A system and method for multi-layer collaborative lithography alignment of special-shaped workpieces

Abstract

The present invention relates to the field of micro-nano processing. The present invention provides a system and method for multi-layer collaborative photolithography overlay alignment of a special-shaped workpiece. The system includes the following three layers of alignment marks: A) bottom special-shaped fixture layer alignment mark; B) upper photolithography mask layer alignment mark; C) middle special-shaped workpiece layer alignment mark; these three layers of alignment marks and special-shaped fixtures are precisely designed to fix the special-shaped workpiece and form a corresponding relationship in spatial position. In the overlay alignment process, high-precision multi-dimensional alignment is achieved by simultaneously adjusting the relative positions of the three layers of marks; the core steps of the method include: A) initial coarse alignment; B) fine alignment; C) angle deviation correction; D) iterative optimization. This multi-layer collaborative alignment method makes full use of the characteristics of each layer of marks, can effectively compensate for the cumulative errors that may be generated in the process of multiple processing of special-shaped workpieces, and significantly improves the accuracy and reliability of overlay alignment.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano processing, and more specifically to a multi-layer collaborative photolithography overlay alignment system and method for a special-shaped workpiece. Background Art

[0002] Conventional lithography systems are mainly designed for standard shapes such as 4-inch, 6-inch or 8-inch round wafers. Some exposure machines have also developed some fixed-size square sample stage suction cups for fixing samples. However, this standardized design is often difficult to be compatible with various shapes of irregular workpieces. Some common processing equipment, such as contact UV exposure machines, have inherent limitations in alignment accuracy and operational flexibility. During multiple processing processes, each overlay alignment may introduce tiny errors, which will gradually accumulate and ultimately affect the accuracy and yield of the product. Especially in the multiple overlay processes of irregular workpieces, it will also cause an increase in alignment time, affecting production efficiency. The existing technology often loses sight of one thing while focusing on another when solving the above problems, and it is difficult to simultaneously meet the needs of high-precision, high-efficiency and diversified workpiece processing. Therefore, it is of great practical significance and market value to develop an overlay alignment system and method that can effectively solve these problems. Summary of the invention

[0003] In order to solve the problems in the prior art, the purpose of the present invention is to provide a multi-layer collaborative overlay system and method for special-shaped workpieces, which is particularly suitable for contact ultraviolet exposure machines, has the advantages of high precision, wide applicability, and high process compatibility, can improve product yield, and has good economic benefits and application prospects.

[0004] To achieve the above object, the technical solution adopted by the present invention is:

[0005] In the first technical solution, a multi-layer collaborative lithography alignment system for a special-shaped workpiece includes:

[0006] A special-shaped fixture located at the bottom layer, on which a special-shaped fixture layer alignment mark is provided;

[0007] A photolithography mask located at the upper layer, on which a photolithography mask layer alignment mark is provided;

[0008] The layer of irregular-shaped workpiece located in the middle is provided with an irregular-shaped workpiece layer alignment mark;

[0009] The special-shaped fixture is used to fix the special-shaped workpiece, and the special-shaped fixture layer alignment mark, the photolithography mask layer alignment mark, and the special-shaped workpiece layer alignment mark form a corresponding relationship in spatial position.

[0010] In the first technical solution, as a preferred embodiment, the shape of the special-shaped fixture is a metal tray consistent with the sample stage suction cup, the inner diameter of the special-shaped fixture matches the size of the exposure machine sample stage suction cup and has a positive tolerance, and the side wall of the special-shaped fixture is provided with a threaded hole for fixing the fixture and the suction cup;

[0011] The back of the special-shaped fixture includes a special-shaped workpiece groove, the size of the special-shaped workpiece groove matches the special-shaped workpiece and has a positive tolerance, and the depth of the groove is less than the thickness of the special-shaped workpiece;

[0012] The special-shaped fixture is placed upside down on the sample stage suction cup, so that the suction cup is embedded in the tray, and the special-shaped fixture and the sample stage suction cup are fixed with screws / jackscrews.

[0013] In the first technical solution, preferably, the alignment mark of the special-shaped fixture layer includes at least 4 cross marks, and the 4 cross marks are distributed at different positions around the special-shaped workpiece groove, and at least 2 pairs of cross mark center lines are perpendicular to each other.

