Photon-induced autocatalysis solar cell non-contact electrode deposition method and device

Abstract

The invention relates to a photon-induced autocatalysis solar cell non-contact electrode deposition method and device. The method sequentially comprises the following steps that S1, a cell substrate is prepared; s2, preparing a P side electrode; s3, preparing an N-side electrode; and S4, preparing a conducting layer and an anti-oxidation layer. According to the invention, mask preparation and deplating processes are avoided, and the electrode preparation process is simplified.

Description

Technical Field

[0001] The present invention relates to the technical field related to solar cells, and in particular to a photon-induced self-catalytic solar cell non-contact electrode deposition method and device. Background Art

[0002] Energy is the cornerstone of modern society. It supports the operation of the economy, industrial production, traffic flow and all aspects of daily life. With the growth of the global population and the acceleration of industrialization, energy demand continues to rise, while the impact of traditional fuel energy on the environment and climate is becoming more and more significant. Therefore, it is crucial to find sustainable energy solutions. Solar energy is a clean, renewable energy source with wide distribution and abundant resources. It is a key energy source to promote energy transformation and achieve sustainable development in the 21st century.

[0003] In the process of making solar cells, in order to fully collect the carriers generated by the photovoltaic effect, it is usually necessary to prepare metallized grid lines on the front and back of the solar cell to form the positive and negative electrodes in the physical sense and provide the external current path required by the battery. At present, in the industrial process, screen printing silver paste is usually used to prepare the electrodes of solar cells. Although the screen printing process is simple and the process is mature, the price of silver paste is high, which greatly increases the manufacturing cost of the battery. In addition, the width of the front grid line made by screen printing is relatively wide, and burrs will appear on the edges of the grid line, resulting in an increase in the shading area, which affects the photoelectric conversion efficiency.

[0004] In order to solve the problem of reducing the high cost of silver paste, physical vapor deposition, chemical vapor deposition, chemical plating, electroplating and other methods are used to prepare electrode seed layers, bonding layers, conductive layers and antioxidant layers. When preparing the metal bonding layer, chemical nickel plating is usually used to complete nickel plating through sensitization, activation and chemical nickel plating. However, there are problems such as poor bonding strength between the nickel plated layer and the substrate, uneven plating, and poor plating quality.

[0005] In view of the above-mentioned defects, the designers have actively carried out research and innovation in order to create a photon-induced self-catalytic solar cell non-contact electrode deposition method and device to make it more valuable for industrial use. Summary of the invention

[0006] In order to solve any of the above technical problems, the purpose of the present invention is to provide a photon-induced self-catalytic solar cell non-contact electrode deposition method and device.

[0007] To achieve the above object, the present invention adopts the following technical solution:

[0008] One of the purposes of the present invention:

[0009] The photon-induced self-catalytic solar cell non-contact electrode deposition method comprises the following steps in sequence:

[0010] Step S1, preparing a battery substrate: preparing an SHJ substrate, depositing a P-type amorphous silicon layer on the P side of the SHJ substrate, depositing an N-type amorphous silicon layer on the N side of the SHJ substrate, and depositing a transparent conductive film on the outer sides of the P-type amorphous silicon layer and the N-type amorphous silicon layer;

[0011] Step S2, preparing a P-side electrode: preparing a plurality of masks on the transparent conductive film outside the P-type amorphous silicon layer, immersing the P-side of the SHJ substrate in the electroplating solution in the electroplating tank with the built-in electrode and serving as the positive electrode, connecting the N-side of the SHJ substrate to the cathode of the electrode and serving as the negative electrode, and under the action of an external electric field, electrons flow from the N-side of the SHJ substrate to the P-side of the SHJ substrate, and an electrolytic reaction occurs at the interface between the area of ​​the P-side of the SHJ substrate not covered by the mask and the electroplating solution, and finally depositing a P-side metal seed layer in the area of ​​the P-side of the SHJ substrate not covered by the mask, and then washing and drying;

