Magnetic infrared radiation heat dissipation MnSe2 material, infrared radiation composite film and preparation method of magnetic infrared radiation heat dissipation MnSe2 material

Abstract

The invention discloses a magnetic infrared radiation heat dissipation material MnSe2, and a preparation method of the magnetic infrared radiation heat dissipation material MnSe2 comprises the following steps: 1) uniformly mixing manganese powder and selenium powder in proportion, and tabletting the obtained mixed powder to obtain a primary block 2) melting and quenching the obtained primary block under a vacuum condition; 3) grinding the quenched casting body, and tabletting to obtain a secondary block body; and 4) carrying out step-by-step melting annealing on the obtained secondary block under a vacuum condition, and then grinding to obtain the magnetic infrared radiation heat dissipation material MnSe2. Manganese powder and selenium powder are used as main raw materials, the melting quenching process and the step-by-step melting annealing process are combined, the infrared emissivity of the obtained MnSe2 material is promoted to be improved, and particularly, the high emissivity can be shown in the middle infrared band and the far infrared band; when the material is applied to preparation of a MnSe2 composite film, a good radiation refrigeration effect can be achieved, and the material has a good application prospect in the fields of thermal management of microelectronic devices and the like.

Description

Technical Field

[0001] The invention belongs to the technical field of functional materials, and specifically relates to a magnetic infrared radiation heat dissipation MnSe2 material, an infrared radiation composite film and a preparation method thereof. Background Art

[0002] With the rapid development of electronic technology-related industries, electronic equipment has gradually shifted towards miniaturization, integration and high efficiency. However, this trend has also brought about increasingly severe thermal management issues. Electronic equipment generates a lot of heat during operation. If the heat cannot be dissipated in time, it will not only affect the normal operation of the equipment, but may even bring safety hazards. Studies have shown that for every 10°C increase in ambient temperature, the reliability of electronic devices will decrease by 50%, and high temperature environments will greatly shorten the service life of devices. Therefore, thermal management of electronic equipment has become a key issue that needs to be urgently solved in the development of electronic technology.

[0003] At present, the heat dissipation methods commonly used in electronic equipment (such as water cooling, air cooling, etc.) generally have problems such as high energy consumption and high cost, and it is difficult to meet the increasingly stringent thermal management requirements. As a new heat dissipation method, infrared radiation heat dissipation technology has the advantages of high efficiency, zero consumption, good reliability, and environmental friendliness, which has attracted widespread attention from researchers.

[0004] Selenium compound semiconductor materials have excellent physical and chemical properties and have broad application prospects in optoelectronic and electromagnetic devices and biomedicine. The research on MnSe2 magnetic semiconductor materials in the field of infrared radiation has attracted attention; however, the existing preparation process of MnSe2 materials has problems such as low yield or inability to take into account the emissivity in the mid-infrared and far-infrared bands, which limits its promotion and application. Summary of the invention

[0005] The main purpose of the present invention is to provide a magnetic infrared radiation heat dissipation MnSe2 material with high infrared emissivity and a MnSe2 composite film prepared using the same, which can show high emissivity in both mid-infrared and far-infrared bands and achieve better radiation cooling effect; and the preparation process involved is simple and the cycle is short, and it has good application prospects in the fields of thermal management of microelectronic devices.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] A method for preparing a magnetic infrared radiation heat dissipation material MnSe2 comprises the following steps:

[0008] 1) mixing manganese powder and selenium powder in proportion to obtain a mixed powder; and then tableting to obtain a primary block;

[0009] 2) melting and quenching the obtained primary block under vacuum conditions;

[0010] 3) grinding the obtained quenched casting and then pressing it into tablets to obtain a secondary block;

[0011] 4) The obtained secondary block is subjected to step-by-step melt annealing under vacuum conditions, and then ground to obtain the magnetic infrared radiation heat dissipation material MnSe2.

[0012] In the above scheme, the manganese powder and selenium powder in step 1) are mixed in a molar ratio of Mn:Se=1:(2-3).

[0013] In the above scheme, the particle size of the Mn powder in step 1) is 100-400 mesh; the particle size of the Se powder is 100-400 mesh.

[0014] In the above scheme, the pressure required for tableting the mixed powder in step 1) is 30-50 MPa.

