Reaction chamber, surface treatment method and semiconductor equipment

Abstract

This invention belongs to the field of semiconductor processing equipment technology, and discloses a reaction chamber, a surface treatment method, and a semiconductor device. The reaction chamber includes a support plate, a first positioning stage, an adsorption assembly, a second positioning stage, and a driving component. The first positioning stage is insulated and fixedly mounted on the support plate and is used to support a wafer or a blue film wafer. The adsorption assembly includes a plurality of pins that slide through the first positioning stage and the support plate. The second positioning stage is used to support the blue film wafer, and the maximum height of the second positioning stage protruding from the support plate is greater than or equal to the maximum height of the pins protruding from the support plate. The driving component is fixedly mounted on the support plate by a mounting bracket. The driving component can drive the pins to slide along the first positioning stage and the support plate, and can simultaneously drive the support rod to slide along the support plate. This reaction chamber has a simple structure, reducing equipment costs. The semiconductor device of this invention includes the above-described reaction chamber. The surface treatment method of this invention is performed using the above-described reaction chamber.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to a reaction chamber, a surface treatment method and a semiconductor device. Background Art

[0002] In the field of semiconductor processing, wafers will present two forms before and after cutting. Before cutting, they are a whole, and after cutting, they will form several small monomers. In order to keep the original shape of the wafer after cutting, the wafer needs to be attached to a sticky blue film before cutting, so that the several small monomers formed after the wafer cutting can still remain in their original positions. In this process, the wafer presents two states, one is the wafer body before cutting, and the other is the blue film wafer after cutting. Due to the large morphological difference between the wafer body and the blue film wafer, when performing the same process (such as surface activation treatment), two stations or even two devices are required to process the wafer body and the blue film wafer respectively, which greatly increases the complexity of the cavity structure and increases the equipment manufacturing cost.

[0003] Therefore, there is an urgent need for a reaction chamber, a surface treatment method and a semiconductor device to solve the above technical problems. Summary of the invention

[0004] The purpose of the present invention is to provide a reaction chamber and semiconductor equipment, aiming to solve the problem that in the prior art, when the same process is performed on a wafer and a blue film wafer, two workstations or two devices are required to respectively position the wafer and the blue film wafer, resulting in a complex chamber structure or high equipment cost. The reaction chamber and semiconductor equipment can achieve positioning and process of the wafer or the blue film wafer using the same device at the same workstation, effectively simplifying the chamber structure and reducing equipment costs.

[0005] To achieve this object, the present invention adopts the following technical solutions:

[0006] A reaction chamber, comprising:

[0007] A support plate, wherein an upper electrode plate is spaced apart above the support plate;

[0008] A first positioning platform, insulated and fixedly mounted on the support plate, the first positioning platform is used to support a wafer or a blue film wafer, the first positioning platform forms a lower electrode plate opposite to the upper electrode plate, and the first positioning platform is convexly provided with an annular flange for limiting the wafer or for supporting the blue film wafer;

[0009] An adsorption component, comprising a plurality of ejector pins, wherein the ejector pins are slidably disposed on the first positioning platform and the support plate, and the ejector pins are used to adsorb wafers;

[0010] A second positioning platform is slidably arranged on the support plate through a support rod, the second positioning platform is located outside the first positioning platform, the second positioning platform is used to support the blue film wafer, and the maximum height of the second positioning platform protruding from the support plate is greater than or equal to the maximum height of the ejector pin protruding from the support plate;

[0011] A driving member is fixedly mounted on the support plate through a mounting frame, and the driving member can drive the ejector pin to slide along the first positioning platform and the support plate, and can simultaneously drive the support rod to slide along the support plate.

[0012] In some possible embodiments, a movable cavity is sealed at the bottom of the support plate, the reaction chamber further includes a connecting structure located in the movable cavity, the ejector pin and the support rod are connected via the connecting structure, and the driving member drives the connecting structure to slide up and down along the movable cavity.