[0012] Step S3, preparing an N-side electrode: immersing the N-side of the SHJ substrate in an autocatalytic plating solution in an autocatalytic plating tank, irradiating the N-side surface of the SHJ substrate with a laser beam from a laser through the autocatalytic solution, and separating the electron-hole pairs generated by the photovoltaic effect of the silicon substrate under the action of a built-in electric field, and the electron holes move toward the P-side of the SHJ substrate, and the electrons move toward the N-side of the SHJ substrate, and gather in the laser-irradiated area, and finally react at the interface between the laser-irradiated area of ​​the N-side of the SHJ substrate and the autocatalytic plating solution to form an N-side metal seed layer, which is then washed and dried;

[0013] Step S4, preparing a conductive layer and an anti-oxidation layer: preparing a conductive layer and an anti-oxidation layer on the P-side metal seed layer and the N-side metal seed layer formed in the above steps S2 and S3 by electroplating, removing the mask, and annealing.

[0014] As a further improvement of the present invention, in step S1, an intrinsic amorphous silicon layer, a P-type amorphous silicon layer and a transparent conductive film are sequentially deposited from the inside to the outside on the P side of the SHJ substrate; and an intrinsic amorphous silicon layer, an N-type amorphous silicon layer and a transparent conductive film are sequentially deposited from the inside to the outside on the N side of the SHJ substrate.

[0015] As a further improvement of the present invention, in step S2, the P-side metal seed layer electroplated is nickel, the electroplating solution formula is nickel sulfate and boric acid, the pH is 4.0-4.5, the electroplating temperature is 50-70°C, and the current density is 2A / dm 2 -6 A / dm 2 , time is 3-8min.

[0016] As a further improvement of the present invention, in step S3, the metal seed layer of the self-catalytic plating is nickel, and the formula of the self-catalytic plating solution is: 20-40 g / L of nickel chloride hexahydrate, 6-12 g / L of sodium bisulfite, 12-16 g / L of sodium citrate, 3-6 g / L of sodium acetate, 0.3-0.7 mL / L of hydrochloric acid and deionized water, the self-catalytic plating temperature is 50-90°C, and the time is 5-15 min.

[0017] As a further improvement of the present invention, in step S3, the laser beam emitted by the laser is a picosecond laser, the laser beam wavelength range is 350nm-850nm, the width range is 5um-20um, and the laser beam energy density is 1W / cm 2 -100 W / cm 2 , the irradiation time is 1ms-100ms.

[0018] As a further improvement of the present invention, in step S4, the conductive layer is a copper layer, the copper electroplating solution is copper sulfate and sulfuric acid, and the current density is 2A / dm 2 -5 A / dm 2 , temperature is 25℃-35℃, time is 2-4min.

[0019] As a further improvement of the present invention, in step S4, the anti-oxidation layer is a tin layer, the electroplating tin solution is stannous sulfate and sulfuric acid, and the current density is 0.3A / cm 2 -0.5A / cm 2 , temperature is 25℃-35℃, time is 3-5min.

[0020] The second purpose of the present invention is:

[0021] Photon-induced self-catalytic solar cell non-contact electrode deposition device, comprising:

[0022] An electroplating tank for immersing the P side of the SHJ substrate, wherein electrodes, a power supply and an electroplating solution are built into the electroplating tank;

[0023] An autocatalytic plating tank for immersing the N side of the SHJ substrate, wherein the autocatalytic plating solution is built in the autocatalytic plating tank;

[0024] A laser is arranged directly below the catalytic plating tank, and the laser beam of the laser is directed toward the solar cell to be plated.

[0025] As a further improvement of the present invention, the autocatalytic plating tank is made of transparent glass, and the laser beam emitted by the laser can penetrate the autocatalytic plating tank and the catalytic plating solution and irradiate the surface area of ​​the solar cell.

