A power hopping filter suitable for use in a 200-700 MHz wide frequency band

Abstract

The application provides a power frequency hopping filter suitable for a 200-700MHz wide frequency band, which comprises a radio frequency input port, a radio frequency output port, an input matching inductor module, an output matching inductor module, a resonant inductor and a PIN diode switch capacitor array; each resonant inductor is connected with the PIN diode switch capacitor array; each PIN diode switch capacitor array is composed of N groups of PIN diode switch capacitor units in parallel connection; each group of PIN diode switch capacitor units is composed of a PIN diode and a resonant capacitor in series connection; the total capacitance of each PIN diode switch capacitor array is limited, so that the working frequency of the frequency hopping filter can reach greater than or equal to 700MHz when all the PIN diodes are cut off, and the working frequency of the frequency hopping filter can reach less than or equal to 200MHz when all the PIN diodes are turned on. The frequency hopping filter can realize that a single device meets the full frequency band coverage of 200-700MHz, and the size of the frequency hopping filter system is reduced and the weight of the frequency hopping filter system is reduced.

Description

Technical Field

[0001] This invention relates to the field of frequency hopping filter technology, and more specifically, to a medium-power frequency hopping filter suitable for a wide bandwidth of 200-700MHz. Background Technology

[0002] Currently, a conventional medium-power (20-50W) frequency hopping filter needs to cover a frequency range of 200-700MHz, which requires a combination of two frequency hopping filters (e.g., 200-400 MHz and 400-700 MHz) and two RF switches. Figure 1 As shown. The biggest bottleneck of this implementation method is its large size and heavy weight, making it difficult to meet miniaturization requirements. If a frequency coverage of 200~700MHz can be achieved using a single frequency hopping filter, then one frequency hopping filter and RF switch can be reduced, such as... Figure 2 As shown, the size of the frequency hopping filter system can be significantly reduced, thus effectively solving the current problems of large size and heavy weight.

[0003] Currently, frequency hopping filters utilize a large number of PIN diodes: a second-order, ten-group PIN diode switched-capacitor array requires twenty PIN diodes; a third-order, twelve-group PIN diode switched-capacitor array requires thirty-six PIN diodes; and so on. PIN diodes are crucial components in frequency hopping filters; the filter achieves frequency band coverage by utilizing the conduction and cutoff characteristics of PIN diodes, combined with capacitors to form a switched-capacitor array. The equivalent model of a PIN diode when it is conducting is shown in Figure 3(a), and the equivalent model when it is cut off is shown in Figure 3(b).

[0004] The main reason why a frequency coverage of 200~700MHz cannot be achieved at present is the characteristic parameters of PIN diodes. The characteristic parameters of PIN diodes used in 20-50W medium power frequency hopping filters are shown in Table 1.

[0005] Table 1. Characteristic parameters of commonly used PIN diodes on the market.

[0006]

[0007] In achieving wideband coverage, the total capacitance C and series resistance Rs of the switched capacitor array composed of PIN diodes and resonant capacitors are crucial. However, the commonly used switched capacitor array composed of PIN diodes and resonant capacitors cannot achieve a frequency coverage of 200~700MHz; therefore, it is necessary to improve the frequency hopping filter and PIN diodes so that a single frequency hopping filter can achieve a wideband coverage of 200~700MHz. Summary of the Invention

[0008] To overcome the shortcomings and deficiencies of the prior art, the present invention aims to provide a medium-power frequency hopping filter suitable for a wide frequency band of 200-700MHz; this frequency hopping filter can achieve full frequency band coverage of 200-700MHz with a single device, reducing the size and weight of the frequency hopping filter system.

[0009] To achieve the above objectives, the present invention is implemented through the following technical solution: a medium-power frequency hopping filter suitable for a wide bandwidth of 200-700MHz, comprising an RF input port, an RF output port, an input matching inductor module, an output matching inductor module, two or more resonant inductors and a PIN diode switched capacitor array;

[0010] The RF input port and RF output port are connected through an input matching inductor module, sequentially critically coupled resonant inductors, and an output matching inductor module; each resonant inductor is connected one-to-one with a PIN diode switched capacitor array.

[0011] Each PIN diode switched capacitor array consists of N groups of PIN diode switched capacitor units connected in parallel; each group of PIN diode switched capacitor units consists of a PIN diode and a resonant capacitor connected in series.