[0015] In the above scheme, the vacuum degree of the vacuum condition in step 2) is 10 -2 Below Pa.

[0016] In the above scheme, the reaction temperature used in the melting step of step 2) is 400-600°C, and the insulation reaction time is 8-12h.

[0017] Furthermore, the melting step specifically includes: first heating from room temperature to 200-220°C at a rate of 2-5°C / min (first heating); then heating to 230-240°C at a rate of 1-3°C / min (second heating); finally, rapidly heating to the insulation temperature at a rate of 3-5°C / min (third heating), and insulation for 8-12 hours.

[0018] Furthermore, the heating rate adopted in the third heating step is greater than that adopted in the second heating step.

[0019] In the above scheme, the pressure used in the tableting step of step 3) is 30-50Mpa.

[0020] In the above scheme, the step 4) of the stepwise melt annealing step comprises: firstly, rapidly heating to 450-550°C at a rate of 3-5°C / min, keeping warm for 48-80h, and naturally cooling to room temperature; then, re-grinding the obtained annealed product, repeating the heating step to raise the temperature to 450-550°C, keeping warm for 12-24h, and then naturally cooling to obtain the annealed product.

[0021] In the above scheme, in step 4), the block obtained by the two annealings is ground to pass through a sieve of not less than 120 meshes.

[0022] The magnetic infrared radiation heat dissipation material MnSe2 prepared according to the above scheme is in the form of spherical particles, and the infrared emissivity can reach 0.87-0.89 in the 3-5μm band and 0.92-0.93 in the 8-14μm band.

[0023] Another object of the present invention is to provide a MnSe2 infrared radiation composite film with low-temperature and high-efficiency radiation heat dissipation function prepared by using the above-mentioned magnetic infrared radiation heat dissipation material MnSe2, which can show good radiation heat dissipation performance at room temperature; the specific preparation method comprises the following steps:

[0024] 1) Mixing the magnetic infrared radiation heat dissipation material MnSe2 and the high infrared radiation polymer solution uniformly to obtain a slurry;

[0025] 2) Cover the slurry on the substrate and dry it to obtain a film sample.

[0026] In the above scheme, the high infrared radiation polymer solution in step 1) includes a polymer matrix with high infrared emissivity and a dispersant; wherein the polymer matrix with high infrared emissivity is selected from at least one of polydimethylsiloxane (PDMS), polyvinylidene fluoride (PVDF), polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP), polymethyl methacrylate (PMMA), and polyimide (PI); and the dispersant is at least one of N-methylpyrrolidone and dimethylformamide.

[0027] In the above scheme, in the high infrared radiation polymer solution, the mass ratio of the polymer matrix with high infrared emissivity to the dispersant is (5-20):(80-95).

[0028] In the above scheme, the mass ratio of the high infrared radiation polymer solution to the magnetic infrared radiation heat dissipation material MnSe2 is (80-95):(5-20).

[0029] In the above scheme, after step 1), magnetic stirring or ultrasonic stirring is used to evenly disperse the MnSe2 powder, and the stirring time is 5-30 minutes.

[0030] In the above scheme, step 2) prepares a thin film on a substrate by spin coating, blade coating, casting, drop coating or screen printing.

[0031] In the above scheme, in step 2), the drying temperature is 70-80° C. and the drying time is 30-60 min.

[0032] The MnSe2 enhanced composite film prepared according to the above scheme has a relatively smooth surface with evenly dispersed MnSe2 particles; its infrared emissivity at 8-13μm is 0.95-0.96, the infrared emissivity at 3-5μm is 0.88-0.90, and the average infrared emissivity at 2.5-15μm is 0.92-0.93.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] 1) The present invention uses manganese powder and selenium powder as main raw materials, combines melt quenching and step melt annealing processes, and promotes the improvement of the infrared emissivity of the obtained sample; by further preparing MnSe2 composite thin film, it can show higher emissivity in both mid-infrared band and far-infrared band, which is better than the thin film samples prepared by traditional hydrothermal method.

[0035] 2) The preparation method of the MnSe2 material described in the present invention is relatively simple, low in cost, and high in yield, and can obtain MnSe2 samples with high infrared emissivity, which is conducive to the large-scale synthesis of MnSe2; in addition, the process for preparing the MnSe2 film is simple, the preparation cycle is short, and it has a good radiation cooling effect, and has good application prospects in the fields of thermal management of microelectronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 The XRD diagram of the powder product obtained in Examples 1-2.

