Dielectric material, waveguide structure, photoelectric device and preparation method

Abstract

The invention discloses a dielectric material, a waveguide structure, a photoelectric device and a preparation method, and belongs to the field of electrochemical cells. The dielectric material is used for a photoelectric device, and the dielectric material comprises calcium silicate. Calcium silicate has the characteristics of high dielectric capacity and low refractive index, so that the calcium silicate can be suitable for the field of optical fiber communication, for example, a dielectric material can be directly deposited on a waveguide of a photoelectric device as a cladding by adopting an evaporation process, and the cladding can transmit a driving voltage to the waveguide to cause an electro-optical effect; the bandwidth and the modulation efficiency of the photoelectric device are improved, and the driving voltage of the photoelectric device is reduced, so that the purpose of optimizing the photoelectric performance of the photoelectric device is achieved.

Description

Technical Field

[0001] The present disclosure relates to the field of communication technology, and in particular to dielectric materials, waveguide structures, optoelectronic devices and preparation methods. Background Art

[0002] Dielectric materials with high dielectric constants can be used to prepare dielectric layers with high dielectric capacity and high capacitance values, making them suitable for high-frequency and miniaturized electronic communication products.

[0003] However, some common high dielectric constant dielectric materials, such as barium titanate and lead titanate materials with titanite phase structure, are relatively limited in application in optical fiber communications.

[0004] Public Content

[0005] In view of this, the present disclosure provides dielectric materials, waveguide structures, optoelectronic devices and preparation methods, which can solve the technical problems in related technologies.

[0006] Specifically, the following technical solutions are included:

[0007] In one aspect, a dielectric material is provided. The dielectric material is used in an optoelectronic device, and the dielectric material includes calcium silicate.

[0008] Calcium silicate has space charge polarization, dipole polarization and electron cloud polarization effects. On the one hand, the dielectric constant of calcium silicate in low-frequency electric field and high-frequency electric field is relatively high, which makes the calcium silicate film have high dielectric capacity. On the other hand, the refractive index of calcium silicate is relatively low, which makes the calcium silicate film have extremely low absorption coefficient of light, thereby avoiding light loss. Calcium silicate film has the characteristics of high dielectric capacity and low refractive index, making it suitable for the field of optical fiber communication. For example, the evaporation process can be used to make the dielectric material directly deposited on the waveguide of the optoelectronic device as a cladding. The cladding can transfer the driving voltage to the waveguide to cause the electro-optical effect, which is particularly beneficial for improving the bandwidth and modulation efficiency of the optoelectronic device and reducing the driving voltage of the optoelectronic device, thereby achieving the purpose of optimizing the optoelectronic performance of the optoelectronic device.

[0009] In some possible implementations, the mass percentage of the calcium silicate in the dielectric material is 100%.

[0010] In some possible implementations, the dielectric material further includes a doping material, and the doping material is selected from at least one of barium silicate and strontium silicate;

[0011] The mass percentage of the calcium silicate in the dielectric material is 20%-90%;

[0012] The mass percentage of the doping material in the dielectric material is 10%-80%.

[0013] On the one hand, the melting points of barium silicate and strontium silicate are close to those of calcium silicate, and their chemical properties are stable, which facilitates the formation of films based on co-evaporation after calcium silicate is mixed with at least one of barium silicate and strontium silicate, thereby preparing a cladding with high dielectric properties and low refractive index.

[0014] On the other hand, although the refractive indexes of calcium silicate, barium silicate and strontium silicate are all low, they are different from each other. By adjusting the doping ratio of barium silicate and / or strontium silicate, the refractive index of the dielectric material can be adjusted accordingly, making the refractive index of the dielectric material easy to control. Among them, the higher the content of calcium silicate in the dielectric material, the lower the refractive index of the dielectric material.

[0015] In some possible implementations, the high-frequency dielectric constant of the dielectric material is 8-20, and the refractive index is 1.47-1.91.

[0016] Under the premise of satisfying the respective limited ranges of high-frequency dielectric constant and refractive index, in the dielectric material, the higher the content of calcium silicate, the lower its refractive index and the lower its high-frequency dielectric constant. Conversely, the higher the content of calcium silicate, the higher its refractive index and the higher its high-frequency dielectric constant.

[0017] On the other hand, a waveguide structure is provided, which includes a substrate, a waveguide, a cladding and a buried layer, wherein the cladding is coated on the waveguide, and the whole formed by the waveguide and the cladding, the buried layer and the substrate are stacked in sequence, and the cladding is prepared by using any one of the above-mentioned dielectric materials.

[0018] The waveguide structure provided by the embodiment of the present disclosure has all the advantages of the above-mentioned dielectric materials. Based on the high dielectric properties and low refractive index characteristics of the cladding, the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure can be optimized.

[0019] The above-mentioned dielectric material provided by the embodiment of the present disclosure is used to form the cladding of the waveguide. On the one hand, the cladding can transfer the driving voltage from the signal power supply to the waveguide, thereby causing an electro-optical effect (the electro-optical effect refers to the change in the refractive index of the waveguide under the electric field, and the refractive index causes the change of the optical signal in the waveguide, realizing the modulation of electricity to light). The stronger the dielectric capacity of the cladding, the greater the voltage it transmits. The lower the refractive index of the cladding, the more light is confined to the waveguide, thereby enhancing the photoelectric interaction, which is beneficial to improving the bandwidth and modulation efficiency of the optoelectronic device, and reducing the driving voltage of the optoelectronic device, so that the optoelectronic device is suitable for optical communication systems such as data centers and telecommunications networks. On the other hand, the low absorption loss of the cladding to light makes the absorption coefficient of the cladding to light extremely low, which is beneficial to avoiding light loss.

[0020] In some possible implementations, the thickness of the cladding is sub-micron level.

[0021] In some possible implementations, the buried layer is prepared by using any of the above-mentioned dielectric materials.

[0022] On the other hand, an optoelectronic device is provided, comprising any one of the above-mentioned waveguide structures.

[0023] The waveguide structure has the property of confining light. Based on the high dielectric properties and low refractive index of the cladding, light can be more confined in the waveguide structure. This can not only optimize the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure, but also, based on the fact that the dielectric material is silicate, make it more temperature resistant.

