Optical measurement device

Abstract

An optical measurement apparatus includes: a first light emitter configured to emit first light onto a surface of a sample; a second light emitter configured to emit a second light onto a surface of the sample on which the first light is incident; a physical property detector configured to: obtain physical property information of the sample by detecting a change in a light amount of the second light due to a photothermal effect of the first light on a surface of the sample; and at least one structure detector configured to obtain structure information of the sample by detecting reflected light of at least one of the first light and the second light reflected from a surface of the sample.

Description

[0001] This application is based on the priority of Korean Patent Application No. 10-2023-0104627 filed in the Korean Intellectual Property Office on August 10, 2023, the disclosure of which is incorporated herein by reference. Technical Field

[0002] The disclosed example embodiments relate to an optical measurement apparatus and an optical measurement method. Background Art

[0003] In semiconductor manufacturing, it may be necessary to obtain information about the properties of semiconductor materials in a sample (such as a wafer) during or after processing. Measurement equipment using Fourier transform infrared (FT-IR) spectroscopy can non-destructively examine the chemical composition of a sample (such as a wafer). Such FT-IR measurement equipment can examine the molecular composition of a sample by examining the spectrum to see what wavelengths of infrared light transmitted through the sample are absorbed. However, since FT-IR measurement equipment uses an infrared light source, the spatial resolution may be relatively low, making it difficult to measure defects that appear in tiny areas of a patterned wafer.

[0004] The information disclosed in this background technology section has been known or obtained by the inventor before or during the implementation of the embodiments of the present application, or is technical information obtained during the implementation of the embodiments. Therefore, it may contain information that does not form prior art known to the public. Summary of the invention

[0005] One or more example embodiments provide an optical measuring apparatus capable of obtaining chemical composition information and structural information of a sample using photothermal spectroscopy, and an optical measuring method using the optical measuring apparatus.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

[0007] According to one aspect of an example embodiment, an optical measurement device may include: a first light emitter configured to emit a first light onto a surface of a sample; a second light emitter configured to emit a second light onto a surface of the sample on which the first light is focused; a physical property detector configured to obtain physical property information of the sample by detecting a change in the amount of light of the second light caused by a photothermal effect of the first light on the surface of the sample; and at least one structure detector configured to obtain structural information of the sample by detecting reflected light of at least one of the first light and the second light reflected from the surface of the sample.

[0008] According to an aspect of an example embodiment, an optical measurement device may include: a stage configured to support a sample; a first light source configured to generate a first light having a first wavelength, the first light including a pulsed light; a second light source configured to generate a second light having a second wavelength shorter than the first wavelength; an illumination optical system configured to emit the first light and the second light onto a surface of the sample; a light receiving optical system configured to receive a first reflected light of the first light reflected from the surface of the sample and a second reflected light of the second light reflected from the surface of the sample; a physical property detector configured to obtain physical property information of the sample by detecting a change in a light amount of the second light caused by a photothermal effect of the first light on the surface of the sample; and at least one structure detector configured to obtain structure information of the sample by detecting at least one of the first reflected light and the second reflected light received by the light receiving optical system.

[0009] According to one aspect of an example embodiment, an optical measurement method may include: emitting a first light onto a surface of a sample; emitting a second light onto the surface of the sample on which the first light is focused; obtaining physical property information of the sample by detecting a change in the amount of light of the second light caused by a photothermal effect of the first light on the surface of the sample; and obtaining structural information of the sample by detecting reflected light of at least one of the first light and the second light reflected from the surface of the sample. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above aspects and other aspects, features and advantages of some specific example embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which: Figure 1 is a block diagram illustrating an optical measuring device according to one or more example embodiments; Figure 2 is a block diagram illustrating an optical measuring device according to one or more example embodiments; Figure 3 is a block diagram illustrating an optical measuring device according to one or more example embodiments; Figure 4 is a block diagram illustrating an optical measuring device according to one or more example embodiments; Figure 5 is a block diagram illustrating an optical measuring device according to one or more example embodiments; Figure 6 is a block diagram illustrating an optical measuring device according to one or more example embodiments; Figure 7 is a flow chart illustrating a method of analyzing physical properties using photothermal spectroscopy in an optical measurement method according to one or more example embodiments; Figure 8is a flow chart illustrating a method for analyzing physical properties using photothermal imaging in an optical measurement method according to one or more example embodiments; Fig. 9 is a flow chart illustrating a structural analysis method using an ellipsometer in an optical measurement method according to one or more example embodiments; Fig.10 is a diagram illustrating an absorption spectrum according to wavelength obtained by a physical property analysis method and an FT-IR spectrum according to wavelength obtained by FT-IR spectroscopy according to one or more example embodiments; and Fig.11 is a diagram illustrating a photothermal image obtained by a physical property analysis method according to one or more example embodiments. DETAILED DESCRIPTION

[0011] Hereinafter, the disclosed exemplary embodiments will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals are used for the same components, and their repeated descriptions will be omitted. The embodiments described herein are exemplary embodiments, and therefore, the disclosure is not limited thereto, and can be implemented in various other forms.

[0012] As used herein, when a statement such as "at least one of..." follows a list of elements, the statement modifies the entire list of elements and does not modify the individual elements in the list. For example, the statement "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0013] It will be understood that when an element or layer is referred to as being “on (above, over)”, “under (below, under)”, “connected to” or “coupled to” another element or layer, it can be directly on (above, over), directly under (below, under), connected to or coupled to the other element or layer, or one or more intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on (above, over)”, “directly under (below, under)”, “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0014] Figure 1 is a block diagram illustrating an optical measuring apparatus according to one or more example embodiments.

[0015] Reference Figure 1, the optical measurement device 10 may include: a first light emitter 102 configured to emit a first light 20 onto a surface of a sample (such as a wafer W); a second light emitter 104 configured to emit a second light 30 onto the surface of the wafer W; a physical property detector 200 configured to detect a change in the light amount of the second light 30 on the surface of the wafer W to obtain physical property information of the wafer W; and at least one structure detector configured to detect at least one reflected light 22, 32 from the first light 20 and the second light 30 from the surface of the wafer W to obtain structural information of the wafer W. In addition, the optical measurement device 10 may further include: a stage 50 configured to support the wafer W; a controller configured to control operations of the first light emitter 102, the second light emitter 104, the physical property detector 200 and the at least one structure detector; and a processor 60 configured to process detected signals.