[0037] Figure 2 The SEM images of (a) the powder product obtained in Example 1 and (b) the powder product obtained in Example 2;

[0038] Figure 3 MH curves of (a) the powder product obtained in Example 1 and (b) the powder product obtained in Example 2;

[0039] Figure 4 The infrared spectrum of the thin film products obtained in Example 3 and Comparative Example 1 and Comparative Example 2;

[0040] Figure 5 The temperature variation curves of the thin film products obtained in Example 3 and Comparative Example 1 when attached to electronic components.

[0041] Figure 6 This is the XRD pattern of the powder product obtained in Comparative Example 3. DETAILED DESCRIPTION

[0042] The principles and features of the present invention are described below in conjunction with the accompanying drawings and specific embodiments. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0043] Example 1

[0044] A magnetic infrared radiation heat dissipation material MnSe2, the preparation method of which comprises the following steps:

[0045] 1) First press MnSe 2.2 According to the chemical stoichiometric formula (Se is volatile during high-temperature synthesis, so an excess amount is required in the raw material), 1.4416 g of high-purity Mn powder and 4.5584 g of high-purity Se powder were weighed respectively, and the two powders were added to an agate mortar, fully ground, and evenly mixed; the ground powder was placed in a clean steel tableting mold with a diameter of 16 mm, and tablets were formed at 40 MPa for 10 minutes to obtain a round tablet with a diameter of 16 mm;

[0046] 2) The obtained circular pressed tablet is vacuum sealed in a clean quartz tube (the quartz tube needs to be cleaned with anhydrous ethanol and baked at high temperature, and argon is repeatedly flushed three times during the sealing process to ensure that the air in the quartz tube is completely excluded); then the sealed quartz tube containing the raw materials is placed in a programmable temperature-controlled muffle furnace, and the temperature is increased from room temperature (30°C) to 210°C at a heating rate of 3°C / min; then the temperature is slowly increased to 230°C at a heating rate of 1°C / min, and finally the temperature is quickly increased to 600°C at a heating rate of 5°C / min, and the temperature is kept for 10 hours to allow the starting raw materials to completely melt and react, and then the quartz tube containing the raw materials is quickly taken out of the muffle furnace and quenched in cold water to obtain an irregular quenched casting;

[0047] 3) Grind the obtained casting in an agate mortar, pass through a 120-mesh sieve to obtain a uniform powder, then put it into a tableting mold with a diameter of 16 mm and press it at 40 MPa for 10 min;

[0048] 4) The obtained pressed tablet is vacuum sealed in a clean quartz tube and placed in a programmed temperature-controlled muffle furnace. First, the temperature is increased to 500°C at a rate of 5°C / min and annealed for 72 hours, and then cooled in the furnace; then the obtained annealed sample is re-ground and passed through a 120-mesh sieve to obtain a uniform powder, and the above heating steps are repeated, the temperature is increased to 500°C and annealed for 24 hours, and cooled in the furnace to obtain a sample; the sample is ground and passed through a 120-mesh sieve to obtain a uniform powder product with a particle size of 1-3 μm.

[0049] The XRD and SEM test results of the MnSe2 powder product obtained in this example are shown in Figure 1 and Figure 2 a. Such as Figure 1 The XRD diffraction peak pattern of the obtained sample completely matches the diffraction peak of MnSe2, which is a single MnSe2 phase without other impurity phases. Figure 2 The SEM results in a show that the particles exhibit a spherical structure with small interparticle spaces. The MH curve of the product obtained in this example is as follows: Figure 3As shown in a, at 300K, the MH curve is a straight line through three quadrants, showing paramagnetism. The infrared emissivity of the product obtained in this example in the 3-5μm and 8-14μm bands is shown in Table 1, and the average infrared emissivity reaches 0.884 and 0.928 respectively.

