Clipper, chip and receiver

Abstract

The application provides a clipper, a chip and a receiver. By designing the positions of the microstrip line and the diode unit in the clipper, the clipper can evenly distribute the power of the diode unit, and by synthesizing the output of the distributed power, the clipper can reduce the power loss and improve the power utilization rate of the input signal. By applying voltage to the diode unit, the clipper can widen the working frequency range by adjusting the junction capacitance of the diode unit. In addition, the application also provides a chip and a receiver comprising the clipper. Ultimately, the application can realize a clipper, a chip and a receiver with high power utilization rate, good power distribution performance and wide working frequency range.

Description

Technical Field

[0001] This invention relates to the field of integrated circuits, and in particular to a limiter, chip, and receiver. Background Technology

[0002] A limiter is an electronic device mainly used to control the amplitude of a signal within a predetermined range. By limiting the amplitude of the input signal, it compresses signals that are higher or lower than a threshold to within a set amplitude. Therefore, limiters are widely used in fields such as communication transmission, video and audio signal processing.

[0003] In the field of radio frequency (RF) communication, a limiter is an important nonlinear component that limits the amplitude of the output signal when the input power exceeds a certain threshold, thereby protecting the downstream receiver or amplifier from damage caused by high-power signals. However, in high-power RF circuits, power leakage can occur due to spatial electromagnetic coupling. This leakage leads to uneven power distribution among diodes, and when the transmitted power exceeds the diode's withstand voltage, the diode will burn out. Therefore, how to rationally distribute the power among the internal electronic components of the limiter has become one of the problems that urgently needs to be solved by those skilled in the art.

[0004] It should be noted that the above description of the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of the present invention and facilitating understanding by those skilled in the art. It should not be assumed that the above technical solutions are known to those skilled in the art simply because they have been described in the background section of this invention. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a limiter, chip and receiver to solve the problem of unreasonable power distribution of electronic components inside the limiter in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a limiter, which includes at least: a first microstrip line, a first-stage limiting module, and a fifth microstrip line; the first microstrip line receives and transmits radio frequency input signals; the input terminal of the first-stage limiting module is connected to the output terminal of the first microstrip line, including a first limiting path and a second limiting path connected in parallel; wherein, both the first limiting path and the second limiting path include a second microstrip line, a third microstrip line, and a fourth microstrip line connected in series, as well as a first diode unit and a second diode unit; the first microstrip line and the fourth microstrip line are located on opposite sides of the third microstrip line, and the first diode unit and the second diode unit are located on opposite sides of the third microstrip line; the first... Both the diode unit and the second diode unit include n diodes, where n is a natural number greater than or equal to 1. When n is greater than or equal to 2, all n diodes in the first and second diode units are connected in series in the same direction. The first terminal of the first diode unit is grounded, and the second terminal is connected to the output of the second microstrip line. The first terminal of the second diode unit is connected to the output of the third microstrip line, and the second terminal is grounded. The first terminal of both the first and second diode units is a positive terminal, and the second terminal is a negative terminal; or the first terminal of both the first and second diode units is a negative terminal, and the second terminal is a positive terminal. The first terminal of the fifth microstrip line is connected to the output terminal of the first-stage limiting module, and the second terminal serves as the output terminal of the limiter.

[0007] Optionally, both the first limiting path and the second limiting path further include a first inductor; the first end of the first inductor is connected to the second microstrip line, and the second end is grounded; the first inductor is located on either side of the third microstrip line.

[0008] Optionally, when n is greater than or equal to 2, the spacing between adjacent diodes in the first diode unit or the second diode unit decreases sequentially along the path from the third microstrip line to the ground line.

[0009] Optionally, the fifth microstrip line is located on an extension of the first microstrip line, and the first limiting path and the second limiting path are symmetrically distributed based on the first microstrip line.

[0010] Optionally, the fourth microstrip line in the first limiting path and the second limiting path includes a first part and a second part; the first end of the first part is connected to the output end of the third microstrip line, and the second end is connected to the first end of the second part; the second end of the second part serves as the output end of the first-level limiting module; the first microstrip line, the fifth microstrip line, and the first part of the fourth microstrip line are parallel; the second microstrip line is on the extension line of the third microstrip line and is perpendicular to the first microstrip line.

