Method for processing nano pattern by using parallel linear beams

Abstract

The invention provides a method for processing a nano pattern by using a parallel linear beam. The method comprises the following steps: parallel linear beam processing, additive processing and subtraction processing, in the field of electronic product processing, photoetching exposure modes such as EUVDUVOLED and the like are mostly used, photoetching processing is replaced by parallel linear beam processing, and the method has the advantages of being large in batch, high in efficiency and low in cost in specific processing patterns. The parallel linear beam pickling die is a core part for realizing nano processing, the pickling die adopts a linear beam pattern instead of a conventional 1: 1 or equal-proportion duplicated pattern, a linear beam is subjected to subtraction through subtraction processing (etching processing and grinding processing), a straight line is subjected to addition through addition processing (thin film deposition processing and ion implantation processing), and the parallel linear beam pickling die is obtained. The required patterns are processed on a large scale, and the process is a processing process of carving details from the whole to the local, and is completely different from a traditional equal-proportion or local-to-whole wafer processing process.

Description

Technical Field

[0001] The invention relates to the fields of nano-printing, nano-transfer printing and electronic product nano-processing, and in particular to a production method for processing patterns using a pickled template. Background Art

[0002] At present, large-scale nano-processing is based on the pickling template process, one is non-contact photolithography processing, and the other is contact nano-imprint processing. First, the contact processing is more complex and variable than the non-contact processing (materials, mechanics, temperature, fluid mechanics, etc.), and the corresponding control of processing accuracy will also be more difficult; secondly, the size of the pickling template and the pattern of non-contact photolithography processing is 3:1, and the size of the pickling template and the pattern of contact nano-imprinting is 1:1. If the pickling template of nano-imprinting is 3:1, the difficulty is at least reduced by 1 times.

[0003] The five-piece set of traditional chip production (photolithography, etching, grinding, thin film deposition, and ion implantation) is a production process from the perspective of the entire wafer, which is a characterization from the local to the whole. Photolithography is a local stamp, and additive processing (thin film deposition, ion implantation) and subtractive processing (etching, grinding) are the processes of converting the stamp into a physical object.

[0004] The present invention proposes an idea: using multiple straight line patterns (vertical and horizontal), carving the straight line patterns through additive processing (thin film deposition processing, ion implantation processing) and subtractive processing (etching processing, grinding processing), and processing the straight lines into line segments; the size of the line segments is controlled by the line width of the straight lines and the spacing between the straight lines. The line segments correspond to P junctions, N junctions, wires, insulation, etc., and then the corresponding line segments are combined into transistors through the relationship between the height differences between layers.

[0005] Therefore, the present invention can replace expensive photolithography processing in some areas: by using subtractive processing (etching, grinding) and additive processing (thin film deposition, ion implantation) to control the line width and line spacing of parallel straight line beam patterns, resistors, capacitors, electrodes, transistors, and liquid crystal light-emitting bodies can be processed in large quantities. Summary of the invention

[0006] The present invention provides a method for processing nano patterns using parallel linear beams. The method is based on contact processing of a pickled template. The pickled template processed by the parallel linear beam is the core. The straight lines of nanometer size are processed and the spacing between the straight lines is also nanometer size. The same difficulties as nanoimprint processing will be encountered: 1. The displacement accuracy of the processing equipment is difficult to control at the nanometer level. 2. The processing cost of using electron beam equipment is high. 3. The pickled template material itself is easy to deform and has a short lifespan.

[0007] In order to solve the above technical problems, the present invention adopts an annular pickling template structure and a new transfer device of gravure printing or silk screen printing plus transfer (the details of the equipment are in another patent application: the principle of the equipment is that the gravure pattern is first printed on a transfer wheel and then transferred to the workpiece through the transfer wheel.).

[0008] The following steps are involved:

[0009] First, use a simple straight line pattern: the use of a straight line pattern will reduce the requirements for processing equipment, improve processing speed and efficiency, and reduce processing costs.

