Integrated device, manufacturing method, detection device and terminal

Abstract

The invention provides an integrated device, a manufacturing method, a detection device and a terminal, and the detection device can be a laser radar, relates to the technical field of electronics, and is used for reducing parasitism introduced into the integrated device so as to improve the effective energy conversion efficiency of the integrated device. The integrated device comprises a substrate which is provided with at least two etching layers which are alternately arranged in a stacked manner; a laser disposed on the substrate; at least one filling structure is arranged on the side, away from the laser, of the substrate, the substrate and the filling structure can form a capacitor, the filling structure comprises an insulating layer and a first metal layer, and the height of the filling structure is smaller than the thickness of the substrate. The laser and the capacitor are arranged on the same substrate, so that the distance between the laser and the capacitor can be reduced in a three-dimensional layout mode, and meanwhile, interconnection between the laser and the capacitor is realized, thereby greatly reducing parasitism introduced into the structure of the integrated device.

Description

Integrated device, manufacturing method, detection device and terminal Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to an integrated device, a manufacturing method, a detection device and a terminal. Background Art

[0002] LiDAR (light detection and ranging) is an optical measurement device that operates by emitting a laser signal toward an object and receiving a reflected return signal. The device then compares the return signal with the laser signal to determine parameters such as the object's position and distance. LiDAR accurately scans surrounding objects to form high-definition images, enabling rapid object identification and decision-making. It has been widely used in applications such as smart cars, intelligent transportation, 3D urban mapping, and atmospheric environmental monitoring.

[0003] LiDARs have a variety of components, and their layout on printed circuit boards (PCBs) currently introduces significant additional parasitics. For example, the traces between components on the PCB introduce additional parasitic resistance and inductance into the circuit. The longer the traces, the greater the parasitic values. As a result, during LiDAR operation, more energy is consumed by parasitics, reducing the effective energy conversion efficiency of the laser.

[0004] Summary of the Invention

[0005] The present application provides an integrated device, a manufacturing method, a detection device and a terminal, which are used to reduce parasitics introduced into the integrated device and improve the effective energy conversion efficiency of the integrated device.

[0006] In a first aspect, the present application provides an integrated device, comprising: a substrate having at least two alternating and stacked etching layers, wherein the etching layers may be dielectric layers capable of forming through holes or grooves by etching or photolithography; a laser located on the substrate, for example, a laser diode capable of emitting light at a wavelength of 905 nanometers; at least one filling structure disposed on a side of the substrate away from the laser, wherein the substrate and the filling structure may constitute a capacitor, the filling structure comprising an insulating layer and a first metal layer, the height of the filling structure being less than the thickness of the substrate, i.e., the filling structure does not penetrate the substrate. Optionally, the radial width of the filling structure in the at least two etching layers is different.

[0007] In the above technical solution, by arranging the laser and the capacitor on the same substrate, the distance between the laser and the capacitor can be reduced by a three-dimensional layout, and the interconnection between the laser and the capacitor can be achieved at the same time, so that there is no need to set additional interconnection lines between the laser and the capacitor, thereby greatly reducing the parasitics (such as parasitic inductance and parasitic resistance) introduced into the structure of the integrated device, thereby improving the effective energy conversion efficiency of the integrated device. The above-mentioned substrate has at least two etched layers arranged alternately and stacked, so that the radial width of at least one filling structure arranged in the substrate can be different in different etched layers, so as to increase the specific surface area of ​​the capacitor, thereby facilitating heat dissipation and reducing heat loss.

[0008] In a possible implementation of the first aspect, the at least two etching layers have different etching selectivity materials. In a possible example, the at least two etching layers have two etching selectivity materials, and specifically may include: an aluminum gallium arsenide AlGaAs layer, and a gallium arsenide GaAs layer. That is, the substrate includes stacked and alternating AlGaAs layers and GaAs layers. In the above possible implementation, when the two etching layers include an AlGaAs layer and a GaAs layer, because the lattice constant of the AlGaAs layer is different from the lattice constant of the GaAs layer, and the lattice constant of the AlGaAs layer is smaller than the lattice constant of the GaAs layer, the AlGaAs layer and the GaAs layer are subjected to compressive strain in the xy direction (i.e., two directions parallel to and perpendicular to the etching layers) and tensile strain in the z direction (i.e., a direction perpendicular to the etching layers). In this way, the electrons in the AlGaAs layer and the GaAs layer have a larger mobility and a correspondingly lower resistivity, thereby greatly reducing the parasitic resistance of the integrated device and improving the performance of the integrated device. In addition, since AlGaAs has good electrical conductivity, the use of the AlGaAs layer can further reduce the resistance of the AlGaAs layer itself, thereby further improving the performance of the integrated device.

[0009] In a possible implementation of the first aspect, when the at least two etching layers include an AlGaAs layer and a GaAs layer, the GaAs layer is the etching layer closest to the laser among the at least two etching layers. In the above possible implementation, by arranging the GaAs layer at a position closest to the laser, the current design requirements of the laser are met.

[0010] In a possible implementation of the first aspect, the thickness of the AlGaAs layer and the thickness of the GaAs layer may be the same or different. In one example, the thickness of the AlGaAs layer and the thickness of the GaAs layer are the same.

[0011] In one possible implementation of the first aspect, the AlGaAs layer has a greater etch resistance than the GaAs layer. Accordingly, the radial width of the filling structure in the AlGaAs layer can be greater than the radial width of the filling structure in the GaAs layer, thereby enabling the filling structure to have different radial widths in the stacked and alternating AlGaAs layers and GaAs layers.

[0012] In a possible implementation of the first aspect, a portion of the filling structure located in the AlGaAs layer is distributed in a straight line, and a portion of the filling structure located in the GaAs layer is distributed in an arc. In this possible implementation, by distributing the portion of the filling structure located in the AlGaAs layer in a straight line and the portion located in the GaAs layer in an arc, the filling structure can have a larger surface area, thereby increasing the specific surface area of ​​the capacitor, thereby facilitating heat dissipation and reducing heat loss.

[0013] In one possible implementation of the first aspect, the insulating layer is located between the substrate and the first metal layer and is disposed in contact with the first metal layer. In the above possible implementation, a capacitor design with an MIS structure is provided, where the capacitor is composed of the substrate, the insulating layer, and the first metal layer. In this case, the substrate can be a heavily doped substrate, which can also be called a low-resistivity substrate.

[0014] In a possible implementation of the first aspect, the filling structure further includes a second metal layer, the second metal layer being located between the substrate and the insulating layer. In the above possible implementation, a capacitor design with a MIM structure is provided, i.e., the capacitor is composed of the substrate, the second metal layer, the insulating layer, and the first metal layer. In this case, the substrate can be a lightly doped or undoped substrate, which can also be referred to as a high-resistivity substrate.

