Multifunctional organic memristor based on switching bridge distribution strategy and preparation method and application thereof

Abstract

The application provides a multifunctional organic memristor based on a conversion bridge distribution strategy and a preparation method and application thereof, and belongs to the technical field of organic memristors.The conversion bridge distribution strategy proposed in the application is to select an elastomer with high compatibility and an organic semiconductor with strong interaction force with active metal ions (such as aluminum ions, silver ions, copper ions and the like), and to prepare an organic functional layer with a phase separation structure close to thermodynamic equilibrium through simple physical blending.By further adjusting the content of the organic semiconductor material in the organic functional layer, the types of conductive paths in the functional layer are precisely controlled, and dual-mode neuromorphic signal processing is realized in the same material system.The application proposes a strategy for a stretchable organic memristor with universality, fine adjustment of the types of conductive paths, high preparation yield, high stability, multi-modal signal processing, and the like, and provides a new idea for the development of wearable devices with biological compatibility and artificial intelligence applications.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of organic memristor, in particular to a multifunctional organic memristor based on a conversion bridge distribution strategy and a preparation method and application thereof. BACKGROUND

[0002] In the era of rapid development of Internet of Things, big data and artificial intelligence, memristors are used to simulate the neural network of the human brain to realize parallel computing and storage-computing integration. This technology is expected to solve the problems of high power consumption and delayed storage of the von Neumann architecture data system based on the separation of storage and computing. With the development of neuromorphic devices and the expansion of practical application scenarios, memristors are expected to be applicable to high-performance chips, brain-computer interfaces, electronic skin, wearable devices and medical diagnosis, etc. This also puts forward higher requirements for the research and development of memristors: in addition to excellent and stable electrical properties, memristors also need to have mechanical adaptability of multiple mechanical deformations, such as being able to withstand external forces such as stretching and twisting. In order to develop memristors with stable electrical properties and good mechanical tensile properties, organic materials, which have the advantages of softness, lightness, easy-to-adjust structure, solution processing, good biocompatibility, etc., have become one of the most promising materials for preparing stretchable memristor functional layers.

[0003] The main limitation of current stretchable organic memristors is the difficulty in effectively controlling the formation and collapse of multiple conductive pathways, resulting in low productivity, poor uniformity, poor stability and simple function of the device. In order to solve this problem, researchers have made many efforts. For example, from the aspect of improving stretchability, flexible segments are introduced into the main chain or side chain of the current research more polyfluorene, polyimide and other organic memristor layer materials to obtain intrinsic stretchable block polymers. Based on these new materials, the memristor realizes the storage behavior of one-time writing, multiple reading (WORM) type, erasable (Flash) type, etc. However, these materials are prone to irreversible plastic deformation and do not have the excellent mechanical properties of elastomers; in terms of conductive pathway control, inorganic conductive materials such as metal nanoparticles and liquid metals are physically blended with elastomers with excellent mechanical properties, and the distribution of conductive materials in the elastomer is regulated by applying an external bias to construct stretchable memristors. However, one of the main problems in the blending process of inorganic conductive materials and elastomers is the compatibility of the materials. Because inorganic conductive materials and elastomers usually have different chemical properties and molecular structures, they may repel each other or be difficult to disperse uniformly when blended. This situation leads to phase separation in the vertical direction of the blended film, which is caused by thermodynamic imbalance, resulting in unstable performance and poor reliability of the memristor based on it. In addition, the types of stretchable organic memristors reported so far are few, and the stability of the comprehensive electrical properties of the device is poor. These memristors often exhibit single memristive behavior, making it difficult to achieve complex multi-modal signal processing, and the functionality is still lacking. At the same time, the existing working mechanism is usually specific to a specific structure of a specific system, and lacks universality. Therefore, a strategy for stretchable organic memristors with universality, fine adjustment of conductive pathway types, high yield and stability, and multi-modal signal processing is needed to further promote the development of biocompatible wearable devices and artificial intelligence applications. SUMMARY

[0004] The present application proposes a new conversion bridge distribution strategy to solve the problem of serious phase separation and single function caused by poor compatibility between components in the method of physically blending to realize stretchable organic functional layer. By blending organic semiconductors with elastomers with suitable compatibility, the organic semiconductors form conversion bridges and the elastomers provide excellent mechanical properties as matrix materials to prepare an organic functional layer with a continuous distribution of phase separation structure in the longitudinal direction. Due to the suitable compatibility, the phase separation structure of the blended film is close to thermodynamic equilibrium and has high stability, and based on this type of organic functional layer, a multifunctional organic memristor is constructed.

[0005] In order to achieve the above purpose, the present application provides the following technical solutions:

[0006] One of the technical solutions of the present application is an organic functional layer, comprising an organic semiconductor material and an elastomer material; the organic semiconductor material is selected from at least one of poly[2,5-bis(3-tetradecylthiophene-2-yl)thiophene], poly(3,5-pyridine), poly(N-vinylcarbazole), polycarbazole phosphoric acid and triphenyl phosphate; the elastomer material is selected from at least one of polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene, polystyrene butadiene copolymer, polyisobutylene and chlorobutyl rubber;

[0007] The proportion of the organic semiconductor material in the total of the organic semiconductor material and the elastomer material is 5-50 wt%.

[0008] The second technical solution of the present application is a multifunctional organic memristor based on a conversion bridge distribution strategy, comprising the above organic functional layer.

[0009] The third technical solution of the present application is a preparation method of the above multifunctional organic memristor based on a conversion bridge distribution strategy, comprising the following steps:

[0010] Step 1: preparing a bottom electrode on a substrate by a vacuum evaporation method;

[0011] Step 2: dissolving the organic semiconductor material and the elastomer material in a solvent, then coating the obtained solution on the surface of the bottom electrode, and then annealing to obtain an organic functional layer;

[0012] Step 3: preparing a top electrode on the organic functional layer by a vacuum evaporation method.