[0026] As a further improvement of the present invention, an air agitator composed of a blast pipe and a nozzle is arranged at the inner bottom of the autocatalytic plating tank; conveyor belts for the operation of solar cells are arranged on both the electroplating tank and the autocatalytic plating tank, and a flipping device for flipping the solar cells is arranged between the conveyor belt of the electroplating tank and the conveyor belt of the autocatalytic plating tank.

[0027] By means of the above scheme, the present invention has at least the following advantages:

[0028] The present invention avoids mask preparation and stripping processes and simplifies the electrode preparation process.

[0029] The present invention adopts laser-assisted preparation of a metal seed layer, an electroplated deposited conductive layer and an anti-oxidation layer, and can realize the preparation of a metal electrode without using any mask pattern, thereby reducing the complexity of the process, avoiding the mask removal and corrosion process of the seed layer, and the seed layer has better bonding strength with the substrate, uniform thickness, and good density of the coating.

[0030] The photon-induced self-catalytic nickel plating layer of the present invention has strong bonding force and low contact resistance, and establishes a good conductive bottom layer for the copper plating layer, thereby improving the adhesion of the copper plating electrode.

[0031] The present invention adopts electroplating to prepare the P-side electrode and photon-induced self-catalytic plating to prepare the N-side electrode. It adopts a non-contact method, does not need to find electroplating contacts, does not need an external power supply in the self-catalytic plating, simplifies the device, and has a good electroplating effect.

[0032] The present invention does not require high-temperature processing and avoids the use of silver, thereby reducing costs.

[0033] The grid lines of the present invention can be made thinner than screen-printed silver grid lines, and the light shielding loss of the electrode is relatively small, which effectively improves the carrier collection.

[0034] The interior of the self-catalytic plating electrode of the present invention is dense and uniform, and has better bonding strength with the substrate.

[0035] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention with accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0037] Figure 1It is a schematic flow diagram of the photon-induced self-catalytic solar cell non-contact electrode deposition method of the present invention;

[0038] Figure 2 is a schematic diagram of step S2 of the present invention;

[0039] Figure 3 is a schematic diagram of step S3 of the present invention;

[0040] Figure 4 is a schematic diagram of the conveyor belt and the turning device of the present invention;

[0041] Figure 5 yes Figure 2 Schematic diagram of the structure of a solar cell.

[0042] The meanings of the various reference numerals in the figures are as follows.

[0043] Electroplating tank 1, solar cell 2, electrode 3, autocatalytic plating tank 4, laser 5, blast pipe 6, nozzle 7, conveyor belt 8, turning device 9;

[0044] SHJ substrate 21 , intrinsic amorphous silicon layer 22 , P-type amorphous silicon layer 23 , N-type amorphous silicon layer 24 , transparent conductive film 25 , and mask 26 . DETAILED DESCRIPTION

[0045] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0046] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiment of the present invention. Obviously, the described embodiment is only a part of the embodiment of the present invention, rather than all the embodiments. The components of the embodiment of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiment of the present invention provided in the drawings is not intended to limit the scope of the invention claimed for protection, but merely represents the selected embodiment of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present invention.

[0047] Example

[0048] like Figure 1 to Figure 5 As shown,

[0049] One of the purposes of the present invention:

[0050] The photon-induced self-catalytic solar cell non-contact electrode deposition method comprises the following steps in sequence:

[0051] Step S1, preparing a battery substrate: preparing an SHJ substrate 21, depositing a P-type amorphous silicon layer 23 on the P side of the SHJ substrate 21, depositing an N-type amorphous silicon layer 24 on the N side of the SHJ substrate 21, and depositing a transparent conductive film 25 on the outer sides of the P-type amorphous silicon layer 23 and the N-type amorphous silicon layer 24;