[0015] In a possible implementation of the first aspect, the at least one filling structure includes a plurality of filling structures. Optionally, a distance between any two adjacent filling structures in the plurality of filling structures may be the same or different.

[0016] In a possible implementation of the first aspect, the multiple filling structures are in the shape of comb teeth. Optionally, at least two of the multiple filling structures may have the same or different comb teeth. The height of each comb tooth here may refer to the height of the comb tooth extending into the interior of the substrate. In one example, the heights of the multiple filling structures are all the same; or, among the multiple filling structures, the heights of some comb teeth are different from the heights of other comb teeth.

[0017] In a second aspect, the present application provides a method for manufacturing an integrated device, the method comprising: forming a substrate having at least two etching layers arranged alternately and stacked, the etching layer may refer to a dielectric layer capable of forming a through hole or a groove by etching or photolithography; forming a laser on the substrate, the laser may be a laser diode capable of emitting a wavelength of 905 nanometers; forming at least one filling structure on a side of the substrate away from the laser, the substrate and the filling structure may constitute a capacitor, the filling structure comprising an insulating layer and a first metal layer, the height of the filling structure being less than the thickness of the substrate, that is, the filling structure does not penetrate the substrate.

[0018] In a possible implementation of the second aspect, the filling structure has different radial widths in the at least two etching layers. Optionally, the at least two etching layers have different etching selectivity materials.

[0019] In a possible implementation of the second aspect, the at least two etching layers include: an aluminum gallium arsenide AlGaAs layer and a gallium arsenide GaAs layer; and forming the substrate includes: alternately forming the AlGaAs layer and the GaAs layer to form a substrate having the AlGaAs layer and the GaAs layer arranged alternately and stacked.

[0020] In a possible implementation of the second aspect, the last layer of the alternating and stacked AlGaAs layers and the GaAs layers is the GaAs layer, and forming the laser on the substrate includes: forming the laser on the GaAs layer of the substrate. In the above possible implementation, by arranging the GaAs layer at a position closest to the laser, current laser design requirements are met.

[0021] In a possible implementation of the second aspect, the thickness of the AlGaAs layer and the thickness of the GaAs layer may be the same or different. In one example, the thickness of the AlGaAs layer and the thickness of the GaAs layer are the same.

[0022] In a possible implementation of the second aspect, the radial width of the filling structure in the AlGaAs layer is greater than the radial width of the filling structure in the GaAs layer, so that the filling structure has different radial widths in the stacked and alternating AlGaAs layers and GaAs layers.

[0023] In a possible implementation of the second aspect, a portion of the filling structure located in the AlGaAs layer is distributed in a straight line, and a portion of the filling structure located in the GaAs layer is distributed in an arc. In this possible implementation, by distributing the portion of the filling structure located in the AlGaAs layer in a straight line and the portion located in the GaAs layer in an arc, the filling structure can have a larger surface area, thereby increasing the specific surface area of ​​the capacitor, thereby facilitating heat dissipation and reducing heat loss.

[0024] In a possible implementation of the second aspect, the insulating layer is located between the substrate and the first metal layer, and at least one filling structure is formed on the side of the substrate away from the laser, including: etching the side of the substrate away from the laser to form at least one groove, the height of the groove (also referred to as the depth) being less than the thickness of the substrate; forming the insulating layer on the surface of the substrate having the at least one groove, the thickness of the insulating layer being less than half the radial width of the groove; and forming the first metal layer on the insulating layer to obtain the at least one filling structure. In the above possible implementation, a capacitor design with an MIS structure is provided, that is, the capacitor is composed of the substrate, the insulating layer and the first metal layer. In this case, the substrate can be a heavily doped substrate, which can also be called a low-resistivity substrate.

[0025] In a possible implementation of the second aspect, the filling structure further includes a second metal layer, the second metal layer being located between the substrate and the insulating layer, and the insulating layer being formed on the surface of the substrate having the at least one groove, comprising: forming the second metal layer on the surface of the substrate having the at least one groove; and forming the insulating layer on the second metal layer, wherein the sum of the thickness of the second metal layer and the thickness of the insulating layer is less than half of the radial width of the groove. In the above possible implementation, a capacitor design with an MIM structure is provided, i.e., the capacitor is composed of the substrate, the second metal layer, the insulating layer, and the first metal layer. In this case, the substrate can be a lightly doped or undoped substrate, which can also be referred to as a high-resistivity substrate.

[0026] In a possible implementation of the second aspect, the at least one filling structure includes a plurality of filling structures. Optionally, a distance between any two adjacent filling structures in the plurality of filling structures may be the same or different.

[0027] In a possible implementation of the second aspect, the multiple filling structures are in the shape of comb teeth. Optionally, at least two of the multiple filling structures may have the same or different comb teeth. The height of each comb tooth here may refer to the height of the comb tooth extending into the interior of the substrate. In one example, the multiple filling structures are all the same height; or, among the multiple filling structures, the height of some comb teeth is different from the height of other comb teeth.

[0028] In a third aspect, the present application provides an integrated circuit, comprising: an integrated device as provided in the first aspect or any possible implementation of the first aspect, and a switching device; wherein the switching device is coupled to the integrated device.

[0029] In a fourth aspect, the present application provides a detection device, comprising: an integrated device as provided in the first aspect or any possible implementation of the first aspect.

[0030] In a fifth aspect, the present application provides a terminal, comprising: the integrated device provided in the first aspect or any possible implementation of the first aspect. Optionally, the terminal is a vehicle.

[0031] It can be understood that the beneficial effects that can be achieved by any of the manufacturing methods, detection devices and terminals of the integrated devices provided above can correspond to the beneficial effects of the integrated devices provided above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] FIG1 is a schematic diagram of an application scenario of a laser radar provided in an embodiment of the present application;

[0033] FIG2 is a schematic diagram of the internal architecture of a laser radar provided in an embodiment of the present application;

[0034] FIG3A is a schematic structural diagram of a transmitting module provided in an embodiment of the present application;

[0035] FIG3B is a schematic structural diagram of another transmitting module provided in an embodiment of the present application;

[0036] FIG4 is a schematic diagram of a component layout in a transmitting module provided in an embodiment of the present application;

[0037] FIG5 is a schematic structural diagram of an integrated device provided in an embodiment of the present application;

[0038] FIG6 is a schematic structural diagram of another integrated device provided in an embodiment of the present application;

[0039] FIG7 is a schematic diagram of the structure of a capacitor provided in an embodiment of the present application;

[0040] FIG8 is a schematic structural diagram of another integrated device provided in an embodiment of the present application;

[0041] FIG9 is a schematic flow chart of a method for manufacturing an integrated device according to an embodiment of the present application;

[0042] FIG10 is a cross-sectional view of an integrated device provided in an embodiment of the present application during the manufacturing process;

[0043] FIG11 is a flow chart of another method for manufacturing an integrated device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application.