[0013] In some possible embodiments, the connecting structure includes a support tube, a connecting plate and a floating block, the floating block is sleeved on the support tube, the connecting plate is movably sleeved on the floating block, the support rod is fixedly mounted on the connecting plate, the ejector pin is mounted on the floating block, the support tube is slidably penetrated through the movable cavity, and the driving member drives the support tube to slide up and down along the movable cavity.

[0014] In some possible embodiments, the adsorption assembly further includes an air distributor block, a ventilation pipe and a diaphragm valve, the air distributor block is arranged on the floating connection block, and the ejector pin is connected to the floating connection block through the air distributor block, the ventilation pipe is passed through the support pipe, one end of the ventilation pipe is connected to the air distributor block, and the other end of the ventilation pipe is connected to the diaphragm valve, and a plurality of air passages are arranged in the air distributor block, and the plurality of air passages are connected to a plurality of ejector pins in a one-to-one correspondence.

[0015] In some possible implementations, the surfaces of the upper electrode plate and the lower electrode plate are coated with an anti-pollution layer, and the material of the anti-pollution layer is silicon, or the material of the anti-pollution layer is the same as that of the wafer.

[0016] In some possible implementations, the height of the annular flange is less than 2 mm.

[0017] In some possible implementations, the height of the annular flange is less than 1 mm.

[0018] Another object of the present invention is to provide a surface treatment method, which aims to solve the problem that in the prior art, two workstations or two devices are required to respectively position the wafer and the blue film wafer during surface activation treatment, resulting in a complex cavity structure or high equipment cost. The surface treatment method can achieve positioning and surface activation treatment of the wafer or the blue film wafer using the same device at the same workstation, effectively simplifying the process steps.

[0019] To achieve this object, the present invention adopts the following technical solutions:

[0020] A surface treatment method, using a reaction chamber as described in any of the above schemes, comprises the steps of:

[0021] Providing a blue film wafer;

[0022] placing the blue film wafer on the second positioning stage;

[0023] The driving member drives the supporting rod to descend, so that the blue film wafer is supported on the annular flange, and the blue film wafer and the first positioning platform are surrounded to form a containing space;

[0024] A process gas is introduced into the reaction chamber and radio frequency electricity is introduced into the upper electrode plate to perform surface activation treatment on the blue film wafer.

[0025] In some possible implementations, during the surface activation treatment, cooling gas is introduced into the accommodation space.

[0026] The present invention also provides a semiconductor device, comprising a plurality of the above-mentioned reaction chambers.

[0027] Beneficial effects of the present invention: The reaction chamber provided by the present invention is provided with a first positioning platform, an adsorption assembly, a second positioning platform and a driving member. When positioning a wafer, the driving member drives the ejector pin to protrude above the first positioning platform, and the wafer is placed on the ejector pin. The ejector pin adsorbs the wafer, and the driving member drives the ejector pin to descend, so that the wafer is supported on the first positioning platform and limited in the annular flange. When positioning a blue film wafer, the driving member drives the support rod to rise, and the blue film wafer is placed on the second positioning platform. The driving member drives the support rod to descend, so that the second positioning platform and the annular flange are flush, and the annular flange and the second positioning platform simultaneously play a supporting role for the blue film wafer. When performing the same process, there is no need to use two positioning assemblies to support and position the wafer and the blue film wafer respectively. By using the reaction chamber, both the positioning support of the wafer and the blue film wafer can be achieved, which simplifies the structural complexity of the equipment and reduces the manufacturing cost.

[0028] The reaction chamber surface treatment method provided by the present invention is completed using the above-mentioned reaction chamber, and can be applied to surface activation treatment of wafers and blue film wafers. When treating the surface of the blue film wafer, by introducing process gas into the reaction chamber and introducing radio frequency power to the upper electrode plate, the upper electrode plate excites the process gas to form plasma, and a plasma sheath is generated on the upper surface of the wafer on the blue film. The lower electrode plate can allow particles in a unit volume of the sheath space contacting the wafer to have more and greater energy than the surrounding space, and the energetic particles in the sheath bombard the wafer surface to activate it.