[0011] Optionally, the limiter further includes a second-stage limiting module, which includes a third diode unit and a fourth diode unit. The third diode unit and the fourth diode unit are connected in reverse. Both the third diode unit and the fourth diode unit include m diodes, where m is a natural number greater than or equal to 1. When m is greater than or equal to 2, the m diodes in the third diode unit and the fourth diode unit are connected in series in the same direction. The first end of the third diode unit is connected to the output terminal of the first-stage limiting module, and the second end is grounded. The first end of the fourth diode unit is grounded, and the second end is connected to the output terminal of the first-stage limiting module.

[0012] Optionally, the limiter further includes a second inductor connected between the output of the first-stage limiting module and the first end of the fifth microstrip line.

[0013] Optionally, the limiter further includes a third-level limiting module, which includes a fifth diode unit and a sixth diode unit. The fifth diode unit and the sixth diode unit are connected in reverse and located on both sides of the fifth microstrip line. Both the fifth diode unit and the sixth diode unit include p diodes, where p is a natural number greater than or equal to 1. When p is greater than or equal to 2, all p diodes in the fifth diode unit and the sixth diode unit are connected in series in the same direction. The first end of the fifth diode unit is connected to the fifth microstrip line, and the second end is grounded. The first end of the sixth diode unit is grounded, and the second end is connected to the fifth microstrip line.

[0014] Optionally, a first voltage is applied to one terminal of any diode in the first diode unit that is close to the ground wire, and a second voltage is applied to one terminal of any diode in the second diode unit that is close to the ground wire.

[0015] To achieve the above and other related objectives, the present invention also provides a chip, the chip comprising at least: a limiter.

[0016] To achieve the above and other related objectives, the present invention also provides a receiver, the receiver comprising at least: a limiter.

[0017] As described above, the limiter, chip, and receiver of the present invention have the following beneficial effects:

[0018] 1. By designing the spatial positions of the diode units and microstrip lines in the limiter, this invention can evenly distribute the power of the diode units in the limiter; by combining the power evenly distributed by the limiter before outputting it, this invention can improve the power utilization rate of the limiter.

[0019] 2. By adding an inductor to the asymmetric diode unit of the limiter, the present invention can better match the impedance of the limiter and reduce the loss during signal transmission.

[0020] 3. By providing an external voltage to one of the diodes in the diode unit that is closest to the ground wire, the present invention can adjust the junction capacitance of the diode unit to make the operating frequency of the limiter wider.

[0021] 4. By adjusting the spacing between adjacent diodes in the asymmetric diode unit, the present invention can balance the heat generation and dissipation of diodes at different positions. Attached Figure Description

[0022] Figure 1 The diagram shown is a circuit diagram of a symmetrical limiter.

[0023] Figure 2 The diagram shown is a first circuit diagram of the limiter of the present invention.

[0024] Figure 3 The diagram shown is a second circuit diagram of the limiter of the present invention.

[0025] Figure 4 The diagram shown is a third circuit diagram of the limiter of the present invention.

[0026] Figure 5 The diagram shown is a fourth circuit diagram of the limiter of the present invention.

[0027] Figure 6 The diagram shown is a fifth circuit diagram of the limiter of the present invention.

[0028] Figure 7 The diagram shown is a circuit layout of the chip of this invention.

[0029] Component designation explanation

[0030] 11 First Diode

[0031] 12 Second Diode

[0032] 13 Microstrip lines

[0033] 21 First microstrip line

[0034] 22 First-level limiting module

[0035] 23 Fifth microstrip line

[0036] 221 First Limiting Path

[0037] 222 Second Limiting Path

[0038] 22a Second microstrip line

[0039] 22b Third microstrip line

[0040] 22c Fourth microstrip line

[0041] 22d First Diode Unit

[0042] 22e Second Diode Unit

[0043] 22f First Inductor

[0044] 22g First voltage

[0045] 22h Second voltage

[0046] 24a Third Diode Unit

[0047] 24b Fourth Diode Unit

[0048] 25 Second Inductor

[0049] 26a Fifth Diode Unit

[0050] 26b Sixth Diode Unit Detailed Implementation

[0051] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] Please see Figures 1-7 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0053] like Figure 1 As shown, a symmetrical limiter is provided. The first diode 11 and the second diode 12 of the symmetrical limiter are symmetrically distributed based on the microstrip line 13. The purpose is to enable the first diode 11 and the second diode 12 to perform positive and negative symmetrical signal limiting. However, due to the power leakage caused by spatial coupling, the first diode 11 will withstand more power than the second diode 12. Therefore, in reality, the symmetrical limiter cannot achieve symmetrical positive and negative signal limiting.