[0045] The "connection" in the embodiments of the present application can be an electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components, such as A and B, or A and C can be directly connected, C and B can be directly connected, and A and B are connected through C. In some scenarios, "connection" can also be understood as coupling, such as electromagnetic coupling between two inductors. In short, the connection between A and B enables the transmission of electrical energy between A and B.

[0046] The terminal names of the electronic components in the embodiments of the present application are merely exemplary and can be understood as connection terminals or connection points for connecting to other circuit components. In other examples, other terminal names, connection terminal names, or connection point names may also be used. For example, in some scenarios, a terminal may also be referred to as a communication terminal, information transmission terminal, terminal, connection terminal, communication connection terminal, information connection terminal, connection point, communication connection point, information connection point, or electrode, etc.

[0047] An embodiment of the present application provides a circuit structure, which can be applied to a detection device, such as a laser radar, in an application scenario. FIG1 exemplarily shows a schematic diagram of an application scenario of a laser radar provided by an embodiment of the present application. In this example, the laser radar 100 is installed on a vehicle, so it is also called a vehicle-mounted laser radar. In addition to vehicle-mounted laser radars, laser radars also include ship-mounted laser radars installed on ships, or airborne laser radars installed on machines, etc. In a possible example, as shown in FIG1 , the laser radar 100 can be installed at the front of the vehicle, so that during the driving of the vehicle, the laser radar 100 can emit a laser signal, which will be reflected by the object after being irradiated by the object, and the reflected target echo signal can be received by the laser radar 100, and then the laser radar 100 detects the environmental information around the vehicle based on the target echo signal, so as to use the environmental information to assist or control the driving functions of the vehicle, such as including but not limited to automatic driving or assisted driving.

[0048] The laser radar 100 can be a mechanical laser radar, a liquid laser radar, a pure solid-state laser radar, or a hybrid solid-state laser radar (also known as a semi-solid-state laser radar), or can be other types of laser radars, and the present embodiment does not specifically limit this. In addition, the housing of the laser radar 100 can be a rectangular parallelepiped as shown in Figure 1, or it can be a cube, a cylinder, a ring, or a special shape, and the present embodiment does not specifically limit the shape of the housing of the detection device.

[0049] Furthermore, FIG2 shows a schematic diagram of the internal architecture of a laser radar provided in an embodiment of the present application. As shown in FIG2 , the laser radar 100 may include a control circuit 110, a transmitting module 120, a scanning module 130, and a receiving module 140. Among them, the transmitting module 120 and the receiving module 140 include optical elements, such as one or more of lenses, filters, polarizers, reflectors, beam splitters, prisms, windows, and scattering plates. The specific number and type of optical elements included are related to the optical design of the transmitting module 120 and the receiving module 140 in the laser radar 100, and are not specifically limited in the embodiment of the present application. The transmitting module 120 may include at least one laser, and the at least one laser may be connected in series or in parallel to emit a detection laser under the control of the control circuit 110. The scanning module 130 may include one or more of a polygonal rotating mirror, an oscillating mirror, a micro-electromechanical system (MEMS) scanning mirror, or a prism, and is used to change the scanning angle of the detection laser emitted by the transmitting module 120 under the control of the control circuit 110 so that the detection laser can scan target objects in the environment. The scanning module 130 is implemented differently in different types of lidars, and some types of lidars may not even have a scanning module, such as a phased array radar in a solid-state lidar. The detection laser emitted by the transmitting module 120 is also reflected by target objects in the environment, generating an echo signal. The receiving module 140 is used to receive the echo signal corresponding to the detection laser under the control of the control circuit 110, convert the echo signal into an electrical signal, and transmit it to the control circuit 110. The control circuit 110 then determines the characteristics of the target object based on the electrical signal. It is understood that the lidar 100 may also include more or fewer components than those shown in FIG. 2 , and this embodiment of the present application is not specifically limited to this.

[0050] The control circuit 110 may include at least one integrated circuit chip, for example, the control circuit 110 may include at least one processor, and when including multiple processors, the types of the processors included may be the same or different. A processor is an element or circuit with processing capabilities, for example, including one or more of the following types: a general-purpose processor, a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a neural-network processing unit (NPU), a graphics processing unit (GPU), an application processor (AP), a modem processor, an image signal processor (ISP), a video codec, a digital signal processor (DSP), a baseband processor, a network processor (NP), a digital signal processing circuit (DSP), a microcontroller unit (MCU), a programmable logic device (PLD) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components or other integrated chips. Among them, a general-purpose processor includes, for example, a central processing unit (CPU). In addition, all or part of the integrated circuit chips included in the control circuit 110 may be integrated together and presented in the form of a system on chip (SoC).

[0051] In one possible embodiment, as shown in FIG2 , the transmitting module 120 may include a driver chip, a switch device, a laser, an energy storage element, and a power supply. The input end of the driver chip is connected to the control circuit 110, the output end of the driver chip is connected to the third end (a3) ​​of the switch device, the first end (a1) of the switch device is connected to the first end (b1) of the laser, the second end (b2) of the laser is respectively connected to the second end (d2) of the energy storage element and the positive electrode of the power supply, and the second end (a2) of the switch device is respectively connected to the first end (d1) of the energy storage element and the negative electrode of the power supply and then grounded (i.e., the inverted triangle mark in FIG2 ). (a device, grounding may refer to connecting a component to the ground through a conductor, or setting up a ground circuit and connecting the component to the ground circuit, without specific limitation). The driver chip may be a chip that can drive the switching device to turn on or off, which can usually be achieved by integrating multiple driver devices into an electronic chip. The switching device may be any device that can turn on and off, such as a field-effect transistor (FET), which may be an N-channel metal-oxide-semiconductor switching device (NMOSFET) or a P-channel metal-oxide-semiconductor switching device (PMOSFET), without specific limitation. The laser can be a single laser, a laser chain formed by multiple lasers connected in series, a laser ring formed by multiple lasers connected in parallel, or a laser array formed by multiple lasers connected in series and in parallel. The laser type can be an edge emitting laser (EEL) or a surface emitting laser (SEL). The energy storage element can be an element that can store electrical energy, such as a capacitor (such as a silicon capacitor) or an inductor.

[0052] Using the above embodiment, when controlling the operation of the transmitting module 120, the control circuit 110 can issue periodically recurring pulse control signals. For example, during the first period of a cycle, the control circuit 110 issues a first control signal for turning off the switching device, and during the second period of the cycle, the control circuit 110 issues a second control signal for turning on the switching device. Thus, during the first period of the cycle, the driver chip drives the first terminal a1 and the second terminal a2 of the switching device to disconnect according to the first control signal. At this time, the electrical energy output by the power supply is provided to the energy storage element instead of to the laser, allowing the energy storage element to store the electrical energy output by the power supply. Subsequently, during the second period of the cycle, the driver chip drives the first terminal a1 and the second terminal a2 of the switching device to connect according to the second control signal. At this time, the energy storage element, which had stored energy in the previous period, begins to discharge. This discharge generates a transient current i in the circuit formed by the laser, the switching device, and the energy storage element. This transient current i drives the laser to emit a detection laser. The greater the value of the transient current i, the greater the laser's emitted optical power P. Thus, under the periodically repeated pulse control signal of the control circuit 110 , the laser in the emission module 120 will also emit light periodically accordingly.

