Casing of ion source device, ion source device and ion implanter

Abstract

The present application discloses a shell of an ion source device, an ion source device and an ion implanter. The shell includes a first end and a second end, a mounting hole is provided in the shell, a cooling channel is provided in the shell, and the cooling channel includes a first path, a second path and a third path. The first path and the second path extend along the extension direction of the shell, and the second path and the first path are respectively used for input and output of cooling liquid; the two ends of the third path are respectively connected to the first path and the second path, and the third path is at least partially arranged around the mounting hole; the distance between the end face of the third path and the first end along the extension direction of the shell is the pipeline insertion length, the length of the shell along its extension direction is the shell length, and a ratio range of the pipeline insertion length to the shell length is set. The ion source device includes the above-mentioned shell, crucible and arc chamber. The ion implanter includes the above-mentioned ion source device. Through the above-mentioned arrangement, the service life of the crucible and the arc chamber is improved.

Description

Technical Field

[0001] The present application relates to the technical field of integrated circuit manufacturing equipment, and in particular to a housing of an ion source device, an ion source device and an ion implanter. Background Art

[0002] The ion source is a device that ionizes neutral atoms or molecules and draws out ion beams from them. It is an indispensable part of the ion implanter.

[0003] In the current technology, the ion source includes an arc chamber, a crucible, a cathode, a filament, a shell, etc. Among them, since the arc chamber and the crucible are respectively installed at the two ends of the shell, and the environment where the shell is located is basically a vacuum or an environment filled with inert gas, the heat generated by the arc chamber can only be transferred from one end of the shell that contacts the arc chamber to the other end of the shell, and will not be directly transferred to the crucible.

[0004] Therefore, in the current technology, the outer shell is generally cooled by a cooling water circuit, so that the heat transferred from the arc chamber to the outer shell does not affect the normal operation of the crucible.

[0005] For example, the U.S. patent "US8796649B2" describes an ion implanter, which includes a support, a cover assembly, an arc chamber column, an arc chamber, an electrode assembly for the arc chamber, and an electrode assembly for the cover assembly. During operation, the support and electrode assembly of the ion implanter are cooled by circulating a coolant through these components. Specifically, in the above patent, a cooling channel for filling a coolant is provided in the support, and the inlet and outlet of the cooling channel are both located at one end of the support where a flange is provided, and the cooling channel also passes through one end of the support away from the flange.

[0006] However, the cooling effect of the cooling channel in the above patent is insufficient, and at the same time causes excessive cooling of the arc chamber, thereby affecting the service life of the crucible and the arc chamber.

[0007] Therefore, how to arrange cooling channels to increase the service life of the crucible and the arc chamber is a technical problem that needs to be solved urgently in the art. Summary of the invention

[0008] In order to solve the deficiencies of the prior art, the purpose of the present application is to provide a housing of an ion source device, an ion source device and an ion implanter, wherein the crucible and arc chamber thereof have a longer service life.

[0009] To achieve the above objectives, this application adopts the following technical solutions:

[0010] The invention discloses a shell of an ion source device, comprising a first end and a second end distributed along an extension direction thereof, a mounting hole penetrating the shell along the extension direction thereof, a cooling channel with a built-in coolant arranged in the shell, the cooling channel comprising a first path, a second path and a third path, the first path extending along the extension direction of the shell; the second path extending along the extension direction of the shell, one end of the second path and one end of the first path both being located at the first end and respectively used for input and output of the coolant; two ends of the third path respectively connecting the other end of the first path and the other end of the second path, the third path at least partially arranged around the mounting hole; the distance between the end face of the third path and the first end along the extension direction of the shell is the pipeline insertion length, the length of the shell along the extension direction is the shell length, and the ratio of the pipeline insertion length to the shell length is in a range of 0.4 to 0.55.

[0011] Furthermore, the length of the pipeline extending into the housing ranges from 80 mm to 100 mm.

[0012] Further, the cross-sections of the third path, the second path and the first path are all circular holes, and the diameters of the third path, the second path and the first path are all in the range of 5 mm to 6 mm.

[0013] Furthermore, a preset plane perpendicular to the extension direction of the shell is defined, and the third path is arranged parallel to the preset plane.

[0014] Furthermore, the shell includes an outer surface located between the first end and the second end, a section of the outer surface cut by a preset plane is a shell section, and an extension direction of the third path is consistent with an extension direction of an outer contour of the shell section.

[0015] Furthermore, the outer surface includes interconnected curved surfaces and planes, the third path includes a straight line segment, a first arc segment and a second arc segment, the straight line segment is arranged parallel to the plane, two ends of the first arc segment are respectively connected to the first path and one end of the straight line segment, and two ends of the second arc segment are respectively connected to the second path and the other end of the straight line segment.

