Method for photoelectrolysis of water by non-metallic element doped fullerene composite bismuth vanadate

By using non-metallic element doping and hydrothermal in-situ growth of fullerenes, a uniform and dense catalyst layer was prepared, solving the problems of complex and costly preparation of existing photoelectrochemical water splitting catalysts and achieving efficient and stable photoelectrochemical water splitting catalytic performance.

CN119465274BActive Publication Date: 2025-12-19XI AN JIAOTONG UNIV +1
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Patent Information

Application Number
CN202411665188.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-11-20
Publication Date
2025-12-19
Estimated Expiration
2044-11-20

AI Technical Summary

Technical Problem

The preparation process of existing photoelectrochemical water splitting catalysts is complex and costly, and carbon-based materials do not fully utilize their electronic structure modification to improve photoelectrochemical catalytic activity.

Method used

Non-metallic element doping of fullerenes was carried out by chemical vapor deposition, combined with hydrothermal in-situ growth method, to prepare a non-metallic element doped fullerene composite bismuth vanadate photoelectrochemical water splitting catalyst on FTO substrate, forming a uniform and dense catalyst layer.

Benefits of technology

It simplifies the catalyst preparation process, reduces costs, improves photocurrent density and catalyst stability, and promotes the industrial application of photoelectrochemical water splitting technology.

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Abstract

The application belongs to the technical field of photoelectrolysis water material preparation, and relates to a method for preparing a non-metal element doped fullerene composite bismuth vanadate photoelectrolysis water, which comprises the following steps: s1, cleaning a conductive substrate; s2, performing non-metal element doping treatment on fullerene powder through a chemical vapor deposition method; s3, stirring modified fullerene after s2 treatment, a Bi source and a V source to prepare a catalyst slurry; s4, placing the conductive surface of the conductive substrate downward in the catalyst slurry, and performing hydrothermal in-situ growth to prepare a photoelectrocatalysis film; and s5, after natural cooling to room temperature, taking out the conductive substrate, and then heating and calcining to obtain a photoelectrolysis water electrode. The method is characterized in that the fullerene is doped with different metal elements through the chemical vapor deposition method, and then a uniform, dense and firm catalyst film is formed on the FTO through the hydrothermal in-situ growth method, and then a more stable and high-activity photoelectrolysis water electrode is obtained. The preparation method is simple, low in cost, and can realize large-scale electrode preparation.
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