[0016] In some example embodiments, the optical measurement device 10 may be a photothermal imaging spectrometer configured to obtain a photothermal image by scanning multiple points (rather than a single point) on a wafer surface. The optical measurement device 10 may include: a light source 100 configured to generate a first light 20 and a second light 30; an illumination optical system 1 configured to emit the first light 20 and the second light 30 to the same position on the surface of the wafer W; and a light receiving optical system 2 configured to collect reflected light of the first light 20 and the second light 30 from the surface of the wafer W. The illumination optical system 1 may include a set of components 112, 114, 116, 118, 120 (e.g., an optical device that combines the first light and the second light from the light source to the sample). The light receiving optical system 2 may include a set of components 130, 140 (e.g., an optical device that combines the reflected light of the first light and the second light from the sample to the detector). The physical property detector 200 may include a light detector 220 configured to detect the reflected light 32 of the second light 30 collected by the light receiving optical system 2. The at least one structure detector may include a light detector configured to detect at least one reflected light 22 or reflected light 32 among the first light 20 and the second light 30 collected by the light receiving optical system 2 .

[0017] The wafer W may be a semiconductor substrate. For example, the semiconductor substrate may be silicon, strained silicon (strained Si), silicon alloy, silicon carbide (SiC), silicon germanium (SiGe), silicon germanium carbide (SiGeC), germanium, germanium alloy, gallium arsenide (GaAs), indium arsenide (InAs), III-V semiconductor, II-VI semiconductor, and combinations thereof. In addition, if desired, the wafer may be an organic plastic substrate instead of a semiconductor substrate.

[0018] The wafer W may be supported on a stage 50. The stage 50 may move the wafer W to a specific position during a measurement process. For example, the optical measurement apparatus 10 may include a stage driver such as a stage scanner. The stage scanner may move the stage 50 in a first direction or a second direction perpendicular to the first direction to scan the first light 20 and the second light 30 on the wafer W. Alternatively, the optical measurement apparatus 10 may include a mirror scanner for scanning the wafer W. The mirror scanner may rotate an optical mirror by a predetermined angle to scan the first light 20 and the second light 30 on the wafer W.

[0019] In some example embodiments, the first light emitter 102 may include a first light source that generates the first light 20. The first light 20 may have a first wavelength in an infrared band. The first light 20 may have a wavelength in a mid-infrared (Mid-IR) band. The first light source may include a wavelength tunable laser. The tunable laser may select and output light having a specific wavelength in the infrared band. The first light 20 may include continuous light or pulsed light. When the first light 20 is continuous light, the first light emitter 102 may output light modulated at a specific frequency by a modulator. The first light emitter 102 may include a tunable mid-IR pulsed laser. For example, the first light emitter 102 may include a quantum cascade laser (QCL), an optical parametric oscillator (OPO), etc. The first light emitter 102 may change the wavelength of the first light 20 to find a wavelength absorbed by a material to be analyzed. The first light 20, which may be a pulsed light of a specific frequency, may be a pump beam that is emitted onto the surface of the wafer W and causes periodic local heating of the material to generate a thermal wave in the material.

[0020] The second light emitter 104 may include a second light source that generates the second light 30. The second light 30 may have a second wavelength in the visible light band or the ultraviolet band. The second light source may be a broadband light source (such as a visible light or ultraviolet laser). The second light emitter 104 may extract and output light of a specific wavelength in the broadband light. Alternatively, the second light source may be a narrowband light source having a specific wavelength. The second light 30 may be a probe beam for detecting optical properties of the wafer W. The second light 30 may detect the response of the wafer W to the incidence of the first light 20 as infrared light. The wavelength of the second light 30 may be fixed to a specific wavelength for spatial resolution.

[0021] like Figure 1As shown in FIG. 1 , the first light 20 as a pump beam emitted from the first light emitter 102 and the second light 30 as a probe beam emitted from the second light emitter 104 may share the illumination optical system 1 and may be incident on the surface of the wafer W through the illumination optical system 1. The illumination optical system 1 may include a tilted optical system that causes the first light 20 and the second light 30 to be obliquely incident on the surface of the wafer W (that is, the illumination optical system 1 may be configured to guide the light to be obliquely incident).

[0022] Specifically, the first light 20 emitted from the first light emitter 102 may be reflected by the mirror 112, may pass through the dichroic mirror 114, and then may be reflected by the reflection mirrors 116 and 118 and directed to the wafer W. The directed first light 20 may be incident (e.g., focused) on a region of interest on the surface of the wafer W through the objective lens 120. The second light 30 emitted from the second light emitter 104 may be reflected by the dichroic mirror 114 as a beam combiner, and may be moved along the optical path of the first light 20. Therefore, the first light 20 and the second light 30 may be incident obliquely at a predetermined angle relative to the surface of the wafer W.

[0023] The physical property detector 200 may include a light detector 220 configured to detect reflected light 32 of the second light 30 from the surface of the wafer W. The reflected light 32 reflected (or scattered) from the surface of the wafer W may be collected by the light detector 220. The light receiving optical system 2 may include a tilted optical system that collects the reflected light 32 obliquely reflected from the surface of the wafer W (that is, the illumination optical system 1 may be configured to guide the light to be obliquely incident).

[0024] The reflected light 32 reflected (or scattered) from the surface of the wafer W may be collected by the collecting lens 130 of the light receiving optical system 2, and the collected reflected light 32 may be reflected by the dichroic mirror 140 and then moved to the light detector 220 via the lens 210. For example, the light detector 220 may include a photodiode or a camera as a two-dimensional image sensor. The light detector 220 may detect the light intensity of the probe beam in the visible light band. When the first light emitter 102 includes a pump laser in the infrared region and the second light emitter 104 includes a probe laser in the visible light region, a spatial resolution of 1 μm or less may be provided according to the diffraction limit of the wavelength of the probe beam used. In addition, since the light detector 220 uses an ordinary photodiode instead of an infrared detector (infrared detection is expensive in cost and maintenance and has low sensitivity), the light detector 220 may have a relatively high sensitivity.

[0025] The optical detector 220 may further include a filter such as a lock-in amplifier. The optical detector 220 may be synchronized with the pulse light emitted from the first optical transmitter 102 through the lock-in amplifier. The optical detector 220 may detect the reflected light 32 of the second light 30 in the frequency pulse interval of the first light 20.

[0026] The detection signal detected by the light detector 220 may be input to the processor 60 , and the processor 60 may obtain an absorption spectrum in a specific area including pixels corresponding to the area of ​​interest on the surface of the wafer W based on the detection signal.

[0027] For example, when the first light 20, which may be an infrared pulse light having a specific wavelength (λ1), is emitted to the region of interest on the surface of the wafer W, the molecules on the surface of the wafer W may absorb the infrared light of the specific wavelength and may be excited, generating heat and causing changes in the refractive index (n), the extinction coefficient (k), etc. These changes may result in a path difference of the second light 30 emitted to the region of interest in the visible light region, and the light detector 220 may measure the path difference of the probe beam to check the degree of infrared absorption. The absorption spectrum based on wavelength may be obtained by measuring the change in the signal value of the reflected light 32 of the second light 30 while changing the wavelength in the infrared band of the first light 20. By changing the wavelength of the first light 20, the molecular composition excited at a specific wavelength in the mid-infrared range may be identified.

