Interlaced double-grid slow-wave structure and traveling-wave tube with it

Abstract

This invention provides an interleaved dual-grid slow-wave structure and a traveling wave tube having the same. The interleaved dual-grid slow-wave structure includes: a first slow-wave structure comprising a first grid portion and a second grid portion, with a first electronic channel between them, and the grids are staggered; a second slow-wave structure comprising a third grid portion and a fourth grid portion, with a second electronic channel between them, and the grids are also staggered; and a connecting structure, connected on one side to the first slow-wave structure and on the other side to the second slow-wave structure, with a coupling cavity disposed thereon, the coupling cavity being connected to both the first and second electronic channels, and the ratio of the resonant frequency of the coupling cavity to the center operating frequency of the interleaved dual-grid slow-wave structure being between 0.95 and 1.05. The technical solution provided by this invention can solve the technical problem of low output power in existing interleaved dual-grid slow-wave structures.

Description

Technical Field

[0001] This invention relates to the field of vacuum electronic device technology, and more specifically, to an interleaved dual-grid slow-wave structure and a traveling-wave tube having the same. Background Technology

[0002] Currently, in vacuum electronic devices such as traveling wave tubes (TWTs), microwaves and electrons exchange energy through beam-beam interaction (BBE), thereby amplifying microwave signals. Slow-wave structures play a particularly important role in TWTs, as their performance determines the efficiency of the BBE, which is where energy transfer occurs between the high-frequency electric field and the electron beam. A suitable slow-wave structure can enhance the BBE effect and significantly improve the device's performance.

[0003] However, the conventional rectangular staggered dual-grid slow-wave structure exhibits low beam-wave interaction efficiency, resulting in insufficient output power. To improve the output power and efficiency of the staggered dual-grid slow-wave structure, existing technologies enhance its coupling impedance and dispersion characteristics by modifying the rectangular grid structure with different structural variations. However, this approach complicates the slow-wave structure, increases fabrication difficulty, and raises manufacturing costs. Summary of the Invention

[0004] The main objective of this invention is to provide an interleaved dual-grid slow-wave structure and a traveling wave tube having the same, so as to solve the technical problem of low output power of the existing interleaved dual-grid slow-wave structure.

[0005] To achieve the above objectives, according to one aspect of the present invention, an interleaved dual-grid slow-wave structure is provided, comprising:

[0006] The first slow-wave structure includes a first grating portion and a second grating portion located below and spaced apart from the first grating portion, wherein a first electronic channel is provided in the gap between the first grating portion and the second grating portion; the gratings of the first grating portion and the gratings of the second grating portion are misaligned.

[0007] The second slow-wave structure includes a third gate portion and a fourth gate portion located below and spaced apart from the third gate portion. A second electronic channel is provided in the gap between the third gate portion and the fourth gate portion. The gates of the third gate portion and the fourth gate portion are misaligned.

[0008] A connecting structure is provided, with one side connected to a first slow-wave structure and the other side connected to a second slow-wave structure; a coupling cavity is provided on the connecting structure, and both the first electronic channel and the second electronic channel are connected to the coupling cavity.

[0009] The ratio of the resonant frequency of the coupling cavity to the center operating frequency of the interleaved double-grid slow-wave structure is greater than or equal to 0.95 and less than or equal to 1.05.

[0010] Furthermore, the connection structure includes:

[0011] A first connecting structure and a second connecting structure are spaced apart from each other, with the first connecting structure located above the second connecting structure. A connecting electronic channel is provided in the gap between the first connecting structure and the second connecting structure. One end of the connecting electronic channel is connected to the first electronic channel, and the other end of the connecting electronic channel is connected to the second electronic channel.

[0012] Furthermore, a first cavity segment is provided on the first connecting structure, and a second cavity segment is provided on the second connecting structure opposite to the first cavity segment. The first cavity segment, the second cavity segment, and the gap between the first cavity segment and the second cavity segment form a coupling cavity.

[0013] Furthermore, along the first preset direction, the cross-section of the coupling cavity is rectangular; and / or,

[0014] Along the second preset direction, the cross-section of the coupling cavity is rectangular.