[0012] When all PIN diodes are turned off, the total capacitance C of each PIN diode switched capacitor array is equal to the sum of the PIN diode junction capacitance Ct of all PIN diode switched capacitor units in the PIN diode switched capacitor array and the resonant capacitance. C i The sum of series, i=1,2，…，12 The total capacitance C is limited to: Where L is the resonant inductance value, f max =700MHz, so that the frequency hopping filter can operate at a frequency of ≥700MHz when all PIN diodes are turned off;

[0013] When all PIN diodes are turned on, the total capacitance C' of each PIN diode switched capacitor array is equal to the total resonant capacitance of the PIN diode switched capacitor array. C i The sum; the total capacitance C' is limited to: ,in, f min =200MHz, so that the operating frequency of the frequency hopping filter can reach ≤200MHz when all PIN diodes are turned on.

[0014] The frequency hopping filter of this invention can achieve full frequency band coverage of 200-700MHz with a single device, reducing the size and weight of the frequency hopping filter system.

[0015] Preferably, when all PIN diodes are turned off, the total capacitance C of each PIN diode switched capacitor array is:

[0016] ;

[0017] When all PIN diodes are turned on, the total capacitance C' of each PIN diode switched capacitor array is:

[0018] .

[0019] Preferably, in the PIN diode switched capacitor array, K PIN diodes are integrated into a diode integrated chip using a semiconductor integration method, wherein 2≤K≤N; the diode integrated chip includes a housing and K groups of diode assemblies; the housing is provided with a cavity; the K groups of diode assemblies are arranged side by side in the cavity; each group of diode assemblies includes: a bare diode chip, a molybdenum copper sheet, and a gold wire; several solder islands are provided on the cavity wall; each bare diode chip and molybdenum copper sheet are respectively disposed on the solder island; the negative electrode of the bare diode chip is attached to the solder island so that the solder island where the bare diode chip is located forms a negative electrode solder island, and the positive electrode of the bare diode chip is bonded to the molybdenum copper sheet through the gold wire so that the solder island where the molybdenum copper sheet is located forms a positive electrode solder island; an electrical gap is provided between adjacent solder islands.

[0020] Preferably, the bare diode chip refers to a platform-shaped high-voltage silicon PIN diode bare chip with a circular positive electrode and a square negative electrode; the high-voltage silicon PIN diode bare chip adopts a high-voltage silicon PIN diode bare chip with a junction capacitance Cj of 0.7pF at 100V, a maximum series resistance Rs of 0.3Ω, and a reverse voltage VR of 500V.

[0021] Preferably, in each PIN diode switched capacitor array, the number N of PIN diode switched capacitor units is twelve; the resonant capacitors C1 to C12 of the twelve groups of PIN diode switched capacitor units have the following capacitance values: 0.4pF, 0.7pF, 1pF, 2pF, 3.9pF, 7.5pF, 10pF, 11pF, 12pF, 12pF, 15pF, and 15pF, respectively; and the resonant inductance value L is 7nH.

[0022] Preferably, in each diode integrated chip, the number of diode components K is six.

[0023] Preferably, in the diode integrated chip, the bare diode chip and the solder island, as well as the molybdenum copper sheet and the solder island, are bonded together using a eutectic process; the two ends of the gold wire are connected to the positive electrode of the bare diode chip and the molybdenum copper sheet respectively by bonding.

[0024] Preferably, the positive and negative electrode solder islands are arranged in rows; the positive and negative electrode solder islands are positioned one-to-one opposite each other. This arrangement allows the diode groups to be arranged side by side, improving the consistency of performance among the diode groups.

[0025] Preferably, the electrical clearance between adjacent positive electrode solder islands and the electrical clearance between adjacent negative electrode solder islands are the same, both being N; the electrical clearance between positive and negative electrode solder islands is M; M ≥ 0.4 mm; N ≥ 0.4 mm. This electrical clearance configuration satisfies the required electrical and insulation performance.

[0026] Preferably, the cavity of the tube shell is filled with an insulating medium.