[0014] In the first technical solution, preferably, the photolithography mask layer alignment mark includes:

[0015] The mark corresponding to the position of the alignment mark of the shaped fixture layer, the size of the alignment mark of the photolithography mask layer is not larger than the size of the alignment mark of the shaped fixture layer; and

[0016] The alignment mark located in a special-shaped workpiece area includes: at least 4 cross marks distributed in different directions inside the special-shaped workpiece area, wherein at least 2 pairs of cross mark center lines are perpendicular to each other.

[0017] In the first technical solution, as a preferred embodiment, the multi-layer collaborative lithography alignment system for special-shaped workpieces further includes:

[0018] Angle deviation detection marks for angle deviation correction, the angle deviation detection marks are horizontal and vertical stripe arrays, the horizontal stripe array is located below or above the alignment marks of the special-shaped fixture layer and the alignment marks of the photolithography mask layer, and the vertical stripe array is located on the left or right side of the alignment marks of the special-shaped fixture layer and the alignment marks of the photolithography mask layer;

[0019] The photolithography mask layer, the special-shaped fixture layer and the workpiece layer all have angle deviation detection marks, and the angle deviation detection marks on the photolithography mask layer correspond to the special-shaped fixture layer and the workpiece layer respectively.

[0020] In the first technical solution, preferably, the special-shaped fixture layer alignment mark, the photolithography mask layer alignment mark, and the special-shaped workpiece layer alignment mark are metal marks formed by the following steps:

[0021] Step A1: Spin-coating photoresist on the surface of the special-shaped workpiece and performing pre-baking treatment;

[0022] Step A2: fix the special-shaped workpiece with a special-shaped fixture and accurately align it with the photolithography mask;

[0023] Step A3: exposing the photoresist using the alignment mark and angle offset detection mark pattern in the irregular workpiece area on the photolithography mask;

[0024] Step A4: developing the exposed photoresist and drying it with an inert gas;

[0025] Step A5: After development, the marked area on the surface of the irregular workpiece is exposed to the substrate, while the remaining area is still covered by the photoresist;

[0026] Step A6: depositing a metal film on the surface of the irregular workpiece after photolithography;

[0027] Step A7: Use the lift-off process to remove the metal and photoresist in the non-mark area to form the final metal alignment mark and angle deviation detection mark.

[0028] In the first technical solution, a method for aligning a multi-layer collaborative photolithography of a special-shaped workpiece is provided, using a system for aligning a multi-layer collaborative photolithography of a special-shaped workpiece as described in any one of the first technical solutions, comprising the following steps:

[0029] Step B1: initial rough alignment: adjusting the relative positions of the alignment marks of the shaped fixture layer and the angle offset detection marks and the alignment marks of the photolithography mask layer;

[0030] Step B2: Fine alignment: Use the alignment marks of the shaped workpiece layer and the alignment marks of the photolithography mask layer to perform precise alignment;

[0031] Step B3: Angle deviation correction: using the angle deviation detection marks on the photolithography mask and the special-shaped workpiece to detect and correct the rotation angle deviation;

[0032] Step B4: Iterative optimization: The optimal alignment effect is achieved by repeatedly fine-tuning the relative positions of the alignment marks of the special-shaped workpiece layer and the photolithography mask layer.

[0033] In the second technical solution, preferably, the initial rough alignment step includes adjusting the longitudinal vertical, transverse horizontal, longitudinal horizontal and rotation axis parameters of the four-dimensional displacement stage of the exposure machine: and

[0034] This includes checking whether the center of the alignment mark on the photolithography mask is located at the center of the alignment mark on the special-shaped fixture.

[0035] In the second technical solution, preferably, the fine alignment step includes checking whether the center of the alignment mark on the special-shaped workpiece is located at the center of the alignment mark on the photolithography mask.

[0036] In the second technical solution, preferably, the rotation offset correction step includes checking whether there is an angle between an angle offset detection mark on the special-shaped workpiece and an angle offset detection mark on the photolithography mask.

[0037] It should be understood that the above general description and the following detailed description are merely exemplary and do not limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a special-shaped clamp in an embodiment of the present invention.

