the process of packaging semiconductor electronic components, metal wiring layers and welding points are usually made on the substrate in sequence, and then the electronic components are connected to the welding points. In the process of making the metal wiring layer, the wiring in the metal wiring layer is usually made by electroplating metal (for example, copper). However, with the increase in demand for large-sized electronic component products, the size of the substrate and the metal wiring layer is also increased, which leads to the problem of uneven thickness of the electroplated metal film during the metal plating process, thereby affecting the uniformity of the thickness of the wiring in the metal wiring layer. Summary of the invention

[0003] The embodiments of the present application provide a packaging structure and a packaging device to solve the problem of uneven wiring thickness in a metal wiring layer in the related art.

[0004] On the one hand, an embodiment of the present application provides a packaging structure, which includes: a substrate, an auxiliary electrode layer located on the substrate, a dielectric layer located on the auxiliary electrode layer, and a metal wiring layer located on the dielectric layer; wherein the auxiliary electrode layer includes an auxiliary electrode, the metal wiring layer includes a metal trace, the metal trace includes a seed metal layer and a growth metal layer, the seed metal layer is electrically connected to the auxiliary electrode through a via on the dielectric layer, and the auxiliary electrode is used to provide an auxiliary cathode voltage to the seed metal layer during the growth process of the growth metal layer.

[0005] In some embodiments, the metal routing includes a first routing and a second routing, the via includes a first sub-via and a second sub-via, and the first routing and the second routing are electrically connected to the auxiliary electrode through the first sub-via and the second sub-via, respectively.

[0006] In some embodiments, the packaging structure has a first electronic component area and a second electronic component area, and the dielectric layer is provided with a first opening between the first electronic component area and the second electronic component area.

[0007] In some embodiments, the auxiliary electrode layer further includes a transition electrode electrically connected to the auxiliary electrode, the transition electrode is located between the first electronic component region and the second electronic component region, and the first opening exposes a portion of the transition electrode.

[0008] In some embodiments, the metal wiring layer includes multiple sub-wiring layers and a first insulating layer located between two adjacent sub-wiring layers, at least one of the metal traces is located in the sub-wiring layer close to the substrate side among the multiple sub-wiring layers, and the first insulating layer is provided with a second opening between the first electronic component area and the second electronic component area, and the second opening exposes a portion of the transition electrode.

[0009] In some embodiments, the packaging structure further includes a welding layer located on a side of the metal wiring layer away from the substrate, the wiring layer includes a connecting wire electrically connected to the auxiliary electrode and an interconnecting wire electrically connected to the welding layer, and the thickness of the interconnecting wire is greater than the thickness of the connecting wire.

[0010] In some embodiments, the packaging structure also includes a second insulating layer and a soldering layer located on the metal wiring layer and arranged in sequence, the second insulating layer has a third opening between the first electronic component area and the second electronic component area, and the third opening exposes part of the transition electrode.

[0011] In some embodiments, the packaging structure also includes a welding layer located on the side of the metal wiring layer away from the substrate, the welding layer includes a plurality of first conductive pads and at least one second conductive pad, the plurality of first conductive pads are configured to be electrically connected to the electronic components, and at least one second conductive pad is electrically connected to the auxiliary electrode through the metal routing.

[0012] In some embodiments, a thickness of the first conducting pad is greater than a thickness of the second conducting pad.

[0013] In some embodiments, a first adhesive layer for adhering the welding layer is further provided on a side of the welding layer close to the substrate.

[0014] In some embodiments, the metal wiring layer includes a plurality of sub-wiring layers and a first insulating layer located between two adjacent sub-wiring layers, and a second adhesive layer for adhering the sub-wiring layers is further provided on a side of the sub-wiring layer close to the substrate.

[0015] In some embodiments, the auxiliary electrode includes a first sub-auxiliary electrode and a second sub-auxiliary electrode, the metal routing includes a first routing and a third routing, a plurality of the first conductive pads are electrically connected to the first sub-auxiliary electrode through the first routing, and at least one of the second conductive pads is electrically connected to the second sub-auxiliary electrode through the third routing.

[0016] In some embodiments, the packaging structure further includes an adhesion layer located between the dielectric layer and the metal wiring layer, and the adhesion layer includes an adhesion electrode electrically connected to the auxiliary electrode and the metal wiring layer.

[0017] On the other hand, an embodiment of the present application also provides a packaging structure, which includes: a substrate, an auxiliary electrode layer located on the substrate, a dielectric layer located on the auxiliary electrode layer, and a metal wiring layer located on the dielectric layer; wherein the auxiliary electrode layer includes a transition electrode, the dielectric layer is provided with a first opening between the first electronic component area and the second electronic component area, and the first opening exposes part of the transition electrode; the metal wiring layer includes a metal routing, the metal routing includes a seed metal layer and a growth metal layer, and the transition electrode is used to provide an auxiliary cathode voltage to the seed metal layer during the growth process of the growth metal layer.

[0018] In some embodiments, the metal wiring layer includes multiple sub-wiring layers and a first insulating layer located between two adjacent sub-wiring layers, the metal routing is located in the sub-wiring layer close to the substrate side among the multiple sub-wiring layers, the first insulating layer is provided with a second opening between the first electronic component area and the second electronic component area, and the second opening exposes part of the transition electrode.

[0019] In some embodiments, the packaging structure also includes a second insulating layer and a soldering layer located on one side of the metal wiring layer, the second insulating layer has a third opening between the first electronic component area and the second electronic component area, and the third opening exposes part of the transition electrode.

[0020] On the other hand, an embodiment of the present application further provides a packaging device, which includes the packaging structure as described in any of the above embodiments.

