Half-bridge switch assembly

Abstract

The invention relates to a half-bridge switching arrangement having a plurality of half-bridges connected in parallel, each half-bridge having a first semiconductor switching element and a second semiconductor switching element, comprising: a plurality of half-bridge units (100), wherein each half-bridge unit has a respective one of the first semiconductor switching elements (110), a respective one of the second semiconductor switching elements (120) and a carrier element, the respective first semiconductor switching element (110) and the respective second semiconductor switching element (120) being arranged on the respective carrier element; a cooling body (180), wherein the plurality of half-bridge units (100) are in thermal contact with the cooling body (180); a first bus bar to which the first connections of the individual first semiconductor switching elements (110) of the plurality of half-bridge units (100) are electrically connected, respectively; a second bus bar to which a second connection of a single first semiconductor switching element (110) of the plurality of half-bridge units (100) and a first connection of a single second semiconductor switching element (120) of the plurality of half-bridge units (100) are electrically connected, respectively; and a third bus, to which the second connections of the individual second semiconductor switching elements (20) of the plurality of half-bridge units (100) are each electrically connected.

Description

Technical Field

[0001] The invention relates to a half-bridge switch component. Background Art

[0002] Half-bridge switching components can actually be used in converters, for example as inverters or converters for converting between DC voltage and AC voltage. In fact, such half-bridge switching components can be used in power modules in (motor) vehicles to convert the voltage between the DC voltage vehicle power supply and the motor that can be operated with multi-phase AC voltage.

[0003] This half-bridge switch assembly has a half-bridge for each phase, and the half-bridges have a high-side switch and a low-side switch. A single discrete semiconductor switch element can be used as a high-side switch or a low-side switch, such as a single transistor such as a FET, a MOSFET, an IGBT, etc. In addition, each phase can also be connected in parallel with a plurality of half-bridges, each of which has a first discrete semiconductor switch element and a second discrete semiconductor switch element in parallel, wherein the first semiconductor switch elements of the half-bridges connected in parallel form a high-side switch, and the second semiconductor switch elements of the half-bridges connected in parallel form a low-side switch.

[0004] This parallel connection of half-bridges allows high scalability of power and high power or current intensity. However, this usually results in a high DC bus inductance and thus a high total inductance of the commutation loop. And at high currents and high switching frequencies, it is usually difficult to sufficiently cool the half-bridge switching components so that the temperature is maintained at the required value.

[0005] Therefore, there is a need to provide an improved half-bridge switch assembly having a parallel circuit of a single half-bridge. Summary of the invention

[0006] Against this background, a half-bridge switching assembly is proposed having the features of claim 1. Advantageous embodiments are subject matter of the dependent claims and of the description below.

[0007] The half-bridge switch assembly has a plurality of half-bridges connected in parallel, wherein each half-bridge has a first semiconductor switch element and a second semiconductor switch element, respectively. Therefore, the half-bridge switch assembly has a plurality of first semiconductor switch elements and a plurality of second semiconductor switch elements, wherein the number of the respective first semiconductor switch elements and the number of the respective second semiconductor switch elements correspond to the number of half-bridges. The first semiconductor switch elements of the respective half-bridges connected in parallel form a high-side switch, and the second semiconductor switch elements of the half-bridges connected in parallel form a low-side switch. In practice, the individual semiconductor switch elements can be respectively constructed as transistors, for example, FETs, MOSFETs, IGBTs, etc.

[0008] The half-bridge switch assembly has a plurality of half-bridge units or half-bridge modules, wherein each half-bridge unit has one of the first semiconductor switching elements, one of the second semiconductor switching elements and a carrier element. Each first semiconductor switching element and each second semiconductor switching element are arranged on each carrier element. Therefore, in particular, a half-bridge unit is provided for each of the half-bridges connected in parallel. A plurality of first semiconductor switching elements and second semiconductor switching elements of the half-bridge are respectively mounted in pairs on one of the half-bridge units. In practice, the carrier element can be constructed in a sheet-like or planar manner, and the two semiconductor switching elements can be arranged on the same side of the sheet-like carrier element.

[0009] Furthermore, the half-bridge switch assembly has a cooling body, which can be cooled by a fluid, for example, the cooling body can have an inlet and an outlet for a corresponding cooling fluid. The cooling fluid can include oil, water, air, etc. The plurality of half-bridge units are in thermal contact with the cooling body, in particular with a first side of the cooling body. In practice, the carrier elements can be arranged on the cooling body on the side of the cooling body facing away from the semiconductor switching elements.

[0010] In addition, the half-bridge switch assembly has a first busbar, in particular a positive busbar ("B+ busbar"), a second busbar, in particular an output phase busbar, and a third busbar, in particular a negative busbar ("B- busbar"). The first connections (in particular the drain connections) of the individual first semiconductor switch elements of the plurality of half-bridge units are electrically connected to the first busbar or the positive busbar. The second connections (in particular the source connections) of the individual first semiconductor switch elements of the plurality of half-bridge units and the first connections (in particular the drain connections) of the individual second semiconductor switch elements of the plurality of half-bridge units are electrically connected to the second busbar or the output phase busbar. One second connection, in particular one source connection, of the individual second semiconductor switch elements of the plurality of half-bridge units is electrically connected to the third or negative busbar. The individual busbars can be arranged or mounted on or relative to the cooling body, in particular so that the main extension planes of the individual busbars are parallel to or perpendicular to the direction of the main extension plane of the cooling body, respectively.

[0011] Each half-bridge unit exists as a separate device before being assembled or arranged in the half-bridge switch assembly or is structurally separated before assembly. Therefore, the half-bridge unit can be prefabricated, and then, only needs to be assembled with other components to form a half-bridge switch assembly. This greatly simplifies the production process. Therefore, the corresponding switch unit is a modular component, which can be combined with each other in a simple, flexible and scalable manner in structure to manufacture, for example, a half-bridge circuit for an inverter phase. The corresponding cooling body is provided and arranged not only for mechanical fixation but also for cooling a single half-bridge unit, thereby cooling a single semiconductor switch element. In fact, each carrier element of a single half-bridge unit can be made of a material with good thermal conductivity or a material with low thermal resistance (for example, made of copper) so that the heat generated by each semiconductor switch element mounted on the carrier element can be well conducted and the heat can be effectively conducted to the cooling body.

[0012] The present invention provides a half-bridge switch component, which has a small or as small as possible DC bus inductance, a small or as small as possible commutation loop inductance, and a small or as small as possible thermal impedance, and the half-bridge switch component can be effectively cooled.

