Semiconductor nanoparticles, method for manufacturing semiconductor nanoparticles, semiconductor nanoparticles composite,

Abstract

Disclosed are a semiconductor nanoparticle, a semiconductor nanoparticle composite including the semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle, the semiconductor nanoparticles include a first semiconductor nanocrystal comprising silver, indium, gallium, and sulfur, and a second semiconductor nanocrystal comprising zinc, gallium, and sulfur. The semiconductor nanoparticles are configured to emit green light. The green light has a peak emission wavelength of from about 500 nm to about 580 nm. In the semiconductor nanoparticles, the molar ratio of zinc to indium is from about 0.1: 1 to about 10: 1.

Description

[0001] This application claims priority to and all rights arising from Korean Patent Application No. 10-2023-0103801 filed in the Korean Intellectual Property Office on August 8, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Disclosed are a semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. Background Art

[0003] Semiconductor nanoparticles can exhibit different aspects, characteristics or properties from corresponding bulk materials with substantially the same chemical composition. For example, semiconductor nanoparticles can have different physical properties (e.g., band gap energy, luminescent properties, etc.) based on nanostructures. Semiconductor nanoparticles can be configured to emit light when excited by energy (such as incident light or applied voltage). Luminescent nanostructures can find applicability in various devices (e.g., display panels or electronic devices including display panels). From an environmental perspective, it is desirable to provide luminescent nanoparticles that do not contain harmful heavy metals (such as cadmium) while providing improved luminescent properties. Summary of the invention

[0004] One aspect relates to semiconductor nanoparticles that are capable of emitting light and exhibiting improved optical properties (eg, relatively high excitation light absorptivity or narrow half-maximum full width) and improved stability (eg, process stability and / or chemical stability).

[0005] One aspect relates to a population of semiconductor nanoparticles.

[0006] One aspect relates to a method of making semiconductor nanoparticles.

[0007] One aspect relates to compositions (eg, ink compositions) that include semiconductor nanoparticles.

[0008] One aspect relates to a color conversion panel including semiconductor nanoparticles.

[0009] One aspect relates to an electronic device (eg, a display device) including semiconductor nanoparticles or a color conversion panel.

[0010] In one aspect, the semiconductor nanoparticles include a first semiconductor nanocrystal comprising silver, indium, gallium, and sulfur and a second semiconductor nanocrystal comprising zinc, gallium, and sulfur,

[0011] Among them, semiconductor nanoparticles are constructed to emit green light,

[0012] In the semiconductor nanoparticles, a molar ratio of zinc to indium (Zn:In) is greater than or equal to about 0.1:1 and less than or equal to about 10:1.

[0013] The green light may have a peak emission wavelength greater than or equal to about 500 nanometers (nm), or greater than or equal to about 505 nm and less than or equal to about 580 nm, or less than or equal to about 550 nm.

[0014] The semiconductor nanoparticles may have a relative molar value of zinc of greater than or equal to about 0.05, or greater than or equal to about 0.08 and less than or equal to about 0.9, or less than or equal to about 0.8 as defined by the following equation:

[0015] Relative molar value of zinc = [Zn] / ([Ag]+[In]+[Ga]+[Zn])

[0016] Wherein, in the equation, [Ag], [In], [Ga], and [Zn] are the molar numbers of silver, indium, gallium, and zinc in the semiconductor nanoparticles, respectively.

[0017] In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be greater than or equal to about 2.5: 1, greater than or equal to about 3: 1. In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be less than or equal to about 10: 1, less than or equal to about 7: 1, or less than or equal to about 5: 1.

[0018] In an embodiment, the semiconductor nanoparticles may have a charge balance value greater than or equal to about 0.8, or greater than or equal to about 0.9 and less than or equal to about 1.3, or less than or equal to about 1.2, represented by the following equation:

[0019] Charge balance value = {[Ag] + 3([In] + [Ga]) + 2[Zn]} / (2[S])

[0020] Wherein, in the above equation, [Ag], [In], [Ga], [Zn] and [S] are the molar numbers of silver, indium, gallium, zinc and sulfur in the semiconductor nanoparticles, respectively.

[0021] In the semiconductor nanoparticles, the relative molar value of zinc may be greater than or equal to about 0.08. In the semiconductor nanoparticles, the relative molar value of zinc may be less than or equal to about 0.5.

[0022] In the semiconductor nanoparticles, a molar ratio of zinc to indium (Zn:In) may be greater than or equal to about 0.5: 1. In the semiconductor nanoparticles, a molar ratio of zinc to indium (Zn:In) may be less than or equal to about 5:1.

[0023] In the semiconductor nanoparticles, a molar ratio of the number of moles of gallium to the sum of the number of moles of indium and gallium [Ga:(In+Ga)] may be greater than about 0.7:1 and less than or equal to about 0.84:1.

[0024] In the semiconductor nanoparticles, a molar ratio of gallium to silver (Ga:Ag) may be greater than or equal to about 1.1: 1. In the semiconductor nanoparticles, a molar ratio of gallium to silver (Ga:Ag) may be less than or equal to about 3:1.

[0025] In the semiconductor nanoparticles, the molar ratio of the molar number of gallium to the sum of the molar numbers of gallium, indium and silver (Ga:(Ga+In+Ag)) can be greater than or equal to about 0.45:1, greater than or equal to about 0.48:1 and less than or equal to about 0.6:1, less than or equal to about 0.54:1, or less than or equal to about 0.52:1.

[0026] In the semiconductor nanoparticles, the molar ratio of the sum of the moles of indium and gallium to the mole of sulfur ((In+Ga):S) may be greater than or equal to about 0.2:1, or greater than or equal to about 0.4:1. In the semiconductor nanoparticles, the molar ratio of the sum of the moles of indium and gallium to the mole of sulfur ((In+Ga):S) may be less than or equal to about 0.8:1, or less than or equal to about 0.6:1.

[0027] In the semiconductor nanoparticles, the molar ratio of the sum of the moles of indium and gallium to the moles of silver ((In+Ga):Ag) may be greater than or equal to about 1.4: 1. In the semiconductor nanoparticles, the molar ratio of the sum of the moles of indium and gallium to the moles of silver ((In+Ga):Ag) may be less than or equal to about 3.7: 1, or less than or equal to about 2: 1.

[0028] In the semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) may be greater than or equal to about 0.2: 1. In the semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) may be less than or equal to about 0.5:1, or less than or equal to about 0.4:1.

[0029] In the semiconductor nanoparticles, the molar ratio of the moles of silver to the sum of the moles of silver, indium and gallium (Ag: (Ag + In + Ga)) may be greater than or equal to about 0.3: 1. In the semiconductor nanoparticles, the molar ratio of the moles of silver to the sum of the moles of silver, indium and gallium (Ag: (Ag + In + Ga)) may be less than or equal to about 0.5: 1, or less than or equal to about 0.45: 1.

[0030] In the semiconductor nanoparticles, the molar ratio of the moles of sulfur to the sum of the moles of silver, indium and gallium (S: (Ag + In + Ga)) may be greater than or equal to about 0.9:1, or greater than or equal to about 1:1. In the semiconductor nanoparticles, the molar ratio of the moles of sulfur to the sum of the moles of silver, indium and gallium (S: (Ag + In + Ga)) may be less than or equal to about 2.5:1, less than or equal to about 1.35:1, or less than or equal to about 1.15:1.

[0031] In the semiconductor nanoparticles, the molar ratio of the molar number of sulfur to the sum of the molar numbers of silver, indium, gallium and zinc (S:(Ag+In+Ga+Zn)) can be greater than or equal to about 0.69:1, greater than or equal to about 0.7:1, or greater than or equal to about 0.9:1 and less than or equal to about 1.3:1, or less than or equal to about 1.15:1.

[0032] The semiconductor nanoparticles may also include a third semiconductor nanocrystal containing silver, gallium and sulfur. The semiconductor nanoparticles may include a first particle, and the first particle includes a first semiconductor nanocrystal. The first particle may include a first semiconductor nanocrystal and a third semiconductor nanocrystal. The third semiconductor nanocrystal may have a chemical composition different from the chemical composition of the first semiconductor nanocrystal and the second semiconductor nanocrystal. In the first particle, the third semiconductor nanocrystal may be arranged on the first semiconductor nanocrystal.

[0033] In the semiconductor nanoparticle, the second semiconductor nanocrystal can be arranged on the first semiconductor nanocrystal (e.g., core) or the first particle. In the semiconductor nanoparticle, the second semiconductor nanocrystal can surround at least a portion of the first semiconductor nanocrystal or the first particle. The third semiconductor nanocrystal can be arranged between the first semiconductor nanocrystal and the second semiconductor nanocrystal.

[0034] The semiconductor nanoparticle may also include a fourth semiconductor nanocrystal comprising zinc and sulfur. The fourth semiconductor nanocrystal may have a chemical composition different from the chemical composition of the second semiconductor nanocrystal. In the semiconductor nanoparticle, the fourth semiconductor nanocrystal may be arranged on the second semiconductor nanocrystal. The second semiconductor nanocrystal may be the outermost layer of the semiconductor nanoparticle. The fourth semiconductor nanocrystal (if present) may be the outermost layer of the semiconductor nanoparticle.

[0035] The semiconductor nanoparticle may have a core-shell structure having a core and a shell disposed on the core. The core may include a first semiconductor nanocrystal, and the shell may include a second semiconductor nanocrystal. The shell may be a multilayer shell, and the multilayer shell may include a first shell layer disposed on the core, a second shell layer disposed on the first shell layer, and a third shell layer disposed on the second shell layer. The first shell layer may include a third semiconductor nanocrystal. The second shell layer may include a second semiconductor nanocrystal. The third shell layer may include a fourth semiconductor nanocrystal.

[0036] The first semiconductor nanocrystals may not include zinc.

[0037] In a semiconductor nanoparticle, the amount of indium (e.g., the number of moles of indium) in a portion adjacent to a surface of the particle may be less than the amount of indium (e.g., the number of moles of indium) in a central portion (e.g., the core) of the particle. In a semiconductor nanoparticle, the amount of zinc (e.g., the number of moles of zinc) in a portion close to or adjacent to a surface of the particle may be greater than the amount of zinc (e.g., the number of moles of zinc) in a central portion (e.g., the core) of the particle. In a semiconductor nanoparticle, the zinc concentration (e.g., the number of moles of zinc per cubic nanometer) may be greater in the outer portion or outer portion of the particle than in the inner portion or inner portion of the particle.

[0038] Green light may include band edge emission.

[0039] The semiconductor nanoparticles may have an (absolute) quantum yield of greater than or equal to about 65%, or greater than or equal to about 70%. The quantum yield may be less than or equal to about 98%, or less than or equal to about 85%.

[0040] The semiconductor nanoparticles may have a half-maximum full width of less than or equal to about 40 nm, or less than or equal to about 35 nm. The half-maximum full width may be greater than or equal to about 5 nm, greater than or equal to about 10 nm, greater than or equal to about 15 nm, or greater than or equal to about 25 nm.

[0041] The semiconductor nanoparticles may have a percentage of trap emission obtained by the following equation, wherein the percentage of trap emission is less than or equal to about 25%, less than or equal to about 23%, less than or equal to about 21%, less than or equal to about 20%, less than or equal to about 15%, or less than or equal to about 10%:

[0042] Trap emission percentage (%) = [trap emission area of ​​emission spectrum / total area of ​​emission spectrum] × 100

[0043] In this equation, the well emission area refers to the area of ​​the peak within a wavelength range greater than or equal to the peak emission wavelength plus 50 nm.

[0044] The method of manufacturing semiconductor nanoparticles of an embodiment includes: in the presence of a first semiconductor nanocrystal including indium, gallium, silver and sulfur (or a first particle including the first semiconductor nanocrystal), combining a zinc precursor, a gallium precursor and a sulfur precursor in a reaction medium and heating the reaction medium at a reaction temperature (e.g., reacting therebetween) to form a second semiconductor nanocrystal including zinc, gallium and sulfur on the first semiconductor nanocrystal.

[0045] Combining can include adding the first semiconductor nanocrystals or first particles and the zinc precursor to a reaction medium including a sulfur precursor and an organic solvent.

[0046] The reaction temperature can be a temperature greater than or equal to about 140°C, greater than or equal to about 150°C, greater than or equal to about 180°C and less than about 240°C, or less than or equal to about 235°C (or the reaction can be carried out at a temperature greater than or equal to about 140°C, greater than or equal to about 150°C, greater than or equal to about 180°C and less than about 240°C, or less than or equal to about 235°C).

[0047] The sulfur precursor may include a thiol compound, an isothiocyanate compound, a thiourea compound, or a combination thereof. The gallium precursor may include a gallium halide. The gallium halide may include gallium chloride, gallium fluoride, or both gallium chloride and gallium fluoride. The zinc precursor may include a zinc halide.

[0048] The reaction temperature may be greater than or equal to about 190°C, or greater than or equal to about 205°C and less than or equal to about 230°C, or less than or equal to about 220°C.

[0049] The reaction time may be greater than or equal to about 10 minutes and less than or equal to about 5 hours.

[0050] The reaction time may be greater than or equal to about 30 minutes and less than or equal to about 2 hours.

[0051] The organic solvent may include an aliphatic amine.The organic ligand may include a thiol compound.

[0052] In an embodiment, the ink composition includes semiconductor nanoparticles and a liquid carrier. The semiconductor nanoparticles or a group thereof may be dispersed in the liquid carrier. The liquid carrier may include a liquid monomer, a (volatile) organic solvent, or a combination thereof. The ink composition may substantially exclude a volatile organic solvent (e.g., based on the total volume of the ink composition, the volatile organic solvent is less than 1 volume percent (vol%), or less than 0.1 vol%). The ink composition may also include fine metal oxide particles.

[0053] In an embodiment, the composite includes a matrix and semiconductor nanoparticles dispersed in the matrix. The composite may further include metal oxide fine particles. The composite may be configured to emit green light. The composite may be a patterned film. The composite may further include semiconductor nanoparticles configured to emit a second light different from green light.

[0054] In an embodiment, when the composite is kept in air at room temperature (e.g., 20° C. to 25° C.) for 48 hours, the relative luminous efficiency defined by the following equation may be greater than or equal to about 50%, or greater than or equal to about 60%:

[0055] Relative luminous efficiency (%) = [luminous efficiency of the complex after 48 hours / initial luminous efficiency of the complex] × 100

[0056] Embodiments provide a color converting layer (eg, a color converting structure or a color converting panel) that includes a color converting region that includes semiconductor nanoparticles as described herein.

[0057] The color conversion panel includes a color conversion layer and optional partition walls, the color conversion layer includes color conversion regions, the partition walls define each region of the color conversion layer, the color conversion regions include a first region corresponding to a first pixel, and the first region includes semiconductor nanoparticles or composites.

[0058] In an embodiment, a display panel or an electronic device includes a light source and a color conversion layer (eg, a color conversion structure) disposed on the light source.

[0059] In an embodiment, the display panel comprises a light emitting panel (or light source), a color conversion panel, and an optional light transmissive layer positioned between the light emitting panel and the color conversion panel.

[0060] The light emitting panel (or light source) may be configured to provide incident light to the color conversion panel. The incident light may include blue light, and optionally green light. The blue light may have a peak emission wavelength of about 440 nm to about 460 nm, or about 450 nm to about 455 nm.

[0061] The light source may include an organic light emitting diode (OLED), a micro-LED, a mini-LED, an LED including nanorods, or a combination thereof.

[0062] In an embodiment, an electronic device (or a display device) includes a color conversion panel or a display panel.

[0063] According to one aspect, semiconductor nanoparticles may exhibit improved optical properties (e.g., improved blue light absorptivity, relatively narrow half-maximum full width, relatively high luminous efficiency, and / or suppressed trap emission), and / or may exhibit stability (e.g., chemical stability and / or thermal stability), contributing to improved device stability. On one hand, the light conversion sheet or color conversion panel may utilize a light source (e.g., various light sources), and may be used in a liquid crystal display device, a QD OLED display device, and / or a QD micro-LED display device, in which the QD color conversion layer or pixel is correspondingly applied to a blue LED, a blue OLED, and / or a blue micro-LED. Semiconductor nanoparticles and color conversion panels may be applied to various devices, such as TVs, monitors, mobile devices, VR / AR, automotive displays, etc., but embodiments are not limited thereto. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] The above and other aspects, features and advantages of certain exemplary embodiments will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0065] Figure 1A and Figure 1B is a schematic cross-section of a semiconductor nanoparticle according to an embodiment.

[0066] Figure 1C is a graph of normalized photoluminescence intensity (arbitrary units, au) versus wavelength (nanometers, nm) illustrating the concept of percent trap emission.

[0067] Figure 2A is a flow chart illustrating a pattern forming process (photolithography method) using the ink composition of one or more embodiments.

[0068] Figure 2B is a flow chart illustrating a pattern forming process (inkjet method) using the ink composition of one or more embodiments.

[0069] Figure 3A is a schematic cross-sectional view of a color conversion panel according to one or more embodiments.

[0070] Figure 3B is a cross-sectional view of an electronic device (display device) including a color conversion panel according to one or more embodiments.

[0071] Figure 4A is a perspective view illustrating an example of a display panel including a color conversion panel according to one or more embodiments.

[0072] Figure 4B is an exploded view of a display device according to one or more embodiments.

[0073] Figure 4C yes Figure 4A A cross-sectional view of a display panel.

[0074] Figure 4D is an exploded view of a display device according to one or more embodiments.

[0075] Figure 5A It is shown Figure 4A A plan view of an example of a pixel arrangement of a display panel.

[0076] Figure 5B , Figure 5C , Figure 5D and Figure 5E They are cross-sectional views showing examples of light emitting devices according to one or more embodiments, respectively.

[0077] Figure 6 It is taken along line IV-IV Figure 5A A cross-sectional view of a display panel.

[0078] Fig. 7A is a schematic cross-sectional view of a display device (eg, a liquid crystal display device) according to one or more embodiments.

[0079] Figure 7B is a schematic cross-sectional view of an electronic device (eg, an electroluminescent device) according to one or more embodiments.

[0080] Fig. 8A and Figure 8B The mapping results of transmission electron microscope electron energy loss spectroscopy (TEM-EELS) of the semiconductor nanoparticles of Example 1 are shown. Fig. 8A In the figure, yellow represents indium, blue represents silver, and Figure 8B In the figure, green represents zinc and red represents gallium. DETAILED DESCRIPTION

[0081] With reference to the exemplary embodiment described in more detail below and in conjunction with the accompanying drawings, the advantages and features of the technology described hereinafter and the methods for realizing them will become apparent. However, the embodiments should not be construed as being limited to the exemplary embodiments set forth herein. If not otherwise defined, all terms (including technical terms and scientific terms) as used herein can be defined as commonly understood by those skilled in the art. Unless clearly defined, the terms defined in the commonly used dictionaries will not be interpreted ideally or exaggeratedly. In addition, unless clearly described to the contrary, the word "include" and its variants (such as "include" or "contain") will be understood to imply the elements stated, but do not exclude any other elements.

[0082] In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals refer to like elements throughout the specification.

[0083] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0084] As used herein, the singular forms "a", "an", and "the" are intended to include plural forms including "at least one", unless the context clearly indicates otherwise. For example, the phrase "semiconductor nanoparticle" may refer to a single semiconductor nanoparticle or may refer to a plurality of semiconductor nanoparticles. "At least one" should not be interpreted as limited to "one" or "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0085] It will be understood that, although the terms first, second, third, etc. can be used here to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teaching of the embodiment presented, the first element, first component, first region, first layer or first part discussed below can be referred to as the second element, second component, second region, second layer or second part.

[0086] Exemplary embodiments are described herein with reference to schematically illustrated cross-sectional illustrations as idealized embodiments. In this way, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances will be expected. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions shown here, but will include deviations in shapes, for example, caused by manufacturing. For example, a region shown or described as flat may generally have rough and / or nonlinear features. In addition, the pointed angles (acute angles) shown may be rounded (rounded). Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions, and are not intended to limit the scope of the claims presented.

[0087] As used herein, "about" or "approximately" includes the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±10%, ±5% of the stated value.

[0088] Unless mentioned to the contrary, the numerical ranges described here are inclusive. Unless mentioned to the contrary, the numerical ranges described here include any real number within the endpoints of the stated range and include its endpoints. In this specification, numerical endpoints or upper or lower values ​​(for example, described as "greater than or equal to value", "at least value" or "less than or equal to value", or described as "from" or "to") can be used to form a numerical range for a given feature. In other words, the upper and lower endpoints set forth for various numerical values ​​can be independently combined to provide a range.

[0089] As used herein, the expression "does not include cadmium (or other harmful heavy metals)" may refer to a situation where the concentration of cadmium (or other harmful heavy metals) may be less than or equal to about 100 parts per million by weight (ppmw), less than or equal to about 50 ppmw, less than or equal to about 10 ppmw, less than or equal to about 1 ppmw, less than or equal to about 0.1 ppmw, less than or equal to about 0.01 ppmw, or about zero. In one or more embodiments, a certain amount of cadmium (or other harmful heavy metals) may be substantially absent, or if present, the amount of cadmium (or other harmful heavy metals) may be less than or equal to the detection limit of a given analytical tool or as an impurity level.