[0015] Furthermore, the coupling cavity has a cuboid structure, where a is the length of the coupling cavity, b is the height of the coupling cavity, and t is the width of the coupling cavity;

[0016] in, μ is the permeability, ε is the permittivity, and f is the center operating frequency of the interleaved double-gate slow-wave structure; and / or,

[0017] Along the direction from the first slow wave structure to the second slow wave structure, the distance between the middle part of the gate of the first gate body and the middle part of the gate of the second gate body is D; 0.1≤t / D≤1.5.

[0018] Furthermore, the coupling cavity has a cuboid structure, where a is the length of the coupling cavity and b is the height of the coupling cavity;

[0019] Where 0 < a / A ≤ 5, and A is the length of the staggered double-grating slow-wave structure; and / or,

[0020] 0 < b / B ≤ 5, where B is the height of the staggered double-grid slow-wave structure.

[0021] Furthermore, there are multiple coupling cavities, which are spaced apart along the direction from the first slow-wave structure to the second slow-wave structure;

[0022] In the direction from the first slow wave structure to the second slow wave structure, the distance between the middle parts of two adjacent coupling cavities is d, where d = n × v / f; n is a positive integer, v is the moving speed of electrons in the staggered double-grid slow wave structure, and f is the center operating frequency of the staggered double-grid slow wave structure.

[0023] Furthermore, the first slow-wave structure is made of a conductive material; and / or,

[0024] The second slow-wave structure is made of a conductive material; and / or,

[0025] The connection structure is made of conductive material.

[0026] Furthermore, the interleaved dual-grid slow-wave structure also includes:

[0027] A waveguide input channel and a waveguide output channel are provided. The waveguide input channel is disposed on a first slow-wave structure and is connected to a first electronic channel. The waveguide output channel is disposed on a second slow-wave structure and is connected to a second electronic channel. And / or,

[0028] A first microwave output channel is disposed on a first slow-wave structure, and the first microwave output channel is connected to a first electronic channel; the first microwave output channel is located on the side of the first slow-wave structure closer to the connecting structure; and / or...

[0029] The second microwave output channel is disposed on the second slow wave structure and is connected to the second electronic channel; the second microwave output channel is located on the side of the second slow wave structure close to the connecting structure.

[0030] According to another aspect of the present invention, a traveling wave tube is provided, comprising: the interleaved dual-grid slow wave structure provided above.

[0031] By introducing a coupling cavity between the first and second slow-wave structures using the technical solution of this invention, an additional interaction space can be provided without altering the original staggered double-grid structure design. The resonant frequency of the coupling cavity is designed to be close to the center operating frequency of the staggered double-grid slow-wave structure. This causes the electron beams passing through the slow-wave structure to cluster, generating an axial electric field within the coupling cavity, further interacting with the electron beams. The electron beams can effectively interact with the axial electric field within the coupling cavity as they pass through, thereby enhancing the electron clustering effect and significantly improving the efficiency of the beam-wave interaction. This enhanced beam-wave interaction efficiency directly leads to an increase in the output power of the traveling wave tube. The full interaction between the electron beams and the electric field generated in the coupling cavity makes the energy transfer from the electron beams to the microwave signal more efficient, thus increasing the saturated output power of the traveling wave tube. The introduction of the coupling cavity, through precise adjustment of its size and position, can optimize the dispersion characteristics of the entire slow-wave structure, making the phase velocity of the slow-wave structure closer to the phase velocity of the electron beam, reducing the impact of frequency offset on output performance. This not only increases output power but also enables the traveling wave tube to maintain high-efficiency output over a wider frequency range. Furthermore, this solution improves output performance by adding a coupling cavity while maintaining structural stability, avoiding the increased manufacturing difficulty and cost associated with complex structural designs. Therefore, the technical solution of this invention can solve the technical problem of low output power in existing interleaved dual-grid slow-wave structures. Attached Figure Description

[0032] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0033] Figure 1 A partial structural schematic diagram of the interlaced dual-grid slow-wave structure provided according to Embodiment 1 of the present invention is shown;

[0034] Figure 2 A cross-sectional schematic diagram of an interlaced dual-grid slow-wave structure according to Embodiment 1 of the present invention is shown;

[0035] Figure 3 A cross-sectional schematic diagram of the staggered dual-grid slow-wave structure provided according to Embodiment 1 of the present invention is shown from another perspective.