[0013] By connecting the half bridges in parallel with the discrete switching elements, in particular, a high scalability of power can be achieved. The number of semiconductor switching elements or half bridges can be selected accordingly in a manner to achieve the required power or the required current. In addition, by using discrete switching elements, the overall cost of the circuit can be kept low.

[0014] Conventionally, the use of parallel, discrete semiconductor switching elements often results in high parasitic inductances, which can be critical at high switching speeds of wide-bandgap semiconductor elements (WBG), such as SiC or GaN. Such parasitic inductances can be minimized or at least reduced in the switch assembly according to the invention.

[0015] The busbars are advantageously arranged close to one another, whereby the inductive resistance can be reduced or kept as small as possible. In particular, a low DC busbar inductance and a low total inductance of the commutation circuit can thus be achieved. Due to the short distances between the lines or connections of the switching elements and the busbars, the commutation circuit can be optimized. In practice, the busbars can be laminated busbars with very low inductance, which enables the half-bridge to be switched at very high speeds.

[0016] By arranging the cooling body, the busbar can be effectively cooled. In addition, low thermal impedance can be achieved by arranging the semiconductor switching element on the cooling body, and the heat released by the switching element can be effectively transported to the cooling body. In particular, the junction temperature of the switching element can be maintained at a desired value at high current and high switching frequency.

[0017] According to one embodiment, the half-bridge switch assembly also has at least one adhesive layer, which is arranged between the cooling body and the individual half-bridge units. In fact, each half-bridge unit can be provided with its own adhesive layer, or a common adhesive layer can be provided for multiple or all of the half-bridge units. With the help of this (these) adhesive layer, the individual half-bridge unit can be firmly connected or bonded to the cooling body. Alternatively or additionally, according to one embodiment, the half-bridge switch assembly has at least one clamping element, which presses each of the half-bridge units against the cooling body. In fact, the individual half-bridge units can be provided with their own clamping elements, wherein the clamping elements actually apply pressure to the two semiconductor switch elements of each half-bridge unit. In addition, a common clamping element can also be provided for multiple or all half-bridge units. With the help of these clamping elements, the individual half-bridge units can be connected to the cooling body in a forced locking manner, especially in a way that can be easily removed again. According to one embodiment, each carrier element of each half-bridge unit is made of a ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4). In fact, compared with materials such as plastic, such carrier elements made of ceramic materials are more durable and have a longer service life when exposed to alternating electric fields. The carrier elements may be loaded by high switching frequencies and high edge steepness, especially when using fast-switching semiconductors. The material of the respective carrier element is a thermal interface material (English: "thermal interface material", TIM) between the semiconductor switching elements and the cooling body, and can have a thermal resistance as low as possible or a thermal conductivity as high as possible. As a result, the thermal resistance between the switching element, the carrier element and the cooling body can be reduced, and the heat can be efficiently dissipated from the switching element to the cooling body. In fact, a layer composed of a good thermal conductive material (for example a copper layer) can be placed on the back side of each carrier element facing away from the semiconductor switching elements in order to further improve heat conduction and heat propagation.

[0018] According to one embodiment, the first section of the upper side of the respective carrier element of each half-bridge unit is metallized, and the respective first semiconductor switching element and the respective second semiconductor switching element are arranged on the first section. According to one embodiment, the second section of the upper side of the respective carrier element of each half-bridge unit is not metallized, and the respective first semiconductor switching element and the respective second semiconductor switching element are not arranged on the second section. The first section made of such a metallized ceramic can facilitate the soldering of the leadframe of the semiconductor switching element.

[0019] According to one embodiment, the half-bridge switch assembly has at least one capacitor unit, which in turn has at least one discrete capacitor element, in particular a plurality of discrete capacitor elements connected in parallel. At least one capacitor unit is arranged on the (second) side of the cooling body that is away from the plurality of half-bridge units. These capacitor units or their capacitor elements are in particular intermediate circuit capacitors. For example, the capacitor unit can provide a primary intermediate circuit capacitor and / or a secondary or distributed intermediate circuit capacitor, the primary intermediate circuit capacitor being connected in parallel with the entire parallel circuit of the half-bridge, and the secondary or distributed intermediate circuit capacitor being connected in parallel and distributed with a single half-bridge. By combining the primary and secondary intermediate circuit capacitors, the inductance of the commutation circuit can be particularly reduced. The use of discrete capacitor elements in the capacitor unit increases the flexibility and scalability of the design of the primary and / or secondary intermediate circuits in order to achieve the required power, voltage and current ripple.

[0020] By the design and shape of the half-bridge switch assembly, sufficient space can be provided for the intermediate circuit capacitor, thereby reducing the inductance of the commutation circuit. By placing the intermediate circuit capacitor as close to the switching element as possible, the inductance can be reduced in particular. Due to the short distance between the line, busbar and capacitor unit of the switching element, the commutation circuit can be optimized. The placement of the capacitor unit and its connection on the cooling body are easy to achieve during the manufacturing process. In particular, the distance between the intermediate circuit capacitor and the switching element can be as symmetrical as possible. The capacitor unit can be effectively cooled by the cooling body. For example, the capacitor unit can be constructed as a square, and in fact can be a special square capacitor element or a plurality of discrete capacitor elements arranged in a square housing. The size of the DC intermediate circuit can depend on multiple factors, for example, on the output current or output power of the inverter, the change of the modulation index, the required voltage ripple and the ripple current load capacity of a single capacitor. The number and size of the single capacitor unit and its capacitor elements can be flexibly changed according to the application. The half-bridge switch assembly provides flexibility for expanding the intermediate circuit at different powers. The number of parallel capacitors can be different from the number of parallel half bridges. The arrangement of the capacitor is very close to the half bridge, thereby reducing the inductance of the commutation circuit. The capacitor can be cooled by a cooling body, and in fact, can also be cooled by thermal contact between the surface material or filler and the housing of the inverter, thereby further improving the cooling effect of the intermediate circuit.