[0016] Furthermore, the minimum distance between the straight segment and the plane ranges from 3.5 mm to 5.5 mm; and / or, the minimum distance between the first arc segment and the curved surface ranges from 2.5 mm to 3.5 mm; and / or, the minimum distance between the second arc segment and the curved surface ranges from 2.5 mm to 3.5 mm.

[0017] Further, the minimum distance between the third path and the mounting hole ranges from 2 mm to 3.5 mm.

[0018] Furthermore, the shell includes a first part and a second part distributed along its extension direction, the first part and the second part are fixedly connected, the first end is located on the first part, and the second end is located on the second part; the first path and the second path are both located in the first part, and the third path includes a first groove body located in the first part and a second groove body located in the second part. When the first part and the second part are fixedly connected, the first groove body and the second groove body can be spliced ​​to form the third path.

[0019] To achieve the above objectives, this application adopts the following technical solutions:

[0020] An ion source device comprises the above-mentioned shell, crucible, arc chamber, special gas pipeline and electrode assembly, wherein the crucible is at least partially located in the mounting hole of the shell and does not contact the inner wall of the mounting hole, and the crucible is fixed to the first end of the shell; the arc chamber is installed at the second end of the shell and communicated with the crucible; the special gas pipeline is installed in the shell and communicated with the arc chamber to transport process gas into the arc chamber; the electrode assembly is installed in the shell and at least partially located in the arc chamber to ionize gaseous particles.

[0021] To achieve the above objectives, this application adopts the following technical solutions:

[0022] An ion implanter comprises the shell of the ion source device mentioned above.

[0023] The housing of the ion source device, the ion source device and the ion implanter can be provided with a cooling channel for cooling in the housing to achieve cooling of the housing, and the cooling channel includes a first path, a second path and a third path, wherein the first path and the second path both extend along the extension direction of the housing, the third path is at least partially arranged around the mounting hole, and a ratio range of the pipe extension length of the third path to the shell length of the housing is set, so as to avoid the above ratio range being too large and causing the third path to be too close to the arc chamber, thereby avoiding insufficient ionization of gaseous particles in the arc chamber and deposition in the arc chamber, and then improving the service life of the arc chamber and the ion source device. In addition, through the above arrangement, it is possible to avoid the above ratio range being too small and causing insufficient cooling of the housing, thereby avoiding the temperature of the crucible being higher than its working temperature, and then making the working temperature of the crucible be in the optimal working temperature range, and then improving the service life of the crucible. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the structure of an ion source device provided in an embodiment of the present application.

[0025] Figure 2 A partial cross-sectional view of an ion source device provided in an embodiment of the present application.

[0026] Figure 3 A side cross-sectional view of an ion source device provided in an embodiment of the present application.

[0027] Figure 4 This is a first temperature simulation diagram of the ion source device provided in an embodiment of the present application.

[0028] Figure 5 This is a temperature simulation diagram of an ion source device in the prior art.

[0029] Figure 6 A partial structural cross-sectional view of an ion source device provided in an embodiment of the present application.

[0030] Figure 7 This is a second temperature simulation diagram of the ion source device provided in an embodiment of the present application.

[0031] Figure 8 This is a third temperature simulation diagram of the ion source device provided in an embodiment of the present application.

[0032] Fig. 9 A schematic diagram of the first part and the second part of the ion source device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation manner of the present application will be clearly and completely described below in conjunction with the drawings in the implementation manner of the present application.

[0034] It should be noted that the words "first", "second" and similar words used in the specification and claims of this application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "a" do not indicate a quantitative limitation, but indicate the existence of at least one. "Multiple" or "several" means at least two. Unless otherwise specified, words such as "front", "back", "left", "right", "bottom" and / or "top" are only for the convenience of description and are not limited to one position or one spatial orientation. Words such as "include" or "comprise" mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect.

[0035] The singular forms "a", "said" and "the" used in this specification and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0036] The present application provides an ion implanter, which includes an ion source device 100, an extraction electrode, a mass analyzer, an acceleration tube and other structures. The ion source device 100 is used to ionize a preset element into ions, and extract the ionized ions to the mass analyzer through the extraction electrode, so that the mass analyzer can separate the required impurity ions from the mixed ion beam. The acceleration tube is used to accelerate the separated impurity ions. The preset elements can be adjusted according to actual needs to obtain element ions that meet actual needs.

[0037] The cooling water path of the current ion source is located outside the ion source housing, which makes the cooling water path too far away from the heat source (i.e., arc chamber) of the ion source, resulting in very limited heat that can be removed by the cooling water path. The above arrangement will cause the heat transferred from the arc chamber to the housing to affect the temperature of the crucible, thereby causing the operating temperature of the crucible to be higher than the optimal temperature range, thereby affecting the life of the crucible.