[0090] As used herein, "chemical composition" refers to the identity, arrangement, and ratio of chemical elements of chemical substances. As used herein, "different chemical composition" refers to differences in identity, arrangement, ratio of chemical elements, or a combination thereof, for at least one chemical substance when compared between a first material and a second material.

[0091] Hereinafter, as used herein, when no definition is otherwise provided, "substituted" means that at least one hydrogen of the compound is replaced by a substituent selected from the group consisting of C1 to C30 alkyl, C2 to C30 alkenyl, C2 to C30 alkynyl, C6 to C30 aryl, C7 to C30 alkylaryl, C7 to C30 aralkyl, C6 to C30 aryloxy, C6 to C30 arylthio, C1 to C30 alkoxy, C1 to C30 C1 to C30 heteroalkyl, C3 to C30 heteroalkylaryl, C2 to C30 alkylheteroaryl, C2 to C30 heteroarylalkyl, C1 to C30 heteroaryloxy, C1 to C30 heteroarylthio, C3 to C30 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C30 cycloalkynyl, C2 to C30 heterocycloalkyl, halogen (—F, —Cl, —Br or —I), hydroxyl (—OH), nitro (—NO 2 ), cyano (-CN), amino or amine (-NRR', wherein R and R' are independently hydrogen or C1 to C6 alkyl), azido (-N 3), amidino (-C(=NH)NH 2 ), hydrazino (-NHNH 2 ), hydrazone (=N(NH 2 )), aldehyde group (-C(=O)H), carbamoyl group (-C(O)NH 2 ), thiol group (-SH), ester group (-C(=O)OR, wherein R is C1 to C6 alkyl or C6 to C12 aryl), carboxyl group (-COOH) or its salt (-C(=O)OM, wherein M is an organic cation or an inorganic cation), sulfonic acid group (-SO 3 H) or its salt (-SO 3 M, wherein M is an organic cation or an inorganic cation), a phosphate group (-PO 3 H 2 ) or its salt (-PO 3 MH or -PO 3 M 2 , wherein M is an organic cation or an inorganic cation) or a combination thereof.

[0092] In addition, when no definition is otherwise provided below, "hetero" means a case where 1 to 3 hetero atoms selected from N, O, P, Si, S, Se, Ge and B are included.

[0093] In addition, the term "aliphatic hydrocarbon group" as used herein refers to a C1 to C30 straight chain or branched alkyl group, a C2 to C30 straight chain or branched alkenyl group, or a C2 to C30 straight chain or branched alkynyl group, and the term "aromatic organic group" as used herein refers to a C6 to C30 aryl group or a C2 to C30 heteroaryl group.

[0094] As used herein, the term "(meth)acrylate" refers to acrylate and / or methacrylate.

[0095] As used herein, the term "group" refers to a group of the periodic table of elements.

[0096] As used herein, the terms "nanoparticle" and "nanostructure" refer to structures with at least one region or characteristic size in nanometer scale. In one or more embodiments, the size of nanoparticle or nanostructure can be less than about 500nm, less than about 300nm, less than about 250nm, less than about 150nm, less than about 100nm, less than about 50nm or less than about 30nm. Nanoparticle or nanostructure can have any shape such as nanowire, nanorod, nanotube, multi-arm shape with two or more arms (pod) or nanodot, but embodiments are not limited thereto. Nanoparticle or nanostructure can be, for example, substantially crystalline, substantially monocrystalline, polycrystalline, amorphous or its combination.

[0097] Quantum dots can be, for example, nanometer (crystal) particles containing semiconductors that can exhibit quantum confinement effects or exciton confinement effects, and are a luminescent nanostructure (e.g., capable of emitting light by energy excitation). Here, unless otherwise clearly defined, the shape of "quantum dots" or nanoparticles is not limited.

[0098] As used herein, the term "dispersion" refers to a dispersion in which the dispersed phase is a solid and the continuous medium includes a liquid or a solid different from the dispersed phase. It will be understood that a "dispersion" can be a colloidal dispersion in which the dispersed phase has a size greater than or equal to about 1 nm (e.g., greater than or equal to about 2 nm, greater than or equal to about 3 nm, or greater than or equal to about 4 nm) and a few microns (μm) or less (e.g., less than or equal to about 2 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 800 nm, less than or equal to about 700 nm, less than or equal to about 600 nm, or less than or equal to about 500 nm).

[0099] Here, the dimension (size, diameter, thickness, etc.) can be the value of a single entity or the average value of multiple nanoparticles. As used herein, the term "average value" (e.g., the average size of quantum dots) can be the mean or median. In one or more embodiments, the average value can be the "mean".

[0100] As used herein, the term "maximum emission wavelength" is the wavelength at which a given emission spectrum of light reaches its maximum.

[0101] In one or more embodiments, the quantum efficiency can be easily and reproducibly determined using commercially available equipment (e.g., from Hitachi or Hamamatsu, etc.) and with reference to instructions provided by, for example, the corresponding equipment manufacturer. The quantum efficiency (which can be used interchangeably with the term "quantum yield" (QY)) can be measured in a solution state or a solid state (i.e., in a complex). In one or more embodiments, the quantum efficiency (or quantum yield) is the ratio of photons emitted by a nanostructure (or a population of nanostructures) to photons absorbed. In one or more embodiments, the quantum efficiency can be measured by any method. For example, there can be two methods for measuring fluorescence quantum yield or efficiency: an absolute method and a relative method. The quantum efficiency measured by the absolute method can be referred to as the absolute quantum efficiency.

[0102] In the absolute method, the quantum efficiency can be obtained by detecting the fluorescence of all samples via an integrating sphere. In the relative method, the quantum efficiency of the unknown sample can be calculated by comparing the fluorescence intensity of the standard dye (standard sample) with the fluorescence intensity of the unknown sample. Coumarin 153, coumarin 545, rhodamine 101 inner salt, anthracene and rhodamine 6G can be used as standard dyes according to their PL wavelengths, but the embodiment is not limited thereto.

[0103] The full width at half maximum (FWHM) and the maximum emission (eg, PL: photoluminescence, or EL: electroluminescence) wavelength can be measured, for example, by a luminescence spectrum (eg, photoluminescence spectrum or electroluminescence spectrum) obtained by a spectrophotometer such as a fluorescence spectrophotometer.

[0104] As used herein, the term "first absorption peak wavelength" refers to a wavelength at which a main peak first appears in the lowest energy region in an ultraviolet-visible (UV-Vis) absorption spectrum.

[0105] Semiconductor nanoparticles can be included in a variety of electronic devices. The electrical properties and / or optical properties of semiconductor nanoparticles can be controlled, for example, by the element composition of semiconductor nanoparticles, the size of semiconductor nanoparticles, and / or the shape of semiconductor nanoparticles. In one or more embodiments, semiconductor nanoparticles can be semiconductor nanocrystal particles. Semiconductor nanoparticles such as quantum dots can have a relatively large surface area per unit volume, so quantum confinement effects can be shown, thereby showing physical optical properties different from the corresponding bulk materials with the same composition. Therefore, semiconductor nanoparticles such as quantum dots can absorb energy (for example, incident light) supplied from an excitation source to form an excited state, and can emit energy corresponding to its band gap energy when relaxing.

[0106] Semiconductor nanoparticles can also be used in a variety of electronic devices such as color conversion panels (e.g., photoluminescent color filters). Unlike a backlight unit that emits white light used in a liquid crystal display device, in a display device including a quantum dot-based color conversion panel or a light-emitting color filter, a quantum dot layer is used as a luminescent material and is disposed in a relatively front portion of the display device to convert incident light (e.g., blue light) provided from a light source into light of a different spectrum (e.g., green light or red light). In such a color conversion panel, color conversion of incident light can occur in a relatively front portion of the display device, and light can be scattered in all directions, which can solve the viewing angle problem of the liquid crystal display device, and can also solve the light loss problem caused by the use of an absorption-type color filter.

[0107] As used herein, the term "color conversion panel" refers to an electronic device that includes a color conversion layer. As used herein, the term "color conversion layer" also includes structures that include color conversion regions (eg, color conversion structures).

[0108] In a display device including a color conversion panel, the properties of the light-emitting nanostructure (e.g., optical properties, stability, etc.) can have a direct impact on the display quality of the display device. It can be expected that the light-emitting material included in the color conversion panel disposed in the relatively front portion of the device not only exhibits a relatively high luminous efficiency, but also exhibits a relatively high absorptivity relative to the incident light. When a patterned film (e.g., a color filter) is used in a display device, the reduced absorptivity of the incident light may be directly caused by blue light leakage, which may have an adverse effect on the color reproducibility of the display device (e.g., DCI matching rate). The use of an absorption-type color filter to prevent the blue light leakage problem may result in an additional reduction in luminous efficiency. This reduced absorptivity of the semiconductor nanoparticles may result in a reduction in the brightness of the display device including the semiconductor nanoparticles.

[0109] Semiconductor nanoparticles can show properties (e.g., optical properties and / or stability) that can be applicable to display devices, but many of them can include cadmium-based compounds (e.g., cadmium sulfide). Cadmium causes serious environmental / health problems, and therefore, in many countries, cadmium is one of restricted elements. Therefore, in order to develop environmentally friendly semiconductor nanoparticles without cadmium, nanocrystals based on III-V compounds have been further studied. However, compared with cadmium-free nanoparticles based on III-V compounds (such as, indium phosphide), there is still a technical demand for developing environmentally friendly nanoparticles, which can show higher absorptivity, narrower full width at half maximum and higher luminous efficiency.

[0110] In an embodiment, the semiconductor nanoparticles include a first semiconductor nanocrystal comprising silver, indium, gallium and sulfur and a second semiconductor nanocrystal comprising zinc, gallium and sulfur, the semiconductor nanoparticles are configured to emit green light, and a molar ratio of zinc to indium (Zn:In) in the semiconductor nanoparticles is greater than or equal to about 0.1:1 and less than or equal to about 10:1.

[0111] The first semiconductor nanocrystal may include silver, a Group 13 metal (e.g., indium, gallium, or a combination thereof), and a chalcogen (e.g., sulfur and optionally selenium). The first semiconductor nanocrystal may include a quaternary alloy semiconductor material based on a Group 11-13-16 compound including silver (Ag), indium, gallium, and sulfur. The first semiconductor nanocrystal may include silver indium gallium sulfide, e.g., Ag (In x Ga 1-x )S 2(x is greater than 0 and less than 1). The molar ratio between the components in the first semiconductor nanocrystals can be adjusted so that the final semiconductor nanoparticles can have desired composition and optical properties (eg, maximum emission wavelength).

[0112] Reference Figure 1A and Figure 1B In the semiconductor nanoparticles, the second semiconductor nanocrystal (or a layer containing the second semiconductor nanocrystal) 2 can be arranged on the first semiconductor nanocrystal 1 including silver, indium, gallium and sulfur or the particle (for example, the first particle) containing it. The semiconductor nanoparticles can also include a third semiconductor nanocrystal 3 containing gallium, sulfur and optional silver. The third semiconductor nanocrystal can include a 13-group metal (indium, gallium or a combination thereof) and a chalcogen (sulfur and optional selenium). The third semiconductor nanocrystal can also include silver (Ag). The third semiconductor nanocrystal can include silver, gallium, sulfur and zinc. The third semiconductor nanocrystal can include a ternary alloy semiconductor material containing silver, gallium and sulfur. The above third semiconductor nanocrystal can have a chemical composition different from the chemical composition of the first semiconductor nanocrystal. The third semiconductor nanocrystal can include a 13-16 group compound, a 11-13-16 group compound or a combination thereof. The 13-16 group compound can include gallium sulfide, gallium selenide, indium sulfide, indium selenide, indium gallium sulfide, indium gallium selenide or a combination thereof. The band gap energy of the third semiconductor nanocrystal can be different from the band gap energy of the first semiconductor nanocrystal. The third semiconductor nanocrystal may cover at least a portion of the first semiconductor nanocrystal. The band gap energy of the third semiconductor nanocrystal may be greater than the band gap energy of the first semiconductor nanocrystal. The band gap energy of the third semiconductor nanocrystal may be less than the band gap energy of the first semiconductor nanocrystal. In the third semiconductor nanocrystal, the molar ratio between the components may be adjusted so that the final semiconductor nanoparticles may exhibit a desired composition and optical properties.

[0113] The first particle may include a first semiconductor nanocrystal 1 and a third semiconductor nanocrystal (or a layer including the third semiconductor nanocrystal) 3. The third semiconductor nanocrystal 3 may have a composition different from that of the first semiconductor nanocrystal 1 and the second semiconductor nanocrystal 2. In the first particle, the third semiconductor nanocrystal (or a layer including the third semiconductor nanocrystal) 3 may be disposed on the first semiconductor nanocrystal (or core) 1 (reference: Figure 1A and Figure 1B ).

[0114] The first semiconductor nanocrystal or the first particle may not include zinc. The second semiconductor nanocrystal may include zinc gallium sulfide. In the semiconductor nanoparticle, the second semiconductor nanocrystal (or a layer including it) 2 may be arranged on the first semiconductor nanocrystal 1 or the first particle. In the semiconductor nanoparticle, the second semiconductor nanocrystal may surround at least a portion of the first semiconductor nanocrystal or the first particle. The third semiconductor nanocrystal (or a layer including the third semiconductor nanocrystal) 3 may be arranged between the first semiconductor nanocrystal 1 and the second semiconductor nanocrystal 2.

[0115] Reference Figure 1B , the semiconductor nanoparticle may further include a fourth semiconductor nanocrystal (or a layer including the fourth semiconductor nanocrystal) 4 containing zinc and sulfur. The fourth semiconductor nanocrystal may have a composition different from that of the second semiconductor nanocrystal 2. In the semiconductor nanoparticle, the fourth semiconductor nanocrystal may be disposed on the second semiconductor nanocrystal. The second semiconductor nanocrystal may be the outermost layer of the semiconductor nanoparticle. If present, the fourth semiconductor nanocrystal (or a layer including the fourth semiconductor nanocrystal) 4 may be the outermost layer of the semiconductor nanoparticle. The fourth semiconductor nanocrystal may have a band gap energy wider than the band gap energy of the second semiconductor nanocrystal.

[0116] The semiconductor nanoparticle may have a core-shell structure having a core and a shell disposed on the core. According to the selection, the core may include a first semiconductor nanocrystal, and the shell may include a third semiconductor nanocrystal, a fourth semiconductor nanocrystal, or both the third semiconductor nanocrystal and the fourth semiconductor nanocrystal. The shell may be a multilayer shell, and the multilayer shell may include a first shell disposed on the core, a second shell disposed on the first shell, and a third shell disposed on the second shell. The first shell may include the third semiconductor nanocrystal. The second shell may include the second semiconductor nanocrystal. The third shell may include the fourth semiconductor nanocrystal. In an embodiment, the semiconductor nanoparticle may have a core-multilayer shell structure, such as AgInGaS / AgGaS / ZnGaS, AgInGaS / AgGaS / ZnS, etc.

[0117] In semiconductor nanoparticles, the concentration of indium may vary in the radial direction or may be different. In semiconductor nanoparticles, the indium content of the inner part (e.g., core) of the particle may be different from the indium content of the outer part (e.g., shell) of the particle. In an embodiment, the indium content in the part (e.g., outermost layer or shell) close to the surface or adjacent to the surface may be less than the indium content in the inner part (or core) of the above particle. In an embodiment, the zinc content (concentration) in the part (e.g., outermost layer) close to the surface of the particle or adjacent to the surface of the particle may be greater than the zinc content (concentration) in the inner part (or core) of the semiconductor nanoparticle. The core or the first semiconductor nanocrystal may not include zinc. In semiconductor nanoparticles, the zinc content in the part (e.g., core) close to the surface of the semiconductor nanoparticle or adjacent to the surface of the semiconductor nanoparticle may be greater than the zinc content in the inner part (e.g., core) of the semiconductor nanoparticle. In semiconductor nanoparticles, the concentration of zinc may be greater than the inner part or inside of the semiconductor nanoparticle particle in the outer part or outside of the semiconductor nanoparticle. The core or the first semiconductor nanocrystal may not contain zinc. In the shell, gallium may show a concentration gradient that decreases toward the particle surface. In the shell, the gallium concentration in a portion close to or adjacent to the particle surface may be higher than the gallium concentration in a portion close to or adjacent to the core.

[0118] The second semiconductor nanocrystal and the fourth semiconductor nanocrystal can have a band gap energy wider than the band gap energy of the first particle (for example, including the first semiconductor nanocrystal and the third semiconductor nanocrystal). Without wishing to be bound by a specific theory, the second semiconductor nanocrystal and the optional fourth semiconductor nanocrystal are arranged on the particle including the first semiconductor nanocrystal based on 11-13-16 family compound, which can help to ensure the stability that may be needed for device application. The inventor has found a technical problem, wherein, by arranging a semiconductor nanocrystal (such as zinc sulfide) with a wider band gap energy on the 11-13-16 family semiconductor nanocrystal, the trap emission in the final nanoparticle can be significantly increased. In the semiconductor nanoparticle according to an embodiment, the second semiconductor nanocrystal (and the fourth semiconductor nanocrystal) can not only provide a shell with a relatively wide band gap energy, but also can suppress the increase of trap emission in the final particle.

[0119] In the semiconductor nanoparticles of the embodiment, the molar ratio of zinc to indium (Zn:In) may be greater than or equal to about 0.1:1, greater than or equal to about 0.3:1, greater than or equal to about 0.5:1, greater than or equal to about 0.7:1, greater than or equal to about 0.8:1, greater than or equal to about 0.9:1, greater than or equal to about 1:1, greater than or equal to about 1.3:1, greater than or equal to about 1.5:1, greater than or equal to about 1.6:1, greater than or equal to about 1.7:1, greater than or equal to about 1.8:1, greater than or equal to about 2:1, greater than or equal to about 2.5:1, greater than or equal to about 2.55:1, greater than or equal to about 2.6:1, greater than or equal to about 2.65:1, greater than or equal to about 2.7:1, greater than or equal to about 2.75:1, greater than or equal to about 2.8:1, greater than or equal to about 2.85:1 , greater than or equal to about 2.9:1, greater than or equal to about 2.95:1, greater than or equal to about 3:1, greater than or equal to about 3.05:1, greater than or equal to about 3.1:1, greater than or equal to about 3.2:1, greater than or equal to about 3.3:1, greater than or equal to about 3.4:1, greater than or equal to about 3.5:1, greater than or equal to about 3.6:1, greater than or equal to about 3.7:1, greater than or equal to about 3.8:1, greater than or equal to about 3.9:1, or greater than or equal to about 4:1; less than or equal to about 10:1, less than or equal to about 9:1, less than or equal to about 8:1, less than or equal to about 8.5:1, less than or equal to about 7:1, less than or equal to about 6.5:1, less than or equal to about 6:1, less than or equal to about 5.5:1, less than or equal to about 5:1, or less than or equal to about 3:1; or combinations thereof.

[0120] The semiconductor nanoparticles may have a relative molar value of zinc of greater than or equal to about 0.05, greater than or equal to about 0.08, and less than or equal to about 0.9 as defined by the following equation:

[0121] Relative molar value of zinc = [Zn] / ([Ag]+[In]+[Ga]+[Zn])

[0122] Among them, in the equation,

[0123] [Ag], [In], [Ga], and [Zn] are the molar amounts of silver, indium, gallium, and zinc in the semiconductor nanoparticles, respectively.

[0124] In the semiconductor nanoparticles, the relative molar value of zinc can be greater than or equal to about 0.1, greater than or equal to about 0.15, greater than or equal to about 0.2, greater than or equal to about 0.25, greater than or equal to about 0.26, greater than or equal to about 0.265, greater than or equal to about 0.27, greater than or equal to about 0.275, greater than or equal to about 0.28, greater than or equal to about 0.285, greater than or equal to about 0.29, greater than or equal to about 0.295, greater than or equal to about 0.3, greater than or equal to about 0.31, greater than or equal to about 0.32, greater than or equal to about 0.33, greater than or equal to about 0.34, greater than or equal to about 0.35, greater than or equal to about 0.36, greater than or equal to about 0.37, greater than or equal to about 0.38, greater than or equal to about 0.39, greater than or equal to about 0.40, greater than or equal to about 0.41, greater than or equal to about 0.42, greater than or equal to about 0.43, greater than or equal to about 0.44, greater than or equal to about 0.45, greater than or equal to about 0.46, greater than or equal to about 0.47, greater than or equal to about 0.48, greater than or equal to about 0.49, greater than or equal to about 0.50, greater than or equal to about 0.51, greater than or equal to about 0.52, greater than or equal to about 0.53, greater than or equal to about 0.54, greater than or equal to about 0.55, greater than or equal to about 0.56. about 0.34, about 0.35, about 0.36, about 0.37, about 0.38, or about 0.39; about 0.85, about 0.8, about 0.75, about 0.7, about 0.65, about 0.6, about 0.55, about 0.5, about 0.49, about 0.48, about 0.48, about 0.475, about 0.5, about 0.6, about 0.75, about 0.7 ... 0.75, 0.75, 0.75, 0.75, 0.75 0.47, less than or equal to about 0.465, less than or equal to about 0.46, less than or equal to about 0.455, less than or equal to about 0.45, less than or equal to about 0.445, less than or equal to about 0.44, less than or equal to about 0.435, less than or equal to about 0.43, less than or equal to about 0.425, less than or equal to about 0.42, less than or equal to about 0.415, less than or equal to about 0.41, less than or equal to about 0.405, less than or equal to about 0.4, less than or equal to about 0.395, less than or equal to about 0.39, less than or equal to about 0.385, less than or equal to about 0.38, less than or equal to about 0.375, less than or equal to about 0.37, less than or equal to about 0.365, less than or equal to about 0.36, less than or equal to about 0.355, less than or equal to about 0.35, less than or equal to about 0.345, less than or equal to about 0.34, less than or equal to about 0.335, less than or equal to about 0.33, less than or equal to about 0.325, less than or equal to about 0.32, less than or equal to about 0.315, less than or equal to about 0.31, less than or equal to about 0.305, or less than or equal to about 0.3; or a combination thereof.