[0053] In the embodiment of the present application, there are many possible ways to connect the various components in the transmission module 120. For example, assuming that the switching device is an NMOS tube, the driver chip is a driver integrated circuit chip (DIC), the laser is a single laser (LR), and the energy storage element is a capacitor C, Figure 3A exemplarily shows a schematic diagram of the component connection structure of a transmission module provided in an embodiment of the present application.

[0054] In one example, as shown in FIG3A (a), the first terminal a1 of the switching device refers to the drain of the NMOS transistor, the second terminal a2 of the switching device refers to the source of the NMOS transistor, the third terminal a3 of the switching device refers to the gate of the NMOS transistor, the first terminal b1 of the laser refers to the cathode of the laser LR, and the second terminal b2 of the laser refers to the anode of the laser LR. The specific connection method is as follows: the output terminal of the driver chip DIC is connected to the gate a3 of the NMOS transistor, the drain a1 of the NMOS transistor is connected to the cathode b1 of the laser LR, the anode b2 of the laser LR is respectively connected to the second terminal d2 of the capacitor C and the positive electrode of the power supply, and the source a2 of the NMOS transistor is respectively connected to the first terminal d1 of the capacitor C and the negative electrode of the power supply and then grounded. According to this circuit connection structure, in the process of controlling the operation of the emission module 120, the control circuit 110 can output a low-level first control signal to the driver chip DIC in the first period of a cycle, and output a high-level second control signal to the driver chip DIC in the second period of the cycle. In this way, in the first period of the cycle: the driver chip DIC drives the source a2 and drain a1 of the NMOSFET to be disconnected according to the low level. In this case, the power output by the power supply V cannot be provided to the laser LR, but can be provided to the capacitor C, thereby charging the capacitor C. At this time, since the link where the laser LR is located is disconnected, the laser LR does not emit a detection laser. Thereafter, in the second period of the cycle: the driver chip DIC drives the source a2 and drain a1 of the NMOSFET to be connected according to the high level. In this case, the link where the laser LR is located is conductive, and the capacitor C can discharge to the laser LR, so that the laser LR can emit a detection laser.

[0055] In another example, as shown in FIG3A(b), the first terminal a1 of the switching device refers to the source of the NMOS transistor, the second terminal a2 of the switching device refers to the drain of the NMOS transistor, the third terminal a3 of the switching device refers to the gate of the NMOS transistor, the first terminal b1 of the laser refers to the anode of the laser LR, and the second terminal b2 of the laser refers to the cathode of the laser LR. Specifically, the connection method is as follows: the output terminal of the driver chip DIC is connected to the gate a3 of the NMOS transistor, the source a1 of the NMOS transistor is connected to the cathode b1 of the laser LR, the anode b2 of the laser LR is connected to the second terminal d2 of the capacitor C and the negative electrode of the power supply, and then to ground, and the drain a2 of the NMOS transistor is connected to the first terminal d1 of the capacitor C and the positive electrode of the power supply. The working process of the circuit connection structure shown in (b) of FIG3A and the circuit connection structure shown in (a) of FIG3A are similar. The reason is that the capacitor C is actually formed by two insulated conductors close to each other. In the circuit connection structure shown in (a) of FIG3A, when the capacitor C is charged in the previous period, the conductor constituting the second end d2 thereof is positively charged and the conductor constituting the first end d1 thereof is negatively charged. Therefore, when discharging in the next period, the electric energy output by the conductor constituting the second end d2 of the capacitor C flows through the anode b2 of the laser LR, the cathode b1 of the laser LR, the drain a1 of the NMOS tube, and the NMOS tube in sequence. The electric energy flows from the source a2 of the NMOS tube back to the conductor constituting the first end d1 of the capacitor C, driving the laser LR to emit light. Similarly, in the circuit connection structure shown in (b) of FIG3A , when the capacitor C is charged in the previous period, the conductor constituting its first end d1 is positively charged and the conductor constituting its second end d2 is negatively charged. Therefore, when discharging in the next period, the electric energy output by the conductor constituting the first end d1 of the capacitor C flows through the drain a2 of the NMOS tube, the source a1 of the NMOS tube, the anode b1 of the laser LR, and the cathode b2 of the laser LR in sequence, and then flows back to the conductor constituting the second end d2 of the capacitor C, driving the laser LR to emit light.

[0056] The above content is only an illustrative introduction to two possible component connection methods in the transmission module 120. In actual operation, some modifications can be made to the connection methods shown above. As long as they do not affect the transmission function of the transmission module 120, they are all within the protection scope of the embodiments of the present application. The embodiments of the present application do not make specific limitations on this.

[0057] In addition, some modifications can be made to the components included in the emission module 120, for example, some components in the emission module 120 can be modified to other components that can achieve the same function, such as replacing the above-mentioned NMOS tube with a diode or a PMOS tube. When replaced with a PMOS tube, the PMOS tube is turned on at a low level and disconnected at a high level. Therefore, if the control circuit still sends a low-level first control signal in the first period of a cycle and sends a high-level second control signal in the second period of the cycle, the laser will emit a detection laser in the first period of the cycle and not emit a detection laser in the second period of the cycle. For another example, some components can be added or deleted in the emission module 120. In one possible example, as shown in (a) or (b) in Figure 3B, the emission module 120 can also include a resistor element R, which is connected in series with the power supply V. For example, in one example, as shown in FIG3B (a), the first end of the resistor element R is connected to the positive electrode of the power supply V, and the second end of the resistor element R is connected to the anode b2 of the laser LR and the second end d2 of the capacitor C. Alternatively, the first end of the resistor element R is connected to the negative electrode of the power supply V, and the second end of the resistor element R is connected to the source a2 of the NMOS transistor and the first end d1 of the capacitor C, and then is grounded. Alternatively, in another example, as shown in FIG3B (b), the first end of the resistor element R is connected to the positive electrode of the power supply V, and the second end of the resistor element R is connected to the drain a2 of the NMOS transistor and the first end d1 of the capacitor C. Alternatively, the first end of the resistor element R is connected to the negative electrode of the power supply V, and the second end of the resistor element R is connected to the cathode b2 of the laser LR and the second end d2 of the capacitor C, and then is grounded. The working process of this circuit connection structure refers to the circuit connection structure shown in (a) or (b) in Figure 3A above, with the difference being that: in the first period of a cycle, part of the electric energy output by the power supply V is consumed by the resistor element R, and the other part is provided to the capacitor C, that is, after charging is completed, the electric energy stored in the capacitor C is less than that in the structure shown in (a) or (b) in Figure 3A; in the second period of the cycle, the capacitor C, the resistor R and the laser LR form a loop, so the current in the loop is lower than that in the loop formed by only the capacitor C and the laser LR as shown in (a) or (b) in Figure 3A, so the intensity of the detection laser emitted by the laser LR is weaker than that in the structure shown in (a) or (b) in Figure 3A. In addition, if you want to flexibly adjust the intensity of the detection laser, the resistance element R can also be set as a variable resistor. When a weaker detection laser is required, the resistance value of the variable resistor is set to be larger. When a stronger detection laser is required, the resistance value of the variable resistor is set to be smaller.