[0013] The fourth technical solution of the present application is an application of the above multifunctional organic memristor based on a conversion bridge distribution strategy in biocompatible wearable devices and artificial intelligence.

[0014] The present application discloses the following technical effects:

[0015] Based on the conversion bridge distribution strategy, the present application selects an elastomer with high compatibility and an organic semiconductor with strong interaction force with active ions (such as aluminum ions, silver ions and copper ions), and through simple solution blending, a vertically thermodynamically balanced organic functional layer of the memristor with excellent mechanical properties and electrical properties is obtained, the elastic recovery rate of the organic functional layer is more than 95%, and the electrical properties remain stable after 1000 cycles of cyclic stretching under 100% strain. At the same time, by finely adjusting the content of the organic semiconductor material in the functional layer, the types of conductive paths in the functional layer can be accurately controlled, the volatile and non-volatile electrical behaviors are realized in the same material system, and then the dual-mode neural morphological signal processing is realized.

[0016] The application provides a strategy of a stretchable organic memristor with universality, fine adjustment of a conductive path type, high preparation yield, high stability and multi-modal signal processing, and is expected to further promote the development of biocompatible wearable devices and artificial intelligence applications. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort on the basis of these drawings.

[0018] Figure 1 FIG. 1 is a structural schematic diagram of a memristor based on a conversion bridge distribution strategy in Embodiment 1 of the present application;

[0019] Figure 2 FIG. 2 is a device cross-sectional TEM diagram and a structural schematic diagram of a functional layer of a memristor based on a conversion bridge distribution strategy in Embodiment 1 of the present application;

[0020] Figure 3 FIG. 3 is an upper and lower surface topography diagram (a) and an organic semiconductor material distribution schematic diagram in a vertical direction of a film (b) formed by blending different content organic semiconductor materials and elastomers prepared in Embodiment 1 of the present application;

[0021] Figure 4 FIG. 4 is a stress-strain curve (a) of a film formed by blending different content organic semiconductor materials and elastomers prepared in Embodiment 1 of the present application, and a cyclic tensile curve (b) and (c) of a film formed by blending 10wt% organic semiconductor materials and 90wt% elastomers;

[0022] Figure 5 FIG. 5 is a current-voltage curve diagram of an organic memristor constructed based on a film formed by blending different content organic semiconductor materials and elastomers in Embodiment 1 of the present application;

[0023] Figure 6 FIG. 6 is a resistance state retention characteristic (a) and a production rate (b) of an organic memristor constructed based on a film formed by blending different content organic semiconductor materials and elastomers in Embodiment 1 of the present application;

[0024] Figure 7 FIG. 7 is a working principle diagram of an organic memristor constructed based on a film formed by blending 10wt% (a) and 50wt% (b) organic semiconductor materials and elastomers in Embodiment 1 of the present application;

[0025] Figure 8Current-voltage curve of the organic memristor based on the thin film formed by blending 10 wt% organic semiconductor material and elastomer in Example 1 of the present application under loading (a) and unloading (b) different strains and after multiple cycles of tensile stretching at 100% strain (c);

[0026] Figure 9 Detection rate of the all-analog RC hardware system integrated with the multifunctional organic memristor based on the conversion bridge distribution strategy in Example 1 of the present application in the task of online arrhythmia detection;

[0027] Figure 10 Current-voltage curve of the organic memristor based on the thin film formed by blending different content of organic semiconductor material DPPT-TT and elastomer SEBS in Comparative Example 1 of the present application;

[0028] Figure 11 Current-voltage curve of the organic memristor based on the thin film formed by blending different content of organic semiconductor material PF8 and elastomer SEBS in Comparative Example 2 of the present application;

[0029] Figure 12 Current-voltage curve of the organic memristor based on the thin film formed by blending different content of organic semiconductor material liquid metal and elastomer PDMS in Comparative Example 3 of the present application. DETAILED DESCRIPTION

[0030] Various exemplary embodiments of the present application will now be described in detail, which should be considered to be illustrative of the present application and should not be construed to limit the scope of the present application, and are understood to be a further description of certain aspects, features and embodiments of the present application.

[0031] It should be understood that the terms used in the present application merely describe particular embodiments and are not intended to limit the present application. In addition, for numerical ranges in the present application, it should be understood that each intermediate value between the upper limit and the lower limit of the range is specifically disclosed. Each smaller range between any stated value or intervening value in any stated range, and any other stated value or intervening value in stated ranges is also encompassed within the application. The upper and lower limits of these smaller ranges can independently be included or excluded in the ranges.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present application, preferred methods and materials are described. All publications mentioned in this specification are herein incorporated by reference to disclose and describe the methods and / or materials in connection with which the publications are cited. The citation of any reference in this specification is not intended to constitute an admission that the reference is prior art or that this specification is not entitled to an antedate the reference by virtue of prior application. All literature and similar materials cited in this application, including but not limited to, patents, patent applications, articles, books, treatises, and the like, regardless of the date of publication or invention, are hereby incorporated by reference herein.

[0033] Many modifications and variations to the illustrative embodiments described herein will be apparent to those of ordinary skill in the art from the foregoing description. Such modifications and variations are intended to fall within the scope of the present application. Other embodiments will be apparent to those of ordinary skill in the art from consideration of the description and practice of the present application. The description and examples are illustrative only.

[0034] As used herein, the terms "comprises", "comprising", "includes", "including", "has", "having" or the like are open-ended expressions that are intended to denote the presence of stated features, elements, integers, steps or the like, but do not preclude the presence or addition of one or more other features, elements, integers, steps, acts, objects, binaries or the like.

