Display panel and preparation method thereof

Abstract

The invention relates to the technical field of optical display, in particular to a display panel and a preparation method of the display panel. The width of the second metal layer is set to be larger than that of the first metal layer, so that part of the second metal layer can extend to the pixel definition layer along the peripheral side of the first metal layer in the thickness direction of the substrate. Therefore, the surface, close to the second metal layer, of the first metal layer and the peripheral side surface are covered by the second metal layer. Compared with the prior art, the second metal layer does not react with the first metal layer when being etched, so that the side wall of the second metal layer is smoother, and the cathode is more stable after being directly overlapped with the second metal layer.

Description

Technical Field

[0001] The present invention relates to the technical field of optical display, and in particular to a display panel and a method for preparing the display panel. Background Art

[0002] In the preparation process of OLED (Organic Light-Emitting Diode, OLED) organic light-emitting devices, maskless deposition and photolithography (photo lithography) patterned pixel method can greatly increase the effective light-emitting area (aperture ratio) of active matrix OLED, which is conducive to greatly increasing pixel density. In order to achieve independent packaging of pixels, an isolation structure is introduced, that is, in the preparation of the device, a metal template is not used, but an insulating partition is made on the substrate before evaporating the organic film and the metal cathode, and finally the different pixels of the device are separated.

[0003] In the existing display panel, the isolation structure includes two metal layers arranged in sequence from close to the pixel definition layer to far away from the pixel definition layer. Since the two metal layers are made of different materials, when the isolation structure is etched on the pixel definition layer, the metal layer on the side of the isolation structure close to the pixel definition layer will shrink relative to the metal layer far away from the pixel definition layer, which may reduce the overlapping stability of the isolation structure and the cathode. Summary of the invention

[0004] The purpose of the present application is to provide a display panel and a method for manufacturing the display panel.

[0005] The present application provides a display panel, comprising: a substrate; a pixel definition layer, the pixel definition layer being arranged on the substrate; an isolation structure, the isolation structure comprising a first metal layer, a second metal layer and an eaves layer which are stacked, wherein along the length direction of the substrate, the width of the first metal layer, the width of the second metal layer and the width of the eaves layer are smaller than the width of the pixel definition layer, the width of the eaves layer is larger than the width of the second metal layer so that the eaves layer extends outside the second metal layer, and the width of the second metal layer is larger than the width of the first metal layer; along the thickness direction of the substrate, part of the second metal layer extends along the peripheral side of the first metal layer to the pixel definition layer.

[0006] In an exemplary embodiment of the present application, the width of the second metal layer gradually decreases from away from the pixel definition layer to close to the pixel definition layer, and the width of the first metal layer is the same.

[0007] In an exemplary embodiment of the present application, in a plane of the first metal layer away from the pixel definition layer along the length direction of the substrate, the first metal layer has a first width, the second metal layer has a second width, the second width is smaller than the first width, and the width difference between the second width and the first width is between 0.2um and 2um.

[0008] In an exemplary embodiment of the present application, along the thickness direction of the substrate, the thickness of the first metal layer is between 0.05 um and 0.15 um.

[0009] In an exemplary embodiment of the present application, the second metal layer has a main body, a protruding portion and an extending portion, the extending portion is connected to the main body and extends toward the pixel definition layer, and the protruding portion is connected to the main body and protrudes in a direction away from the pixel definition layer; in the height direction of the substrate, the extending portion, the protruding portion and the first metal layer have the same height.

[0010] In an exemplary embodiment of the present application, a step surface is provided between the protruding portion and the main body portion, and the eaves layer is provided on the protruding portion and the step surface.

[0011] In an exemplary embodiment of the present application, the first metal layer, the second metal layer and the eaves layer have the same center line.