[0024] In some possible implementations, the optoelectronic device is an electro-optic modulator. The types of electro-optic modulators include, but are not limited to: MZ interferometer modulator, microring resonant cavity modulator, FP resonant cavity modulator (FP type modulator), photonic crystal modulator (e.g. Si-based optical modulator), etc.

[0025] On the other hand, a method for preparing a waveguide structure is provided, the method comprising: providing a substrate having a buried layer; preparing a waveguide on the buried layer; using any of the above-mentioned dielectric materials to deposit a film on the waveguide through a vapor deposition process, thereby forming a cladding on the waveguide to obtain the waveguide structure.

[0026] The dielectric material is deposited into a film on the waveguide through an evaporation process, thereby forming a cladding layer on the waveguide to obtain the waveguide structure.

[0027] The method for preparing the waveguide structure provided by the embodiment of the present disclosure is based on the dielectric material including at least one of calcium silicate, barium silicate and strontium silicate. These dielectric materials have high melting points and close melting points, so that they can be stably formed into films based on evaporation processes such as electron beam evaporation processes, and then directly evaporated on the waveguide to form a cladding. Based on the process characteristics of the evaporation process, the thickness of the cladding is controllable, which facilitates the acquisition of a cladding of any thickness, and the thickness is easily controlled at the submicron level, so that it is suitable for optoelectronic devices.

[0028] The method for preparing the waveguide structure provided in the embodiment of the present disclosure not only has the advantages of simple preparation process, good repeatability, and convenience for large-scale production, but also has strong compatibility with waveguides, can be applied to the preparation of cladding in various optoelectronic devices, and has high versatility.

[0029] In some possible implementations, the dielectric material is obtained by the following method:

[0030] Provide dielectric raw materials;

[0031] The dielectric raw material is subjected to impurity removal and crushing treatment to obtain the dielectric material.

[0032] By removing impurities and crushing the dielectric raw materials, on the one hand, impurities therein are removed, so that the dielectric material has high purity and the photoelectric performance of the cladding is improved. On the other hand, the particle size of the dielectric material is made more suitable for the electron beam evaporation process to obtain a cladding with a smooth and dense surface and reduce the defects of the cladding. In addition, calcium silicate raw materials, barium silicate raw materials and strontium silicate raw materials all have the advantages of easy availability of raw materials and low cost, which is conducive to reducing the preparation cost of optoelectronic devices, especially the cladding.

[0033] In some possible implementations, the evaporation process is an electron beam evaporation process, and the electron beam evaporation process satisfies at least one of the following evaporation conditions:

[0034] The preheating current of the electron beam gun on the dielectric material is 60mA-90mA;

[0035] The pre-melting current of the electron beam gun on the dielectric material is 0.10A-0.15A;

[0036] The evaporation current of the electron beam gun on the dielectric material satisfies the evaporation rate of 0.5A / s-0.8A / s.

[0037] Through the above arrangement, the bonding effect between the prepared cladding and the waveguide can be improved, and the texture of the cladding can be made more uniform, flat and dense. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A cross-sectional view of an exemplary waveguide structure provided for an embodiment of the present disclosure;

[0039] Figure 2 A cross-sectional view of another exemplary waveguide structure provided for an embodiment of the present disclosure;

[0040] Figure 3 A partial cross-sectional view of an exemplary MZ interferometric modulator provided for an embodiment of the present disclosure;

[0041] Figure 4 The XRD pattern of the cladding in the waveguide structure provided in Example 1;

[0042] Figure 5 A spectrum of light transmittance of the cladding in the waveguide structure provided in Example 1;

[0043] Figure 6 The ellipsometer spectrum of the cladding in the waveguide structure provided in Example 1;

[0044] Figure 7 This is a SEM image of the cladding in the waveguide structure provided in Example 1.

[0045] The reference numerals represent:

[0046] 100, substrate;

[0047] 200, waveguide;

[0048] 300, cladding;

[0049] 400, buried layer;

[0050] 500, metal electrode;

[0051] 600. Coating layer. DETAILED DESCRIPTION

[0052] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0053] In the description of the embodiments of the present disclosure, the terms "upper", "lower" and the like indicate positions or location relationships based on the attached Figure 1 The orientation or positional relationship shown is only for the convenience of describing the present disclosure and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0054] In the description of the embodiments of the present disclosure, the term "high frequency dielectric constant" refers to the dielectric constant measured under high frequency conditions, also known as the dynamic dielectric constant. The high frequency conditions set in the embodiments of the present disclosure are 50 GHz or greater than 50 GHz.

[0055] For some common dielectric materials with high dielectric constants, such as barium titanate and lead titanate materials with titanite phase structure, their applications in the field of optical fiber communications are relatively limited.

[0056] In view of the technical problems existing in the related art, on the one hand, an embodiment of the present disclosure provides a dielectric material, which can be used in optoelectronic devices, and the dielectric material includes calcium silicate (CaSiO3).

[0057] Calcium silicate has space charge polarization, dipole polarization and electron cloud polarization effects. On the one hand, the dielectric constant of calcium silicate in both low-frequency electric field and high-frequency electric field is relatively high, which makes the calcium silicate film have high dielectric capacity. On the other hand, the refractive index of calcium silicate is relatively low, which makes the calcium silicate film have extremely low absorption coefficient of light, thereby avoiding light loss. The characteristics of calcium silicate film with both high dielectric capacity and low refractive index make it suitable for the field of optical fiber communication. For example, the dielectric material can be directly deposited on the waveguide of the optoelectronic device as a cladding by evaporation process. The cladding can transfer the driving voltage to the waveguide to cause the electro-optical effect, which is particularly beneficial for improving the bandwidth and modulation efficiency of the optoelectronic device and reducing the driving voltage of the optoelectronic device, thereby achieving the purpose of optimizing the optoelectronic performance of the optoelectronic device.

[0058] In some examples, the dielectric constant and refractive index of calcium silicate films based on calcium silicate are tested. The low-frequency dielectric constant of the calcium silicate film in a low-frequency electric field (1kHz) is greater than 160, and the high-frequency dielectric constant in a high-frequency electric field (50GHz) is 6.3, showing excellent dielectric capacity. The refractive index of the calcium silicate film is between 1.47-1.55. Although the refractive index is mainly determined by the material, the thickness and purity of the calcium silicate film will also affect the determination of the refractive index to a certain extent, causing the refractive index value to fluctuate within a certain range.