[0010] Secondly, N:1 is the size of the pickling template and the pattern: by splitting an original pattern into N pickling template patterns, the distance between the pickling template straight lines is enlarged N times, which greatly improves the life of the pickling template and reduces the displacement requirements of the processing equipment.

[0011] Thirdly, low-cost integrated annular pickling template: first, use electron beam equipment to arrange the N split pickling template patterns in order and spacing to process them into an integrated nanoimprint pickling template; then use nanoimprint equipment to use PDMS glue to imprint the pickling template onto a stainless steel belt; then use welding equipment to process the processed stainless steel belt into an annular pickling template to replicate the core components at low cost.

[0012] Fourthly, the cost is lower than that of photolithography: a new transfer device is used to process a parallel straight beam photoresist pattern on the workpiece instead of the photolithography pattern; it is matched with: subtractive processing (etching, grinding), additive processing (thin film deposition, ion implantation), the principle is the same as that of photolithography. The difference is that the pattern of the photolithography template is equal to the pattern to be processed; the parallel straight beam pattern is the original straight line pattern, which needs to be matched with additive processing or subtractive processing, and the pattern to be processed is completed little by little from the entire workpiece level, which is a process of first the whole and then the part. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 The present invention provides 4 types of parallel straight line bundles;

[0014] Figure 2 A method for decomposing a parallel straight line bundle provided by the present invention into multiple parallel straight line bundles;

[0015] Figure 3 A method for decomposing a parallel straight line bundle of a pattern to be processed provided by the present invention;

[0016] Figure 4 A straight line pickling template provided by the present invention;

[0017] Figure 5 The annular pickling template provided by the present invention;

[0018] Figure 6 The general structure of the novel transfer device provided by the present invention;

[0019] Figure 7 A process diagram of processing a wafer provided by the present invention;

[0020] Figure 8 The present invention provides Figure 7 (7) the appearance of the wafer after the photoresist is stripped;

[0021] Fig. 9 The present invention provides Figure 7 Processing a wafer wherein (12) the excess conductive layer is chemically ground;

[0022] Fig.10 The present invention provides Fig. 9 The wafer appearance of the B local image;

[0023] Fig.11 The present invention provides Figure 7 Processing to a wafer after (14) thin film deposition and grinding;

[0024] Fig.12 The present invention provides Fig.11 C partial image of the wafer;

[0025] Fig.13 A diagram showing the processing of the OLED screen provided by the present invention;

[0026] Fig.14 The present invention provides Fig.13 Processing to step (3), the situation on the device transfer wheel; wherein a: equal vertical parallel straight line bundles; b: unequal vertical parallel straight line bundles; c: equal horizontal parallel straight line bundles; d: equal inclined parallel straight line bundles; e: parallel straight line bundle pattern to be processed; e-1: decomposition of e into multiple parallel straight line bundles; e-2: square pattern f: intersecting straight line bundle pattern to be processed; f-1: decomposition of f into multiple parallel straight line bundles; f-2: decomposition of f-1 into multiple parallel straight line bundles; h: material support part of the integrated multi-group parallel straight line bundle pickling template; k: N-type silicon part z: P-type silicon part; x: insulating layer; q: conductive layer; w: PNPNPN straight line string; DETAILED DESCRIPTION

[0027] The present invention describes the commonly used words in printing, such as "P-type silicon", "N-type silicon", "line width", "straight line and straight line spacing", "pickled template", "platemaking material", "platemaking equipment", "etching process", "grinding process", "ion implantation process", "thin film deposition process", "etching equipment", "nanoimprint equipment", "grinding equipment", "ion implantation equipment", "thin film deposition equipment", "insulating layer", "equipment", "conductive layer", "PN junction", "photolithography process", "photoresist", "transfer process", "pattern", "workpiece", "transfer equipment", "gravure printing and silk screen printing", "ring" and other words in the fields of transmission, printing and chip, in order to express the parameters required for nano patterns.

[0028] The present invention will be further described below in conjunction with the accompanying drawings and implementation modes.