[0039] Figure 2 Schematic diagram of alignment marks on a photolithography mask in an embodiment of the present invention.

[0040] Figure 3 It is a schematic diagram of the alignment between the mark on the special-shaped fixture and the mark on the photolithography mask in an embodiment of the present invention.

[0041] Figure 4 Schematic diagram of the rotation angle deflection generated by the angle offset detection mark on the special-shaped workpiece and the angle offset detection mark on the photolithography mask in an embodiment of the present invention.

[0042] Figure 5 It is a schematic diagram of the overlay result of the present invention.

[0043] Figure 6 Flowchart of the multi-layer collaborative lithography alignment method for special-shaped workpieces. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the technical solution more clear, the technical solution is further described in detail below in conjunction with specific implementation methods. It should be understood that these descriptions are only exemplary and are not intended to limit the scope of the technical solution.

[0045] Exemplarily, this embodiment provides a multi-layer collaborative overlay alignment system for a non-standard rectangular workpiece with a length, width and height of 56mm*14mm*1mm. The alignment system includes: A) a special-shaped fixture on which a special-shaped fixture layer alignment mark is provided; B) a photolithography mask on which a photolithography mask layer alignment mark is provided; C) a special-shaped workpiece on which a special-shaped workpiece layer alignment mark is provided; wherein the special-shaped fixture is used to fix the special-shaped workpiece, and the three layers of alignment marks form a corresponding relationship in spatial position.

[0046] Specifically, the sample stage of the above-mentioned contact UV exposure machine is a circular suction cup with a diameter of 4 inches, which is used to expose a standard 4-inch wafer.

[0047] Further, a) the appearance of the above-mentioned special-shaped fixture is a round metal tray with an inner diameter consistent with the sample stage suction cup, the inner diameter is 4 inches, and has a positive tolerance; the side wall of the fixture is provided with a threaded hole for fixing the fixture and the suction cup, and the wall thickness of the fixture is 1.2mm; b) the back of the tray includes a special-shaped workpiece groove, the size of which is 56mm*14mm*0.6mm in length*width*height, and has a positive tolerance; c) the groove contains a hollow square hole, the length*width of which is 40mm*8mm; d) surface treatment: the entire metal tray is black oxidized; e) installation method: the special-shaped fixture is inverted on the sample stage suction cup, so that the suction cup is embedded in the tray, and the special-shaped fixture and the sample stage suction cup are fixed with a top screw; f) working principle: the special-shaped workpiece is placed in the special-shaped groove; the vacuum system of the exposure machine is started, and suction is generated through the hollow pores to firmly adsorb the special-shaped workpiece on the fixture, see Figure 1 .

[0048] Specifically, the above-mentioned special-shaped fixture layer alignment mark includes 4 cross marks with a length and width of 0.8mm*0.2mm, which are distributed at different positions around the special-shaped workpiece groove, and at least 2 pairs of cross mark center lines are perpendicular to each other.

[0049] Specifically, the alignment marks of the lithography mask layer include two groups: A) marks corresponding to the positions of the alignment marks of the shaped fixture layer, and the size of the marks on the lithography mask is not larger than the size of the marks on the shaped fixture; B) alignment marks located in the shaped workpiece area, at least 4 cross marks are distributed in different positions inside the shaped workpiece area, and at least 2 pairs of cross mark center lines are perpendicular to each other.

[0050] Furthermore, the marks corresponding to the alignment mark positions of the shaped fixture layer on the photolithography mask are 4 cross marks with a length and width of 0.6mm*0.15mm, and the alignment marks located in the shaped workpiece area are 4 cross marks with a length and width of 0.02mm*0.005mm. Figure 2

[0051] In one embodiment of the present application, the diameter of the suction cup of the exposure machine is 6 inches, and the inner diameter of the special-shaped fixture is also 6 inches.

[0052] In one embodiment of the present application, the alignment marks of the special-shaped fixture layer include 4 cross marks with a length and width of 0.4mm*0.1mm, which are distributed at different positions around the special-shaped workpiece slot, and at least 2 pairs of cross mark center lines are perpendicular to each other.