[0059] In some implementations, the dielectric material provided by the embodiments of the present disclosure includes 100% calcium silicate, that is, the mass percentage of calcium silicate in the dielectric material is 100%. Based on this approach, a cladding layer is a calcium silicate film layer.

[0060] In other implementations, the dielectric material provided by the embodiments of the present disclosure also includes a doping material, the doping material is selected from at least one of barium silicate (BaSiO3) and strontium silicate (SrSiO3), and the mass percentage of calcium silicate in the dielectric material is 20%-90%, and the mass percentage of the doping material in the dielectric material is 10%-80%.

[0061] Both barium silicate and strontium silicate have the characteristics of high dielectric constant and low refractive index. Among them, the dielectric constant of strontium silicate in a low-frequency electric field is greater than 240 and the refractive index is between 1.71-1.76, for example, a set of refractive index test data of strontium silicate is 1.73, and the dielectric constant of barium silicate in a low-frequency electric field is greater than 310 and the refractive index is between 1.67-1.93, for example, a set of refractive index test data of barium silicate is 1.91, which can also help to obtain dielectric materials with both high dielectric constant and low refractive index.

[0062] At least one of barium silicate and strontium silicate is selected as a doping material to act synergistically with calcium silicate, which has at least the following advantages:

[0063] On the one hand, barium silicate and strontium silicate have similar melting points to calcium silicate and their chemical properties are relatively stable. They are all suitable for film formation using an evaporation process. In this way, after the dielectric material mixes calcium silicate with at least one of barium silicate and strontium silicate, they can be formed into films together based on co-evaporation, thereby preparing a high-quality cladding with uniform texture, giving it the characteristics of high dielectric properties and low refractive index.

[0064] On the other hand, although the refractive indexes of calcium silicate, barium silicate and strontium silicate are all low, they are different from each other. By adjusting the doping ratio of barium silicate and / or strontium silicate, the refractive index of the dielectric material can be adjusted accordingly, so that the refractive index of the dielectric material can be easily regulated, thereby improving its applicability to various types of optoelectronic devices. Among them, the higher the content of calcium silicate in the dielectric material, the lower the refractive index of the dielectric material.

[0065] In the embodiments of the present disclosure, the doping material can be barium silicate, strontium silicate, or a mixture of barium silicate and strontium silicate. For the mixture of barium silicate and strontium silicate, the mass ratio of barium silicate to strontium silicate can be any value, and the ratio between the two can be adjusted according to the actual requirements of the dielectric properties and refractive index of the dielectric material.

[0066] In some examples, the purity of calcium silicate, barium silicate and strontium silicate is at least greater than 99%, and further, their purity is greater than 99.9%. The higher the purity, the more beneficial it is to improve the photoelectric properties of the dielectric material, and the more precise the regulation of the refractive index of the dielectric material.

[0067] The mass percentage of the doping material in the dielectric material is 10%-80%, which includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc.

[0068] In some examples, the doping material is barium silicate. Accordingly, the dielectric material provided by the embodiments of the present disclosure includes calcium silicate and barium silicate, wherein the mass percentage of calcium silicate is 20%-90%, and the mass percentage of barium silicate is 10%-80%.

[0069] For example, the sum of the mass percentages of calcium silicate and barium silicate can constitute 100%. Then, the mass percentage of barium silicate includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc., and the mass percentage of calcium silicate is the remainder.

[0070] For further example, the present disclosure provides a dielectric material including the following components in mass percentage: 70% calcium silicate and 30% barium silicate. According to the test, the high frequency dielectric constant (at 50 GHz) of the dielectric material is 6.9, and the corresponding refractive index is 1.61.

[0071] In some other examples, the doping material is strontium silicate. Accordingly, the dielectric material provided by the embodiments of the present disclosure includes calcium silicate and strontium silicate, wherein the mass percentage of calcium silicate is 20%-90%, and the mass percentage of strontium silicate is 10%-80%.

[0072] For example, the sum of the mass percentages of calcium silicate and strontium silicate can constitute 100%. Then, the mass percentage of strontium silicate includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80% and the like, and the mass percentage of calcium silicate is the remainder.

[0073] In some further examples, the doping material is a mixture of barium silicate and strontium silicate. Accordingly, the dielectric material provided by the embodiments of the present disclosure includes calcium silicate, barium silicate and strontium silicate, wherein the mass percentage of calcium silicate is 20%-90%, and the total mass percentage of barium silicate and strontium silicate is 10%-80%.

[0074] For example, the sum of the mass percentages of calcium silicate, barium silicate and strontium silicate can constitute 100%. Then, the mass percentage of the mixture of barium silicate and strontium silicate includes but is not limited to: 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80% and the like, and the mass percentage of calcium silicate is the remainder.

[0075] For a mixture of barium silicate and strontium silicate, the mass ratio of barium silicate to strontium silicate can be any mass ratio. For example, the mass ratio of barium silicate to strontium silicate is 1:0.1-10, which includes but is not limited to 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, 1:1, 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, etc.

[0076] The dielectric material provided in the embodiments of the present disclosure has a high-frequency dielectric constant of at least 8, for example, may be between 8 and 20, including but not limited to: 8-9, 8-10, 8-11, 8-12, 8-13, 8-14, 8-15, etc.

[0077] The dielectric material provided by the embodiments of the present disclosure has a refractive index of 1.47-1.91. In some examples, when the dielectric material is 100% calcium silicate, its refractive index is 1.47. When the dielectric material also includes barium silicate and / or strontium silicate, its refractive index is greater than 1.47, and the refractive index of the dielectric material can be adjusted accordingly according to the doping amount of barium silicate and / or strontium silicate.

[0078] Under the premise of satisfying the respective limited ranges of high-frequency dielectric constant and refractive index, in the dielectric material, the higher the content of calcium silicate, the lower its refractive index and the lower its high-frequency dielectric constant. Conversely, the higher the content of calcium silicate, the higher its refractive index and the higher its high-frequency dielectric constant.