[0012] The present application also provides a method for preparing a display panel, comprising: providing a substrate; forming a pixel definition layer on the substrate; forming a first metal material layer on a side of the pixel definition layer away from the substrate, the first metal material layer extending from the substrate to the pixel definition layer, and processing the first metal material layer to obtain a first metal layer; forming a second metal material layer and an eaves material layer on the first metal layer in sequence, the second metal material layer and the eaves material layer extending from the substrate to the first metal layer, and processing the second metal material layer and the eaves material layer in sequence to obtain an eaves layer and a second metal layer; wherein, along the length direction of the substrate, the width of the first metal layer, the width of the second metal layer and the width of the eaves layer are smaller than the width of the pixel definition layer, the width of the eaves layer is larger than the width of the second metal layer so that the eaves layer extends outside the second metal layer, and the width of the second metal layer is larger than the width of the first metal layer; along the thickness direction of the substrate, part of the second metal layer extends along the peripheral side of the first metal layer to the pixel definition layer.

[0013] In an exemplary embodiment of the present application, the step of processing the second metal material layer and the eaves material layer to obtain the eaves layer and the second metal layer in sequence includes: forming a mask layer on the eaves layer; dry-etching the eaves material layer through the mask layer to obtain the eaves layer; and wet-etching the second metal material layer through the mask layer to obtain the second metal layer.

[0014] In an exemplary embodiment of the present application, the step of processing the second metal material layer and the eaves material layer to obtain the eaves layer and the second metal layer in sequence includes: forming a mask layer on the eaves layer; dry-etching the eaves material layer through the mask layer to obtain the eaves layer; after dry-etching a portion of the second metal material layer through the mask layer, the thickness of the dry etching is between 2 / 3 and 3 / 4 of the thickness of the second metal material layer in the thickness direction of the substrate; wet-etching a portion of the second metal material layer through the mask layer to obtain the second metal layer, and the thickness of the wet etching is between 1 / 4 and 1 / 3 of the thickness of the second metal material layer in the thickness direction of the substrate.

[0015] A display panel and a method for preparing a display panel according to the present application have the following beneficial effects: by setting the width of the eaves layer to be greater than the second metal layer, so that the eaves layer extends outside the second metal layer, it is possible to have different light-emitting layer evaporation angles and cathode evaporation angles when depositing the light-emitting layer and cathode of the sub-pixel. By setting the width of the second metal layer to be greater than the first metal layer, part of the second metal can extend along the peripheral side of the first metal layer to the pixel definition layer along the thickness direction of the substrate, so that the surface of the first metal layer close to the second metal layer and the peripheral side surface are covered by the second metal layer. Compared with the prior art, in the present application, the second metal layer will not react with the first metal layer when it is etched, so that the side wall of the second metal layer will be smoother, and the cathode will be more stable after being directly overlapped with the second metal layer.

[0016] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0017] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 is a schematic structural diagram of a display panel in an embodiment of the present invention;

[0020] Figure 2 is a schematic flow chart of a method for preparing a display panel according to an embodiment of the present invention;

[0021] Figure 3 is a schematic structural diagram of forming a first metal material layer in an embodiment of the present invention;

[0022] Figure 4 is a schematic diagram of a structure for forming a first metal layer in an embodiment of the present invention;

[0023] Figure 5 is a schematic diagram of a structure for forming a second metal material layer and an eaves material layer in an embodiment of the present invention;

[0024] Figure 6 is a schematic structural diagram of forming a mask layer in an embodiment of the present invention;

[0025] Figure 7 is a schematic diagram of a structure for forming an eaves layer in an embodiment of the present invention;

[0026] Figure 8 is a schematic diagram of a structure for forming a second metal layer in an embodiment of the present invention;

[0027] Fig. 9 is a schematic structural diagram of removing the mask layer in an embodiment of the present invention;

[0028] Fig.10 is a schematic diagram of a process of forming a second metal material layer and an eaves material layer in an embodiment of the present invention;

[0029] Fig.11 It is a schematic diagram of the process of forming the second metal material layer and the eaves material layer in another embodiment of the present invention.