[0021] For the packaging structure provided in the embodiment of the present application, since an auxiliary electrode layer is provided, and the auxiliary electrode in the auxiliary electrode layer is electrically connected to the metal wiring layer, the auxiliary electrode can be used to assist in powering the seed metal material layer during the production process of the metal wiring. On the one hand, since the auxiliary electrode assists in powering the seed metal material layer, the current flow path is increased, which is beneficial to improving the current uniformity at various positions on the seed metal material layer. On the other hand, since the auxiliary electrode is connected to the seed metal material layer through the via on the dielectric layer, the voltage loss of the seed metal material layer near the via position is relatively small, so the current density distribution uniformity at this position is good, which is also beneficial to improving the thickness uniformity of the metal wiring located around the via. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a cross-sectional structural diagram of a metal wiring layer in the related art during the production process using a copper electroplating process;

[0023] Figure 2is a cross-sectional view of a packaging structure provided by some embodiments of the present application;

[0024] Figure 3 is a cross-sectional view of a packaging structure provided by other embodiments of the present application;

[0025] Figure 4 is a cross-sectional view of a packaging structure provided by some other embodiments of the present application;

[0026] Figure 5 is a cross-sectional view of a packaging structure provided by some other embodiments of the present application;

[0027] Figure 6 is a cross-sectional view of another packaging structure provided by some embodiments of the present application;

[0028] Figure 7 is a cross-sectional view of another packaging structure provided by other embodiments of the present application;

[0029] Figure 8 This is a cross-sectional view of a packaging device provided by some embodiments of the present application. DETAILED DESCRIPTION

[0030] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. The described technical solutions are only used to explain and illustrate the ideas of the present application and should not be regarded as limiting the scope of protection of the present application.

[0031] In the description of this application, it should be understood that the terms "first", "second" and similar words do not indicate any order, quantity or importance, but are only used to distinguish different technical features. The term "plurality" and similar words mean two or more, unless otherwise clearly defined.

[0032] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0033] The use of "suitable for" or "configured to" in this application is meant to be open and inclusive language, which does not exclude devices that are suitable for or configured to perform additional tasks or steps. In addition, the use of "based on" is meant to be open and inclusive, because the process, step, calculation or other action "based on" one or more stated conditions or values ​​can be based on additional conditions or values ​​beyond the stated values ​​in practice.

[0034] In this application, the word "exemplary" is used to mean "serving as an example, illustration, or description." Any embodiment described as "exemplary" in this application is not necessarily to be construed as being preferred or advantageous over other embodiments. The following description is provided to enable any person skilled in the art to implement and use the present application.

[0035] The various embodiments of the present application are similar, and features in different embodiments and / or different examples may be combined with each other.

[0036] In related technologies, such as Figure 1 As shown, in the process of packaging electronic components to form a packaged device, it is usually necessary to sequentially manufacture a metal wiring layer 02 and welding points on a substrate 01, then connect the electronic components to the welding points, and then set a protective layer to package and protect the electronic components.

[0037] In the process of manufacturing the routing in the metal wiring layer 02 by using the electroplating metal (for example, copper electroplating) process, it is usually necessary to first manufacture a seed metal material layer 021, and then use the seed metal material layer 021 as a cathode for the electroplating metal process to form a growth metal layer 022 above the seed metal material layer 021, and finally form the routing in the metal wiring layer 02 by etching.

[0038] However, for large-size packaging devices, since the seed metal material layer 021 has a large area, when it acts as a cathode and undergoes the metal electroplating process, the seed metal material layer 021 will have a large loss when the cathode voltage is input, resulting in uneven current density distribution on the seed metal material layer 021, thereby affecting the uniformity of the thickness of the grown metal layer 022, and ultimately affecting the uniformity of the thickness of the formed routing.

[0039] Based on this, some embodiments of the present application provide a packaging structure, such as Figures 2 to 5 As shown, the package structure 100 includes: a substrate 10, an auxiliary electrode layer 20, a dielectric layer 30 and a metal wiring layer 40. The auxiliary electrode layer 20 is located on the substrate 10, and the auxiliary electrode layer 20 includes an auxiliary electrode 21; the dielectric layer 30 is located on the auxiliary electrode layer 20. The metal wiring layer 40 is located on the dielectric layer 30, and the metal wiring layer 40 is electrically connected to the auxiliary electrode 21 through a via 301 on the dielectric layer 30.

[0040] In some examples, the substrate 10 may be a glass substrate. The glass substrate has good circuit forming capability, thermal stability, and mechanical stability, thereby ensuring that the package structure has low power consumption and excellent working performance. For example, the substrate 10 may be made of glass materials such as soda-lime glass, quartz glass, and sapphire glass.

[0041] When the substrate 10 is a glass substrate, it can effectively adapt to large-sized packaging devices.

[0042] In other examples, the material of the substrate 10 may include one of polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylphenol (PVP), polyether sulfone (PES), polyimide, polyamide, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or any combination thereof.

[0043] The metal wiring layer 40 includes a metal trace 41, and the metal trace 41 includes a seed metal layer 401 and a growth metal layer 402 arranged in sequence along the direction of the dielectric layer 30 away from the substrate 10. The seed metal layer 401 and the growth metal layer 402 can both be made of copper. When the material of the growth metal layer 402 is copper, the above-mentioned electroplating metal process is a copper electroplating process. For the convenience of explanation, the copper electroplating process is taken as an example for explanation below.

[0044] The metal trace 41 can be prepared by the following copper electroplating process. First, a seed metal material layer is formed by sputtering on the side of the dielectric layer 30 away from the substrate 10; then a pattern defining layer is formed on the surface of the seed metal material layer away from the substrate 10, and the pattern defining layer is formed with multiple patterned openings exposing the seed metal material layer; then the seed metal material layer is used as a cathode and a copper electroplating process is performed to form a metal growth material layer in the opening of the pattern defining layer; then the pattern defining layer is removed; finally, the portion of the seed metal material layer not covered by the metal growth material layer is removed by etching. Therefore, the portion of the seed metal material layer that is finally retained forms the seed metal layer 401, and the portion of the metal growth material layer that is finally retained forms the growth metal layer 402.