[0053] In one embodiment of the present application, the marks corresponding to the alignment mark positions of the special-shaped fixture layer on the photolithography mask are 4 cross marks with a length and width of 0.2mm*0.05mm, and the alignment marks located in the special-shaped workpiece area are 4 cross marks with a length and width of 0.01mm*0.0025mm.

[0054] The above-mentioned system also includes an angle offset detection mark for detecting rotational offset, and the angle offset detection mark is a horizontal and vertical stripe array, the horizontal stripe array is located below or above the alignment mark of the special-shaped fixture layer and the alignment mark of the photolithography mask layer, and the vertical stripe array is located to the left or right of the alignment mark of the special-shaped fixture layer and the alignment mark of the photolithography mask layer, and the angle offset detection mark on the photolithography mask layer corresponds to the special-shaped fixture layer and the workpiece layer respectively.

[0055] Specifically, the transverse stripe array is composed of 4 stripes arranged periodically and kept parallel to the cross mark in the transverse direction, and the longitudinal stripe array is composed of 4 stripes arranged periodically and kept parallel to the cross mark in the longitudinal direction.

[0056] Furthermore, the length and width of the horizontal and vertical stripes in the angle offset detection marks corresponding to the special-shaped fixture layer and the photolithography mask layer are both 0.8mm*0.2mm, and the period is 0.4mm; the length and width of the horizontal and vertical stripes in the angle offset detection marks corresponding to the special-shaped workpiece layer and the photolithography mask layer are both 0.02mm*0.005mm, and the period is 0.01mm.

[0057] In one embodiment of the present application, the transverse stripe array is composed of 4 stripes arranged periodically and kept parallel to the cross mark in the transverse direction, and the longitudinal stripe array is composed of 4 stripes arranged periodically and kept parallel to the cross mark in the longitudinal direction.

[0058] In one embodiment of the present application, the length and width of the horizontal and vertical stripes in the angle offset detection marks corresponding to the shaped fixture layer and the photolithography mask layer are both 0.4mm*0.1mm, and the period is 0.3mm; the length and width of the horizontal and vertical stripes in the angle offset detection marks corresponding to the shaped workpiece layer and the photolithography mask layer are both 0.01mm*0.005mm, and the period is 0.02mm.

[0059] The workpiece layer alignment mark and the angle deviation detection mark are metal marks formed by the following steps: step A1: spin coating photoresist on the surface of the special-shaped workpiece and performing pre-baking treatment; step A2: fixing the special-shaped workpiece by using a special-shaped fixture and accurately aligning it with the photolithography mask; step A3: exposing the photoresist using the alignment mark pattern and the angle deviation detection mark in the special-shaped workpiece area on the photolithography mask; step A4: developing the exposed photoresist and drying it with an inert gas; step A5: after development, the marked area on the surface of the special-shaped workpiece exposes the substrate, while the remaining area is still covered by the photoresist; step A6: depositing a metal film on the surface of the special-shaped workpiece after photolithography; step A7: using a lift-off process to remove the metal and photoresist in the non-marked area to form the final metal alignment mark and angle deviation detection mark.

[0060] In one embodiment of the present application, the metal film is a Cr film with a thickness of 100 nm.

[0061] In one embodiment of the present application, the photoresist used in the process of the workpiece layer alignment mark and the angle deviation detection mark is a negative photoresist with a thickness of 0.0001 mm.

[0062] like Figure 6 As shown, the present application accordingly provides a multi-layer collaborative overlay alignment method for special-shaped workpieces, which uses the alignment system proposed in the present application to perform subsequent multiple overlay alignments. The overlay alignment method includes the following steps: Step B1: Initial coarse alignment: Adjust the relative position of the alignment mark and angle offset detection mark of the special-shaped fixture layer and the alignment mark of the photolithography mask layer; Step B2: Fine alignment: Use the alignment mark of the special-shaped workpiece layer to accurately align with the alignment mark of the photolithography mask layer; Step B3: Angle deviation correction: Use the angle offset detection marks on the photolithography mask and the special-shaped workpiece to detect and correct the rotation angle deviation; Step B4: Iterative optimization: Achieve the optimal alignment effect by fine-tuning the relative position of the alignment marks of the special-shaped workpiece layer and the photolithography mask layer for multiple times.