[0030] Description of reference numerals:

[0031] 10. Substrate; 11. Driving circuit layer; 20. Pixel definition layer; 31. First metal material layer; 32. First metal layer; 41. Eaves material layer; 42. Eaves layer; 51. Second metal material layer; 52. Second metal layer; 521. Main body; 522. Protruding portion; 5221. Step surface; 523. Extension portion; 60. Mask layer; 70. Anode. DETAILED DESCRIPTION

[0032] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0033] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0034] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0035] It should be noted that the "multiple" mentioned in this article refers to two or more. "And / or" describes the association relationship of the associated objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the associated objects before and after are in an "or" relationship.

[0036] In the preparation process of OLED (Organic Light-Emitting Diode, OLED) organic light-emitting devices, maskless deposition and photolithography (photo lithography) patterned pixel method can greatly increase the effective light-emitting area (aperture ratio) of active matrix OLED, which is conducive to greatly increasing pixel density. In order to achieve independent packaging of pixels, an isolation structure is introduced, that is, in the preparation of the device, a metal template is not used, but an insulating partition is made on the substrate before evaporating the organic film and the metal cathode, and finally the different pixels of the device are separated.

[0037] In the existing display panel, the isolation structure includes two metal layers arranged in sequence from close to the pixel definition layer 20 to away from the pixel definition layer 20. Since the two metal layers are made of different materials, when the isolation structure is etched on the pixel definition layer 20, the metal layer on the side of the isolation structure close to the pixel definition layer 20 will shrink relative to the metal layer away from the pixel definition layer 20, which may reduce the overlapping stability of the isolation structure and the cathode.

[0038] In order to solve the above technical problems, refer to Figure 1 As shown, the present application provides a display panel, comprising a substrate, a pixel definition layer and an isolation structure, wherein the pixel definition layer is arranged on the substrate; the isolation structure comprises a first metal layer, a second metal layer and an eaves layer arranged in a stacked manner, wherein along the length direction of the substrate, the width of the first metal layer, the width of the second metal layer and the width of the eaves layer are smaller than the width of the pixel definition layer, the width of the eaves layer is larger than the width of the second metal layer so that the eaves layer extends outside the second metal layer, and the width of the second metal layer is larger than the width of the first metal layer; along the thickness direction of the substrate, part of the second metal layer extends to the pixel definition layer along the peripheral side of the first metal layer. Thus, by setting the width of the eaves layer larger than the second metal layer so that the eaves layer extends outside the second metal layer, different light-emitting layer evaporation angles and cathode evaporation angles can be achieved when depositing the light-emitting layer and cathode of the sub-pixel. By setting the width of the second metal layer larger than the first metal layer so that along the thickness direction of the substrate, part of the second metal can extend to the pixel definition layer along the peripheral side of the first metal layer, so that the surface of the first metal layer close to the second metal layer and the peripheral side surface are covered by the second metal layer. Compared with the prior art, in the present application, the second metal layer will not react with the first metal layer when being etched, so that the side wall of the second metal layer will be smoother, and the cathode will be more stable after being directly overlapped with the second metal layer.

[0039] In some embodiments, the isolation structure protrudes and is arranged around the pixel accommodating area to separate sub-pixels of different colors to avoid pixel crosstalk. The combination of the first metal layer 32 and the second metal layer 52 is a conductive structure of the isolation structure, and the eaves layer 42 is an insulating structure of the isolation structure. The conductive structure can be used as a common cathode to conduct with the cathodes of different sub-pixels. The insulating structure is arranged on the surface of the conductive structure on one side away from the pixel definition layer 20 to separate sub-pixels of different colors.

[0040] In some embodiments, the first metal layer 32 is preferably made of molybdenum, the second metal layer 52 is preferably made of aluminum, and the pixel definition layer 20 is preferably made of organic material.