[0045] Since the packaging structure 100 of the present application is provided with an auxiliary electrode layer 20, and the auxiliary electrode 21 in the auxiliary electrode layer 20 is electrically connected to the metal wiring layer 40, the auxiliary electrode 21 is used to provide an auxiliary cathode voltage to the seed metal material layer (e.g., the seed metal layer 401) during the growth process of the metal growth material layer (e.g., the growth metal layer 402), so that in the process of making the metal wiring 41, the auxiliary electrode 21 can be used to assist in powering the seed metal material layer. On the one hand, since the auxiliary electrode 21 assists in powering the seed metal material layer, its current flow path is increased, which is conducive to improving the current uniformity of each position on the seed metal material layer. On the other hand, since the auxiliary electrode 21 is connected to the seed metal material layer through the via 301 on the dielectric layer 30, the voltage loss of the seed metal material layer at the position close to the via 301 is relatively small, so the current density distribution uniformity at this position is good, which is also conducive to improving the thickness uniformity of the metal wiring 41 located around the via 301.

[0046] In some examples, the auxiliary cathode voltage input to the auxiliary electrode 21 is approximately equal to the cathode voltage input to the seed metal material layer during the copper electroplating process (for example, the values ​​of the auxiliary cathode voltage and the cathode voltage are equal), thereby ensuring the current uniformity at different positions on the seed metal material layer, thereby improving the thickness uniformity of the metal traces 41 in the metal wiring layer 40 at different positions.

[0047] In some embodiments, Figure 2 and Figure 3 As shown, the auxiliary electrode 21 is partially exposed outside the dielectric layer 30, and the part of the auxiliary electrode 21 covered by the dielectric layer 30 is electrically connected to the metal wiring layer 40 through the via 301. Since the auxiliary electrode 21 is partially exposed outside the dielectric layer 30, it is convenient to input the auxiliary cathode voltage.

[0048] In some embodiments, Figure 4 and Figure 5 As shown, the auxiliary electrode layer 20 further includes an input electrode 22 electrically connected to the auxiliary electrode 21. The input electrode 22 is partially exposed outside the dielectric layer 30, so that it is convenient to input the auxiliary cathode voltage.

[0049] In some examples, the material of the auxiliary electrode layer 20 includes a metal material resistant to etching by an etching solution, wherein the etching solution is used to etch the above-mentioned seed metal material layer. For example, the auxiliary electrode layer 20 may include an ITO (Indium Tin Oxide, indium tin oxide) metal layer, an Ag (silver) metal layer, an ITO metal layer, or an IZO (Indium Zinc Oxide, indium zinc oxide) metal layer, an Ag (silver) metal layer, an ITO metal layer, etc., which are stacked in sequence. In this way, during the preparation of the metal trace 41 by the electroplating copper process, the auxiliary electrode layer 20 can be prevented from being etched by the etching solution used to etch copper, thereby ensuring its subsequent stable input of the auxiliary cathode voltage.

[0050] In some embodiments, Figure 4 and Figure 5 As shown, the package structure 100 further includes an adhesion layer 50 located between the dielectric layer 30 and the metal wiring layer 40, and the adhesion layer 50 includes a first adhesion electrode 51, and the first adhesion electrode 51 is electrically connected to the auxiliary electrode 21 and part of the wiring of the metal wiring layer 40 (for example, the first wiring 42, the second wiring 43, and the third wiring 44 described below). The adhesion layer 50 can be made of metal materials such as molybdenum, titanium, or molybdenum-titanium alloy to improve the connection stability between the electrodes and wirings on both sides thereof.

[0051] In addition, the first adhesive electrode 51 is also partially in contact with the dielectric layer 30. Therefore, by utilizing the adhesion of the first adhesive electrode 51, the connection stability between the metal wiring layer 40 and the auxiliary electrode 21 can be enhanced on the one hand, and the adhesion between the metal wiring layer 40 and the dielectric layer 30 can be enhanced on the other hand, thereby improving the structural stability of the packaging structure 100.

[0052] In some examples, the first adhesive electrode 51 partially fills the via hole 301 .

[0053] In some examples, the adhesive layer 50 further includes a second adhesive electrode 52 , which is electrically connected to another portion of the wiring of the metal wiring layer 40 , under which no opening is provided in the dielectric layer 30 . Therefore, this portion of the wiring is not connected to the auxiliary electrode 21 .

[0054] In this case, the second adhesion electrode 52 serves to improve the adhesion between the portion of the wiring and the dielectric layer 30 , thereby enhancing the stability of the metal wiring layer 40 .

[0055] In some embodiments, Figures 3 to 5As shown, the metal wiring layer 40 includes a first routing line 42 and a second routing line 43, and the via 301 includes a first sub-via 3011 and a second sub-via 3012. The first routing line 42 and the second routing line 43 are electrically connected to the auxiliary electrode 21 through the first sub-via 3011 and the second sub-via 3012. The first routing line 42 and the second routing line 43 are both metal routing lines 41, that is, the first routing line 42 and the second routing line 43 respectively include a seed metal layer 401 and a growth metal layer 402.

[0056] In this case, the auxiliary electrode 21 is not only used to provide an auxiliary cathode voltage, so that during the manufacturing process of the first wiring 42 and the second wiring 43, the auxiliary electrode 21 can provide the auxiliary cathode voltage to the position of the seed metal material layer corresponding to the first wiring 42 and the second wiring 43 through a shorter path, thereby ensuring the uniformity of the current distribution at the position, thereby improving the uniformity of the thickness of the first wiring 42 and the second wiring 43; in addition, the auxiliary electrode 21 can also be used as an interconnect electrode to achieve electrical connection between the first wiring 42 and the second wiring 43, which is conducive to reducing the setting of additional electrode layers to achieve cross-layer connection between the first wiring 42 and the second wiring 43, which is conducive to reducing the overall thickness of the packaging structure 100.