[0021] According to one embodiment, the half-bridge switch assembly also has a circuit board, wherein at least one groove is provided in the circuit board or in a single layer or multiple layers of the circuit board for uniformly distributing the current through the circuit board and through the single first semiconductor switch element and the single second semiconductor switch element. The circuit board can be a power circuit board or a power board for supplying power to the semiconductor switch element in particular. For achieving uniform distribution of current, the first impedances between the single half-bridges connected in parallel in the first busbar or the positive busbar should be respectively the same or at least substantially the same. In addition, the second impedances between the single half-bridges connected in parallel in the second busbar or the output phase busbar should be respectively the same or at least substantially the same. In addition, the third impedances between the single half-bridges connected in parallel in the third busbar or the negative busbar should be respectively the same or at least substantially the same. In addition, in particular, the single first impedance, the second impedance and the third impedance should be substantially the same or at least substantially the same. For example, the shapes, sizes and positions of the single grooves in the circuit board or in a single layer of the circuit board can be determined by means of an optimization algorithm so that the single first impedance, the second impedance and the third impedance are as identical as possible.

[0022] According to an embodiment of the present invention, the first busbar, the second busbar and the third busbar are respectively configured as separate components of a common circuit board, in particular, they are respectively configured as a single layer or multiple layers of a circuit board, for example, they can be configured as a thick copper circuit board. In fact, the common circuit board can be configured as the (power) circuit board with grooves described above. In addition, the common circuit board can also be configured instead of or in addition to the (power) circuit board with grooves. In particular, the individual busbars can be configured in a sheet-like or planar manner and arranged parallel to each other in the common circuit board. The common circuit board is arranged on the cooling body or relative to the cooling body in such a way that the main extension plane of the common circuit board is respectively perpendicular or at least substantially perpendicular to the direction of each main extension plane of the individual half-bridge units. In particular, the common circuit board is arranged on the third side of the cooling body, and the third side is perpendicular or at least substantially perpendicular to its first side, in particular, the first side is arranged with a half-bridge unit. The corresponding common circuit board can be cooled by the cooling body. Therefore, the busbars are arranged close to each other, thereby reducing the inductive resistance or keeping the inductive resistance as low as possible. In particular, a low intermediate circuit inductance and a low total inductance of the commutation circuit can thereby be achieved. Due to the short distance between the connections of the switching elements and the busbars, the commutation circuit can be optimized.

[0023] In addition, the common circuit board can be used as a component, especially as a control board or a power board, wherein at least one third connection of a single semiconductor switching element can be electrically connected to the board respectively. In fact, each semiconductor switching element can have a gate connection and a Kelvin connection (also called a Kelvin source connection or an auxiliary source connection) as at least one third connection. Such a Kelvin source connection can decouple the path of the load current from the path of the control current, thereby improving the switching performance. The individual connections of the semiconductor switching elements can be respectively constructed, especially as pins or pins, which are led out of each semiconductor switching element, especially parallel to its main extension plane. In fact, the individual connections can be respectively assembled by through-hole assembly or plug assembly (English: "through-hole technology", THT or "pin-in-hole technology", PIH). For this purpose, the corresponding connecting pins are appropriately passed through the corresponding connection openings (especially the connection openings in the form of holes or drilled holes) through the corresponding busbars or circuit boards, and are bonded and firmly connected to the corresponding busbars or circuit boards on the (back) side facing away from the busbars, especially connected by soldering or sintering. Similarly, the individual connections of the capacitor unit can also be electrically connected to the busbars in the common circuit board. Furthermore, the common printed circuit board may also have other components, such as electrical connections for supplying power to the individual busbars.

[0024] According to an embodiment, the half-bridge switch assembly further comprises an electrical cooling body insulation layer, which is arranged between the cooling body and the common circuit board, and the cooling body and the common circuit board are electrically insulated from each other by the electrical cooling body insulation layer. The cooling body insulation layer can be made of a material with good thermal conductivity or a material with low thermal resistance, so that heat can be effectively conducted from the circuit board to the cooling body.

[0025] According to an embodiment of the present invention, the first busbar, the second busbar and the third busbar are respectively constructed in a sheet-like manner and arranged relative to the cooling body, so that the main extension planes of the first busbar, the second busbar and the third busbar are respectively parallel to or at least substantially parallel to the direction of the main extension planes of the individual half-bridge units. Therefore, according to this embodiment of the present invention, the busbars are not arranged as layers of a common circuit board, but are arranged as separate, separately constructed elements. For example, in this case, the individual busbars can be respectively constructed as copper plates, or can actually be manufactured by welding on metal parts such as copper. The size and size of the individual busbars can be flexibly and freely selected, and can actually be adjusted according to the given installation space. The corresponding individual or all busbars are arranged close to each other relative to the cooling body and the semiconductor switching elements, thereby reducing or keeping the inductive resistance as small as possible. Therefore, it is particularly possible to reduce the intermediate circuit inductance and the total inductance of the commutation circuit. Due to the short distance between the connection of the switching element and the busbar, the commutation circuit can be optimized.

[0026] According to an embodiment, one, more or all of the first busbar, the second busbar and the third busbar are arranged on the second side of the cooling body facing away from the plurality of half-bridge units, in particular, on the side of at least one capacitor unit facing away from the cooling body. Alternatively or additionally, one, more or all of the first busbar, the second busbar and the third busbar are arranged on the side of the plurality of half-bridge units facing away from the cooling body. Thus, the single busbar can be flexibly arranged relative to the cooling body. In practice, retaining elements can be provided, into which the single busbar can be inserted or pushed, so as to fasten the busbar in a position parallel to the main extension plane of the single half-bridge unit. In addition, these retaining elements can be mechanically connected to the cooling body.

[0027] According to one embodiment, the first busbar or positive busbar and the third busbar or negative busbar are arranged in parallel with each other on the second side of the cooling body away from the plurality of half-bridge units, in particular, on the side of at least one capacitor unit away from the cooling body. The two busbars can be electrically insulated from each other in particular by an electrical busbar insulation layer. Then, the second busbar or output phase busbar is arranged on the side of the plurality of half-bridge units away from the cooling body. In fact, at least one first retaining element can be provided for fastening the second busbar relative to the first side of the cooling body, and at least one second retaining element can be provided for fastening the first busbar and the third busbar relative to the second side of the cooling body. Therefore, compared with the positive busbar and the negative busbar, the second busbar or the output phase busbar has a larger spacing relative to the cooling body and the housing of the half-bridge switch assembly, so that the output common mode capacitance can be reduced.

