High and low temperature compensated bandgap reference circuit and conversion device

Abstract

The present application provides a high-low temperature compensated bandgap reference source circuit and a conversion device, including a low-temperature mirror unit, a low-temperature adjustment unit, a high-temperature mirror unit, a high-temperature adjustment unit, an operational amplifier unit, and a reference adjustment unit. The low-temperature adjustment unit and the low-temperature mirror unit generate a low-temperature mirror current based on a first current of a first transistor at different temperatures. The high-temperature adjustment unit and the high-temperature mirror unit generate a high-temperature mirror current based on a second transistor at different temperatures when the temperature is higher than a preset temperature threshold. The reference adjustment unit sends a reference voltage, a first adjustment voltage, and a second adjustment voltage to the operational amplifier unit based on the high-temperature mirror current and / or the low-temperature mirror current. The operational amplifier unit outputs a stable reference source voltage based on the reference voltage, the first adjustment voltage, and the second adjustment voltage. The present application outputs a stable reference source voltage at different temperatures through the above structure, and the circuit structure is simple and the power consumption is low.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor integrated circuits, and more particularly, to a high and low temperature compensated bandgap reference circuit and a conversion device. Background Art

[0002] High and low temperature compensated bandgap reference circuits have extremely wide applications in the field of high-precision system design. In analog and digital integrated conversion circuits, high and low temperature compensated bandgap reference circuits can provide a stable voltage reference to ensure that the conversion error of the conversion circuit is minimized under different temperature conditions.

[0003] Traditional high and low temperature compensated bandgap reference circuits usually adopt first-order temperature compensation and second-order curvature temperature compensation. Among them, the first-order temperature compensation linearly compensates the temperature coefficient of the PN junction between the base and emitter of the transistor, and the second-order curvature temperature compensation adds the compensation of the square term of the temperature coefficient in the PN junction between the base and emitter of the transistor on the basis of the first-order temperature compensation.

[0004] However, the above circuit structures adopting first-order temperature compensation and second-order curvature temperature compensation are complex, consume high power and have a large area. Summary of the Invention

[0005] The purpose of the present application is to provide a high and low temperature compensated bandgap reference circuit and a conversion device for the deficiencies in the above-mentioned prior art, so as to solve the problems of complex circuit, high power consumption and large area in the prior art.

[0006] To achieve the above purpose, the technical solutions adopted in the present application are as follows:

[0007] In a first aspect, the present application provides a high and low temperature compensated bandgap reference circuit, including: a low temperature compensation module, a high temperature compensation module and a reference module. The low temperature compensation module includes a low temperature mirror unit and a low temperature adjustment unit, the high temperature compensation module includes a high temperature mirror unit and a high temperature adjustment unit, the reference module includes an operational amplifier unit and a reference adjustment unit. The low temperature adjustment unit includes a first transistor, and the high temperature adjustment unit includes a second transistor;

[0008] The first end of the low temperature mirror unit is used to access a power supply signal, the second end of the low temperature mirror unit is connected to the first end of the reference adjustment unit, and the third end of the low temperature mirror unit is connected to the first end of the low temperature adjustment unit;

[0009] The second end of the low temperature adjustment unit is used to access the power supply signal, and the grounded end of the low temperature adjustment unit is grounded;

[0010] The first end of the high-temperature mirror unit is used to access the power signal. The second end of the high-temperature mirror unit is connected to the second end of the reference adjustment unit. The third end of the high-temperature mirror unit is connected to the first end of the high-temperature adjustment unit. The fourth end of the high-temperature mirror unit is connected to the second end of the high-temperature adjustment unit. The ground terminal of the high-temperature adjustment unit is grounded.

[0011] The third end of the reference adjustment unit is connected to the first end of the operational amplifier unit. The fourth end of the reference adjustment unit is connected to the second end of the operational amplifier unit. The ground terminal of the reference adjustment unit is grounded.

[0012] The third end of the operational amplifier unit is used to access the power signal. The fourth end of the operational amplifier unit serves as the output port of the high-low temperature compensated bandgap reference source circuit. The ground terminal of the operational amplifier unit is grounded.

[0013] The low-temperature adjustment unit is used to generate a low-temperature adjustment current based on the first current generated by the first transistor at different temperatures. The low-temperature mirror unit is used to send a low-temperature mirror current to the reference adjustment unit according to the low-temperature adjustment current. The high-temperature adjustment unit is used to generate a high-temperature adjustment current based on the second transistor at different temperatures when the temperature is higher than a preset temperature threshold. The high-temperature mirror unit is used to send a high-temperature mirror current to the reference adjustment unit according to the high-temperature adjustment current. The reference adjustment unit is used to send a reference voltage, a first adjustment voltage, and a second adjustment voltage to the operational amplifier unit based on the high-temperature mirror current and / or the low-temperature mirror current, so that the operational amplifier unit outputs a stable reference source voltage based on the reference voltage, the first adjustment voltage, and the second adjustment voltage.

[0014] Optionally, the reference adjustment unit includes: a first resistor, a second resistor, and a third transistor;

[0015] The first end of the first resistor is connected to the first end of the operational amplifier unit. The second end of the first resistor is respectively connected to the collector of the third transistor, the base of the third transistor, and the second end of the low-temperature mirror unit;

[0016] The base of the third transistor is also connected to the first end of the operational amplifier unit. The emitter of the third transistor is respectively connected to the second end of the high-temperature mirror unit and the first end of the second resistor;

[0017] The second end of the second resistor is grounded.

[0018] Optionally, the low-temperature adjustment unit further includes: a third resistor;

[0019] The base of the first transistor is connected to the third terminal of the low-temperature mirror unit. The collector of the first transistor is used to access the power supply signal. The emitter of the third transistor is connected to the first end of the third resistor, and the other end of the third resistor is grounded.

[0020] Optionally, the low-temperature mirror unit includes: a first device group, a second MOS transistor, and a fourth resistor. The first device group includes at least one first MOS transistor.

[0021] The sources of the first MOS transistors and the source of the second MOS transistor are used to access the power supply signal. The gates of the first MOS transistors are respectively connected to the gate and the drain of the second MOS transistor. The drains of the first MOS transistors are connected to the second end of the first resistor.

[0022] The drain of the second MOS transistor is also connected to the first end of the fourth resistor, and the other end of the fourth resistor is connected to the base of the first transistor.

[0023] The low-temperature mirror unit is used to perform an integer multiple mirror conversion on the low-temperature regulation current based on the number of first MOS transistors in the first device group to generate a low-temperature mirror current.

[0024] Optionally, the high-temperature regulation unit further includes: a fifth resistor.

[0025] The collector of the second transistor is connected to the third terminal of the high-temperature mirror unit. The emitter of the second transistor is connected to the first end of the fifth resistor. The base of the second transistor is connected to the fourth terminal of the high-temperature mirror unit. The collector current of the second transistor is proportional to the base voltage.

[0026] The other end of the fifth resistor is grounded.

[0027] Optionally, the high-temperature mirror unit includes: a third MOS transistor, a second device group, a fifth MOS transistor, and a sixth resistor. The second device group includes at least one fourth MOS transistor.

[0028] The source of the third MOS transistor, the sources of the fourth MOS transistors, and the source of the fifth MOS transistor are respectively used to access the power supply signal.

[0029] The gate of the third MOS transistor is respectively connected to the gates of the fourth MOS transistors, the gate of the fifth MOS transistor, and the drain of the third MOS transistor. The drain of the third MOS transistor is also connected to the collector of the second transistor.