[0028] The first light 20 and the second light 30 of a specific wavelength can be emitted to multiple points on the surface of the wafer W by scanning on the wafer W, and the light detector 220 can obtain a two-dimensional photothermal image. The two-dimensional photothermal image can provide a structural image in space. Using a confocal microscope scanning system, a spatial resolution of 1 μm or less can be provided, while a sensitivity similar to that of Fourier transform infrared technology can be obtained. Therefore, the physical property detector 200 can detect chemical defects in a tiny area of ​​a patterned wafer.

[0029] At least one structure detector may include an ellipsometer (also known as an ellipsometer) 300 (e.g., Figures 1 to 4 ). At least one structure detector may include an ellipsometer 300 and a spectroscopic reflectometer 400 ( Figure 3 to Figure 4 ). At least one structure detector may include a spectral interferometer 500 (eg, Figure 5 to Figure 6 ). Those skilled in the art will appreciate that the at least one structure detector may include any one or all of the ellipsometer 300 , the spectroscopic reflectometer 400 , and the spectroscopic interferometer 500 .

[0030] In some example embodiments, at least one structure detector may include an ellipsometer 300 configured to measure a change in a polarization state of at least one light. The ellipsometer 300 may measure a change in a polarization property of the first light 20 as a pump beam to obtain structural information of a pattern on the surface of the wafer W. The ellipsometer 300 may include a polarization state generator 310 disposed on a path of the first light 20 incident at an angle relative to the surface of the wafer W, a polarization state analyzer 320 disposed on a path of the reflected light 22, and a light detector 330 configured to detect the reflected light 22 passing through the polarization state analyzer 320.

[0031] Specifically, the polarization state generator 310 may include a polarizer 312 and a compensator 314 provided in the illumination optical system 1. The first light 20 may pass through the polarizer 312 and the compensator 314, and may be emitted to a measurement region of the wafer W disposed on the stage 50.

[0032] The polarizer 312 can adjust the polarization direction of the incident light (ie, the first light 20). The polarizer 312 may include a rotating portion for adjusting the polarization direction and rotating at a first angle. The first angle of the polarizer 312 may be maintained to have a constant value. Optionally, the polarizer 312 may be electrically connected to a controller, and the controller may adjust the first angle of the polarizer 312.

[0033] The compensator 314 may adjust the phase difference of the first light 20. The compensator 314 may include a rotating portion and may rotate at a second angle. The compensator 314 may use the rotating portion to adjust the phase difference of the first light 20. The compensator 314 may be electrically connected to a controller. The controller may adjust the second angle of the compensator 314.

[0034] Therefore, the first light 20 having a specific wavelength generated from the first light emitter 102 may be emitted to a measurement region on the wafer W through the polarization state generator 310 .

[0035] The polarization state analyzer 320 may include an analyzer 322 disposed in the light receiving optical system 2. The polarization state analyzer 320 may further include a compensator 324. The reflected light 22 of the first light 20 reflected from the wafer W may be collected by the collecting lens 130 of the light receiving optical system 2, and the collected reflected light 22 may pass through the dichroic mirror 140 and then pass through the polarization state analyzer 320 to be moved to the light detector 330.

[0036] The analyzer 322 may adjust the polarization direction of the reflected light 22 reflected from the wafer W. The analyzer 322 may include a rotating portion and may rotate at a third angle. The analyzer 322 may be electrically connected to a controller. The controller may adjust the third angle of the analyzer 322. The analyzer 322 may transmit only a linear polarization component corresponding to the third angle.

[0037] For example, the light detector 330 may include a photodiode or a camera as a two-dimensional image sensor. The ellipsometer 300 may be a single wavelength ellipsometer (SWE) configured to detect the first light 20 having a specific wavelength in the mid-infrared band.

[0038] The measured variables measured by the ellipsometer 300 may include film thickness, critical dimension (CD), pattern height, groove, overlay, or defect. In the ellipsometer 300, when light having a polarization component passes through the wafer W, the reflectivity and phase value may change according to the polarization direction (p-wave, s-wave). The ellipsometer 300 can measure the electromagnetic field values ​​of the p-wave and the s-wave while changing the combination of the angle set of the polarizer angle and the analyzer angle. The first angle of the polarizer 312 can determine the polarization direction of the light incident on the wafer W, and the second angle of the compensator 314 can determine the phase difference between the p-wave and the s-wave. The third angle of the analyzer 322 can determine the polarization direction of the light incident on the light detector 330 after passing through the wafer W.

[0039] As described above, the optical measurement device 10 may include a physical property detector 200 and an ellipsometer 300, the physical property detector 200 being configured to detect a change in the amount of light of the second light 30 caused by the photothermal effect of the first light 20 on the surface of the wafer W to obtain physical property information on the surface of the wafer W, and the ellipsometer 300 being configured to detect the reflected light 22 of the first light 20 to obtain structural information about the surface of the wafer W.

[0040] The optical measurement device 10 can simultaneously obtain an infrared absorption spectrum and a short-wavelength ellipsometry spectrum of a wafer W when changing the wavelength of a pump beam in the mid-infrared region. When mid-infrared light is used for a short-wavelength ellipsometer, a wafer W having a high aspect ratio structure can be easily measured by increasing the penetration depth. A short-wavelength ellipsometer can have excellent long-term stability due to the use of a single wavelength of light. In addition, when combined with photothermal imaging technology, structural information and chemical composition information of the wafer W can be obtained simultaneously.

[0041] Figure 2 is a block diagram showing an optical measuring device according to one or more example embodiments. In addition to the configuration of the ellipsometer, the optical measuring device may be used with reference to Figure 1The described optical measuring devices are substantially the same or similar. Therefore, the same reference numerals may be used for the same elements or similar elements, and any further repeated explanations about the above elements may be omitted.

[0042] Reference Figure 2 , the ellipsometer 300 of at least one structure detector of the optical measurement device 11 can detect the reflected light 32 of the second light 30 to obtain structural information about the surface of the wafer W. The light detector 331 of the ellipsometer 300 may include a lens 332, a spectrometer 334 and a detection sensor 336. The spectrometer 334 may include an optical element (such as a prism and a grating). The detection sensor 336 may include a detection array that detects light intensity according to a position.

[0043] In some example embodiments, the second light 30 may be emitted to the measurement area of ​​the wafer W placed on the stage 50 through the polarization state generator 310, the reflected light 32 of the second light 30 reflected from the wafer W may be collected by the collecting lens 130 of the light receiving optical system 2, and the collected reflected light 32 may pass through the dichroic mirror 140, and then pass through the polarization state analyzer 320 to be moved to the photo detector 331. Then, the reflected light 32 may pass through the lens 332 of the photo detector 331, may be separated according to wavelengths by the spectrometer 334, and may then be detected by the detection sensor 336.