[0041] In some embodiments, reference Figure 1 As shown, from the direction away from the pixel definition layer 20 to the direction close to the pixel definition layer 20, the width of the second metal layer 52 gradually decreases, and the width of the first metal layer 32 is the same. As a result, the width of the second metal layer 52 gradually decreases to form a structure similar to a trapezoid, and its two side surfaces are inclined surfaces, which can further increase the area of ​​the cathode overlap. The first metal layer 32 is surrounded by the second metal layer 52, and the first metal layer 32 can have a better adhesion effect with the pixel definition layer 20, and can also reduce the risk of chemical reaction between water vapor and aluminum in the pixel definition layer 20. Therefore, the width of the first metal layer 32 is configured to be the same to form a rectangular structure, which can increase the isolation area and also have a larger adhesion area. Among them, the trapezoidal structure and the rectangular structure are both cross-sectional structures.

[0042] In some embodiments, as shown in the figure, in a plane parallel to the first metal layer 32 and away from the pixel definition layer 20, and along the length direction of the substrate 10, the first metal layer 32 has a first width, and the second metal layer 52 has a second width, and the second width is smaller than the first width. Specifically, the width difference between the second width and the first width is between 0.2um and 2um, so as to avoid the etching solution from reacting with the first metal layer 32 when etching the second metal layer 52, and to make the first metal layer 32 support the second metal layer 52 in a wider range as possible, so as to better support and protect the second metal layer 52.

[0043] In some embodiments, reference Figure 1 As shown, along the thickness direction of the substrate 10, the thickness of the first metal layer 32 is between 0.05um and 0.15um, so as to provide a better support effect. The second metal layer 52 covers the first metal layer 32, and its covering thickness is the same as the thickness of the first metal layer 32. Since the second metal layer 52 is formed by full-surface deposition, the second metal layer 52 has a uniform thickness in the thickness direction of the substrate 10. In order to keep the height between the eaves layer 42 and the pixel definition layer 20 the same as the original design, the present application needs to increase the thickness of the second metal layer 52 by 0.05um to 0.15um on the original basis.

[0044] In some embodiments, reference Figure 1 As shown, the second metal layer 52 has a main body 521, a protruding portion 522 and an extending portion 523, the extending portion 523 is connected to the main body 521 and extends toward the pixel definition layer 20, and the protruding portion 522 is connected to the main body 521 and protrudes in a direction away from the pixel definition layer 20; in the height direction of the substrate 10, the heights of the extending portion 523, the protruding portion 522 and the first metal layer 32 are the same. It can be understood that in Figure 1There are multiple dotted lines on the second metal layer 52, which are used to distinguish different areas on the second metal layer 52, and do not represent that there are structures such as lines and surfaces here. The extension portion 523 extends to the pixel definition layer 20 to cover the sidewalls of the first metal layer 32. When the second metal material layer 51 is deposited on the entire surface, since the first metal layer 32 has been formed on the pixel definition layer 20, a convex portion will be formed in the area corresponding to the first metal layer 32 in the second metal material layer 51, so the extension portion 523, the convex portion 522 and the first metal layer 32 have the same height.

[0045] In some embodiments, reference Figure 1 As shown, a step surface 5221 is formed between the protrusion 522 and the main body 521, and the eaves layer 42 is arranged on the protrusion 522 and the step surface 5221. The step surface 5221 is formed when the second metal layer 52 covers the first metal layer 32 downward, causing part of the main body 521 to sink. When the eaves material layer 41 is formed by deposition on the entire surface, since the second metal layer 52 has been formed first, the eaves layer 42 arranged on the protrusion 522 and the step surface will form a shape corresponding to it.

[0046] In some embodiments, reference Figure 1 As shown, the first metal layer 32, the second metal layer 52 and the eaves layer 42 have the same center line to form a symmetrical isolation structure.

[0047] Reference Figures 2 to 10 As shown, the present application provides a method for preparing a display panel, which specifically includes steps S100 to S400.

[0048] Step S100: providing a substrate 10 .

[0049] Combination Figure 3 As shown, the substrate 10 may include a substrate and a driving circuit layer 11. The driving circuit layer 11 is disposed on the substrate to drive the sub-pixels to emit light. The substrate and the driving circuit layer 11 are not specifically limited here.

[0050] Step S200 : forming a pixel definition layer 20 on the substrate 10 .