[0029] The semiconductor device provided by the present invention includes the above-mentioned reaction chamber. The semiconductor device can perform process processing on both wafers and blue film wafers without the need for two devices, thereby effectively improving the utilization rate of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a longitudinal cross-sectional view of a blue film wafer provided by an embodiment of the present invention placed in a reaction chamber (the chamber cover is not shown);

[0031] Figure 2 is a structural schematic diagram of a first positioning platform provided in an embodiment of the present invention;

[0032] Figure 3 is a longitudinal cross-sectional view of a reaction chamber (chamber cover not shown) provided in an embodiment of the present invention;

[0033] Figure 4 is a front view of a reaction chamber provided by an embodiment of the present invention;

[0034] Figure 5 is a three-dimensional view of a reaction chamber provided by an embodiment of the present invention;

[0035] Figure 6 4 is a top view of a reaction chamber provided in an embodiment of the present invention.

[0036] In the figure:

[0037] 10. Reaction chamber; 20. Wafer; 30. Blue film wafer; 31. Blue film patch; 40. Lower chamber wall ring; 50. Second sealing ring; 60. Third sealing ring; 70. Vacuuming pipeline;

[0038] 100, support plate; 200, first positioning platform; 210, annular flange; 220, cooling channel; 310, ejector pin; 311, suction cup; 320, air distributor block; 330, vent pipe; 340, diaphragm valve; 410, long strip support block; 420, directional block; 500, support rod; 600, drive member; 700, mounting frame; 800, movable cavity; 910, support tube; 920, connecting plate; 930, floating connecting block; 1000, limiting groove; 1100, ejector block; 1200, insulating block; 1300, linear bearing; 1400, first sealing ring. DETAILED DESCRIPTION

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0040] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0042] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0043] The present embodiment provides a reaction chamber and a semiconductor device, aiming to solve the problem that in the prior art, when the same process is performed on a wafer and a blue film wafer, two workstations or two devices are required to respectively position the wafer and the blue film wafer, resulting in a complex chamber structure or high equipment cost. The reaction chamber and the semiconductor device can achieve positioning and process of the wafer or the blue film wafer using the same device at the same workstation, effectively simplifying the chamber structure and reducing equipment cost.

[0044] like Figures 1 to 6 As shown, the reaction chamber 10 includes a support plate 100, a first positioning platform 200, an adsorption assembly, a second positioning platform and a driving member 600. An upper electrode plate is arranged above the support plate 100, and the first positioning platform 200 is insulated and fixedly installed on the support plate 100. The first positioning platform 200 is used to support the wafer 20 or the blue film wafer 30. The first positioning platform 200 forms a lower electrode plate opposite to the upper electrode plate. The first positioning platform 200 is convexly provided with an annular flange 210 for limiting the wafer 20 or for supporting the blue film wafer 30. Optionally, the first positioning platform 200 is connected to the support plate 100 through an insulating block 1200. The adsorption assembly includes a plurality of ejector pins 310, which are slidably arranged on the first positioning platform 200 and the support plate 100, and the ejector pins 310 are used to adsorb the wafer 20. The second positioning platform is slidably penetrated through the support plate 100 through the support rod 500, and the second positioning platform is located outside the first positioning platform 200. The second positioning platform is used to support the blue film wafer 30, and the maximum height of the second positioning platform protruding from the support plate 100 is greater than or equal to the maximum height of the ejector pin 310 protruding from the support plate 100. In this embodiment, the support plate 100 is set as a ring structure, the first positioning platform 200 is overlapped on the support plate 100, and the ejector pin 310 is slidably penetrated through the first positioning platform 200, that is, the maximum height of the second positioning platform protruding from the upper surface of the support plate 100 is greater than or equal to the maximum height of the ejector pin 310 protruding from the upper surface of the support plate 100. The driving member 600 is fixedly installed on the support plate 100 through the mounting frame 700, and the driving member 600 can drive the ejector pin 310 to slide along the first positioning platform 200 and the support plate 100, and can simultaneously drive the support rod 500 to slide along the support plate 100. Optionally, the driving member 600 uses a cylinder. In other embodiments, the driving member 600 can be set as other driving structures such as an electric push rod, which can be set as needed. It should be noted that the wafer 20 of this embodiment is a whole wafer, and the blue film wafer 30 refers to the whole wafer attached to a sticky film. After the wafer is cut, the blue film maintains tension through a rigid blue film ring.