[0027] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0028] 1. The frequency hopping filter of this invention, when all PIN diodes are turned off, the total capacitance of the PIN diode switched capacitor array can meet the requirement that the frequency hopping filter can operate at a frequency of ≥700MHz; when all PIN diodes are turned on, the total capacitance of the PIN diode switched capacitor array can meet the requirement that the frequency hopping filter can operate at a frequency of ≤200MHz; thus, a single device can meet the full frequency band coverage of 200-700MHz, reducing the size and weight of the frequency hopping filter system; suitable for medium power frequency hopping filter applications of 20-50W;

[0029] 2. The frequency hopping filter of the present invention integrates multiple PIN diodes into one unit using a diode integrated chip, which can significantly optimize the space occupied by PIN diodes in the circuit, further reducing the size and weight. Attached Figure Description

[0030] Figure 1 This is a block diagram of an existing conventional frequency hopping filter system;

[0031] Figure 2 This is a block diagram illustrating the principle of achieving a frequency coverage of 200~700MHz using a single frequency hopping filter;

[0032] Figure 3(a) and Figure 3(b) are the equivalent models of the PIN diode when it is turned on and when it is turned off, respectively.

[0033] Figure 4 This is the circuit schematic diagram of the present invention applicable to a 200-700MHz wideband medium power frequency hopping filter;

[0034] Figure 5 This is one of the schematic diagrams of the internal structure of the diode integrated chip, which is applicable to the 200-700MHz wideband medium power frequency hopping filter of this invention.

[0035] Figure 6 This is the second schematic diagram of the internal structure of the diode integrated chip, which is applicable to the 200-700MHz wideband medium power frequency hopping filter of this invention.

[0036] Figure 7 This is one of the structural schematic diagrams of a diode integrated chip applicable to a 200-700MHz wideband medium-power frequency hopping filter according to the present invention;

[0037] Figure 8 This is the second schematic diagram of the diode integrated chip structure applicable to the 200-700MHz wideband medium power frequency hopping filter of the present invention;

[0038] Among them, 1 is the tube shell, 2 is the molybdenum copper sheet, 3 is the bare diode chip, 4 is the gold wire, 5 is the tube cap, and 6 is the solder island. Detailed Implementation

[0039] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0040] Example

[0041] This embodiment describes a medium-power frequency hopping filter suitable for a wide bandwidth of 200-700MHz. The circuit principle is as follows: Figure 4 As shown, it includes an RF input port, an RF output port, an input matching inductor module, an output matching inductor module, two or more resonant inductors, and a PIN diode switched capacitor array.

[0042] The RF input port and RF output port are connected via an input matching inductor module, sequentially critically coupled resonant inductors, and an output matching inductor module; each resonant inductor is connected one-to-one with a PIN diode switched capacitor array. Each PIN diode switched capacitor array consists of N groups of PIN diode switched capacitor units connected in parallel; each group of PIN diode switched capacitor units consists of a PIN diode and a resonant capacitor connected in series.

[0043] In achieving wide-band coverage, the values ​​of the total capacitance C and series resistance Rs of the PIN diode switched capacitor array are crucial.

[0044] According to the frequency formula Where L is the resonant inductance value and C is the total capacitance of the PIN diode switched capacitor array.

[0045] When all PIN diodes are turned off, the total capacitance C of each PIN diode switched capacitor array is equal to the sum of the PIN diode junction capacitance Ct of all PIN diode switched capacitor units in the PIN diode switched capacitor array and the resonant capacitance. C i The sum of series, i=1,2，…，12 :

[0046] ;

[0047] The total capacitance C is limited to: ,in, f max =700MHz, so that the frequency hopping filter can operate at a frequency of ≥700MHz when all PIN diodes are turned off;

[0048] When all PIN diodes are turned on, the total capacitance C' of each PIN diode switched capacitor array is equal to the total resonant capacitance of the PIN diode switched capacitor array. C i sum:

[0049] ;

[0050] The total capacitance C' is limited to: ,in, f min =200MHz, so that the operating frequency of the frequency hopping filter can reach ≤200MHz when all PIN diodes are turned on.

[0051] In this embodiment, the resonant inductance value L is a fixed value of 7nh, which, together with the diode-switched capacitor unit, forms a parallel resonant circuit and determines the frequency. To achieve a frequency coverage of 200~700MHz, the value of C must be ≤7.38pf for the frequency to be ≥700MHz; the value of C must be ≥90.47pf for the frequency to be ≤200MHz.

