Method for repairing long and narrow concave defect on photomask substrate
By positioning the narrow and long depression defect position on the photocoat substrate, the repair material is placed on the surface of the defect position, and bombarding the repair material with an energy source to sink into the depression defect, it is solved by the difficulty of repairing deep and wide depressions in the prior art. The defects have achieved the effect of reducing the scrap rate and production cost of the mask substrate.
Patent Information
- Application Number
- CN202411933780.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2025-02-18
AI Technical Summary
The prior art is difficult to repair the narrow and long depression defects on the mask substrate with a relatively large depth and width, resulting in the scrapping of the mask substrate and increasing the cost of raw materials and production cycles.
By positioning the narrow and long depression defect location on the photocoat substrate, the repair material is placed on the surface of the defect location and bombarding the repair material with an energy source (such as a laser, ion beam or electron beam) to sink into the depression defect.
This method can effectively repair the narrow and long depression defects on the mask substrate with a relatively large depth and width, reduce the scrap rate of the mask substrate, reduce production costs, and shorten the production cycle.
Smart Images
Figure CN119472158A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of mask processing, and in particular to a method for repairing narrow and long concave defects on a mask substrate. Background Art
[0002] A mask is a tool that uses photoetching technology to form graphics on semiconductors. Its function is to transfer the designed circuit pattern to the wafer and achieve accurate replication of the graphics through photoetching technology. It plays a key role in the semiconductor manufacturing process.
[0003] In the photomask manufacturing process, when a concave defect is detected on the photomask substrate, the concave defect needs to be repaired first, and the subsequent process can only be carried out after the light intensity at the defect position on the photomask substrate reaches the requirement. The prior art method for repairing concave defects is to deposit repair materials into the concave defects, and then perform light intensity detection on the photomask substrate. If the light intensity at the defect position meets the requirement, the subsequent process is carried out; if the light intensity at the defect position cannot meet the requirement, the photomask substrate is scrapped. However, when the depth and width of the concave defect are relatively large, it is difficult to fill the repair material into the concave defect using the existing repair method, and the photomask substrate can only be scrapped, which leads to an increase in raw material costs and an extension of the mask production cycle. Summary of the invention
[0004] The purpose of the present application is to provide a method for repairing narrow and long concave defects on a mask substrate in response to the deficiencies in the above-mentioned prior art, which can repair concave defects with a large depth-to-width ratio on the mask substrate, reduce the scrap rate of the mask substrate, thereby reducing the production cost of the mask and shortening the production cycle.
[0005] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
[0006] An embodiment of the present application provides a method for repairing a narrow and long concave defect on a mask substrate, comprising: providing a mask substrate to be repaired, and locating a defect position where the narrow and long concave defect exists on the mask substrate; setting a repair material on the surface of the defect position; and bombarding the repair material with an energy source to make the repair material sink into the narrow and long concave defect.
[0007] Optionally, after bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes: performing light intensity detection on the repaired narrow and long concave defect.
[0008] Optionally, if the light intensity of the narrow and long concave defect is outside the preset light intensity range, the method also includes: setting the repair material on the surface of the defect position again; bombarding the repair material with an energy source to make the repair material sink into the narrow and long concave defect.
[0009] Optionally, the method for repairing the long and narrow concave defects on the mask substrate includes: providing a mask substrate to be repaired, and locating multiple defect positions where the long and narrow concave defects exist on the mask substrate; setting a repair material on the surface of the multiple defect positions at the same time; using an energy source to simultaneously bombard the repair material on the surface of the multiple defect positions so that the repair material sinks into the corresponding long and narrow concave defects.
[0010] Optionally, providing a mask substrate to be repaired and locating a defective position where a long and narrow concave defect exists on the mask substrate includes: providing a mask substrate to be repaired and locating a defective position where a long and narrow concave defect exists on the mask substrate; bombarding a repair material with an energy source so that the repair material sinks into the long and narrow concave defect, and the method also includes: re-locating a defective position where a long and narrow concave defect exists on the mask substrate; bombarding the repair material with an energy source so that the repair material sinks into the long and narrow concave defect.