[0125] In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be greater than or equal to about 2.5:1, greater than or equal to about 2.6:1, greater than or equal to about 2.7:1, greater than or equal to about 2.8:1, greater than or equal to about 2.9:1, greater than or equal to about 3:1, greater than or equal to about 3.1:1, greater than or equal to about 3.3:1, greater than or equal to about 3.4:1, greater than or equal to about 3.5:1, greater than or equal to about 3.6:1, greater than or equal to about 3.7:1, greater than or equal to about 3.8:1, greater than or equal to about 3.9:1, greater than or equal to about 4:1, greater than or equal to about 4.1:1, greater than or equal to about 4.2:1, greater than or equal to about 4.3:1, greater than or equal to about 4.4:1, greater than or equal to about 4.5:1, greater than or equal to about 4.6:1, greater than or equal to about 4.7:1, greater than or equal to about 4.8:1, greater than or equal to about 4.9:1, greater than or equal to about 5.1:1, greater than or equal to about 5. less than or equal to about 4.6:1, or greater than or equal to about 4.7:1; less than or equal to about 10:1, less than or equal to about 9:1, less than or equal to about 8:1, less than or equal to about 7:1, less than or equal to about 6:1, less than or equal to about 5.5:1, less than or equal to about 5.3:1, less than or equal to about 5.1:1, less than or equal to about 5:1, less than or equal to about 4.9:1, less than or equal to about 4.7:1, less than or equal to about 4.5:1, less than or equal to about 4.3:1, less than or equal to about 4:1, less than or equal to about 4.1:1, less than or equal to about 4:1, less than or equal to about 3.9:1, less than or equal to about 3.8:1, less than or equal to about 3.7:1, less than or equal to about 3.6:1, or less than or equal to about 3.55:1; or combinations thereof.

[0126] In the semiconductor nanoparticles, the molar ratio of silver to indium (Ag:In) can be greater than or equal to about 1.5:1, greater than or equal to about 2:1, greater than or equal to about 2.25:1, greater than or equal to about 2.3:1, greater than or equal to about 2.35:1, greater than or equal to about 2.4:1, greater than or equal to about 2.5:1, greater than or equal to about 2.6:1, greater than or equal to about 2.7:1, greater than or equal to about 2.9:1, greater than or equal to about 3:1, or greater than or equal to about 3.1:1; less than or equal to about 5:1, less than or equal to about 4.5:1, less than or equal to about 4:1, less than or equal to about 3.9:1, less than or equal to about 3.8:1, less than or equal to about 3.7:1, or less than or equal to about 3.6:1; or combinations thereof.

[0127] In the semiconductor nanoparticles, the molar ratio of sulfur to indium (S:In) may be greater than or equal to about 7:1, greater than or equal to about 7.5:1, greater than or equal to about 8:1, greater than or equal to about 8.5:1, greater than or equal to about 9:1, greater than or equal to about 9.3:1, greater than or equal to about 9.4:1, greater than or equal to about 9.8:1, or greater than or equal to about 10:1; less than or equal to about 25:1, less than or equal to about 20:1, less than or equal to about 19:1, less than or equal to about 18:1, or less than or equal to about 11:1; or combinations thereof. In the semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) may be greater than or equal to about 0.2:1 and less than or equal to about 0.5:1.

[0128] By having the structure / composition described herein, the semiconductor nanoparticles can emit light of a desired wavelength and can achieve improved optical properties (e.g., narrow half-maximum full width, improved quantum yield, and / or relatively high level of blue light absorptivity). When the semiconductor nanoparticles of the embodiments are placed in the air for a predetermined time (e.g., about 48 or 72 hours), they can also exhibit improved stability (chemical stability and / or thermal stability), and the composite including the semiconductor nanoparticles can exhibit a relatively high level of luminescent properties compared to their initial values. The semiconductor nanoparticles of the embodiments can be used, for example, as down-conversion materials for color conversion panels or color conversion sheets, and can exhibit increased absorptivity per weight of semiconductor nanoparticles, so that devices including them (e.g., panels or sheets) can be manufactured at reduced production costs and can provide improved light conversion performance. In an embodiment, the semiconductor nanoparticles can exhibit reduced or suppressed emission (e.g., trap emission) in an unwanted wavelength range.

[0129] The inventors have found that in the case of semiconductor nanoparticles including Group 13 metals and chalcogens and silver (Ag), the desired luminescent properties (e.g., improved quantum yield and reduced half-maximum full width) may not be easily achieved. In addition, the inventors have found that adjusting the composition of semiconductor nanoparticles based on Group 11-13-16 compounds (e.g., charge balance value and / or molar ratio between components) can contribute to the improvement of the optical properties of the particles, but when the semiconductor nanoparticles are processed into the form of a composite, a sharp decrease or degradation of its optical properties occurs. When the semiconductor nanoparticles are used for a color conversion layer containing pixels (e.g., red pixels and / or green pixels) configured to emit light of different colors, respectively, a relatively large amount of blue light will be incident on a relatively narrow area, and this will also cause photobleaching of the semiconductor nanoparticles or may cause degradation of the components of the composite. In order to apply semiconductor nanoparticles to actual devices, it may involve the manufacture of a composite including semiconductor nanoparticles dispersed in a matrix (e.g., a polymer), which may involve a process of mixing the semiconductor nanoparticles with an organic material (such as a polymer) and thermally / photocuring them. The inventors have found that in the process of making such a composite, semiconductor nanoparticles including 11-13-16 group compounds can show rapid efficiency reduction, and even in the state of being made into a composite, for example, when placed in air, can show significant efficiency reduction. The semiconductor nanoparticles of the embodiments can be made according to the methods described herein and can have the structures and / or characteristics described herein, thereby achieving improved stability and contributing to the improvement of device reliability.

[0130] In the semiconductor nanoparticles, the molar ratio of gallium to the sum of indium and gallium [Ga:(In+Ga)] may be greater than or equal to about 0.7:1, greater than or equal to about 0.71:1, greater than or equal to about 0.715:1, greater than or equal to about 0.72:1, greater than or equal to about 0.725:1, greater than or equal to about 0.73:1, greater than or equal to about 0.735:1, greater than or equal to about 0.74:1, greater than or equal to about 0.745:1, greater than or equal to about 0.75:1, greater than or equal to about 0.755:1, greater than or equal to about 0.76:1, greater than or equal to about 0.765:1, greater than or equal to about 0.77:1, greater than or equal to about 0.775:1, greater than or equal to about 0.78:1, greater than or equal to about 0.785:1, greater than or equal to about 0.79:1, greater than or equal to about 0.795:1, greater than or equal to about 0.8:1, about 0.805:1 or more, about 0.81:1 or more, about 0.815:1 or more, about 0.82:1 or more, or about 0.825:1 or more; about 0.845:1 or less, about 0.84:1 or less, about 0.835:1 or less, about 0.83:1 or less, about 0.825:1 or less, or about 0.845:1 or less. about 0.82:1, less than or equal to about 0.815:1, less than or equal to about 0.81:1, less than or equal to about 0.805:1, less than or equal to about 0.8:1, less than or equal to about 0.795:1, less than or equal to about 0.79:1, less than or equal to about 0.785:1, less than or equal to about 0.78:1, less than or equal to about 0.775:1, or less than or equal to about 0.77:1; or combinations thereof.

[0131] In the semiconductor nanoparticles, the molar ratio of gallium to silver (Ga:Ag) may be greater than or equal to about 1:1, greater than or equal to about 1.1:1, greater than or equal to about 1.13:1, greater than or equal to about 1.18:1, greater than or equal to about 1.2:1, greater than or equal to about 1.25:1, greater than or equal to about 1.3:1, greater than or equal to about 1.34:1, greater than or equal to about 1.4:1, greater than or equal to about 1.45:1, greater than or equal to about 1.5:1, greater than or equal to about 1.54:1, greater than or equal to about 1.6:1, or greater than or equal to about 1.65:1; less than or equal to about 3:1, less than or equal to about 2.8:1, less than or equal to about 2.75:1, less than or equal to about 2.5:1, less than or equal to about 2.2:1, less than or equal to about 2:1, less than or equal to about 1.9:1, less than or equal to about 1.8:1, less than or equal to about 1.75:1, less than or equal to about 1.7:1, less than or equal to about 1.65:1, less than or equal to about 1.6:1, less than or equal to about 1.55:1, less than or equal to about 1.5:1, less than or equal to about 1.45:1, less than or equal to about 1.4:1, or less than or equal to about 1.35:1; or combinations thereof.

[0132] In the semiconductor nanoparticles, the molar ratio of zinc to gallium (Zn:Ga) may be greater than or equal to about 0.1:1, greater than or equal to about 0.15:1, greater than or equal to about 0.2:1, greater than or equal to about 0.25:1, greater than or equal to about 0.3:1, greater than or equal to about 0.35:1, greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.5:1, greater than or equal to about 0.55:1, or greater than or equal to about 0.5:1. less than or equal to about 0.65:1; less than or equal to about 2:1, less than or equal to about 1.6:1, less than or equal to about 1.55:1, less than or equal to about 1.45:1, less than or equal to about 1.3:1, less than or equal to about 1.2:1, less than or equal to about 1.1:1, less than or equal to about 1:1, less than or equal to about 0.9:1, less than or equal to about 0.8:1, less than or equal to about 0.7:1, or less than or equal to about 0.6:1; or combinations thereof.

[0133] In the semiconductor nanoparticles, the molar ratio of gallium to the sum of gallium, indium, and silver (Ga:(Ga+In+Ag)) may be greater than or equal to about 0.3:1, greater than or equal to about 0.35:1, greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.46:1, greater than or equal to about 0.47:1, greater than or equal to about 0.48:1, greater than or equal to about 0.49:1, greater than or equal to about 0.5:1, greater than or equal to about 0.51:1, or greater than or equal to about 0.5:1. less than or equal to about 0.53:1; less than or equal to about 0.8:1, less than or equal to about 0.7:1, less than or equal to about 0.65:1, less than or equal to about 0.6:1, less than or equal to about 0.57:1, less than or equal to about 0.54:1, less than or equal to about 0.53:1, less than or equal to about 0.52:1, less than or equal to about 0.51:1, less than or equal to about 0.5:1, less than or equal to about 0.49:1, or less than or equal to about 0.485:1; or combinations thereof.

[0134] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to sulfur ((In+Ga):S) may be greater than or equal to about 0.2:1, greater than or equal to about 0.25:1, greater than or equal to about 0.3:1, greater than or equal to about 0.33:1, greater than or equal to about 0.35:1, greater than or equal to about 0.4:1, greater than or equal to about 0.41:1, greater than or equal to about 0.43:1, greater than or equal to about 0.45:1, greater than or equal to about 0.46:1 , greater than or equal to about 0.47:1, greater than or equal to about 0.5:1, greater than or equal to about 0.54:1, or greater than or equal to about 0.58:1; less than or equal to about 0.8:1, less than or equal to about 0.6:1, less than or equal to about 0.59:1, less than or equal to about 0.55:1, less than or equal to about 0.52:1, less than or equal to about 0.51:1, less than or equal to about 0.5:1, or less than or equal to about 0.48:1; or combinations thereof.

[0135] In the semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) can be greater than or equal to about 0.1:1, greater than or equal to about 0.15:1, greater than or equal to about 0.2:1, greater than or equal to about 0.21:1, greater than or equal to about 0.23:1, greater than or equal to about 0.24:1, greater than or equal to about 0.25:1, greater than or equal to about 0.28:1, greater than or equal to about 0.3:1, or greater than or equal to about 0.35:1; less than or equal to about 0.6:1, less than or equal to about 0.5:1, less than or equal to about 0.45:1, less than or equal to about 0.4:1, less than or equal to about 0.36:1, or less than or equal to about 0.33:1; or combinations thereof.

[0136] In the semiconductor nanoparticles, the molar ratio of silver to the sum of silver, indium, and gallium ([Ag:(Ag+In+Ga)]) can be greater than or equal to about 0.1:1, greater than or equal to about 0.15:1, greater than or equal to about 0.2:1, greater than or equal to about 0.25:1, greater than or equal to about 0.3:1, greater than or equal to about 0.33:1, greater than or equal to about 0.34:1, greater than or equal to about 0.35:1, greater than or equal to about 0.37:1, or greater than or equal to about 0.4:1; less than or equal to about 0.55:1, less than or equal to about 0.5:1, less than or equal to about 0.4:1, less than or equal to about 0.36:1, less than or equal to about 0.33:1, less than or equal to about 0.32:1, or less than or equal to about 0.28:1; or combinations thereof.

[0137] In the semiconductor nanoparticles, the molar ratio of sulfur to the sum of silver, indium, and gallium ([S:(Ag+In+Ga)]) may be greater than or equal to about 0.9:1, greater than or equal to about 1:1, greater than or equal to about 1.05:1, greater than or equal to about 1.18:1, greater than or equal to about 1.2:1, greater than or equal to about 1.28:1, greater than or equal to about 1.45:1, greater than or equal to about 1.46:1, greater than or equal to about 1.5:1, or greater than or equal to about 1.7:1; less than or equal to about 1. about 2.8:1, less than or equal to about 2.7:1, less than or equal to about 2.6:1, less than or equal to about 2.5:1, less than or equal to about 2.3:1, less than or equal to about 2.1:1, less than or equal to about 2:1, less than or equal to about 1.9:1, less than or equal to about 1.7:1, less than or equal to about 1.55:1, less than or equal to about 1.51:1, less than or equal to about 1.45:1, less than or equal to about 1.35:1, or less than or equal to about 1.15:1; or combinations thereof.

[0138] In the semiconductor nanoparticles, the molar ratio of sulfur to the sum of silver, indium, gallium and zinc ([S:(Ag+In+Ga+Zn)]) can be greater than or equal to about 0.69:1, greater than or equal to about 0.7:1, greater than or equal to about 0.84:1, greater than or equal to about 0.9:1, greater than or equal to about 0.98:1, greater than or equal to about 1:1, greater than or equal to about 1.05:1, greater than or equal to about 1.09:1, or greater than or equal to about 1.1:1; less than or equal to about 1.3:1, less than or equal to about 1.27:1, less than or equal to about 1.26:1, less than or equal to about 1.25:1, less than or equal to about 1.24:1, less than or equal to about 1.21:1, less than or equal to about 1.2:1, less than or equal to about 1.16:1, or less than or equal to about 1.1:1; or combinations thereof.

[0139] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to silver ([(In+Ga):Ag]) can be greater than or equal to about 1.4:1, greater than or equal to about 1.45:1, greater than or equal to about 1.48:1, greater than or equal to about 1.5:1, greater than or equal to about 1.63:1, greater than or equal to about 1.7:1, or greater than or equal to about 1.8:1; less than or equal to about 3.7:1, less than or equal to about 2.4:1, less than or equal to about 2.37:1, less than or equal to about 2:1, less than or equal to about 1.9:1, or less than or equal to about 1.85:1; or combinations thereof.

[0140] In an embodiment, the semiconductor nanoparticles may have a charge balance value represented by the following equation, the charge balance value being greater than or equal to about 0.8, greater than or equal to about 0.85, greater than or equal to about 0.9, greater than or equal to about 0.91, greater than or equal to about 0.92, greater than or equal to about 0.93, greater than or equal to about 0.95, greater than or equal to about 0.98, or greater than or equal to about 0.99; less than or equal to about 1.4, less than or equal to about 1.35, less than or equal to about 1.3, less than or equal to about 1.25, less than or equal to about 1.2, less than or equal to about 1.18, less than or equal to about 1.17, less than or equal to about 1.15, less than or equal to about 1.1, less than or equal to about 1.05, or less than or equal to about 1; or a combination thereof:

[0141] Charge balance value = {[Ag] + 3 × ([In] + [Ga]) + 2 [Zn]} / (2 × [S])

[0142] Wherein, in the equation, [Ag], [In], [Ga], [Zn], and [S] are the molar amounts of silver, indium, gallium, zinc, and sulfur in the semiconductor nanoparticles, respectively.

[0143] The first particle (eg, a particle including the first semiconductor nanocrystal and the third semiconductor nanocrystal) can have a charge balance value of 0.8 to 1.3, 0.9 to 1.2, 1 to 1.1, or a combination thereof.

[0144] The size or average size (hereinafter, may be simply referred to as "size") of the first semiconductor nanocrystals or first particles may be greater than or equal to about 0.5 nm, greater than or equal to about 1 nm, greater than or equal to about 1.5 nm, greater than or equal to about 1.7 nm, greater than or equal to about 1.9 nm, greater than or equal to about 2 nm, greater than or equal to about 2.1 nm, greater than or equal to about 2.3 nm, greater than or equal to about 2.5 nm, greater than or equal to about 2.7 nm, greater than or equal to about 2.9 nm, greater than or equal to about 3 nm, greater than or equal to about 3.1 nm, greater than or equal to about 3.3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 3.7 nm, greater than or equal to about 3.9 nm, greater than or equal to about 4 nm, or greater than or equal to about 4.2 nm. The size of the first semiconductor nanocrystal or the first particle can be less than or equal to about 6 nm, less than or equal to about 5.5 nm, less than or equal to about 5 nm, less than or equal to about 4.5 nm, less than or equal to about 4 nm, less than or equal to about 3.5 nm, less than or equal to about 3 nm, less than or equal to about 2.5 nm, less than or equal to about 2 nm, or less than or equal to about 1.5 nm.

[0145] If present, the thickness or average thickness (hereinafter referred to as "thickness") of the third semiconductor nanocrystal or the layer including the third semiconductor nanocrystal may be greater than or equal to about 0.1 nm, greater than or equal to about 0.3 nm, greater than or equal to about 0.5 nm, greater than or equal to about 0.7 nm, greater than or equal to about 0.9 nm, greater than or equal to about 1 nm, greater than or equal to about 1.2 nm, greater than or equal to about 1.4 nm, or greater than or equal to about 1.8 nm. The thickness of the third semiconductor nanocrystal or the layer including the third semiconductor nanocrystal may be less than or equal to about 2 nm, less than or equal to about 1.5 nm, less than or equal to about 1 nm, or less than or equal to about 0.8 nm.

[0146] The thickness of the second semiconductor nanocrystal or the layer including the second semiconductor nanocrystal can be greater than or equal to about 0.1nm, greater than or equal to about 0.2nm, greater than or equal to about 0.3nm, greater than or equal to about 0.4nm, greater than or equal to about 0.5nm, greater than or equal to about 0.6nm, greater than or equal to about 0.7nm, greater than or equal to about 0.8nm, greater than or equal to about 0.9nm, greater than or equal to about 1nm, greater than or equal to about 1.1nm, greater than or equal to about 1.2nm, greater than or equal to about 1.4nm, or greater than or equal to about 1.8nm. The thickness of the second semiconductor nanocrystal or the layer including the second semiconductor nanocrystal can be less than or equal to about 3nm, less than or equal to about 2.5nm, less than or equal to about 2nm, less than or equal to about 1.5nm, less than or equal to about 1nm, or less than or equal to about 0.8nm.

[0147] The thickness of the fourth semiconductor nanocrystal or the layer including the fourth semiconductor nanocrystal can be about 0.1nm to 5nm, about 0.3nm to 4nm, about 0.5nm to 3.5nm, about 0.7nm to 3nm, about 0.9nm to 2.5nm, about 1nm to 2nm, about 1.5nm to 1.7nm, or a combination thereof.

[0148] In an embodiment, the semiconductor nanoparticles may or may not include lithium. The semiconductor nanoparticles may or may not include an alkali metal (such as sodium, potassium, etc.).