[0028] According to one embodiment, the half-bridge switch assembly further comprises a circuit board or a control circuit board or a power circuit board, wherein the circuit board is arranged relative to the cooling body in such a manner that the main extension plane of the circuit board is respectively perpendicular or at least substantially perpendicular to the direction of the corresponding main extension plane of the single half-bridge unit. In particular, the circuit board can be constructed as a (power) circuit board with grooves as described above, for uniformly distributing the current through the circuit board and through the single semiconductor switch element. Therefore, the corresponding circuit board is also respectively perpendicular or at least substantially perpendicular to the direction of the main extension plane of the first busbar, the second busbar and the third busbar. In particular, in particular, the circuit board is arranged on the third side of the cooling body, the third side is perpendicular or at least substantially perpendicular to its first side, in particular, the first side is arranged with a half-bridge unit. At least one third connection (in particular the corresponding gate connection and Kelvin connection) of the corresponding single semiconductor switch element can be electrically connected to the circuit board. According to one embodiment, the first busbar, the second busbar and the third busbar each have at least one contact element for electrically connecting to the circuit board. In particular, these individual contact elements can be respectively configured in a fork-shaped, U-shaped, V-shaped or Y-shaped manner. The individual contact elements can extend from the respective sheet-like busbars in the direction of the circuit board and be firmly connected there to the circuit board by bonding, in particular by soldering or sintering. The circuit board can have a plurality of layers, wherein one or more of these layers are respectively provided for supplying power to the first, second or third busbar. The contact elements of the individual busbars can be conveniently electrically connected to the corresponding one or more circuit board layers, in particular by soldering or sintering.

[0029] According to one embodiment, the half-bridge switch assembly further comprises at least one electrical cooling body insulation layer, through which the cooling body and the circuit board are electrically insulated from each other. The cooling body insulation layer is made of a good thermally conductive material with low thermal resistance so that heat can be effectively conducted from the circuit board to the cooling body.

[0030] In particular, the half-bridge switching assembly or the half-bridge power stage can be used in a converter or converter circuit, in fact, in an inverter or converter for alternating conversion of a DC voltage and an AC voltage, wherein a parallel circuit of half bridges can be provided accordingly for one phase of a multi-phase AC voltage. In fact, for this purpose, the first busbar and the third busbar can be electrically connected to a DC voltage connection, and the second busbar can be electrically connected to an AC voltage connection.

[0031] Half-bridge switch assemblies are particularly suitable for use in (motor) vehicles to convert the voltage between a DC voltage vehicle power supply and a motor that can be operated using a multi-phase AC voltage in a corresponding manner. The required power or current intensity can be achieved by a parallel circuit of half-bridges, especially in high-power converters in the vehicle field. For this purpose, the first bus and the third bus can be connected to the DC voltage vehicle power supply and the second bus can be connected to one phase of the motor. Therefore, a parallel circuit of a half-bridge switch assembly or a single half-bridge thereof can be set for one phase of the motor in particular. The half-bridge switch assembly is then used to control the half-bridge of one phase of the motor. Therefore, a corresponding number of half-bridge switch assemblies can be set in each multi-phase inverter of the (motor) vehicle, for example three half-bridge switch assemblies for a three-phase motor.

[0032] Other advantages and embodiments of the present invention are shown in the specification and the drawings. The present invention is schematically illustrated by the embodiments in the drawings, and the present invention will be described below with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A circuit diagram of an embodiment of a half-bridge switch assembly according to the present invention is schematically shown.

[0034] FIG. 2 schematically shows a half-bridge cell of an exemplary embodiment of a half-bridge switching assembly according to the invention in views a) to c).

[0035] FIG. 3 schematically shows in views a) to c) a heat sink with half-bridge cells in an exemplary embodiment of a half-bridge switching assembly according to the invention.

[0036] FIG. 4 schematically shows an exemplary embodiment of a half-bridge switching arrangement according to the invention in views a) to d).

[0037] FIG. 5 schematically shows a further exemplary embodiment of a half-bridge switching arrangement according to the invention in views a) to e).

[0038] Figure 6 A circuit diagram schematically shows a measurement solution for an exemplary embodiment of a half-bridge switching assembly. DETAILED DESCRIPTION

[0039] In the figures, the same reference signs denote identical or structurally identical elements.

[0040] exist Figure 1 Schematically showing a circuit diagram of an embodiment of a half-bridge switch component according to the present invention, the half-bridge switch component is represented by 1.

[0041] The half-bridge switch assembly 1 is provided for rectification or alternation between the DC voltage connection 3, 4 and the AC voltage connection 2 and has a plurality of half-bridges 5 connected in parallel, each half-bridge having a discrete first semiconductor switching element 11 and a discrete second semiconductor switching element 21, for example in the form of a metal oxide semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). The first semiconductor switching element 11 of the half-bridge 5 connected in parallel forms a high-side switch 10, while the second semiconductor switching element 21 of the half-bridge 5 connected in parallel forms a low-side switch 20. The number of half-bridges 5 connected in parallel and the number of individual first semiconductor switching elements 11 and second semiconductor switching elements 21 can be selected in accordance with the specific situation in order to achieve the desired power or the desired current. The half-bridge switch assembly 1 also has a first busbar or positive busbar 30, a second busbar or output phase busbar 70 and a third busbar or negative busbar 40. The drain terminals (first terminals) of the first semiconductor switch elements 11 are electrically connected to the positive bus 30. The source terminals (second terminals) of the first semiconductor switch elements 11 are electrically connected to the output phase bus 70. In addition, the drain terminals (first terminals) of the single second semiconductor switch elements 21 are also electrically connected to the output phase bus 70. The source terminals (second terminals) of the second semiconductor switch elements 21 are electrically connected to the negative bus 40.

[0042] Furthermore, a plurality of first capacitor elements 51 are provided as a primary intermediate circuit 50, wherein the first capacitor elements 51 are respectively connected in parallel with the parallel circuit of a single half bridge 5. A plurality of second capacitor elements 51' are provided as a secondary or distributed intermediate circuit 50', wherein each of the second capacitor elements 51' is respectively connected in parallel with one of the half bridges 5.

[0043] In practice, the assembly 1 can be used in a (motor) vehicle. For example, the DC voltage connections 3, 4 in the assembly 1 can be connected to a DC voltage vehicle power supply, while one phase of the motor can be connected to the AC voltage connection 2. The motor can be a multi-phase machine, in practice usually three or more phases. In particular, for each phase, there is provided a Figure 1The half-bridge switch assembly shown has a plurality of half-bridges 5 connected in parallel. In addition, a control unit for triggering individual switching elements 11, 21 can be provided, wherein the control unit can trigger the gate connection of the switching elements 11, 21 according to the specific situation to achieve current rectification or alternation.