[0079] On the other hand, the present disclosure also provides a waveguide structure, as shown in the attached Figure 1 and attached Figure 2 As shown, the waveguide structure includes a substrate 100, a waveguide 200, a cladding 300 and a buried layer 400, wherein the cladding 300 is coated on the waveguide 200, and the waveguide 200 and the cladding 300 constitute a whole, the buried layer 400, and the substrate 100 are stacked in sequence, wherein the cladding 300 is prepared by using any of the above-mentioned dielectric materials.

[0080] The waveguide structure provided by the embodiment of the present disclosure has all the advantages of the above-mentioned dielectric materials. Based on the high dielectric properties and low refractive index characteristics of the cladding 300, the optoelectronic performance of the waveguide structure provided by the embodiment of the present disclosure can be optimized.

[0081] The above-mentioned dielectric material provided in the embodiment of the present disclosure is used to form the cladding 300 of the waveguide 200. On the one hand, the cladding 300 can transmit the driving voltage from the signal power supply to the waveguide 200, thereby causing an electro-optical effect (the electro-optical effect refers to the change in the refractive index of the waveguide 200 under the electric field, and the refractive index causes the change of the optical signal in the waveguide 200, thereby realizing the modulation of electricity to light). The stronger the dielectric capacity of the cladding 300, the greater the voltage it transmits. The lower the refractive index of the cladding 300, the more light is confined to the waveguide 200, thereby enhancing the photoelectric interaction, which is conducive to improving the bandwidth and modulation efficiency of the optoelectronic device, and reducing the driving voltage of the optoelectronic device, so that the optoelectronic device is suitable for optical communication systems such as data centers and telecommunication networks. On the other hand, the cladding 300 of this material has an extremely low absorption coefficient of light, which is conducive to avoiding light loss.

[0082] The waveguide 200 can be made of electro-optical crystals, such as lithium niobate (LiNbO3), gallium arsenide (GaAs), lithium tantalate (LiTaO3), etc. Common waveguide types include ridge waveguides, strip waveguides, etc. For example, Figure 1 The waveguide 200 is exemplified as a ridge waveguide. Figure 2 The waveguide 200 is illustrated as a strip waveguide.

[0083] The buried layer 400 is located between the substrate 100 and the waveguide 200 . The buried layer 400 may be made of silicon dioxide. The buried layer 400 may also be prepared by using any of the above dielectric materials provided in the embodiments of the present disclosure.

[0084] In some examples, the buried layer 400 is prepared using any of the above dielectric materials provided in the embodiments of the present disclosure. The buried layer prepared based on the dielectric material provided in the embodiments of the present disclosure has the effect of improving the bandwidth of the optoelectronic device.

[0085] In some examples, the substrate 100 is a silicon substrate, the waveguide 200 is a lithium niobate waveguide, and the cladding 300 and the buried layer 400 are both made of the dielectric material provided by the embodiments of the present disclosure.

[0086] In some examples, the thickness of the cladding 300 in the waveguide structure is submicron level, for example, the thickness of the cladding 300 is 100nm-1μm, and may further be 200nm-1μm, 300nm-1μm, 400nm-1μm, 500nm-1μm, 600nm-1μm, 700nm-1μm, 800nm-1μm, etc.

[0087] In some examples, the buried layer 400 in the waveguide structure may have a thickness of sub-micrometer level, for example, the buried layer 400 may have a thickness of 100 nm-1 μm.

[0088] According to the dielectric material provided in the embodiment of the present disclosure, it is suitable for using an evaporation process, such as an electron beam evaporation process, to directly prepare a film on the waveguide 200, thereby forming a cladding 300 on the waveguide 200, which is conducive to accurately controlling the thickness of the cladding 300 to be at the submicron level, so that the waveguide structure is suitable for optoelectronic devices, especially miniaturized and high-density optoelectronic devices.

[0089] In some examples, the waveguide structure provided by the embodiments of the present disclosure may further include metal electrodes, and the metal electrodes are arranged on both sides of the waveguide.

[0090] In some examples, the waveguide structure provided by the embodiments of the present disclosure may further include a cladding layer, wherein the cladding layer is coated on the cladding and the metal electrode.

[0091] On the other hand, an embodiment of the present disclosure further provides an optoelectronic device, which includes any one of the above-mentioned waveguide structures.

[0092] The "optoelectronic device" involved in the embodiments of the present disclosure includes at least an optoelectronic communication device. The optoelectronic device has all the advantages of the above-mentioned dielectric materials, based on the high dielectric properties and low refractive index of the cladding, which can optimize the optoelectronic performance of the optoelectronic device provided by the embodiments of the present disclosure.

[0093] The waveguide structure has the property of confining light. Based on the high dielectric properties and low refractive index of the cladding, light can be more confined in the waveguide structure. This can not only optimize the optoelectronic performance of the waveguide structure provided in the embodiment of the present disclosure, but also, based on the fact that the dielectric material is silicate, it has good temperature resistance.

[0094] In some examples, the optoelectronic device provided by the embodiments of the present disclosure is an electro-optic modulator (EOM). An electro-optic modulator is a device that can be used to control the power (intensity modulator), phase (phase modulator) or polarization of light using an electrical control signal.

[0095] In the embodiments of the present disclosure, the types of electro-optic modulators include but are not limited to: MZ interferometer modulator, microring resonant cavity modulator, FP resonant cavity modulator (FP type modulator), photonic crystal modulator (such as Si-based optical modulator), etc.

[0096] MZ interferometric modulator means that the input light wave is divided into two equal beams at a Y branch after passing through a section of optical path, and transmitted through two waveguides respectively. The waveguide is made of electro-optical crystals, such as lithium niobate (LiNbO3), gallium arsenide (GaAs), lithium tantalate (LiTaO3), etc., and its refractive index changes with the magnitude of the applied voltage, so that the two light signals have a phase difference when they arrive at the second Y branch. Through the MZ structure, the refractive index of one or both arms in the waveguide is changed to produce a refractive index difference, phase modulation and interference are generated, thereby realizing the modulation of the optical signal.

[0097] In the MZ interferometer modulator, a cladding prepared based on the dielectric material provided in the embodiment of the present disclosure is coated on the outside of the waveguide, so that the waveguide obtains a higher proportion of driving voltage and changes the refractive index of the waveguide, thereby reducing the MZ interferometer modulator's demand for driving voltage and achieving low driving voltage and high modulation efficiency.