[0030] The drains of the fourth MOS transistors are connected to the first end of the second resistor. The drain of the fifth MOS transistor is respectively connected to the base of the second transistor and the first end of the sixth resistor.

[0031] The other end of the sixth resistor is grounded;

[0032] The high-temperature mirror unit is configured to perform an integer multiple mirror conversion on the low-temperature regulation current based on the number of fourth MOS transistors in the second device group to generate a high-temperature mirror current.

[0033] Optionally, the operational amplifier unit includes: a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, an operational amplifier, a fourth transistor, a fifth transistor, and a sixth MOS transistor;

[0034] The first end of the seventh resistor and the first end of the eighth resistor are used to access the power supply signal. The second end of the seventh resistor is connected to the first input terminal of the operational amplifier and the collector of the fourth transistor respectively. The second end of the eighth resistor is connected to the second input terminal of the operational amplifier and the collector of the fifth transistor respectively;

[0035] The base of the fourth transistor is connected to the third terminal of the reference adjustment unit. The base of the fifth transistor is connected to the first end of the ninth resistor. The second end of the ninth resistor is connected to the source of the sixth MOS transistor and the fourth terminal of the reference adjustment unit respectively, and is connected to the output port of the high-low temperature compensated bandgap reference source circuit. The emitters of the fourth transistor and the fifth transistor are both connected to the first end of the eleventh resistor, and the second end of the eleventh resistor is grounded;

[0036] The output terminal of the operational amplifier is connected to the gate of the sixth MOS transistor. The drain of the sixth MOS transistor is connected to the second end of the tenth resistor, and the first end of the tenth resistor is connected to the power supply signal.

[0037] Optionally, the high-low temperature compensated bandgap reference source circuit further includes: a startup module;

[0038] The first end of the startup module is used to access the power supply signal;

[0039] The second end of the startup module is connected to the fifth terminal of the operational amplifier unit. The third end of the startup module is connected to the fourth terminal of the operational amplifier unit. The grounded terminal of the startup module is grounded.

[0040] Optionally, the startup module includes: a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, and a sixth transistor;

[0041] The first end of the twelfth resistor is connected to the power supply signal, and the second end of the twelfth resistor is respectively connected to the drain of the seventh MOS transistor, the gate of the seventh MOS transistor, and the gate of the eighth MOS transistor;

[0042] The source of the seventh MOS transistor is respectively connected to the first end of the thirteenth resistor, the gate of the eleventh MOS transistor, and the gate of the twelfth MOS transistor;

[0043] The drain of the eighth MOS transistor is respectively connected to the drain of the ninth MOS transistor and the drain of the twelfth MOS transistor, and the source of the eighth MOS transistor is connected to the fifth end of the operational amplifier unit;

[0044] The sources of the ninth MOS transistor and the tenth MOS transistor are respectively connected to the power supply signal, the gate of the ninth MOS transistor is respectively connected to the gate and the drain of the tenth MOS transistor, and the drain of the tenth MOS transistor is further connected to the collector of the sixth transistor;

[0045] The emitter of the sixth transistor is connected to the first end of the fourteenth resistor, and the base of the sixth transistor is connected to the fourth end of the operational amplifier unit;

[0046] The second end of the fourteenth resistor is grounded;

[0047] The second end of the thirteenth resistor is connected to the drain of the eleventh MOS transistor, and the sources of the eleventh MOS transistor and the twelfth MOS transistor are grounded.

[0048] In a second aspect, the present application provides a conversion device, and the conversion device includes the high and low temperature compensation bandgap reference source circuit as described in the first aspect.

[0049] The beneficial effects of the present application are as follows: The present application provides a low temperature regulation current through a low temperature regulation unit with only one transistor, and provides a high temperature regulation current through a high temperature regulation unit with only one transistor when the ambient temperature is higher than a preset temperature threshold, so that the reference module can output a stable reference source voltage in various temperature scenarios. Since only one transistor is used in the low temperature regulation unit and the high temperature regulation unit, the circuit structure is simple, the power consumption is small, and the high temperature regulation unit only generates a high temperature regulation current when the ambient temperature is higher than the preset temperature threshold, so the power consumption is saved, and the ability to resist changes in factors such as process voltage and temperature is strong. Description of the Drawings

[0050] To more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required for the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0051] Figure 1 is a schematic diagram of the reference source voltage waveform of a first-order bandgap reference source circuit provided by an embodiment of the present application;

[0052] Figure 2 is a schematic structural diagram of a high and low temperature compensation bandgap reference source circuit provided by an embodiment of the present application;

[0053] Figure 3 is a schematic diagram of the high and low temperature regulated current waveform provided by the present application;

[0054] Figure 4 is a schematic structural diagram of another high and low temperature compensation bandgap reference source current provided by an embodiment of the present application;

[0055] Figure 5 is a schematic diagram of the waveform of the reference source voltage after compensation provided by an embodiment of the present application;

[0056] Figure 6 is a schematic structural diagram of another high and low temperature compensation bandgap reference source circuit provided by an embodiment of the present application;

[0057] Figure 7 is a schematic structural diagram of a startup module provided by an embodiment of the present application. Detailed implementation manners

[0058] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of illustration and description, and are not used to limit the protection scope of the present application. In addition, it should be understood that the schematic drawings are not drawn to the physical scale. The flowcharts used in the present application show the operations implemented according to some embodiments of the present application. It should be understood that the operations in the flowchart may not be implemented in sequence, and the steps without logical context can be reversed or implemented simultaneously. In addition, those skilled in the art can add one or more other operations to the flowchart or remove one or more operations from the flowchart under the guidance of the content of the present application.

[0059] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all embodiments. The components of the embodiments of the present application generally described and illustrated in the drawings herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but merely represents selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts fall within the scope of protection of the present application.

[0060] It should be noted that the term "including" will be used in the embodiments of the present application to indicate the presence of the features stated hereinafter, but does not exclude the addition of other features.

[0061] Traditional high and low temperature compensated bandgap reference circuits usually adopt first-order temperature compensation and second-order curvature temperature compensation. However, the above circuit structures using first-order temperature compensation and second-order curvature temperature compensation are complex in structure, high in power consumption and large in area.

[0062] Based on this, the present application proposes a high and low temperature compensated bandgap reference source circuit, which includes an operational amplifier unit, a reference adjustment unit, a low temperature adjustment unit, a low temperature mirror unit, a high temperature adjustment unit and a high temperature mirror unit. The low temperature adjustment unit includes a first transistor, and the high temperature adjustment unit includes a second transistor. The low temperature adjustment unit generates a low temperature adjustment current based on the first transistor, and the low temperature mirror unit sends a low temperature mirror current to the reference adjustment unit according to the low temperature adjustment current. The high temperature adjustment unit generates a high temperature adjustment current based on the second transistor when the temperature is higher than a preset temperature threshold, and the high temperature mirror unit sends a high temperature mirror current to the reference adjustment unit according to the high temperature adjustment current. The reference adjustment unit and the operational amplifier unit output a stable reference source voltage based on the low temperature mirror current and the high temperature mirror current. The present application provides a low temperature adjustment current through a low temperature adjustment unit with only one transistor, and provides a high temperature adjustment current through a high temperature adjustment unit with only one transistor when the ambient temperature reaches the preset temperature threshold, so that the reference module can output a stable reference source voltage in various temperature scenarios. Since only one transistor is used in the low temperature adjustment unit and the high temperature adjustment unit, the circuit structure is simple, the power consumption is small, and the high temperature adjustment unit generates a high temperature adjustment current only when the ambient temperature is higher than the preset temperature threshold, so the power consumption is saved and the ability to resist changes in factors such as process, voltage and temperature is strong.

