Temperature control apparatus for semiconductor, temperature control system for semiconductor, and control method thereof

Abstract

The application provides a temperature control device for semiconductor, a temperature control system for semiconductor and a control method thereof. The temperature control device for semiconductor comprises a refrigerant circulation system and a carrier refrigerant circulation system. The refrigerant circulation system comprises a compressor, a refrigerant passage of a first heat exchanger, a first throttling component and a refrigerant passage of a second heat exchanger connected in sequence. The carrier refrigerant circulation system comprises a first circulation pump, a heating component and a carrier refrigerant passage of the second heat exchanger. The carrier refrigerant circulation system further comprises a first pipeline, a second pipeline, a third pipeline, a fourth pipeline, a second circulation pump and a liquid storage tank. The first pipeline and the second pipeline are connected in parallel and are connected to an outlet end of the carrier refrigerant passage. A first temperature control inlet connecting portion is arranged at an outlet end of the first pipeline, and a second temperature control inlet connecting portion is arranged at an outlet end of the second pipeline. The carrier refrigerant passage is communicated with the liquid storage tank through the third pipeline. Two ends of the third pipeline are connected to an inlet end of the carrier refrigerant passage and an outlet of the liquid storage tank, respectively. The first circulation pump and the second circulation pump are arranged on two pipelines of the first pipeline, the second pipeline and the third pipeline. The heating component is arranged on the second pipeline. An outlet end of the fourth pipeline is communicated with an inlet of the liquid storage tank, and a temperature control outlet connecting portion is arranged at an inlet end of the fourth pipeline. The temperature control device for semiconductor can provide temperature control for upper electrodes and lower electrodes at the same time, and can reduce the overall power consumption and the size of the device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to a temperature control device for semiconductors, a temperature control system for semiconductors, and a control method thereof. Background Technology

[0002] In semiconductor wafer fabrication, temperature control is extremely important for wafer yield, and more advanced processes require higher temperature precision. Currently, mainstream semiconductor temperature control equipment generally employs two methods to achieve temperature control, depending on the temperature control range: compressor refrigeration systems and cooling water heat exchange.

[0003] Etching is one of the most important processes in semiconductor manufacturing. Currently, advanced etching processes all use plasma dry etching. This process requires cooling the upper electrode while controlling the temperature of the lower electrode. In other words, for a single processing chamber, the temperature control equipment includes two independently set temperature control systems to control the temperature of the upper and lower electrodes respectively. The temperature control equipment is large in size and expensive.

[0004] Furthermore, to improve wafer processing efficiency, mainstream etching equipment adopts a dual-cavity design, meaning one processing unit can process wafers in two cavities simultaneously. The temperature control equipment also needs to simultaneously control the temperature of four electrode components in both cavities. Generally, two independent temperature control systems are used, resulting in higher overall power consumption, larger size, and higher cost. Moreover, existing temperature control systems primarily rely on adjusting heaters, which suffers from high power consumption and slow adjustment speed. Summary of the Invention

[0005] The first objective of this invention is to provide a temperature control device for semiconductors that can simultaneously provide temperature control for both the upper and lower electrodes, while reducing the overall power consumption and size of the device.

[0006] A second objective of the present invention is to provide a semiconductor temperature control system having the above-described semiconductor temperature control device.

[0007] A third objective of this invention is to provide a control method for the aforementioned temperature control system for semiconductors.

[0008] To achieve the aforementioned first objective, the present invention provides a temperature control device for semiconductors, comprising a refrigerant circulation system and a secondary refrigerant circulation system; the refrigerant circulation system includes a compressor, a refrigerant passage of a first heat exchanger, a first throttling component, and a refrigerant passage of a second heat exchanger connected in sequence; the secondary refrigerant circulation system includes a first circulation pump, a heating component, and a secondary refrigerant passage of a second heat exchanger; the secondary refrigerant circulation system further includes a first pipeline, a second pipeline, a third pipeline, a fourth pipeline, a second circulation pump, and a liquid receiver; the first pipeline and the second pipeline are arranged in parallel and both are connected to the secondary refrigerant passage. At the outlet end of the pipeline, the first pipeline has a first temperature-controlled inlet connection, and the second pipeline has a second temperature-controlled inlet connection. The refrigerant channel is connected to the liquid storage tank via a third pipeline, with the two ends of the third pipeline connected to the inlet end of the refrigerant channel and the outlet end of the liquid storage tank, respectively. The first circulation pump and the second circulation pump are respectively installed on two of the three pipelines: the first pipeline, the second pipeline, and the third pipeline. The heating element is installed on the second pipeline. The outlet end of the fourth pipeline is connected to the inlet end of the liquid storage tank, and the inlet end of the fourth pipeline has a temperature-controlled outlet connection.