[0045] The reaction chamber 10 is provided with a first positioning platform 200, an adsorption assembly, a second positioning platform and a driving member 600. When positioning the wafer 20, the driving member 600 drives the ejector pin 310 to protrude above the first positioning platform 200, and the wafer 20 is placed on the ejector pin 310. The ejector pin 310 adsorbs the wafer 20, and the driving member 600 drives the ejector pin 310 to descend, so that the wafer 20 is supported on the first positioning platform 200 and limited in the annular flange 210. After the process of the wafer 20 is completed, the driving member 600 drives the ejector pin 310 to rise. After the wafer 20 is lifted up, the wafer 20 can be transferred from the back side of the wafer 20 manually or by a robot. Avoid damage to the front of the wafer 20; when positioning the blue film wafer 30, the driving member 600 drives the support rod 500 to rise, and the blue film wafer 30 is placed on the second positioning platform. The driving member 600 drives the support rod 500 to descend, so that the second positioning platform and the annular flange 210 are flush, and the annular flange 210 and the second positioning platform can simultaneously play a supporting role for the blue film wafer 30. After the process of the blue film wafer 30 is completed, the driving member 600 drives the second positioning platform to rise. After the blue film wafer 30 is lifted up, the blue film wafer 30 can also be transferred from the back of the blue film wafer 30 by manual or mechanical hands to avoid damage to the front of the blue film wafer 30. When performing the same process, there is no need to use two positioning components to support and position the wafer 20 and the blue film wafer 30 respectively. By using the reaction chamber 10, both the positioning support of the wafer 20 and the positioning support of the blue film wafer 30 can be achieved, which simplifies the structural complexity of the equipment and reduces the manufacturing cost.

[0046] Optionally, the height of the annular flange 210 is less than 2 mm. Preferably, the height of the annular flange 210 is less than 1 mm. When the gap between the blue film of the blue film wafer 30 and the lower electrode plate is too small, process gas is introduced into the reaction chamber 10 and radio frequency power is introduced to the upper electrode plate, and no plasma is generated between the blue film and the lower electrode plate, and no energetic particles bombard the blue film; and the blue film is directly attached to the lower electrode plate, and the chemical decomposition products of the blue film after heating will adhere to the surface of the lower electrode plate, forming pollution. In the subsequent plasma formation process, the pollutant will cover the reaction chamber 10 and fall on the bonding surface, affecting the bonding and causing holes to appear on the bonding surface. When the gap between the blue film of the blue film wafer 30 and the lower electrode plate is too large, the plasma excited by the lower electrode plate will directly bombard the back side of the blue film (the side without the wafer 20 attached). This bombardment will change the state of the blue film. On the one hand, it will cause decomposition product pollution. On the other hand, the deformation of the blue film will cause the chip attached thereto to be damaged due to extrusion. Because the wafer 20 attached to the blue film is a number of small chips after cutting, the gaps between these chips are very small. Once the state of the blue film changes, the stress generated will cause the chips to squeeze each other.

[0047] Optionally, the surfaces of the upper electrode plate and the lower electrode plate are coated with an anti-pollution layer, and the material of the anti-pollution layer is the same as that of the wafer 20. By providing the anti-pollution layer, it is possible to effectively prevent energy particles from bombarding the surfaces of the upper electrode plate and the lower electrode plate during the surface activation treatment. In this embodiment, the anti-pollution layer is preferably set to a silicon layer.

[0048] Preferably, the bottom of the support plate 100 is sealed with an active cavity 800, and the reaction chamber 10 also includes a connection structure located in the active cavity 800, the ejector pin 310 and the support rod 500 are connected by the connection structure, and the driving member 600 drives the connection structure to slide up and down along the active cavity 800. The connection structure is arranged in the active cavity 800, and the active cavity 800 can protect the connection structure from damage by the external environment; the ejector pin 310 and the support rod 500 are connected by the connection structure, and the driving member 600 can directly drive the connection structure to slide up and down along the active cavity 800, and the connection structure can drive the ejector pin 310 and the support rod 500 to move, ensuring the synchronization of the movement of the ejector pin 310 and the support rod 500. Exemplarily, the support plate 100 and the active cavity 800 are sealed and connected by a first sealing ring 1400.