[0058] Furthermore, in combination with Figure 2, Figure 4 shows a schematic diagram of a layout of components in a transmitting module, wherein Figure 4 (a) shows a main view of the layout of components in the transmitting module, and Figure 4 (b) shows a top view of the layout of components in the transmitting module. As shown in Figure 4 (a) and Figure 4 (b), a PCB single board is provided in this layout, and the driver chip, switching device, laser, energy storage element and power supply in the transmitting module 120 are individually packaged into packages, and then planarly laid out on the PCB single board, and each package is connected through the wiring on the PCB. In the case of a local circuit structure, the number of packages and wiring contained in the circuit structure will introduce parasitics (such as parasitic resistance and parasitic inductance) into the circuit structure, and the introduced parasitics will be connected in series on the link where the laser is located. Assuming that the parasitic resistance is R, the parasitic inductance is L, and the output power of the power supply is P out , the photoelectric conversion efficiency is η. From the working principle of the emission module introduced above, it can be seen that the transient current i is formed by the discharge of the energy storage element after the switch device is turned on. As the parasitic inductance L and parasitic resistance R in series on the link where the laser is located decrease, the transient current i will increase accordingly, thereby increasing the laser's emitted optical power P. That is, the laser's emitted optical power P is approximately proportional to the transient current i, and the transient current i is approximately proportional to 1 / LR. Therefore, the laser's emitted optical power P can be understood as being approximately proportional to 1 / LR. In this way, at the same power supply output power P out Under this condition, the electro-optical conversion efficiency η can be defined as the ratio of the laser's emitted light power P to the power supply output power P. out The ratio of η = P / P out Since P is approximately proportional to 1 / LR, the electro-optical conversion efficiency η can be approximately proportional to 1 / LR. In summary, reducing the parasitic inductance L and parasitic resistance R can improve the electro-optical conversion efficiency η in the transmitting module.

[0059] However, the more packages included in the circuit structure and the longer the trace length, the greater the parasitic inductance and parasitic resistance parameters introduced into the circuit structure. In the above layout, individually encapsulating each component will result in a large number of packages in the transmitting module, and the planar layout between the individual packages will make the traces on the PCB more convoluted. The large number of packages and the convoluted traces will introduce greater parasitic inductance and parasitic resistance into the transmitting module, thereby reducing the optical power of the detection laser emitted by the laser. It can be seen that the above layout reduces the efficiency of the transmitting module in converting electrical energy into light energy, which is not conducive to improving the electro-optical conversion efficiency of the transmitting module.

[0060] In view of this, an embodiment of the present application provides an integrated device for reducing parasitics introduced into the structure of the integrated device to improve the effective energy conversion efficiency of the integrated device. For example, when the integrated device is an integration of a laser and a capacitor in an emission module, the electro-optical conversion efficiency of the emission module is improved by reducing the parasitics introduced by the emission module.

[0061] The specific implementation of the integrated device provided in the embodiments of the present application is described below through specific examples.

[0062] Figure 5 is a schematic diagram of the structure of an integrated device provided in an embodiment of the present application. The integrated device includes: a substrate having at least two alternating and stacked etching layers; a laser LR located on the substrate; and at least one filling structure disposed on a side of the substrate away from the laser LR. The filling structure includes an insulating layer and a first metal layer, and the height of the filling structure is less than the thickness of the substrate.

[0063] The at least two etching layers may include two or more etching layers, and the etching layer may refer to a dielectric layer capable of forming a through hole or a groove by etching or photolithography. The at least one filling structure may include one or more filling structures. The filling structure may be embedded in the side of the substrate away from the laser LR, and the height of the portion of the filling structure embedded in the substrate is less than the thickness of the substrate, that is, the filling structure does not penetrate the substrate.

[0064] In addition, the laser LR may be a laser diode. Alternatively, the laser LR may be a laser capable of emitting laser light of different wavelengths, for example, 905 nanometers (nm). In one example, the laser LR includes an anode and a cathode, wherein the anode is embedded in the substrate and does not penetrate the substrate.

[0065] Furthermore, the insulating layer can be located between the substrate and the first metal layer and arranged in contact with the first metal layer. In this case, the substrate and the filling structure can constitute a capacitor C. In other words, the laser LR and the capacitor C can share the same substrate and be respectively arranged on opposite sides of the substrate. Optionally, the substrate can be a wafer.

[0066] Optionally, the radial widths of the filling structure in the at least two etched layers are different. In this way, when the substrate and the filling structure form the capacitor C, the capacitor C can have a larger specific surface area, where the specific surface area refers to the total surface area per unit mass of a substance.

[0067] In the integrated device provided by the embodiment of the present application, by arranging the laser LR and the capacitor C on the same substrate, the distance between the laser LR and the capacitor C can be reduced by a three-dimensional layout, and the interconnection between the laser LD and the capacitor C can be achieved at the same time, thereby eliminating the need to arrange additional interconnection traces between the laser LD and the capacitor, thereby greatly reducing the parasitics (such as parasitic inductance and parasitic resistance) introduced into the structure of the integrated device, thereby improving the effective energy conversion efficiency of the integrated device. The above-mentioned substrate has at least two etched layers arranged alternately and stacked, so that the radial width of at least one filling structure arranged in the substrate can be different in different etched layers, so as to increase the specific surface area of ​​the capacitor C, thereby facilitating heat dissipation and reducing heat loss.

[0068] Optionally, the at least two etching layers have different etching selectivity materials. In one possible example, the at least two etching layers have two etching selectivity materials, and specifically may include: an aluminum gallium arsenide AlGaAs layer, and a gallium arsenide GaAs layer. That is, the substrate includes stacked and alternating AlGaAs layers and GaAs layers. In practical applications, the materials of the at least two etching layers in this application may also be other materials. The embodiments of this application are described only by taking the materials including AlGaAs and GaAs as an example, and do not constitute a limitation to the embodiments of this application.