[0063] Specifically, the initial coarse alignment step includes adjusting the longitudinal vertical, transverse horizontal, longitudinal horizontal and rotation axis parameters of the four-dimensional displacement stage of the exposure machine; the initial coarse alignment step includes checking whether the center of the alignment mark on the photolithography mask is located at the center of the alignment mark on the special-shaped fixture; the fine alignment step includes checking whether the center of the alignment mark on the special-shaped workpiece is located at the center of the alignment mark on the photolithography mask; the angle deviation correction step includes checking whether the angle offset detection mark on the special-shaped workpiece has an angle with the angle offset detection mark on the photolithography mask.

[0064] Furthermore, the initial coarse alignment result is that the center of the alignment mark on the photolithography mask is located at the center of the alignment mark on the shaped fixture; the fine alignment result is that the center of the alignment mark on the shaped workpiece is located at the center of the alignment mark on the photolithography mask; the angle deviation correction result is that the angle offset detection mark on the shaped workpiece coincides with the angle offset detection mark on the photolithography mask without any angle.

[0065] In one embodiment of the present application, the mark on the special-shaped fixture is processed by a milling cutter. This processing method makes the edge of the upper mark unclear. When performing rough alignment, the center of the alignment mark is used for alignment. If the center of the upper mark does not coincide with the center of the lower mark, the horizontal level, vertical level and rotation axis parameters of the four-dimensional displacement stage of the mobile exposure machine are adjusted so that all the marks on the upper layer are located in the center area of ​​the corresponding marks on the lower layer, and the corresponding edges of the upper and lower marks are parallel. See Figure 3 .

[0066] In one embodiment of the present application, during fine alignment, the center and edge of the alignment mark are used for alignment, and the lateral and longitudinal parameters of the four-dimensional displacement stage of the exposure machine are moved so that all marks on the upper layer are located in the central area of ​​the corresponding marks on the lower layer.

[0067] In one embodiment of the present application, when the angle deviation detection mark on the special-shaped workpiece and the angle deviation detection mark on the photolithography mask plate generate a rotation angle deflection, see Figure 4 , by adjusting the rotation axis parameters of the four-dimensional displacement stage of the exposure machine, it has no rotation angle deflection, and the corresponding edges of the upper and lower layer marks are parallel.

[0068] In one embodiment of the present application, during the iterative optimization process, the parameters of the four-dimensional displacement stage of the exposure machine are adjusted, the special-shaped fixture is moved, the special-shaped workpiece is driven to move, and the relative positions of the alignment marks of the special-shaped workpiece layer and the lithography mask layer are fine-tuned to achieve the optimal alignment effect.

[0069] In this embodiment, the same special-shaped workpiece can be photolithographically processed through multiple masks, and the photolithographic process of each partial structure is performed in steps through different masks, and the result is as follows: Figure 5 shown.

[0070] The above embodiments are preferred implementations of the present invention, but the implementation of the present invention is not limited by the above embodiments. It should be noted that the above described embodiments do not limit the present invention, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is defined by the scope of the claims.

Claims

1. A method for multi-layer collaborative lithography alignment of a special-shaped workpiece, characterized in that: A multi-layer collaborative photolithography alignment system for a special-shaped workpiece is used, and the multi-layer collaborative photolithography alignment system for a special-shaped workpiece comprises: A special-shaped fixture located at the bottom layer, on which a special-shaped fixture layer alignment mark is provided; A photolithography mask located at the upper layer, on which a photolithography mask layer alignment mark is provided; A special-shaped workpiece located in the middle layer is provided with a special-shaped workpiece layer alignment mark; The special-shaped fixture is used to fix the special-shaped workpiece, and the special-shaped fixture layer alignment mark, the photolithography mask layer alignment mark, and the special-shaped workpiece layer alignment mark form a corresponding relationship in spatial position; The multi-layer collaborative lithography alignment system for special-shaped workpieces also includes: Angle deviation detection marks for angle deviation correction, the angle deviation detection marks are horizontal and vertical stripe arrays, the horizontal stripe array is located below or above the alignment marks of the special-shaped fixture layer and the alignment marks of the photolithography mask layer, and the vertical stripe array is located on the left or right side of the alignment marks of the special-shaped fixture layer and the alignment marks of the photolithography mask layer; The photolithography mask layer, the special-shaped fixture layer and the special-shaped workpiece layer all have angle deviation detection marks, and the angle deviation detection marks on the photolithography mask layer correspond to the angle deviation detection marks on the special-shaped fixture layer and the special-shaped workpiece layer respectively; The method comprises the following steps: Step B1: initial rough alignment: adjusting the relative positions of the alignment marks of the shaped fixture layer and the angle offset detection marks and the alignment marks of the photolithography mask layer; Step B2: Fine alignment: Use the alignment marks of the shaped workpiece layer and the alignment marks of the photolithography mask layer to perform precise alignment; Step B3: Angle deviation correction: using the angle deviation detection marks on the photolithography mask and the special-shaped workpiece to detect and correct the rotation angle deviation; Step B4: Iterative optimization: The optimal alignment effect is achieved by repeatedly fine-tuning the relative positions of the alignment marks of the special-shaped workpiece layer and the photolithography mask layer.

2. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 1, characterized in that: The shape of the special-shaped fixture is a metal tray consistent with the sample stage suction cup, the inner diameter of the special-shaped fixture matches the size of the exposure machine sample stage suction cup and has a positive tolerance, and the side wall of the special-shaped fixture is provided with a threaded hole for fixing the fixture and the suction cup; The back of the special-shaped fixture includes a special-shaped workpiece groove, the size of the special-shaped workpiece groove matches the special-shaped workpiece and has a positive tolerance, and the depth of the groove is less than the thickness of the special-shaped workpiece; The special-shaped fixture is placed upside down on the sample stage suction cup, so that the suction cup is embedded in the tray, and the special-shaped fixture and the sample stage suction cup are fixed with screws / jackscrews.

3. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 1, characterized in that: The alignment marks of the special-shaped fixture layer include at least 4 cross marks, and the 4 cross marks are distributed at different positions around the special-shaped workpiece groove, and the center connecting lines of at least 2 pairs of cross marks are perpendicular to each other.

4. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 1, characterized in that: The photolithography mask layer alignment mark comprises: The mark corresponding to the position of the alignment mark of the shaped fixture layer, the size of the alignment mark of the photolithography mask layer is not larger than the size of the alignment mark of the shaped fixture layer; and The alignment marks located in the area where the special-shaped workpiece is located include: at least 4 cross marks distributed in different directions inside the special-shaped workpiece area, wherein at least 2 pairs of cross mark center lines are perpendicular to each other.

5. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 1, characterized in that: In the irregular workpiece multi-layer collaborative lithography overlay alignment system, the irregular workpiece layer alignment mark is a metal mark formed by the following steps: Step A1: Spin-coating photoresist on the surface of the special-shaped workpiece and performing pre-baking treatment; Step A2: fix the special-shaped workpiece with a special-shaped fixture and accurately align it with the photolithography mask; Step A3: exposing the photoresist using the alignment mark and angle offset detection mark pattern in the irregular workpiece area on the photolithography mask; Step A4: developing the exposed photoresist and drying it with an inert gas; Step A5: After development, the marked area on the surface of the irregular workpiece is exposed to the substrate, while the remaining area is still covered by the photoresist; Step A6: depositing a metal film on the surface of the irregular workpiece after photolithography; Step A7: Use the lift-off process to remove the metal and photoresist in the non-mark area to form the final metal alignment mark and angle deviation detection mark.

6. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 1, characterized in that: The initial rough alignment step includes adjusting the longitudinal vertical, transverse horizontal, longitudinal horizontal and rotation axis parameters of the four-dimensional displacement stage of the exposure machine: and This includes checking whether the center of the alignment mark on the photolithography mask is located at the center of the alignment mark on the special-shaped fixture.

7. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 6, characterized in that: The fine alignment step includes checking whether the center of the alignment mark on the special-shaped workpiece is located at the center of the alignment mark on the photolithography mask.

8. The method for multi-layer collaborative lithography alignment of a special-shaped workpiece according to claim 6, characterized in that: The angle deviation correction step includes checking whether an angle deviation detection mark on the special-shaped workpiece and an angle deviation detection mark on the photolithography mask have an included angle.

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