[0054] To achieve a more rational power distribution among the electronic components in the limiter, this invention designs the spatial positioning of the diode units and microstrip lines within the limiter. This allows for an even distribution of the power from the diode units, and the signals from the diode units after power distribution are combined and output. This invention can improve the power utilization rate of the input signal. The specific solution of this invention is as follows:

[0055] Example 1

[0056] like Figure 2 As shown, this embodiment provides a limiter, which includes: a first microstrip line 21, a first-level limiting module 22, and a fifth microstrip line 23.

[0057] like Figure 2 As shown, the first microstrip line 21 receives and transmits radio frequency input signals.

[0058] Specifically, in this embodiment, the frequency of the radio frequency input signal is from 3kHz to 300GHz, including but not limited to 500kHz, 1MHz, 10MHz, 100MHz, 1GHz, 10GHz, 100GHz, and 200GHz. In practical applications, the frequency of the radio frequency input signal can be set as needed, and is not limited to this embodiment.

[0059] like Figure 2 As shown, the input terminal of the first-stage limiting module 22 is connected to the output terminal of the first microstrip line 21, including a first limiting path 221 and a second limiting path 222 connected in parallel.

[0060] Specifically, in this embodiment, the first-stage limiting module 22 receives the radio frequency input signal transmitted from the first microstrip line 21. The radio frequency input signal enters the first limiting path 221 and the second limiting path 222 respectively. The two signals are limited after passing through the two paths. Since the first limiting path 221 and the second limiting path 222 are connected in parallel, the two signals are combined and output through the fifth microstrip line 23. The power of the combined output signal is greatly preserved, which improves the power utilization rate of the radio frequency input signal.

[0061] like Figure 2 As shown, both the first limiting path 221 and the second limiting path 222 include a second microstrip line 22a, a third microstrip line 22b and a fourth microstrip line 22c connected in series, as well as a first diode unit 22d and a second diode unit 22e; the first microstrip line 21 and the fourth microstrip line 22c are located on both sides of the third microstrip line 22b, and the first diode unit 22d and the second diode unit 22e are located on both sides of the third microstrip line 22b.

[0062] Specifically, such as Figure 2As shown, in this embodiment, the first microstrip line 21 and the first diode unit 22d are located on the same side of the third microstrip line 22b and are arranged in parallel, and the second diode unit 22e and the first part of the fourth microstrip line 22c are located on the same side of the third microstrip line 22b and are parallel.

[0063] Specifically, both the first diode unit 22d and the second diode unit 22e include n diodes, where n is a natural number greater than or equal to 1. When n is greater than or equal to 2, the diodes of the first diode unit 22d and the second diode unit 22e are connected in series in the same direction; the first terminal of the first diode unit 22d is grounded, and the second terminal is connected to the output of the second microstrip line 22a; the first terminal of the second diode unit 22e is connected to the output of the third microstrip line 22b, and the second terminal is grounded; the first terminal of the first diode unit 22d and the second diode unit 22e are positive, and the second terminal is negative; or the first terminal of the first diode unit 22d and the second diode unit 22e are negative, and the second terminal is positive.

[0064] More specifically, in this embodiment, the diodes are connected in the same direction in series, meaning the anode of the nth diode is connected to the cathode of the (n-1)th diode, and the cathode of the nth diode is connected to the anode of the (n+1)th diode; or the cathode of the nth diode is connected to the anode of the (n-1)th diode, and the anode of the nth diode is connected to the cathode of the (n+1)th diode. In this embodiment, the first diode unit 22d performs negative limiting on the RF signal. The first terminal of the first diode unit 22d is grounded, and the second terminal is connected to the output of the second microstrip line. The second diode unit 22e performs positive limiting on the RF signal. The first terminal of the second diode unit 22e is connected to the output of the third microstrip line 22b, and the second terminal is grounded. The more diodes in the first diode unit 22d and the second diode unit 22e, the more significant the limiting effect of the limiter on the RF signal. In practical applications, the first diode unit 22d and the second diode unit 22e can be selected for positive or negative limiting of the RF signal as needed, and are not limited to this embodiment.