[0098] For example, Figure 3 A partial cross-sectional view of an MZ interferometer modulator is shown as follows: Figure 3 As shown, the MZ interferometric modulator includes a substrate 100, a buried layer 400 stacked on the substrate 100, a waveguide 200 stacked on the buried layer 400, a cladding 300 coated on the waveguide 200, two metal electrodes 500 symmetrically distributed on both sides of the waveguide 200, and a cladding 600 coated on the cladding 300 and the metal electrodes 500. The cladding 600 may be made of silicon dioxide.

[0099] The microring resonant cavity modulator consists of a lossless coupling between a waveguide and a ring resonator. It uses the waveguide loop to form feedback and has different periodic responses to light of different wavelengths, thereby achieving modulation of the optical signal.

[0100] In a micro-ring resonant cavity modulator, a cladding prepared based on the dielectric material provided in the embodiment of the present disclosure is coated on the outside of a waveguide, so that the waveguide obtains a higher proportion of driving voltage and changes the refractive index of the waveguide, thereby reducing the micro-ring resonant cavity modulator's demand for driving voltage and achieving low driving voltage and high modulation efficiency.

[0101] The FP resonant cavity modulator includes two parallel plane mirrors, and the FP cavity is formed by reflection of the two end faces. The phase delay of the light wave in the FP cavity changes with the change of the refractive index caused by the voltage applied to the waveguide electrode, and the output light intensity also changes accordingly, thereby realizing the modulation of the optical signal. The photonic crystal modulator (such as a Si-based optical modulator) includes a photonic crystal, which realizes the modulation of the optical signal through the electro-optical effect of the photonic crystal. In the FP resonant cavity modulator and the photonic crystal modulator, the cladding prepared based on the dielectric material provided in the embodiment of the present disclosure is coated on the waveguide.

[0102] On the other hand, the embodiments of the present disclosure further provide a method for preparing a waveguide structure, wherein the method for preparing a waveguide structure comprises: providing a substrate having a buried layer, preparing a waveguide on the buried layer, and using any of the above dielectric materials to deposit a film on the waveguide through an evaporation process, thereby forming a cladding on the waveguide to obtain a waveguide structure.

[0103] The method for preparing the waveguide structure provided by the embodiment of the present disclosure is based on the dielectric material including at least one of calcium silicate, barium silicate and strontium silicate. These dielectric materials have high melting points and close melting points, so that they can be stably formed into films based on evaporation processes such as electron beam evaporation processes, and then directly evaporated on the waveguide to form a cladding. Based on the process characteristics of the evaporation process, the thickness of the cladding is controllable, which facilitates the acquisition of a cladding of any thickness, and the thickness is easily controlled at the submicron level, so that it is suitable for optoelectronic devices.

[0104] The method for preparing the waveguide structure provided in the embodiment of the present disclosure not only has the advantages of simple preparation process, good repeatability, and convenience for large-scale production, but also has strong compatibility with waveguides, can be applied to the preparation of cladding in various optoelectronic devices, and has high versatility.

[0105] In some examples, the evaporation process is an electron beam evaporation process.

[0106] In the embodiment of the present disclosure, the dielectric material includes calcium silicate and may further include at least one of barium silicate and strontium silicate. When the dielectric material includes calcium silicate and at least one of barium silicate and strontium silicate at the same time, the raw materials are mixed evenly according to the set ratio and then used.

[0107] In some implementations, the dielectric material is prepared by the following method, including: providing a dielectric raw material; and performing impurity removal and crushing treatment on the dielectric raw material to obtain the dielectric material.

[0108] The calcium silicate raw materials, barium silicate raw materials and strontium silicate raw materials can all adopt the currently sold calcium silicate products, barium silicate products and strontium silicate products. These dielectric raw materials generally contain impurities, which is not conducive to obtaining a low refractive index, and the particle size does not meet the requirements of the electron beam evaporation process.

[0109] By removing impurities and crushing the dielectric raw materials, on the one hand, impurities are removed, making the dielectric material of high purity and improving the photoelectric performance of the cladding. On the other hand, the particle size of the dielectric material is made more suitable for the electron beam evaporation process to obtain a cladding with a smooth and dense surface and reduce the defects of the cladding.

[0110] In addition, calcium silicate raw materials, barium silicate raw materials and strontium silicate raw materials all have the advantages of being easily available and low in cost, which is conducive to reducing the preparation cost of optoelectronic devices, especially the cladding.

[0111] The dielectric raw material may be a 100% by mass calcium silicate raw material, or may be a combination of a calcium silicate raw material and at least one of a barium silicate raw material and a strontium silicate raw material.

[0112] The impurity removal treatment of dielectric raw materials can be achieved through roasting. By roasting various dielectric raw materials in sequence, the impurities therein are vaporized and removed, thereby achieving the purpose of purifying the raw materials.

[0113] Exemplarily, the dielectric raw material is fired at a temperature of 1200° C. to 1500° C. for 12 hours to 24 hours to achieve firing. For example, the firing temperature includes but is not limited to 1200° C., 1250° C., 1300° C., 1350° C., 1400° C., 1450° C., 1500° C., etc. The firing time includes but is not limited to 12 hours, 13 hours, 14 hours, 15 hours, 16 hours, 17 hours, 18 hours, 19 hours, 20 hours, 21 hours, 22 hours, 23 hours, 24 hours, etc.

[0114] In order to facilitate the calcination operation, the dielectric raw material can be pressed into blocks to obtain a block body. In this way, the block body is calcined at a temperature of 1200° C. to 1500° C. for 12 hours to 24 hours to achieve impurity removal.

[0115] The calcined dielectric raw material is crushed to obtain a granular raw material with a particle size within a set range, for example, the particle size of the crushed dielectric material is in the millimeter level.

[0116] For example, after crushing, the particle size of the dielectric material is 0.1 mm-10 mm, including but not limited to 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, etc.

[0117] Through the above-mentioned crushing treatment, on the one hand, the texture of the cladding is made uniform, the surface is flat and the evaporation efficiency is improved. On the other hand, it is beneficial to improve the bonding force between the cladding and the waveguide, so that the two are in full contact and problems such as bulging are avoided. On the other hand, it is also beneficial to accurately control the thickness of the cladding.