[0038] Alternatively, the cooling water path of the current ion source is too close to the arc chamber, resulting in the temperature in the arc chamber being too low, which in turn leads to insufficient ionization of the gas in the arc chamber, causing some unreacted gas to be deposited in the arc chamber, thereby reducing the service life of the arc chamber and then the service life of the ion source.

[0039] like Figure 1 and Figure 2 As shown, as an implementation, the ion source device 100 includes a housing 200 , a crucible 11 , an arc chamber 12 , a special gas pipeline 13 and an electrode assembly 14 .

[0040] In order to clearly illustrate the technical solution of this application, the following is also defined: Figure 1 The front, back, left, right, top and bottom shown are used to indicate the front, back, left, right, top and bottom of the ion source device 100 .

[0041] Specifically, the housing 200 serves as the basic frame of the ion source device 100, and is used to carry the crucible 11, the arc chamber 12, the special gas pipeline 13, and the electrode assembly 14. The housing 200 includes a first end 21 and a second end 22 distributed along its extension direction, and the housing 200 is provided with a mounting hole 23 that penetrates the housing 200 along its extension direction. In the present application, the extension direction of the housing 200 is Figure 1 The front-to-back direction.

[0042] The crucible 11 is filled with a preset element, and the crucible 11 can be heated, so that the preset element contained in the crucible 11 forms gaseous particles. The ion source device 100 may also include a heating element located in the crucible 11, such as a resistance wire, so that the heating element can heat the preset element in the crucible 11. It should be noted that the present application does not limit the structure of the heating element.

[0043] The arc chamber 12 is mounted at the second end 22 of the housing 200 and communicates with the crucible 11 , so that the arc chamber 12 can receive gaseous particles in the crucible 11 .

[0044] The special gas pipeline 13 is installed on the housing 200 and is connected to the arc chamber 12, so that the special gas pipeline 13 can transport process gas into the arc chamber 12. Among them, the special gas pipeline 13 is connected to external special gas cabinets and other equipment, so that the special gas cabinets and other equipment can provide process gas for the special gas pipeline 13. In this embodiment, the process gas can be a reaction gas, an auxiliary gas, etc. The reaction gas can participate in the reaction to generate the required ions; the auxiliary gas can combine with the impurity ions generated by the reaction gas to avoid the impurity ions from reacting with the arc chamber 12 itself, thereby increasing the service life of the arc chamber 12. It should be noted that the process gas can also be other gases that need to participate, and this application is not limited.

[0045] The electrode assembly 14 is mounted on the housing 200 and at least partially located in the arc chamber 12. The electrode assembly 14 can ionize the gaseous particles in the arc chamber 12, thereby ionizing the gaseous particles into ions. Optionally, the electrode assembly 14 includes a filament feedthrough, a filament clamp, a filament, a cathode and other structures, so as to achieve ionization of the gaseous particles. It should be noted that the working principle of the electrode assembly 14 to ionize the gaseous particles is a prior art and will not be repeated here.

[0046] In this embodiment, the crucible 11 is at least partially located in the mounting hole 23 of the housing 200 and does not contact the inner wall of the mounting hole 23, and the crucible 11 is fixed to the first end 21 of the housing 200. Since the arc chamber 12 is installed at the second end 22 of the housing 200, and the environment where the housing 200 is located is basically a vacuum or an environment filled with inert gas, the heat generated by the arc chamber 12 can only be transferred from the second end 22 in contact with the arc chamber 12 to the first end 21, and will not be directly transferred to the crucible 11.

[0047] Exemplarily, the outer shell 200 is provided with a pipeline hole 24, which is arranged through the outer shell 200 along the extension direction of the outer shell 200, and the two ends of the pipeline hole 24 are respectively connected to the special gas pipeline 13 and the arc chamber 12, so that the special gas pipeline 13 can transport the process gas to the arc chamber 12 through the pipeline hole 24.

[0048] Specifically, two mounting holes 23 and two crucibles 11 are provided, and each crucible 11 is located in one mounting hole 23 . The pipeline hole 24 is at least partially located between the two mounting holes 23 .

[0049] It should be noted that the present application does not limit the number of mounting holes 23 and crucibles 11 , as long as the number of mounting holes 23 is consistent with the number of crucibles 11 .

[0050] like Figure 2 and Figure 3 As shown, as an implementation, a cooling channel 25 is provided in the housing 200, and the cooling channel 25 is filled with a coolant. The coolant is used to cool the housing 200, so that the heat transferred from the arc chamber 12 to the housing 200 can be dissipated through the coolant. Since the crucible 11 is connected to the first end 21 of the housing 200, the above arrangement can ensure that the heat generated by the arc chamber 12 does not affect the operation of the crucible 11, thereby improving the cooling effect of the arc chamber 12 and the housing 200 and improving the working stability of the crucible 11.