[0065] More specifically, in this embodiment, when n is greater than or equal to 2, the spacing between adjacent diodes in the first diode unit 22d is a first distance, or the spacing between adjacent diodes in the second diode unit 22e is a first distance. Along the path from the third microstrip line 22b to the ground line, the value of the first distance gradually decreases. This is because the closer to the ground line, the less heat loss the diodes experience. Therefore, reducing the spacing between adjacent diodes closer to the ground line not only improves heat dissipation of the diode unit but also facilitates the wiring of the limiter and improves the transmission efficiency of the radio frequency signal. In practical applications, the distance between adjacent diodes in the diode unit can be adjusted as needed, and is not limited to this embodiment.

[0066] In another implementation of this embodiment, the fourth microstrip line 22c in the first limiting path 221 and the second limiting path 222 includes a first part and a second part; the first end of the first part is connected to the output end of the third microstrip line 22b, the second end of the first part is connected to the first end of the second part, and the second end of the second part serves as the output end of the first-stage limiting module; the first microstrip line 21, the fifth microstrip line 23 are parallel to the first part of the fourth microstrip line 22c; the second microstrip line 22a is located on the extension line of the third microstrip line 22b and is perpendicular to the first microstrip line 21. Figure 2 As shown, in this embodiment, the second part of the fourth microstrip line 22c is a broken line. In practical applications, the second part of the fourth microstrip line 22c can also be a straight line, and is not limited to this embodiment.

[0067] In radio frequency circuits, the larger the vertical projection area of ​​one electronic device onto another, the higher the probability of resonance between the two devices. Therefore, devices positioned on the same side are prone to resonance and power leakage. In this embodiment, the first microstrip line 21 resonates with the first diode unit 22d, and a portion of the power of the first microstrip line 21 leaks into the first diode unit 22d. The second diode unit 22e resonates with the first portion of the fourth microstrip line 22c, and a portion of the power of the first portion of the fourth microstrip line 22c leaks into the second diode unit 22e. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range. This achieves the goal of evenly distributing the power of the first diode unit 22d and the second diode unit 22e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In practical applications, the value of the preset range can be set as needed and is not limited to this embodiment.

[0068] like Figure 2 As shown, the first end of the fifth microstrip line 23 is connected to the output of the first-stage limiting module, and the second end serves as the output of the limiter.

[0069] Specifically, in this embodiment, the fifth microstrip line 23 is located on the extension line of the first microstrip line 21, and the first limiting path 221 and the second limiting path 222 are symmetrically distributed based on the first microstrip line 21, that is, the first limiting path 221 and the second limiting path 222 are symmetrical about the straight line connecting the first microstrip line 21 and the fifth microstrip line 23. As an example, such as Figure 2As shown, the second microstrip line 22a of the first limiting path 221 and the second limiting path 222 are symmetrically distributed based on the first microstrip line 21; the first diode unit 22d of the first limiting path 221 and the second limiting path 222 is symmetrically distributed based on the first microstrip line 21; the third microstrip line 22b of the first limiting path 221 and the second limiting path 222 is symmetrically distributed based on the first microstrip line 21; the second diode unit 22e of the first limiting path 221 and the second limiting path 222 is symmetrically distributed based on the first microstrip line 21; and the fourth microstrip line 22c of the first limiting path 221 and the second limiting path 222 is symmetrically distributed based on the first microstrip line 21.

[0070] Example 2

[0071] like Figure 3 As shown, this embodiment provides a limiter. The difference between this embodiment and the first embodiment is that the spatial positions of the first diode unit 22d and the second diode unit 22e are different.

[0072] Specifically, such as Figure 3 As shown, the first microstrip line 21 and the second diode unit 22e are located on the same side and arranged in parallel, and the first diode unit 22d and the first part of the fourth microstrip line 22c are located on the same side and arranged in parallel. In this embodiment, the first microstrip line 21 and the second diode unit 22e resonate, and a portion of the power of the first microstrip line 21 leaks into the second diode unit 22e. The first diode unit 22d and the first part of the fourth microstrip line 22c resonate, and a portion of the power of the first part of the fourth microstrip line 22c leaks into the first diode unit 22d. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range to overcome the problem of uneven power distribution between the first diode unit 22d and the second diode unit 22e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In practical applications, the value of the preset range can be set as needed, and is not limited to this embodiment.