[0118] In some examples, the process corresponding to the crushing treatment may be shear crushing, grinding crushing, impact crushing, etc. For example, a crusher may be used to grind and crush the calcined dielectric raw material.

[0119] The disclosed embodiment adopts electron beam evaporation process to form a dielectric material into a film, wherein the electron beam evaporation process is to use an electron beam to directly heat the evaporation material (i.e., dielectric material) under vacuum conditions, so that the evaporation material is vaporized and transported to the waveguide, thereby condensing on the waveguide to form a cladding film.

[0120] The equipment corresponding to the electron beam evaporation process is called electron beam evaporation coating equipment, which includes a vacuum unit, an electron gun unit and a control unit. The vacuum unit is used to provide the vacuum environment required for thermal evaporation, the electron gun unit is used to provide the electron beam required for thermal evaporation to heat the dielectric material, and the control unit is used to control the operation process of the vacuum unit and the electron gun unit.

[0121] In some implementations, in order to improve the bonding effect between the prepared cladding and the waveguide and make the texture of the cladding more uniform, flat and dense, an electron beam evaporation process may be used, and the electron beam evaporation process may satisfy at least one of the following evaporation conditions:

[0122] When the electron beam gun preheats the dielectric material, the corresponding current is 60mA-100mA, including but not limited to 60mA, 65mA, 70mA, 75mA, 80mA, 85mA, 90mA, 95mA, 100mA, etc.

[0123] The corresponding current when the electron beam gun pre-melts the dielectric material is 0.10A-0.15A, which includes but is not limited to: 0.10A, 0.11A, 0.12A, 0.13A, 0.14A, 0.15A, etc.

[0124] When the electron beam gun evaporates the dielectric material, the corresponding current satisfies the evaporation rate of 0.5A / s-0.8A / s. For example, when the electron beam gun evaporates the dielectric material, the current is 0.14A-0.2A, which includes but is not limited to: 0.14A, 0.15A, 0.16A, 0.17A, 0.18A, 0.19A, 0.2A, etc., so that the evaporation rate can be 0.5A / s, 0.55A / s, 0.6A / s, 0.65A / s, 0.7A / s, 0.75A / s, 0.8A / s, etc.

[0125] In some examples, the dielectric material is formed into a cladding layer on the waveguide by an electron beam evaporation process based on an electron beam evaporation coating device, including the following steps:

[0126] (1) Opening the vent valve of the electron beam evaporation coating equipment, waiting for the air pressure in the chamber to return to a first set pressure, such as a standard atmospheric pressure, opening the chamber and placing a crucible, and fixing a waveguide structure intermediate on the substrate inside the chamber, wherein the waveguide structure intermediate includes a substrate, a buried layer, and a waveguide that are stacked in sequence.

[0127] (2) Close the door of the chamber, start the mechanical pump to pump the air pressure in the chamber to a second set pressure, for example, the second set pressure is less than or equal to 5 Pa, then close the bypass valve of the electron beam evaporation coating equipment, open the main valve and molecular pump of the electron beam evaporation coating equipment, and continue to evacuate the chamber using the molecular pump.

[0128] (3) Evacuate the chamber until the vacuum level in the chamber is greater than or equal to 10 -4 Pa, the dielectric material is evaporated. -4 The dielectric material is evaporated under a vacuum degree of Pa to ensure that the texture of the formed cladding is highly uniform and has higher purity.

[0129] (4) Turn on the power of the electron gun unit, turn on the high voltage enable switch, wait for the voltage of the electron beam gun to stabilize to the set voltage, for example, the set voltage is 5kV-10kV (5kV, 6kV, 7kV, 8kV, 9kV, 10kV, etc.), turn on the gun beam switch of the electron gun unit to preheat the dielectric material.

[0130] (5) Controlling the electron beam gun to preheat the dielectric material with a current of 60 mA to 100 mA, which includes: controlling the electron beam gun to preheat the dielectric material with a current of 60 mA to 70 mA for 2 minutes to 5 minutes, and then controlling the electron beam gun to preheat the dielectric material with a current of 75 mA to 90 mA.

[0131] (6) When the electron beam gun is controlled to pre-melt the dielectric material, the corresponding current is 0.10A-0.15A, which includes: slowly increasing the electron beam gun current from 0.10A to 0.13A-0.15A, when the reading on the crystal oscillator is observed, it indicates that the dielectric material begins to evaporate, and at this current, for example, 0.13A, the large spot is adjusted so that the crucible is evenly heated to achieve pre-melting of the dielectric material.

[0132] (7) After a set pre-melting time, for example 10 to 20 minutes, the dielectric material in the crucible is observed to be in a liquid state, indicating that the pre-melting is complete.

[0133] (8) Continue to increase the electron beam gun current, for example, to 0.14A-0.2A, so that the evaporation rate is 0.5A / s-0.8A / s, thereby performing the evaporation operation, and the dielectric material is then deposited on the waveguide to form a cladding. During the evaporation process, the electron beam gun current is used to stabilize the evaporation rate.

[0134] (9) After the cladding is evaporated to the target thickness, the cladding is deposited on the waveguide to obtain a waveguide structure. The electron beam gun current is adjusted to zero, the high voltage enabling switch is turned off, and the chamber is cooled, for example, for 15 to 30 minutes, and then the chamber is vented and the crucible and the waveguide structure are removed.

[0135] Through the above-mentioned electron beam evaporation process, the cladding can be evaporated on the surface of the waveguide at a controllable speed, and the cladding will not damage the waveguide during the preparation process. It is suitable for non-destructive preparation of the cladding on various types of waveguides, has strong compatibility with the waveguide, and the thickness of the prepared cladding is precisely adjustable, with low roughness, flatness, density and uniform texture. In addition, the film-forming process is simple to operate, highly efficient, and does not require additional synthesis, pressing, calcination and other processes.

[0136] In some examples, the material of the buried layer is the dielectric material provided in the embodiments of the present disclosure. Then, the dielectric material can be deposited on the substrate through an evaporation process to form a buried layer on the surface of the substrate.

[0137] Among them, the evaporation process involved here can be the same as the evaporation process involved in the preparation of the cladding layer mentioned above, and will not be repeated here, so that the buried layer can be obtained by evaporation at a controllable speed, and the buried layer will not damage the substrate during the preparation process, and is suitable for non-destructive preparation of buried layers on various types of substrates.