[0057] In some examples, the first trace 42 and the second trace 43 may be disposed on the same layer.

[0058] In some examples, the auxiliary electrode 21 includes a first sub-auxiliary electrode 211 , and the first routing line 42 and the second routing line 43 are electrically connected to the first sub-auxiliary electrode 211 through the first sub-via 3011 and the second sub-via 3012 , respectively.

[0059] In some embodiments, Figure 4 and Figure 5 As shown, the packaging structure 100 also includes a welding layer 70 located on the side of the metal wiring layer 40 away from the substrate 10, and the welding layer 70 includes a plurality of first conductive pads 71 ​​and at least one second conductive pad 72, the plurality of first conductive pads 71 ​​are configured to electrically connect electronic components, and the at least one second conductive pad 72 is electrically connected to the auxiliary electrode 21 through the metal wiring layer 40.

[0060] Through the above-mentioned setting, the welding layer 70 can be manufactured by using the copper electroplating process. Since the second conductive pad 72 is electrically connected to the auxiliary electrode 21 through the metal wiring layer 40, the auxiliary electrode 21 can be used to input an auxiliary cathode voltage to the second conductive pad 72, which is beneficial to ensure the thickness uniformity of the first conductive pad 71.

[0061] In some embodiments, the thickness of the first conducting pad 71 is greater than the thickness of the second conducting pad 72 .

[0062] In the process of preparing the first conductive pad 71 by the copper electroplating process, part of the seed metal material layer can be retained to serve as the second conductive pad 72. That is, the second conductive pad 72 only includes part of the seed metal material layer, and the first conductive pad 71, in addition to including part of the seed metal material layer, also includes a growth metal layer formed by electroplating on the seed metal material layer.

[0063] Since the second conductive pad 72 is not involved in the connection of the electronic component, by setting the second conductive pad 72 to have a relatively small thickness, it is helpful to avoid the electronic component being mistakenly connected to the second conductive pad 72, which may cause the final packaged device to work abnormally.

[0064] In some examples, such as Figure 4 and Figure 5 As shown, the auxiliary electrode 21 includes a first sub-auxiliary electrode 211 and a second sub-auxiliary electrode 212, the metal wiring layer 40 includes a first routing 42 and a third routing 44, a plurality of first conductive pads 71 ​​are electrically connected to the first sub-auxiliary electrode 211 through the first routing 42, and at least one second conductive pad 72 is electrically connected to the second sub-auxiliary electrode 212 through the third routing 44.

[0065] In some examples, the first routing line 42, the second routing line 43, and the third routing line 44 may be disposed in the same sub-wiring layer in the metal wiring layer 40. For example, the first routing line 42, the second routing line 43, and the third routing line 44 are located in the first sub-wiring layer 410.

[0066] In some embodiments, Figure 4 and Figure 5 As shown, the package structure 100 has a first electronic component area A1 and a second electronic component area A2, and a spacer is provided between the first electronic component area A1 and the second electronic component area A2. The dielectric layer 30 has a first opening K1 between the first electronic component area A1 and the second electronic component area A2, and the first opening K1 can be located in the spacer.

[0067] The first electronic component area A1 is used to install the first electronic component, and the second electronic component area A2 is used to install the second electronic component. By setting the first opening K1 between the two electronic component areas, the stress of the dielectric layer 30 can be reduced, thereby facilitating the problem of warping of the dielectric layer 30.

[0068] In some embodiments, Figure 4 and Figure 5 As shown, the auxiliary electrode layer 20 further includes a transition electrode 23 electrically connected to the auxiliary electrode 21. The transition electrode 23 is located between the first electronic component area A1 and the second electronic component area A2, and the first opening K1 exposes a portion of the transition electrode 23.

[0069] When the first sub-wiring layer 410 (the sub-wiring layer on the side of the metal wiring layer 40 close to the substrate 10) is produced by the copper electroplating process, the seed metal material layer is firstly sputtered on the entire surface of the dielectric layer 30 away from the substrate 10. Since part of the transition electrode 23 is exposed to the position of the first opening K1, the seed metal material layer will be partially sputtered in the first opening K1 and contact the transition electrode 23. Therefore, by passing the auxiliary cathode voltage to the transition electrode 23, the uniformity of the current density distribution of the seed metal material layer can be improved, thereby improving the thickness uniformity of the metal growth material layer in the subsequent formation process of the metal growth material layer. In this way, the thickness uniformity of the routing (such as the first routing 42, the second routing 43 and the third routing 44) in the first sub-wiring layer 410 can be further improved.

[0070] In some embodiments, Figure 4 and Figure 5 As shown, the metal wiring layer 40 includes a plurality of sub-wiring layers arranged along its thickness direction and a first insulating layer 420 located between two adjacent sub-wiring layers. The first insulating layer 420 is provided with a second opening K2 between the first electronic component area A1 and the second electronic component area A2, and the second opening K2 exposes part of the transition electrode 23.

[0071] Since the sub-wiring layers are all made by the copper electroplating process, the sub-wiring layers have a large thickness. In this case, the first insulating layer 420 covering the sub-wiring layer also has a large thickness, which also means that when the overall size of the first insulating layer 420 is large, it has a large stress. By setting the second opening K2, the stress of the first insulating layer 420 can be reduced, which is conducive to avoiding the problem of warping of the first insulating layer 420. In addition, since the second opening K2 exposes part of the transition electrode 23, in the process of making the sub-wiring layer located on the side of the first insulating layer 420 away from the substrate 10 in the metal wiring layer 40 by the copper electroplating process, its seed metal material layer can contact the transition electrode 23 and input the auxiliary cathode voltage, which is conducive to improving the current uniformity of the seed metal material layer, and then improving the thickness uniformity of the wiring in the sub-wiring layer.