[0063] Next, the working principle of the bandgap reference source circuit will be introduced. The bandgap reference adds voltages with positive and negative temperature coefficients to generate a temperature-independent voltage reference. Specifically, the base-emitter voltage V BE of the bipolar transistor has the following relationship with the ambient temperature as shown in the following formula (1):

[0064] (1)

[0065] Among them, V BE is the base-emitter voltage, V g0 is the PN junction diode voltage extrapolated to absolute zero, T is the absolute temperature, V T is the thermal voltage, t is the temperature-dependent parameter of the current flowing through the transistor, n is the transistor scaling factor, I s is the saturation current, I REF is the parameter current. Among them, VT = kT / q, k is the Boltzmann constant, with the unit of joules per Kelvin, q is the electron charge, with the unit of coulomb.

[0066] It can be seen from the above formula (1) that as the temperature increases, V BE shows a downward trend, that is, V BE has a negative temperature coefficient. If two bipolar transistors operate at different current densities, then the difference △V BE between the V BE of the two bipolar transistors is proportional to the absolute temperature and has a positive temperature coefficient.

[0067] Based on this, if two bipolar transistors have the same size but different current densities, then △V BE with a positive temperature coefficient is generated. The V BE with a negative temperature coefficient and the △V BE with a positive temperature coefficient are linearly superimposed, and weight coefficients a and weight coefficient b are assigned to V BE and △V BE respectively, to obtain the reference source voltage as shown in the following formula (2):

[0068] V REF = aV BE + b△V BE (2)

[0069] By formula (2), the positive and negative temperature coefficients are cancelled out, so that a first-order reference source voltage V REF independent of temperature can be obtained.

[0070] However, the V BE of the bipolar transistor is non-linear. Therefore, it is difficult for the first-order bandgap reference source circuit to completely eliminate the influence brought by the higher-order temperature coefficient, and the waveform of its reference source voltage V REF presents a parabola shape with a downward opening, as shown in Figure 1 shown, Figure 1 is a schematic diagram of the reference source voltage waveform of a first-order bandgap reference source circuit provided by an embodiment of the present application.

[0071] Therefore, the present invention uses a low temperature compensation module and a high temperature compensation module of a high and low temperature compensation bandgap reference source circuit to respectively Figure 1 Specifically, in the low temperature part, V REF As the temperature increases, V increases, so it is necessary to superimpose a compensation current with a negative temperature coefficient to offset the temperature coefficient at low temperatures. REF It decreases with increasing temperature, so a compensation current with a positive temperature coefficient needs to be superimposed to offset the temperature coefficient at high temperature.

[0072] Next, refer to Figure 2 The specific structure and function of the high and low temperature compensation bandgap reference source circuit proposed in this application are introduced. Figure 2 It is a structural schematic diagram of a high and low temperature compensation bandgap reference source circuit provided in an embodiment of the present application.

[0073] The high and low temperature compensation bandgap reference source circuit includes: a low temperature compensation module 2, a high temperature compensation module 3 and a reference module 1, the low temperature compensation module 2 includes a low temperature mirror unit 30 and a low temperature adjustment unit 20, the high temperature compensation module 3 includes a high temperature mirror unit 50 and a high temperature adjustment unit 40, the reference module 1 includes an operational amplifier unit 60 and a reference adjustment unit 10, the low temperature adjustment unit 20 includes a first transistor Q1, and the high temperature adjustment unit 40 includes a second transistor Q2.

[0074] Optionally, the first end of the low temperature mirror unit 30 is used to access the power signal VDD, the second end of the low temperature mirror unit 30 is connected to the first end of the reference adjustment unit 10, and the third end of the low temperature mirror unit 30 is connected to the first end of the low temperature adjustment unit 20.

[0075] Optionally, the second end of the low temperature adjustment unit 20 is used to access the power signal VDD, and the ground end of the low temperature adjustment unit 20 is grounded.

[0076] Optionally, the first end of the high-temperature mirror unit 50 is used to access the power supply signal VDD, the second end of the high-temperature mirror unit 50 is connected to the second end of the reference adjustment unit 10, the third end of the high-temperature mirror unit 50 is connected to the first end of the high-temperature adjustment unit 40, the fourth end of the high-temperature mirror unit 50 is connected to the second end of the high-temperature adjustment unit 40, the ground end of the high-temperature mirror unit 50 is grounded, and the ground end of the high-temperature adjustment unit 40 is grounded.

[0077] Optionally, the third end of the reference adjustment unit 10 is connected to the first end of the operational amplifier unit 60 , the fourth end of the reference adjustment unit 10 is connected to the second end of the operational amplifier unit 60 , and the ground end of the reference adjustment unit 10 is grounded.

[0078] Optionally, the third terminal of the operational amplifier unit 60 is used to connect to the power supply signal VDD, the fourth terminal of the operational amplifier unit 60 serves as the output port of the high and low temperature compensated bandgap reference circuit, and the ground terminal of the operational amplifier unit 60 is grounded.

[0079] Optionally, the low temperature adjustment unit 20 is used to generate a low temperature adjustment current based on the first current generated by the first transistor Q1 at different temperatures, the low temperature mirror unit 30 is used to send a low temperature mirror current to the reference adjustment unit 10 according to the low temperature adjustment current, the high temperature adjustment unit 40 is used to generate a high temperature adjustment current based on the second transistor Q2 at different temperatures when the temperature is higher than the preset temperature threshold, the high temperature mirror unit 50 is used to send a high temperature mirror current to the reference adjustment unit 10 according to the high temperature adjustment current, and the reference adjustment unit 10 is used to send a reference voltage, a first adjustment voltage, and a second adjustment voltage to the operational amplifier unit 60 based on the high temperature mirror current and / or the low temperature mirror current, so that the operational amplifier unit 60 outputs a stable reference source voltage based on the reference voltage, the first adjustment voltage, and the second adjustment voltage.

[0080] Specifically, the V of the first transistor Q1 in the low temperature adjustment unit 20 BE has a negative temperature coefficient, that is, the higher the temperature, the lower the output adjustment current. Utilizing the characteristic of the negative temperature coefficient of V in the first transistor Q1 of the low temperature adjustment unit 20 BE a low temperature adjustment current is generated based on the first current. After the low temperature mirror unit 30 performs mirror conversion on the low temperature adjustment current to generate a low temperature mirror current, it is superimposed on the current generated by the reference adjustment unit 10 to generate a first adjustment voltage.

[0081] Among them, the first current can be the collector current of the first transistor Q1. The low temperature adjustment current can be the base current of the first transistor Q1. The low temperature mirror unit 30 mirrors the base current of the first transistor Q1 into an integer multiple copy as the low temperature mirror current and then sends it to the reference adjustment unit 10, and the reference adjustment unit 10 generates a first adjustment voltage.

[0082] When the ambient temperature is low and does not reach the preset temperature threshold, the second transistor Q2 in the high temperature adjustment unit 40 does not conduct, so no high temperature adjustment current is generated, and no second adjustment voltage is generated. Therefore, when the ambient temperature is low, only the current in the low temperature part is compensated to offset the temperature coefficient at low temperatures.

[0083] When the ambient temperature rises to be greater than the preset temperature threshold, the second transistor Q2 in the high temperature adjustment unit 40 conducts. As the temperature rises, V BE decreases, the high temperature adjustment current increases. After the high temperature mirror unit 50 performs an integer multiple mirror copy on the high temperature adjustment current to generate a high temperature mirror current, it is superimposed on the current generated by the reference adjustment unit 10 to generate a second adjustment voltage.