[0069] When the two etched layers include an AlGaAs layer and a GaAs layer, the lattice constant of the AlGaAs layer is different from that of the GaAs layer, and the lattice constant of the AlGaAs layer is smaller than that of the GaAs layer. Consequently, the AlGaAs layer and the GaAs layer are subjected to compressive strain in the xy directions (i.e., directions parallel to and perpendicular to the etched layers) and tensile strain in the z direction (i.e., a direction perpendicular to the etched layers). This results in electrons in the AlGaAs layer and the GaAs layer having greater mobility and correspondingly lower resistivity, thereby significantly reducing the parasitic resistance of the integrated device and improving the performance of the integrated device. Furthermore, due to the excellent electrical conductivity of AlGaAs, the use of an AlGaAs layer can further reduce the resistance of the AlGaAs layer itself, thereby further improving the performance of the integrated device.

[0070] Optionally, when the at least two etching layers include an AlGaAs layer and a GaAs layer, the GaAs layer may be the etching layer closest to the laser among the at least two etching layers. In addition, the thickness of the AlGaAs layer and the thickness of the GaAs layer may be the same or different. In one example, as shown in FIG5 , the thickness of the AlGaAs layer and the thickness of the GaAs layer are the same.

[0071] In the above embodiment, the etching resistance of the AlGaAs layer can be greater than that of the GaAs layer. Accordingly, the radial width of the filling structure in the AlGaAs layer can be greater than the radial width of the filling structure in the GaAs layer, so that the filling structure has different radial widths in the stacked and alternating AlGaAs layers and GaAs layers.

[0072] In one possible embodiment, the portion of the filling structure located in the AlGaAs layer is distributed in a straight line, and the portion of the filling structure located in the GaAs layer is distributed in an arc. By making the portion of the filling structure located in the AlGaAs layer distributed in a straight line and the portion located in the GaAs layer distributed in an arc, the filling structure can have a larger surface area, thereby increasing the specific surface area of ​​the capacitor C, thereby facilitating heat dissipation and reducing heat loss.

[0073] Optionally, the at least one filling structure includes a plurality of filling structures. In a possible embodiment, the distance between any two adjacent filling structures in the plurality of filling structures may be the same or different, and FIG5 is taken as an example in which the distance between any two adjacent filling structures is the same.

[0074] Furthermore, the multiple filling structures may be in the shape of comb teeth. The heights of at least two comb teeth in the multiple filling structures may be the same or different. The height of each comb tooth here may refer to the height of the comb tooth extending into the interior of the substrate. In one example, as shown in FIG5 , the heights of the multiple filling structures are all the same. Alternatively, in another example, as shown in FIG6 , the heights of some comb teeth in the multiple filling structures are different from the heights of other comb teeth. When there are comb teeth of different heights in the multiple filling structures, the arrangement of the comb teeth of different heights may be random or may be arranged in a certain order (for example, from low to high, from high to low, or high-low-high-low), and the embodiments of the present application do not impose specific restrictions on this.

[0075] Optionally, when the multiple filling structures are in a comb-teeth shape, the insulating layers in the multiple filling structures can be connected together and in a "bow" shape, and the first metal layers in the multiple filling structures can also be connected together and in a comb-teeth shape.

[0076] In an embodiment of the present application, as shown in (a) and (b) of FIG7 , the capacitor C may be a capacitor having a metal-insulator-semiconductor (MIS) structure or a metal-insulator-metal (MIM) structure. When the capacitor C is a MIS structure, it may include the substrate, the insulating layer, and the first metal layer; in this case, the substrate may be a heavily doped substrate, for example, the substrate includes heavily doped AlGaAs and heavily doped gallium arsenide GaAs stacked and alternately arranged, and the heavily doped substrate may also be referred to as a low-resistivity substrate. When the capacitor C is a MIM structure, in addition to the substrate, the insulating layer, and the first metal layer, it may also include another metal layer; in this case, the substrate may be a lightly doped or undoped substrate, and the lightly doped or undoped substrate may also be referred to as a high-resistivity substrate.

[0077] When the substrate is a high-resistivity substrate, in one possible embodiment, as shown in FIG8 , the filling structure further includes a second metal layer, and the second metal layer is located between the substrate and the insulating layer. The second metal layer may also be in the shape of a bow. Optionally, the second metal layer may be formed before the insulating layer. For example, after a groove is etched on the side of the substrate away from the laser LR, the second metal layer may be formed by depositing a metal material on the side surface of the substrate having the groove, and then the insulating layer may be formed on the second metal layer by depositing an insulating material.

[0078] In the integrated device provided in the embodiment of the present application, the capacitor C of the MIS structure can be realized by a high-resistivity substrate, an insulating layer and a first metal layer, and the capacitor C of the MIM structure can be realized by a low-resistivity substrate, a second metal layer, an insulating layer and a first metal layer, thereby improving the flexibility and diversity of the capacitor C in the integrated device during specific implementation.

[0079] Based on this, an embodiment of the present application further provides an integrated circuit, which includes: the integrated device provided above and a switching device, wherein the switching device is coupled to the integrated device.

[0080] An embodiment of the present application also provides an emission module, which may include a power supply, a driver chip and the integrated device provided above; wherein the power supply is used to supply power to the integrated device, the driver chip is used to send a drive signal to the integrated device, and the integrated device is used to send a detection laser according to the drive signal.

[0081] An embodiment of the present application also provides a detection device, which may include a control circuit and the emission module provided above, the control circuit is used to send a control signal to the emission module, and the emission module is used to emit a detection laser according to the control signal.

[0082] In a possible embodiment, the detection device may further include a receiving module, which is used to receive the echo signal returned after the detection laser scans the target object and convert the echo signal into an electrical signal. The control circuit is also used to process the electrical signal to obtain point cloud data.

[0083] In another possible embodiment, the detection device may further include a scanning module, which is used to use the detection laser to traverse and scan the target object.

[0084] Optionally, the detection device may be a laser radar or other device capable of emitting a detection laser. Examples of detection devices include, but are not limited to, vehicle-mounted laser radars, household robot vacuum laser sensors, dock laser detection modules, laser printers, and the like.

[0085] The present application also provides a terminal including the detection device described above. Optionally, the terminal includes, but is not limited to: smart home devices (such as televisions, robot vacuums, smart desk lamps, audio systems, smart lighting systems, appliance control systems, home background music, home theater systems, intercom systems, video surveillance, etc.), smart transportation equipment (such as cars, ships, drones, trains, vans, trucks and other vehicles), smart manufacturing equipment (such as robots, industrial equipment, smart logistics, smart factories, etc.), smart terminals (mobile phones, computers, tablets, PDAs, desktops, headphones, audio equipment, wearable devices, vehicle-mounted devices, virtual reality devices, augmented reality devices, etc.).

[0086] Figure 9 is a flow chart of a method for manufacturing an integrated device provided in an embodiment of the present application. The integrated device may be the integrated device provided above. The method includes the following steps. Figure 10 is a cross-sectional view of the integrated device during the manufacturing process.

[0087] S301: forming a substrate having at least two etched layers arranged alternately and stacked, as shown in FIG10(a).