[0009] As can be seen from the above scheme, by setting up a first and a second pipeline in parallel, a low-temperature refrigerant flows in the first pipeline to cool the upper electrode inside the etching machine, while a high-temperature refrigerant flows in the second pipeline to precisely control the temperature of the lower electrode inside the etching machine. In this way, a single device can simultaneously control the temperature of both lines, eliminating the need for additional cooling systems to cool the upper electrode, thus reducing the number of components, lowering costs, and reducing the overall size of the equipment. A storage tank is located at the outlet of the etching machine to ensure thorough mixing of the low-temperature and high-temperature refrigerants, preventing uneven mixing from affecting the temperature detection of the refrigerant in the refrigerant channel of the second heat exchanger, and consequently affecting the control of components such as the compressor or throttle valve. The heating element can instantly heat the refrigerant flowing through the pipeline containing the heating element, thereby timely controlling the temperature of the refrigerant entering the lower electrode cooling channel of the etching machine.

[0010] In addition, the present invention can achieve precise temperature control through the coordinated regulation of the refrigeration system and the heating component. During the temperature control process, adjusting the refrigeration system can also help reduce the power consumption of temperature control and increase the rate of change of the cooling capacity of the temperature control system, so as to better adapt to the rapid changes of the external load. Furthermore, the temperature control system also detects the temperature of multiple parts during regulation, which helps to maintain the stability of the processing technology and improve the accuracy of temperature control.

[0011] A preferred embodiment is that temperature sensors are installed on the first, second, and third pipelines.

[0012] Therefore, the temperature sensor on the first pipeline is used to detect the temperature of the refrigerant entering the upper electrode cooling channel of the etching machine, the temperature sensor on the second pipeline is used to detect the temperature of the refrigerant entering the lower electrode cooling channel, and the temperature sensor on the third pipeline is used to detect the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger. By detecting the above temperatures, the system can be controlled more accurately, thereby achieving precise control of the temperature of the refrigerant entering the upper and lower electrode cooling channels of the etching machine.

[0013] In a preferred embodiment, the refrigerant circulation system further includes a branch pipe and a second throttling device. The two ends of the branch pipe are respectively connected to the exhaust port of the compressor and the inlet side of the refrigerant passage of the second heat exchanger, and the second throttling device is disposed on the branch pipe.

[0014] Therefore, by setting up branch pipelines, the flow rate of high-temperature and high-pressure refrigerant vapor entering the second heat exchanger can be controlled, thereby achieving the regulation of the evaporation temperature.

[0015] A preferred embodiment is that the temperature control device for semiconductors also includes a cooling water circulation system, which includes a cooling water channel for the first heat exchanger.

[0016] Therefore, by setting up a cooling water circulation system, the temperature of the first heat exchanger can be reduced, thereby improving the heat exchange efficiency of the first heat exchanger.

[0017] A preferred embodiment is that the fourth pipeline includes a first outlet pipe and a second outlet pipe arranged in parallel, and the temperature control outlet connection includes a first outlet connection and a second outlet connection, with the first outlet connection located on the first outlet pipe and the second outlet connection located on the second outlet pipe.

[0018] In a preferred embodiment, a first circulation pump is installed on the third pipeline and is used to control the flow rate of the refrigerant in the refrigerant channel of the second heat exchanger; a second circulation pump is installed on the second pipeline and is used to control the flow rate of the refrigerant in the second temperature control inlet connection. In the direction of refrigerant flow, the heating element is located downstream of the second circulation pump.