[0084] In a high-temperature environment, the low-temperature regulation current value output by the low-temperature regulation unit 20 is low and tends to be stable, without bringing additional influence to the high-temperature compensation part.

[0085] The reference regulation unit 10 can generate a reference voltage. Sending the reference voltage to the operational amplifier unit 60 can obtain an uncompensated first-order bandgap reference voltage. Therefore, based on the high-temperature mirror current and / or the low-temperature mirror current, the reference regulation unit 10 can generate a first regulation voltage and / or a second regulation voltage, and then send the reference voltage, the first regulation voltage, and the second regulation voltage to the operational amplifier unit 60.

[0086] The operational amplifier unit 60 is used to sum the received voltages. Therefore, the operational amplifier unit 60 sums the reference voltage, the first regulation voltage, and the second regulation voltage sent by the reference regulation unit 10 and outputs a stable reference source voltage after compensation.

[0087] It should be noted that Figure 3 is a schematic diagram of the high and low temperature regulation current waveforms provided by this application. As Figure 3 shown, the low-temperature regulation current decreases as the temperature increases, the high-temperature regulation current increases as the temperature increases, and the high-temperature regulation current is 0 when the ambient temperature is lower than the preset ambient threshold, without compensation. Based on Figure 1 and Figure 3 shown, the low-temperature compensation module 2 and the high-temperature compensation module 3 can compensate the low-temperature part and the voltage of the low-temperature part of the first-order bandgap reference source circuit, so that the high and low temperature compensated bandgap reference source circuit can output a stable reference source voltage at different temperatures.

[0088] In this embodiment, the low-temperature adjustment unit of the high-low temperature compensation bandgap reference source circuit generates a low-temperature adjustment current based on the first current generated by the first transistor at different temperatures. The low-temperature mirror unit 30 sends a low-temperature mirror current to the reference adjustment unit according to the low-temperature adjustment current. The high-temperature adjustment unit generates a high-temperature adjustment current at different temperatures when the temperature is higher than a preset temperature threshold based on the second transistor. The high-temperature mirror unit sends a high-temperature mirror current to the reference adjustment unit according to the high-temperature adjustment current. The reference adjustment unit sends a first adjustment voltage and a second adjustment voltage to the operational amplifier unit based on the low-temperature mirror current and / or the high-temperature mirror current, so that the operational amplifier unit outputs a stable reference source voltage based on the first adjustment voltage and the second adjustment voltage. In this application, the low-temperature adjustment unit with only one transistor provides the low-temperature adjustment current, and when the ambient temperature is higher than the preset temperature threshold, the high-temperature adjustment unit with only one transistor provides the high-temperature adjustment current, so that the reference module can output a stable reference source voltage in various temperature scenarios. Since only one transistor is used in the low-temperature adjustment unit and the high-temperature adjustment unit, the circuit structure is simple, the power consumption is small, and the high-temperature adjustment unit only generates the high-temperature adjustment current when the ambient temperature is higher than the preset temperature threshold, so the power consumption is saved and the ability to resist changes in process, voltage, temperature and other factors is strong.

[0089] Next, refer to Figure 4 to introduce the specific structure of the high-low temperature compensation bandgap reference source circuit respectively. Among them, Figure 4 is a schematic structural diagram of another high-low temperature compensation bandgap reference source current provided by an embodiment of the present application.

[0090] As an optional implementation manner, the reference adjustment unit 10 includes: a first resistor R1, a second resistor R2, and a third transistor Q3.

[0091] Optionally, the first end of the first resistor R1 is connected to the first end of the operational amplifier unit 60, and the second end of the first resistor R1 is respectively connected to the collector of the third transistor Q3, the base of the third transistor Q3, and the second end of the low-temperature mirror unit 30.

[0092] Optionally, the base of the third transistor Q3 is further connected to the first end of the operational amplifier unit 60, and the emitter of the third transistor Q3 is respectively connected to the second end of the high-temperature mirror unit 50 and the first end of the second resistor R2.

[0093] Optionally, the second end of the second resistor R2 is grounded.

[0094] Specifically, both ends of the first resistor R1 can be respectively connected to the bases of two transistors of the same material, and different currents flow through them, so that the voltage across the first resistor R1 is the first voltage difference. Since the base-emitter voltage of the transistor has a negative temperature coefficient, and the difference between two voltages with negative temperature coefficients has a positive temperature coefficient, therefore, the current flowing through both ends of the first resistor R1 has a positive temperature coefficient.

[0095] The base-emitter voltage of the third transistor Q3 has a negative temperature coefficient.

[0096] Optionally, the sum of the first resistor R1 and the second resistor R2 can be calculated, and the ratio of the sum to the first resistor R1 can be used as the weighting coefficient of the first voltage difference, and 1 can be used as the weighting coefficient of the base-emitter voltage of the third transistor Q3.

[0097] Therefore, and are sent to the operational amplifier unit 60 as the reference voltage. After the operational amplifier unit 60 sums up the reference voltages, the reference source voltage can be obtained. The reference source voltage is the first-order bandgap reference voltage without temperature compensation. Exemplarily, the reference source voltage can be expressed by the following formula (3):

[0098] (3)

[0099] Wherein, is the reference source voltage, is the base-emitter voltage of the third transistor Q3, is the voltage across the first resistor R1 as the first voltage difference.

[0100] It should be noted that the first-order bandgap reference voltage can be adjusted by adjusting the resistance values of the first resistor R1 and the second resistor R2. However, the first-order bandgap reference voltage is not compensated for high and low temperatures and cannot directly output a stable voltage. Therefore, it is necessary to compensate the reference source voltage through the high-temperature compensation module 3 and the low-temperature compensation module 2 to make the reference source voltage stable.

[0101] In this embodiment, a reference voltage is generated by the first resistor, the second resistor and the third transistor, and the first-order bandgap reference voltage can be obtained by summing up the reference voltages through the operational amplifier unit, so that the high and low temperature compensated bandgap reference source circuit outputs the uncompensated reference source voltage.

[0102] Continuing to refer to Figure 4 , the low-temperature adjustment unit 20 includes a first transistor Q1 and a third resistor R3.

[0103] Optionally, the base of the first transistor Q1 is connected to the third terminal of the low-temperature mirror unit 30. The collector of the first transistor Q1 is used to access the power supply signal VDD. The emitter of the third transistor Q3 is connected to the first terminal of the third resistor R3, and the other end of the third resistor R3 is grounded.

[0104] Specifically, based on the transistor characteristics, the current flowing through the base of the first transistor Q1 can be the ratio of the current flowing through the collector of the first transistor Q1 to the current gain coefficient of the first transistor Q1. Also, since the current flowing through the first transistor Q1 is equal to the ratio of the difference between the base voltage of the first transistor Q1 and the base-emitter voltage of the first transistor Q1 to the third resistor R3, therefore, the current flowing through the base of the first transistor Q1 can be expressed by the following formula (4):

[0105] (4)

[0106] Wherein, is the current flowing through the collector of the first transistor Q1, is the current gain coefficient of the first transistor Q1, and the current gain coefficient increases with the increase of temperature, is the base voltage of the first transistor Q1, is the base-emitter voltage of the first transistor Q1, is the resistance value of the third resistor R3.

[0107] Optionally, can be used as the low-temperature regulation current. When the ambient temperature rises, decreases, increases, but the increasing amplitude is smaller than the decreasing amplitude. Therefore, when the ambient temperature rises, gradually decreases.

