Semiconductor etching process cold and hot load simulation method and system

Abstract

The invention provides a semiconductor etching process cold and hot load simulation method and system. The simulation method is applied to a simulation system. The simulation method comprises the steps that the opening degree of a first proportional valve is adjusted based on the current backflow end temperature and the expected backflow end temperature of a cold loop, and the power of a cold load of the etching process is determined based on the adjusted opening degree of the first proportional valve and the opening time period of the first proportional valve; or, the opening degree of the second proportional valve is adjusted based on the current backflow end temperature and the expected backflow end temperature of the thermal loop, and the power of the thermal load of the etching process is determined based on the adjusted opening degree of the second proportional valve and the opening time period of the second proportional valve. By adopting the technical scheme provided by the invention, the use of a heater is reduced, so that the energy consumption is reduced, the complex configuration of a refrigeration system is avoided, and the operation difficulty of a simulation load is simplified.

Description

Technical Field

[0001] The present application relates to the technical field of cold and hot load simulation, and in particular to a method and system for simulating cold and hot loads of a semiconductor etching process. Background Art

[0002] In the semiconductor etching process, in order to meet the requirements of rapid switching of temperature environment during high aspect ratio etching and cleaning, semiconductor temperature control equipment needs to pass simulated load testing before leaving the factory to ensure that the semiconductor temperature control equipment has high responsiveness and stability to drastic temperature changes. The existing simulated load testing method uses pulse width modulation control to control the output power of the heater, thereby simulating the thermal load of the etching process.

[0003] However, the heater simulation load cannot simulate the cold load, it is difficult to simulate the drastic change of the heat load due to the limitation of heat conduction, and the energy consumption is high in the long-term operation test. Summary of the invention

[0004] In view of this, the embodiments of the present application at least provide a method and system for simulating hot and cold loads of a semiconductor etching process, which not only reduces the use of heaters and thus saves energy, but also avoids the complex configuration of the refrigeration system and simplifies the operational difficulty of simulating the load.

[0005] This application mainly includes the following aspects:

[0006] In a first aspect, an embodiment of the present application provides a simulation system for cold and hot loads of a semiconductor etching process, the simulation system comprising: a cold circuit, a hot circuit, a first proportional valve, a second proportional valve, and a controller;

[0007] Preferably, the water supply end of the cold circuit is connected to one end of the first proportional valve, the other end of the first proportional valve is connected to the return end of the hot circuit, the return end of the cold circuit is connected to one end of the second proportional valve, the other end of the second proportional valve is connected to the water supply end of the hot circuit, and the controller is electrically connected to the first proportional valve and the second proportional valve, respectively.

[0008] The cold circuit integrates a cold water tank, a first circulation pump, a first three-way pipe and a first heater which are sequentially connected through pipelines;

[0009] The water outlet of the cold water tank is connected to the water inlet of the first circulation pump, the water supply end of the first circulation pump is connected to the first end of the first three-way pipe, the second end of the first three-way pipe is connected to one end of the first heater, the other end of the first heater is connected to the return end of the cold water tank, the third end of the first three-way pipe is connected to one end of the first proportional valve, and one end of the second proportional valve is connected to the other end of the first heater;

[0010] The heat circuit integrates a hot water tank, a second circulation pump, a second tee pipe and a second heater which are sequentially connected through pipelines;

[0011] Among them, the water outlet end of the hot water tank is connected to the water inlet end of the second circulation pump, the water supply end of the second circulation pump is connected to the first end of the second three-way pipe, the second end of the second three-way pipe is connected to one end of the second heater, the other end of the second heater is connected to the reflux end of the hot water tank, the third end of the second three-way pipe is connected to the other end of the second proportional valve, and the other end of the first proportional valve is connected to the other end of the first heater.

[0012] Preferably, the simulation system further comprises a hand valve;

[0013] One end of the hand valve is connected to the water outlet end of the cold water tank, and the other end of the hand valve is connected to the water outlet end of the hot water tank.

[0014] Preferably, the simulation system further comprises at least one temperature sensor, which is respectively arranged in one or more of the cold circuit and the hot circuit.

[0015] Preferably, the simulation system further comprises at least one flow meter, which is respectively arranged in one or more of the cold circuit and the hot circuit.

[0016] Preferably, the simulation system further comprises a controller;

[0017] The controller is electrically connected to the cold water tank, the first circulation pump, the first heater, the hot water tank, the second circulation pump, the second heater, at least one temperature sensor, at least one flow meter, and the hand valve respectively.