[0029] The method for processing nano parallel linear beams is as follows:

[0030] The first step is software drawing (e-1): Use computer drawing software to split the parallel straight line beam pattern (e) 1-2-3-4-5-6-7-8-9-10-11-12-13-14-15 to be processed into multiple parallel straight line beams (e-1). The splitting rules of multiple parallel straight line beams (e-1) are: 1-4-7-10-13, 2-5-8-11-14, 3-6-9-12-15, keeping the distance between the straight lines unchanged; then keep a distance of 1 cm between the split multiple parallel straight line beams (e-1), arrange them horizontally in the order of the first straight line, and add a square pattern (e-2) for arrangement.

[0031] The second step is to process the nanoimprint pickled template: a photoresist is coated on the quartz glass, and the pattern of the first step is processed onto the quartz glass using an electron beam exposure machine to produce a nanoimprint pickled template.

[0032] The third step is to copy the pickled template: the first method (small-scale production) is to prepare a nickel stainless steel belt, grind it, coat it with a layer of PDMS, and use the nanoimprint pickled template in the second step through a UV nanoimprint device to replicate the PDMS pattern on the stainless steel belt. The second method (large-scale production) is basically the same as the first step, except that it is changed to imprint photoresist, and the pattern is directly processed on the stainless steel belt through etching.

[0033] The fourth step is to process the annular pickling template: the nickel stainless steel strips processed in the third step are welded together end to end by laser welding to form an annular pickling template.

[0034] In the fifth step, the transfer device sprays photoresist (required liquid) through the inkjet head through multiple parallel linear beams (e-1), transfers to the transfer wheel, and dries; then the hot melt ink sprayed through the inkjet head passes through the square pattern (e-2), is transferred to the transfer wheel, and becomes sticky after being slightly dried; finally, the wafer and the transfer wheel are bonded together by pressure.

[0035] In the sixth step, a cleaning process is performed using a solvent to remove the hot melt ink not covered by the photoresist.

[0036] The above six steps are a method for processing a nano parallel linear beam on a wafer.

[0037] First embodiment: Processing PN junction ( Figure 7 )

[0038] Brief description: Step 1: First, a parallel linear beam photoresist pattern is processed on the wafer, and then ion implantation is performed.

[0039] It can form a large area of ​​interconnected PNPNPN junctions; the wafer is rotated 90 degrees, and then a parallel straight line beam photoresist pattern is processed, which can be used in conjunction with the etching process to form straight line PNPNPN junctions; the wafer is rotated 90 degrees again, and then a parallel straight line beam photoresist pattern is processed, which can be used in conjunction with the etching process to form PN junctions one by one.

[0040] In the second step, a parallel straight beam photoresist pattern is first processed on the wafer, and thin film deposition (conductive film or insulating film) is combined with grinding to remove excess conductive film or insulating film on the parallel straight beam to form a straight conductive line or insulating line; the wafer is rotated 90 degrees, and then a parallel straight beam photoresist pattern is processed, and etching is combined to form a segmented conductive line or insulating line. By repeatedly processing parallel straight beam photoresist patterns, thin film deposition, grinding, etching, and ion implantation, the line segments can be connected to each other through different thicknesses (heights).

[0041] This method can process fin transistors and multi-layer transistors.

[0042] Second embodiment: Processing electrode brief description: First step, as ( Figure 3 ) Decompose the original electrode image (f) into (f-2) to manufacture a ring-shaped pickling template.

[0043] In the second step, a conductive film is deposited.

[0044] The third step is to process the first step parallel linear beam pattern photoresist on the wafer.

[0045] The fourth step is etching to remove the excess conductive layer.

[0046] The fifth step is to clean off the parallel straight line beam pattern photoresist. The third embodiment: Brief description of OLED processing: The first step is to make red, blue and green into parallel straight line bundles according to their colors, and the other processes remain unchanged.

[0047] The second step is to use a multi-cavity inkjet head with a multi-color ink path system, which includes: red light emitter, blue light emitter, green light emitter, hole transport ionic liquid, electron transport ionic liquid, and photoresist.

[0048] In the third step, the inkjet head sprays photoresist to complete only the (red, blue, green) parallel straight line beam pattern onto the transfer wheel and dries.