[0019] It can be seen that the second circulation pump can control the flow rate of the refrigerant flowing into the lower electrode cooling channel. The first and second circulation pumps work together to control the flow rate of the refrigerant flowing into the upper electrode cooling channel, thereby more accurately controlling the flow rate and temperature of the refrigerant.

[0020] A preferred embodiment is that at least one of the first heat exchanger and the second heat exchanger is a plate heat exchanger.

[0021] Therefore, it can be seen that plate heat exchangers can improve the heat exchange efficiency of the two media flowing through the corresponding plate heat exchanger.

[0022] To achieve the second objective mentioned above, the present invention provides a temperature control system for semiconductors, including an etching machine and the aforementioned temperature control device for semiconductors; the etching machine is provided with a first electrode cooling channel and a second electrode cooling channel, a first temperature control inlet connection is connected to the first electrode cooling channel, and a second temperature control inlet connection is connected to the second electrode cooling channel; both the first electrode cooling channel and the second electrode cooling channel are connected to a temperature control outlet connection.

[0023] To achieve the third objective mentioned above, the present invention provides a control method for a semiconductor temperature control system, applied to the aforementioned semiconductor temperature control system. The control method includes: acquiring a first refrigerant temperature at the inlet side of the refrigerant channel of the second heat exchanger; if the first refrigerant temperature is greater than or equal to a preset upper limit refrigerant temperature value, then the compressor operates according to the upper limit of the compressor operating frequency; if the first refrigerant temperature is less than or equal to a preset lower limit refrigerant temperature value, then the compressor operates according to the lower limit of the compressor operating frequency.

[0024] Therefore, if the temperature of the first refrigerant is greater than or equal to the preset upper limit temperature of the refrigerant, it indicates that the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger is relatively high. In this case, the compressor needs to operate at the upper limit of its operating frequency to quickly reduce the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger. If the temperature of the first refrigerant is less than or equal to the preset lower limit temperature of the refrigerant, it indicates that the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger is relatively low. In this case, the compressor can operate at the lower limit of its operating frequency to increase the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger, thereby achieving energy-saving effects.

[0025] A preferred embodiment is that the control method further includes: acquiring the second refrigerant temperature at the inlet side of the first electrode cooling channel and the third refrigerant temperature at the inlet side of the second electrode cooling channel; controlling the operating frequency of the compressor based on the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature; and controlling the temperature of the heating element based on the temperature difference between the third refrigerant temperature and the second preset refrigerant temperature.

[0026] Therefore, the operating frequency of the compressor can be controlled by the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature, thus achieving timely control of the refrigerant temperature entering the upper electrode cooling channel. Simultaneously, the temperature difference between the third refrigerant temperature and the second preset refrigerant temperature can be used to control the temperature of the heating element, achieving timely control of the refrigerant temperature in the lower electrode cooling channel. Through the combined action of the compressor and heating element, the refrigerant temperature entering both the upper and lower electrode cooling channels is controlled, resulting in low power consumption and rapid adjustment. Attached Figure Description

[0027] Figure 1This is a system block diagram of an embodiment of the temperature control system for semiconductors of the present invention.

[0028] The present invention will be further described below with reference to the accompanying drawings and embodiments. Detailed Implementation

[0029] Various exemplary embodiments of the invention will now be described in detail with reference to the accompanying drawings. The descriptions of the exemplary embodiments are merely illustrative and are in no way intended to limit the invention or its application or use. The invention can be embodied in many different forms and is not limited to the embodiments described herein. These embodiments are provided to make the invention thorough and complete, and to fully express the scope of the invention to those skilled in the art. It should be noted that, unless otherwise specifically stated, the relative arrangement of components and steps, the composition of materials, numerical expressions, and values ​​set forth in these embodiments should be interpreted as merely exemplary and not as limiting.