[0149] The size or average size (hereinafter referred to as "size") of the semiconductor nanoparticles may be greater than or equal to about 1 nm, greater than or equal to about 1.5 nm, greater than or equal to about 2 nm, greater than or equal to about 2.5 nm, greater than or equal to about 3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 4 nm, greater than or equal to about 4.5 nm, greater than or equal to about 5 nm, greater than or equal to about 5.5 nm, greater than or equal to about 6 nm, greater than or equal to about 6.5 nm, greater than or equal to about 7 nm, greater than or equal to about 7.5 nm, greater than or equal to about 8 nm, greater than or equal to about 8.5 nm, greater than or equal to about 9 nm, greater than or equal to about 9.5 nm, greater than or equal to about 10 nm, or greater than or equal to about 10.5 nm. The size of the semiconductor nanoparticles can be less than or equal to about 50 nm, less than or equal to about 48 nm, less than or equal to about 46 nm, less than or equal to about 44 nm, less than or equal to about 42 nm, less than or equal to about 40 nm, less than or equal to about 35 nm, less than or equal to about 30 nm, less than or equal to about 25 nm, less than or equal to about 20 nm, less than or equal to about 18 nm, less than or equal to about 16 nm, less than or equal to about 14 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 6 nm, or less than or equal to about 4 nm.

[0150] As used herein, the size of semiconductor nanoparticles can be a particle size (particle diameter). The size of semiconductor nanoparticles can be an equivalent diameter of semiconductor nanoparticles obtained by calculation, and the calculation involves converting the two-dimensional area of ​​the transmission electron microscope image of a given particle into a circle. The particle size can be a value (e.g., nominal particle size) calculated from the composition and peak emission wavelength of the semiconductor nanoparticles.

[0151] The peak emission wavelength of green light or the peak emission wavelength of the semiconductor nanoparticles may be greater than or equal to about 500 nm, greater than or equal to about 505 nm, greater than or equal to about 510 nm, greater than or equal to about 515 nm, greater than or equal to about 520 nm, greater than or equal to about 525 nm, greater than or equal to about 530 nm, greater than or equal to about 535 nm, greater than or equal to about 540 nm, or greater than or equal to about 545 nm. The peak emission wavelength of green light or the peak emission wavelength of semiconductor nanoparticles can be less than or equal to about 580nm, less than or equal to about 575nm, less than or equal to about 570nm, less than or equal to about 565nm, less than or equal to about 560nm, less than or equal to about 555nm, less than or equal to about 550nm, less than or equal to about 545nm, less than or equal to about 540nm, less than or equal to about 535nm, less than or equal to about 530nm, less than or equal to about 525nm, less than or equal to about 520nm, or less than or equal to about 515nm.

[0152] The semiconductor nanoparticles may exhibit a quantum yield of greater than or equal to about 50%. The quantum yield may be an absolute quantum yield. The quantum yield may be greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, greater than or equal to about 70%, greater than or equal to about 75%, greater than or equal to about 80%, greater than or equal to about 85%, greater than or equal to about 90%, or greater than or equal to about 95%. The quantum yield may be less than or equal to about 100%, less than or equal to about 99.5%, less than or equal to about 99%, less than or equal to about 98%, or less than or equal to about 97%.

[0153] The full width at half maximum (FWHM) of the first light (e.g., green light or red light) or the FWHM of the semiconductor nanoparticles may be greater than or equal to about 5 nm, greater than or equal to about 10 nm, greater than or equal to about 15 nm, greater than or equal to about 20 nm, greater than or equal to about 25 nm, or greater than or equal to about 30 nm. The full width at half maximum of the first light (e.g., green light or red light) or the FWHM of the semiconductor nanoparticles may be less than or equal to about 90 nm, less than or equal to about 85 nm, less than or equal to about 80 nm, less than or equal to about 75 nm, less than or equal to about 70 nm, less than or equal to about 65 nm, less than or equal to about 60 nm, less than or equal to about 55 nm, less than or equal to about 50 nm, or less than or equal to about 45 nm. Less than or equal to about 40 nm, less than or equal to about 38 nm, less than or equal to about 36 nm, less than or equal to about 35 nm, less than or equal to about 34 nm, less than or equal to about 33 nm, less than or equal to about 32 nm, less than or equal to about 31 nm, less than or equal to about 30 nm, less than or equal to about 29 nm, less than or equal to about 28 nm, less than or equal to about 27 nm, less than or equal to about 26 nm, or less than or equal to about 25 nm.

[0154] In an embodiment, the third semiconductor nanocrystal and / or the fourth semiconductor nanocrystal (or a semiconductor nanocrystal layer including it) can contribute to improving the stability of semiconductor nanoparticles. The first particle based on 11-13-16 family compounds can show relatively improved luminous efficiency and narrow half-maximum full width. However, the inventors have found that the luminous properties of the first particle can be rapidly reduced during the process of, for example, manufacturing a composite, and even when it is exposed to an external environment (for example, in the atmosphere) in the form of a composite, it is difficult to avoid further reduction in luminous properties. The semiconductor nanoparticles according to an embodiment can show, for example, an improved process maintenance rate in terms of luminous efficiency during the composite manufacturing process, and the composite manufactured can show improved stability to the external environment.

[0155] The inventors have also found that forming a semiconductor nanocrystal layer based on zinc sulfide on a first particle containing a compound of group 11-13-16 will inevitably have an adverse effect on the luminescent properties of the first particle. The inventors have found that when a semiconductor nanocrystal layer including zinc sulfide (e.g., ZnS) is formed by the reaction of zinc and sulfide elements according to the prior art, the ratio (e.g., percentage) of trap emission (i.e., emission peak area above the maximum emission peak wavelength + 50nm) in the emission peak of the final particle will increase significantly. Without wishing to be bound by any theory, it is believed that it may be difficult to form a semiconductor nanocrystal based on zinc sulfide on a first particle based on AgInGaAs, or that zinc ions may cause a composition change (e.g., a reduction in gallium) of the first particle, resulting in an increase in trap emission in the final semiconductor nanoparticle. The semiconductor nanoparticles of the embodiments may have the structure described herein and may exhibit improved stability and significantly suppressed trap emission.

[0156] In an embodiment, the green light may include band-edge emission. In an embodiment, the light emitted by the semiconductor nanoparticles may further include defect site emission or well emission.

[0157] In the photoluminescence spectrum of the semiconductor nanoparticle, the percentage of trap emission relative to the total emission peak area (A) of the emission spectrum (e.g., the emission peak portion or region above the peak emission wavelength + 50 nm of the emission spectrum) may be less than or equal to about 25%, less than or equal to about 24%, less than or equal to about 23%, less than or equal to about 22%, less than or equal to about 21%, less than or equal to about 20%, less than or equal to about 15%, less than or equal to about 12%, less than or equal to about 10%, less than or equal to about 9%, less than or equal to about 8%, less than or equal to about 7%, less than or equal to about 6%, less than or equal to about 5%, less than or equal to about 4%, less than or equal to about 3%, or less than or equal to about 2%:

[0158] Trap emission percentage (%) = [Trap / A] × 100

[0159] In the above equation, Trap is the area of ​​the trap emission in the spectrum

[0160] A is the total area of ​​the emission spectrum (see Figure 1C )

[0161] The trap emission percentage can be greater than or equal to 0%, greater than or equal to about 0.1%, greater than or equal to about 1%, greater than or equal to about 5%, greater than or equal to about 6.5%, greater than or equal to about 7.5%, greater than or equal to about 8.5%, greater than or equal to about 9.5%, greater than or equal to about 10.5%, greater than or equal to about 13%, greater than or equal to about 16%, or greater than or equal to about 17%.

[0162] The inventors have found that placing a zinc sulfide-based semiconductor nanocrystal layer on semiconductor nanoparticles based on Group 13-16 compounds increases the trap emission of the final particles. However, by having the structure / composition described herein, the semiconductor nanoparticles of the embodiments can exhibit improved stability and an emission spectrum in which trap emission is substantially suppressed or removed.

[0163] The method of manufacturing semiconductor nanoparticles includes forming a second semiconductor nanocrystal (or a semiconductor nanocrystal layer including it) by the following method: in the presence of a first semiconductor nanocrystal or particle (e.g., a first particle comprising indium, gallium, silver and sulfur), a zinc precursor, a gallium precursor and a sulfur precursor are contacted or combined in a reaction medium (e.g., including an organic solvent) and the reaction medium is heated to a reaction temperature to react, thereby forming a second semiconductor nanocrystal. The second semiconductor nanocrystal may include zinc gallium sulfide (ZnGaS).

[0164] In an embodiment, contacting or combining may include adding the first semiconductor nanocrystal (or first particle), the zinc precursor (and optionally the sulfur precursor) to a reaction medium including an organic solvent. The reaction medium may also include a sulfur precursor. The reaction may be carried out at a temperature greater than about 140° C., greater than or equal to about 180° C., and less than about 240° C.

[0165] Details of the semiconductor nanoparticles and the first particles are the same as described herein.

[0166] Prior to adding the first particles and / or the zinc precursor, the reaction medium can be heated to a predetermined temperature under vacuum, for example, to a temperature greater than or equal to about 80°C, greater than or equal to about 100°C, or greater than or equal to about 120°C and less than or equal to about 200°C, or less than or equal to about 180°C.

[0167] The reaction temperature may be greater than or equal to about 145° C., greater than or equal to about 150° C., greater than or equal to about 155° C., greater than or equal to about 160° C., greater than or equal to about 165° C., greater than or equal to about 170° C., greater than or equal to about 175° C., greater than or equal to about 185° C., greater than or equal to about 190° C., greater than or equal to about 195° C., greater than or equal to about 200° C., greater than or equal to about 205° C., or greater than or equal to about 208° C. and less than or equal to about 225° C., or less than or equal to about 215° C. The reaction time may be 10 minutes or more, 30 minutes or more, 40 minutes or more, 1 hour or more, 80 minutes or more, or 90 minutes or more and 4 hours or less, 3 hours or less, 2 hours or less, 90 minutes or less, or 70 minutes or less.

[0168] Methods of adding the first particles and / or zinc precursor to the (eg, heated) reaction medium for forming a semiconductor nanocrystal layer (eg, including zinc chalcogenide) may include injection addition (eg, syringe addition), dropwise addition, or a combination thereof.

[0169] According to the method of the embodiment, a semiconductor nanocrystal layer containing zinc, gallium and sulfur (or zinc gallium sulfide) can be formed on a first particle containing a Group 11-13-16 compound, and the resulting semiconductor nanoparticles can achieve stability and improved luminescence properties (e.g., narrow half-maximum full width, improved QY and / or suppressed trap emission).

[0170] In an embodiment, the preparation of the first particle may involve a method comprising: preparing a reaction medium comprising a first precursor (and optionally an organic ligand) in an organic solvent; heating the reaction medium to a first temperature; adding a first semiconductor nanocrystal and a second precursor to the reaction medium to obtain a reaction mixture, wherein one of the first precursor and the second precursor is a gallium precursor and the other is a sulfur precursor; and heating the reaction medium to a second temperature and reacting for a first time to form a first particle comprising a third semiconductor nanocrystal.

[0171] The first temperature may be greater than or equal to about 120° C. (e.g., greater than or equal to about 180° C., greater than or equal to about 190° C., or greater than or equal to about 200° C.) and 280° C. or less (e.g., 250° C. or less). The second temperature may be greater than or equal to about 190° C., or greater than or equal to about 240° C. and less than or equal to about 380° C., or less than or equal to about 280° C. The first time may be controlled so that the first particles can obtain the charge balance value described herein.

[0172] The details of the first semiconductor nanocrystal, the third semiconductor nanocrystal, and the charge balance value are the same as described herein. The first temperature and the second temperature may be different. The second temperature may be higher than the first temperature.

[0173] In one or more embodiments, the first precursor may be a sulfur precursor, and the second precursor may be a gallium precursor. According to the method of one or more embodiments, oxidation of the gallium precursor may be effectively suppressed.

[0174] In an embodiment, the prepared first particles can be separated and optionally washed. The separation and washing can be performed as described herein.

[0175] Detailed description about the first semiconductor nanocrystal is as described herein.The first semiconductor nanocrystal may include silver (Ag), indium, gallium and sulfur.The method for preparing the first semiconductor nanocrystal is not particularly limited and may be appropriately selected.In one or more embodiments, the first semiconductor nanocrystal may be obtained by reacting a desired precursor (such as a silver precursor, an indium precursor, a gallium precursor and a sulfur precursor) and separating it in a solution including an organic ligand and an organic solvent at a predetermined reaction temperature (e.g., about 180°C to about 300°C or about 200°C to about 280°C) according to the composition.For separation and recovery, the method described herein may be referred to.

[0176] The second temperature may be higher than the first temperature. The difference between the first temperature and the second temperature may be greater than or equal to about 10°C, greater than or equal to about 20°C, greater than or equal to about 30°C, greater than or equal to about 40°C, greater than or equal to about 50°C, greater than or equal to about 60°C, greater than or equal to about 70°C, greater than or equal to about 80°C, greater than or equal to about 90°C, or greater than or equal to about 100°C. The difference between the first temperature and the second temperature may be less than or equal to about 200°C, less than or equal to about 190°C, less than or equal to about 180°C, less than or equal to about 170°C, less than or equal to about 160°C, less than or equal to about 150°C, less than or equal to about 140°C, less than or equal to about 130°C, less than or equal to about 120°C, less than or equal to about 110°C, less than or equal to about 100°C, less than or equal to about 90°C. Less than or equal to about 80°C, less than or equal to about 70°C, less than or equal to about 60°C, less than or equal to about 50°C, less than or equal to about 40°C, less than or equal to about 30°C, or less than or equal to about 20°C.

[0177] The first temperature may be greater than or equal to about 120° C., greater than or equal to about 190° C., greater than or equal to about 200° C., greater than or equal to about 210° C., greater than or equal to about 220° C., greater than or equal to about 230° C., greater than or equal to about 240° C., or greater than or equal to about 250° C. The first temperature may be less than or equal to about 280° C., less than or equal to about 275° C., less than or equal to about 270° C., less than or equal to about 265° C., less than or equal to about 260° C., less than or equal to about 255° C., less than or equal to about 250° C., less than or equal to about 240° C., less than or equal to about 230° C., less than or equal to about 220° C., less than or equal to about 210° C., less than or equal to about 200° C., less than or equal to about 190° C., less than or equal to about 180° C., less than or equal to about 170° C., less than or equal to about 160° C., or less than or equal to about 150° C.

[0178] The second temperature may be greater than or equal to about 240° C., greater than or equal to about 245° C., greater than or equal to about 250° C., greater than or equal to about 255° C., greater than or equal to about 260° C., greater than or equal to about 265° C., greater than or equal to about 270° C., greater than or equal to about 275° C., greater than or equal to about 280° C., greater than or equal to about 285° C., greater than or equal to about 290° C., greater than or equal to about 295° C., greater than or equal to about 300° C., greater than or equal to about 305° C., greater than or equal to about 310° C., greater than or equal to about 315° C., greater than or equal to about 320° C., greater than or equal to about 330° C., greater than or equal to about 335° C., greater than or equal to about 340° C., or greater than or equal to about 345° C. The second temperature may be less than or equal to about 380°C, less than or equal to about 375°C, less than or equal to about 370°C, less than or equal to about 365°C, less than or equal to about 360°C, less than or equal to about 355°C, less than or equal to about 350°C, less than or equal to about 340°C, less than or equal to about 330°C, less than or equal to about 320°C, less than or equal to about 310°C, less than or equal to about 300°C, less than or equal to about 290°C, less than or equal to about 280°C, less than or equal to about 270°C, less than or equal to about 260°C, or less than or equal to about 250°C.

[0179] The first reaction time can be controlled to obtain a charge balance value for the first particle. The inventors have found that by controlling the first temperature and the second temperature in the aforementioned reaction and the first reaction time, the generation of side reaction products (e.g., gallium oxide) can be effectively suppressed during the formation of semiconductor nanoparticles, and thereby the first particles can have the charge balance value described herein (optionally, together with the molar ratio between the components described herein), which can help achieve the properties of the semiconductor nanoparticles as described herein.

[0180] In one or more embodiments, the first reaction time can be about 10 minutes to about 3 hours, about 20 minutes to about 150 minutes, about 30 minutes to about 100 minutes or a combination thereof. The first reaction time can be selected considering the type of precursor, the reaction temperature, the desired composition of the final particles, etc. In one or more embodiments, the second reaction temperature can be in a relatively high temperature range (e.g., greater than or equal to about 280°C, about 285°C to about 340°C, or about 290°C to about 330°C), and the first reaction time can be greater than or equal to about 10 minutes, greater than or equal to about 15 minutes, greater than or equal to about 20 minutes, or greater than or equal to about 25 minutes and less than or equal to about 2 hours, less than or equal to about 90 minutes, less than or equal to about 80 minutes, less than or equal to about 70 minutes, less than or equal to about 60 minutes, less than or equal to about 50 minutes, less than or equal to about 45 minutes, less than or equal to about 40 minutes, or less than or equal to about 35 minutes. In one or more embodiments, the second reaction temperature can be within a relatively low temperature range (e.g., less than about 290° C.), and the first reaction time can be greater than or equal to about 30 minutes, greater than or equal to about 35 minutes, greater than or equal to about 40 minutes, greater than or equal to about 45 minutes, greater than or equal to about 50 minutes, greater than or equal to about 55 minutes, greater than or equal to about 60 minutes, greater than or equal to about 65 minutes, greater than or equal to about 70 minutes, greater than or equal to about 75 minutes, or greater than or equal to about 80 minutes.

[0181] The type of silver precursor is not particularly limited and can be appropriately selected. The silver precursor may include silver powder, alkylated silver compounds, silver alcohols, silver carboxylates, silver acetylacetonate, silver nitrate, silver sulfate, silver halide, silver cyanide, silver hydroxide, silver oxide, silver peroxide, silver carbonate, or a combination thereof. The silver precursor may include silver nitrate, silver acetate, silver acetylacetonate, or a combination thereof.

[0182] The type of indium precursor is not particularly limited and can be appropriately selected. The indium precursor can include indium powder, alkylated indium compounds, indium alcohols, indium carboxylates, indium nitrates, indium perchlorates, indium sulfates, indium acetylacetonates, indium halides, indium cyanides, indium hydroxides, indium oxides, indium peroxides, indium carbonates, or combinations thereof. The indium precursor can include indium carboxylates (such as indium oleate and indium myristic acid), indium acetate, indium hydroxides, indium chlorides, indium bromides, indium iodides, or combinations thereof.

[0183] The type of gallium precursor is not particularly limited and can be appropriately selected. The gallium precursor may include gallium powder, alkylated gallium compounds, gallium alcohols, gallium carboxylates, gallium nitrates, gallium perchlorates, gallium sulfates, gallium acetylacetonates, gallium halides, gallium cyanides, gallium hydroxides, gallium oxides, gallium peroxides, gallium carbonates, or combinations thereof. The gallium precursor may include gallium chloride, gallium iodide, gallium bromide, gallium acetate, gallium acetylacetonates, gallium oleates, gallium palmitates, gallium stearates, gallium myristates, gallium hydroxides, or combinations thereof. In order to form the second semiconductor nanocrystals, the gallium precursor may include gallium halides. Gallium halides may include gallium chloride, gallium fluoride, and the like.

[0184] The type of the sulfur precursor is not particularly limited and may be appropriately selected. The sulfur precursor can be an organic solvent dispersion or a reaction product of sulfur and an organic solvent (e.g., octadecene sulfide (S-ODE), trioctylphosphine-sulfide (S-TOP), tributylphosphine-sulfide (S-TBP), triphenylphosphine-sulfide (S-TPP), trioctylamine-sulfide (S-TOA)), trimethylsilylalkyl sulfide, trimethylsilyl sulfide, mercaptopropylsilane, ammonium sulfide, sodium sulfide, C1-30 thiol compounds (e.g., α-toluene mercaptan, octanethiol, dodecanethiol, octadecene mercaptan, etc.), isothiocyanate compounds (e.g., cyclohexyl isothiocyanate, etc.), alkylene trithiocarbonates (e.g., ethylene trithiocarbonate, etc.), allyl mercaptan, thiourea compounds (e.g., dialkylthioureas having a C1 to C40 alkyl group, such as dimethylthiourea, diethylthiourea, ethylmethylthiourea, dipropylthiourea, etc.), or a combination thereof.

[0185] If present, the selenium precursor may include selenium-trioctylphosphine (Se-TOP), selenium-tributylphosphine (Se-TBP), selenium-triphenylphosphine (Se-TPP), or combinations thereof.

[0186] The type of zinc precursor is not particularly limited and can be appropriately selected. In one or more embodiments, the zinc precursor can include zn metal powder, alkylated Zn compound, alcohol Zn, carboxylic acid Zn, Zn nitrate, Zn perchlorate, Zn sulfuric acid, Zn acetylacetonate, Zn halogenation, Zn cyanide, Zn hydroxide, Zn oxidation, Zn peroxide or its combination. The zinc precursor can be dimethyl zinc, diethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate or its combination. In an embodiment, when forming the third semiconductor nanocrystal comprising zinc and sulfur or the layer comprising the third semiconductor nanocrystal, the zinc precursor can include Zn halogenation, but is not limited to this.