[0035] The conversion bridge distribution strategy proposed in the present application is to select an organic semiconductor with high compatibility and strong interaction force with active metal ions (such as aluminum ions, silver ions, copper ions, etc.) to prepare an organic functional layer with a phase separation structure close to thermodynamic equilibrium through simple physical blending. By further adjusting the content of the organic semiconductor material in the functional layer, the types of conductive paths in the functional layer are precisely controlled, and dual-mode neuromorphic signal processing is achieved in the same material system. The content of the organic semiconductor material in the organic functional layer has a significant impact on the mechanical and electrical properties of the functional layer. At a suitable ratio, the functional layer exhibits excellent mechanical properties, with high elongation at break and good elasticity. At the same time, the electrical behavior of the memristor constructed based on this is closely related to the content of the organic semiconductor material. By adjusting the content of the organic semiconductor material, both volatile and non-volatile electrical behaviors can be achieved in the same system, and the electrical performance does not decrease after 1000 cycles of cyclic stretching at 100% strain in subsequent stretching cycle tests. The volatile and non-volatile modes of the multifunctional organic memristor based on the conversion bridge distribution strategy are integrated into the dynamic neuron network and the linear regression layer of the reservoir computing (RC), respectively, to demonstrate a fully analog RC hardware system, which successfully achieves high-precision detection of online arrhythmia.

[0036] The technical scheme of the present application is as follows:

[0037] The first aspect of the present application provides an organic functional layer comprising an organic semiconductor material and an elastomer material; the organic semiconductor material is selected from at least one of poly[2,5-bis(3-tetradecylthiophene-2-yl)thiophene], poly(3,5-pyridine), poly(N-vinylcarbazole), polycarbazole phosphoric acid and triphenyl phosphate; the elastomer material is selected from at least one of polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene, polystyrene butadiene copolymer, polyisobutylene and chlorobutyl rubber.

[0038] The proportion of the organic semiconductor material in the total of the organic semiconductor material and the elastomer material is 5-50wt%.

[0039] The organic semiconductor material provided by the application has high compatibility with the elastomer material, and the selected organic semiconductor material needs to have strong interaction force with active ions such as aluminum ions, silver ions and copper ions. By using different blending ratios of the organic semiconductor material and the elastomer, the electrical performance and mechanical performance of the final organic functional layer can change with the change of the blending ratio.

[0040] The second aspect of the application provides a multifunctional organic memristor based on a conversion bridge distribution strategy, comprising the organic functional layer in the technical solution.

[0041] In some embodiments of the application, the multifunctional organic memristor based on the conversion bridge distribution strategy further comprises a bottom electrode and a top electrode; and the organic functional layer is located between the bottom electrode and the top electrode.

[0042] In some embodiments of the application, the thickness of the bottom electrode is 30 nm; the thickness of the organic functional layer is 30-50 nm; and the thickness of the top electrode is 30 nm.

[0043] In the application, an excessively thin functional layer is easy to be broken down, resulting in damage of the device, and an excessively thick functional layer behaves as a single resistance state, and an external bias voltage is difficult to drive the migration of conductive substances in the functional layer. Therefore, the thickness of the organic functional layer in the application is preferably in the above parameter range.

[0044] In some embodiments of the application, the bottom electrode is an active metal electrode, such as an aluminum electrode, a silver electrode or a copper electrode; and the top electrode is an inert metal electrode, such as a gold electrode or a platinum electrode.

[0045] The third aspect of the application provides a preparation method of the multifunctional organic memristor based on the conversion bridge distribution strategy in the above technical solution, comprising the following steps:

[0046] Step 1: preparing a bottom electrode on a substrate by using a vacuum evaporation method;

[0047] Step 2: dissolving an organic semiconductor material and an elastomer material in a solvent, coating the obtained solution on the surface of the bottom electrode, and then annealing to obtain an organic functional layer;

[0048] Step 3: preparing a top electrode on the organic functional layer by using a vacuum evaporation method.

[0049] The selection of the substrate material in the application is not specially limited, and a conventional substrate material in the technical field can be selected, for example, a heavily doped n-type monocrystalline silicon or glass with a surface thermal growth of 300 nm SiO2.

[0050] In some embodiments of the application, in step 1, the parameter setting of the vacuum evaporation method is that the vacuum evaporation rate is 0.1-0.5 A / s.

[0051] In step 2, the total concentration of the organic semiconductor material and the elastomer material in the solution is 8-10 mg / mL.

[0052] In step 3, the parameters of the vacuum evaporation method are set as follows: the vacuum evaporation rate is 0.1-0.2 A / s, the vacuum evaporation thickness is 100-200 nm, and the vacuum evaporation rate is 0.1-0.2 A / s.

[0053] In some embodiments of the present application, the annealing temperature is 90-120℃, and the annealing time is 20 min.

[0054] The fourth aspect of the present application provides an application of the above multifunctional organic memristor based on the conversion bridge distribution strategy in biocompatible wearable devices and artificial intelligence.

[0055] In order to better understand the present application, the content of the present application is further illustrated below in combination with examples, but the content of the present application is not limited only to the following examples.

[0056] The structural schematic diagram of the multifunctional organic memristor based on the conversion bridge distribution strategy is shown in FIG. 1. Figure 1 In the figure, the top electrode is an inert electrode, the bottom electrode is an active electrode, Elastomer refers to an elastomer, and Semiconductor refers to an organic semiconductor having a strong interaction force with active ions such as aluminum ions, silver ions, and copper ions.

[0057] The substrate materials used in the examples are all heavily doped n-type single crystal silicon with a 300 nm SiO2 surface thermal growth.

[0058] Example 1

[0059] In this example, the organic semiconductor material is selected as poly[2,5-bis(3-tetradecylthiophene-2-yl) thiophene] (PBTTT, CAS: 888491-19-8, Lot No.: Alpha A491198), and the elastomer is selected as polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aldrich 200557).