[0018] In a second aspect, an embodiment of the present application further provides a method for simulating cold and hot loads of a semiconductor etching process, wherein the simulation method is applied to a simulation system as claimed in any one of claims 1 to 5;

[0019] The simulation method comprises:

[0020] Adjusting the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold loop, and determining the power of the heat load of the etching process based on the adjusted opening of the first proportional valve and the opening time period of the first proportional valve;

[0021] or,

[0022] The opening of the second proportional valve is adjusted based on the current return end temperature and the expected return end temperature of the heat loop, and the power of the cold load of the etching process is determined based on the adjusted opening of the second proportional valve and the opening time period of the second proportional valve.

[0023] Preferably, adjusting the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold circuit includes:

[0024] Get the current return end temperature of the cold circuit;

[0025] Determine the return end temperature change rate of the cold circuit according to the current return end temperature of the cold circuit and the expected return end temperature;

[0026] Determining the flow rate of the liquid in the hot circuit flowing through the first proportional valve according to the return end temperature change rate;

[0027] According to the flow rate, adjusting the opening of the first proportional valve;

[0028] The adjusting the opening of the second proportional valve based on the current return end temperature and the expected return end temperature of the thermal circuit includes:

[0029] Get the current return end temperature of the heat circuit;

[0030] Determine the return end temperature change rate of the heat loop according to the current return end temperature of the heat loop and the expected return end temperature;

[0031] Determining the flow rate of the liquid in the hot circuit flowing through the second proportional valve according to the return end temperature change rate;

[0032] The opening of the second proportional valve is adjusted according to the flow rate.

[0033] Preferably, determining the power of the heat load of the etching process based on the adjusted opening of the first proportional valve and the opening time period of the first proportional valve includes:

[0034] Obtaining an opening time period of a first proportional valve;

[0035] Determining the total flow rate of the liquid in the thermal circuit flowing through the first proportional valve during the opening time period according to the adjusted opening degree of the first proportional valve;

[0036] Based on the total flow rate and a preset power model, the power of the heat load of the etching process is determined.

[0037] The method of determining the power of the cold load of the etching process based on the adjusted opening degree of the second proportional valve and the opening time period of the second proportional valve comprises:

[0038] Obtaining an opening time period of the second proportional valve;

[0039] Determining the total flow rate of the liquid in the cold circuit flowing through the second proportional valve during the opening time period according to the adjusted opening degree of the second proportional valve;

[0040] Based on the total flow and a preset power model, the power of the cold load of the etching process is determined.

[0041] In a third aspect, an embodiment of the present application further provides a controller, the controller comprising:

[0042] A cold load power determination module, which adjusts the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold loop, and determines the power of the cold load of the etching process based on the adjusted opening of the first proportional valve and the opening time period of the first proportional valve;

[0043] The heat load power determination module adjusts the opening of the second proportional valve based on the current return end temperature and the expected return end temperature of the heat loop, and determines the power of the heat load of the etching process based on the adjusted opening of the second proportional valve and the opening time period of the second proportional valve.

[0044] Preferably, when the cold load power determination module is used to adjust the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold circuit, the cold load power determination module is specifically used to:

[0045] Get the current return end temperature of the cold circuit;

[0046] Determine the return end temperature change rate of the cold circuit according to the current return end temperature of the cold circuit and the expected return end temperature;

[0047] Determining the flow rate of the liquid in the hot circuit flowing through the first proportional valve according to the return end temperature change rate;

[0048] According to the flow rate, adjusting the opening of the first proportional valve;

[0049] When the heat load power determination module is used to adjust the opening of the second proportional valve based on the current return end temperature and the expected return end temperature of the heat circuit, the heat load power determination module is specifically used to:

[0050] Get the current return end temperature of the heat circuit;

[0051] Determine the return end temperature change rate of the heat loop according to the current return end temperature of the heat loop and the expected return end temperature;

[0052] Determining the flow rate of the liquid in the hot circuit flowing through the second proportional valve according to the return end temperature change rate;

[0053] The opening of the second proportional valve is adjusted according to the flow rate.