[0187] Organic ligands can include RCOOH, RNH 2 , R 2 NH, R3 N, RSH, RH 2 PO, R 2 HPO, R 3 PO, RH 2 P.R 2 HP, R 3 P, ROH, RCOOR', RPO(OH) 2 , RHPOOH, R 2 POOH (wherein, R and R' are independently substituted or unsubstituted C1 to C40 (or C3 to C24) aliphatic hydrocarbon groups (e.g., alkyl, alkenyl or alkynyl) or substituted or unsubstituted C6 to C40 (or C6 to C24) aromatic hydrocarbon groups (e.g., C6 to C20 aryl)) or a combination thereof. The organic ligand may be bound to the surface of the semiconductor nanoparticle. Examples of organic ligands may include: methyl mercaptan, ethyl mercaptan, propyl mercaptan, butyl mercaptan, pentyl mercaptan, hexyl mercaptan, heptyl mercaptan, octyl mercaptan, 1-nonyl mercaptan, decyl mercaptan, dodecanethiol, hexadecyl mercaptan, octadecyl mercaptan, benzyl mercaptan; methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, octadecylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine; formic acid, acetic acid, propionic acid, butyric acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid, benzoic acid; substituted or unsubstituted methyl phosphine (e.g., trimethyl phosphine, methyl diphenyl phosphine, etc.), substituted or unsubstituted ethyl phosphine (e.g., triethyl phosphine, ethyl diphenyl phosphine, etc.), substituted or unsubstituted propyl phosphine, substituted or unsubstituted butyl phosphine, substituted or unsubstituted pentyl phosphine, substituted or unsubstituted octylphosphine (e.g., trioctylphosphine (TOP) etc.); phosphine oxide, such as substituted or unsubstituted methylphosphine oxide (e.g., trimethylphosphine oxide, methyldiphenylphosphine oxide etc.), substituted or unsubstituted ethylphosphine oxide (e.g., triethylphosphine oxide, ethyldiphenylphosphine oxide etc.), substituted or unsubstituted propylphosphine oxide, substituted or unsubstituted butylphosphine oxide, substituted or unsubstituted octylphosphine oxide (e.g., trioctylphosphine oxide (TOPO) etc.); diphenylphosphine, triphenylphosphine or its oxide compound; phosphonic acid, for example, C5 to C20 alkylphosphonic acid, C5 to C20 alkylphosphinic acid (such as hexylphosphinic acid, octylphosphinic acid, dodecylphosphinic acid, tetradecylphosphinic acid, hexadecylphosphinic acid, octadecylphosphinic acid etc.); etc., but the embodiment is not limited thereto. The organic ligand can be used alone or as a mixture of two or more.

[0188] The organic solvent may include: an amine solvent (e.g., a C1 to C50 aliphatic amine), a nitrogen-containing heterocyclic compound (such as pyridine), a C6 to C40 aliphatic hydrocarbon (e.g., an alkane, an alkene, an alkyne, etc.) (such as hexadecane, octadecane, octadecene, squalene, etc.), a C6 to C30 aromatic hydrocarbon (such as phenyldodecane, phenyltetradecane, phenylhexadecane, etc.), a phosphine substituted with a C6 to C22 alkyl group (such as trioctylphosphine, etc.), a phosphine oxide substituted with a C6 to C22 alkyl group (such as trioctylphosphine oxide, etc.), a C12 to C22 aromatic ether (such as phenyl ether, benzyl ether, etc.), or a combination thereof. The amine solvent may be a compound having one or more (e.g., two or three) C1 to C50, C2 to C45, C3 to C40, C4 to C35, C5 to C30, C6 to C25, C7 to C20, C8 to C15, or C6 to C22 aliphatic hydrocarbon groups (e.g., alkyl, alkenyl, or alkynyl). In one or more embodiments, the amine solvent can be a C6 to C22 primary amine (such as hexadecylamine, oleylamine, etc.), a C6 to C22 secondary amine (such as dioctylamine, etc.), a C6 to C22 tertiary amine (such as trioctylamine, etc.), or a combination thereof.

[0189] The amount of organic ligand and precursor in the reaction medium can be appropriately selected considering the type of solvent, the type of organic ligand and each precursor and the size and composition of the desired semiconductor nanoparticles. Considering the molar ratio desired in the final semiconductor nanoparticles, the reactivity between the precursors, etc., the molar ratio between the precursors can be changed. In one or more embodiments, the mode of adding each precursor is not particularly limited. In one or more embodiments, the total amount or the total amount of precursors can be added at one time. In one or more embodiments, the total amount of precursors can be divided into greater than or equal to about 2 aliquots and less than or equal to about 10 aliquots and added. Precursors can be added simultaneously or added sequentially in a predetermined order. The reaction can be carried out in an inert gas atmosphere, in air or under a vacuum state, but is not limited thereto.

[0190] When a non-solvent is added to the final reaction solution after the reaction is completed (e.g., the organic ligand is coordinated), the nanocrystals can be separated (e.g., precipitated). The non-solvent can be a polar solvent that is miscible with the solvent used in the reaction but cannot disperse the nanocrystals. The non-solvent can be selected according to the solvent used in the reaction, and can be, for example, acetone, ethanol, butanol, isopropanol, ethylene glycol, water, tetrahydrofuran (THF), dimethyl sulfoxide (DMSO), diethyl ether, formaldehyde, acetaldehyde, a solvent with a solubility parameter similar to the aforementioned solvent, or a combination thereof. Separation can be performed by centrifugation, precipitation, chromatography or distillation. As needed, the separated nanocrystals can be washed by adding to a washing solvent. The washing solvent is not particularly limited, and a solvent with a solubility parameter similar to that of the organic solvent or ligand can be used. The non-solvent or washing solvent can be an alcohol, an alkane solvent (such as hexane, heptane, octane, etc.), an aromatic solvent (such as toluene, benzene, etc.), a halogenated solvent (such as chloroform, etc.), or a combination thereof, but is not limited thereto.

[0191] The semiconductor nanoparticles thus prepared can be dispersed in a dispersing solvent. The semiconductor nanoparticles thus prepared can form an organic solvent dispersion. The organic solvent dispersion may not include water and / or an organic solvent miscible with water. The dispersing solvent can be appropriately selected. The dispersing solvent may include the aforementioned organic solvent. The dispersing solvent may include substituted or unsubstituted C1 to C40 aliphatic hydrocarbons, substituted or unsubstituted C6 to C40 aromatic hydrocarbons, or a combination thereof.

[0192] The shape of the semiconductor nanoparticles thus prepared is not particularly limited, and may include, for example, spheres, polyhedrons, pyramids, multi-arms, cubes, nanotubes, nanowires, nanofibers, nanosheets, or combinations thereof, but is not limited thereto.

[0193] The semiconductor nanoparticles of the embodiments may include an organic ligand and / or an organic solvent on the surface of the semiconductor nanoparticles. The organic ligand and / or the organic solvent may be bound to the surface of the semiconductor nanoparticles of one or more embodiments.

[0194] In an embodiment, the composite may include: a matrix; and semiconductor nanoparticles described herein, wherein the semiconductor nanoparticles may be dispersed in the matrix. The composite may also include fine metal oxide particles. The composite may be configured to emit green light. In an embodiment, the composite may be in the form of a patterned film. The composite may also include semiconductor nanoparticles configured to emit a second light different from green light. In an embodiment, the composite may have a sheet form. The sheet may also include semiconductor nanoparticles configured to emit a second light different from green light (e.g., additional semiconductor nanoparticles).

[0195] The semiconductor nanoparticles or composites comprising semiconductor nanoparticles described herein can exhibit an increased level of blue light absorptivity (e.g., improved incident light absorptivity) and / or improved optical properties (e.g., increased luminous efficiency and narrowed half-maximum full width), and can emit light of a desired wavelength (e.g., first light).

[0196] The composite may include semiconductor nanoparticles or a group thereof (e.g., in a predetermined amount) and exhibit increased light absorptivity. The composite may have an incident light absorptivity of greater than or equal to about 70%, greater than or equal to about 73%, greater than or equal to about 75%, greater than or equal to about 77%, greater than or equal to about 80%, greater than or equal to about 83%, greater than or equal to about 85%, greater than or equal to about 87%, greater than or equal to about 90%, greater than or equal to about 93%, greater than or equal to about 94%, greater than or equal to about 95%, greater than or equal to about 96%, greater than or equal to about 97%, greater than or equal to about 98%, or greater than or equal to about 99%. The composite may have a blue light absorptivity of about 70% to about 100%, about 80% to about 98%, about 95% to about 99%, about 96% to about 98%, or a combination thereof.

[0197] The incident light absorbance can be calculated according to the following equation:

[0198] Incident light absorption rate = [(B-B') / B] × 100%

[0199] Among them, in the equation,

[0200] B is the amount of incident light provided to the composite, and

[0201] B' is the amount of incident light that passes through the composite.

[0202] The photoconversion efficiency (CE) of the composite may be greater than or equal to about 7%, greater than or equal to about 8%, greater than or equal to about 9%, greater than or equal to about 10%, greater than or equal to about 11%, greater than or equal to about 12%, greater than or equal to about 12.5%, greater than or equal to about 12.9%, greater than or equal to about 13%, greater than or equal to about 14.5%, greater than or equal to about 15%, greater than or equal to about 15.5%, greater than or equal to about 16%, greater than or equal to about 16.5%, greater than or equal to about 16.7%, or greater than or equal to about 16.9%.

[0203] The light conversion efficiency is defined by the following equation:

[0204] Photoconversion efficiency (CE, %) = [A / (B-B')] × 100%

[0205] A: The amount of first light from the composite

[0206] B: The amount of incident light provided to the composite

[0207] B': The amount of incident light that passes through the composite.

[0208] The inventors have found that luminescent nanoparticles including semiconductor nanoparticles based on 11-13-16 group compounds, when included in a composite applied to a practical device, will exhibit significantly reduced properties even if the desired level of optical properties is achieved. By having the above-mentioned compositional features and / or structural features, the semiconductor nanoparticles of the embodiment can provide a composite exhibiting improved optical properties, thereby exhibiting high optical properties even in the form of a film. The semiconductor nanoparticles of the embodiment can exhibit significantly improved stability (e.g., thermal stability and atmospheric stability).

[0209] Thus, the composites comprising the semiconductor nanoparticles of the embodiments may exhibit a process retention rate of greater than or equal to about 30%, greater than or equal to about 45%, greater than or equal to about 60%, greater than or equal to about 65%, or greater than or equal to about 70%, wherein the process retention rate is defined by the following formula:

[0210] Process retention rate = {light conversion rate in the composite film state / quantum yield in the solution state} × 2 × 100%.

[0211] The process retention rate may be approximately 30% to 99%, 68% to 95%, 70% to 85%, or a combination thereof.

[0212] In an embodiment, when kept in air (e.g., at room temperature or 20° C. to 25° C.) for 48 hours, the composite may exhibit a relative luminous efficiency (or stability) of greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, greater than or equal to about 68%, or greater than or equal to about 70%:

[0213] Relative luminous efficiency (%) = [quantum efficiency of the luminescent film or composite after 48 hours / initial quantum efficiency of the luminescent film or composite] × 100.

[0214] In an embodiment, the composite may be prepared from an ink composition. The ink composition may include a liquid carrier and a plurality of semiconductor nanoparticles of one or more embodiments. The semiconductor nanoparticles may be dispersed in the liquid carrier.

[0215] The liquid carrier may include a liquid monomer, an organic solvent or a combination thereof. The ink composition may also include a (volatile) organic solvent or may substantially exclude a (volatile) organic solvent. The ink composition may also include, for example, fine metal oxide particles (e.g., metal oxide nanoparticles) dispersed in the liquid carrier. The ink composition may also include a dispersant (for dispersing semiconductor nanoparticles and / or metal oxide nanoparticles). The dispersant may include an organic compound (monomer or polymer) containing a carboxylic acid group. The liquid carrier may not include a (e.g., volatile) organic solvent. The ink composition may be a solvent-free system. In the ink composition of an embodiment, based on the total weight of the ink composition, the amount of the organic solvent (e.g., volatile organic solvent) may be less than or equal to about 5wt%, less than or equal to about 3wt%, or less than or equal to about 1wt%. In the ink composition of an embodiment, based on the total volume of the ink composition, the amount of the organic solvent (e.g., volatile organic solvent) may be less than or equal to about 5vol%, less than or equal to about 3vol%, or less than or equal to about 1vol%.

[0216] The liquid monomer may comprise a (photo)polymerizable monomer comprising a carbon-carbon double bond. The composition may optionally further comprise a (thermal or photo)initiator. Polymerization of the composition may be initiated by light or heat.

[0217] The details of the semiconductor nanoparticles in the composition (or compound) are as described herein. Considering the desired end use (e.g., color filter, etc.), the content or amount of the semiconductor nanoparticles in the composition (or compound) can be appropriately adjusted. In one or more embodiments, based on the solid content of the composition or compound (hereinafter, the solid content can be the solid content of the composition or the solid content of the compound), the amount of semiconductor nanoparticles in the composition (or compound) can be greater than or equal to about 1wt%, for example, greater than or equal to about 2wt%, greater than or equal to about 3wt%, greater than or equal to about 4wt%, greater than or equal to about 5wt%, greater than or equal to about 6wt%, greater than or equal to about 7wt%, greater than or equal to about 8wt%, greater than or equal to about 9wt%, greater than or equal to about 10wt%, greater than or equal to about 15wt%, greater than or equal to about 20wt%, greater than or equal to about 25wt%, greater than or equal to about 30wt%, greater than or equal to about 35wt%, or greater than or equal to about 40wt%. Based on the solid content of the composition or composite, the amount of semiconductor nanoparticles can be less than or equal to about 70wt%, for example, less than or equal to about 65wt%, less than or equal to about 60wt%, less than or equal to about 55wt%, or less than or equal to about 50wt%. The weight percentage of a given component relative to the total solid content in the composition can represent the amount of a given component in the composite described herein.

[0218] In one or more embodiments, the ink composition can be a photoresist composition containing semiconductor nanoparticles suitable for photolithography. In one or more embodiments, the ink composition can be a composition containing semiconductor nanoparticles that can provide a pattern in a printing manner (e.g., a droplet discharge method such as inkjet printing). The composition according to one or more embodiments may not include a conjugated (or conductive) polymer (except for the cardo adhesive described here). The composition according to one or more embodiments may include a conjugated polymer. Here, a conjugated polymer refers to a polymer having a conjugated double bond in the main chain (e.g., polyphenylene vinylene, etc.).

[0219] In the composition according to one or more embodiments, the dispersant can ensure the dispersibility of semiconductor nanoparticles. In one or more embodiments, the dispersant can be a binder (or a binder polymer). The binder can (for example, in a repeating unit) include a carboxylic acid group. The binder can be an insulating polymer. The binder can be a compound (monomer or polymer) containing a carboxylic acid group.

[0220] In the composition (or composite), the content of the dispersant may be greater than or equal to about 0.5 wt %, for example, greater than or equal to about 1 wt %, greater than or equal to about 5 wt %, greater than or equal to about 10 wt %, greater than or equal to about 15 wt %, or greater than or equal to about 20 wt %, based on the total solid content of the composition (or composite). The content of the dispersant may be less than or equal to about 55 wt %, less than or equal to about 35 wt %, less than or equal to about 33 wt %, or less than or equal to about 30 wt %, based on the total solid content of the composition (or composite).

[0221] In the composition (or liquid carrier), the liquid monomer or polymerizable (eg, photopolymerizable) monomer including a carbon-carbon double bond (hereinafter, referred to as a monomer) may include a (eg, photopolymerizable) monomer including a (meth)acryloyl group. The monomer may be a precursor for an insulating polymer.

[0222] Based on the total weight of the composition, the content of the (photopolymerizable) monomer may be greater than or equal to about 0.5 wt%, for example, greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt%, or greater than or equal to about 10 wt%. Based on the total weight of the composition, the content of the (photopolymerizable) monomer may be less than or equal to about 30 wt%, for example, less than or equal to about 28 wt%, less than or equal to about 25 wt%, less than or equal to about 23 wt%, less than or equal to about 20 wt%, less than or equal to about 18 wt%, less than or equal to about 17 wt%, less than or equal to about 16 wt%, or less than or equal to about 15 wt%.

[0223] The (photo)initiator included in the composition can be used for the (photo)polymerization of the aforementioned monomers. An initiator is a compound that accelerates a free radical reaction (e.g., free radical polymerization of a monomer) by generating free radical chemicals under mild conditions (e.g., by heat or light). The initiator can be a thermal initiator or a photoinitiator. The initiator is not particularly limited and can be appropriately selected.

[0224] In the composition, the content of the initiator can be appropriately adjusted considering the type and content of the polymerizable monomer. In one or more embodiments, based on the gross weight (or gross weight of the solid content) of the composition, the content of the initiator can be greater than or equal to about 0.01wt% (e.g., greater than or equal to about 1wt%) and less than or equal to about 10wt% (e.g., less than or equal to about 9wt%, less than or equal to about 8wt%, less than or equal to about 7wt%, less than or equal to about 6wt%, or less than or equal to about 5wt%), but is not limited thereto.

[0225] The composition (or composite) may also include a (poly or mono)thiol compound having at least one thiol group at the end (or a moiety derived therefrom, such as a moiety produced by a reaction between a thiol and a carbon-carbon double bond, for example, a thioether group), fine metal oxide particles, or a combination thereof.

[0226] The metal oxide fine particles may include TiO 2 、SiO 2 、BaTiO 3 , Ba 2 TiO 4 , ZnO or a combination thereof. In the composition (or composite), based on the total solid content, the content of the metal oxide fine particles can be greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt%, or greater than or equal to about 10 wt% and less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 25 wt%, less than or equal to about 20 wt%, less than or equal to about 15 wt%, less than or equal to about 10 wt%, less than or equal to about 7 wt%, less than or equal to about 5 wt%, or less than or equal to about 3 wt%.

[0227] The diameter of the metal oxide fine particles is not particularly limited and can be appropriately selected. The diameter of the metal oxide fine particles can be greater than or equal to about 100 nm, for example, greater than or equal to about 150 nm, or greater than or equal to about 200 nm and less than or equal to about 1000 nm, or less than or equal to about 800 nm.

[0228] The polythiol compound can be a dithiol compound, a trithiol compound, a tetrathiol compound or a combination thereof. For example, the thiol compound can be ethylene glycol bis(3-mercaptopropionate), ethylene glycol dimercaptoacetate, trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetra(3-mercaptopropionate), pentaerythritol tetra(2-mercaptoacetate), 1,6-hexanedithiol, 1,3-propanedithiol, 1,2-ethanedithiol, polyethylene glycol dithiol comprising 1 to 10 ethylene glycol repeating units, or a combination thereof.

[0229] In the composition (or composite), the content of the thiol compound (or a moiety derived therefrom) may be less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 20 wt%, less than or equal to about 10 wt%, less than or equal to about 9 wt%, less than or equal to about 8 wt%, less than or equal to about 7 wt%, less than or equal to about 6 wt%, or less than or equal to about 5 wt%, based on the total solid content. The content of the thiol compound may be greater than or equal to about 0.1 wt%, for example, greater than or equal to about 0.5 wt%, greater than or equal to about 1 wt%, greater than or equal to about 5 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, greater than or equal to about 18 wt%, or greater than or equal to about 20 wt%, based on the total solid content.

[0230] The composition or liquid carrier may include an organic solvent. In certain embodiments, the composition or liquid carrier may not include an organic solvent. If present, the type of organic solvent that can be used is not particularly limited. Considering the aforementioned main components (i.e., semiconductor nanoparticles, dispersants, polymerizable monomers, initiators, thiol compounds, etc., if present) and the type and amount of other additives to be described here, the type and amount of the organic solvent are appropriately determined. In addition to the (non-volatile) solid of the desired content, the composition may include a residual amount of solvent. In one or more embodiments, examples of organic solvents may be: ethylene glycol (such as ethylene glycol, diethylene glycol, polyethylene glycol, etc.); ethylene glycol ether solvents (such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, etc.); ethylene glycol ether acetate solvents (such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, etc.); propylene glycol solvents (such as propylene glycol, etc.); propylene glycol ether solvents (such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol diethyl ether, etc.); propylene glycol ether acetate solvents (such as propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate , etc.); amide solvents (such as N-methylpyrrolidone, dimethylformamide, dimethylacetamide, etc.); ketone solvents (such as methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclohexanone, etc.); petroleum solvents (such as toluene, xylene, solvent naphtha, etc.); ester solvents (such as ethyl acetate, butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, etc.); ether solvents (such as diethyl ether, dipropyl ether, dibutyl ether, etc.); chloroform, C1 to C40 aliphatic hydrocarbon solvents (e.g., alkanes, olefins or alkynes), halogen (e.g., chlorine) substituted C1 to C40 aliphatic hydrocarbon solvents (e.g., dichloroethane, chloroform, etc.), C6 to C40 aromatic hydrocarbon solvents (e.g., toluene, xylene, etc.), halogen (e.g., chlorine) substituted C6 to C40 aromatic hydrocarbon solvents; or combinations thereof.

[0231] In addition to the aforementioned components, the composition (or composite) of one or more embodiments may further include additives (such as light diffusers, leveling agents, coupling agents, or combinations thereof). The components (adhesives, monomers, solvents, additives, thiol compounds, cardo adhesives, etc.) included in the composition of one or more embodiments may be appropriately selected, and for specific details thereof, reference may be made to, for example, US-2017-0052444-A1, the entire contents of which are incorporated herein.