[0051] Specifically, the cooling passage 25 includes a first path 251 , a second path 252 , and a third path 253 .

[0052] The first path 251 extends along the extension direction of the housing 200, and the second path 252 extends along the extension direction of the housing 200. One end of the second path 252 and one end of the first path 251 are both located at the first end 21, so that the first path 251 and the second path 252 can be used for input and output of the cooling liquid, respectively. It should be noted that the cooling liquid can be input from the first path 251 and output from the second path 252, and the cooling liquid can also be input from the second path 252 and output from the first path 251, and the present application does not limit this.

[0053] It should be noted that the first path 251 and the second path 252 can be connected to an external cooling device, so that the cooling device can provide cooling liquid to the cooling channel 25 .

[0054] The two ends of the third path 253 are respectively connected to the other end of the first path 251 and the other end of the second path 252, that is, the third path 253 is respectively connected to the first path 251 and the second path 252 at one end away from the first end 21. Through the above arrangement, the coolant can circulate in the first path 251, the second path 252 and the third path 253, thereby realizing the cooling of the housing 200. It should be noted that in the present application, the heat on the housing 200 comes from the heat transferred by the arc chamber 12.

[0055] The third path 253 is at least partially arranged around the mounting hole 23 , so that the third path 253 can be arranged close to the outer surface 26 of the housing 200 and the length of the third path 253 arranged in the housing 200 can be increased, so as to improve the cooling effect on the housing 200 .

[0056] It should be noted that the cooling channel 25 may be formed by directly opening a channel in the outer shell 200; the cooling channel 25 may also be a pipeline arranged in the opened channel after the channel is opened in the outer shell 200, and the present application does not impose any limitation thereto.

[0057] In order to reflect the technical effect brought by the above configuration, the present application also provides Figure 4 The temperature simulation diagram of the ion source device 100 of the present application shown in FIG. Figure 5 The temperature simulation diagram of the ion source device with an external cooling water circuit is shown in FIG. Figure 4 and Figure 5 In the embodiment, the flow velocity of the coolant is consistent, and the flow areas of the cooling water path and the cooling channel 25 are consistent, that is, except for the different arrangement positions of the cooling water path and the cooling channel 25, there is no other difference between the cooling water path and the cooling channel 25.

[0058] from Figure 4 and Figure 5 It can be known that the shell temperature of the ion source device with an external cooling water circuit is between 101.65°C and 276.54°C, and the shell temperature of the ion source device 100 of the present application is between 61.59°C and 146.04°C. It can be seen that after the cooling channel 25 of the present application is arranged, the maximum temperature of the shell 200 of the present application is lower than the maximum temperature of the shell of the ion source device with an external cooling water circuit, and the minimum temperature of the shell 200 of the present application is also close to the maximum temperature of the shell of the ion source device with an external cooling water circuit. Therefore, the cooling channel 25 of the present application can reduce the temperature of the shell 200, thereby avoiding the temperature of the shell 200 being too high and causing the temperature of the crucible 11 to be higher than its working temperature, thereby making the working temperature of the crucible 11 be in the optimal working temperature range, thereby improving the service life of the crucible 11.

[0059] In addition, from Figure 4 It can be seen that the highest temperature of the housing 200 of the present application is located at the second end 22 of the housing 200, that is, the end close to the arc chamber 12, so that insufficient ionization of gaseous particles in the crucible 11 can be avoided, so as to avoid the deposition of gaseous particles in the arc chamber 12. In addition, the temperature of other positions of the housing 200 of the present application is lower than 100°C, so as to avoid the temperature of the housing 200 being too high and causing the temperature of the crucible 11 to be higher than its working temperature, so as to increase the service life of the crucible 11.

[0060] And from Figure 5 It can be seen that the temperature of the shell of the ion source device with an external cooling water channel at the middle position of the crucible is still higher than 200° C. Therefore, it is inevitable that the temperature of the crucible will be higher than its working temperature, thereby reducing the service life of the crucible.

[0061] like Figure 3 As shown, in this embodiment, the distance between the third path 253 and the end surface of the first end 21 along the extension direction of the housing 200 is the pipeline insertion length L1, and the length of the housing 200 along its extension direction is the housing length L2. The end surface of the first end 21 refers to the end surface of the first end 21 away from the second end 22.