[0051] Combination Figure 3 As shown, the pixel definition layer 20 is disposed on one side surface of the substrate 10. The pixel definition layer 20 protrudes from the substrate 10 and defines a plurality of pixel accommodation areas for accommodating sub-pixels. The sub-pixels are disposed in the pixel accommodation areas, and the sub-pixels include an anode 70, an organic light-emitting layer, and a cathode which are sequentially stacked from close to the drive substrate 10 to away from the drive substrate 10; wherein the anode 70 is connected to the anode power line, and the cathode is connected to the cathode power line, so that the organic light-emitting layer is conductive and emits light.

[0052] Step S300 : forming a first metal material layer 31 on the side of the pixel definition layer 20 away from the substrate 10 , the first metal material layer 31 extending from the substrate 10 to the pixel definition layer 20 , and processing the first metal material layer 31 to obtain a first metal layer 32 .

[0053] Combination Figure 4 As shown, the first metal material layer 31 is a layer structure formed by depositing a certain metal material. In the display panel, the first metal material layer 31 is a layer structure formed by depositing a vapor deposition source containing the first metal material. The first metal material layer 31 extends from the substrate 10 to the pixel definition layer 20 to form a whole layer structure covering the substrate 10 and the pixel definition layer 20. When the first metal material layer 31 is processed to obtain the first metal layer 32, a processing process such as dry etching and wet etching can be used.

[0054] Step S400: A second metal material layer 51 and an eaves material layer 41 are sequentially formed on the first metal layer 32, wherein the second metal material layer 51 and the eaves material layer 41 extend from the substrate 10 to the first metal layer 32, and the second metal material layer 51 and the eaves material layer 41 are processed to obtain the eaves layer 42 and the second metal layer 52 in sequence.

[0055] Combination Figures 5 to 9 As shown, the second metal material layer 51 is a layer structure formed by depositing a certain metal material. In the display panel, the second metal material layer 51 is a layer structure formed by depositing a vapor deposition source containing the second metal material, and the eaves material layer 41 is a layer structure formed by depositing an inorganic material. The second metal material layer 51 and the eaves material layer 41 extend from the substrate 10 to the first metal layer 32 to form a whole layer structure covering the substrate 10 and the first metal layer 32. When the second metal material layer 51 and the eaves material layer 41 are processed to obtain the second metal layer 52 and the eaves layer 42, dry etching, wet etching and other processing processes can be used.

[0056] Among them, along the length direction of the substrate 10, the width of the first metal layer 32, the width of the second metal layer 52 and the width of the eaves layer 42 are smaller than the width of the pixel definition layer 20, the width of the eaves layer 42 is larger than the width of the second metal layer 52 so that the eaves layer 42 extends outside the second metal layer 52, and the width of the second metal layer 52 is larger than the width of the first metal layer 32; along the thickness direction of the substrate 10, part of the second metal layer 52 extends along the peripheral side of the first metal layer 32 to the pixel definition layer 20.

[0057] In this embodiment, a first metal material layer 31 is formed on the pixel definition layer 20, and the first metal layer 32 is obtained by processing; a second metal material layer 51 and an eaves material layer 41 are formed on the first metal layer 32, and the second metal layer 52 and the eaves material layer 41 are obtained by processing. By setting the width of the eaves layer 42 to be greater than the second metal layer 52, so that the eaves layer 42 extends outside the second metal layer 52, it is possible to block the evaporation angle when depositing the light-emitting layer and cathode of the sub-pixel. By setting the width of the second metal layer 52 to be greater than the first metal layer 32, part of the second metal can extend along the peripheral side of the first metal layer 32 to the pixel definition layer 20 along the thickness direction of the substrate 10, so that the surface of the first metal layer 32 close to the second metal layer 52 and the peripheral side surface are covered by the second metal layer 52. Compared with the prior art, in this embodiment, when the second metal layer 52 is etched, it will not react with the first metal layer 32, so that the side wall of the second metal layer 52 will be smoother, and the cathode will be more stable after being directly overlapped with the second metal layer 52.