[0050] Example 2

[0051] A magnetic infrared radiation heat dissipation material MnSe2, the preparation method of which comprises the following steps:

[0052] 1) First, MnSe 2.2 According to the chemical stoichiometric formula (Se is volatile during high-temperature synthesis, so an excess amount is required in the raw material), 1.4416 g of high-purity Mn powder and 4.5584 g of high-purity Se powder were weighed respectively, and the two powders were added to an agate mortar, fully ground, and evenly mixed; the ground powder was placed in a clean steel tableting mold with a diameter of 16 mm, and tablets were formed at 40 MPa for 10 minutes to obtain a round tablet with a diameter of 16 mm;

[0053] 2) The obtained circular pressed tablet is vacuum sealed in a clean quartz tube (the quartz tube needs to be cleaned with anhydrous ethanol and baked at high temperature, and argon is repeatedly flushed three times during the sealing process to ensure that the air in the quartz tube is completely excluded); then the sealed quartz tube containing the raw materials is placed in a programmable temperature-controlled muffle furnace, and the temperature is increased from room temperature (30°C) to 210°C at a heating rate of 3°C / min; then the temperature is slowly increased to 230°C at a heating rate of 1°C / min, and finally the temperature is quickly increased to 600°C at a heating rate of 5°C / min, and the temperature is kept for 10 hours to allow the starting raw materials to completely melt and react, and then the quartz tube containing the raw materials is quickly taken out of the muffle furnace and quenched in cold water to obtain an irregular quenched casting;

[0054] 3) Grind the obtained casting in an agate mortar, pass through a 120-mesh sieve to obtain a uniform powder, then put it into a tableting mold with a diameter of 16 mm and press it at 40 MPa for 10 min;

[0055] 4) The obtained pressed tablet is vacuum sealed in a clean quartz tube and placed in a programmed temperature-controlled muffle furnace. The temperature is first increased to 550°C at a rate of 5°C / min and annealed for 72 hours, and then cooled in the furnace; then the obtained annealed sample is re-ground and passed through a 120-mesh sieve, and the above heating steps are repeated, the temperature is increased to 550°C and annealed for 24 hours, and then cooled in the furnace to obtain a sample; the sample is ground and passed through a 120-mesh sieve to obtain a uniform powder product with a particle size of 1-5 μm.

[0056] The XRD and SEM test results of the MnSe2 powder obtained in this example are shown in Figure 1 and Figure 2 b. If Figure 1The XRD diffraction peak pattern of the obtained sample completely matches the diffraction peak of MnSe2, which is a single MnSe2 phase without other impurity phases. Figure 2 The SEM results in b show that the particles are spherical and relatively dispersed. The MH curve of the product obtained in this example is as follows Figure 3 As shown in b, at 300K, the MH curve is a straight line through the first three quadrants, showing paramagnetism. The infrared emissivity of the product obtained in this example in the 3-5μm and 8-14μm bands is shown in Table 1, and the average infrared emissivity reaches 0.882 and 0.927 respectively.

[0057] Example 3

[0058] A MnSe2 composite film with low-temperature and high-efficiency radiation heat dissipation function, the preparation method of which comprises the following steps:

[0059] 1) Weigh 0.5 g of polyvinylidene fluoride and 9.5 g of N-methylpyrrolidone respectively, add them into a clean beaker and stir for 10 hours to obtain a uniform high infrared radiation polymer solution;

[0060] 2) Weigh 0.4 g of the MnSe2 powder obtained in Example 1 and 3.6 g of the high infrared radiation polymer solution, add them into a clean beaker and stir them magnetically for 10 min to obtain a mixed slurry;

[0061] 3) The mixed slurry was coated on a clean copper plate by drop coating, placed in a drying oven, and dried at 70° C. for 40 min to obtain a thin film.

[0062] The spectrum results of the radiative heat dissipation film obtained in this embodiment in the infrared band are shown in Figure 4 Calculations show that the average infrared emissivity of the radiant heat dissipation film prepared in this embodiment in the 8-13 μm atmospheric window is 0.959, the average infrared emissivity in the 3-5 μm atmospheric window is 0.894, the highest emissivity can reach 0.947, and the average infrared emissivity in the 2.5-15 μm atmospheric window is 0.939.

[0063] The radiant heat dissipation film prepared in this example (referred to as Example 3) was transferred to an electronic component with a size of 40 mm × 40 mm, and covered with an acrylic box during testing to avoid environmental interference. At the same time, the electronic component not covered with the film was recorded as a blank group. When the electronic device was working, the temperature change of its heating surface was monitored.