[0072] For the sake of convenience of explanation, the present application takes the example that the metal wiring layer 40 includes two sub-wiring layers, but this does not constitute a limitation to the present application.

[0073] The two sub-wiring layers are respectively a first sub-wiring layer 410 and a second sub-wiring layer 430. The first sub-wiring layer 410 is located on a side of the second sub-wiring layer 430 close to the substrate 10, and the first insulating layer 420 is located between the first sub-wiring layer 410 and the second sub-wiring layer 430. Therefore, since the second opening K2 of the first insulating layer 420 exposes part of the transition electrode 23, the thickness uniformity of the wiring in the second sub-wiring layer 430 can be effectively improved.

[0074] In the case where the metal wiring layer 40 includes three or more sub-wiring layers, the number of first insulating layers is greater than or equal to two, and the openings of all first insulating layers between the first electronic component area A1 and the second electronic component area A2 together constitute the second opening K2.

[0075] In some examples, the second opening K2 exposes the first opening K1. That is, the size of the second opening K2 is larger than the size of the first opening K1, so as to expose the side wall of the dielectric layer 30 located at the first opening K1. This is beneficial to ensure that the seed metal material layer has good continuity during the copper electroplating process of the second sub-wiring layer 430, and avoids disconnection due to the step difference at the position of the second opening K2, thereby affecting the subsequent production of the wiring in the second sub-wiring layer 430.

[0076] In some embodiments, Figure 5 As shown, in the case where the packaging structure 100 includes a welding layer 70, the wiring layer (for example, the first sub-wiring layer 410 or the second sub-wiring layer 430) includes a connecting trace 431 electrically connected to the auxiliary electrode 21 and an interconnecting trace 432 electrically connected to the welding layer 70, and the thickness of the interconnecting trace 432 is greater than the thickness of the connecting trace 431.

[0077] The connection trace 431 is mainly used to participate in the production of the wiring layer and the welding layer 70, and the interconnection trace 432 needs to transmit signals of the electronic components connected to the welding layer 70 after being connected to the welding layer 70. By setting the interconnection trace 432 to a relatively large thickness, the stability of the signal transmission of the electronic components can be guaranteed. In addition, since the connection trace 431 only needs to ensure that it can input the auxiliary cathode voltage during the production of the wiring layer and the welding layer 70, it can be set to a smaller thickness.

[0078] In some embodiments, Figure 4 and Figure 5 As shown, the package structure 100 includes a second insulating layer 60 and a solder layer 70 disposed sequentially on the metal wiring layer 40. The second insulating layer 60 has a third opening K3 between the first electronic component area A1 and the second electronic component area A2, and the third opening K3 exposes a portion of the transition electrode 23.

[0079] Since the sub-wiring layers are all made by the copper electroplating process, the sub-wiring layers have a large thickness. In this case, the second insulating layer 60 covering the uppermost sub-wiring layer in the metal wiring layer 40 also has a large thickness, which also means that when the overall size of the second insulating layer 60 is large, it has a large stress. By setting the third opening K3, the stress of the second insulating layer 60 can be reduced, which is conducive to avoiding the problem of warping of the second insulating layer 60. In addition, since the third opening K3 exposes part of the transition electrode 23, in the process of making the welding layer 70 by the copper electroplating process, its seed metal material layer can contact the transition electrode 23 and input the auxiliary cathode voltage, which is conducive to improving the current uniformity of the seed metal material layer, and then improving the thickness uniformity of the conductive pads (such as the first conductive pad 71 and the second conductive pad 72) in the welding layer 70.

[0080] In some examples, the third opening K3 exposes the second opening K2. That is, the size of the third opening K3 is larger than the size of the second opening K2, so as to expose the side wall of the first insulating layer 420 located at the second opening K2. This is beneficial to ensure that the seed metal material layer has good continuity during the copper electroplating process of the welding layer 70, and avoids the disconnection due to the step difference at the position of the third opening K3, thereby affecting the subsequent production of the conductive pad in the welding layer 70.

[0081] In some examples, a first adhesive layer for adhering the soldering layer 70 is provided on a side of the soldering layer 70 close to the substrate 10 (i.e., below the soldering layer 70). The structure and material of the first adhesive layer can be set with reference to the structure and material of the third adhesive layer (i.e., the adhesive layer 50 located between the dielectric layer 30 and the metal wiring layer 40), and will not be described in detail here.

[0082] In some examples, a second adhesion layer for adhering the sub-wiring layer may be provided below other sub-wiring layers (e.g., the second sub-wiring layer 430) in the metal wiring layer 40 except the first sub-wiring layer 410. The sub-wiring layer can be adhered to the corresponding insulating layer through the second adhesion layer, thereby improving the wiring stability of the sub-wiring layer and further improving the structural stability of the packaging structure 100.

[0083] In other examples, no adhesion layer may be provided under the sub-wiring layers other than the first sub-wiring layer 410 in the metal wiring layer 40 and the welding layer 70, which is helpful to save the process of the metal wiring layer 40 and the welding layer 70, thereby saving costs.

[0084] Some embodiments of the present application provide a method for manufacturing a packaging structure, which includes the following steps.

[0085] S10 : forming an auxiliary electrode layer 20 on the substrate 10 .

[0086] S20 : ​​forming a dielectric layer 30 on the auxiliary electrode layer 20 , and opening a via hole 301 in the dielectric layer 30 .

[0087] The via hole 301 is used to expose the auxiliary electrode 21 in the auxiliary electrode layer 20 so as to realize the auxiliary electrode 21 in a subsequent process.