[0054] The embodiments of the present application provide a method and system for simulating the cold and hot loads of a semiconductor etching process. Based on the current reflux end temperature and the expected reflux end temperature of the cold loop, the opening of the first proportional valve is adjusted, and based on the adjusted opening of the first proportional valve and the opening time period of the first proportional valve, the power of the cold load of the etching process is determined; or, based on the current reflux end temperature and the expected reflux end temperature of the hot loop, the opening of the second proportional valve is adjusted, and based on the adjusted opening of the second proportional valve and the opening time period of the second proportional valve, the power of the hot load of the etching process is determined. In this way, not only the use of heaters is reduced, thereby saving energy consumption, but also the complex configuration of the refrigeration system is avoided, simplifying the difficulty of operating the simulated load.

[0055] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0057] Figure 1 A schematic diagram of the structure of a semiconductor etching process cold and hot load simulation system provided by an embodiment of the present application is shown;

[0058] Figure 2 One of the flow charts of a method for simulating cold and hot loads of a semiconductor etching process provided in an embodiment of the present application is shown;

[0059] Figure 3 A second flowchart of a method for simulating cold and hot loads of a semiconductor etching process provided in an embodiment of the present application is shown;

[0060] Figure 4 A schematic diagram of the structure of a controller provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0061] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of explanation and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn in real proportion. The flowchart used in this application shows the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowchart can be implemented out of sequence, and the steps without logical context can be reversed in order or implemented simultaneously. In addition, those skilled in the art, under the guidance of the content of the present application, can add one or more other operations to the flowchart, or remove one or more operations from the flowchart.

[0062] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0063] In order to enable those skilled in the art to use the contents of this application, the following implementation is given in combination with the specific application scenario "cold and hot load simulation". For those skilled in the art, the general principles defined here can be applied to other embodiments and application scenarios without departing from the spirit and scope of this application.

[0064] The following methods, devices, electronic devices or computer-readable storage media of the embodiments of the present application can be applied to any scenario requiring cold and hot load simulation. The embodiments of the present application are not limited to specific application scenarios. Any scheme using the cold and hot load simulation method and device provided by the embodiments of the present application is within the protection scope of the present application.

[0065] It should be noted that the term "comprising" will be used in the embodiments of the present application to indicate the existence of the features declared thereafter, but does not exclude the addition of other features.

[0066] In the semiconductor etching process, in order to meet the needs of rapid switching of temperature environments during high aspect ratio etching and cleaning, semiconductor temperature control equipment needs to pass a simulated load test before leaving the factory to ensure that the semiconductor temperature control equipment has high responsiveness and stability to drastic temperature changes. The existing simulated load test method uses a pulse width modulation control method to control the output power of the heater, thereby simulating the thermal load of the etching process. However, the heater simulated load cannot simulate the cold load. Due to the limitation of heat conduction, it is difficult to simulate the drastic changes in the thermal load, and the energy consumption is high during long-term operation tests.

[0067] In response to the above problems, the embodiments of the present application provide a method and system for simulating the cold and hot loads of a semiconductor etching process, which not only reduces the use of heaters and thus saves energy, but also avoids the complex configuration of the refrigeration system and simplifies the operational difficulty of the simulated load.

[0068] To facilitate the understanding of the present application, the technical solution provided by the present application is described in detail below in conjunction with specific embodiments.

[0069] See also Figure 1 , Figure 1 A schematic diagram of the structure of a semiconductor etching process cold and hot load simulation system provided in an embodiment of the present application.

[0070] In the semiconductor etching process, the demand for high aspect ratio etching process is increasing. In the etching process, the environment of the electrostatic tray needs to be at a lower temperature; in the cleaning process, a higher temperature is required. In order to improve production efficiency, the waiting time between the etching and cleaning steps is required to be very short. During the conversion between etching and cleaning, the hot and cold loads of the process chamber will change greatly. In response to this drastic change in load, semiconductor temperature control equipment must have a sufficiently high response speed and stability.

[0071] The analysis of the actual etching process heat load data shows that there are two drastic load changes when the etching and cleaning steps are switched: when switching from the etching step to the cleaning step, a cold load of 15kW will appear within 30 seconds. When switching from the cleaning step to the etching step, a hot load of 7kW will appear within 60 seconds.

[0072] like Figure 1 As shown in , the simulation system includes: a cold circuit 1, a hot circuit 2, a first proportional valve 4, a second proportional valve 3 and a controller;

[0073] The water supply end of the cold circuit 1 is connected to one end of the first proportional valve 4, the other end of the first proportional valve 4 is connected to the return end of the hot circuit 2, the return end of the cold circuit 1 is connected to one end of the second proportional valve 3, the other end of the second proportional valve 3 is connected to the water supply end of the hot circuit 2, and the controller is electrically connected to the first proportional valve 4 and the second proportional valve 3, respectively.