[0044] The second light emitter 104 may generate white light as a probe beam. A photothermal signal may be obtained by detecting the second light 30 having a specific wavelength in the visible light band. The ellipsometer 300 may obtain structural information about the surface of the wafer W by detecting the reflected light 32 of the second light 30 having a specific wavelength.

[0045] Figure 3 1 is a block diagram showing an optical measuring device according to one or more example embodiments. In addition to the configuration of the optical system and the attached spectroscopic reflectometer, the optical measuring device can be used with reference to Figure 1 The described optical measuring devices are substantially the same or similar. Therefore, the same reference numerals may be used for the same elements or similar elements, and any further repeated explanations about the above elements may be omitted.

[0046] Reference Figure 3 The optical measurement device 12 may include a physical property detector 200 and a structural detector having an ellipsometer 300 and a spectroscopic reflectometer 400, wherein the physical property detector 200 is configured to detect a change in the amount of light of the second light 30 caused by the photothermal effect of the first light 20 on the surface of the wafer W to obtain physical property information about the wafer surface; the ellipsometer 300 is configured to detect a change in the polarization state of the first light 20, and the spectroscopic reflectometer 400 is configured to measure the reflectivity of the second light 30 for each wavelength.

[0047] In some example embodiments, the first light 20 emitted from the first light emitter 102 may be directed to the tilted optical system 1a (or the illumination optical system 1a) by the mirror 112 and the reflectors 116 and 118. The directed first light 20 may be incident (e.g., focused) on a region of interest on the surface of the wafer W by the objective lens 120 of the tilted optical system 1a (i.e., the illumination optical system 1a may be configured to direct the light to be obliquely incident). The illumination optical system 1a may include a set of components 112, 116, 118, 120 (e.g., an optical device that combines the first light from the first light emitter to the sample). The second light 30 emitted from the second light emitter 104 may be reflected by the mirror 113 and directed to the vertical optical system 3 (i.e., the optical system may be configured to direct the light to be vertically incident). The vertical optical system 3 may include a set of components 113, 115, 117, 122 (e.g., an optical device that combines the second light from the second light emitter to the sample). The guided second light 30 may be incident (e.g., focused) onto a region of interest on the surface of the wafer W through the objective lens 122 of the vertical optical system 3. Therefore, the first light 20 may be incident on the surface of the wafer W at a predetermined angle through the tilted optical system, and the second light 30 may be incident perpendicularly to the surface of the wafer W through the vertical optical system 3.

[0048] The physical property detector 200 may include a first light detector 220R and / or a second light detector 220T, the first light detector 220R being used to detect reflected light 32 of the second light 30 from the surface of the wafer W, and the second light detector 220T being used to detect transmitted light 34 of the second light 30 having been transmitted through the wafer W. The reflected light 32 reflected from the surface of the wafer W may be collected by the objective lens 122, and the collected reflected light 32 may be reflected by the beam splitter 117 and guided to the first light detector 220R. The transmitted light 34 passing through the wafer W may be collected by the second light detector 220T through a collecting lens. For example, the first light detector 220R and the second light detector 220T may include a photodiode or a camera as a two-dimensional image sensor. The first light detector 220R and the second light detector 220T may detect the light intensity of the probe light beam in the visible light band.

[0049] In some example embodiments, the ellipsometer 300 may include a polarization state generator 310 disposed in a path of the first light 20 incident at an angle relative to the surface of the wafer W, a polarization state analyzer 320 disposed in a path of reflected light 22 of the first light 20 reflected from the surface of the wafer W, and a light detector 330 configured to detect the reflected light 22 having passed through the polarization state analyzer 320. The ellipsometer 300 may be a SWE for detecting the first light 20 having a specific wavelength in the mid-infrared band.

[0050] In some example embodiments, the spectroscopic reflectometer 400 may measure destructive interference and constructive interference of each wavelength caused by interference between the second light 30 incident on the surface of the wafer W and the reflected light 32 of the second light to determine the thickness. The reflected light 32 reflected from the surface of the wafer W may be collected by the objective lens 122, and the collected reflected light 32 may be reflected by the beam splitter 115 and directed to the spectroscopic reflectometer 400. The spectroscopic reflectometer 400 may include a lens 402, a spectrometer 404, and a detection sensor 406.

[0051] The spectroscopic reflectometer 400 may have lower sensitivity than the ellipsometer 300, and thus may have difficulty measuring a thickness of 50 nm or less, but it may be used when measuring the thickness of a relatively thick film. Therefore, the ellipsometer 300 and the spectroscopic reflectometer 400 may be compatible with each other. Alternatively, only the spectroscopic reflectometer 400 may be used as a structure detector, and the ellipsometer may be omitted.

[0052] Figure 4 1 is a block diagram showing an optical measuring device according to one or more example embodiments. In addition to the optical path of the first light, the optical path of the second light, and the configuration of the ellipsometer and the spectroscopic reflectometer, the optical measuring device can be used with reference Figure 3 The described optical measuring devices are substantially the same or similar. Therefore, the same reference numerals may be used for the same elements or similar elements, and any further repeated explanations about the above elements may be omitted.

[0053] Reference Figure 4 The optical measurement device 13 may include a physical property detector 200 and a structural detector having an ellipsometer 300 and a spectroscopic reflectometer 400, wherein the physical property detector 200 is configured to detect a change in the amount of light of the second light 30 caused by the photothermal effect of the first light 20 on the surface of the wafer W to obtain physical property information about the surface of the wafer W, the ellipsometer 300 is configured to measure a change in the polarization state of the second light 30, and the spectroscopic reflectometer 400 is configured to measure the reflectivity of the first light 20 for each wavelength.

[0054] In some example embodiments, the first light 20 emitted from the first light emitter 102 may be reflected by the mirror 112 and may be directed to the vertical optical system 3a (i.e., the optical system may be configured to direct the light to be vertically incident). The directed first light 20 may be incident (e.g., focused) on the region of interest on the surface of the wafer W by the objective lens 120. The second light 30 emitted from the second light emitter 104 may be directed to the tilted optical system 1b by the mirror 113 and the reflectors 116 and 118 (i.e., the illumination optical system 1b may be configured to direct the light to be obliquely incident). The illumination optical system 1b may include a set of components 113, 116, 118, 122 (e.g., an optical device that combines the second light from the second light emitter to the sample). The directed second light 30 may be incident (e.g., focused) on the region of interest on the surface of the wafer W by the objective lens 122 of the tilted optical system 1b. Therefore, the first light 20 may be vertically incident on the surface of the wafer W by the vertical optical system 3a, and the second light 30 may be tilted at a predetermined angle relative to the surface of the wafer W by the tilted optical system 1b. The vertical optical system 3a may include a set of components 112, 115, 120 (eg, optical devices that couple the first light from the first light emitter to the sample).