[0036] Figure 4 A schematic diagram of the coupled cavity of the interlaced dual-grid slow-wave structure provided according to Embodiment 1 of the present invention is shown;

[0037] Figure 5 A schematic diagram of the electric field distribution of the coupled cavity of the staggered dual-grid slow-wave structure provided according to Embodiment 1 of the present invention is shown;

[0038] Figure 6 A schematic diagram of the saturated output power simulation results of the interleaved dual-grid slow-wave structure provided according to Embodiment 1 of the present invention is shown;

[0039] Figure 7 A schematic diagram showing the output power and frequency relationship between the interleaved dual-grid slow-wave structure provided according to Embodiment 1 of the present invention and the interleaved dual-grid slow-wave structure in the prior art is illustrated.

[0040] The above figures include the following reference numerals:

[0041] 10. First slow-wave structure;

[0042] 11. First grid body section;

[0043] 12. Second gate body section;

[0044] 13. First electronic channel;

[0045] 20. Second slow-wave structure;

[0046] 21. Third grid section;

[0047] 22. Fourth grid section;

[0048] 23. Second electronic channel;

[0049] 30. Connection structure;

[0050] 31. Coupled cavity;

[0051] 32. First connection structure;

[0052] 321. First cavity segment;

[0053] 33. Second connection structure;

[0054] 331. Second cavity segment;

[0055] 34. Connect the electronic channel;

[0056] 41. Waveguide input channel;

[0057] 42. Waveguide output channel;

[0058] 43. First microwave export channel;

[0059] 44. Second microwave export channel. Detailed Implementation

[0060] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0061] like Figures 1 to 7 As shown, Embodiment 1 of the present invention provides an interleaved dual-gate slow-wave structure, which includes a first slow-wave structure 10, a second slow-wave structure 20, and a connecting structure 30. The first slow-wave structure 10 includes a first gate portion 11 and a second gate portion 12 located below and spaced apart from the first gate portion 11. A first electronic channel 13 is provided in the gap between the first gate portion 11 and the second gate portion 12; the gate of the first gate portion 11 and the gate of the second gate portion 12 are misaligned. The second slow-wave structure 20 includes a third gate portion 21 and a fourth gate portion 22 located below and spaced apart from the third gate portion 21. A second electronic channel 23 is provided in the gap between the third gate portion 21 and the fourth gate portion 22; the gate of the third gate portion 21 and the gate of the fourth gate portion 22 are misaligned. One side of the connecting structure 30 is connected to the first slow-wave structure 10, and the other side is connected to the second slow-wave structure 20. A coupling cavity 31 is provided on the connecting structure 30, and the first electronic channel 13 and the second electronic channel 23 are both connected to the coupling cavity 31. The ratio of the resonant frequency of the coupling cavity 31 to the center operating frequency of the interleaved double-grid slow-wave structure is greater than or equal to 0.95 and less than or equal to 1.05.

[0062] The staggered double-grid slow-wave structure provided in Embodiment 1 of this invention, by introducing a coupling cavity 31 between the first slow-wave structure 10 and the second slow-wave structure 20, provides an additional interaction space without altering the original staggered double-grid structure design. The resonant frequency of the coupling cavity 31 is designed to be close to the center operating frequency of the staggered double-grid slow-wave structure. This causes the electron beam, after passing through the slow-wave structure, to cluster, generating an axial electric field within the coupling cavity 31, further interacting with the electron beam. The electron beam, passing through the coupling cavity 31, can effectively interact with the axial electric field within the coupling cavity 31, thereby enhancing the electron clustering effect and significantly improving the efficiency of the beam-wave interaction. This enhanced beam-wave interaction efficiency directly leads to an increase in the output power of the traveling wave tube. The full interaction between the electron beam and the electric field generated in the coupling cavity 31 makes the energy transfer of the electron beam to the microwave signal more efficient, thus increasing the saturated output power of the traveling wave tube. The introduction of coupling cavity 31, through precise adjustment of its size and position, optimizes the dispersion characteristics of the entire slow-wave structure, making the phase velocity of the slow-wave structure closer to the phase velocity of the electron beam, and reducing the impact of frequency offset on output performance. This not only improves output power but also enables the traveling wave tube to maintain high-efficiency output over a wider frequency range. Furthermore, this solution improves output performance by adding coupling cavity 31 while maintaining structural stability, avoiding the increased manufacturing difficulty and cost associated with complex structural designs. Therefore, the interleaved dual-grid slow-wave structure provided in this embodiment can solve the technical problem of low output power in existing interleaved dual-grid slow-wave structures.