[0060] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0061] 1) The substrate is sequentially cleaned with water, acetone, and isopropanol by ultrasonic cleaning, each solvent is ultrasonically cleaned twice, each time for 10 minutes, and then dried with nitrogen, and dried in an oven at 120℃ for 5 minutes;

[0062] 2) 30 nm thick active metal aluminum was vacuum evaporated on the substrate as the bottom electrode, wherein the mask plate was a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm;

[0063] 3) The organic semiconductor material PBTTT and the elastomer SEBS were respectively dissolved to form a solution, and then solution mixing was carried out at 100°C to obtain a mixed solution, wherein the total concentration of the organic semiconductor material PBTTT and the elastomer SEBS in the mixed solution was 8 mg / mL;

[0064] 4) The mixed solution was spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere at a rotation speed of 1000 rpm, and the obtained film was annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD), with a thickness of 30 nm;

[0065] The surface morphology of the organic functional layer is shown in Figure 3 , and in the vertical direction, the organic semiconductor material PBTTT is continuously distributed in the elastomer SEBS-based film. The mechanical property curve is shown in Figure 4 When the organic semiconductor material PBTTT accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material and the elastomer, i.e. the organic functional layer is represented as ECBD-5 to ECBD-50, the elongation at break of the organic functional layer is higher than 250%, far exceeding the requirement of 100% elongation at break in current practical applications. In addition, when the organic semiconductor material PBTTT accounts for 10wt% of the total amount of the organic semiconductor material and the elastomer, i.e. the organic functional layer is represented as ECBD-10, the elongation at break is higher than 300%, and the elastic recovery rate remains above 95% under all strains, with excellent elasticity and toughness;

[0066] 5) 30 nm thick inert metal gold was vacuum evaporated on the organic functional layer as the top electrode, wherein the mask plate was a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, to obtain a multifunctional organic memristor.

[0067] The electrical properties of the multifunctional organic memristor are shown in Figure 5 , 6As shown in FIG. 8, on one hand, fine adjustment of the content of the organic semiconductor material PBTTT in the blended film can realize both volatile and non-volatile electrical behaviors in the same system: the organic memristor based on the blended film of ECBD-5 and ECBD-10 presents erasable non-volatile electrical behavior, and when the content of the organic semiconductor material PBTTT is continuously increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the blended film of ECBD-50 presents volatile electrical behavior; on the other hand, the electrical performance of the blended film of ECBD-10 remains unchanged under different strains loaded and unloaded in the range of 100% strain, and the electrical performance of the blended film can remain unchanged after 1000 cycles of cyclic stretching under 100% strain.

[0068] Example 2

[0069] The organic semiconductor material in this example is selected as poly(3,5-pyridine) (P35P, CAS: 97702-63-1, Lot No.: Sigma-Aldrich 590487), and the elastomer is selected as polystyrene butadiene copolymer (SBR, CAS: 9003-55-8, Lot No.: Sigma-Aldrich 430072).

[0070] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0071] 1) The substrate is sequentially subjected to ultrasonic cleaning with water, acetone and isopropanol, each solvent is subjected to ultrasonic cleaning for 2 times, each time for 10 minutes, and then dried with nitrogen blowing, and dried in an oven at 120°C for 5 minutes;

[0072] 2) 30nm-thick active metal aluminum is vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate is a crossbar-type electrode with a line width of 50μm and a line spacing of 750μm;

[0073] 3) The organic semiconductor material P35P and the elastomer SBR are respectively dissolved to form a solution, and then mixed under the condition of 100°C to obtain a mixed solution (the organic semiconductor material P35P accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material P35P and the elastomer SBR, and the total concentration of the organic semiconductor material P35P and the elastomer SBR in the mixed solution is 8mg / mL);

[0074] 4) The mixed solution is spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere at a rotation speed of 1000rpm, and the obtained film is annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD) with a thickness of 30nm;

[0075] 5) Vacuum deposition of 30 nm thick inert metal gold as top electrode on the organic functional layer, where the mask is a crossbar type electrode with a line width of 50 pm and a line spacing of 750 pm, to obtain the multifunctional organic memristor.

[0076] The multifunctional organic memristor of the present example was subjected to the same electrical performance test as in Example 1, and the test results were similar to those of Example 1. On the one hand, fine adjustment of the content of organic semiconductor material P35P in the blended film can realize both volatile and non-volatile electrical behaviors in the same system: the organic memristor based on the blended film of ECBD-5 and ECBD-10 exhibits erasable non-volatile electrical behavior, and when the content of organic semiconductor material P35P is further increased to 50 wt% of the total amount of organic semiconductor material and elastomer, the organic memristor based on the blended film of ECBD-50 exhibits volatile electrical behavior; on the other hand, the electrical performance of the blended film of ECBD-10 remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended film remains unchanged after 1000 cycles of stretching at 100% strain.

[0077] Example 3

[0078] The organic semiconductor material of the present example was selected as triphenyl phosphate (TPP, CAS: 115-86-6, Lot No.: Aldrich 241288), and the elastomer was selected as chloroprene rubber (CR, CAS: 9010-98-4, Lot No.: Sigma-Aldrich 205397).