[0074] The cold circuit 1 integrates a cold water tank 11, a first circulation pump 12, a first three-way pipe 13 and a first heater 14 which are connected in sequence through pipelines; wherein the water outlet of the cold water tank 11 is connected to the water inlet of the first circulation pump 12, the water supply end of the first circulation pump 12 is connected to the first end 131 of the first three-way pipe 13, the second end 132 of the first three-way pipe 13 is connected to one end of the first heater 14, the other end of the first heater 14 is connected to the return end of the cold water tank 11, the third end 133 of the first three-way pipe 13 is connected to one end of the first proportional valve 4, and one end of the second proportional valve 3 is connected to the other end of the first heater 14. Here, the cold water tank 11 stores cold liquid for low temperature requirements during etching. The first circulation pump 12 is used to promote the circulation of cold liquid in the system. The first heater 14 is used to heat the liquid of the cold circuit 1 when simulating heat load.

[0075] The heat circuit 2 integrates a hot water tank 21, a second circulation pump 22, a second three-way pipe 23 and a second heater 24 which are connected in sequence through pipelines; wherein the water outlet of the hot water tank 21 is connected to the water inlet of the second circulation pump 22, the water supply end of the second circulation pump 22 is connected to the first end 231 of the second three-way pipe 23, the second end 232 of the second three-way pipe 23 is connected to one end of the second heater 24, the other end of the second heater 24 is connected to the return end of the hot water tank 21, the third end 233 of the second three-way pipe 23 is connected to the other end of the second proportional valve 3, and the other end of the first proportional valve 4 is connected to the other end of the first heater 14. Here, the hot water tank 21 stores hot liquid for high temperature requirements during cleaning. The second circulation pump 22 is used to promote the circulation of hot liquid in the system. The second heater 24 is used to heat the liquid of the heat circuit 2 when simulating heat load.

[0076] The simulation system further includes a hand valve 5; one end of the hand valve 5 is connected to the water outlet of the cold water tank 11, and the other end of the hand valve 5 is connected to the water outlet of the hot water tank 21. Here, the hand valve 5 is used to maintain the liquid level balance of the cold and hot water tanks. During the normal operation of the simulation system, the hand valve 5 is in an open state. The hand valve 5 is closed only when maintenance work is carried out on a single circuit.

[0077] The simulation system further includes at least one temperature sensor, which is respectively arranged in one or more of the cold circuit 1 and the hot circuit 2. As an example, Figure 1As shown in , the present application is provided with a first outlet temperature sensor 61 in the cold circuit 1, and the detection end of the first outlet temperature sensor 61 is connected to the other end of the first circulation pump 12, for detecting the temperature of the water outlet of the cold circuit 1; a first return temperature sensor 62 is also provided in the cold circuit 1, and the detection end of the first return temperature sensor 62 is connected to the return end of the cold water tank 11, for detecting the temperature of the return end of the cold circuit 1. The present application is provided with a second outlet temperature sensor 63 in the hot circuit 2, and the detection end of the second outlet temperature sensor 63 is connected to the other end of the second circulation pump 22, for detecting the temperature of the water outlet of the cold circuit 1; a second return temperature sensor 64 is also provided in the hot circuit 2, and the detection end of the second return temperature sensor 64 is connected to the return end of the hot water tank 21, for detecting the temperature of the return end of the hot circuit 2.

[0078] The simulation system further comprises at least one flow meter, which is respectively arranged in one or more of the cold circuit 1 and the hot circuit 2. As an example, Figure 1 As shown in the figure, the present application is provided with a first flow meter 71 in the cold circuit 1, and the detection end of the first flow meter 71 is connected to the other end of the first circulation pump 12, which is used to detect the flow rate of the liquid in the pipeline of the cold circuit 1; the present application is provided with a second flow meter 72 in the hot circuit 2, and the detection end of the first flow meter 72 is connected to the other end of the second circulation pump 22, which is used to detect the flow rate of the liquid in the pipeline of the hot circuit 2.

[0079] The simulation system also includes a controller; the controller is electrically connected to the cold water tank 11, the first circulation pump 12, the first heater 14, the hot water tank 21, the second circulation pump 22, the second heater 24, at least one temperature sensor, at least one flow meter, and the hand valve 5.