[0062] The ratio of the pipeline insertion length L1 to the shell length L2 ranges from 0.4 to 0.55. Specifically, the ratio of the pipeline insertion length L1 to the shell length L2 ranges from 0.45 to 0.53. More specifically, the ratio of the pipeline insertion length L1 to the shell length L2 is 0.5. Through the above-mentioned configuration, it is possible to avoid the ratio of the pipeline insertion length L1 to the shell length L2 being too large, which may cause the third path 253 to be too close to the arc chamber 12, thereby avoiding the third path 253 from having an excessively high cooling effect on the arc chamber 12, which may cause the temperature of the arc chamber 12 to be unable to meet the reaction requirements, thereby avoiding insufficient ionization of gaseous particles in the arc chamber 12, and avoiding the deposition of unreacted gaseous particles in the arc chamber 12, thereby increasing the service life of the arc chamber 12 and the ion source device 100. In addition, through the above-mentioned arrangement, it is possible to avoid the ratio range of the pipeline extension length L1 to the shell length L2 being too small, resulting in insufficient cooling of the outer shell 200, thereby avoiding the temperature of the outer shell 200 being too high, resulting in the temperature of the crucible 11 being higher than its working temperature, thereby making the working temperature of the crucible 11 within the optimal working temperature range, thereby increasing the service life of the crucible 11.

[0063] As an implementation method, the range of the pipeline insertion length L1 is 80mm to 100mm. Specifically, the range of the pipeline insertion length L1 is 85mm to 95mm. More specifically, the pipeline insertion length L1 is 90mm. Through the above settings, the shell length L2 can be determined by the range of the pipeline insertion length L1, so that the present application can be applied to the shell 200 within the range of the above-mentioned pipeline insertion length L1. It should be noted that the beneficial effects of the above-mentioned range of the pipeline insertion length L1 are equivalent to the beneficial effects of the ratio range of the pipeline insertion length L1 to the shell length L2, so they are not repeated here.

[0064] like Figure 6As shown, as an implementation, the cross-sections of the third path 253, the second path 252, and the first path 251 are all circular holes, and the diameter R1 of the third path 253, the diameter R2 of the second path 252, and the diameter R3 of the first path 251 are all in the range of 5 mm to 6 mm. Specifically, the diameter R1 of the third path 253, the diameter R2 of the second path 252, and the diameter R3 of the first path 251 are all 5.5 mm. Through the above-mentioned arrangement, the third path 253, the second path 252 and the first path 251 of the present application can be adapted to the pipeline extension length L1, thereby avoiding the excessive cooling effect on the arc chamber 12 due to the above-mentioned diameter range being too large, so as to avoid the temperature of the arc chamber 12 being unable to meet the reaction requirements, thereby avoiding insufficient ionization of gaseous particles in the arc chamber 12, and avoiding the deposition of unreacted gaseous particles in the arc chamber 12, thereby improving the service life of the arc chamber 12 and the ion source device 100; at the same time, it also avoids the insufficient cooling of the outer shell 200 due to the above-mentioned diameter range being too small, thereby avoiding affecting the working temperature of the crucible 11, so as to improve the service life of the crucible 11.

[0065] It should be noted that the diameter R1 of the third path 253, the diameter R2 of the second path 252 and the diameter R3 of the first path 251 have the same values, that is, the diameter R1 of the third path 253 is equal to the diameter R2 of the second path 252, and the diameter R2 of the second path 252 is equal to the diameter R3 of the first path 251. It is only necessary to make the values ​​of R1, R2 and R3 within the above range.

[0066] In order to reflect the technical effect brought by the ratio range of the pipeline extension length L1 and the shell length L2, the present application also provides the following Figure 4 , Figure 7 and Figure 8 The three temperature simulation diagrams of the ion source device 100 of the present application are shown in FIG. Figure 4 In the first temperature simulation diagram shown in FIG. 1 , the third path 253, the second path 252 and the first path 251 are all 6 mm in diameter, and the ratio of the pipeline insertion length L1 to the shell length L2 is 0.55 (the pipeline insertion length L1 is 100 mm, and the shell length L2 is 180 mm) is used as an example for simulation; Figure 7 In the second temperature simulation diagram shown in FIG. 1 , the simulation is performed by taking the diameters of the third path 253, the second path 252 and the first path 251 as 6 mm, and the ratio of the pipeline insertion length L1 to the shell length L2 as 0.44 (the pipeline insertion length L1 is 80 mm, and the shell length L2 is 180 mm) as an example; Figure 8In the third temperature simulation diagram shown, the third path 253, the second path 252 and the first path 251 are all 6 mm in diameter, and the ratio of the pipeline insertion length L1 to the shell length L2 is 0.28 (the pipeline insertion length L1 is 50 mm, and the shell length L2 is 180 mm) is used as an example for simulation. That is, the third temperature simulation diagrams are all simulation diagrams formed when the pipeline insertion length L1 is too short.

[0067] It should be noted that the coolant flow rates in the three temperature simulation diagrams are the same.

[0068] In the first temperature simulation diagram, the temperature of the housing 200 of the ion source device 100 is between 61.59° C. and 146.04° C. In the second temperature simulation diagram, the temperature of the housing 200 of the ion source device 100 is between 63.56° C. and 158.94° C. In the third temperature simulation diagram, the temperature of the housing 200 of the ion source device 100 is between 70.04° C. and 183.01° C.