[0044] The single half bridge 5 and each of the first semiconductor switch elements 11 and each of the second semiconductor switch elements 21 are provided in the form of a half bridge unit or a half bridge module, which will be described below with reference to FIG. 2 . Figure 2a and 2b Schematically shows a half-bridge unit used in a half-bridge switch assembly according to an embodiment of the present invention, and the half-bridge unit is denoted by 100 .

[0045] The half-bridge unit 100 has a first semiconductor switching element 110, a second semiconductor switching element 120 and a carrier element 106, wherein the first semiconductor switching element 110 and the second semiconductor switching element 120 are arranged on the carrier element 106. In practice, the carrier element 106 is constructed in a sheet-like or planar manner and is made of a material with good thermal conductivity and low thermal resistance, and is particularly suitable for being made of a ceramic material, for example, made of aluminum oxide (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4). The ceramic carrier element 106 is also used to electrically insulate the two semiconductor switching elements 110 and 120 from each other. A layer 105 (especially a copper layer 105) composed of a good thermal conductive material is placed on the back side of the carrier element 106 facing away from the semiconductor switching elements 110 and 120, which is used for heat conduction and heat diffusion.

[0046] exist Figure 2c Schematically shown in FIG. 1 is a carrier element 106 of a half-bridge cell 100 . Figure 2c The top view of the upper side of the carrier element 106 is shown, on which the semiconductor switching elements 110 and 120 are arranged. A first section 107 of the upper side of the ceramic carrier element 106 is a metallized section, for example a section metallized with silver, on which the semiconductor switching elements 110 and 120 are arranged. A second section 108 of the upper side of the ceramic carrier element 106 is not metallized, on which the semiconductor switching elements 110, 120 are not arranged. The first section 107 made of metallized ceramic allows for easy soldering of the leadframes of the semiconductor switching elements.

[0047] Each half-bridge unit 100 exists as a separate device or is structurally separated before being assembled or arranged in the half-bridge switch assembly. A plurality of such half-bridge units 100 can be arranged on a cooling body of the half-bridge switch assembly, as will be described below with reference to FIG. 3 .

[0048] exist Figure 3aSchematically shows a cooling body for a half-bridge switch assembly according to an embodiment of the present invention, and the cooling body is denoted by 180 .

[0049] like Figure 3a As shown, a plurality of half-bridge units 100 should be arranged on the cooling body 180. For this purpose, an adhesive layer 181 can be provided so as to firmly bond the half-bridge unit 100 to the cooling body. Alternatively or additionally, a clamping element 182 can also be provided for each of the half-bridge units 100 so as to press each half-bridge unit 100 against the cooling body 180. In practice, the individual clamping elements 182 can be made of spring steel or the like and fastened to the cooling body 180 by means of a fixing mechanism 183 (e.g., a screw). Figure 3b and Figure 3c The heat sink 180 and the half-bridge unit 100 are shown in the assembled state.

[0050] In the example shown, five half-bridge units 100 are shown, so that the half-bridge switch assembly has five half-bridges connected in parallel. However, the number of half-bridge units 100, and therefore the number of half-bridges connected in parallel, can also be greater or smaller, depending in particular on the required power or the required current, which is the sum of the current flowing through the semiconductor switching elements. The half-bridge units 100 are modular components, which can be combined with each other in a structurally simple, flexible and scalable manner to produce a half-bridge switch assembly for an inverter phase.

[0051] A single busbar can be arranged on the assembly consisting of the cooling body 180 and the half-bridge unit 100. According to a first embodiment, the busbar can be constructed as a component of a common circuit board, which will be explained below with reference to the multiple views a) to d) in FIG. Figure 4a 2 shows an embodiment of a half-bridge switch assembly according to the present invention in a perspective exploded view and the half-bridge switch assembly is denoted by 200 . Figure 4b The half-bridge switch assembly 200 is shown in a three-dimensional view in an assembled state.

[0052] like Figure 4a and Figure 4b As shown, the half-bridge switch assembly 200 has a common circuit board 260 (see FIG. Figure 4c ), wherein the first busbar, the second busbar and the third busbar are respectively constructed as components of the common circuit board 260. The common circuit board 260 is arranged relative to the heat sink 180 in such a way that the main extension plane of the common circuit board 260 is respectively (at least substantially) perpendicular to the direction of the main extension planes of the individual half-bridge units 100.

[0053] In fact, the common circuit board 260 is arranged on a side of the cooling body which is perpendicular to the first side thereof adjacent to the half-bridge unit 100. The common circuit board 260 can be mechanically connected to the cooling body 180 on this side by a fixing mechanism 264 such as a screw.

[0054] An electrical cooling body insulation layer 290 is arranged between the cooling body 180 and the common circuit board 260, through which the cooling body 180 and the common circuit board 260 are electrically insulated from each other. The cooling body insulation layer 290 can be made of a good thermally conductive material with low thermal resistance, so that heat can be conducted from the circuit board 260 to the cooling body 180. In addition, the half-bridge switch component 200 has a plurality of capacitor units 250, which are respectively arranged on the (second) side of the cooling body 180 away from the plurality of half-bridge units 100. Each of these capacitor units 250 has at least one discrete capacitor element. These capacitor units 250 or their individual capacitor elements are respectively, in particular, intermediate circuit capacitors. In fact, each of the capacitor units 250 can provide a primary intermediate circuit capacitor and / or a secondary or distributed intermediate circuit capacitor.

[0055] In the example shown, five parallel-connected DC capacitors are provided as capacitor units, but the number of capacitor elements may also be more or less. In particular, the size of the DC intermediate circuit may depend on a number of factors, such as the output current or output power of the inverter, the change in the modulation index, the required voltage ripple, and the ripple current load capacity of a single capacitor. The number of capacitor units may vary depending on the application. The half-bridge switch assembly 200 has the flexibility to expand the intermediate circuit at different power levels. The number of capacitor units may be different from the number of half bridges. The capacitor unit is very close to the half bridge, which reduces the inductance of the commutation circuit. The capacitor unit 250 may be cooled by the cooling body 180. In addition, the capacitor unit 250 may be cooled by thermal contact with the housing of the inverter through the surface material or filler, thereby further improving the cooling effect of the intermediate circuit.