[0232] In the preparation of the composition according to the embodiment, each of the above components may be prepared sequentially or mixed simultaneously, and the order thereof is not particularly limited.

[0233] The composition can provide a color conversion layer (or a patterned film of the composite) by (eg, free radical) polymerization. The color conversion layer (or a patterned film of the composite) can be produced using a photoresist composition. Figure 2A , the method may include: forming a film of the aforementioned composition on a substrate (S1); pre-baking the film according to selection (S2); exposing selected areas of the film to light (EXP) (e.g., having a wavelength less than or equal to about 400 nm) (S3); and developing the exposed film with an alkaline developer (DEV) to obtain a pattern of the composite (S4).

[0234] Reference Figure 2A , the aforementioned composition can be applied to a substrate to a predetermined thickness using a suitable method such as spin coating or slit coating to form a film. The formed film can optionally be subjected to a pre-baking (PRB) step. Pre-baking can be performed by selecting appropriate conditions from known conditions such as temperature, time, atmosphere, etc.

[0235] Under a mask with a predetermined pattern, the formed (or optionally pre-baked) film is exposed to light with a predetermined wavelength. The wavelength and intensity of the light can be selected taking into account the type and content of the photoinitiator, the type and content of the quantum dots, etc.

[0236] The exposed film can then be treated (e.g., immersed or sprayed) with an alkaline developer to dissolve the unexposed area and obtain a desired pattern. Optionally, the obtained pattern can be subjected to a post-exposure bake (POB) at a temperature of, for example, about 150° C. to about 230° C. for a predetermined time (e.g., greater than or equal to about 10 minutes or greater than or equal to about 20 minutes) to improve the crack resistance and solvent resistance of the pattern (S5).

[0237] When the patterned film of the color conversion layer or the composite has a plurality of repeating parts (i.e., color conversion regions), each repeating part can be formed by preparing a plurality of compositions including quantum dots (e.g., red light-emitting quantum dots, green light-emitting quantum dots, or optional blue light-emitting quantum dots) having desired luminescent properties (photoluminescence peak wavelength, etc.) and repeating the aforementioned pattern forming process multiple times (e.g., 2 times or more or 3 times or more) as needed for each composition, resulting in a composite having a desired pattern (S6). For example, the composite can have a pattern of at least two repeating color parts (e.g., RGB color parts). The composite pattern can be used as a photoluminescent color filter in a display device.

[0238] The patterned film of the color conversion layer or composite can be manufactured using an ink composition configured to form a pattern in an inkjet manner. Figure 2B, the method may include: preparing an ink composition according to one or more embodiments; providing a substrate (e.g., having a pixel region patterned by an electrode and an optional bank or trench-type partition wall, etc.); and depositing the ink composition on the substrate (or pixel region) to form, for example, a first composite layer or a first quantum dot layer (or a first region). The method may include depositing the ink composition on the substrate (or pixel region) to form, for example, a second composite layer or a second quantum dot layer (or a second region). The formation of the first composite layer and the formation of the second composite layer may be performed simultaneously or sequentially.

[0239] The deposition of the ink composition can be performed using an appropriate liquid crystal emitter (e.g., an inkjet or nozzle printing system (having an ink reservoir and at least one print head). The deposited ink composition can provide a (first or second) composite layer by removing the solvent through heating and polymerizing. The method can provide a highly accurate composite film or patterned film in a short time by a simple method.

[0240] In the composite of one or more embodiments (e.g., the first composite), the (polymer) matrix may include the components described herein with respect to the composition. In the composite, the amount of the (polymer) matrix may be greater than or equal to about 10 wt%, greater than or equal to about 20 wt%, greater than or equal to about 30 wt%, greater than or equal to about 40 wt%, greater than or equal to about 50 wt%, or greater than or equal to about 60 wt%, based on the total weight of the composite. The amount of the (polymer) matrix may be less than or equal to about 95 wt%, less than or equal to about 90 wt%, less than or equal to about 80 wt%, less than or equal to about 70 wt%, less than or equal to about 60 wt%, or less than or equal to about 50 wt%, based on the total weight of the composite.

[0241] The (polymer) matrix may include at least one of a dispersant (e.g., a binder polymer containing a carboxylic acid group), a polymerization product of a polymerizable monomer including (at least one, e.g., at least two, at least three, at least four, or at least five) carbon-carbon double bonds (e.g., an insulating polymer), and a polymerization product of a polymerizable monomer and a polythiol compound having at least two thiol groups at the terminal. The (polymer) matrix may include a linear polymer, a cross-linked polymer, or a combination thereof. The (polymer) matrix may not include a conjugated polymer (except for cardo resin). The (polymer) matrix may include a conjugated polymer.

[0242] The cross-linked polymer may include a thiol-ene resin, a cross-linked poly(meth)acrylate, a cross-linked polyurethane, a cross-linked epoxy resin, a cross-linked vinyl polymer, a cross-linked silicone resin, or a combination thereof. In one or more embodiments, the cross-linked polymer may be a polymerization product of the aforementioned polymerizable monomer and an optional polythiol compound.

[0243] The linear polymer may include repeating units derived from carbon-carbon unsaturated bonds (e.g., carbon-carbon double bonds). The repeating units may include carboxylic acid groups. The linear polymer may include ethylene repeating units.

[0244] The repeating unit including a carboxylic acid group may include a unit derived from a monomer including a carboxylic acid group and a carbon-carbon double bond, a unit derived from a monomer having a dianhydride moiety, or a combination thereof.

[0245] The (polymer) matrix may include a compound (eg, a binder, a binder polymer or a dispersant) comprising carboxylic acid groups (eg, for dispersing semiconductor nanoparticles or a binder).

[0246] The first composite (or its film or pattern) may have a thickness of, for example, less than or equal to about 30 μm, less than or equal to about 25 μm, less than or equal to about 20 μm, less than or equal to about 15 μm, less than or equal to about 10 μm, less than or equal to about 8 μm, or less than or equal to about 7 μm and greater than or equal to about 2 μm (e.g., greater than or equal to about 3 μm, greater than or equal to about 3.5 μm, greater than or equal to about 4 μm, greater than or equal to about 5 μm, greater than or equal to about 6 μm, greater than or equal to about 7 μm, greater than or equal to about 8 μm, greater than or equal to about 9 μm, or greater than or equal to about 10 μm).

[0247] The aforementioned semiconductor nanoparticles, a composite (pattern) including the aforementioned semiconductor nanoparticles, or a color conversion panel including the same may be included in an electronic device. Such an electronic device may include a display device, a light emitting diode (LED), an organic light emitting diode (OLED), a quantum dot LED, a sensor, a solar cell, an imaging sensor, a photodetector, or a liquid crystal display device, but the embodiment is not limited thereto. The aforementioned quantum dots may be included in an electronic device. Such an electronic device may include a portable terminal device, a monitor, a notebook PC, a television, an electronic sign, a camera, a car, etc., but the embodiment is not limited thereto. The electronic device may be a portable terminal device, a monitor, a notebook PC, or a television including a display device (or a light emitting device) containing quantum dots. The electronic device may be a camera or a mobile terminal device including an image sensor including quantum dots. The electronic device may be a camera or a vehicle including a photodetector including quantum dots.

[0248] Embodiments provide a color conversion layer (e.g., a color conversion structure or a color conversion panel) comprising a color conversion region comprising semiconductor nanoparticles as described herein. The color conversion panel comprises a color conversion layer, the color conversion layer comprising a color conversion region and an optional partition wall defining each region of the color conversion layer, the color conversion region comprising a first region corresponding to a first pixel, and the first region comprising semiconductor nanoparticles or a composite. In the color conversion panel of an embodiment, the composite may be in the form of a patterned film. In another embodiment, the composite may have a sheet form.

[0249] The color conversion panel of an embodiment may include a color conversion layer, the color conversion layer including a color conversion region and an optional partition wall defining each region of the color conversion layer. The color conversion region may include a first region corresponding to a first pixel. The first region includes a first composite, and the first composite includes a matrix and semiconductor nanoparticles dispersed in the matrix and is configured to emit a first light. An embodiment provides semiconductor nanoparticles or a group thereof.

[0250] The color conversion layer (eg, color conversion structure) may include the composite or a patterned film of the composite according to one or more embodiments. Figure 3A is a schematic cross-sectional view of a color conversion panel according to one or more embodiments. Figure 3A The color conversion panel may also optionally include partition walls (eg, a black matrix BM, a bank, or a combination thereof) that define each region of the color conversion layer (eg, the color conversion structure). Figure 3B An electronic device (display device) including a color conversion panel and a light source according to another embodiment is shown. In the electronic device of one or more embodiments, the color conversion panel including the color conversion layer or the color conversion structure is disposed on an on-chip LED (e.g., on-chip micro-LED). Figure 3B , a circuit (Si driver IC) configured to drive a light source can be disposed below a light source (e.g., a blue LED) configured to emit incident light (e.g., blue light). The color conversion layer may include a first composite comprising first semiconductor nanoparticles emitting a first light (e.g., green light) and a second composite comprising second semiconductor nanoparticles emitting a second light (e.g., red light), or may include a third composite that emits a third light (e.g., incident light or blue light) or allows a third light (e.g., incident light or blue light) to pass through. A partition wall PW (e.g., comprising an inorganic material such as silicon or silicon oxide or based on an organic material) may be disposed between the composites. The partition wall may include a groove hole, a via hole, or a combination thereof. A first optical element (e.g., an absorptive color filter) may be disposed on a light extraction surface of the color conversion layer. Additional optical elements (such as microlenses) may be further disposed on the first optical element.

[0251] The color conversion region includes a first region configured to emit the aforementioned first light (or green light) (e.g., by irradiation with incident light). In one or more embodiments, the first region may correspond to a green pixel. The first region includes a first composite (e.g., a light-emitting composite). The first light may have a peak emission wavelength within a wavelength range to be described later. The first light will be described in more detail with respect to the semiconductor nanoparticles described herein. The maximum emission wavelength of the green light may be greater than or equal to about 500 nm, greater than or equal to about 501 nm, greater than or equal to about 504 nm, greater than or equal to about 505 nm, or greater than or equal to about 520 nm. The maximum emission wavelength of the green light may be less than or equal to about 580 nm, less than or equal to about 560 nm, less than or equal to about 550 nm, less than or equal to about 530 nm, less than or equal to about 525 nm, less than or equal to about 520 nm, less than or equal to about 515 nm, or less than or equal to about 510 nm.

[0252] The color conversion region may further include (e.g., one or more) second regions configured to emit a second light (e.g., red light) different from the first light (e.g., by irradiation with excitation light). The second region may include a second composite. The second composite in the second region may include semiconductor nanoparticles (e.g., quantum dots) configured to emit light of a different wavelength (e.g., a different color) than the first composite disposed in the first region.

[0253] The second light may be red light having a maximum emission wavelength of about 600 nm to about 650 nm (e.g., about 620 nm to about 650 nm). The color conversion panel may also include (one or more) third regions that emit a third light (e.g., blue light) different from the first light and the second light or pass a third light (e.g., blue light) different from the first light and the second light. The incident light may include a third light (e.g., blue light and optional green light). The third light may include blue light having a peak emission wavelength greater than or equal to about 380 nm (e.g., greater than or equal to about 440 nm, greater than or equal to about 445 nm, greater than or equal to about 450 nm, or greater than or equal to about 455 nm) and less than or equal to about 480 nm (e.g., less than or equal to about 475 nm, less than or equal to about 470 nm, less than or equal to about 465 nm, or less than or equal to about 460 nm).

[0254] In one or more embodiments, the color conversion panel or color conversion layer may include a plurality of first regions, and the composite may constitute a predetermined pattern respectively disposed in the first regions of the color conversion panel. The composite (or its pattern) may be prepared from the (ink) composition by any method (e.g., photolithographically or by inkjet printing). Thus, one or more embodiments relate to a composition comprising semiconductor nanoparticles as described in more detail herein.

[0255] In one or more embodiments, the electronic device or display device (e.g., a display panel) may further include a color conversion layer (or color conversion panel) and an optional light source. The light source may provide incident light to the color conversion layer or the color conversion panel. In one or more embodiments, the display panel includes a light emitting panel (or light source), the aforementioned color conversion panel, and a light transmission layer positioned between the aforementioned light emitting panel and the aforementioned color conversion panel. The color conversion panel includes a substrate, and the color conversion layer may be disposed on the substrate. (See Figure 4A and Figure 4C )

[0256] When a light source or light emitting panel is present, the light source or light emitting panel can provide incident light to the color conversion layer or the color conversion panel. The incident light can have a peak emission wavelength greater than or equal to about 440 nm (e.g., greater than or equal to about 450 nm) and less than or equal to about 580 nm (e.g., less than or equal to about 480 nm, less than or equal to about 470 nm, or less than or equal to about 460 nm).

[0257] In one or more embodiments, an electronic device (eg, a photoluminescent device) may also include a sheet of the composite. Figure 4B , the device may include a backlight unit 410 and a liquid crystal panel 420, wherein the backlight unit 410 may include a quantum dot polymer composite sheet (QD sheet). Specifically, the backlight unit 410 may have a structure in which a reflector, a light guide plate (LGP), a light source (blue LED, etc.), a quantum dot polymer composite sheet (QD sheet), and an optical film (prism, dual brightness enhancement film (DBEF), etc.) may be stacked. The liquid crystal panel 420 may be disposed on the backlight unit 410 and have a structure including a thin film transistor (TFT), a liquid crystal (LC), and a color filter between two polarizers (Pol). The quantum dot polymer composite sheet (QD sheet) may include semiconductor nanoparticles (e.g., quantum dots) that emit red and green light after absorbing light from a light source. The blue light provided from the light source may be combined with the red and green light emitted from the corresponding semiconductor nanoparticles while passing through the quantum dot polymer composite sheet, and converted into white light. For each pixel, the white light may be separated into blue light, green light, and red light by the color filter in the liquid crystal panel and then emitted to the outside. Reference Figure 4D, a backlight unit (BLU) may be a direct-type BLU without a light guide plate, and may include a plurality of LEDs (eg, mini LEDs).

[0258] The color conversion panel may include a substrate, and the color conversion layer may be disposed on the substrate. The color conversion layer or the color conversion panel may include a patterned film of a composite. The patterned film may include a repeating portion configured to emit light of a desired wavelength. The repeating portion may include a second region. The second region may be a red luminescent portion. The repeating portion may include a first region. The first region may be a green luminescent portion. The repeating portion may include a third region. The third region may include a portion that emits or transmits blue light. The details of the first region, the second region, and the third region are as described herein.

[0259] The light emitting panel or light source may be an element that emits incident light (e.g., excitation light). The incident light may include blue light and optionally green light. The light source may include an LED. The light source may include an organic LED (OLED). The light source may include a micro-LED. On the front surface (light emitting surface) of the first region and the second region, an optical element (e.g., a blue light (and optionally green light) blocking layer or a first filter to be described herein) for blocking (e.g., reflecting or absorbing) blue light (and optionally green light) may be provided. In one or more embodiments, the light source may include an organic light emitting diode that emits blue light and an organic light emitting diode that emits green light, and a filter that removes green light may be further provided on a third region through which the blue light is transmitted.

[0260] The light emitting panel or light source may include a plurality of light emitting units corresponding to the first region and the second region, respectively, and the light emitting unit may include a first electrode and a second electrode facing each other and an (organic) electroluminescent layer positioned between the first electrode and the second electrode. The electroluminescent layer may include an organic light emitting material. For example, each light emitting unit of the light source may include an electroluminescent device (e.g., an organic light emitting diode (OLED)) configured to emit light of a predetermined wavelength (e.g., blue light, green light, or a combination thereof). The structure and material of the electroluminescent device or the organic light emitting diode (OLED) are not particularly limited.

[0261] Hereinafter, a display panel and a color conversion panel will be described in more detail with reference to the accompanying drawings.

[0262] Reference Figure 4A and Figure 4C, the display panel 1000 according to one or more embodiments includes a light emitting panel 40 and a color conversion panel 50. The display panel or electronic device may further include a light transmission layer 60 disposed between the light emitting panel 40 and the color conversion panel 50 and an adhesive material 70 that bonds the light emitting panel 40 and the color conversion panel 50. The light transmission layer may include a passivation layer, a filling material, an encapsulation layer, or a combination thereof (not shown). The material for the light transmission layer may be appropriately selected without particular limitation. The material for the light transmission layer may be an inorganic material, an organic material, an organic / inorganic hybrid material, or a combination thereof.

[0263] The light emitting panel 40 and the color conversion panel 50 each have surfaces facing each other (i.e., the two respective panels face each other), and a light transmission layer (or light transmission panel) 60 is provided between the two panels. The color conversion panel 50 is provided in a direction such that, for example, light emitted from the light emitting panel 40 irradiates the light transmission layer 60. An adhesive material 70 is provided along the edges of the light emitting panel 40 and the color conversion panel 50, and may be, for example, a sealing material.

[0264] Figure 5A is a plan view of one or more embodiments of a pixel arrangement of a display panel. Figure 5A , the display panel 1000 includes a display area 1000D that displays an image and a non-display area 1000P that is positioned in a peripheral area of ​​the display area 1000D and is provided with an adhesive material.

[0265] The display region 1000D includes a plurality of pixels PX arranged along rows (eg, x direction) and columns (eg, y direction), and each representative pixel PX may include a plurality of sub-pixels PX representing (eg, displaying) colors different from each other. 1 , PX 2 and PX 3 One or more embodiments are based on three sub-pixels PX 1 , PX 2 and PX 3 The structure configured to provide one pixel is shown. One or more embodiments may also include additional sub-pixels such as white sub-pixels, and may also include, for example, at least one sub-pixel that exhibits (e.g., displays) the same color. The plurality of pixels PX may be arranged, for example, in a Bayer matrix, a matrix sold under the trade name PenTile, a diamond matrix, etc., or a combination thereof.

[0266] Sub-pixel PX 1 , PX 2 and PX 3 The color of the three primary colors or the combination of the three primary colors can be represented (eg, displayed), for example, the color of red, green, blue or the combination thereof can be represented (eg, displayed).1 The second sub-pixel PX can represent (eg, display) red. 2 The third sub-pixel PX can represent (eg, display) green. 3 The blue color may be expressed (eg, displayed).

[0267] In the drawings, all sub-pixels are shown as having the same size, but these are not limited thereto, and at least one of the sub-pixels may be larger or smaller than the other sub-pixels. In the drawings, all sub-pixels are shown as having the same shape, but these are not limited thereto, and at least one of the sub-pixels may have a shape different from that of the other sub-pixels.

[0268] In a display panel or electronic device according to one or more embodiments, the light emitting panel may include a substrate and a TFT (eg, a TFT including oxide, etc.) disposed on the substrate. A light emitting device (eg, having a tandem structure, etc.) may be disposed on the TFT.

[0269] The light emitting device may include a light emitting layer (e.g., a blue light emitting layer, a green light emitting layer, or a combination thereof) positioned between a first electrode and a second electrode facing each other. A charge generating layer may be disposed between each light emitting layer. Each of the first electrode and the second electrode may be patterned into a plurality of electrode elements corresponding to a pixel. The first electrode may be an anode or a cathode. The second electrode may be a cathode or an anode.

[0270] The light emitting device may include an organic LED, a nanorod LED, a mini LED, a micro LED, or a combination thereof.

[0271] FIG. 5B to FIG. 5E are cross-sectional views showing examples of light-emitting devices, respectively. In an embodiment, a "mini LED" may have a size of greater than or equal to about 100 microns, greater than or equal to about 150 microns, or greater than or equal to about 200 microns and less than or equal to about 1 mm, less than or equal to about 0.5 mm, less than or equal to about 0.15 mm, or less than or equal to about 0.12 mm, but is not limited thereto. In an embodiment, a "micro LED" may have a size of less than or equal to about 100 microns, less than or equal to about 50 microns, or less than or equal to about 10 microns. The size of a micro LED may be greater than or equal to about 0.1 micron, greater than or equal to about 0.5 micron, greater than or equal to about 1 micron, or greater than or equal to about 5 microns, but is not limited thereto.

[0272] Reference Figure 5BThe light emitting device 180 may include a first electrode 181 and a second electrode 182 facing each other, a light emitting layer 183 positioned between the first electrode 181 and the second electrode 182, and optional auxiliary layers 184 and 185 positioned between the first electrode 181 and the light emitting layer 183 and between the second electrode 182 and the light emitting layer 183, respectively.

[0273] The first electrode 181 and the second electrode 182 may be arranged to face each other along the thickness direction (e.g., z direction), and either of the first electrode 181 and the second electrode 182 may be an anode, and the other may be a cathode. The first electrode 181 may be a light-transmitting electrode, a semi-transparent electrode, or a reflective electrode, and the second electrode 182 may be a light-transmitting electrode or a semi-transparent electrode. The light-transmitting electrode or the semi-transparent electrode may be made of, for example, a thin single-layer or multi-layer metal film, the metal film including: a conductive metal oxide (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO), etc.); or silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), or a combination thereof. The reflective electrode may include a metal, a metal nitride, or a combination thereof (e.g., silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), an alloy thereof, a nitride thereof (e.g., TiN), or a combination thereof), but the embodiment is not limited thereto.

