Solar cell and manufacturing method thereof
In the preparation process of TBC cells, laser doping and annealing treatment technology is used to form P-type and N-type doped polycrystalline silicon material layers, which solves the problems of many steps and high costs in the existing process, and achieves process simplification and cost reduction .
CN119486309APending Publication Date: 2025-02-18TRINA SOLAR CO LTD
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Patent Information
- Application Number
- CN202411554943.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-04
- Publication Date
- 2025-02-18
AI Technical Summary
Technical Problem
The preparation process of existing TBC batteries requires repeated process of deposition, doping and patterning, resulting in many steps and high costs.
Method used
By providing a substrate, including a substrate, a tunneling material layer and an intrinsic amorphous silicon layer, laser doping and annealing is performed using a pre-set doping source to form a P-type and N-type doped polycrystalline silicon material layer, simplifying the Process steps.
Benefits of technology
Two different types of doped polysilicon material layers are achieved simultaneously in one laser doping and one annealing treatment, reducing process steps and costs.
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Smart Images
Figure CN119486309A_ABST
Abstract
The invention relates to a solar cell and a manufacturing method thereof. The manufacturing method of the solar cell comprises the steps of providing a substrate, wherein the substrate comprises a substrate, a tunneling material layer and an intrinsic amorphous silicon layer, and the tunneling material layer and the intrinsic amorphous silicon layer are sequentially stacked on the first surface of the substrate; a P-type first doping source and an N-type second doping source are respectively arranged on the surface, deviating from the substrate, of the intrinsic amorphous silicon layer at positions corresponding to the first region and the second region; performing laser doping on the part, covered by the first doping source, in the intrinsic amorphous silicon layer; annealing treatment is carried out, the part, covered by the first doping source, in the intrinsic amorphous silicon layer forms a first doped polycrystalline silicon material layer, and the part, covered by the second doping source, in the intrinsic amorphous silicon layer forms a second doped polycrystalline silicon material layer; and removing each film layer covering the surface of the isolation region, and removing the residual first doping source and the second doping source. The solar cell and the manufacturing method thereof have the advantages of fewer steps and lower cost.
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