[0080] See also Figure 2 , Figure 2 This is one of the flow charts of a method for simulating cold and hot loads of a semiconductor etching process provided in an embodiment of the present application.

[0081] like Figure 2 As shown in , the simulation method is applied to a simulation system, and the simulation method includes:

[0082] Step S101, adjusting the opening of the first proportional valve 4 based on the current return end temperature and the expected return end temperature of the cold circuit 1.

[0083] Here, when switching from the cleaning step to the etching step, the liquid in the hot water tank 21 enters the cold circuit 1 through the first proportional valve 4 to quickly increase the temperature to achieve thermal load simulation.

[0084] Regarding step S101, in specific implementation, as an example, the following steps may be included:

[0085] First, the current return end temperature of cold circuit 1 is obtained.

[0086] Then, the return end temperature change rate of the cold loop 1 is determined according to the current return end temperature and the expected return end temperature of the cold loop 1. Here, the present application obtains the curve of the heat load in the actual etching process, and simulates the slope and the limit temperature of the change curve of the heat load by controlling the opening of the first proportional valve 4, that is, the return end temperature change rate of the cold loop 1 is the slope of the change curve of the heat load.

[0087] Subsequently, the flow rate of the liquid in the heat circuit 2 flowing through the first proportional valve 4 is determined according to the return end temperature change rate.

[0088] Finally, according to the flow rate, the opening of the first proportional valve 4 is adjusted. Here, the rate of temperature rise or fall is controlled by the proportional valve, and the opening of the first proportional valve 4 affects the flow rate of hot liquid mixed into the cold liquid. When the opening of the first proportional valve 4 is small, the flow rate of hot liquid flowing into the return end of the cold circuit 1 is small, and the influence of hot liquid on the temperature of the cold liquid changes slowly; as the opening of the first proportional valve 4 gradually increases, the flow rate of hot liquid increases, and the speed of cold liquid temperature decreases will accelerate. As an example, assuming that the initial temperature of the cold liquid at the return end of the cold circuit 1 is -10°C, and the temperature of the hot liquid in the hot circuit 2 is 30°C, if the opening of the first proportional valve 4 is 10%, the hot liquid is mixed into the cold liquid at a small flow rate, and the temperature of the cold liquid rises by 2°C in 1 minute; when the opening of the first proportional valve 4 increases to 50%, the flow rate of hot liquid increases, and the temperature of the cold liquid rises by 8°C in 1 minute. In this way, different proportional valve openings simulate the slope of the thermal load curve.

[0089] This application adopts PID automatic control algorithm to realize the opening control of the proportional valve. Specifically, the difference between the current return end temperature and the expected return end temperature of the cold circuit 1 is amplified and fed back through the PID proportional control item, the long-term difference is eliminated through the PID integral control item, and the changing trend of the difference is predicted through the PID differential control item.

[0090] Step S102 : determining the power of the cold load of the etching process based on the adjusted opening degree of the first proportional valve 4 and the opening time period of the first proportional valve 4 .

[0091] Regarding step S102, in specific implementation, as an example, the following steps may be included:

[0092] Firstly, the opening time period of the first proportional valve 4 is obtained.

[0093] Then, according to the adjusted opening of the first proportional valve 4, the total flow rate of the liquid in the heat circuit 2 flowing through the first proportional valve 4 during the opening time period is determined. Here, according to the opening time period of the first proportional valve 4, the flow rate of the liquid in the current heat circuit 2 flowing through the first proportional valve 4 is discretely integrated in real time to obtain the total flow rate of the current mixed liquid. The present application determines the total flow rate of the mixed liquid in the actual etching process heat load process as the preset flow rate. When the total flow rate of the mixed liquid reaches the preset flow rate, the first proportional valve 4 is closed, thereby realizing the control of the overall exchange heat. As an example, the preset flow rate of the present application is set to 4L.

[0094] Finally, based on the total flow and the preset power model, the power of the cold load of the etching process is determined. Here, the preset power model is constructed by the liquid specific heat, liquid density, liquid flow and the temperature difference between the water supply end and the return end. As an example, the preset power model expression is shown in formula (1):

[0095] P=CρFΔT (1)

[0096] Where P is the power of the heat load, C is the liquid specific heat, ρ is the liquid density, F is the liquid flow rate, and ΔT is the temperature difference between the supply end and the return end. Substituting the liquid flow rate and the difference between the initial return end temperature and the desired return end temperature into formula (1), the power of the heat load is obtained.