[0108] The low-temperature mirror unit 30 is used to mirror the received current and output it. Since the base of the first transistor Q1 is connected to the third terminal of the low-temperature mirror unit 30, therefore, through the low-temperature mirror unit 30, a low-temperature mirror current that is an integer multiple of can be output, so that the reference regulation unit 10 generates a first regulation voltage for compensating the first-order bandgap reference source voltage in a low-temperature environment.

[0109] In this embodiment, by connecting the first transistor and the third resistor in series, a low-temperature regulation current that decreases as the ambient temperature increases can be obtained. By compensating the bandgap reference source circuit with the first regulation voltage generated based on the low-temperature regulation current, a stable reference source voltage can be output at low temperatures. Since the low-temperature regulation unit only uses the first transistor and the third resistor, the circuit is simple and the power consumption is small.

[0110] Further, the low-temperature mirror unit 30 includes a first device group Z1, a second MOS transistor M2, and a fourth resistor R4. The first device group Z1 includes at least one first MOS transistor M1. As Figure 4 shown, Figure 4 Taking the example that the first device group Z1 includes one first MOS transistor M1-1 for illustration. Hereinafter, the first MOS transistors are uniformly referred to as M1.

[0111] Optionally, the source electrodes of the first MOS transistors M1 and the source electrode of the second MOS transistor M2 are used to connect to the power supply signal VDD. The gate electrodes of the first MOS transistors M1 are respectively connected to the gate electrode and the drain electrode of the second MOS transistor M2. The drain electrodes of the first MOS transistors M1 are connected to the second end of the first resistor R1.

[0112] The drain electrode of the second MOS transistor M2 is also connected to the first end of the fourth resistor R4. The other end of the fourth resistor R4 is connected to the base electrode of the first transistor Q1.

[0113] The low-temperature mirror unit 30 is configured to perform an integer multiple mirror conversion on the low-temperature regulation current based on the number of the first MOS transistors M1 in the first device group Z1 to generate a low-temperature mirror current.

[0114] Among them, the fourth resistor R4 plays a current limiting role for the base electrode of the first transistor Q1 in the low-temperature regulation unit 20.

[0115] Optionally, the first MOS transistors M1 and the second MOS transistor M2 can be completely identical MOS transistors. They work under the same bias conditions and can copy the current in the branch of the second MOS transistor M2 to the branches where the first MOS transistors M1 are located in integer multiples. Specifically, the current output by the drain electrode of each first MOS transistor M1 is an integer multiple of the drain current of the second MOS transistor M2, and the multiple is determined by the number of the first MOS transistors M1 in the first device group Z1. Exemplarily, if the first device group Z1 includes 4 first MOS transistors M1, then each first MOS transistor M1 generates and outputs a current that is 4 times the drain current of the second MOS transistor M2. The current at the drain electrode of the second MOS transistor M2 is the low-temperature regulation current output by the low-temperature regulation unit 20. Then, based on the connection relationship between the first MOS transistor M1 and the second MOS transistor M2, the low-temperature regulation current can be mirrored to the drain electrode of the first MOS transistor M1 to obtain a low-temperature mirror current.

[0116] Optionally, the drain of each first MOS transistor M1 is connected to the second terminal of the first resistor R1 in the reference adjustment unit 10. The reference adjustment unit 10 generates a first adjustment voltage based on the low-temperature mirror current, and supplies the reference voltage and the first adjustment voltage to the operational amplifier unit 60, so that the operational amplifier unit 60 adds the reference voltage and the first adjustment voltage to obtain a reference source voltage after low-temperature compensation. The reference source voltage after low-temperature compensation can be expressed by the following formula (5):

[0117] (5)

[0118] Wherein, is the reference source voltage after low-temperature compensation, is the first adjustment voltage.

[0119] It should be noted that the first adjustment voltage can be adjusted by adjusting the number of the first MOS transistors M1 in the first device group Z1, so as to adjust the amplitude of the compensation for the reference source voltage in the low-temperature environment.

[0120] In this embodiment, the fourth resistor is used to limit the current of the low-temperature adjustment current output by the low-temperature adjustment unit. The low-temperature adjustment current is mirrored by each first MOS transistor and the second MOS transistor to obtain a low-temperature mirror current. The reference adjustment unit can generate a first adjustment voltage based on the low-temperature mirror current, so that the operational amplifier unit obtains a reference source voltage with low-temperature compensation based on the reference voltage and the first adjustment voltage.

[0121] Next, the high-temperature compensation part will be described. Referring to Figure 4 as shown, the high-temperature adjustment unit 40 includes a second transistor Q2 and a fifth resistor R5.

[0122] Optionally, the collector of the second transistor Q2 is connected to the third terminal of the high-temperature mirror unit 50, the emitter of the second transistor Q2 is connected to the first terminal of the fifth resistor R5, the base of the second transistor Q2 is connected to the fourth terminal of the high-temperature mirror unit 50, and the collector current of the second transistor Q2 is proportional to the base voltage.

[0123] Specifically, since the emitter of the second transistor Q2 is connected to the third terminal of the high-temperature mirror unit 50 and the base of the second transistor Q2 is connected to the fourth terminal of the high-temperature mirror unit 50, and the high-temperature mirror unit 50 is used to mirror the received current and output it, the high-temperature mirror unit 50 can mirror the emitter current of the second transistor Q2 received at the third terminal and output it through the fourth terminal, so that the emitter current of the second transistor Q2 is proportional to the base voltage.

[0124] Optionally, the other end of the fifth resistor R5 is grounded.

[0125] Specifically, since the base-emitter voltage of the second transistor Q2 changes with a negative temperature coefficient, when the temperature increases, the base-emitter voltage of the second transistor Q2 decreases, and then the collector current of the second transistor Q2 increases. Since the collector current of the second transistor Q2 is proportional to the emitter current and the base voltage, the base voltage of the second transistor Q2 increases.

[0126] It should be noted that a transistor has a conduction voltage threshold, and the transistor will conduct only when the base voltage of the transistor increases to the conduction voltage threshold.

[0127] Therefore, when the ambient temperature is low, the base voltage of the second transistor Q2 is small and is not sufficient to turn on the second transistor Q2. When the ambient temperature gradually rises to the preset temperature threshold, the base voltage of the second transistor Q2 reaches the conduction voltage threshold, and at this time, the second transistor Q2 conducts.

[0128] Based on the transistor characteristics, the collector current of the second transistor Q2 can be expressed by the following formula (6):

[0129] (6)

[0130] Where, is the collector current of the second transistor Q2, is the base voltage of the second transistor Q2, is the base-emitter voltage of the second transistor Q2, is the resistance value of the fifth resistor R5.

[0131] Based on formula (6), as the temperature increases, gradually decreases, gradually increases. Therefore, is used as the high-temperature regulation current. After the high-temperature mirror unit 50 mirrors and converts the high-temperature regulation current to generate a high-temperature mirror current, the high-temperature mirror current is sent to the reference regulation unit 10, so that the reference regulation unit 10 generates a second regulation voltage based on the high-temperature mirror current.

[0132] On the basis of low-temperature compensation for the first-order bandgap reference circuit, after the reference regulation unit 10 sends the reference voltage, the first regulation voltage, and the second regulation voltage to the operational amplifier unit 60, the operational amplifier unit 60 generates and outputs a bandgap reference voltage compensated for high and low temperatures.