[0055] The physical property detector 200 may include a light detector 220 for detecting the reflected light 32 of the second light 30 from the surface of the wafer W. The reflected light 32 reflected (or scattered) from the surface of the wafer W may be collected by the collecting lens 130 of the light receiving optical system 2, and the collected reflected light 32 may be reflected by the dichroic mirror 140 and guided to the light detector 220 through the lens 210. For example, the light detector 220 may include a photodiode or a camera as a two-dimensional image sensor. The light detector 220 may detect the light intensity of the probe light beam in the visible light band.

[0056] The ellipsometer 300 may include a polarization state generator 310 disposed in a path of the second light 30 to be incident at an angle relative to the surface of the wafer W, a polarization state analyzer 320 disposed on a path of reflected light 32 of the second light 30 reflected from the surface of the wafer W, and a light detector 331 configured to detect the reflected light 32 having passed through the polarization state analyzer 320. The ellipsometer 300 may obtain structural information about the wafer surface by detecting the reflected light 32 of the second light 30 having a specific wavelength.

[0057] The spectroscopic reflectometer 400 may measure destructive interference and constructive interference for each wavelength due to interference between the first light 20 incident on the surface of the wafer W and the reflected light 22 of the first light to determine the thickness. The reflected light 22 reflected from the surface of the wafer W may be collected by the objective lens 120, and the collected reflected light 22 may be reflected by the beam splitter 115 and guided to the spectroscopic reflectometer 400.

[0058] The first light 20 may be incident vertically on the surface of the wafer W through the vertical optical system 3a (i.e., the optical system may be configured to guide the light to be incident vertically), and the first light 20 may be used as a pump beam for photothermal spectroscopy and may be used to measure thickness by the spectroscopic reflectometer 400. The second light 30 may be incident obliquely on the surface of the wafer W through the tilted optical system and may be used as a probe beam for photothermal spectroscopy and may be used for structural analysis by the ellipsometer 300.

[0059] Figure 5 is a block diagram showing an optical measurement device according to one or more example embodiments. In addition to the optical system and the additional spectral interferometer, the optical measurement device can be used with reference to Figure 1 The described optical measuring devices are substantially the same or similar. Therefore, the same reference numerals may be used for the same elements or similar elements, and any further repeated explanations about the above elements may be omitted.

[0060] Reference Figure 5 The optical measuring device 14 may include a physical property detector 200 and a structural detector having a spectral interferometer 500, wherein the physical property detector 200 is configured to detect a change in the light amount of the second light 30 caused by the photothermal effect of the first light 20 on the surface of the wafer W to obtain physical property information about the wafer surface, and the spectral interferometer 500 is configured to detect an interference signal between the first light 20 and the reflected light 22 of the first light 20 from the surface of the wafer W.

[0061] In some example embodiments, the first light 20 emitted from the first light emitter 102 may be reflected by the beam splitter 510 and may be directed to the vertical optical system 3b. The vertical optical system 3b may include a set of components 114, 120 (e.g., an optical device that combines the first light from the first light emitter to the sample). The directed first light 20 may be incident (e.g., focused) by the objective lens 120 onto an area of ​​interest on the surface of the wafer W. The second light 30 emitted from the second light emitter 104 may pass through the beam splitter 115, may be reflected by the dichroic mirror 114, and may move along the optical path of the first light 20. Therefore, the first light 20 and the second light 30 may be incident perpendicular to the surface of the wafer W.

[0062] The physical property detector 200 may include a first light detector 220R and / or a second light detector 220T, the first light detector 220R being used to detect reflected light 32 of the second light 30 from the surface of the wafer W, and the second light detector 220T being used to detect transmitted light 34 of the second light 30 having been transmitted through the wafer W. The reflected light 32 reflected from the surface of the wafer W may be collected by the objective lens 120, and the collected reflected light 32 may be first reflected by the dichroic mirror 114, secondly reflected by the beam splitter 115, and may be guided to the first light detector 220R. The transmitted light 34 passing through the wafer W may be collected to the second light detector 220T through a collecting lens. For example, the first light detector 220R and the second light detector 220T may include a photodiode or a camera as a two-dimensional image sensor. The first light detector 220R and the second light detector 220T may detect the light intensity of the probe light beam in the visible light band.

[0063] In some example embodiments, the spectroscopic interferometer 500 may include a Michelson interferometer having a beam splitter 510, a reference mirror 520, and a light detector 530. Specifically, the spectroscopic interferometer 500 may include a beam splitter 510 for separating the first light 20 into two lights that travel along a measurement path toward the surface of the wafer W and a reference path toward the reference mirror 520, respectively. The spectroscopic interferometer 500 may also include a reference mirror 520 for reflecting the light traveling along the reference path back to the beam splitter 510, and a light detector 530 for detecting an interference signal between “reflected light 22 of the first light 20 incident on the beam splitter 510 after moving along the measurement path and reflecting from the surface of the wafer W” and “reflected light (i.e., the first light 20) reflected from the reference mirror 520”.

[0064] The final interference signal measured by the light detector 530 may include a mixture of interference signals between the reflected light of the first light 20 reflected from the reference mirror 520 and the reflected light 22 reflected at various positions in the wafer W, the spectral signal may be Fourier transformed, and the peak signal may be analyzed to obtain structural information (such as the depth within a pattern on the surface of the wafer W).

[0065] The first light 20 (e.g., a pump beam) may be incident vertically on the surface of the wafer W and may be used as a pump beam for photothermal spectroscopy and may be used for structural analysis of the spectral interferometer 500. The second light 30 (e.g., a probe beam) may be incident vertically on the surface of the wafer W and may be used as a probe beam for photothermal spectroscopy.

[0066] Figure 61 is a block diagram showing an optical measuring device according to one or more example embodiments. In addition to the configuration of the optical path of the first light and the optical path of the second light and the spectral interferometer, the optical measuring device may be used in conjunction with a reference Figure 5 The described optical measuring devices are substantially the same or similar. Therefore, the same reference numerals may be used for the same elements or similar elements, and any further repeated explanations about the above elements may be omitted.

[0067] Reference Figure 6 The optical measuring device 15 may include a physical property detector 200 and a structural detector having a spectral interferometer 500, wherein the physical property detector 200 is configured to detect a change in the amount of light of the second light 30 caused by the photothermal effect of the first light 20 on the surface of the wafer W to obtain physical property information about the wafer surface, and the spectral interferometer 500 is configured to detect an interference signal between the second light 30 and the reflected light 32 of the second light 30 from the surface of the wafer W.