[0138] The preferred embodiments of the present invention will be described in more detail below. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. In the embodiment, if no specific technology or conditions are indicated, the technology or conditions described in the document in this area or the product specification are carried out. If the manufacturer is not indicated for reagents used or instruments, they are all conventional products that can be obtained commercially.

[0139] Example 1

[0140] This embodiment 1 provides a dielectric material and a waveguide structure obtained based on the dielectric material, wherein the dielectric material is calcium silicate, and the waveguide structure comprises a silicon substrate, a silicon dioxide buried layer, a lithium niobate waveguide and a cladding layer stacked in sequence, wherein the cladding layer is a 500 nm thick calcium silicate layer, wherein the silicon substrate, the silicon dioxide buried layer and the lithium niobate waveguide stacked in sequence are referred to as a waveguide structure intermediate.

[0141] The waveguide structure is prepared by the following method:

[0142] A waveguide structure intermediate and a dielectric material are provided. The dielectric material is obtained by the following method: using a commercially available calcium silicate powder as a dielectric raw material, pressing the calcium silicate powder into a block by a film pressing method to obtain a block blank, and roasting the block blank at a temperature of 1250° C. for 20 hours to remove impurities to obtain a block blank. The block blank is crushed to form particles with a particle size of 0.1 mm to 5 mm as a dielectric material (i.e., an evaporation raw material). Through an electron beam evaporation process, based on an electron beam evaporation coating device, the evaporation raw material is formed into a cladding on the waveguide of the waveguide structure intermediate.

[0143] The steps of the electron beam evaporation operation in this embodiment 1 are as follows:

[0144] (1) Open the vent valve of the electron beam evaporation coating equipment, wait for the air pressure in the chamber to return to a standard atmospheric pressure, open the chamber and put the crucible in, and fix the waveguide structure intermediate on the substrate inside the chamber.

[0145] (2) Close the door of the chamber, start the mechanical pump to pump the air pressure in the chamber to 5 Pa, then close the bypass valve of the electron beam evaporation coating equipment, and open the main valve and molecular pump of the electron beam evaporation coating equipment.

[0146] (3) Evacuate the chamber until the vacuum degree in the chamber reaches 10 -4 Pa, start evaporation.

[0147] (4) Turn on the power of the electron gun unit, turn on the high voltage enable switch, wait until the voltage of the electron beam gun stabilizes to 8 kV, and turn on the gun beam switch of the electron gun unit to preheat the dielectric material.

[0148] (5) The electron beam gun is controlled to have a current of 60 mA for 2 minutes to preheat the electron beam gun. Then, the electron beam gun is controlled to have a current of 85 mA to preheat the dielectric material.

[0149] (6) Slowly increase the electron beam gun current from 0.10 A to 0.13 A. At this time, a number is observed on the crystal oscillator, indicating that the dielectric material begins to evaporate. At a current of 0.13 A, enlarge the spot size so that the crucible is heated evenly, thereby achieving pre-melting of the dielectric material.

[0150] (7) After 15 minutes of pre-melting treatment, the dielectric material in the crucible was observed to be in a liquid state, indicating that the pre-melting was completed.

[0151] (8) The electron beam gun current is further increased to 0.16 A / s, so that the evaporation rate is 0.6 A / s, thereby performing the evaporation operation, and the dielectric material is then deposited on the waveguide to form a cladding. During the evaporation process, the electron beam gun current is used to stabilize the evaporation rate at 0.6 A / s.

[0152] (9) After the cladding is evaporated to 500 nm, the cladding is evaporated on the lithium niobate waveguide to obtain a waveguide structure. The electron beam gun current is adjusted to zero, the high voltage enabling switch is turned off, and the chamber is cooled, for example, for 20 minutes, and then the chamber is vented and the waveguide structure and the crucible are taken out.

[0153] The cladding on the waveguide structure was subjected to X-ray diffraction (XRD) test. The test results are shown in Figure 4 , as attached Figure 4 As shown, the characteristic peak position of the cladding (calcium silicate film layer) has no obvious diffraction peak intensity, which shows that the cladding is amorphous, so that it can be successfully prepared based on the electron beam evaporation process.

[0154] The light transmittance of the cladding on the waveguide structure was tested. The test results are shown in Figure 5 , attached Figure 5 The transmittance curve of the cladding in the visible light and near-infrared bands is shown. It can be seen that the calcium silicate cladding has a high light transmittance in the working band of optical communication (1310nm-1550nm), wherein the light transmittance at a wavelength of 1310nm (shown by the left dotted line) is 98.57%, and the light transmittance at a wavelength of 1550nm (shown by the right dotted line) is 98.57%. It can be seen that the cladding prepared in Example 1 has no absorption loss for light in the communication band.

[0155] The high-frequency dielectric constant and refractive index of the cladding on the waveguide structure were tested. The high-frequency dielectric constant in the high-frequency electric field (50GHz) was 6.3, and the refractive index test results were shown in Figure 6 , Figure 6 The horizontal axis is the wavelength, and the wavelengths corresponding to the two dotted lines are 1310nm and 1550nm respectively. Figure 6 The ordinate on the left is the refractive index n, Figure 6 The vertical axis on the right is the light absorption coefficient k. Figure 6 It can be seen that

[0156] The refractive index of the cladding of Example 1 in the communication band is between 1.474 and 1.481, and the absorption of light is almost 0. It can be seen that the waveguide structure provided by Example 1 can be used in an electro-optical modulation device and is beneficial to the optoelectronic performance of the electro-optical modulation device.

[0157] The surface morphology of the cladding on the waveguide structure was tested. The test results are shown in Figure 7 , attached Figure 7 FIG. 4 shows an SEM image of the surface of the cladding layer, and the scale of the SEM image is 1 μm. Figure 7 It can be seen that the surface of the cladding is very flat, without defects such as protrusions or depressions, making the cladding conducive to subsequent micro-nano processing (for example, etching to form vacancies to place metal electrodes) or further deposition of thin films (for example, further depositing a coating layer thereon).