[0011] Optionally, disposing the repair material on the surface of the defect location includes: depositing the repair material on the surface of the defect location.
[0012] Optionally, the energy source is a laser, an ion beam or an electron beam.
[0013] Optionally, the material of the mask substrate is glass, and the repair material is tetraethyl orthosilicate.
[0014] Optionally, after bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes: removing the repair material outside the narrow and long concave defect.
[0015] Optionally, the energy of the energy source is within a preset energy range, and the preset energy range is an energy range that causes the repair material to sink but not ablate.
[0016] The beneficial effects of this application include:
[0017] The present application provides a method for repairing a narrow and long concave defect on a photomask substrate, comprising: providing a photomask substrate to be repaired, and locating a defect position where a narrow and long concave defect exists on the photomask substrate; setting a repair material on the surface of the defect position; and bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect. The method for repairing a narrow and long concave defect on a photomask substrate first sets the repair material at the defect position, and then bombards the repair material with an energy source, so that the repair material sinks into the narrow and long concave defect and fills the narrow and long concave defect. The method can repair narrow and long concave defects with a large depth-to-width ratio on a photomask substrate, reduce the scrap rate of the photomask substrate, thereby reducing the production cost of the mask and shortening the production cycle. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0019] Figure 1 One of the flow charts of the method for repairing the narrow and long concave defects on the mask substrate provided in the embodiment of the present application;
[0020] Figure 2 A schematic diagram of a process for repairing a narrow and long concave defect on a mask substrate provided in an embodiment of the present application;
[0021] Figure 3 Flow chart 2 of the method for repairing narrow and long concave defects on a photomask substrate provided in an embodiment of the present application;
[0022] Figure 4 Flow chart three of the method for repairing narrow and long concave defects on a mask substrate provided in an embodiment of the present application.
[0023] Icons: 10-mask substrate; 20-narrow and long concave defect; 30-energy source; 40-repair material. DETAILED DESCRIPTION
[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0025] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. It should be noted that, in the absence of conflict, the various features in the embodiments of the present application can be combined with each other, and the combined embodiments are still within the scope of protection of the present application.
[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0027] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0028] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0029] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0030] The present invention provides a method for repairing a narrow and long concave defect on a photomask substrate. Figure 1 ,include:
[0031] S100: providing a photomask substrate to be repaired, and locating a defect position where a narrow and long concave defect exists on the photomask substrate.
[0032] Please refer to Figure 2 , the photomask substrate 10 to be repaired is inspected, and the position of the narrow and long concave defect 20 on the photomask substrate 10 to be repaired is located, that is, the defect position. It can be understood that the number of defect positions on the photomask substrate 10 to be repaired can be one, two, or more. When the number of defect positions is more than one, only one defect position can be located at a time, or all defect positions can be located at the same time.
[0033] The narrow and long concave defect 20 refers to a concave defect whose depth to width ratio on the surface of the mask substrate 10 exceeds a preset value. When the depth-to-width ratio of the concave defect exceeds the preset value, the repair material 40 is set on the concave defect, but the repair material 40 cannot completely enter the concave defect to fill the concave defect and will accumulate near the opening of the concave defect.
[0034] S200: Setting a repair material on the surface of the defective position.
[0035] The repair material 40 is disposed on the surface of the defect position. Since the repair material 40 cannot completely enter the narrow and long concave defect 20 , the repair material 40 will accumulate near the opening of the narrow and long concave defect 20 .
[0036] Optionally, a repair material 40 is deposited on the surface of the defect location.
[0037] That is, the repair material 40 is deposited near the opening of the narrow and long concave defect 20 through the material deposition process.
[0038] S300: Use energy source to bombard the repair material so that the repair material sinks into the narrow and long concave defect.
[0039] The energy source 30 may be a laser, an ion beam or an electron beam. The energy source 30 bombards the repair material 40 to decompose the repair material 40 and / or provides energy to the repair material 40 to make the repair material 40 accumulated near the opening of the narrow and long concave defect 20 sink and further move into the narrow and long concave defect 20 to fill the narrow and long concave defect 20.