[0052] Step S2, preparing a P-side electrode: preparing a plurality of masks 26 on the transparent conductive film 25 outside the P-type amorphous silicon layer 23, immersing the P-side of the SHJ substrate 21 in the electroplating solution in the electroplating tank 1 of the built-in electrode 3 and serving as the positive electrode, connecting the N-side of the SHJ substrate 21 to the cathode of the electrode 3 and serving as the negative electrode, and under the action of an external electric field, electrons flow from the N-side of the SHJ substrate 21 to the P-side of the SHJ substrate 21, and an electrolytic reaction occurs at the interface between the area of ​​the P-side of the SHJ substrate 21 not covered by the mask 26 and the electroplating solution, and finally depositing a P-side metal seed layer in the area of ​​the P-side of the SHJ substrate 21 not covered by the mask 26, and then washing and drying;

[0053] Step S3, preparing the N-side electrode: immersing the N-side of the SHJ substrate 21 in the autocatalytic plating solution in the autocatalytic plating tank 4, irradiating the laser beam from the laser 5 on the N-side surface of the SHJ substrate 21 through the autocatalytic solution, and the electron-hole pairs generated by the photovoltaic effect of the silicon substrate are separated under the action of the built-in electric field, and the electron holes move to the P-side of the SHJ substrate 21, and the electrons move to the N-side of the SHJ substrate 21, and gather in the laser irradiated area, and finally react at the interface between the laser irradiated area on the N-side of the SHJ substrate 21 and the autocatalytic plating solution to form an N-side metal seed layer, which is then washed and dried;

[0054] Step S4, preparing a conductive layer and an anti-oxidation layer: preparing a conductive layer and an anti-oxidation layer on the P-side metal seed layer and the N-side metal seed layer formed in the above steps S2 and S3 by electroplating, removing the mask 26, and annealing.

[0055] Preferably, in step S1, an intrinsic amorphous silicon layer 22, a P-type amorphous silicon layer 23 and a transparent conductive film 25 are sequentially deposited on the P side of the SHJ substrate 21 from the inside to the outside; and an intrinsic amorphous silicon layer 22, an N-type amorphous silicon layer 24 and a transparent conductive film 25 are sequentially deposited on the N side of the SHJ substrate 21 from the inside to the outside.

[0056] Preferably, in step S2, the P-side metal seed layer electroplated is nickel, the electroplating solution formula is nickel sulfate and boric acid, the pH is 4.0-4.5, the electroplating temperature is 50-70°C, and the current density is 2A / dm 2 -6 A / dm 2 , time is 3-8min.

[0057] Preferably, in step S3, the metal seed layer of the autocatalytic plating is nickel, and the formula of the autocatalytic plating solution is: 20-40 g / L nickel chloride hexahydrate, 6-12 g / L sodium bisulfite, 12-16 g / L sodium citrate, 3-6 g / L sodium acetate, 0.3-0.7 mL / L hydrochloric acid and deionized water, the autocatalytic plating temperature is 50-90°C, and the time is 5-15 min.

[0058] Preferably, in step S3, the laser beam emitted by the laser 5 is a picosecond laser, the laser beam wavelength range is 350nm-850nm, the width range is 5um-20um, and the laser beam energy density is 1W / cm 2 -100W / cm 2 , the irradiation time is 1ms-100ms.

[0059] Preferably, in step S4, the conductive layer is a copper layer, the copper electroplating solution is copper sulfate and sulfuric acid, and the current density is 2A / dm 2 -5 A / dm 2 , temperature is 25℃-35℃, time is 2-4min.

[0060] Preferably, in step S4, the anti-oxidation layer is a tin layer, the electroplating tin solution is stannous sulfate and sulfuric acid, and the current density is 0.3A / cm 2 -0.5A / cm 2 , temperature is 25℃-35℃, time is 3-5min.

[0061] The second purpose of the present invention is:

[0062] Photon-induced self-catalytic solar cell non-contact electrode deposition device, comprising:

[0063] An electroplating tank 1 for immersing the P side of the SHJ substrate 21, wherein the electroplating tank 1 is provided with an electrode 3, a power source and an electroplating solution;

[0064] An autocatalytic plating tank 4 for immersing the N side of the SHJ substrate 21, wherein the autocatalytic plating tank 4 contains an autocatalytic plating solution;

[0065] A laser 5 is arranged directly below the catalytic plating tank 4 , and the laser beam of the laser 5 is directed toward the solar cell 2 to be plated.