[0073] Example 3

[0074] like Figure 4As shown, this embodiment provides a limiter. The difference between this embodiment and embodiments one and two is that the first limiting path 221 and the second limiting path 222 of this embodiment further include a first inductor 22f; the first end of the first inductor 22f is connected to the second microstrip line 22a, and the second end is grounded; the first inductor 22f is located on any side of the third microstrip line 22b.

[0075] Specifically, in this embodiment, the purpose of setting the first inductor 22f is to perform impedance matching between the first limiting path 221 and the second limiting path 222, thereby reducing the transmission loss of the limiter.

[0076] As an example, such as Figure 4 As shown, the first microstrip line 21 and the first diode unit 22d are located on the same side of the third microstrip line 22b and are arranged in parallel. The second diode unit 22e, the first inductor 22f, and the first part of the fourth microstrip line 22c are located on the same side of the third microstrip line 22b and are arranged in parallel. Specifically, the first microstrip line 21 and the first diode unit 22d resonate, and a portion of the power of the first microstrip line 21 leaks into the first diode unit 22d. The second diode unit 22e, the first inductor 22f, and the first part of the fourth microstrip line 22c resonate, and a portion of the power of the first inductor 22f and the first part of the fourth microstrip line 22c leaks into the second diode unit 22e. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range, thereby achieving the purpose of reasonably distributing the power of the first diode unit 22d and the second diode unit 22e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In practical applications, the value of the preset range can be set as needed, and is not limited to this embodiment.

[0077] As another example, such as Figure 5As shown, the first inductor 22f, the first microstrip line 21, and the first diode unit 22d are located on the same side of the third microstrip line 22b and arranged in parallel. The second diode unit 22e and the first part of the fourth microstrip line 22c are located on the same side of the third microstrip line 22b and arranged in parallel. The first inductor 22f, the first microstrip line 21, and the first diode unit 22d resonate, and a portion of the power of the first inductor 22f and the first microstrip line 21 leaks into the first diode unit 22d. The second diode unit 22e resonates with the first part of the fourth microstrip line 22c, and a portion of the power of the first part of the fourth microstrip line 22c leaks into the second diode unit 22e. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range, thereby achieving the purpose of reasonably distributing the power of the first diode unit 22d and the second diode unit 22e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In practical applications, the value of the preset range can be set as needed, and is not limited to this embodiment.

[0078] It should be noted that in practical applications, the first inductor 22f can also be set on either side of the third microstrip line 22b in Embodiment 2, and the positions of the first inductor 22f, the first diode unit 22d, and the second diode unit 22e can be set as needed, which will not be described in detail here.

[0079] Example 4

[0080] This embodiment provides a limiter 1. The difference between this embodiment and embodiments one to three is that:

[0081] like Figure 6 As shown, a first voltage 22g is applied to one terminal of any diode in the first diode unit 22d that is close to the ground wire, or a second voltage 22h is applied to one terminal of any diode in the second diode unit 22e that is close to the ground wire.

[0082] Specifically, in this embodiment, a first voltage 22g is applied to the terminal of any diode in the first diode unit 22d of the first limiting path 221 and the second limiting path 222 near the ground line. The first voltage 22g can be positive or negative and is symmetrical about the first microstrip line 21. When the first voltage 22g is applied, the overall junction capacitance of the first diode unit 22d can be freely adjusted, thus increasing the operating frequency bandwidth of the limiter. Correspondingly, in this embodiment, a second voltage 22h is applied to the terminal of any diode in the second diode unit 22e of the first limiting path 221 and the second limiting path 222 near the ground line. The second voltage 22h can be positive or negative and is symmetrical about the first microstrip line 21. The overall junction capacitance of the second diode unit 22e can be freely adjusted, thus further increasing the operating frequency bandwidth of the limiter. In practical applications, the first voltage 22g and the second voltage 22h can be applied simultaneously or selectively in the limiter as needed, and are not limited to this embodiment.