[0064] The refrigeration effect of the MnSe2 film obtained in this example is shown in Figure 5 As can be seen from the figure, compared with the blank group without film covering, the maximum cooling temperature difference of the radiation heat dissipation film prepared in this embodiment on the electronic components is 13°C.

[0065] Comparative Example 1

[0066] A PVDF film, the preparation method of which comprises the following steps:

[0067] 1) Weigh 0.5 g of polyvinylidene fluoride and 9.5 g of N-methylpyrrolidone respectively, add them into a clean beaker and stir for 10 hours to obtain a uniform high infrared radiation polymer solution;

[0068] 2) Cover the polymer solution on a clean copper plate by drop coating, put it into a drying oven, and dry it at 100° C. for 40 minutes to obtain a PVDF film.

[0069] The spectrum results of the PVDF film obtained in this comparative example in the infrared band are shown in Figure 4 The average infrared emissivity of the radiant heat dissipation film prepared in this comparative example in the 8-13 μm atmospheric window is 0.948, the infrared emissivity in 3-5 μm is 0.493, and the infrared emissivity in 2.5-15 μm is 0.827. Its infrared emissivity in each band is less than that of Example 3.

[0070] The refrigeration effect of the MnSe2 film obtained in this comparative example is shown in Figure 5 As can be seen from the figure, compared with the blank group without film coverage, the maximum cooling temperature difference of the obtained radiation heat dissipation film on the electronic components is 4.6°C.

[0071] Comparative Example 2

[0072] A MnSe2 material and a composite film prepared by a hydrothermal method, wherein the specific preparation method comprises the following steps:

[0073] 1) MnSe2 was prepared by hydrothermal method. 0.6560 g MnCl2·4H2O was weighed, added to 60 ml deionized water, and stirred for 30 min; 0.5211 g Se powder was weighed, added to 2 ml N2H4·H2O, and ultrasonicated for 15 min; the two solutions were mixed and stirred for 1 h, added to a 100 ml reactor, reacted at 180 ° C for 12 h, and then naturally cooled to room temperature;

[0074] 2) Filter the reaction solution to obtain a precipitate, add 10 ml of 1M citric acid to the precipitate and filter it to obtain a precipitate, wash the precipitate repeatedly with anhydrous ethanol and deionized water, and dry the washed precipitate in a drying oven at 60°C for 12 hours to obtain MnSe2 powder;

[0075] 3) Weigh 0.5 g of polyvinylidene fluoride and 9.5 g of N-methylpyrrolidone respectively, add them into a clean beaker and stir for 10 hours to obtain a uniform high infrared radiation polymer solution;

[0076] 4) Weigh 0.4 g of MnSe2 powder prepared by hydrothermal method and 3.6 g of high infrared radiation polymer solution, add them into a clean beaker and stir them magnetically for 10 min to obtain a mixed slurry;

[0077] 5) The mixed slurry was coated on a clean copper plate by drop coating, placed in a drying oven, and dried at 70° C. for 40 min to obtain a thin film.

[0078] The infrared spectrum of the film obtained in this comparative example is shown in Figure 4 The average infrared emissivity of the obtained radiation heat dissipation film in the 8-13 μm atmospheric window is 0.943, the infrared emissivity in 3-5 μm is 0.785, and the infrared emissivity in 2.5-15 μm is 0.890; the infrared emissivity in each band is less than that of Example 3.

[0079] Comparative Example 3

[0080] A magnetic infrared radiation heat dissipation material MnSe2, the preparation method of which comprises the following steps:

[0081] 1) First, MnSe 2.2 According to the chemical stoichiometric formula (Se is volatile during high-temperature synthesis, so an excess amount is required in the raw material), 1.4416 g of high-purity Mn powder and 4.5584 g of high-purity Se powder were weighed respectively, and the two powders were added to an agate mortar, fully ground, and evenly mixed; the ground powder was placed in a clean steel tableting mold with a diameter of 16 mm, and tablets were formed at 40 MPa for 10 minutes to obtain a round tablet with a diameter of 16 mm;