[0097] Next, we use a specific example to illustrate the above simulation method:

[0098] First, the controller obtains the current return end temperature of the cold loop 1. Assuming that the expected return end temperature is -15°C, the controller controls to open the cold water tank 11, the hot water tank 21, the first circulation pump 12 and the second circulation pump 22. The controller controls the first heater 14 to heat the liquid in the cold loop 1 according to the expected return end temperature, and controls the second heater 24 to heat the liquid in the hot loop 2. According to the current return end temperature of the cold loop 1 and the rate of change of the expected return end temperature, the controller controls to open the first proportional valve 4, so that the 35°C liquid in the hot loop 2 is mixed with the liquid in the cold loop 1 through the first proportional valve 4. When the total flow through the first proportional valve 4 reaches 4L, the valve is closed to realize the simulation of the thermal load.

[0099] See also Figure 3 , Figure 3 This is a second flow chart of a method for simulating cold and hot loads of a semiconductor etching process provided in an embodiment of the present application.

[0100] like Figure 3 As shown in , the simulation method is applied to a simulation system, and the simulation method includes:

[0101] Step S201, adjusting the opening of the second proportional valve 3 based on the current return end temperature and the expected return end temperature of the thermal circuit 2.

[0102] Here, when switching from the etching step to the cleaning step, the liquid in the cold water tank 11 enters the heat circuit 2 through the second proportional valve 3 to quickly reduce the temperature and realize the cold load simulation.

[0103] Regarding step S201, in specific implementation, as an example, the following steps may be included:

[0104] First, the current return end temperature of heat loop 2 is obtained.

[0105] Then, the return end temperature change rate of the heat loop 2 is determined according to the current return end temperature and the expected return end temperature of the heat loop 2. Here, the present application obtains the curve of the cold load in the actual etching process, and simulates the slope and the limit temperature of the change curve of the cold load by controlling the opening of the second proportional valve 3, that is, the return end temperature change rate of the heat loop 2 is the slope of the change curve of the cold load.

[0106] Subsequently, the flow rate of the liquid in the heat circuit 2 flowing through the second proportional valve 3 is determined according to the return end temperature change rate.

[0107] Finally, the opening degree of the second proportional valve 3 is adjusted according to the flow rate.

[0108] Step S202, based on the current return end temperature and the expected return end temperature of the heat loop 2, adjust the opening of the second proportional valve 3, and determine the power of the heat load of the etching process based on the adjusted opening of the second proportional valve 3 and the opening time period of the second proportional valve 3.

[0109] Regarding step S202, in specific implementation, as an example, the following steps may be included:

[0110] First, the opening time period of the second proportional valve 3 is obtained.

[0111] Then, according to the adjusted opening degree of the second proportional valve 3, the total flow rate of the liquid in the cold circuit 1 flowing through the second proportional valve 3 during the opening time period is determined.

[0112] Finally, based on the total flow rate and a preset power model, the power of the heat load of the etching process is determined.

[0113] Next, we use a specific example to illustrate the above simulation method:

[0114] First, the controller obtains the current return end temperature of the heat circuit 2. Assuming that the expected return end temperature is 35°C, the controller controls the opening of the cold water tank 11, the hot water tank 21, the first circulation pump 12 and the second circulation pump 22. According to the current return end temperature of the heat circuit 2 and the change rate of the expected return end temperature, the controller controls the opening of the second proportional valve 3, so that the 15°C liquid of the cold circuit 1 is mixed with the liquid of the heat circuit 2 through the first proportional valve 4. When the total flow through the second proportional valve 3 reaches 4L, the valve is closed to realize the simulation of the cold load.

[0115] An embodiment of the present application provides a method for simulating hot and cold loads of a semiconductor etching process. Through the method, not only the use of heaters is reduced to save energy, but also the complex configuration of the refrigeration system is avoided, simplifying the difficulty of operating the simulated load.

[0116] Figure 4 A schematic diagram of the structure of a controller provided in an embodiment of the present application is shown.