[0049] In the fourth step, the inkjet head ejects hole transport ionic liquid to complete only the square pattern (e-2) onto the transfer wheel and dries.

[0050] In the fifth step, the inkjet head sprays red light emitters, blue light emitters, and green light emitters in parallel straight line beam patterns onto the transfer wheel, and the square pattern (e-2) is not sprayed and dried.

[0051] In the sixth step, the inkjet head ejects electron transport ionic liquid to complete only the square pattern (e-2) onto the transfer wheel, which is slightly dried and becomes sticky.

[0052] In the seventh step, the transfer wheel transfers the entire pattern to the workpiece through pressure and the adhesion of the electron-transmitting ionic liquid.

[0053] In the eighth step, the workpiece is etched to remove excess hole transport ionic liquid and electron transport ionic liquid. (The above is the completion of a long straight line of luminous bodies, and the following is the cutting of small luminous bodies.)

[0054] In the ninth step, the workpiece is rotated 90 degrees, and the inkjet head sprays photoresist to complete only the parallel straight line beam pattern (e-1) onto the transfer wheel and dries; the inkjet head sprays hot melt ink to complete only the square pattern (e-2) onto the transfer wheel, which is slightly dried and becomes sticky.

[0055] In the tenth step, the transfer wheel and the workpiece complete the pattern transfer through the combination of pressure and adhesion.

[0056] Step 10: Use solvent to clean off the hot melt ink that is not covered by the photoresist.

[0057] The eleventh step is to cut the long straight light-emitting body into small line segment light-emitting bodies by etching.

[0058] Step 12: Clean off the photoresist.

[0059] After that or before that, the positive and negative electrodes are transferred and assembled onto the substrate.

[0060] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A method for processing nano patterns using parallel linear beams, characterized in that: The following steps are involved: Parallel linear beam processing, additive processing, subtractive processing; Parallel straight line beam processing is to use transfer equipment or nanoimprint equipment to process many parallel straight line patterns on the workpiece; Additive machining is the process of adding new material to a workpiece using ion implantation equipment or thin film deposition equipment; subtractive machining is the process of removing excess material from a workpiece using etching equipment or grinding equipment.

2. The method for processing nano patterns using parallel linear beams according to claim 1 is characterized in that: The parallel straight line beam processing includes a pattern of parallel straight line beams composed of straight lines of the same length or a pattern of parallel straight line beams composed of straight lines of different lengths.

3. The method for processing nano patterns using parallel linear beams according to claim 2 is characterized in that: The pattern of parallel straight line bundles composed of straight lines of the same length is a pattern composed of many straight lines of the same length arranged in parallel.

4. The method for processing nano patterns using parallel linear beams according to claim 2 is characterized in that: The pattern of parallel straight line bundles composed of straight lines of different lengths is a pattern composed of many straight lines of different lengths arranged in parallel.

5. The method for processing nano patterns using parallel linear beams according to claim 1 is characterized in that: The parallel straight line beam processing is to use a pickled template to process the pattern.

6. The method for processing nano patterns using parallel linear beams according to claim 5 is characterized in that: The pickled template used in the parallel straight line beam processing is a ring-shaped pickled template.

7. The method for processing nano patterns using parallel linear beams according to claim 6 is characterized in that: The annular pickling template is composed of a plurality of parallel straight line beam patterns arranged in a certain order and at a certain spacing.

8. The method for processing nano patterns using parallel linear beams according to claim 7 is characterized in that: The plurality of parallel straight line beam patterns are obtained by splitting the parallel straight line beam pattern and then recombining the split parallel straight line beam pattern into a plurality of parallel straight line beam patterns according to a certain rule.

9. The method for processing nano patterns using parallel linear beams according to claim 6 is characterized in that: The annular pickling template can be a steel strip welded end to end to form an annular shape, or it can be directly made into an annular nickel strip by electroforming.

10. The method for processing nano patterns using parallel linear beams according to claim 11 is characterized in that: The annular pickling template is made by nano-imprinting.

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