[0274] The light emitting layer 183 may include a first light emitting body that emits light having a blue emission spectrum, a second light emitting body that emits light having a green emission spectrum, or a combination thereof.

[0275] The blue emission spectrum may have a peak emission wavelength in a wavelength region greater than or equal to about 400 nm and less than about 500 nm and within this range in a wavelength region of about 410 nm to about 490 nm, about 420 nm to about 480 nm, about 430 nm to about 470 nm, about 440 nm to about 465 nm, about 445 nm to about 460 nm, or about 450 nm to about 458 nm.

[0276] The green emission spectrum may have a peak emission wavelength in a wavelength region greater than or equal to about 500 nm and less than about 590 nm and within this range in a wavelength region of about 510 nm to about 580 nm, about 515 nm to about 570 nm, about 520 nm to about 560 nm, about 525 nm to about 555 nm, about 530 nm to about 550 nm, or about 535 nm to about 545 nm.

[0277] For example, the light-emitting layer 183 or the light-emitting body included therein may include a phosphorescent material, a fluorescent material, or a combination thereof. For example, the light-emitting body may include an organic light-emitting body, wherein the organic light-emitting body may be a low molecular compound, a polymer compound, or a combination thereof. The specific types of phosphorescent materials and fluorescent materials are not particularly limited, but may be appropriately selected from known materials. For example, the light-emitting body may include an inorganic light-emitting body, and the inorganic light-emitting body may be an inorganic semiconductor, a quantum dot, a perovskite, or a combination thereof. The inorganic semiconductor may include a metal nitride, a metal oxide, or a combination thereof. The metal nitride, the metal oxide, or a combination thereof may include a group III metal (such as aluminum, gallium, indium, thallium, etc.), a group IV metal (such as silicon, germanium, tin), or a combination thereof. In one or more embodiments, the light-emitting body may include an inorganic light-emitting body, and the light-emitting device 180 may be a quantum dot light-emitting diode, a perovskite light-emitting diode, or a micro light-emitting diode (μLED). The material that can be used as an inorganic light-emitting body may be appropriately selected.

[0278] In one or more embodiments, the light emitting device 180 may further include auxiliary layers 184 and 185. The auxiliary layers 184 and 185 may be respectively disposed between the first electrode 181 and the light emitting layer 183 and / or between the second electrode 182 and the light emitting layer 183. The auxiliary layers 184 and 185 may be charge auxiliary layers for controlling the injection and / or mobility of charges. The auxiliary layers 184 and 185 may include at least one layer or two layers, and for example, may include a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, a hole blocking layer, or a combination thereof. If desired, at least one of the auxiliary layers 184 and 185 may be omitted. The auxiliary layer may be formed of a material appropriately selected from known materials for organic electroluminescent devices, etc.

[0279] Set in sub-pixel PX 1 , PX 2 and PX 3 The light emitting devices 180 in each of the sub-pixels PX may be the same as or different from each other. 1 , PX 2 and PX 3 The light emitting device 180 in each of the sub-pixels PX may emit light having the same or different emission spectra. 1 , PX 2 and PX 3 The light emitting device 180 in each of the sub-pixels PX may emit, for example, light having a blue emission spectrum, light having a green emission spectrum, or a combination thereof. 1 , PX 2 and PX 3 The light emitting devices 180 in each of the may be separated by a pixel defining layer (not shown).

[0280] Reference Figure 5C The light-emitting device 180 may be a light-emitting device having a series structure, and includes a first electrode 181 and a second electrode 182 facing each other, a first light-emitting layer 183a and a second light-emitting layer 183b positioned between the first electrode 181 and the second electrode 182, a charge generation layer 186 positioned between the first light-emitting layer 183a and the second light-emitting layer 183b, and optional auxiliary layers 184 and 185 positioned between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the second light-emitting layer 183b, respectively.

[0281] Details of the first electrode 181 , the second electrode 182 , and the auxiliary layers 184 and 185 are as described herein.

[0282] The first light-emitting layer 183a and the second light-emitting layer 183b may emit light having the same or different emission spectra. In one or more embodiments, the first light-emitting layer 183a or the second light-emitting layer 183b may emit light having a blue emission spectrum or light having a green emission spectrum, respectively. The charge generation layer 186 may inject charge into the first light-emitting layer 183a and / or the second light-emitting layer 183b, and may control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The charge generation layer 186 may include, for example, an n-type layer and a p-type layer, and may include, for example, an electron transport material and / or a hole transport material including an n-type dopant and / or a p-type dopant. The charge generation layer 186 may include one layer or two or more layers.

[0283] Reference Figure 5D , a light-emitting device (having a series structure) may include: a first electrode 181 and a second electrode 182 facing each other; a first light-emitting layer 183a, a second light-emitting layer 183b and a third light-emitting layer 183c positioned between the first electrode 181 and the second electrode 182; a first charge generation layer 186a positioned between the first light-emitting layer 183a and the second light-emitting layer 183b; a second charge generation layer 186b positioned between the second light-emitting layer 183b and the third light-emitting layer 183c; and optional auxiliary layers 184 and 185 respectively positioned between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the third light-emitting layer 183c.

[0284] Details of the first electrode 181 , the second electrode 182 , and the auxiliary layers 184 and 185 are as described herein.

[0285] The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c may emit light having the same or different emission spectra. The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c may emit blue light. In one or more embodiments, the first light-emitting layer 183a and the third light-emitting layer 183c may emit light of a blue emission spectrum, and the second light-emitting layer 183b may emit light of a green emission spectrum. In another embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c may emit light of a green emission spectrum, and the second light-emitting layer 183b may emit light of a blue emission spectrum.

[0286] The first charge generation layer 186a can inject charges into the first light-emitting layer 183a and / or the second light-emitting layer 183b, and can control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The second charge generation layer 186b can inject charges into the second light-emitting layer 183b and / or the third light-emitting layer 183c, and can control the charge balance between the second light-emitting layer 183b and the third light-emitting layer 183c. Each of the first charge generation layer 186a and the second charge generation layer 186b can include one layer or two or more layers, respectively.

[0287] Reference Figure 5E In one or more embodiments, the light emitting device 180 includes a light emitting layer 183 , a first electrode 181 , a second electrode 182 , and a plurality of nanostructures 187 arranged in the light emitting layer 183 .

[0288] One of the first electrode 181 and the second electrode 182 may be an anode, and the other may be a cathode. The first electrode 181 and the second electrode 182 may be electrodes patterned according to the arrangement direction of the plurality of nanostructures 187, and may include, for example, a conductive oxide (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), etc.); or silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), alloys thereof, nitrides thereof (e.g., TiN), or combinations thereof, but the embodiment is not limited thereto.

[0289] The light emitting layer 183 may include a plurality of nanostructures 187, and the sub-pixel PX 1 , PX 2 and PX 3Each of the nanostructures 187 may include a plurality of nanostructures 187. In one or more embodiments, a plurality of nanostructures 187 may be arranged in one direction, but the embodiment is not limited thereto. The nanostructure 187 may be a semiconductor containing a compound configured to emit light of a predetermined wavelength, for example, by applying an electric current, and may be, for example, a linear nanostructure (such as a nanorod or a nanoneedle). The diameter or long diameter of the nanostructure 187 may be, for example, a few nanometers to several hundred nanometers, and the aspect ratio of the nanostructure 187 may be greater than or equal to about 1, greater than or equal to about 1.5, greater than or equal to about 2.0, greater than or equal to about 3.0, greater than or equal to about 4.0, greater than or equal to about 4.5, or greater than or equal to about 5.0 and less than or equal to about 20, may be about 1.5 to about 20, about 2.0 to about 20, about 3.0 to about 20, about 4.0 to about 20, about 4.5 to about 20, or about 5.0 to about 20.

[0290] Each of the nanostructures 187 may include a p-type region 187p, an n-type region 187n, and a multi-quantum well region 187i, and may be configured to emit light from the multi-quantum well region 187i. The nanostructure 187 may include, for example, gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or a combination thereof, and may have, for example, a core-shell structure.

[0291] Each of the plurality of nanostructures 187 may emit light having the same or different emission spectra. In one or more embodiments, the nanostructures may emit light having a blue emission spectrum (e.g., light having a blue emission spectrum having a peak emission wavelength in a wavelength region of greater than or equal to about 400 nm and less than or equal to about 500 nm, about 410 nm to about 490 nm, or about 420 nm to about 480 nm).

[0292] Figure 6 is a schematic cross-sectional view of a device (or display panel) according to one or more embodiments. Figure 6, the light source (or light emitting panel) may include an organic light emitting diode that emits blue light (B) (and optionally green light (G)). The organic light emitting diode (OLED) may include at least two pixel electrodes 90a, 90b, 90c formed on a substrate 100, a pixel defining layer 150a, 150b formed between adjacent pixel electrodes 90a, 90b, 90c, an organic light emitting layer 140a, 140b, 140c formed on each pixel electrode 90a, 90b, 90c, and a common electrode layer 130 formed on the organic light emitting layer 140a, 140b, 140c. A thin film transistor (TFT) and a substrate not shown may be disposed below the organic light emitting diode (OLED). The pixel areas of the OLED may be arranged to correspond to the first area, the second area, and the third area described herein. In one or more embodiments, the color conversion panel and the light emitting panel may be separated, such as Figure 6 In one or more embodiments, the color conversion panel can be stacked directly on the light emitting panel.

[0293] A stacked structure including a light-emitting nanostructure composite pattern 170 (e.g., a first region 11 or R including a light-emitting nanostructure emitting red light, a second region 21 or G including a light-emitting nanostructure emitting green light, and a third region 31 or B including or not including a light-emitting nanostructure (e.g., a light-emitting nanostructure emitting blue light)) and a transparent substrate 240 can be disposed on a light source. Blue light emitted from the light source enters the first region and the second region, and red light and green light can be emitted, respectively. The blue light emitted from the light source can pass through the third region. If desired, an element configured to block excitation light (a first filter 160 or an excitation light blocking layer) can be disposed between the light-emitting nanostructure composite layers R and G and the substrate. In one or more embodiments, the excitation light includes blue light and green light, and a filter (not shown) that blocks green light can be added to the third region. The first filter or the excitation light blocking layer will be described in more detail herein.

[0294] Such a (display) device can be manufactured by separately manufacturing the aforementioned stacked structure and (eg, emitting blue light) LED or OLED, and then combining the stacked structure and LED or OLED. The (display) device can be manufactured by directly forming a light-emitting nanostructure composite pattern on an LED or OLED.

[0295] In the color conversion panel or display device, the substrate may be a substrate including an insulating material. The substrate may include glass, a polymer (polyester such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), etc., polycarbonate, or polyacrylate), a polysiloxane (e.g., PDMS, etc.), an inorganic material (e.g., Al 2 O 3, ZnO, etc.) or a combination thereof, but the embodiment is not limited thereto. The thickness of the substrate may be appropriately selected in consideration of the substrate material, but is not particularly limited. The substrate may be flexible. For light emitted from the semiconductor nanoparticles, the substrate may have a transmittance greater than or equal to about 50%, greater than or equal to about 60%, greater than or equal to about 70%, greater than or equal to about 80%, or greater than or equal to about 90%.

[0296] A wiring layer including a thin film transistor and the like may be formed on a substrate. The wiring layer may also include a gate line, a sustaining voltage line, a gate insulating film, a data line, a source electrode, a drain electrode, a semiconductor layer, a protective layer, and the like. The detailed structure of the wiring layer may vary according to one or more embodiments. The gate line and the sustaining voltage line may be electrically separated from each other, and the data line may be insulated from the gate line and the sustaining voltage line and intersect the gate line and the sustaining voltage line. The gate electrode, the source electrode, and the drain electrode may form a control terminal, an input terminal, and an output terminal of the thin film transistor, respectively. The drain electrode may be electrically connected to the pixel electrode to be described herein.

[0297] The pixel electrode may be used as an electrode (e.g., an anode) of a display device. The pixel electrode may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The pixel electrode may be formed of a material having a light blocking property such as gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or titanium (Ti). The pixel electrode may have a two-layer structure in which a transparent conductive material and a material having a light blocking property are sequentially stacked.

[0298] Between two adjacent pixel electrodes, a pixel defining layer (PDL) may overlap a terminal of the pixel electrode to divide the pixel electrode into pixel units. The pixel defining layer is an insulating layer that may electrically block at least two pixel electrodes.

[0299] The pixel defining layer may cover a portion of the upper surface of the pixel electrode, and a remaining area of ​​the pixel electrode not covered by the pixel defining layer may provide an opening. The organic light emitting layer to be described herein may be formed on the area defined by the opening.

[0300] The organic light-emitting layer may define each pixel region by the aforementioned pixel electrode and the pixel defining layer. In other words, one pixel region may be defined as a region in which an organic light-emitting unit layer is formed, and the organic light-emitting unit layer contacts one pixel electrode divided by the pixel defining layer. In a display device according to one or more embodiments, the organic light-emitting layer may be defined as a first pixel region, a second pixel region, and a third pixel region, and the pixel regions may be spaced apart from each other by leaving a predetermined interval by the pixel defining layer.

[0301] In one or more embodiments, the organic light emitting layer may emit a third light belonging to the visible light region or to the ultraviolet (UV) region. Each of the first pixel region to the third pixel region of the organic light emitting layer may emit a third light. In one or more embodiments, the third light may be light having higher energy in the visible light region, and for example, may be blue light (and optionally green light). In one or more embodiments, all pixel regions of the organic light emitting layer are designed to emit the same light, and each pixel region of the organic light emitting layer may be formed of the same or similar material, or may display the same or similar properties. Therefore, the process of forming the organic light emitting layer can be simplified, and the display device can be easily applied to large-scale / large-area processes (e.g., manufactured by large-scale / large-area processes). However, the organic light emitting layer according to one or more embodiments is not necessarily limited thereto, but the organic light emitting layer may be designed to emit at least two different lights, for example, at least two different colors of light.

[0302] The organic light emitting layer includes an organic light emitting unit layer in each pixel region, and each organic light emitting unit layer may further include an auxiliary layer (eg, a hole injection layer, a hole transport layer, an electron transport layer, etc.) in addition to the light emitting layer.

[0303] The common electrode may be used as a cathode of the display device. The common electrode may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The common electrode may be formed on the organic light emitting layer and may be integrated with the organic light emitting layer.

[0304] A planarization layer or a passivation layer (not shown) may be formed on the common electrode. The planarization layer may include an (eg, transparent) insulating material for ensuring electrical insulation from the common electrode.

[0305] In one or more embodiments, the display device may further include a lower substrate, a stacked structure disposed below the lower substrate, and a liquid crystal layer disposed between the stacked structure and the lower substrate, and in the stacked structure, the photoluminescent layer (i.e., the light-emitting layer) may be disposed to face the liquid crystal layer. The display device may further include a polarizing plate positioned between the liquid crystal layer and the light-emitting layer. The light source may further include an LED and (if desired) a light guide plate.

[0306] In one or more embodiments, a display device (eg, a liquid crystal display device) is illustrated with reference to the accompanying drawings. Fig. 7A 1 is a schematic cross-sectional view showing a liquid crystal display device according to one or more embodiments. Fig. 7A , the display device of one or more embodiments includes a liquid crystal panel 200 , a polarizing plate 300 disposed under the liquid crystal panel 200 , and a backlight unit disposed under the polarizing plate 300 .

[0307] The liquid crystal panel 200 may include a lower substrate 210, a stack structure, and a liquid crystal layer 220 disposed between the stack structure and the lower substrate. The stack structure may include a transparent substrate 240, a first filter layer 310, a photoluminescent layer 230 including a pattern of a composite, and a second filter layer 311.

[0308] The lower substrate 210 (also referred to as an array substrate) may be a transparent insulating material substrate. The substrate may be as described herein. The wiring board 211 may be disposed on the upper surface of the lower substrate 210. The wiring board 211 may include a plurality of gate lines (not shown) and data lines (not shown) defining pixel regions, a thin film transistor disposed adjacent to the intersection region of the gate lines and the data lines, and a pixel electrode for each pixel region, but the embodiment is not limited thereto. The details of such a wiring board are not particularly limited.

[0309] The liquid crystal layer 220 may be disposed on the wiring board 211. The liquid crystal panel 200 may include an alignment layer 221 on and below the liquid crystal layer 220 to initially align the liquid crystal material included therein. Details of the liquid crystal layer and the alignment layer (e.g., liquid crystal material, alignment layer material, method of forming the liquid crystal layer, thickness of the liquid crystal layer, etc.) are not particularly limited.

[0310] The lower polarizing plate 300 may be disposed below the lower substrate. The material and structure of the polarizing plate 300 are not particularly limited. A backlight unit (e.g., emitting blue light) may be disposed below the polarizing plate 300. The upper optical element or polarizing plate 300 may be disposed between the liquid crystal layer 220 and the transparent substrate 240, but is not limited thereto. For example, the upper polarizing plate may be disposed between the liquid crystal layer 220 and the photoluminescent layer 230. The polarizing plate may be any polarizing plate that may be used in a liquid crystal display device. The polarizing plate may be triacetyl cellulose (TAC) having a thickness of less than or equal to about 200 μm, but is not limited thereto. In another embodiment, the upper optical element may be a coating that controls the refractive index without a polarization function.

[0311] The backlight unit includes a light source 110. The light source may emit blue light or white light. The light source may include, but is not limited to, a blue LED, a white LED, a white OLED, or a combination thereof.

[0312] The backlight unit may further include a light guide plate 120. In one or more embodiments, the backlight unit may be an edge light type. For example, the backlight unit may include a reflector (not shown), a light guide plate (not shown) disposed on the reflector and providing a planar light source to the liquid crystal panel 200, and / or at least one optical sheet (e.g., a diffuser, a prism sheet, etc.) (not shown) on the light guide plate, but the present disclosure is not limited thereto. The backlight unit may not include a light guide plate. In one or more embodiments, the backlight unit may be a direct-type lighting. For example, the backlight unit may have a reflector (not shown) and a plurality of fluorescent lamps disposed on the reflector at regular intervals, or may have an LED working substrate, a plurality of light-emitting diodes, a diffuser plate on a plurality of light-emitting diodes, and optionally at least one optical sheet may be disposed on the LED working substrate. The details of such a backlight unit (e.g., each component of a light-emitting diode, a fluorescent lamp, a light guide plate, various optical sheets, and a reflector) are known and are not particularly limited.

[0313] The black matrix 241 may be disposed below the transparent substrate 240 and have an opening, and hide the gate lines, data lines, and thin film transistors of the wiring board on the lower substrate. For example, the black matrix 241 may have a grid shape. The photoluminescent layer 230 is disposed in the opening of the black matrix 241 and has a composite pattern, the composite pattern including a first region R configured to emit a first light (e.g., red light), a second region G configured to emit a second light (e.g., green light), and a third region B configured to emit / transmit a third light (e.g., blue light). If desired, the photoluminescent layer may further include at least one fourth region. The fourth region may include quantum dots that emit light of a color different from the color of the light emitted from the first region to the third region (e.g., cyan light, magenta light, and yellow light).

[0314] In the photoluminescent layer 230 , a portion where a pattern is formed may be repeated corresponding to a pixel region formed on the lower substrate. A transparent common electrode 231 may be disposed on the photoluminescent layer 230 .

[0315] The third region B configured to emit / transmit blue light may be a transparent color filter that does not change the emission spectrum of the light source. In this case, the blue light emitted from the backlight unit may enter in a polarized state and may be emitted as is through the polarizing plate and the liquid crystal layer. If desired, the third region may include quantum dots that emit blue light.

[0316] As described herein, if desired, the display device or the light-emitting device according to one or more embodiments may further include an excitation light blocking layer or a first filter layer (hereinafter, referred to as the first filter layer). The first filter layer may be disposed between the bottom surfaces of the first region R and the second region G and the substrate (e.g., the upper substrate 240) or on the upper surface of the substrate. The first filter layer may be a sheet having an opening in a portion corresponding to the pixel region (third region) displaying blue, and thus may be formed in a portion corresponding to the first region and the second region. That is, the first filter layer may be integrally formed at a position other than a position overlapping with the third region, such as Figure 3A , Figure 3B , Figure 6 and / or Fig. 7A As shown in, but not limited to this. Two or more first filter layers may be spaced apart from each other at positions overlapping the first region, the second region, and the optional third region. When the light source includes a green light emitting device, a green light blocking layer may be disposed on the third region.

[0317] The first filter layer may block light in a predetermined wavelength region, for example, in the visible light region, and may transmit light in other wavelength regions, and for example, it may block blue light (or green light) and may transmit light other than blue light (or green light). The first filter layer may transmit, for example, green light, red light, and / or yellow light as a mixed light thereof. The first filter layer may transmit blue light and block green light, and may be disposed on a blue light emitting pixel.