[0030] The terms "first," "second," and similar words used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different parts. Words such as "including" or "comprising" mean that the element preceding the word encompasses the element listed after it, without excluding the possibility of encompassing other elements. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0031] In this invention, when a specific device is described as being located between a first device and a second device, an intermediary device may or may not be present between the specific device and the first or second device. When a specific device is described as being connected to other devices, the specific device may be directly connected to the other devices without an intermediary device, or it may be not directly connected to the other devices but have an intermediary device.

[0032] All terms used in this invention (including technical or scientific terms) have the same meaning as understood by one of ordinary skill in the art, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries should be interpreted as having the meaning consistent with their meaning in the context of the relevant art, and not as having an idealized or highly formalized meaning, unless expressly defined herein.

[0033] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and equipment should be considered part of the specification.

[0034] See Figure 1The semiconductor temperature control system of this embodiment includes an etching machine 1 and a semiconductor temperature control device 2. The etching machine 1 is provided with an upper electrode, a lower electrode, a first electrode cooling channel, and a second electrode cooling channel. The first electrode cooling channel is located at the upper electrode to cool the upper electrode, and the second electrode cooling channel is located at the lower electrode to precisely control the temperature of the lower electrode.

[0035] The temperature control device 2 for semiconductors includes a cooling water circulation system 3, a refrigerant circulation system 4, and a refrigerant circulation system 5.

[0036] The cooling water circulation system 3 includes a cooling water channel 61 for the first heat exchanger 6. By setting up the cooling water circulation system 3, the temperature of the first heat exchanger 6 can be reduced, thereby improving the heat exchange effect of the first heat exchanger 6.

[0037] The refrigerant circulation system 4 includes a compressor 41, a refrigerant passage 62 of a first heat exchanger 6, a first throttling device 42, and a refrigerant passage 71 of a second heat exchanger 7, all connected in sequence. The refrigerant circulation system 4 also includes a branch pipe 43, a second throttling device 44, a first pressure sensor 45, and a second pressure sensor 46. The two ends of the branch pipe 43 are respectively connected to the exhaust port 411 of the compressor 41 and the inlet side of the refrigerant passage 71 of the second heat exchanger 7. The second throttling device 44 is installed on the branch pipe 43. By installing the branch pipe 43, the flow rate of high-temperature, high-pressure refrigerant vapor entering the second heat exchanger 7 can be controlled, thereby regulating the evaporation temperature. Both the first heat exchanger 6 and the second heat exchanger 7 are plate heat exchangers; the first heat exchanger 6 is a condenser, and the second heat exchanger 7 is an evaporator. Both the first throttling device 42 and the second throttling device 44 are electronic expansion valves. The first pressure sensor 45 is located at the inlet side of the refrigerant passage 62 of the first heat exchanger 6 to detect the condensing pressure Pc. The second pressure sensor 46 is located at the outlet side of the refrigerant passage 71 of the second heat exchanger 7 to detect the evaporating pressure Pe. The control method for the opening of the electronic expansion valve, which serves as the first throttling component 42, is as follows: based on the compressor operating frequency, the corresponding target condensing pressure Pc1 in the program is called, and based on the difference Ep between Pc and Pc1, the PID program algorithm is called to calculate the opening value of the electronic expansion valve.

[0038] The refrigerant circulation system 5 includes a first circulation pump 51, a heating component 53, a refrigerant passage 72 for the second heat exchanger 7, a first pipeline 54, a second pipeline 55, a third pipeline 56, a fourth pipeline 57, a second circulation pump 52, and a liquid storage tank 58.

[0039] The first pipe 54 and the second pipe 55 are connected in parallel and are both connected to the outlet end of the refrigerant channel 72 of the second heat exchanger 7. The outlet end of the first pipe 54 is provided with a first temperature-controlled inlet connection part 541, which is used to connect to the inlet end 11 of the first electrode cooling channel of the etching machine 1. The outlet end of the second pipe 55 is provided with a second temperature-controlled inlet connection part 551, which is used to connect to the inlet end 13 of the second electrode cooling channel of the etching machine 1.

[0040] The refrigerant channel 72 is connected to the liquid storage tank 58 through a third pipe 56, with the two ends of the third pipe 56 connected to the inlet of the refrigerant channel 72 and the outlet of the liquid storage tank 58, respectively.