[0079] The preparation steps of the multifunctional organic memristor based on the crossbar distribution strategy are as follows:

[0080] 1) The substrate was sequentially cleaned with water, acetone, and isopropanol under ultrasonic waves, each solvent was ultrasonically cleaned for 2 times, each time for 10 minutes, and then dried with nitrogen, and dried in an oven at 120°C for 5 minutes;

[0081] 2) Vacuum deposition of 30 nm thick active metal aluminum as bottom electrode on the substrate, where the mask is a crossbar type electrode with a line width of 50 pm and a line spacing of 750 pm;

[0082] 3) The organic semiconductor material TPP and the elastomer CR were dissolved to form a solution, and then mixed at 100°C to obtain a mixed solution (the organic semiconductor material TPP accounts for 5 wt%, 10 wt%, 15 wt%, 20 wt%, and 50 wt% of the total amount of organic semiconductor material TPP and elastomer CR, and the total concentration of organic semiconductor material TPP and elastomer CR in the mixed solution is 8 mg / mL);

[0083] 4) The mixed solution was spin-coated on the substrate with the bottom electrode evaporated at a speed of 1000 rpm, and the obtained film was annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD) with a thickness of 30 nm;

[0084] 5) A 30 nm-thick inert metal gold was vacuum evaporated on the organic functional layer as a top electrode, wherein the mask plate was a crossbar electrode with a line width of 50 μm and a line spacing of 750 μm, to obtain a multifunctional organic memristor.

[0085] The multifunctional organic memristor of the present embodiment was subjected to the same electrical performance test as in Example 1, and the test results were similar to those of Example 1. On the one hand, fine adjustment of the content of the organic semiconductor material TPP in the blended film can realize both volatile and non-volatile electrical behaviors in the same system: the organic memristor based on the ECBD-5 and ECBD-10 blended film exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material TPP is continuously increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the ECBD-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical performance of the ECBD-10 blended film remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended film can remain unchanged after 1000 cycles of stretching under 100% strain.

[0086] Example 4

[0087] The organic semiconductor material of the present embodiment was selected as poly-carbazole phosphoric acid (Poly-2PACz, Lot No.: DerthonP0690), and the elastomer was selected as polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Derthon 200557).

[0088] The preparation steps of the multifunctional organic memristor based on the crossbar distribution strategy are as follows:

[0089] 1) The substrate was ultrasonically cleaned with water, acetone and isopropanol in turn, each solvent was ultrasonically cleaned for 2 times, each time for 10 minutes, and then dried with nitrogen, and dried in an oven at 120°C for 5 minutes;

[0090] 2) A 30 nm-thick active metal aluminum was vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate was a crossbar electrode with a line width of 50 μm and a line spacing of 750 μm;

[0091] 3) The organic semiconductor material Poly-2PACz and the elastomer SEBS are respectively dissolved to form a solution, and then the solution mixing is carried out at 100°C to obtain a mixed solution (the organic semiconductor material Poly-2PACz accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material Poly-2PACz and the elastomer SEBS, and the total concentration of the organic semiconductor material Poly-2PACz and the elastomer SEBS in the mixed solution is 8mg / mL);

[0092] 4) The mixed solution is spin-coated on the substrate with the bottom electrode evaporated under an inert atmosphere at a rotation speed of 1000rpm, and the obtained thin film is annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD) with a thickness of 40nm;

[0093] 5) The inert metal gold with a thickness of 30nm is vacuum evaporated on the organic functional layer as a top electrode, wherein the mask plate is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm, to obtain a multifunctional organic memristor.

[0094] The multifunctional organic memristor of the present embodiment is subjected to the same electrical performance test as in Example 1, and the test results are similar to those of Example 1. On the one hand, fine adjustment of the content of the organic semiconductor material Poly-2PACz in the blended thin film can realize the electrical behaviors of volatile and non-volatile in the same system: the organic memristor based on the ECBD-5 and ECBD-10 blended thin film presents the non-volatile electrical behavior that can be erased and written, and when the content of the organic semiconductor material Poly-2PACz is continuously increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the ECBD-50 blended thin film presents the volatile electrical behavior; on the other hand, the electrical performance of the ECBD-10 blended thin film remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended thin film can remain unchanged after 1000 cycles of stretching under 100% strain.

[0095] Example 5

[0096] The organic semiconductor material of the present embodiment is selected as poly(N-vinylcarbazole) (PVK, CAS: 25067-59-8, Lot No.: Aldrich 368350), and the elastomer is selected as chlorobutyl rubber (CR, CAS: 9010-98-4, Lot No.: Sigma-Aldrich 205397).

[0097] The preparation steps of the multifunctional organic memristor based on the crossbar distribution strategy are as follows:

[0098] 1) The substrate was sequentially cleaned with water, acetone, isopropanol by ultrasonic cleaning, each solvent was ultrasonic cleaned for 2 times, each time for 10 minutes, and then dried with nitrogen blowing, and dried in an oven at 120°C for 5 minutes;

[0099] 2) A 30 nm thick active metal aluminum was vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate was a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm;

[0100] 3) The organic semiconductor material PVK and the elastomer CR were respectively dissolved to form a solution, and then mixed at 100°C to obtain a mixed solution (the organic semiconductor material PVK accounted for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material PVK and the elastomer CR, and the total concentration of the organic semiconductor material PVK and the elastomer CR in the mixed solution was 8mg / mL) ;

[0101] 4) The mixed solution was spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere, the rotation speed was 1000 rpm, and the obtained thin film was annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD), the thickness was 40 nm;

[0102] 5) A 30 nm thick inert metal gold was vacuum evaporated on the organic functional layer as a top electrode, wherein the mask plate was a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, to obtain a multifunctional organic memristor.

[0103] The multifunctional organic memristor of the present embodiment was subjected to the same electrical performance test as in Example 1, and the test results were similar to those of Example 1. On the one hand, fine adjustment of the content of the organic semiconductor material PVK in the blended thin film can realize the electrical behaviors of volatile and non-volatile in the same system: the organic memristor based on the ECBD-5 and ECBD-10 blended thin film presents the non-volatile electrical behavior that can be erased and written, and when the content of the organic semiconductor material PVK is increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the ECBD-50 blended thin film presents the volatile electrical behavior; on the other hand, the electrical performance of the ECBD-10 blended thin film remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended thin film can remain unchanged after 1000 cycles of stretching under 100% strain.