[0063] like Figure 6 As shown, when the operating voltage is 23.8kV, the operating current is 50mA, and the frequency is 220GHz, the saturated output power of the interleaved dual-grid slow-wave structure in this scheme can reach 65W, and the gain is 31.1dB.

[0064] like Figure 7 As shown, compared with the existing interleaved dual-grid slow-wave structure, the interleaved dual-grid slow-wave structure of this scheme has a higher output power within a certain frequency range.

[0065] Specifically, the connecting structure 30 includes a first connecting structure 32 and a second connecting structure 33 spaced apart from each other. The first connecting structure 32 is located above the second connecting structure 33, and a connecting electron channel 34 is provided in the gap between the first connecting structure 32 and the second connecting structure 33. One end of the connecting electron channel 34 is connected to the first electron channel 13, and the other end of the connecting electron channel 34 is connected to the second electron channel 23. With this structural arrangement, the connecting electron channel 34 ensures the integrity of the electron beam path, avoids interruption of electron transmission, thereby maintaining the continuity of beam-wave interaction and improving energy conversion efficiency.

[0066] Specifically, a first cavity segment 321 is provided on the first connecting structure 32, and a second cavity segment 331 is provided on the second connecting structure 33 opposite to the first cavity segment 321. The first cavity segment 321, the second cavity segment 331, and the gap between the first cavity segment 321 and the second cavity segment 331 form a coupling cavity 31. This structural arrangement provides additional interaction space between the electron beam and the axial electric field, enhancing the electron beam clustering effect. When the electron beam passes through the coupling cavity 31, it can effectively interact with the axial electric field excited within the cavity, thereby increasing the microwave energy extraction efficiency and improving the output power and gain of the traveling wave tube. Integrating the design of the coupling cavity 31 into the connecting structure 30 not only optimizes the internal spatial layout of the traveling wave tube, making the structure more compact, but also, through the relative positions of the first cavity segment 321 and the second cavity segment 331, achieves effective retention and enhancement of microwave energy within the coupling cavity 31, further improving the beam-wave interaction. This design ensures that the performance indicators of the traveling wave tube are improved without increasing the overall structural complexity.

[0067] Specifically, the coupling cavity 31 is connected to the connecting electronic channel 34. Specifically, the connecting electronic channel 34 includes a first connecting electronic channel and a second connecting electronic channel, with one side of the coupling cavity 31 connected to the first connecting electronic channel and the other side connected to the second connecting electronic channel.

[0068] In this embodiment, the cross-section of the coupling cavity 31 along the first preset direction is rectangular. Compared with other shapes, such as circles or ellipses, the rectangular cross-section design provides better mechanical stability and strength, and is easier to process. Mechanical stability is particularly important in the high-power operating environment of vacuum electronic devices, as it can reduce deformation or resonance of the structure under high-frequency vibration, thereby ensuring the long-term stable operation of the device.

[0069] In this embodiment, the cross-section of the coupling cavity 31 along the second preset direction is rectangular. Compared with other shapes, such as circles or ellipses, the rectangular cross-section design provides better mechanical stability and strength, and is easier to process. Mechanical stability is particularly important in the high-power operating environment of vacuum electronic devices, as it can reduce deformation or resonance of the structure under high-frequency vibration, thereby ensuring the long-term stable operation of the device.

[0070] It should be noted that the first preset direction is the length direction of the interleaved double-grid slow-wave structure. The second preset direction is the height direction of the interleaved double-grid slow-wave structure.

[0071] Specifically, the coupling cavity 31 has a cuboid structure, where a is the length of the coupling cavity 31, b is the height of the coupling cavity 31, and t is the width of the coupling cavity 31; where, μ is the permeability, ε is the permittivity, and f is the center operating frequency of the staggered double-grid slow-wave structure. This structural arrangement ensures that the resonant frequency of the coupling cavity 31 matches the operating frequency of the staggered double-grid slow-wave structure by adjusting its length and height, thus providing optimal coupling conditions between the microwave and the electron beam. The electron beam interacts efficiently with the axial electric field within the coupling cavity 31, enhancing the clustering effect and improving energy conversion efficiency, thereby optimizing the output power and gain of the traveling wave tube.