[0133] In this embodiment, through the second transistor and the fifth resistor, a high-temperature regulation current with a positive temperature coefficient with respect to temperature is generated when the ambient temperature is greater than a preset temperature threshold, thereby providing high-temperature compensation for the transmission line reference source circuit. Since the high-temperature regulation circuit only uses the second transistor and the fifth resistor, the circuit is simple, with low power consumption. Moreover, since the second transistor conducts only when the ambient temperature reaches the preset temperature threshold, further power consumption is saved, and it has the advantages of being resistant to process, voltage, and temperature variations.

[0134] Furthermore, next, reference is made to Figure 4 to introduce the high-temperature mirror unit 50. The high-temperature mirror unit 50 includes a third MOS transistor M3, a second device group Z2, a fifth MOS transistor M5, and a sixth resistor R6. The second device group Z2 includes at least one fourth MOS transistor M4. As Figure 4 shown, Figure 4 take the case where the second device group Z2 includes one fourth MOS transistor M4-1 as an example for illustration. Hereinafter, the fourth MOS transistor is uniformly referred to as M4.

[0135] Optionally, the source electrodes of the third MOS transistor M3, each fourth MOS transistor M4, and the fifth MOS transistor M5 are respectively used to connect to the power supply signal VDD.

[0136] Optionally, the gate of the third MOS transistor M3 is connected to the gates of each fourth MOS transistor M4, the gate of the fifth MOS transistor M5, and the drain of the third MOS transistor M3. The drain of the third MOS transistor M3 is also connected to the collector of the second transistor Q2.

[0137] Optionally, the drain of each fourth MOS transistor M4 is connected to the first end of the second resistor R2. The drain of the fifth MOS transistor M5 is connected to the base of the second transistor Q2 and the first end of the sixth resistor R6 respectively.

[0138] Optionally, the other end of the sixth resistor R6 is grounded.

[0139] Optionally, the high-temperature mirror unit 50 is configured to perform an integer multiple mirror conversion on the high-temperature regulation current based on the number of fourth MOS transistors M4 in the second device group Z2 to generate a high-temperature mirror current.

[0140] Specifically, the gates of the third MOS transistor M3, each fourth MOS transistor M4, and the fifth MOS transistor M5, as well as the drain of the third MOS transistor M3, are connected, and the source electrode potentials are the same. Therefore, the currents at the drains of each fourth MOS transistor M4 and the fifth MOS transistor M5 are the same as the current at the drain of the third MOS transistor M3.

[0141] As the temperature rises, the collector current of the second transistor Q2 gradually increases. The collector current of the second transistor Q2 is mirrored to the branch where the sixth resistor R6 is located through the third MOS transistor M3 and the fifth MOS transistor M5, causing the base voltage of the second transistor Q2 to gradually increase until it breaks through the conduction voltage threshold, and the second transistor Q2 conducts. As the temperature continues to rise, the collector current of the second transistor Q2 continues to increase, and the base voltage of the second transistor Q2 continues to increase, accelerating the conduction of the second transistor Q2. At this time, each fourth MOS transistor M4 mirrors and converts the drain current of the third MOS transistor M3 to generate a high-temperature mirror current. Specifically, the multiple of the conversion of the drain current of the third MOS transistor M3 is determined based on the number of fourth MOS transistors M4, and the high-temperature adjustment current is converted into a high-temperature mirror current according to the multiple. Exemplarily, if there are 4 fourth MOS transistors M4 in the second device group Z2, the high-temperature mirror unit 50 performs an integer multiple replication on the collector current of the second transistor Q2, that is, the high-temperature adjustment current to output 4 times of to obtain the high-temperature mirror current.

[0142] The drain of each fourth MOS transistor M4 is connected to the first end of the second resistor R2, that is, the high-temperature mirror current is sent to the reference adjustment unit 10, and the reference adjustment unit 10 generates a second adjustment voltage based on the high-temperature mirror current.

[0143] The reference adjustment unit 10 sends the reference voltage, the first adjustment voltage, and the second adjustment voltage to the operational amplifier unit 60, so that the operational amplifier unit 60 adds the reference voltage, the first adjustment voltage, and the second adjustment voltage to obtain the reference source voltage after low-temperature compensation and high-temperature compensation. The reference source voltage after low-temperature compensation and high-temperature compensation can be expressed by the following formula (7):

[0144] (7)

[0145] Wherein, is the reference source voltage after low-temperature compensation and high-temperature compensation, is the high-temperature mirror current, is the second adjustment voltage.

[0146] It should be noted that the second adjustment voltage can be adjusted by adjusting the number of fourth MOS transistors M4 in the second device group Z1, so as to adjust the amplitude of the compensation for the reference source voltage in a high-temperature environment.

[0147] In this embodiment, the collector current of the second transistor is mirrored and converted through the third MOS transistor, each fourth MOS transistor, the fifth MOS transistor, and the sixth resistor. While providing the conduction voltage of the second transistor, a high-temperature mirror current is generated, thereby performing high-temperature compensation on the bandgap reference source voltage.

[0148] As an alternative embodiment, Figure 5 is a schematic waveform diagram of a compensated reference source voltage provided by an embodiment of the present application. As Figure 5 shown, the temperature coefficient of the bandgap reference source voltage is reduced in both high-temperature and low-temperature environments, obtaining a reference source voltage with higher accuracy.

[0149] Next, with reference to Figure 4 the specific structure of the operational amplifier unit 60 will be introduced. The operational amplifier unit 60 includes: a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, an operational amplifier A1, a fourth transistor Q4, a fifth transistor Q5, and a sixth MOS transistor M6.

[0150] Optionally, the first end of the seventh resistor R7 and the first end of the eighth resistor R8 are used to connect to the power supply signal VDD. The second end of the seventh resistor R7 is respectively connected to the first input terminal of the operational amplifier A1 and the collector of the fourth transistor Q4. The second end of the eighth resistor R8 is respectively connected to the second input terminal of the operational amplifier A1 and the collector of the fifth transistor Q5.

[0151] Optionally, the base of the fourth transistor Q4 is connected to the third terminal of the reference adjustment unit 10. The base of the fifth transistor Q5 is connected to the first end of the ninth resistor R9. The second end of the ninth resistor R9 is respectively connected to the source of the sixth MOS transistor M6 and the fourth terminal of the reference adjustment unit 10, and is connected to the output port of the high-low temperature compensated bandgap reference source circuit. The emitters of the fourth transistor Q4 and the fifth transistor Q5 are both connected to the first end of the eleventh resistor R11, and the second end of the eleventh resistor R11 is grounded.

[0152] Optionally, the output terminal of the operational amplifier A1 is connected to the gate of the sixth MOS transistor M6. The drain of the sixth MOS transistor M6 is connected to the second end of the tenth resistor R10, and the first end of the tenth resistor R10 is connected to the power supply signal VDD.

[0153] Specifically, when the fourth transistor Q4 and the fifth transistor Q5 have the same structure, the voltage across the first resistor R1 can be made the difference between the base-emitter voltage of the fourth transistor Q4 and the base-emitter voltage of the fifth transistor Q5. Since both the base-emitter voltage of the fourth transistor Q4 and the base-emitter voltage of the fifth transistor Q5 are negative temperature coefficients, the difference between the two is a positive temperature coefficient.

[0154] The operational amplifier A1 receives the voltages at the first receiving terminal and the second receiving terminal, adds them up, and sends the output voltage to the gate of the sixth MOS transistor M6. The source of the sixth MOS transistor M6 outputs the reference source voltage.