[0088] S30 : manufacturing a metal wiring layer 40 on the dielectric layer 30 , wherein the metal wiring layer 40 includes at least one metal wiring 41 , and the metal wiring 41 includes a seed metal layer 401 and a growth metal layer 402 , and the seed metal layer 401 is electrically connected to the auxiliary electrode 21 through the via 301 .

[0089] The above-mentioned packaging structure 100 can be manufactured by this manufacturing method. Therefore, this manufacturing method has all the technical effects of the packaging structure 100, and will not be described in detail here.

[0090] In some examples, the metal wiring layer 40 includes a first sub-wiring layer 410 , and a method for manufacturing the first sub-wiring layer 410 is as follows.

[0091] S301: sputtering to form a seed metal material layer on a side of the dielectric layer 30 facing away from the substrate 10;

[0092] S302: forming a pattern defining layer on a surface of the seed metal material layer facing away from the substrate 10, wherein the pattern defining layer is formed with a plurality of patterned openings exposing the seed metal material layer;

[0093] S303: using the seed metal material layer as a cathode and supplying a cathode voltage, and supplying an auxiliary cathode voltage to the auxiliary electrode 21, and forming a metal growth material layer in the opening of the pattern definition layer by a copper electroplating process;

[0094] S304: removing the pattern defining layer;

[0095] S305: removing the portion of the seed metal material layer not covered by the metal growth material layer by etching, so as to form the first wiring 42, the second wiring 43, the third wiring 44, etc. in the first sub-wiring layer 410.

[0096] The dielectric layer 30 may be manufactured, for example, by a PVD (Physical Vapor Deposition) process.

[0097] In the case where the package structure 100 includes an adhesion layer 50, before step S30, the adhesion layer 50 can be formed on the dielectric layer 30. Then, the first sub-wiring layer 410 is formed on the adhesion layer 50. Since the metal material of the adhesion layer 50 can be removed synchronously in the etching step of the seed metal material layer, it is ensured that no interference occurs between the wirings in the first sub-wiring layer 410.

[0098] In the case where the metal wiring layer 40 includes a plurality of sub-wiring layers, other sub-wiring layers may be manufactured by referring to the manufacturing steps of the first sub-wiring layer 410 , which will not be described in detail herein.

[0099] In the case where the package structure 100 includes a soldering layer 70 located on the metal wiring layer 40 , the soldering layer 70 may also be manufactured by referring to the manufacturing steps of the first sub-wiring layer 410 , which will not be described in detail herein.

[0100] Some embodiments of the present application also provide a packaging structure, such as Figure 6 and Figure 7 As shown, the package structure 200 has a first electronic component area A1 and a second electronic component area A2, and the package structure 200 includes: a substrate 10, an auxiliary electrode layer 20, a dielectric layer 30 and a metal wiring layer 40. The auxiliary electrode layer 20 is located on the substrate 10, and the auxiliary electrode layer 20 includes a transition electrode 23; the dielectric layer 30 is located on the auxiliary electrode layer 20, and the dielectric layer 30 has a first opening K1 between the first electronic component area A1 and the second electronic component area A2, and the first opening K1 exposes a portion of the transition electrode 23.

[0101] In some examples, a spacer is provided between the first electronic component area A1 and the second electronic component area A2, and the first opening K1 is located in the spacer. The first electronic component area A1 is used to install the first electronic component, and the second electronic component area A2 is used to install the second electronic component. By providing the first opening K1 between the two electronic component areas, the stress of the dielectric layer 30 can be reduced, thereby facilitating the problem of warping of the dielectric layer 30.

[0102] The metal wiring layer 40 includes a metal trace 41 , which includes a seed metal layer 401 and a growth metal layer 402 arranged in sequence along the dielectric layer 30 away from the substrate 10 . The transition electrode 23 is used to provide an auxiliary cathode voltage to the seed metal layer 401 during the growth of the growth metal layer 402 .

[0103] When the metal wiring in the first sub-wiring layer 410 in the metal wiring layer 40 (the metal wiring layer 40 includes multiple sub-wiring layers, and the first sub-wiring layer 410 is the sub-wiring layer closest to the substrate 10 in the metal wiring layer 40) is produced by the copper electroplating process, the seed metal material layer will first be sputtered on the entire surface of the dielectric layer 30 away from the substrate 10. Since part of the transition electrode 23 is exposed to the position of the first opening K1, the seed metal material layer will be partially sputtered in the first opening K1 and contact the transition electrode 23. Therefore, by passing an auxiliary cathode voltage to the transition electrode 23, the uniformity of the current density distribution of the seed metal material layer can be improved, thereby improving the thickness uniformity of the metal growth material layer in the subsequent formation process of the metal growth material layer. In this way, the thickness uniformity of the metal wiring in the first sub-wiring layer 410 can be further improved.

[0104] In some embodiments, Figure 6 and Figure 7 As shown, the metal wiring layer 40 includes a plurality of sub-wiring layers arranged along its thickness direction and a first insulating layer 420 located between two adjacent sub-wiring layers. The first insulating layer 420 is provided with a second opening K2 between the first electronic component area A1 and the second electronic component area A2, and the second opening K2 exposes part of the transition electrode 23.

[0105] Since the sub-wiring layers are all made by the copper electroplating process, the sub-wiring layers have a large thickness. In this case, the first insulating layer 420 covering the sub-wiring layer also has a large thickness, which also means that when the overall size of the first insulating layer 420 is large, it has a large stress. By setting the second opening K2, the stress of the first insulating layer 420 can be reduced, which is conducive to avoiding the problem of warping of the first insulating layer 420. In addition, since the second opening K2 exposes part of the transition electrode 23, in the process of making the sub-wiring layer located on the side of the first insulating layer 420 away from the substrate 10 in the metal wiring layer 40 by the copper electroplating process, its seed metal material layer can contact the transition electrode 23 and input the auxiliary cathode voltage, which is conducive to improving the current uniformity of the seed metal material layer, and then improving the thickness uniformity of the wiring in the sub-wiring layer.