[0117] like Figure 4 As shown in , the controller 410 includes:

[0118] The cold load power determination module 411 adjusts the opening of the first proportional valve 4 based on the current return end temperature and the expected return end temperature of the cold loop 1, and determines the power of the cold load of the etching process based on the adjusted opening of the first proportional valve 4 and the opening time period of the first proportional valve 4;

[0119] The thermal load power determination module 412 adjusts the opening of the second proportional valve 3 based on the current return end temperature and the expected return end temperature of the thermal loop 2, and determines the power of the thermal load of the etching process based on the adjusted opening of the second proportional valve 3 and the opening time period of the second proportional valve 3.

[0120] When the cold load power determination module 411 is used to adjust the opening of the first proportional valve 4 based on the current return end temperature and the expected return end temperature of the cold circuit 1, the cold load power determination module 411 is specifically used to:

[0121] Obtain the current return end temperature of the cold circuit 1; determine the return end temperature change rate of the cold circuit 1 according to the current return end temperature of the cold circuit 1 and the expected return end temperature; determine the flow rate of the liquid of the hot circuit 2 flowing through the first proportional valve 4 according to the return end temperature change rate; adjust the opening of the first proportional valve 4 according to the flow rate;

[0122] When the heat load power determination module 412 is used to adjust the opening of the second proportional valve 3 based on the current return end temperature and the expected return end temperature of the heat circuit 2, the heat load power determination module 412 is specifically used to:

[0123] Obtain the current return end temperature of the heat circuit 2; determine the return end temperature change rate of the heat circuit 2 according to the current return end temperature of the heat circuit 2 and the expected return end temperature; determine the flow rate of the liquid in the heat circuit 2 flowing through the second proportional valve 3 according to the return end temperature change rate; and adjust the opening of the second proportional valve 3 according to the flow rate.

[0124] When the heat load power determination module 411 is used to determine the power of the heat load of the etching process based on the adjusted opening degree of the first proportional valve 4 and the opening time period of the first proportional valve 4, the heat load power determination module 411 is specifically used to:

[0125] Obtain the opening time period of the first proportional valve 4; determine the total flow rate of the liquid in the heat circuit 2 flowing through the first proportional valve 4 during the opening time period according to the adjusted opening degree of the first proportional valve 4; determine the power of the thermal load of the etching process based on the total flow rate and a preset power model.

[0126] When the cold load power determination module 412 is used to determine the power of the heat load of the etching process based on the adjusted opening degree of the first proportional valve 4 and the opening time period of the first proportional valve 4, the cold load power determination module 412 is specifically used to:

[0127] Obtain the opening time period of the second proportional valve 3; determine the total flow rate of liquid in the cold circuit 1 flowing through the second proportional valve 3 during the opening time period according to the adjusted opening degree of the second proportional valve 3; determine the power of the cold load of the etching process based on the total flow rate and a preset power model.

[0128] Those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the system and device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here. In the several embodiments provided in the present application, it should be understood that the disclosed system, device and method can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0129] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0130] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0131] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a number of instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc., various media that can store program codes.

[0132] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A simulation system for hot and cold loads of semiconductor etching process, characterized in that: The simulation system comprises: a cold circuit, a hot circuit, a first proportional valve, a second proportional valve and a controller; The water supply end of the cold circuit is connected to one end of the first proportional valve, the other end of the first proportional valve is connected to the return end of the hot circuit, the return end of the cold circuit is connected to one end of the second proportional valve, the other end of the second proportional valve is connected to the water supply end of the hot circuit, and the controller is electrically connected to the first proportional valve and the second proportional valve, respectively.

2. The simulation system according to claim 1, characterized in that The cold circuit integrates a cold water tank, a first circulation pump, a first three-way pipe and a first heater which are sequentially connected through pipelines; The water outlet of the cold water tank is connected to the water inlet of the first circulation pump, the water supply end of the first circulation pump is connected to the first end of the first three-way pipe, the second end of the first three-way pipe is connected to one end of the first heater, the other end of the first heater is connected to the return end of the cold water tank, the third end of the first three-way pipe is connected to one end of the first proportional valve, and one end of the second proportional valve is connected to the other end of the first heater; The heat circuit integrates a hot water tank, a second circulation pump, a second tee pipe and a second heater which are sequentially connected through pipelines; Among them, the water outlet end of the hot water tank is connected to the water inlet end of the second circulation pump, the water supply end of the second circulation pump is connected to the first end of the second three-way pipe, the second end of the second three-way pipe is connected to one end of the second heater, the other end of the second heater is connected to the reflux end of the hot water tank, the third end of the second three-way pipe is connected to the other end of the second proportional valve, and the other end of the first proportional valve is connected to the other end of the first heater.