[0155] Since the low-temperature compensation module 2 and the high-temperature compensation module 3 respectively provide a low-temperature mirror current and a high-temperature mirror current to the reference adjustment unit 10, so that the reference adjustment unit 10 generates a first adjustment voltage and a second adjustment voltage, the operational amplifier A1 adds the reference voltage, the first adjustment voltage and the second adjustment voltage to obtain a reference source voltage, and outputs the reference source voltage to the output port through the sixth MOS transistor M6, so that the high-low temperature compensation bandgap reference source circuit outputs a stable reference source voltage at different temperatures.

[0156] In this embodiment, the reference voltage, the first adjustment voltage and the second adjustment voltage sent by the reference adjustment unit are added through the seventh resistor, the eighth resistor, the ninth resistor, the tenth resistor, the eleventh resistor, the operational amplifier, the fourth transistor, the fifth transistor and the sixth MOS transistor, and a reference source voltage that is stable at different temperatures is output.

[0157] As an optional implementation manner, as Figure 6 shown, the high-low temperature compensation bandgap reference source circuit further includes a startup module. Among them, Figure 6 is a schematic structural diagram of another high-low temperature compensation bandgap reference source circuit provided by an embodiment of the present application.

[0158] Optionally, the first end of the startup module 70 is used to connect to the power supply signal VDD.

[0159] Optionally, the second end of the startup module 70 is connected to the fifth end of the operational amplifier unit 60, the third end of the startup module 70 is connected to the fourth end of the operational amplifier unit 60, and the grounded end of the startup module 70 is grounded.

[0160] Optionally, the startup module 70 is used to ensure normal startup and stable operation of the high-low temperature compensation bandgap reference source circuit during the power-on process. Specifically, during the rising process of the power supply signal VDD, since the power supply signal VDD gradually rises, the bandgap reference source circuit may not be able to work directly normally. At this time, the startup module 70 provides a temporary bias current or voltage through the operational amplifier unit 60 to make the bandgap reference source circuit work normally and gradually stabilize. Among them, the fifth end of the operational amplifier unit is the input end, and the operational amplifier unit can perform arithmetic amplification on the current received at the fifth end and output it to the fourth end, that is, the output port. Once the bandgap reference source circuit starts to work normally, its output voltage gradually replaces the temporary bias provided by the startup module 70, thereby ensuring the stability and reliability of the circuit system.

[0161] In this embodiment, the startup module provides a temporary bias voltage for the high-low temperature compensation bandgap reference source circuit and stops delivering the temporary bias when the power supply signal VDD is stable, thereby providing a startup signal for the high-low temperature compensation bandgap reference source circuit and making the output voltage of the circuit stable.

[0162] Furthermore, as Figure 7As shown, the startup module 70 includes: the twelfth resistor R12, the thirteenth resistor R13, the fourteenth resistor R14, the seventh MOS transistor M7, the eighth MOS transistor M8, the ninth MOS transistor M9, the tenth MOS transistor M10, the eleventh MOS transistor M11, the twelfth MOS transistor M12, and the sixth transistor Q6. Among them, Figure 7 is a schematic structural diagram of a startup module 70 provided by an embodiment of the present application.

[0163] Optionally, the first end of the twelfth resistor R12 is connected to the power supply signal VDD, and the second end of the twelfth resistor R12 is respectively connected to the drain of the seventh MOS transistor M7, the gate of the seventh MOS transistor M7, and the gate of the eighth MOS transistor M8.

[0164] Optionally, the source of the seventh MOS transistor M7 is respectively connected to the first end of the thirteenth resistor R13, the gate of the eleventh MOS transistor M11, and the gate of the twelfth MOS transistor M12.

[0165] Optionally, the drain of the eighth MOS transistor M8 is respectively connected to the drain of the ninth MOS transistor M9 and the drain of the twelfth MOS transistor M12, and the source of the eighth MOS transistor M8 is connected to the fifth end of the operational amplifier unit 60.

[0166] Optionally, the sources of the ninth MOS transistor M9 and the tenth MOS transistor M10 are respectively connected to the power supply signal VDD, the gate of the ninth MOS transistor M9 is respectively connected to the gate and the drain of the tenth MOS transistor M10, and the drain of the tenth MOS transistor M10 is further connected to the collector of the sixth transistor Q6.

[0167] Optionally, the emitter of the sixth transistor Q6 is connected to the first end of the fourteenth resistor R14, and the base of the sixth transistor Q6 is connected to the fourth end of the operational amplifier unit 60.

[0168] Optionally, the second end of the fourteenth resistor R14 is grounded.

[0169] Optionally, the second end of the thirteenth resistor R13 is connected to the drain of the eleventh MOS transistor M11, and the sources of the eleventh MOS transistor M11 and the twelfth MOS transistor M12 are grounded.

[0170] Specifically, during the rising process of the power supply signal VDD, when the power supply signal VDD is greater than the preset startup threshold, a current starts to flow in the branch where the twelfth resistor R12 is located. If the branch where the ninth MOS transistor M9 is located needs to conduct, then the eighth MOS transistor M8 needs to draw current from the fifth terminal of the operational amplifier unit 60. The current at the fourth terminal of the operational amplifier unit 60 decreases, and the voltage drops, so the output of the operational amplifier unit 60 rises to provide a temporary bias. Since the fourth terminal of the operational amplifier unit 60 is the output port of the high and low temperature compensated bandgap reference source circuit, the base voltage of the sixth transistor Q6 gradually increases until it conducts. When the sixth transistor Q6 conducts, the current in the branch where the fourteenth resistor R14 is located gradually increases, and the drain current of the ninth MOS transistor M9 mirrors the drain current of the tenth MOS transistor M10, so that the eighth MOS transistor M8 does not need to draw current from the fifth terminal of the operational amplifier unit 60, and the eighth MOS transistor M8 turns off, stopping to provide a startup signal to the power amplifier unit. The output voltage of the bandgap reference source circuit gradually replaces the temporary bias provided by the startup module 70, the circuit output is stable, and the startup circuit is completed.

[0171] In this embodiment, the twelfth resistor, the thirteenth resistor, the fourteenth resistor, the seventh MOS transistor, the eighth MOS transistor, the ninth MOS transistor, the tenth MOS transistor, the eleventh MOS transistor, the twelfth MOS transistor, and the sixth transistor are used to provide the bias voltage during startup. When the power supply signal is stable, the startup module stops providing the bias voltage so that the reference source voltage output by the high and low temperature compensated bandgap reference source circuit is stable.

[0172] The embodiment of the present application also provides a conversion device, and the conversion device includes the above-mentioned high and low temperature compensated bandgap reference source circuit.

[0173] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered by the protection scope of the present application.