[0066] Preferably, the autocatalytic plating tank 4 is made of transparent glass, and the laser beam emitted by the laser 5 can penetrate the autocatalytic plating tank 4 and the catalytic plating solution and irradiate the surface area of ​​the solar cell 2 .

[0067] Preferably, an air agitator consisting of a blower pipe 6 and a nozzle 7 is provided at the inner bottom of the autocatalytic plating tank 4; a conveyor belt 8 for the operation of the solar cell 2 is provided on both the electroplating tank 1 and the autocatalytic plating tank 4, and a flipping device 9 for flipping the solar cell 2 is provided between the conveyor belt of the electroplating tank 1 and the conveyor belt of the autocatalytic plating tank 4.

[0068] The first embodiment of the present invention:

[0069] The photon-induced self-catalytic solar cell non-contact electrode deposition method comprises the following steps in sequence:

[0070] Step S1, preparing a battery substrate: preparing an SHJ substrate 21, depositing a P-type amorphous silicon layer 23 on the P side of the SHJ substrate 21, depositing an N-type amorphous silicon layer 24 on the N side of the SHJ substrate 21, and depositing a transparent conductive film 25 on the outer sides of the P-type amorphous silicon layer 23 and the N-type amorphous silicon layer 24.

[0071] In step S1, an intrinsic amorphous silicon layer 22, a P-type amorphous silicon layer 23 and a transparent conductive film 25 are sequentially deposited on the P side of the SHJ substrate 21 from the inside to the outside; an intrinsic amorphous silicon layer 22, an N-type amorphous silicon layer 24 and a transparent conductive film 25 are sequentially deposited on the N side of the SHJ substrate 21 from the inside to the outside.

[0072] Step S2, preparing the P-side electrode: prepare a plurality of masks 26 on the transparent conductive film 25 outside the P-type amorphous silicon layer 23, immerse the P-side of the SHJ substrate 21 in the electroplating solution in the electroplating tank 1 of the built-in electrode 3 and serve as the positive electrode, connect the N-side of the SHJ substrate 21 to the cathode of the electrode 3 and serve as the negative electrode, and under the action of the external electric field, electrons flow from the N-side of the SHJ substrate 21 to the P-side of the SHJ substrate 21, and an electrolytic reaction occurs at the interface between the area of ​​the P-side of the SHJ substrate 21 not covered by the mask 26 and the electroplating solution, and finally deposit a P-side metal seed layer in the area of ​​the P-side of the SHJ substrate 21 not covered by the mask 26, and then wash and dry.

[0073] In step S2, the P-side metal seed layer electroplated is nickel, the electroplating solution formula is nickel sulfate and boric acid, the pH is 4.0-4.5, the electroplating temperature is 50-70°C, and the current density is 2A / dm 2 -6 A / dm 2 , time is 3-8min.

[0074] Step S3, preparing the N-side electrode: immersing the N-side of the SHJ substrate 21 in the autocatalytic plating solution in the autocatalytic plating tank 4, irradiating the laser beam from the laser 5 on the N-side surface of the SHJ substrate 21 through the autocatalytic solution, and the electron-hole pairs generated by the photovoltaic effect of the silicon substrate are separated under the action of the built-in electric field, and the electron holes move to the P-side of the SHJ substrate 21, and the electrons move to the N-side of the SHJ substrate 21, and gather in the laser irradiated area, and finally react at the interface between the laser irradiated area on the N-side of the SHJ substrate 21 and the autocatalytic plating solution to form an N-side metal seed layer, which is then washed and dried.