[0056] The common circuit board 260 has electrical connectors 261, 262, and 263. In practice, the first electrical connector 261 can be configured to electrically connect the positive busbar to the positive DC voltage connector. In practice, the second connector 262 can be configured to electrically connect the negative busbar to the negative DC voltage connector. In practice, the third connector 263 can be configured to electrically connect the output phase busbar to one or more AC voltage connectors. Figure 4cAs shown, the common circuit board 260 can actually have one layer or solder layer as the positive busbar 230, two layers as the negative busbar 240, and three layers as the output phase busbar 270. These individual layers or busbars 230, 240, 270 are respectively constructed in a sheet-like or planar manner and are arranged parallel to each other in the common circuit board 260. In fact, the number and thickness of the individual layers can be selected according to the current flowing through each busbar. Therefore, the busbars 230, 240, 270 are arranged close to each other, so that the inductive resistance can be reduced or the inductive resistance can be kept as low as possible. Therefore, in particular, a low intermediate circuit inductance and a low total inductance of the commutation circuit can be achieved. Due to the short distance between the connection of the switching elements 110, 120 and the busbars 230, 240, 270, the commutation circuit can be optimized.

[0057] Figure 4d The schematic top view shows the individual layers or busbars 230, 240, 270 of a common circuit board 260 separated from each other. For example, the positive busbar 230 can have a plurality of first contact elements 231, so as to be respectively used for electrical connection to the respective drain terminals of the individual first semiconductor switching elements 110. In addition, the positive busbar 230 can have a plurality of second contact elements 232 for electrical connection to the capacitor unit 250 and one or more third contact elements 233 for electrical connection to the first terminal 261 of the common circuit board 260.

[0058] In fact, each of the negative busbar layers 240 may have a plurality of first contact elements 241, respectively, so as to be respectively used to electrically connect to the source terminals of the individual second semiconductor switch elements 120. In addition, the negative busbar 240 may have a plurality of second contact elements 242 for electrically connecting to the capacitor unit 250 and one or more third contact elements 243 for electrically connecting to the second terminal 262 of the circuit board 260. In fact, each of the output phase busbar layers 270 may have a plurality of first contact elements 271 and a plurality of second contact elements 272, respectively, the first contact elements 271 being used to electrically connect to the source terminals of the individual first semiconductor switch elements 110, and the second contact elements 272 being used to electrically connect to the drain terminals of the individual second semiconductor switch elements 120. In addition, the output phase busbar layer 270 may have one or more (two in this example) third contact elements 273, for electrically connecting to the third terminal 263 of the circuit board 260.

[0059] According to an alternative embodiment of the invention, the busbars can also be provided as individual, separately constructed components and should not be part of a common printed circuit board, as will be explained below with reference to FIG. 5 in different views a) to f).

[0060] exist Figure 5aAn embodiment of a half-bridge switch assembly according to the present invention is shown in a perspective exploded view and is referenced by 300 . Figure 5b The half-bridge switching assembly 300 is shown in a perspective view in the assembled state.

[0061] Half-bridge switching assembly 300 furthermore has a plurality of capacitor cells 350 , each of which is arranged on a second side of heat sink 180 facing away from the plurality of half-bridge cells 100 .

[0062] The positive busbar 330 , negative busbar 340 and output phase busbar 370 are each formed in a sheet-like manner and arranged relative to the heat sink 180 so that the main extension planes of these busbars 330 , 340 and 370 are respectively (at least substantially) parallel to the direction of the main extension planes of the individual half-bridge units 100 .

[0063] In fact, the positive busbar 330 and the negative busbar 340 are arranged in parallel with each other on the side of the capacitor unit 350 away from the cooling body 180. The output phase busbar 370 is actually arranged on the side of the plurality of half-bridge units 100 away from the cooling body 180. Therefore, compared with the positive busbar 330 and the negative busbar 340, the distance between the output phase busbar 370 and the cooling body 180 and the housing of the half-bridge switch assembly 300 is larger, so that the output with reduced common mode capacitance can be achieved. An electrical busbar insulation layer 395 parallel to these busbars is arranged between the positive busbar 330 and the negative busbar 340, and the two busbars 330, 340 are electrically insulated from each other by the electrical busbar insulation layer.

[0064] For example, two first holding elements 305 are provided for fastening the output phase busbar 370. Furthermore, in practice, two second holding elements 306 are provided for fastening the positive busbar 330, the negative busbar 340, and the busbar insulating layer 395.

[0065] In addition, the half-bridge switch assembly 300 has a circuit board 360, which is arranged relative to the heat sink 180 in such a manner that the main extension plane of the circuit board 360 is respectively (at least substantially) perpendicular to the direction of each main extension plane of the single half-bridge unit 100 and is also respectively perpendicular to the direction of each main extension plane of the positive bus 330, the negative bus 340 and the output phase bus 370. The circuit board 360 is actually arranged on one side of the heat sink, which side is vertically connected to the first side of the heat sink, and the half-bridge unit 100 is arranged on this first side. The circuit board 360 can be mechanically connected to the heat sink 180 on this side by means of a fixing mechanism 364 (such as a screw).

[0066] An electrical cooling body insulation layer 391 is arranged between the cooling body 180 and the circuit board 360, by which the cooling body 180 and the circuit board 360 are electrically insulated from each other. In addition, a layer 390 is arranged between the cooling body 180 and the circuit board 360 as a spacer or gap filler. In particular, the cooling body insulation layer 391 and the layer 390 are each made of a good thermally conductive material with low thermal resistance, so that heat can be conducted from the circuit board 360 to the cooling body 180.

[0067] Furthermore, a plurality of decoupling capacitors 361 are arranged on the side of the printed circuit board 360 facing away from the heat sink 180 in order to reduce the inductance of the commutation loop. For example, the decoupling capacitors 361 can each be configured as a ceramic multilayer capacitor.

[0068] In addition, a boost stage 362 may be provided on the circuit board 360 for each semiconductor switch element 110 , 120 to reduce the negative impact of uneven distances between a main gate driver or multiple main gate drivers and the gate terminals of each switch element.

[0069] The output phase busbar 370 has a plurality of contact elements 371 for electrical connection to the circuit board 360. In practice, these contact elements 371 can be respectively configured in a fork shape or a Y shape and extend from the sheet-like busbar 370 in the direction of the circuit board 360, and there are firmly connected to the circuit board by bonding, in particular by welding or sintering connection.