[0069] In addition, from Figure 4 The first temperature simulation diagram shown and Figure 7 As shown in the second temperature simulation diagram, the highest temperature of the housing 200 is located at the second end 22 of the housing 200, that is, the end close to the arc chamber 12, so that insufficient ionization of gaseous particles in the crucible 11 can be avoided, so as to avoid the deposition of gaseous particles in the arc chamber 12. In addition, the temperature of other positions of the housing 200 of the present application is lower than 100°C, so as to avoid the temperature of the housing 200 being too high and causing the temperature of the crucible 11 to be higher than its working temperature, so as to increase the service life of the crucible 11.

[0070] It should be noted that when the ratio of the pipeline extension length L1 to the shell length L2 is 0.55, that is, in the first temperature simulation diagram, the lowest temperature of the second end 22 of the shell 200 is close to 100°C. It can be seen that when the ratio of the pipeline extension length L1 to the shell length L2 is greater than 0.55, the temperature of the second end 22 of the shell 200 will be too low and cause excessive cooling.

[0071] From Figure 8 As shown in the third temperature simulation diagram, the highest temperature of the housing 200 is located at the second end 22 of the housing 200, that is, the end close to the arc chamber 12, so that insufficient ionization of gaseous particles in the crucible 11 can be avoided, so as to avoid the gaseous particles from being deposited in the arc chamber 12. However, the temperature of other positions of the housing 200 is still higher than 120°C, so the temperature of other positions of the housing 200 will be higher than the normal working temperature of the crucible 11, which will cause the temperature of the crucible 11 to be too high, resulting in damage to the crucible 11, thereby reducing the service life of the crucible 11.

[0072] In summary, the ratio range of the pipeline extension length L1 to the shell length L2 set in the present application can avoid the problem of excessive cooling caused by the excessively large ratio range of the pipeline extension length L1 to the shell length L2, and can avoid the problem of insufficient cooling caused by the excessively small ratio range of the pipeline extension length L1 to the shell length L2, so that the temperature of the shell 200 does not affect the normal operation of the crucible 11, that is, the shell 200 is neither overheated to affect the service life of the crucible 11, nor is the shell 200 overcooled to cause insufficient ionization of the gaseous particles transported from the crucible 11 to the arc chamber 12, thereby increasing the service life of the crucible 11 and allowing the gaseous particles to be fully ionized to avoid gaseous particles from being deposited in the arc chamber 12, thereby increasing the service life of the arc chamber 12.

[0073] like Figure 6 As shown, as an implementation method, a preset plane 201 perpendicular to the extension direction of the housing 200 is defined, and the third path 253 is arranged parallel to the preset plane 201. It can be understood that the third path 253 is arranged perpendicular to the first path 251, and the third path 253 is also arranged perpendicular to the second path 252. Through the above arrangement, the pipeline extension length L1 at each position of the third path 253 can be made consistent, so as to facilitate the control of the position of the entire third path 253 in the housing 200 and facilitate the processing of the third path 253.

[0074] Specifically, the housing 200 includes an outer surface 26 located between the first end 21 and the second end 22, and a cross section of the outer surface 26 cut by the preset plane 201 is a housing cross section, and an extension direction of the third path 253 is consistent with an extension direction of an outer contour of the housing cross section. Through the above arrangement, the third path 253 can be adapted to the outer surface 26 of the housing 200, thereby increasing the arrangement length of the third path 253 in the housing 200, so that the third path 253 can cool the housing 200 to the maximum extent, thereby improving the cooling effect of the third path 253 on the housing 200.

[0075] Exemplarily, the outer surface 26 includes a curved surface 261 and a plane 262 connected to each other, and the third path 253 includes a straight segment 2531, a first arc segment 2532 and a second arc segment 2533. The straight segment 2531 is arranged parallel to the plane 262, and the two ends of the first arc segment 2532 are respectively connected to the first path 251 and one end of the straight segment 2531, and the two ends of the second arc segment 2533 are respectively connected to the second path 252 and the other end of the straight segment 2531. Through the above arrangement, the third path 253 can be adapted to the outer surface 26 of the housing 200. Among them, the plane 262 of the outer surface 26 is arranged to avoid the electrode assembly 14, so as to facilitate the arrangement of the electrode assembly 14 and improve the structural compactness of the electrode assembly 14 and the housing 200.

[0076] It should be noted that there is an arc transition between the first arc segment 2532 and the straight segment 2531, and there is an arc transition between the second arc segment 2533 and the straight segment 2531, so that the coolant can flow stably at the transition between the first arc segment 2532 and the straight segment 2531 and at the transition between the second arc segment 2533 and the straight segment 2531, thereby improving the flow smoothness of the coolant.