[0075] In step S3, the metal seed layer of the self-catalytic plating is nickel, and the formula of the self-catalytic plating solution is: 20-40g / L nickel chloride hexahydrate, 6-12g / L sodium bisulfite, 12-16g / L sodium citrate, 3-6g / L sodium acetate, 0.3-0.7mL / L hydrochloric acid and deionized water, the self-catalytic plating temperature is 50-90°C, and the time is 5-15min.

[0076] In step S3, the laser beam emitted by the laser 5 is a picosecond laser with a wavelength range of 350nm-850nm, a width range of 5um-20um, and a laser beam energy density of 1W / cm 2 -100W / cm 2 , the irradiation time is 1ms-100ms.

[0077] Among them, when preparing the N-side electrode and starting the self-catalytic plating, the reaction rate is very slow. With the trace deposition of the generated N-side metal seed layer, the N-side metal seed layer will play a catalytic role, and then the reaction rate will gradually accelerate. Finally, the reaction rate slows down and reaches saturation, completing the deposition of the N-side metal seed layer.

[0078] Among them, the P-side electrode is prepared by electroplating with an external electric field, and the N-side electrode is prepared by self-catalytic plating with laser irradiation. Both are non-contact and can deposit electrodes without contact.

[0079] In the above steps S2 and S3, the P-side electrode is prepared by electroplating, and the N-side electrode is prepared by photon-induced self-catalytic plating, which has the following advantages:

[0080] 1. Non-contact type: Currently, in the large-scale production of solar cells, the biggest difficulty in electrode deposition is how to form a good contact. When electroplating, you need to find a good fixture contact. Using non-contact electrode deposition technology and equipment, there is no need to find electroplating contacts, no external power supply is required in autocatalytic plating, the device is simplified, and the electroplating effect is good.

[0081] 2. Good bonding with the substrate, simplified graphic process, no need to make a mask: The traditional method of preparing the seed layer (physical vapor deposition, chemical vapor deposition, electroplating, chemical plating, etc.) requires the preparation of a mask, removal of the mask, and removal of the seed layer, and the bonding between the seed layer and the substrate is poor. The present invention uses laser-assisted preparation of a metal seed layer, an electroplated deposited conductive layer, and an anti-oxidation layer. The preparation of a metal electrode can be achieved without using any mask pattern, reducing the complexity of the process, avoiding mask removal and corrosion of the seed layer, and the bonding between the seed layer and the substrate is better, the thickness is uniform, and the density of the coating is good.

[0082] 3. Reduce costs: Compared with screen-printed silver paste, the entire process of self-catalytic plating does not require silver, which greatly reduces the manufacturing cost. The grid lines can be made thinner than screen-printed silver grid lines, and the shading loss of the electrode is relatively small, which effectively improves carrier collection. At the same time, the interior of the self-catalytic plated electrode is dense and uniform, and the bonding force with the substrate is better.

[0083] Step S4, preparing a conductive layer and an anti-oxidation layer: preparing a conductive layer and an anti-oxidation layer on the P-side metal seed layer and the N-side metal seed layer formed in the above steps S2 and S3 by electroplating, removing the mask 26, and annealing.

[0084] In step S4, the conductive layer is a copper layer, the copper electroplating solution is copper sulfate and sulfuric acid, and the current density is 2A / dm 2 -5A / dm 2 , temperature is 25℃-35℃, time is 2-4min.

[0085] In step S4, the anti-oxidation layer is a tin layer, the electroplating tin solution is stannous sulfate and sulfuric acid, and the current density is 0.3A / cm 2 -0.5A / cm 2 , temperature is 25℃-35℃, time is 3-5min.

[0086] The second embodiment of the present invention:

[0087] Photon-induced self-catalytic solar cell non-contact electrode deposition device, comprising:

[0088] An electroplating tank 1 for immersing the P side of the SHJ substrate 21, wherein the electroplating tank 1 is provided with an electrode 3, a power source and an electroplating solution;

[0089] An autocatalytic plating tank 4 for immersing the N side of the SHJ substrate 21, wherein the autocatalytic plating tank 4 contains an autocatalytic plating solution;

[0090] A laser 5 is arranged directly below the catalytic plating tank 4 , and the laser beam of the laser 5 is directed toward the solar cell 2 to be plated.