[0104] Example 6

[0105] The organic semiconductor material of the embodiment is selected as poly-carbazole phosphoric acid (Poly-2PACz, Lot No.: DerthonP0690), and the elastomer is selected as polystyrene butadiene copolymer (SBR, CAS: 9003-55-8, Lot No.: Sigma-Aldrich 430072).

[0106] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0107] 1) The substrate is sequentially cleaned with water, acetone, and isopropanol by ultrasonic cleaning, each solvent is ultrasonically cleaned for 2 times, each time for 10 minutes, and then dried with nitrogen, and dried in an oven at 120°C for 5 minutes;

[0108] 2) A 30 nm thick active metal aluminum is vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm;

[0109] 3) The organic semiconductor material Poly-2PACz and the elastomer SBR are respectively dissolved to form a solution, and then mixed under the condition of 100°C to obtain a mixed solution (the organic semiconductor material Poly-2PACz accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material Poly-2PACz and the elastomer SBR, and the total concentration of the organic semiconductor material Poly-2PACz and the elastomer SBR in the mixed solution is 8mg / mL);

[0110] 4) The mixed solution is spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere at a speed of 1000 rpm, and the obtained film is annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD), and the thickness is 30 nm;

[0111] 5) A 30 nm thick inert metal gold is vacuum evaporated on the organic functional layer as a top electrode by covering a mask plate, wherein the mask plate is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, to obtain a multifunctional organic memristor.

[0112] The multifunctional organic memristor of the present example was subjected to the same electrical performance test as in Example 1, and the test results were similar to those of Example 1. On the one hand, fine adjustment of the content of the organic semiconductor material Poly-2PACz in the blended film can achieve both volatile and non-volatile electrical behaviors in the same system: the organic memristor based on the blended film of ECBD-5 and ECBD-10 exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material Poly-2PACz is further increased to 50wt% of the total amount of organic semiconductor material and elastomer, the organic memristor based on the blended film of ECBD-50 exhibits volatile electrical behavior; on the other hand, the electrical performance of the blended film of ECBD-10 remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0113] Example 7

[0114] The organic semiconductor material of the present example was selected as poly(N-vinylcarbazole) (PVK, CAS: 25067-59-8, Lot No.: Aldrich 368350), and the elastomer was selected as polyisobutylene (PIB, CAS: 9003-27-4, Lot No.: J&K 918785).

[0115] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0116] 1) The substrate was sequentially subjected to ultrasonic cleaning with water, acetone, and isopropanol, each solvent for 2 times of ultrasonic cleaning for 10 minutes, and then dried with nitrogen blowing, and dried in an oven at 120°C for 5 minutes;

[0117] 2) A 30nm-thick active metal aluminum was vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate was a crossbar-type electrode with a line width of 50μm and a line spacing of 750μm;

[0118] 3) The organic semiconductor material PVK and the elastomer PIB were respectively dissolved to form a solution, and then mixed under the condition of 100°C to obtain a mixed solution (the organic semiconductor material PVK accounted for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material PVK and the elastomer PIB, and the total concentration of the organic semiconductor material PVK and the elastomer PIB in the mixed solution was 8mg / mL);

[0119] 4) The mixed solution was spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere at a speed of 1000rpm, and the obtained film was annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD) with a thickness of 40nm;

[0120] 5) Again, vacuum evaporate 30 nm thick inert metal gold as top electrode on the organic functional layer, where the mask is crossbar type electrode with line width of 50 μm and line spacing of 750 μm, to obtain the multifunctional organic memristor.

[0121] The multifunctional organic memristor of the present embodiment was subjected to the same electrical performance test as in Example 1, and the test results were similar to those of Example 1. On the one hand, fine adjustment of the content of organic semiconductor material PVK in the blended film can realize both volatile and non-volatile electrical behaviors in the same system: the organic memristor based on the ECB-5 and ECB-10 blended film exhibits erasable non-volatile electrical behavior, and when the content of organic semiconductor material PVK is further increased to 50 wt% of the total amount of organic semiconductor material and elastomer, the organic memristor based on the ECB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical performance of the ECB-10 blended film remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended film can remain unchanged after 1000 cycles of stretching under 100% strain.

[0122] Example 8

[0123] The organic semiconductor material of the present embodiment was selected as triphenyl phosphate (TPP, CAS: 115-86-6, Lot No.: Aldrich 241288), and the elastomer was selected as polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aldrich 200557).

[0124] The preparation steps of the multifunctional organic memristor based on the crossbar distribution strategy are as follows:

[0125] 1) The substrate was sequentially cleaned with water, acetone, and isopropanol under ultrasonic for 2 times for each solvent, each time for 10 minutes, and then dried with nitrogen blowing, and dried in an oven at 120°C for 5 minutes;

[0126] 2) Vacuum evaporate 30 nm thick active metal aluminum as bottom electrode on the substrate, where the mask is crossbar type electrode with line width of 50 μm and line spacing of 750 μm;

[0127] 3) The organic semiconductor material TPP and the elastomer SEBS are respectively dissolved to form a solution, and then the solution mixing is carried out at 100°C to obtain a mixed solution (the organic semiconductor material TPP accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material TPP and the elastomer SEBS, and the total concentration of the organic semiconductor material TPP and the elastomer SEBS in the mixed solution is 8mg / mL);

[0128] 4) The mixed solution is spin-coated on the substrate with the bottom electrode evaporated under an inert atmosphere at a rotation speed of 1000rpm, and the obtained thin film is annealed at 100°C for 20 minutes to obtain an organic functional layer (referred to as ECBD) with a thickness of 40nm;

[0129] 5) The inert metal gold with a thickness of 30nm is vacuum evaporated on the organic functional layer as a top electrode, wherein the mask plate is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm, to obtain a multifunctional organic memristor.