[0052] The number N of PIN diode switched capacitor units is twelve. If the resonant capacitors C1 to C12 of the twelve PIN diode switched capacitor units have capacitance values ​​of 0.4pF, 0.7pF, 1pF, 2pF, 3.9pF, 7.5pF, 10pF, 11pF, 12pF, 12pF, 15pF, and 15pF respectively; if the existing PIN diode model MA4P506-1072T is selected, according to the parameters in Table 1, the junction capacitance of MA4P506-1072T is 1.0pF, then the value of C is 9.09pF, which is significantly greater than 7.38pF. Therefore, the operating frequency of the frequency hopping filter cannot reach 700MHz.

[0053] If PIN diodes of model MA4P504-1072T or MA4P505-1072T are selected, the value of C can meet the requirement of ≤7.38pF. However, the series resistance Rs of these two PIN diodes is ≥0.45Ω, which will cause excessive passband loss when conducting, failing to meet the usage requirements. The effect of different resistance values ​​on loss was determined by using resistors with different values ​​(e.g., 0.3Ω, 0.35Ω, 0.4Ω, 0.45Ω) to represent the equivalent diode series resistance. It was found that when Rs≤0.35Ω, the passband loss is small; when 0.35Ω<Rs≤0.4Ω, the passband loss is relatively large, barely acceptable; when Rs≥0.45Ω, the loss is too large and cannot meet the usage requirements.

[0054] Since the power level of a medium-power frequency hopping filter needs to be above 20W, the minimum reverse breakdown voltage of the PIN diode must be ≥500V. Otherwise, the PIN diode is easily damaged under high transmit power, causing the product to malfunction. Meeting the minimum reverse breakdown voltage requirement of ≥500V will, to some extent, limit the maximum junction capacitance and maximum series resistance of the PIN diode. The maximum junction capacitance and maximum series resistance are inversely related. With the capacitance values ​​of the resonant capacitors C1 to C12 and the resonant inductance value L, to meet the requirements of a wide-band frequency hopping filter of 200-700MHz, the maximum junction capacitance of the PIN diode needs to be ≤0.78pF. However, current PIN diodes cannot simultaneously meet the conditions of minimum reverse breakdown voltage ≥500V, maximum junction capacitance ≤0.78pF, and maximum series resistance ≤0.4Ω.

[0055] In this embodiment, in the PIN diode switched capacitor array, K PIN diodes are integrated into a diode integrated chip using a semiconductor integration method. The design employs micro-assembly technology to achieve low series resistance Rs and small junction capacitance Ct, enabling a frequency coverage of 200~700MHz to be achieved with a single frequency hopping filter, while significantly reducing size and weight.

[0056] like Figures 5 to 8 As shown, the diode integrated chip includes a housing 11 and K groups of diode assemblies, where 2 ≤ K ≤ N; the housing 1 is provided with a cavity; the K groups of diode assemblies are arranged side by side in the cavity. In this embodiment, the number K of diode assemblies in each diode integrated chip is six. In practical applications, the number K of diode assemblies in each diode integrated chip can also be 2, 3, 4, 5, 7, ...

[0057] Each diode assembly includes: a bare diode chip 3, a molybdenum copper sheet 2, and a gold wire 4; several solder islands 6 are provided on the cavity wall; each bare diode chip 3 and molybdenum copper sheet 2 are respectively disposed on the solder island 6; the negative electrode of the bare diode chip 3 is attached to the solder island 6 so that the solder island 6 where the bare diode chip 3 is located forms a negative electrode solder island 6, and the positive electrode of the bare diode chip 3 is bonded to the molybdenum copper sheet 2 through the gold wire 4 so that the solder island 6 where the molybdenum copper sheet 2 is located forms a positive electrode solder island 6.

[0058] In the diode integrated chip, the bare diode chip 3 and the solder island 6, as well as the molybdenum copper sheet 2 and the solder island 6, are bonded together using a eutectic process; the two ends of the gold wire 4 are connected to the positive electrode of the bare diode chip 3 and the molybdenum copper sheet 2 respectively by bonding.

[0059] Positive electrode solder islands 6 and negative electrode solder islands 6 are arranged in rows; positive electrode solder islands 6 and negative electrode solder islands 6 are positioned opposite each other in a one-to-one manner. The electrical clearance between adjacent positive electrode solder islands 6 and the electrical clearance between adjacent negative electrode solder islands 6 are the same, both being N; the electrical clearance between positive electrode solder islands 6 and negative electrode solder islands 6 is M; M≥0.4mm; N≥0.4mm.