[0077] In this embodiment, the minimum distance D1 between the straight segment 2531 and the plane 262 ranges from 3.5 mm to 5.5 mm; and / or, the minimum distance D2 between the first arc segment 2532 and the curved surface 261 ranges from 2.5 mm to 3.5 mm; and / or, the minimum distance D3 between the second arc segment 2533 and the curved surface 261 ranges from 2.5 mm to 3.5 mm. Specifically, the minimum distance D1 between the straight segment 2531 and the plane 262 ranges from 4 mm to 5 mm; and / or, the minimum distance D2 between the first arc segment 2532 and the curved surface 261 is 3 mm; and / or, the minimum distance D3 between the second arc segment 2533 and the curved surface 261 is 3 mm. Through the above-mentioned setting, it is possible to avoid the above-mentioned minimum distance being too small, thereby causing the structural strength of the shell 200 to decrease, and it is also possible to avoid the above-mentioned minimum distance being too large, thereby causing the cooling effect of the third path 253 on the shell 200 to decrease. Therefore, the cooling effect of the third path 253 on the shell 200 can be improved while meeting the structural strength requirements of the shell 200.

[0078] It should be noted that the temperature simulation diagrams of the housing 200 in the present application are all simulated based on the example that the third path 253 includes a straight segment 2531 , a first arc segment 2532 and a second arc segment 2533 , and the third path 253 is parallel to the preset plane 201 .

[0079] Exemplarily, when the outer surface 26 is a curved surface 261, that is, the outer surface 26 does not include a plane 262, the third path 253 does not include a straight line segment 2531, that is, the third path 253 is a complete curved segment, so that the curved segment can be adapted to the outer surface 26. It should be noted that the present application does not limit the shape of the third path 253, and it is only necessary that the third path 253 can be adapted to the outer surface 26.

[0080] As an implementation, the minimum distance D4 between the third path 253 and the mounting hole 23 ranges from 2 mm to 3.5 mm. Specifically, the minimum distance D4 between the third path 253 and the mounting hole 23 ranges from 2.5 mm to 3 mm. More specifically, the minimum distance D4 between the third path 253 and the mounting hole 23 is 2.7 mm. Through the above arrangement, it is possible to avoid the minimum distance D4 between the third path 253 and the mounting hole 23 being too small, which may lead to a decrease in the structural strength of the mounting hole 23, and it is also possible to avoid the minimum distance D4 between the third path 253 and the mounting hole 23 being too large, which may lead to insufficient cooling of the housing 200 near the mounting hole 23 by the third path 253, thereby improving the cooling effect of the housing 200 near the mounting hole 23 by the third path 253 while meeting the structural strength requirements of the housing 200 at the mounting hole 23. In addition, the above arrangement may also prevent a small amount of heat from being transferred to the crucible 11 in the mounting hole 23, so that the crucible 11 is within the working temperature, so as to improve the service life of the crucible 11.

[0081] like Fig. 9 As shown, in the present application, in order to reduce the processing difficulty of the third path 253, the housing 200 of the present application includes a first part 27 and a second part 28 distributed along its extension direction, the first part 27 and the second part 28 are fixedly connected, the first end 21 is located on the first part 27, and the second end 22 is located on the second part 28.

[0082] Specifically, the first path 251 and the second path 252 are both located in the first part 27, and the third path 253 includes a first groove 2534 located in the first part 27 and a second groove 2535 located in the second part 28, the opening of the first groove 2534 faces away from the first part 27, and the opening of the second groove 2535 faces away from the second part 28, so that when the first part 27 and the second part 28 are fixedly connected, the first groove 2534 and the second groove 2535 can be spliced ​​to form the third path 253. Among them, the two ends of the first groove 2534 are connected to the first path 251 and the second path 252 respectively. Through the above arrangement, the third path 253 can be processed on the first part 27 and the second part 28 respectively, so that the processing difficulty of the third path 253 can be reduced. In addition, in the above setting, the openings of the first groove body 2534 and the second groove body 2535 need to be adapted to each other, that is, the contours of the openings of the first groove body 2534 and the second groove body 2535 are consistent, so that the first groove body 2534 and the second groove body 2535 can be spliced ​​to form a third path 253.

[0083] It should be noted that after the first trough body 2534 and the second trough body 2535 are processed, the first part 27 and the second part 28 can be fixed by welding. Specifically, the first trough body 2534 and the second trough body 2535 can be sealed by high temperature resistant sealant, sealing ring, etc. to prevent the coolant from leaking from the first trough body 2534 and the second trough body 2535.

[0084] It should be noted that after the first groove body 2534 and the second groove body 2535 are processed, a pipeline can be provided in the third path 253, the first path 251 and the second path 252. The pipeline is used to fill the coolant so that the coolant will not leak from the first groove body 2534 and the second groove body 2535, thereby reducing the sealing performance of the first part 27 and the second part 28. Specifically, the pipeline needs to have good thermal conductivity, so that the coolant in the pipeline can cool the housing 200.