[0058] In the present application, there are two embodiments of the method for preparing the eaves layer 42 and the second metal layer 52 by processing the second metal material layer 51 and the eaves material layer 41 in sequence. Since the etching process is not specifically shown in the figure, both embodiments can be referred to. Figures 5 to 9 As shown, the details are as follows:

[0059] In some embodiments, in combination Fig.10 As shown, the steps of processing the second metal material layer 51 and the eaves material layer 41 to sequentially obtain the eaves layer 42 and the second metal layer 52 specifically include steps S211 to S213.

[0060] Step S211 : forming a mask layer 60 on the eaves layer 42 .

[0061] The mask layer 60 is a photoresist material. After the photoresist material is coated on the eaves layer, the mask layer 60 is formed by a photolithography process and is used as an anti-corrosion material during an etching process to form a desired isolation structure.

[0062] Step S212 : performing dry etching on the eaves material layer 41 through the mask layer 60 to obtain the eaves layer 42 .

[0063] Since the mask layer 60 is corrosion-resistant, during dry etching, the portion of the eaves material layer 41 not covered by the mask layer 60 is etched, and the portion of the eaves material layer 41 covered is the eaves layer 42 .

[0064] Step S213 : wet-etching the second metal material layer 51 through the mask layer 60 to obtain the second metal layer 52 .

[0065] Since the mask layer 60 covers both the eaves material layer 41 and the second metal material layer 51 and is corrosion-resistant, during wet etching, the portion of the second metal material layer 51 not covered by the mask layer 60 is etched, and the covered portion of the eaves material layer 41 is the second metal layer 52.

[0066] In this embodiment, the eaves layer 42 is etched by dry etching and the second metal layer 52 is etched by wet etching. The process is simple and the forming efficiency is high. The above method can form a second metal layer 52 with the same width and an eaves layer 42 arranged on the second metal layer 52 to prepare an isolation structure.

[0067] In another embodiment, in combination Fig.11 As shown, the steps of processing the second metal material layer 51 and the eaves material layer 41 in sequence to obtain the eaves layer 42 and the second metal layer 52 specifically include steps S221 to S224:

[0068] Step S221 : forming a mask layer 60 on the eaves layer 42 .

[0069] The mask layer 60 in step S221 is the same as the mask layer 60 in step S211 , and will not be described in detail herein.

[0070] Step S222 : performing dry etching on the eaves material layer 41 through the mask layer 60 to obtain the eaves layer 42 .

[0071] The method for preparing the eaves layer 42 in step S222 is the same as the method for preparing the eaves layer 42 in step S212, and will not be elaborated here.

[0072] Step S223 : After dry etching a portion of the second metal material layer 51 through the mask layer 60 , the thickness of the dry etching is between 2 / 3 and 3 / 4 of the thickness of the second metal material layer 51 in the thickness direction of the substrate 10 .

[0073] Since dry etching has better stability and is easy to control the etching thickness, more thickness can be etched out by dry etching first, and the remaining part of the first metal material layer 31 is formed by wet etching.

[0074] Step S224 : wet-etching a portion of the second metal material layer 51 through the mask layer 60 to obtain the second metal layer 52 . In the thickness direction of the substrate 10 , the thickness of the wet etching is between 1 / 4 and 1 / 3 of the thickness of the second metal material layer 51 .

[0075] Wet etching is isotropic, that is, etching occurs in both the vertical and lateral directions. Performing wet etching on the basis of dry etching can form a first metal layer 32 with an inclined surface, and the first metal layer 32 with an inclined surface can have a larger overlap area with the cathode.

[0076] In this embodiment, dry etching followed by wet etching can form a second metal layer 52 that is wide at the top and narrow at the bottom and an eaves layer 42 disposed on the second metal layer 52 to prepare an isolation structure. Such a design can form a first metal layer 32 with an inclined surface, which has a larger overlap area with the cathode.