[0082] 2) The obtained round pressed tablet is vacuum sealed in a clean quartz tube (the quartz tube needs to be cleaned with anhydrous ethanol and baked at high temperature first, and argon is repeatedly flushed three times during the sealing process to ensure that the air in the quartz tube is completely excluded), placed in a programmable temperature-controlled muffle furnace, first heated to 550°C at a rate of 5°C / min and annealed for 72 hours, and then cooled with the furnace; then the obtained annealed sample is re-grinded, passed through a 120-mesh sieve, and the above heating steps are repeated, and the temperature is raised to 550°C and annealed for 24 hours, and cooled with the furnace to obtain a sample; the sample is ground and passed through a 120-mesh sieve to obtain a uniform powder product with a particle size of 2-5 μm.

[0083] The XRD test results of the product obtained in this comparative example are shown in Figure 6 The sample obtained in this comparative example has not been quenched, so it is difficult to obtain pure phase MnSe2, and there are more MnSe and Se impurities in the obtained sample. The infrared emissivity of the product obtained in this comparative example in the 3-5μm and 8-14μm bands is shown in Table 1, and the average infrared emissivity is 0.823 and 0.878, respectively, which are lower than Example 1 and Example 2.

[0084] Table 1 is the IR-2 dual-band emissivity measuring instrument data sheet of the products obtained in Example 1, Example 2 and Comparative Example 3

[0085] Band Example 1 Example 2 Comparative Example 3 3-5μm 0.884 0.882 0.823 8-14μm 0.928 0.927 0.878

[0086] The present invention is not limited to the above-mentioned embodiments. For ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention. The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.

Claims

1. A method for preparing a magnetic infrared radiation heat dissipation material MnSe2, characterized in that: The steps include: 1) mixing manganese powder and selenium powder in proportion and evenly pressing the obtained mixed powder into tablets to obtain a primary block; 2) melting and quenching the obtained primary block under vacuum conditions; 3) grinding the obtained quenched casting and then pressing it into tablets to obtain a secondary block; 4) The obtained secondary block is subjected to step-by-step melt annealing under vacuum conditions, and then ground to obtain the magnetic infrared radiation heat dissipation material MnSe2.

2. The preparation method according to claim 1, characterized in that: In step 1), the molar ratio of manganese powder to selenium powder is 1:(2-3).

3. The preparation method according to claim 1, characterized in that: Step 1) The particle size of the Mn powder is 100-400 mesh; the particle size of the Se powder is 100-400 mesh.

4. The preparation method according to claim 1, characterized in that: Step 2) The temperature used in the melting step is 400-600° C. and the insulation time is 8-12 hours.

5. The preparation method according to claim 1, characterized in that: Step 2) The melting step specifically includes: firstly heating from room temperature to 200-220°C at a rate of 2-5°C / min; then heating to 230-240°C at a rate of 1-3°C / min; finally heating to the insulation temperature at a rate of 3-5°C / min, and insulation for 8-12h.

6. The preparation method according to claim 1, characterized in that: Step 4) The stepwise melt annealing step comprises: firstly heating to 450-550°C at a rate of 3-5°C / min, keeping the temperature for 48-80h, and naturally cooling to room temperature; then re-grinding the obtained annealed product, repeating the heating step to raise the temperature to 450-550°C, keeping the temperature for 12-24h, and then naturally cooling to obtain the annealed product.

7. The magnetic infrared radiation heat dissipation material MnSe2 prepared by the preparation method according to any one of claims 1 to 6.

8. A method for preparing a MnSe2 infrared radiation composite film using the magnetic infrared radiation heat dissipation material MnSe2 as claimed in claim 7, characterized in that: The steps include: 1) Mixing the magnetic infrared radiation heat dissipation material MnSe2 and the high infrared radiation polymer solution uniformly to obtain a slurry; 2) The slurry is coated on a substrate and dried to obtain a MnSe2 infrared radiation composite film.

9. The method according to claim 8, characterized in that Step 1) The high infrared radiation polymer solution comprises a polymer matrix with high infrared emissivity and a dispersant.

10. The method according to claim 9, characterized in that The polymer matrix with high infrared emissivity is at least one of polydimethylsiloxane, polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polymethyl methacrylate, and polyimide; the dispersant is at least one of N-methylpyrrolidone and dimethylformamide.

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