[0060] The shell 1 preferably includes a shell body and a cap 5; the cavity is opened in the shell body, and the cap 5 covers the opening of the cavity.

[0061] The cavity of the tube shell is preferably filled with an insulating medium to improve the insulation performance of the cavity.

[0062] The bare diode chip 3 refers to the bare high voltage silicon PIN diode chip 3, which can be an existing bare chip. The bare high voltage silicon PIN diode chip 3 adopts a bare high voltage silicon PIN diode chip 3 with a junction capacitance Cj of 0.7pF at 100V, a maximum series resistance Rs of 0.3Ω, and a reverse voltage VR of 500V. Its electrical parameters are shown in Table 2.

[0063] Table 2. Electrical parameters of bare high-voltage silicon PIN diodes at room temperature

[0064]

[0065] The bare diode chip 3 is generally platform-shaped; the positive electrode is circular with a diameter of 400um; the negative electrode is square with dimensions of 700um*700um; and the height is 300um.

[0066] The diode integrated chip of this invention can significantly optimize the space occupied by PIN diodes in a circuit. A comparison is made between the space occupied by the diode integrated chip integrating six PIN diodes in this embodiment and the space occupied by six independent PIN diodes (model MA4P506-1072T) arranged side-by-side:

[0067] In this embodiment, the following dimensions are used as an example: the dimensions of the molybdenum copper sheet and the bare diode chip are 0.7mm × 0.7mm, the electrical clearances N and M are 0.8mm and 1.2mm respectively, the distance L between the outermost solder island and the edge is 0.5mm, and the solder island size is 0.7mm × 0.9mm; the dimensions of the diode integrated chip are: length = 0.7 × 6 + 0.8 × 5 + 0.5 × 2 = 9.2mm, width = 0.9 × 2 + 1.2 = 3mm, and height = 2.5mm.

[0068] The space occupied by six MA4P506-1072T PIN diodes arranged side-by-side is calculated as follows, with an electrical clearance of 0.8 mm: length = (2.4 × 6 + 0.8 × 5) = 18.4 mm, width 3.4 mm, and height 2.4 mm. Compared to this, the space occupied by the diode integrated chip in this embodiment is reduced by approximately 50%, significantly optimizing the space occupied by the PIN diodes.

[0069] The junction capacitance of a PIN diode refers to the capacitance effect of the diode under reverse bias. The size of the junction capacitance depends on factors such as the junction area, doping concentration, and applied voltage. This invention employs a platform-like structure for the bare diode chip, eliminating the curved portion of the planar junction and improving the surface breakdown voltage; reducing edge capacitance and inductance; and effectively reducing the junction area to lower the junction capacitance of the PIN diode.

[0070] Leveraging the inherent advantages of miniaturization in micro-assembly, the molybdenum-copper sheet 2 serves as the encapsulation electrode, bonded to the positive terminal of the bare diode chip using gold wires. These gold wires are micrometer-scale, short, and thin. Unlike conventional diodes, the bare diode chip does not require a molybdenum-copper cylinder to support the connection to the encapsulation electrode, resulting in very low distributed capacitance within the package and the casing. Table 3 shows a comparison of the performance indicators of the diode integrated chip of this invention with those of a single existing PIN diode, model MA4P506-1072T.

[0071] Table 3. Performance Comparison Parameters of the Diode Integrated Chip of the Present Invention and MA4P506-1072T

[0072]

[0073] As shown in Table 3, the diode integrated chip of this invention can effectively reduce the influence of parameters such as distributed capacitance, making the difference between the junction capacitance Ct of the PIN diode and the junction capacitance Cj of the bare diode chip very small, effectively achieving the requirements of low series resistance Rs and small junction capacitance Ct of the PIN diode. When all PIN diodes are off, the sum of the series capacitances of C1~C12 is 7.32pF < 7.38pF, which meets the requirement of the frequency hopping filter to operate at a frequency of 700MHz. When all PIN diodes are on, the capacitance value is 90.5pF, and the frequency hopping filter operates at a frequency of 199.9MHz, which meets the requirement of 200MHz. Furthermore, the series resistance Rs of the diode integrated chip is 0.33Ω, Rs≤0.35Ω, and the passband loss is low, meeting the application requirements.