[0070] Figure 5c An assembly consisting of the positive busbar 330 , the negative busbar 340 , the busbar insulating layer 395 , and the second holding element 306 is shown in an exploded perspective view. Figure 5d The components are shown in a three-dimensional view in the assembled state. Figure 5c and Figure 5d As shown, the positive busbar 330 and the negative busbar 340 corresponding to the output phase busbar 370 respectively have a plurality of (eg, fork-shaped or Y-shaped) contact elements 331 and 341 for electrical connection with the circuit board 360 .

[0071] The circuit board can have a plurality of layers, wherein one or more of the layers are respectively provided for supplying power to the positive busbar 330, the negative busbar 340 and the output phase busbar 370. The individual contact elements 331, 341 or 371 of the respective individual busbars 330, 340 or 370 are electrically connected to a respective circuit board layer or a plurality of respective circuit board layers, in particular, by soldering or sintering.

[0072] exist Figure 5e In FIG. 3 , two such layers 365 , 367 of printed circuit board 360 are shown separated from one another in a schematic top view.

[0073] like Figure 5e As shown in FIG, the circuit board or individual layers 365, 367 of the circuit board 360 respectively have a plurality of slot-shaped recesses 366 or 368. These slots 366, 368 are provided to achieve a uniform distribution of the current through the circuit board 360 and through the individual first and second semiconductor switching elements 110, 120.

[0074] In practice, during the development, manufacturing or debugging of the half-bridge switch arrangement 300, the number and location of these gaps on each circuit board layer can be determined with the aid of measurements and optimization algorithms, which will be referred to below. Figure 6 Provide explanation.

[0075] exist Figure 6 The schematic diagram shows Figure 1 A corresponding circuit diagram of a portion of an embodiment of a half-bridge switch assembly according to the present invention is shown and is labeled 600 .

[0076] according to Figure 1 As shown in the circuit diagram, the half-bridge switch assembly 600 further has a positive DC voltage connection 603 , a negative DC voltage connection 604 , an AC voltage connection 602 , a positive bus 630 , a negative bus 640 , and an output phase bus 670 .

[0077] Furthermore, n parallel-connected half bridges 605 are provided, wherein the individual first semiconductor switching elements or high-side switching elements 610 are each connected by T H1 , T H2 , T H3 ,…,T Hn and the single second semiconductor switch element or the low-side switch element 620 is represented by T L1 , T L2 , T L3 ,…,T Ln To express.

[0078] The impedances between the single half bridges 605 connected in parallel in the positive bus 630 are represented by Z 11 , Z 12 , Z 13 , …, Z 1n The impedances between the single half bridges 605 connected in parallel in the output phase bus 670 are represented by Z 21 , Z 22 , Z 23 , …, Z 2n The impedances between the single half bridges 605 connected in parallel in the negative bus 640 are represented by Z 31 , Z 32 , Z 33 , …, Z 3n To express.

[0079] exist Figure 6 In FIG. 1 , when the output current is positive, it is shown by solid lines I1 and I2 , respectively, and when the output current is negative, it is shown by dotted lines I3 and I4 .

[0080] Line I2 represents when the current is positive and the switching element T H1 The current path from the input to the output when it is first turned on. Line I1 represents the current path from the input to the output when T Hn The current path when it is turned on faster. In both cases, the impedance through which the current flows should be equal, that is, Z 1m =Z 2m , m∈(1, 2, ..., n) to ensure that the current is evenly distributed in the above case.

[0081] Therefore, line I4 represents when the current is negative and the switching element T L1 The current path when it is first turned on, and line I3 represents the current path when T Ln The negative current should also be evenly distributed and Z should be applied 2m =Z 3m , m∈(1, 2,…, n).

[0082] In particular, the following should be observed as general rules: 1m =Z 2m =Z 3m , where m∈(1, 2, …, n), so as to ensure that Z THq =Z THm and Z TLq =Z TLm , where q∈(1, 2, …, n) and m∈(1, 2, …, n).

[0083] In order to satisfy Z 1m =Z 2m =Z 3m This condition, where m∈(1, 2, ..., n), sets corresponding gaps 366 and 368 in the layers of the circuit board. The size and position of each gap can be determined by a corresponding algorithm.