[0318] The first filter layer can substantially block the excitation light and transmit light in the desired wavelength region. The transmittance of the first filter layer for light in the desired wavelength range can be greater than or equal to about 70%, greater than or equal to about 80%, greater than or equal to about 90%, or even about 100%.

[0319] The first filter layer configured to selectively transmit red light may be disposed at a position overlapping the red light emitting portion, and the first filter layer configured to selectively transmit green light may be disposed at a position overlapping the green light emitting portion. The first filter layer may include: a first filter region that blocks (e.g., absorbs) blue light and red light and selectively transmits light in a predetermined range (e.g., greater than or equal to about 500 nm, greater than or equal to about 510 nm, or greater than or equal to about 515 nm and less than or equal to about 550 nm, less than or equal to about 545 nm, less than or equal to about 540 nm, less than or equal to about 535 nm, less than or equal to about 530 nm, less than or equal to about 525 nm, or less than or equal to about 520 nm); and a second ... In one or more embodiments, the light source may emit a mixed light of blue and green, and the first filter layer may further include a third filter region that selectively transmits blue light and blocks green light.

[0320] The first filter region may be disposed at a position overlapping the green light emitting portion. The second filter region may be disposed at a position overlapping the red light emitting portion. The third filter region may be disposed at a position overlapping the blue light emitting portion.

[0321] The first filter region, the second filter region and the optional third filter region may be optically isolated.Such a first filter layer may contribute to improving the color purity of the display device.

[0322] The display device may further include a second filter layer (e.g., a recycling layer of red / green or yellow light) that transmits at least a portion of the third light (excitation light) and reflects at least a portion of the first light and / or the second light, disposed between the photoluminescent layer and the liquid crystal layer (e.g., between the photoluminescent layer and the upper polarizer). The first light may be red light, the second light may be green light, and the third light may be blue light. The second filter layer may transmit only the third light (B) in the blue light wavelength region having a wavelength region less than or equal to about 500 nm, and light in a wavelength region greater than about 500 nm such as green light (G), yellow light, red light (R), etc. may not pass through the second filter layer but be reflected. The reflected green light and red light may pass through the first region and the second region and be emitted to the outside of the display device.

[0323] The second filter layer or the first filter layer may be formed as an integrated layer having a relatively flat surface.

[0324] The first filter layer may include a polymer film including a dye and / or a pigment that absorbs light of a wavelength to be blocked. The second filter layer or the first filter layer may include a single layer having a low refractive index, and may be, for example, a transparent film having a refractive index of less than or equal to about 1.4, less than or equal to about 1.3, or less than or equal to about 1.2. The second filter layer or the first filter layer having a low refractive index may include, for example, porous silicon oxide, porous organic material, porous organic-inorganic composite, etc., or a combination thereof.

[0325] The first filter layer or the second filter layer may include a plurality of layers having different refractive indices. The first filter layer or the second filter layer may be formed by laminating two layers having different refractive indices. For example, the first filter layer / the second filter layer may be formed by alternately laminating a material having a high refractive index and a material having a low refractive index.

[0326] In one or more embodiments, an electronic device may include a light emitting device (eg, an electroluminescent device) including the semiconductor nanoparticles described above. Figure 7B is a schematic cross-sectional view of a light emitting device (electroluminescent device) according to one or more embodiments. Figure 7B , the light emitting device includes an anode 710 and a cathode 750 facing each other, a quantum dot light emitting layer 730 disposed between the anode and the cathode and including a plurality of quantum dots, and a hole auxiliary layer 720 positioned between the anode and the quantum dot light emitting layer. The hole auxiliary layer may include a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), or a combination thereof. The hole auxiliary layer may include any organic / inorganic material having hole properties. The light emitting device may also include an electron auxiliary layer 740 positioned between the cathode and the quantum dot light emitting layer. The electron auxiliary layer may include an electron injection layer (EIL), an electron transport layer (ETL), a hole blocking layer (HBL), or a combination thereof. The electron auxiliary layer may include any organic / inorganic material having electronic properties.

[0327] Hereinafter, exemplary embodiments are explained in more detail with reference to examples. However, embodiments of the present disclosure are not limited to the examples.

[0328] Example

[0329] Analytical methods

[0330] [1] Photoluminescence analysis

[0331] Photoluminescence (PL) spectra of the fabricated semiconductor nanoparticles and composites including the semiconductor nanoparticles were obtained using a Hitachi F-7000 spectrophotometer at an excitation wavelength of 450 nm.

[0332] [2]ICP-AES analysis

[0333] Inductively coupled plasma atomic emission spectrometry (ICP-AES) was performed using Shimadzu ICPS-8100.

[0334] [3] Blue light absorption and photoconversion efficiency (CE) of the composite

[0335] The amount of incident light (B) of a wavelength of 450 nm is measured by using an integrating hemisphere of an absolute quantum efficiency measurement device (e.g., QE-2100, Otsuka Electronics Co., Ltd.). Subsequently, the composite is placed in the integrating hemisphere, and then, incident light is irradiated to measure the amount of first light from the composite (A) and the amount of incident light passing through the composite (B'), respectively.

[0336] Using the measured quantities, the incident light absorbance and light conversion efficiency were calculated according to the following equations.

[0337] Incident light absorption rate (%) = [(B-B') / B] × 100%

[0338] Photoconversion efficiency (%) = [A / (B-B')] × 100%

[0339] Among them, in the equation,

[0340] A is the amount of first light emitted from the composite,

[0341] B is the amount of incident light provided to the composite, and

[0342] B' is the amount of incident light that passes through the composite.

[0343] [4] Transmission electron microscopy (TEM) analysis and TEM-EELS (electron energy loss spectroscopy) analysis

[0344] Transmission electron microscopy analysis and TEM-EELS analysis of the fabricated semiconductor nanoparticles were performed using a UT F30 Tecnai electron microscope.

[0345] Reference Example 1:

[0346] Silver acetate was dissolved in oleylamine to prepare a solution containing 0.06 mole (M) of a silver precursor (hereinafter, referred to as a "silver precursor"). Sulfur was dissolved in oleylamine to prepare a solution containing 1M of a sulfur precursor (hereinafter, referred to as a "sulfur precursor"). Indium chloride was dissolved in ethanol to prepare a solution containing 1M of an indium precursor (hereinafter, referred to as an indium precursor).

[0347] Gallium acetylacetonate, octadecene (ODE) and dodecanethiol were placed in a 100 milliliter (mL) reaction flask and heated at 120°C for 10 minutes under vacuum. After the flask was cooled to room temperature and the gas inside the flask was replaced with nitrogen, a silver precursor, a sulfur precursor and an indium precursor were added to the flask, and then the flask was heated at a reaction temperature of 210°C for 60 minutes. After the temperature of the flask was lowered to 180°C, trioctylphosphine (TOP) was added thereto, hexane and ethanol were added to the obtained mixture to promote precipitation, and the precipitate (i.e., the first semiconductor nanocrystal) was separated by centrifugation.

[0348] The molar ratio between the indium precursor, the gallium precursor and the sulfur precursor as used is 1:2.3:4.8, and the mole number of the silver precursor is about 0.5 to about 1.2 relative to the indium precursor.

[0349] Gallium chloride was dissolved in toluene to prepare a solution containing 4.5 M of a gallium precursor (hereinafter, simply referred to as a gallium precursor).

[0350] Dimethylthiourea (DMTU) and oleylamine were placed in a reaction flask and then vacuum treated at 120 °C for 10 min. 2 After replacing the gas in the reaction flask and heating it at 240°C, the first semiconductor nanocrystal and gallium precursor obtained above are added thereto. Then, the reaction flask is heated to 280°C (second temperature) to perform the reaction for about 30 minutes (first time). The reaction solution is cooled to 180°C, trioctylphosphine is added thereto and cooled to room temperature. Hexane and ethanol are added thereto to precipitate semiconductor nanoparticles, which are recovered via centrifugation and redispersed in toluene.

[0351] For example, the molar ratio of the gallium precursor to the sulfur precursor used is 1.1:1.

[0352] ICP-AES analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 1. Photoluminescence analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 2.

[0353] Example 1

[0354] Zinc chloride was dissolved in trioctylphosphine (TOP) to prepare a solution containing 0.5M zinc precursor (hereinafter, abbreviated as "zinc precursor"). Gallium chloride was dissolved in toluene to prepare a solution containing 4.5M gallium precursor (hereinafter, abbreviated as gallium precursor).

[0355] Dimethylthiourea (DMTU) (sulfur precursor) was dissolved in oleylamine at a concentration of 0.12 M and placed in a 100 mL flask, and then vacuum treated at 120 °C for 10 min. 2 After replacing the gas inside the flask and heating the flask to 210°C, the first semiconductor nanocrystal prepared in Reference Example 1, as well as the zinc precursor and the gallium precursor were added thereto, and then reacted for 40 minutes. The reaction solution was cooled to 180°C, trioctylphosphine was added thereto, and then cooled to room temperature. Hexane and ethanol were added thereto to precipitate semiconductor nanoparticles, and the obtained semiconductor nanoparticles were recovered by centrifugation and redispersed in toluene.

[0356] The molar ratio of the zinc precursor to the sulfur precursor used is 1:4. The molar ratio of the zinc precursor to the gallium precursor used is 1:2.

[0357] The obtained semiconductor nanoparticles were subjected to ICP-AES analysis, and the results are shown in Table 1. The obtained semiconductor nanoparticles were subjected to photoluminescence analysis, and the results are shown in Table 2.

[0358] Example 2

[0359] Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that gallium fluoride (powder) was dissolved in oleylamine at a concentration of 0.0125 M with dimethylthiourea (DMTU) in a 100 mL flask and vacuumed at 120° C. for 10 minutes. The amount of the gallium fluoride precursor was 20% of the gallium precursor.

[0360] ICP-AES analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 1. Photoluminescence analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 2.

[0361] Example 3

[0362] A zinc precursor and a gallium precursor were prepared in the same manner as in Example 1. A solution containing a sulfur precursor (hereinafter, additional sulfur precursor) was prepared by dissolving DMTU in oleylamine.

[0363] Dimethylthiourea (DMTU) was dissolved in oleylamine at a concentration of 0.12 M and placed in a 100 mL flask, and then vacuum treated at 120 °C for 10 min. 2After replacing the gas inside the flask and heating the flask to 210° C., the first semiconductor nanocrystals prepared in Reference Example 1, as well as the zinc precursor and the gallium precursor were added thereto, and then reacted for 40 minutes. The molar ratio between the zinc precursor and dimethylthiourea used was 1:4. The molar ratio between the zinc precursor and the gallium precursor used was 1:2.

[0364] Subsequently, the zinc precursor and the additional sulfur precursor were added to the reaction system and the reaction was continued for 60 minutes. The molar ratio between the zinc precursor and the additional sulfur precursor used was 1:1. The molar ratio of the added zinc precursor to the initially injected zinc precursor was 1:1. The molar ratio of the added sulfur precursor to the initial sulfur precursor was 1:4.

[0365] ICP-AES analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 1. Photoluminescence analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 2.

[0366] Example 4

[0367] Semiconductor nanoparticles were prepared according to the same method as in Example 3, except that gallium fluoride (powder) (0.0125 M) was dissolved in oleylamine together with dimethylthiourea (DMTU) in a 100 mL flask and then vacuum treated at 120° C. for 10 minutes. The amount of gallium fluoride used was 20% of the gallium precursor.

[0368] ICP-AES analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 1. Photoluminescence analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Table 2.

[0369] TEM-EELS mapping analysis was performed on the obtained semiconductor nanoparticles, and the results are shown in Fig. 8A and Figure 8B In. From Fig. 8A and Figure 8B It was confirmed that the obtained semiconductor nanoparticles included silver, indium, gallium, and zinc, that indium existed more inside the semiconductor nanoparticles, and that the zinc content near the surface of the semiconductor nanoparticles was higher than that inside the semiconductor nanoparticles.

[0370] Experimental Example 1: Preparation of the composite and evaluation of its luminescent properties

[0371] [1] The toluene solution of the semiconductor nanoparticles prepared in each of Examples 1 to 4 was mixed with a binder (a tetrapolymer of methacrylic acid, benzyl methacrylate, hydroxyethyl methacrylate and styrene, with an acid value of 130 mgKOH / g and a molecular weight of 8000 g / mol) solution (in PGMEA, at a concentration of 30 wt%) to obtain a semiconductor nanoparticle-binder dispersion.

[0372] To each of the semiconductor nanoparticle-binder dispersions, hexaacrylate having the following structure as a photopolymerizable monomer, ethylene glycol bis(3-mercaptopropionate) (hereinafter, 2T), an oxime ester compound as an initiator, TiO 2 and PGMEA and mixed together to provide a composition.

[0373]

[0374]

[0375] The compositions thus prepared respectively included 20 wt % of semiconductor nanoparticles based on the total solid weight thereof.

[0376] Each composition was spin-coated on a glass substrate at 600 revolutions per minute (rpm) for 5 seconds to obtain a film. The film thus obtained was pre-baked (PRB) at 100° C. for two minutes. The pre-baked film was irradiated with light (at a wavelength of 365 nm and an intensity of 4 J) and then heated at 180° C. for 30 minutes to obtain a patterned film of the composite (having a thickness of about 7 μm).

[0377] Each of the patterned films thus obtained was kept in air at room temperature for 48 hours, and the relative luminous efficiency (stability) defined by the following formula was measured:

[0378] Relative luminous efficiency (%) = [luminous efficiency of the complex after 48 hours / initial luminous efficiency of the complex] × 100

[0379] And the results are shown in Table 2.

[0380] Table 1

[0381]

[0382] Relative molar value of Zn = [Zn] / ([Ag]+[In]+[Ga]+[Zn])

[0383] CBV (charge balance value) = {[Ag] + 3 × ([In] + [Ga]) + 2 × [Zn]} / (2 × [S])

[0384] Here, [Ag], [In], [Ga], [Zn], and [S] are the molar amounts of silver, indium, gallium, zinc, and sulfur in the semiconductor nanoparticles, respectively.

[0385] Table 2

[0386]

[0387] As confirmed from the results of Table 2, the exemplified semiconductor nanoparticles may exhibit improved stability (relative luminescence efficiency of the complex) without a significant increase in trap emission, and have significantly improved luminescence characteristics, compared to the reference examples.

[0388] While the disclosure has been described in conjunction with what are presently considered to be practical embodiments, it is to be understood that the present subject matter is not limited to the disclosed exemplary embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A semiconductor nanoparticle, comprising: a first semiconductor nanocrystal comprising silver, indium, gallium and sulfur; and a second semiconductor nanocrystal comprising zinc, gallium and sulfur, wherein the semiconductor nanoparticles are configured to emit green light, The green light has a peak emission wavelength greater than or equal to 500 nanometers and less than or equal to 580 nanometers, and In the semiconductor nanoparticles, a molar ratio of zinc to indium is greater than or equal to 0.1:1 and less than or equal to 10:

1.

2. The semiconductor nanoparticle according to claim 1, wherein: The semiconductor nanoparticles exhibit a relative molar value of zinc greater than or equal to 0.05 and less than or equal to 0.9, the relative molar value of zinc being defined by the following equation: Relative molar value of zinc = [Zn] / ([Ag]+[In]+[Ga]+[Zn]) Among them, in the equation, [Ag], [In], [Ga], and [Zn] are the molar numbers of silver, indium, gallium, and zinc in the semiconductor nanoparticles, respectively.

3. The semiconductor nanoparticle according to claim 1, wherein: In the semiconductor nanoparticles, a molar ratio of gallium to indium is greater than or equal to 2.5:1 and less than or equal to 10:

1.

4. The semiconductor nanoparticle according to claim 1, wherein: The semiconductor nanoparticles have a charge balance value greater than or equal to 0.9 and less than or equal to 1.2, the charge balance value being defined by the following equation: Charge balance value = {[Ag] + 3([In] + [Ga]) + 2[Zn]} / (2[S]) Wherein, in the above equation, [Ag], [In], [Ga], [Zn] and [S] are the molar numbers of silver, indium, gallium, zinc and sulfur in the semiconductor nanoparticles, respectively.

5. The semiconductor nanoparticle according to claim 1, wherein: In the semiconductor nanoparticles, The molar ratio of zinc to indium is greater than or equal to 0.5:1 and less than or equal to 5:1, and The molar ratio of the number of moles of gallium to the sum of the number of moles of indium and gallium is greater than or equal to 0.7:1 and less than or equal to 0.845:

1.

6. The semiconductor nanoparticle according to claim 1, wherein: In the semiconductor nanoparticles, The molar ratio of gallium to silver is greater than or equal to 1.1:1 and less than or equal to 3:1, or the molar ratio of the number of moles of gallium to the sum of the number of moles of gallium, indium and silver is greater than or equal to 0.45:1 and less than or equal to 0.6:1, or The molar ratio of the sum of the moles of indium and gallium to the mole of silver is greater than or equal to 1.4:1 and less than or equal to 3.7:

1.

7. The semiconductor nanoparticle according to claim 1, wherein: In the semiconductor nanoparticles, the molar ratio of the sum of the moles of indium and gallium to the moles of sulfur is greater than or equal to 0.2:1 and less than or equal to 0.8:1, or The molar ratio of silver to sulfur is greater than or equal to 0.2:1 and less than or equal to 0.5:

1.

8. The semiconductor nanoparticle according to claim 1, wherein: In the semiconductor nanoparticles, The molar ratio of the number of moles of silver to the sum of the number of moles of silver, indium and gallium is greater than or equal to 0.1:1 and less than or equal to 0.55:1, The molar ratio of the number of moles of sulfur to the sum of the number of moles of silver, indium and gallium is greater than or equal to 0.9:1 and less than or equal to 2.8:1, and The molar ratio of zinc to indium is greater than or equal to 0.8:1 and less than or equal to 3:

1.

9. The semiconductor nanoparticle according to claim 1, wherein: In the semiconductor nanoparticles, The molar ratio of the number of moles of sulfur to the sum of the number of moles of silver, indium, gallium and zinc is greater than or equal to 0.69:1 and less than or equal to 1.3:1, and The molar ratio of sulfur to indium is greater than or equal to 7:1 and less than or equal to 25:

1.

10. The semiconductor nanoparticle according to claim 1, wherein: The second semiconductor nanocrystal is disposed on the first semiconductor nanocrystal, and optionally, wherein the semiconductor nanoparticles further include a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising silver, gallium and sulfur and having a chemical composition different from the chemical composition of the first semiconductor nanocrystal, and the third semiconductor nanocrystal is disposed between the first semiconductor nanocrystal and the second semiconductor nanocrystal.

11. The semiconductor nanoparticle according to claim 1, wherein: The semiconductor nanoparticles further include a fourth semiconductor nanocrystal comprising zinc and sulfur and having a chemical composition different from the chemical composition of the second semiconductor nanocrystal, The second semiconductor nanocrystal is disposed between the fourth semiconductor nanocrystal and the first semiconductor nanocrystal.

12. The semiconductor nanoparticle of claim 1, wherein: The peak emission wavelength of the green light is greater than or equal to 520 nanometers and less than or equal to 540 nanometers.

13. The semiconductor nanoparticle according to claim 1, wherein: The semiconductor nanoparticles have a quantum yield greater than or equal to 70% and less than or equal to 99% and a full width at half maximum greater than or equal to 15 nanometers and less than or equal to 40 nanometers.

14. The semiconductor nanoparticle of claim 1, wherein: The semiconductor nanoparticles exhibit a trap emission percentage less than or equal to 25%, the trap emission percentage being defined by the following equation: Trap emission percentage (%) = [trap emission area in emission spectrum / total area of ​​emission spectrum]×100, wherein the trap emission area is the peak area with a wavelength greater than the emission peak wavelength plus 50 nanometers. 15 . A semiconductor nanoparticle composite, comprising a matrix and the semiconductor nanoparticles according to any one of claims 1 to 14 dispersed in the matrix.

16. The semiconductor nanoparticle composite according to claim 15, wherein: When exposed to air for 48 hours, the luminescence efficiency of the semiconductor nanoparticle composite is greater than or equal to 55% of the initial luminescence efficiency of the semiconductor nanoparticle composite.

17. A method for producing semiconductor nanoparticles according to any one of claims 1 to 14, the method comprising the following steps: In the presence of a first semiconductor nanocrystal comprising indium, gallium, silver and sulfur or a first particle comprising said one semiconductor nanocrystal, a zinc precursor, a gallium precursor and a sulfur precursor are combined in a reaction medium to form a second semiconductor nanocrystal comprising zinc, gallium and sulfur.

18. The method of claim 17, wherein: The method further includes adding the first semiconductor nanocrystals or the first particles and the zinc precursor to the reaction medium including the sulfur precursor and an organic solvent, and performing a reaction at a temperature greater than 180°C and less than 240°C.

19. The method of claim 17, wherein: The sulfur precursor includes a thiol compound, an isothiocyanate compound, a thiourea compound or a combination thereof, the gallium precursor includes a gallium halide, and the gallium halide includes gallium chloride and gallium fluoride, and the zinc precursor includes zinc halide.

20. An electronic device comprising the semiconductor nanoparticle according to any one of claims 1 to 14.

Images