[0083] like Figure 6 As shown, the limiter also includes a second-stage limiting module, which includes a third diode unit 24a and a fourth diode unit 24b. The first terminal of the third diode unit 24a and the fourth diode unit 24b is positive and the second terminal is negative, or the first terminal of the third diode unit 24a and the fourth diode unit 24b is negative and the second terminal is positive. Both the third diode unit 24a and the fourth diode unit 24b include m diodes, where m is a natural number greater than or equal to 1. When m is greater than or equal to 2, the diodes of the third diode unit 24a and the fourth diode unit 24b are connected in series in the same direction. The first terminal of the third diode unit 24a is connected to the output terminal of the first-stage limiting module, and the second terminal is grounded. The first terminal of the fourth diode unit 24b is grounded, and the second terminal is connected to the output terminal of the first-stage limiting module.

[0084] Specifically, in this embodiment, the third diode unit 24a and the fourth diode unit 24b of the second-level limiting module are symmetrical based on the first microstrip line 21. When the power of the RF input signal is too high, the second limiting module can protect the circuit and suppress noise.

[0085] like Figure 6As shown, the limiter also includes a third-level limiting module, which includes a fifth diode unit 26a and a sixth diode unit 26b. The fifth diode unit 26a and the sixth diode unit 26b are reverse-connected and located on both sides of the fifth microstrip line 23. Both the fifth diode unit 26a and the sixth diode unit 26b include p diodes, where p is a natural number greater than or equal to 1. When p is greater than or equal to 2, the diodes of the fifth diode unit 26a and the sixth diode unit 26b are connected in series in the same direction. The first end of the fifth diode unit 26a is connected to the fifth microstrip line, and the second end is grounded. The first end of the sixth diode unit 26b is grounded, and the second end is connected to the fifth microstrip line 23.

[0086] Specifically, in this embodiment, the fifth diode unit 26a and the sixth diode unit 26b of the third-level limiting module are symmetrical based on the fifth microstrip line 23. When the power of the RF input signal is too high, the third limiting module can protect the circuit and suppress noise.

[0087] like Figure 6 As shown, the limiter also includes a second inductor 25, which is connected between the output terminal of the first-stage limiting module 22 and the first terminal of the fifth microstrip line 23.

[0088] Specifically, in this embodiment, the second inductor 25 can be used to match the impedance between the first-stage limiting module 22 and the fifth microstrip line 23, thereby improving the signal transmission efficiency.

[0089] Example 5

[0090] This embodiment provides a chip, which includes the limiters of Embodiments 1 to 4.

[0091] Specifically, the chip in this embodiment can prevent signal distortion and improve signal anti-interference capabilities in the fields of audio, video, and communication; as an example, such as Figure 7 As shown, this embodiment provides a circuit layout diagram of a limiter chip. The fifth microstrip line 23 is on the extension line of the first microstrip line 21. The first limiting path 221 and the second limiting path 222 are symmetrical based on the first microstrip line 21. The first diode unit 22d and the second diode unit 22e each include 3 diodes, and the distance between adjacent diodes gradually decreases on the path from the third microstrip line 22b to the ground line. The first diode unit 22d and the fourth microstrip line 22c are located on the same side of the third microstrip line 22b, and the second diode unit 22e, the first inductor 22f, and the first microstrip line 21 are located on the same side of the third microstrip line 22b.

[0092] Example 6

[0093] This embodiment provides a receiver, which includes: the limiters of Embodiments 1 to 4.

[0094] Specifically, in this embodiment, the receiver is a radar receiver, and the limiter can prevent high-power signals from damaging the radar receiver; the electromagnetic characteristics of the receiver can be changed by changing parameters such as the phase, frequency and power of the input signal.