[0068] In some example embodiments, the first light 20 emitted from the first light emitter 102 may be reflected by the dichroic mirror 114 and may be directed to the vertical optical system 3c (i.e., the optical system may be configured to direct the light to be incident vertically). The vertical optical system 3c may include a set of components 114, 115, 120 (e.g., an optical device that combines the first light from the first light emitter to the sample). The directed first light 20 may be incident (e.g., focused) by the objective lens 120 onto a region of interest on the surface of the wafer W. The second light 30 emitted from the second light emitter 104 may be reflected by the beam splitter 510, may pass through the dichroic mirror 114, and move along the optical path of the first light 20. Therefore, the first light 20 and the second light 30 may be incident vertically to the surface of the wafer W.

[0069] The physical property detector 200 may include a first light detector 220R and / or a second light detector 220T, the first light detector 220R being used to detect reflected light 32 of the second light 30 from the surface of the wafer W, and the second light detector 220T being used to detect transmitted light 34 of the second light 30 having been transmitted through the wafer W. The reflected light 32 reflected from the surface of the wafer W may be collected by the objective lens 120, and the collected reflected light 32 may be reflected by the beam splitter 115 and may be guided to the first light detector 220R. The transmitted light 34 that has passed through the wafer W may be moved to the second light detector 220T by a condenser lens. For example, the first light detector 220R and the second light detector 220T may include a photodiode or a camera as a two-dimensional image sensor. The first light detector 220R and the second light detector 220T may detect the light intensity of the probe light beam in the visible light band.

[0070] In some example embodiments, the spectroscopic interferometer 500 may include a Michelson interferometer having a beam splitter 510, a reference mirror 520, and a light detector 531. Specifically, the spectroscopic interferometer 500 may include a beam splitter 510 for separating the second light 30 into two lights respectively traveling along a measurement path toward the surface of the wafer W and a reference path toward the reference mirror 520. The spectroscopic interferometer 500 may include a reference mirror 520 for reflecting the light traveling along the reference path back to the beam splitter 510, and a light detector 531 for detecting an interference signal between “reflected light 32 of the second light 30 incident on the beam splitter 510 after moving along the measurement path and reflecting from the surface of the wafer W” and “reflected light (i.e., the second light 30) reflected from the reference mirror 520”. The light detector 531 of the spectroscopic interferometer 500 may include a lens 532, a spectrometer 534, and a detection sensor 536.

[0071] The first light 20 can be incident vertically on the surface of the wafer W to be used as a pump beam for photothermal spectroscopy. The second light 30 can be incident vertically on the surface of the wafer W to be used as a probe beam for photothermal spectroscopy and can be used for structural analysis by the spectral interferometer 500 at the same time.

[0072] Hereinafter, an optical measuring method using the optical measuring device will be described.

[0073] Figure 7 is a flow chart illustrating a method of analyzing physical properties using photothermal spectroscopy in an optical measurement method according to one or more embodiments.

[0074] Reference Figures 1 to 7 In operation S10, a first light 20 may be emitted onto a sample such as a wafer W, and then, in operation S20, a second light 30 may be emitted onto the sample such as a wafer W. The first light 20 may include a pump beam, and the second light 30 may include a probe beam.

[0075] In some example embodiments, after the wafer W is placed on the stage 50, the first light 20, which is pulse light of a specific frequency, may be emitted onto a detection area on the surface of the wafer W, and the second light 30 may be emitted onto the detection area on the surface of the wafer W to which the first light 20 is emitted. For example, the first light 20 may have a first wavelength in an infrared band, and the second light 30 may have a second wavelength in a visible light band or an ultraviolet light band.

[0076] The first light 20, which may be a pulsed light of a specific frequency, may be a pump beam that causes periodic local heating of a material on the surface of the wafer W and generates a thermal wave in the material. The second light 30 may be a probe beam that can detect the response of the material to the incidence of the first light 20, which may be infrared light. The wavelength of the second light 30 may be fixed to a specific wavelength for spatial resolution.

[0077] Reflected light 32 of the second light 30 (which may be a probe beam) may be collected and analyzed in operation S30 , and a photothermal signal may be detected (or calculated) in operation S40 .

[0078] In some example embodiments, the reflected light 32 reflected (or scattered) from the surface of the wafer W may be collected by the collecting lens 130, and the collected reflected light 32 may be detected by the light detector 220 of the physical property detector 200. For example, the light detector 220 may include a photodiode or a camera as a two-dimensional image sensor. The light detector 220 may also include a filter (such as a lock-in amplifier). The light detector 220 may be synchronized with the pulse light emitted from the first light emitter 102 through the lock-in amplifier.

[0079] The detection signal detected by the light detector 220 may be input to the processor 60, and the processor 60 may calculate a photothermal signal based on the detection signal. For example, when the first light 20, which may be an infrared pulse light having a specific wavelength (λ1), is emitted to the detection area on the surface of the wafer W, the molecules on the surface of the wafer W may absorb the infrared light of the specific wavelength and may become excited, generate heat and cause changes in the refractive index (n), the extinction coefficient (k), etc. These changes may result in a path difference of the second light 30 emitted into the visible light region of the region of interest, and the light detector 220 may measure the path difference of the detection beam to determine the degree of infrared absorption.

[0080] In operation S50 , the wavelength of the first light 20 , which may be a pump beam, may be changed, and operations S10 to S40 may be repeatedly performed to obtain an absorption spectrum based on the wavelength in operation S60 .

[0081] While changing the wavelength λ1 in the infrared band of the first light 20, the change in the signal value of the reflected light 32 of the second light 30 can be measured to obtain a wavelength-based absorption spectrum. By changing the wavelength of the first light 20, the molecular composition excited at a specific wavelength in the mid-infrared range can be identified.

[0082] Figure 8 is a flow chart illustrating a method of analyzing physical properties using photothermal imaging in an optical measurement method according to one or more embodiments.

[0083] Reference Figure 8 , executable and reference Figure 7 The same or similar processes as those described in operations S10 to S40 are performed to detect the light intensity of the second light 30 (eg, the probe light beam) through the photothermal effect of the first light 20 (eg, the pump light beam) having a specific wavelength (λ1).

[0084] In operation S52 , the stage 50 may be moved to scan the first light 20 and the second light 30 on the wafer W, and operations S10 to S40 may be repeatedly performed to obtain a photothermal image in operation S61 .

[0085] For example, the stage 50 may be moved in a first direction or a second direction perpendicular to the first direction by a stage scanner to scan the wafer W with the first light 20 and the second light 30. Alternatively, the optical measurement apparatus 10 may include a mirror scanner for scanning the wafer W. The mirror scanner may scan the first light 20 and the second light 30 on the wafer W by rotating an optical mirror by a predetermined angle.