[0077] In this application, unless otherwise clearly specified and limited, the terms "disposed (provided with)", "connected" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0078] In the description of this specification, the description of reference terms such as "some embodiments" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment are included in at least one embodiment of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0079] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A display panel, characterized in that: include: substrate; A pixel definition layer, the pixel definition layer is disposed on the substrate; An isolation structure, the isolation structure comprising a first metal layer, a second metal layer and an eaves layer which are stacked, wherein along the length direction of the substrate, the width of the first metal layer, the width of the second metal layer and the width of the eaves layer are smaller than the width of the pixel definition layer, the width of the eaves layer is larger than the width of the second metal layer so that the eaves layer extends outside the second metal layer, and the width of the second metal layer is larger than the width of the first metal layer; Along the thickness direction of the substrate, a portion of the second metal layer extends along the peripheral side of the first metal layer to the pixel definition layer.

2. The display panel according to claim 1, characterized in that: From a direction away from the pixel definition layer to a direction close to the pixel definition layer, the width of the second metal layer gradually decreases, and the width of the first metal layer is the same.

3. The display panel according to claim 2, characterized in that: In the plane of the first metal layer away from the pixel definition layer along the length direction of the substrate, the first metal layer has a first width, the second metal layer has a second width, the second width is smaller than the first width, and the width difference between the second width and the first width is between 0.2um and 2um.

4. The display panel according to claim 3, characterized in that: Along the thickness direction of the substrate, the thickness of the first metal layer is between 0.05um and 0.15um.

5. The display panel according to claim 1, characterized in that: The second metal layer has a main body, a protruding portion and an extending portion, the extending portion is connected to the main body and extends toward the pixel definition layer, and the protruding portion is connected to the main body and protrudes in a direction away from the pixel definition layer; in the height direction of the substrate, the extending portion, the protruding portion and the first metal layer have the same height.

6. The display panel according to claim 5, characterized in that: A step surface is provided between the protruding portion and the main body, and the eaves layer is provided on the protruding portion and the step surface.

7. The display panel according to claim 1, characterized in that: The first metal layer, the second metal layer and the eaves layer have the same center line.

8. A method for preparing a display panel, characterized in that: include: providing a substrate; forming a pixel definition layer on the substrate; forming a first metal material layer on a side of the pixel definition layer away from the substrate, wherein the first metal material layer extends from the substrate to the pixel definition layer, and processing the first metal material layer to obtain a first metal layer; forming a second metal material layer and an eaves material layer on the first metal layer in sequence, wherein the second metal material layer and the eaves material layer extend from the substrate to the first metal layer, and processing the second metal material layer and the eaves material layer in sequence to obtain the eaves layer and the second metal layer; Wherein, along the length direction of the substrate, the width of the first metal layer, the width of the second metal layer and the width of the eaves layer are smaller than the width of the pixel definition layer, the width of the eaves layer is larger than the width of the second metal layer so that the eaves layer extends outside the second metal layer, and the width of the second metal layer is larger than the width of the first metal layer; Along the thickness direction of the substrate, a portion of the second metal layer extends along the peripheral side of the first metal layer to the pixel definition layer.

9. The method for preparing a display panel according to claim 8, characterized in that: The step of processing the second metal material layer and the eaves material layer to obtain the eaves layer and the second metal layer in sequence comprises: forming a mask layer on the eaves layer; Dry-etching the eaves material layer through the mask layer to obtain the eaves layer; The second metal layer is obtained by wet etching the second metal material layer through the mask layer.

10. The method for preparing a display panel according to claim 8, characterized in that: The step of processing the second metal material layer and the eaves material layer to obtain the eaves layer and the second metal layer in sequence comprises: forming a mask layer on the eaves layer; Dry-etching the eaves material layer through the mask layer to obtain the eaves layer; After dry etching a portion of the second metal material layer through the mask layer, the thickness of the dry etching in the thickness direction of the substrate is between 2 / 3 and 3 / 4 of the thickness of the second metal material layer; A portion of the second metal material layer is wet-etched through the mask layer to obtain a second metal layer. In the thickness direction of the substrate, the thickness of the wet etching is between 1 / 4 and 1 / 3 of the thickness of the second metal material layer.

Images