[0106] In some examples, the second opening K2 exposes the first opening K1. That is, the size of the second opening K2 is larger than the size of the first opening K1, so as to expose the side wall of the dielectric layer 30 located at the first opening K1. This is beneficial to ensure that the seed metal material layer has good continuity during the copper electroplating process of the second sub-wiring layer 430, and avoids disconnection due to the step difference at the position of the second opening K2, thereby affecting the subsequent production of the wiring in the second sub-wiring layer 430.

[0107] In some embodiments, Figure 6 and Figure 7 As shown, the package structure 200 further includes a second insulating layer 60 and a soldering layer 70 disposed sequentially on the metal wiring layer 40. The second insulating layer 60 has a third opening K3 between the first electronic component area A1 and the second electronic component area A2, and the third opening K3 exposes a portion of the transition electrode 23.

[0108] Since the sub-wiring layers are all made by the copper electroplating process, the sub-wiring layers have a relatively large thickness. In this case, the second insulating layer 60 covering the uppermost sub-wiring layer in the metal wiring layer 40 also has a relatively large thickness, which also means that when the overall size of the second insulating layer 60 is relatively large, it has a relatively large stress. By setting the third opening K3, the stress of the second insulating layer 60 can be reduced, which is conducive to avoiding the problem of warping of the second insulating layer 60. In addition, since the third opening K3 exposes part of the transition electrode 23, in the process of making the welding layer 70 by the copper electroplating process, its seed metal material layer can contact the transition electrode 23 and input the auxiliary cathode voltage, which is conducive to improving the current uniformity of the seed metal material layer, and then improving the thickness uniformity of the conductive pad in the welding layer 70.

[0109] In some examples, the third opening K3 exposes the second opening K2. That is, the size of the third opening K3 is larger than the size of the second opening K2, so as to expose the side wall of the first insulating layer 420 located at the second opening K2. This is beneficial to ensure that the seed metal material layer has good continuity during the copper electroplating process of the welding layer 70, and avoids the disconnection due to the step difference at the position of the third opening K3, thereby affecting the subsequent production of the conductive pad in the welding layer 70.

[0110] In some embodiments, Figure 7 As shown in FIG. 2 , in the package structure 200, the auxiliary electrode layer 20 may further include an auxiliary electrode 21, etc., and the dielectric layer 30 may further include a via 301, etc. In addition, in the above description, other structures in the package structure 100 may be applied to the package structure 200, which may refer to the attached Figure 4 and attached Figure 5 The location layout is carried out and will not be described in detail here.

[0111] Some embodiments of the present application also provide a method for manufacturing a packaging structure 200 , which includes the following steps.

[0112] S11 : manufacturing an auxiliary electrode layer 20 on the substrate 10 , wherein the auxiliary electrode layer 20 includes a transition electrode 23 .

[0113] S21 : manufacturing a dielectric layer 30 on the auxiliary electrode layer 20 , wherein the dielectric layer 30 is provided with a first opening K1 between the first electronic component area A1 and the second electronic component area A2 of the packaging structure 200 , and the first opening K1 exposes a portion of the transition electrode 23 .

[0114] S31 : manufacturing a metal wiring layer 40 on the dielectric layer 30 , wherein the metal wiring layer 40 includes at least one metal wiring 41 , and the metal wiring 41 includes a seed metal layer 401 and a growth metal layer 402 .

[0115] Among them, the transition electrode 23 can provide an auxiliary cathode voltage to the seed metal layer 401 during the growth process of the growth metal layer 402, so as to provide an auxiliary cathode voltage to the seed metal material layer corresponding to the seed metal layer 401, thereby improving the current density uniformity on the seed metal material layer, and further improving the thickness uniformity of the metal routing 41.

[0116] The above-mentioned packaging structure 200 can be manufactured by this manufacturing method. Therefore, this manufacturing method has all the technical effects of the packaging structure 200, and will not be described in detail here.

[0117] Some embodiments of the present application also provide a packaging device, such as Figure 8 As shown, the packaged device 300 includes the package structure described in any of the above embodiments. When the packaged device 300 includes the package structure 100, the packaged device 300 has all the technical effects of the package structure 100, and when the packaged device 300 includes the package structure 200, the packaged device 300 has all the technical effects of the package structure 200, which will not be described in detail here.

[0118] In some examples, the packaged device 300 further includes a first electronic component 81 and a second electronic component 82 , wherein the first electronic component 81 is electrically connected to a plurality of first conductive pads 71 ​​in the first electronic component region A1 , and the second electronic component 82 is electrically connected to a plurality of first conductive pads 71 ​​in the second electronic component region A2 .

[0119] In some examples, the packaged device 300 further includes a protection layer located on the first electronic component 81 and the second electronic component 82 , and the protection layer is used to package the first electronic component 81 and the second electronic component 82 to protect the first electronic component 81 and the second electronic component 82 .

[0120] When the package structure 100 or the package structure 200 has the first opening K1 , the second opening K2 and the third opening K3 , the protection layer may partially fill the first opening K1 , the second opening K2 and the third opening K3 , thereby improving the stability of the overall structure of the package device 300 .

[0121] In some examples, the first electronic component 81 and the second electronic component 82 may be the same. For example, the first electronic component and the second electronic component are both micro light emitting diodes (Micro LED) or mini light emitting diodes (Mini LED). In this way, the packaged device 300 can be used as a display panel for displaying images, and can also be used as a backlight source of a backlight module.