[0041] The outlet end of the fourth pipe 57 is connected to the inlet of the liquid storage tank 58, and the inlet end of the fourth pipe 57 is provided with a temperature-controlled outlet connection part 570. Specifically, the fourth pipe 57 includes a first outlet pipe 571 and a second outlet pipe 572 arranged in parallel. The temperature-controlled outlet connection part 570 includes a first outlet connection part 573 and a second outlet connection part 574. The first outlet connection part 573 is disposed on the first outlet pipe 571, and the second outlet connection part 574 is disposed on the second outlet pipe 572. The first outlet connection part 573 is used to connect to the outlet end 12 of the first electrode cooling channel of the etching machine 1, and the second outlet connection part 574 is used to connect to the outlet end 14 of the second electrode cooling channel of the etching machine 1.

[0042] The first circulating pump 51 is installed on the third pipeline 56, and the heating component 53 and the second circulating pump 52 are both installed on the second pipeline 55. In the direction of refrigerant flow, the heating component 53 is located downstream of the second circulating pump 52. The first circulating pump 51 can control the flow rate Q of the refrigerant flowing to the refrigerant channel 72 of the second heat exchanger 7, and the second circulating pump 52 can control the flow rate Q2 of the refrigerant flowing to the second electrode cooling channel. Simultaneously, the combined action of the first circulating pump 51 and the second circulating pump 52 can control the flow rate Q1 of the refrigerant flowing to the first electrode cooling channel; that is, the flow rate of the refrigerant flowing to the first electrode cooling channel is the difference between flow rates Q and Q2. In this embodiment, the first circulating pump 51 includes a pump body 511 and a flow meter 512. The flow meter 512 is installed at the inlet end of the pump body 511, and the flow rate in the third pipeline 56 is controlled by the flow meter 512. The second circulating pump 52 includes a pump body 521 and a flow meter 522. The flow meter 522 is located at the outlet end of the pump body 521, and the flow rate of the second pipeline 55 is controlled by the flow meter 522.

[0043] Temperature sensors are installed on the first pipe 54, the second pipe 55, and the third pipe 56. Temperature sensor 591 on the first pipe 54 is used to detect the temperature of the refrigerant entering the upper electrode cooling channel of the etching machine 1. Temperature sensor 592 on the second pipe 55 is used to detect the temperature of the refrigerant entering the lower electrode cooling channel. Temperature sensor 593 on the third pipe 56 is used to detect the temperature of the refrigerant entering the refrigerant channel 72 of the second heat exchanger 7. By detecting the above temperatures, the system can be controlled more accurately, thereby achieving precise control of the temperature of the refrigerant entering the upper electrode cooling channel and the lower electrode cooling channel of the etching machine 1.

[0044] The aforementioned semiconductor temperature control system can provide two types of coolant to the etching machine to control the processing temperature. The coolant first passes through the coolant channel 72 of the second heat exchanger 7 to lower the temperature to a lower temperature. Part of it passes through the first pipeline 54 to provide the low-temperature coolant at temperature T1 to the first electrode cooling channel of the etching machine to cool the upper electrode. The other part passes through the second circulation pump 52 and then passes through the heating element 53 to be heated to temperature T2. It then enters the first electrode cooling channel of the etching machine from the inlet 2 to control the temperature of the lower electrode.

[0045] The control method of the above-mentioned temperature control system for semiconductors includes the following steps:

[0046] Obtain the first refrigerant temperature on the inlet side of the refrigerant channel 72 of the second heat exchanger 7.

[0047] If the temperature of the first refrigerant is greater than or equal to the preset upper limit temperature value of the refrigerant, it means that the temperature of the refrigerant entering the refrigerant channel 72 of the second heat exchanger 7 is high. Then the compressor 41 operates at the upper limit value of the compressor 41 operating frequency in order to reduce the temperature of the refrigerant entering the refrigerant channel 71 of the second heat exchanger 7 as soon as possible.