[0130] The multifunctional organic memristor of the present embodiment is subjected to the same electrical performance test as in Example 1, and the test results are similar to those of Example 1. On the one hand, fine adjustment of the content of the organic semiconductor material TPP in the blended thin film can realize both volatile and non-volatile electrical behaviors in the same system: the organic memristor based on the ECBD-5 and ECBD-10 blended thin film exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material TPP is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the ECBD-50 blended thin film exhibits volatile electrical behavior. On the other hand, the electrical performance of the ECBD-10 blended thin film remains unchanged under different strain loading and unloading in the range of 100% strain, and the electrical performance of the blended thin film can remain unchanged after 1000 cycles of stretching under 100% strain.

[0131] Comparative Example 1

[0132] The organic semiconductor material of the present comparative example is selected as poly[2,6-dihexyl-4,8-bis(2-thienyl)benzo[1,2-b:4,5-b']dithiophene]-2,6-dihexyl-4,8-bis(2-thienyl)benzo[1,2-b:4,5-b']dithiophene (DPPT-TT, CAS: 1260685-66-2, Lot No.: Shenzhen Rui Xun P1128), and the elastomer is selected as polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aldrich 200557).

[0133] The preparation steps of the organic memristor are as follows:

[0134] 1) The substrate was sequentially cleaned with water, acetone, isopropanol by ultrasonic cleaning, each solvent was ultrasonic cleaned for 2 times, each time for 10 minutes, and then dried with nitrogen blowing, and dried in an oven at 120°C for 5 minutes;

[0135] 2) A 30 nm thick active metal aluminum was vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate was a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm;

[0136] 3) The organic semiconductor material DPPT-TT and the elastomer SEBS were respectively dissolved to form a solution, and then mixed under the condition of 100°C to obtain a mixed solution (the organic semiconductor material DPPT-TT accounted for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material DPPT-TT and the elastomer SEBS, and the total concentration of the organic semiconductor material DPPT-TT and the elastomer SEBS in the mixed solution was 8mg / mL);

[0137] 4) The mixed solution was spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere, the rotation speed was 1000 rpm, and the obtained thin film was annealed at 100°C for 20 minutes to obtain an organic functional layer with a thickness of 30 nm;

[0138] Since the DPPT-TT and the SEBS have poor compatibility, when the organic semiconductor material DPPT-TT accounts for 5-50wt% of the total amount of the organic semiconductor material and the elastomer, the blended thin film forms a vertical stratified structure with DPPT-TT enriched in the surface layer and the bottom layer;

[0139] 5) A 30 nm thick inert metal gold was vacuum evaporated on the organic functional layer as a top electrode by covering a mask plate, wherein the mask plate was a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, to obtain a complete device.

[0140] After fine adjustment of the content of the organic semiconductor material DPPT-TT in the blended thin film, it was observed that the devices based on the 5%-50% blended thin film all showed single resistance, as shown in Figure 10 , and no memory resistance behavior was observed.

[0141] This example proves that when the organic semiconductor and the elastomer have poor compatibility, the organic layer shows a longitudinal stratified phase separation structure, thereby resulting in that the organic layer does not have the memory resistance function.

[0142] Comparative Example 2

[0143] The organic semiconductor material of the present comparative example is selected as poly(9,9-dioctylfluorene-2,7-diyl) (PF8, CAS: 19456-48-5, Lot No.: Shenzhen Rui Xun P0421), and the elastomer is selected as polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aldrich 200557).

[0144] The preparation steps of the organic memristor are as follows:

[0145] 1) The substrate is sequentially cleaned with water, acetone and isopropanol by ultrasonic cleaning, each solvent is ultrasonically cleaned twice, each time for 10 minutes, and then dried with nitrogen, and dried in an oven at 120°C for 5 minutes;

[0146] 2) A 30 nm thick active metal aluminum is vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm;

[0147] 3) The organic semiconductor material PF8 and the elastomer SEBS are respectively dissolved to form a solution, and then mixed under the condition of 100°C to obtain a mixed solution (the organic semiconductor material PF8 accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of the organic semiconductor material PF8 and the elastomer SEBS, and the total concentration of the organic semiconductor material PF8 and the elastomer SEBS in the mixed solution is 8mg / mL);

[0148] 4) The mixed solution is spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere, the rotation speed is 1000 rpm, and the obtained thin film is annealed at 100°C for 20 minutes to obtain an organic functional layer with a thickness of 30 nm;

[0149] Since PF8 has good compatibility with SEBS, when the organic semiconductor material PF8 accounts for 5-50wt% of the total amount of the organic semiconductor material and the elastomer, the blended thin film forms a PF8 longitudinal continuous distribution structure;

[0150] 5) A 30 nm thick inert metal gold is vacuum evaporated on the organic functional layer as a top electrode by covering a mask plate, wherein the mask plate is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, to obtain a complete device.

[0151] After fine adjustment of the content of the organic semiconductor material PF8 in the blended thin film, it is observed that most of the devices based on the 5%-50% blended thin film show a single resistance value, and only a small amount of devices show WORM type or Flash type electrical behavior, such as Figure 11As shown, this is due to the lack of interaction between PF8 and active aluminum ions, which cannot play the role of a switching bridge, and can only rely on the random migration of aluminum ions in the functional layer to form a conductive path, thereby realizing the transition of the resistance state, so the device yield is extremely low (less than 10%).

[0152] This example proves that when there is no interaction between the organic semiconductor and the active metal ions, even if the organic semiconductor material is in a continuous distribution structure in the elastomer matrix, the organic semiconductor material cannot play the role of a switching bridge, and the migration and switching of the active metal ions lack guidance and are full of randomness, so the device yield is extremely low.