[0158] Example 2

[0159] This embodiment 2 provides a dielectric material and a waveguide structure obtained based on the dielectric material. The dielectric material includes 70% by mass of calcium silicate and 30% by mass of barium silicate. The structure of the waveguide structure is the same as that of the waveguide structure of embodiment 1, except that the cladding in embodiment 2 is prepared based on the dielectric material of embodiment 2.

[0160] The preparation process of the waveguide structure can refer to Example 1, the difference being that the current corresponding to the electron beam gun preheating the dielectric material is 90 mA, the current corresponding to the electron beam gun pre-melting the dielectric material is 0.15 A, and the current corresponding to the electron beam gun evaporating the dielectric material is 0.19 A, so that the evaporation rate can be 0.7 A / s.

[0161] After testing, the surface of the cladding provided in Example 2 is flat, without defects such as protrusions or depressions, and the refractive index of the cladding provided in Example 2 is 1.61, so that its absorption of light in the communication band is almost zero, and the high-frequency dielectric constant of the cladding provided in Example 2 at 50 GHz is 6.9. It can be seen that the waveguide structure provided in Example 2 can be used in electro-optical modulation devices and is conducive to improving the optoelectronic performance of electro-optical modulation devices.

[0162] Example 3

[0163] This embodiment 3 provides a dielectric material and a waveguide structure obtained based on the dielectric material. The dielectric material includes 25% by mass of calcium silicate, 40% by mass of barium silicate and 35% by mass of strontium silicate. The structure of the waveguide structure is the same as that of the waveguide structure of embodiment 1, except that the cladding in embodiment 3 is prepared based on the dielectric material of embodiment 3.

[0164] The preparation process of the waveguide structure can refer to Example 1, the difference being that the current corresponding to the electron beam gun preheating the dielectric material is 95 mA, the current corresponding to the electron beam gun pre-melting the dielectric material is 0.15 A, and the current corresponding to the electron beam gun evaporating the dielectric material is 0.2 A, so that the evaporation rate can be 0.8 A / s.

[0165] After testing, the surface of the cladding provided in Example 3 is flat, without defects such as protrusions or depressions, and the refractive index of the cladding provided in Example 3 is 1.82, so that its absorption of light in the communication band is almost zero, and the high-frequency dielectric constant of the cladding provided in Example 3 at 50 GHz is 7.4. It can be seen that the waveguide structure provided in Example 3 can be used in electro-optical modulation devices and is beneficial to the optoelectronic performance of electro-optical modulation devices.

[0166] Example 4

[0167] This embodiment 4 provides a dielectric material and a waveguide structure obtained based on the dielectric material. The dielectric material includes 90% by mass of calcium silicate, 5% by mass of barium silicate, and 5% by mass of strontium silicate. The structure of the waveguide structure is the same as that of the waveguide structure of embodiment 1, except that the cladding in embodiment 4 is prepared based on the dielectric material of embodiment 4.

[0168] The preparation process of the waveguide structure can refer to Example 1, the difference being that the current corresponding to the electron beam gun preheating the dielectric material is 80 mA, the current corresponding to the electron beam gun pre-melting the dielectric material is 0.13 A, and the current corresponding to the electron beam gun evaporating the dielectric material is 0.16 A, so that the evaporation rate can be 0.6 A / s.

[0169] After testing, the surface of the cladding provided in Example 4 is flat, without defects such as protrusions or depressions, and the refractive index of the cladding provided in Example 4 is 1.50, so that its absorption of light in the communication band is almost 0, and the high-frequency dielectric constant of the cladding provided in Example 4 at 50 GHz is 6.4. It can be seen that the waveguide structure provided in Example 4 can be used in electro-optical modulation devices and is beneficial to the optoelectronic performance of electro-optical modulation devices.

[0170] The above description is only for the purpose of facilitating those skilled in the art to understand the technical solution of the present disclosure and is not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A dielectric material, characterized in that: The dielectric material is used for a photoelectric device, and the dielectric material comprises calcium silicate.

2. The dielectric material according to claim 1, characterized in that The mass percentage of the calcium silicate in the dielectric material is 100%.

3. The dielectric material according to claim 1, characterized in that The dielectric material further comprises a doping material, wherein the doping material is selected from at least one of barium silicate and strontium silicate; The mass percentage of the calcium silicate in the dielectric material is 20%-90%; The mass percentage of the doping material in the dielectric material is 10%-80%.

4. The dielectric material according to any one of claims 1 to 3, characterized in that: The high-frequency dielectric constant of the dielectric material is 8-20, and the refractive index is 1.47-1.

91.

5. A waveguide structure, characterized in that: The waveguide structure comprises a substrate, a waveguide and a cladding buried layer, wherein the cladding is coated on the waveguide, and the whole formed by the waveguide and the cladding, the buried layer and the substrate are sequentially stacked; Wherein, the cladding is prepared by using the dielectric material described in any one of claims 1-4.

6. The waveguide structure according to claim 5, characterized in that: The thickness of the cladding layer is sub-micron level.

7. The waveguide structure according to claim 5, characterized in that: The buried layer is prepared by using the dielectric material according to any one of claims 1 to 4.

8. A photoelectric device, characterized in that: The optoelectronic device comprises the waveguide structure according to any one of claims 5-7.

9. The optoelectronic device according to claim 8, characterized in that: The optoelectronic device is an electro-optic modulator.

10. A method for preparing a waveguide structure, characterized in that: The method for preparing the waveguide structure comprises: providing a substrate having a buried layer; preparing a waveguide on the buried layer; The dielectric material according to any one of claims 1 to 4 is used to deposit a film on a waveguide through an evaporation process, thereby forming a cladding on the waveguide to obtain the waveguide structure.

11. The method for preparing a waveguide structure according to claim 10, characterized in that: The dielectric material is obtained by the following method: Provide dielectric raw materials; The dielectric raw material is subjected to impurity removal and crushing treatment to obtain the dielectric material.

12. The method for preparing a waveguide structure according to claim 10, characterized in that: The evaporation process is an electron beam evaporation process, and the electron beam evaporation process satisfies at least one of the following evaporation conditions: The preheating current of the electron beam gun on the dielectric material is 60mA-90mA; The pre-melting current of the electron beam gun on the dielectric material is 0.10A-0.15A; The evaporation current of the electron beam gun on the dielectric material satisfies the evaporation rate of 0.5A / s-0.8A / s.

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