[0048] If the temperature of the first refrigerant is less than or equal to the preset lower limit temperature of the refrigerant, it indicates that the temperature of the refrigerant entering the refrigerant channel 72 of the second heat exchanger 7 is low. In this case, the compressor 41 operates at the lower limit of the compressor 41 operating frequency to increase the temperature of the refrigerant entering the refrigerant channel 71 of the second heat exchanger 7, thereby achieving energy saving. At the same time, the second throttling component 44 is opened. Based on the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature, the algorithm of the PID program is called to calculate the opening value of the second throttling component 44 to control the flow rate of high-temperature and high-pressure refrigerant vapor entering the second heat exchanger 7, thereby achieving the regulation of the evaporation temperature.

[0049] Control methods for temperature control systems used in semiconductors also include:

[0050] The temperature of the second coolant at the inlet side of the first electrode cooling channel and the temperature of the third coolant at the inlet side of the second electrode cooling channel are obtained.

[0051] Based on the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature, the algorithm of the PID program is called to calculate the operating frequency of the compressor 41, and the compressor 41 is controlled to operate at this operating frequency, so as to realize timely control of the refrigerant temperature entering the upper electrode cooling channel.

[0052] Based on the temperature difference between the third refrigerant temperature and the second preset refrigerant temperature, the algorithm of the PID program is invoked to control the temperature of the heating component 53, thereby achieving timely control of the refrigerant temperature of the lower electrode cooling channel.

[0053] As can be seen from the above, by setting up a first and second pipeline in parallel, a low-temperature refrigerant flows in the first pipeline to cool the upper electrode inside the etching machine, while a high-temperature refrigerant flows in the second pipeline to precisely control the temperature of the lower electrode inside the etching machine. This solves the problem of reduced temperature control accuracy caused by rapid changes in process temperature in existing temperature control schemes. This eliminates the need for additional cooling devices to cool the upper electrode, thus reducing the number of components, lowering costs, and reducing the overall size of the equipment. A liquid storage tank is located at the outlet of the etching machine to ensure thorough mixing of the low-temperature and high-temperature refrigerants. This prevents uneven mixing from affecting the refrigerant temperature detection in the refrigerant channel of the second heat exchanger, which in turn affects the control of components such as the compressor or throttle valve. The heating element can instantly heat the refrigerant flowing through the pipeline containing the heating element, thereby controlling the temperature of the refrigerant entering the lower electrode cooling channel of the etching machine in a timely manner. This invention achieves precise temperature control through the coordinated regulation of the refrigeration system and heating components. Furthermore, by adjusting the refrigeration system during the temperature control process, it is beneficial to reduce the power consumption of temperature control and increase the rate of change of the cooling capacity of the temperature control system, thus better adapting to rapid changes in external load. In addition, the temperature control system also detects the temperature of multiple parts during regulation, which helps to maintain the stability of the processing technology and improve the accuracy of temperature control.

[0054] Furthermore, the first and second circulating pumps can be respectively installed on two of the three pipelines: the first pipeline, the second pipeline, and the third pipeline. For example, the first circulating pump can be installed on the third pipeline, and the second circulating pump on the first pipeline; or the first circulating pump can be installed on the first pipeline, and the second circulating pump on the second pipeline. Only one of the first and second heat exchangers can be a plate heat exchanger. The flow rate of the first and second circulating pumps can also be adjusted by frequency conversion speed regulation. For example, by installing a frequency converter on the motor of the circulating pump, the motor speed can be adjusted, thereby adjusting the pump flow rate. The fourth pipeline can also be a single pipeline, with a tee connector at the temperature control outlet connection. The first electrode cooling channel and the second electrode cooling channel are connected to the fourth pipeline through the tee connector. These modifications also achieve the objectives of the present invention.