[0072] It should be noted that the permeability in a vacuum is 4 × 10⁻⁶. -7 H / m. In vacuum, the dielectric constant is 8.854187817 × 10⁻⁶. -7 F / m.

[0073] Specifically, the coupling cavity 31 has a cuboid structure, and t is the width of the coupling cavity 31. The distance between the middle portion of the gate of the first gate body 11 and the middle portion of the gate of the second gate body 12 along the direction from the first slow-wave structure 10 to the second slow-wave structure 20 is D; 0.1 ≤ t / D ≤ 1.5. With this structural arrangement, since the width of the coupling cavity 31 affects its coupling impedance, this value allows the coupling cavity 31 to have a high coupling impedance.

[0074] Specifically, the coupling cavity 31 has a cuboid structure, and 'a' represents the length of the coupling cavity 31. Where 0 < a / A ≤ 5, and A is the length of the staggered double-grid slow-wave structure. This structural arrangement ensures a reasonable distribution of the coupling cavity 31 within the slow-wave structure, avoiding the negative impact of excessively long or short coupling cavities 31 on the overall structure and performance. An appropriate ratio helps to create a smooth transition between the coupling cavity 31 and the slow-wave structure, ensuring the continuity and efficient transmission of the electron beam between different structures.

[0075] Specifically, the coupling cavity 31 has a cuboid structure, and b is the height of the coupling cavity 31. Where 0 < b / B ≤ 5, and B is the height of the staggered double-grid slow-wave structure. This structural arrangement ensures that the vertical dimensions of the coupling cavity 31 match the slow-wave structure, guaranteeing sufficient axial electric field strength to enhance beam-wave interaction while avoiding structural instability or microwave energy loss due to excessive cavity height or height. An appropriate ratio helps optimize the microwave field distribution within the coupling cavity, improving the overall efficiency and stability of the device.

[0076] Specifically, such as Figure 4 As shown, a = 1.28 mm, b = 0.81 mm, t = 0.24 mm. The radius r of the connecting electron channel 34 is 0.1 mm.

[0077] Specifically, such as Figure 5As shown, the lowest oscillation mode of the coupling cavity 31 is TE. 110 The mode has a resonant frequency of 220.75 GHz, which is close to the center operating frequency of the slow wave structure. The electric field direction is a uniform field in the axial direction connecting the electron channel 34. The field strength is strongest at the center, that is, at the connection between the electron channel 34 and the coupling cavity 31, which can effectively interact with the electron beam and make the electron cluster state better.

[0078] In this embodiment, there are multiple coupling cavities 31, spaced apart along the direction from the first slow-wave structure 10 to the second slow-wave structure 20. The distance between the midpoints of two adjacent coupling cavities 31 along the direction from the first slow-wave structure 10 to the second slow-wave structure 20 is d, where d = n × v / f; n is a positive integer, v is the electron velocity within the staggered double-grid slow-wave structure, and f is the center operating frequency of the staggered double-grid slow-wave structure. This structural arrangement ensures that the electron beam achieves optimal aggregation as it passes through each coupling cavity 31, thereby enhancing the efficiency of interaction with the microwave signal. By adjusting the number of coupling cavities 31, it is also possible to accommodate traveling-wave tubes with different electron velocities and operating frequencies, achieving higher efficiency over a wider bandwidth.

[0079] Specifically, the first slow-wave structure 10 is made of a conductive material. The second slow-wave structure 20 is made of a conductive material. The connection structure 30 is made of a conductive material. Specifically, the first slow-wave structure 10 is made of a conductive metal. The second slow-wave structure 20 is made of a conductive metal. The connection structure 30 is made of a conductive metal. This structural arrangement, using conductive materials, effectively reduces internal electrical losses in the traveling wave tube and improves signal transmission efficiency. The use of conductive materials, especially highly conductive metals, also improves heat dissipation performance and enhances the thermal stability of the device, thereby extending the lifespan of the traveling wave tube under high-power operating conditions. Furthermore, the all-metal structure helps improve the mechanical strength of the structure, reduces vibration and deformation under high-frequency operation, and ensures stable operation of the traveling wave tube.