[0084] Reference numerals list

[0085] 1Half-bridge switch assembly

[0086] 2 AC voltage connector

[0087] 3 DC voltage connector

[0088] 4 DC voltage connectors

[0089] 5Half Bridge

[0090] 10 High-side switches

[0091] 11 first semiconductor switch element

[0092] 20 low side switches

[0093] 21 second semiconductor switch element

[0094] 30 positive bus

[0095] 40 negative bus

[0096] 50 Primary intermediate circuit

[0097] 51 First intermediate circuit capacitor

[0098] 50' Second intermediate loop

[0099] 51' Second intermediate circuit capacitor

[0100] 70 output phase bus

[0101] 100 half-bridge units

[0102] 105 copper layer

[0103] 106 carrier element

[0104] 107 Metallized section of the upper side of the carrier part

[0105] 108 Non-metallized section of the top side of the carrier element

[0106] 110 first semiconductor switch element

[0107] 120 second semiconductor switch element

[0108] 180 cooling body

[0109] 181 Adhesion layer

[0110] 182 Clamping element

[0111] 183Fixing mechanism, screws

[0112] 200 half-bridge switch assembly

[0113] 230 first busbar, positive busbar

[0114] 231 contact element

[0115] 232 contact element

[0116] 233 contact element

[0117] 240 Third bus, negative bus

[0118] 241 contact element

[0119] 242 contact element

[0120] 243 contact element

[0121] 250 capacitor units

[0122] 260 shared circuit boards

[0123] 261 electrical connector

[0124] 262 electrical connector

[0125] 263 electrical connector

[0126] 264Fixing mechanism, screws

[0127] 270 Second bus, output phase bus

[0128] 271 contact element

[0129] 272 contact elements

[0130] 273 contact element

[0131] 290 Electric cooling body insulation layer

[0132] 300 Half-bridge switch assembly

[0133] 305 first holding element

[0134] 306 second holding element

[0135] 330 first busbar, positive busbar

[0136] 331 contact element

[0137] 340 Third busbar, negative busbar

[0138] 341 contact element

[0139] 350 capacitor units

[0140] 360 Circuit Board

[0141] 361 Decoupling capacitor

[0142] 362 boost level

[0143] 364Fixing mechanism, screws

[0144] 365 circuit board layers

[0145] 366 grooves and gaps

[0146] 367 circuit board layers

[0147] 368 grooves and gaps

[0148] 370 Second bus, output phase bus

[0149] 371 contact element

[0150] 390 Layer as spacer or gap filler

[0151] 391 Electric cooling body insulation layer

[0152] 395 busbar insulation layer

[0153] 602 AC voltage connector

[0154] 603 DC voltage connector

[0155] 604 DC voltage connector

[0156] 602 Half Bridge

[0157] 610 first semiconductor switch element, high-side switch element

[0158] 620 second semiconductor switch element, low-side switch element

[0159] 630 positive bus

[0160] 640 negative bus

[0161] 670 output phase bus

Claims

1. A half-bridge switch assembly (1, 200, 300), the half-bridge switch assembly having a plurality of half-bridges (5) connected in parallel, wherein each half-bridge (5) has a first semiconductor switch element (11, 110) and a second semiconductor switch element (21, 120), the half-bridge switch assembly comprising: A plurality of half-bridge units (100), wherein each half-bridge unit comprises one of the first semiconductor switching elements (11, 110), one of the second semiconductor switching elements (21, 120) and a carrier element (106), wherein each first semiconductor switching element (11, 110) and each second semiconductor switching element (21, 120) are arranged on each carrier element (106), wherein each half-bridge unit (100) exists as a separate component before being arranged in a half-bridge switch assembly (1, 200, 300); A cooling body (180), wherein the plurality of half-bridge units (100) are in thermal contact with the cooling body (180); A first busbar (30, 230, 330), first joints of individual first semiconductor switch elements (11, 110) of a plurality of half-bridge units (100) being electrically connected to the first busbar (30, 230, 330), respectively; a second busbar (70, 270, 370), to which second connections of single first semiconductor switch elements (11, 110) of the plurality of half-bridge units (100) and first connections of single second semiconductor switch elements (21, 120) of the plurality of half-bridge units (100) are electrically connected respectively; A third busbar (40, 240, 340), to which the second connections of the individual second semiconductor switch elements (21, 120) of the plurality of half-bridge units (100) are electrically connected respectively.

2. The half-bridge switch assembly (1, 200, 300) according to claim 1, further comprising: At least one adhesive layer (181), which is arranged between the cooling body (180) and a single half-bridge unit (100), and / or further comprises: at least one clamping element (182), which presses at least one of the half-bridge units (100) against the cooling body (180).

3. The half-bridge switch assembly (1, 200, 300) according to claim 1 or 2, wherein: Each carrier element (106) of each half-bridge unit (100) is made of ceramic material.

4. The half-bridge switch assembly (1, 200, 300) according to claim 3, wherein: A first section (107) of the top side of the respective carrier element (106) of each half-bridge unit (100) is metallized, wherein the respective first semiconductor switching element (11, 110) and the respective second semiconductor switching element (21, 120) are arranged on the first section.

5. The half-bridge switch assembly (1, 200, 300) according to claim 4, wherein: A second section (108) of the top side of the carrier element (106) of each half-bridge unit (100) is not metallized, wherein the first semiconductor switching elements (11, 110) and the second semiconductor switching elements (21, 120) are not mounted on the second section.

6. The half-bridge switch assembly according to any one of the preceding claims, further comprising: At least one capacitor unit (50, 250, 350), each of the capacitor units comprising: at least one capacitor element, wherein the at least one capacitor unit (50, 250, 350) is arranged on a side of the cooling body (180) facing away from the plurality of half-bridge units (100).

7. The half-bridge switch assembly (1, 300) according to any one of the preceding claims, further comprising: A circuit board (360), wherein at least one groove (366, 368) is arranged in the circuit board (360) or in a single layer or multiple layers (365, 367) of the circuit board (360) for uniformly distributing the current through the circuit board (360) and through a single first semiconductor switching element (110) and a single second semiconductor switching element (120).

8. The half-bridge switch assembly (1, 200) according to any one of the preceding claims, further comprising: A common circuit board (260), wherein the first busbar (230), the second busbar (270) and the third busbar (240) are respectively constructed as individual components of the common circuit board (260), wherein the common circuit board (260) is arranged relative to the cooling body (180) in such a way that the main extension plane of the common circuit board (260) is respectively perpendicular or at least substantially perpendicular to the direction of each main extension plane of the individual half-bridge units (100).

9. The half-bridge switch assembly (1, 200) according to claim 8, further comprising: At least one electrical cooling body insulation layer (290), by which the cooling body (180) and the common circuit board (260) are electrically insulated from each other.

10. The half-bridge switch assembly (1, 300) according to any one of claims 1 to 7, wherein: The first busbar (330), the second busbar (370) and the third busbar (340) are respectively constructed in a sheet-like manner and are arranged relative to the cooling body (180) in such a way that the main extension planes of the first busbar (330), the second busbar (370) and the third busbar (340) are respectively parallel to or at least substantially parallel to the direction of the main extension planes of the single half-bridge unit (100).

11. The half-bridge switch assembly (1, 300) according to claim 10, wherein: One, more or all of the first busbar (330), the second busbar (370) and the third busbar (340) are arranged on a side of the cooling body (180) facing away from the plurality of half-bridge units (100), in particular on a side of the at least one capacitor unit (350) facing away from the cooling body (180), and / or wherein: One, a plurality or all of the first busbar (330), the second busbar (370) and the third busbar (340) are arranged on a side of the plurality of half-bridge units (100) facing away from the cooling body (180).

12. The half-bridge switch assembly (1, 300) according to claim 11, wherein: The first busbar (330) and the third busbar (340) are arranged parallel to each other on a side of the cooling body (180) facing away from the multiple half-bridge units (100), in particular, on a side of the at least one capacitor unit (350) facing away from the cooling body (180), wherein the second busbar (370) is arranged on a side of the multiple half-bridge units (100) facing away from the cooling body (180).

13. The half-bridge switch assembly (1, 300) according to any one of claims 10 to 12, further comprising: A circuit board (360), wherein the circuit board (360) is arranged relative to the cooling body (180) in such a way that a main extension plane of the circuit board (360) is respectively perpendicular or at least substantially perpendicular to the direction of each main extension plane of a single half-bridge unit (100).

14. The half-bridge switch assembly (1, 300) according to claim 13, wherein: The first busbar (330), the second busbar (370) and the third busbar (340) each have at least one, in particular fork-shaped or Y-shaped, contact element for electrically connecting to the circuit board.

15. The half-bridge switch assembly (1, 300) according to claim 13 or 14, further comprising: At least one electrical cooling body insulation layer (391), the cooling body (180) and the circuit board (360) are electrically insulated from each other by the electrical cooling body insulation layer.

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