[0085] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A housing (200) of an ion source device (100), characterized in that: The housing (200) comprises a first end (21) and a second end (22) distributed along its extension direction, the housing (200) is provided with a mounting hole (23) penetrating the housing (200) along its extension direction, and a cooling channel (25) with a built-in coolant is provided in the housing (200), and the cooling channel (25) comprises: a first path (251), the first path (251) extending along an extending direction of the housing (200); a second path (252), the second path (252) extending along the extension direction of the housing (200), one end of the second path (252) and one end of the first path (251) both being located at the first end (21) and being used for input and output of cooling liquid respectively; a third path (253), two ends of the third path (253) respectively connected to the other end of the first path (251) and the other end of the second path (252), and the third path (253) is at least partially arranged around the mounting hole (23); The distance between the third path (253) and the end surface of the first end (21) along the extension direction of the shell (200) is the pipeline insertion length, the length of the shell (200) along its extension direction is the shell length, and the ratio of the pipeline insertion length to the shell length is in the range of 0.4 to 0.

55.

2. The housing (200) of the ion source device (100) according to claim 1, characterized in that: The extension length of the pipeline ranges from 80 mm to 100 mm.

3. The housing (200) of the ion source device (100) according to claim 1, characterized in that: The cross-sections of the third path (253), the second path (252) and the first path (251) are all circular holes, and the diameters of the third path (253), the second path (252) and the first path (251) are all in the range of 5 mm to 6 mm.

4. The housing (200) of the ion source device (100) according to claim 1, characterized in that: A preset plane (201) perpendicular to the extension direction of the housing (200) is defined, and the third path (253) is arranged parallel to the preset plane (201).

5. The housing (200) of the ion source device (100) according to claim 4, characterized in that: The housing (200) comprises an outer surface (26) located between the first end (21) and the second end (22); a cross section of the outer surface (26) cut by the preset plane (201) is a shell cross section; and an extension direction of the third path (253) is consistent with an extension direction of an outer contour of the shell cross section.

6. The housing (200) of the ion source device (100) according to claim 5, characterized in that: The outer surface (26) includes a curved surface (261) and a plane (262) connected to each other, and the third path (253) includes a straight segment (2531), a first arc segment (2532) and a second arc segment (2533), the straight segment (2531) is arranged parallel to the plane (262), the two ends of the first arc segment (2532) are respectively connected to the first path (251) and one end of the straight segment (2531), and the two ends of the second arc segment (2533) are respectively connected to the second path (252) and the other end of the straight segment (2531).

7. The housing (200) of the ion source device (100) according to claim 6, characterized in that: The minimum distance between the straight line segment (2531) and the plane (262) ranges from 3.5 mm to 5.5 mm; and / or, the minimum distance between the first arc segment (2532) and the curved surface (261) ranges from 2.5 mm to 3.5 mm; And / or, the minimum distance between the second arc segment (2533) and the curved surface (261) ranges from 2.5 mm to 3.5 mm.

8. The housing (200) of the ion source device (100) according to claim 1, characterized in that: The minimum distance between the third path (253) and the mounting hole (23) ranges from 2 mm to 3.5 mm.

9. The housing (200) of the ion source device (100) according to claim 1, 4 or 5, characterized in that: The housing (200) comprises a first part (27) and a second part (28) distributed along an extension direction thereof, the first part (27) and the second part (28) are fixedly connected, the first end (21) is located on the first part (27), and the second end (22) is located on the second part (28); The first path (251) and the second path (252) are both located in the first part (27); the third path (253) includes a first groove body (2534) located in the first part (27) and a second groove body (2535) located in the second part (28); when the first part (27) and the second part (28) are fixedly connected, the first groove body (2534) and the second groove body (2535) can be spliced ​​to form the third path (253).

10. An ion source device (100), characterized in that: include: A housing (200) of the ion source device (100) according to any one of claims 1 to 9; a crucible (11), wherein the crucible (11) is at least partially located in a mounting hole (23) of the housing (200) and does not contact an inner wall of the mounting hole (23), and the crucible (11) is fixed to a first end (21) of the housing (200); An arc chamber (12), the arc chamber (12) being mounted on the second end (22) of the housing (200) and being in communication with the crucible (11); a special gas pipeline (13), the special gas pipeline (13) being installed on the housing (200) and communicating with the arc chamber (12) so as to transport process gas into the arc chamber (12); An electrode assembly (14) is mounted on the housing (200) and is at least partially located in the arc chamber (12) to ionize gaseous particles.

11. An ion implanter, characterized in that: The ion implanter comprises a housing (200) of the ion source device (100) according to any one of claims 1 to 9.

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