[0074] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. A power hopping filter suitable for use in a 200-700 MHz wide frequency band, characterized by: The application relates to a radio frequency (RF) switch capacitor array, which comprises an RF input port, an RF output port, an input matching inductor module, an output matching inductor module, two or more resonant inductors and PIN diode switch capacitor arrays. The RF input port and the RF output port are connected through the input matching inductor module, the resonant inductors which are sequentially critically coupled, and the output matching inductor module; each resonant inductor is connected with a PIN diode switch capacitor array one by one. Each PIN diode switch capacitor array is composed of N groups of PIN diode switch capacitor units in parallel; each group of PIN diode switch capacitor units is composed of a PIN diode and a resonant capacitor in series. When all the PIN diodes are all turned off, the total capacitance C of each PIN diode switched-capacitor array is the PIN diode junction capacitance Ct of all the PIN diode switched-capacitor units of the PIN diode switched-capacitor array plus the resonance capacitance C i the sum of the series, i =1,2，…，12 ; The total capacitance C is defined as: where L is the resonance inductance value, =700MHz, so that the frequency of the frequency hopping filter can reach ≥700MHz when all PIN diodes are completely turned off. The total capacitance C' of each PIN diode switched-capacitor array when all PIN diodes are fully on is the sum of all resonant capacitances of the PIN diode switched-capacitor array C i The total capacitance C' is defined as: wherein, = 200 MHz, so that the operating frequency of the frequency hopping filter can reach ≤ 200 MHz when all PIN diodes are fully on. In the PIN diode switch capacitor array, K PIN diodes are integrated in a diode integrated chip in a semiconductor integrated manner, wherein 2<=K<=N; the diode integrated chip comprises a tube shell and K groups of diode components; the tube shell is provided with a cavity; the K groups of diode components are arranged side by side in the cavity; each group of diode components comprises a diode bare chip, a molybdenum copper sheet and a gold wire; a plurality of welding islands are arranged on the cavity wall; each diode bare chip and the molybdenum copper sheet are arranged on the welding islands respectively; the negative electrode of the diode bare chip is attached to the welding island to form a negative electrode welding island; the positive electrode of the diode bare chip is bonded to the molybdenum copper sheet through the gold wire to form a positive electrode welding island; electrical gaps are arranged between adjacent welding islands.

2. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to claim 1, characterized in that: When all the PIN diodes are cut off, the total capacitance C of each PIN diode switch capacitor array is: ； When all the PIN diodes are turned on, the total capacitance C' of each PIN diode switch capacitor array is: 。 3. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to claim 1, characterized in that: The diode bare chip is a platform-shaped high-voltage silicon PIN diode bare chip with a circular positive electrode and a square negative electrode; the high-voltage silicon PIN diode bare chip adopts a high-voltage silicon PIN diode bare chip with a junction capacitance Cj of 0.7pF under a 100V voltage state, a maximum series resistance Rs of 0.3Ω and a reverse voltage VR of 500V.

4. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to claim 3, characterized in that: In each PIN diode switch capacitor array, the number N of PIN diode switch capacitor units is twelve; the capacitance values of the resonant capacitors C1-C12 of the twelve groups of PIN diode switch capacitor units are 0.4pf, 0.7pf, 1pf, 2pf, 3.9pf, 7.5pf, 10pf, 11pf, 12pf, 12pf, 15pf and 15pf respectively; and the resonant inductance L is 7nH.

5. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to claim 4, characterized in that: In each diode integrated chip, the number K of diode components is six.

6. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to any one of claims 1 to 5, characterized in that: In the diode integrated chip, the diode bare chip and the welding island, and the molybdenum copper sheet and the welding island are combined together through a eutectic process; the two ends of the gold wire are connected with the positive electrode of the diode bare chip and the molybdenum copper sheet through a bonding method respectively.

7. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to any one of claims 1-5, characterized in that: The positive electrode welding islands and the negative electrode welding islands are arranged in rows respectively; the positive electrode welding islands and the negative electrode welding islands are located opposite to each other one by one.

8. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to claim 7, characterized in that: The electrical gaps between adjacent positive electrode welding islands and the electrical gaps between adjacent negative electrode welding islands are the same and are N; the electrical gap between the positive electrode welding island and the negative electrode welding island is M; M>=0.4mm; N>=0.4mm.

9. The power hopping filter suitable for use in a wide frequency band of 200-700MHz according to any one of claims 1-5, characterized in that: The cavity of the tube shell is filled with an insulating medium.

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