[0040] In the above method for repairing the narrow and long concave defect on the mask substrate, the repair material 40 is first placed at the defect position, and then the energy source 30 is used to bombard the repair material 40, so that the repair material 40 sinks into the narrow and long concave defect 20 and fills the narrow and long concave defect 20. This method can repair the narrow and long concave defect 20 with a large depth-to-width ratio on the mask substrate 10, reduce the scrap rate of the mask substrate 10, thereby reducing the production cost of the mask and shortening the production cycle.
[0041] Optionally, the material of the mask substrate 10 is glass, and the repair material 40 is tetraethyl orthosilicate.
[0042] Glass is a common material for the mask substrate 10, and its refractive index is 1.5. Tetraethyl orthosilicate ((C2H5O)4Si, TEOS) will decompose into silicon dioxide (see the chemical formula below) after being irradiated by the energy source 30. The refractive index of silicon dioxide is between 1.45-1.55, which is close to the refractive index of glass.
[0043] (C2H5O)4Si+=C2H5OH+SiF4+SiO2
[0044] In this way, after the narrow and long concave defect 20 is filled with silicon dioxide, the mask substrate 10 can be repaired better, and the light intensity of the repaired narrow and long concave defect 20 can meet the detection requirement.
[0045] Optionally, the energy of the energy source 30 is within a preset energy range, which is an energy range that causes the repair material 40 to sink but not be ablated.
[0046] The preset energy range can be determined according to the repair material 40. The energy of the energy source 30 within the preset energy range can make the repair material 40 sink but not ablate, thereby avoiding a large loss of the repair material 40 when the energy source 30 bombards the repair material 40 and improving the repair success rate.
[0047] In order to ensure that the repair material 40 has filled the narrow and long concave defect 20, optionally, after bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes:
[0048] S400: Perform light intensity detection on the repaired narrow and long concave defect.
[0049] If the test results show that the light intensity of the repaired elongated concave defect 20 is within the preset light intensity range, the repaired mask substrate 10 meets the quality requirements and can continue to be used. If the test results show that the light intensity of the repaired elongated concave defect 20 is outside the preset light intensity range, the repaired mask substrate 10 does not meet the quality requirements and needs to be repaired. Light intensity testing of the repaired elongated concave defect 20 can promptly detect unsatisfactory repair situations and prevent unqualified mask substrates 10 from entering subsequent production lines.
[0050] Optionally, if the light intensity of the repaired narrow and long concave defect 20 is outside the preset light intensity range, the method further includes:
[0051] S500: The repair material is disposed on the surface of the defective position again.
[0052] S600: Use energy source to bombard the repair material so that the repair material sinks into the narrow and long concave defect.
[0053] The repair material 40 is disposed on the surface of the defect position again, and the energy source 30 is used to drive the repair material 40 into the narrow and long concave defect 20 to further fill the narrow and long concave defect 20 .
[0054] After this step, the repaired narrow and long concave defect 20 may be tested for light intensity again. If the test result is still unqualified, the process of setting the repair material 40 and bombarding the repair material 40 may be repeated until the repaired narrow and long concave defect 20 passes the test.
[0055] Optionally, after bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further comprises:
[0056] S700: Remove the repair material outside the narrow and long concave defect.
[0057] If the repair material 40 used in the repair process does not completely enter the narrow and long recess defect 20, the excess repair material 40 will cause the surface of the mask substrate 10 to be uneven. Therefore, after the repair process is completed, the repair material 40 located outside the narrow and long recess defect 20 can be removed to keep the surface of the mask substrate 10 flat.
[0058] Optionally, removing the repair material outside the narrow and long concave defect includes:
[0059] The surface of the photomask substrate is planarized to remove the repair material outside the narrow and long concave defect.
[0060] For example, chemical mechanical polishing (CMP), high-speed rotation planarization technology (SPC), etc. are used to planarize the surface of the mask substrate 10 to make the surface of the mask substrate 10 flat, thereby improving the performance of the mask substrate 10.
[0061] Optionally, see Figure 3 , the method for repairing the narrow and long concave defect on the mask substrate includes:
[0062] S110: providing a photomask substrate to be repaired, and locating a plurality of defect positions where narrow and long concave defects exist on the photomask substrate.