[0088] The at least two etching layers may include two or more etching layers, and the etching layer may refer to a dielectric layer capable of forming a through hole or a groove by etching or photolithography. The at least one filling structure may include one or more filling structures. The filling structure may be embedded in the side of the substrate away from the laser LR, and the height of the portion of the filling structure embedded in the substrate is less than the thickness of the substrate, that is, the filling structure does not penetrate the substrate.

[0089] In addition, the laser LR may be a laser diode. Optionally, the laser LR may be a laser capable of emitting lasers of different wavelengths, for example, the wavelength may be 905 nanometers (nm).

[0090] Furthermore, the insulating layer can be located between the substrate and the first metal layer and arranged in contact with the first metal layer. In this case, the substrate and the filling structure can constitute a capacitor C. In other words, the laser LR and the capacitor C can share the same substrate and be respectively arranged on opposite sides of the substrate. Optionally, the substrate can be a wafer.

[0091] Optionally, the at least two etching layers comprise materials with different etch selectivities. In one possible example, the at least two etching layers comprise two etch selectivities, and specifically may comprise: an aluminum gallium arsenide (AlGaAs) layer and a gallium arsenide (GaAs) layer. That is, the substrate comprises stacked and alternating AlGaAs and GaAs layers. In practical applications, the materials of the at least two etching layers in this application may also be other materials. The embodiments of this application are described using the example of AlGaAs and GaAs as examples, and do not constitute a limitation to the embodiments of this application.

[0092] In a possible embodiment, the at least two etching layers include an AlGaAs layer and a GaAs layer; accordingly, forming the substrate may specifically include: alternately forming the AlGaAs layer and the GaAs layer to form a substrate having an alternating and stacked AlGaAs layer and a GaAs layer.

[0093] S302: forming a laser on the substrate, as shown in FIG10(b).

[0094] Optionally, when the at least two etching layers include an AlGaAs layer and a GaAs layer, the GaAs layer may be the etching layer closest to the laser among the at least two etching layers. In addition, the thickness of the AlGaAs layer and the thickness of the GaAs layer may be the same or different.

[0095] In one possible embodiment, the last layer of the alternating and stacked AlGaAs layers and GaAs layers is a GaAs layer, and forming a laser on the substrate may specifically include forming the laser on the GaAs layer of the substrate. For example, the laser LR includes an anode and a cathode, the cathode being formed on the GaAs layer of the substrate, and the anode being embedded in the substrate, and the anode not penetrating the substrate.

[0096] S303: forming at least one filling structure on a side of the substrate away from the laser, the filling structure comprising an insulating layer and a first metal layer, and a height of the filling structure being less than a thickness of the substrate.

[0097] In the above embodiment, the etching resistance of the AlGaAs layer can be greater than that of the GaAs layer. Accordingly, the radial width of the filling structure in the AlGaAs layer can be greater than the radial width of the filling structure in the GaAs layer, so that the filling structure has different radial widths in the stacked and alternating AlGaAs layers and GaAs layers.

[0098] In a possible embodiment, a portion of the filling structure located in the AlGaAs layer is distributed in a straight line, and a portion of the filling structure located in the GaAs layer is distributed in an arc line.

[0099] Optionally, the at least one filling structure includes a plurality of filling structures. In a possible embodiment, the distance between any two adjacent filling structures in the plurality of filling structures may be the same or different.

[0100] Furthermore, the multiple filling structures may be in the shape of comb teeth. The heights of at least two comb teeth in the multiple filling structures may be the same or different. The height of each comb tooth here may refer to the height of the comb tooth extending into the interior of the substrate. In one example, the heights of the multiple filling structures are all the same. Alternatively, in another example, the heights of some comb teeth in the multiple filling structures are different from the heights of other comb teeth. When there are comb teeth of different heights in the multiple filling structures, the arrangement of the comb teeth of different heights may be random or may be arranged in a certain order (for example, from low to high, from high to low, or high-low-high-low), and the embodiments of the present application do not impose specific restrictions on this.

[0101] Optionally, when the multiple filling structures are in a comb-teeth shape, the insulating layers in the multiple filling structures can be connected together and in a "bow" shape, and the first metal layers in the multiple filling structures can also be connected together and in a comb-teeth shape.

[0102] In a possible embodiment, the insulating layer is located between the substrate and the first metal layer. As shown in FIG9 , the above S303 may specifically include: S3031 - S3032.

[0103] S3031: Form at least one groove on a side of the substrate away from the laser, wherein the height of the groove is less than the thickness of the substrate, as shown in FIG10(c).

[0104] The at least one groove may include a plurality of grooves, and the distance between any two adjacent grooves in the plurality of grooves may be the same or different. In addition, at least two grooves in the plurality of grooves may have the same or different heights. For example, the heights of the plurality of grooves are all the same, or the heights of some grooves in the plurality of grooves are different from the heights of the other grooves. FIG10 illustrates the case where the distance between any two adjacent grooves is the same, and the plurality of grooves have the same height.

[0105] In a possible embodiment, the present application may form at least one groove on a side of the substrate away from the laser through processes such as photolithography or etching.

[0106] S3032: forming the insulating layer on the surface of the substrate having the at least one groove, and forming a first metal layer on the insulating layer to obtain the at least one filling structure, as shown in (d) and (e) of FIG10 .

[0107] In one possible embodiment, an insulating layer is formed on the surface of the substrate having the at least one groove by a process such as depositing or depositing an insulating material, wherein the thickness of the insulating layer is less than half of the radial width of the groove; thereafter, a first metal layer can be formed on the insulating layer by a process such as depositing or depositing a metal material, wherein the sum of the thickness of the insulating layer and the thickness of the first metal layer can be equal to half of the radial width of the groove.

[0108] The above-mentioned capacitor C can be a capacitor of MIS structure or a capacitor of MIM structure. When the capacitor C is of MIS structure, it can include the substrate, the insulating layer and the first metal layer; in this case, the substrate can be a heavily doped substrate, which can also be called a low-resistivity substrate. When the capacitor C is of MIM structure, in addition to the substrate, the insulating layer and the first metal layer, it can also include another metal layer; in this case, the substrate can be a lightly doped or undoped substrate, which can also be called a high-resistivity substrate.

[0109] Furthermore, the substrate is a high-resistivity substrate, and the capacitor further includes a second metal layer, wherein the second metal layer is located between the substrate and the insulating layer. In this case, as shown in FIG11 , the above-mentioned S3032 may specifically include: S30321 - S30322.

[0110] S30321: forming a second metal layer on the surface of the substrate having the plurality of grooves, as shown in FIG10(f).

[0111] In a possible embodiment, a second metal layer is formed on the surface of the substrate having the at least one groove by depositing or depositing a metal material, wherein the thickness of the second metal layer is less than half of the radial width of the groove.

[0112] S30322: An insulating layer is formed on the second metal layer, and a first metal layer is formed on the insulating layer, as shown in (g) and (h) in FIG10 .