[0049] Optionally, the connection structure includes a support tube 910, a connection plate 920 and a floating connection block 930, the floating connection block 930 is sleeved on the support tube 910, the connection plate 920 is movably sleeved on the floating connection block 930, the support rod 500 is fixedly installed on the connection plate 920, the ejector pin 310 is installed on the floating connection block 930, the support tube 910 is slidably penetrated in the movable cavity 800, and the driving member 600 drives the support tube 910 to slide up and down along the movable cavity 800. The connection plate 920 of this embodiment is movably sleeved on the floating connection block 930, and the connection plate 920 can produce a certain displacement relative to the floating connection block 930 to eliminate the over-positioning caused by the simultaneous movement of the ejector pin 310 and the support rod 500. Optionally, the support rod 500 is connected to the connection plate 920 through a linear bearing 1300, and the linear bearing 1300 enables the support rod 500 to move smoothly with high precision.

[0050] In this embodiment, the adsorption assembly also includes a gas distributor block 320, a vent pipe 330 and a diaphragm valve 340. The gas distributor block 320 is arranged on the floating connection block 930, and the ejector pin 310 is connected to the floating connection block 930 through the gas distributor block 320. The vent pipe 330 is inserted into the support tube 910, one end of the vent pipe 330 is connected to the gas distributor block 320, and the other end of the vent pipe 330 is connected to the diaphragm valve 340. A plurality of air passages are arranged in the gas distributor block 320, and the plurality of air passages are connected to a plurality of ejector pins 310 in a one-to-one correspondence. The gas distributor block 320 is arranged on the floating connection block 930, and the connecting plate 920 is movably mounted on the floating connection block 930. The connecting plate 920 and the gas distributor block 320 can be mutually displaced to eliminate over-positioning caused by the fit. It is easy to understand that the vent pipe 330 is connected to the diaphragm valve 340 through a pipeline, and the pipeline is passed through the support tube 910, so that the diaphragm valve 340 is exposed on the support tube 910. When in use, the diaphragm valve 340 is opened, and negative pressure is filled into the vent pipe 330. The negative pressure enters into a plurality of ejector pins 310 one by one through a plurality of air channels of the gas distributor block 320, and a negative pressure air chamber is formed in the air channel and the ejector pin 310, so that the suction cup 311 of the ejector pin 310 adsorbs the wafer 20. Optionally, three ejector pins 310 are provided, and the three ejector pins 310 are evenly distributed along the circumference of the first positioning table 200. Accordingly, three air channels are provided in the gas distributor block 320. In other embodiments, the number of ejector pins 310 can be set to other values, such as four or five, etc., which can be set as needed.

[0051] Preferably, the gas distributor 320 and the floating connector 930 are enclosed to form a limiting groove 1000, and the connecting plate 920 is movable and limited in the limiting groove 1000. The limiting groove 1000 can effectively limit the movement range of the connecting plate 920 to prevent it from being greatly offset and affecting the movement stability of the ejector 310 and the support rod 500.

[0052] In order to improve the movement reliability of the support tube 910, the mounting frame 700 is arranged at the bottom of the movable cavity 800, and the output end of the driving member 600 is provided with a top block 1100 which is slidably connected to the side wall of the mounting frame 700, and the support tube 910 is fixedly mounted on the top block 1100. The top block 1100 and the mounting frame 700 are slidably connected, which can smoothly transmit the power of the driving member 600 to the support tube 910, thereby improving the reliability of the support tube 910. Preferably, two driving members 600 are provided, and the two driving members 600 are arranged side by side, and the output ends of the two driving members 600 are connected to the top block 1100. In other embodiments, the number of the driving members 600 can be set to other, such as three, etc., which can be set as needed.