[0095] In summary, this invention designs a spatially asymmetrical limiter, and then combines the limited signals for output. This invention balances heat dissipation of diodes at different positions by adjusting the spacing of the asymmetrical diode units, reduces transmission loss by adding inductors to the asymmetrical diode units, and provides an external voltage to the diode units, thus widening the operating frequency range of the limiter. This invention also incorporates a multi-stage limiting module to protect the limiter circuit. Ultimately, this invention improves the power utilization of the limiter, extends its operating frequency range, and reduces power loss. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0096] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A limiter, characterized in that, The limiter includes at least: First microstrip line, first-level limiting module and fifth microstrip line; The first microstrip line receives and transmits radio frequency input signals; The input terminal of the first-stage limiting module is connected to the output terminal of the first microstrip line, and includes a first limiting path and a second limiting path connected in parallel. Each of the first and second limiting paths includes a second, third, and fourth microstrip line connected in series, as well as a first diode unit and a second diode unit. The first and fourth microstrip lines are located on opposite sides of the third microstrip line, and the first and second diode units are located on opposite sides of the third microstrip line. Each of the first and second diode units includes n diodes, where n is a natural number greater than or equal to 1. When n is greater than or equal to 2, all n diodes in the first and second diode units are connected in series in the same direction. The first terminal of the first diode unit is grounded, and the second terminal is connected to the... The output of the second microstrip line; the first end of the second diode unit is connected to the output of the third microstrip line, and the second end is grounded; the first end of the first diode unit and the second diode unit are positive terminals and the second end is negative terminal; or the first end of the first diode unit and the second diode unit are negative terminals and the second end is positive terminal. The first end of the fifth microstrip line is connected to the output of the first-stage limiting module, and the second end serves as the output of the limiting device.

2. The limiter according to claim 1, characterized in that: Both the first limiting path and the second limiting path further include a first inductor; the first end of the first inductor is connected to the second microstrip line, and the second end is grounded; the first inductor is located on either side of the third microstrip line.

3. The limiter according to claim 1, characterized in that: When n is greater than or equal to 2, the spacing between adjacent diodes in the first diode unit or the second diode unit decreases sequentially along the path from the third microstrip line to the ground line.

4. The limiter according to claim 1, characterized in that: The fifth microstrip line is located on the extension line of the first microstrip line, and the first limiting path and the second limiting path are symmetrically distributed based on the first microstrip line.

5. The limiter according to claim 1 or 4, characterized in that: The fourth microstrip line in the first and second limiting paths includes a first part and a second part; the first end of the first part is connected to the output end of the third microstrip line, and the second end is connected to the first end of the second part; the second end of the second part serves as the output end of the first-stage limiting module. The first microstrip line, the fifth microstrip line, and the first portion of the fourth microstrip line are parallel; The second microstrip line is located on the extension line of the third microstrip line and is perpendicular to the first microstrip line.

6. The limiter according to claim 1, characterized in that: The limiter also includes a second-stage limiting module, which includes a third diode unit and a fourth diode unit. The third diode unit and the fourth diode unit are connected in reverse. Both the third diode unit and the fourth diode unit include m diodes, where m is a natural number greater than or equal to 1. When m is greater than or equal to 2, the m diodes in the third diode unit and the fourth diode unit are connected in series in the same direction. The first end of the third diode unit is connected to the output end of the first-stage limiting module, and the second end is grounded. The first end of the fourth diode unit is grounded, and the second end is connected to the output end of the first-stage limiting module.

7. The limiter according to claim 1, characterized in that: The limiter also includes a second inductor, which is connected between the output of the first-stage limiting module and the first end of the fifth microstrip line.

8. The limiter according to claim 1, characterized in that: The limiter also includes a third-level limiting module, which includes a fifth diode unit and a sixth diode unit. The fifth diode unit and the sixth diode unit are connected in reverse and located on both sides of the fifth microstrip line. Both the fifth diode unit and the sixth diode unit include p diodes, where p is a natural number greater than or equal to 1. When p is greater than or equal to 2, all p diodes in the fifth diode unit and the sixth diode unit are connected in series in the same direction. The first end of the fifth diode unit is connected to the fifth microstrip line, and the second end is grounded. The first end of the sixth diode unit is grounded, and the second end is connected to the fifth microstrip line.

9. The limiter according to claim 1, characterized in that: A first voltage is applied to one terminal of any diode in the first diode unit that is close to the ground wire, and a second voltage is applied to one terminal of any diode in the second diode unit that is close to the ground wire.

10. A chip, characterized in that, The chip includes at least one of the following: a limiter based on any one of claims 1-8.

11. A receiver, characterized in that, The receiver includes at least one of the following: a limiter based on any one of claims 1-8.

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