[0080] In this embodiment, the staggered dual-grid slow-wave structure further includes a waveguide input channel 41 and a waveguide output channel 42. The waveguide input channel 41 is disposed on the first slow-wave structure 10 and is connected to the first electronic channel 13. The waveguide output channel 42 is disposed on the second slow-wave structure 20 and is connected to the second electronic channel 23. This structural arrangement ensures that microwave signals can be introduced into the slow-wave structure from the outside with minimal loss. Simultaneously, the amplified signal can be smoothly exported to an external system through the waveguide output channel 42. The use of waveguide channels, especially their direct connection to the electronic channels, reduces reflection and leakage during signal transmission, improves the input-output matching of the traveling wave tube, and thus enhances its operating efficiency and output power.

[0081] Specifically, both waveguide input channel 41 and waveguide output channel 42 adopt the standard rectangular waveguide WR-4.

[0082] Specifically, the interleaved dual-grid slow-wave structure also includes a first microwave output channel 43, which is disposed on the first slow-wave structure 10 and connected to the first electronic channel 13; the first microwave output channel 43 is located on the side of the first slow-wave structure 10 closer to the connecting structure 30. This structural arrangement enables rapid microwave signal output, reduces unnecessary energy loss, and improves the output stability and efficiency of the traveling wave tube.

[0083] Specifically, the interleaved dual-grid slow-wave structure also includes a second microwave output channel 44, which is disposed on the second slow-wave structure 20 and connected to the second electronic channel 23; the second microwave output channel 44 is located on the side of the second slow-wave structure 20 closer to the connecting structure 30. This structural arrangement enables rapid microwave signal output, reduces unnecessary energy loss, and improves the output stability and efficiency of the traveling wave tube.

[0084] Embodiment 2 of the present invention provides a traveling wave tube, which includes the staggered dual-grid slow wave structure provided in Embodiment 1.

[0085] The traveling wave tube (TWT) provided in Embodiment 2 of this invention, by introducing a coupling cavity 31 between the first slow-wave structure 10 and the second slow-wave structure 20, provides an additional interaction space without altering the original staggered double-grid structure design. The resonant frequency of the coupling cavity 31 is designed to be close to the center operating frequency of the staggered double-grid slow-wave structure. This allows the electron beam to effectively interact with the axial electric field within the coupling cavity 31 as it passes through, thereby enhancing the electron clustering effect and significantly improving the efficiency of the beam-wave interaction. This enhanced beam-wave interaction efficiency directly leads to an increase in the TWT's output power. The full interaction between the electron beam and the electric field excited in the coupling cavity 31 makes the energy transfer from the electron beam to the microwave signal more efficient, thus increasing the saturated output power of the TWT. The introduction of the coupling cavity 31, through precise adjustment of its size and position, optimizes the dispersion characteristics of the entire slow-wave structure, making the phase velocity of the slow-wave structure closer to the phase velocity of the electron beam, reducing the impact of frequency offset on output performance. This not only improves the output power but also allows the TWT to maintain high-efficiency output over a wider frequency range. Furthermore, this solution improves output performance by adding a coupling cavity 31 while maintaining structural stability, avoiding the increased manufacturing difficulty and cost associated with complex structural designs. Therefore, the traveling wave tube provided in this embodiment can solve the technical problem of low output power in existing interleaved dual-grid slow-wave structures.

[0086] Specifically, the traveling wave tube is a cut-off traveling wave tube.

[0087] As can be seen from the above description, the above embodiments of the present invention achieve the following technical effects: only a coupling cavity is added to the conventional rectangular staggered double-grid slow wave structure, the original structural parameters only need to be finely adjusted, and the coupling cavity structure is simple and easy to process, which can effectively improve the output power and efficiency of traveling wave tube devices.

[0088] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0089] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of this application. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0090] In the description of this application, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this application; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0091] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0092] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be construed as limiting the scope of protection of this application.