[0053] In this embodiment, the second positioning platform includes a long strip support block 410 and an orientation block 420. The two long strip support blocks 410 are symmetrically arranged on both sides of the first positioning platform 200, and the orientation block 420 is arranged on one side of the two long strip support blocks 410. The long strip support block 410 matches the shape of the blue film patch 31 of the blue film wafer 30 (referring to the support body supporting the blue film wafer 30) to facilitate its positioning and support. The long strip support block 410 can be set as a step-type structure, and the blue film wafer 30 is supported on the step surface of the step-type structure; the orientation block 420 is set on one side of the two long strip support blocks 410, which limits the direction in which the blue film wafer 30 enters the second positioning platform. The orientation block 420 can be set as a channel steel structure, and the blue film patch 31 of the blue film wafer 30 extends into the groove of the channel steel structure.

[0054] The reaction chamber 10 also includes a lower chamber wall ring 40 and a chamber cover. The chamber cover sealing cover is arranged on the lower chamber wall ring 40. In the reaction chamber 10, both the wafer 20 and the blue film wafer 30 can be processed. There is no need to set up two workstations in the same chamber, and the structure is simple.

[0055] Optionally, the lower chamber wall ring 40 and the support plate 100 of the reaction chamber 10 are sealed and connected via a second sealing ring 50 , and the chamber upper cover and the lower chamber wall ring 40 are sealed and connected via a third sealing ring 60 .

[0056] The reaction chamber 10 further includes a vacuum pumping line 70 , which can be disposed at the bottom of the active cavity 800 to save space.

[0057] A semiconductor device provided in this embodiment includes a plurality of the above-mentioned reaction chambers 10. The semiconductor device can perform process processing on both the wafer 20 and the blue film wafer 30 without the need for two devices, thereby effectively improving the utilization rate of the semiconductor device.

[0058] This embodiment also provides a surface treatment method, which aims to solve the problem that in the prior art, two workstations or two devices are required to respectively position the wafer and the blue film wafer when performing surface activation treatment on the wafer and the blue film wafer, resulting in a complex cavity structure or high equipment cost. This surface treatment method can achieve the use of the same device at the same workstation to position the wafer or the blue film wafer and perform surface activation treatment, effectively simplifying the process steps.

[0059] The surface treatment method is performed using the above-mentioned reaction chamber 10, and comprises the following steps:

[0060] S1, providing a blue film wafer 30;

[0061] S2, placing the blue film wafer 30 on the second positioning table;

[0062] S3, the driving member 600 drives the supporting rod 500 to descend, so that the blue film wafer 30 is supported on the annular flange 210, and the blue film wafer 30 and the first positioning platform 200 are surrounded to form a containing space;

[0063] S4 , introducing process gas into the reaction chamber 10 and introducing radio frequency electricity to the upper electrode plate to perform surface activation treatment on the blue film wafer 30 .

[0064] The above-mentioned surface treatment method can be applied to surface activation treatment of wafer 20 and blue film wafer 30. When treating the surface of blue film wafer 30, process gas is introduced into reaction chamber 10 and radio frequency power is introduced to the upper electrode plate. The upper electrode plate excites the process gas to form plasma, and a plasma sheath is generated on the upper surface of wafer 20 on the blue film. The lower electrode plate can make the particles in the unit volume of the sheath space contacting wafer 20 have more and greater energy than the surrounding space. The energetic particles in the sheath bombard the surface of wafer 20 to activate it.

[0065] Preferably, during the surface activation treatment, cooling gas is introduced into the accommodation space. When the blue film contacts the lower electrode plate, the blue film may undergo thermal expansion or contraction under the influence of the heat generated by the plasma bombardment. If the thermal expansion coefficient of the blue film does not match the wafer 20, stress will be generated inside the wafer 20. This stress may cause cracks or warping in the wafer 20. During the surface activation treatment, the introduction of cooling gas into the accommodation space can avoid the above problems. Exemplarily, cooling gas can be externally connected through the gas distribution block 320, and the cooling gas is supplied to the accommodation space through the ejector pin 310 and the suction cup 311. The accommodation space can be used to accommodate cooling gas to cool the blue film. Optionally, the table top of the first positioning table 200 can be provided with a plurality of evenly distributed cooling channels 220, and the cooling channels 220 are connected to the suction cup 311.