[0113] In one possible embodiment, an insulating layer is formed on the second metal layer by a process such as depositing or depositing an insulating material, wherein the sum of the thickness of the insulating layer and the thickness of the second metal layer is less than half of the radial width of the groove; thereafter, a first metal layer can be formed on the insulating layer by a process such as depositing or depositing a metal material, wherein the sum of the thickness of the second metal layer, the thickness of the insulating layer and the thickness of the first metal layer is equal to half of the radial width of the groove.

[0114] In the manufacturing method of the integrated device provided in the embodiment of the present application, by arranging the laser LR and the capacitor C on the same substrate, the distance between the laser LR and the capacitor C can be reduced by a three-dimensional layout, and the interconnection between the laser LD and the capacitor C can be achieved at the same time, thereby eliminating the need to set additional interconnection lines between the laser LD and the capacitor, thereby greatly reducing the parasitics (such as parasitic inductance and parasitic resistance) introduced in the structure of the integrated device, thereby improving the effective energy conversion efficiency of the integrated device. The above-mentioned substrate has at least two etched layers arranged alternately and stacked, so that the radial width of at least one filling structure arranged in the substrate can be different in different etched layers, so as to increase the specific surface area of ​​the capacitor C, thereby facilitating heat dissipation and reducing heat loss.

[0115] According to the manufacturing method provided in the embodiment of the present application, the embodiment of the present application also provides a computer-readable storage medium, which stores a computer program. When the computer program is run, the manufacturing method introduced in the above content is executed.

[0116] According to the manufacturing method provided in the embodiment of the present application, the embodiment of the present application also provides a computer program product, which implements the manufacturing method introduced in the above content when the computer program product runs on a processor.

[0117] Finally, it should be noted that the above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An integrated device, characterized in that: The integrated device comprises: A substrate having at least two etched layers arranged alternately and stacked; a laser located on the substrate; At least one filling structure is provided on a side of the substrate away from the laser. The filling structure includes an insulating layer and a first metal layer. The height of the filling structure is less than the thickness of the substrate.

2. The integrated device according to claim 1, characterized in that The filling structure has different radial widths in the at least two etching layers.

3. The integrated device according to claim 1 or 2, characterized in that The at least two etching layers have materials with different etching selectivities.

4. The integrated device according to claim 3, characterized in that The at least two etching layers include: an aluminum gallium arsenide AlGaAs layer and a gallium arsenide GaAs layer.

5. The integrated device according to claim 4, characterized in that The GaAs layer is the etching layer closest to the laser among the at least two etching layers.

6. The integrated device according to claim 4 or 5, characterized in that: The thickness of the AlGaAs layer is the same as the thickness of the GaAs layer.

7. The integrated device according to any one of claims 4 to 6, characterized in that: The etching resistance of the AlGaAs layer is greater than that of the GaAs layer.

8. The integrated device according to any one of claims 4 to 7, characterized in that: The radial width of the filling structure in the AlGaAs layer is greater than the radial width of the filling structure in the GaAs layer.

9. The integrated device according to any one of claims 4 to 8, characterized in that: The portion of the filling structure located in the AlGaAs layer is distributed in a straight line, and the portion of the filling structure located in the GaAs layer is distributed in an arc line.

10. The integrated device according to any one of claims 1 to 9, characterized in that: The insulating layer is located between the substrate and the first metal layer and is arranged in contact with the first metal layer.

11. The integrated device according to any one of claims 1 to 10, characterized in that: The filling structure further includes a second metal layer located between the substrate and the insulating layer.

12. The integrated device according to any one of claims 1 to 11, characterized in that: The at least one filling structure includes a plurality of filling structures.

13. The integrated device according to claim 12, characterized in that The multiple filling structures are in a comb-teeth shape.

14. A method for manufacturing an integrated device, characterized in that: The method comprises: forming a substrate having at least two etched layers arranged alternately and stacked; forming a laser on the substrate; At least one filling structure is formed on a side of the substrate away from the laser. The filling structure includes an insulating layer and a first metal layer. The height of the filling structure is smaller than the thickness of the substrate.

15. The manufacturing method according to claim 14, characterized in that: The filling structure has different radial widths in the at least two etching layers.

16. The production method according to claim 14 or 15, characterized in that: The at least two etching layers have materials with different etching selectivities.

17. The manufacturing method according to claim 16, characterized in that: The at least two etching layers include: an aluminum gallium arsenide AlGaAs layer and a gallium arsenide GaAs layer; The forming of the substrate includes: alternately forming the AlGaAs layer and the GaAs layer to form a substrate having the AlGaAs layer and the GaAs layer arranged alternately and stacked.

18. The manufacturing method according to claim 17, characterized in that: The last layer of the AlGaAs layers and the GaAs layers arranged alternately and stacked is the GaAs layer, and the laser is formed on the substrate, comprising: The laser is formed on the GaAs layer of the substrate.

19. The production method according to claim 17 or 18, characterized in that: The thickness of the AlGaAs layer is the same as the thickness of the GaAs layer.

20. The production method according to any one of claims 17 to 19, characterized in that: The radial width of the filling structure in the AlGaAs layer is greater than the radial width of the filling structure in the GaAs layer.

21. The production method according to any one of claims 17 to 20, characterized in that: The portion of the filling structure located in the AlGaAs layer is distributed in a straight line, and the portion of the filling structure located in the GaAs layer is distributed in an arc line.

22. The production method according to any one of claims 14 to 21, characterized in that: The insulating layer is located between the substrate and the first metal layer, and at least one filling structure is formed on a side of the substrate away from the laser, including: Etching a side of the substrate away from the laser to form at least one groove, wherein the height of the groove is smaller than the thickness of the substrate; forming the insulating layer on the surface of the substrate having the at least one groove, wherein the thickness of the insulating layer is less than half of the radial width of the groove; The first metal layer is formed on the insulating layer to obtain the at least one filling structure.

23. The manufacturing method according to claim 22, characterized in that: The filling structure further includes a second metal layer, the second metal layer is located between the substrate and the insulating layer, and forming the insulating layer on the surface of the substrate having the at least one groove includes: forming a second metal layer on the surface of the substrate having the at least one groove; The insulating layer is formed on the second metal layer, and the sum of the thickness of the second metal layer and the thickness of the insulating layer is less than half of the radial width of the groove.

24. The production method according to any one of claims 14 to 23, characterized in that: The at least one filling structure includes a plurality of filling structures.

25. The manufacturing method according to claim 24, characterized in that: The multiple filling structures are in a comb-teeth shape.

26. A detection device, characterized in that: The detection device comprises an integrated device according to any one of claims 1-13.

27. A terminal, characterized in that: The terminal includes: an integrated device according to any one of claims 1-13.

28. The terminal according to claim 27, characterized in that The terminal is a vehicle.

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