[0063] S210: Setting the repair material on the surfaces of multiple defective locations simultaneously.
[0064] S310: Use an energy source to bombard the repair material on the surface of multiple defect positions at the same time, so that the repair material sinks into the corresponding narrow and long concave defects.
[0065] Please refer to Figure 2 When inspecting the photomask substrate 10 to be repaired, multiple defect positions on the photomask substrate 10 are simultaneously acquired. Then, the repair material 40 is simultaneously set on the surface of the multiple defect positions, and the energy source 30 is used to bombard the repair material 40 on the surface of the multiple defect positions simultaneously. In this way, multiple narrow and long concave defects 20 can be repaired at the same time, and the repair efficiency is high.
[0066] Optionally, see Figure 4 , providing a photomask substrate to be repaired, and locating a defect position of a narrow and long concave defect on the photomask substrate includes:
[0067] S120: providing a photomask substrate to be repaired, and locating a defect position where a narrow and long concave defect exists on the photomask substrate.
[0068] After bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes:
[0069] S130: relocating a defect position where a narrow and long concave defect exists on the mask substrate.
[0070] S220: Setting a repair material on the surface of the defective position.
[0071] S320: Use an energy source to bombard the repair material so that the repair material sinks into the narrow and long concave defect.
[0072] Please refer to Figure 2 When inspecting the photomask substrate 10 to be repaired, only one defect position on the photomask substrate 10 is obtained at a time, and then the narrow and long concave defect 20 at the defect position is repaired. After one narrow and long concave defect 20 is repaired, another defect position is obtained, and then the narrow and long concave defect 20 at the other defect position is repaired. Repeat the above process until the narrow and long concave defects 20 at all defect positions on the surface of the photomask substrate 10 are repaired.
[0073] It should be understood that, although the various steps in the above flowchart are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear description in this article, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowchart may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.
[0074] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A method for repairing a narrow and long concave defect on a mask substrate, characterized in that: include: Providing a photomask substrate to be repaired, and locating a defect position where a narrow and long concave defect exists on the photomask substrate; placing a repair material on the surface of the defect location; The repair material is bombarded with an energy source to make the repair material sink into the narrow and long concave defect.
2. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: After bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes: The repaired narrow and long concave defect is subjected to light intensity detection.
3. The method for repairing a narrow and long concave defect on a mask substrate according to claim 2, characterized in that: If the light intensity of the narrow and long concave defect is outside the preset light intensity range, the method further includes: Disposing the repair material on the surface of the defective position again; The energy source is used to bombard the repair material so that the repair material sinks into the narrow and long concave defect.
4. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: include: Providing a photomask substrate to be repaired, and locating a plurality of defect positions where narrow and long concave defects exist on the photomask substrate; placing a repair material on the surface of a plurality of defect locations simultaneously; An energy source is used to simultaneously bombard the repair material on the surfaces of multiple defect locations, so that the repair material sinks into the corresponding narrow and long concave defects.
5. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: The step of providing a photomask substrate to be repaired and locating a defect position of a narrow and long concave defect on the photomask substrate comprises: Providing a photomask substrate to be repaired, and locating a defect position where a narrow and long concave defect exists on the photomask substrate; After bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes: Re-locating a defect position where a narrow and long concave defect exists on the photomask substrate; The energy source is used to bombard the repair material so that the repair material sinks into the narrow and long concave defect.
6. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: The step of placing the repair material on the surface of the defective position comprises: A repair material is deposited on the surface of the defect location.
7. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: The energy source is a laser, an ion beam or an electron beam.
8. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: The material of the photomask substrate is glass, and the repair material is tetraethyl orthosilicate.
9. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: After bombarding the repair material with an energy source so that the repair material sinks into the narrow and long concave defect, the method further includes: The repair material outside the narrow and long concave defect is removed.
10. The method for repairing a narrow and long concave defect on a mask substrate according to claim 1, characterized in that: The energy of the energy source is within a preset energy range, and the preset energy range is an energy range that causes the repair material to sink but not ablate.