[0066] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A reaction chamber, characterized in that: include: A support plate (100), wherein an upper electrode plate is spaced apart above the support plate (100); A first positioning platform (200) is insulated and fixedly mounted on the support plate (100); the first positioning platform (200) is used to support a wafer (20) or a blue film wafer (30); the first positioning platform (200) forms a lower electrode plate opposite to the upper electrode plate; the first positioning platform (200) is convexly provided with an annular flange (210) for limiting the position of the wafer (20) or for supporting the blue film wafer (30); An adsorption component comprises a plurality of ejector pins (310), wherein the ejector pins (310) are slidably disposed on the first positioning platform (200) and the support plate (100), and the ejector pins (310) are used to adsorb the wafer (20); A second positioning platform is slidably disposed on the support plate (100) via a support rod (500), the second positioning platform is located outside the first positioning platform (200), the second positioning platform is used to support the blue film wafer (30), and the maximum height of the second positioning platform protruding from the support plate (100) is greater than or equal to the maximum height of the ejector pin (310) protruding from the support plate (100); The driving member (600) is fixedly mounted on the support plate (100) via a mounting frame (700); the driving member (600) can drive the ejector pin (310) to slide along the first positioning platform (200) and the support plate (100), and can simultaneously drive the support rod (500) to slide along the support plate (100).

2. The reaction chamber according to claim 1, characterized in that: The bottom of the support plate (100) is sealed with an active cavity (800), the reaction chamber further comprises a connecting structure located in the active cavity (800), the ejector pin (310) and the support rod (500) are connected via the connecting structure, and the driving member (600) drives the connecting structure to slide up and down along the active cavity (800).

3. The reaction chamber according to claim 2, characterized in that: The connection structure comprises a support tube (910), a connection plate (920) and a floating connection block (930); the floating connection block (930) is sleeved on the support tube (910); the connection plate (920) is movably sleeved on the floating connection block (930); the support rod (500) is fixedly mounted on the connection plate (920); the ejector pin (310) is mounted on the floating connection block (930); the support tube (910) is slidably penetrated in the movable cavity (800); and the driving member (600) drives the support tube (910) to slide up and down along the movable cavity (800).

4. The reaction chamber according to claim 3, characterized in that: The adsorption component also includes an air distribution block (320), a ventilation pipe (330) and a diaphragm valve (340). The air distribution block (320) is arranged on the floating connection block (930), and the ejector pin (310) is connected to the floating connection block (930) through the air distribution block (320). The ventilation pipe (330) is passed through the support pipe (910), one end of the ventilation pipe (330) is connected to the air distribution block (320), and the other end of the ventilation pipe (330) is connected to the diaphragm valve (340). A plurality of air passages are arranged in the air distribution block (320), and the plurality of air passages are connected to a plurality of ejector pins (310) in a one-to-one correspondence.

5. The reaction chamber according to claim 1, characterized in that: The surfaces of the upper electrode plate and the lower electrode plate are both plated with an anti-pollution layer, and the material of the anti-pollution layer is silicon, or the material of the anti-pollution layer is the same as that of the wafer (20).

6. The reaction chamber according to claim 1, characterized in that: The height of the annular flange (210) is less than 2 mm.

7. The reaction chamber according to claim 6, characterized in that: The height of the annular flange (210) is less than 1 mm.

8. A surface treatment method, characterized in that: The method is performed using a reaction chamber as described in any one of claims 1 to 7, comprising the steps of: Providing a blue film wafer (30); Placing the blue film wafer (30) on the second positioning platform; The driving member (600) drives the supporting rod (500) to descend, so that the blue film wafer (30) is supported on the annular flange (210), and the blue film wafer (30) and the first positioning platform (200) are surrounded to form a containing space; Process gas is introduced into the reaction chamber and radio frequency electricity is introduced into the upper electrode plate to perform surface activation treatment on the blue film wafer (30).

9. The surface treatment method according to claim 8, characterized in that: During the surface activation treatment, cooling gas is introduced into the accommodation space.

10. A semiconductor device, characterized in that The invention comprises a plurality of reaction chambers according to any one of claims 1 to 7.

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