[0153] Comparative Example 3

[0154] The conductive material of the present comparative example is selected to be gallium-indium alloy (liquid metal, CAS: wl-2018130006, Lot No.: Aladdin G393020), and the elastomer is selected to be asymmetric monohydrogen-terminated polydimethylsiloxane (PDMS, CAS: 1038821-58-7, Lot No.: Merck MER-MCR-H07).

[0155] The steps for preparing the memristor are as follows:

[0156] 1) The substrate is sequentially cleaned with water, acetone, and isopropanol by ultrasonic cleaning, each solvent is ultrasonically cleaned for 2 times, each time for 10 minutes, and then dried with nitrogen, and dried in an oven at 120°C for 5 minutes;

[0157] 2) A 30 nm thick active metal aluminum is vacuum evaporated on the substrate as a bottom electrode, wherein the mask plate is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm;

[0158] 3) The conductive material liquid metal gallium-indium alloy is dispersed in the elastomer PDMS solution (the liquid metal accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of liquid metal and elastomer PDMS);

[0159] 4) The mixed solution is spin-coated on the substrate with the evaporated bottom electrode in an inert atmosphere at a speed of 1000 rpm, and the obtained thin film is annealed at 100°C for 20 minutes to obtain a functional layer with a thickness of 30 nm;

[0160] Because the conductive material liquid metal and the elastomer PDMS have different chemical properties and molecular structures, when the conductive material liquid metal accounts for 5-50wt% of the total amount of conductive material and elastomer, the blended thin film forms a dispersed structure far from the thermodynamic equilibrium instability;

[0161] 5) Then, 30 nm thick inert metal gold was vacuum evaporated on the functional layer as the top electrode, where the mask was crossbar type electrode with line width of 50 μm and line spacing of 750 μm, to obtain the complete device.

[0162] After fine-tuning the liquid metal content of the conductive material in the blended film, it was observed that the devices based on the 5%-50% blended film had WORM-type electrical behavior, but the device performance was not stable during testing, which may be caused by the movement of liquid metal droplets. Even if the elastomer has been cross-linked, it is still unable to suppress the aggregation of liquid metal droplets, and the device is short-circuited after 5 days of storage at room temperature, as shown in Figure 12

[0163] This example demonstrates that when the dispersed structure formed by the two components of the conductive material and the elastomer is far from the thermodynamic equilibrium and unstable, the structure of the functional layer will change over time, resulting in unstable electrical performance of the memristor based on this structure.

[0164] As can be seen from Comparative Examples 1-3, it is necessary to select an elastomer with high compatibility and an organic semiconductor with strong interaction with active ions (such as aluminum ions, silver ions, and copper ions) using the conversion bridge distribution strategy in the present application.

[0165] The present application discloses and proposes a preparation method of a multifunctional organic memristor based on the conversion bridge distribution strategy, and those skilled in the art can realize it by changing the conditions, routes, etc. with reference to the content of the present application. Although the method and preparation technology of the present application have been described by preferred examples, it is obvious for those skilled in the art to modify or recombine the method and technical route described in the present application without departing from the content, spirit and scope of the present application, to realize the final preparation technology. It is particularly pointed out that all similar substitutions and modifications are obvious to those skilled in the art, and they are considered to be included in the spirit, scope and content of the present application.​

Claims

1. A multifunctional organic memristor based on a conversion bridge distribution strategy, characterized in that: It includes an organic functional layer; it also includes a bottom electrode and a top electrode; the organic functional layer is located between the bottom electrode and the top electrode; The organic functional layer comprises an organic semiconductor material and an elastomeric material; the organic semiconductor material is selected from at least one of poly[2,5-bis(3-tetradecylthiophen-2-yl)thiophene], poly(3,5-pyridine), poly(N-vinylcarbazole), polycarbazole phosphate and triphenyl phosphate; the elastomeric material is selected from at least one of polystyrene-block-polyethylene(ethylene-ran-butylene)-block-polystyrene, polystyrene butadiene copolymer, polyisobutylene and chloroprene rubber; The organic semiconductor material accounts for 5-50 wt % of the total of the organic semiconductor material and the elastomer material.

2. The multifunctional organic memristor based on the conversion bridge distribution strategy according to claim 1, characterized in that: The thickness of the bottom electrode is 30 nm; the thickness of the organic functional layer is 30-50 nm; and the thickness of the top electrode is 30 nm.

3. The multifunctional organic memristor based on the conversion bridge distribution strategy according to claim 1, characterized in that: The bottom electrode is an active metal electrode; the top electrode is an inert metal electrode.

4. A method for preparing a multifunctional organic memristor based on a conversion bridge distribution strategy according to any one of claims 1 to 3, characterized in that: The following steps are involved: Step 1: preparing a bottom electrode on a substrate by vacuum evaporation; Step 2, dissolving the organic semiconductor material and the elastomer material in a solvent, coating the resulting solution on the surface of the bottom electrode, and then annealing to obtain an organic functional layer; Step 3: Prepare a top electrode on the organic functional layer by vacuum evaporation.

5. The method for preparing a multifunctional organic memristor based on a conversion bridge distribution strategy according to claim 4, characterized in that: In step 1, the parameters of the vacuum evaporation method are set to: vacuum evaporation rate is 1-1.2 Å s -1 ; In step 2, the total concentration of the organic semiconductor material and the elastomeric material in the solution is 8-10 mg / mL; In step 3, the parameters of the vacuum evaporation method are set as follows: the vacuum evaporation rate is 0.3-0.5 Å s -1 .

6. The method for preparing a multifunctional organic memristor based on a conversion bridge distribution strategy according to claim 4, characterized in that: The annealing temperature is 90-120° C. and the annealing time is 20 min.

7. An application of the multifunctional organic memristor based on the conversion bridge distribution strategy according to claim 1 in biocompatible wearable devices and artificial intelligence.

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