[0086] The first light 20 and the second light 30 having a specific wavelength λ1 can be emitted to multiple points on the surface of the wafer W by scanning the wafer W, and the light detector 220 can obtain a two-dimensional photothermal image. The two-dimensional photothermal image can provide a structural image in space. Using a confocal microscope scanning system, a spatial resolution of 1 μm or less can be provided, while a sensitivity similar to that of Fourier transform infrared technology can be obtained. Therefore, the physical property detector 200 can detect chemical defects in a tiny area of ​​a patterned wafer.

[0087] Fig. 9 is a flow chart illustrating a structural analysis method using an ellipsometer in an optical measurement method according to one or more embodiments.

[0088] Reference Figure 1 , Figure 3 and Fig. 9 , executable and reference Figure 7 The same or similar processes as those described in operations S10 and S20 may be performed to emit the first light 20 (e.g., a pump beam) and the second light 30 (e.g., a probe beam) onto a sample (e.g., a wafer W) (operations S10, S20), and the reflected light 22 of the first light 20 (e.g., the pump beam) may be collected and analyzed in operation S32.

[0089] In some example embodiments, the first light 20 emitted from the first light emitter 102 may be emitted to the measurement area of ​​the wafer W through the polarization state generator 310, the reflected light 22 of the first light 20 reflected from the wafer W may be collected by the collection lens 130, and the collected reflected light 32 may pass through the polarization state analyzer 320 and then be guided to the light detector 330. The light detector 330 may include a photodiode or a camera as a two-dimensional image sensor.

[0090] In operation S34, the polarization state of the first light 20 may be changed. Operations S10 to S32 may be repeatedly performed to detect the reflected light 32 of the first light 20 having the specific wavelength λ1, and the amplitude ratio and the phase difference may be measured in operation S42.

[0091] When the first light 20 having a polarization component passes through the wafer W, the reflectivity and phase value may change according to the polarization direction (p-wave, s-wave). The structure detector (e.g., ellipsometer 300) may measure the electromagnetic field values ​​of the p-wave and the s-wave while changing the combination of the angle set of the polarizer angle and the analyzer angle. The first angle of the polarizer 312 may determine the polarization direction of the light incident on the sample, and the second angle of the compensator 314 may determine the phase difference between the p-wave and the s-wave. The third angle of the analyzer 322 may determine the polarization direction of the light incident on the light detector 330 after passing through the sample.

[0092] The wavelength of the first light 20 , which may be a pump beam, may be changed in operation S54 . Operations S10 , S20 , S32 , and S42 may be repeatedly performed to calculate a thickness and a critical dimension (CD) of a pattern on a surface of the wafer W in operation S62 .

[0093] The measurement variables measured by the structure detector (eg, ellipsometer 300) may include CD, pattern height, grooves, registration, or defects. For example, processor 60 may include a data analyzer or an optical CD (OCD) instrument including a spectral recognition algorithm.

[0094] like Fig. 9 As shown in , the ellipsometer can obtain the structural information of the sample by measuring the change of the polarization state of the first light 20 as the pump beam. Figure 2 and Figure 4 As shown in , the ellipsometer can obtain structural information of the sample by measuring the change in the polarization state of the second light 30 as the probe beam.

[0095] Fig.10 is a graph illustrating an absorption spectrum based on wavelength obtained by a physical property analysis method and an FT-IR spectrum based on wavelength obtained by FT-IR spectroscopy according to one or more example embodiments. Fig.11 is a diagram illustrating a photothermal image obtained by a physical property analysis method according to one or more example embodiments. Fig.10 The curve graph and Fig.11 The photothermal images were obtained by placing a sample containing polystyrene beads on Figure 5 The optical signal is obtained from the photothermal signal on the stage 50 and detected using the second photodetector 220T.

[0096] Reference Fig.10, a wavelength-based spectrum (photothermal (PT) spectrum, graph B) can be obtained from the photothermal signal detected by the second photodetector 220T for the sample containing polystyrene beads. A wavelength-based spectrum (FT-IR spectrum, graph A) can be obtained by FT-IR spectroscopy. It can be seen that the PT spectrum can be the same or similar to the FT-IR spectrum result. It can be seen that the wave number of the infrared pulsed pump beam that excites the aromatic C=C extension of the polystyrene beads is 1600 cm -1 At this time, the wavelength of the probe beam is 633nm, and sub-μm spatial resolution can be provided according to the diffraction limit of the probe beam.

[0097] Reference Fig.11 , when the wave number of the pump beam is fixed to a specific wave number (1600 cm -1 ), the pump and probe beams can be scanned to illuminate multiple points on the sample surface to obtain a two-dimensional photothermal image. -1 The infrared pump (which is absorbed by the polystyrene beads and generates heat) is obtained Fig.11 images, and when using wavelengths that are not absorbed (e.g., 1700cm -1 ), it can be seen that since there is no difference in the path of the light beam, no image of the bead appears.

[0098] As described above, the first light 20, which may be a pump light beam, may be incident on the surface of the wafer W to heat the surface, and the second light 30, which may be a probe light beam, may be incident on the wafer W on which the first light 20 is incident (e.g., focused). By detecting a change in the light amount of the second light 30 due to the photothermal effect of the first light 20 on the surface of the wafer W, physical property information of the wafer W may be obtained. By detecting at least one reflected light from the first light 20 and the second light 30 from the surface of the wafer W, structural information of the wafer W may be obtained.

[0099] By measuring the change in the signal value of the reflected light 32 of the second light 30 in the visible light region, the wavelength-based absorption spectrum of the first light 20 in the infrared wavelength can be obtained. Therefore, a spatial resolution of 1 μm or less can be provided, and at the same time, a sensitivity similar to that of the Fourier transform infrared technique can be obtained.

[0100] Furthermore, the thickness or CD of the pattern on the wafer W may be measured by detecting at least one reflected light from among the first light 20 and the second light 30. Therefore, physical property measurement and structure measurement may be performed simultaneously.

[0101] The above-mentioned optical measurement equipment and optical measurement method can be used to manufacture semiconductor packages including semiconductor devices (such as logic devices or memory devices). The semiconductor package may include a logic device (such as a central processing unit (CPU), a main processor (MPU), an application processor (AP), etc.), and a volatile memory device (such as a dynamic random access memory (RAM) (DRAM) device, a high bandwidth memory (HBM) device) or a non-volatile memory device (such as a flash memory device, a phase change RAM (PRAM) device, a magnetoresistive RAM (MRAM) device, a resistive RAM (ReRAM) device, etc.).

[0102] According to example embodiments, a change in the signal value of the reflected light of the second light in the visible light region can be measured to obtain a wavelength-based absorption spectrum of the first light in the infrared wavelength. Therefore, a spatial resolution of 1 μm or less can be provided, and at the same time, a sensitivity similar to that of the Fourier transform infrared technology can be obtained.