[0055] Finally, it should be emphasized that the above are merely preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. Temperature control equipment for semiconductors, including refrigerant circulation systems and coolant circulation systems; The refrigerant circulation system includes a compressor, a refrigerant passage of a first heat exchanger, a first throttling component, and a refrigerant passage of a second heat exchanger connected in sequence. The refrigerant circulation system includes a first circulation pump, a heating component, and a refrigerant channel in a second heat exchanger. Its features are: The refrigerant circulation system also includes a first pipeline, a second pipeline, a third pipeline, a fourth pipeline, a second circulation pump, and a liquid storage tank; The first pipeline and the second pipeline are arranged in parallel and are both connected to the outlet end of the refrigerant channel. The outlet end of the first pipeline is provided with a first temperature control inlet connection, and the outlet end of the second pipeline is provided with a second temperature control inlet connection. The refrigerant channel is connected to the liquid storage tank through the third pipeline, and the two ends of the third pipeline are respectively connected to the inlet end of the refrigerant channel and the outlet end of the liquid storage tank; The first circulation pump and the second circulation pump are respectively installed on two of the three pipelines: the first pipeline, the second pipeline, and the third pipeline; The heating element is disposed on the second pipe; The outlet end of the fourth pipeline is connected to the inlet of the liquid storage tank, and the inlet end of the fourth pipeline is provided with a temperature-controlled outlet connection.

2. The temperature control device for semiconductors according to claim 1, characterized in that: Temperature sensors are installed on the first pipeline, the second pipeline, and the third pipeline.

3. The temperature control device for semiconductors according to claim 1, characterized in that: The refrigerant circulation system further includes a branch pipe and a second throttling component. The two ends of the branch pipe are respectively connected to the exhaust port of the compressor and the inlet side of the refrigerant passage of the second heat exchanger. The second throttling component is disposed on the branch pipe.

4. The temperature control device for semiconductors according to any one of claims 1 to 3, characterized in that: The temperature control device for semiconductors also includes a cooling water circulation system, which includes a cooling water channel for the first heat exchanger.

5. The temperature control device for semiconductors according to any one of claims 1 to 3, characterized in that: The fourth pipeline includes a first outlet pipe and a second outlet pipe arranged in parallel. The temperature control outlet connection includes a first outlet connection and a second outlet connection. The first outlet connection is disposed on the first outlet pipe, and the second outlet connection is disposed on the second outlet pipe.

6. The temperature control device for semiconductors according to any one of claims 1 to 3, characterized in that: The first circulating pump is installed on the third pipeline and is used to control the flow rate of the refrigerant in the refrigerant channel to the second heat exchanger; The second circulation pump is installed on the second pipeline and is used to control the flow rate of the refrigerant to the second temperature control inlet connection. In the direction of refrigerant flow, the heating component is located downstream of the second circulation pump.

7. The temperature control device for semiconductors according to any one of claims 1 to 3, characterized in that: At least one of the first heat exchanger and the second heat exchanger is a plate heat exchanger.

8. A temperature control system for semiconductors, characterized in that, Includes an etching machine and a temperature control device for semiconductors as described in any one of claims 1 to 7; The etching machine is provided with a first electrode cooling channel and a second electrode cooling channel. The first temperature control inlet connection is connected to the first electrode cooling channel, and the second temperature control inlet connection is connected to the second electrode cooling channel. Both the first electrode cooling channel and the second electrode cooling channel are connected to the temperature control outlet connection.

9. A control method for a temperature control system for semiconductors, characterized in that, The control method, applied to the temperature control system for semiconductors as described in claim 8, comprises: The second refrigerant temperature at the inlet side of the first electrode cooling channel and the third refrigerant temperature at the inlet side of the second electrode cooling channel are obtained. The operating frequency of the compressor is controlled based on the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature. The temperature of the heating element is controlled based on the temperature difference between the third refrigerant temperature and the second preset refrigerant temperature.

10. The control method for a temperature control device for semiconductors according to claim 9, characterized in that: The control method further includes: Obtain the first refrigerant temperature on the inlet side of the refrigerant channel of the second heat exchanger; If the temperature of the first refrigerant is greater than or equal to the preset upper limit temperature value of the refrigerant, the compressor operates according to the upper limit value of the compressor operating frequency. If the temperature of the first refrigerant is less than or equal to the preset lower limit temperature value of the refrigerant, the compressor operates according to the lower limit value of the compressor operating frequency.

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