[0091] In addition, the autocatalytic plating tank 4 is made of transparent glass, and the laser beam emitted by the laser 5 can penetrate the autocatalytic plating tank 4 and the catalytic plating solution and irradiate the surface area of ​​the solar cell 2 .

[0092] In addition, an air agitator consisting of a blower pipe 6 and a nozzle 7 is arranged at the inner bottom of the autocatalytic plating tank 4; a conveyor belt 8 for the operation of the solar cell 2 is arranged on the electroplating tank 1 and the autocatalytic plating tank 4, and a flipping device 9 for flipping the solar cell 2 is arranged between the conveyor belt 8 of the electroplating tank 1 and the conveyor belt 8 of the autocatalytic plating tank 4.

[0093] By using a deposition device adapted to the above-mentioned photon-induced autocatalytic solar cell non-contact electrode deposition method, the solar cell 2 can be easily run on the conveyor belt 8 through the conveyor belt 8, and the solar cell 2 can be easily flipped between the electroplating tank 1 and the autocatalytic plating tank 4 through the flipping device 9, thereby realizing automatic switching of step S2, preparing the P-side electrode, and step S3, preparing the N-side electrode.

[0094] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implying the number of technical features indicated. Thus, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0095] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection, it can be a mechanical connection, it can be an electrical connection, it can be a direct connection, it can be indirectly connected through an intermediate medium, and it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0096] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the technical principles of the present invention, and these improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A photon-induced self-catalytic solar cell non-contact electrode deposition method, characterized in that: The following steps are included in sequence: Step S1, preparing a battery substrate: preparing an SHJ substrate (21), depositing a P-type amorphous silicon layer (23) on the P side of the SHJ substrate (21), depositing an N-type amorphous silicon layer (24) on the N side of the SHJ substrate (21), and depositing a transparent conductive film (25) on the outer sides of the P-type amorphous silicon layer (23) and the N-type amorphous silicon layer (24); Step S2, preparing a P-side electrode: preparing a plurality of masks (26) on the transparent conductive film (25) outside the P-type amorphous silicon layer (23), immersing the P-side of the SHJ substrate (21) in the electroplating solution in the electroplating tank (1) of the built-in electrode (3) and serving as the positive electrode, connecting the N-side of the SHJ substrate (21) to the cathode of the electrode (3) and serving as the negative electrode, and under the action of an external electric field, electrons flow from the N-side of the SHJ substrate (21) to the P-side of the SHJ substrate (21), and an electrolytic reaction occurs at the interface between the region of the P-side of the SHJ substrate (21) not covered by the mask (26) and the electroplating solution, and finally depositing a P-side metal seed layer in the region of the P-side of the SHJ substrate (21) not covered by the mask (26), and then washing and drying; Step S3, preparing an N-side electrode: immersing the N-side of the SHJ substrate (21) in an autocatalytic plating solution in an autocatalytic plating tank (4), irradiating the N-side surface of the SHJ substrate (21) with a laser beam from a laser (5) through the autocatalytic solution, and separating the electron-hole pairs generated by the photovoltaic effect of the silicon substrate under the action of a built-in electric field, and the electron holes move toward the P-side of the SHJ substrate (21), and the electrons move toward the N-side of the SHJ substrate (21), and gather in the laser-irradiated area, and finally react at the interface between the laser-irradiated area of ​​the N-side of the SHJ substrate (21) and the autocatalytic plating solution to form an N-side metal seed layer, which is then washed and dried; Step S4, preparing a conductive layer and an anti-oxidation layer: preparing a conductive layer and an anti-oxidation layer on the P-side metal seed layer and the N-side metal seed layer formed in the above steps S2 and S3 by electroplating, removing the mask (26), and annealing.