3. The simulation system according to claim 1, characterized in that: The simulation system also includes a hand valve; One end of the hand valve is connected to the water outlet end of the cold water tank, and the other end of the hand valve is connected to the water outlet end of the hot water tank.

4. The simulation system according to claim 1, characterized in that: The simulation system further comprises at least one temperature sensor, which is respectively arranged in one or more of the cold circuit and the hot circuit.

5. The simulation system according to claim 1, characterized in that: The simulation system further includes at least one flow meter, which is respectively arranged in one or more of the cold circuit and the hot circuit.

6. A method for simulating hot and cold loads of a semiconductor etching process, characterized in that: The simulation method is applied to the simulation system as claimed in any one of claims 1 to 5; The simulation method comprises: Adjusting the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold loop, and determining the power of the heat load of the etching process based on the adjusted opening of the first proportional valve and the opening time period of the first proportional valve; and / or, The opening of the second proportional valve is adjusted based on the current return end temperature and the expected return end temperature of the heat loop, and the power of the cold load of the etching process is determined based on the adjusted opening of the second proportional valve and the opening time period of the second proportional valve.

7. The simulation method according to claim 6, characterized in that: The adjusting the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold circuit comprises: Get the current return end temperature of the cold circuit; Determine the return end temperature change rate of the cold circuit according to the current return end temperature of the cold circuit and the expected return end temperature; Determining the flow rate of the liquid in the hot circuit flowing through the first proportional valve according to the return end temperature change rate; According to the flow rate, adjusting the opening of the first proportional valve; The adjusting the opening of the second proportional valve based on the current return end temperature and the expected return end temperature of the thermal circuit includes: Get the current return end temperature of the heat circuit; Determine the return end temperature change rate of the heat loop according to the current return end temperature of the heat loop and the expected return end temperature; Determining the flow rate of the liquid in the hot circuit flowing through the second proportional valve according to the return end temperature change rate; The opening of the second proportional valve is adjusted according to the flow rate.

8. The simulation method according to claim 6, characterized in that: The step of determining the power of the heat load of the etching process based on the adjusted opening degree of the first proportional valve and the opening time period of the first proportional valve comprises: Obtaining an opening time period of a first proportional valve; Determining the total flow rate of the liquid in the thermal circuit flowing through the first proportional valve during the opening time period according to the adjusted opening degree of the first proportional valve; Determining the power of the heat load of the etching process based on the total flow and a preset power model; The method of determining the power of the cold load of the etching process based on the adjusted opening degree of the second proportional valve and the opening time period of the second proportional valve comprises: Obtaining an opening time period of the second proportional valve; Determining the total flow rate of the liquid in the cold circuit flowing through the second proportional valve during the opening time period according to the adjusted opening degree of the second proportional valve; Based on the total flow and a preset power model, the power of the cold load of the etching process is determined.

9. A controller, characterized in that: The controller comprises: A cold load power determination module, which adjusts the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold loop, and determines the power of the cold load of the etching process based on the adjusted opening of the first proportional valve and the opening time period of the first proportional valve; The heat load power determination module adjusts the opening of the second proportional valve based on the current return end temperature and the expected return end temperature of the heat loop, and determines the power of the heat load of the etching process based on the adjusted opening of the second proportional valve and the opening time period of the second proportional valve.

10. The controller according to claim 9, characterized in that: When the cold load power determination module is used to adjust the opening of the first proportional valve based on the current return end temperature and the expected return end temperature of the cold circuit, the cold load power determination module is specifically used to: Get the current return end temperature of the cold circuit; Determine the return end temperature change rate of the cold circuit according to the current return end temperature of the cold circuit and the expected return end temperature; Determining the flow rate of the liquid in the hot circuit flowing through the first proportional valve according to the return end temperature change rate; According to the flow rate, adjusting the opening of the first proportional valve; When the heat load power determination module is used to adjust the opening of the second proportional valve based on the current return end temperature and the expected return end temperature of the heat circuit, the heat load power determination module is specifically used to: Get the current return end temperature of the heat circuit; Determine the return end temperature change rate of the heat loop according to the current return end temperature of the heat loop and the expected return end temperature; Determining the flow rate of the liquid in the hot circuit flowing through the second proportional valve according to the return end temperature change rate; The opening of the second proportional valve is adjusted according to the flow rate.

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