[0103] Furthermore, the thickness or CD of the pattern on the wafer can be measured by detecting the reflected light of at least one of the first light and the second light. Therefore, physical property measurement and structure measurement can be performed simultaneously.

[0104] Including but not limited to Figures 1 to 6 At least one of the devices, units, components, modules, units, etc. represented by boxes or equivalent indications in the above embodiments may be physically implemented by analog and / or digital circuits, which include one or more of logic gates, integrated circuits, microprocessors, microcontrollers, memory circuits, passive electronic components, active electronic components, optical components, etc., and may also be implemented or driven by software and / or firmware (configured to perform the functions or operations described herein).

[0105] Each embodiment provided in the above description is not exclusive of being associated with one or more features of another example or another embodiment also provided herein, or being associated with one or more features of another example or another embodiment not provided herein but consistent with the disclosure.

[0106] While the disclosure has been particularly shown and described with reference to disclosed embodiments, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the appended claims.

Claims

1. An optical measuring device, comprising: a first light emitter configured to emit a first light onto a surface of the sample; a second light emitter configured to emit a second light onto a surface of the sample on which the first light is incident; a physical property detector configured to obtain physical property information of the sample by detecting a change in the light amount of the second light caused by a photothermal effect of the first light on the surface of the sample; as well as At least one structure detector is configured to obtain structure information of the sample by detecting reflected light of at least one of the first light and the second light reflected from the surface of the sample.

2. The optical measuring device according to claim 1, wherein: The first light has a first wavelength in the infrared band, The second light has a second wavelength in the visible light band or the ultraviolet light band.

3. The optical measuring device according to claim 1, wherein: The first light includes pulsed light.

4. The optical measuring device according to claim 1, wherein: The at least one structure detector comprises an ellipsometer configured to measure a change in a polarization state of the reflected light reflected from a surface of the sample.

5. The optical measuring device according to claim 4, wherein: Ellipsometers include: a polarization state generator located in a path of at least one of the first light and the second light incident at an angle relative to a surface of the sample; a polarization state analyzer located in the path of the reflected light reflected from the surface of the sample; and The light detector is configured to detect the reflected light having passed through the polarization state analyzer.

6. The optical measuring device according to claim 1, wherein: The at least one structure detector includes a spectroscopic reflectometer configured to measure a reflectivity of at least one of the first light and the second light for each wavelength.

7. The optical measuring device according to claim 6, wherein: The spectroscopic reflectometer is further configured to detect an interference signal between at least one of the first light and the second light perpendicularly incident on the surface of the sample and the reflected light reflected from the surface of the sample.

8. The optical measuring device according to claim 1, wherein: The at least one structure detector includes a spectral interferometer configured to detect an interference signal between at least one of the first light and the second light and the reflected light reflected from a surface of the sample.

9. The optical measuring device according to claim 8, wherein: The spectral interferometer includes: a beam splitter configured to separate at least one of the first light and the second light into a first separated light traveling along a measurement path toward the surface of the sample and a second separated light traveling along a reference path; a reference mirror configured to reflect the second separated light traveling along the reference path back to the beam splitter; and A light detector is configured to detect an interference signal between the first separated light reflected from the surface of the sample and incident on the beam splitter and the second separated light reflected from the reference mirror.

10. The optical measuring device according to any one of claims 1 to 9, wherein: The first light emitter is also configured to emit first light of a specific frequency to a plurality of points on the surface of the sample, The physical property detector is further configured to obtain a two-dimensional photothermal image of the sample.

11. An optical measuring device comprising: a stage configured to support a sample; A first light source configured to generate first light having a first wavelength, the first light comprising pulsed light; a second light source configured to generate second light having a second wavelength shorter than the first wavelength; an illumination optical system configured to emit the first light and the second light onto a surface of the sample; a light receiving optical system configured to receive first reflected light of the first light reflected from the surface of the sample and second reflected light of the second light reflected from the surface of the sample; a physical property detector configured to obtain physical property information of the sample by detecting a change in the light amount of the second light caused by a photothermal effect of the first light on the surface of the sample; as well as At least one structure detector is configured to obtain structural information of the sample by detecting at least one of the first reflected light and the second reflected light received by the light receiving optical system.

12. The optical measuring device according to claim 11, wherein: The physical property detector is further configured to detect second reflected light of the second light in synchronization with the pulsed light.

13. The optical measuring device according to claim 11, wherein: The physical property detector includes a light detector configured to detect a second reflected light of a second light from a surface of the sample, The illumination optical system is configured to guide the second light to be incident on the surface of the sample at an angle, or is configured to guide the second light to be incident on the surface of the sample at a vertical angle.

14. The optical measuring device according to claim 11, wherein: the physical property detector includes a light detector configured to detect transmitted light of the second light that has been transmitted through the sample, Wherein, the illumination optical system is configured to guide the second light to be vertically incident on the surface of the sample.

15. The optical measuring device according to claim 11, wherein: The at least one structure detector comprises an ellipsometer configured to measure a change in a polarization state of at least one of the first light and the second light, Therein, the illumination optical system is configured to guide at least one of the first light and the second light to be incident obliquely on the surface of the sample.

16. The optical measuring device according to claim 15, wherein: Ellipsometers include: Polarization state generator; a polarization state analyzer; and The light detector is configured to detect at least one of the first reflected light and the second reflected light having passed through the polarization state analyzer.

17. The optical measuring device according to claim 11, wherein: The at least one structure detector includes a spectroscopic reflectometer configured to measure a reflectivity of at least one of the first light and the second light for each wavelength, The illumination optical system is configured to guide at least one of the first light and the second light to be vertically incident on the surface of the sample.

18. The optical measuring device according to claim 11, wherein: The at least one structure detector includes a spectral interferometer configured to detect an interference signal between at least one of the first light and the second light and at least one of the first reflected light and the second reflected light reflected from the surface of the sample, Wherein, the illumination optical system is configured to guide the at least one of the first light and the second light to be vertically incident on the surface of the sample.

19. The optical measuring device according to claim 18, wherein: The spectral interferometer includes: a beam splitter configured to separate at least one of the first light and the second light into a first separated light traveling along a measurement path toward the surface of the sample and a second separated light traveling along a reference path; a reference mirror configured to reflect the second separated light traveling along the reference path back to the beam splitter; and A light detector is configured to detect an interference signal between the first separated light reflected from the surface of the sample and incident on the beam splitter and the second separated light reflected from the reference mirror.

20. The optical measuring device according to any one of claims 11 to 19, wherein: The stage can move in the horizontal direction. The physical property detector is further configured to obtain a two-dimensional photothermal image of the sample.

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