2. The photon-induced self-catalytic solar cell non-contact electrode deposition method according to claim 1, characterized in that: In the step S1, an intrinsic amorphous silicon layer (22), a P-type amorphous silicon layer (23) and a transparent conductive film (25) are sequentially deposited on the P side of the SHJ substrate (21) from the inside to the outside; and an intrinsic amorphous silicon layer (22), an N-type amorphous silicon layer (24) and a transparent conductive film (25) are sequentially deposited on the N side of the SHJ substrate (21) from the inside to the outside.

3. The photon-induced self-catalytic solar cell non-contact electrode deposition method according to claim 1, characterized in that: In step S2, the P-side metal seed layer electroplated is nickel, the electroplating solution formula is nickel sulfate and boric acid, the pH is 4.0-4.5, the electroplating temperature is 50-70°C, and the current density is 2A / dm 2 -6A / dm 2 , time is 3-8min.

4. The photon-induced self-catalytic solar cell non-contact electrode deposition method according to claim 1, characterized in that: In step S3, the metal seed layer of the self-catalytic plating is nickel, and the formula of the self-catalytic plating solution is: 20-40 g / L nickel chloride hexahydrate, 6-12 g / L sodium bisulfite, 12-16 g / L sodium citrate, 3-6 g / L sodium acetate, 0.3-0.7 mL / L hydrochloric acid and deionized water, the self-catalytic plating temperature is 50-90°C, and the time is 5-15 min.

5. The photon-induced self-catalytic solar cell non-contact electrode deposition method according to claim 1, characterized in that: In step S3, the laser beam emitted by the laser (5) is a picosecond laser, the laser beam wavelength range is 350nm-850nm, the width range is 5um-20um, and the laser beam energy density is 1W / cm 2 -100 W / cm 2 , the irradiation time is 1ms-100ms.

6. The photon-induced self-catalytic solar cell non-contact electrode deposition method according to claim 1, characterized in that: In step S4, the conductive layer is a copper layer, the copper electroplating solution is copper sulfate and sulfuric acid, and the current density is 2A / dm 2 -5A / dm 2 , temperature is 25℃-35℃, time is 2-4min.

7. The photon-induced self-catalytic solar cell non-contact electrode deposition method according to claim 1, characterized in that: In step S4, the anti-oxidation layer is a tin layer, the electroplating tin solution is stannous sulfate and sulfuric acid, and the current density is 0.3A / cm 2 -0.5A / cm 2 , temperature is 25℃-35℃, time is 3-5min.

8. The photon-induced autocatalytic solar cell non-contact electrode deposition device according to any one of claims 1 to 7, characterized in that: include: An electroplating tank (1) for immersing the P side of the SHJ substrate (21), wherein the electroplating tank (1) is provided with an electrode (3), a power source and an electroplating solution; An autocatalytic plating tank (4) for immersing the N side of the SHJ substrate (21), wherein the autocatalytic plating tank (4) contains an autocatalytic plating solution; A laser (5) is arranged directly below the catalytic plating tank (4), and the laser beam of the laser (5) is directed toward the solar cell (2) to be plated.

9. The photon-induced self-catalytic solar cell non-contact electrode deposition device according to claim 8, characterized in that: The autocatalytic plating tank (4) is made of transparent glass, and the laser beam emitted by the laser (5) can penetrate the autocatalytic plating tank (4) and the catalytic plating solution and irradiate the surface area of ​​the solar cell (2).

10. The photon-induced self-catalytic solar cell non-contact electrode deposition device according to claim 8, characterized in that: An air agitator consisting of a blast pipe (6) and a nozzle (7) is arranged at the inner bottom of the autocatalytic plating tank (4); a conveyor belt (8) for the operation of the solar cell (2) is arranged on both the electroplating tank (1) and the autocatalytic plating tank (4); and a turning device (9) for turning over the solar cell (2) is arranged between the conveyor belt of the electroplating tank (1) and the conveyor belt of the autocatalytic plating tank (4).

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