[0093] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An interleaved dual-grid slow-wave structure, characterized in that, include: The first slow wave structure (10) includes a first gate portion (11) and a second gate portion (12) located below and spaced apart from the first gate portion (11). A first electronic channel (13) is provided in the gap between the first gate portion (11) and the second gate portion (12). The gate of the first gate portion (11) and the gate of the second gate portion (12) are misaligned. The second slow-wave structure (20) includes a third gate portion (21) and a fourth gate portion (22) located below and spaced apart from the third gate portion (21). A second electronic channel (23) is provided in the gap between the third gate portion (21) and the fourth gate portion (22). The gate of the third gate portion (21) and the gate of the fourth gate portion (22) are misaligned. A connection structure (30) is provided, one side of which is connected to the first slow wave structure (10) and the other side is connected to the second slow wave structure (20); a coupling cavity (31) is provided on the connection structure (30), and the first electronic channel (13) and the second electronic channel (23) are both connected to the coupling cavity (31); The ratio of the resonant frequency of the coupling cavity (31) to the center operating frequency of the interleaved double-grid slow wave structure is greater than or equal to 0.95 and less than or equal to 1.

05.

2. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, The connection structure (30) includes: A first connecting structure (32) and a second connecting structure (33) are spaced apart from each other. The first connecting structure (32) is located above the second connecting structure (33). A connecting electronic channel (34) is provided in the gap between the first connecting structure (32) and the second connecting structure (33). One end of the connecting electronic channel (34) is connected to the first electronic channel (13), and the other end of the connecting electronic channel (34) is connected to the second electronic channel (23).

3. The interleaved dual-grid slow-wave structure according to claim 2, characterized in that, The first connecting structure (32) is provided with a first cavity segment (321), and the second connecting structure (33) is provided with a second cavity segment (331) disposed opposite to the first cavity segment (321). The first cavity segment (321), the second cavity segment (331), and the gap between the first cavity segment (321) and the second cavity segment (331) form the coupling cavity (31).

4. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, Along a first preset direction, the cross-section of the coupling cavity (31) is rectangular; and / or, Along the second preset direction, the cross-section of the coupling cavity (31) is rectangular.

5. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, The coupling cavity (31) has a cuboid structure, where a is the length of the coupling cavity (31), b is the height of the coupling cavity (31), and t is the width of the coupling cavity (31). in, μ is the permeability, ε is the permittivity, and f is the center operating frequency of the interleaved double-gate slow-wave structure; and / or, Along the direction from the first slow wave structure (10) to the second slow wave structure (20), the distance between the middle part of the gate of the first gate body part (11) and the middle part of the gate of the second gate body part (12) is D; 0.1≤t / D≤1.

5.

6. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, The coupling cavity (31) has a cuboid structure, where a is the length of the coupling cavity (31) and b is the height of the coupling cavity (31). Where 0 < a / A ≤ 5, and A is the length of the interleaved double-grid slow-wave structure; and / or, 0 < b / B ≤ 5, where B is the height of the interleaved double-grid slow-wave structure.

7. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, There are multiple coupling cavities (31), and the multiple coupling cavities (31) are spaced apart along the direction from the first slow wave structure (10) to the second slow wave structure (20); Wherein, along the direction from the first slow wave structure (10) to the second slow wave structure (20), the distance between the middle parts of two adjacent coupling cavities (31) is d, d=n×v / f; n is a positive integer, v is the moving speed of electrons in the staggered double-grid slow wave structure, and f is the center operating frequency of the staggered double-grid slow wave structure.

8. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, The first slow-wave structure (10) is made of a conductive material; and / or, The second slow-wave structure (20) is made of a conductive material; and / or, The connection structure (30) is made of a conductive material.

9. The interleaved dual-grid slow-wave structure according to claim 1, characterized in that, The interleaved dual-grid slow-wave structure also includes: A waveguide input channel (41) and a waveguide output channel (42), wherein the waveguide input channel (41) is disposed on the first slow-wave structure (10) and is connected to the first electronic channel (13); the waveguide output channel (42) is disposed on the second slow-wave structure (20) and is connected to the second electronic channel (23); and / or, A first microwave output channel (43) is disposed on the first slow wave structure (10), and the first microwave output channel (43) is connected to the first electronic channel (13); the first microwave output channel (43) is located in the... The first slow-wave structure (10) is located on the side adjacent to the connecting structure (30); and / or, A second microwave output channel (44) is disposed on the second slow wave structure (20), and the second microwave output channel (44) is connected to the second electronic channel (23); the second microwave output channel (44) is located in the... The second slow wave structure (20) is located on the side near the connecting structure (30).

10. A traveling wave tube, characterized in that, include: The interleaved dual-grid slow-wave structure according to any one of claims 1 to 9.

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