Claims

1. A high and low temperature compensated bandgap reference circuit, characterized in that, Including: A low-temperature compensation module, a high-temperature compensation module, and a reference module. The low-temperature compensation module includes a low-temperature mirror unit and a low-temperature adjustment unit. The high-temperature compensation module includes a high-temperature mirror unit and a high-temperature adjustment unit. The reference module includes an operational amplifier unit and a reference adjustment unit. The low-temperature adjustment unit includes a first transistor, and the high-temperature adjustment unit includes a second transistor; The first end of the low-temperature mirror unit is used to access a power supply signal. The second end of the low-temperature mirror unit is connected to the first end of the reference adjustment unit. The third end of the low-temperature mirror unit is connected to the first end of the low-temperature adjustment unit; The second end of the low-temperature adjustment unit is used to access the power supply signal, and the grounded end of the low-temperature adjustment unit is grounded; The first end of the high-temperature mirror unit is used to access the power supply signal. The second end of the high-temperature mirror unit is connected to the second end of the reference adjustment unit. The third end of the high-temperature mirror unit is connected to the first end of the high-temperature adjustment unit. The fourth end of the high-temperature mirror unit is connected to the second end of the high-temperature adjustment unit. The grounded end of the high-temperature mirror unit is grounded, and the grounded end of the high-temperature adjustment unit is grounded; The third end of the reference adjustment unit is connected to the first end of the operational amplifier unit. The fourth end of the reference adjustment unit is connected to the second end of the operational amplifier unit. The grounded end of the reference adjustment unit is grounded; The third end of the operational amplifier unit is used to access the power supply signal. The fourth end of the operational amplifier unit serves as the output port of the high-low temperature compensated bandgap reference source circuit. The grounded end of the operational amplifier unit is grounded; The low-temperature adjustment unit is used to generate a low-temperature adjustment current based on a first current generated by the first transistor at different temperatures. The low-temperature mirror unit is used to send a low-temperature mirror current to the reference adjustment unit according to the low-temperature adjustment current. The high-temperature adjustment unit is used to generate a high-temperature adjustment current at different temperatures when the temperature is higher than a preset temperature threshold based on the second transistor. The high-temperature mirror unit is used to send a high-temperature mirror current to the reference adjustment unit according to the high-temperature adjustment current. The reference adjustment unit is used to send a reference voltage, a first adjustment voltage, and a second adjustment voltage to the operational amplifier unit based on the high-temperature mirror current and / or the low-temperature mirror current, so that the operational amplifier unit outputs a stable reference source voltage based on the reference voltage, the first adjustment voltage, and the second adjustment voltage; The reference adjustment unit includes: a first resistor, a second resistor, and a third transistor; The first end of the first resistor is connected to the first end of the operational amplifier unit. The second end of the first resistor is respectively connected to the collector of the third transistor, the base of the third transistor, and the second end of the low-temperature mirror unit; The base of the third transistor is also connected to the first end of the operational amplifier unit. The emitter of the third transistor is respectively connected to the second end of the high-temperature mirror unit and the first end of the second resistor; the second end of the second resistor is grounded; The reference source voltage after low-temperature compensation and high-temperature compensation is expressed by the following formula: , where is the reference source voltage after low-temperature compensation and high-temperature compensation, is the voltage across the first resistor, is the resistance value of the first resistor, is the resistance value of the second resistor, is the base-emitter voltage of the third transistor, is the low-temperature adjustment current, is the high-temperature adjustment current.

2. The high and low temperature compensated bandgap reference circuit according to claim 1, wherein The low-temperature adjustment unit further includes: a third resistor; The base of the first transistor is connected to the third terminal of the low-temperature mirror unit. The collector of the first transistor is used to access the power supply signal. The emitter of the third transistor is connected to the first end of the third resistor, and the other end of the third resistor is grounded.

3. The high and low temperature compensated bandgap reference circuit according to claim 2, wherein The low-temperature mirror unit includes: a first device group, a second MOS transistor, and a fourth resistor. The first device group includes at least one first MOS transistor; The sources of the first MOS transistors and the source of the second MOS transistor are used to access the power supply signal. The gates of the first MOS transistors are respectively connected to the gate and the drain of the second MOS transistor. The drains of the first MOS transistors are connected to the second end of the first resistor; The drain of the second MOS transistor is further connected to the first end of the fourth resistor, and the other end of the fourth resistor is connected to the base of the first transistor; The low-temperature mirror unit is used to perform an integer multiple mirror conversion on the low-temperature regulation current based on the number of first MOS transistors in the first device group to generate a low-temperature mirror current.

4. The high and low temperature compensated bandgap reference circuit according to claim 1, characterized in that, The high-temperature mirror unit includes: a third MOS transistor, a second device group, a fifth MOS transistor, and a sixth resistor. The second device group includes at least one fourth MOS transistor; The source of the third MOS transistor, the sources of the fourth MOS transistors, and the source of the fifth MOS transistor are respectively used to access the power supply signal; The gate of the third MOS transistor is respectively connected to the gates of the fourth MOS transistors, the gate of the fifth MOS transistor, and the drain of the third MOS transistor. The drain of the third MOS transistor is further connected to the collector of the second transistor; The drains of the fourth MOS transistors are connected to the first end of the second resistor. The drain of the fifth MOS transistor is respectively connected to the base of the second transistor and the first end of the sixth resistor; The other end of the sixth resistor is grounded; The high-temperature mirror unit is used to perform an integer multiple mirror conversion on the low-temperature regulation current based on the number of fourth MOS transistors in the second device group to generate a high-temperature mirror current.

5. The high and low temperature compensated bandgap reference circuit according to claim 1, characterized in that The operational amplifier unit includes: a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, an operational amplifier, a fourth transistor, a fifth transistor, and a sixth MOS transistor; The first end of the seventh resistor and the first end of the eighth resistor are used to access the power supply signal. The second end of the seventh resistor is respectively connected to the first input terminal of the operational amplifier and the collector of the fourth transistor. The second end of the eighth resistor is respectively connected to the second input terminal of the operational amplifier and the collector of the fifth transistor; The base of the fourth transistor is connected to the third terminal of the reference regulation unit. The base of the fifth transistor is connected to the first end of the ninth resistor. The second end of the ninth resistor is respectively connected to the source of the sixth MOS transistor and the fourth terminal of the reference regulation unit, and is connected to the output port of the high-low temperature compensation bandgap reference source circuit. The emitters of the fourth transistor and the fifth transistor are both connected to the first end of the eleventh resistor, and the second end of the eleventh resistor is grounded; The output terminal of the operational amplifier is connected to the gate of the sixth MOS transistor. The drain of the sixth MOS transistor is connected to the second terminal of the tenth resistor, and the first terminal of the tenth resistor is connected to a power supply signal.

6. The high and low temperature compensated bandgap reference circuit according to claim 1, wherein The high and low temperature compensated bandgap reference source circuit further includes: a startup module; The first terminal of the startup module is used to connect to the power supply signal; The second terminal of the startup module is connected to the fifth terminal of the operational amplifier unit, the third terminal of the startup module is connected to the fourth terminal of the operational amplifier unit, and the grounding terminal of the startup module is grounded.

7. The high and low temperature compensated bandgap reference circuit according to claim 6, characterized in that, The startup module includes: a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, and a sixth transistor; The first terminal of the twelfth resistor is connected to the power supply signal, and the second terminal of the twelfth resistor is respectively connected to the drain of the seventh MOS transistor, the gate of the seventh MOS transistor, and the gate of the eighth MOS transistor; The source of the seventh MOS transistor is respectively connected to the first terminal of the thirteenth resistor, the gate of the eleventh MOS transistor, and the gate of the twelfth MOS transistor; The drain of the eighth MOS transistor is respectively connected to the drain of the ninth MOS transistor and the drain of the twelfth MOS transistor, and the source of the eighth MOS transistor is connected to the fifth terminal of the operational amplifier unit; The sources of the ninth MOS transistor and the tenth MOS transistor are respectively connected to the power supply signal. The gate of the ninth MOS transistor is respectively connected to the gate and the drain of the tenth MOS transistor, and the drain of the tenth MOS transistor is further connected to the collector of the sixth transistor; The emitter of the sixth transistor is connected to the first terminal of the fourteenth resistor, and the base of the sixth transistor is connected to the fourth terminal of the operational amplifier unit; The second terminal of the fourteenth resistor is grounded; The second terminal of the thirteenth resistor is connected to the drain of the eleventh MOS transistor, and the sources of the eleventh MOS transistor and the twelfth MOS transistor are grounded.

8. A conversion device, characterized in that, The conversion device includes the high and low temperature compensated bandgap reference source circuit according to any one of claims 1-7.

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