[0122] In other examples, the first electronic component 81 and the second electronic component 82 may also be different. For example, the first electronic component 81 and the second electronic component 82 are chips of different models, so that the integrated connection between different chips can be achieved, thereby facilitating the subsequent use of the packaged device 300.

[0123] It is worth noting that the layout of the wiring in the metal wiring layer 40 and the connection relationship between the metal wiring layer 40 and the welding layer 70 can be adjusted according to actual needs to adapt to the layout requirements of the first electronic component 81 and the second electronic component 82.

[0124] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A packaging structure, characterized in that: include: substrate; An auxiliary electrode layer, located on the substrate, the auxiliary electrode layer includes an auxiliary electrode; a dielectric layer, located on the auxiliary electrode layer; as well as A metal wiring layer is located on the dielectric layer, the metal wiring layer includes at least one metal trace, the metal trace includes a seed metal layer and a growth metal layer, the seed metal layer is electrically connected to the auxiliary electrode through a via hole on the dielectric layer, and the auxiliary electrode is used to provide an auxiliary cathode voltage to the seed metal layer during the growth process of the growth metal layer.

2. The packaging structure according to claim 1, characterized in that: The metal routing includes a first routing and a second routing, the via includes a first sub-via and a second sub-via, and the first routing and the second routing are electrically connected to the auxiliary electrode through the first sub-via and the second sub-via, respectively.

3. The packaging structure according to claim 1, characterized in that: The packaging structure has a first electronic component area and a second electronic component area, and the dielectric layer is provided with a first opening between the first electronic component area and the second electronic component area.

4. The packaging structure according to claim 3, characterized in that: The auxiliary electrode layer further includes a transition electrode electrically connected to the auxiliary electrode, the transition electrode is located between the first electronic component region and the second electronic component region, and the first opening exposes a portion of the transition electrode.

5. The packaging structure according to claim 4, characterized in that: The metal wiring layer includes multiple sub-wiring layers and a first insulating layer located between two adjacent sub-wiring layers. At least one metal routing is located in a sub-wiring layer close to the substrate side among the multiple sub-wiring layers. The first insulating layer is provided with a second opening between the first electronic component area and the second electronic component area, and the second opening exposes part of the transition electrode.

6. The packaging structure according to claim 5, characterized in that: The packaging structure also includes a welding layer located on a side of the metal wiring layer away from the substrate, the wiring layer includes a connecting line electrically connected to the auxiliary electrode and an interconnecting line electrically connected to the welding layer, and the thickness of the interconnecting line is greater than the thickness of the connecting line.

7. The packaging structure according to claim 4, characterized in that: The packaging structure further includes a second insulating layer and a soldering layer which are located on the metal wiring layer and are sequentially arranged. The second insulating layer is provided with a third opening between the first electronic component area and the second electronic component area, and the third opening exposes a portion of the transition electrode.

8. The packaging structure according to any one of claims 1 to 7, characterized in that: The packaging structure also includes a welding layer located on a side of the metal wiring layer away from the substrate, the welding layer includes a plurality of first conductive pads and at least one second conductive pad, the plurality of first conductive pads are configured to be electrically connected to electronic components, and at least one second conductive pad is electrically connected to the auxiliary electrode through the metal routing.

9. The packaging structure according to claim 8, characterized in that: The thickness of the first conducting pad is greater than the thickness of the second conducting pad.

10. The packaging structure according to claim 8, characterized in that: The welding layer is further provided with a first adhesive layer for adhering the welding layer on a side close to the substrate; and / or The metal wiring layer includes a plurality of sub-wiring layers and a first insulating layer located between two adjacent sub-wiring layers. A second adhesive layer for adhering the sub-wiring layers is further provided on the side of the sub-wiring layer close to the substrate.

11. The packaging structure according to claim 8, characterized in that: The auxiliary electrode includes a first sub-auxiliary electrode and a second sub-auxiliary electrode, the metal routing includes a first routing and a third routing, a plurality of the first conductive pads are electrically connected to the first sub-auxiliary electrode through the first routing, and at least one of the second conductive pads is electrically connected to the second sub-auxiliary electrode through the third routing.

12. The packaging structure according to any one of claims 1 to 7, characterized in that: The packaging structure further includes a third adhesion layer located between the dielectric layer and the metal wiring layer, and the third adhesion layer includes a first adhesion electrode electrically connected to the auxiliary electrode and the metal wiring layer.

13. A packaging structure, characterized in that: The package structure has a first electronic component area and a second electronic component area, and includes: substrate; An auxiliary electrode layer, located on the substrate, wherein the auxiliary electrode layer includes a transition electrode; a dielectric layer, located on the auxiliary electrode layer, wherein the dielectric layer is provided with a first opening between the first electronic component region and the second electronic component region, and the first opening exposes a portion of the transition electrode; and A metal wiring layer is located on the dielectric layer. The metal wiring layer includes metal traces. The metal traces include a seed metal layer and a growth metal layer. The transition electrode is used to provide an auxiliary cathode voltage to the seed metal layer during the growth of the growth metal layer.

14. The packaging structure according to claim 13, characterized in that: The metal wiring layer includes multiple sub-wiring layers and a first insulating layer located between two adjacent sub-wiring layers. The metal routing is located in the sub-wiring layer close to the substrate side among the multiple sub-wiring layers. The first insulating layer is provided with a second opening between the first electronic component area and the second electronic component area, and the second opening exposes part of the transition electrode.

15. The packaging structure according to claim 13, characterized in that: The packaging structure further includes a second insulating layer and a soldering layer disposed on one side of the metal wiring layer, the second insulating layer is provided with a third opening between the first electronic component area and the second electronic component area, and the third opening exposes a portion of the transition electrode.

16. A packaged device, characterized in that: include: The packaging structure according to any one of claims 1 to 15.

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